Deposition device

Abstract

A deposition device includes: a substrate support, wherein a substrate is fixed to the substrate support; a target facing the substrate; a first magnet assembly, which is arranged below the target and includes a first magnet extending in a first direction and having a first length and a second magnet at least partially surrounding the first magnet; and a second magnet assembly, which is arranged below the target and is spaced apart from the first magnet assembly in a second direction substantially perpendicular to the first direction and includes a first magnet extending in the first direction and having a second length greater than the first length and a second magnet at least partially surrounding the first magnet of the second magnet assembly, wherein the second magnet of the first magnet assembly and the second magnet of the second magnet assembly have substantially the same length as each other in the first direction.

Description

Technical Field

[0001] Exemplary embodiments of the present inventive concept relate to a deposition apparatus. More particularly, exemplary embodiments of the present inventive concept relate to a deposition apparatus including a plurality of magnet assemblies. Background Art

[0002] At present, display devices with relatively light weight and relatively small size have been developed. Cathode ray tube (CRT) display devices have been used due to performance and competitive price. However, CRT display devices are relatively large. Therefore, display devices such as plasma display devices, liquid crystal display devices and organic light emitting display devices are increasingly used due to their relatively small size, light weight and low power consumption.

[0003] In manufacturing a display device, a deposition device having a target may be used. In some cases, the target, which is a source of a deposition material, may be unevenly eroded. Summary of the invention

[0004] According to an exemplary embodiment of the present inventive concept, a deposition device includes: a substrate support, wherein a substrate is fixed to the substrate support; a target facing the substrate; a first magnet assembly, which is arranged below the target and includes a first magnet extending in a first direction and having a first length and a second magnet at least partially surrounding the first magnet; and a second magnet assembly, which is arranged below the target and is spaced apart from the first magnet assembly in a second direction substantially perpendicular to the first direction and includes a first magnet extending in the first direction and having a second length greater than the first length and a second magnet at least partially surrounding the first magnet of the second magnet assembly, wherein the second magnet of the first magnet assembly and the second magnet of the second magnet assembly have substantially the same length as each other in the first direction.

[0005] In an exemplary embodiment of the present inventive concept, the first magnet assembly and the second magnet assembly are configured to reciprocate along the second direction.

[0006] In an exemplary embodiment of the present inventive concept, the second magnet of the first magnet assembly and the second magnet of the second magnet assembly both have a rectangular shape.

[0007] In an exemplary embodiment of the present inventive concept, the first magnet and the second magnet of the first magnet assembly and the first magnet and the second magnet of the second magnet assembly each include a plurality of magnet blocks.

[0008] In an exemplary embodiment of the present inventive concept, the number of magnet pieces of the first magnet of the second magnet assembly is greater than the number of magnet pieces of the first magnet of the first magnet assembly.

[0009] In an exemplary embodiment of the present inventive concept, the deposition device further includes: a third magnet assembly, which is spaced apart from the second magnet assembly in the second direction and includes a first magnet extending in the first direction and a second magnet at least partially surrounding the first magnet of the third magnet assembly, wherein the second magnet of the first magnet assembly and the second magnet of the third magnet assembly have substantially the same length in the first direction.

[0010] In an exemplary embodiment of the present inventive concept, the first magnet of the third magnet assembly has a third length that is greater than the first length and less than the second length.

[0011] In an exemplary embodiment of the present inventive concept, the deposition device further includes: a plurality of magnet assemblies spaced apart from the second magnet assembly in the second direction, wherein each of the plurality of magnet assemblies includes a first magnet and a second magnet at least partially surrounding the first magnet of the magnet assembly, and wherein the first magnet assembly, the second magnet assembly, and the plurality of magnet assemblies are arranged symmetrically with respect to an imaginary line extending in the first direction.

