Manufacturing equipment for semiconductor devices

Abstract

A manufacturing apparatus for a semiconductor device, the manufacturing apparatus comprising: a rotating chuck configured to fix and rotate a wafer; a nozzle configured to spray a chemical reagent toward the wafer; a lateral displacement sensor configured to measure a displacement change of a side surface of the wafer while the rotating chuck is being rotated; and a controller configured to control a position of the nozzle by using the displacement change while the rotating chuck is being rotated.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the entirety of Korean Patent Application No. 10-2019-0077677, entitled “Manufacturing Apparatus for Semiconductor Device” filed on June 28, 2019, in the Korean Intellectual Property Office, which is incorporated herein by reference. Technical Field

[0003] Embodiments relate to a manufacturing apparatus for a semiconductor device. Background Art

[0004] In the manufacturing process of semiconductor devices, a spin coating device can be used to form a coating film such as a photoresist or a planarization film on a wafer. The spin coating device can mount and fix the wafer on a rotating chuck, and then evenly coat the coating film on the surface of the wafer by rotating the wafer at a high speed. Summary of the invention

[0005] An embodiment can be implemented by providing a manufacturing apparatus for a semiconductor device, the manufacturing apparatus comprising: a rotating chuck configured to fix and rotate a wafer; a nozzle configured to spray a chemical reagent toward the wafer; a lateral displacement sensor configured to measure a displacement change to a side surface of the wafer while the rotating chuck is being rotated; and a controller configured to control a position of the nozzle by using the displacement change while the rotating chuck is being rotated.

[0006] An embodiment can be implemented by providing a manufacturing equipment for a semiconductor device, the manufacturing equipment comprising: a rotating chuck configured to fix and rotate a wafer; a nozzle configured to spray a chemical reagent toward the wafer; a robot arm configured to fix the nozzle and drive in a horizontal direction and a vertical direction relative to a top surface of the wafer; and a lateral displacement sensor configured to measure a displacement change to a side surface of the wafer and a height change to the side surface of the wafer while the rotating chuck is being rotated, wherein the robot arm is configured to control the position of the nozzle to correspond to the displacement change and the height change measured by the lateral displacement sensor.

[0007] An embodiment can be implemented by providing a manufacturing apparatus for a semiconductor device, the manufacturing apparatus comprising: a rotating chuck configured to fix and rotate a wafer having a photoresist thereon; a nozzle configured to spray a rinsing liquid toward the photoresist on an edge of the wafer; a robot arm configured to fix the nozzle and drive in a horizontal direction relative to a top surface of the wafer; and a lateral displacement sensor configured to measure a displacement change to a side surface of the wafer while the rotating chuck rotates, wherein the robot arm is configured to control a position of the nozzle to correspond to the displacement change measured by the lateral displacement sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Features will become apparent to those skilled in the art by describing exemplary embodiments in detail with reference to the accompanying drawings, in which:

[0009] Figure 1 A schematic configuration diagram of a manufacturing apparatus for a semiconductor device according to some exemplary embodiments is shown.

[0010] Figure 2 and Figure 3 Shows Figure 1 Schematic diagram of the lateral displacement sensor.

[0011] Figure 4 An exemplary graph showing the displacement of a side surface of a wafer versus time as the wafer is rotated is shown.

[0012] Figure 5 and Figure 6 Shows Figure 1 Schematic diagram of the position movement of the nozzle.

[0013] Figure 7 An exemplary graph showing the change in nozzle position with respect to time as the wafer is rotated is shown.

[0014] Figure 8 and Fig. 9 A schematic diagram of a manufacturing apparatus for a semiconductor device including a magnetically suspended spindle motor according to some exemplary embodiments is shown.

[0015] Figures 10 to 16 A schematic diagram of a manufacturing apparatus for a semiconductor device including a two-dimensional displacement sensor according to some exemplary embodiments is shown.

[0016] Fig.17 A graph representing changes in displacement learned by a manufacturing device with respect to time is shown, according to some exemplary embodiments.

[0017] Fig.18 and Fig.19 A schematic diagram of a manufacturing apparatus for a semiconductor device according to some exemplary embodiments is shown.

[0018] Fig. 20 and Fig.21 A schematic diagram of a manufacturing apparatus for a semiconductor device according to some exemplary embodiments is shown.

[0019] Fig. 22 and Fig.23 A schematic diagram of a manufacturing apparatus for a semiconductor device according to some exemplary embodiments is shown. DETAILED DESCRIPTION

[0020] In the following, reference will be made to Figures 1 to 23 A manufacturing apparatus for a semiconductor device according to some example embodiments will be described.

[0021] Figure 1 A schematic configuration diagram of a manufacturing apparatus or device for a semiconductor device according to some exemplary embodiments is shown. Figure 2 and Figure 3 Shows Figure 1 Schematic diagram of the lateral displacement sensor. Figure 4 An exemplary graph showing the displacement of a side surface of a wafer versus time as the wafer is rotated is shown. Figure 5 and Figure 6 Shows Figure 1 Schematic diagram of the position movement of the nozzle. Figure 7 An exemplary graph showing the change in nozzle position with respect to time as the wafer is rotated is shown.

[0022] Reference Figure 1 , a manufacturing apparatus for a semiconductor device according to some example embodiments may include a spin chuck 100 , a lateral displacement sensor 200 , a sprayer 300 , and a controller 400 .

[0023] The wafer W may be provided on the spin chuck 100 (e.g., may be accommodated on or by the spin chuck 100). The spin chuck 100 may fix and rotate the provided wafer W. For example, the spin chuck 100 may fix the wafer W by using vacuum pressure or electrostatic force, and may rotate the fixed wafer W at a predetermined RPM.

[0024] In an embodiment, the spin chuck 100 may rotate the wafer W at a high speed. For example, the spin chuck 100 may rotate the wafer W at several hundreds to several thousands of RPM or higher.

[0025] The sprayer 300 may be driven to spray a chemical agent onto the wafer W. For example, the sprayer 300 may include a nozzle 310 and a robot arm 320 .

