Semiconductor module

Abstract

This invention provides a semiconductor module. The semiconductor module includes: a cooler having a first flow path and a second flow path arranged separately and side-by-side, and a third flow path connecting the first and second flow paths; and a laminated substrate mounted on the cooler, having a plurality of circuit boards arranged in a direction intersecting the third flow path. The plurality of circuit boards include a first circuit board connected to a P-terminal, a second circuit board connected to an N-terminal, and a third circuit board connected to an M-terminal. On the first circuit board, a first sensing chip with temperature sensing function and a first non-sensing chip without sensing function are arranged along the third flow path. On the third circuit board, a second sensing chip with sensing function and a second non-sensing chip without sensing function are arranged along the third flow path. The first sensing chip is biased towards the second flow path side, and the second sensing chip is biased towards the first flow path side.

Description

Technical Field

[0001] This invention relates to a semiconductor module. Background Technology

[0002] Semiconductor devices have substrates containing semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors), power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), and FWDs (Free Wheeling Diodes), and are used in inverter devices, etc.

[0003] Inverter devices, widely used in residential and industrial applications for driving electric motors, consist of semiconductor switching elements such as MOSFETs and IGBTs (switching elements) and integrated circuits (IC chips) used to drive these semiconductor switching elements. Furthermore, as a unit for miniaturizing the device and incorporating built-in protection circuitry, an IPM (Intelligent Power Module) is used, which encapsulates the aforementioned switching elements and IC chip into a single package.

[0004] In conventional semiconductor devices (semiconductor modules), thermistors are used as temperature sensors to detect the temperature of semiconductor components. However, thermistors cannot directly monitor chip temperature, so various specific deviations of the product, such as device characteristic deviations and packaged thermistor resistance deviations, must be considered in the thermal design of the device. Therefore, a so-called on-chip sensor-integrated semiconductor module (see, for example, Patent Documents 1-3) has been proposed, which integrates functions such as temperature sensors and current sensors.

[0005] In Patent Document 1, multiple semiconductor chips are arranged on a circuit board with an insulating substrate. Each semiconductor chip incorporates a temperature sensing diode for overheat protection. In Patent Document 2, multiple semiconductor chips are arranged on a drain substrate. Each semiconductor chip has a sensing node through which a sensing current flows. A predetermined output voltage can be detected based on the current flowing to the sensing node. Furthermore, Patent Document 3 discloses an IGBT with current sensing. This IGBT includes a current sensing section and a temperature sensing diode section.

[0006] Prior art literature

[0007] Patent documents

[0008] Patent Document 1: International Publication No. 2016 / 174899

[0009] Patent Document 2: International Publication No. 2015 / 125281

[0010] Patent Document 3: Japanese Patent Application Publication No. 2007-287988 Summary of the Invention

[0011] The problem the invention aims to solve

[0012] In addition, the semiconductor components with built-in on-chip sensors mentioned above are expensive. Therefore, if all semiconductor components configured in the module are made to be built-in on-chip sensors, it may affect the overall cost of the module.

[0013] The present invention was made in view of the aforementioned problems, and one of its objectives is to provide a semiconductor module capable of monitoring internal temperature in an inexpensive structure.

[0014] Solutions for solving problems

[0015] A semiconductor module according to one aspect of the present invention includes: a cooler having a first flow path and a second flow path arranged separately and side by side, and a third flow path connecting the first flow path and the second flow path; and a laminated substrate mounted on the cooler having a plurality of circuit boards arranged in a direction intersecting the third flow path, wherein the plurality of circuit boards have a first circuit board connected to a P terminal, a second circuit board connected to an N terminal, and a third circuit board connected to an M terminal; on the first circuit board, a first sensing chip having a temperature sensing function and a first non-sensing chip without the sensing function are arranged along the third flow path; on the third circuit board, a second sensing chip having the sensing function and a second non-sensing chip without the sensing function are arranged along the third flow path; the first sensing chip is disposed biased toward the second flow path side, and the second sensing chip is disposed biased toward the first flow path side.

[0016] The effects of the invention

[0017] According to the present invention, the internal temperature of a semiconductor module can be monitored in an inexpensive manner. Attached Figure Description

[0018] Figure 1 This is a top view showing an example of a semiconductor module involved in this embodiment.

[0019] Figure 2 Viewed from the lower surface side Figure 1 The diagram obtained from the semiconductor modules involved.

[0020] Figure 3 yes Figure 1 A partial enlarged view of the unit multilayer substrate.

[0021] Figure 4 It is along the YZ plane Figure 3 The image shows a cross-sectional view obtained by cutting the semiconductor module.

[0022] Figure 5 It is an equivalent circuit diagram representing the sensing function of a semiconductor element.

[0023] Figure 6 This is a planar schematic diagram of the semiconductor module involved in the reference example.

[0024] Figure 7 This is a top view of the semiconductor module involved in the variation example.

[0025] Description of Reference Numerals

[0026] 1: Semiconductor module; 2: Laminated substrate; 3: Semiconductor element; 3a: Semiconductor element (first sensing chip); 3b: Semiconductor element (first non-sensing chip); 3c: Semiconductor element (second sensing chip); 3d: Semiconductor element (second non-sensing chip); 4: Thermistor; 10: Substrate; 11: Housing component; 12: Cooler; 12a: Fin; 12b: Cooling housing; 12c: Recess; 12d: Inlet; 12e: Outlet; 13: Annular wall; 13a: Stepped portion; 14: Terminal component; 15: Inner terminal portion; 16: Outer terminal section; 17: Sealing resin; 20: Insulating plate; 21: Heat sink; 22: Circuit board; 23: First circuit board; 24: Second circuit board; 25: Third circuit board; 26a: Gate pad; 26b: Emitter pad; 27a: Gate pad; 27b: Emitter pad; 28: Electrode pad; 30: IGBT element; 31: FWD element; 32: Temperature sensing diode; F1: First flow path (refrigerant flow path); F2: Second flow path (refrigerant flow path); F3: Third flow path (refrigerant flow path); S: Bonding material; W: Wiring component. Detailed Implementation

[0027] The following describes a semiconductor module to which the present invention can be applied. Figure 1 This is a top view showing an example of a semiconductor module involved in this embodiment. Figure 2 Viewed from the lower surface side Figure 1 The diagram obtained from the semiconductor modules involved. Figure 3 yes Figure 1 A partial enlarged view of the unit multilayer substrate. Figure 4 It is along the YZ plane Figure 3 The image shows a cross-sectional view obtained by cutting the semiconductor module. Figure 5This is an equivalent circuit diagram representing the sensing function of a semiconductor element. Furthermore, the semiconductor module shown below is merely an example and is not limited to it; it can be modified as appropriate.

