Mounting table and substrate processing apparatus

Abstract

The present invention provides a mounting table and a substrate processing apparatus. Consumption of an adhesive layer used in the mounting table is prevented. The mounting table has: a wafer mounting portion having a mounting surface for mounting a wafer and formed with a first through hole; a base table adhesively bonded to the back surface of the wafer mounting portion by a first adhesive layer and formed with a second through hole communicating with the first through hole, the second through hole having a larger hole diameter than that of the first through hole; a cylindrical sleeve provided inside the second through hole so as to be detachable from the base table together with a sealing member; and the sealing member provided between the back surface of the wafer mounting portion and the sleeve so as to be separated from the first adhesive layer to seal the first adhesive layer, a convex portion is formed in the circumferential direction of the sleeve so as to extend along at least any one of the outer circumference and the inner circumference of the top end of the sleeve, and the sealing member is pushed by the top end of the sleeve to expand and contract.

Description

Technical Field

[0001] The present disclosure relates to a stage and a substrate processing apparatus. Background Art

[0002] There is known a plasma processing apparatus including: a vacuum processing chamber, a stage for holding a workpiece to be processed, which also serves as a lower electrode in the processing chamber, and an upper electrode opposed to the stage (for example, refer to Patent Document 1).

[0003] The stage of the plasma processing apparatus includes an electrostatic chuck, a base, and a cylindrical sleeve. A first through-hole is formed in the electrostatic chuck. The base is bonded to the back surface of the electrostatic chuck using a first adhesive layer and has a second through-hole communicating with the first through-hole. The sleeve is bonded to the back surface of the electrostatic chuck in a state of communicating with the first through-hole using a second adhesive layer. Thus, the cylindrical sleeve is bonded to the back surface of the electrostatic chuck in a state where the second through-hole formed in the base communicates with the first through-hole. Plasma or radicals flowing in from the first through-hole or the second through-hole are blocked by the sleeve, and thus it is possible to prevent the first adhesive layer, that is, the adhesive used for bonding of the electrostatic chuck, from being directly exposed to plasma or radicals and being consumed.

[0004] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2016 - 28448 Summary of the Invention

[0005] Problems to be Solved by the Invention

[0006] The present disclosure provides a stage and a substrate processing apparatus capable of preventing consumption of an adhesive layer used in the stage.

[0007] Solutions for Solving the Problems

[0008] According to one aspect of the present disclosure, there is provided a stage having: a wafer placement portion having a placement surface for placing a wafer and formed with a first through-hole; a base bonded to the back surface of the wafer placement portion using a first adhesive layer and formed with a second through-hole communicating with the first through-hole, the second through-hole having a larger aperture than that of the first through-hole; a cylindrical sleeve provided inside the second through-hole in a manner capable of being detached from the base together with a sealing member; and the sealing member provided between the back surface of the wafer placement portion and the sleeve in a manner separated from the first adhesive layer to seal the first adhesive layer, and having a convex portion formed in the circumferential direction of the sleeve so as to extend along at least any one of the outer circumference and the inner circumference of the top end of the sleeve, and the sealing member being pushed by the top end of the sleeve to expand and contract.

[0009] Effects of the Invention

[0010] According to one technical solution, it is possible to prevent the consumption of the adhesive layer used in the mounting table. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a cross-sectional schematic view showing an example of a substrate processing apparatus according to an embodiment.

[0012] Figure 2 is a view showing an example of a mounting table according to an embodiment.

[0013] Figure 3 is a view showing an example of a mounting table according to a modification of an embodiment.

[0014] Figure 4 is a view showing an example of a mounting table according to a modification of an embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0015] Hereinafter, a mode for implementing the present disclosure will be described with reference to the drawings. In each drawing, there are cases where the same reference numerals are assigned to the same components, and duplicate explanations are omitted.

[0016] [Substrate Processing Apparatus]

[0017] Figure 1 is a schematic cross-sectional view showing the structure of a substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 has a processing container 1 configured to be airtight and set to an electrically grounded potential. The processing container 1 has a cylindrical shape and is made of, for example, aluminum. Inside the processing container 1, there is a mounting table 2 for mounting a wafer W. The mounting table 2 has a base 2a and an electrostatic chuck 6. The base 2a is made of a conductive metal, for example, aluminum. A support table 4 supports the mounting table 2.

[0018] An edge ring 5 made of, for example, silicon is provided around the wafer W. The edge ring 5 is also called a focus ring. A cylindrical inner wall member 3a made of, for example, quartz is provided around the edge ring 5, the base 2a, and the support table 4. The mounting table 2 is disposed at the bottom of the processing container 1 by means of the inner wall member 3a and a support member 3 made of, for example, quartz.

