Processing liquid temperature control method, substrate processing method, processing liquid temperature control device and substrate processing system

Abstract

The present invention provides a treatment liquid temperature control method, a substrate processing method, a treatment liquid temperature control device and a substrate processing system, which can quickly achieve a target concentration of a treatment liquid used to process a substrate. The treatment liquid temperature control method comprises: a step (S1), heating the treatment liquid (LQ) used to process a substrate (W) to a temperature above the standard boiling point of the treatment liquid (LQ); a step (S2), supplying a gas (GA) to the treatment liquid (LQ) stored in a first storage tank (210) to promote the evaporation of water from the heated treatment liquid (LQ); and a step (S3), discharging water vapor and gas (GA) from the first storage tank (210). The treatment liquid (LQ) is a liquid containing phosphoric acid.

Description

Technical Field

[0001] The invention relates to a processing liquid temperature regulating method, a substrate processing method, a processing liquid temperature regulating device and a substrate processing system. Background Art

[0002] The substrate processing apparatus described in Patent Document 1 includes a processing tank, an acquisition unit, a storage unit, a specifying unit, and a control unit.

[0003] The processing tank processes the substrate using the processing liquid. The acquisition unit acquires the processing information of the substrate in advance. The storage unit stores the corresponding information, which is information describing a plurality of situations that the processing information can take and a plurality of concentration change patterns prepared in advance corresponding to each of the plurality of situations. The specifying unit specifies the predicted concentration change pattern corresponding to the acquired processing information of the substrate by referring to the corresponding information. While the substrate is being processed in the processing tank, the control unit controls the concentration of the processing liquid based on the predicted concentration change pattern.

[0004] As a result, even in the case where a large change in the concentration of the component in the processing liquid occurs along with the processing of the substrate, the concentration of the processing liquid during the processing of the substrate can be controlled.

[0005] In particular, in the stacked substrate described in Patent Document 1, multiple layers of oxide films and multiple layers of polysilicon films are stacked on the upper surface of the substrate body, and holes are formed that penetrate these multiple layers in their stacking direction. When the stacked substrate is immersed in an etching solution (phosphoric acid), the etching solution enters the hole, selectively etches each polysilicon layer from the inner peripheral surface (side wall) of the hole, and each polysilicon layer retreats from the inner peripheral surface of the hole. The more films stacked on the substrate body and the deeper the hole, the larger the contact area between the inner peripheral surface of the hole and the etching solution, so the etching amount per unit time is greater. Because the amount of silicon dissolved from the substrate into the etching solution is related to the etching amount, when etching a stacked substrate with a large number of layers, the concentration change of the changed component (silicon) in the processing liquid accompanying the etching is greater than the change when etching a stacked substrate with a small number of layers.

[0006] In the substrate processing apparatus described in Patent Document 1, a control unit controls the driving of a pump for replenishing the replenishing liquid stored in a standby tank to the processing tank based on a predicted concentration change pattern, thereby replenishing the processing liquid from the standby tank to the processing tank. As a result, even when the concentration change of the processing liquid is large due to the processing of a laminated substrate with a large etching amount, the concentration of the processing liquid can be maintained during the processing of the substrate.

[0007] [Background Technology Literature]

[0008] [Patent Document]

[0009] [Patent Document 1] Japanese Patent Application Publication No. 2018-164000 Summary of the invention

[0010] [Problems to be solved by the invention]

[0011] However, in the substrate processing apparatus described in Patent Document 1, if the substrate is further layered, the concentration change of the variable component (silicon) in the processing liquid accompanying etching will become greater. Therefore, a large amount of processing liquid with adjusted concentration must be replenished from the spare tank to the processing tank. However, in the spare tank, it may be too late to adjust the concentration, and thus a large amount of processing liquid with adjusted concentration cannot be supplied to the processing tank.

[0012] The present invention is completed in view of the above-mentioned problems, and its purpose is to provide a processing liquid temperature control method, a substrate processing method, a processing liquid temperature control device and a substrate processing system that can quickly reach the concentration of a processing liquid used to process a substrate to a target value.

[0013] [Technical means to solve the problem]

[0014] According to one aspect of the present invention, a method for regulating the temperature of a processing liquid comprises the following steps: heating a processing liquid used for processing a substrate to a temperature above the standard boiling point of the processing liquid; supplying a gas that promotes evaporation of water from the heated processing liquid to the processing liquid stored in a first storage tank; and discharging water vapor and the gas from the first storage tank. The processing liquid is a liquid containing phosphoric acid.

