Light emitting element unit

Abstract

A light-emitting element unit is configured by three light-emitting elements. In a first light-emitting element (10a), a 1a electrode (21a), a first organic layer (23a) including a first light-emitting layer, a 2a electrode (22a), a second organic layer (23b) including a second light-emitting layer, and a third organic layer (23c) including a third light-emitting layer are laminated. In a second light-emitting element (10b), a first organic layer (23a), a 1b electrode (21b), a second organic layer (23b), a 2b electrode (22b), and a third organic layer (23c) are laminated. In a third light-emitting element (10c), a first organic layer (23a), a second organic layer (23b), a 1c electrode (21c), a third organic layer (23c), and a 2c electrode (22c) are laminated.

Description

Technical Field

[0001] The present invention relates to a light emitting element unit. Background Art

[0002] In recent years, organic EL display devices that use the organic electroluminescence phenomenon (organic EL phenomenon) to display images have been applied not only in direct-view displays such as monitor devices, but also in ultra-small displays (micro displays) that require a pixel pitch of several microns. In addition, in organic EL display devices, there is a strong demand for the development of technology for efficiently extracting light. This is because when the light extraction efficiency is low, the actual emission amount in the organic EL element is not effectively utilized, which causes a large loss in power consumption and the like.

[0003] In a conventional direct-view organic EL display device, a red light emitting element, a green light emitting element, and a blue light emitting element are usually manufactured by a mask vapor deposition process. That is, an RGB color separation structure is realized. However, due to the accuracy of mask alignment, etc., it is difficult to adopt an RGB color separation structure in an organic EL display device with a fine pixel pitch. Therefore, a "white method" structure is adopted, in which three light-emitting layers of a red light emitting layer, a green light emitting layer, and a blue light emitting layer are laminated on all pixels, and white light is emitted from each light-emitting element. Each light-emitting element includes a color filter. In addition, by passing the white light emitted from the light-emitting element through the color filter, red light, green light, or blue light is obtained.

[0004] Reference List

[0005] Patent Literature

[0006] Patent document 1: Japanese Patent Application Publication No. 2006-278257. Summary of the invention

[0007] Problems to be solved by the present invention

[0008] However, in the white method, the white light emitted from the light emitting element is color-separated by a color filter. Therefore, the light absorption (loss) in the color filter is large, and the luminous efficiency is disadvantageously less than 1 / 3 of the luminous efficiency of the RGB color separation method. In view of this shortcoming, a reflective film is formed on the light emitting element, and a microcavity (resonator structure) is formed between the transparent electrode and the reflective film arranged in the light emitting element. In addition, for example, from Japanese Patent Application Publication No. 2006-278257, it is known that in a light emitting element having three layers of a red light emitting layer, a green light emitting layer and a blue light emitting layer, a technology for setting a red light emitting element that selectively emits red light by optimizing a microcavity for red light emission is provided. Similarly, a green light emitting element that selectively emits green light is provided by optimizing a microcavity for green light emission, and a blue light emitting element that selectively emits blue light is provided by optimizing a microcavity for blue light emission. However, in this technology, although the light extraction efficiency is improved, the luminous efficiency and color purity are lower than those in the RGB color separation method.

[0009] Therefore, an object of the present disclosure is to provide a light emitting element unit having a configuration and a structure capable of achieving high light emitting efficiency and color purity.

[0010] Solution to the problem

[0011] According to the first aspect of the present disclosure, a light emitting element unit for achieving the above-mentioned object includes three light emitting elements, wherein:

[0012] The first light-emitting element is obtained by laminating the first electrode 1a, the first organic layer including the first light-emitting layer, the second electrode 2a, the second organic layer including the second light-emitting layer, and the third organic layer including the third light-emitting layer,

[0013] a second light emitting element obtained by laminating a first organic layer, a 1b electrode, a second organic layer, a 2b electrode, and a third organic layer, and

[0014] The third light-emitting element is obtained by laminating the first organic layer, the second organic layer, the 1c electrode, the third organic layer, and the 2c electrode.

[0015] According to a second aspect of the present disclosure, a light emitting element unit for achieving the above-mentioned purpose includes three light emitting elements, wherein:

[0016] A first light-emitting element and a second light-emitting element are juxtaposed, the first light-emitting element comprising a 1a-th electrode, a first organic layer comprising a first light-emitting layer, and a 2a-th electrode, and the second light-emitting element comprising a 1b-th electrode, a first organic layer, and a 2b-th electrode,

[0017] a third light-emitting element obtained by laminating a first organic layer, a 1c electrode, a third organic layer including a third light-emitting layer, and a 2c electrode,

[0018] The first color filter is disposed on the light emitting side of the first light emitting element, and

[0019] The second color filter is provided on the light emitting side of the second light emitting element.

[0020] According to a third aspect of the present disclosure, a light emitting element unit for achieving the above-mentioned purpose includes three light emitting elements, wherein:

[0021] The first light-emitting element is obtained by laminating the first electrode 1a, the first organic layer including the first light-emitting layer, and the second electrode 2a,

[0022] a second light-emitting element obtained by laminating a first organic layer, a 1b electrode, a second organic layer including a second light-emitting layer, and a 2b electrode, and

[0023] The third light-emitting element is obtained by laminating a first organic layer, a second organic layer, a 1c electrode, a third organic layer including a third light-emitting layer, and a 2c electrode.

[0024] According to a fourth aspect of the present disclosure, a light emitting element unit for achieving the above-mentioned purpose includes:

[0025] A plurality of light emitting elements having a laminated structure obtained by laminating a plurality of organic layers, each organic layer including a light emitting layer, wherein

[0026] Each light emitting element includes a first electrode, any one of a plurality of organic layers, and a second electrode, and

[0027] The first electrodes constituting the respective light emitting elements do not overlap with each other between the light emitting elements. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1A and Figure 1B is a conceptual diagram of a light emitting element unit of Example 1.

[0029] Figure 2A and Figure 2B These are conceptual diagrams of a modification (1) and a modification (2) of the light emitting element unit of Example 1, respectively.

[0030] Figure 3A and Figure 3B They are conceptual diagrams of the light emitting element unit of Example 2 and its modification (1), respectively.

[0031] Figure 4A , Figure 4B and Figure 4C These are conceptual diagrams of Modification (2), Modification (3), and Modification (4) of the light emitting element unit of Example 2, respectively.

[0032] Figure 5A and Figure 5B They are conceptual diagrams of the light emitting element unit of Example 3 and its modification (1), respectively.

[0033] Fig. 6A and Figure 6B These are conceptual diagrams of Modification (2) and Modification (3) of the light emitting element unit of Example 3, respectively.

[0034] Figure 7 is a conceptual diagram of a modification (4) of the light emitting element unit of Example 3.

[0035] Figure 8 is a schematic partial cross-sectional view of a light emitting element unit of Example 1.

[0036] Fig. 9 is a schematic partial cross-sectional view of a modification (1) of the light emitting element unit of Example 1.

[0037] Fig. 10A , Fig. 10B , Fig. 10C and Fig. 10D 1 is a diagram for explaining an arrangement state of a first electrode and a contact hole portion in a light emitting element unit of Example 1.

[0038] Fig.11 is a schematic partial cross-sectional view of a light emitting element unit of Example 2.

[0039] Fig.12 is a schematic partial cross-sectional view of a modification (1) of the light emitting element unit of Example 2.

[0040] Fig.13 is a schematic partial cross-sectional view of a modification (2) of the light emitting element unit of Example 2.

[0041] Fig.14 is a schematic partial cross-sectional view of a modification (3) of the light emitting element unit of Example 2.

[0042] Fig.15 is a schematic partial cross-sectional view of a light emitting element unit of Example 3.

[0043] Fig.16 is a schematic partial cross-sectional view of a modification (1) of the light emitting element unit of Example 3.

[0044] Fig.17 is a schematic partial cross-sectional view of a modification (2) of the light emitting element unit of Example 3.

[0045] Fig.18 is a schematic partial cross-sectional view of a modification (3) of the light emitting element unit of Example 3.

[0046] Fig.19Aand Fig.19B 1 is a schematic end view of a first substrate and the like for explaining a method of manufacturing a light emitting element unit of Example 1.

[0047] Fig. 20A and Fig. 20B yes Fig.19B The following is a schematic end view of a first substrate and the like for explaining a method of manufacturing a light emitting element unit of Example 1.

[0048] Fig.21 yes Fig. 20B The following is a schematic end view of a first substrate and the like for explaining a method of manufacturing a light emitting element unit of Example 1.

[0049] Fig. 22 yes Fig.21 The following is a schematic end view of a first substrate and the like for explaining a method of manufacturing a light emitting element unit of Example 1.

[0050] Fig.23 yes Fig. 22 The following is a schematic end view of a first substrate and the like for explaining a method of manufacturing a light emitting element unit of Example 1.

[0051] Fig.24 yes Fig.23 The following is a schematic end view of a first substrate and the like for explaining a method of manufacturing a light emitting element unit of Example 1.

[0052] Fig.25 yes Fig.24 The following is a schematic end view of a first substrate and the like for explaining a method of manufacturing a light emitting element unit of Example 1.

[0053] Fig.26 yes Fig.25 The following is a schematic end view of a first substrate and the like for explaining a method of manufacturing a light emitting element unit of Example 1.

[0054] Fig.27A and Fig.27B An example in which the display device in the present disclosure is applied to a lens-interchangeable single-lens reflex-type digital camera is shown. Fig.27A shows a front view of a digital camera, and Fig.27B A rear view thereof is shown.

[0055] Fig.28 is an external view of a head-mounted display showing an example in which the display device in the present disclosure is applied to the head-mounted display. DETAILED DESCRIPTION

[0056] Hereinafter, the present disclosure will be described based on examples with reference to the accompanying drawings. However, the present disclosure is not limited to these examples, and various numerical values ​​and materials in the examples are illustrative. Note that the description will be made in the following order.

[0057] 1. General description of the light emitting element unit according to the first to fourth aspects of the present disclosure

[0058] 2. Example 1 (Light-emitting element unit according to the first aspect and the fourth aspect of the present disclosure)

[0059] 3. Example 2 (Light-emitting element unit according to the second aspect and the fourth aspect of the present disclosure)

[0060] 4. Example 3 (Light-emitting element unit according to the third aspect and the fourth aspect of the present disclosure)

[0061] 5. Others

[0062] <Overall Description of Light-Emitting Element Units According to the First to Fourth Aspects of the Present Disclosure>

[0063] The light emitting element unit according to the first aspect of the present disclosure may adopt a form in which the 2a electrode, the 2b electrode, and the 2c electrode are all constituted by a common second electrode.

[0064] The light emitting element unit according to the first aspect of the present disclosure including the above-mentioned preferred forms may adopt a form in which the same potential is applied to the 2a electrode, the 2b electrode, and the 2c electrode.

[0065] The light-emitting element unit according to the first aspect of the present disclosure including the above-mentioned various preferred forms can be in the form of a laminated structure in which, for example, the 2a electrode, the 2b electrode, and the 2c electrode all have a transparent conductive layer and a semi-transmissive conductive layer. Note that the transparent conductive layer can be used as an upper layer (i.e., it can be located on the second substrate side), and the semi-transmissive conductive layer can be used as a lower layer (i.e., it can be located on the first substrate side). Alternatively, the transparent conductive layer can be used as a lower layer, and the semi-transmissive conductive layer can be used as an upper layer. In addition, in this case, for example, a form can be adopted in which the transparent conductive layer contains an oxide of indium and zinc (IZO), and the semi-transmissive conductive layer contains an alloy of magnesium (Mg) and silver (Ag). In addition, the semi-transmissive conductive layer can have a laminated structure. In this case, the upper layer (the layer located on the second substrate side) can contain an alloy of magnesium (Mg) and silver (Ag), and the lower layer (the layer located on the first substrate side) can contain calcium (Ca). The same applies to the 2a electrode, the 2b electrode, and the 2c electrode in the light-emitting element unit according to the third aspect of the present disclosure, and the second electrode in the light-emitting element unit according to the fourth aspect of the present disclosure. In addition, the 2a electrode and the 2b electrode in the light-emitting element unit according to the second aspect of the present disclosure may have a laminated structure of a transparent conductive layer and a semi-transmissive conductive layer in a manner similar to the above case. In addition, in some cases, the semi-transmissive conductive layer may have a laminated structure. In addition, the 2c electrode may be a semi-transmissive conductive layer, specifically, a semi-transmissive conductive layer containing magnesium (Mg) and silver (Ag). That is, in the light-emitting element unit according to the second aspect of the present disclosure, the material constituting the second electrode of the light-emitting element can be changed according to the light-emitting element, and the structure of the 2a electrode and the 2b electrode may be different from the structure of the 2c electrode.

[0066] In addition, the light emitting element unit according to the first aspect of the present disclosure including the above-mentioned various preferred forms may take the following forms, wherein

[0067] In the first light-emitting element, light emitted in the first light-emitting layer resonates between the 1a interface consisting of the interface between the 1a electrode and the first organic layer or the first light-reflecting layer and the 2a interface consisting of the interface between the 2a electrode and the first organic layer, and a part of the resonant light is emitted from the 2a electrode.

[0068] In the second light-emitting element, light emitted in the second light-emitting layer resonates between the 1b interface consisting of the interface between the 1b electrode and the second organic layer or the second light-reflecting layer and the 2b interface consisting of the interface between the 2b electrode and the second organic layer, and a part of the resonant light is emitted from the 2b electrode, and

[0069] In the third light-emitting element, light emitted in the third light-emitting layer resonates between the 1c interface formed by the interface between the 1c electrode and the third organic layer or the third light-reflecting layer and the 2c interface formed by the interface between the 2c electrode and the third organic layer, and a part of the resonant light is emitted from the 2c electrode. That is, each light-emitting element preferably has a resonator structure.

[0070] The same applies to the third light-emitting element in the light-emitting element unit according to the second aspect of the present disclosure, or the light-emitting element unit according to the third aspect of the present disclosure. The light-emitting element unit according to the fourth aspect of the present disclosure may take a form in which light emitted in the light-emitting layer resonates between a first interface consisting of an interface between the first electrode and the organic layer or a light-reflecting layer and a second interface consisting of an interface between the second electrode and the organic layer, and a portion of the resonant light is emitted from the second electrode.