[0019] The electrode 6a in the electrostatic chuck 6 is sandwiched between the dielectrics 6b and is connected to a power supply 12. When a voltage is applied from the power supply 12 to the electrode 6a, the wafer W is electrostatically adsorbed to the electrostatic chuck 6 by the action of Coulomb force.

[0020] The mounting stage 2 has a flow path 2d inside. The heat medium supplied from the cooling unit, such as water, circulates in the inlet pipe 2b, the flow path 2d, and the outlet pipe 2c. In addition, a heat transfer gas such as helium is supplied to the back surface of the wafer W via the gas through hole 30 and the gas through hole 30a penetrating the mounting stage 2. With this structure, the wafer W is controlled to a specified temperature.

[0021] A plurality of pin through holes 200 for the lifting pins 61 are provided in the mounting stage 2. For example, there are three such lifting pins 61. In addition, in Figure 1 only one lifting pin 61 is shown. The lifting pin 61 penetrating the pin through hole 200 is connected to a lifting mechanism 62 and moves up and down by the drive of the lifting mechanism 62. The structure around the pin through hole 200 and the lifting mechanism 62 for lifting the lifting pin 61 will be described later.

[0022] On the base, a first RF power supply 10a is connected via a first matcher 11a, and a second RF power supply 10b is connected via a second matcher 11b. The first RF power supply 10a applies high-frequency power for plasma generation at a specified frequency to the base 2a. The second RF power supply 10b has a frequency lower than that of the high-frequency power for plasma generation and applies high-frequency power for a bias voltage for attracting ions to the base 2a. However, the high-frequency power supplied from the second RF power supply 10b may also be used for plasma generation. Above the mounting stage 2, a shower head 16 facing the mounting stage 2 is provided. The shower head 16 and the mounting stage 2 function as a pair of electrodes (upper electrode and lower electrode).

[0023] The shower head 16 has an electrode plate 16b and a top plate 16a. An insulating annular member 95 for supporting the shower head 16 is provided around the shower head 16, and the upper opening of the processing chamber 1 is closed by the shower head 16 and the annular member 95. The top plate 16a is formed of a conductive material, such as aluminum whose surface has been anodized, and the top plate 16a supports the electrode plate 16b in a detachable manner at its lower part.

[0024] A gas diffusion chamber 16c and a gas introduction port 16g for introducing a processing gas into the gas diffusion chamber 16c are formed in the top plate 16a. A gas supply pipe 15a is connected to the gas introduction port 16g. A gas supply unit 15, a mass flow controller (MFC) 15b, and an on-off valve V2 are connected in sequence to the gas supply pipe 15a, and the processing gas is supplied from the gas supply unit 15 to the inside of the top plate 16a via the gas supply pipe 15a. The on-off valve V2 and the mass flow controller (MFC) 15b control the opening and closing and the flow rate of the gas.

[0025] A plurality of gas flow holes 16d are formed in the lower part of the gas diffusion chamber 16c facing the processing container 1, and the plurality of gas flow holes 16d penetrate the electrode plate 16b. The top ends of the gas flow holes 16d serve as gas introduction holes 16e. The processing gas passes through the gas diffusion chamber 16c and the gas flow holes 16d and is supplied in a spray form from the gas introduction holes 16e into the processing container 1.

[0026] A variable DC power supply 72 is connected to the shower head 16 via a low-pass filter (LPF) 71, and the supply of the DC voltage output from the variable DC power supply 72 is turned on and off by a switch 73. The DC voltage from the variable DC power supply 72 and the opening and closing of the switch 73 are controlled by a control unit 90. When the processing gas is plasmaized by applying high-frequency power to the stage 2 from the first RF power supply 10a and the second RF power supply 10b, if necessary, the control unit 90 turns on the switch 73 to apply a prescribed DC voltage to the shower head 16.

[0027] A cylindrical ground conductor 1a is provided so as to extend from the side wall of the processing container 1 to a position above the height position of the shower head 16. The cylindrical ground conductor 1a has a top wall at its upper part.

[0028] An exhaust port 81 is formed at the bottom of the processing container 1, and an exhaust device 83 is connected to the exhaust port 81 via an exhaust pipe 82. The exhaust device 83 has a vacuum pump, and by operating the vacuum pump, the inside of the processing container 1 is decompressed to a prescribed vacuum degree. A loading / unloading port 84 for the wafer W is provided on the side wall inside the processing container 1, and the loading / unloading port 84 can be opened and closed by a gate valve 85.

