Action coil selection type etching machine structure

Abstract

The present application provides an etching machine structure with an action coil selection type, which comprises a first plasma reaction cavity with a first reaction chamber; a plurality of first C-shaped coils arranged at the periphery of the first reaction chamber and having a first input end and a first control end, wherein the first control end is grounded; and a first power supply module selectively electrically connected with the first input end through a first switch. Through the implementation of the present application, the cleaning of the deposits on different parts of the reaction chamber wall can be dynamically completed.

Description

Technical Field

[0001] The present invention is a coil selective etching machine structure, in particular, a coil selective etching machine structure applied to the manufacturing process of semiconductors or optoelectronic components. Background Art

[0002] For inductively coupled plasma (ICP), the coil's position and length are crucial. Once the coil's length and position are fixed, they remain fixed, ensuring consistent plasma concentration uniformity, electron temperature distribution, and the location and extent of localized damage within the reactor.

[0003] like Figure 1 As shown, after the etcher has been used for a period of time, polymer deposits (dark area P101 in the figure) after the plasma reaction will form on the wall of the reaction chamber. The polymer deposition will cause distortion of the manufacturing process parameters in the reaction chamber. In addition, as the thickness of the polymer deposition gradually increases, the level of impurity particles in the reaction chamber will also increase, thus causing a serious problem affecting the yield rate.

[0004] In conventional inductively coupled plasma etchers, especially when using dry cleaning, the coil is fixed in the same position. Therefore, the polymer removal area (light-colored area P102 in the figure) is also limited, resulting in the reaction chamber being unable to be effectively cleaned. Summary of the Invention

[0005] The present invention is an etching machine structure with selective action coils, which is mainly intended to solve the problem of how to effectively clean the deposits on the walls of the reaction chamber by selecting the coils.

[0006] The present invention provides an active coil selective etching machine structure, which includes: a first plasma reaction chamber, which has a first reaction chamber; a plurality of first C-shaped coils, which are arranged in an upper and lower manner on the periphery of the first reaction chamber, and each first C-shaped coil has a first input end and a first control end, and the first control ends are electrically connected to each other. And each Self-distinction The first power supply module is selectively electrically connected to the first input terminal via a first switch; wherein a first grounding switch and a capacitor are connected in series between each first control terminal and the ground terminal, and the number of parallel capacitors is controlled by multiple first grounding switches to achieve changes in capacitive reactance and current.

[0007] Preferably, the plurality of first C-shaped coils are arranged parallel to each other.

[0008] Preferably, the plurality of first C-shaped coils are arranged at equal intervals with respect to each other.

[0009] Preferably, the structure further comprises: a second plasma reaction chamber having a second reaction chamber in communication with the first reaction chamber; a plurality of second C-shaped coils arranged on the periphery of the second reaction chamber in an upper and lower arrangement, each of the second C-shaped coils having a second input end and a second control end, and the second control ends being electrically connected to each other and then connected to a ground terminal; and a second power supply module selectively electrically connected to the second input end through a second switch.

[0010] Preferably, the plurality of second C-shaped coils are arranged in parallel with respect to each other.

[0011] Preferably, the plurality of second C-shaped coils are arranged at equal intervals with respect to each other.

[0012] Preferably, a capacitor is connected in series between the second control end and the ground terminal.

[0013] Preferably, a second ground switch and a capacitor are connected in series between each of the second control ends and the ground terminal.

[0014] The present application also provides a coil selection type etching machine structure, comprising: a first plasma reaction chamber having a first reaction chamber; a single first spiral coil arranged around the periphery of the first reaction chamber, the single first spiral coil having a single third input end and a plurality of third control ends; a third power supply module electrically connected to the single third input end; and a plurality of third ground switches electrically connected one-to-one between the plurality of third control ends and a ground terminal.

[0015] Preferably, a capacitor is connected in series between the plurality of third ground switches and the ground terminal.

[0016] Preferably, the structure further comprises: a second plasma reaction chamber having a second reaction chamber in communication with the first reaction chamber; a single second spiral coil arranged around the periphery of the second reaction chamber, the single second spiral coil having a single fourth input end and a plurality of fourth control ends; a fourth power supply module electrically connected to the single fourth input end; and a plurality of fourth ground switches electrically connected one-to-one between the plurality of fourth control ends and the ground terminal.

[0017] Preferably, a capacitor is connected in series between the plurality of fourth ground switches and the ground terminal.

[0018] By implementing the present application, the following advantages can be achieved:

[0019] 1. The coil can be used to selectively clean deposits on the walls of specific areas within the reaction chamber.