[0026] The nozzle 310 may spray a chemical reagent onto the wafer W (which is fixed on the spin chuck 100). The chemical reagent may include a material used to manufacture a semiconductor device. In an embodiment, the chemical reagent may include, for example, a photoresist composition (for forming a photoresist), a rinse solution for removing the photoresist or the photoresist composition, a planarization material, etc.

[0027] In an embodiment, the nozzle 310 may spray the chemical reagent onto the top surface of the wafer W. In an embodiment, the nozzle 310 may spray the chemical reagent not only onto the top surface of the wafer W but also onto the bottom surface of the wafer W. In an embodiment, the nozzle 310 may spray the chemical reagent only onto the bottom surface of the wafer W.

[0028] The robot arm 320 may move the position of the nozzle 310. For example, the nozzle 310 may be fixed to one end of the robot arm 320. The robot arm 320 may be driven to move the position of the fixed nozzle 310.

[0029] In an embodiment, the machine 320 may be driven in the horizontal direction X1, X2 and / or the vertical direction Z1, Z2 to move the position of the nozzle 310. Here, the horizontal direction X1, X2 refers to a direction horizontal to the top surface of the wafer W, and the vertical direction Z1, Z2 refers to a direction intersecting the top surface of the wafer W.

[0030] In an embodiment, the sprayer 300 may include a piezoelectric actuator. The piezoelectric actuator is an actuator that uses the inverse piezoelectric effect and can accurately control a small displacement at high speed by applying an electric field. For example, the sprayer 300 including the piezoelectric actuator can accurately control the nozzle 310 to draw a Lissajous curve at high speed. Fig.16 The nozzle 310 for plotting the Lissajous curve will be described in more detail with reference to the accompanying drawings.

[0031] The lateral displacement sensor 200 may be located above the side surface of the wafer W. For example, the lateral displacement sensor 200 may be spaced apart from the side surface of the wafer W by a predetermined distance. In an embodiment, the lateral displacement sensor 200 may measure displacement to the side surface of the wafer W.

[0032] In an embodiment, the lateral displacement sensor 200 may measure the displacement to the side surface of the wafer W by projecting light toward the side surface of the wafer W. In an embodiment, the lateral displacement sensor 200 may include a laser displacement sensor. For example, the lateral displacement sensor 200 may include a light projector 210 and a light receiver 220.

[0033] The light projector 210 may project transmission light L1 toward a predetermined measurement region MR that is a portion of the side surface of the wafer W. The light projector 210 may include, for example, a light emitting element that generates the transmission light L1 and a control circuit that controls the light emitting element. In an embodiment, the light emitting element may include, for example, a laser diode.

[0034] The optical receiver 220 may receive the reflected light L2 reflected from the measurement region MR. The optical receiver 220 may include, for example, a light receiving element that receives the reflected light L2 and a circuit that controls the light receiving element. In an embodiment, the light receiving element may include, for example, a position sensitive device (PSD), a charge coupled device (CCD), or a complementary metal oxide semiconductor (CMOS).

[0035] For example, the lateral displacement sensor 200 may measure the displacement from the lateral displacement sensor 200 to the measurement region MR. In an embodiment, the lateral displacement sensor 200 may measure the displacement to the side surface of the wafer W by using various methods such as, for example, a triangulation principle method using triangulation, a time-of-flight (TOF) method using the time taken from light projection to light reception, a phase difference measurement method using the phase difference between the transmitted light L1 and the reflected light L2, a PN code type measurement method for measuring by using a result of calculating the correlation between the transmitted light L1 intensity-modulated by the PN code and the reflected light L2 obtained thereby.

[0036] In an embodiment, the light projector 210 and the light receiver 220 may be arranged in a vertical direction (e.g., relative to each other) perpendicular to the top surface of the wafer W. In an embodiment, the light projector 210 and the light receiver 220 may be arranged in a horizontal direction parallel to the top surface of the wafer W, or may be arranged in different directions.

[0037] The controller 400 may be connected to the sprayer 300 and the lateral displacement sensor 200. The controller 400 may control the position of the nozzle 310 of the sprayer 300 by using or based on the displacement measured by the lateral displacement sensor 200 while the wafer W is being rotated. This will be described below by Figures 2 to 7 for a more detailed description.

[0038] In an embodiment, the controller 400 may include, for example, a personal computer (PC), a desktop computer, a laptop computer, a computer workstation, a tablet PC, a server, a mobile computing device, or a combination thereof. In an embodiment, the mobile computing device may be implemented by using, for example, a mobile phone, a smart phone, an enterprise digital assistant (EDA), a digital still camera, a digital video camera, a portable multimedia player (PMP), a personal navigation device or a portable navigation device (PND), a mobile Internet device (MID), a wearable computer, an Internet of Things (IOT) device, an Internet of Everything (IOE) device, or an e-book.

[0039] Reference Figures 2 to 4 The lateral displacement sensor 200 may measure a displacement change ΔD of the side surface of the wafer W while the wafer W is rotated by the spin chuck 100 .

[0040] For ease of explanation, Figure 2 shows the viewpoint where the displacement between the lateral displacement sensor 200 and the side surface of the wafer W is the largest, Figure 3 1 shows a viewpoint where the displacement between the lateral displacement sensor 200 and the side surface of the wafer W is the smallest. For reference, Figure 2 and Figure 3 D0 in φ refers to the displacement between the lateral displacement sensor 200 and the side surface of the wafer W when the rotation axis RA of the wafer W and the central axis CA of the wafer W coincide with each other.

[0041] For example, when the wafer W is rotated by the rotary chuck 100, the rotation axis RA of the wafer W and the central axis CA of the wafer W may not be completely consistent or completely consistent with each other. In an embodiment, this may be attributed to, for example, a position change of a wafer carrier, a position change of a rotary chuck, a height change of a rotary chuck, a slope change of a rotary chuck, etc., which may be caused by the operation of a manufacturing equipment of a semiconductor device.

