Heat treatment apparatus and heat treatment method

Abstract

The present invention relates to a heat treatment apparatus and a heat treatment method. The adverse effects caused by sublimates generated when heating a substrate are suppressed. A heat treatment apparatus that heats a substrate on which a coating film is formed in a processing container, the heat treatment apparatus having: a placement unit provided in the processing container for placing the substrate; a heating unit for heating the substrate placed on the placement unit; a suction pipe that communicates with a suction port formed in the placement unit, penetrates the placement unit and extends vertically downward; and a collection container provided in a suction path between the suction pipe and a suction mechanism, the collection container being configured to be provided directly below the placement unit in a plan view, connected to the suction pipe, and for collecting sublimates in the processing container.

Description

Technical Field

[0001] The present disclosure relates to a heat treatment apparatus and a heat treatment method. Background Art

[0002] Patent Document 1 discloses a heat treatment apparatus that heat-treats a coating film formed on a substrate. The heat treatment apparatus includes: a placement unit provided in a processing container for placing the substrate; a heating unit for heating the substrate placed on the placement unit; a gas supply port provided at a position outside the substrate on the placement unit in the circumferential direction when viewed from above for supplying gas into the processing container; an outer peripheral exhaust port provided at a position outside the substrate on the placement unit in the circumferential direction when viewed from above for exhausting the inside of the processing container; and a central exhaust port provided above the central portion of the substrate on the placement unit for exhausting the inside of the processing container.

[0003] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2016-115919 Summary of the Invention

[0004] Problems to be Solved by the Invention

[0005] The technology of the present disclosure suppresses the adverse effects caused by sublimates generated when heating the substrate.

[0006] Solutions to the Problems

[0007] A heat treatment apparatus according to one aspect of the present disclosure heats a substrate having a coating film formed thereon in a processing container. The heat treatment apparatus includes: a placement unit provided in the processing container for placing the substrate; a heating unit for heating the substrate placed on the placement unit; a suction pipe communicating with a suction port formed in the placement unit, passing through the placement unit and extending vertically downward; and a collection container provided in a suction path between the suction pipe and a suction mechanism. The collection container is configured to be provided directly below the placement unit when viewed from above, connected to the suction pipe, and for collecting sublimates in the processing container.

[0008] For the above heat treatment apparatus, it is also possible that the collection container is connected to the suction pipe and is detachable.

[0009] For the above heat treatment apparatus, it is also possible that a flow path for increasing the pressure loss when the airflow from the suction pipe flows through is provided in the collection container.

[0010] For the above-described heat treatment apparatus, alternatively, the collection container may have: a first space through which the airflow from the suction pipe first flows and where the pressure loss is relatively small; and a second space that communicates with the first space and has a relatively larger pressure loss compared to the first space.

[0011] For the above-described heat treatment apparatus, alternatively, the collection container may have: a plurality of connection ports that are connected to the plurality of suction pipes in a circumferentially arranged manner along the collection container; and a flow path that is spiral and is formed at a position on the central side of the plurality of connection ports within the collection container.

[0012] For the above-described heat treatment apparatus, alternatively, the heat treatment apparatus may have a lifting mechanism that raises and lowers the collection container to connect and disconnect between the collection container and the suction pipe.

[0013] For the above-described heat treatment apparatus, alternatively, the heat treatment apparatus may have a receiving portion that can place the collection container at a position where the collection container is in a state of being lowered from the position connected to the suction pipe and disconnected from the suction pipe.

[0014] For the above-described heat treatment apparatus, alternatively, the collection container may have a heating mechanism for heating the collection container.

[0015] For the above-described heat treatment apparatus, alternatively, the collection container may have a cooling portion for cooling the collection container.

[0016] For the above-described heat treatment apparatus, alternatively, the collection container may have a catalyst for decomposing the sublimated substance collected.

[0017] For the above-described heat treatment apparatus, alternatively, the heat treatment apparatus may include a gas supply port that is provided on the side of the substrate placed on the placement portion and supplies gas toward the space between the substrate and the placement portion.

