Device and method for realizing simultaneous detection of top and bottom surfaces of semiconductor crystal grains based on image transfer lens

Abstract

The present invention relates to a device and method for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on a rotating image lens, wherein the detection device comprises a transparent stage for carrying semiconductor crystal grains to be detected, a right-angle rotating image prism arranged on a first side of the transparent stage, and a light source, a telecentric imaging lens and a camera arranged on a second side of the transparent stage; the inclined surface of the right-angle rotating image prism faces the transparent stage and is parallel to the transparent stage; a first rotating image lens and a second rotating image lens are respectively arranged on the incident and exit apertures of the imaging light beam of the inclined surface of the right-angle rotating image prism; the right-angle rotating image prism and the first and second rotating image lenses constitute a combined rotating image optical system, and the combined rotating image optical system can also include two second right-angle rotating image prisms and an rotating image lens located therebetween; the present invention can realize basic equal optical path imaging of the top and bottom surfaces of semiconductor crystal grains, reduce the requirements of the detection system for a large depth of field of the imaging lens, and reduce the cost of the imaging lens.

Description

Technical field:

[0002] The invention belongs to the field of optical detection and machine vision, and in particular relates to a device and method for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on a transfer lens. Background technology:

[0004] Traditional machine vision optical inspection devices mainly include cameras, imaging lenses, lighting sources, image processing algorithm software, electrical control, mechanical structures, objects to be tested (such as semiconductor grains), etc. The light source illuminates the object, and the object obtains the image of the object on the CCD detector surface through the optical imaging lens. The image is transmitted to the computer through the image acquisition card and the AD conversion module. Finally, the required image information is obtained through digital image processing technology. According to the pixel distribution, brightness, color and other information, the size, shape, and color are judged and measured, and the equipment operation on site is controlled. If you want to detect two sides of a single object at the same time, the current common detection method is that one camera occupies one station to detect one side. If you need to detect two or more sides at the same time, you need to use multiple cameras to occupy multiple stations for detection, which will result in a large installation space for the mechanism. At the same time, you need multiple sets of mechanism installation modules and multiple sets of circuit modules, which increases the installation complexity and reduces the system reliability.

[0005] Traditional machine vision optical inspection devices based on single-lens single-sided inspection technology have economic and technical limitations such as inspection efficiency, cost-effectiveness, and complex structure. The applicant has previously proposed an optical device and method for simultaneously inspecting both the top and bottom surfaces of semiconductor grains, which can improve the efficiency, cost-effectiveness, structural complexity, and reliability of surface defect detection.

[0006] like Figure 1 As shown, this is the previous patent application of the applicant (patent application number 201910157471.6), which proposes a device and method for optically inspecting both the top and bottom surfaces of an object (semiconductor grain) at the same time, including a horizontally placed transparent glass stage A5 and a semiconductor grain A4 to be tested located thereon, a right-angle image rotation prism A6 arranged below the transparent glass stage, and a camera A1, a telecentric imaging lens A2, and a ring-shaped illumination light source A3 arranged above the transparent glass stage; the inclined surface of the right-angle image rotation prism faces the transparent glass stage and is parallel to the transparent glass stage; the right-angle image rotation prism, the telecentric imaging lens, and the camera are coaxial. This method mainly uses the secondary reflection of the right-angle image rotation prism to realize the simultaneous inspection of the top and bottom surfaces of the same grain to be tested.

[0007] Since the two optical paths of the double-sided detection optical system use different numbers of optical elements, the object-side optical paths of the two-sided detection imaging optical paths are not equal. Usually, a specially designed large-field telecentric imaging lens is required to obtain clear images of both the top and bottom surfaces of the grain to be tested.

