Ion source device and movable radio frequency scanning ion device

Abstract

The present application relates to an ion source device and a movable radio frequency scanning ion equipment, the ion source device comprises: a radio frequency matching network, a radio frequency ion source; wherein the radio frequency matching network is a matching network with a Π-type structure; the input end of the radio frequency matching network is connected to the radio frequency source, and the output end of the radio frequency matching network is connected to one end of the radio frequency coil of the radio frequency ion source; the other end of the radio frequency coil of the radio frequency ion source is grounded; the radio frequency matching network is connected to the radio frequency source through the input end, and the radio frequency source is transmitted to the radio frequency coil of the radio frequency ion source through the output end, and the radio frequency coil ionizes the gas entering the ionization chamber through the gas pipeline to generate ions, and generates an ion beam through the drive of the screen grid. The above-mentioned ion source device simplifies the structure of the radio frequency matching network, which is convenient for mobile use. In the above-mentioned movable radio frequency scanning ion equipment, the ion source can be easily moved to realize the scanning processing of the mirror, which improves the use effect of the radio frequency scanning ion equipment.

Description

Technical Field

[0001] The present application relates to the technical field of radio frequency ion sources, and in particular to an ion source device and a movable radio frequency scanning ion equipment. Background Art

[0002] Ion source technology is an applied science and technology with a wide range of uses, many types, many sciences involved, strong process technology, and very rapid development. It is currently used in many fields. For example, due to its higher processing certainty, ion beam polishing has been introduced into the field of optical processing. Ion beam polishing needs to be applied under vacuum conditions, and the material removal rate formed by the sputtering effect is relatively low. Ion beam polishing is more suitable for the application in the final stage of optical processing to achieve higher precision or final processing goals. For large-sized workpieces, the mirror surface needs to be scanned by moving the ion source, generally using a movable radio frequency scanning ion device. That requires the ion source itself to meet the requirements of spatial movement. Based on this situation, only DC-driven ion sources could be used in the past. In the existing ion beam polishing process, the general ion source needs to be able to work continuously without consumables (working time is more than 100 hours), but the DC-driven ion source generally has a continuous working time of only about 10 hours. For large lenses, the processing time sometimes exceeds dozens of hours. This greatly limits the process itself.

[0003] For this reason, more and more RF ion sources are being used. They generate plasma through RF ionization, and then accelerate positive ions through a grid electric field to produce an ion beam. By ionizing the gas through RF, the continuous working time can reach more than 1,000 hours. There are no consumables and the service life is long. However, the RF ion source needs to be used in conjunction with an RF matching network. There are too many connections between the existing RF matching network and the RF ion source, and the structure is complex. In addition, the position between the RF matching network and the RF ion source is relatively fixed, so that the ion source can only be fixedly installed, and spatial mobile scanning cannot be achieved, which affects its use effect in ion beam polishing. Summary of the invention

[0004] The purpose of the present application is to solve one of the above-mentioned technical defects, namely, the problem that there are too many connections between the existing RF matching network and the RF ion source and the structure is complicated.

[0005] In order to achieve the above objectives, this application provides the following technical solutions:

[0006] An ion source device comprises: a radio frequency matching network and a radio frequency ion source; wherein the radio frequency matching network is a matching network with a Π-type structure;

[0007] The input end of the radio frequency matching network is connected to the radio frequency source, and the output end of the radio frequency matching network is connected to one end of the radio frequency coil of the radio frequency ion source;

[0008] The other end of the radio frequency coil of the radio frequency ion source is grounded;

[0009] The RF matching network is connected to the RF source through the input end, and the RF source is transmitted to the RF coil of the RF ion source through the output end. The RF coil ionizes the gas entering the ionization chamber through the gas pipeline to generate ions, and generates an ion beam by driving the screen grid.

[0010] In one embodiment, the radio frequency matching network and the radio frequency ion source are integrated into one design, and the radio frequency matching network and the radio frequency ion source are connected in series and built into an integrated housing;

[0011] Among them, the front end of the RF ion source is located at the front of the integrated shell; the gas pipeline connected to the ionization chamber extends to the rear of the integrated shell, and the driving power input port of the screen grid and the RF source input port of the matching network are arranged at the rear of the integrated shell.

[0012] In one embodiment, the RF matching network includes an inductor L, a capacitor C load and capacitor C tune , wherein the inductor L is connected in series on the transmission line, and the capacitor C load and capacitor C tune Connect the two ends of the inductor L and the ground respectively.

[0013] In one embodiment, the capacitor C of the RF matching network load and capacitor C tune The ground end of the radio frequency ion source is connected to the integrated housing, and the other end of the radio frequency coil of the radio frequency ion source is connected to the integrated housing.

[0014] In one embodiment, the integrated housing is of sealed design.

[0015] In the above ion source device, the RF matching network is connected to the RF source through the input end, and the output end has only one RF line connected to one end of the RF coil of the RF ion source, while the other end of the RF coil of the RF ion source is grounded. Thus, the structure of the RF matching network is simplified, and it is convenient for mobile use.

