A broadband low noise amplifier

Abstract

The present invention discloses a broadband low noise amplifier, which belongs to the field of integrated circuits, and includes a matching amplifier stage circuit, a first gain boost stage circuit and a second gain boost stage circuit. The matching amplifier stage circuit adopts a common gate input matching and noise elimination structure to achieve broadband matching, single-ended to differential conversion and extremely low noise performance of the broadband low noise amplifier; in addition, the matching amplifier stage circuit includes a gate inductor and a feedback capacitor, and the high-frequency gain of the broadband low noise amplifier is compensated by connecting the gate inductor and the feedback capacitor in parallel; the first gain boost stage circuit is used to compensate for the intermediate frequency band gain of the broadband low noise amplifier; the second gain boost stage circuit is used to compensate for the low frequency band gain of the broadband low noise amplifier; the three-stage circuit of the broadband low noise amplifier compensates for the full frequency band gain. The present invention realizes the functions of broadband input matching and high-frequency gain compensation.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuits, and in particular to a broadband low-noise amplifier. Background Art

[0002] With the development of technology, integrated wireless communication chips are widely used in combat systems, large-scale emergency communication systems, navigation and positioning, Internet of Things, sensor networks, digital TV broadcasting, public safety, smart buildings and homes, radio stations, mobile terminals, toy electronics and other industries, and a variety of communication protocol standards have been derived accordingly. In order to meet the needs of the market, the most popular research in the current wireless communication field is to design a transceiver chip compatible with multiple protocols to meet the growing needs of users for voice, video, data browsing, etc. This requires that the first-stage amplifier (low noise amplifier) ​​for signal processing of wireless communication transceivers needs to have broadband, high gain, high linearity, low noise, impedance matching and other characteristic indicators. At the same time, in order to better process the signal, the low noise amplifier is required to output differential signals.

[0003] The broadband low noise amplifier is a very important module in the communication link. It is located at the front end of the entire receiving link circuit, directly amplifies the antenna receiving signal, and plays a vital role in the signal quality. In this process, the useful signal in the communication frequency band is amplified by the broadband low noise amplifier, and the noise generated by the wireless space channel is suppressed by the gain of the amplifier. At the same time, the noise added by the amplifier itself is very small, so that the useful signal is amplified without affecting its quality. Various interferences from the wireless space channel will produce signal intermodulation, which will be suppressed by the good linear performance of the amplifier. The broadband low noise amplifier module is usually required to have broadband input matching, low in-band noise, and flat in-band gain. Generally speaking, the design of low noise amplifiers for specific application environments mostly requires narrowband input, low noise and high gain; but amplifiers for broadband input and low noise often have shortcomings in various aspects, such as difficult broadband input matching, large noise coefficient, and high-frequency gain attenuation.

[0004] In the existing technology, broadband low noise amplifiers usually use common gate-common source (CG-CS) amplifiers. m 、Load R loadThe gain target is achieved by changing the gain size; in addition, the differential output cancels the noise of the common-gate transistor channel in the amplifier, reducing the noise figure (NF); overall, single-ended input and differential balun (balun) output are achieved, while meeting the impedance matching requirements. However, the defects of this technology are: this CG-CS amplifier achieves partial noise cancellation, but due to the presence of parasitic capacitance at the input, the input matching will deteriorate as the input frequency increases; the output impedance decreases as the frequency increases due to parasitics at the output, causing the overall gain to decrease as the frequency increases. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a broadband low noise amplifier in view of the problem that the input matching of the broadband low noise amplifier varies greatly with frequency and the high frequency gain attenuates with frequency in the background technology.