[0042] For example, the displacement between the lateral displacement sensor 200 and the side surface of the wafer W may change continuously as the wafer W rotates. For example, when the rotation axis RA of the wafer W and the central axis CA of the wafer W are not completely consistent with each other, the displacement change ΔD to the side surface of the wafer W may change continuously while the wafer W rotates. In this article, the displacement change ΔD may be defined as the change in the displacement between the lateral displacement sensor 200 and the side surface of the wafer W relative to D0.

[0043] In an embodiment, the central axis CA of the wafer W may be farther away from the lateral displacement sensor 200 than the rotation axis RA of the wafer W while the wafer W is being rotated. For example, the displacement D1 between the lateral displacement sensor 200 and the side surface of the wafer W may be greater than Figure 2 D0 shown in FIG. 1 is longer. For example, the displacement change ΔD can have a positive value. For example, in Figure 2 , the displacement change ΔD may be DD1, which is D1 minus D0.

[0044] In an embodiment, the central axis CA of the wafer W may be closer to the lateral displacement sensor 200 than the rotation axis RA of the wafer W while the wafer W is being rotated. For example, the displacement D2 between the lateral displacement sensor 200 and the side surface of the wafer W may be closer to the lateral displacement sensor 200 than the rotation axis RA of the wafer W. Figure 3 D0 shown in FIG. 1 is shorter. For example, the displacement change ΔD may have a negative value. For example, in Figure 2 , the displacement change ΔD may be -DD2, which is D2 minus D0.

[0045] In an embodiment, while the wafer W is being rotated, a displacement variation ΔD to the side surface of the wafer W may be provided to the controller 400. In an embodiment, the displacement variation ΔD may have a certain variation within a range of ±300 μm.

[0046] In an embodiment, while the wafer W is being rotated, the displacement variation ΔD to the side surface of the wafer W may vary in a sinusoidal function pattern. Figure 4 As shown in FIG. 1 , while the wafer W rotates, the displacement change ΔD can be plotted as a sinusoidal curve relative to time t.

[0047] In an embodiment, Figure 4 The period 1P of the sinusoidal curve may be the time for the wafer W to rotate once. Figure 2 shows a viewpoint where the displacement between the lateral displacement sensor 200 and the side surface of the wafer W is the largest, and Figure 4 The maximum value of the sinusoidal curve can be DD1. Figure 3 shows a viewpoint where the displacement between the lateral displacement sensor 200 and the side surface of the wafer W is minimal, and Figure 4 The minimum value of the sinusoidal curve can be -DD2.

[0048] Reference Figure 5 and Figure 6 , the position of the nozzle 310 may be moved based on the displacement change ΔD measured by the lateral displacement sensor 200 .

[0049] In an embodiment, the central axis CA of the wafer W may be farther away from the nozzle 310 than the rotation axis RA of the wafer W when the wafer W is rotated. Figure 5 As shown in FIG. 1 , the robot arm 320 may be driven in a horizontal direction X1 toward a central axis CA of the wafer W. For example, the nozzle 310 may move in the X1 direction and may spray a chemical agent onto the wafer W.

[0050] In an embodiment, the central axis CA of the wafer W may be closer to the nozzle 310 than the rotation axis RA of the wafer W when the wafer W is rotated. Figure 6 As shown in FIG. 1 , the robot arm 320 may be driven in a horizontal direction X2 away from the central axis CA of the wafer W. For example, the nozzle 310 may move in the X2 direction and may spray a chemical agent onto the wafer W.

[0051] In an embodiment, the controller 400 may control the position of the nozzle 310 to correspond to the displacement change ΔD provided by the lateral displacement sensor 200. For example, the lateral displacement sensor 200 may measure the displacement change ΔD of the measurement region MR, and may provide the measurement result to the controller 400. Subsequently, when the measurement region MR is located below the nozzle 310, the controller 400 may move the position of the nozzle 310 as much as the displacement change ΔD of the measurement region MR. For example, when the displacement change ΔD falls within the range of ±300 μm, the movement amount of the position of the nozzle 310 may also fall within the range of ±300 μm.

[0052] In an embodiment, if Figure 2 As shown in FIG. 1 , the displacement change ΔD of the measurement region MR may be DD1. In this case, Figure 5 As shown in FIG. 1 , when the measurement region MR is located below the nozzle 310 , the nozzle 310 may be moved in the X1 direction by DD1 .

[0053] In an embodiment, if Figure 3 As shown in FIG. 1 , the displacement change ΔD of the measurement region MR may be −DD2. In this case, Figure 6 As shown in FIG. 1 , when the measurement region MR is located below the nozzle 310 , the nozzle 310 may be moved in the X2 direction by DD2 .

[0054] Therefore, in a manufacturing device for a semiconductor device according to some exemplary embodiments, the nozzle 310 can spray chemical reagents onto the wafer W while maintaining a constant distance from the side surface of the wafer W despite changes in the displacement of the side surface of the wafer W or regardless of changes in the displacement of the side surface of the wafer W.

[0055] In an embodiment, while the wafer W is being rotated, the movement amount Mx of the position of the nozzle 310 in the horizontal direction may vary in a sinusoidal function pattern. Figure 4 As shown in FIG. 1 , while the wafer W is being rotated, the displacement change ΔD can be plotted as a sinusoidal curve relative to time t. In this case, Figure 7 As shown in FIG. 1 , while the wafer W rotates, the movement amount Mx of the nozzle 310 in the horizontal direction may also draw a sine curve with respect to time t.

[0056] Figure 7 The period 1P of the sine curve can be expressed as Figure 4 The period of the sine curve is the same as 1P. For example, Figure 7 The period 1P of the sinusoidal curve may be the time for the wafer W to rotate once. As described above, the position of the nozzle 310 may be moved to correspond to the displacement change ΔD. For example, Figure 7The maximum value of the sinusoidal curve may be DD1, and the minimum value may be -DD2.

[0057] In an embodiment, the controller 400 may reflect the delay time t L To control the position of the nozzle 310. Delay time t L The predetermined time may be allocated by the controller 400 to accurately reflect the displacement change ΔD measured by the lateral displacement sensor 200 when the chemical sprayed from the positionally moved nozzle 310 is applied to the wafer W.