[0028] Furthermore, in the diagram below, the long side direction of the semiconductor module (the direction in which the multiple stacked substrates are arranged, as described later) is defined as the X direction, the short side direction as the Y direction, and the height direction as the Z direction. The X, Y, and Z axes in the diagram are orthogonal to each other, forming a right-handed system. Additionally, depending on the situation, the X direction may sometimes be referred to as the left-right direction, the Y direction as the front-back direction, and the Z direction as the up-down direction. These directions (front-back, left-right, up-down) are terms used for ease of explanation, and their correspondence with the XYZ directions may change depending on the mounting orientation of the semiconductor module. For example, the heat dissipation surface side (cooler side) of the semiconductor module may be referred to as the lower surface side, and its opposite side as the upper surface side. Furthermore, in this specification, "top view" refers to the view of the upper surface of the semiconductor module from the Z-direction.

[0029] Semiconductor module 1 is used in power conversion devices such as power modules. In this embodiment, semiconductor module 1 is a 6-in-1 type power module that constitutes an inverter circuit. Figures 1 to 4 As shown, the semiconductor module 1 is configured to include: a substrate 10; a plurality of stacked substrates 2 disposed on the substrate 10; a plurality of semiconductor elements 3 disposed on the stacked substrates 2; a housing member 11 that houses the plurality of stacked substrates 2 and the plurality of semiconductor elements 3; and a cooler 12 disposed on the lower surface of the substrate 10.

[0030] The base plate 10 is a rectangular plate having an upper surface and a lower surface. The base plate 10 functions as a heat sink. Furthermore, the base plate 10 has a shape that is elongated in the X direction and rectangular when viewed from above. The base plate 10 may be a metal plate made of, for example, copper, aluminum, or their alloys, and its surface may be plated.

[0031] A frame-shaped housing member 11 is disposed on the upper surface of the base plate 10. The housing member 11 is molded, for example, from synthetic resin and is bonded to the upper surface of the base plate 10 by means of an adhesive (not shown). The housing member 11 has a rectangular shape following the outline of the base plate 10 and has an annular wall portion 13 with an opening formed in the center. The annular wall portion 13 is formed to stand upright in the Z direction. A plurality of terminal members 14 are provided on the annular wall portion 13. The terminal members 14 will be described later.

[0032] Furthermore, three laminated substrates 2 are arranged in the X direction on the inner side of the annular wall portion 13 and on the upper surface of the base plate 10. These three laminated substrates 2 constitute the U phase, V phase, and W phase of the inverter circuit. In this embodiment, from Figure 1 Starting from the right side of the paper, the configuration is U-phase, V-phase, and W-phase.

[0033] The laminated substrate 2 is formed by laminating metal layers and insulating layers, and may be composed of, for example, a DCB (Direct Copper Bonding) substrate, an AMB (Active Metal Brazing) substrate, or a metal substrate. Specifically, the laminated substrate 2 has an insulating plate 20, a heat sink 21 disposed on the lower surface of the insulating plate 20, and a plurality of circuit boards 22 disposed on the upper surface of the insulating plate 20. The laminated substrate 2 is formed, for example, in a generally square shape when viewed from above.

[0034] The insulating plate 20 is formed as a flat plate having a predetermined thickness in the Z direction and having an upper surface and a lower surface. The insulating plate 20 is formed from insulating materials such as ceramic materials like alumina (Al2O3), aluminum nitride (AlN), and silicon nitride (Si3N4), resin materials like epoxy, or epoxy resin materials using ceramic materials as fillers. Alternatively, the insulating plate 20 may also be referred to as an insulating layer or insulating film.

[0035] The heat sink 21 is formed to have a specified thickness in the Z direction and to cover the entire lower surface of the insulating plate 20. The heat sink 21 is formed, for example, from a metal plate with good thermal conductivity such as copper or aluminum.

[0036] On the upper surface (main surface) of the insulating board 20, a plurality of circuit boards 22 are formed in an island-like manner, electrically insulated from each other. Specifically, the plurality of circuit boards 22 are configured to include a first circuit board 23 connected to a positive potential point (P terminal), a second circuit board 24 connected to a negative potential point (N terminal), and a third circuit board 25 connected to an intermediate potential point (M terminal). These circuit boards 22 are made of a metal layer of a specified thickness, which is formed of copper foil or the like.

[0037] The first circuit board 23 has a rectangular shape when viewed from above, extending in the Y direction along one side of the laminated substrate 2 in the X direction. The first circuit board 23 is slightly cut off from the outer side in the X direction at approximately its center in the Y direction. At the cut-off portion, gate pads 26a and emitter pads 26b are formed in a Y-direction arrangement. The gate pad 26a is located on the terminal member 14 side of the upper arm (positive side in the Y direction).

[0038] The second circuit board 24 has an elongated shape extending in the Y direction from approximately the center in the X direction of the laminated substrate 2. One end of the second circuit board 24 is slightly curved in the X direction, and the whole circuit board is roughly L-shaped when viewed from above.