[0006] The technical solution adopted by the present invention to solve the technical problem is: constructing a broadband low-noise amplifier, including: a matching amplifier stage circuit, a first gain boost stage circuit and a second gain boost stage circuit;

[0007] The input end of the matching amplifier stage circuit is the input end of the broadband low noise amplifier, and is used to input a single-ended input signal; the differential output end of the matching amplifier stage circuit is connected to the differential input end of the first gain boost stage circuit; the differential output end of the first gain boost stage circuit is connected to the differential input end of the second gain boost stage circuit; the differential output end of the second gain boost stage circuit is the differential output end of the broadband low noise amplifier;

[0008] The matching amplifier stage circuit includes a gate inductor and a feedback capacitor, and the high-frequency gain of the broadband low-noise amplifier is compensated and the high-frequency matching degree is increased by connecting the gate inductor and the feedback capacitor in parallel; the first gain boost stage circuit is used to compensate for the intermediate frequency band gain of the broadband low-noise amplifier; the second gain boost stage circuit is used to compensate for the low frequency band gain of the broadband low-noise amplifier; and the full-band gain is compensated by the three-stage circuit of the broadband low-noise amplifier.

[0009] Preferably, the matching amplifier stage circuit further includes an input capacitor, an off-chip inductor, a first transistor, a second transistor, a third transistor, a fourth transistor, a first load resistor, a second load resistor, a first output parasitic coupling capacitor, and a second output parasitic coupling capacitor;

[0010] The source of the first transistor is respectively connected to one end of the input capacitor and one end of the off-chip inductor; the other end of the input capacitor is connected to the gate of the second transistor; the other end of the off-chip inductor is connected to the source of the second transistor; the drain of the first transistor is connected to the source of the third transistor; the drain of the second transistor is connected to the source of the fourth transistor; the feedback capacitor is arranged between the gate of the first transistor and the drain of the second transistor; the gate inductor is arranged between the gate of the third transistor and the gate of the fourth transistor; one end of the first output parasitic coupling capacitor is respectively connected to the drain of the third transistor and one end of the first load resistor, and the other end is connected to a differential output end of the matching amplifier stage circuit; one end of the second output parasitic coupling capacitor is respectively connected to the drain of the fourth transistor and one end of the second load resistor, and the other end is connected to another differential output end of the matching amplifier stage circuit; the other end of the first load resistor is connected to the other end of the second load resistor.

[0011] Preferably, the first transistor is an input common-gate transistor, the second transistor is an input common-source transistor, the third transistor is an output common-gate transistor, and the fourth transistor is an output common-gate transistor.

[0012] Preferably, the first transistor is used to convert the noise current inputted at the input end into a first voltage at a differential output end of the matching amplifier stage circuit; the second transistor is used to convert the noise current inputted at the input end into a second voltage at another differential output end of the matching amplifier stage circuit; and the noise of the first transistor is eliminated by summing the second noise voltage with the first noise voltage.

[0013] Preferably, the first gain boost stage circuit comprises a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a first inductor, a second inductor, a third output parasitic coupling capacitor and a fourth output parasitic coupling capacitor;

[0014] The gate of the fifth transistor is respectively connected to a differential output terminal of the matching amplifier stage circuit and one end of the first resistor, and the drain of the fifth transistor is connected to the source of the seventh transistor; the gate of the sixth transistor is respectively connected to another differential output terminal of the matching amplifier stage circuit and one end of the second resistor, and the drain of the sixth transistor is connected to the source of the eighth transistor; the other end of the first resistor is connected to the other end of the second resistor; the source of the fifth transistor is connected to the source of the sixth transistor; the gate of the seventh transistor is connected to the gate of the eighth transistor; one end of the third output parasitic coupling capacitor is respectively connected to one end of the third resistor and the drain of the seventh transistor, and the other end is connected to a differential output terminal of the first gain boost stage circuit; the other end of the third resistor is connected to one end of the first inductor; one end of the fourth output parasitic coupling capacitor is respectively connected to one end of the fourth resistor and the drain of the eighth transistor, and the other end is connected to another differential output terminal of the first gain boost stage circuit; the other end of the fourth resistor is connected to one end of the second inductor; the other end of the first inductor is connected to the other end of the second inductor.

[0015] Preferably, the fifth transistor and the sixth transistor are variable transconductance transistors; and the seventh transistor and the eighth transistor are common-gate transistors.

[0016] Preferably, the first resistor and the second resistor have equal resistance values.

[0017] Preferably, the circuit structures of the first gain boosting stage circuit and the second gain boosting stage circuit are completely the same.