[0008] The limitation of the above-mentioned prior art is that one lens can detect two relative surfaces (top surface and bottom surface) of semiconductor crystal grains simultaneously. However, in the implementation of the simultaneous detection of both sides of semiconductor crystal grains, the following two new problems are usually encountered: (1) The problem of unequal optical path lengths for double-sided detection: Since the two optical paths of the double-sided detection system use different numbers of optical elements, the object-side optical paths of the two-sided detection optical paths are not equal, which leads to the problem of increased depth of field requirements for the imaging lens; (2) The problem of unequal illumination for double-sided detection: Since the two optical paths pass through different numbers of optical elements and have different numbers of reflections and refractions, the illumination of the two light beams of equal intensity when they reach the surface of the crystal grain to be tested will be different, which makes image processing difficult for the simultaneous detection of double-sided defects. Summary of the invention:

[0010] In response to the above problems, the present invention proposes a device and method for simultaneously detecting the top and bottom surfaces of semiconductor grains based on a rotating lens. The device and method for simultaneously detecting the top and bottom surfaces of semiconductor grains based on a rotating lens can reduce the detection system's requirements for a large depth of field of the imaging lens.

[0011] The present invention is a device for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on a rotating image lens, and is characterized in that: it comprises a transparent stage for carrying semiconductor crystal grains to be inspected, a first right-angle rotating image prism arranged on a first side of the transparent stage, and a light source, a telecentric imaging lens and a camera arranged on a second side of the transparent stage; the inclined surface of the first right-angle rotating image prism faces the transparent stage and is parallel to the transparent stage; and a first rotating image lens and a second rotating image lens are respectively arranged on the imaging light beam incident and exit apertures of the inclined surface of the first right-angle rotating image prism.

[0012] Furthermore, the bottom surface imaging of the semiconductor crystal grain is located beside the transparent glass stage and at a horizontal position close to the bottom surface of the semiconductor crystal grain.

[0013] Furthermore, in the combined image-relay optical system composed of the right-angle image-relay prism and the image-relay lens, when the bottom surface of the semiconductor crystal grain is located at a position twice the focal point of the object side of the combined image-relay optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at a position twice the focal point of the image side and the lateral magnification is 1; the secondary images of the top and bottom surfaces of the semiconductor crystal grain pass through the telecentric imaging lens respectively and finally form real images of the top and bottom surfaces in the left and right half areas of the camera sensor.

[0014] Furthermore, the above-mentioned light source is a ring light source; the ring light source is composed of a left half ring and a right half ring, the left half ring and the right half ring correspond to the left half area and the right half area of ​​the camera sensor respectively, and the illumination of the left half ring and the right half ring are controlled separately.

[0015] Furthermore, the above-mentioned image transfer lens is replaced by a double cemented lens.

[0016] Furthermore, the transparent stage is a transparent glass plate.

[0017] The present invention provides a method for realizing simultaneous detection of the top and bottom surfaces of semiconductor grains based on a transfer lens, which is characterized by comprising the following steps:

[0018] Step A1: placing a transparent stage and a light source between the transparent stage and the telecentric imaging lens in a direction perpendicular to the optical axis of a shooting device composed of a camera and a coaxial telecentric imaging lens;

[0019] Step A2: disposing a first right-angle image rotation prism perpendicular to the optical axis direction on a first side of the transparent stage; the inclined surface of the first right-angle image rotation prism faces the transparent stage and is parallel to the transparent stage;

[0020] Step A3: a first image transfer lens and a second image transfer lens are respectively arranged on the imaging light beam incident and exit apertures of the inclined surface of the first right-angle image transfer prism, and the bottom surface of the semiconductor crystal grain to be measured placed on the transparent stage is imaged at a horizontal position beside the transparent glass stage and close to the bottom surface of the semiconductor crystal grain. At the same time, when the bottom surface of the semiconductor crystal grain is located at a position twice the focal point of the object side of the combined image transfer optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at a position twice the focal point of the image side, and the lateral magnification is 1 times; the secondary images of the top and bottom surfaces of the semiconductor crystal grain are respectively passed through the telecentric imaging lens to finally form real images of the top and bottom surfaces in the left and right half areas of the camera sensor;

[0021] Step A4: Place the semiconductor die to be tested on a transparent stage.

[0022] The present invention is a device for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on a rotating image lens, and is characterized in that it comprises a transparent stage for carrying semiconductor crystal grains to be inspected, a second right-angle rotating image prism with two right-angle surfaces arranged opposite to each other on a first side of the transparent stage, and a light source, a telecentric imaging lens and a camera arranged on the second side of the transparent stage; the other right-angle surfaces of the two second right-angle rotating image prisms face the transparent stage and are parallel to the transparent stage; and a rotating image lens is arranged between the right-angle surfaces opposite to each other of the two second right-angle rotating image prisms.