[0039] The third circuit board 25 has a roughly U-shaped form when viewed from above: it extends in the Y direction along one side of the other side of the laminated substrate 2 in the X direction, bends back at the other end of the second circuit board 24, and then extends in the Y direction such that the second circuit board 24 is sandwiched in the middle. The third circuit board 25 is slightly cut off from the outside to the inside in the X direction at approximately the center in the Y direction. At the cut-off portion, gate pads 27a and emitter pads 27b are formed in a Y-direction arrangement. The gate pad 27a is located on the terminal member 14 side of the lower arm (negative side in the Y direction). These three circuit boards 22 are connected to the third flow path F3 (see below), which forms part of the refrigerant flow path. Figure 2 The arrangement is set in the direction of intersection (X direction).

[0040] At a predetermined location on the upper surface of circuit board 22, a bonding material S (see reference) is used to bond the components. Figure 4 The device is equipped with multiple semiconductor elements 3. The semiconductor elements 3 are formed from semiconductor substrates such as silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) in a square shape when viewed from above. In this embodiment, the semiconductor element 3 is composed of an RC (Reverse Conducting)-IGBT element, which integrates the functions of an IGBT (Insulated Gate Bipolar Transistor) element and an FWD (Free Wheeling Diode) element.

[0041] Furthermore, the semiconductor element 3 is not limited to this; it can also be constructed by combining switching elements such as IGBTs, power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), BJTs (Bipolar Junction Transistors), and diodes such as FWDs (Free Wheeling Diodes). Additionally, RB (Reverse Blocking)-IGBTs, which have sufficient withstand voltage to reverse bias, can also be used as the semiconductor element 3. Furthermore, the shape, number, and arrangement of the semiconductor elements 3 can be appropriately varied. The semiconductor element 3 can be located in a semiconductor substrate having a first surface and a second surface opposite to the first surface, with an emitter, source, or anode electrode on the first surface and a collector, drain, or cathode electrode on the second surface. As a switching element, the semiconductor element 3 can have a gate electrode on the first surface of the semiconductor substrate and further have a sensing electrode.

[0042] In this embodiment, each laminated substrate 2 (each phase) is provided with four semiconductor elements 3. Specifically, two semiconductor elements 3a and 3b disposed on the upper surface of the first circuit board 23 constitute the upper arm. In addition, two semiconductor elements 3c and 3d disposed on the upper surface of the third circuit board 25 constitute the lower arm. That is, the upper arm and the lower arm are arranged laterally on the upper surface of the laminated substrate 2 in the X direction. The chip mounting portion of the circuit board 23, the wiring member connection portion of the circuit board 25, the circuit board 24, and the chip mounting portion of the circuit board 25 are sequentially disposed along the X direction.

[0043] Each of the two semiconductor elements constituting the upper and lower arms is further divided into a sensing chip with a defined sensing function and a non-sensing chip without such sensing function. Specifically, semiconductor elements 3a and 3c are sensing chips with sensing functions for detecting the temperature and current of the chip. On the other hand, semiconductor elements 3b and 3d are non-sensing chips without these sensing functions. That is, each upper and lower arm has one sensing chip and one non-sensing chip. Each arm may also have three or more semiconductor elements, including at least one sensing chip.

[0044] In the upper arm, semiconductor elements 3a and 3b are connected in parallel and arranged along the Y direction. Similarly, in the lower arm, semiconductor elements 3c and 3d are connected in parallel and arranged along the Y direction. Thus, the sensing chip and the non-sensing chip are arranged in a direction orthogonal to the arrangement direction (X direction) of the upper and lower arms (Y direction). In the upper and lower arms, the sensing chip and the non-sensing chip are arranged in opposite directions, as detailed later. That is, semiconductor elements 3a and 3c are positioned obliquely facing each other when viewed from above. Semiconductor elements 3a and 3c can be arranged diagonally opposite each other on the laminated substrate 2.

[0045] Here, refer to Figure 5 To illustrate the sensing function of semiconductor components (sensor chips). For example... Figure 5 As shown, semiconductor elements 3a and 3c have an IGBT element 30, an FWD element 31, and a temperature sensing diode 32 in the semiconductor substrate.

[0046] One end of the IGBT element 30 is connected to the gate (G), and the other end is connected to the collector (C), emitter (E), and sense emitter (S). The FWD element 31 is connected in reverse parallel between the emitter and collector of the IGBT element 30.

[0047] One end of the temperature sensing diode 32 is connected to the anode (A), and the other end is connected to the cathode (K). The temperature sensing diode 32 detects the chip temperature based on the voltage between the anode and cathode. The sensing emitter (S) is a terminal that can shunt a portion of the current flowing to the IGBT for detection. By connecting the sensing emitter (S) to, for example, an external current sensing resistor and detecting its voltage, short-circuit protection can be implemented in the event of a short circuit. Regarding this current sensing resistor, conditions can be appropriately set in the design of the control circuit, thereby setting the voltage value at which short-circuit protection is initiated.

[0048] Additionally, a thermistor 4 is disposed on a corner of the upper surface of the laminated substrate 2, near the semiconductor element 3d in the lower arm. The thermistor 4 is used to detect the temperature of the cooling water flowing within the cooler 12 located on the lower surface side of the laminated substrate 2. Furthermore, thermistor 4 is not the only option; other types of temperature-sensing resistors or thermocouples may also be used.

[0049] As described above, a frame-shaped outer shell member 11 is disposed on the upper surface of the laminated substrate 2. The outer shell member 11 has an annular wall portion 13 surrounding the periphery of the three laminated substrates 2. A stepped portion 13a, which descends by a step, is formed on the inner circumferential side of the upper surface of the annular wall portion 13. The upper surface of the stepped portion 13a is positioned at a lower position relative to the upper surface of the annular wall portion 13.

[0050] In addition, such as Figure 1 As shown, a plurality of terminal members 14 are integrally embedded in a pair of opposing walls in the short side direction (Y direction) of the annular wall portion 13. The terminal members 14 are formed, for example, by bending a plate-shaped body of a metal material such as copper, copper alloy, aluminum alloy, or iron alloy. The terminal members 14 have an inner terminal portion 15 exposed on the upper surface of the stepped portion 13a and an outer terminal portion 16 protruding on the upper surface of the annular wall portion 13.