[0071] In addition, in this case, specifically,

[0072] It can take the following forms, where

[0073] When the distance from the maximum emission position of the first light-emitting layer to the 1a interface is L 1A Indicated by OL, its optical distance 1A The distance from the maximum emission position of the first light-emitting layer to the 2a interface is represented by L 2A Indicated by OL, its optical distance 2A Indicates that, and m 1A and m 2A When it represents an integer, it satisfies the following formulas (A-1), (A-2), (A-3), and (A-4),

[0074] When the distance from the maximum emission position of the second light-emitting layer to the 1b interface is L 1B Indicated by OL, its optical distance 1B The distance from the maximum emission position of the second light-emitting layer to the 2b interface is represented by L 2B Indicated by OL, its optical distance 2B Indicates that, and m 1B and m 2B When it represents an integer, it satisfies the following formulas (B-1), (B-2), (B-3), and (B-4), and

[0075] When the distance from the maximum emission position of the third light-emitting layer to the 1c interface is L 1C Indicated by OL, its optical distance 1C The distance from the maximum emission position of the third light-emitting layer to the 2c interface is represented by L 2C Indicated by OL, its optical distance 2C Indicates that, and m1C and m 2C When representing an integer, the following formulas (C-1), (C-2), (C-3), and (C-4) are satisfied.

[0076] 0.7{-Φ 1A / (2π)+m 1A}≤2×OL 1A / λ A ≤1.2{-Φ 1A / (2π)+m 1A}(A-1)

[0077] 0.7{-Φ 2A / (2π)+m 2A}≤2×OL 2A / λ A ≤1.2{-Φ 2A / (2π)+m 2A}(A-2)

[0078] L 1A <L 2A (A-3)

[0079] m 1A <m 2A (A-4)

[0080] 0.7{-Φ 1B / (2π)+m 1B}≤2×OL 1B / λ B ≤1.2{-Φ 1B / (2π)+m 1B}(B-1)

[0081] 0.7{-Φ 2B / (2π)+m 2B}≤2×OL 2B / λ B ≤1.2{-Φ 2B / (2π)+m 2B}(B-2)

[0082] L 1B <L 2B (B-3)

[0083] m 1B <m 2B (B-4)

[0084] 0.7{-Φ 1C / (2π)+m 1C}≤2×OL 1C / λ C ≤1.2{-Φ1C / (2π)+m 1C}(C-1)

[0085] 0.7{-Φ 2C / (2π)+m 2C}≤2×OL 2C / λ C ≤1.2{-Φ 2C / (2π)+m 2C (C-2)

[0086] L 1C <L 2C (C-3)

[0087] m 1C <m 2C (C-4)

[0088] here,

[0089] λ A : Maximum peak wavelength of the spectrum of light generated in the first light-emitting layer (or the desired wavelength of light generated in the first light-emitting layer)

[0090] Φ 1A : Phase shift of light reflected from the 1a interface (unit: radian)

[0091] Assume that -2π<Φ 1A ≤0.

[0092] Φ 2A : Phase shift of light reflected from the 2a interface (unit: radian)

[0093] Assume that -2π<Φ 2A ≤0.

[0094] λ B : Maximum peak wavelength of the spectrum of light generated in the second light-emitting layer (or desired wavelength of light generated in the second light-emitting layer)

[0095] Φ 1B : Phase shift of light reflected from the 1b interface (unit: radian)

[0096] Assume that -2π<Φ 1B ≤0.

[0097] Φ 2B : Phase shift of light reflected from the 2b interface (unit: radian)

[0098] Assume that -2π<Φ 2B ≤0.

[0099] λ C: Maximum peak wavelength of the spectrum of light generated in the third light-emitting layer (or desired wavelength of light generated in the third light-emitting layer)

[0100] Φ 1C : Phase shift of light reflected from the 1c interface (unit: radian)

[0101] Assume that -2π<Φ 1C ≤0.

[0102] Φ 2C : Phase shift of light reflected from the 2c interface (unit: radian)

[0103] Assume that -2π<Φ 2C ≤0.

[0104] Furthermore, in this case, it is preferable to satisfy m 1A =0,m 2A =1,m 1B =0,m 2B =1,m 1C = 0, and m 2C =1.

[0105] Generally, at a reflection interface composed of layer α and layer β both containing transparent materials, part of the incident light passes through the reflection interface, while the rest is reflected by the reflection interface. Therefore, a phase change (phase shift) occurs in the reflected light. The complex refractive index (n) of layer α can be measured. A , k A ) and the complex refractive index of layer β (n B , k B ), and based on these values, a calculation is performed to determine the phase change of light when light is reflected by the reflective interface formed by layer α and layer β (See, for example, Principles of Optics, Max Born and Emil Wolf, 1974 (PERGAMON PRESS)) The refractive index of the light-emitting layer or the organic layer can be measured using a spectroscopic ellipsometry measuring device.

[0106] The distance L1 from the maximum emission position of the light-emitting layer to the first interface refers to the actual distance (physical distance) from the maximum emission position of the light-emitting layer to the first interface, and the distance L2 from the maximum emission position of the light-emitting layer to the second interface refers to the actual distance (physical distance) from the maximum emission position of the light-emitting layer to the second interface. In addition, the optical distance is also called the optical path length, and when the light passes through a medium with a refractive index of n for a distance L, the optical distance is generally referred to as n×L. The same applies to the following description. Therefore, if the average refractive index is given by n ave, then the following relationship is satisfied.

[0107] OL1=L1×n ave

[0108] OL2=L2×n ave

[0109] Here, the average refractive index n is obtained by adding the product of the refractive index and the thickness of each layer constituting the organic layer (or the organic layer and the interlayer insulating layer) and dividing the resulting sum by the thickness of the organic layer (or the organic layer and the interlayer insulating layer). ave .

[0110] The light emitting element unit according to the second aspect of the present disclosure may adopt a form in which the same potential is applied to the 2a electrode and the 2b electrode, and further, may adopt a form in which the same potential is applied to the 2a electrode, the 2b electrode, and the 2c electrode.

[0111] In the first light-emitting element and the second light-emitting element in the light-emitting element unit according to the second aspect of the present disclosure, the third organic layer may be formed on (or over) the 2a-th electrode and the 2b-th electrode.

[0112] In the first light-emitting element in the light-emitting element unit according to the third aspect of the present disclosure, the second organic layer may be formed on (or over) the 2a-th electrode.

[0113] The light-emitting element units according to the first to fourth aspects of the present disclosure including the above-mentioned various preferred forms may be collectively referred to as "the light-emitting element unit, etc. of the present disclosure". For convenience, the light-emitting elements constituting the light-emitting element unit, etc. of the present disclosure may be referred to as "the light-emitting elements, etc. of the present disclosure".

[0114] In the light-emitting element unit of the present disclosure, in a form in which one pixel (or sub-pixel) is composed of one light-emitting element, examples of the arrangement of pixels (or sub-pixels) include, but are not limited to, stripe arrangement, diagonal arrangement, triangle arrangement, and rectangular arrangement. In addition, in a form in which one pixel (or sub-pixel) is composed of a plurality of light-emitting elements, examples of the arrangement of pixels (or sub-pixels) include, but are not limited to, stripe arrangement.

[0115] The red organic EL light emitting element has a structure obtained by laminating a hole injection layer, a hole transport layer, a red light emitting layer, and an electron transport layer in sequence from the first electrode side. In the red light emitting layer, by applying an electric field to the red light emitting layer, some holes injected from the first electrode through the hole injection layer and the hole transport layer are recombined with some electrons injected from the second electrode through the electron transport layer to generate red light. The red light emitting layer contains, for example, a red light emitting material, a hole transport material, an electron transport material, and at least one of the two charge transport materials. The red light emitting material can be a fluorescent material or a phosphorescent material. For example, the red light emitting layer generates red light using the organic EL phenomenon, and is formed, for example, by mixing 30% by mass of 2,6-bis[(4′-methoxydiphenylamino)phenylvinyl]-1,5-dicyanonaphthalene (BSN) with 4,4-bis(2,2-diphenylvinyl)biphenyl (DPVBi).

[0116] The green organic EL light-emitting element has a structure obtained by laminating a hole injection layer, a hole transport layer, a green light emitting layer, and an electron transport layer in sequence from the first electrode side. In the green light emitting layer, by applying an electric field to the green light emitting layer, some holes injected from the first electrode through the hole injection layer, the hole transport layer, and the emission separation layer are recombined with some electrons injected from the second electrode through the electron transport layer to generate green light. The green light emitting layer contains, for example, a green light emitting material, a hole transport material, an electron transport material, and at least one of the two charge transport materials. The green light emitting material can be a fluorescent material or a phosphorescent material. For example, the green light emitting layer generates green light using the organic EL phenomenon, and is formed, for example, by mixing 5% by mass of coumarin 6 with DPVBi.

[0117] The blue organic EL light emitting element has a structure obtained by laminating a hole injection layer, a hole transport layer, a blue light emitting layer, and an electron transport layer in sequence from the first electrode side. In the blue light emitting layer, by applying an electric field to the blue light emitting layer, some holes injected from the first electrode through the hole injection layer, the hole transport layer, and the emission separation layer are recombined with some electrons injected from the second electrode through the electron transport layer to generate blue light. The blue light emitting layer contains, for example, a blue light emitting material, a hole transport material, an electron transport material, and at least one of the two charge transport materials. The blue light emitting material can be a fluorescent material or a phosphorescent material. For example, the blue light emitting layer generates blue light using the organic EL phenomenon, and is formed, for example, by mixing 2.5% by mass of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi) with DPVBi.

[0118] The hole injection layer injects holes into the hole transport layer and includes, for example, a hexaazatriphenylene (HAT) derivative. The hole transport layer transports holes injected from the hole injection layer to the light emitting layer and includes, for example, 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA) or α-naphthylphenyldiamine (αNPD).

[0119] The electron transport layer transports electrons to the light emitting layer and includes, for example, 8-hydroxyquinoline aluminum (Alq3), BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), and butylphenanthroline (BPhen). The electron transport layer includes at least one layer and may include an electron transport layer doped with an alkali metal or an alkaline earth metal. In the electron transport layer doped with an alkali metal or an alkaline earth metal, examples of the main material include BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq3, and butylphenanthroline (BPhen), and examples of the dopant material include alkali metals such as lithium (Li), sodium (Na), potassium (K), rubidium (Rb) or cesium (Cs), and alkaline earth metals such as magnesium (Mg), calcium (Ca), strontium (Sr) or barium (Ba). In addition, for example, by co-depositing the main material and the dopant material, an electron transport layer doped with 0.5% by mass to 15% by mass of the dopant material can be obtained.

[0120] The electron injection layer may be provided between the electron transport layer and the second electrode. The electron injection layer is provided in order to enhance the injection of electrons from the cathode electrode, and contains, for example, lithium fluoride (LiF).

[0121] However, the materials constituting the layers are illustrative and are not limited to these materials. In addition, for example, the light-emitting layer may be composed of a blue light-emitting layer and a yellow light-emitting layer, or may be composed of a blue light-emitting layer and an orange light-emitting layer. The thickness of the hole injection layer may be 1 nm to 20 nm, the thickness of the hole transport layer may be 10 nm to 200 nm, the thickness of the light-emitting layer may be 5 nm to 50 nm, and the thickness of the electron transport layer may be 10 nm to 200 nm.

[0122] In the light-emitting element unit according to the first aspect or the third aspect of the present disclosure, the first light-emitting element may be composed of a red light-emitting element (red organic EL light-emitting element), the second light-emitting element may be composed of a green light-emitting element (green organic EL light-emitting element), and the third light-emitting element may be composed of a blue light-emitting element (blue organic EL light-emitting element). In the light-emitting element unit according to the second aspect of the present disclosure, both the first light-emitting element and the second light-emitting element may be composed of a yellow light-emitting element (yellow organic EL light-emitting element), or may be composed of an orange light-emitting element (orange organic EL light-emitting element). In addition, in this case, the first color filter only needs to be a color filter that selectively transmits red, and the second color filter only needs to be a color filter that selectively transmits green. In addition, the third light-emitting element only needs to be composed of a blue light-emitting element (blue organic EL light-emitting element).

[0123] In the case where the first electrode is used as an anode electrode in the light-emitting element of the present disclosure, etc., examples of the material (light-reflecting material) constituting the first electrode include metals having a high work function, such as platinum (Pt), gold (Au), silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co) or tantalum (Ta), and alloys thereof (for example, Ag-Pd-Cu alloy or Al-Nd alloy containing silver as a main component and 0.3% to 1% by mass of palladium (Pd) and 0.3% to 1% by mass of copper (Cu)). In addition, in the case of using a conductive material having a small work function value and high light reflectivity (such as aluminum (Al) or an alloy containing aluminum), the first electrode can be used as an anode electrode by, for example, providing an appropriate hole injection layer to improve the hole injection property. For example, the thickness of the first electrode can be 0.1 μm to 1 μm. Alternatively, the first electrode may have a structure obtained by laminating a transparent conductive material having excellent hole injection properties (such as indium and tin oxide (ITO) or indium and zinc oxide (IZO)) on a dielectric multilayer film including aluminum (Al) or the like or a reflective film having high light reflectivity. Meanwhile, in the case where the first electrode is used as a cathode electrode, it is desirable that the first electrode is composed of a conductive material having a small work function value and high light reflectivity. However, by improving the electron injection properties, for example, by providing an appropriate electron injection layer in a conductive material having high light reflectivity used as an anode electrode, the first electrode can also be used as a cathode electrode.

[0124] Meanwhile, in the case where the second electrode is used as a cathode electrode, the material constituting the second electrode (semi-transmissive material or transmissive material) is desirably composed of a conductive material having a small work function value so as to be able to effectively transmit the emitted light and inject electrons into the light-emitting layer. Examples of materials constituting the second electrode include metals or alloys thereof having a small work function, such as aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), sodium (Na), strontium (Sr), alkali metals or alkaline earth metals and silver (Ag) [for example, alloys of magnesium (Mg) and silver (Ag) (Mg-Ag alloy)], alloys of magnesium and calcium (Mg-Ca alloy), or alloys of aluminum (Al) and lithium (Li) (Al-Li alloy). Among these materials, Mg-Ag alloy is preferred, and, for example, the volume ratio between magnesium and silver may be Mg:Ag=2:1 to 30:1. Alternatively, for example, as the volume ratio between magnesium and calcium, it may be Mg:Ca=2:1 to 10:1. In addition, the second electrode may have a laminated structure of layers composed of these materials (lower layer: calcium (Ca), barium (Ba), lithium (Li), cesium (Cs), indium (In), magnesium (Mg) or silver (Ag) / upper layer: magnesium (Mg), silver (Ag) or an alloy thereof). The thickness of the second electrode may be, for example, 3 nm to 50 nm, preferably 4 nm to 20 nm, and more preferably 6 nm to 12 nm. Alternatively, the second electrode may have a layer composed of the above-mentioned material layer and a so-called transparent electrode (for example, a layer having a thickness of 3×10 -8 m to 1×10 -6 In the embodiment of the present invention, the second electrode has a laminated structure composed of a transparent electrode such as ITO or IZO. In the case where the second electrode has a laminated structure, the thickness of the material layer can be reduced to 1nm to 4nm. In addition, the second electrode can be composed of only a transparent electrode. At the same time, in the case where the second electrode is used as an anode electrode, it is desirable that the second electrode is composed of a conductive material that transmits the emitted light and has a large work function value.