[0015] The processing liquid temperature control method of the present invention preferably further includes the step of supplying the processing liquid from the first storage tank directly or indirectly to a substrate processing section that processes the substrate.

[0016] The process liquid temperature control method of the present invention preferably further comprises the following steps: after the concentration of the process liquid stored in the first storage tank reaches a target value, supplying the process liquid from the first storage tank to the second storage tank; and regulating the temperature of the process liquid stored in the second storage tank so that the concentration of the process liquid is maintained at the target value. Preferably, in the step of supplying the process liquid, the process liquid is supplied from the second storage tank to the substrate processing unit.

[0017] In the process liquid temperature control method of the present invention, the first storage tank is preferably a process tank for immersing the substrate in the process liquid to process the substrate. The step of heating the process liquid and the step of supplying the gas are preferably performed while the substrate is not immersed in the process liquid.

[0018] In the treatment liquid temperature control method of the present invention, the step of heating the treatment liquid and the step of supplying the gas are preferably performed after part or all of the treatment liquid stored in the first storage tank is discharged and part or all of the treatment liquid is replaced with new treatment liquid.

[0019] According to another aspect of the present invention, a processing liquid temperature control method includes the following steps: heating the processing liquid used to process a substrate to above the standard boiling point of the processing liquid; supplying a gas to the processing liquid stored in a first storage tank to promote the evaporation of water from the heated processing liquid; discharging water vapor and the gas from the first storage tank; after the concentration of the processing liquid stored in the first storage tank reaches a target value, supplying the processing liquid from the first storage tank to a second storage tank; adjusting the temperature of the processing liquid stored in the second storage tank to maintain the concentration of the processing liquid at the target value; and supplying the processing liquid from the second storage tank to a substrate processing part that processes the substrate.

[0020] According to another aspect of the present invention, a substrate processing method includes the processing liquid temperature adjustment method and a step of processing the substrate using the processing liquid.

[0021] According to another aspect of the present invention, the processing liquid temperature control device comprises a first temperature control unit, a first storage tank, a gas supply component and an exhaust piping unit. The first temperature control unit heats the processing liquid used to process the substrate to a standard boiling point or above. The first storage tank stores the processing liquid heated by the first temperature control unit. The gas supply component supplies the processing liquid stored in the first storage tank with a gas that promotes the evaporation of water from the processing liquid. The exhaust piping unit exhausts water vapor and the gas from the first storage tank. The processing liquid is a liquid containing phosphoric acid.

[0022] In the processing liquid temperature control device of the present invention, it is preferable that the first storage tank directly or indirectly supplies the processing liquid to a substrate processing section that processes the substrate.

[0023] The processing liquid temperature control device of the present invention preferably further comprises a second storage tank and a second temperature control unit. Preferably, the second storage tank is supplied with the processing liquid from the first storage tank after the concentration of the processing liquid stored in the first storage tank reaches a target value. Preferably, the second temperature control unit adjusts the temperature of the processing liquid stored in the second storage tank so that the concentration of the processing liquid is maintained at the target value. Preferably, the second storage tank supplies the processing liquid to the substrate processing unit.

[0024] In the treatment liquid temperature control device of the present invention, the first storage tank is preferably a treatment tank for treating the substrate by immersing the substrate in the treatment liquid. The first temperature control unit preferably heats the treatment liquid to a temperature above the standard boiling point during a period when the substrate is not immersed in the treatment liquid. The gas supply component preferably supplies the gas to the treatment liquid stored in the first storage tank during the period when the substrate is not immersed in the treatment liquid.

[0025] In the treatment liquid temperature control device of the present invention, preferably, after part or all of the treatment liquid stored in the first storage tank is discharged and part or all of the treatment liquid is replaced with new treatment liquid, the first temperature control unit heats the treatment liquid to above the standard boiling point. Preferably, after part or all of the treatment liquid stored in the first storage tank is discharged and part or all of the treatment liquid is replaced with new treatment liquid, the gas supply component supplies the gas to the treatment liquid stored in the first storage tank.