[0051] like Figure 3 As shown, multiple terminal members 14 are arranged along the X-direction in relation to each electrode near the sensing semiconductor elements 3a and 3c. Specifically, five terminal members 14 are arranged along the X-direction near semiconductor element 3a. Additionally, five terminal members 14 are also arranged along the X-direction near semiconductor element 3c. Figure 3As shown, the five terminal members 14 are positioned obliquely facing each other in the Y direction, separated by the laminated substrate 2, when viewed from above. The upper arm terminal member 14 is disposed adjacent to the semiconductor element 3a on the diagonal direction of the laminated substrate 2, and the lower arm terminal member 14 is disposed adjacent to the semiconductor element 3c on the diagonal direction of the laminated substrate 2. The sensing electrodes (S, A, K) of the semiconductor element 3a and the semiconductor element 3c can be disposed opposite each other in the Y direction on the diagonal direction of the laminated substrate 2. The upper arm terminal member 14 and the sensing electrode of the semiconductor element 3a can be electrically connected via a wiring member W. The lower arm terminal member 14 and the sensing electrode of the semiconductor element 3c can be electrically connected via a wiring member W. In the semiconductor element 3a, the gate electrode can be disposed on the opposite side of the sensing electrode. In the semiconductor element 3c, the gate electrode can be disposed on the opposite side of the sensing electrode. Furthermore, a terminal member 14 is also disposed on the annular wall portion 13 near the thermistor 4. Figure 1 As shown, these terminal components 14 are configured to be identical in each phase.

[0052] Each semiconductor element 3, circuit board 22, and terminal component 14 is electrically connected via wiring component W. For example, in the upper arm, semiconductor element 3a is connected to the inner terminal portion 15 via wiring component W, semiconductor element 3a is connected to the third circuit board 25 via wiring component W, semiconductor element 3a is connected to the gate pad 26a via wiring component W, gate pad 26a is connected to the gate-side terminal component 14 via wiring component W, the third circuit board 25 is connected to the emitter pad 26b via wiring component W, and emitter pad 26b is connected to the emitter-side terminal component 14 via wiring component W. Additionally, semiconductor element 3b is also connected to the third circuit board 25 via wiring component W, and semiconductor element 3b is also connected to the gate pad 26a via wiring component W. The gate electrode of semiconductor element 3b can be disposed near the gate electrode of semiconductor element 3a, separated by the gate pad 26a. The third circuit board 25 can also be connected to the emitter pad 26b by a wiring member W configured between the semiconductor elements 3a and 3b, thereby detecting the intermediate potential of the parallel-connected semiconductor elements 3a and 3b.

[0053] In the lower arm, semiconductor element 3c is connected to the inner terminal portion 15 via wiring member W, semiconductor element 3c is connected to the second circuit board 24 via wiring member W, semiconductor element 3d is connected to the gate pad 27a via wiring member W, gate pad 27a is connected to the gate-side terminal member 14 via wiring member W, the second circuit board 24 is connected to the emitter pad 27b via wiring member W, and emitter pad 27b is connected to the emitter-side terminal member 14 via wiring member W. Additionally, semiconductor element 3d is also connected to the second circuit board 24 via wiring member W, and semiconductor element 3d is also connected to the gate pad 27a via wiring member W. The gate electrode of semiconductor element 3d can be disposed near the gate electrode of semiconductor element 3c across the gate pad 27a. Alternatively, the second circuit board 24 can be connected to the emitter pad 27b via wiring member W disposed between semiconductor elements 3c and 3d, thereby detecting the intermediate potential of the parallel-connected semiconductor elements 3c and 3d.

[0054] Furthermore, the thermistor 4 and the inner terminal portion 15 are also connected via wiring components W. These wiring components W use conductor wires (connecting wires). Regarding the material of the conductor wires, any one or a combination of gold, copper, aluminum, gold alloys, copper alloys, and aluminum alloys can be used. Alternatively, components other than conductor wires can be used as wiring components. For example, a ribbon cable can be used as a wiring component.

[0055] Furthermore, the internal space of the housing member 11 defined by the annular wall portion 13 is filled with sealing resin 17. The sealing resin 17 is filled up to the upper surface of the sealing resin 17, for example, up to the upper surface of the annular wall portion 13. As a result, the laminated substrate 2, the semiconductor element 3, the inner terminal portion 15, and the wiring member W are sealed. In addition, epoxy resin or silicone can be used as the sealing resin 17.

[0056] like Figure 2 and Figure 4 As shown, the cooler 12 is configured to include the aforementioned base plate 10 and a plurality of fins 12a (detailed shapes omitted) disposed on the lower surface of the base plate 10. The cooler 12 may also include a cooling housing 12b. As described above, the base plate 10 functions as a heat dissipation plate, and a plurality of laminated substrates 2 are mounted on the upper surface of the base plate 10. The plurality of fins 12a disposed on the lower surface (heat dissipation surface) of the base plate 10 are housed in recesses 12c formed in the cooling housing 12b. Furthermore, the cooling housing 12b may also be referred to as a refrigerant jacket or a water jacket.

[0057] Multiple fins 12a are integrally disposed on the lower surface of the base plate 10. The fins 12a can be made of the same metal material as the base plate 10. The fins 12a are used as heat sinks, or in other words, as heat fins. For example, the fins 12a can be pin fins obtained by arranging multiple square column-shaped needles at predetermined intervals. The structure of the fins 12a is not limited to this and can be appropriately modified. For example, it can be configured to use cylindrical needles instead of square column-shaped needles, or to arrange multiple blade-shaped fins extending along the Y direction parallel to each other. The fins 12a are configured to allow refrigerant to flow along the Y direction.

[0058] Preferably, the region in the substrate 10 where the plurality of fins 12a are disposed includes the region opposite (back side) to the mounting region of the semiconductor element 3 on the multilayer substrate 2 when the multilayer substrate 2 is bonded to the substrate 10. In other words, preferably, the region in which the plurality of fins 12a are integrally disposed on the substrate 10 includes the region directly below the semiconductor element 3. Furthermore, in this embodiment, the plurality of fins 12a are disposed in the region directly below the multilayer substrate 2. In addition, in this embodiment, the assembly of the plurality of fins 12a has a generally cuboid shape. The long side direction of the assembly of the plurality of fins 12a is aligned with the long side direction (X direction) of the semiconductor module 1.