[0018] For the above-described heat treatment apparatus, alternatively, the gas supply port may be provided at a position lower than the upper surface of the substrate placed on the placement portion.

[0019] For the above-described heat treatment apparatus, alternatively, a flow straightener extending toward the placement portion side may be provided above the gas supply port.

[0020] Regarding the above-described heat treatment apparatus, it may also be that the heat treatment apparatus further includes: a suction mechanism that performs suction; and a control unit that controls the suction mechanism to weaken the suction force in the later stage of heating the substrate.

[0021] A heat treatment method according to an aspect of the present disclosure heats a substrate in a state where the substrate having a coating film formed thereon is placed on a placement portion in a processing container, adsorbs and holds the substrate by suction from a suction port of the placement portion, and collects a sublimated substance generated during the heat treatment using a collection container disposed directly below the placement portion in a plan view in a suction path continuous from the suction port in the processing container.

[0022] Regarding the above-described heat treatment method, it may also be that the suction force from the suction port is weakened in the later stage of the heat treatment.

[0023] Regarding the above-described heat treatment method, it may also be that a dilution gas for reducing the concentration of the sublimated substance is supplied to a gap between the substrate being heat-treated and the placement portion.

[0024] Effects of the Invention

[0025] According to the present disclosure, it is possible to suppress adverse effects caused by a sublimated substance generated when heating a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is an explanatory view schematically showing a structure of the heat treatment apparatus according to the present embodiment as viewed from the side.

[0027] Figure 2 is in Figure 1 a plan view of a collection container used in the heat treatment apparatus.

[0028] Figure 3 is Figure 2 a side cross-sectional view of the collection container.

[0029] Figure 4 is Figure 2 a plan cross-sectional view of the collection container.

[0030] Figure 5 is a view showing Figure 1 the appearance of the heat treatment apparatus in a state where a wafer can be adsorbed and held.

[0031] Figure 6 is a view showing Figure 1 the appearance of the heat treatment apparatus when the state where a wafer can be adsorbed and held is released and the connection between the collection container and the suction pipe is released.

[0032] Figure 7 This is an explanatory diagram showing an example in which a heater is provided in a collection container.

[0033] Figure 8 This is an explanatory diagram showing an example in which a cooling plate is attached to the lower surface of a collection container.

[0034] Figure 9 This is an explanatory diagram schematically showing the structure of a heat treatment apparatus according to another embodiment as viewed from the side. Detailed Embodiment

[0035] Hitherto, various treatment liquids, such as a resist liquid for forming a pattern and an SOC for forming a hard mask for improving plasma resistance, have sometimes been applied to the surface of a semiconductor substrate, such as a semiconductor wafer (hereinafter sometimes also referred to as a "wafer"). After applying these treatment liquids, a heat treatment for heating the wafer is performed in a heat treatment apparatus. In order to ensure the uniformity of the coating film, such a heat treatment requires uniform heating of the target wafer, and usually, the target wafer is placed on a flat placement table or a hot plate for this purpose.

[0036] However, in recent years, for example, in the case of 3D-NAND type chips, multi-layer stacked devices have been mass-produced. However, when the number of stacked layers increases, the wafer itself sometimes warps during a series of processing steps. In a state where such warping has occurred, if the wafer is heat-treated on a hot plate, for example, it cannot be uniformly heated, which affects the uniformity of the film thickness.

[0037] Therefore, for example, when the wafer is placed on a hot plate or a placement table and heated, a process is performed in which the wafer is sucked and adsorbed to correct the warping of the wafer while the wafer is being heated.

[0038] However, when the treatment liquid applied to the target wafer is, for example, the above-mentioned SOC, a large amount of sublimates are sometimes generated during heating. At this time, the atmosphere in the treatment space is exhausted from above and around the wafer, but for the suction exhaust system that sucks the wafer, it is exhausted through a suction path penetrating the hot plate separately. In this case, in order to cause the suction exhaust system to suck with a high exhaust pressure, the suction path is often narrow. Therefore, the generated sublimates adhere to the inside of the suction path, and the wafer cannot be sucked and held with the desired suction pressure, and it may not be possible to correct the warping of the wafer. If the warping cannot be corrected, it is difficult to perform uniform heating, which affects the uniformity of the film thickness.