[0029] A deposit shield 86 is provided along the inner wall surface on the inner side of the side part of the processing container 1. In addition, a deposit shield 87 is provided so as to be detachable along the inner wall member 3a. The deposit shields 86 and 87 prevent etching by-products (deposits) from adhering to the inner wall of the processing container 1 and the inner wall member 3a. A conductive member (GND block) 89 is provided at a height position substantially the same as that of the wafer W on the deposit shield 86, and the conductive member (GND block) 89 is connected so that its potential can be controlled to be grounded, thereby preventing abnormal discharge.

[0030] The substrate processing apparatus 100 is uniformly controlled by a control unit 90. The control unit 90 is provided with a process controller 91 for controlling each part of the substrate processing apparatus 100, a user interface 92, and a storage unit 93.

[0031] The user interface 92 includes a keyboard for a process administrator to input commands for managing the substrate processing apparatus 100, a display for visually displaying the operating status of the substrate processing apparatus 100, and the like.

[0032] A process is stored in the storage unit 93. This process stores a control program (software) for causing the processing controller 91 to execute various processes performed by the substrate processing apparatus 100, processing condition data, and the like. Further, as needed, by using an instruction from the user interface 92 or the like to retrieve an arbitrary process from the storage unit 93 and cause the processing controller 91 to execute it, the desired process is performed using the substrate processing apparatus 100 under the control of the processing controller 91. In addition, a process such as a control program and processing condition data can also be in a state stored in a computer-readable computer storage medium or the like, or can be transmitted from another device at any time via a dedicated line and used online. Examples of the storage medium include a hard disk, a CD, a floppy disk, a semiconductor memory, and the like.

[0033] [Structure of the mounting stage]

[0034] Next, with reference to Figure 2 the structure of the mounting stage 2 will be described. Figure 2 is a schematic cross-sectional view of the mounting stage 2 of the substrate processing apparatus 100, which is an enlarged representation of Figure 1 . Figure 2 It shows a state where the lift pins 61 are raised and the wafer W is supported.

[0035] The electrostatic chuck 6 has a disc shape and has a mounting surface 21 for mounting the wafer W and a back surface 22 opposite to the mounting surface 21. The mounting surface 21 is circular and contacts the back surface of the wafer W to support the wafer W. The adhesive layer 7 is disposed between the base 2a and the electrostatic chuck 6 and bonds the base 2a and the back surface 22 of the electrostatic chuck 6.

[0036] The electrostatic chuck 6 has a pin through-hole 200a, and the base 2a has a pin through-hole 200b. The inner wall of the pin through-hole 200a is formed by the electrostatic chuck 6. The inner wall of the pin through-hole 200b is formed by the base 2a.

[0037] The pin through-hole 200a is an example of the first through-hole formed in the electrostatic chuck. The pin through-hole 200b is an example of the second through-hole formed in the base 2a. The pin through-hole 200 is formed by communicating the pin through-hole 200a and the pin through-hole 200b, and the lift pin 61 is accommodated therein.

[0038] At least a part of the lift pin 61 is formed of sapphire. The lift pin 61 has a cylindrical shape, and its outer diameter is, for example, about several millimeters. The upper end 61a of the lift pin 61 has a spherical surface.

[0039] The lift pin 61 moves up and down within the pin through-hole 200 by means of a lifting mechanism 62, and operates in such a manner that it can protrude from and retract into the placement surface 21 of the placement stage 2. In addition, the lifting mechanism 62 adjusts the height of the stop position of the lift pin 61 so that the upper end 61a of the lift pin 61 is positioned directly below the back surface of the wafer W when the lift pin 61 is received therein.

[0040] As Figure 2 shown, in a state where the lift pin 61 has been raised, the lift pin 61 protrudes from the placement surface 21 of the placement stage 2, and supports the wafer W on the upper part of the placement stage 2. The lift pin 61 descends to the placement surface 21 by means of the lifting mechanism 62 while supporting the wafer W. In a state where the lift pin 61 has been lowered, the lift pin 61 is received within the pin through-hole 200, and the wafer W is placed on the placement surface 21. Thus, the lift pin 61 conveys the wafer W in the vertical direction. After the wafer W is placed on the placement surface 21, a prescribed process is applied to the wafer W, and then, the lift pin 61 raises the processed wafer W and transfers it to the transfer arm.