[0023] Furthermore, the bottom surface imaging of the semiconductor crystal grain is located beside the transparent glass stage and at a horizontal position close to the bottom surface of the semiconductor crystal grain.

[0024] Furthermore, in the combined image-relay optical system composed of the right-angle image-relay prism and the image-relay lens, when the bottom surface of the semiconductor crystal grain is located at a position twice the focal point of the object side of the combined image-relay optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at a position twice the focal point of the image side and the lateral magnification is 1; the secondary images of the top and bottom surfaces of the semiconductor crystal grain pass through the telecentric imaging lens respectively and finally form real images of the top and bottom surfaces in the left and right half areas of the camera sensor.

[0025] Furthermore, the above-mentioned light source is a ring light source; the ring light source is composed of a left half ring and a right half ring, the left half ring and the right half ring correspond to the left half area and the right half area of ​​the camera sensor respectively, and the illumination of the left half ring and the right half ring are controlled separately.

[0026] Furthermore, the above-mentioned image transfer lens is replaced by a double cemented lens.

[0027] Furthermore, the transparent stage is a transparent glass plate.

[0028] The present invention provides a method for realizing simultaneous detection of the top and bottom surfaces of semiconductor grains based on a transfer lens, which is characterized by comprising the following steps:

[0029] Step A1: placing a transparent stage and a light source between the transparent stage and the telecentric imaging lens in a direction perpendicular to the optical axis of a shooting device composed of a camera and a coaxial telecentric imaging lens;

[0030] Step A2: disposing two second right-angle image-reversing prisms disposed opposite to each other on a first side of the transparent stage; the other right-angle surfaces of the two second right-angle image-reversing prisms face the transparent stage and are parallel to the transparent stage;

[0031] Step A3: an image transfer lens is provided between the two opposite right-angle surfaces of the second right-angle image transfer prisms, and the bottom surface of the semiconductor crystal grain to be measured placed on the transparent stage is imaged at a horizontal position beside the transparent glass stage and close to the bottom surface of the semiconductor crystal grain. At the same time, the right-angle image transfer prism and the image transfer lens constitute a combined image transfer optical system. When the bottom surface of the semiconductor crystal grain is located at a position twice the focal point of the object side of the combined image transfer optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at a position twice the focal point of the image side, and the lateral magnification is 1 times; the secondary images of the top and bottom surfaces of the semiconductor crystal grain are respectively passed through the telecentric imaging lens to finally form real images of the top and bottom surfaces in the left and right half areas of the camera sensor;

[0032] Step A4: Place the semiconductor die to be tested on a transparent stage.

[0033] The present invention realizes a device for simultaneously detecting the top and bottom surfaces of semiconductor crystal grains based on an image transfer lens so that the real image of the bottom surface is also located beside the transparent glass stage and at a horizontal position close to the bottom surface of the semiconductor crystal grain, which means that the imaging of the bottom surface and the top surface are very close, and basically equal optical path imaging of the top and bottom surfaces of the semiconductor crystal grain can be achieved, thereby reducing the requirement of the detection system for a large depth of field of the imaging lens and reducing the cost of the imaging lens. Description of the drawings:

[0035] Figure 1 It is an existing device that can perform optical inspection on both the top and bottom surfaces of an object (semiconductor crystal grain) at the same time;

[0036] Figure 2 An embodiment of the present invention adopts a combined optical image-relay system consisting of a right-angle image-relay prism and two image-relay lenses;

[0037] Figure 3 An embodiment of the present invention is a combined optical image-relay system consisting of two right-angle image-relay prisms and one image-relay lens;

[0038] Figure 4 yes Figure 3 Another embodiment of the present invention is a combined optical image-transfer system consisting of two right-angle image-transfer prisms and a double-cemented image-transfer lens. Specific implementation method:

[0040] An embodiment (such as Figure 2 ), the device for realizing simultaneous detection of the top and bottom surfaces of semiconductor grains based on the image-relay lens of the present invention comprises a transparent stage 5 for carrying semiconductor grains to be inspected, a first right-angle image-relay prism 6 arranged on a first side of the transparent stage, and a light source 3, a telecentric imaging lens 2 and a camera 1 arranged on a second side of the transparent stage; the inclined surface 601 of the first right-angle image-relay prism faces the transparent stage 5 and is parallel to the transparent stage; a first image-relay lens 7a and a second image-relay lens 7b are respectively arranged on the incident and exit apertures of the imaging light beam on the inclined surface of the first right-angle image-relay prism, and the first image-relay lens 7a and the second image-relay lens 7b are both convex lenses.