[0039] When the technology of the present disclosure adsorbs and holds a wafer with such warping on a placement part such as a hot plate and heats it, even if sublimates are generated, the sublimates are suppressed from adhering to the suction path and do not affect the suction.

[0040] Hereinafter, while referring to the drawings, Figure 1 the structure of the heat treatment apparatus of the present embodiment will be described. In addition, in this specification, elements having substantially the same functional structure are denoted by the same reference numerals, and redundant description is omitted.

[0041] Figure 1 The schematic structure of the heat treatment apparatus of the present embodiment is shown. As Figure 1 shown, the heat treatment apparatus of the embodiment of the present invention has a processing container 1. The processing container 1 has: a bottom structure body 2 constituting the bottom, a lid portion 3 constituting the top, and an annular gate 4 constituting the side surface. The processing container 1 is provided in a housing (not shown).

[0042] The bottom structure body 2 is supported on a base 5 of the housing (not shown) by a support member 6. The bottom structure body 2 has a support table 12 formed of a flat cylindrical body, and a recess is formed at a position inside the edge portion 11. A heating plate 13 serving as a placement portion for placing the wafer W is provided in the recess of the support table 12.

[0043] A heater 14 serving as a heating portion for heat-treating the placed wafer W is provided in the heating plate 13. In addition, three lifting pins 15 for transferring the wafer W between the processing container 1 and a conveying device (not shown) outside the processing container 1 are provided at equal intervals in the circumferential direction, for example. The lifting pins 15 are configured to be able to be lifted by a lifting mechanism 16 provided on the base 5 and protrude above the heating plate 13.

[0044] The lid portion 3 is formed of a disk-shaped member having a diameter larger than that of the bottom structure body 2. The lid portion 3 is supported on the top surface of the housing (not shown). The lid portion 3 has a size such that its outer edge is located outside the outer edge of the bottom structure body 2 when viewed from above. The lid portion 3 has a hollow shape, and a flat cylindrical exhaust chamber 3c is formed between the upper surface portion 3a and the lower surface portion 3b.

[0045] The exhaust chamber 3c is set such that its outer edge is formed at a position substantially the same as the outer edge of the bottom structure body 2. A plurality of outer peripheral exhaust ports 3d communicating with the exhaust chamber 3c are formed at equal intervals in the circumferential direction in the peripheral portion of the lower surface portion 3b. The outer peripheral exhaust ports 3d are opened at positions outside the outer edge of the wafer W placed on the heating plate 13.

[0046] An outer peripheral exhaust pipe 21 communicating with the exhaust chamber 3c is connected to the upper surface portion 3a of the lid portion 3 above the exhaust chamber 3c. When the lid portion 3 side is set as the upstream side, a valve V1 and a flow rate adjustment portion 22 are provided in the outer peripheral exhaust pipe 21 from the upstream side, and it is connected to a factory exhaust system provided in the factory.

[0047] In addition, a central exhaust port 3e is formed at the center of the lower surface portion 3b of the lid portion 3. The center of the central exhaust port 3e is opened so as to coincide with the center of the wafer W placed on the heating plate 13. The central exhaust port 3e is connected to one end side of a central exhaust pipe 23 provided so as to penetrate the exhaust chamber 3c. When the lid portion 3 side is set as the upstream side, a valve V2 and a flow rate adjusting portion 24 are provided in the central exhaust pipe 23 from the upstream side, and it is connected to the factory exhaust system.

[0048] A ring-shaped shutter 4 as a shutter member is provided around the bottom structure 2, and the ring-shaped shutter 4 is used to block the periphery of the gap between the bottom structure 2 and the lid portion 3 to form a processing space. The ring-shaped shutter 4 has a structure with an annular hollow portion as a whole, and the ring-shaped shutter 4 has an outer shutter portion 4a and an inner shutter portion 4b, and an annular space 4c is formed between the outer shutter portion 4a and the inner shutter portion 4b.