[0041] The pin through-hole 200a has a diameter that matches the outer diameter of the lift pin 61, that is, a diameter that is slightly larger (for example, about 0.1 to 0.5 mm larger) than the outer diameter of the lift pin 61, and allows the lift pin 61 to move up and down inside the pin through-hole 200a. The diameter of the pin through-hole 200b is larger than the diameter of the pin through-hole 200a. Moreover, an inner cylinder 201 and an outer cylinder 202 are disposed between the inner wall of the pin through-hole 200b and the lift pin 61, and the inner cylinder 201 and the outer cylinder 202 form a part of the pin through-hole 200. The inner cylinder 201 and the outer cylinder 202 are formed of insulating members such as ceramics. The inner cylinder 201 and the outer cylinder 202 may be of the same material or different materials as long as they are insulating members.

[0042] The inner cylinder 201 is a cylindrical member having a diameter that is substantially the same as that of the pin through-hole 200a. The outer cylinder 202 has a diameter that matches the outer diameter of the inner cylinder 201, that is, a diameter that is slightly larger than the outer diameter of the inner cylinder 201, and the inner cylinder 201 is disposed inside the outer cylinder 202 in a detachable manner.

[0043] The outer cylinder 202 is inserted into the through hole 200b for the pin, and the outer side and the upper part of the outer cylinder 202 are bonded to the through hole 200b for the pin by the bonding layer 8, so that the outer cylinder 202 is fixed to the base 2a. The inner cylinder 201 is inserted into the through hole 200b for the pin in which the outer cylinder 202 is fixed. At the top end of the inner cylinder 201, a convex portion 209a is formed by extending in the outer circumference in the circumferential direction. The O-ring 203 is provided on the top end surface 201a inside the convex portion 209a of the inner cylinder 201. The top end surface 201a of the inner cylinder 201 is a flat surface surrounded by the convex portion 209a. The inner cylinder 201 is configured to be detachable from and attachable to the through hole 200b for the pin together with the O-ring 203. The lower ends of the inner cylinder 201 and the outer cylinder 202 protrude downward in a manner that the cross section is in an L shape, and the protruding portions of the inner cylinder 201 and the outer cylinder 202 are fitted into the steps of the base 2a. Thus, the inner cylinder 201 and the outer cylinder 202 are positioned. In this state, the inner cylinder 201 pushes the O-ring 203 from below and brings it into contact with the back surface 22 of the electrostatic chuck 6. With this structure, the O-ring 203 is provided between the inner cylinder 201 and the electrostatic chuck 6. An O-ring 207 is provided in the concave portion on the side wall of the inner cylinder 201 fitted into the step of the base 2a. The O-ring 207 mainly functions to prevent the inner cylinder 201 from falling and to cut off the atmospheric space and the vacuum space.

[0044] The bonding layer 8 is provided from the protruding portion of the outer cylinder 202 to the side portion of the bonding layer 7 and the upper end of the outer cylinder 202. Herein, the bonding layer 7 and the bonding layer 8 may be formed of different materials.

[0045] The O-ring 203 is in contact with the top end surface 201a of the inner cylinder 201 and the back surface 22 of the electrostatic chuck 6, and expands and contracts by being pushed by the top end surface 201a of the inner cylinder 201, thereby closing the plasma space and preventing the bonding layers 7 and 8 from being exposed to the plasma space. Thus, it is possible to prevent the radicals of the plasma from entering the position on the bonding layers 7 and 8 side of the O-ring 203 in the through hole 200 for the pin. Thus, it is possible to prevent the bonding layers 7 and 8 from being consumed.

[0046] The O-ring 203 is preferably formed of a material having plasma resistance. For example, the O-ring 203 may be formed of a fluorine-containing material. As an example of the fluorine-containing material, vinylidene fluoride-based (FKM), polytetrafluoroethylene (PTFE) can be cited. As other examples of the fluorine-containing material, fluorine-containing materials such as tetrafluoroethylene-perfluoroethylene ether (FFKM) can be cited.

[0047] The O-ring 203 is not fixed using an adhesive layer. Additionally, the inner cylinder 201 is disposed inside the through-hole 200b for the pin in a manner that enables it to be detached from the base 2a together with the O-ring 203. Thus, by allowing the inner cylinder 201 to be detached together with the O-ring 203, the O-ring 203 can be replaced. As a result, when the O-ring 203 deteriorates due to plasma radicals or the like, leading to a decline in the sealing effect, the O-ring 203 can be easily replaced, thereby improving maintainability. Additionally, there is no need to replace the mounting table 2 itself due to the deterioration of the O-ring 203, thus reducing costs.

[0048] Furthermore, the O-ring 203 is disposed in the space surrounded by the inner cylinder 201 and the back surface 22 of the electrostatic chuck 6 in a manner separated from the outer cylinder 202. Thus, by providing a distance between the surface of the O-ring 203 and the base 2a and further providing an insulating member such as the outer cylinder 202 therebetween, it is possible to prevent creeping discharge occurring between the surface of the O-ring 203 and the base 2a caused by plasma entering the through-hole 200 for the pin.