[0059] The cooling housing 12b has a generally cuboid shape, being elongated in the X direction when viewed from above. The cooling housing 12b, when viewed from above, has a shape substantially identical to that of the base plate 10. A recess 12c is formed on the upper surface of the cooling housing 12b. Thus, the cooling housing 12b is formed as a box-shaped structure with an open top. The recess 12c has a shape similar to that of the cooling housing 12b, appearing rectangular when viewed from above.

[0060] The recess 12c is formed to be larger than the overall shape of the assembly of the plurality of fins 12a. More specifically, the width of the recess 12c in the Y direction is set to be sufficiently larger than the width of the assembly of the plurality of fins 12a in the Y direction. Furthermore, the assembly of the plurality of fins 12a is disposed at the center of the recess 12c in the Y direction. As described above, the recess 12c accommodates the plurality of fins 12c. The gap provided between the recess 12c and the plurality of fins 12c defines a refrigerant flow path, in which the refrigerant can flow.

[0061] Specifically, such as Figure 2As shown, the refrigerant flow path is configured to include a first flow path F1 disposed within a recess 12c on the negative Y-direction side of a plurality of fins 12c, a second flow path F2 disposed within a recess 12c on the positive Y-direction side of the plurality of fins 12c, and a third flow path F3 disposed in the gap between the plurality of fins 12c. The first flow path F1 and the second flow path F2 are separated from each other and arranged side by side in the Y-direction. The third flow path F3 is disposed between the first flow path F1 and the second flow path F2, connecting the first flow path F1 and the second flow path F2. The first flow path F1 and the second flow path F2 extend in the X-direction, while the third flow path F3 extends in the Y-direction. Refrigerant supplied from an external device such as a pump passes through the first flow path F1, the third flow path F3, and the second flow path F2, thereby enabling circulation in the cooling system. The refrigerant can pass through the third flow path F3 from the first flow path F1 to the second flow path F2.

[0062] Additionally, the cooling housing 12b is provided with an inlet 12d and an outlet 12e, which serve as the refrigerant's inlet and outlet. For example... Figure 2 As shown, the inlet 12d is configured to communicate with the end of the first flow path F1 on the positive side in the X direction at the bottom wall portion of the cooling housing 12b. The outlet 12e is configured to communicate with the end of the second flow path F2 on the negative side in the X direction at the bottom wall portion of the cooling housing 12b. That is, the inlet 12d and the outlet 12e are configured to face each other obliquely with a plurality of fins 12a between them. Alternatively, the inlet 12d and the outlet 12e may also be provided on the side wall portion of the cooling housing 12b.

[0063] In this embodiment, the refrigerant is introduced into the cooling housing 12b through the inlet 12d, flows through the first flow path F1, then through the third flow path F3, and then through the second flow path F2, before being discharged out of the cooling housing 12b through the outlet 12e. Furthermore, the configuration of the inlet 12d and the outlet 12e is not limited to this and can be appropriately modified. For example, the positional relationship between the inlet 12d and the outlet 12e can be reversed. That is, the refrigerant flow path can also be configured such that the refrigerant flows from the second flow path F2 through the third flow path F3 and then through the first flow path F1.

[0064] Furthermore, in this embodiment, the structure of the cooler 12 is designed to include a cooling housing 12b, but the cooling housing 12b can be of any structure. That is, the cooler 12 can be constructed solely of a base plate 10 and a plurality of fins 12a.

[0065] Furthermore, the power semiconductor module for automotive applications mainly comprises semiconductor elements, an insulating substrate (laminated substrate), and a cooler. The semiconductor element is an RC-IGBT, which integrates IGBT and FWD elements. By embedding the cooler into the module, cooling performance is improved while achieving overall miniaturization and weight reduction. Additionally, in this semiconductor module, a 2-parallel circuit is formed in each of the upper and lower arms, connecting two chips in parallel to conduct high current. One of the two parallel chips has a temperature sensing function for monitoring chip temperature and a current sensing function for detecting current anomalies.

[0066] Here, the structure of a conventional semiconductor module will be explained with reference to a reference example. Figure 6 This is a planar schematic diagram of the semiconductor module involved in the reference example. Figure 6 In the middle, the layout of semiconductor element 3, terminal component 14 and part of circuit board 22 is similar to Figure 2 Different. Therefore, for... Figure 2 Common structures are represented by the same names and symbols, with descriptions omitted appropriately.

[0067] like Figure 6 As shown, in the upper arm, semiconductor elements 3a and 3b are connected in parallel and arranged along the Y direction on the upper surface of the first circuit board 23. In the lower arm, semiconductor elements 3c and 3d are connected in parallel and arranged along the Y direction on the upper surface of the third circuit board 25. Thus, the sensing chip and the non-sensing chip are arranged in a direction orthogonal to the arrangement direction (X direction) of the upper and lower arms (Y direction). Furthermore, in the upper and lower arms, the sensing chip and the non-sensing chip are disposed on the same side in the Y direction. That is, semiconductor elements 3a and 3c are disposed biased towards the Y direction along one edge of the laminated substrate 2 and are arranged to face each other in the X direction.

[0068] Additionally, in the upper arm, on the upper surface of the laminated substrate 2 located between semiconductor elements 3a and 3b, gate pads 26a and emitter pads 26b are formed in a Y-direction arrangement. Similarly, in the lower arm, on the upper surface of the laminated substrate 2 located between semiconductor elements 3c and 3d, gate pads 27a and emitter pads 27b are formed in a Y-direction arrangement. Figure 6 In the middle section, the emitter electrode (E) on the upper arm side is connected to the emitter pad 26b on the insulating plate 20 via the wiring member W. Additionally, the emitter electrode (E) on the lower arm side is connected to the emitter pad 27b on the insulating plate 20 via the wiring member W.