[0049] On the upper side of the outer shutter portion 4a, inflow ports 4d communicating with the annular space 4c are formed at equal intervals in the entire circumferential range. On the lower side of the inner shutter portion 4b, supply ports 4e communicating with the annular space 4c are formed at equal intervals in the entire circumferential range. According to this structure, an inert gas, such as nitrogen, in the housing (not shown) accommodating the processing container 1 is uniformly supplied into the processing container 1.

[0050] The ring-shaped shutter 4 is supported by an annular plate 4f on the lower surface side, and the annular plate 4f moves up and down by a lifting mechanism 25 provided on the base 5. That is, as Figure 1 shown, the ring-shaped shutter 4 rises until the upper side of the inner shutter 4b abuts against the outer peripheral portion of the lower surface of the lid portion 3, and a processing space S is formed above the wafer W in the processing container 1. In addition, in order to send in and out the wafer W above the heating plate 13, when the ring-shaped shutter 4 descends, an entry / retreat space for a transfer device (not shown) for sending in and out the wafer W is formed.

[0051] In addition, in order to prevent sublimates from depositing on the inner wall surfaces of the respective exhaust chambers 3c, heaters (not shown) are embedded in the lid portion 3 and the wall of the processing container 1, and they are heated to a desired temperature, such as 300 °C.

[0052] For the heating plate 13, a plurality of, for example, eight suction ports 31 are formed at equal intervals on the peripheral portion of the upper surface. The suction ports 31 are connected to the upper end portions of cylindrical suction pipes 32 that penetrate through the respective heating plates 13 and the bottom structure 2. The lower end portions of the respective suction pipes 32 penetrate through the base 5 and are freely connected to a collection container 40 disposed below the base 5. The collection container 40 is located directly below the heating plate 13 in a plan view. An adiabatic member 33 is provided on the outer periphery of the portion where the suction pipe 32 penetrates through the base 5.

[0053] The collection container 40 is supported by a support table 51, and the support table 51 can move up and down freely by means of a lifting mechanism 52. In Figure 1 the state shown, the collection container 40 is located at the raised position by means of the lifting mechanism 52, that is, the connection position where the lower end of each suction pipe 32 is connected to the collection container 40. On the other hand, when the support table 51 is lowered by means of the lifting mechanism 52, the connection state between the lower end of each suction pipe 32 and the collection container 40 is released. A receiving portion 53 is disposed below the collection container 40. Therefore, when the support table 51 is lowered by means of the lifting mechanism 52, the collection container 40 can be placed only on the receiving portion 53.

[0054] Next, the detailed structure of the collection container 40 will be described. As Figure 2 、 Figure 3 shown, on the peripheral portion of the upper surface of the collection container 40, connection ports 41 that are hermetically connected to the lower ends of eight suction pipes 32 are formed at equal intervals in the circumferential direction.

[0055] As Figure 3 shown, inside the collection container 40, a first space 42 with a relatively small pressure loss is provided on the lower side, and a second space 43 with a relatively large pressure loss is formed on the upper side. The first space 42 has an annular space 42a located directly below each connection port 41.

[0056] On the other hand, the second space 43 is formed in the space surrounded by the bottom plate 44, the side wall 45, and the top plate 40a of the collection container 40. A spiral flow path 46 that extends spirally from the center to the outer peripheral side as Figure 4 shown is formed on the bottom plate 44. In addition, the first space 42 is formed by the bottom plate 40b, the bottom plate 44, and the side wall 45 of the collection container 40.

[0057] An inlet portion 47 that communicates with the flow path 46 is formed at the center of the bottom plate 44. On the other hand, an outlet portion 48 is formed at the terminal portion near the outer periphery of the flow path 46. Moreover, the outlet portion 48 is connected to a suction exhaust pipe 49 that extends to the outside of the collection container 40. The suction exhaust pipe 49 is freely connected to the valve V3. Moreover, when the collection container 40 is set as the upstream side, starting from the valve V3, the downstream side communicates with a suction mechanism 50 such as a jet aspirator or a blower. Therefore, by operating the suction mechanism 50, a continuous suction path is formed from the suction port 31, the suction pipe 32, the collection container 40 to the suction exhaust pipe 49, the valve V3, and the suction mechanism 50.