[0125] In addition, a bus electrode (auxiliary electrode) containing a low resistance material such as aluminum, aluminum alloy, silver, silver alloy, copper, copper alloy, gold or gold alloy may be provided in the second electrode to reduce the resistance of the entire second electrode.

[0126] Examples of methods for forming the first electrode or the second electrode include: vapor deposition methods including electron beam vapor deposition, hot wire vapor deposition, and vacuum vapor deposition, sputtering, chemical vapor deposition (CVD), MOCVD, and a combination of ion plating and etching; various printing methods such as screen printing, inkjet printing, and metal mask printing; plating (electroplating or chemical plating); lift-off; laser ablation; and a combination of sol-gel methods. According to various printing methods and plating methods, a first electrode or a second electrode having a desired shape (pattern) can be directly formed. Note that in the case of forming the first electrode or the second electrode after forming the organic layer, from the viewpoint of preventing the organic layer from being damaged, it is preferred to form the first electrode or the second electrode specifically based on a film forming method (such as a vacuum vapor deposition method) in which the film forming particles have small energy, or a film forming method such as an MOCVD method. When the organic layer is damaged, a non-luminous pixel (or non-luminous sub-pixel) called a "dark spot" may be generated due to the generation of leakage current. Furthermore, from the viewpoint of preventing degradation of the organic layer due to moisture in the atmosphere, it is preferred to perform the processes from the formation of the organic layer to the formation of these electrodes without exposing them to the atmosphere. The second electrode does not have to be patterned.

[0127] Examples of materials constituting the light reflecting layer include aluminum, aluminum alloys (e.g., Al-Nd or Al-Cu), Al / Ti laminated structures, Al-Cu / Ti laminated structures, chromium (Cr), silver (Ag), silver alloys (e.g., Ag-Pd-Cu or Ag-Sm-Cu), platinum (Pt), gold (Au), and tungsten (W). The light reflecting layer can be formed, for example, by vapor deposition methods including electron beam vapor deposition, hot wire vapor deposition, and vacuum vapor deposition, sputtering, CVD, and ion plating; plating methods (electroplating or chemical plating); lift-off methods; laser ablation methods; sol-gel methods; and the like.

[0128] The organic layer includes, for example, a light-emitting layer containing an organic light-emitting material. Specifically, as described above, for example, the organic layer may be composed of a laminated structure of a hole transport layer, a light-emitting layer, and an electron transport layer; a laminated structure of a hole transport layer and a light-emitting layer also used as an electron transport layer; a laminated structure of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. Examples of methods for forming a light-emitting layer or an organic layer include: a physical vapor deposition method (PVD method), such as a vacuum vapor deposition method; a printing method, such as a screen printing method or an inkjet printing method; a laser transfer method, by irradiating a laser absorption layer and an organic layer laminated structure formed on a transfer substrate with a laser to separate the organic layer on the laser absorption layer, and transfer the organic layer; and various coating methods. If necessary, a light-emitting layer or an organic layer can be formed on the entire surface without patterning.

[0129] In the light-emitting element unit of the present disclosure, a plurality of light-emitting elements are formed on a first substrate. Here, examples of the first substrate or the second substrate include a high strain point glass substrate, a sodium glass (Na2O·CaO·SiO2) substrate, a borosilicate glass (Na2O·B2O3·SiO2) substrate, a forsterite (2MgO·SiO2) substrate, a lead glass (Na2O·PbO·SiO2) substrate, an alkali-free glass, various glass substrates each having an insulating film formed on its surface, a quartz substrate, a quartz substrate having an insulating film formed on its surface, a silicon substrate having an insulating film formed on its surface, and an organic polymer (such as polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyether sulfone (PES), polyimide, polycarbonate or polyethylene terephthalate (PET) (having a polymer material such as a plastic film, a plastic sheet or a plastic substrate composed of a polymer material, and having flexibility)). The materials constituting the first substrate and the second substrate may be the same or different from each other. However, in the case of a top emission type where light is emitted through a second substrate, the second substrate is required to be transparent to light emitted from the light emitting element. In the case of a bottom emission type where light is emitted through a first substrate, the first substrate is required to be transparent to light emitted from the light emitting element.

[0130] In the light-emitting element unit according to the second aspect of the present disclosure, the color filter may be arranged on the second substrate side or the first substrate side. The color filter arranged on the first substrate side is also referred to as an on-chip color filter (OCCF). The color filter only needs to be composed of known materials. Specifically, the color filter is composed of a resin to which a colorant containing a desired pigment or dye is added. By selecting the pigment or dye, adjustment is performed so that the transmittance within the target color wavelength range is high and the transmittance within another wavelength range is low. The light-shielding layer may be arranged on the second substrate side or the first substrate side. Specific examples of light-shielding materials constituting the light-shielding layer include materials such as titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), aluminum (Al) or MoSi2 that can shield light. The light-shielding layer may be formed by a vapor deposition method including an electron beam vapor deposition method, a hot wire vapor deposition method, and a vacuum vapor deposition method, a sputtering method, a CVD method, an ion plating method, etc. The black matrix layer may be arranged on the second substrate side or the first substrate side. For example, the black matrix layer is composed of a black resin film (specifically, for example, a black polyimide-based resin) having an optical density of 1 or more mixed with a black colorant or a thin film filter using interference of thin films. For example, the thin film filter is formed by laminating two or more thin films containing metal, metal nitride or metal oxide, and attenuates light by using interference of thin films. Specific examples of thin film filters include thin film filters obtained by alternately laminating Cr and chromium (III) oxide (Cr2O3).

[0131] In the top emission type, the first electrode is disposed on, for example, an interlayer insulating layer, or disposed above the interlayer insulating layer. The interlayer insulating layer is disposed between the first light emitting element and the second light emitting element, and between the second light emitting element and the third light emitting element. The light emitting element driving unit formed on the first substrate is covered by the insulating layer, and the interlayer insulating layer is formed on the insulating layer.

[0132] The light emitting element driving unit is composed of more than one thin film transistor (TFT). The TFT is electrically connected to the first electrode through a contact plug arranged in the interlayer insulating layer. The gate electrode may include a metal such as aluminum (Al) or polycrystalline silicon. The gate insulating film is arranged on the entire surface of the first substrate so as to cover the gate electrode. The gate insulating film may include, for example, silicon oxide (SiO2) or silicon nitride (SiN). The semiconductor layer includes, for example, amorphous silicon, polycrystalline silicon or an oxide semiconductor, and only needs to be formed on the gate insulating film. The source / drain region is composed of a partial region of the semiconductor layer. The region of the semiconductor layer between the drain region and the source region and above the gate electrode corresponds to the channel formation region. Therefore, the bottom gate thin film transistor is arranged on the first substrate. However, the light emitting element driving unit is not limited to a bottom gate thin film transistor, and may be a top gate thin film transistor.

[0133] Examples of materials constituting the interlayer insulating layer, insulating layer or insulating film include SiOx-based materials (materials constituting silicon-based oxide films) such as SiO2, non-doped silicate glass (NSG), borophosphosilicate glass (BPSG), PSG, BSG, AsSG, SbSG, PbSG, spin-on glass (SOG), low-temperature oxide (LTO, low-temperature CVD-SiO2), low-melting-point glass or glass paste; SiN-based materials including SiON-based materials; SiOC; SiOF; and SiCN. Alternatively, examples of materials include inorganic insulating materials such as titanium oxide (TiO2), tantalum oxide (Ta2O5), aluminum oxide (Al2O3), magnesium oxide (MgO), chromium oxide (CrO x ), zirconium oxide (ZrO2), niobium oxide (Nb2O5), tin oxide (SnO2) or vanadium oxide (VO x). Alternatively, examples of materials include: various resins, such as epoxy resins, acrylic resins, polyimide-based resins, and phenolic resin-based resins; and low dielectric constant insulating materials, such as SiOCH, organic SOG, or fluorine-based resins (for example, materials with a dielectric constant k (=ε / ε0) of 3.5 or less, for example, specific examples of the material include fluorocarbon compounds, cycloperfluorocarbon polymers, benzocyclobutene, cyclic fluorine-based resins, polytetrafluoroethylene, amorphous tetrafluoroethylene, polyarylether, fluorinated arylether, fluorinated polyimide, amorphous carbon, paraxylene (polyparaxylene), and fluorinated fullerene). Examples of materials further include Silk (a trademark of The Dow Chemical Company, a coated low dielectric constant interlayer insulating film material) and Flare (a trademark of Honeywell Electronic Materials, a polyallyl ether (PAE)-based material). In addition, these materials may be used alone or in appropriate combinations thereof. In some cases, the interlayer insulating layer, insulating layer or insulating film may be formed based on known methods such as various CVD methods, various coating methods, various PVD methods including sputtering and vacuum vapor deposition methods, various printing methods such as screen printing methods, electroplating methods, electrodeposition methods, dipping methods or sol-gel methods. In a bottom emission type having a configuration and structure in which light emitted from a light emitting element passes through an interlayer insulating layer, the interlayer insulating layer needs to contain a material transparent to the light emitted from the light emitting element, and a light emitting element driving unit needs to be formed so as not to block the light emitted from the light emitting element. In the bottom emission type, the light emitting element driving unit may also be arranged above the first electrode.

[0134] An insulating or conductive protective film is preferably disposed above the organic layer to prevent moisture from reaching the organic layer. The protective film is preferably formed by a film forming method such as a vacuum vapor deposition method, or a film forming method such as a CVD method or an MOCVD method, based specifically on a film forming particle with small energy, because the influence on the substrate can be reduced. Alternatively, in order to prevent the reduction in brightness due to the degradation of the organic layer, it is desirable to set the film forming temperature to room temperature. In addition, in order to prevent the peeling of the protective film, it is desirable to form the protective film under conditions that minimize the stress of the protective film. In addition, the protective film is preferably formed without exposing the formed electrode to the atmosphere. As a result, the degradation of the organic layer caused by moisture or oxygen in the atmosphere can be prevented. In addition, in the case of a top emission type, it is desirable that the protective film is composed of a material that transmits more than 80% of the light generated in the organic layer. Specific examples of the material include inorganic amorphous insulating materials such as the following materials. This inorganic amorphous insulating material does not generate grains, and therefore has low water permeability and forms a good protective film. Specifically, as a material for forming the protective film, a dense, moisture-impermeable material that is transparent to the light emitted from the light-emitting layer is preferably used. More specific examples of the material include amorphous silicon (α-Si), amorphous silicon carbide (α-SiC), amorphous silicon nitride (α-Si 1-x Nx ), amorphous silicon oxide (α-Si 1- y O y ), amorphous carbon (α-C), amorphous silicon oxide / nitride (α-SiON), Al2O3, and TiO2. The thickness of the protective film can be, for example, 1 μm to 8 μm, but is not limited to these values. Note that in the case where the protective film is composed of a conductive material, the protective film only needs to be composed of a transparent conductive material such as ITO or IZO.

[0135] The first substrate and the second substrate may be bonded (sealed) to each other with an adhesive layer (sealing layer). Examples of materials constituting the adhesive layer (sealing layer) include thermosetting adhesives such as acrylic adhesives, epoxy adhesives, urethane adhesives, silicone adhesives, or cyanoacrylate adhesives, and ultraviolet curable adhesives. Note that even if it is a bottom emission type, the organic EL display device may adopt a form in which the second substrate is provided above the second electrode, and the above-mentioned protective film and adhesive layer are formed between the first electrode and the second substrate from the first electrode side.

[0136] In the case where a display device is constituted by the light-emitting element unit of the present disclosure, etc., examples of the display device include an organic electroluminescent display device (abbreviated as an organic EL display device). When the organic EL display device is used as a color display organic EL display device, as described above, each organic EL element constituting the organic EL display device constitutes a sub-pixel. Here, one pixel is composed of three types of sub-pixels, for example, a red light emitting sub-pixel that emits red light, a green light emitting sub-pixel that emits green light, and a blue light emitting sub-pixel that emits blue light. Therefore, in this case, when the number of organic EL elements constituting the organic EL display device is N×M, the number of pixels is (N×M) / 3. On the outermost surface (specifically, the outer surface of the second substrate) that emits light in the display device, an ultraviolet absorption layer, a pollution prevention layer, a hard coating layer, and an antistatic layer may be formed, or a protective member (e.g., a glass cover) may be provided. The organic EL display device can be used, for example, as a monitor device constituting a personal computer, or a monitor device incorporated in a television receiver, a mobile phone, a personal digital assistant (PDA), or a game console. Alternatively, the organic EL display device may be applied to an electronic viewfinder (EVF) or a head-mounted display (HMD). Alternatively, the organic EL display device may constitute an image display device in an electronic paper such as an electronic book or an electronic newspaper, a bulletin board such as a sign, a poster, or a blackboard, a rewritable paper instead of printed paper, a display unit of a household appliance, a card display unit of a point card, etc., an electronic advertisement, or an electronic POP. In addition, the lighting device may be constituted by the light-emitting element unit of the present disclosure, etc., and examples of the lighting device include various lighting devices including a backlight device and a planar light source device for a liquid crystal display device. The head-mounted display includes, for example,

[0137] (a) a frame mounted on the observer's head; and

[0138] (b) An image display device attached to the frame.

[0139] The image display device comprises:

[0140] (A) a display device in the present disclosure; and

[0141] (B) An optical device on which light emitted from the display device of the present disclosure is incident and from which light is emitted.

[0142] The optical device includes:

[0143] (B-1) a light guide plate, wherein light incident on the light guide plate from the display device of the present disclosure propagates by total reflection and then emits light from the light guide plate toward an observer;

[0144] (B-2) a first deflection device (for example, comprising a volume holographic diffraction grating film) that deflects light incident on the light guide plate so that the light incident on the light guide plate is totally reflected in the light guide plate; and

[0145] (B-3) A second deflecting device (for example, including a volume hologram diffraction grating film) that deflects the light propagating in the light guide plate by total reflection multiple times so that the light propagating in the light guide plate by total reflection is emitted from the light guide plate.

