Electron beam equipment for optical device manufacturing

Abstract

Aspects of the present disclosure relate to apparatus for making a waveguide. In one example, an angled ion source is used to project ions toward a substrate to form a waveguide comprising an angled grating. In another example, an angled electron beam source is used to project electrons toward a substrate to form a waveguide comprising an angled grating. Additional aspects of the present disclosure provide methods for forming an angled grating on a waveguide using an angled ion beam source and an angled electron beam source.

Description

[0001] background

[0002] field

[0003] Embodiments of the present disclosure generally relate to apparatus and methods for optical device fabrication. More particularly, embodiments of the present disclosure relate to apparatus and methods for ion beam and electron beam waveguide fabrication.

[0004] Description of related technologies

[0005] Virtual reality is generally considered to be a computer-generated simulated environment in which the user has an apparent physical presence. The virtual reality experience can be generated in 3 dimensions (3D) and viewed with a head-mounted display (HMD) (e.g., glasses or other wearable display devices with near-eye display panels as lenses to display a virtual reality environment that replaces the actual environment).

[0006] However, augmented reality allows an experience in which the user is still able to see through the display lenses of glasses or other HMD devices to observe the surrounding environment, and can also see images of virtual objects generated for display and appearing as part of the environment. Augmented reality can include any type of input (such as audio and tactile input), as well as virtual images, graphics, and videos that enhance or augment the environment experienced by the user. As an emerging technology, augmented reality has many challenges and design limitations.

[0007] One such challenge is to display a virtual image overlaid on the surrounding environment. Waveguides are used to assist in overlaying the image. The generated light propagates through the waveguide until the light exits the waveguide and is overlaid on the surrounding environment. Manufacturing waveguides can be challenging because waveguides tend to have non-uniform properties. Therefore, what is needed in the art is an improved method and system for waveguide manufacturing.

[0008] Overview

[0009] In one embodiment, an electron beam etching apparatus is provided. The apparatus includes: a chamber body defining a process volume; a pedestal disposed in the process volume; a first electrode coupled to the pedestal; a cover coupled to the chamber body; and a second electrode coupled to the cover. The second electrode includes a segmented surface having a plurality of angled surfaces, the plurality of angled surfaces being disposed in a non-orthogonal orientation relative to a reference plane defined by the first electrode.

[0010] In another embodiment, an electron beam etching apparatus is provided. The apparatus includes: a chamber body defining a process volume; a pedestal disposed in the process volume; a first electrode coupled to the pedestal; a cover coupled to the chamber body; and a second electrode coupled to the cover. The second electrode is made of a material with a high secondary electron emission coefficient, and the second electrode includes a segmented surface having a plurality of angled surfaces, the plurality of angled surfaces being arranged in a non-orthogonal orientation relative to a reference plane defined by the first electrode.

[0011] In yet another embodiment, an electron beam etching apparatus is provided. The apparatus includes: a chamber body defining a process volume; a pedestal disposed within the process volume; an actuator coupled to the pedestal, the actuator being operable to raise and lower the pedestal within the process volume; an electrostatically attached electrode disposed in the pedestal; and a lid coupled to the chamber body. An electrode is coupled to the lid, and the electrode includes a segmented surface having a plurality of angled surfaces, the plurality of angled surfaces being disposed in a non-orthogonal orientation relative to a reference plane defined by the electrostatically attached electrode. An RF power supply is coupled to the electrode, and the RF power supply is operable to generate a plasma in the process volume.

[0012] BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to be able to understand in detail the manner in which the above-mentioned features of the present disclosure are achieved, a more detailed description of the present disclosure briefly summarized above can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and are therefore not to be considered as limiting the scope of the present disclosure, and other equally effective embodiments may be allowed.

[0014] Figure 1 A plan view of a waveguide combiner according to one embodiment of the present disclosure is shown.

[0015] Figure 2 A schematic side view of an angled etching system according to one embodiment of the present disclosure is shown.

[0016] Figure 3 A side cross-sectional view of an electrode assembly according to one embodiment of the present disclosure is shown.

[0017] Figure 4A A schematic side view of a segmented ion source according to one embodiment of the present disclosure is shown.

[0018] Figure 4B A schematic side view of a segmented ion source according to one embodiment of the present disclosure is shown.

[0019] Figure 4C A schematic side view of a segmented ion source according to one embodiment of the present disclosure is shown.

[0020] Figure 5A A schematic plan view of a filter plate according to one embodiment of the present disclosure is shown.

[0021] Figure 5B An embodiment of the present disclosure is shown in FIG. Figure 4C Schematic side view of a segmented ion source with a filter plate coupled to the segmented ion source.

[0022] Figure 6 A schematic cross-sectional view of an electron beam etching system according to one embodiment of the present disclosure is shown.

[0023] Fig. 7A An angled etching process performed on a waveguide at a first location is illustrated in accordance with one embodiment of the present disclosure.

[0024] Figure 7B FIG. 1 illustrates a schematic diagram of an embodiment of the present disclosure during an angled etching process at a second location. Fig. 7A of waveguide.

[0025] Figure 8 Operations of a method for etching a waveguide with an angled ion beam in accordance with one embodiment of the present disclosure are illustrated.

[0026] Fig. 9 Operations of a method for etching a waveguide with an angled electron beam in accordance with one embodiment of the present disclosure are illustrated.

[0027] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0028] Specific instructions

[0029] Aspects of the present disclosure relate to apparatus for making nanostructured optical devices such as waveguides, waveguide combiners, angled gratings, and metalenses for use in various devices such as augmented reality / virtual reality (AR / VR) head-mounted devices and smart windows. In one example, an angled ion source is used to project ions toward a substrate to form a waveguide comprising an angled grating. In another example, an angled electron beam source is used to project electrons toward a substrate to form a waveguide comprising an angled grating. Additional aspects of the present disclosure provide methods for forming angled gratings on a waveguide using an angled ion beam source and an angled electron beam source.

