A high power laser light source output device

Abstract

A high-power laser light source output device belongs to the technical field of laser radar equipment, and comprises: a processing module for outputting a narrow pulse width, high frequency and large current signal; a semiconductor laser for receiving the current signal output by the processing module and emitting laser; the present invention adopts a modular design to effectively reduce the volume, and the processing module receives a large current driving signal of not less than 100 picoseconds. After passing through the processing module, the semiconductor laser can emit a light source signal with a half-height full width of 1 nanosecond, thereby achieving the output of a high-peak light source signal of 100 watts and a high-repetition-rate light source signal of tens of MHZ, thereby meeting the needs of long-distance measurement without increasing the input intensity of the current, thereby avoiding the influence of temperature on the stability and accuracy of the equipment, and further controlling the manufacturing cost.

Description

Technical Field

[0001] The present invention belongs to the technical field of laser radar equipment, and in particular relates to a high-power laser light source output device. Background Art

[0002] Lidar is a radar system that emits laser beams to detect the position, speed and other characteristic quantities of the target. In terms of working principle, there is no fundamental difference from microwave radar: a detection signal (laser beam) is emitted to the target, and then the received signal reflected from the target (target echo) is compared with the emitted signal. After appropriate processing, relevant information about the target can be obtained, such as target distance, direction, height, speed, attitude, and even shape parameters, so as to detect, track and identify targets such as aircraft and missiles.

[0003] Due to the limitation of high-power semiconductor lasers on the market, the scanning distance of LiDAR has always been a bottleneck. Even if the long-distance scanning power is achieved through stacking, the stacking method will increase the material cost of components and the eye safety cannot meet the standard. In order to meet the requirements of long-distance ranging, higher laser output power is required, but the increase in current leads to higher losses in the circuit and higher operating temperature of the laser. The higher the temperature, the lower the conversion efficiency of the laser, and the reliability will decrease, affecting the service life of the laser. Summary of the invention

[0004] The object of the present invention is to provide a high-power laser light source output device to solve the problems raised in the above-mentioned background technology.

[0005] To achieve the above object, the present invention provides the following technical solutions:

[0006] A high-power laser light source output device comprises: a processing module for outputting narrow pulse width, high frequency and large current signals; a semiconductor laser for receiving the current signal output by the processing module and emitting laser.

[0007] Furthermore, the processing module includes a switch tube circuit, an anti-reverse overshoot protection circuit and an energy storage capacitor discharge circuit.

[0008] Further, the energy storage capacitor discharge circuit includes a capacitor C6, a first end of the capacitor C6 and a first end of the resistor R6 and a first end of the resistor R7 are connected to a power supply, and a second end of the capacitor C6 is grounded, a second end of the resistor R7 and a second end of the resistor R6, a first end of the capacitor C4, a first end of the capacitor C3, a first end of the capacitor C2 and a first end of the capacitor C1 are connected, a second end of the capacitor C4 and a first end of the resistor R4, a second end of the capacitor C3 and a first end of the resistor R3, and a second end of the capacitor C3 and a second end of the capacitor C4, a second end of the capacitor C2 and a second end of the capacitor C1, a second end of the capacitor C2 and a first end of the resistor R2, a second end of the capacitor C1 and a first end of the resistor R1, and in addition, a second end of the resistor R4, a second end of the resistor R3, a second end of the resistor R2 and a second end of the resistor R1 are connected and grounded.

[0009] Further, the switch tube circuit includes an EPC2051 chip U3, the first pin of the EPC2051 chip U3 is connected to the external input end, and the second pin, the fifth pin and the sixth pin of the EPC2051 chip U3 are connected and grounded, in addition, the third pin, the fourth pin and the first end of the resistor R8 are connected, and the third pin of the EPC2051 chip U3 is connected to the second end of the capacitor C5 and the first end of the resistor R8; the second end of the resistor R8 is connected to the second end of the resistor R7.

[0010] Further, the anti-reverse overshoot protection circuit includes a resistor R5, a first end of the resistor R5 is connected to the 6th pin of the EPC2051 chip U3, and a second end of the resistor R5 is connected to a first end of a capacitor C5, a second end of the capacitor C5 is connected to the 3rd pin of the EPC2051 chip U3, the 2nd pin of the chip U1, and the positive electrode of the diode D1, and a negative electrode of the diode D1 is connected to the 1st pin of the chip U1 and the second end of the resistor R8.

[0011] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention adopts a modular design to effectively reduce the volume, and the processing module receives a large current driving signal of no less than 100 picoseconds. After passing through the processing module, the semiconductor laser can emit a light source signal with a half-height full width of 1 nanosecond, thereby achieving the output of a high-peak light source signal of hundreds of watts and a high-repetition-rate light source signal of tens of MHZ, thereby meeting the needs of long-distance measurement without increasing the input intensity of the current, thereby avoiding the influence of temperature on the stability and accuracy of the equipment, and further controlling the manufacturing cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a circuit diagram of the present invention;

[0013] Figure 2 It is the overall circuit framework diagram of the present invention; DETAILED DESCRIPTION

[0014] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0015] Example:

[0016] like Figure 2 A high-power laser light source output device shown includes a processing module 100 and a semiconductor laser 401, wherein the processing module 100 and the semiconductor laser 401 are electrically connected, and the processing module 100 is used to output a narrow pulse width, high frequency, and large current signal; the semiconductor laser 401 receives the narrow pulse width, high frequency current signal and emits a laser.