[0058] As Figure 1As shown, the heat treatment apparatus with the above structure controls various operations using a control unit 60 formed by a computer. More specifically, the control unit 60 has a program storage unit, and a program for giving instructions regarding the following is stored in the program storage unit: placing the wafer W on the heating plate 13 and lifting the wafer W from the heating plate 13 by lowering and raising the lifting pins 15, opening and closing the annular gate 4, heating by the heater 14, opening and closing the valves V1, V2, and V3, adjusting the flow rates of the flow rate adjustment units 22 and 24, raising and lowering the collection container 40, and operating the suction mechanism. This program can also be stored and loaded into the control unit 60 using storage media such as a floppy disk, optical disk, hard disk, MO (magneto-optical disk), or memory card, for example.

[0059] The heat treatment apparatus of the embodiment has the above structure. Next, its operations and the like will be described. In the pre-treatment of the heat treatment apparatus, for example, a coating liquid containing a precursor of a carbon film is applied to the wafer W to form an SOC film as a coating film. In a state where the annular gate 4 has been lowered, when the wafer W is moved above the heating plate 13 by a transfer device (not shown), the wafer W is transferred to the lifting pins 15 by the cooperative action between the transfer device and the lifting pins 15. At this time, the power of the heater 14 is controlled so that the surface temperature of the heating plate 13 becomes, for example, 350°C. At this time, the collection container 40 is in the raised position, that is, the connection port 41 on the upper surface of the collection container 40 is connected to the lower end of the suction pipe 32 as shown in Figure 1 shown by raising the collection container 40. This raised position is a state in which the wafer W can be suctioned.

[0060] Moreover, when the wafer W is placed on the heating plate 13, the valve V3 is opened, and the wafer W is suctioned from the suction port 31 and adsorbed and held on the heating plate 13. Thus, even for a warped wafer W, the warping can be corrected by the suction from the suction port 31, and the wafer W can be made flat. As a result, uniform heat treatment can be performed on the wafer W.

[0061] In addition, the suction pressure can be controlled by adjusting the suction pressure of the suction mechanism that performs suction, the opening degree of the valve V3, and the like. Thus, when suctioning the wafer, for example, at the initial stage of the heat treatment, the suction force is made relatively strong, and at the later stage of the heat treatment, it is considered that the SOC film has dried and solidified, so the suction force is made relatively weak, or suction itself can be stopped. In this way, the strength of the suction force and the operation itself can be controlled, thereby reducing the suction amount.

[0062] Moreover, when the wafer W is adsorbed and held on the heating plate 13, the annular shutter 4 rises, and the processing container 1 becomes a closed state, whereby the processing space S is partitioned and formed. Next, the valves V1 and V2 are opened, and the wafer W is heat-treated in a state where exhaust is performed from the central exhaust port 3e and the central exhaust pipe 23 and from the outer peripheral exhaust port 3d, the exhaust chamber 3c, and the outer peripheral exhaust pipe 21.

[0063] During the heat treatment, the volatilization of the solvent in the SOC film as the coating film on the wafer W is promoted, and the crosslinking reaction proceeds using the crosslinking agent in the coating film. During this period, the crosslinking agent and low molecular components in the coating film volatilize, but a large amount of sublimate is generated in the latter half of the heat treatment. A part of this sublimate is discharged from the central exhaust port 3e and the outer peripheral exhaust port 3d, but the remaining sublimate flows into the suction port 31 from the gap between the lower surface of the wafer W and the heating plate 13. This is because fine convex portions called gap pins and approach pins for creating fine voids are formed on the surface of the heating plate 13, and moreover, the suction force from the suction port 31 is greater than the exhaust from the central exhaust pipe 23 and the outer peripheral exhaust port 3d.