[0069] Furthermore, on the outer side of the semiconductor elements 3a and 3c on the upper surface of the laminated substrate 2 in the Y direction, a plurality of electrode pads 28 are formed corresponding to each electrode of the semiconductor elements 3a and 3c. Specifically, five electrode pads 28 are arranged in the X direction on the side of the semiconductor element 3a, and five electrode pads 28 are arranged in the X direction on the side of the semiconductor element 3c.

[0070] Furthermore, corresponding to the electrodes of semiconductor elements 3a and 3c, a plurality of terminal members 14 are integrally embedded in the annular wall portion 13. Specifically, the plurality of terminal members 14 are disposed on the wall portion of the annular wall portion 13 on one side in the short side direction (Y direction). Further to the side of the five electrode pads 28 disposed on the side of semiconductor element 3a, five terminal members 14 are arranged in the X direction. Furthermore, further to the side of the five electrode pads 28 disposed on the side of semiconductor element 3c, five terminal members 14 are arranged in the X direction.

[0071] Generally, in the upper and lower arms, the semiconductor element located on the front side (upstream side) of the two parallel-connected semiconductor elements has a larger load relative to the direction of current flow. For example, in the upper arm, the current flows from the P terminal to the M terminal, and in the lower arm, the current flows from the M terminal to the N terminal. In the above reference example, the sensing semiconductor elements 3a and 3c are positioned biased towards the Y direction, so they can only detect the temperature on the Y direction side of the semiconductor module. For example, if the temperature of the non-sensing semiconductor elements 3b and 3d located on the other side of the Y direction becomes higher than the temperature of the aforementioned semiconductor elements 3a and 3c, proper temperature control may not be possible.

[0072] Therefore, the inventors of this case conceived of the present invention by focusing on the positional relationship between the sensing chip with sensing function and the non-sensing chip without sensing function, as well as the flow direction of the refrigerant (cooling water) flowing in the cooler integrated with the module.

[0073] That is, the key point of the present invention is that the sensing chip and non-sensing chip on the lower arm side are arranged in reverse order compared to the conventional arrangement, so that the arrangement direction of the sensing chip and non-sensing chip is consistent with the direction of refrigerant flow.

[0074] Specifically, in this embodiment, such as Figure 3As shown, a plurality of semiconductor elements 3, arranged laterally to form upper and lower arms, are disposed on the upper surface of the laminated substrate 2. The plurality of semiconductor elements are configured such that sensing chips (semiconductor elements 3a, 3c) with temperature sensing function and non-sensing chips (semiconductor elements 3b, 3d) without sensing function are arranged in a direction orthogonal to the arrangement direction (X direction) of the upper and lower arms (Y direction). Furthermore, in the upper and lower arms, the sensing chips and non-sensing chips are arranged in opposite directions. That is, semiconductor elements 3a and 3c are arranged obliquely facing each other when viewed from above, positioned on the diagonal of the laminated substrate 2. Moreover, the flow direction of the refrigerant flowing in the cooler 12 is consistent with the arrangement direction of the sensing chips and non-sensing chips.

[0075] In other words, on the first circuit board 23, a semiconductor element 3a, which has a temperature sensing function and serves as a first sensing chip, and a semiconductor element 3b, which does not have a sensing function and serves as a first non-sensing chip, are arranged along the third flow path F3. On the third circuit board 25, a semiconductor element 3c, which has a sensing function and serves as a second sensing chip, and a semiconductor element 3d, which does not have a sensing function and serves as a second non-sensing chip, are arranged along the third flow path F3. Furthermore, semiconductor element 3a is positioned biased towards the second flow path F2, and semiconductor element 3c is positioned biased towards the first flow path F1. Additionally, the P terminal is positioned biased towards the first flow path F1 in the first circuit board 23, and the M terminal is positioned biased towards the second flow path F2 in the third circuit board 25. The first flow path F1 has an inlet 12d, and the second flow path F2 has an outlet 12.

[0076] Based on these structures, compared to cases where all semiconductor elements within the module are composed of sensing chips, combining sensing chips and non-sensing chips allows for cost-effective manufacturing. Furthermore, by arranging the sensing chips and non-sensing chips differently in the upper and lower arms, the sensing chips are not biased towards the Y-direction side of the semiconductor module 1. Additionally, by aligning the flow direction of the refrigerant in the cooler 12 with the arrangement direction (Y-direction) of the sensing and non-sensing chips, the temperature of the semiconductor elements can be appropriately detected on both the upstream and downstream sides of the cooler 12. Therefore, the temperature of non-sensing chips, which lack sensing capabilities, can be estimated using nearby sensing chips, enabling more efficient temperature control. In this way, even semiconductor elements without sensing capabilities can have their temperature detected using a cost-effective structure.

[0077] In this embodiment, there is no difference from the reference example. Figure 6The elements corresponding to pad 28 shown in the diagram allow semiconductor elements 3a and 3d to be positioned outward in the Y direction by a distance equivalent to the space of pad 28. Specifically, semiconductor element 3a is positioned closer to the second flow path F2 than semiconductor element 3d, and semiconductor element 3c is positioned closer to the first flow path F1 than semiconductor element 3b. This ensures that the distance between semiconductor elements 3a and 3c is maintained in the flow direction of the refrigerant flowing directly below semiconductor element 3 (third flow path F3), thereby facilitating the monitoring of refrigerant temperature changes.

[0078] In this embodiment, the sensing chip has both temperature sensing and current sensing functions. Based on this structure, short circuits can be detected through the current sensing function. Furthermore, while this embodiment describes a structure where the sensing chip has both temperature sensing and current sensing functions, it is not limited to this structure. It is not necessary to have only current sensing functionality.

[0079] In the reference example, the terminal component 14 is electrically connected to the semiconductor element 3 via electrode pads 28 on the insulating plate 20. In contrast, in this embodiment, the terminal component 14 and the semiconductor element 3 are directly connected via wiring component W. According to this structure, the electrode pads 28 can be omitted, thus reducing the area of ​​the laminated substrate 2 and enabling miniaturization and cost reduction of the overall module.