[0058] For example, the delay time t L It can reflect the time taken by the lateral displacement sensor 200 to measure the displacement of the measurement area MR, the time taken to calculate the displacement change ΔD on the measurement area MR, the time taken for the measurement area MR to be moved under the nozzle 310, the time taken to drive the robot arm 320, the time taken to spray chemical reagents from the nozzle 310, the time taken to coat the sprayed chemical reagents on the wafer W, etc.

[0059] In an embodiment, the lateral displacement sensor 200 may measure the displacement change ΔD after a predetermined delay time t L Then the position of the nozzle 310 is moved. For example, Figure 7 The sine curve can have Figure 4 The sine curve is shifted in the time t axis direction by a delay time t L The resulting shape.

[0060] In the manufacturing process of semiconductor devices, a semiconductor device manufacturing apparatus for coating chemical reagents on a high-speed rotating wafer may be used. However, due to problems that may exist in some devices, the chemical reagents may not be accurately or precisely sprayed on the desired points of the high-speed rotating wafer.

[0061] For example, when the manufacturing equipment for semiconductor devices is in operation, the wafer may not be accurately fixed to the rotary chuck due to position changes of the wafer carrier, position changes of the rotary chuck, height changes of the rotary chuck, tilt changes of the rotary chuck, etc. For example, the rotation axis of the wafer and the center axis of the wafer may not coincide with each other. For example, the position of the nozzle relative to the side surface of the wafer may continuously change while the wafer is rotated, and it may be difficult for the nozzle to accurately apply the chemical reagent to a desired point of the wafer.

[0062] The manufacturing equipment for semiconductor devices according to some exemplary embodiments can measure the displacement change to the side surface of the wafer W by using the lateral displacement sensor 200, and can move the position of the nozzle 310 to reflect the displacement change. For example, the manufacturing equipment for semiconductor devices according to some exemplary embodiments can spray chemical reagents onto the wafer W while maintaining a constant distance from the side surface of the wafer W by calibrating the displacement change ΔD of the side surface of the wafer W. For example, the manufacturing equipment for semiconductor devices according to some exemplary embodiments can compensate for the change in the position of the nozzle 310 relative to the desired spraying position on the wafer W in real time by continuously adjusting the position of the nozzle 310 in response to the wafer W position data from the lateral displacement sensor 200. For example, despite the displacement change ΔD of the side surface of the wafer W, the manufacturing equipment for semiconductor devices according to the embodiment can still help reduce or prevent defects in the manufactured semiconductor devices by accurately or precisely spraying chemical reagents onto the desired points of the wafer W.

[0063] Figure 8 and Fig. 9 A schematic diagram of a manufacturing apparatus for a semiconductor device including a magnetically suspended spindle motor according to some exemplary embodiments is shown. For ease of explanation, for the sake of brevity, the above reference will not be described or described as briefly as possible. Figures 1 to 7 The elements or operations described overlap elements or operations.

[0064] Reference Figures 1 to 7 as well as Figure 8 and Fig. 9 , in the manufacturing apparatus for a semiconductor device according to some exemplary embodiments, the spin chuck 100 may include a magnetic levitation spindle motor.

[0065] The spin chuck 100 including the magnetic levitation spindle motor may rotate to support the wafer W in a non-contact manner by using the principle of magnetic levitation. For example, as shown in the drawings, the wafer W may rotate while being spaced apart from the spin chuck 100 .

[0066] The spin chuck 100 including the magnetic levitation spindle motor may control the position of the wafer W. In an embodiment, the controller 400 may be connected to the spin chuck 100 . The controller 400 may control the position of the wafer W by controlling the spin chuck 100 including the magnetic levitation spindle motor.

[0067] In an embodiment, the controller 400 may make the rotation axis RA of the wafer W and the central axis CA of the wafer W coincide with each other by using the displacement variation ΔD provided by the lateral displacement sensor 200 .

[0068] For example, Figure 2As shown in FIG. 1 , the rotation axis RA of the wafer W and the central axis CA of the wafer W may not coincide with each other. In this case, Figure 8 As shown in FIG. 1 , the spin chuck 100 may move the wafer W by a distance Mw in the X2 direction. For example, the rotation axis RA of the wafer W and the central axis CA of the wafer W may coincide with each other.

[0069] In an embodiment, the position of the nozzle 310 may also be moved according to the movement of the wafer W. For example, the robot arm 320 may also be driven in the X2 direction according to the movement of the wafer W in the X2 direction. For example, the position of the nozzle 310 may be moved in the X2 direction. In an embodiment, the controller 400 may move the position of the nozzle 310 by the same amount as the movement Mw of the position of the wafer W. For example, the position change DD2 of the nozzle 310 may be the same as the movement Mw of the position of the wafer W.

[0070] In an embodiment, if Figure 3 As shown in FIG. 1 , the rotation axis RA of the wafer W and the central axis CA of the wafer W may not coincide with each other. In this case, Fig. 9 As shown in FIG. 1 , the spin chuck 100 may move the wafer W in the X1 direction by a distance Mw. For example, the rotation axis RA of the wafer W and the central axis CA of the wafer W may coincide with each other.

[0071] In an embodiment, the position of the nozzle 310 may also be moved according to the movement of the wafer W. For example, the robot arm 320 may also be driven in the X1 direction according to the movement of the wafer W in the X1 direction. Therefore, the position of the nozzle 310 may be moved in the X1 direction. In an embodiment, the controller 400 may move the position of the nozzle 310 as much as the movement amount Mw of the position of the wafer W. For example, the position change DD1 of the nozzle 310 may be the same as the movement amount Mw of the position of the wafer W.

[0072] Figures 10 to 16 A schematic diagram of a manufacturing apparatus for a semiconductor device including a multi-dimensional (eg, two-dimensional) displacement sensor according to some exemplary embodiments is shown. For ease of explanation, for the sake of brevity, the above reference will not be described or described as briefly as possible. Figures 1 to 7 The elements or operations described overlap elements or operations.