[0012] In an exemplary embodiment of the present inventive concept, the number of magnet assemblies included in the first magnet assembly, the second magnet assembly, and the plurality of magnet assemblies is an odd number. The lengths of the second magnet of the first magnet assembly, the second magnet of the second magnet assembly, and the second magnet of the plurality of magnet assemblies in the first direction are all the same as each other, and the lengths of the first magnets of two adjacent magnet assemblies are different from each other.

[0013] In an exemplary embodiment of the present inventive concept, the deposition apparatus further includes: a shunt disposed between a portion of the second magnet assembly and the target and including a ferromagnetic material.

[0014] In an exemplary embodiment of the present inventive concept, the magnetic tuner is arranged to overlap an edge of the substrate.

[0015] In an exemplary embodiment of the present inventive concept, the deposition apparatus further includes: a chamber for accommodating the substrate support and the target; a vacuum provider for providing vacuum to the chamber; and a gas provider for providing a process gas into the chamber.

[0016] In an exemplary embodiment of the present inventive concept, the deposition apparatus further includes: a backing plate for fixing the target; a cavity plate disposed under the backing plate to fix the backing plate and fixed to the chamber; and a non-stick layer disposed between the cavity plate and the backing plate.

[0017] In an exemplary embodiment of the present inventive concept, a portion of the first magnet assembly is disposed not to overlap with the substrate.

[0018] According to an exemplary embodiment of the present inventive concept, a deposition device includes: a substrate support, wherein a substrate is fixed to the substrate support; a target facing the substrate; a first magnet assembly, which is arranged below the target and includes a first magnet extending in a first direction and having a first length and a second magnet at least partially surrounding the first magnet; and a second magnet assembly, which is arranged below the target and is spaced apart from the first magnet assembly in a second direction substantially perpendicular to the first direction, and includes a first magnet extending in the first direction and having a second length greater than the first length and a second magnet at least partially surrounding the first magnet of the second magnet assembly, wherein the length of the second magnet of the first magnet assembly in the first direction is less than the length of the second magnet of the second magnet assembly in the first direction, and a portion of the first magnet assembly does not overlap with the substrate.

[0019] In an exemplary embodiment of the present inventive concept, the deposition device further includes: a third magnet assembly, which is spaced apart from the second magnet assembly in the second direction and includes a first magnet extending in the first direction and a second magnet at least partially surrounding the first magnet of the third magnet assembly, wherein the second magnet of the first magnet assembly and the second magnet of the third magnet assembly have substantially the same length in the first direction.

[0020] According to an exemplary embodiment of the present inventive concept, a deposition device includes: a substrate support, wherein a substrate is fixed to the substrate support; a target facing the substrate; and a plurality of magnet assemblies arranged below the target, wherein each of the plurality of magnet assemblies includes a first magnet extending in a first direction and a second magnet at least partially surrounding the first magnet, wherein the second magnets of the plurality of magnet assemblies have substantially the same length as each other in the first direction, and the first magnets of at least two of the plurality of magnet assemblies have different lengths from each other.

[0021] In an exemplary embodiment of the present inventive concept, the plurality of magnet assemblies are arranged symmetrically with respect to an imaginary line extending in the first direction.

[0022] In an exemplary embodiment of the present inventive concept, lengths of the first magnets of two adjacent magnet assemblies are different from each other.

[0023] According to an exemplary embodiment of the present inventive concept, a deposition device includes: a substrate support; a substrate disposed on the substrate support; a target facing the substrate; and a plurality of magnet assemblies disposed below the target and including a first magnet assembly, a second magnet assembly, and a third magnet assembly, wherein each of the plurality of magnet assemblies includes a first magnet extending in a first direction and a second magnet at least partially surrounding the first magnet, wherein a length of the first magnet of the second magnet assembly is different from a length of the first magnet of the first magnet assembly and a length of the first magnet of the third magnet assembly. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The above and other features of the present inventive concept will become more apparent by describing in detail exemplary embodiments of the present inventive concept with reference to the accompanying drawings, in which:

[0025] Figure 1 is a schematic side view illustrating a deposition apparatus according to an exemplary embodiment of the present inventive concept;

[0026] Figure 2 As an example Figure 1 A plan view of a magnet assembly of a deposition apparatus;

[0027] Figure 3 As an example Figure 2 A partial enlarged view of the first magnet assembly and the second magnet assembly;

[0028] Figure 4A , Figure 4B , Figure 4C and Figure 4D A view illustrating a magnetic field simulation, plasma discharge, and prevention of plasma congestion at an edge portion according to a length of a first magnet of a magnet assembly;

[0029] Figure 5 is a plan view illustrating an arrangement of a magnet assembly according to an exemplary embodiment of the present inventive concept;

[0030] Figure 6 A plan view illustrating an arrangement of a magnet assembly of a deposition apparatus according to an exemplary embodiment of the present inventive concept;

[0031] Figure 7 is a plan view illustrating an arrangement of a magnet assembly according to an exemplary embodiment of the present inventive concept;

[0032] Figure 8A schematic side view illustrating a deposition apparatus according to an exemplary embodiment of the present inventive concept; and

[0033] Fig. 9 As an example Figure 8 A plan view of the arrangement of the magnet assembly of the deposition apparatus. DETAILED DESCRIPTION

[0034] Hereinafter, exemplary embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.

[0035] Figure 1 is a schematic side view illustrating a deposition apparatus according to an exemplary embodiment of the inventive concept.

[0036] See also Figure 1 The deposition apparatus may include a chamber 110 , a substrate support 120 , a cavity plate 130 , a non-stick layer 132 , a backing plate 134 , a target 136 , a plurality of magnet assemblies 150 , a vacuum provider 160 , and a gas provider 170 .

[0037] The chamber 110 may be maintained in a high vacuum state. The chamber 110 is a space for sputtering to deposit a thin film on a substrate SB. A substrate support 120 supporting the substrate SB may be disposed on one inner side of the chamber 110. A target 136 as a deposition material and a magnet assembly 150 generating a magnetic field may be disposed on the other side (e.g., the opposite side) of the chamber 110. For example, the chamber 110 may accommodate a substrate support 120 for supporting the substrate SB and a target 136 facing the substrate SB.

[0038] In addition, a vacuum provider 160 maintaining vacuum inside the chamber 110 and a gas provider 170 supplying process gas to the chamber 110 may be connected to the outside of the chamber 110. For example, the vacuum provider 160 may be a vacuum generator or a vacuum pump. The gas provider 170 may be, for example, a gas generator.

[0039] The substrate support 120 may bring the substrate SB into or out of the chamber 110. In addition, the substrate support 120 may fix the substrate SB during deposition of a deposition material on the substrate SB.

[0040] One surface of the substrate SB is coupled to the substrate support 120, and the other surface thereof faces the target 136. For example, the substrate SB may be a glass substrate constituting a flat panel display device such as a liquid crystal display device, a plasma display device, and an organic light emitting diode device.

[0041] The cavity plate 130 may be located below the pad plate 134. For example, the cavity plate 130 may be disposed on a lower surface of the pad plate 134. The cavity plate 130 fixes the pad plate 134. For example, the cavity plate 130 fixes the pad plate 134 to the chamber 110. In addition, the cavity plate 130 may be installed to be fixed to the chamber 110.

[0042] The non-stick layer 132 may be located between the cavity plate 130 and the backing plate 134. The non-stick layer 132 may include, for example, polytetrafluoroethylene (PTFE). In addition, the non-stick layer 132 may be referred to as a TEFLON layer 132.

[0043] The backing plate 134 fixes the target 136. For example, the backing plate 134 may fix the target 136 to the chamber 110. In addition, a coolant may flow within the backing plate 134, thereby limiting a temperature increase of the target 136. In addition, the backing plate 134 may receive power from a power supply unit and supply the received power to the target 136. The target 136 supplied with power from the power supply unit may be driven by a cathode to form plasma.