[0018] The above-disclosed broadband low-noise amplifier has the following beneficial effects: the present invention adopts negative feedback and gain compensation to complete the functions of broadband input matching and high-frequency gain compensation, and has the advantages of simple circuit matching, controllable gain flatness, and high three-level isolation, overcoming the disadvantages of common broadband low-noise amplifiers such as difficult input matching and high-frequency gain attenuation. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A structural block diagram of a broadband low noise amplifier provided by the present invention;

[0020] Figure 2 A circuit schematic diagram of a matching amplifier stage circuit in a broadband low-noise amplifier provided by the present invention;

[0021] FIG3( a ) is a comparison diagram of simulation results of circuit noise coefficient of a broadband low noise amplifier provided by the present invention with and without feedback capacitor;

[0022] FIG3( b ) is a comparison diagram of simulation results of circuit gain and matching of a broadband low noise amplifier provided by the present invention with and without feedback capacitor;

[0023] Figure 4 A circuit schematic diagram of a first gain boost stage circuit in a broadband low noise amplifier provided by the present invention;

[0024] Figure 5 A small signal equivalent diagram of a first gain boost stage circuit in a broadband low noise amplifier provided by the present invention;

[0025] Figure 6 A circuit schematic diagram of a second gain boost stage circuit in a broadband low noise amplifier provided by the present invention. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0027] See also Figure 1 , Figure 1 A schematic diagram of the structure of a broadband low noise amplifier provided by the present invention, the broadband low noise amplifier comprises: a matching amplifier stage circuit 1, a first gain boost stage circuit 2 and a second gain boost stage circuit 3;

[0028] The input end of the matching amplifier stage circuit 1 is the input end In1 of the broadband low noise amplifier, which is used to input the single-ended input signal S In ; The differential output terminals OUT1+ and OUT1- of the matching amplifier stage circuit 1 are connected to the differential input terminals of the first gain boost stage circuit 2; the differential output terminals OUT2+ and OUT2- of the first gain boost stage circuit 2 are connected to the differential input terminals of the second gain boost stage circuit 3; the differential output terminals of the second gain boost stage circuit 3 are the differential output terminals OUT3+ and OUT3- of the broadband low noise amplifier;

[0029] The matching amplifier stage circuit 1 adopts a common gate input matching and noise elimination structure to achieve broadband matching, single-ended to differential conversion and extremely low noise performance of the broadband low noise amplifier; in addition, the matching amplifier stage circuit 1 also includes a gate inductor L g and feedback capacitor C fb , through the gate inductance L g and feedback capacitor C fbThe parallel connection can compensate the high-frequency gain of the broadband low-noise amplifier and increase the high-frequency matching degree; the first gain boosting stage circuit 2 is used to compensate the intermediate frequency band gain of the broadband low-noise amplifier; the second gain boosting stage circuit 3 is used to compensate the low-frequency band gain of the broadband low-noise amplifier; the full-band gain is compensated together by the three-stage circuit of the broadband low-noise amplifier.

[0030] 1. Matching amplifier stage circuit 1

[0031] See also Figure 2 , is a circuit schematic diagram of a matching amplifier stage circuit in a broadband low noise amplifier provided by the present invention, wherein the matching amplifier stage circuit 1 includes an input capacitor C fin , external inductance L off , a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a first load resistor R CG , the second load resistor R CS , a first output parasitic coupling capacitor C1 and a second output parasitic coupling capacitor C2; the source of the first transistor M1 is connected to the input capacitor C fin One end and the external inductor L off One end of the input capacitor C fin The other end of the inductor L is connected to the gate of the second transistor M2; off The other end of the capacitor C is connected to the source of the second transistor M2; the drain of the first transistor M1 is connected to the source of the third transistor M3; the drain of the second transistor M2 is connected to the source of the fourth transistor M4; the feedback capacitor C fb Set between the gate of the first transistor M1 and the drain of the second transistor M2; the gate inductor L g The first output parasitic coupling capacitor C1 is arranged between the gate of the third transistor M3 and the gate of the fourth transistor M4; one end of the first output parasitic coupling capacitor C1 is connected to the drain of the third transistor M3 and the first load resistor R CG One end of the second output parasitic coupling capacitor C2 is connected to the drain of the fourth transistor M4 and the second load resistor R CS One end of the first load resistor R CG The other end and the second load resistor R CS The first transistor M1 is an input common-gate transistor, the second transistor M2 is an input common-source transistor, the third transistor M3 is an output common-gate transistor, and the fourth transistor M4 is an output common-gate transistor.