[0146] [Example 1]

[0147] Example 1 relates to the light emitting element unit according to the first aspect and the fourth aspect of the present disclosure. Figure 1B A conceptual diagram showing a light emitting element unit of Example 1. Figure 8 A schematic partial cross-sectional view of a light emitting element unit of Example 1 is shown. Fig. 10A A schematic plan view showing a first electrode and the like in a light emitting element unit of Example 1.

[0148] The light emitting element unit of Example 1 will be described based on the light emitting element unit according to the first aspect of the present disclosure.

[0149] The light emitting element unit of Example 1 includes three light emitting elements 10 ( 10 a , 10 b , 10 c ).

[0150] The first light-emitting element 10a is obtained by laminating a 1a electrode 21a, a first organic layer 23a including a first light-emitting layer, a 2a electrode 22a, a second organic layer 23b including a second light-emitting layer, and a third organic layer 23c including a third light-emitting layer.

[0151] The second light-emitting element 10 b is obtained by laminating the first organic layer 23 a , the 1b-th electrode 21 b , the second organic layer 23 b , the 2b-th electrode 22 b , and the third organic layer 23 c .

[0152] The third light-emitting element 10c is obtained by laminating the first organic layer 23a, the second organic layer 23b, the 1c-th electrode 21c, the third organic layer 23c, and the 2c-th electrode 22c.

[0153] Furthermore, the light emitting element unit of Example 1 will be described according to the light emitting element unit according to the fourth aspect of the present disclosure.

[0154] The light-emitting element unit of Example 1 includes a plurality of light-emitting elements 10 (10a, 10b, 10c) having a laminated structure obtained by laminating a plurality of organic layers 23 (23a, 23b, 23c), each organic layer 23 (23a, 23b, 23c) including a light-emitting layer.

[0155] Each light emitting element 10 (10a, 10b, 10c) includes a first electrode 21 (21a, 21b, 21c), any one of a plurality of organic layers 23 (23a, 23b, 23c), and a second electrode 22 (22a, 22b, 22c), and

[0156] The first electrodes 21 (21a, 21b, 21c) constituting the light emitting elements 10 (10a, 10b, 10c) do not overlap each other. That is, the orthogonal projection images (orthogonal projection images on the first substrate) of the first electrodes 21 (21a, 21b, 21c) do not overlap each other.

[0157] Note that in the light-emitting element unit of Example 1 or Example 3 described later, specifically, the first light-emitting element 10a is composed of a red light-emitting element (red organic EL light-emitting element), the second light-emitting element 10b is composed of a green light-emitting element (green organic EL light-emitting element), and the third light-emitting element 10c is composed of a blue light-emitting element (blue organic EL light-emitting element).

[0158] In addition, in the organic EL display device of Example 1 or Example 2 or Example 3 described later, such light-emitting element units are arranged in a two-dimensional matrix. Above the first substrate 41, the first electrode 21 (21a, 21b, 21c), the organic layer 23 (23a, 23b, 23c), and the second electrode 22 (22a, 22b, 22c) are sequentially laminated. The light emitted from the light-emitting layer is emitted to the outside via the second substrate 42. That is, the display device of Example 1 is a top emission type display device.

[0159] The organic EL display device of Example 1 or Example 2 or Example 3 described later is a high-definition display device applied to, for example, an electronic viewfinder (EVF) or a head-mounted display (HMD). Alternatively, the organic EL display device of Example 1 or Example 2 or Example 3 described later is a large organic EL display device such as a television receiver. The number of pixels is, for example, 1920×1080. One of the light-emitting elements 10 constitutes a sub-pixel, and the number of light-emitting elements (specifically, organic EL elements) 10 is three times the number of pixels. The number of light-emitting element units is equal to the number of pixels.

[0160] In Example 1 or Example 2 or Example 3 described later, the first electrode 21 (21a, 21b, 21c) is used as an anode electrode, and the second electrode 22 (22a, 22b, 22c) is used as a cathode electrode. The first electrode 21 contains a light reflective material, specifically, an Al-Nd alloy. The second electrode 22 has a laminated structure of a transparent conductive layer and a semi-transmissive conductive layer. Specifically, the transparent conductive layer contains IZO, and the semi-transmissive conductive layer contains an alloy of magnesium (Mg) and silver (Ag). The semi-transmissive conductive layer may have a laminated structure. In this case, the upper layer (the layer located on the second substrate side) may contain an alloy of magnesium (Mg) and silver (Ag), and the lower layer (the layer located on the first substrate side) may contain calcium (Ca). Note that the second electrode 22 is shown as a single layer in the drawings. The first electrode 21 is formed based on a combination of a vacuum vapor deposition method and an etching method. In addition, the second electrode 22 is specifically formed by a film forming method such as a vacuum vapor deposition method in which the energy of the film-forming particles is small, and is not patterned (see Figure 1B ), but in Figure 1A When shown as a conceptual diagram, it may be partially diagrammatic.

[0161] In Example 1 or Example 2 or Example 3 described later, the organic EL element driving unit for driving the first light emitting element 10a is composed of a TFT, and the TFT includes a gate electrode 51a, a gate insulating film 52, a silicon layer (semiconductor layer) 53, a channel forming region 54a provided in the silicon layer 53, and a source / drain region 55a. A portion of the silicon layer 53 located between the source / drain regions 55a and above the gate electrode 51a corresponds to the channel forming region 54a. The organic EL element driving unit for driving the second light emitting element 10b is also composed of a TFT, and the TFT includes a gate electrode 51b, a gate insulating film 52, a silicon layer 53, a channel forming region 54b provided in the silicon layer 53, and a source / drain region 55b. A portion of the silicon layer 53 located between the source / drain regions 55b and above the gate electrode 51b corresponds to the channel forming region 54b. The organic EL element driving unit for driving the third light emitting element 10c is also constituted by a TFT, and the TFT includes a gate electrode 51c, a gate insulating film 52, a silicon layer 53, a channel formation region 54c provided in the silicon layer 53, and a source / drain region 55c. A portion of the silicon layer 53 located between the source / drain regions 55c and above the gate electrode 51c corresponds to the channel formation region 54c.

[0162] Note that the TFT in the example shown is a bottom gate type, but the TFT may be a top gate type. The gate electrode of the TFT is connected to a scanning circuit (not shown). In the accompanying drawings, one TFT for one organic EL element driving unit is shown. The organic EL element driving unit is covered by an insulating layer 43.

[0163] The 1a-th electrode 21a constituting the first light-emitting element 10a is formed on the interlayer insulating layer 31 provided on the insulating layer 43, and is connected to one of the source / drain regions 55a of the TFT for driving the first light-emitting element 10a through the contact hole portion 56a formed in the insulating layer 43. The interlayer insulating layer 32 having an opening is formed so as to surround the 1a-th electrode 21a, and the first organic layer 23a including the first light-emitting layer is formed from the 1a-th electrode 21a exposed at the bottom of the opening to the interlayer insulating layer 32 so as to cover the 1a-th electrode 21a and the interlayer insulating layer 32. In addition, the 2a-th electrode 22a is formed on the first organic layer 23a. The first organic layer 23a and the 2a-th electrode 22a are so-called unpatterned solid films. Note that the second organic layer 23b including the second light-emitting layer and the third organic layer 23c including the third light-emitting layer are laminated above the 2a-th electrode 22a. In addition, the interlayer insulating layer 33 is formed on the 2a-th electrode 22a.

[0164] The 1b-th electrode 21b constituting the second light-emitting element 10b is formed on the interlayer insulating layer 34 provided on the insulating layer 33, and is connected to one of the source / drain regions 55b of the TFT for driving the second light-emitting element 10b through the contact hole portions 56b and 57b formed in the insulating layer 43 and the interlayer insulating layers 31, 32, and 33. The insulating film 59A is formed on a portion of the inner surface of each of the contact hole portions 57b and 57c so that the contact hole portions 57b and 57c are not short-circuited with the 2a-th electrode 22a. The interlayer insulating layer 35 having an opening is formed so as to surround the 1b-th electrode 21b, and the second organic layer 23b including the second light-emitting layer is formed from the 1b-th electrode 21b exposed at the bottom of the opening to the interlayer insulating layer 35 so as to cover the 1b-th electrode 21b and the interlayer insulating layer 35. In addition, the 2b-th electrode 22b is formed on the second organic layer 23b. The second organic layer 23b and the 2b-th electrode 22b are so-called unpatterned solid films. Note that the third organic layer 23c including the third light emitting layer is laminated above the 2b-th electrode 22b. In addition, the first organic layer 23a including the first light emitting layer is located below the 1b-th electrode 21b. An interlayer insulating layer 36 is formed on the 2b-th electrode 22b.

[0165] The 1c-th electrode 21c constituting the third light-emitting element 10c is formed on the interlayer insulating layer 37 provided on the insulating layer 36, and is connected to one of the source / drain regions 55c of the TFT for driving the third light-emitting element 10c through the contact hole portions 56c, 57c, and 58c formed in the insulating layer 43 and the interlayer insulating layers 31, 32, 33, 34, 35, and 36. The insulating film 59B is formed on a portion of the inner surface of the contact hole portion 58c so that the contact hole portion 58c is not short-circuited with the 2b-th electrode 22b. The interlayer insulating layer 38 having an opening is formed so as to surround the 1c-th electrode 21c, and the third organic layer 23c including the third light-emitting layer is formed from the 1c-th electrode 21c exposed at the bottom of the opening to the interlayer insulating layer 38 so as to cover the 1c-th electrode 21c and the interlayer insulating layer 38. In addition, the 2c-th electrode 22c is formed on the third organic layer 23c. The third organic layer 23c and the 2c-th electrode 22c are so-called unpatterned solid films. The second organic layer 23b including the second light emitting layer and the first organic layer 23a including the first light emitting layer are located below the 1c-th electrode 21c.

[0166] In the light emitting element unit of Example 1, the 2a-th electrode 22a, the 2b-th electrode 22b, and the 2c-th electrode 22c are connected to each other in, for example, a peripheral region (not shown) of the organic EL display device, and the same potential is applied to them, but not limited thereto.

[0167] In addition, in the light emitting element unit of Example 1 or Example 3,

[0168] In the first light-emitting element 10a, light emitted in the first light-emitting layer resonates between the 1a interface formed by the interface between the 1a electrode 21a and the first organic layer 23a or the first light reflecting layer 25a and the 2a interface formed by the interface between the 2a electrode 22a and the first organic layer 23a, and a part of the resonant light is emitted from the 2a electrode 22a.

[0169] In the second light-emitting element 10b, light emitted in the second light-emitting layer resonates between the 1b interface formed by the interface between the 1b electrode 21b and the second organic layer 23b or the second light-reflecting layer 25b and the 2b interface formed by the interface between the 2b electrode 22b and the second organic layer 23b, and a part of the resonant light is emitted from the 2b electrode 22b, and

[0170] In the third light-emitting element 10c, light emitted in the third light-emitting layer resonates between the 1c interface formed by the interface between the 1c electrode 21c and the third organic layer 23c or the third light-reflecting layer 25c and the 2c interface formed by the interface between the 2c electrode 22c and the third organic layer 23c, and a portion of the resonant light is emitted from the 2c electrode 22c. Note that in Example 2 described later, in the third light-emitting element 10c, light emitted in the third light-emitting layer resonates between the 1c interface formed by the interface between the 1c electrode 21c and the third organic layer 23c or the third light-reflecting layer 25c and the 2c interface formed by the interface between the 2c electrode 22c and the third organic layer 23c, and a portion of the resonant light is emitted from the 2c electrode 22c. That is, each light-emitting element has a resonator structure. Figure 1A and Figure 1B and the following Figure 2B , Figure 3A , Figure 4C , Figure 5A ,as well as Figure 7 In the figure, the resonator structure is indicated by the white arrow.

[0171] Specifically,

[0172] When the distance from the maximum emission position of the first light-emitting layer to the 1a interface is L 1A Indicated by OL, its optical distance 1A The distance from the maximum emission position of the first light-emitting layer to the 2a interface is represented by L 2A Indicated by OL, its optical distance 2A Indicates that, and m 1A and m 2A When it represents an integer, it satisfies the following formulas (A-1), (A-2), (A-3), and (A-4),

[0173] When the distance from the maximum emission position of the second light-emitting layer to the 1b interface is L 1B Indicated by OL, its optical distance 1B The distance from the maximum emission position of the second light-emitting layer to the 2b interface is represented by L 2B Indicated by OL, its optical distance 2B Indicates that, and m 1B and m 2B When it represents an integer, it satisfies the following formulas (B-1), (B-2), (B-3), and (B-4), and

[0174] When the distance from the maximum emission position of the third light-emitting layer to the 1c interface is L 1C Indicated by OL, its optical distance 1C The distance from the maximum emission position of the third light-emitting layer to the 2c interface is represented by L 2CIndicated by OL, its optical distance 2C Indicates that, and m 1C and m 2C When it represents an integer, it satisfies the following formulae (C-1), (C-2), (C-3), and (C-4).

[0175] 0.7{-Φ 1A / (2π)+m 1A}≤2×OL 1A / λ A ≤1.2{-Φ 1A / (2π)+m 1A (A-1)

[0176] 0.7{-Φ 2A / (2π)+m 2A}≤2×OL 2A / λ A ≤1.2{-Φ 2A / (2π)+m 2A (A-2)

[0177] L 1A <L 2A (A-3)

[0178] m 1A <m 2A (A-4)

[0179] 0.7{-Φ 1B / (2π)+m 1B}≤2×OL 1B / λ B ≤1.2{-Φ 1B / (2π)+m 1B (B-1)

[0180] 0.7{-Φ 2B / (2π)+m 2B}≤2×OL 2B / λ B ≤1.2{-Φ 2B / (2π)+m 2B (B-2)

[0181] L 1B <L 2B (B-3)

[0182] m 1B <m 2B (B-4)

[0183] 0.7{-Φ 1C / (2π)+m 1C}≤2×OL 1C / λ C ≤1.2{-Φ 1C / (2π)+m 1C}(C-1)

[0184] 0.7{-Φ 2C / (2π)+m 2C}≤2×OL 2C / λ C ≤1.2{-Φ 2C / (2π)+m 2C (C-2)

[0185] L 1C <L 2C (C-3)

[0186] m 1C <m 2C (C-4)

[0187] here,

[0188] λ A : Maximum peak wavelength of the spectrum of light generated in the first light-emitting layer (or the desired wavelength of light generated in the first light-emitting layer)

[0189] Φ 1A : Phase shift of light reflected from the 1a interface (unit: radian)

[0190] Assume that -2π<Φ 1A ≤0.

[0191] Φ 2A : Phase shift of light reflected from the 2a interface (unit: radian)

[0192] Assume that -2π<Φ 2A ≤0.