[0030] Figure 1 A plan view of a waveguide combiner 100 according to one embodiment of the present disclosure is illustrated. It is to be understood that the waveguide combiner 100 described below is an exemplary waveguide combiner and that other waveguide combiners having different designs may benefit from the embodiments described herein. The waveguide combiner 100 includes an input coupling region 102 defined by a plurality of gratings 108, an intermediate region 104 defined by a plurality of gratings 110, and an output coupling region 106 defined by a plurality of gratings 112. The input coupling region 102 receives an incident light beam (virtual image) having a certain intensity from a microdisplay. Each grating in the plurality of gratings 108 (e.g., a fin structure or the like) separates the incident beam into a plurality of modes, each beam having one mode. The zero-order mode (T0) beam is reflected back or transmitted through the waveguide combiner 100, the positive first-order mode (T1) beam is coupled to the middle region 104 through the waveguide combiner 100, and the negative first-order mode (T-1) beam propagates in the waveguide combiner 100 in the opposite direction to the T1 beam. Ideally, the incident beam is separated into the T1 beam having all the intensity of the incident beam to guide the virtual image to the middle region 104. One method of separating the incident beam into the T1 beam having all the intensity of the incident beam is to suppress the T-1 beam and the T0 beam using a fin having a tilt angle (the fin includes a grating 108). The T1 beam undergoes total internal reflection (TIR) ​​through the waveguide combiner 100 until the T1 beam contacts the plurality of gratings 110 in the middle region 104. A portion of the input coupling region 102 may have a grating 108 with a tilt angle that is different from the tilt angle of the grating 108 from an adjacent portion of the input coupling region 102.

[0031] The T1 beam contacts the fins of the plurality of gratings 110. The T1 beam is separated into a T0 beam that is refracted back or lost in the waveguide combiner 100, a T1 beam that undergoes TIR in the middle region 104 until the T1 beam contacts another fin of the plurality of gratings 110, and a T-1 beam that is coupled to the output coupling region 106 via the waveguide combiner 100. The T1 beam that undergoes TIR in the middle region 104 continues to contact the gratings in the plurality of gratings 110 until any of the following conditions is met: the intensity of the T1 beam coupled to the middle region 104 via the waveguide combiner 100 is exhausted, or the remaining T1 beam propagating through the middle region 104 reaches the end of the middle region 104.

[0032] The plurality of gratings 110 are adjusted to control the T1 beam coupled to the middle region 104 via the waveguide combiner 100 to control the intensity of the T-1 beam coupled to the output coupling region 106 to modulate the field of view of the virtual image generated from the microdisplay from the user's perspective and increase the viewing angle at which the user can observe the virtual image. One method of controlling the T1 beam coupled to the middle region 104 via the waveguide combiner 100 is to optimize the tilt angle of each fin of the plurality of gratings 110 to control the intensity of the T-1 beam coupled to the output coupling region 106. A portion of the middle region 104 may have gratings 110 with a tilt angle that is different from the tilt angle of the gratings 110 from an adjacent portion of the middle region 104. Also, the gratings 110 may have fins with tilt angles that are different from the tilt angles of the fins of the gratings 108.

[0033] The T-1 beam coupled to the output coupling region 106 via the waveguide combiner 100 undergoes TIR in the waveguide combiner 100 until the T-1 beam contacts a grating in the plurality of gratings 112, where the T-1 beam is separated into a T0 beam that is refracted back or lost in the waveguide combiner 100. The T1 beam undergoes TIR in the output coupling region 106 until the T1 beam contacts another fin of the plurality of gratings 112, and the T-1 beam is coupled out of the waveguide combiner 100. The T1 beam undergoing TIR in the output coupling region 106 continues to contact the fins of the plurality of gratings 112 until any of the following conditions is met: the intensity of the T-1 beam coupled to the output coupling region 106 via the waveguide combiner 100 is exhausted, or the remaining T1 beam propagating through the output coupling region 106 has reached the end of the output coupling region 106. The plurality of gratings 112 are adjusted to control the T-1 beam coupled to the output coupling region 106 via the waveguide combiner 100 to control the intensity of the T-1 beam coupled out of the waveguide combiner 100 to further modulate the field of view of the virtual image generated by the microdisplay from the user's perspective and to further increase the viewing angle at which the user can observe the virtual image.

[0034] One method of controlling the T-1 beam coupled to the output coupling region 106 via the waveguide combiner 100 is to optimize the tilt angle of each fin of the plurality of gratings 112 to further modulate the field of view and increase the viewing angle. A portion of the middle region 104 may have a grating 110 with a fin tilt angle that is different from the fin tilt angle of the grating 110 from an adjacent portion of the middle region 104. Also, the grating 112 may have a fin tilt angle that is different from the fin tilt angles of the gratings 108 and 110.

[0035] Figure 2A schematic side view of an angled etching system 200 in accordance with one embodiment of the present disclosure is illustrated. It is to be understood that the angled etching system 200 described below is an exemplary angled etching system and that other angled etching systems may be used with or modified to fabricate waveguide combiners in accordance with embodiments of the present disclosure.

[0036] To form the fins with tilt angles, a grating material 212 disposed on a substrate 210 is etched by an angled etching system 200. In one embodiment, the grating material 212 is disposed on an etch stop layer 211, which is disposed on the substrate 210, and a patterned hard mask 213 is disposed above the grating material 212. The material of the grating material 212 is selected based on the tilt angle θ' of each fin and the refractive index of the substrate 210 to control the in-coupling and out-coupling of light and promote light propagation through the waveguide combiner. In another embodiment, the grating material 212 includes a material containing silicon oxycarbide (SiOC), titanium dioxide (TiO 2 ), silicon dioxide (SiO 2 )、vanadium(IV) oxide (VOx), aluminum oxide (Al 2 O 3 ), indium tin oxide (ITO), zinc oxide (ZnO), tantalum pentoxide (Ta 2 O 5 ), silicon nitride (Si 3 N 4 ), titanium nitride (TiN), and / or zirconium dioxide (ZrO 2 The grating material 212 has a refractive index between about 1.5 and about 2.65.

[0037] In another embodiment that may be combined with other embodiments described herein, the patterned hard mask 213 is an opaque hard mask that is removed after the waveguide combiner is formed. For example, the opaque hard mask includes a reflective material such as chromium, silver, titanium nitride, tantalum nitride, silicon nitride, or silicon oxide material. In another embodiment, the patterned hard mask 213 is a transparent hard mask. In one embodiment that may be combined with other embodiments described herein, the etch stop layer 211 is an opaque etch stop layer that is removed after the waveguide combiner is formed. In another embodiment that may be combined with other embodiments described herein, the etch stop layer 211 is a transparent etch stop layer.

[0038] The angled etching system 200 includes an ion beam chamber 202 housing an ion beam source 204. The ion beam source 204 is configured to generate an ion beam 216, such as a spot beam, a ribbon beam, or a full substrate size beam. The ion beam chamber 202 is configured to direct the ion beam 216 at an angle α relative to a reference plane 218, which is oriented orthogonally to the substrate 210. For example, the system 200 also includes a segmented source 230. The segmented source 230 modulates the angle of the ion beam 216 to achieve the angle α used to create the fins in the grating material 212. Figure 3 and FIG. 4A to FIG. 4C The segmented source 230 is described in detail (the segmented source 230 may include a plurality of segments, each segment including one or more electrodes).

