Drive protection circuit for power semiconductor element and control method thereof

Abstract

The present invention discloses a drive protection circuit for a power semiconductor element and a control method thereof. In the drive protection circuit, one end of an opening module, a closing module, and a safety unit are all connected to the gate of the power semiconductor device, and the other ends of the opening module, the closing module, and the safety unit are all connected to the cathode of the power semiconductor device. When the drive protection circuit fails, the safety unit injects a gate current or provides a forward voltage to the power semiconductor element, causing the power semiconductor element to be in a conducting state, or / and provides a high voltage higher than the reverse breakdown voltage to the power semiconductor element, causing the power semiconductor element to fail and be in a short-circuit state. When the entire series system of power semiconductor elements receives an opening command, the drive protection circuit can ensure that the entire series system is in a conducting state even if the drive protection circuits of several elements fail, thereby improving the series reliability.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic circuits, and in particular to a driving protection circuit for a power semiconductor element and a control method thereof. Background Art

[0002] In the prior art, the gate drive circuits of thyristor-type components (such as thyristors, integrated gate-commutated thyristors (IGCTs), and emitter-turn-off thyristors (ETOs)) inject current into the component gate to trigger device turn-on during turn-on, and provide reverse voltage to the component gate cathode to reliably shut down during turn-off. Furthermore, the gate drive circuits of MOSFETs, IGBTs, and other components in the prior art provide a positive voltage to the component gate to turn the device on during turn-on, and a reverse voltage to the component gate to reliably shut down during turn-off.

[0003] In high-voltage applications, power semiconductor components are often connected in series, with a certain degree of redundancy. For components with a short-circuit failure mode, if one or more series components fail, and the number of failed components does not exceed the redundant number, the faulty components must remain in the on-state or short-circuit state, ensuring that the entire series system can continue to operate normally.

[0004] Typically, the failure rate of the driver protection circuits of power semiconductor components is significantly higher than that of the components themselves. In existing technologies, when the driver protection circuit fails, even if a turn-on signal is received, the driver will provide reverse voltage to the component's gate cathode without injecting gate current or providing forward voltage, thereby ensuring the component remains in the off state.

[0005] In a series system, each power semiconductor component is connected in parallel with an overvoltage protection element, such as a lightning arrester. The overvoltage protection threshold is typically lower than the maximum withstand voltage of the power semiconductor component. When all power semiconductor components receive a turn-on command simultaneously, if the driver protection circuit of one of the power semiconductor components fails, the driver cannot inject current into the gate of the power semiconductor component, causing the power semiconductor component to fail to conduct. The entire line voltage is applied to the overvoltage protection element connected in parallel with the power semiconductor component, which absorbs system energy. When the energy accumulates to a certain level, it may cause a violent process such as explosion, which may cause other parts of the equipment or even the entire series system to malfunction.

[0006] Therefore, the gate drive protection circuit in the prior art seriously reduces the reliability of the power semiconductor element series connection system, especially in the application of high voltage field. Summary of the Invention

[0007] The purpose of the present invention is to overcome the defects in the above-mentioned prior art and provide a driving protection circuit for a power semiconductor element and a control method thereof.

[0008] The driving protection circuit of the power semiconductor element provided by the present invention includes an opening module and a closing module, and is characterized in that it also includes a safety unit.

[0009] in,

[0010] One end of the opening module, the closing module, and the safety unit are all connected to the gate of the power semiconductor device, and the other ends of the opening module, the closing module, and the safety unit are all connected to the cathode of the power semiconductor device.

[0011] When the drive protection circuit fails, the safety unit injects gate current or provides forward voltage to the power semiconductor element, so that the power semiconductor element is in the on state, or / and provides a high voltage higher than the reverse breakdown voltage to the power semiconductor element, so that the power semiconductor element fails and is in a short-circuit state.

[0012] Furthermore, the safety unit includes a standby opening module or a high voltage module,

[0013] The standby opening module is connected between the gate and cathode of the power semiconductor device. When the driving protection circuit fails, the standby opening module injects gate current or provides forward voltage to the power semiconductor element, so that the power semiconductor element is in a conducting state;

[0014] The high-voltage module is connected between the gate and cathode of the power semiconductor device. When the drive protection circuit fails, the high-voltage module provides a high voltage higher than the reverse breakdown voltage to the power semiconductor element, causing the power semiconductor element to fail and be in a short-circuit state.