[0073] Reference Figures 1 to 7 as well as Figures 10 to 16 In the manufacturing apparatus for a semiconductor device according to some example embodiments, the lateral displacement sensor 200 may include a multi-dimensional displacement sensor.

[0074] For ease of explanation, in the following, Fig.10 shows a viewpoint where the height of the side surface of the wafer W on the measurement region MR is the highest, Fig.11The viewpoint at which the height of the side surface of the wafer W on the measurement region MR is the lowest is shown. Fig.10 and Fig.11 Omitting the displacement change to the side surface of the wafer W (eg, Figure 2 and Figure 3 Description of ΔD).

[0075] The lateral displacement sensor 200 including the multi-dimensional displacement sensor may project a linear transmission light L1 and may receive a linear reflection light L2. In an embodiment, as shown in the drawings, the lateral displacement sensor 200 may project the transmission light L1 in the form of a line extending upward and downward and may receive the reflection light L2 obtained thereby. For example, the lateral displacement sensor 200 may measure not only a displacement change ΔD to the side surface of the wafer W, but also a height change ΔH of the side surface of the wafer W.

[0076] In an embodiment, the wafer W may be fixed to the rotary chuck 100 and rotated while tilting. In an embodiment, when the wafer W is rotated by the rotary chuck 100, the wafer W may be repeatedly tilted due to shaking. In an embodiment, this may be attributed to, for example, a position change of a wafer carrier, a position change of a rotary chuck, a height change of a rotary chuck, a tilt change of a rotary chuck, etc., which may be caused by the operation of a manufacturing apparatus for a semiconductor device.

[0077] For example, the height variation ΔH of the side surface of the wafer W may continuously change while the wafer W rotates. Herein, the height variation ΔH may be defined as a change in the height of the top surface of the edge of the wafer W relative to the height when the wafer W is not tilted. In an embodiment, the height variation ΔH of the wafer W may have a certain variation within a range of, for example, ±500 μm.

[0078] In an embodiment, while the wafer W is being rotated, the height of the side surface of the wafer W adjacent to the lateral displacement sensor 200 may increase. Fig.10 As shown in , the height of the side surface of the wafer W on the measurement region MR may increase by H1. For example, the height variation ΔH may have a positive value.

[0079] In an embodiment, while the wafer W is being rotated, the height of the side surface of the wafer W adjacent to the lateral displacement sensor 200 may be reduced. Fig.11 As shown in FIG. 1 , the height of the side surface of the wafer W on the measurement region MR may be reduced by H2. For example, the height variation ΔH may have a negative value.

[0080] In an implementation, while the wafer W is being rotated, a height variation ΔH of the side surface of the wafer W may be provided to the controller 400 .

[0081] In an embodiment, while the wafer W is being rotated, the height variation ΔH of the side surface of the wafer W may vary in a sinusoidal function pattern. Fig.12 As shown in FIG. 1 , while the wafer W is being rotated, the height variation ΔH may plot a sinusoidal curve with respect to time t.

[0082] In an embodiment, Fig.12 The period 1P' of the sinusoid can be expressed as Figure 4 The period of the sine curve is the same as 1P. For example, Fig.12 The period 1P' of the sinusoidal curve may be the time for the wafer W to rotate once. In an embodiment, Fig.12 The period 1P' of the sinusoidal curve may be different from the period 1P' of the sinusoidal curve according to the manufacturing equipment used for the semiconductor device. Figure 4 The period 1P of the sinusoidal curve is different. For example, Fig.12 The period 1P' of the sinusoidal curve may be shorter or longer than the time it takes for the wafer W to rotate once.

[0083] Fig.10 shows a viewpoint at which the height of the side surface of the wafer W is the highest, and Fig.12 The maximum value of the sinusoidal curve can be H1. Fig.11 shows a viewpoint where the height of the side surface of the wafer W is the lowest, and Fig.12 The minimum value of the sine curve can be -H2.

[0084] Reference Fig.13 and Fig.14 , the position of the nozzle 310 may be moved based on the height change ΔH measured by the lateral displacement sensor 200 .

[0085] In an embodiment, while the wafer W is being rotated, the height of the side surface of the wafer W adjacent to the lateral displacement sensor 200 may increase. Fig.13 As shown in FIG. 3 , the robot arm 320 can be driven upward in the vertical direction Z1. For example, the nozzle 310 can move in the Z1 direction and still spray the chemical reagent onto the wafer W accurately.

[0086] In an embodiment, while the wafer W is being rotated, the height of the side surface of the wafer W adjacent to the lateral displacement sensor 200 may be reduced. Fig.14 As shown in FIG. 3 , the robot arm 320 can be driven downward in the vertical direction Z2. For example, the nozzle 310 can move in the Z2 direction and still spray the chemical reagent onto the wafer W accurately.

[0087] For example, when the height variation ΔH falls within the range of ±500 μm, the movement amount of the position of the nozzle 310 may also fall within the range of ±500 μm.

[0088] In an implementation, in a manufacturing apparatus for a semiconductor device according to some exemplary embodiments, the nozzle 310 may spray a chemical agent onto the wafer W while maintaining a constant distance from the top surface of the wafer W despite a variation in the height of the side surface of the wafer W.

[0089] In an embodiment, the amount of movement Mz of the position of the nozzle 310 in the vertical direction may vary in a sinusoidal function pattern. Fig.12 As shown in FIG. 1 , while the wafer W is being rotated, the height change ΔH can be plotted as a sinusoidal curve relative to time t. Fig.15 As shown in FIG. 1 , while the wafer W is being rotated, the movement amount Mz of the position of the nozzle 310 in the vertical direction may also draw a sine curve with respect to time t.

[0090] Fig.15 The period 1P' of the sinusoid can be expressed as Fig.12 The period 1P' of the sine curve is the same. As described above, the position of the nozzle 310 can be moved to correspond to the height change ΔH. Therefore, Fig.15 The maximum value of the sine curve may be H1, and the minimum value may be -H2.

[0091] In an embodiment, the lateral displacement sensor 200 may measure the height change ΔH after a predetermined delay time t L Then the position of the nozzle 310 is moved. For example, Fig.15 The sine curve can have Fig.12 The sine curve is shifted in the time t axis direction by a delay time t L The resulting shape.