[0039] The substrate 210 is held on a table 206 coupled to a first actuator 208. The first actuator 208 (the first actuator 208 can be a linear actuator, a rotary actuator, a stepper motor, or the like) is configured to move the table 206 in a scanning motion along the y-direction and / or the z-direction. In one embodiment, the first actuator 208 is further configured to tilt the table 206 so that the substrate 210 is positioned at a tilt angle β relative to the x-axis of the ion beam chamber 202. The angle α and the tilt angle β cause an ion beam angle θ relative to a reference plane 218. In order to form a fin having a tilt angle θ' relative to the reference plane 218, the ion beam source 204 generates an ion beam 216, and the ion beam chamber 202 directs the ion beam 216 toward the substrate 210 via a segmented source 230 at an angle α. The first actuator 208 positions the stage 206 so that the ion beam 216 contacts the grating material 212 at the ion beam angle θ and etches a fin having a tilt angle θ′ on a desired portion of the grating material 212. The second actuator 220 may also be coupled to the stage 206 to rotate the substrate 210 about the x-axis of the stage 206 to control the tilt angle θ′ of the grating. Advantageously, the substrate 210 may be rotated to expose various different areas of the substrate 210 to the ion beam 216 without otherwise changing the arrangement of the ion beam chamber 202.

[0040] Figure 3A side cross-sectional view of an electrode assembly 300 according to an embodiment of the present disclosure is shown. In one embodiment, the electrode assembly 300 can be adapted as a graded lens configuration. In another embodiment that can be combined with other embodiments, the electrode assembly 300 includes one or more components of electrodes. For example, the electrode assembly 300 can include a set of entrance electrodes 302, one or more groups of suppression electrodes 304 (or focusing electrodes), and a set of exit electrodes 306. The exit electrode 306 can be referred to as a ground electrode. Each set of electrodes 302, 304, 306 can be positioned to have a space or gap to allow the passage of an ion beam 216 (e.g., a ribbon beam, a spot beam, or a full substrate size beam) to pass through the space or the gap.

[0041] In some embodiments, the inlet electrode 302, the suppression electrode 304, and the outlet electrode 306 are provided in the housing 308. The pump 310 can be directly or indirectly connected to the housing 308. The pump 310 can be a vacuum pump for providing a high vacuum environment or other controlled environments of different pressures. For example, the pump 310 can generate a pressure environment below atmospheric pressure in the housing 308, or the pump 310 can maintain a pressure environment of approximately atmospheric pressure in the housing 308. In other embodiments that can be combined with other embodiments, the housing 308 can include one or more dielectric members 314. The dielectric member 314 is used to electrically insulate the housing 308 from other components of the electrode assembly 300.

[0042] The set of entrance electrodes 302 and exit electrodes 306 can include two conductive sheets electrically coupled to each other. In other embodiments, the assembly of the entrance electrode 302 is a single-piece structure having an aperture through which the ion beam 216 passes. In some embodiments, the upper and lower portions of the suppression electrode 304 can have different electrical potentials (e.g., having different electrical potentials in separate / discreet conductive portions) to deflect the ion beam 216 passing through these suppression electrodes. Although the electrode assembly 300 is depicted as a seven (7) element lens configuration (e.g., having five (5) sets of suppression electrodes 304), it should be understood that any number of elements (or electrodes) may be utilized. For example, in some embodiments, the electrode assembly 300 may utilize a series of three (3) to ten (10) electrode sets.

[0043] Electrostatic focusing of the ion beam 216 can be achieved by controlling the potential gradient along the path of the ion beam 216 using several thin electrodes (e.g., suppression electrode 304). As a result, the use of the input ion beam 216 can be used in an energy range that can allow for higher quality beams (e.g., 100 volts to 3,000 volts), even for very low energy output beams. In one embodiment, the ion beam 216 can be decelerated from 6 keV to 0.2 keV and deflected by about 15 degrees to about 30 degrees (or more) by the electrodes of the electrode assembly 300 as the ion beam 216 passes through the electrodes of the electrode assembly 300. In one example, the energy ratio can be 30 / 1.

[0044] It should be understood that separate and independently controlled deceleration, deflection, and / or focusing may be accomplished by one or a combination of the following steps: relative to the central ray trajectory of the ion beam 216 (e.g., Figure 2 The reference plane 218 of the ion beam 216 is moved by moving electrodes (e.g., the entrance electrode 302, the suppression electrode 304, and the exit electrode 306), and changing the deflection voltage electrodes (e.g., the entrance electrode 302, the suppression electrode 304, and the exit electrode 306) along the central ray trajectory of the ion beam 216 to reflect the beam energy at each point along the central ray trajectory at a deflection angle α. The symmetry of the electrodes relative to the central ray trajectory of the ion beam 216 is that the ends of the upper and lower electrodes closest to the ion beam 216 can be maintained at equal (or nearly equal) vertical distances from the central ray trajectory of the ion beam 216. For example, the voltage difference on the electrodes above and below the ion beam 216 can be configured so that the deflection component of the electric field can be a fixed ratio / multiple of the beam energy at that point (the deflection component can vary along the electrodes or lenses).

[0045] Figure 4A A schematic side view of a segmented ion source 230 is shown in accordance with one embodiment of the present disclosure. The segmented ion source 230 is coupled to or otherwise integrated with the ion beam chamber 202 and segments 412 of the segmented ion source 230 are aligned or otherwise positioned to receive the ion beam 216 from the beam source 204.

[0046] The segmented ion source 230 includes a housing 402 having a first wall 404, a second wall 406, a third wall 414, and a fourth wall 416. In one embodiment, the first wall 404 and the second wall 406 are oriented substantially parallel to each other. The third wall 414 and the fourth wall 416 are also substantially parallel to each other and extend between the first wall 404 and the second wall 406. Although the above orientation of the walls 404, 406, 414, 416 can be beneficially employed, it is contemplated that other wall configurations can also be utilized.

[0047] In one embodiment, the first wall 404 is coupled to the ion beam chamber 202, and the segment 412 is adjacent to and positioned opposite the worktable 206. The segment 412 is formed in the second wall 406 and includes a plurality of surfaces 408, 410. The first surface 408 is angled relative to a reference plane defined by the second wall 406. The angle of the first surface 408 can be selected to be between about 1 degree and about 60 degrees relative to the reference plane defined by the second wall 406. Thus, the first surface 408 extends from the second wall 406 into the housing 402 at an angle and toward the first wall 404.