[0020] Second, it can reduce the level of impurity particles in the reaction chamber.

[0021] In order to enable anyone skilled in the relevant art to understand the technical content of the present invention and implement it accordingly, and based on the content disclosed in this specification, the scope of the patent application and the drawings, anyone skilled in the relevant art can easily understand the relevant purposes and advantages of the present invention. Therefore, the detailed features and advantages of the present invention will be described in detail in the implementation method. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] [ Figure 1 ] is a real-life picture of the interior of the reaction chamber of a conventional etching machine after it has been used for a period of time.

[0023] [ Figure 2 ] is an embodiment diagram of a single C-type coil and a single plasma reaction chamber.

[0024] [ Figure 3 ]for Figure 2 An embodiment diagram of further connecting capacitors in series.

[0025] [ Figure 4 ]for Figure 2 An embodiment diagram of further connecting a grounding switch and a capacitor in series.

[0026] [ Figure 5 ] is an embodiment diagram of a dual C-type coil and a dual plasma reaction chamber.

[0027] [ Figure 6 ]for Figure 5 An embodiment diagram of further connecting capacitors in series.

[0028] [ Figure 7 ]for Figure 5 An embodiment diagram of further connecting a grounding switch and a capacitor in series.

[0029] [ Figure 8 ] is an embodiment diagram of a single spiral coil and a single plasma reaction chamber.

[0030] [Figure 9(a)] is an overall diagram illustrating an embodiment of the operation of the first, second, and third coils.

[0031] [Figure 9(b), Figure 9(c), Figure 9(d)] are diagrams illustrating the operation of the first, second, and third coils, respectively.

[0032] [ Figure 10 ] is an embodiment diagram of a double helical coil and a double plasma reaction chamber.

[0033] [Figure 11(a)] is a general diagram of an embodiment illustrating the operation of the fourth, fifth, and sixth coils.

[0034] [Figure 11(b), Figure 11(c), and Figure 11(d)] are diagrams illustrating the operation of the fourth, fifth, and sixth coils, respectively.

[0035] [ Figure 12 ] is a simulation diagram of half of the chamber for cleaning the reaction chamber using the first, second, and third coils.

[0036] [ Figure 13 ] Half-chamber simulation for chamber cleaning of C-coil and spiral coil Figure 1 .

[0037] [ Figure 14 ] Half-chamber simulation for chamber cleaning of C-coil and spiral coil Figure 2 .

[0038] [ Figure 15 ] Half-side mold chamber simulation for C-type coil and spiral coil reaction chamber cleaning Figure 3 .

[0039]

Main component symbol description

[0040] P101: Dark Area

[0041] P102: Light-colored area

[0042] 100, 200: Coil-selective etching machine structure

[0043] 110: First plasma reaction chamber

[0044] 111: First reaction chamber

[0045] 131: First switch

[0046] 210: Second plasma reaction chamber

[0047] 211: Second reaction chamber

[0048] 231: Second switch

[0049] C: Capacitor

[0050] P1: First power module

[0051] P2: Second power module

[0052] P3: The third power module

[0053] P4: fourth power supply module

[0054] CT1 a, CT1 b, CT1 c: First control terminal

[0055] CT2a, CT2b, CT2c: Second control terminal

[0056] CT3a, CT3b, CT3c: Third control terminal

[0057] CT4a, CT4b, CT4c: Fourth control terminal

[0058] G1a, G1b, G1c: First grounding switch

[0059] G2a, G2b, G2c: Second grounding switch

[0060] G3a, G3b, G3c: Third grounding switch

[0061] G4a, G4b, G4c: fourth grounding switch

[0062] GL: Ground terminal

[0063] IP1 a, IP1 b, IP1 c: First input terminal

[0064] IP2a, IP2b, IP2c: Second input terminal

[0065] IP3: Third input terminal

[0066] IP4: Fourth input terminal

[0067] S1: First spiral coil

[0068] S11: First coil

[0069] S12: Second coil

[0070] S13: The third coil

[0071] S2: Second spiral coil

[0072] S24: The fourth coil

[0073] S25: The fifth coil

[0074] S26: Sixth coil

[0075] X1 a, X1 b, X1 c: First C-type coil

[0076] X2a, X2b, X2c: Second C-type coil DETAILED DESCRIPTION

[0077] like Figure 2As shown, the present embodiment provides a coil selection type etching machine structure 100, which comprises a first plasma reaction cavity 110, a plurality of first C-type coils X1a, X1b, X1c, and a first power supply module P1.

[0078] The first plasma reaction cavity 110 is, for example, a plasma reaction cavity that can complete an etching manufacturing process, and the first plasma reaction cavity 110 has a first reaction chamber 111.