[0193] λ B : Maximum peak wavelength of the spectrum of light generated in the second light-emitting layer (or desired wavelength of light generated in the second light-emitting layer)

[0194] Φ 1B : Phase shift of light reflected from the 1b interface (unit: radian)

[0195] Assume that -2π<Φ 1B ≤0.

[0196] Φ 2B : Phase shift of light reflected from the 2b interface (unit: radian)

[0197] Assume that -2π<Φ 2B ≤0.

[0198] λC : Maximum peak wavelength of the spectrum of light generated in the third light-emitting layer (or desired wavelength of light generated in the third light-emitting layer)

[0199] Φ 1C : Phase shift of light reflected from the 1c interface (unit: radian)

[0200] Assume that -2π<Φ 1C ≤0.

[0201] Φ 2C : Phase shift of light reflected from the 2c interface (unit: radian)

[0202] Assume that -2π<Φ 2C ≤0.

[0203] In addition, in this case, satisfying m 1A =0,m 2A =1,m 1B =0,m 2B =1,m 1C = 0, and m 2C =1, but not limited to this.

[0204] Note that Figure 1A , Figure 1B ,as well as Figure 5A In the example shown in (Example 3), the 1a interface is composed of the interface between the 1a electrode 21a and the first organic layer 23a, the 2a interface is composed of the interface between the 1b electrode 21b and the second organic layer 23b, and the 3a interface is composed of the interface between the 1c electrode 21c and the third organic layer 23c. Alternatively, as Figure 2B [Modification (2) of Example 1] and Figure 7 As shown in [Modification (4) of Example 3], the first light reflecting layer 25a may be formed on the interlayer insulating layer 31 below the 1a electrode 21a, the second light reflecting layer 25b may be formed on the insulating layer 34 below the 1b electrode 21b, and the third light reflecting layer 25c may be formed on the interlayer insulating layer 37 below the 1c electrode 21c. The 1a interface may be composed of the first light reflecting layer 25a, the 2a interface may be composed of the second light reflecting layer 25b, and the 3a interface may be composed of the third light reflecting layer 25c. In addition, as Figure 4CAs shown in (Modification (4) of Example 2), the third light reflecting layer 25c may be formed in the interlayer insulating layer 37 below the 1c-th electrode 21c, the 1a-th interface may be composed of the first light reflecting layer 25a, the 2a-th interface may be composed of the second light reflecting layer 25b, and the 3a-th interface may be composed of the third light reflecting layer 25c. The first light reflecting layer 25a, the second light reflecting layer 25b, and the third light reflecting layer 25c may be composed of, for example, an aluminum (Al) layer, and the 1a-th electrode 21a, the 1b-th electrode 21b, and the 1c-th electrode 21c only need to be composed of a transparent conductive material.

[0205] In Example 1 or Example 2 or Example 3 described later, the first substrate 41 is composed of a silicon substrate, alkali-free glass, or quartz glass, and the second substrate 42 is composed of alkali-free glass or quartz glass. A protective film 44 containing SiN is formed on the 2c electrode 22c, and the first substrate 41 and the second substrate 42 are bonded to each other (bonded to each other) using an adhesive layer (sealing layer) (not shown). The black matrix layer BM can be formed in the region of the second substrate 42 corresponding to the portion between the first light-emitting element 10a and the second light-emitting element 10b, the region of the second substrate 42 corresponding to the portion between the first light-emitting element 10a and the third light-emitting element 10c, and the region of the second substrate 42 corresponding to the portion between the second light-emitting element 10b and the third light-emitting element 10c.

[0206] In the following, reference is made to a schematic partial end view of a first substrate, etc. Fig.19A , Fig.19B , Fig. 20A , Fig. 20B , Fig.21 , Fig. 22 , Fig.23 , Fig.24 , Fig.25 ,as well as Fig.26 , a method of manufacturing the light emitting element unit and the organic EL display device of Example 1 will be described.

[0207] [STEP-100]

[0208] First, the first substrate 41 is prepared, and an organic EL element driving unit including TFTs for driving the first light emitting element 10a, the second light emitting element 10b, and the third light emitting element 10c is provided by a known method on the first substrate 41. Subsequently, an insulating layer 43 is formed on the entire surface by a known method.

[0209] [STEP-110]

[0210] Thereafter, the first light emitting element 10a is formed.

[0211] [STEP-110A]

[0212] Specifically, a hole portion is formed in the insulating layer 43 by a laser etching method, and one of the source / drain regions 55a, one of the source / drain regions 55b, and one of the source / drain regions 55c are exposed at the bottom of the hole portion. Then, a conductive material film is formed on the insulating layer 43 including the inside of the hole portion, and the conductive material film is patterned to form contact hole portions 56a, 56b, and 56c. Subsequently, an interlayer insulating layer 31 is formed on the entire surface by a known method, and a recessed portion exposing the contact hole portion 56a is formed in the interlayer insulating layer 31 above the contact hole portion 56a (see Fig.19A ).

[0213] [STEP-110B]

[0214] Subsequently, a conductive material film for forming the 1a-th electrode 21a is formed on the interlayer insulating layer 31 including the recessed portion and patterned to form the 1a-th electrode 21a. The 1a-th electrode 21a and one of the source / drain regions 55a are electrically connected to each other through the contact hole portion 56a.

[0215] [STEP-110C]

[0216] Next, for example, an interlayer insulating layer 32 made of silicon oxynitride (SiON) is formed by sputtering or CVD, and an opening is formed in the interlayer insulating layer 32 by photolithography and etching techniques. The 1a-th electrode 21a is exposed at the bottom of the opening.

[0217] [STEP-110D]

[0218] Thereafter, a hole injection layer, a hole transport layer, a red light emitting layer, an electron transport layer, and an electron injection layer are sequentially formed from the 1a electrode 21a to the interlayer insulating layer 32, for example by vapor deposition, so as to cover the 1a electrode 21a and the interlayer insulating layer 32, thereby obtaining a first organic layer 23a.

[0219] [STEP-110E]

[0220] Then, the 2a-th electrode 22a is formed on the entire surface by, for example, vapor deposition (see Fig.19B Then, in order to prevent a short circuit between the contact hole portions 57b and 57c described later and the 2a-th electrode 22a, an insulating film 59A is formed (see Fig. 20A ), and then an interlayer insulating layer 33 containing SiN is formed on the entire surface by, for example, a CVD method.

[0221] [STEP-120]

[0222] Next, the second light emitting element 10b is formed.

[0223] [STEP-120A]

[0224] Specifically, holes are formed in the interlayer insulating layer 33, the insulating film 59A, and the interlayer insulating layers 32 and 31 by laser etching, and the contact hole portions 56b and 56c are exposed at the bottom of the holes. Then, a conductive material film is formed on the interlayer insulating layer 33 including the inside of the hole portion, and the conductive material film is patterned to form the contact hole portions 57b and 57c (see Fig. 20B ).

[0225] [STEP-120B]

[0226] Subsequently, an interlayer insulating layer 34 is formed on the entire surface by a known method, and a recessed portion exposing the contact hole portion 57b is formed in the interlayer insulating layer 34 above the contact hole portion 57b. Then, a conductive material film for forming the 1b-th electrode 21b is formed on the interlayer insulating layer 34 including the recessed portion, and the conductive material film is patterned to form the 1b-th electrode 21b (see Fig.21 ). The 1b-th electrode 21b and one of the source / drain regions 55b are electrically connected to each other through the contact hole portions 57b and 56b.

[0227] [STEP-120C]

[0228] Next, for example, an interlayer insulating layer 35 made of silicon oxynitride (SiON) is formed by sputtering or CVD, and an opening is formed in the interlayer insulating layer 35 by photolithography and etching techniques. The 1b-th electrode 21b is exposed at the bottom of the opening.

[0229] [STEP-120D]

[0230] Thereafter, a hole injection layer, a hole transport layer, a green light emitting layer, an electron transport layer, and an electron injection layer are sequentially formed from the 1b electrode 21b to the interlayer insulating layer 35, for example by vapor deposition, so as to cover the 1b electrode 21b and the interlayer insulating layer 35, thereby obtaining a second organic layer 23b.

[0231] [STEP-120E]

[0232] Subsequently, the second electrode 22b is formed on the entire surface by, for example, vapor deposition (see Fig. 22 Then, in order to prevent a short circuit from occurring between the contact hole portion 58c and the 2b-th electrode 22b described later, an insulating film 59B is formed (see Fig.23 ). Next, an interlayer insulating layer 36 made of SiN is formed on the entire surface by, for example, CVD method (see Fig.24 ).

[0233] [STEP-130]

[0234] Next, the third light emitting element 10c is formed.

[0235] [STEP-130A]

[0236] Specifically, a hole portion is formed in the interlayer insulating layer 36, the insulating film 59B, and the interlayer insulating layers 35 and 34 by a laser etching method, and the contact hole portion 57c is exposed at the bottom of the hole. Then, a conductive material film is formed on the interlayer insulating layer 36 including the inside of the hole portion, and the conductive material film is patterned to form the contact hole portion 58c.

[0237] [STEP-130B]

[0238] Subsequently, an interlayer insulating layer 37 is formed on the entire surface by a known method, and a recessed portion exposing the contact hole portion 58c is formed in the interlayer insulating layer 37 above the contact hole portion 58c. Then, a conductive material film for forming the 1c-th electrode 21c is formed on the interlayer insulating layer 37 including the recessed portion, and the conductive material film is patterned to form the 1c-th electrode 21c (see Fig.25 ). The 1c-th electrode 21c and one of the source / drain regions 55c are electrically connected to each other through the contact hole portion 58c, the contact hole portion 57c, and the contact hole portion 56c.

[0239] [STEP-130C]

[0240] Next, for example, an interlayer insulating layer 38 made of silicon oxynitride (SiON) is formed by sputtering or CVD, and an opening is formed in the interlayer insulating layer 38 by photolithography and etching techniques. The 1c-th electrode 21c is exposed at the bottom of the opening.

[0241] [STEP-130D]

[0242] Thereafter, for example by vapor deposition, a hole injection layer, a hole transport layer, a blue light emitting layer, an electron transport layer, and an electron injection layer are sequentially formed from the 1c electrode 21c to the interlayer insulating layer 37 so as to cover the 1c electrode 21c and the interlayer insulating layer 37, thereby obtaining a third organic layer 23c.

[0243] [STEP-130E]

[0244] Then, the second c-electrode 22c is formed on the entire surface by, for example, vapor deposition (see Fig.26 ).

[0245] [STEP-140]

[0246] Thereafter, a protective film 44 containing SiN is formed on the entire surface. Subsequently, the first substrate 41 and the second substrate 42 are bonded (adhered) to each other using an adhesive layer (sealing layer) (not shown). Through the above operations, the organic EL display device can be completed.

[0247] In the light-emitting element unit of Example 1 above, each light-emitting element is obtained by laminating the first organic layer, the second organic layer, and the third organic layer. That is, the organic layer can be deposited without using a vapor deposition mask. Therefore, mask alignment in the RGB color separation structure is not required, and various display devices are easily manufactured, such as micro displays such as organic EL display devices with fine pixel pitches or large-scale displays such as large-scale organic EL display devices that hardly apply vapor deposition masks. In addition, the first light-emitting element has a first light-emitting portion including the 1a electrode, the first organic layer, and the 2a electrode. The second light-emitting element has a second light-emitting portion including the 1b electrode, the second organic layer, and the 2b electrode. The third light-emitting element has a third light-emitting portion including the 1c electrode, the third organic layer, and the 2c electrode. In each light-emitting portion, the microcavity (resonator structure) can be optimized. Alternatively, each light-emitting element has a light-emitting portion of a first electrode, an organic layer, and a second electrode, and the first electrodes constituting the corresponding light-emitting element in the light-emitting element do not overlap each other between the light-emitting elements. Therefore, the microcavity (resonator structure) can be optimized in each light-emitting portion. Therefore, light extraction efficiency can be improved, and high luminous efficiency and color purity can also be achieved.

[0248] like Figure 2A A conceptual diagram of a modification example (1) of the light emitting element unit of Example 1 shown in FIG. Fig. 9 Schematic partial cross-sectional view of the light-emitting element unit of Example 1 shown. The 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c can all be composed of a common second electrode 22. Note that the material constituting the portion of the second electrode 22 connecting the 2a electrode 22a and the 2b electrode 22b, and the portion of the second electrode 22 connecting the 2b electrode 22b and the 2c electrode 22c can be the same as or different from the material constituting the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c.

[0249] In the above example 1, if Fig. 10A As shown in FIG. 1 , the contact holes 56a, 57b, and 58c are formed adjacent to the 1a electrode 21a, the 1b electrode 21b, and the 1c electrode 21c, respectively. However, the formation of the contact holes is not limited to this formation method. Fig. 10BAs shown in FIG. 1 , contact hole portions 56a, 57b, and 58c may be formed at the lower portions of the 1a electrode 21a, the 1b electrode 21b, and the 1c electrode 21c, respectively. In addition, instead of connecting the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c to each other in the peripheral region (not shown) of the organic EL display device, as shown in FIG. Fig. 10C As shown in FIG. 1 , the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c may be individually connected to the organic EL element driving unit through the contact holes 66, 67, and 68, or as shown in FIG. Fig. 10D As shown, each light emitting element unit can be connected to the organic EL element driving unit through the contact hole portion 69. The same applies to Examples 2 and 3 described below.

[0250] [Example 2]

[0251] Example 2 relates to the light emitting element unit according to the second aspect and the fourth aspect of the present disclosure. Figure 3A A conceptual diagram showing a light emitting element unit of Example 2. Fig.11 A schematic partial cross-sectional view of a light emitting element unit of Example 2 is shown.

[0252] The light emitting element unit of Example 2 includes three light emitting elements 10 (10a, 10b, 10c), wherein

[0253] The first light-emitting element 10a and the second light-emitting element 10b are juxtaposed, the first light-emitting element 10a includes a 1a-th electrode 21a, a first organic layer 23d including a first light-emitting layer, and a 2a-th electrode 22a, and the second light-emitting element 10b includes a 1b-th electrode 21b, a first organic layer 23d, and a 2b-th electrode 22b.

[0254] The third light-emitting element 10c is obtained by laminating the first organic layer 23d, the 1c-th electrode 21c, the third organic layer 23c including the third light-emitting layer, and the 2c-th electrode 22c.

[0255] The first color filter 24a is provided on the light emitting side of the first light emitting element 10a, and

[0256] The second color filter 24b is provided on the light emitting side of the second light emitting element 10b.

[0257] Here, the 2a-th electrode 22a and the 2b-th electrode 22b are common and may be referred to as a "common second electrode 22d" hereinafter.