[0048] The second surface 410 extends between the first surface 408 and the second wall 406. The second surface 410 is oriented generally orthogonal to a reference plane defined by the second wall 406. However, it is contemplated that the second surface 410 may be oriented at a non-orthogonal angle relative to the reference plane defined by the second wall 406. Although three segments 412 are shown, it is contemplated that a larger or smaller number of segments 412 may be utilized to modulate the ion beam 216, depending on the area of ​​the substrate 210 desired to be etched. Furthermore, it is contemplated that the sizes of the surfaces 408, 410 relative to each other may be varied to modulate the angular characteristics of the ion beam 216.

[0049] In one embodiment, the electrode assembly 300 is positioned adjacent to the first surface 408 of the second wall 406 within the housing 402. For example, the electrode assembly 300 can be coupled to the first surface 408 within the housing 402. Figure 3 , the housing 308 of the electrode assembly 300 may include a shape selected to match or interface with the angle of the first surface 408. The first surface 408 may also include one or more openings 418 in the first surface 408, the one or more openings 418 adjacent to where the electrode assembly 300 is positioned to allow the ion beam 216 to pass through the first surface 408. Similarly, the first wall 404 may also have one or more openings 420 formed in the first wall 404, and the openings 420 formed in the first wall 404 may be aligned with one or both of the openings 418 formed in the first surface 408 or the electrode assembly 300. Thus, the ion beam 216 may propagate through the first wall 404 in a direction that is substantially orthogonal to a reference plane defined by the first wall 404, but exit the housing 402 through the first surface 408 of the second wall 406 at a predetermined angle.

[0050] Figure 4BA schematic side view of a segmented ion source 230 is shown in accordance with one embodiment of the present disclosure. The segmented ion source 230 is coupled to or otherwise integrated with the ion beam chamber 202 and segments 412 of the segmented ion source 230 are aligned or otherwise positioned to receive the ion beam 216 from the beam source 204.

[0051] The segmented ion source 230 includes a housing 422 having a first wall 424, a second wall 426, a third wall 434, and a fourth wall 436. In one embodiment, the first wall 424 and the second wall 426 are oriented substantially parallel to each other. The third wall 434 and the fourth wall 436 are also substantially parallel to each other and extend between the first wall 424 and the second wall 426. Although the above orientation of the walls 424, 426, 434, 436 can be beneficially employed, it is contemplated that other wall configurations can also be utilized.

[0052] In one embodiment, the first wall 424 is coupled to the ion beam chamber 202, and the segment 412 is adjacent to and positioned opposite the worktable 206. The segment 412 is formed in the second wall 426 and includes a plurality of surfaces 428, 430, 432. The first surface 428 is angled relative to a reference plane defined by the second wall 426. The angle of the first surface 428 can be selected to be between about 1 degree and about 60 degrees relative to the reference plane defined by the second wall 426. Thus, the first surface 428 extends from the second wall 426 into the housing 422 at an angle and toward the first wall 424.

[0053] The second surface 430 extends between the first surface 428 and the third surface 432. The second surface 430 is oriented substantially parallel to the reference plane defined by the second wall 426. However, it is contemplated that the second surface 430 may be oriented at a non-parallel angle relative to the reference plane defined by the second wall 426. The third surface 432 extends from the second surface 430 to the second wall 426 at an adjacent first surface 428. The third surface 432 is angled relative to the reference plane defined by the second wall 426. In one example, the angle of the third surface 432 is substantially similar to the angle of the first surface 428. Alternatively, the angle of the third surface 432 may be different from the angle of the first surface 428. The size of the second surface 430 separates the third surface 432 from the first surface 428. Therefore, it is contemplated that the first surface 428 may be oriented at a wider range of angles to allow etching of the substrate 210 at an angle. In addition, it is believed that the spacing and orientation of the third surface 432 relative to the first surface 428 allows a larger area of ​​the substrate 210 to be processed at one time. Although three segments 412 are shown, it is contemplated that a greater or lesser number of segments 412 may be utilized to modulate the ion beam 216 depending on the area of ​​the substrate 210 desired to be etched. It is also contemplated that the sizes of the surfaces 428, 430, 432 relative to each other may be varied to modulate the angular characteristics of the ion beam 216.

[0054] In one embodiment, the electrode assembly 300 is positioned adjacent to the first surface 428 of the second wall 426 within the housing 422. For example, the electrode assembly 300 can be coupled to the first surface 428 within the housing 422. Figure 3 , the housing 308 of the electrode assembly 300 may include a shape selected to match or interface with the angle of the first surface 428. The first surface 428 may also include one or more openings 438 in the first surface 428, the one or more openings 438 adjacent to where the electrode assembly 300 is positioned to allow the ion beam 216 to pass through the first surface 428. Similarly, the first wall 424 may also have one or more openings 440 formed in the first wall 424, and the openings 440 formed in the first wall 424 may be aligned with one or both of the openings 438 formed in the first surface 428 or the electrode assembly 300. Thus, the ion beam 216 may propagate through the first wall 424 in a direction that is substantially orthogonal to a reference plane defined by the first wall 424, but exit the housing 422 through the first surface 428 of the second wall 426 at a predetermined angle.

[0055] Figure 4CA schematic side view of a segmented ion source 230 is shown in accordance with one embodiment of the present disclosure. The segmented ion source 230 is coupled to or otherwise integrated with the ion beam chamber 202 and segments 412 of the segmented ion source 230 are aligned or otherwise positioned to receive the ion beam 216 from the beam source 204.

[0056] The segmented ion source 230 includes a housing 442 having a first wall 444, a second wall 446, a third wall 454, and a fourth wall 456. In one embodiment, the first wall 444 and the second wall 446 are oriented substantially parallel to each other. The third wall 454 and the fourth wall 456 are also substantially parallel to each other and extend between the first wall 444 and the second wall 446. Although the above orientation of the walls 444, 446, 454, 456 can be beneficially employed, it is contemplated that other wall configurations can also be utilized.

[0057] In one embodiment, the first wall 444 is coupled to the ion beam chamber 202, and the segment 412 is adjacent to and positioned opposite the stage 206. The segment 412 is formed in the second wall 446 and includes a plurality of surfaces 448, 450, 452. The first surface 448 is angled relative to a reference plane defined by the second wall 446. The angle of the first surface 448 can be selected to be between about 1 degree and about 60 degrees relative to the reference plane defined by the second wall 446.

[0058] The second surface 450 extends between the first surface 448 and the third surface 452. The second surface 450 is oriented substantially parallel to a reference plane defined by the second wall 446. However, it is contemplated that the second surface 450 may be oriented at a non-parallel angle relative to the reference plane defined by the second wall 446. The third surface 452 extends from the second wall 446 at a non-orthogonal angle relative to the reference plane defined by the second wall 446. In this embodiment, the third surface 452 extends from the second wall 446 out of the housing 422 and away from the first wall 444 at an angle. Alternatively, the third surface 452 may extend from the second wall 446 at an angle orthogonal to the reference plane defined by the second wall 446.