[0044] The target 136 is a deposition material to be deposited on the substrate SB. Here, the deposition material includes various materials that can be deposited on the substrate SB. For example, the deposition material may include molybdenum (Mo), aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), materials such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), molybdenum nitride (MoN), etc.

[0045] A plurality of magnet assemblies 150 may be disposed on the bottom surface of the cavity plate 130. The magnet assemblies 150 are arranged along the second direction D2, and form a magnetic field to confine the movement of ions generated by the plasma around the target 136 and extend the movement path of the ions to increase sputtering efficiency. The magnet assemblies 150 may be scan-driven to reciprocate along the second direction D2.

[0046] Will refer to it later Figure 2 The magnet assembly 150 is described in detail.

[0047] The vacuum provider 160 may be connected to the chamber 110 to provide a vacuum to the chamber 110 .

[0048] The gas provider 170 may be connected to the chamber 110 to provide a process gas to the chamber 110. The process gas may include an inert gas such as argon and / or a reactive gas including oxygen, nitrogen, hydrogen, ammonia, ozone, or the like.

[0049] Figure 2 As an example Figure 1 A plan view of the magnet assembly of the deposition apparatus.

[0050] See also Figure 1 and Figure 2, the magnet assembly 150 may include a first magnet assembly 150a, a second magnet assembly 150b, a third magnet assembly 150c, a fourth magnet assembly 150d, a fifth magnet assembly 150e, a sixth magnet assembly 150f, a seventh magnet assembly 150g and an eighth magnet assembly 150h.

[0051] The first magnet assembly 150a, the second magnet assembly 150b, the third magnet assembly 150c, the fourth magnet assembly 150d, the fifth magnet assembly 150e, the sixth magnet assembly 150f, the seventh magnet assembly 150g, and the eighth magnet assembly 150h may be arranged in the second direction D2.

[0052] The first magnet assembly 150 a may include a first magnet 152 extending in a first direction D1 substantially perpendicular to the second direction D2 and having a first length d1 , and a second magnet 154 at least partially surrounding the first magnet 152 .

[0053] The second magnet assembly 150b may be spaced apart from the first magnet assembly 150a in a second direction D2 that is substantially perpendicular to the first direction D1. In addition, the second magnet assembly 150b may be spaced apart from the first magnet assembly 150a in the first direction D1. The second magnet assembly 150b may include a first magnet extending in the first direction D1 and having a second length d2 greater than the first length d1 and a second magnet disposed around the first magnet. For example, the end of the first magnet 152 of the first magnet assembly 150a and the end of the first magnet of the second magnet assembly 150b may be spaced apart from each other by a third distance g3 in the first direction D1. For example, the end of the first magnet of the second magnet assembly 150b extends beyond the end of the first magnet 152 of the first magnet assembly 150a by a third distance g3 in the first direction D1.

[0054] The second magnet 154 of the first magnet assembly 150a and the second magnet of the second magnet assembly 150b may have the same length t1 in the first direction. In one embodiment, the second magnet 154 of the first magnet assembly 150a and the second magnet of the second magnet assembly 150b may both have a rectangular shape.

[0055] The third magnet assembly 150c, the fourth magnet assembly 150d, the fifth magnet assembly 150e, the sixth magnet assembly 150f, and the seventh magnet assembly 150g may have a configuration substantially the same as the second magnet assembly 150b. The eighth magnet assembly 150h may have a configuration substantially the same as the first magnet assembly 150a. For example, the magnet assembly 150 may be symmetrically arranged in a plan view with respect to an imaginary line extending in the first direction D1 between the fourth magnet assembly 150d and the fifth magnet assembly 150e.