[0092] Reference Fig.16 , in the manufacturing apparatus for a semiconductor device according to some exemplary embodiments, the nozzle 310 may be moved so as to draw a Lissajous curve.

[0093] As described above, while the wafer W is being rotated, the movement amount Mx of the position of the nozzle 310 in the horizontal direction may vary in a sinusoidal function pattern, and the movement amount Mz of the position of the nozzle 310 in the vertical direction may also vary in a sinusoidal function pattern. For example, while the wafer W is being rotated, the nozzle 310 may move so as to draw a Lissajous curve on a plane including the horizontal directions X1, X2 and the vertical directions Z1, Z2.

[0094] Fig.16 Part (a), part (b), and part (c) of FIG. 3 show exemplary Lissajous curves drawn by the nozzle 310, respectively. For ease of explanation, Fig.16Part (a), part (b), and part (c) of FIG. 1 only show the period of the movement amount Mx of the position in the horizontal direction (for example, Figure 4 1P) and the period of the vertical movement amount Mz of the position (for example, Fig.12 In an embodiment, the period of the movement amount Mx of the position of the nozzle 310 in the horizontal direction (for example, Figure 4 1P) and the period of the movement amount Mz of the position of the nozzle 310 in the vertical direction (for example, Fig.12 The 1P') of each of the nozzles 310 may be different from each other. For example, the nozzle 310 may draw Fig.16 Part (a), Fig.16 Part (b) and Fig.16 Lissajous curves other than the Lissajous curve shown in part (c).

[0095] Fig.16 Part (a) shows a case where the phase of the movement amount Mx of the position in the horizontal direction is the same as the phase of the movement amount Mz of the position in the vertical direction. For example, the point where the displacement change ΔD is 0 and the point where the height change ΔH is 0 may coincide with each other. In this case, when the wafer W is being rotated, the nozzle 310 may repeat linear motion in the diagonal direction on the plane including the horizontal directions X1, X2 and the vertical directions Z1, Z2.

[0096] Fig.16 Part (b) of shows a case where the phase of the movement amount Mx of the position in the horizontal direction is different from the phase of the movement amount Mz of the position in the vertical direction. For example, when the displacement change ΔD is 0, the height change ΔH may not be 0. Alternatively, when the height change ΔH is 0, the displacement change ΔD may not be 0. In this case, when the wafer W is being rotated, the nozzle 310 may repeat an elliptical motion on a plane including the horizontal directions X1, X2 and the vertical directions Z1, Z2.

[0097] Fig.16 Part (c) shows a phase difference between the amount of movement Mx of the position in the horizontal direction and the amount of movement Mz of the position in the vertical direction by a period ( Figure 4 1P or Fig.12 In an embodiment, when the displacement change ΔD is 0, the position change ΔH may be H1 or -H2. In an embodiment, when the position change ΔH is 0, the displacement change ΔD may be DD1 or -DD2. In this case, when the wafer W is being rotated, the nozzle 310 may repeat a circular motion on a plane including the horizontal directions X1, X2 and the vertical directions Z1, Z2.

[0098] In an embodiment, the sprayer 300 may include a piezoelectric actuator to control the nozzle 310 that plots a Lissajous curve.

[0099] Fig.17 A graph showing a displacement change of a manufacturing device relative to time according to some exemplary embodiments is shown. For ease of explanation, for the sake of brevity, the above reference will not be described or described as briefly as possible. Figures 1 to 7 The elements or operations described overlap elements or operations.

[0100] Reference Figures 1 to 7 and Fig.17 , the manufacturing apparatus for semiconductor devices according to some exemplary embodiments may know the displacement change ΔD and may control the position of the nozzle 310. For ease of explanation, the displacement change ΔD will be mainly described below. In an embodiment, the manufacturing apparatus for semiconductor devices according to some exemplary embodiments may also know the height change ΔH.

[0101] For example, the controller 400 may obtain the displacement change ΔD relative to time t while the wafer W is rotated a predetermined number of times. Fig.17 As shown in FIG. 1 , the displacement change ΔD with respect to time t can be obtained while the wafer W is rotated three times.

[0102] In an embodiment, the controller 400 may measure the displacement change ΔD during a plurality of cycles (e.g., while the wafer W is rotated a predetermined number of times), may average the displacement change ΔD for each cycle, and may know the displacement change ΔD with respect to time t. For example, the controller 400 may average the displacement change ΔD for each rotation cycle.

[0103] For example, the displacement change ΔD measured by the lateral displacement sensor 200 with respect to time t may include noise. For example, the maximum value of the displacement change ΔD during the first period (0-1P) may be DD1a, the maximum value of the displacement change ΔD during the second period (1P-2P) may be DD1b different from DD1a, and the maximum value of the displacement change ΔD during the third period (2P-3P) may be DD1c different from DD1a and DD1b. Similarly, for example, the minimum value of the displacement change ΔD during the first period (0-1P) may be DD2a, the minimum value of the displacement change ΔD during the second period (1P-2P) may be DD2b different from DD2a, and the minimum value of the displacement change ΔD during the third period (2P-3P) may be DD2c different from DD2a and DD2b.

[0104] In this case, the controller 400 may provide the learned displacement change ΔD by averaging the displacement changes ΔD for the first period (0-1P), the second period (1P-2P), and the third period (2P-3P). For example, the maximum value of the learned displacement change ΔD may be the average value of DD1a, DD1b, and DD1c. Similarly, for example, the minimum value of the learned displacement change ΔD may be the average value of DD2a, DD2b, and DD2c.

[0105] Therefore, even when the displacement change ΔD with respect to time t includes noise, a displacement change ΔD with enhanced accuracy can be provided. For example, by measuring the displacement change ΔD with respect to a plurality of cycles, the non-repeatable runout (NRRO) can be reduced, and only the repeatable runout (RRO) can be retained. In addition, the errors of each cycle can be offset by averaging the displacement change ΔD with respect to each cycle. Therefore, a displacement change ΔD with minimal noise can be provided.