[0049] The O-ring 203 is a ring-shaped member that is pushed and deformed by the top surface 201a of the inner cylinder 201. The O-ring 203 can also be provided in an elongated shape where the longitudinal length of the cross-section is greater than the transverse length. Thus, the compression rate of the O-ring 203 in the vertical direction can be increased, enhancing the sealing effect generated by the O-ring 203 and reliably avoiding the situation where the adhesive layers 7 and 8 are exposed to plasma and consumed. Additionally, by making the O-ring 203 an elongated shape, the distance between the O-ring 203 and the outer cylinder 202 can be increased. Thus, the space for the O-ring 203 to expand due to heat input from plasma or the like can be ensured. Additionally, by chamfering the corners at the upper end of the inner cylinder 201 to make them round, the space for the O-ring 203 to expand due to heat input from plasma or the like can also be enlarged.

[0050] In the present embodiment, the outer cylinder 202 is fixed, but it can also be configured to be detachable from the base 2a. That is, the inner cylinder 201 and the outer cylinder 202 are configured such that at least the inner cylinder 201 can be detached from the base 2a together with the O-ring 203.

[0051] The O-ring 203 is provided between the back surface of the wafer mounting portion and the sleeve, and is an example of a sealing member that seals the first adhesive layer in a manner separated from the adhesive layer. The adhesive layer 7 is an example of the first adhesive layer. The inner cylinder 201 is an example of the first sleeve, and the outer cylinder 202 is an example of the second sleeve provided outside the first sleeve. The outer cylinder 202 is fixed to the base 2a inside the through-hole 200b for the pin by the second adhesive layer. The adhesive layer 8 is an example of the second adhesive layer.

[0052] In addition, the inner cylinder 201 and the outer cylinder 202 are examples of cylindrical sleeves, and they may be formed integrally without being divided into two. In this case, the integrated sleeve is configured to be detachable from the base 2a together with the O-ring 203.

[0053] However, it is preferable to divide the sleeve into the inner cylinder 201 and the outer cylinder 202 as in the present embodiment. Thereby, an insulating member of the outer cylinder 202 can be provided between the O-ring 203 and the adhesive layers 7 and 8, and the distance between the O-ring 203 and the adhesive layers 7 and 8 can be increased. Thereby, the withstand voltage can be ensured, and the surface discharge occurring between the O-ring 203 and the surface of the base 2a can be suppressed. In addition, it is preferable to divide the sleeve into the inner cylinder 204 and the outer cylinder 205. Further, the adhesive 8 on the upper surfaces of the outer cylinders 202 and 205 can be made as thin as possible.

[0054] In addition, in consideration of the free radical resistance, the adhesive layer 7 can be formed of, for example, epoxy resin, and the adhesive layer 8 can be formed of, for example, silicone resin. However, in the present embodiment, since the sealing effect generated by the O-ring 203 can be improved, the adhesive layers 7 and 8 can be formed of either silicone resin or epoxy resin without considering the free radical resistance. In addition, the adhesives used for the adhesive layers 7 and 8 may be the same material or different materials.

[0055] In addition, the electrostatic chuck 6 has a gas through-hole 30a, and the base 2a has a gas through-hole 30b. The inner wall of the gas through-hole 30a is formed by the electrostatic chuck 6. The inner wall of the gas through-hole 30b is formed by the base 2a. The gas through-hole 30a communicates with the gas through-hole 30b, whereby the gas through-hole 30 is formed in the mounting table 2. The gas through-hole 30 supplies helium for heat transfer from the lower side of the base 2a to the back surface of the wafer W placed on the mounting surface 21 of the electrostatic chuck 6.

[0056] The aperture of the gas through-hole 30b is larger than that of the gas through-hole 30a. Moreover, an inner cylinder 204 and an outer cylinder 205 are arranged on the inner wall of the gas through-hole 30b, and a part of the gas through-hole 30 is formed by the inner cylinder 204 and the outer cylinder 205. At the top end of the inner cylinder 204, a convex portion 210a is formed in the circumferential direction so as to extend on the outer circumference. An O-ring 206 is provided on the top end surface 204a inside the convex portion 210a of the inner cylinder 204. The top end surface 204a of the inner cylinder 201 is a flat surface surrounded by the convex portion 210a. The O-ring 206 is provided between the inner cylinder 204 and the electrostatic chuck 6. An O-ring 208 is provided in a recess on the side wall of the inner cylinder 204 fitted into the step of the base 2a. The O-ring 208 mainly functions to cut off the atmospheric space and the vacuum space. The other structures of the inner cylinder 204, the outer cylinder 205, and the O-ring 206 are the same as the other structures of the inner cylinder 201, the outer cylinder 202, and the O-ring 203, respectively, and thus the description thereof is omitted here.