[0064] Then, as Figure 2 shown, the sublimate sucked into the suction pipe 32 from the suction port 31 flows into the first space 42 via the annular space 42a from the connection port 41 of the collection container 40. Next, it goes from the inlet portion 47 at the center of the bottom plate 44 in the second space 43 along the spiral flow path 46 toward the outer peripheral side, and is exhausted to the outside via the outlet portion 48 and the suction exhaust pipe 49.

[0065] According to the present embodiment, the collection container 40 is provided directly below the heating plate 13 in a plan view, and each suction pipe 32 is vertically connected to the collection container 40. Therefore, the gas flow containing the sublimate first collides with the bottom plate 40b in the collection container 40. Thus, a part of the sublimate in the gas flow is first precipitated and adhered to the bottom plate 40b due to inertial collision with the bottom plate 40b.

[0066] Next, the gas flow in the first space 42 flows in the spiral flow path 46 toward the inlet portion 47 provided at the center of the bottom plate 44 in the second space 43. The flow path 46 is formed in a spiral shape and has a relatively large pressure loss with respect to the first space 42. Therefore, the gas flow containing the sublimate is precipitated and adhered to the inside of the flow path 46 during the process of flowing through the flow path 46. Through such a process, most of the sublimate is collected by the collection container 40. Moreover, since the flow path 46 is formed in a spiral shape, the flow path itself can be ensured to be long in the limited space in the collection container 40, and the collection effect of the sublimate is high.

[0067] Therefore, it is possible to prevent the sublimates generated during the heat treatment from adhering to the suction port 31 with a relatively small diameter for sucking and holding the wafer W and the inside of the suction pipe 32, thereby preventing them from being blocked. Therefore, even when heat-treating a coating film that generates a large amount of sublimates such as an SOC film, the wafer W can be suitably adsorbed and held. Thus, even if the wafer W to be heat-treated is warped, it can be appropriately corrected to a flat state by the adsorption and holding by the suction port 31. Therefore, a uniform heat treatment can be performed on the warped wafer W.

[0068] In addition, in the above-described embodiment, the suction pipe 32 itself is connected to the heating plate 13 and is heated to a temperature close to the processing temperature by heat conduction. Therefore, even if sublimates adhere to the portion close to the heating plate 13, they will be decomposed. However, as the distance from the heating plate 13 increases, the temperature decreases due to heat dissipation. In particular, in the through portion between the suction pipe 32 and the base 5, if it penetrates the base 5 as it is, the temperature will decrease due to heat dissipation to the base 5, and sublimates may adhere to the inner periphery of the suction pipe 32. In the present embodiment, a heat insulating member 33 is provided on the outer periphery of the through portion of the suction pipe 32. Therefore, this heat dissipation is suppressed, and sublimates are prevented from adhering to the inner periphery of the through portion of the suction pipe 32.

[0069] As described above, the sublimates generated during the heat treatment and sucked from the suction port 31 are collected by the collection container 40. However, if the heat treatment is repeatedly performed for a long time, the suction exhaust itself may malfunction due to the sublimates collected in the collection container 40. Therefore, for example, it is necessary to periodically remove the collection container 40, perform maintenance on it, and replace it with a new collection container 40.

[0070] Even in this case, the embodiment can handle it properly. That is, as Figure 1 、 Figure 5 shown, in a state where the wafer W can be adsorbed and held, the support table 51 is pushed upward by the lifting mechanism 52, and the connection port 41 on the upper surface of the collection container 40 is in a state of being connected to the lower end portion of the suction pipe 32. Thus, first, the connection between the suction exhaust pipe 49 and the valve V3 is released, and the operation of pushing the collection container 40 upward by the lifting mechanism 52 is released. As Figure 6 shown, if the support table 51 is lowered, the connection between the collection container 40 and the lower end portion of the suction pipe 32 is released, and the collection container 40 can be placed only on the receiving portion 53. Therefore, the maintenance and replacement of the collection container 40 are easy. In addition, for the suction pipe 32, if it is configured to be detachable from the heating plate 13, it is easy to separately maintain the suction pipe 32 itself.