[0015] Furthermore, the standby opening module includes a first voltage management circuit, a first capacitor, a current limiting resistor and a first diode.

[0016] in,

[0017] The positive electrode and the negative electrode of the first capacitor are both connected to the first voltage management circuit;

[0018] The positive electrode of the first capacitor is connected to the positive electrode of the first diode through the current limiting resistor;

[0019] The cathode of the first diode is connected to the gate of the power semiconductor element;

[0020] The negative electrode of the first capacitor is connected to the cathode of the power semiconductor element,

[0021] Or the standby opening module includes a second voltage management circuit, a second capacitor, a freewheeling diode, a first controllable switch, an inductor, a sampling resistor and a second diode,

[0022] in,

[0023] The positive electrode and the negative electrode of the second capacitor are both connected to the second voltage management circuit, and the negative electrode of the second capacitor is connected to the positive electrode of the freewheeling diode;

[0024] One end of the first controllable switch is connected to the positive electrode of the second capacitor, and the other end of the first controllable switch is connected to the negative electrode of the freewheeling diode and one end of the inductor;

[0025] The other end of the inductor is connected to the anode of the second diode through the sampling resistor;

[0026] The cathode of the second diode is connected to the gate of the power semiconductor element;

[0027] The negative electrode of the second capacitor is connected to the cathode of the power semiconductor element.

[0028] Furthermore, the high-voltage module includes a third voltage management circuit, a high-voltage capacitor, a second controllable switch and a third diode.

[0029] in,

[0030] The positive electrode and the negative electrode of the high-voltage capacitor are both connected to the third voltage management circuit, and the negative electrode of the high-voltage capacitor is connected to one end of the second controllable switch;

[0031] The other end of the second controllable switch is connected to the cathode of the third diode;

[0032] The anode of the third diode is connected to the gate of the power semiconductor element;

[0033] The positive electrode of the high-voltage capacitor is connected to the cathode of the power semiconductor element.

[0034] Furthermore, the safety unit is connected to an external power source.

[0035] Furthermore, it also includes a control unit, a first power management module, and a second power management module;

[0036] The control unit is connected to the first power management module, the standby opening module or the high voltage module, the opening module and the second power management module;

[0037] The second power management module is connected to the opening module and the closing module;

[0038] The power semiconductor element receives a turn-on instruction when the driving protection circuit fails. When the control unit detects that the turn-on module or the second power management module fails, it controls the standby turn-on module to operate, injects gate current into the power semiconductor element to turn it on, or applies a forward voltage to the gate of the power semiconductor element to turn it on.

[0039] or

[0040] The power semiconductor element receives an opening instruction when the driving protection circuit fails. When the control unit detects that the opening module or the second power management module fails, it controls the high-voltage module to operate and provide reverse high voltage to the gate of the power semiconductor element, thereby breaking down the gate and causing it to fail.

[0041] Furthermore, the power semiconductor element is an integrated gate-commutated thyristor, an emitter-turn-off thyristor, a MOSFET or an IGBT.

[0042] The present invention also provides a method for controlling a driving protection circuit of a power semiconductor element, the method comprising:

[0043] When the driving protection circuit fails, the safety unit injects gate current or provides forward voltage to the power semiconductor element, so that the power semiconductor element is in the on state, or / and provides a high voltage higher than the reverse breakdown voltage to the power semiconductor element, so that the power semiconductor element fails and is in a short-circuit state.

[0044] Furthermore, the standby opening module in the safety unit injects gate current or provides forward voltage to the power semiconductor element when the driving protection circuit fails, so that the power semiconductor element is in a conducting state.

[0045] or

[0046] When the driving protection circuit fails, the high-voltage module in the safety unit provides a high voltage higher than a reverse breakdown voltage to the power semiconductor element, causing the power semiconductor element to fail and be in a short-circuit state.