[0079] The first C-type coils X1a, X1b, X1c are arranged above and below the periphery of the first reaction chamber 111, and the first C-type coils X1a, X1b, X1c mainly provide energy for generating plasma in the first reaction chamber 111. Each of the first C-type coils X1a, X1b, X1c has a first input end IP1a, IP1b, IP1c and a first control end CT1a, CT1b, CT1c.

[0080] The first control ends CT1a, CT1b, CT1c are electrically connected to each other and connected to a ground terminal GL to form a complete loop. The arrangement of the first C-type coils X1a, X1b, X1c can be parallel to each other and / or equidistant from each other.

[0081] As shown, Figure 3 and Figure 4 In order to ensure the loop of the first C-type coils X1a, X1b, X1c and effectively block direct current or noise, a capacitor C can be connected in series between the first control ends CT1a, CT1b, CT1c and the ground terminal GL. In addition, in order to dynamically adjust the capacitive reactance, a first ground switch G1a, G1b, G1c and a capacitor C can also be connected in series between each of the first control ends CT1a, CT1b, CT1c and the ground terminal GL. The number of parallel capacitors C is controlled by the first ground switch G1a, G1b, G1c to change the capacitive reactance and the amount of current.

[0082] The first power supply module P1 mainly provides power for the first C-type coils X1a, X1b, X1c. The first power supply module P1 is selectively electrically connected to one of the first input ends IP1a, IP1b, IP1c by a first switch 131, so that a specific first C-type coil X1a, X1b, X1c can be selectively made to generate magnetic field energy, thereby generating plasma in the corresponding part of the first reaction chamber 111, and completing the wall cleaning operation on the inner wall of the corresponding first reaction chamber 111.

[0083] As Figure 5 As shown, in some manufacturing processes, an etching machine structure 100 with a second plasma reaction chamber is used, so the etching machine structure will further have: a second plasma reaction chamber 210; a plurality of second C-shaped coils X2a, X2b, X2c; and a second power module P2.

[0084] The second plasma reaction chamber 210 is, for example, a plasma reaction chamber capable of completing an etching process. The second plasma reaction chamber 210 includes a second reaction chamber 211 communicating with the first reaction chamber 111 .

[0085] The second C-shaped coils X2a, X2b, and X2c are arranged in an upper and lower manner around the periphery of the second reaction chamber 211. The first C-shaped coils X1a, X1b, and X1c mainly provide energy for generating plasma in the second reaction chamber 211. Each of the second C-shaped coils X2a, X2b, and X2c has a second input terminal IP2a, IP2b, and IP2c and a second control terminal CT2a, CT2b, and CT2c.

[0086] The second control terminals CT2a, CT2b, and CT2c are electrically connected to each other and then to the ground terminal GL to form a complete circuit. The second C-shaped coils X2a, X2b, and X2c can be arranged parallel to each other and / or evenly spaced.

[0087] like Figure 6 and Figure 7 As shown, to ensure that the loop of the second C-shaped coils X2a, X2b, and X2c can effectively block DC and noise, a capacitor C may be connected in series between the second control terminals CT2a, CT2b, and CT2c and the ground terminal GL. Furthermore, to dynamically adjust the capacitive reactance, a second grounding switch G2a, G2b, and G2c and a capacitor C may be connected in series between each of the second control terminals CT2a, CT2b, and CT2c and the ground terminal GL. The second grounding switches G2a, G2b, and G2c control the number of parallel capacitors C to achieve changes in the capacitive reactance and current.

[0088] The second power module P2 primarily provides power to the second C-shaped coils X2a, X2b, and X2c. The second power module P2 is selectively electrically connected to the second input terminals IP2a, IP2b, and IP2c via the second switch 231. This selectively enables a specific second C-shaped coil X2a, X2b, and X2c to generate magnetic field energy, thereby generating plasma at a corresponding location within the second reaction chamber 211, thereby completing the wall cleaning operation on the corresponding inner wall of the second reaction chamber 211.

[0089] like Figure 8 As shown, the present invention further provides an embodiment using a spiral coil, which is also an active coil selective etching machine structure 200, which includes: a first plasma reaction chamber 110; a first spiral coil S1; a third power module P3; and a plurality of third grounding switches G3a, G3b, and G3c.

[0090] The first plasma reaction chamber 110 is, for example, a plasma reaction chamber capable of completing an etching process. The first plasma reaction chamber 110 has a first reaction chamber 111 .