[0059] In one example, the angle of the third surface 452 is substantially similar to the angle of the first surface 448. Alternatively, the angle of the third surface 452 can be different from the angle of the first surface 448. The size of the second surface 450 separates the third surface 452 from the first surface 448. Therefore, it is expected that the first surface 448 can be oriented at a wider range of angles to allow the substrate 210 to be etched at an angle. In addition, it is believed that the spacing and orientation of the third surface 452 relative to the first surface 448 allows a larger area of ​​the substrate 210 to be processed at one time. Although three segments 412 are shown, it is expected that a larger or smaller number of segments 412 can be used to modulate the ion beam 216 depending on the area of ​​the substrate 210 desired to be etched. It is also expected that the size of the surfaces 448, 450, 452 relative to each other can be changed to modulate the angular characteristics of the ion beam 216.

[0060] In one embodiment, the electrode assembly 300 is positioned within the housing 442 adjacent to the first surface 448 of the second wall 446. For example, the electrode assembly 300 can be coupled to the first surface 448 within the housing 442. Figure 3 , the housing 308 of the electrode assembly 300 may include a shape selected to match or interface with the angle of the first surface 448. The first surface 448 may also include one or more openings 458 in the first surface 448 adjacent to where the electrode assembly 300 is positioned to allow the ion beam 216 to pass through the first surface 448. Similarly, the first wall 444 may also have one or more openings 460 formed in the first wall 444, and the openings 460 formed in the first wall 444 may be aligned with one or both of the openings 458 formed in the first surface 448 or the electrode assembly 300. Thus, the ion beam 216 may propagate through the first wall 444 in a direction that is substantially orthogonal to a reference plane defined by the first wall 444, but exit the housing 442 through the first surface 448 of the second wall 446 at a predetermined angle.

[0061] The segmented ion source 230 coupled to the ion beam chamber 202 utilizes the segments 412 and the electrode assembly 300 to modulate the angle of the ion beam 216 generated by the beam source 204. The segments 412 and the electrode assembly 300 can be positioned or otherwise oriented in a manner to allow the substrate 210 to be etched at an angle. It is contemplated that the segmented ion source 230 can be modular in nature, and different segmented ion sources can be interchanged on the ion beam chamber 202 to facilitate different angled etching profiles of the substrate 210. The segmented ion source 230 can also be utilized to reduce the processing complexity associated with the movement of the stage 206 by reducing the variables associated with the movement of the stage 206 by the actuators 208, 220. The segmented ion source 230 can also be utilized in conjunction with the movement of the stage 206 via the actuators 208, 220 to allow for more complex or precise angled etching profiles of the substrate 210.

[0062] Figure 5A A schematic plan view of a filter plate 500 according to one embodiment of the present disclosure is shown. Figure 5B An embodiment of the present disclosure is shown in FIG. Figure 4C Schematic side view of a segmented ion source 230 with a filter plate 500 coupled to the segmented ion source 230. The filter plate 500 is adapted to interface with and be coupled to the segmented ion source 230 to modulate the intensity or distribution of the ion beam 216 passing through the filter plate 500.

[0063] Filter plate 500 comprises body 502, and body 502 has a plurality of holes 506,510,514 formed in body 502. Body 502 is made of material with sufficient thickness, and described material is resistant or inert to ion beam bombardment and prevents ions from passing through described material.Hole 506,510,514 extends through body 502 to form opening, and ion beam 216 passes through these openings.The first area 504 of body 502 comprises first plurality of holes 506.Although first area 504 is illustrated as occupying approximately one-third of body 502, it is expected that first area 504 may comprise a larger or smaller portion of body 502.First plurality of holes 506 are illustrated as being substantially circular, wherein the distribution between adjacent holes in first plurality of holes 506 is approximately uniform.However, any number, shape, orientation, spacing, or arrangement of first plurality of holes 506 may be utilized to modulate the intensity or distribution of ion beam 216 passing through first plurality of holes 506.

[0064] The second region 508 of the body 502 includes a second plurality of apertures 510. Although the second region 508 is illustrated as occupying approximately one-third of the body 502, it is contemplated that the second region 508 may include a larger or smaller portion of the body 502. The second plurality of apertures 510 are illustrated as being generally elliptical, with the distribution between adjacent apertures in the second plurality of apertures 510 being approximately uniform. However, any number, shape, orientation, spacing, or arrangement of the second plurality of apertures 510 may be utilized to modulate the intensity or distribution of the ion beam 216 passing through the second plurality of apertures 510.

[0065] The third region 512 of the body 502 includes a third plurality of apertures 514. Although the third region 512 is illustrated as occupying approximately one-third of the body 502, it is contemplated that the third region 512 may include a larger or smaller portion of the body 502. The third plurality of apertures 514 are illustrated as being generally circular, with the distribution between adjacent apertures in the third plurality of apertures 514 being approximately uniform. However, any number, shape, orientation, spacing, or arrangement of the third plurality of apertures 514 may be utilized to modulate the intensity or distribution of the ion beam 216 passing through the third plurality of apertures 514.

[0066] In one example, the first plurality of apertures 506 occupy an area of ​​the body 502 in the first region 504 that is greater than an area of ​​any of the second plurality of apertures 510 and / or the third plurality of apertures 514. In other words, the ion beam 216 passing through the first region 504 of the body 502 is less blocked when compared to the second region 508 and / or the third region 512. Therefore, the ion beam 216 passing through the first region 504 can contact the first region of the substrate 210 with a greater amount and intensity of ions. The second region 508 and the third region 512 have different arrangements, spacings, and shapes of the apertures 510, 514, respectively, and the ion beam 216 passing through the second and third regions is modulated such that the amount and intensity of ions contacting the substrate 210 in the second and third regions, respectively, is different from the amount and intensity of ions modulated by the first region 504.

[0067] In one example, an angled etch profile on the substrate 210 in a first region is produced by the ion beam 216 passing through the first plurality of apertures 506, an angled etch profile on the substrate 210 in a second region is produced by the ion beam 216 passing through the second plurality of apertures 510, and an angled etch profile on the substrate 210 in a third region is produced by the ion beam 216 passing through the third plurality of apertures 514. The different etch profiles of the fins or gratings formed on the substrate are produced by the regions 504, 508, 512 of the filter plate 500. It is contemplated that various aperture designs, shapes, spacings, densities, etc. incorporated in the filter plate 500 may be utilized to modulate the ion beam 216 characteristics and thus allow for different angled etch profiles on the substrate while utilizing a single ion beam chamber 202 and / or ion beam source 204.