[0258] Furthermore, the light emitting element unit of Example 2 will be described according to the light emitting element unit based on the fourth aspect of the present disclosure.

[0259] The light emitting element unit of Example 2 includes a plurality of light emitting elements 10 (10a, 10b, 10c) having a laminated structure obtained by laminating a plurality of organic layers 23 (23d, 23d, 23c) each including a light emitting layer.

[0260] Each light emitting element 10 (10a, 10b, 10c) includes a first electrode 21 (21a, 21b, 21c), any one of a plurality of organic layers 23 (23d, 23d, 23c), and a second electrode 22 (22a, 22b, 22c), and

[0261] The first electrodes 21 (21a, 21b, 21c) constituting the respective light emitting elements 10 (10a, 10b, 10c) do not overlap each other. That is, the orthogonal projection images (orthogonal projection images on the first substrate 41) of the first electrodes 21 (21a, 21b, 21c) do not overlap each other.

[0262] In the light-emitting element unit of Example 2, the first light-emitting element 10a and the second light-emitting element 10b can be composed of a yellow light-emitting element (yellow organic EL light-emitting element), or can be composed of an orange light-emitting element (orange organic EL light-emitting element). That is, the organic layer 23d emits yellow light or orange light. In addition, in this case, the first color filter 24a only needs to be a color filter that selectively transmits red, and the second color filter 24b only needs to be a color filter that selectively transmits green. In addition, the third light-emitting element 10c only needs to be composed of a blue light-emitting element (blue organic EL light-emitting element), and the organic layer 23c emits blue light. The black matrix layer BM can be arranged between the color filters.

[0263] The 1a-th electrode 21a constituting the first light emitting element 10a is formed on the interlayer insulating layer 31 disposed on the insulating layer 43, and is connected to one of the source / drain regions 55a of the TFT for driving the first light emitting element 10a through the contact hole portion 56a formed in the insulating layer 43. The 1b-th electrode 21b constituting the second light emitting element 10b is also formed on the interlayer insulating layer 31 disposed on the insulating layer 43, and is connected to one of the source / drain regions 55b of the TFT for driving the second light emitting element 10b through the contact hole portion 56b formed in the insulating layer 43. The interlayer insulating layer 32 having an opening is formed so as to surround the 1a-th electrode 21a and the 1b-th electrode 21b, and the first organic layer 23d including the first light emitting layer is formed from the 1a-th electrode 21a and the 1b-th electrode 21b exposed at the bottom of the opening to the interlayer insulating layer 32 so as to cover the 1a-th electrode 21a, the 1b-th electrode 21b, and the interlayer insulating layer 32. In addition, a common second electrode 22d is formed on the first organic layer 23d. The first organic layer 23d and the common second electrode 22d are so-called unpatterned solid films. Note that a third organic layer 23c including a third light-emitting layer is laminated above the common second electrode 22d in an area outside the area of ​​the first light-emitting element 10a and the area of ​​the second light-emitting element 10b. In addition, an interlayer insulating layer 33 is formed on the common second electrode 22d.

[0264] The 1c-th electrode 21c constituting the third light-emitting element 10c is formed on the interlayer insulating layer 34 provided on the insulating layer 33, and is connected to one of the source / drain regions 55c of the TFT for driving the third light-emitting element 10c through the contact hole portions 56c and 57c formed in the insulating layer 43 and the interlayer insulating layers 31, 32, 33, and 34. The insulating film 59A is formed on a portion of the inner surface of the contact hole portion 57c so that the contact hole portion 57c is not short-circuited with the common second electrode 22d. The interlayer insulating layer 35 having an opening is formed so as to surround the 1c-th electrode 21c, and the third organic layer 23c including the third light-emitting layer is formed from the 1c-th electrode 21c exposed at the bottom of the opening to the interlayer insulating layer 35 so as to cover the 1c-th electrode 21c and the interlayer insulating layer 35. In addition, the 2c-th electrode 22c is formed on the third organic layer 23c. The third organic layer 23c and the 2c-th electrode 22c are patterned.

[0265] Likewise, in the light emitting element unit of Example 2, the common second electrode 22d and the 2c-th electrode 22c are connected to each other, for example, in the peripheral region (not shown) of the organic EL display device, and the same potential is applied thereto, but not limited thereto.

[0266] The light emitting element unit and the organic EL display device of Example 2 can be manufactured by a method substantially similar to the method of manufacturing the light emitting element unit and the organic EL display device described in Example 1, and thus a detailed description thereof is omitted.

[0267] In the light-emitting element unit of Example 2 above, the first light-emitting element and the second light-emitting element each include a first organic layer, and the third light-emitting element is obtained by laminating the first organic layer and the third organic layer. That is, the organic layer can be deposited without using a vapor deposition mask. Therefore, mask alignment in the RGB color separation structure is not required, and various display devices are easily manufactured, such as micro displays such as organic EL display devices with fine pixel pitches or large-scale displays such as large-scale organic EL display devices that hardly apply vapor deposition masks. In addition, the first light-emitting element and the second light-emitting element share the first organic layer. Therefore, this can simplify the structure of the first light-emitting element and the second light-emitting element, and make it easy to manufacture. In addition, the third light-emitting element has a third light-emitting portion including a 1c electrode, a third organic layer, and a 2c electrode, and the microcavity (resonator structure) in the third light-emitting portion can be optimized. Therefore, the light extraction efficiency can be improved, and high luminous efficiency and color purity can be achieved. Note that only two types of color filters are required, and thus the reduction in luminous efficiency can be further reduced.

[0268] Note that Figure 3B A conceptual diagram of a modification example (1) of the light emitting element unit of Example 2 shown in FIG. Fig.12 In the schematic partial cross-sectional view of the modification (1) of the light-emitting element unit of Example 2 shown, the third organic layer 23c including the third light-emitting layer can be laminated over the common second electrode 22d located in the region of the first light-emitting element 10a and the region of the second light-emitting element 10b.

[0269] In addition, if Figure 4A A conceptual diagram of a modification example (2) of the light emitting element unit of Example 2 shown in FIG. Fig.13 The schematic partial cross-sectional view of the modification (2) of the light emitting element unit of Example 2 shown in the figure can adopt a form in which the same potential is applied to the 2a electrode 22a and the 2b electrode 22b, and further, can adopt a form in which the same potential is applied to the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c. Specifically, the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c can all be composed of a common second electrode 22. Note that the material constituting the portion of the second electrode 22 connecting the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c can be the same as or different from the material constituting the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c.

[0270] In addition, if Figure 4B A conceptual diagram of a modification (3) of the light emitting element unit of Example 2 shown in FIG. Fig.14 A schematic partial cross-sectional view of a modification (3) of the light-emitting element unit of Example 2 shown, wherein the modification (3) is a modification of the modification (1) and the modification (2), and a third organic layer 23c including a third light-emitting layer can be laminated above the 2a electrode 22a and the 2b electrode 22b located in the region of the first light-emitting element 10a and the region of the second light-emitting element 10b.

[0271] [Example 3]

[0272] Example 3 relates to the light emitting element unit according to the third aspect and the fourth aspect of the present disclosure. Figure 5A A conceptual diagram showing a light emitting element unit of Example 3. Fig.15 A schematic partial cross-sectional view of a light emitting element unit of Example 3 is shown.

[0273] The light emitting element unit of Example 3 includes three light emitting elements 10 ( 10 a , 10 b , 10 c ).

[0274] The first light-emitting element 10 a is obtained by laminating the 1a-th electrode 21 a , the first organic layer 23 a including the first light-emitting layer, and the 2a-th electrode 22 a .

[0275] The second light-emitting element 10 b is obtained by laminating the first organic layer 23 a , the 1b-th electrode 21 b , the second organic layer 23 b including the second light-emitting layer, and the 2b-th electrode 22 b .

[0276] The third light-emitting element 10c is obtained by laminating the first organic layer 23a, the second organic layer 23b, the 1c-th electrode 21c, the third organic layer 23c including the third light-emitting layer, and the 2c-th electrode 22c.

[0277] Furthermore, the light emitting element unit of Example 3 will be described according to the light emitting element unit based on the fourth aspect of the present disclosure.

[0278] The light emitting element unit of Example 3 includes a plurality of light emitting elements 10 (10a, 10b, 10c) having a laminated structure obtained by laminating a plurality of organic layers 23 (23a, 23b, 23c) each including a light emitting layer.

[0279] Each light emitting element 10 (10a, 10b, 10c) includes a first electrode 21 (21a, 21b, 21c), any one of a plurality of organic layers 23 (23a, 23b, 23c), and a second electrode 22 (22a, 22b, 22c), and

[0280] The first electrodes 21 (21a, 21b, 21c) constituting the respective light emitting elements 10 (10a, 10b, 10c) do not overlap each other. That is, the orthogonal projection images (orthogonal projection images on the first substrate 41) of the first electrodes 21 (21a, 21b, 21c) do not overlap each other.

[0281] The 1a-th electrode 21a constituting the first light-emitting element 10a is formed on the interlayer insulating layer 31 provided on the insulating layer 43, and is connected to one of the source / drain regions 55a of the TFT for driving the first light-emitting element 10a through the contact hole portion 56a formed in the insulating layer 43. The interlayer insulating layer 32 having an opening is formed so as to surround the 1a-th electrode 21a, and the first organic layer 23a including the first light-emitting layer is formed from the 1a-th electrode 21a exposed at the bottom of the opening to the interlayer insulating layer 32 so as to cover the 1a-th electrode 21a and the interlayer insulating layer 32. In addition, the 2a-th electrode 22a is formed on the first organic layer 23a. The first organic layer 23a and the 2a-th electrode 22a are so-called unpatterned solid films. Note that the second organic layer 23b including the second light-emitting layer and the third organic layer 23c including the third light-emitting layer are not arranged above the 2a-th electrode 22a. In addition, the interlayer insulating layer 33 is formed on part of the 2a-th electrode 22a.

[0282] The 1b-th electrode 21b constituting the second light-emitting element 10b is formed on the interlayer insulating layer 34 provided on the insulating layer 33, and is connected to one of the source / drain regions 55b of the TFT for driving the second light-emitting element 10b through the contact hole portions 56b and 57b formed in the insulating layer 43 and the interlayer insulating layers 31, 32, and 33. The insulating film 59A is formed on a portion of the inner surface of each of the contact hole portions 57b and 57c so that the contact hole portions 57b and 57c are not short-circuited with the 2a-th electrode 22a. The interlayer insulating layer 35 having an opening is formed so as to surround the 1b-th electrode 21b, and the second organic layer 23b including the second light-emitting layer is formed from the 1b-th electrode 21b exposed at the bottom of the opening to the interlayer insulating layer 35 so as to cover the 1b-th electrode 21b and the interlayer insulating layer 35. In addition, the 2b-th electrode 22b is formed on the second organic layer 23b. The second organic layer 23b and the 2b-th electrode 22b are patterned. The third organic layer 23c including the third light emitting layer is not disposed above the 2b-th electrode 22b. In addition, the first organic layer 23a including the first light emitting layer is located below the 1b-th electrode 21b. The interlayer insulating layer 36 is formed on a portion of the 2b-th electrode 22b.

[0283] The 1c-th electrode 21c constituting the third light emitting element 10c is formed on the interlayer insulating layer 37 provided on the insulating layer 36, and is connected to one of the source / drain regions 55c of the TFT for driving the third light emitting element 10c through the contact hole portions 56c, 57c, and 58c formed in the insulating layer 43 and the interlayer insulating layers 31, 32, 33, 34, 35, and 36. The insulating film 59B is formed on a portion of the inner surface of the contact hole portion 58c so that the contact hole portion 58c is not short-circuited with the 2b-th electrode 22b. The interlayer insulating layer 38 having an opening is formed so as to surround the 1c-th electrode 21c, and the third organic layer 23c including the third light emitting layer is formed from the 1c-th electrode 21c exposed at the bottom of the opening to the interlayer insulating layer 38 so as to cover the 1c-th electrode 21c and the interlayer insulating layer 38. In addition, the 2c-th electrode 22c is formed on the third organic layer 23c. The third organic layer 23c and the 2c-th electrode 22c are patterned. The second organic layer 23b including the second light emitting layer and the first organic layer 23a including the first light emitting layer are located under the 1c-th electrode 21c.

[0284] Similarly, in the light emitting element unit of Example 3, the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c are connected to each other, for example, in the peripheral area (not shown) of the organic EL display device, and the same potential is applied to them, but not limited to this.

[0285] The light emitting element unit and the organic EL display device of Example 3 can be manufactured by a method substantially similar to the method of manufacturing the light emitting element unit and the organic EL display device described in Example 1, and thus a detailed description thereof is omitted.

[0286] Similarly, in the light-emitting element unit of Example 3 above, the organic layer can be deposited without using a vapor deposition mask. Therefore, mask alignment in the RGB color separation structure is not required, and various display devices are easily manufactured, such as a micro display such as an organic EL display device with a fine pixel pitch or a large-scale display such as a large-scale organic EL display device that hardly applies a vapor deposition mask. In addition, the first light-emitting element has a first light-emitting portion including a 1a electrode, a first organic layer, and a 2a electrode. The second light-emitting element has a second light-emitting portion including a 1b electrode, a second organic layer, and a 2b electrode. The third light-emitting element has a third light-emitting portion including a 1c electrode, a third organic layer, and a 2c electrode. In each light-emitting portion, the microcavity (resonator structure) can be optimized. Therefore, the light extraction efficiency can be improved, and high luminous efficiency and color purity can also be achieved.

[0287] Note that Figure 5B The light emitting element unit of Example 3 shown in Modification (1) and Fig.16In the schematic partial cross-sectional view of the modification (1) of the light-emitting element unit of Example 3 shown, the second organic layer 23b can be formed on (or above) the 2a-th electrode 22a. That is, the second organic layer 23b including the second light-emitting layer can be laminated above the 2a-th electrode 22a in the region located in the region of the first light-emitting element 10a.

[0288] In addition, if Fig. 6A A conceptual diagram of a modification example (2) of the light emitting element unit of Example 3 shown in FIG. Fig.17 A schematic partial cross-sectional view of a modification (2) of the light emitting element unit of Example 3 shown in FIG. Figure 6B The conceptual diagram and Fig.18 In the schematic partial cross-sectional view of the modification (3) of the light-emitting element unit of Example 3 shown, the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c can all be composed of a common second electrode 22. Note that the material constituting the portion of the second electrode 22 connecting the 2a electrode 22a and the 2b electrode 22b and the portion of the second electrode 22 connecting the 2b electrode 22b and the 2c electrode 22c can be the same as or different from the material constituting the 2a electrode 22a, the 2b electrode 22b, and the 2c electrode 22c.