[0041] The combined image-relay optical system composed of the first right-angle image-relay prism, the first image-relay lens 7a and the second image-relay lens 7b of the present invention can realize basic equal-optical-path imaging of the top and bottom surfaces, reducing the requirement of the detection system for a large depth of field of the imaging lens, even if the depth of field is less than or equal to the thickness of the grain.

[0042] The bottom surface imaging of the semiconductor crystal grain is located at a horizontal position beside the transparent glass stage and close to the bottom surface of the semiconductor crystal grain. The bottom surface imaging position K of the semiconductor crystal grain can be adjusted by adjusting the distance between the first image transfer lens 7a and the second image transfer lens 7b and the inclined surface 601 of the first right-angle image transfer prism. By locating the bottom surface imaging of the semiconductor crystal grain at a horizontal position beside the transparent glass stage and close to the bottom surface of the semiconductor crystal grain, the detection system can reduce the requirement of the imaging lens for a large depth of field, reduce the cost of the imaging lens, and reduce the difficulty of shooting and image processing.

[0043] The combined image-relay optical system composed of the right-angle image-relay prism and the image-relay lens, when the bottom surface of the semiconductor crystal grain is located at the twice focal position of the object side of the combined image-relay optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the twice focal position of the image side and the lateral magnification is 1; the secondary images of the top surface and bottom surface of the semiconductor crystal grain pass through the telecentric imaging lens respectively and finally form real images of the top surface and bottom surface in the left half area and the right half area of ​​the camera sensor.

[0044] In order to enable the telecentric imaging lens and the camera to capture images, the light source is a ring light source.

[0045] The ring light source is composed of a left half ring and a right half ring, the center of the ring is transparent so that the light path is not blocked, the left half ring and the right half ring correspond to the left half area and the right half area of ​​the camera sensor respectively, and the illumination of the left half ring and the right half ring are controlled separately; since the bottom surface detection illumination light path of the semiconductor crystal grain uses three more image transfer optical elements than the top surface, the illumination illumination of the bottom surface is different from that of the top surface, and the illumination of the left half ring and the right half ring are controlled separately, so that the difference in illumination can be compensated by using the unequal illumination of the left half ring and the right half ring of the ring lighting light source.

[0046] In order to improve the imaging quality, the above-mentioned image transfer lens can be replaced by a double-cemented lens, that is, at least one of the first image transfer lens 7a and the second image transfer lens 7b can be replaced by a double-cemented lens composed of a concave lens and a convex lens.

[0047] The transparent stage may be a transparent glass plate.

[0048] In addition to detecting semiconductor crystal grains, the device of the present application can also simultaneously detect the top and bottom surfaces of other objects placed on the transparent stage.

[0049] The present invention provides a method for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on a transfer lens, comprising the following steps:

[0050] Step A1: placing a transparent stage 5 and a light source 3 between the transparent stage and the telecentric imaging lens in a direction perpendicular to the optical axis of a shooting device composed of a camera 1 and a coaxial telecentric imaging lens 2;

[0051] Step A2: a first right-angle image rotation prism 6 is arranged perpendicular to the optical axis on a first side of the transparent stage; the inclined surface 601 of the first right-angle image rotation prism faces the transparent stage and is parallel to the transparent stage;

[0052] Step A3: a first image transfer lens 7a and a second image transfer lens 7b are respectively arranged on the imaging light beam incident and exit apertures of the inclined surface of the first right-angle image transfer prism, and the bottom surface of the semiconductor crystal grain to be measured placed on the transparent stage is imaged at a horizontal position beside the transparent glass stage and close to the bottom surface of the semiconductor crystal grain. At the same time, the combined image transfer optical system composed of the right-angle image transfer prism and the image transfer lens, when the bottom surface of the semiconductor crystal grain is located at the twice focal position of the object side of the combined image transfer optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the twice focal position of the image side, and the lateral magnification is 1 times; the secondary images of the apex and bottom surfaces of the semiconductor crystal grain are respectively passed through the telecentric imaging lens to finally form real images of the apex and bottom surfaces in the left and right half areas of the camera sensor;

[0053] Step A4: placing the semiconductor crystal grain 4 to be tested on the transparent stage 5 .