[0032] The parameters in the matching amplifier stage circuit 1 are as follows:

[0033] iin : Antenna signal S In Equivalent input small signal current;

[0034] V in : Antenna signal S In Equivalent input small signal voltage;

[0035] g m,CG : Transconductance of input common-gate transistor M1;

[0036] g m,CS : Transconductance of input common-source transistor M2;

[0037] V n,in : The noise voltage generated by M1 is equivalent to its source;

[0038] V n,CG : Equivalent noise voltage of M1 at the output (drain);

[0039] V n,CS : Equivalent noise voltage of M2 at the output (drain);

[0040] A v,CG : The amplification gain of M1 to the signal;

[0041] A v,CS : The amplification gain of M2 to the signal;

[0042] V out,CG : Equivalent noise voltage of M1 at the output (source).

[0043] The matching amplifier circuit 1 is composed of an input common-gate transistor M1 and an input common-source transistor M2. The matching principle is to use the transconductance g of M1. m,CG When considering low frequency input matching and gain and noise, the gate inductance L of the output common-gate transistor M3 can be ignored. g and feedback capacitor C fb Calculate the input impedance R of the input common-gate transistor M1 in It can be regarded as the reciprocal of its transconductance, that is, 1 / g m,CG , the antenna impedance is R S , as long as the two are equal, impedance matching can be achieved in a fairly wide frequency range, that is,

[0044]

[0045] The principle of converting a single-ended signal into a differential signal in matching amplifier stage 1 is as follows: First, for the antenna impedance R s The signal input to the source of M1 can be considered as a small signal current i in, the small signal current will pass through M1, and the load R CG According to Kirchhoff's current law, the input small signal current is calculated as:

[0046]

[0047] This means that the input impedance R of the input common-gate transistor M1 is in It can be expressed as:

[0048]

[0049] From equation (3), we can conclude that the gain A provided by M1 is v,CG A v,CG =g m,CG ·R CG As for M2, it is a standard input common source amplifier transistor, so its gain is equal to the multiplication of transconductance and load, and at the same time, the phase of the signal is reversed, that is, A v,CS =-g m,CS ·R CS In summary, we have:

[0050] A v,CG =-A v,CS =g m,CG ·R CG =g m,CS ·R CS (4)

[0051] From formula (4), we can see that for the same antenna signal, the amplification gain of M1 and M2 is the same, but the polarity is opposite. Therefore, the leakage outputs of M1 and M2 form differential signals with the same amplitude and a phase difference of 180°, thus completing the conversion process from single-ended signal to differential signal.

[0052] The principle of low noise in the matching amplifier stage circuit 1 is to use the input common source transistor M2 to amplify the noise Vn at the source of M1, generating a voltage that is equal to the drain of M1, that is, R CG The noise with the same phase and amplitude at the output differential signal can cancel each other out. In this way, the noise generated by M1 is eliminated overall. Since M1 is a transistor in the first stage of the broadband low noise amplifier, it amplifies the signal. Therefore, the elimination of this part of the noise will greatly benefit the low noise design of the broadband low noise amplifier. This process needs to meet some conditions. First, the noise current generated by M1 is from R CG R flowing to the antenna S , this noise current will generate noise voltage at the source and drain of M1 respectively:

[0053]

[0054]

[0055] At the same time, V n,in Amplified by the gate of M2, according to equation (4), this noise voltage is amplified as:

[0056] V n,CS =V n,in ·A v,CS =α·i n ·R S ·(-g m,CS ·R CS ) (7)

[0057] Based on equations (4) and (5), equation (7) can be converted into:

[0058] V n,CS = -α·i n ·R CG =V n,CG (8)

[0059] It can be seen that at the drains of M1 and M2, the noise voltage generated by M1 is in phase and has the same amplitude. Since the differential signal is obtained by subtracting the signals at both ends, in the differential signal transmission, this noise is offset during the subtraction process due to the consistency of phase amplitude, so that the noise of M1 is completely eliminated. It is worth noting that since M1 and M2 are amplifying transistors in the first stage circuit of the broadband low noise amplifier, their noise has the greatest impact on the broadband low noise amplifier. Eliminating the noise of M1 will greatly optimize the noise performance of the broadband low noise amplifier.