[0056] The substrate SB may be arranged to overlap with the magnet assembly 150. The edge of the substrate SB extending in the second direction D2, such as the horizontal side of the substrate SB, is located inside the ends of the first magnets 152 of the second magnet assembly 150b to the seventh magnet assembly 150g. As a result, a first gap g1 (e.g., distance) may be provided between the horizontal side of the substrate SB and the ends of the first magnets 152 of the second magnet assembly 150b to the seventh magnet assembly 150g. In addition, the horizontal side of the substrate SB may be located inside the ends of the first magnets 152 of the first magnet assembly 150a and the eighth magnet assembly 150h. As a result, a second gap g2 smaller than the first gap g1 may be provided between the horizontal side of the substrate SB and the ends of the first magnets 152 of the first magnet assembly 150a and the eighth magnet assembly 150h.

[0057] According to the present embodiment, the deposition device includes a substrate support for fixing the substrate, a target facing the substrate, and a plurality of magnet assemblies, the plurality of magnet assemblies are arranged below the target, and each of the plurality of magnet assemblies includes a first magnet extending in a first direction and a second magnet at least partially surrounding the first magnet. The second magnets in the plurality of magnet assemblies have the same length in the first direction, and the first magnets of at least two magnet assemblies are formed to have different lengths. Therefore, the uneven erosion of the target caused by the overlap of the plasma racetrack formed by the magnet assembly at the edge of the substrate can be minimized. Accordingly, the efficiency of the target can be improved, and the process efficiency of the deposition process can be improved.

[0058] Figure 3 As an example Figure 2 A partial enlarged view of the first magnet assembly and the second magnet assembly.

[0059] See also Figure 2 and Figure 3 , the first magnet 152 and the second magnet 154 of the first magnet assembly 150a and the second magnet assembly 150b may include a plurality of magnet blocks 152a and a plurality of magnet blocks 154a, respectively. In this case, the number of magnet blocks 152a constituting the first magnet 152 of the first magnet assembly 150a and the number of magnet blocks 152a constituting the first magnet 152 of the second magnet assembly 150b may be different.

[0060] Thus, the number of magnet pieces 152a of the first magnet 152 of the second magnet assembly 150b may be greater than the number of magnet pieces 152a of the first magnet 152 of the first magnet assembly 150a. Therefore, the length of the first magnet may be easily adjusted if necessary.

[0061] FIG. 4A to FIG. 4DViews illustrating magnetic field simulation, plasma discharge, and prevention of plasma congestion at an edge portion according to the length of a first magnet of a magnet assembly.

[0062] Figure 4A Four magnet assemblies including first magnets with different lengths for simulation are shown. Figure 4B Reason Figure 4A A simulated image of the magnetic field generated by the magnet assembly. Figure 4C Reason Figure 4A Image of the plasma racetrack produced by the magnet assembly. Figure 4D is a diagram for describing the degree of plasma density at the edge portion of the magnet assembly when driving left-right scanning.

[0063] See also FIG. 4A to FIG. 4D , the magnet assembly generates a magnetic field, which in turn generates a density of electrons and plasma. If the target (e.g., see Figure 1 If local plasma congestion occurs in 136), target erosion due to plasma may also occur locally, resulting in uneven erosion of the target.

[0064] To minimize localized erosion, the magnet assembly can be Figure 4D As shown in the figure, the magnet assembly is scanned left and right, but erosion imbalance still occurs at the part where the adjacent magnet assemblies overlap each other during the scanning drive. This imbalance is due to the phenomenon that the plasma overlaps during the scanning drive and thus causes local erosion acceleration.

[0065] According to an exemplary embodiment of the present inventive concept, since the lengths of the first magnets of two adjacent magnet assemblies are different from each other (for example, see Figure 2 The difference in length between the first magnet 152 of the first magnet assembly 150a and the first magnet of the second magnet assembly 150b), and by varying the length of the plasma runway generated by each magnet assembly in the first direction D1, uneven erosion can be minimized.