[0054] Another embodiment (such as Figure 3 , 4 ), the device for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on the image transfer lens of the present invention comprises a transparent stage 5 for carrying the semiconductor crystal grains to be inspected, second right-angle image transfer prisms 6a, 6b with two right-angle surfaces facing each other on the first side of the transparent stage, and a light source 3, a telecentric imaging lens 2 and a camera 1 arranged on the second side of the transparent stage; the other right-angle surfaces of the two second right-angle image transfer prisms face the transparent stage and are parallel to the transparent stage 5; an image transfer lens 7 is provided between the right-angle surfaces facing each other of the two second right-angle image transfer prisms, and the image transfer lens 7 is a convex lens.

[0055] The combined image-relay optical system composed of the second right-angle image-relay prisms 6a and 6b and the image-relay lens 7 of the present invention can realize basically equal optical path imaging of the top and bottom surfaces, reducing the requirement of the detection system for a large depth of field of the imaging lens, even if the depth of field is less than or equal to the thickness of the grain.

[0056] The bottom surface imaging of the semiconductor crystal grain is located beside the transparent glass stage and at a horizontal position close to the bottom surface of the semiconductor crystal grain. The bottom surface imaging position K of the semiconductor crystal grain can be adjusted by adjusting the distance between the image transfer lens 7 and the right-angle surface of the second right-angle image transfer prism. By locating the bottom surface imaging of the semiconductor crystal grain beside the transparent glass stage and at a horizontal position close to the bottom surface of the semiconductor crystal grain, the detection system can reduce the requirement of the imaging lens for a large depth of field, reduce the cost of the imaging lens, and reduce the difficulty of shooting and image processing.

[0057] The combined image-relay optical system composed of the right-angle image-relay prism and the image-relay lens, when the bottom surface of the semiconductor crystal grain is located at the twice focal position of the object side of the combined image-relay optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at the twice focal position of the image side and the lateral magnification is 1; the secondary images of the top surface and bottom surface of the semiconductor crystal grain pass through the telecentric imaging lens respectively and finally form real images of the top surface and bottom surface in the left half area and the right half area of ​​the camera sensor.

[0058] In order to enable the telecentric imaging lens and the camera to capture images, the light source is a ring light source.

[0059] The ring light source is composed of a left half ring and a right half ring, the center of the ring is transparent so that the light path is not blocked, the left half ring and the right half ring correspond to the left half area and the right half area of ​​the camera sensor respectively, and the illumination of the left half ring and the right half ring are controlled separately; since the bottom surface detection illumination light path of the semiconductor crystal grain uses three more image transfer optical elements than the top surface, the illumination illumination of the bottom surface is different from that of the top surface, and the illumination of the left half ring and the right half ring are controlled separately, so that the difference in illumination can be compensated by using the unequal illumination of the left half ring and the right half ring of the ring lighting light source.

[0060] In order to improve the imaging quality, the above-mentioned image transfer lens can be replaced by a double cemented lens, that is, the image transfer lens 7 can be replaced by a double cemented lens composed of a concave lens and a convex lens.

[0061] The transparent stage may be a transparent glass plate.

[0062] In addition to detecting semiconductor crystal grains, the device of the present application can also simultaneously detect the top and bottom surfaces of other objects placed on the transparent stage.