[0026] According to another aspect of the present invention, the processing liquid temperature control device comprises a first temperature control part, a first storage tank, a gas supply component, an exhaust piping part, a second storage tank and a second temperature control part. The first temperature control part heats the processing liquid used to process the substrate to a standard boiling point or above the processing liquid. The first storage tank stores the processing liquid heated by the first temperature control part. The gas supply component supplies the processing liquid stored in the first storage tank with a gas that promotes the evaporation of water from the processing liquid. The exhaust piping part discharges water vapor and the gas from the first storage tank. After the concentration of the processing liquid stored in the first storage tank reaches a target value, the second storage tank is supplied with the processing liquid from the first storage tank. The second temperature control part adjusts the temperature of the processing liquid stored in the second storage tank so that the concentration of the processing liquid is maintained at the target value. The second storage tank supplies the processing liquid to the substrate processing part that processes the substrate.

[0027] In the treatment liquid temperature control device of the present invention, the exhaust pipe section preferably includes an exhaust pipe for exhausting the water vapor and the gas from the first storage tank. The cross-sectional area of ​​the flow path of the exhaust pipe preferably satisfies the following formula.

[0028] A×V≧Q

[0029] A: The cross-sectional area of ​​the flow path of the exhaust pipe

[0030] V: Flow rate of the exhaust gas flowing through the flow path of the exhaust pipe when the process of heating the process liquid to a temperature higher than the standard boiling point and the process of supplying the gas to the process liquid are not performed

[0031] Q: The exhaust volume of the water vapor and the gas per unit time

[0032] In the processing liquid temperature regulating device of the present invention, it is preferable that the material of the gas supply member is resin.

[0033] According to another aspect of the present invention, a substrate processing system includes: the processing liquid temperature control device; and a substrate processing unit that processes the substrate using the processing liquid.

[0034] [Effects of the Invention]

[0035] According to the present invention, the concentration of a processing liquid used to process a substrate can quickly reach a target value. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 It is a schematic diagram showing a substrate processing system according to Embodiment 1 of the present invention.

[0037] Figure 2 This is a schematic cross-sectional view showing a first storage tank of the substrate processing system according to the first embodiment.

[0038] Figure 3 This is a schematic plan view showing a gas supply unit of the substrate processing system according to the first embodiment.

[0039] Figure 4 This is a flowchart showing the substrate processing method according to the first embodiment.

[0040] Figure 5 It is a schematic diagram showing a substrate processing system according to a second embodiment of the present invention.

[0041] Figure 6 It is a flowchart showing the substrate processing method of embodiment 2.

[0042] Figure 7 It is a schematic cross-sectional view showing a substrate processing system according to a third embodiment of the present invention.

[0043] Figure 8 (a) is a diagram showing a state of the substrate before being immersed in the processing liquid according to Embodiment 3. (b) is a diagram showing a state of the substrate after being immersed in the processing liquid according to Embodiment 3.

[0044] Fig. 9 This is a schematic top view showing a gas supply unit of a substrate processing system according to a third embodiment.

[0045] Fig.10 It is a flowchart showing the substrate processing method of embodiment 3.

[0046] Fig.11It is a graph showing the time change of the specific gravity value of the processing liquid of Example 1 and Example 2 of the present invention and the comparative example. DETAILED DESCRIPTION

[0047] Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the same reference symbols are marked on the same or corresponding parts in the figures, and the description will not be repeated. In addition, in the embodiments of the present invention, the X-axis, the Y-axis and the Z-axis are orthogonal to each other, the X-axis and the Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0048] (Implementation Method 1)

[0049] Reference Figure 1 to Figure 4 , the substrate processing system 100 and the substrate processing method according to the first embodiment of the present invention are described. Figure 1 The substrate processing system 100 will be described.

[0050] Figure 1 Schematic diagram showing a substrate processing system 100 according to Embodiment 1 of the present invention. Figure 1 The substrate processing system 100 shown is a batch type. Therefore, the substrate processing system 100 processes a plurality of substrates W at once using the processing liquid LQ. The processing liquid LQ is used to perform at least one of etching processing, surface processing, property imparting, processing film formation, at least partial film removal, and cleaning on the plurality of substrates W.

[0051] The treatment liquid LQ is, for example, a liquid (e.g., a chemical solution) used by boiling a specific component to make the concentration higher than that at room temperature or normal temperature. The liquid used by boiling a specific component to make the concentration higher than that at room temperature or normal temperature is, for example, a liquid containing phosphoric acid. In this case, the "specific component" is "phosphoric acid."