[0047] Furthermore, the control unit provides a signal to the standby activation module to control the standby activation module to start working, the first voltage management circuit charges the first capacitor, and then the first capacitor injects a gate current or provides a forward voltage to the power semiconductor element through the current limiting resistor and the first diode, so that the power semiconductor element works in the on state.

[0048] or

[0049] The control unit provides a signal to the standby activation module to control the standby activation module to start working, the second voltage management circuit charges the second capacitor, and then the second capacitor injects a gate current or provides a forward voltage to the power semiconductor element through the first controllable switch, the inductor, the sampling resistor, the freewheeling diode and the second diode, so that the power semiconductor element works in the on state.

[0050] or

[0051] The control unit provides a signal to the high-voltage module to control the high-voltage module to start working, the third voltage management circuit charges the high-voltage capacitor, and then the high-voltage capacitor applies a reverse high voltage to the gate of the power semiconductor element by controlling the second controllable switch.

[0052] Furthermore, by changing the parameters of the first voltage management circuit, the charging voltage of the first capacitor is adjusted to control the amplitude of the injected gate current or the provided forward voltage,

[0053] or

[0054] By changing the parameters of the second voltage management circuit, the charging voltage of the second capacitor is adjusted to control the amplitude of the injected gate current or the provided forward voltage,

[0055] or

[0056] By changing the parameters of the third voltage management circuit, the charging voltage of the high-voltage capacitor is adjusted and the amplitude of the reverse high voltage is controlled.

[0057] Furthermore, the first controllable switch is controlled by the control unit to adjust the amplitude and ripple of the injected gate current or the provided forward voltage,

[0058] or

[0059] The second controllable switch is controlled by the control unit to adjust the amplitude and ripple of the reverse high voltage.

[0060] The driving protection circuit of the power semiconductor element of the present invention and the control method thereof are such that when the driving protection circuit fails, if an opening signal is received, the standby opening module in the driving protection circuit injects a gate current into the element or provides a forward voltage, thereby putting the element in a conducting state; or the high-voltage module in the driving protection circuit provides a high voltage higher than the reverse breakdown voltage to the element, thereby causing the element to fail and be in a short-circuit state. The driving protection circuit has high reliability. When the power semiconductor element series system as a whole receives an opening command, even if the driving protection circuits of several elements fail, the series system as a whole can be ensured to be in a conducting state, thereby improving the series reliability. The standby opening module and the high-voltage module circuit principle are simple, easy to implement, low cost, and small in size. Other features and advantages of the present invention will be explained in the subsequent description, and part of them will become apparent from the description, or can be understood by implementing the present invention. The objects and other advantages of the present invention can be achieved and obtained through the structures indicated in the description, claims, and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0062] Figure 1 The IGCT driving protection circuit with a standby opening module according to an embodiment of the present invention is shown;

[0063] Figure 2 The topology structure of the first standby activation module according to an embodiment of the present invention is shown;

[0064] Figure 3 The topology structure of the second standby activation module according to the embodiment of the present invention is shown;

[0065] Figure 4 The IGCT driving protection circuit with a high-voltage module according to an embodiment of the present invention is shown;

[0066] Figure 5 The topology of a high-voltage module according to an embodiment of the present invention is shown;

[0067] Figure 6 The ETO drive protection circuit with a standby opening module according to an embodiment of the present invention is shown;

[0068] Figure 7 An ETO driving protection circuit with a high-voltage module according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0069] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0070] The present invention discloses a driving protection circuit for a power semiconductor element and a control method thereof. The driving protection circuit includes a safety unit, which includes a standby opening module and / or a high-voltage module. The power semiconductor element may be an IGCT, an ETO, a MOSFET or an IGBT.

[0071] Figure 1 FIG. 1 shows an IGCT driving protection circuit with a standby opening module according to an embodiment of the present invention.

[0072] Depend on Figure 1 It can be seen that the driving protection circuit of the power semiconductor element IGCT includes the standby opening module, an opening module, a closing module 1, a control unit, a power management module 1 and a power management module 2.