[0057] Before the inner cylinder 204 is inserted, the outer cylinder 205 is inserted into the gas through-hole 30b, and its side portion and upper portion are bonded to the gas through-hole 30b by an adhesive layer 8, so that the outer cylinder 205 is fixed to the base 2a. The inner cylinder 204 can be detached from the gas through-hole 30b together with the O-ring 206 provided on its upper part.

[0058] The O-ring 206 is an annular member that is pushed and deformed by the top end surface 204a of the inner cylinder 204. The O-ring 206 can also be set to a longitudinally long shape in which the longitudinal length of the cross section is greater than the transverse length. The O-ring 206 seals the adhesive layer 7, 8 side with respect to the plasma space by contacting the inner cylinder 204 and the back surface 22 of the electrostatic chuck 6. Thereby, it is possible to prevent the radicals of the plasma from entering the inside of the gas through-hole 30b and deteriorating the adhesive layers 7, 8. In addition, by providing an insulating member of the outer cylinder 205 between the O-ring 206 and the adhesive layers 7, 8, the distance between the O-ring 206 and the adhesive layers 7, 8 can be increased to provide a space. Therefore, the sealing effect generated by the O-ring 206 can be ensured and the withstand voltage can be ensured, thereby suppressing the creeping discharge occurring between the O-ring 206 and the surface of the base 2a. In addition, the O-ring 206 can also have the same shape and material as the O-ring 203.

[0059] In addition, the electrostatic chuck 6 has a mounting surface 21 for mounting the wafer W and is an example of a wafer mounting portion formed with a first through-hole. In addition, the pin through-hole 200 and the gas through-hole 30 are examples of the first through-holes formed in the wafer mounting portion. The wafer mounting portion may also have at least any one of the pin through-hole 200 and the gas through-hole 30.

[0060] That is, the hole formed by the first through-hole and the second through-hole of the mounting stage 2 is at least one of the hole (pin through-hole 200) through which the lift pin 61 for holding the wafer W penetrates and the hole (gas through-hole 30) for supplying the heat transfer gas.

[0061] In addition, consider the case where a through-hole similar to the pin through-hole 200 is provided in the mounting stage 2 located on the lower surface of the edge ring 5, and there is a pin that can move up and down in the through-hole and a drive mechanism for moving the pin up and down. In this case, the O-ring, inner cylinder, and outer cylinder of the above structure are assembled and set in the through-hole into which the pin is inserted. Thus, it is also possible to prevent the radicals of the plasma from entering the inside of the through-hole and deteriorating the adhesive layer by using the provided O-ring.

[0062] As described above, according to the mounting stage 2 according to the present embodiment, the O-rings 203, 206 are in contact with the back surfaces 22 of the inner cylinders 201, 204 and the electrostatic chuck 6, and the adhesive layer 7, 8 side is sealed with respect to the plasma space. Thus, it is possible to prevent the radicals of the plasma from entering the inside of the pin through-hole 200 and the gas through-hole 30 and deteriorating the adhesive layer 7, 8, and the situation of abnormal discharge caused by the entry of the plasma.

[0063] In addition, the electrostatic chuck 6 is an example of a wafer mounting portion, and the mounting stage 2 may not have the electrostatic chuck 6. In this case, the wafer mounting portion does not have the function of electrostatically adsorbing the wafer W by the electrostatic chuck 6.

[0064] [Modification Example]

[0065] Regarding the mounting stage 2 according to a modification example of an embodiment, refer to Figure 3 and Figure 4 for description. Figure 3 of (a) to Figure 3 of (c), Figure 4 of (a) and Figure 4 of (b) are diagrams showing an example of the mounting stage 2 according to a modification example of an embodiment. In addition, the following describes the modified structure of the inner cylinder 201, the outer cylinder 202, and the O-ring 203, but the inner cylinder 204, the outer cylinder 205, and the O-ring 206 can also have the modified structure.