[0066] Thus, the second magnet collects electrons using the magnetic field generated by the first and second magnets. Keeping the length of the second magnet constant and shortening the length of the first magnet, only the length of the plasma racetrack can be adjusted while keeping the electron collection similar.

[0067] Accordingly, erosion imbalance at an edge portion (eg, the upper side or the lower side in the figure) of the target can be reduced.

[0068] Figure 5 is a plan view illustrating an arrangement of a magnet assembly according to an exemplary embodiment of the inventive concept.

[0069] See also Figure 5, except for the length of the first magnet of the third magnet assembly 150c and the sixth magnet assembly 150f, the deposition apparatus is Figures 1 to 3 The deposition apparatuses are substantially the same. Therefore, repeated descriptions may be omitted.

[0070] The third magnet assembly 150c may be spaced apart from the second magnet assembly 150b in the second direction D2. The third magnet assembly 150c may include a first magnet extending in the first direction D1 and a second magnet at least partially surrounding the first magnet. The first magnet of the third magnet assembly 150c may have a third length d3. The third length d3 may be greater than the first length d1 of the first magnet of the first magnet assembly 150a, and less than the second length d2 of the first magnet of the second magnet assembly 150b. Accordingly, the lengths of the first magnets of two adjacent magnet assemblies in the magnet assembly of the deposition device may be different from each other. If there are an even number of magnet assemblies in the deposition device, the two middle magnet assemblies may each include a first magnet having the same length as each other.

[0071] The magnet assemblies may be arranged symmetrically with respect to an imaginary line extending in the first direction D1 between the fourth magnet assembly 150D and the fifth magnet assembly 150e. For example, the eighth magnet assembly 150h may have a configuration substantially the same as that of the first magnet assembly 150a. The seventh magnet assembly 150g may have a configuration substantially the same as that of the second magnet assembly 150b. The sixth magnet assembly 150f may have a configuration substantially the same as that of the third magnet assembly 150c. The fifth magnet assembly 150e may have a configuration substantially the same as that of the fourth magnet assembly 150d.

[0072] Figure 6 is a plan view illustrating an arrangement of a magnet assembly of a deposition apparatus according to an exemplary embodiment of the inventive concept.

[0073] See also Figure 6 ,Apart from Figure 6 In addition to including nine magnet assemblies instead of eight magnet assemblies, the deposition apparatus is Figure 5 The deposition apparatuses are substantially the same. Therefore, repeated descriptions may be omitted.

[0074] The magnet assembly may include a first magnet assembly 150a, a second magnet assembly 150b, a third magnet assembly 150c, a fourth magnet assembly 150d, a fifth magnet assembly 150e, a sixth magnet assembly 150f, a seventh magnet assembly 150g, an eighth magnet assembly 150h, and a ninth magnet assembly 150i.

[0075] The first magnets of the first magnet assembly 150a and the ninth magnet assembly 150i may each have a first length d1. The first magnets of the second magnet assembly 150b, the fourth magnet assembly 150d, the sixth magnet assembly 150f, and the eighth magnet assembly 150h may each have a second length d2 greater than the first length d1. The first magnets of the third magnet assembly 150c and the seventh magnet assembly 150g may each have a third length d3 greater than the first length d1 and less than the second length d2. The first magnet of the fifth magnet assembly 150e may have a fourth length d4 greater than the third length d3 and less than the second length d2. Accordingly, the lengths of the first magnets of two adjacent magnet assemblies in the magnet assembly of the deposition device may be different from each other.

[0076] Figure 7 is a plan view illustrating an arrangement of a magnet assembly according to an exemplary embodiment of the inventive concept.

[0077] See also Figure 7 In addition to the first magnet assembly and the eighth magnet assembly, the deposition device can be Figures 1 to 3 The deposition apparatuses are substantially the same. Therefore, repeated descriptions may be omitted.

[0078] The magnet assembly may include a first magnet assembly 150a, a second magnet assembly 150b, a third magnet assembly 150c, a fourth magnet assembly 150d, a fifth magnet assembly 150e, a sixth magnet assembly 150f, a seventh magnet assembly 150g, and an eighth magnet assembly 150h.