[0073] in,

[0074] One end of the standby opening module, opening module, and shutdown module 1 are all connected to the gate of the IGCT, and the other ends of the standby opening module, opening module, and shutdown module 1 are all connected to the cathode of the IGCT; the control unit is connected to the standby opening module, opening module, shutdown module 1, and power management module 1, and the control unit is powered separately by an external power supply through the power management module 1; the opening module and shutdown module 1 are connected to the power management module 2, and are powered by an external power supply through the power management module 2.

[0075] When the drive protection circuit fails, if a shutdown command is received, since the number of series connections in the series system is redundant, the line voltage is tolerated by the normally operating power semiconductor element IGCT, and the backup opening module does not work; if an opening command is received, when the control unit detects that the opening module or the power management module 2 fails, it controls the backup opening module to work, injects gate current into the IGCT to turn it on, thereby ensuring that the entire series system is in the on state.

[0076] The drive protection circuit uses the power management module 1 to independently power the control unit and uses an external power supply to directly power the standby activation module, thereby ensuring the working reliability of the control unit and the standby activation module in the event of a drive failure.

[0077] Figure 2 FIG. 1 shows the topology structure of the first standby activation module according to an embodiment of the present invention. Figure 2 As shown, the standby opening module includes a voltage management circuit, a capacitor, a current limiting resistor and a diode.

[0078] in,

[0079] The positive and negative electrodes of the capacitor are both connected to the voltage management circuit; the positive electrode of the capacitor is connected to the positive electrode of the diode through the current limiting resistor; the negative electrode of the diode is connected to the gate of the power semiconductor element such as IGCT; and the negative electrode of the capacitor is connected to the cathode of the power semiconductor element such as IGCT.

[0080] The voltage management circuit is provided with an enable control terminal. When the drive protection circuit fails, the control unit provides a signal to the enable control terminal, controlling the standby activation module to start operation. An external power source charges the capacitor through the voltage management circuit, which has or does not have an isolated power supply. The capacitor then injects gate current into a power semiconductor element, such as an IGCT, through the current-limiting resistor and diode, causing it to operate in a conducting state. By changing the parameters of the voltage management circuit, the capacitor charging voltage can be adjusted, thereby controlling the injected gate current or the amplitude of the provided forward voltage.

[0081] Figure 3 FIG. 1 shows the topology structure of the second standby activation module according to an embodiment of the present invention. Figure 3 As shown, the standby opening module includes a voltage management circuit A, a capacitor C, a freewheeling diode, a controllable switch, an inductor, a sampling resistor and a diode D.

[0082] in,

[0083] The positive and negative electrodes of the capacitor C are both connected to the voltage management circuit A, and the negative electrode of the capacitor C is connected to the positive electrode of the freewheeling diode; one end of the controllable switch is connected to the positive electrode of the capacitor C, and the other end of the controllable switch is connected to the negative electrode of the freewheeling diode and one end of the inductor; the other end of the inductor is connected to the positive electrode of the diode D through the sampling resistor; the negative electrode of the diode D is connected to the gate of the power semiconductor element, such as an IGCT; and the negative electrode of the capacitor C is connected to the cathode of the power semiconductor element, such as an IGCT.

[0084] Figure 3 It will Figure 2 The current limiting resistor in the controllable switch is replaced by the controllable switch, inductor, sampling resistor and freewheeling diode. When the drive protection circuit fails, the control unit provides a signal to the second backup activation module to control the backup activation module to start working, and the voltage management circuit A charges the capacitor C, and then the capacitor C injects the gate current into the power semiconductor element through the controllable switch, inductor, sampling resistor, freewheeling diode and diode D. By changing the parameters of the voltage management circuit A, the charging voltage of the capacitor C is adjusted to control the injected gate current or the amplitude of the provided forward voltage. The controllable switch can also be controlled by the control unit to adjust the amplitude, ripple, etc. of the injected gate current or the provided forward voltage.

[0085] Figure 4 An IGCT driving protection circuit with a high-voltage module according to another embodiment of the present invention is shown. Figure 4 Relative to Figure 1 ,yes Figure 4 Replaced by high voltage module Figure 1 The standby activation module in .