[0071] In addition, in the above-described embodiment, a first space 42 with a relatively small pressure loss and a second space 43 with a relatively large pressure loss are formed in the collection container 40. However, in this case, it is also possible that there is no need to separately provide a flow path in the second space 43, and it can be simply a space smaller than the first space 42. In addition, it is not limited to two spaces, and a plurality of spaces with different sizes can be provided in the collection container 40 in the vertical or horizontal direction. Of course, since the sublimates can be collected by the inertial collision of the air flow from the suction pipe 32, it is also possible to form only a single space in the collection container 40.

[0072] In addition, the flow path 46 itself is not limited to a spiral shape. For example, it can be a flow path in which baffles are arranged in a zigzag or staggered shape within the flow path.

[0073] Moreover, as Figure 7 shown, in order to actively decompose the sublimates collected in the collection container 40, it is also possible to provide a heater 71 as a heating mechanism in the collection container 40 and decompose the collected sublimates by heating. In this case, it is effective to arrange the heater 71 to heat the area where the air flow containing sublimates first collides with the bottom plate 40b in the collection container 40. In addition, a catalyst for decomposing the collected sublimates can also be provided in the collection container 40.

[0074] In addition, as Figure 8 shown, it is also possible to provide a cooling part 72 on the lower surface side of the collection container 40 to cool the lower surface side in the collection container 40 and actively deposit sublimates. As the cooling part 72, for example, a Peltier element that does not require piping can be exemplified. Of course, it can also be a cooling part with a structure through which a refrigerant or cooling water flows.

[0075] Next, another embodiment of the heat treatment apparatus will be described. In addition, when describing, in comparison with the heat treatment apparatus 1 of the embodiment shown in Figure 9 , mainly the different parts will be described, and the description of the common parts will be omitted. Figure 1 The heat treatment apparatus 71 shown in

[0076] Figure 9 is provided with an annular hanging part 3f at the outer peripheral end of the lid part 3 instead of the annular shutter 4. Moreover, a fixing part 3g is provided on the outer peripheral part of the lid part 3, and this fixing part 3g is connected to the lifting mechanism 25. Therefore, it becomes a structure in which the entire lid part 3 is lifted and lowered by the operation of the lifting mechanism 25.

[0077] Moreover, a gas supply port 11a for supplying gas toward the heating plate 13 is provided in the horizontal direction along the edge portion 11 on the side of the heating plate 13. The gas supply port 11a of the present embodiment is formed between a ring-shaped flange portion 11b sized to slightly cover the peripheral portion of the heating plate 13 and a support portion 11c on the side of the edge portion 11 closer to the heating plate 13. The flange portion 11b constitutes a flow straightener. The gas supply port 11a is connected to a gas supply passage 72 via a flow passage 11d. The gas supply passage 72 communicates with a supply source (not shown) of a dilution gas such as N2 or dry air.

[0078] According to the heat treatment apparatus 71 having this structure, a dilution gas can be supplied from the gas supply port 11a toward the wafer W on the heating plate 13, thereby reducing the concentration of the sublimate in the atmosphere below the wafer W. That is, as described above, fine convex portions such as clearance pins and approach pins for creating fine voids are formed on the surface of the heating plate 13. Therefore, when suction is performed from the suction port 31, fine voids are formed between the wafer W and the heating plate 13.

[0079] Thus, by supplying the dilution gas from the gas supply port 11a toward the wafer W, the dilution gas can enter the fine voids when the wafer W is being suctioned, reducing the concentration of the sublimate in the atmosphere below the wafer W. As a result, it is possible to prevent the suction flow path inside the suction port 31, the suction pipe 32, and even the collection container 40 from being blocked by the sublimate.

[0080] Moreover, the gas supply port 11a is provided at a position below the upper surface of the wafer W placed on the heating plate 13, and the supply direction is from the upper surface of the wafer W downward, so that the dilution gas supplied from the gas supply port 11a does not interfere with the air flow on the wafer W, thereby suppressing the influence on the heat treatment. In addition, a flange portion 11b serving as a flow straightener is provided above the gas supply port 11a, so that the supplied dilution gas is straightened by the flange portion 11b, further suppressing interference with the air flow on the wafer W.