[0091] The first spiral coil S1 is disposed around the periphery of the first reaction chamber 111 and mainly provides energy for the first reaction chamber 111 to generate plasma. The first spiral coil S1 has a third input terminal IP3 and a plurality of third control terminals CT3a, CT3b, and CT3c.

[0092] The third power module P3 is electrically connected to the third input terminal IP3 . The third power module P3 mainly provides the power required by the first spiral coil S1 to generate plasma.

[0093] A plurality of third grounding switches G3a, G3b, and G3c are electrically connected one-to-one between the third control terminals CT3a, CT3b, and CT3c and the ground terminal GL. For example, three third grounding switches G3a, G3b, and G3c are electrically connected one-to-one to the three third control terminals CT3a, CT3b, and CT3c of the first spiral coil S1, respectively. This divides the first spiral coil S1 into a first coil S11, a second coil S12, and a third coil S13. The three third grounding switches G3a, G3b, and G3c can be turned on individually or together.

[0094] As shown in FIG9(a), FIG9(b) shows that when the current is to flow only through the first coil S11, the three third grounding switches G3a, G3b, and G3c can be turned on. Therefore, the current input from the third input terminal IP3 flows only through the shortest path, the first coil S11, and then enters the ground terminal GL through the third grounding switch G3a.

[0095] 9(a) and 9(c) illustrate the case where current is to flow through the first coil S11 and the second coil S12. In this case, the two third grounding switches G3b and G3c are turned on, while the other third grounding switch G3a is turned off. Therefore, the current inputted through the third input terminal IP3 passes through the first coil S11 and the second coil S12, and then enters the ground terminal GL through the third grounding switch G3b, creating a spiral coil with two turns.

[0096] 9(a) and 9(d) illustrate the situation where current is to flow through the first coil S11, the second coil S12, and the third coil S13. At this time, one third grounding switch G3c can be turned on, while the other two third grounding switches G3a and G3b are turned off. Therefore, current inputted from the third input terminal IP3 passes through the first coil S11, then the second coil S12, and the third coil S13, and finally enters the ground terminal GL through the third grounding switch G3c. This is equivalent to a spiral coil with three turns.

[0097] In order to ensure that the first spiral coil S1 is not interfered by DC or noise, a capacitor C may be further connected in series between the three third grounding switches G3a, G3b, and G3c and the ground terminal GL.

[0098] like Figure 10 As shown, the etching machine structure 200 further comprises: a second plasma reaction chamber 210; a second spiral coil S2; a fourth power supply module P4; and a plurality of fourth grounding switches G4a, G4b, and G4c.

[0099] The second plasma reaction chamber 210 is, for example, a plasma reaction chamber capable of completing an etching process. The second plasma reaction chamber 210 includes a second reaction chamber 211 communicating with the first reaction chamber 111 .

[0100] The second spiral coil S2 is disposed around the periphery of the second reaction chamber 211 and mainly provides energy for the second reaction chamber 211 to generate plasma. The second spiral coil S2 has a fourth input end IP4 and a plurality of fourth control ends CT4a, CT4b, and CT4c.

[0101] The fourth power module P4 is electrically connected to the fourth input terminal IP4. The fourth power module P4 mainly provides the second spiral coil S2 with power required to generate plasma.

[0102] A plurality of fourth grounding switches G4a, G4b, and G4c are electrically connected one-to-one between the fourth control terminals CT4a, CT4b, and CT4c and the ground terminal GL. For example, three fourth grounding switches G4a, G4b, and G4c are electrically connected one-to-one to the three fourth control terminals CT4a, CT4b, and CT4c of the second spiral coil S2, respectively. This divides the second spiral coil S2 into a fourth coil S24, a fifth coil S25, and a sixth coil S26. The three fourth grounding switches G4a, G4b, and G4c can be turned on individually or together.

[0103] As shown in FIG11( a ), FIG11( b ) shows a case where the current is directed only through the fourth coil S24 . In this case, the three fourth grounding switches G4 a , G4 b , and G4 c can all be turned on. Therefore, the current inputted from the fourth input terminal IP4 flows only through the shortest path, the fourth coil S24 , and then enters the ground terminal GL through the fourth grounding switch G4 a .

[0104] 11(a) and 11(c) illustrate the case where current is to flow through the fourth coil S24 and the fifth coil S25. In this case, the two fourth grounding switches G4b and G4c are turned on, while the other fourth grounding switch G4a is turned off. Therefore, the current inputted through the fourth input terminal IP4 passes through the fourth coil S24 and the fifth coil S25, and then enters the ground terminal GL through the fourth grounding switch G4b, creating a spiral coil with two turns.