[0052] The liquid containing phosphoric acid is, for example, an aqueous solution of phosphoric acid (hereinafter referred to as “aqueous phosphoric acid solution”), a liquid containing an additive in an aqueous phosphoric acid solution, a mixed acid containing phosphoric acid, or a mixed acid containing phosphoric acid and an additive.

[0053] The substrate W is, for example, a semiconductor wafer, a liquid crystal display device substrate, a plasma display substrate, a field emission display (FED) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a mask substrate, a ceramic substrate, or a solar cell substrate.

[0054] The semiconductor wafer as the substrate W has, for example, a surface pattern for forming a three-dimensional flash memory (for example, a three-dimensional NAND (Not AND) flash memory). For example, the surface pattern has a structure including one or more recesses (for example, grooves or holes), and the structure is formed by alternately stacking silicon oxide films and silicon nitride films, or alternately stacking silicon oxide films and polysilicon films. In this case, the silicon nitride film or polysilicon film exposed on the side of the recess of the surface pattern is selectively etched using the processing liquid LQ. In this case, for example, a liquid containing phosphoric acid is used as the processing liquid LQ.

[0055] like Figure 1 As shown, the substrate processing system 100 includes a processing device U1, a processing liquid temperature control device U2, a cooling tank group U3, a control device U4 and a pipe P1. The control device U4 controls the processing device U1 and the processing liquid temperature control device U2. The control device U4 is, for example, a computer. In detail, the control device U4 includes a processor and a storage device. The processor includes, for example, a CPU (Central Processing Unit). The storage device stores data and computer programs. The storage device includes, for example, a main storage device and an auxiliary storage device. The main storage device includes, for example, a semiconductor memory. The auxiliary storage device includes, for example, a semiconductor memory, a solid state drive and / or a hard disk drive. The auxiliary storage device may also include, for example, a removable medium.

[0056] The processing apparatus U1 includes a plurality of substrate processing units 1, a plurality of cooling tanks 5, a plurality of valves 9, a plurality of valves 11, and a plurality of pipes P2. The plurality of cooling tanks 5 are arranged corresponding to the plurality of substrate processing units 1, respectively.

[0057] Each of the plurality of substrate processing units 1 processes a substrate W using a processing liquid LQ. Specifically, each of the plurality of substrate processing units 1 is a batch type, and processes a plurality of substrates W together using a processing liquid LQ. Each of the plurality of substrate processing units 1 includes a processing tank 3. Each processing tank 3 stores a processing liquid LQ. In addition, each processing tank 3 accommodates a plurality of substrates W. A plurality of substrates W are immersed in the processing liquid LQ of each processing tank 3. As a result, in each processing tank 3, a plurality of substrates W are processed using the processing liquid LQ.

[0058] Specifically, the processing tank 3 has a double tank structure including an inner tank 31 and an outer tank 33. The inner tank 31 and the outer tank 33 each have an upper opening opened upward. The inner tank 31 is configured to store the processing liquid LQ and can accommodate a plurality of substrates W. The outer tank 33 is provided on the outer side of the upper opening of the inner tank 31.

[0059] The pipe P2 is branched from the pipe P1. The pipe P2 extends to the cooling tank 5. Moreover, a valve 9 is disposed on the pipe P2. The valve 9 closes or opens the pipe P2. The pipe P2 is opened by the valve 9, and the pipe P2 guides the processing liquid LQ overflowing from the outer tank 33 to the cooling tank 5. Moreover, the cooling tank 5 cools the processing liquid LQ and then discharges the processing liquid LQ.

[0060] The pipe P1 extends to the cooling tank group U3. The cooling tank group U3 includes a plurality of cooling tanks 350 corresponding to the plurality of substrate processing units 1. The pipe P1 extends from the processing tank 3 to the cooling tank 350. Furthermore, a valve 11 is disposed on the pipe P1. The valve 11 closes or opens the pipe P1. The pipe P1 is opened by the valve 11, and the pipe P1 guides the processing liquid LQ overflowing from the outer tank 33 to the cooling tank 350. Furthermore, the cooling tank 350 discharges the processing liquid LQ after cooling the processing liquid LQ.