[0106] Fig.18 and Fig.19 A schematic diagram of a manufacturing apparatus for a semiconductor device according to some exemplary embodiments is shown. For ease of explanation, for the sake of brevity, the above reference will not be described or described as briefly as possible. Figures 1 to 7 The elements or operations described overlap elements or operations.

[0107] Reference Figures 1 to 7 as well as Fig.18 and Fig.19 , in the manufacturing apparatus for a semiconductor device according to some exemplary embodiments, the sprayer 300 may remove edge beads of the first coating film 10 .

[0108] For example, Fig.18 As shown in FIG. 1 , the first coating film 10 may be coated on the wafer W. In an embodiment, the first coating film 10 may include, for example, a photoresist composition.

[0109] In an embodiment, the robot arm 320 may control the position of the nozzle 310 so that the nozzle 310 sprays the chemical reagent toward the edge of the wafer W. Figures 1 to 17 The position of the control nozzle 310 is described, and a repeated detailed description thereof may be omitted here.

[0110] Therefore, if Fig.19As shown in FIG. 1 , the chemical reagent sprayed from the nozzle 310 toward the edge of the wafer W can uniformly remove the edge beads of the first coating film 10 coated on the wafer W. In an embodiment, the chemical reagent may include, for example, a rinsing liquid for removing the photoresist or the photoresist composition. In an embodiment, the depth RD of the edge beads of the first coating film 10 removed may be, for example, about 0.3 mm to about 0.8 mm. In an embodiment, the depth RD of the edge beads of the first coating film 10 removed may be, for example, about 1.0 mm to 1.2 mm.

[0111] In an embodiment, an anti-reflection film 20 may be interposed between the wafer W and the first coating film 10. The anti-reflection film 20 may, for example, help prevent diffuse reflection of light projected onto the wafer W. In an embodiment, the anti-reflection film 20 may help enhance the hydrophobicity of the first coating film 10. When the light projected onto the wafer W is an argon fluoride (ArF) light source, the thickness of the anti-reflection film 20 may be about 20 nm to about 30 nm. When the light projected onto the wafer W is an extreme ultraviolet (EUV) light source, the thickness of the anti-reflection film 20 may be about 40 nm to about 50 nm.

[0112] In an implementation, the edge bead of the first coating film 10 may be removed so that the edge of the anti-reflection film 20 is exposed.

[0113] In an embodiment, after removing the edge bead of the first coating film 10, the second coating film 30 may be formed on the first coating film 10. The second coating film 30 may be formed to cover the first coating film 10. The second coating film 30 may, for example, enhance the hydrophobicity of the first coating film 10. The thickness of the second coating film 30 may be, for example, about 80 nm to about 100 nm.

[0114] Fig. 20 and Fig.21 A schematic diagram of a manufacturing apparatus for a semiconductor device according to some exemplary embodiments is shown. For ease of explanation, for the sake of brevity, the above reference will not be described or described as briefly as possible. Figures 1 to 7 The elements or operations described overlap elements or operations.

[0115] Reference Figures 1 to 7 as well as Fig. 20 and Fig.21 , in the manufacturing apparatus for a semiconductor device according to some exemplary embodiments, the sprayer 300 may coat the first coating film 10 on the wafer W.

[0116] In an embodiment, the robot arm 320 can control the position of the nozzle 310 so that the nozzle 310 sprays the chemical reagent toward the central axis CA of the wafer W. Figures 1 to 17 The position of the control nozzle 310 is described, and thus a detailed description thereof is omitted here.

[0117] Therefore, if Fig.21 As shown in FIG. 1 , the chemical agent sprayed from the nozzle 310 toward the central axis CA of the wafer W may form a uniform first coating film 10 on the wafer W. In an embodiment, the chemical agent may include, for example, a photoresist composition.

[0118] Fig. 22 and Fig.23 A schematic diagram of a manufacturing apparatus for a semiconductor device according to some exemplary embodiments is shown. For ease of explanation, for the sake of brevity, the above reference will not be described or described as briefly as possible. Figures 1 to 7 The elements or operations described overlap elements or operations.

[0119] Reference Figures 1 to 7 as well as Fig. 22 and Fig.23 , in the manufacturing apparatus for a semiconductor device according to some exemplary embodiments, the sprayer 300 may remove the first coating film 10 coated on the rear surface of the wafer W.

[0120] For example, Fig. 22 As shown in FIG. 1 , the first coating film 10 may be coated on the rear surface of the wafer W. In an embodiment, the first coating film 10 may include, for example, a photoresist composition.

[0121] In an embodiment, the robot arm 320 may control the position of the nozzle 310 so that the nozzle 310 sprays the chemical reagent toward the edge of the rear surface of the wafer W. Figures 1 to 17 The position of the control nozzle 310 is described, and a repeated detailed description thereof is omitted here.

[0122] For example, Fig.23 , the chemical reagent sprayed from the nozzle 310 toward the edge of the wafer W can uniformly remove the first coating film 10 coated on the rear surface of the wafer W. In addition, the chemical reagent sprayed from the nozzle 310 toward the edge of the wafer W can accurately control the limit to remove the first coating film 10. In an embodiment, the chemical reagent may include, for example, a rinsing liquid that removes the photoresist or the photoresist composition.

[0123] By way of summary and review, on a wafer that has been spin-coated, edge beads may exist (generated by concentrating and solidifying the coating film on the edge of the wafer due to the centrifugal force caused by the interaction of the rotation of the wafer and the surface tension). Such edge beads on the wafer may cause defects in subsequent processes, such as refracting light during exposure to form patterns on the wafer, or generating particles due to contact with the box when the wafer is pulled into or out of the wafer storage box.

[0124] One or more embodiments may provide a manufacturing apparatus for a semiconductor device using a rotating wafer.

[0125] One or more embodiments may provide a manufacturing apparatus for a semiconductor device, which may help reduce or prevent defects of a manufactured semiconductor device by calibrating a displacement variation of a side surface of a rotating wafer and spraying a chemical agent.