[0066] In Figure 3In the first modification example shown in (a) of [reference], a convex portion 209b is formed in the circumferential direction at the top end of the inner cylinder 201 so as to extend along the outer circumference of the inner cylinder 201. The O-ring 203 is provided on the top end surface 201a inside the convex portion 209b of the inner cylinder 201. The top end surface 201a of the inner cylinder 201 is a flat surface surrounded by the convex portion 209b. The inner side surface of the convex portion 209b has a groove 209b1 inclined such that its upper part is positioned more inward than its lower part. Thus, when the O-ring 203 is pushed and expanded / contracted by the top end of the inner cylinder 201, the O-ring 203 enters the groove 209b1, causing the inner cylinder 201 and the O-ring 203 to engage with each other without coming off.

[0067] In Figure 3 In the second modification example shown in (b) of [reference], a convex portion 209c is formed in the circumferential direction at the top end of the inner cylinder 201 so as to extend along the inner circumference of the inner cylinder 201. The upper part of the convex portion 209c protrudes horizontally toward the outer side in the radial direction. Thus, the top end of the inner cylinder 201 has a groove 209c1 and has an L-shape.

[0068] The O-ring 203 is provided on the top end surface 201a outside the convex portion 209c of the inner cylinder 201. The O-ring 203 is configured to have a shape with a cross-section in the shape of the Japanese kana character "コ" facing the opposite direction to the groove 209c1. When the O-ring 203 is pushed and expanded / contracted by the top end of the inner cylinder 201, the O-ring 203 enters between the groove 209c1 and the upper surface of the convex portion 209c on the back surface 22 of the electrostatic chuck 6, causing the inner cylinder 201 and the O-ring 203 to engage with each other without coming off.

[0069] In Figure 3 In the third modification example shown in (c) of [reference], a convex portion 209d is formed in the circumferential direction at the top end of the inner cylinder 201 so as to extend along the inner circumference of the inner cylinder 201. The upper part of the convex portion 209d protrudes horizontally toward the outer side in the radial direction. Thus, the top end of the inner cylinder 201 has a groove 209d1 and has an L-shape.

[0070] The O-ring 203 is provided on the top end surface 201a outside the convex portion 209d of the inner cylinder 201. The O-ring 203 has an L-shape such that its lower part protrudes toward the inner circumferential side and fits into the groove 209d1. It is configured that when the O-ring 203 is pushed and expanded / contracted by the top end of the inner cylinder 201, the inner cylinder 201 and the O-ring 203 engage with each other in the groove 209d1 without coming off.

[0071] According to the above-described Figure 3 of (a) to Figure 3 The mounting table 2 according to the first to third modification examples shown in (c) can integrate the inner cylinder 201 and the O-ring 203.

[0072] In Figure 4In the modification example 4 shown in (a) of [reference], at the top end of the inner cylinder 201, a convex portion 209a is formed in the circumferential direction so as to extend along the outer circumference of the inner cylinder 201, and a convex portion 209e is formed in the circumferential direction so as to extend along the inner circumference of the inner cylinder 201. A groove 209e1 is formed between the convex portion 209a and the convex portion 209e. The upper part of the convex portion 209a is provided on the back surface 22 of the electrostatic chuck 6, thereby fixing the position of the inner cylinder 201.

[0073] A slight gap D is provided between the upper part of the convex portion 209e and the back surface 22 of the electrostatic chuck 6. The O-ring 203 is arranged in such a way that the annular member is divided into two halves and the dividing surface contacts the bottom surface of the groove 209e1. Thus, the O-ring 203 has a semi-ring shape and is arranged in the groove 209e1. It is configured such that when the O-ring 203 is pushed and deformed by the top end of the inner cylinder 201, the inner cylinder 201 and the O-ring 203 engage with each other in the groove 209e1 and do not come off.

[0074] As Figure 4 shown in the modification example 5 of (b) of [reference], the width of the convex portion 209e in the radial direction can be increased and the length of the groove 209e1 in the radial direction can be decreased compared to Figure 4 the modification example 4 of (a) of [reference]. The O-ring 203 is arranged in the groove 209e1 of the inner cylinder 201. The O-ring 203 is arranged in such a way that the annular member is divided into two halves and the dividing surface contacts the inner circumferential surface of the convex portion 209a. Thus, the O-ring 203 has a semi-ring shape and is fitted into the groove 209e1. It is configured such that when the O-ring 203 is pushed and deformed by the top end of the inner cylinder 201, the inner cylinder 201 and the O-ring 203 engage with each other in the groove 209e1 and do not come off.

[0075] According to the above-described Figure 4 modification examples 4 and 5 shown in (a) and Figure 4 modification example 5 shown in (b) of [reference], the mounting table 2 can integrate the inner cylinder 201 and the O-ring 203.