[0105] 11(a) and 11(d) illustrate the situation where current is to flow through the fourth coil S24, the fifth coil S25, and the sixth coil S26. At this time, one fourth grounding switch G4c can be turned on, while the other two fourth grounding switches G4a and G4b are turned off. Therefore, current inputted from the fourth input terminal IP4 passes through the fourth coil S24, then through the fifth coil S25 and the sixth coil S26, and finally enters the ground terminal GL through the fourth grounding switch G4c. This is equivalent to a spiral coil with three turns.

[0106] Similarly, in order to ensure that the second spiral coil S2 is not interfered by DC or noise, a capacitor C may be further connected in series between the fourth grounding switches G4a, G4b, G4c and the ground terminal GL.

[0107] like Figure 12 As shown, taking the first reaction chamber 111 as an example, when the third power module P3 simultaneously provides a current ratio of 1:1:1, that is, for example, 10A:10A:10A, to the first coil S11, the second coil S12, and the third coil S13, a plasma reaction will occur at the corresponding positions within the first reaction chamber 111. Therefore, the positions within the first reaction chamber 111 corresponding to the first coil S11, the second coil S12, and the third coil S13 can be cleaned of dirt.

[0108] like Figure 13As shown, taking the first reaction chamber 111 as an example, when the first power module P1 provides power to the first C-type coil X1a, or the third power module P3 provides power to the first coil S11, a plasma reaction will be generated at the position corresponding to the first C-type coil X1a or the first coil S11 in the first reaction chamber 111, and the scale on the inner wall of the first reaction chamber 111 will be cleaned.

[0109] like Figure 14 As shown, taking the first reaction chamber 111 as an example, when the first power module P1 provides power to the first C-type coil X1b, or the third power module P3 provides power to the second coil S12, a plasma reaction will be generated at the corresponding position of the first C-type coil X1b or the second coil S12 in the first reaction chamber 111, and the scale on the inner wall of the first reaction chamber 111 will be cleaned.

[0110] like Figure 15 As shown, taking the first reaction chamber 111 as an example, when the first power module P1 provides power to the first C-type coil X1c, or the third power module P3 provides power to the third coil S13, a plasma reaction will be generated at the position corresponding to the first C-type coil X1c or the third coil S13 in the first reaction chamber 111, and the scale on the inner wall of the first reaction chamber 111 will be cleaned.

[0111] When cleaning the inner wall of the second reaction chamber 211, the above-mentioned Figures 12 to 15 The same cleaning effect can be achieved by following the operating instructions.

[0112] However, the above embodiments are used to illustrate the features of the present invention. Their purpose is to enable those skilled in the art to understand the contents of the present invention and implement them accordingly, rather than to limit the patent scope of this creation. Therefore, any other equivalent modifications or amendments that do not depart from the spirit disclosed by the present invention should still be included in the scope of the patent application.

Claims

1. A coil selective etching machine structure, characterized in that: It includes: A first plasma reaction chamber having a first reaction chamber; a plurality of first C-shaped coils arranged in an upper and lower arrangement around the periphery of the first reaction chamber, each of the first C-shaped coils having a first input end and a first control end, wherein the first control ends are electrically connected to each other and are each grounded to a ground end; and a first power module selectively electrically connected to the first input end via a first switch; A first grounding switch and a capacitor are connected in series between each of the first control ends and the ground end. The first grounding switches are used to control the number of capacitors connected in parallel, thereby achieving changes in capacitive reactance and current.

2. The etching machine structure according to claim 1, characterized in that: The plurality of first C-shaped coils are arranged parallel to each other.

3. The etching machine structure according to claim 1, characterized in that: The plurality of first C-shaped coils are arranged at equal intervals from each other.

4. The etching machine structure according to claim 1, characterized in that It further has: A second plasma reaction chamber having a second reaction chamber communicated with the first reaction chamber; a plurality of second C-shaped coils arranged in an upper and lower arrangement around the periphery of the second reaction chamber, each of the second C-shaped coils having a second input end and a second control end, wherein the second control ends are electrically connected to each other and then to a ground end; and The second power module is selectively electrically connected to the second input end via a second switch.

5. The etching machine structure according to claim 4, characterized in that: The plurality of second C-shaped coils are arranged parallel to each other.

6. The etching machine structure according to claim 4, characterized in that: The plurality of second C-shaped coils are arranged at equal intervals from each other.

7. The etching machine structure according to claim 4, characterized in that: A capacitor is connected in series between the second control end and the ground end.

8. The etching machine structure according to claim 4, characterized in that: A second grounding switch and a capacitor are connected in series between each of the second control terminals and the ground terminal.

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