[0289] So far, the present disclosure has been described based on preferred examples. However, the present disclosure is not limited to these examples. The configuration and structure of the light-emitting element unit, the light-emitting element, and the organic EL display device described in the examples are illustrative and can be appropriately changed. In Examples 1 and 3, (the first light-emitting element, the second light-emitting element, and the third light-emitting element) are respectively composed of (a red light-emitting element, a green light-emitting element, and a blue light-emitting element). Alternatively, (the first light-emitting element, the second light-emitting element, and the third light-emitting element) can be respectively composed of (a red light-emitting element, a blue light-emitting element, and a green light-emitting element), (a green light-emitting element, a red light-emitting element, and a blue light-emitting element), (a green light-emitting element, a blue light-emitting element, and a red light-emitting element), (a blue light-emitting element, a red light-emitting element, and a green light-emitting element) or (a blue light-emitting element, a green light-emitting element, and a red light-emitting element). If necessary, the first organic layer, the second organic layer, and the third organic layer can be patterned into, for example, strips.

[0290] The shading layer may be disposed between the light emitting elements to prevent light emitted from a certain light emitting element from entering a light emitting element adjacent to the certain light emitting element and causing optical crosstalk. In other words, a groove may be formed between the light emitting elements, and the groove may be filled with a shading material to form a shading layer. By arranging the shading layer in this way, the proportion of light emitted from a certain light emitting element entering an adjacent light emitting element may be reduced, and the occurrence of color mixing and the phenomenon of the chromaticity of the entire pixel shifting from the desired chromaticity may be suppressed. In addition, color mixing may be prevented. Therefore, when monochromatic light is emitted from a pixel, the color purity increases, and the chromaticity point deepens. Therefore, the color gamut is widened, and the range of color expression of the display device is widened. Alternatively, the shading property may be imparted to the black matrix layer BM.

[0291] The display device in the present disclosure may be applied to a lens interchangeable single-lens reflex type digital still camera. Fig.27A shows a front view of a digital camera, and Fig.27B A rear view of a digital camera is shown. A lens-interchangeable single-lens reflex digital camera has, for example, an interchangeable imaging lens unit (interchangeable lens) 212 on the front right side of a camera body 211, and a grip 213 to be gripped by an imaging person on the front left side of the camera body. In addition, a monitor 214 is provided approximately at the center of the rear surface of the camera body 211. An electronic viewfinder (eyepiece window) 215 is provided above the monitor 214. By looking at the electronic viewfinder 215, the imaging person can visually confirm the light image of the subject directed from the imaging lens unit 212, and determine the composition. In a lens-interchangeable single-lens reflex digital camera having such a configuration, the display device in the present disclosure can be used as the electronic viewfinder 215.

[0292] Alternatively, the display device in the present disclosure may be applied to a head-mounted display. Fig.28As shown in the external view, the head-mounted display 300 is composed of a transmissive head-mounted display having a main body 301, an arm 302, and a lens barrel 303. The main body 301 is connected to the arm 302 and the glasses 310. Specifically, the end of the long side direction of the main body 301 is attached to the arm 302. In addition, one side of the main body 301 is connected to the glasses 310 through a connecting member (not shown). Note that the main body 301 can be directly mounted on the head of the human body. The main body 301 has a control substrate for controlling the operation of the head-mounted display 300 and a built-in display unit. The arm 302 supports the lens barrel 303 relative to the main body 301 by connecting the main body 301 to the lens barrel 303. Specifically, the arm 302 fixes the lens barrel 303 to the main body 301 by joining to the end of the main body 301 and the end of the lens barrel 303. In addition, the arm 302 has a built-in signal line for transmitting data related to the image provided from the main body 301 to the lens barrel 303. The lens barrel 303 projects image light provided from the body 301 toward the eyes of the user wearing the head mounted display 300 through the lenses 311 of the glasses 310 via the arm 302. In the head mounted display 300 having the above configuration, the display device in the present disclosure can be used as a display unit built into the body 301.

[0293] Note that the present disclosure may have the following configurations.

[0294] [A01] "Light-emitting element unit: first aspect"

[0295] A light emitting element unit comprising three light emitting elements, wherein:

[0296] The first light-emitting element is obtained by laminating the first electrode 1a, the first organic layer including the first light-emitting layer, the second electrode 2a, the second organic layer including the second light-emitting layer, and the third organic layer including the third light-emitting layer,

[0297] a second light emitting element obtained by laminating a first organic layer, a 1b electrode, a second organic layer, a 2b electrode, and a third organic layer, and

[0298] The third light-emitting element is obtained by laminating a first organic layer, a second organic layer, a 1c electrode, a third organic layer, and a 2c electrode.

[0299] [A02] The light-emitting element unit according to [A01], wherein the 2a electrode, the 2b electrode, and the 2c electrode are all composed of a common second electrode.

[0300] [A03] The light-emitting element unit according to [A01] or [A02], wherein the same potential is applied to the 2a electrode, the 2b electrode, and the 2c electrode.

[0301] [A04] The light emitting element unit according to any one of [A01] to [A03], wherein the 2a-th electrode, the 2b-th electrode, and the 2c-th electrode each have a laminated structure of a transparent conductive layer and a semi-transmissive conductive layer.

[0302] [A05] The light-emitting element unit according to [A04], wherein the transparent conductive layer contains an oxide of indium and zinc (IZO).

[0303] [A06] The light emitting element unit according to [A04] or [A05], wherein the semi-transmissive conductive layer contains an alloy of magnesium and silver.

[0304] [A07] The light-emitting element unit according to any one of [A01] to [A06], wherein

[0305] In the first light-emitting element, light emitted in the first light-emitting layer resonates between the 1a interface consisting of the interface between the 1a electrode and the first organic layer or the first light-reflecting layer and the 2a interface consisting of the interface between the 2a electrode and the first organic layer, and a part of the resonant light is emitted from the 2a electrode.

[0306] In the second light-emitting element, light emitted in the second light-emitting layer resonates between the 1b interface consisting of the interface between the 1b electrode and the second organic layer or the second light-reflecting layer and the 2b interface consisting of the interface between the 2b electrode and the second organic layer, and a part of the resonant light is emitted from the 2b electrode, and

[0307] In the third light-emitting element, light emitted in the third light-emitting layer resonates between the 1c interface formed by the interface between the 1c electrode and the third organic layer or the third light reflecting layer, and the 2c interface formed by the interface between the 2c electrode and the third organic layer, and a portion of the resonant light is emitted from the 2c electrode.

[0308] [A08] The light emitting element unit according to [A07], wherein:

[0309] When the distance from the maximum emission position of the first light-emitting layer to the 1a interface is L 1A Indicated by OL, its optical distance 1A The distance from the maximum emission position of the first light-emitting layer to the 2a interface is represented by L 2A Indicated by OL, its optical distance 2A Indicates that, and m 1A and m 2A When it represents an integer, it satisfies the following formulas (A-1), (A-2), (A-3), and (A-4),

[0310] When the distance from the maximum emission position of the second light-emitting layer to the 1b interface is L 1BIndicated by OL, its optical distance 1B The distance from the maximum emission position of the second light-emitting layer to the 2b interface is represented by L 2B Indicated by OL, its optical distance 2B Indicates that, and m 1B and m 2B When it represents an integer, it satisfies the following formulas (B-1), (B-2), (B-3), and (B-4), and

[0311] When the distance from the maximum emission position of the third light-emitting layer to the 1c interface is L 1C Indicated by OL, its optical distance 1C The distance from the maximum emission position of the third light-emitting layer to the 2c interface is represented by L 2C Indicated by OL, its optical distance 2C Indicates that, and m 1C and m 2C When it represents an integer, it satisfies the following formulae (C-1), (C-2), (C-3), and (C-4).

[0312] 0.7{-Φ 1A / (2π)+m 1A}≤2×OL 1A / λ A ≤1.2{-Φ 1A / (2π)+m 1A (A-1)

[0313] 0.7{-Φ 2A / (2π)+m 2A}≤2×OL 2A / λ A ≤1.2{-Φ 2A / (2π)+m 2A (A-2)

[0314] L 1A <L 2A (A-3)

[0315] m 1A <m 2A (A-4)

[0316] 0.7{-Φ 1B / (2π)+m 1B}≤2×OL 1B / λ B ≤1.2{-Φ 1B / (2π)+m 1B}(B-1)

[0317] 0.7{-Φ 2B / (2π)+m2B}≤2×OL 2B / λ B ≤1.2{-Φ 2B / (2π)+m 2B (B-2)

[0318] L 1B <L 2B (B-3)

[0319] m 1B <m 2B (B-4)

[0320] 0.7{-Φ 1C / (2π)+m 1C}≤2×OL 1C / λ C ≤1.2{-Φ 1C / (2π)+m 1C}(C-1)

[0321] 0.7{-Φ 2C / (2π)+m 2C}≤2×OL 2C / λ C ≤1.2{-Φ 2C / (2π)+m 2C (C-2)

[0322] L 1C <L 2C (C-3)

[0323] m 1C <m 2C (C-4)

[0324] here,

[0325] λ A : Maximum peak wavelength of the spectrum of light generated in the first light-emitting layer (or the desired wavelength of light generated in the first light-emitting layer)

[0326] Φ 1A : Phase shift of light reflected from the 1a interface (unit: radian)

[0327] Assume that -2π<Φ 1A ≤0.

[0328] Φ 2A : Phase shift of light reflected from the 2a interface (unit: radian)

[0329] Assume that -2π<Φ 2A ≤0.

[0330] λ B: Maximum peak wavelength of the spectrum of light generated in the second light-emitting layer (or desired wavelength of light generated in the second light-emitting layer)

[0331] Φ 1B : Phase shift of light reflected from the 1b interface (unit: radian)

[0332] Assume that -2π<Φ 1B ≤0.

[0333] Φ 2B : Phase shift of light reflected from the 2b interface (unit: radian)

[0334] Assume that -2π<Φ 2B ≤0.

[0335] λ C : Maximum peak wavelength of the spectrum of light generated in the third light-emitting layer (or desired wavelength of light generated in the third light-emitting layer)

[0336] Φ 1C : Phase shift of light reflected from the 1c interface (unit: radian)

[0337] Assume that -2π<Φ 1C ≤0.

[0338] Φ 2C : Phase shift of light reflected from the 2c interface (unit: radian)

[0339] Assume that -2π<Φ 2C ≤0.

[0340] [A09] The light emitting element unit according to [A08], wherein m satisfies 1A =0,m 2A =1,m 1B =0,m 2B =1,m 1C = 0, and m 2C =1.

[0341] [B01] "Light-emitting element unit: second aspect"

[0342] A light emitting element unit comprising three light emitting elements, wherein:

[0343] A first light-emitting element and a second light-emitting element are juxtaposed, the first light-emitting element comprising a 1a-th electrode, a first organic layer comprising a first light-emitting layer, and a 2a-th electrode, and the second light-emitting element comprising a 1b-th electrode, a first organic layer, and a 2b-th electrode,

[0344] The third light-emitting element is obtained by laminating the first organic layer, the 1c electrode, the third organic layer including the third light-emitting layer, and the 2c electrode.

[0345] The first color filter is disposed on the light emitting side of the first light emitting element, and

[0346] The second color filter is provided on the light emitting side of the second light emitting element.

[0347] [B02] The light emitting element unit according to [B01], wherein the 2a electrode, the 2b electrode, and the 2c electrode are all composed of a common second electrode.

[0348] [B03] The light-emitting element unit according to [B01] or [B02], wherein the same potential is applied to the 2a electrode, the 2b electrode, and the 2c electrode.

[0349] [B04] The light emitting element unit according to any one of [B01] to [B03], wherein each of the 2a-th electrode and the 2b-th electrode has a laminated structure of a transparent conductive layer and a semi-transmissive conductive layer.

[0350] [B05] The light emitting element unit according to [B04], wherein the transparent conductive layer contains an oxide of indium and zinc (IZO).

[0351] [B06] The light emitting element unit according to [B04] or [B05], wherein the semi-transmissive conductive layer contains an alloy of magnesium and silver.

[0352] [B07] The light-emitting element unit according to any one of [B01] to [B03], wherein the 2c-th electrode contains an alloy of magnesium and silver.

[0353] [B08] The light emitting element unit according to any one of [B01] to [B03], wherein the structures of the 2a electrode and the 2b electrode are different from the structure of the 2c electrode.

[0354] [B09] A light-emitting element unit according to any one of [B01] to [B06], wherein, in a third light-emitting element, light emitted in the third light-emitting layer resonates between a 1c interface consisting of an interface between a 1c electrode and a third organic layer or a third light reflecting layer and a 2c interface consisting of an interface between a 2c electrode and the third organic layer, and a portion of the resonant light is emitted from the 2c electrode.

[0355] [B10] The light emitting element unit according to [B09], wherein:

[0356] When the distance from the maximum emission position of the third light-emitting layer to the 1c interface is L 1C Indicated by OL, its optical distance 1C The distance from the maximum emission position of the third light-emitting layer to the 2c interface is represented by L 2C Indicated by OL, its optical distance2C Indicates that, and m 1C and m 2C When it represents an integer, it satisfies the following formulae (C-1), (C-2), (C-3), and (C-4).

[0357] 0.7{-Φ 1C / (2π)+m 1C}≤2×OL 1C / λ C ≤1.2{-Φ 1C / (2π)+m 1C}(C-1)

[0358] 0.7{-Φ 2C / (2π)+m 2C}≤2×OL 2C / λ C ≤1.2{-Φ 2C / (2π)+m 2C (C-2)

[0359] L 1C <L 2C (C-3)

[0360] m 1C <m 2C (C-4)

[0361] here,

[0362] λ C : Maximum peak wavelength of the spectrum of light generated in the third light-emitting layer (or desired wavelength of light generated in the third light-emitting layer)

[0363] Φ 1C : Phase shift of light reflected from the 1c interface (unit: radian)

[0364] Assume that -2π<Φ 1C ≤0.

[0365] Φ 2C : Phase shift of light reflected from the 2c interface (unit: radian)

[0366] Assume that -2π<Φ 2C ≤0.

[0367] [B11] The light emitting element unit according to [B10], wherein m satisfies 1C = 0 and m 2C =1.

[0368] [C01] "Light-emitting element unit: third aspect"

[0369] A light emitting element unit comprising three light emitting elements, wherein:

[0370] The first light-emitting element is obtained by laminating the first electrode 1a, the first organic layer including the first light-emitting layer, and the second electrode 2a,

[0371] a second light-emitting element obtained by laminating a first organic layer, a 1b electrode, a second organic layer including a second light-emitting layer, and a 2b electrode, and

[0372] The third light-emitting element is obtained by laminating a first organic layer, a second organic layer, a 1c electrode, a third organic layer including a third light-emitting layer, and a 2c electrode.