[0076] It should be considered that the mounting table and the substrate processing apparatus according to one embodiment disclosed herein are illustrative in all respects and not restrictive. The above-described embodiments can be deformed and improved in various shapes as long as they do not depart from the claims and their gist. The matters described in the above-described multiple embodiments can also adopt other structures within a non-contradictory range, and can be combined within a non-contradictory range.

[0077] In this specification, as an example of the substrate, a wafer W has been described. However, the substrate is not limited thereto, and can also be various substrates used for FPD (Flat Panel Display), printed circuit boards, and the like.

[0078] In addition, the substrate processing apparatus 100 can also be applied to any type of substrate processing apparatus such as Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP). The substrate processing apparatus 100 can be either a plasma-using apparatus or a non-plasma-using apparatus.

Claims

1. A mounting stage, wherein, the mounting stage has: a wafer mounting portion having a mounting surface for mounting a wafer and formed with a first through hole; a base bonded to the back surface of the wafer mounting portion by a first adhesive layer and formed with a second through hole communicating with the first through hole, the second through hole having a larger aperture than the aperture of the first through hole; a cylindrical sleeve provided inside the second through hole so as to be detachable from the base together with an O-ring; and the O-ring provided between the back surface of the wafer mounting portion and the sleeve so as to be separated from the first adhesive layer to seal the first adhesive layer, a convex portion is integrally formed with the sleeve in the circumferential direction of the sleeve so as to extend along the outer circumference of the top end of the sleeve, the inner side surface of the convex portion has a groove inclined such that the upper portion of the convex portion is located more inward than the lower portion of the convex portion, the O-ring is pushed by the top end surface of the sleeve to expand and contract, the sleeve has a first sleeve and a second sleeve provided outside the first sleeve, wherein the lower end of the first sleeve and the lower end of the second sleeve respectively protrude at the lower portion of the first sleeve and the lower portion of the second sleeve in a manner that the cross section is L-shaped, the lower end of the first sleeve and the lower end of the second sleeve protruding at the lower portion of the first sleeve and the lower portion of the second sleeve are inserted and fitted into the step of the base, and the upper end of the first sleeve and the upper end of the second sleeve are both provided inside the second through hole.

2. The mounting stage according to claim 1, wherein, the O-ring is not fixed by an adhesive layer.

3. The mounting stage according to claim 1 or 2, wherein, at least the first sleeve is configured to be detachable from the base together with the O-ring.

4. The mounting stage according to claim 3, wherein, the O-ring is disposed in a space surrounded by the first sleeve, the second sleeve, and the back surface of the wafer mounting portion so as to be separated from the second sleeve.

5. The mounting stage according to claim 4, wherein, the second sleeve is bonded to the base inside the second through hole by a second adhesive layer.

6. The mounting stage according to claim 5, wherein, the first adhesive layer and the second adhesive layer are formed of different materials, the first adhesive layer bonds the back surface of the wafer mounting portion and the base, and the second adhesive layer bonds the second sleeve and the base.

7. The mounting stage according to claim 1 or 2, wherein, the hole formed by the first through hole and the second through hole is at least one of a hole through which a lift pin for holding a wafer penetrates and a hole for supplying a heat transfer gas.

8. A substrate processing apparatus, wherein, the substrate processing apparatus has: a processing chamber; and a mounting stage provided inside the processing chamber, the mounting stage has: a wafer mounting portion having a mounting surface for mounting a wafer and formed with a first through hole; A base, which is bonded to the back surface of the wafer mounting portion by a first adhesive layer and is formed with a second through hole communicating with the first through hole, and the second through hole has a larger aperture than that of the first through hole; A cylindrical sleeve, which is disposed inside the second through hole in a manner that can be detached from the base together with an O-ring; and The O-ring, which is disposed between the back surface of the wafer mounting portion and the sleeve in a manner separated from the first adhesive layer to seal the first adhesive layer, A convex portion is integrally formed with the sleeve in the circumferential direction of the sleeve so as to extend along the outer circumference of the top end of the sleeve, The inner side surface of the convex portion has a groove inclined in such a manner that the upper portion of the convex portion is located more inward than the lower portion of the convex portion, The O-ring is pushed by the top end surface of the sleeve to expand and contract, The sleeve has a first sleeve and a second sleeve disposed outside the first sleeve, Wherein, the lower ends of the first sleeve and the second sleeve respectively protrude from the lower portions of the first sleeve and the second sleeve in a manner that the cross section is L-shaped, The lower ends of the first sleeve and the second sleeve protruding from the lower portions of the first sleeve and the second sleeve are inserted and fitted into the step of the base, and The upper ends of the first sleeve and the second sleeve are both disposed inside the second through hole.

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