[0126] Example embodiments have been disclosed herein, and although specific terms are employed, these specific terms are used and interpreted only in a general and descriptive sense and not for the purpose of limitation. In some cases, as will be apparent to one of ordinary skill in the art as of the time of filing this application, unless otherwise expressly noted, features, characteristics, and / or elements described in conjunction with a particular embodiment may be used alone or in combination with features, characteristics, and / or elements described in conjunction with other embodiments. Therefore, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention as set forth in the appended claims.

Claims

1. A manufacturing apparatus for a semiconductor device, the manufacturing apparatus comprising: a rotary chuck configured to hold and rotate the wafer; a nozzle configured to spray a chemical agent toward the wafer; a lateral displacement sensor spaced apart from a side surface of the wafer in a horizontal direction and configured to measure a displacement change from the lateral displacement sensor to the side surface of the wafer while the spin chuck is being rotated; as well as a controller configured to control a position of the nozzle by using the displacement change while the rotary chuck is being rotated, wherein the lateral displacement sensor is configured to measure a height change of a side surface of the wafer while the wafer is being rotated, and the controller is further configured to control the position of the nozzle in a vertical direction by using the height change, the height change being defined as a change in the height of a top surface of an edge of the wafer relative to a height when the wafer is not tilted, and moving the position of the nozzle after a predetermined delay time from the time when the lateral displacement sensor measures the height change, The controller is configured to measure the displacement change during multiple cycles, average the displacement change for each cycle to provide the displacement change known relative to time, and use the known displacement change to control the position of the nozzle relative to the time.

2. The manufacturing equipment according to claim 1, wherein: The lateral displacement sensor comprises a laser displacement sensor.

3. The manufacturing equipment according to claim 1, wherein: The lateral displacement sensor is configured to measure the displacement change to a predetermined measurement area, which is a portion of a side surface of the wafer.

4. The manufacturing equipment according to claim 3, wherein: When the predetermined measurement area is located below the nozzle as the wafer is rotated, the controller is configured to move the position of the nozzle by as much as the displacement change.

5. The manufacturing apparatus according to claim 1, wherein: The rotary chuck includes a magnetically suspended spindle motor, and The controller is configured to control the position of the wafer by controlling the magnetic levitation spindle motor.

6. The manufacturing equipment according to claim 5, wherein: The controller is configured to make a rotation axis of the wafer and a center axis of the wafer coincide with each other by using the displacement change.

7. A manufacturing apparatus for a semiconductor device, the manufacturing apparatus comprising: a rotary chuck configured to hold and rotate the wafer; a nozzle configured to spray a chemical agent toward the wafer; a robot arm configured to fix the nozzle and to be driven in a horizontal direction and a vertical direction relative to a top surface of the wafer; as well as a lateral displacement sensor spaced apart from the side surface of the wafer in a horizontal direction and configured to measure a displacement change from the lateral displacement sensor to the side surface of the wafer and a height change to the side surface of the wafer while the rotary chuck is being rotated, the height change being defined as a change in the height of a top surface of an edge of the wafer relative to a height when the wafer is not tilted, wherein the robot arm is configured to control the position of the nozzle to correspond to the displacement change and the height change measured by the lateral displacement sensor, and to move the position of the nozzle after a predetermined delay time from the time when the lateral displacement sensor measures the height change, and Wherein, the robot arm controls the position of the nozzle with respect to time based on the average value of the displacement changes measured during multiple cycles.

8. The manufacturing apparatus according to claim 7, wherein: The nozzle moves so as to draw a Lissajous curve on a plane including the horizontal direction and the vertical direction.

9. The manufacturing apparatus according to claim 7, wherein: The robot arm is configured to control the position of the nozzle so that the nozzle sprays the chemical agent toward the edge of the wafer.

10. The manufacturing apparatus according to claim 9, wherein: The wafer includes a coating film coated on a top surface thereof, and The robot arm is configured to control the position of the nozzle so that the nozzle removes an edge bead of the coating film.

11. The manufacturing apparatus according to claim 9, wherein: The wafer includes a coating film coated on a rear surface thereof, and The robot arm is configured to control the position of the nozzle so that the nozzle sprays the chemical agent toward the rear surface of the wafer.

12. The manufacturing apparatus according to claim 9, wherein: The chemical reagents include a rinse solution.

13. The manufacturing apparatus according to claim 7, wherein: The robot arm is configured to control the position of the nozzle so that the nozzle sprays the chemical agent toward the central axis of the wafer.

14. The manufacturing apparatus according to claim 13, wherein: The chemical reagents include a photoresist composition.

15. A manufacturing apparatus for a semiconductor device, the manufacturing apparatus comprising: a spin chuck configured to hold and spin a wafer having a photoresist thereon; a nozzle configured to spray a rinsing liquid toward the photoresist on an edge of the wafer; a robot arm configured to fix the nozzle and to be driven in a horizontal direction relative to a top surface of the wafer; as well as a lateral displacement sensor that is spaced apart from the side surface of the wafer in a horizontal direction and is configured to measure a displacement change from the lateral displacement sensor to the side surface of the wafer while the spin chuck is being rotated, wherein the robotic arm is configured to control the position of the nozzle to correspond to the displacement change measured by the lateral displacement sensor, wherein the robot arm is configured to be driven also in a vertical direction relative to a top surface of the wafer, the lateral displacement sensor is configured to measure a height change of a side surface of the wafer while the wafer is being rotated, the height change being defined as a change in the height of a top surface of an edge of the wafer relative to a height when the wafer is not tilted, and the robot arm is configured to control a position of the nozzle in the vertical direction based on the height change and to move the position of the nozzle after a predetermined delay time from a time when the lateral displacement sensor measures the height change, Wherein the robotic arm is configured to control the position of the nozzle with respect to time based on an average value of the displacement changes measured during multiple cycles.

16. The manufacturing apparatus according to claim 15, wherein: The rotary chuck includes a magnetically suspended spindle motor, and The magnetic levitation spindle motor is configured to make a rotation axis of the wafer and a central axis of the wafer coincide with each other by using the displacement change.

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