[0086] When the driving protection circuit fails, if a shutdown command is received, since the number of series connections in the series system is redundant, the line voltage is tolerated by normally operating power semiconductor components such as IGCT, and the high-voltage module does not work; if an opening command is received, when the control unit detects that the opening module or the power management module 2 fails, it controls the high-voltage module to work, and provides reverse high voltage to the power semiconductor component such as the IGCT gate, breaking down the gate and causing it to fail. Since the power semiconductor component such as IGCT has a failure short-circuit mode, it ensures that the entire series system is in the on state.

[0087] Figure 5 FIG shows the topological structure of the high voltage module in the embodiment of the present invention. Figure 5 As shown, the high voltage module includes a voltage management circuit B, a high voltage capacitor, a controllable switch S and a diode D1.

[0088] in,

[0089] The positive and negative electrodes of the high-voltage capacitor are both connected to the voltage management circuit B, and the negative electrode of the high-voltage capacitor is connected to one end of the controllable switch S; the other end of the controllable switch S is connected to the negative electrode of the diode D1; the positive electrode of the diode D1 is connected to the gate of the power semiconductor element, such as an IGCT; and the positive electrode of the high-voltage capacitor is connected to the cathode of the power semiconductor element, such as an IGCT.

[0090] The voltage management circuit B is provided with an enable control terminal. When the drive protection circuit fails, the voltage management circuit B receives a signal provided by the control unit to the enable control terminal of the voltage management circuit B, controls the high-voltage module to start operation, and an external power supply charges the high-voltage capacitor through the voltage management circuit B with or without isolation. The high-voltage capacitor then provides a reverse high voltage to a power semiconductor element, such as an IGCT, through the controllable switch S and diode D1, breaking down the gate. By changing the parameters of the voltage management circuit B, the charging voltage of the high-voltage capacitor can be adjusted, thereby controlling the amplitude of the voltage. The amplitude and ripple of the reverse high voltage can also be adjusted by controlling the controllable switch S through the control unit.

[0091] Figure 6 An ETO drive protection circuit with a standby opening module according to an embodiment of the present invention is provided. Figure 7 An ETO drive protection circuit with a high-voltage module according to an embodiment of the present invention is provided. Figure 6 and Figure 7 The working principles are the same as those described above. Figure 1 and Figure 4 The same, the only difference is Figure 6 and Figure 7 The semiconductor power element in the circuit is ETO.

[0092] Similarly, for power semiconductor elements with voltage-controlled opening and closing with a failure short-circuit mode, such as MOSFET, IGBT, etc., a safety unit including a backup opening module or a high-voltage module can also be used in its drive protection circuit. At this time, when the drive protection circuit of the power semiconductor element such as MOSFET, IGBT, etc. fails, the control unit provides a signal to the enable control terminal of the backup opening module to control the backup opening module to start working and apply a forward voltage to the gate of the power semiconductor element such as MOSFET, IGBT, etc. to turn it on; or the control unit provides a signal to the enable control terminal of the high-voltage module to control the high-voltage module to start working and apply a high voltage to the gate of the power semiconductor element such as MOSFET, IGBT, etc. to cause it to break down and fail, thereby ensuring that the entire series system is in the on state.

[0093] The control method of the driving protection circuit of the power semiconductor element of the present invention includes:

[0094] When the drive protection circuit fails, the standby opening module injects gate current into the power semiconductor element, so that the power semiconductor element is in the on state, or applies a forward voltage to the gate of the power semiconductor element to turn it on; or when the drive protection circuit fails, the high-voltage module provides a high voltage higher than the reverse breakdown voltage to the power semiconductor element, so that the power semiconductor element fails and is in a short-circuit state.

[0095] in,

[0096] refer to Figure 2 When the driver protection circuit fails, the control unit provides a signal to the enable control terminal, controlling the backup activation module to start operation. An external power supply charges the capacitor through the voltage management circuit with or without isolation. The capacitor then injects gate current into a power semiconductor element, such as an IGCT, through the current-limiting resistor and diode, causing it to operate in the on state. By changing the parameters of the voltage management circuit, the capacitor charging voltage can be adjusted, thereby controlling the injected gate current or the amplitude of the provided forward voltage.