[0068] Figure 5B An embodiment of the present disclosure is shown in FIG. Figure 4C 448 is a schematic side view of a segmented ion source 230, wherein a filter plate 500 is coupled to the segmented ion source 230. The filter plate 500 is coupled to a first surface 448 of the segmented ion source 230. The filter plate 500 can be coupled to the first surface 448 by a mechanical fastening device (e.g., bolts, screws, or the like), or the filter plate 500 can be integrated into the first surface 448 so that the first surface 448 and the filter plate 500 are a single body structure. In one embodiment, the filter plate 500 is set at an angle relative to a reference plane defined by the second wall 446. The electrode assembly 300 is disposed adjacent to the first surface 448 in the housing 442. The ion beam 216 entering the opening 460 is modulated, bent, or angled by the electrode assembly 300, and the angled ion beam 216 passes through the opening 458, where the intensity and / or distribution of the ion beam 216 is modulated by the filter plate 500. It is contemplated that the ion beam 216 that has been modulated by the filter plate 500 has a plurality of different characteristics that etch the substrate 210 differently depending on which regions 504, 508, 512 of the filter plate 500 the ion beam 216 passes through. Such different etch profiles and characteristics enabled by the filter plate 500 can be utilized to etch fins or gratings on the substrate 210 having different depths or other characteristics.

[0069] Although Figure 4C The segmented ion source 230 is illustrated with a filter plate 500, but it is contemplated that the filter plate 500 may also be advantageously combined with the filter plate 500. Figure 4A and Figure 4B For example, the filter plate 500 may be coupled to the segmented ion source 230. Figure 4A The first surface 408 of the segmented ion source 230, or the filter plate 500, may be coupled to Figure 4BThe filter plate 500 and the electrode assembly 300 may be disposed in various orientations different from those illustrated, depending on the configuration of the segmented ion source 230. For example, the electrode assembly 300 and the filter plate may be disposed in Figure 4B and Figure 4C On opposite sides of the third surface 432 , 452 of the segmented ion source 230 .

[0070] Figure 6 A schematic cross-sectional view of an electron beam etching system 600 according to one embodiment of the present disclosure is shown. An example of an electron beam etching system 600 is the SYM3 3000 available from Applied Materials, Inc. of Santa Clara, California. TM Devices that can be modified in accordance with various aspects of the present disclosure. It is contemplated that other suitable devices from other manufacturers may also benefit from the embodiments described herein.

[0071] The system 600 includes a chamber body 602 that surrounds or otherwise defines a process volume 640. The chamber body 602 can be made of a suitable material, such as stainless steel, aluminum, or alloys and combinations thereof. A first liner 636 is disposed adjacent to the chamber body 602 to protect the chamber body 602 from the processing environment of the process volume 640. In one example, the first liner 636 can be made of a process inert or resistant material, such as a ceramic material or other suitable material, such as a silicon-containing material, a carbon-containing material, a carbon-silicon material, or a silicon oxide-containing material.

[0072] A second liner 638 is also disposed adjacent to the chamber body 602, and the second liner 638 is positioned to substantially surround the process volume 640. In one embodiment, the second liner 638 is made of a dielectric material, such as a quartz or ceramic material. In another embodiment, the second liner 638 is made of a material similar to those used to make the first liner 636. The liners 636, 638 may also be coated with various materials similar to those used to make the liners 636, 638, and may be additionally coated with materials such as an aluminum oxide material, an yttrium oxide material, or a zirconium material. In certain embodiments, one or both of the first liner 636 and the second liner 638 are optional. In such an embodiment, the chamber body 602 may be manufactured and configured to function without a liner.

[0073] An exhaust port 648 is formed through the first liner 636 and the chamber body 602. The exhaust port 648 is formed through the first liner 636 and the chamber body 602 at a location below the susceptor 604 disposed in the process volume 640. A pump 650 is in fluid communication with the process volume 640 via the exhaust port 648 and in fluid communication with a pump port 646 surrounding the susceptor 604. The pump 650 allows material to be exhausted from the process volume 640. The cover 616 is coupled to or otherwise integrated with the chamber body 602 relative to the susceptor 604.

[0074] The pedestal 604 includes an electrode 606 disposed in the pedestal 604. In one embodiment, the electrode 606 is a suction device (e.g., an electrostatic chuck) that is used to secure the substrate 614 to the suction device during processing of the substrate 614. A conduit 610 (e.g., an electrical conduit or the like) is coupled between the electrode 606 and a power source 612. The power from the power source 612 can be used to bias the electrode 606 to either suction the substrate 614 to the electrode 606 or to affect the bombardment of electrons on the substrate 614. The electrode 606 and the conduit 610 are surrounded by an insulating material 608 (e.g., a dielectric material) to electrically insulate the electrode 606 and the conduit 610 from the pedestal 604.

[0075] An actuator 644 is coupled to the pedestal 604 and is configured to raise and lower the pedestal 604 within the process volume 640. The actuator 644 may also rotate the pedestal about a vertical axis. A bellows assembly 642 is disposed about a portion of the pedestal 604 that extends through the chamber body 602, and the bellows assembly 642 is operable to allow vertical movement of the pedestal 604 while maintaining a process environment of the process volume 640. For example, the bellows assembly 642 may be operable to maintain a process environment below atmospheric pressure within the process volume 640 while the pedestal 604 is raised or lowered.

[0076] The first gas source 630 is in fluid communication with the process volume 640 via a first conduit 628 extending through the chamber body 602. In one embodiment, the first gas source 630 is an inert gas source that supplies an inert gas, such as argon or helium, to the process volume 640. The second gas source 634 is in fluid communication with the process volume 640 via a second conduit 632 extending through the chamber body 602. In one embodiment, the second gas source 634 is a process gas source that supplies a process gas, such as a chlorine-containing gas, a fluorine-containing gas, a bromine-containing gas, an oxygen-containing gas, or the like, to the process volume 640.

[0077] In an alternative embodiment, the first gas source 630 and the second gas source 634 can be in fluid communication with the process volume 640 via the electrode 618. In this embodiment, conduits 628, 632 are coupled between the gas sources 630, 634 and the process volume 640 via the electrode 618, respectively. For example, the conduits 628, 632 can extend through the electrode 618, or the second electrode 618 can include a plurality of holes to serve as a gas delivery showerhead. The holes can be disposed on the angled surface 621 to provide a flow path for the gas from the gas sources 630, 634 into the process volume 640.