[0081] It should be considered that the embodiments disclosed herein are illustrative in all respects and not restrictive. The above embodiments can be omitted, replaced, or changed in various ways without departing from the scope and spirit of the claims.

Claims

1. A heat treatment apparatus that heats a substrate having a coating film formed thereon within a processing container, characterized in that: The heat treatment apparatus includes: A placement part provided within the processing container for placing the substrate; A heating part for heating the substrate placed on the placement part; A suction pipe that communicates with a suction port formed in the placement part, penetrates the placement part, and extends vertically downward; and A collection container provided in the suction path between the suction pipe and the suction mechanism, The collection container is configured to be provided directly below the placement part in a top view, connected to the suction pipe, and used for collecting the sublimates within the processing container, By operating the suction mechanism, a continuous suction path is formed from the suction port, the suction pipe, and the collection container to the suction mechanism to adsorb and hold the substrate.

2. The heat treatment apparatus according to claim 1, characterized in that: The collection container is connected to the suction pipe and is detachable.

3. The heat treatment apparatus according to claim 1, characterized in that: A flow path that increases the pressure loss when the airflow from the suction pipe flows through is provided within the collection container.

4. The heat treatment apparatus according to claim 1, characterized in that: The collection container has: A first space where the airflow from the suction pipe first flows through, and the pressure loss in this first space is relatively small; and A second space that communicates with the first space and has a relatively larger pressure loss compared to the first space.

5. The heat treatment apparatus according to claim 1, characterized in that: The collection container has: A plurality of connection ports connected to a plurality of the suction pipes in a circumferential arrangement within the collection container; and A flow path in a spiral shape formed at a position closer to the center within the collection container than the plurality of connection ports.

6. The heat treatment apparatus according to claim 1, characterized in that: The heat treatment apparatus has a lifting mechanism that lifts and lowers the collection container to connect and disconnect between the collection container and the suction pipe.

7. The heat treatment apparatus according to claim 6, characterized in that: The heat treatment apparatus has a receiving part that can place the collection container at a position where the collection container descends from the position connected to the suction pipe and becomes in a state of disconnecting from the suction pipe.

8. The heat treatment apparatus according to any one of claims 1 to 7, characterized in that: The collection container has a heating mechanism for heating the collection container.

9. The heat treatment apparatus according to any one of claims 1 to 7, characterized in that: The collection container has a cooling part for cooling the collection container.

10. The heat treatment apparatus according to any one of claims 1 to 7, characterized in that: The collection container has a catalyst for decomposing the collected sublimates.

11. The heat treatment apparatus according to any one of claims 1 to 7, characterized in that: The heating treatment device is provided with a gas supply port which is disposed on the side of the substrate placed on the placement portion and supplies gas toward the space between the substrate and the placement portion.

12. The heating treatment device according to claim 11, wherein: the gas supply port is disposed at a position lower than the upper surface of the substrate placed on the placement portion.

13. The heating treatment device according to claim 11, wherein: a flow straightener extending toward the placement portion side is provided above the gas supply port.

14. The heating treatment device according to any one of claims 1 to 7, wherein: the heating treatment device further includes: a suction mechanism that performs suction; and a control unit that controls the suction mechanism to weaken the suction force in the latter stage of heating the substrate.

15. A heating treatment method for heating a substrate in a state where the substrate formed with a coating film is placed on a placement portion in a processing container, wherein: the substrate is adsorbed and held by suction through a suction path continuous with a suction port in the processing container, in the suction path, a sublimated product generated during the heating treatment is collected by a collection container disposed directly below the placement portion when viewed from above.

16. The heating treatment method according to claim 15, wherein: the suction force from the suction port is weakened in the latter stage of the heating treatment.

17. The heating treatment method according to claim 15 or 16, wherein: a dilution gas for reducing the concentration of the sublimated product is supplied to the space between the substrate being subjected to the heating treatment and the placement portion.

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