[0061] The processing liquid temperature control device U2 supplies the processing liquid LQ to each substrate processing part 1 (specifically, each processing tank 3). In other words, the processing liquid temperature control device U2 replenishes the processing liquid LQ to each substrate processing part 1 (specifically, each processing tank 3).

[0062] Specifically, the treatment liquid temperature control device U2 includes a first temperature control unit 200 and a second temperature control unit 300. The first temperature control unit 200 heats the treatment liquid LQ to evaporate water from the treatment liquid LQ supplied from the treatment liquid supply source TKA, thereby making the concentration of the treatment liquid LQ reach a target value. The target value of the concentration may also have a fixed range. The concentration of the treatment liquid LQ represents the concentration of a specific component in the treatment liquid LQ. When the treatment liquid LQ is a liquid containing phosphoric acid, the concentration of the treatment liquid LQ represents the concentration of phosphoric acid in the treatment liquid LQ (hereinafter referred to as "phosphoric acid concentration").

[0063] Furthermore, the first temperature control unit 200 supplies the processing liquid LQ having a concentration reaching a target value to the second temperature control unit 300. The second temperature control unit 300 maintains the temperature and concentration of the processing liquid LQ supplied from the first temperature control unit 200, and supplies the processing liquid LQ to each substrate processing part 1 (specifically, each processing tank 3). That is, the second temperature control unit 300 replenishes the processing liquid LQ to each substrate processing part 1 (specifically, each processing tank 3).

[0064] Specifically, the first temperature control unit 200 includes a first storage tank 210, a first measuring unit 212, a valve 214, a first filter 215, a first heater 216, a first pump 218, a valve 220, a flow regulating valve 221, a valve 222, a valve 223, a piping P4, a piping P5, a first circulation piping P6, a piping P7 and a piping P10. Figure 1In the example of , the first temperature control unit 200 includes a plurality of first heaters 216 (specifically, two first heaters 216) connected in series. The first heater 216 is an example of a "first temperature control unit". In addition, for example, the first filter 215 may be omitted in the first temperature control unit 200.

[0065] The second temperature control unit 300 includes a second storage tank 310, a second measuring unit 312, a plurality of valves 314, a second filter 315, a second heater 316, a second pump 318, a plurality of pipes P3, a pipe P8, a valve 320, and a second circulation pipe P9. The second heater 316 corresponds to an example of a "second temperature control unit".

[0066] In the first temperature control unit 200, the pipe P4 extends from the treatment liquid supply source TKA to the first storage tank 210. The valve 222 is arranged on the pipe P4. The valve 222 closes or opens the pipe P4. The pipe P5 extends from the diluent supply source TKB to the first storage tank 210. The valve 224 is arranged on the pipe P5. The valve 224 closes or opens the pipe P5.

[0067] The first circulation pipe P6 extends from the bottom to the upper part of the first storage tank 210. The valve 214 is arranged in the first circulation pipe P6. The valve 214 closes or opens the first circulation pipe P6. The first pump 218, the first heater 216 and the first filter 215 are arranged in the first circulation pipe P6 in order from the upstream to the downstream of the first circulation pipe P6.

[0068] The piping P7 branches off from the first circulation piping P6 and extends to the second temperature control unit 300. Specifically, the piping P7 branches off from the first circulation piping P6 and extends to the second storage tank 310. The valve 220 is arranged on the piping P7. The valve 220 closes or opens the piping P7. In addition, the piping P10 connects the upstream side and the downstream side of the valve 220 on the piping P7. The flow regulating valve 221 is arranged on the piping P10. The flow regulating valve 221 adjusts the flow rate of the treatment liquid LQ flowing through the piping P10. The valve 223 is arranged on the piping P10 downstream of the flow regulating valve 221. The valve 223 closes or opens the piping P10.

[0069] In the second temperature control unit 300, a pipe P8 extends from the diluent supply source TKB to the second storage tank 310. A valve 320 is disposed on the pipe P8. The valve 320 closes or opens the pipe P8. A second circulation pipe P9 extends from the bottom to the upper part of the second storage tank 310. A second pump 318, a second heater 316, and a second filter 315 are disposed on the second circulation pipe P9 in order from the upstream to the downstream of the second circulation pipe P9.

