A CVD deposition furnace device for preparing large-size C / C composite materials

Abstract

The present invention discloses a CVD deposition furnace device for preparing large-size C / C composite materials, comprising a furnace body, a splitter plate fixedly arranged inside the furnace body, the splitter plate dividing the inner part of the furnace body into a gas mixing chamber and a deposition chamber, the deposition chamber being arranged above the gas mixing chamber; an air intake assembly comprising an air intake nozzle, the air intake nozzle comprising a fixed plate and a plurality of groups of spiral sheets fixedly arranged on one side of the fixed plate, a spiral channel being arranged between two adjacent groups of spiral sheets, an air intake port being opened in the middle of the fixed plate, the air intake port being connected to an air intake pipe, and the air intake port being connected to the spiral channel. The present invention performs gas disturbance on the process gas through the air intake nozzle of the spiral structure, thereby improving the uniformity of the process gas diffused into the gas mixing chamber, and improving the uniformity of the later diffusion into the deposition chamber.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, and in particular to a CVD deposition furnace device for preparing large-size C / C composite materials. Background Art

[0002] As one of the most widely used technologies in the semiconductor industry, chemical vapor deposition (CVD) is a process in which a source gas containing raw material components is input into a CVD deposition furnace, and a solid film is deposited on a preform through diffusion and convection mechanisms to generate a finished product. In the CVD process, the structure of the CVD deposition furnace has a great influence on the deposition efficiency and deposition quality.

[0003] The existing traditional CVD deposition furnace is usually divided into a mixing chamber and a deposition chamber by a planar diverter plate. The source gas first enters the mixing chamber through the inlet pipe, and then enters the deposition chamber through the air holes on the diverter plate. Part of the source gas will be directly deposited on the diverter plate before entering the deposition chamber, resulting in excessive source gas loss and uneven distribution in the deposition chamber, affecting deposition efficiency and deposition quality. Summary of the invention

[0004] The purpose of the present invention is to provide a CVD deposition furnace device for preparing large-size C / C composite materials to solve the problems existing in the above-mentioned prior art.

[0005] To achieve the above-mentioned purpose, the present invention provides the following solution: The present invention provides a CVD deposition furnace device for preparing large-size C / C composite materials, comprising a furnace body, an air intake assembly is fixedly arranged at the bottom of the furnace body, a diverter plate is fixedly arranged inside the furnace body, and the diverter plate divides the inner part of the furnace body into a mixing chamber and a deposition chamber, and the deposition chamber is arranged above the mixing chamber.

[0006] The air intake assembly includes an air intake nozzle, which includes a fixed plate and several groups of spiral blades fixedly arranged on one side of the fixed plate, a spiral channel is arranged between two adjacent groups of spiral blades, an air intake port is opened in the middle of the fixed plate, the air intake port is connected to an air intake pipe, and the air intake port is communicated with the spiral channel.

[0007] Preferably, the air inlet nozzle is a hemispherical structure, the distance between any two adjacent groups of the spiral sheets is the same, and the air outlet of the spiral channel is arranged on the spherical wall of the air inlet nozzle.

[0008] Preferably, the spiral piece is in the shape of a quarter ring, the front and rear end surfaces of the spiral piece are arc-shaped surfaces facing the same direction, and the end lines on both sides of the front and rear end surfaces of the spiral piece are the inner and outer arc lines of the ring.

[0009] Preferably, a hemispherical gas distribution cavity and a shuttle-shaped gas distribution cavity are provided in the middle of the gas inlet nozzle, and the hemispherical gas distribution cavity is in contact with and communicated with the gas inlet.

[0010] Preferably, the diverter plate is provided with a plurality of circular through holes, and the diameter of the through holes increases as the distance between the through holes and the center of the diverter plate increases.

[0011] Preferably, the through holes are divided into three groups, and the three groups are respectively arranged on the circumferential arc lines of the diverter plate.

[0012] Preferably, two groups of heightened pads are fixedly provided circumferentially on the upper end surface of the diverter plate, each group of heightened pads includes no less than three heightened graphite blocks, and the top surface of the inner heightened graphite block is lower than the top surface of the outer heightened graphite block.

[0013] Preferably, a base is provided at the bottom of the furnace body, a heater is fixedly provided on the base, a heat-insulating layer is fixedly provided on the outer side of the heater, and the material of the heat-insulating layer is silicate fiber cotton.

[0014] Preferably, the deposition furnace device further comprises a water cooling system, and the water cooling system is arranged on the outside of the furnace body and the base.