[0016] In addition, in order to solve the problem that the above-mentioned ion source can only be fixedly installed and cannot realize spatial mobile scanning, the present application also provides the following technical solutions:

[0017] A movable radio frequency scanning ion device comprises: the above-mentioned ion source device and a vacuum chamber; the ion source device is placed in the vacuum chamber in a movable manner and performs free movement scanning in the vacuum chamber.

[0018] In one embodiment, an ion source installation port is disposed on the rear of the integrated housing of the radio frequency ion device, and a connecting line installation port is disposed on the vacuum chamber.

[0019] In one embodiment, sealing flanges are installed on both the ion source installation port and the connecting line installation port.

[0020] In one embodiment, the ion source installation port and the connecting line installation port are connected by a seamless pipe.

[0021] In one embodiment, the seamless tube is a flexible corrugated tube.

[0022] The above-mentioned movable RF scanning ion device is an ion source device based on a simplified RF network and an integrated design. It has the special effects of simple structure and easy mobility. Therefore, it is installed in a vacuum chamber for use, which is convenient for processing large workpieces. The ion source can be easily moved to realize mirror scanning processing, thereby improving the use effect of the RF scanning ion device.

[0023] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be understood through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0025] Figure 1 is a schematic diagram of the structure of an ion source device;

[0026] Figure 2 It is a schematic diagram of the integrated design structure of the ion source device;

[0027] Figure 3 It is a schematic diagram of the structure of an active radio frequency scanning ion device. DETAILED DESCRIPTION

[0028] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be interpreted as limiting the present application.

[0029] Those skilled in the art will appreciate that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, but does not exclude the presence or addition of one or more other features, integers, steps, operations.

[0030] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with those in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0031] Ion beam polishing is more suitable for the final stage of optical processing to achieve higher precision or final processing goals. In ion beam polishing, it can only be applied under vacuum conditions. For large workpieces, it is often necessary to move the ion source to achieve mirror scanning processing. Therefore, the ion source is required to meet the requirements of spatial movement. Moreover, for large lenses, the processing time may sometimes exceed dozens of hours, which greatly limits the process itself.

[0032] However, there are too many connections between the RF matching network and the RF ion source, and the structure is complicated. In order to better use the ion beam polishing method in optical processing, the present application provides an ion source device.

[0033] refer to Figure 1 As shown, the ion source device 1 provided in the present application includes: a radio frequency matching network 10 and a radio frequency ion source 20; wherein the radio frequency matching network 10 is a matching network with a Π-type structure.

[0034] The input end of the RF matching network 10 is connected to the RF source 30 , and the output end of the RF matching network 10 is connected to one end a of the RF coil 210 of the RF ion source 20 ;

[0035] The other end b of the RF coil 210 of the RF ion source 20 is grounded;

[0036] The RF matching network 10 is connected to the RF source 30 through the input end, and the RF source 30 is transmitted to the RF coil 210 of the RF ion source 20 through the output end. The RF coil 210 ionizes the gas entering the ionization chamber 230 through the gas pipeline 250 to generate ions, and generates an ion beam through the drive of the screen grid 240.

[0037] refer to Figure 1In the figure, the RF matching network 10 adopts a Π-type matching network, the RF matching network 10 is connected to the RF source 30 through the input end, and the output end has only one RF line (as shown by the bold black line in the figure) connected to one end of the RF coil 210 of the RF ion source 20, and the other end of the RF coil 210 of the RF ion source 20 (as shown by the bold black line in the figure) is grounded. As a result, the structure of the RF matching network 10 is simplified, which is convenient for mobile use.

[0038] In one embodiment, the RF matching network 10 includes an inductor L, a capacitor C load and capacitor C tune , where the inductor L is connected in series on the transmission line, the capacitor C load and capacitor C tune Connect the two ends of the inductor L and the ground respectively.

[0039] like Figure 1 As shown in , the RF matching network 10 adopts a Π-type structure, which reduces the structure of the matching network part, so that the matching network components occupy a smaller volume, thereby facilitating use in the vacuum chamber 2.

[0040] The technical solution of the present application is further described below in conjunction with the embodiments. Based on the solutions in the previous embodiments, the RF matching network 10 is simplified to facilitate the miniaturization of the ion source. For ease of application, the RF matching network 10 and the RF ion source 20 can be integrated into a design.

[0041] refer to Figure 2 As shown, in one embodiment, the RF matching network 10 and the RF ion source 20 are integrated, and the RF matching network 10 and the RF ion source 20 are connected in series and built into an integrated housing 40;

[0042] Among them, the front end of the RF ion source 20 is located at the front of the integrated housing 40; the gas pipeline 250 connected to the ionization chamber 230 extends to the rear of the integrated housing 40, and the driving power input port of the screen grid 240 and the RF source 30 input port of the matching network are arranged at the rear of the integrated housing 40.

[0043] In one embodiment, the capacitor C of the RF matching network 10 load and capacitor C tune The ground end of the radio frequency coil 210 is connected to the integrated housing 40, and the other end of the radio frequency coil 210 of the radio frequency ion source 20 is connected to the integrated housing 40. Further, the integrated housing 40 is of sealed design.