[0078] The electrode 618 is coupled to the cover 616, and the electrode 618 is oriented opposite to the electrode 606. The electrode 618 includes a segmented surface 620, and the segmented surface 620 includes a plurality of angled surfaces 621. In one embodiment, the substrate 614 is disposed on the electrode 606 of the base 604 in a generally horizontal orientation. In such an embodiment, the angled surfaces 621 are oriented in an angled and non-parallel orientation relative to either the major axis (horizontal line) of the substrate 614 or the electrode 606. In the illustrated embodiment, the angled surfaces 621 of the segmented surface 620 are generally uniform across the electrode 618. Alternatively, the angled surfaces 621 of the segmented surface 620 can be non-uniform. For example, the angled surfaces 621 can have different angles, or can be positioned, spaced, or otherwise oriented in a non-uniform manner to allow the manufacture of a waveguide with a non-uniform grating.

[0079] A conduit 624 (eg, an electrical conduit or the like) is coupled between the electrode 618 and a power source 626. The electrode 618 and conduit 624 are surrounded by an insulating material 622 (eg, a dielectric material) to electrically insulate the electrode 618 and conduit 624 from the cover 616.

[0080] In operation, a plasma is generated in the process volume 640 by various bulk and surface treatments (e.g., by capacitive coupling). In this embodiment, the power supply 626 is a radio frequency (RF) power supply. Depending on the desired electron beam characteristics, the power supply 626 can be operated to generate RF power having a frequency of about 13.56 MHz or about 2 MHz. For example, the RF power is applied to the electrode 618 in a constant or pulsed manner, and the electrode 606 is biased relative to the electrode 618. In another example, the RF power is applied to the electrode 618 and the electrode 606 remains unbiased. It is believed that the ions generated by the capacitively coupled plasma are affected by the electric field, which promotes the bombardment of the electrode 618 by the ions generated by the plasma. Other plasma generation processes (e.g., hollow cathode arrangements, DC electrode biasing, or electron beam plasma generation processes) can be utilized in accordance with the embodiments described herein.

[0081] The ion bombardment energy of the electrode 618 and the density of the plasma formed in the process volume 640 are controlled at least in part by the power supply 626 (e.g., RF power supply). It is believed that the ion bombardment of the electrode 618 heats the electrode 618 and causes the electrode 618 to emit secondary electrons. In one embodiment, the electrode 618 is made of a process compatible material with a high secondary electron emission coefficient (e.g., silicon, carbon, carbon silicon material, or silicon oxide material). The electrode 618 can also be made of a metal oxide material, such as aluminum oxide, yttrium oxide, or zirconium oxide.

[0082] High energy secondary electrons (which have a negative charge) are emitted from segmented surface 620 at an angle affected by angled surface 621 and are accelerated away from electrode 618 due to the bias of electrode 618. In this example, electrode 618 can be negatively biased. Angled surface 621 of segmented surface 620 is oriented at an angle between about 1° and about 75° relative to a horizontal reference plane defined by electrode 606. In this way, electron beam 660 is accelerated from electrode 618 at a non-orthogonal angle relative to electrode 606 and substrate 614.

[0083] The flux of high energy electrons from the segmented surface 620 of the electrode 618 is an electron beam. The beam energy of the electron beam 660 is approximately equal to the ion bombardment energy of the electrode 618. In one embodiment, the plasma potential is greater than the potential of the electrode 618, and as the secondary electrons of the electron beam 660 traverse the plasma formed in the process volume 640, the high energy secondary electrons emitted from the electrode 618 are further accelerated by the sheath voltage of the plasma.

[0084] At least a portion of the electron beam 660, including a secondary electron flux emitted from the electrode 618 due to energetic ion bombardment of the segmented surface 620, propagates through the process volume 640 and contacts the substrate 614 to etch the substrate 614. In one embodiment, in addition to the capacitively generated plasma, the electron beam 660 also generates chemically reactive radicals and ions that can adsorb to the surface of the substrate 614 and form a chemically reactive layer on the surface of the substrate 614.

[0085] Fig. 7A An angled etching process is shown being performed on a substrate at a first location according to one embodiment of the present disclosure. The substrate 210 has a grating material 212 disposed on the substrate 210, and a patterned hard mask 213 is disposed on a surface 702 of the grating material 212. In the illustrated embodiment, the substrate 210 is 1.5 meters away from the segmented ion source 230 (e.g., for Figure 2-5BThe ion beam system 200 described above is positioned at a first distance 710. In another embodiment, the substrate 210 can be processed by the system 600, which uses the segmented surface 620 of the electrode 618 to generate an electron beam to etch the grating material 212.

[0086] The ion beam 216 (or electron beam 660) is directed toward the substrate 210 at a non-orthogonal angle relative to the major axis of the substrate 210. The patterned resist 213 exposes certain areas at the surface 702 of the grating material 212, which are etched by the ion beam 216 or electron beam 660. As a result, grooves 704 and fins 706 are formed in the grating material 212. Although only two fins 706 and three grooves 704 are shown, the entire grating material 212 or a desired portion of the grating material 212 can be etched to form the grooves 704 and fins 706, depending on the grating design desired for the waveguide to be manufactured. The fins 706 and the grooves 704 together comprise a grating.

[0087] Figure 7B FIG. 1 illustrates a schematic diagram of an embodiment of the present disclosure during an angled etching process at a second location. Fig. 7A 600. The second position positions the substrate 210 a second distance 720 from the segmented ion source 230 (or the segmented surface 620 of the electrode 618). In one embodiment, the second distance 720 is less than the first distance 710. In another embodiment, the second distance 720 is greater than the first distance 710. Depending on the device 200, 600 utilized, the substrate 210 can be raised from the first distance 710 to the second distance 720 by the workbench 206 or the base 604. By changing the distance, the etching and beam exposure characteristics are changed, which results in different etch profiles of the grating material 212. For example, some grooves 704 can extend deeper into the grating material 212 from the surface 702, while other grooves are shallower. Therefore, the fins 706 can have different sizes and can modulate the light propagating through the waveguide.

[0088] Figure 8 The operations of a method 800 for etching a waveguide using an angled ion beam according to one embodiment of the present disclosure are illustrated. At operation 802, a waveguide (or a substrate to be fabricated into a waveguide, such as substrate 216) is positioned on a stage. In one example, the waveguide is positioned on stage 206. At operation 804, the stage is positioned a first distance from an angled ion beam source. For example, stage 206 is positioned a first distance 710 from segmented ion source 230.

[0089] At operation 806, ions are projected toward the waveguide from an angled ion beam source to form a fin having a first depth. At operation 808, the workbench is positioned at a second distance from the angled ion beam source. The second distance is different from the first distance. In one example, the workbench 206 is positioned at a second distance 720 from the segmented ion source 230. At operation 810, ions are projected toward the waveguide from an angled ion beam source to form a fin having a second depth different from the first depth. The depth of the fin 706 relates to the distance that the fin 706 extends into the grating material 212 and is also related to the depth of the groove 704. In one embodiment, the second depth is greater than the first depth. In another embodiment, the second depth is less than the first depth.