[0373] [C02] The light emitting element unit according to [C01], wherein the 2a electrode, the 2b electrode, and the 2c electrode are all composed of a common second electrode.

[0374] [C03] The light-emitting element unit according to [C01] or [C02], wherein the same potential is applied to the 2a electrode, the 2b electrode, and the 2c electrode.

[0375] [C04] The light emitting element unit according to any one of [C01] to [C03], wherein the 2a electrode, the 2b electrode, and the 2c electrode each have a laminated structure of a transparent conductive layer and a semi-transmissive conductive layer.

[0376] [C05] The light-emitting element unit according to [C04], wherein the transparent conductive layer contains an oxide of indium and zinc (IZO).

[0377] [C06] The light emitting element unit according to [C04] or [C05], wherein the semi-transmissive conductive layer contains an alloy of magnesium and silver.

[0378] [C07] The light-emitting element unit according to any one of [C01] to [C06], wherein

[0379] In the first light-emitting element, light emitted in the first light-emitting layer resonates between the 1a interface consisting of the interface between the 1a electrode and the first organic layer or the first light-reflecting layer and the 2a interface consisting of the interface between the 2a electrode and the first organic layer, and a part of the resonant light is emitted from the 2a electrode.

[0380] In the second light-emitting element, light emitted in the second light-emitting layer resonates between the 1b interface consisting of the interface between the 1b electrode and the second organic layer or the second light-reflecting layer and the 2b interface consisting of the interface between the 2b electrode and the second organic layer, and a part of the resonant light is emitted from the 2b electrode, and

[0381] In the third light-emitting element, light emitted in the third light-emitting layer resonates between the 1c interface formed by the interface between the 1c electrode and the third organic layer or the third light reflecting layer, and the 2c interface formed by the interface between the 2c electrode and the third organic layer, and a portion of the resonant light is emitted from the 2c electrode.

[0382] [C08] The light emitting element unit according to [C07], wherein

[0383] When the distance from the maximum emission position of the first light-emitting layer to the 1a interface is L 1A Indicated by OL, its optical distance 1A The distance from the maximum emission position of the first light-emitting layer to the 2a interface is represented by L 2A Indicated by OL, its optical distance 2A Indicates that, and m 1A and m 2A When it represents an integer, it satisfies the following formulas (A-1), (A-2), (A-3), and (A-4),

[0384] When the distance from the maximum emission position of the second light-emitting layer to the 1b interface is L 1B Indicated by OL, its optical distance 1B The distance from the maximum emission position of the second light-emitting layer to the 2b interface is represented by L 2B Indicated by OL, its optical distance 2B Indicates that, and m 1B and m 2B When it represents an integer, it satisfies the following formulas (B-1), (B-2), (B-3), and (B-4), and

[0385] When the distance from the maximum emission position of the third light-emitting layer to the 1c interface is L 1C Indicated by OL, its optical distance 1C The distance from the maximum emission position of the third light-emitting layer to the 2c interface is represented by L 2C Indicated by OL, its optical distance 2C Indicates that, and m 1C and m 2C When it represents an integer, it satisfies the following formulae (C-1), (C-2), (C-3), and (C-4).

[0386] 0.7{-Φ 1A / (2π)+m 1A}≤2×OL 1A / λ A ≤1.2{-Φ 1A / (2π)+m 1A (A-1)

[0387] 0.7{-Φ2A / (2π)+m 2A}≤2×OL 2A / l A ≤1.2{-Φ 2A / (2π)+m 2A}(A-2)

[0388] L 1A <L 2A (A-3)

[0389] m 1A <m 2A (A-4)

[0390] 0.7{-Φ 1B / (2π)+m 1B}≤2×OL 1B / l B ≤1.2{-Φ 1B / (2π)+m 1B}(B-1)

[0391] 0.7{-Φ 2B / (2π)+m 2B}≤2×OL 2B / l B ≤1.2{-Φ 2B / (2π)+m 2B}(B-2)

[0392] L 1B <L 2B (B-3)

[0393] m 1B <m 2B (B-4)

[0394] 0.7{-Φ 1C / (2π)+m 1C}≤2×OL 1C / l C ≤1.2{-Φ 1C / (2π)+m 1C}(C-1)

[0395] 0.7{-Φ 2C / (2π)+m 2C}≤2×OL 2C / l C ≤1.2{-Φ 2C / (2π)+m 2C}(C-2)

[0396] L 1C <L 2C (C-3)

[0397] m 1C <m 2C (C-4)

[0398] here,

[0399] λ A : Maximum peak wavelength of the spectrum of light generated in the first light-emitting layer (or the desired wavelength of light generated in the first light-emitting layer)

[0400] Φ 1A : Phase shift of light reflected from the 1a interface (unit: radian)

[0401] Assume that -2π<Φ 1A ≤0.

[0402] Φ 2A : Phase shift of light reflected from the 2a interface (unit: radian)

[0403] Assume that -2π<Φ 2A ≤0.

[0404] λ B : Maximum peak wavelength of the spectrum of light generated in the second light-emitting layer (or desired wavelength of light generated in the second light-emitting layer)

[0405] Φ 1B : Phase shift of light reflected from the 1b interface (unit: radian)

[0406] Assume that -2π<Φ 1B ≤0.

[0407] Φ 2B : Phase shift of light reflected from the 2b interface (unit: radian)

[0408] Assume that -2π<Φ 2B ≤0.

[0409] λ C : Maximum peak wavelength of the spectrum of light generated in the third light-emitting layer (or desired wavelength of light generated in the third light-emitting layer)

[0410] Φ 1C : Phase shift of light reflected from the 1c interface (unit: radian)

[0411] Assume that -2π<Φ 1C ≤0.

[0412] Φ 2C : Phase shift of light reflected from the 2c interface (unit: radian)

[0413] Assume that -2π<Φ 2C≤0.

[0414] [C09] The light emitting element unit according to [C08], wherein m satisfies 1A =0,m 2A =1,m 1B =0,m 2B =1,m 1C = 0, and m 2C =1.

[0415] [D01] "Light-emitting element unit: the fourth aspect"

[0416] A light emitting element unit including a plurality of light emitting elements having a laminated structure obtained by laminating a plurality of organic layers, each organic layer including a light emitting layer, wherein

[0417] Each light emitting element includes a first electrode, any one of a plurality of organic layers, and a second electrode, and

[0418] The first electrodes constituting the respective light emitting elements do not overlap with each other between the light emitting elements.

[0419] [E01] Organic electroluminescent display device

[0420] An organic electroluminescent display device obtained by arranging the light emitting element units according to any one of [A01] to [D01] in a two-dimensional matrix.

[0421] [E02]《Display Device》

[0422] A display device obtained by arranging the light emitting element units according to any one of [A01] to [D01] in a two-dimensional matrix.

[0423] Reference Mark List

[0424] 10 (10a, 10b, 10c) light emitting element

[0425] 10a First light emitting element

[0426] 10b Second light emitting element

[0427] 10c Third light emitting element

[0428] 21a Electrode 1a

[0429] 21b Electrode 1b

[0430] 21c 1c electrode

[0431] 22a Electrode 2a

[0432] 22b Electrode 2b

[0433] 22c 2c electrode

[0434] 22d Common second electrode (electrode 2a and electrode 2b)

[0435] 23a A first organic layer including a first light-emitting layer

[0436] 23b A second organic layer including a second light-emitting layer

[0437] 23c A third organic layer including a third light-emitting layer

[0438] 23d The first organic layer and the second organic layer

[0439] 24a, 24b Color filter

[0440] 25a, 25b, 25c Light reflecting layer

[0441] BM Black Matrix Layer

[0442] 31, 32, 33, 34, 35, 36, 37, 38 interlayer insulation layer

[0443] 41 First substrate

[0444] 42 Second substrate

[0445] 43 Insulation layer

[0446] 44 Protective film

[0447] 51a, 51b, 51c Gate electrodes

[0448] 52 Gate insulating film

[0449] 53 Silicon layer (semiconductor layer)

[0450] 54a, 54b, 54c Channel formation region

[0451] 55a, 55b, 55c Source / drain regions

[0452] 56a, 56b, 56c, 57b, 57c, 58c

[0453] 66, 67, 68, 69 Contact hole part

[0454] 59A, 59B insulating film.

Claims

1. A light emitting element unit comprising three light emitting elements, wherein: The first light-emitting element is obtained by laminating the first electrode 1a, the first organic layer including the first light-emitting layer, the second electrode 2a, the second organic layer including the second light-emitting layer, and the third organic layer including the third light-emitting layer, The second light emitting element is obtained by laminating the first organic layer, the 1b electrode, the second organic layer, the 2b electrode and the third organic layer, and A third light emitting element is obtained by laminating the first organic layer, the second organic layer, the 1c electrode, the third organic layer, and the 2c electrode; and In the first light-emitting element, light emitted from the first light-emitting layer resonates between the 1a interface formed by the first light-reflecting layer provided under the 1a electrode and the 2a interface formed by the interface between the 2a electrode and the first organic layer, and a part of the resonant light is emitted from the 2a electrode, In the second light-emitting element, light emitted from the second light-emitting layer resonates between a 1b interface constituted by a second light-reflecting layer provided under the 1b electrode and a 2b interface constituted by an interface between the 2b electrode and the second organic layer, and a portion of the resonant light is emitted from the 2b electrode, and In the third light-emitting element, light emitted from the third light-emitting layer resonates between a 1c interface formed by a third light-reflecting layer disposed below the 1c electrode and a 2c interface formed by an interface between the 2c electrode and the third organic layer, and a portion of the resonant light is emitted from the 2c electrode; In a cross-sectional view of the light emitting element unit, the 2a-th electrode, the 2b-th electrode, and the 2c-th electrode do not overlap with each other, and the 1a-th electrode, the 1b-th electrode, and the 1c-th electrode do not overlap with each other.

2. The light emitting element unit according to claim 1, wherein: The 2a electrode, the 2b electrode, and the 2c electrode are all composed of a common second electrode.

3. The light emitting element unit according to claim 1, wherein: The same potential is applied to the 2a electrode, the 2b electrode, and the 2c electrode.

4. The light emitting element unit according to claim 1, wherein: The 2a electrode, the 2b electrode, and the 2c electrode each have a laminated structure of a transparent conductive layer and a semi-transmissive conductive layer.

5. The light emitting element unit according to claim 4, wherein: The transparent conductive layer includes oxides of indium and zinc.

6. The light emitting element unit according to claim 4, wherein: The semi-transmissive conductive layer includes an alloy of magnesium and silver.

7. The light emitting element unit according to claim 1, wherein: When the distance from the maximum emission position of the first light-emitting layer to the first 1a interface is L 1A The optical distance from the maximum emission position of the first light-emitting layer to the first 1a interface is OL 1A Indicates that the distance from the maximum emission position of the first light-emitting layer to the second interface is L 2A Indicates that the optical distance from the maximum emission position of the first light-emitting layer to the second a interface is OL 2A Indicates that, and m 1A and m 2A When it represents an integer, it satisfies the following formulas (A-1), (A-2), (A-3), and (A-4), When the distance from the maximum emission position of the second light-emitting layer to the first interface is L 1B The optical distance from the maximum emission position of the second light-emitting layer to the first interface 1b is OL 1B Indicates that the distance from the maximum emission position of the second light-emitting layer to the second interface is L 2B The optical distance from the maximum emission position of the second light-emitting layer to the second interface b is OL 2B Indicates that, and m 1B and m 2B When it represents an integer, it satisfies the following formulas (B-1), (B-2), (B-3), and (B-4), and When the distance from the maximum emission position of the third light-emitting layer to the 1c interface is L 1C The optical distance from the maximum emission position of the third light-emitting layer to the 1c interface is OL 1C The distance from the maximum emission position of the third light-emitting layer to the 2c interface is represented by L 2C The optical distance from the maximum emission position of the third light-emitting layer to the second c interface is OL 2C Indicates that, and m 1C and m 2C When it represents an integer, it satisfies the following formulas (C-1), (C-2), (C-3), and (C-4): 0.7{-Φ 1A / (2π)+m 1A }≤2×OL 1A / l A ≤1.2{-Φ 1A / (2π)+m 1A }(A-1) 0.7{-Φ 2A / (2π)+m 2A }≤2×OL 2A / l A ≤1.2{-Φ 2A / (2π)+m 2A }(A-2) L 1A <L 2A (A-3) m 1A <m 2A (A-4) 0.7{-Φ 1B / (2π)+m 1B }≤2×OL 1B / l B ≤1.2{-Φ 1B / (2π)+m 1B }(B-1) 0.7{-Φ 2B / (2π)+m 2B }≤2×OL 2B / l B ≤1.2{-Φ 2B / (2π)+m 2B }(B-2) L 1B <L 2B (B-3) m 1B <m 2B (B-4) 0.7{-Φ 1C / (2π)+m 1C }≤2×OL 1C / l C ≤1.2{-Φ 1C / (2π)+m 1C }(C-1) 0.7{-Φ 2C / (2π)+m 2C }≤2×OL 2C / l C ≤1.2{-Φ 2C / (2π)+m 2C }(C-2) L 1C <L 2C (C-3) m 1C <m 2C (C-4) in, λ A : The maximum peak wavelength of the spectrum of light generated in the first light-emitting layer or the desired wavelength of light generated in the first light-emitting layer Φ 1A : Phase shift of the light reflected from the first interface (1a), unit: radian Assume that -2π<Φ 1A ≤0 Φ 2A : Phase shift of the light reflected from the 2a interface, unit: radian Assume that -2π<Φ 2A ≤0 λ B : The maximum peak wavelength of the spectrum of light generated in the second light-emitting layer or the desired wavelength of light generated in the second light-emitting layer Φ 1B : Phase shift of the light reflected from the 1b interface, unit: radian Assume that -2π<Φ 1B ≤0 Φ 2B : Phase shift of the light reflected from the 2b interface, unit: radian Assume that -2π<Φ 2B ≤0 λ C : The maximum peak wavelength of the spectrum of light generated in the third light-emitting layer or the desired wavelength of light generated in the third light-emitting layer Φ 1C : Phase shift of the light reflected from the first c interface, unit: radian Assume that -2π<Φ 1C ≤0 Φ 2C : Phase shift of the light reflected from the 2c interface, unit: radian Assume that -2π<Φ 2C ≤0.

8. The light emitting element unit according to claim 7, wherein: Meet m 1A =0,m 2A =1,m 1B =0,m 2B =1,m 1C = 0 and m 2C =1.

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