[0060] On the other hand, the noise of M2 cannot be eliminated by this structure, but since the impedance matching work is mainly completed by M1, the size of M2 does not necessarily require it to maintain a specific transconductance, so the noise of M2 can be suppressed by increasing the size of M2 (i.e. increasing the transconductance). In order to satisfy equation (4), the load resistance R of M2 needs to be reduced accordingly. CS This causes the output impedance of the matching amplifier stage to be unbalanced, but this does not pose a problem for the high impedance formed by the subsequent gate input.

[0061] In the matched amplifier stage circuit 1, although M2 can change its size to increase transconductance to suppress noise, its gain is still limited by M1 because it must remain the same size as M1. In order to achieve impedance matching, M1 needs to meet This limits its transconductance g m,CG If the load resistance R CGIf we try to increase the gain by using the gate inductor L, the output dynamic range will decrease due to the limitation of the power supply voltage, and even M1 will not work properly due to insufficient drain voltage. Therefore, it is difficult to achieve high gain performance in the matching amplifier stage. Therefore, a gate inductor L is added to the matching amplifier stage circuit 1. g and feedback capacitor C fb The drain of M2 is connected to the feedback capacitor C fb Connect the gate end of M1 to match the input impedance, which is closer to the source impedance and thus meets the input matching and gain improvement requirements. fb The present invention verifies the actual situation through Spectre simulator simulation, and the simulation results are shown in Figure 3(a) and Figure 3(b). As shown in Figure 3(a), the simulation shows the broadband low noise amplifier provided by the present invention with or without feedback capacitor C under the same size, bias, current, resistance, and process. fb When the circuit noise coefficient is compared: when there is feedback capacitor C fb The circuit noise factor is better than that without feedback capacitor C fb As shown in FIG3(b), the simulation shows the broadband low noise amplifier provided by the present invention with or without feedback capacitor C under the same size, bias, current, resistance, and process. fb When the circuit gain and matching degree are compared: when there is feedback capacitor C fb The circuit gain is better than that without feedback capacitor C fb When the feedback capacitor C fb The circuit matching degree is better than that without feedback capacitor C fb (Note: NF in simulation Figure 3(a) represents noise factor; S21 in simulation Figure 3(b) represents gain, and S11 represents matching degree.)

[0062] 2. First gain boost stage circuit 2

[0063] See also Figure 4 , a circuit schematic diagram of a first gain boost stage circuit in a broadband low noise amplifier provided by the present invention, the first gain boost stage circuit 2 includes a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a first resistor R F1 , the second resistor R F2 , the third resistor R L2L , the fourth resistor R L2R , the first inductor L 2L , the second inductor L 2R , the third output parasitic coupling capacitor C3 and the fourth output parasitic coupling capacitor C4; the gate of the fifth transistor M5 is respectively connected to a differential output terminal OUT1+ of the matching amplifier stage circuit 1 and the first resistor R F1The gate of the sixth transistor M6 is respectively connected to another differential output terminal OUT1- of the matching amplifier stage circuit 1 and the second resistor R F2 The drain of the first resistor R F1 The other end and the second resistor R F2 The source of the fifth transistor M5 is connected to the source of the sixth transistor M6; the gate of the seventh transistor M7 is connected to the gate of the eighth transistor M8; one end of the third output parasitic coupling capacitor C3 is connected to the third resistor R L2L and the drain of the seventh transistor M7, and the other end is connected to a differential output terminal OUT2+ of the first gain boosting stage circuit 2; the third resistor R L2L The other end of the first inductor L 2L One end of the fourth output parasitic coupling capacitor C4 is connected to the fourth resistor R L2R One end of the fourth resistor R is connected to the drain of the eighth transistor M8, and the other end is connected to another differential output terminal OUT2- of the first gain boost stage circuit 2; L2R The other end of the second inductor L 2R One end of the first inductor L 2L The other end and the second inductor L 2R The fifth transistor M5 and the sixth transistor M6 are transistors with variable transconductance; the seventh transistor M7 and the eighth transistor M8 are common-gate transistors; the first resistor R F1 and the second resistor R F2 The resistance values ​​are equal.