[0097] refer to Figure 3 When the drive protection circuit fails, the control unit provides a signal to the enable control terminal of the voltage management circuit A. The external power supply charges the capacitor C through the voltage management circuit A with or without isolation. The capacitor C then injects the gate current into the power semiconductor element through the controllable switch, inductor, sampling resistor, freewheeling diode, and diode D. By changing the parameters of the voltage management circuit A, the charging voltage of the capacitor C is adjusted to control the injected gate current or the amplitude of the provided forward voltage. The controllable switch can also be controlled by the control unit to adjust the amplitude, ripple, etc. of the injected gate current or the provided forward voltage.

[0098] refer to Figure 5 When the drive protection circuit fails, the voltage management circuit B receives a signal from the control unit to the enable control terminal of the voltage management circuit B, controls the high-voltage module to start operating, and an external power supply charges the high-voltage capacitor through the voltage management circuit B with or without isolation. The high-voltage capacitor then provides a reverse high voltage to a power semiconductor element, such as an IGCT, through the controllable switch S and diode D1, breaking down the gate. By changing the parameters of the voltage management circuit B, the charging voltage of the high-voltage capacitor can be adjusted, thereby controlling the amplitude of the voltage. The amplitude and ripple of the reverse high voltage can also be adjusted by controlling the controllable switch S through the control unit.

[0099] The drive protection circuit and control method for power semiconductor elements of the present invention ensure that when a fault occurs in the drive protection circuit, upon receiving a turn-on signal, a backup turn-on module in the drive protection circuit injects a gate current or provides a forward voltage to the element, thereby placing the element in a conducting state; or a high-voltage module in the drive protection circuit provides a high voltage higher than the reverse breakdown voltage to the element, thereby causing the element to fail and short-circuit. When the entire series power semiconductor element system receives a turn-on command, the drive protection circuit ensures that the entire system remains in a conducting state, even if the drive protection circuits of several elements fail, thereby improving the reliability of the series connection. The backup turn-on module and high-voltage module circuits have simple principles, are easy to implement, are low-cost, and are compact.

[0100] The first, second, ... of the present invention are only used to distinguish different devices, not to mark the connection order of the devices.

[0101] Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A driving protection circuit for a power semiconductor element, comprising an opening module and a closing module, characterized in that: Also includes a safety unit, in, One end of the opening module, the closing module, and the safety unit are all connected to the gate of the power semiconductor element, and the other ends of the opening module, the closing module, and the safety unit are all connected to the cathode of the power semiconductor element. When the driving protection circuit fails, the safety unit injects a gate current or provides a forward voltage to the power semiconductor element, so that the power semiconductor element is in a conducting state, or provides a high voltage higher than the reverse breakdown voltage to the power semiconductor element, so that the power semiconductor element fails and is in a short-circuit state; The safety unit includes a backup opening module, and the backup opening module includes a first voltage management circuit, a first capacitor, a current limiting resistor and a first diode. in, The positive electrode and the negative electrode of the first capacitor are both connected to the first voltage management circuit; The positive electrode of the first capacitor is connected to the positive electrode of the first diode through the current limiting resistor; The cathode of the first diode is connected to the gate of the power semiconductor element; The negative electrode of the first capacitor is connected to the cathode of the power semiconductor element; or, The standby opening module includes a second voltage management circuit, a second capacitor, a freewheeling diode, a first controllable switch, an inductor, a sampling resistor and a second diode. in, The positive electrode and the negative electrode of the second capacitor are both connected to the second voltage management circuit, and the negative electrode of the second capacitor is connected to the positive electrode of the freewheeling diode; One end of the first controllable switch is connected to the positive electrode of the second capacitor, and the other end of the first controllable switch is connected to the negative electrode of the freewheeling diode and one end of the inductor; The other end of the inductor is connected to the anode of the second diode through the sampling resistor; The cathode of the second diode is connected to the gate of the power semiconductor element; The negative electrode of the second capacitor is connected to the cathode of the power semiconductor element; The driving protection circuit further includes a control unit, a first power management module, and a second power management module.