[0080] In this embodiment, a plurality of terminal members 14 are respectively disposed on the upper arm and the lower arm. The plurality of terminal members 14 are configured to face each other obliquely across the laminated substrate 2 when viewed from above. According to this structure, the plurality of terminal members 14 face each other obliquely in the Y direction, thereby enabling the control board (printed circuit board) mounted on the upper surface of the module to be stably held in place by the plurality of facing terminal members 14. An integrated circuit for driving switching elements can be mounted on the control board.

[0081] Although not specifically illustrated, the control board is constructed from a printed circuit board that corresponds to the shape of the semiconductor module 1 and is rectangular when viewed from above in the X direction. For example, through holes are formed on the control board corresponding to the outer terminal portions 16 of each terminal member 14. By inserting the front ends of the outer terminal portions 16 into the through holes, the control board is positioned at a predetermined location on the semiconductor module 1.

[0082] In the reference example, the terminal member 14 is only disposed on one side in the Y direction, so even if the control board is disposed there, the other side in the Y direction is not supported. Therefore, in the reference example, the control board cannot be stably held. Therefore, in the reference example, a separate support portion is required to support the control board on the housing member 11 (annular wall portion 13), thus complicating the structure.

[0083] In this embodiment, a thermistor 4 is disposed on the upper surface of the laminated substrate 2 (insulating plate 20). With this structure, the temperature of the refrigerant flowing below the laminated substrate 2 can be detected by the thermistor 4. Furthermore, it is preferable that the thermistor 4 is disposed downstream in the refrigerant flow direction. Thus, the temperature of the refrigerant heated by the semiconductor element 3 can be detected.

[0084] As explained above, according to the present invention, the sensing chip and non-sensing chip on the lower arm side are arranged in reverse order compared to the conventional arrangement, so that the arrangement direction of the sensing chip and non-sensing chip is consistent with the direction of refrigerant flow. Thus, even semiconductor elements without sensing function can detect chip temperature in an inexpensive structure.

[0085] Furthermore, in the above embodiments, the number and arrangement position of the semiconductor elements 3 disposed on the laminated substrate 2 are not limited to the above structure and can be appropriately changed.

[0086] Furthermore, in the above embodiments, the number and layout of the circuit boards 22 are not limited to the above structure and can be appropriately changed.

[0087] Furthermore, in the above embodiment, the semiconductor element 3 is configured to have a rectangular shape when viewed from above, but it is not limited to this structure. The semiconductor element 3 may also be configured to have a polygonal shape other than a rectangle.

[0088] Furthermore, in the above embodiment, the upper and lower arms of a phase are each constructed by connecting two semiconductor elements in parallel, but the number of semiconductor elements connected in parallel can also be three or more. Additionally, the number of phases in semiconductor module 1 is not limited to single-phase or three-phase, but can also be more than one phase.

[0089] Furthermore, in the above embodiment, the case where the sensing chip is positioned downstream of the non-sensing chip in the current flow direction is described in both the upper and lower arms, but this structure is not limited to this. Alternatively, in both the upper and lower arms, the positional relationship between the sensing chip and the non-sensing chip can be reversed, with the sensing chip positioned upstream of the current flow direction relative to the non-sensing chip. For example, it is possible to perform... Figure 7 The configuration shown. Figure 7 This is a top view showing the semiconductor module involved in the modified example. Figure 7 In, with Figure 3 The differences lie in the reversed configurations of semiconductor elements 3a and 3b, semiconductor elements 3c and 3d, and the multiple terminal components 14. Therefore, only the differences will be described, common structures will be labeled with the same markings, and descriptions will be omitted where appropriate.

[0090] like Figure 7As shown, on the first circuit board 23, a semiconductor element 3a, which has a temperature sensing function and serves as a first sensing chip, and a semiconductor element 3b, which does not have a sensing function and serves as a first non-sensing chip, are arranged along the third flow path F3. On the third circuit board 25, a semiconductor element 3c, which has a sensing function and serves as a second sensing chip, and a semiconductor element 3d, which does not have a sensing function and serves as a second non-sensing chip, are arranged along the third flow path F3. Furthermore, semiconductor element 3a is biased towards the first flow path F1, and semiconductor element 3c is biased towards the second flow path F2. Additionally, the P terminal is biased towards the first flow path F1 in the first circuit board 23, and the M terminal is biased towards the second flow path F2 in the third circuit board 25. Figure 7 In the illustrated embodiment, the first flow path F1 and the second flow path F2 can also be interchanged relative to the third flow path F3. In this case, in the third flow path F3, the refrigerant can flow from the M terminal side to the P terminal side.

[0091] Based on these structures, and Figure 3 Similarly, the structure ensures the distance between semiconductor elements 3a and 3c in the flow direction of the refrigerant flowing directly below semiconductor element 3 (third flow path F3), making it easy to monitor refrigerant temperature changes. In particular, it allows for... Figure 7 The dashed arrows indicate the direction of current flow, and semiconductor elements 3a and 3c are positioned upstream. This allows monitoring of the temperature of semiconductor elements 3a and 3c upstream of the direction of current flow, which is generally considered to carry a larger load. Semiconductor elements 3a and 3c can be positioned near the P and M terminals, and semiconductor elements 3b and 3d can be positioned further away.

[0092] In the above embodiment, the refrigerant flowing within the cooler 12 is directed towards the Y direction. In this case, the refrigerant inlet and outlet can be on either side of the Y direction. That is, either side of the Y direction can be upstream or downstream. For example, the side where the thermistor 4 is configured can be designated as the refrigerant outlet side (downstream side).

[0093] This description illustrates the present embodiment and its variations. The present embodiment and its variations may also be combined, either wholly or partially, to form other embodiments.