[0017] In this embodiment, the processing module 100 includes a switch tube circuit 101, an anti-reverse overshoot protection circuit 201 and an energy storage capacitor discharge circuit 301;

[0018] Combination Figure 1 As shown, the energy storage capacitor discharge circuit 301 includes a capacitor C6, a first end of the capacitor C6 and a first end of the resistor R6 and a first end of the resistor R7 are connected to a power supply, and a second end of the capacitor C6 is grounded, a second end of the resistor R7 and a second end of the resistor R6, a first end of the capacitor C4, a first end of the capacitor C3, a first end of the capacitor C2 and a first end of the capacitor C1 are connected, a second end of the capacitor C4 and a first end of the resistor R4 are connected, a second end of the capacitor C3 and a first end of the resistor R3 are connected, and a second end of the capacitor C3 and a second end of the capacitor C4 are connected, a second end of the capacitor C2 and a second end of the capacitor C1 are connected, and a second end of the capacitor C2 and a first end of the resistor R2 are connected, and a second end of the capacitor C1 and a first end of the resistor R1 are connected, and in addition, a second end of the resistor R4, a second end of the resistor R3, a second end of the resistor R2 and a second end of the resistor R1 are connected and grounded.

[0019] The switch tube circuit 101 includes an EPC2051 chip U3, wherein the first pin of the EPC2051 chip U3 is connected to an external input terminal, and the second pin, the fifth pin and the sixth pin of the EPC2051 chip U3 are connected and grounded. In addition, the third pin and the fourth pin of the EPC2051 chip U3 are connected to the first end of the resistor R8, and the third pin of the EPC2051 chip U3 is connected to the second end of the capacitor C5, the first end of the resistor R8 and the positive electrode of the diode D1; the second end of the resistor R8 and the negative electrode of the diode D1 are connected to the second end of the resistor R7. It is worth noting that the switch tube circuit 101 receives a narrow pulse width and large current signal of hundreds of picoseconds, and the signal amplitude needs to reach 5V, and the function of the resistor R8 is to pre-charge the switch tube circuit 101, speed up the opening speed of the switch tube circuit 101, and improve the rising edge.

[0020] The semiconductor laser 401 adopts the SPL_DS90A3 chip U1.

[0021] The anti-reverse overshoot protection circuit 201 includes a resistor R5, a first end of the resistor R5 is connected to the 6th pin of the EPC2051 chip U3, and a second end of the resistor R5 is connected to the first end of the capacitor C5, the second end of the capacitor C5 is connected to the 3rd pin of the EPC2051 chip U3, the 2nd pin of the SPL_DS90A3 chip U1, and the positive electrode of the diode D1, and the negative electrode of the diode D1 is connected to the 1st pin of the SPL_DS90A3 chip U1 and the second end of the resistor R8; its function is that when the switch tube circuit 101 is turned off, due to the parasitic inductance of the circuit, the 2nd pin of the semiconductor laser 401, that is, the cathode of the semiconductor laser 401, will have a relatively high overshoot voltage, and the voltage can be released through the RC circuit composed of C5 and R5 and the reverse diode D1, so as to protect the diode of the semiconductor laser 401.

[0022] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first" and "second" are used only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "several" means two or more. In addition, the term "including" and any variation thereof are intended to cover non-exclusive inclusions.

[0023] The present invention is described according to the embodiments. Without departing from the principle, the present device can also be modified and improved. It should be pointed out that any technical solution obtained by equivalent replacement or equivalent transformation falls within the protection scope of the present invention.

Claims

1. A high-power laser light source output device, characterized in that: include: A processing module (100), used to output a narrow pulse width, high frequency, and high current signal; A semiconductor laser (401) is used to receive a current signal output by a processing module (100) and emit laser light, wherein the semiconductor laser (401) uses a SPL_DS90A3 chip U1; the processing module (100) comprises a switch tube circuit (101), an anti-reverse overshoot protection circuit (201) and an energy storage capacitor discharge circuit (301); the energy storage capacitor discharge circuit (301) comprises a capacitor C6, a first end of the capacitor C6 and a first end of a resistor R6 and a first end of a resistor R7 are connected to a power supply, and a second end of the capacitor C6 is grounded. The second end of the resistor R7 is connected to the second end of the resistor R6, the first end of the capacitor C4, the first end of the capacitor C3, the first end of the capacitor C2, and the first end of the capacitor C1. The second end of the capacitor C4 is connected to the first end of the resistor R4, the second end of the capacitor C3 is connected to the first end of the resistor R3, and the second end of the capacitor C3 is connected to the second end of the capacitor C4. The second end of the capacitor C2 is connected to the second end of the capacitor C1, and the second end of the capacitor C2 is connected to the first end of the resistor R2. The second end of the capacitor C1 is connected to the first end of the resistor R1. In addition, the resistor R The second end of the resistor R4, the second end of the resistor R3, the second end of the resistor R2 and the second end of the resistor R1 are connected and grounded; the switch tube circuit (101) comprises an EPC2051 chip U3, the first pin of the EPC2051 chip U3 is connected to the external input terminal, and the second pin, the fifth pin and the sixth pin of the EPC2051 chip U3 are connected and grounded; in addition, the third pin and the fourth pin of the EPC2051 chip U3 are connected to the first end of the resistor R8, and the third pin of the EPC2051 chip U3 is connected to the second end of the capacitor C5, the fifth pin and the sixth pin of the EPC2051 chip U3 are connected and grounded; The first end of the resistor R8 is connected; the second end of the resistor R8 is connected to the second end of the resistor R7; the anti-reverse overshoot protection circuit (201) comprises a resistor R5, the first end of the resistor R5 is connected to the 6th pin of the EPC2051 chip U3, and the second end of the resistor R5 is connected to the first end of the capacitor C5, the second end of the capacitor C5 is connected to the 3rd pin of the EPC2051 chip U3, the 2nd pin of the chip U1, and the positive electrode of the diode D1, and the negative electrode of the diode D1 is connected to the 1st pin of the chip U1 and the second end of the resistor R8.

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