[0063] The method for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on the image transfer lens of the present invention comprises the following steps:

[0064] Step A1: placing a transparent stage 5 and a light source 3 between the transparent stage and the telecentric imaging lens in a direction perpendicular to the optical axis of a shooting device composed of a camera 1 and a coaxial telecentric imaging lens 2;

[0065] Step A2: two second right-angle image-reversing prisms 6a and 6b are arranged opposite to each other on the first side of the transparent stage; the other right-angle surfaces of the two second right-angle image-reversing prisms face the transparent stage and are parallel to the transparent stage 5;

[0066] Step A3: a transfer lens 7 is provided between the two opposite right-angled surfaces of the second right-angle transfer prisms, and the bottom surface of the semiconductor crystal grain to be measured placed on the transparent stage is imaged at a horizontal position beside the transparent glass stage and close to the bottom surface of the semiconductor crystal grain. At the same time, the combined image transfer optical system composed of the right-angle transfer prism and the transfer lens, when the bottom surface of the semiconductor crystal grain is located at a position twice the focal point of the object side of the combined image transfer optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at a position twice the focal point of the image side, and the lateral magnification is 1 times; the secondary images of the top and bottom surfaces of the semiconductor crystal grain are respectively passed through the telecentric imaging lens to finally form real images of the top and bottom surfaces in the left and right half areas of the camera sensor;

[0067] Step A4: placing the semiconductor crystal grain 4 to be tested on the transparent stage 5 .

[0068] Second right-angle image-turning prism: The light is incident vertically from the right-angle side of the second right-angle image-turning prism, and after one reflection at an incident angle of 45 degrees on the inclined surface, it is emitted vertically from the other right-angle side, resulting in a 90-degree turn. Finally, the optical path of the emitted light is turned 90 degrees compared with the incident light.

[0069] The first right-angle image-turning prism: The light is incident vertically from the hypotenuse of the first right-angle image-turning prism, and produces reflections with an incident angle of 45 degrees at the two right-angle sides. Finally, compared with the incident light, the optical path of the outgoing light is turned 180 degrees.

[0070] Depth of field: refers to the range of distances in front of and behind the subject measured by a photographic lens or other imaging system that can obtain a clear image.

[0071] Coaxial lens: The coaxial lighting source is integrated with the lens and adopts the epitaxial lighting method.

[0072] The present invention realizes a device for simultaneously detecting the top and bottom surfaces of a semiconductor crystal grain based on a rotating image lens so that the real image of the bottom surface is also located at a horizontal position beside a transparent glass stage and close to the bottom surface of the semiconductor crystal grain, even if the bottom and top surface images are very close, thereby reducing the detection system's requirement for a large depth of field of the imaging lens and reducing the cost of the imaging lens.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, ordinary technicians in the field should understand that the specific implementation methods of the present invention can still be modified or some technical features can be replaced by equivalents without departing from the spirit of the technical solution of the present invention, which should be included in the scope of the technical solution for protection of the present invention.

Claims

1. A device for simultaneously detecting the top and bottom surfaces of semiconductor crystal grains based on a rotating image lens, characterized in that: The invention comprises a transparent stage for carrying semiconductor crystal grains to be inspected, a first right-angle image-reversing prism arranged on a first side of the transparent stage, and a light source, a telecentric imaging lens and a camera arranged on a second side of the transparent stage; the inclined surface of the first right-angle image-reversing prism faces the transparent stage and is parallel to the transparent stage; a first image-reversing lens and a second image-reversing lens are respectively arranged on the incident and exit apertures of the imaging light beam of the inclined surface of the first right-angle image-reversing prism; a combined image-reversing optical system formed by the right-angle image-reversing prism and the image-reversing lens, when the bottom surface of the semiconductor crystal grain is located at a position twice the focal point of the object side of the combined image-reversing optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at a position twice the focal point of the image side, and the lateral magnification is 1; the secondary images of the top and bottom surfaces of the semiconductor crystal grain respectively pass through the telecentric imaging lens and finally form real images of the top and bottom surfaces in the left and right half areas of the camera sensor; the image-reversing lens is a convex lens or a double cemented lens.

2. A device for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on a rotating image lens, characterized in that: The invention comprises a transparent stage for carrying semiconductor crystal grains to be inspected, a second right-angle image-reversing prism with two right-angle surfaces facing each other on a first side of the transparent stage, and a light source, a telecentric imaging lens and a camera arranged on a second side of the transparent stage; the other right-angle surfaces of the two second right-angle image-reversing prisms face the transparent stage and are parallel to the transparent stage; an image-reversing lens is arranged between the right-angle surfaces facing each other of the two second right-angle image-reversing prisms; a combined image-reversing optical system formed by the right-angle image-reversing prism and the image-reversing lens, when the bottom surface of the semiconductor crystal grain is located at a position twice the focal point of the object side of the combined image-reversing optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at a position twice the focal point of the image side with a lateral magnification of 1; the secondary images of the top surface and the bottom surface of the semiconductor crystal grain pass through the telecentric imaging lens respectively and finally form real images of the top surface and the bottom surface in the left half area and the right half area of ​​the camera sensor; the image-reversing lens is a convex lens or a double cemented lens.