[0015] The present invention discloses the following technical effects: the present invention strengthens the disturbance of the process gas through the spiral structure of the air inlet nozzle, thereby improving the uniformity of the process gas diffused into the mixing chamber; at the same time, a through hole is opened on the diverter plate, and the aperture of the through hole gradually increases from the inside to the outside along the radial direction, which can make the density of the workpieces placed in the inner and outer layers more consistent, and avoid the generation of a large density gradient in products of different layers; the gas diverter plate is provided with a heightened graphite strip, and the height of the inner layer is lower than that of the outer layer, which can effectively increase the flow space of the source gas and improve the process densification efficiency and the uniformity of the organizational structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0017] Figure 1 It is a schematic diagram of the structure of the deposition furnace device of the present invention;

[0018] Figure 2 This is a schematic diagram of the structure of the diverter plate of the present invention;

[0019] Figure 3 This is a schematic diagram of the structure of the air intake nozzle of the present invention when viewed from above;

[0020] Figure 4 This is a schematic diagram of the air inlet nozzle structure of the present invention;

[0021] Figure 5 This is a schematic structural diagram of the air inlet nozzle of the present invention from another perspective;

[0022] Figure 6 It is a schematic diagram of the spiral sheet structure of the present invention.

[0023] Among them, 1 is the furnace body, 21 is the air inlet nozzle, 211 is the fixed plate, 212 is the spiral sheet, 213 is the spiral channel, 214 is the air inlet, 215 is the hemispherical gas distribution chamber, 216 is the shuttle-shaped gas distribution chamber, 22 is the air inlet pipe, 3 is the diverter plate, 31 is the through hole, 32 is the heightened graphite block, 4 is the mixing chamber, 5 is the deposition chamber, and 6 is the base. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0026] Reference Figure 1-6 The present invention provides a CVD deposition furnace device for preparing large-size C / C composite materials, including a furnace body 1, an air intake assembly is fixedly arranged at the bottom of the furnace body 1, a diverter plate 3 is fixedly arranged inside the furnace body 1, the diverter plate 3 divides the inside of the furnace body 1 into a mixing chamber 4 and a deposition chamber 5, and the deposition chamber 5 is arranged above the mixing chamber 4.

[0027] The air intake assembly includes an air intake nozzle 21, which includes a fixed plate 211 and a plurality of spiral blades 212 fixedly arranged on one side of the fixed plate 211, a spiral channel 213 is arranged between two adjacent groups of spiral blades 212, and an air inlet 214 is provided in the middle of the fixed plate 211, and the air inlet 214 is connected to the air intake pipe 22, and the air inlet 214 is connected to the spiral channel 213. The process gas enters the mixing chamber 4 from the air intake nozzle 21 through the air intake pipe 22. Since the air intake nozzle 21 is composed of a plurality of spiral blades 212, the spiral structure can enhance the disturbance of the process gas, so that the process gas can be more evenly distributed in the mixing chamber 4. The materials of the diverter plate 3 and the air intake nozzle 21 are both graphite or C / C composite materials.

[0028] A further optimized solution is that the air inlet nozzle 21 is a hemispherical structure, and the distance between any two adjacent groups of spiral blades 212 is the same. The air outlet of the spiral channel 213 is arranged on the spherical wall of the air inlet nozzle 21. Since the air outlet of the spiral channel 213 is arranged on the spherical wall, the process gas has a certain wind direction through the guiding effect of the spiral blades 212, and the air outlets evenly arranged on the spherical wall can make the internal gas have a certain rotating wind direction, so that the process gas produces a rotating direction in the mixing chamber, so that it is more evenly distributed in the mixing chamber 4.

[0029] The spiral blade 212 is in the shape of a quarter ring, and the front and rear end surfaces of the spiral blade 212 are arc-shaped surfaces facing the same direction, and the end lines on both sides of the front and rear end surfaces of the spiral blade 212 are the inner and outer arc lines of the ring. A hemispherical gas distribution chamber 215 and a shuttle-shaped gas distribution chamber 216 are provided in the middle of the air inlet nozzle 21, and the hemispherical gas distribution chamber 215 is in contact with and connected to the air inlet 214. The shuttle-shaped gas distribution chamber 216 is smaller than the hemispherical gas distribution chamber 215. After the process gas enters the air inlet nozzle 21, when the pressure is relatively high, it enters the spiral channel 213 between the upper parts of the spiral blade 212 through the large-volume hemispherical gas distribution chamber 215, and the remaining process gas is divided into batches through the smaller shuttle-shaped gas distribution chamber 216, so that it is distributed through the channel at the lower part of the spiral blade 212, and the air inlet pipe 22 is distributed more evenly through the two distribution chambers, so that it enters the mixing chamber 4 more evenly.

[0030] To further optimize the solution, a plurality of circular through holes 31 are provided on the manifold plate 3, and the diameter of the through hole 31 increases as the distance between the through hole 31 and the center of the manifold plate 3 increases. The through holes 31 are divided into three groups, and the three groups are respectively arranged on the circumferential arc line of the manifold plate 3. The process gas enters the deposition chamber 5 through the circular through holes 31 on the manifold plate 3. Since the circular through holes 31 on the manifold plate 3 are of different sizes, the circular through holes 31 closer to the edge have larger diameters, and the circular through holes 31 in the center of the manifold plate 3 are the smallest, so the airflow can enter the edge area of ​​the deposition chamber 5 at a larger flow rate, which effectively changes the problem of uneven concentration caused by the air intake device being close to the central axis of the gas manifold plate; it makes the airflow distribution in the deposition chamber 5 more uniform, preventing them from entering the deposition chamber 5 through the middle hole, causing uneven deposition.