[0090] Fig. 9 The operations of a method 900 for etching a waveguide with an angled electron beam according to one embodiment of the present disclosure are illustrated. At operation 902, a waveguide (or a substrate to be fabricated into a waveguide, such as substrate 216) is positioned on a workbench. In one example, the waveguide is positioned on a pedestal 604. At operation 904, the workbench is positioned a first distance from an angled electron beam source. For example, the pedestal 604 is positioned a first distance 710 from a segmented surface 620 of an electrode 618.

[0091] At operation 906, electrons are projected toward the waveguide from an angled electron beam source to form a fin having a first depth. At operation 908, the workbench is positioned at a second distance from the angled electron beam source. The second distance is different from the first distance. In one example, the base 604 is positioned at a second distance 720 from the segmented surface 620 of the electrode 618. At operation 910, electrons are projected toward the waveguide from an angled electron beam source to form a fin having a second depth different from the first depth. The depth of the fin 706 relates to the distance that the fin 706 extends into the grating material 212 and is also related to the depth of the groove 704. In one embodiment, the second depth is greater than the first depth. In another embodiment, the second depth is less than the first depth.

[0092] Methods 800 and 900 allow waveguide fabrication using ion beams and electron beams, respectively. It is contemplated that methods 800 and 900 may utilize a single etching cycle or multiple etching cycles. In one example, a 45° angled etching process may be performed approximately 14 times, each time for a duration of approximately 300 seconds. In this example, an approximately 240nm deep groove is formed with an etching rate of approximately 3nm / minute. In another example, a 60° angled etching process may be performed approximately 18 times, each time for a duration of approximately 300 seconds. In this example, an approximately 190nm deep groove is formed with an etching rate of approximately 1.8nm / minute. However, it is contemplated that depending on the process variables of the ion beam or electron beam etching process and the desired etching angle, the apparatus and method described herein may allow an etching rate of up to approximately 50nm / minute.

[0093] The methods 800, 900 can be used for blanket etching of substrates over substantially the entire substrate surface, or for more localized etching processes when a specified area of ​​the substrate is preferentially etched relative to other areas. The segmented ion source 230 and the segmented surface 620 of the electrode 618 allow for improved angled etching efficiency using ion beams and electron beams, respectively. It is also contemplated that the segmented ion source 230 and the segmented surface 620 of the electrode 618 can be swapped out of their respective systems 200, 600 to more efficiently change the etch profiles of the waveguides that implement gratings having a plurality of fin heights and groove or trench depths or gratings having different angles.

[0094] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope of the disclosure, and the scope of the disclosure is determined by the claims that follow.

Claims

1. An electron beam etching device, comprising: a chamber body defining a process volume; a base disposed in the process volume; a first electrode coupled to the base; a cover coupled to the chamber body; and A second electrode is coupled to the cover, the second electrode comprising a segmented surface, the segmented surface comprising a plurality of angled surfaces, the plurality of angled surfaces being arranged in a non-orthogonal orientation relative to a reference plane defined by the first electrode, the segmented surface being arranged on the second electrode coupled to the cover, the second electrode being configured to emit an electron beam in the non-orthogonal orientation corresponding to the plurality of angled surfaces.

2. The apparatus of claim 1, wherein the plurality of angled surfaces of the segmented surface are substantially uniform across the second electrode.

3. An apparatus as claimed in claim 2, wherein the angled surfaces are arranged at an angle between 1° and 75° relative to the reference plane defined by the first electrode.

4. The device of claim 1, wherein at least one of the angles, positions, spacings, or orientations of the plurality of angled surfaces of the segmented surface are different.

5. The apparatus of claim 4, wherein the angled surfaces are disposed at one or more angles between 1° and 75° relative to the reference plane defined by the first electrode.

6. The apparatus of claim 1, wherein the pedestal is coupled to an actuator configured to raise and lower the pedestal within the process volume.

7. The apparatus of claim 6, wherein the actuator is operable to rotate the base about a vertical axis.

8. The device of claim 1, wherein the first electrode is electrically insulated from the base by an insulating material.

9. The device of claim 1, wherein the second electrode is electrically insulated from the cover by an insulating material.

10. The apparatus of claim 1, further comprising: An RF power source is coupled to the second electrode.

11. The apparatus of claim 1, wherein the first electrode is an electrostatic chuck.

12. The apparatus of claim 1, further comprising: A bellows assembly extends through a portion of the chamber body around the base.

13. The apparatus of claim 1, further comprising: A pump is in fluid communication with the process volume via an exhaust port formed in the chamber body.

14. The apparatus of claim 1, further comprising: One or more liners are disposed adjacent to the chamber body in the process volume.

15. The apparatus of claim 14, wherein the one or more pads comprise a silicon-containing material, a carbon-containing material, a carbon-silicon material, or a silicon oxide-containing material.

16. An electron beam etching device comprising: a chamber body defining a process volume; a base disposed in the process volume; a first electrode coupled to the base; a cover coupled to the chamber body; and A second electrode is coupled to the cover, the second electrode is made of a material with a high secondary electron emission coefficient, the second electrode includes a segmented surface, the segmented surface includes a plurality of angled surfaces, the plurality of angled surfaces are arranged in a non-orthogonal orientation relative to a reference plane defined by the first electrode, the segmented surface is arranged on the second electrode coupled to the cover, and the second electrode is configured to emit an electron beam in the non-orthogonal orientation corresponding to the plurality of angled surfaces.

17. The apparatus of claim 16, wherein the plurality of angled surfaces of the segmented surface are substantially uniform across the second electrode.

18. The apparatus of claim 17, wherein the angled surfaces are disposed at an angle between 1° and 75° relative to the reference plane defined by the first electrode.

19. The device of claim 16, wherein at least one of the angles, positions, spacings, or orientations of the plurality of angled surfaces of the segmented surface are different.

20. An electron beam etching device comprising: a chamber body defining a process volume; a base disposed in the process volume; an actuator coupled to the susceptor, the actuator operable to raise and lower the susceptor within the process volume; An electrostatic adsorption electrode is disposed in the base; a cover coupled to the chamber body; a second electrode coupled to the cover, the second electrode comprising a segmented surface, the segmented surface comprising a plurality of angled surfaces, the plurality of angled surfaces being disposed in a non-orthogonal orientation relative to a reference plane defined by the electrostatically attached electrode, the segmented surface being disposed on the second electrode coupled to the cover; and An RF power source is coupled to the second electrode, wherein the RF power source is operable to generate a plasma in the process volume, the second electrode being configured to emit an electron beam in the non-orthogonal orientation corresponding to the plurality of angled surfaces.

Images