[0044] like Figure 2As shown in the figure, a cylindrical ion source device 1 can be designed, wherein the RF matching network 10 and the RF ion source 20 are connected in series and are jointly built into an integrated housing 40, and the gas pipeline 250 connected to the ionization chamber 230 extends all the way to the rear of the integrated housing 40; the driving power input port of the screen grid 240 and the RF source 30 input port of the matching network are both arranged at the rear of the integrated housing 40.

[0045] The following is an example of a movable radio frequency scanning ion device of the present application. In order to solve the problem that the ion source can only be fixedly installed and cannot realize spatial mobile scanning, the present application designs a movable radio frequency scanning ion device, and its technical solution is as follows:

[0046] refer to Figure 3 As shown, a movable radio frequency scanning ion device comprises: an ion source device 1 and a vacuum chamber 2; the ion source device 1 is movably placed in the vacuum chamber 2 and performs free movement scanning in the vacuum chamber 2.

[0047] As described above, the ion source device based on a simplified RF network and an integrated design has the special effects of simple structure and easy mobility. Therefore, it is installed in the vacuum chamber 2 for use, which is convenient for processing large workpieces. The ion source can be easily moved to realize mirror scanning processing, thereby improving the use effect of the RF scanning ion device.

[0048] In one embodiment, reference Figure 3 The integrated housing 40 of the radio frequency ion device is provided with an ion source installation port 101 at the rear, and the vacuum chamber 2 is provided with a connecting line installation port 201. Furthermore, a sealing flange port is installed on both the ion source installation port 101 and the connecting line installation port 201. Preferably, the ion source installation port 101 and the connecting line installation port 201 can be connected by a seamless pipe 50. Among them, the seamless pipe 50 can be a flexible bellows.

[0049] In the above scheme, the installation port of the ion source device 1 is directly installed at the bottom of the integrated housing 40, a connection sealing flange port is reserved on the vacuum chamber 2, and the vacuum chamber 2 and the ion source device 1 are connected through a flexible bellows. This simplifies the installation difficulty, eliminates unnecessary wires in the vacuum chamber, and facilitates mobile use.

[0050] Based on the solutions of the above embodiments, by designing a new type of RF ion source 20 device and using a matching network with a Π-type structure, the structure of the RF matching network 10 is greatly simplified, and the component size of the RF matching network 10 is reduced. At the same time, the ion source device 1 is integrated with the RF ion source 20 based on a small-sized video matching network. The ion source device 1 is installed as a whole in the vacuum chamber 2 for use, realizing the free movement function of the ion source space, which greatly improves the use effect of the equipment.

[0051] The above description is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. An ion source device, characterized in that: include: A radio frequency matching network and a radio frequency ion source; wherein the radio frequency matching network is a matching network with a π-type structure; The input end of the radio frequency matching network is connected to the radio frequency source, and the output end of the radio frequency matching network is connected to one end of the radio frequency coil of the radio frequency ion source through a radio frequency line; The other end of the radio frequency coil of the radio frequency ion source is grounded; The RF matching network is connected to a RF source through an input end, and the RF source is transmitted to a RF coil of a RF ion source through an output end. The RF coil ionizes the gas entering the ionization chamber through a gas pipeline to generate ions, and generates an ion beam through the driving of a screen grid; The radio frequency matching network and the radio frequency ion source are integrated into one design, and the radio frequency matching network and the radio frequency ion source are connected in series and built into an integrated housing; The RF matching network includes an inductor L and a capacitor C load and capacitor C tune , the capacitor C of the RF matching network load and capacitor C tune The ground end of the radio frequency ion source is connected to the integrated housing, and the other end of the radio frequency coil of the radio frequency ion source is connected to the integrated housing.

2. The ion source device according to claim 1, characterized in that: The front end of the radio frequency ion source is located at the front of the integrated housing; the gas pipeline connected to the ionization chamber extends to the rear of the integrated housing, and the driving power input port of the screen grid and the radio frequency source input port of the matching network are arranged at the rear of the integrated housing.

3. The ion source device according to claim 2, characterized in that: in, The inductor L is connected in series on the transmission line, and the capacitor C load and capacitor C tune Connect the two ends of the inductor L and the ground respectively.

4. The ion source device according to claim 2 or 3, characterized in that: The integrated housing is of sealed design.

5. A movable radio frequency scanning ion device, characterized in that: include: The ion source device and vacuum chamber according to any one of claims 1 to 4; the ion source device is placed in the vacuum chamber in a movable manner and performs free movement scanning in the vacuum chamber.

6. The movable radio frequency scanning ion device according to claim 5, characterized in that: An ion source installation port is arranged at the rear of the integrated housing where the radio frequency ion source is located, and a connecting line installation port is arranged on the vacuum chamber.

7. The movable radio frequency scanning ion device according to claim 6, characterized in that: The ion source installation port and the connecting line installation port are both installed with sealing flange ports.

8. The movable radio frequency scanning ion device according to claim 7, characterized in that: The ion source installation port and the connecting line installation port are connected through a seamless pipe.

9. The movable radio frequency scanning ion device according to claim 8, characterized in that: The seamless pipe is a flexible corrugated pipe.

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