[0064] The parameters in the first gain boost stage circuit 2 are as follows:

[0065] BLNA H :LNA high gain bit;

[0066] BLNA M :LNA low gain bit;

[0067] M5, M6: gm variable unit;

[0068] M7, M8: common gate amplifier;

[0069] g m : Transconductance of transistor;

[0070] g″ m : The second-order derivative of the transistor transconductance.

[0071] like Figure 4 In the gain boosting stage circuit 2 shown, M5 and M6 are amplifier transistors operating in the saturation region. Figure 4The small signal equivalent diagram of the common gate amplifier M7 and the common source amplifier M5 is shown in Figure 5. The transconductance of the common gate amplifier M7 and the common source amplifier M5 is equivalent to a transconductance unit Gm. H and BLNA M Control the additional load tube. Load inductance L 2L and load inductance L 2R Equivalent to Figure 5 L load ; Load resistance R 2L , load resistance R 2R Equivalent to Figure 5 R load The third output parasitic coupling capacitor C3 and the fourth output parasitic coupling capacitor C4 are equivalent to Figure 5 Middle C load , the equivalent impedance is Z T , considering that the output impedance of the Gm transconductance unit is simplified to the resistor R0, the equivalent load of the small signal circuit is R L is the equivalent load Z T In parallel with R0, as shown in formula (9), where s represents the signal transformation parameter:

[0072]

[0073] Input impedance Z of small signal circuit in As shown in formula (10):

[0074]

[0075] The gain of the small signal circuit is shown in (11):

[0076] A v =(1 / Z in -sC gs -Gm)R L (11)

[0077] Equations (9) to (11) represent the impedance and gain in small signal circuits.

[0078] To simplify the calculation, we can let R load =0, since R0 is very large, the output impedance is mainly LC impedance, then the effective impedance R of the small signal circuit can be simplified L and gain A v :

[0079]

[0080] A v =GmR L (13)

[0081] According to different L load Cload You can choose different resonant frequencies and impedances, and you can get different gains Gm*R by controlling different Gm. L . Finally, the gain of stage 2 is increased: A v =GmR L The gain of the intermediate frequency can be compensated.

[0082] 3. Second gain boost stage circuit 3

[0083] See also Figure 6 , the circuit schematic diagram of the second gain boost stage circuit in a broadband low noise amplifier provided by the present invention, the circuit structure of the second gain boost stage circuit 3 is exactly the same as the circuit structure of the first gain boost stage circuit 2. Therefore, it can be obtained by the same logic that the gain A of the second gain boost stage circuit 3 v3 =GmR L 'It can compensate for the gain of low-mid frequencies.

[0084] In summary, the present invention aims at the disadvantages of difficult input matching and high-frequency gain attenuation of broadband low-noise amplifiers, and proposes a circuit composed of three stages: a matching amplifier stage circuit, a first gain boost stage circuit, and a second gain boost stage circuit; the matching amplifier stage circuit adopts a common-gate input matching and noise elimination structure to achieve broadband matching, single-ended to differential conversion, and extremely low noise performance of the broadband low-noise amplifier; in addition, the matching amplifier stage circuit also includes a gate inductor and a feedback capacitor, and the high-frequency gain of the broadband low-noise amplifier is compensated by connecting the gate inductor and the feedback capacitor in parallel; the first gain boost stage circuit is used to compensate for the intermediate frequency band gain of the broadband low-noise amplifier; the second gain boost stage circuit is used to compensate for the low-frequency band gain of the broadband low-noise amplifier; the three-stage circuit of the broadband low-noise amplifier together compensates for the full-band gain. The present invention realizes the functions of broadband input matching and high-frequency gain compensation, and has the advantages of simple circuit matching, controllable gain flatness, and high three-stage isolation.