[0031] Two groups of heightened pads are fixedly arranged on the circumferential direction of the upper end surface of the manifold 3, and each group of heightened pads includes no less than three heightened graphite blocks 32. The top surface of the heightened graphite block 32 located on the inner side is lower than the top surface of the heightened graphite block 32 located on the outer side. Before loading the workpiece into the furnace, it is placed on the heightened graphite block 32 from the inside to the outside. The height of the inner layer of heightened graphite block 32 is lower than that of the outer layer, so that the flow space of the process gas is increased, which can effectively improve the uniformity of gas flow and the density of the workpiece.

[0032] According to a further optimization scheme, a base 6 is provided at the bottom of the furnace body 1, a heater is fixedly provided on the base 6, an insulation layer is fixedly provided on the outer side of the heater, and the material of the insulation layer is silicate fiber cotton, and the deposition furnace is heated by the heater.

[0033] A further optimization scheme also includes a water cooling system, which is arranged on the outside of the furnace body 1 and the base 6 to cool the entire device; the water cooling system is a prior art and will not be described in detail here.

[0034] In the description of the present invention, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0035] The embodiments described above are only descriptions of the preferred modes of the present invention, and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should all fall within the protection scope determined by the claims of the present invention.

Claims

1. A CVD deposition furnace device for preparing large-size C / C composite materials, characterized in that: The invention comprises a furnace body (1), an air intake assembly is fixedly arranged at the bottom of the furnace body (1), a flow divider plate (3) is fixedly arranged inside the furnace body (1), the flow divider plate (3) divides the interior of the furnace body (1) into a gas mixing chamber (4) and a deposition chamber (5), and the deposition chamber (5) is arranged above the gas mixing chamber (4); The air intake assembly comprises an air intake nozzle (21), the air intake nozzle (21) comprises a fixed plate (211) and a plurality of groups of spiral sheets (212) fixedly arranged on one side of the fixed plate (211), a spiral channel (213) is arranged between two adjacent groups of the spiral sheets (212), an air intake port (214) is opened in the middle of the fixed plate (211), the air intake port (214) is connected to an air intake pipe (22), and the air intake port (214) is in communication with the spiral channel (213); The air inlet nozzle (21) is a hemispherical structure, the distance between any two adjacent groups of spiral sheets (212) is the same, and the air outlet of the spiral channel (213) is arranged on the spherical wall of the air inlet nozzle (21); A hemispherical gas distribution chamber (215) and a shuttle-shaped gas distribution chamber (216) are provided in the middle of the gas inlet nozzle (21); the hemispherical gas distribution chamber (215) is in contact with and connected to the gas inlet (214); and the shuttle-shaped gas distribution chamber (216) is adjacent to and connected to the hemispherical gas distribution chamber (215).

2. A CVD deposition furnace device for preparing large-size C / C composite materials according to claim 1, characterized in that: The spiral piece (212) is in the shape of a quarter of a circle, the front and rear end surfaces of the spiral piece (212) are arc-shaped surfaces facing the same direction, and the end lines on both sides of the front and rear end surfaces of the spiral piece (212) are the inner and outer arc lines of the circle.

3. The CVD deposition furnace device for preparing large-size C / C composite materials according to claim 1, characterized in that: The diverter plate (3) is provided with a plurality of circular through holes (31), and the diameter of the through holes (31) increases as the distance between the through holes (31) and the center of the diverter plate (3) increases.

4. The CVD deposition furnace device for preparing large-size C / C composite materials according to claim 3, characterized in that: The through holes (31) are divided into three groups, and the three groups are respectively arranged on the circumferential arc lines of the diverter plate (3).

5. The CVD deposition furnace device for preparing large-size C / C composite materials according to claim 1, characterized in that: Two groups of heightened pads are fixedly arranged in the circumferential direction on the upper end surface of the diverter plate (3), each group of heightened pads comprising no less than three heightened graphite blocks (32), the top surface of the heightened graphite block (32) located on the inner side being lower than the top surface of the heightened graphite block (32) located on the outer side.

6. The CVD deposition furnace device for preparing large-size C / C composite materials according to claim 1, characterized in that: A base (6) is provided at the bottom of the furnace body (1), a heater is fixedly provided on the base (6), and a heat-insulating layer is fixedly provided on the outer side of the heater, wherein the material of the heat-insulating layer is silicate fiber cotton.

7. A CVD deposition furnace device for preparing large-size C / C composite materials according to claim 6, characterized in that: It also includes a water cooling system, which is arranged on the outside of the furnace body (1) and the base (6).

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