[0094] exist Figure 3 and Figure 7In the illustrated configuration, the semiconductor chip 3a (sensing chip) for the upper arm and the semiconductor chip 3c (sensing chip) for the lower arm are respectively positioned apart in the refrigerant flow direction and arranged adjacent to each other diagonally on the laminated substrate 2. This configuration allows for monitoring of the module temperature using sensing chips positioned apart on the upstream and downstream sides of the refrigerant. In both configurations, the terminal members 14 connected to the semiconductor chip 3a for the upper arm and the semiconductor chip 3c for the lower arm can also be positioned apart in the refrigerant flow direction and arranged adjacent to each other diagonally on the laminated substrate 2. This configuration of the terminal members 14 allows for stable holding of the control board. Furthermore, it is possible to... Figure 7 As shown, in the laminated substrate 2, the semiconductor chip 3a and terminal member 14 for the upper arm are disposed on the P-terminal side, and the semiconductor chip 3c and terminal member 14 for the lower arm are disposed on the M-terminal side. With this configuration, the temperature inside the module can be monitored by a sensing chip with a relatively large load, regardless of the direction of refrigerant flow.

[0095] Furthermore, this embodiment is not limited to the above-described embodiments and variations, and various changes, substitutions, and modifications can be made without departing from the spirit of the technical concept. Moreover, if technological advancements or other derived technologies enable the implementation of the technical concept using other methods, those methods can also be used. Therefore, the claims cover all embodiments that can be included within the scope of the technical concept.

[0096] The following is a summary of the feature points in the above embodiments.

[0097] The semiconductor module described in the above embodiments includes: a cooler having a first flow path and a second flow path arranged separately and side by side, and a third flow path connecting the first flow path and the second flow path; and a plurality of circuit boards mounted on the cooler and arranged in a direction intersecting the third flow path, wherein the plurality of circuit boards have a first circuit board connected to a P terminal, a second circuit board connected to an N terminal, and a third circuit board connected to an M terminal, wherein on the first circuit board, a first sensing chip having a temperature sensing function and a first non-sensing chip without the sensing function are arranged along the third flow path, and on the third circuit board, a second sensing chip having the sensing function and a second non-sensing chip without the sensing function are arranged along the third flow path, wherein the first sensing chip is disposed biased toward the second flow path side, and the second sensing chip is disposed biased toward the first flow path side.

[0098] In addition, in the semiconductor module described in the above embodiments, the first sensing chip and the second sensing chip also have a current sensing function for detecting short circuits.

[0099] In addition, the semiconductor module described in the above embodiments also includes a housing component that houses the stacked substrate and has a first terminal component and a second terminal component. The first sensing chip is connected to the first terminal component through a first wiring component, and the second sensing chip is connected to the second terminal component through a second wiring component.

[0100] Furthermore, in the semiconductor module described in the above embodiments, the terminal members are respectively disposed on the first sensing chip side and the second sensing chip side, and the terminal members disposed on the first sensing chip side and the terminal members disposed on the second sensing chip side are configured to face each other obliquely across the stacked substrate when viewed from above.

[0101] Furthermore, in the semiconductor module described in the above embodiments, a thermistor is disposed on the upper surface of the stacked substrate.

[0102] Furthermore, in the semiconductor module described in the above embodiments, the P terminal is disposed on the first circuit board biased toward the first flow path side, and the M terminal is disposed on the third circuit board biased toward the second flow path side.

[0103] Furthermore, in the semiconductor module described in the above embodiments, the P terminal is disposed on the first circuit board biased toward the second flow path side, and the M terminal is disposed on the third circuit board biased toward the first flow path side.

[0104] Furthermore, in the semiconductor module described in the above embodiments, an inlet is provided in the first flow path and an outlet is provided in the second flow path.

[0105] Industrial availability

[0106] As explained above, the present invention has the effect of monitoring internal temperature with an inexpensive structure, which is particularly useful for semiconductor modules.

Claims

1. A semiconductor module, comprising: A cooler having a first refrigerant flow path and a second refrigerant flow path arranged separately and side-by-side, and a third refrigerant flow path connecting the first flow path and the second flow path; and A laminated substrate, mounted on the cooler, has a plurality of circuit boards arranged in a direction intersecting the third flow path. in, The plurality of circuit boards include a first circuit board connected to the P terminal, a second circuit board connected to the N terminal, and a third circuit board connected to the M terminal. On the first circuit board, a first sensing chip with temperature detection function and a first non-sensing chip without the sensing function are arranged along the third flow path. On the third circuit board, a second sensing chip having the sensing function and a second non-sensing chip not having the sensing function are arranged along the third flow path. The first sensing chip is configured biased towards the second flow path side. The second sensing chip is configured biased towards the first flow path side. The positional relationship between the first sensing chip and the first non-sensing chip in the first circuit board is the opposite of the positional relationship between the second sensing chip and the second non-sensing chip in the third circuit board.

2. The semiconductor module according to claim 1, characterized in that, The first sensing chip and the second sensing chip also have a current sensing function for detecting short circuits.

3. The semiconductor module according to claim 1 or 2, characterized in that, It also includes a housing component that houses the laminated substrate and has a first terminal component and a second terminal component. The first sensing chip is connected to the first terminal component through a first wiring component, and the second sensing chip is connected to the second terminal component through a second wiring component.

4. The semiconductor module according to claim 3, characterized in that, The terminal components are respectively disposed on the first sensing chip side and the second sensing chip side. The terminal component disposed on the first sensing chip side and the terminal component disposed on the second sensing chip side are configured to face each other obliquely across the laminated substrate when viewed from above.

5. The semiconductor module according to claim 1 or 2, characterized in that, A thermistor is disposed on the upper surface of the laminated substrate.

6. The semiconductor module according to claim 1 or 2, characterized in that, The P terminal is configured on the first circuit board biased towards the first flow path side. The M terminal is configured on the third circuit board biased toward the second flow path side.

7. The semiconductor module according to claim 1 or 2, characterized in that, The P terminal is configured on the first circuit board biased towards the second flow path side. The M terminal is configured on the third circuit board biased toward the first flow path side.

8. The semiconductor module according to claim 6, characterized in that, An inlet is provided in the first flow path, and an outlet is provided in the second flow path.

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