[0085] Various operations of the embodiments are provided herein. In one embodiment, the one or more operations described may constitute computer-readable instructions stored on one or more computer-readable media, which, when executed by an electronic device, will cause a computing device to perform the operations. The order in which some or all operations are described should not be interpreted as implying that these operations must be sequence-dependent. Those skilled in the art will appreciate alternative sequencing with the benefit of this specification. Moreover, it should be understood that not all operations must exist in each embodiment provided herein.

[0086] Moreover, the word "preferred" as used herein is meant to be used as an example, instance or illustration. Any aspect or design described herein as "preferred" is not necessarily to be construed as being more advantageous than other aspects or designs. On the contrary, the use of the word "preferred" is intended to present concepts in a specific way. The term "or" as used in this application is intended to mean an inclusive "or" rather than an exclusive "or". That is, unless otherwise specified or clear from the context, "X uses A or B" means any one of the naturally included permutations. That is, if X uses A; X uses B; or X uses both A and B, then "X uses A or B" is satisfied in any of the foregoing examples.

[0087] Moreover, although the present disclosure has been shown and described with respect to one or more implementations, those skilled in the art will think of equivalent variations and modifications based on the reading and understanding of this specification and the accompanying drawings. The present disclosure includes all such modifications and variations, and is limited only by the scope of the appended claims. In particular, with respect to the various functions performed by the above-mentioned components (such as elements, resources, etc.), the terms used to describe such components are intended to correspond to any component (unless otherwise indicated) that performs the specified function of the component (such as it is functionally equivalent), even if the structure is not equivalent to the disclosed structure of the function in the exemplary implementation of the present disclosure shown herein. In addition, although the specific features of the present disclosure have been disclosed with respect to only one of several implementations, such features can be combined with one or more other features of other implementations that may be desired and advantageous for a given or specific application. Moreover, insofar as the terms "including", "having", "containing" or their variations are used in specific embodiments or claims, such terms are intended to be included in a manner similar to the term "comprising".

[0088] The functional units in the embodiments of the present invention may be integrated into a processing module, or each unit may exist physically separately, or two or more units may be integrated into one module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. If the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium. The above-mentioned storage medium may be a read-only memory, a disk or an optical disk, etc. The above-mentioned devices or systems may execute the methods in the corresponding method embodiments.

[0089] In summary, although the present invention has been disclosed as above in terms of preferred embodiments, the above preferred embodiments are not intended to limit the present invention. A person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the scope defined in the claims.