[0079] The first magnet assembly 150a may include a first magnet extending in the first direction D1 and having a first length, and a second magnet disposed to at least partially surround the first magnet.

[0080] The second magnet assembly 150b may be spaced apart from the first magnet assembly 150a in a second direction D2 perpendicular to the first direction D1, and may include a first magnet extending in the first direction D1 and having a second length greater than the first length and a second magnet at least partially surrounding the first magnet.

[0081] The length t1 of the second magnet of the first magnet assembly 150a in the first direction D1 may be smaller than the length t2 of the second magnet of the second magnet assembly 150b in the first direction D1. The first magnet assembly 150a may be disposed to overlap an edge of the substrate SB extending in the first direction D1.

[0082] Here, since the length of the first magnet and the second magnet of the first magnet assembly 150a is formed to be shorter than the length of the adjacent magnet assembly (e.g., the second magnet assembly 150b), the magnetic field can be weaker than the magnetic field of the other magnet assemblies. However, since the edge of the first magnet assembly 150a in the first direction D1 (e.g., the up and down direction in the figure) is set not to overlap with the substrate SB, the influence of the uneven magnetic field at the edge of the first magnet assembly 150a can be small. Thus, the unbalanced erosion of the target caused by the overlap of the plasma runway can be reduced.

[0083] In the exemplary embodiments of the present inventive concept, the deposition device has been described as including eight or nine magnet assemblies, but the present inventive concept is not limited thereto. For example, the deposition device may include a number of magnet assemblies that may be less than eight or more than nine, and the length of the first magnet of the magnet assembly disposed at the left and right ends of the arrangement of the magnet assembly may be less than the length of the first magnet of the magnet assembly disposed in the middle of the arrangement of the magnet assembly. For example, the number of magnet assemblies may be an odd number.

[0084] Figure 8 is a schematic side view illustrating a deposition apparatus according to an exemplary embodiment of the inventive concept. Fig. 9 As an example Figure 8 A plan view of the arrangement of the magnet assembly of the deposition apparatus.

[0085] See also Figure 8 and 9 ,Apart from Figure 8 and Fig. 9 The deposition device further includes a magnetic regulator SH. Figures 1 to 3 The deposition apparatuses are substantially the same. Therefore, repeated descriptions may be omitted.

[0086] The magnetic modulator SH may include a material that is disposed between a portion of the magnet assembly 150 and the target 136 and that weakens the strength of the magnetic field. For example, the magnetic modulator SH may be made of a ferromagnetic material such as stainless steel to have a spin direction opposite to that of the magnet assembly 150, thereby weakening the strength of the magnetic field around the magnetic modulator SH. Therefore, an increase in the deposition rate of a thin film in a specific region may be prevented.

[0087] The magnetic modulator SH may be disposed in response to the erosion of the target 136. For example, the magnetic modulator SH may be disposed in the deposition apparatus so as to overlap with the edge of the substrate SB (see, for example, Fig. 9 ).

[0088] According to the present embodiment, the deposition device includes a substrate support for fixing the substrate, a target facing the substrate, and a plurality of magnet assemblies, the plurality of magnet assemblies are arranged below the target, and each of the plurality of magnet assemblies includes a first magnet extending in a first direction and a second magnet surrounding the first magnet. The second magnets of the plurality of magnet assemblies have the same length in the first direction, and the first magnets of at least two magnet assemblies are formed to have different lengths. Therefore, the uneven erosion of the target caused by the overlap of the plasma runway formed by the magnet assembly at the edge of the substrate can be minimized. Accordingly, the efficiency of the target can be improved, and the process efficiency of the deposition process can be improved.