3. The device for realizing simultaneous detection of the top and bottom surfaces of semiconductor grains based on a transfer lens according to claim 1 or 2, characterized in that: The bottom surface imaging of the semiconductor crystal grain is located beside the transparent glass stage and at a horizontal position close to the bottom surface of the semiconductor crystal grain.

4. The device for realizing simultaneous detection of the top and bottom surfaces of semiconductor grains based on a transfer lens according to claim 1 or 2, characterized in that: The light source is an annular light source; the annular light source is composed of a left half ring and a right half ring, the left half ring and the right half ring correspond to the left half area and the right half area of ​​the camera sensor respectively, and the illumination of the left half ring and the right half ring are controlled separately.

5. The device for realizing simultaneous detection of the top and bottom surfaces of semiconductor grains based on a transfer lens according to claim 1 or 2, characterized in that: The transparent stage is a transparent glass plate.

6. A method for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on a transfer lens, characterized in that: The following steps are involved: Step A1: placing a transparent stage and a light source between the transparent stage and the telecentric imaging lens in a direction perpendicular to the optical axis of a shooting device composed of a camera and a coaxial telecentric imaging lens; Step A2: disposing a first right-angle image rotation prism perpendicular to the optical axis direction on a first side of the transparent stage; the inclined surface of the first right-angle image rotation prism faces the transparent stage and is parallel to the transparent stage; Step A3: a first image transfer lens and a second image transfer lens are respectively arranged on the imaging light beam incident and exit apertures of the inclined surface of the first right-angle image transfer prism, and the bottom surface of the semiconductor crystal grain to be measured placed on the transparent stage is imaged at a horizontal position beside the transparent glass stage and close to the bottom surface of the semiconductor crystal grain. At the same time, the combined image transfer optical system composed of the right-angle image transfer prism and the image transfer lens obtains a real image of the bottom surface of the semiconductor crystal grain at a position twice the focal point of the image side when the bottom surface of the semiconductor crystal grain is located at a position twice the focal point of the combined image transfer optical system on the object side, and the lateral magnification is 1 times; The secondary images of the top and bottom surfaces of the semiconductor crystal grains pass through the telecentric imaging lens and finally form real images of the top and bottom surfaces in the left and right half areas of the camera sensor. Step A4: Place the semiconductor die to be tested on a transparent stage.

7. A method for realizing simultaneous detection of the top and bottom surfaces of semiconductor crystal grains based on a transfer lens, characterized in that: The following steps are involved: Step A1: placing a transparent stage and a light source between the transparent stage and the telecentric imaging lens in a direction perpendicular to the optical axis of a shooting device composed of a camera and a coaxial telecentric imaging lens; Step A2: disposing two second right-angle image-reversing prisms disposed opposite to each other on a first side of the transparent stage; the other right-angle surfaces of the two second right-angle image-reversing prisms face the transparent stage and are parallel to the transparent stage; Step A3: an image transfer lens is provided between the two opposite right-angle surfaces of the second right-angle image transfer prisms, and an image of the bottom surface of the semiconductor crystal grain to be measured placed on the transparent stage is imaged at a horizontal position beside the transparent glass stage and close to the bottom surface of the semiconductor crystal grain. At the same time, when the bottom surface of the semiconductor crystal grain is located at a position twice the focal point of the object side of the combined image transfer optical system, a real image of the bottom surface of the semiconductor crystal grain is obtained at a position twice the focal point of the image side, and the lateral magnification is 1 times. The secondary images of the top and bottom surfaces of the semiconductor crystal grains pass through the telecentric imaging lens and finally form real images of the top and bottom surfaces in the left and right half areas of the camera sensor. Step A4: Place the semiconductor die to be tested on a transparent stage.

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