Claims

1. A broadband low noise amplifier, characterized in that: include: A matching amplifier stage circuit (1), a first gain boost stage circuit (2) and a second gain boost stage circuit (3); The input end of the matching amplifier stage circuit (1) is the input end (In1) of the broadband low noise amplifier, and is used to input a single-ended input signal (SIn); the differential output end (OUT1+, OUT1-) of the matching amplifier stage circuit (1) is connected to the differential input end of the first gain boost stage circuit (2); the differential output end (OUT2+, OUT2-) of the first gain boost stage circuit (2) is connected to the differential input end of the second gain boost stage circuit (3); the differential output end of the second gain boost stage circuit (3) is the differential output end (OUT3+, OUT3-) of the broadband low noise amplifier; The matching amplifier stage circuit (1) includes a gate inductor (L g ) and the feedback capacitor (C fb ), through the gate inductance (L g ) and the feedback capacitor (C fb ) are connected in parallel to compensate for the high-frequency gain of the broadband low-noise amplifier and increase the high-frequency matching degree; the first gain boosting stage circuit (2) is used to compensate for the intermediate frequency band gain of the broadband low-noise amplifier; the second gain boosting stage circuit (3) is used to compensate for the low frequency band gain of the broadband low-noise amplifier; the full frequency band gain is compensated by the three-stage circuit of the broadband low-noise amplifier; The matching amplifier stage circuit (1) further comprises an input capacitor (C fin ), external inductance (L off ), a first transistor (M1), a second transistor (M2), a third transistor (M3), a fourth transistor (M4), a first load resistor (R CG ), the second load resistor (R CS ), a first output parasitic coupling capacitor (C1) and a second output parasitic coupling capacitor (C2); The source of the first transistor (M1) is connected to the input capacitor (C fin ) and the off-chip inductor (L off ) one end; the input capacitor (C fin ) is connected to the gate of the second transistor (M2); the off-chip inductor (L off ) is connected to the source of the second transistor (M2); the drain of the first transistor (M1) is connected to the source of the third transistor (M3); the drain of the second transistor (M2) is connected to the source of the fourth transistor (M4); the feedback capacitor (C fb ) is arranged between the gate of the first transistor (M1) and the drain of the second transistor (M2); the gate inductor (L g ) is arranged between the gate of the third transistor (M3) and the gate of the fourth transistor (M4); one end of the first output parasitic coupling capacitor (C1) is connected to the drain of the third transistor (M3) and the first load resistor (R CG ) and the other end is connected to a differential output end (OUT1+) of the matching amplifier stage circuit (1); one end of the second output parasitic coupling capacitor (C2) is connected to the drain of the fourth transistor (M4) and the second load resistor (R CS ) and the other end is connected to another differential output end (OUT1-) of the matching amplifier stage circuit (1); the first load resistor (R CG ) and the other end of the second load resistor (R CS ) is connected to the other end; The first gain boost stage circuit (2) comprises a fifth transistor (M5), a sixth transistor (M6), a seventh transistor (M7), an eighth transistor (M8), a first resistor (R F1 )、Second resistor (R F2 )、The third resistor (R L2L )、The fourth resistor (R L2R ), the first inductor (L 2L )、Second inductor (L 2R ), a third output parasitic coupling capacitor (C3) and a fourth output parasitic coupling capacitor (C4); The gate of the fifth transistor (M5) is respectively connected to a differential output terminal (OUT1+) of the matching amplifier stage circuit (1) and the first resistor (R F1 ), whose drain is connected to the source of the seventh transistor (M7); the gate of the sixth transistor (M6) is respectively connected to another differential output terminal (OUT1-) of the matching amplifier stage circuit (1) and the second resistor (R F2 ) has a drain connected to the source of the eighth transistor (M8); the first resistor (R F1 ) and the other end of the second resistor (R F2 ) is connected to the other end of the fifth transistor (M5); the source of the fifth transistor (M5) is connected to the source of the sixth transistor (M6); the gate of the seventh transistor (M7) is connected to the gate of the eighth transistor (M8); one end of the third output parasitic coupling capacitor (C3) is connected to the third resistor (R L2L ) and the drain of the seventh transistor (M7), and the other end is connected to a differential output end (OUT2+) of the first gain boost stage circuit (2); the third resistor (R L2L ) is connected to the other end of the first inductor (L 2L ) one end; one end of the fourth output parasitic coupling capacitor (C4) is connected to the fourth resistor (R L2R ) and the drain of the eighth transistor (M8), and the other end is connected to another differential output end (OUT2-) of the first gain boost stage circuit (2); the fourth resistor (R L2R ) is connected to the other end of the second inductor (L 2R ) one end; the first inductor (L 2L ) and the other end of the second inductor (L 2R ) is connected to the other end; The circuit structures of the first gain boosting stage circuit (2) and the second gain boosting stage circuit (3) are completely the same.

2. The broadband low noise amplifier according to claim 1, characterized in that: The first transistor (M1) is an input common-gate transistor, the second transistor (M2) is an input common-source transistor, the third transistor (M3) is an output common-gate transistor, and the fourth transistor (M4) is an output common-gate transistor.

3. The broadband low noise amplifier according to claim 1, characterized in that: The first transistor (M1) is used to convert the noise current inputted at the input terminal (In1) into a first voltage at a differential output terminal (OUT1+) of the matching amplifier stage circuit (1); the second transistor (M2) is used to convert the noise current inputted at the input terminal (In1) into a second voltage at another differential output terminal (OUT1-) of the matching amplifier stage circuit (1); and the noise of the first transistor (M1) is eliminated by summing the second voltage with the first voltage.

4. The broadband low noise amplifier according to claim 1, characterized in that: The fifth transistor (M5) and the sixth transistor (M6) are transistors with variable transconductance; the seventh transistor (M7) and the eighth transistor (M8) are common-gate transistors.

5. The broadband low noise amplifier according to claim 1, characterized in that: The first resistor (R F1 ) and the second resistor (R F2 ) have equal resistance values.

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