2. A driving protection circuit for a power semiconductor element, comprising an opening module and a closing module, characterized in that: Also includes a safety unit, in, One end of the opening module, the closing module, and the safety unit are all connected to the gate of the power semiconductor element, and the other ends of the opening module, the closing module, and the safety unit are all connected to the cathode of the power semiconductor element. When the driving protection circuit fails, the safety unit injects a gate current or provides a forward voltage to the power semiconductor element, so that the power semiconductor element is in a conducting state, or provides a high voltage higher than the reverse breakdown voltage to the power semiconductor element, so that the power semiconductor element fails and is in a short-circuit state; The safety unit includes a high-voltage module, and the high-voltage module includes a third voltage management circuit, a high-voltage capacitor, a second controllable switch and a third diode. in, The positive electrode and the negative electrode of the high-voltage capacitor are both connected to the third voltage management circuit, and the negative electrode of the high-voltage capacitor is connected to one end of the second controllable switch; The other end of the second controllable switch is connected to the cathode of the third diode; The anode of the third diode is connected to the gate of the power semiconductor element; The positive electrode of the high-voltage capacitor is connected to the cathode of the power semiconductor element.

3. The driving protection circuit of the power semiconductor element according to claim 1, characterized in that: The standby opening module is connected between the gate and cathode of the power semiconductor element. When the driving protection circuit fails, the standby opening module injects gate current or provides forward voltage to the power semiconductor element, so that the power semiconductor element is in the on state.

4. The driving protection circuit of the power semiconductor element according to claim 2, characterized in that: The high-voltage module is connected between the gate and cathode of the power semiconductor element. When the drive protection circuit fails, the high-voltage module provides a high voltage higher than the reverse breakdown voltage to the power semiconductor element, causing the power semiconductor element to fail and be in a short-circuit state.

5. The driving protection circuit for a power semiconductor element according to any one of claims 1 to 4, characterized in that: The safety unit is connected to an external power source.

6. The driving protection circuit for a power semiconductor element according to claim 1 or 3, characterized in that: The control unit is connected to the first power management module, the standby activation module, the activation module and the second power management module; The second power management module is connected to the opening module and the closing module; The power semiconductor element receives a turn-on instruction when the driving protection circuit fails. When the control unit detects that the turn-on module or the second power management module fails, it controls the standby turn-on module to operate, injects gate current into the power semiconductor element to turn it on, or applies a forward voltage to the gate of the power semiconductor element to turn it on.

7. The driving protection circuit for a power semiconductor element according to claim 2 or 4, characterized in that: It also includes a control unit, a first power management module, and a second power management module; The control unit is connected to the first power management module, the high voltage module, the opening module and the second power management module; The second power management module is connected to the opening module and the closing module; The power semiconductor element receives an opening instruction when the driving protection circuit fails. When the control unit detects that the opening module or the second power management module fails, it controls the high-voltage module to operate and provide reverse high voltage to the gate of the power semiconductor element, thereby breaking down the gate and causing it to fail.

8. The driving protection circuit for a power semiconductor element according to any one of claims 1 to 4, characterized in that: The power semiconductor element is an integrated gate-commutated thyristor, an emitter-turn-off thyristor, a MOSFET or an IGBT.

9. A control method for a driving protection circuit of a power semiconductor element according to any one of claims 1 to 8, characterized in that: When the driving protection circuit fails, the safety unit injects gate current or provides forward voltage to the power semiconductor element, so that the power semiconductor element is in the on state, or provides a high voltage higher than the reverse breakdown voltage to the power semiconductor element, so that the power semiconductor element fails and is in a short-circuit state.

10. The control method of the driving protection circuit of the power semiconductor element according to claim 9, characterized in that: The safety unit includes a standby opening module or a high voltage module; The standby opening module in the safety unit injects gate current or provides forward voltage to the power semiconductor element when the driving protection circuit fails, so that the power semiconductor element is in a conducting state. or When the driving protection circuit fails, the high-voltage module in the safety unit provides a high voltage higher than a reverse breakdown voltage to the power semiconductor element, causing the power semiconductor element to fail and be in a short-circuit state.

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