[0089] The inventive concept can be applied to the manufacture of organic light-emitting display devices and various electronic devices including the organic light-emitting display devices. For example, the inventive concept can be applied to the manufacture of mobile phones, smart phones, video phones, smart tablets, smart watches, tablet computers, car navigation systems, televisions, computer monitors, notebook computers, etc.

[0090] While the inventive concepts have been described with reference to exemplary embodiments thereof, persons skilled in the art will understand that various changes in form and details may be made thereto without departing from the spirit and scope of the inventive concepts.

Claims

1. A deposition device, comprising: a substrate support, wherein a substrate is secured to the substrate support; a target facing the substrate; a first magnet assembly disposed below the target and comprising a first magnet extending in a first direction and having a first length and a second magnet at least partially surrounding the first magnet; as well as a second magnet assembly disposed below the target and spaced apart from the first magnet assembly in a second direction perpendicular to the first direction, and comprising a first magnet extending in the first direction and having a second length greater than the first length and a second magnet at least partially surrounding the first magnet of the second magnet assembly, wherein the second magnet of the first magnet assembly and the second magnet of the second magnet assembly have the same length as each other in the first direction, The deposition device further comprises: a third magnet assembly spaced apart from the second magnet assembly in the second direction and comprising a first magnet extending in the first direction and a second magnet at least partially surrounding the first magnet of the third magnet assembly, wherein the second magnet of the first magnet assembly and the second magnet of the third magnet assembly have the same length in the first direction, and The first magnet of the third magnet assembly has a third length that is greater than the first length and less than the second length. 2 . The deposition apparatus according to claim 1 , wherein the first magnet assembly and the second magnet assembly are configured to reciprocate along the second direction. 3 . The deposition apparatus of claim 1 , wherein the second magnet of the first magnet assembly and the second magnet of the second magnet assembly each have a rectangular shape. 4 . The deposition apparatus according to claim 1 , wherein the first magnet and the second magnet of the first magnet assembly and the first magnet and the second magnet of the second magnet assembly each comprise a plurality of magnet blocks. 5 . The deposition apparatus according to claim 4 , wherein the number of magnet segments of the first magnet of the second magnet assembly is greater than the number of magnet segments of the first magnet of the first magnet assembly.

6. The deposition apparatus according to claim 1, further comprising: a plurality of magnet assemblies spaced apart from the third magnet assembly in the second direction, wherein each magnet assembly of the plurality of magnet assemblies includes a first magnet and a second magnet at least partially surrounding the first magnet of the magnet assembly, and The first magnet assembly, the second magnet assembly, the third magnet assembly, and the plurality of magnet assemblies are arranged symmetrically with respect to an imaginary line extending in the first direction.

7. The deposition apparatus according to claim 6, wherein the number of the first magnet assembly, the second magnet assembly, the third magnet assembly, and the number of magnet assemblies included in the plurality of magnet assemblies is an odd number, The second magnet of the first magnet assembly, the second magnet of the second magnet assembly, the second magnet of the third magnet assembly, and the second magnets of the plurality of magnet assemblies are all the same length as one another in the first direction, and The lengths of the first magnets of two adjacent magnet assemblies are different from each other.

8. The deposition apparatus according to claim 1, further comprising: A magnetic modulator is disposed between a portion of the second magnet assembly and the target and includes a ferromagnetic material. 9 . The deposition apparatus according to claim 8 , wherein the magnetic modulator is arranged to overlap with an edge of the substrate.

10. The deposition apparatus according to claim 1, further comprising: a chamber for housing the substrate support and the target; a vacuum provider for providing a vacuum to the chamber; and A gas provider is provided for providing a process gas into the chamber.

11. The deposition apparatus according to claim 10, further comprising: a backing plate for fixing the target; a cavity plate disposed below the backing plate to fix the backing plate and fixed to the chamber; and A non-stick layer is disposed between the cavity plate and the backing plate. 12 . The deposition apparatus according to claim 1 , wherein a portion of the first magnet assembly is disposed not to overlap with the substrate.

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