[0070] The plurality of pipes P3 are respectively arranged corresponding to the plurality of substrate processing units 1. The plurality of pipes P3 are respectively branched from the second circulation pipe P9 and extend to the corresponding substrate processing unit 1. Specifically, the plurality of pipes P3 are respectively branched from the second circulation pipe P9 and extend to the corresponding processing tank 3. The plurality of valves 314 are respectively arranged in the corresponding pipes P3. The valve 314 closes or opens the pipe P3.

[0071] Next, refer to Figure 1 The operation of the first temperature control unit 200 will be described. When the valve 222 opens the pipe P4 , the pipe P4 supplies the processing liquid LQ supplied from the processing liquid supply source TKA to the first storage tank 210 .

[0072] The first storage tank 210 stores the processing liquid LQ supplied from the processing liquid supply source TKA. The first storage tank 210 has an upper opening opened upward and a cover (hereinafter referred to as "cover 240").

[0073] The first circulation pipe P6 introduces the processing liquid LQ sent from the first storage tank 210 back into the first storage tank 210 to circulate the processing liquid LQ. Specifically, the first circulation pipe P6 returns the processing liquid LQ to the first storage tank 210 by introducing the processing liquid LQ sent from the bottom of the first storage tank 210 into the upper opening of the first storage tank 210.

[0074] More specifically, when the valve 214 opens the first circulation pipe P6 and the valve 220 closes the pipe P7, the first pump 218 delivers the treatment liquid LQ sent from the first storage tank 210 through the first circulation pipe P6 toward the upper opening of the first storage tank 210. The first filter 215 filters the treatment liquid LQ flowing through the first circulation pipe P6.

[0075] The first heater 216 adjusts the temperature of the processing liquid LQ. Specifically, the first heater 216 heats the processing liquid LQ supplied to the first storage tank 210 and used to process the substrate W to a temperature above the normal boiling point of the processing liquid LQ. That is, the first heater 216 heats the processing liquid LQ flowing in the first circulation pipe P6 to a temperature above the normal boiling point of the processing liquid LQ. Furthermore, the first temperature control unit 200 supplies the diluent from the diluent supply source TKB to the first storage tank 210 based on the measurement result of the first measuring unit 212 according to the control conditions in the processing tank 3, and at the same time, makes the concentration of the processing liquid LQ reach the target value.

[0076] The standard boiling point of the treatment liquid LQ is the boiling point at the concentration of the treatment liquid LQ resupplied from the treatment liquid supply source TKA to the first storage tank 210 instead of the first circulation pipe P6. Generally speaking, if the concentration of the treatment liquid LQ increases, the boiling point of the treatment liquid LQ will rise. The diluent is, for example, water. The water can be any one of DIW (deionized water), carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water of a diluted concentration (for example, about 10ppm to 100ppm).

[0077] When the treatment liquid LQ is a phosphoric acid aqueous solution, for example, the phosphoric acid concentration of the phosphoric acid aqueous solution resupplied from the treatment liquid supply source TKA to the first storage tank 210 is 85% at room temperature. The boiling point of the phosphoric acid aqueous solution when the phosphoric acid concentration is 85% is 157°C. Therefore, in this case, the standard boiling point of the phosphoric acid aqueous solution is 157°C. In this case, the first heater 216 heats the phosphoric acid aqueous solution flowing in the first circulation pipe P6 to 160°C, which is the standard boiling point of 157°C or higher. Furthermore, the first temperature control unit 200 supplies the diluent from the diluent supply source TKB to the first storage tank 210 based on the measurement result of the first measuring unit 212 according to the control conditions in the treatment tank 3, and at the same time, makes the phosphoric acid concentration of the phosphoric acid aqueous solution reach 89%. In this case, "89%" is the target value of the concentration.

[0078] The first measuring unit 212 measures a physical quantity representing the concentration of the treatment liquid LQ stored in the first storage tank 210. In this specification, the physical quantity representing the concentration of the treatment liquid LQ is a value that is approximately proportional to the concentration of the treatment liquid LQ. For example, the physical quantity representing the concentration of the treatment liquid LQ is the concentration or specific gravity of a specific component in the treatment liquid LQ. Therefore, the first measuring unit 212 is, for example, a concentration meter or a specific gravity meter. In addition, the first measuring unit 212 can also measure a physical quantity representing the concentration of the treatment liquid LQ flowing through the first circulation piping P6. The concentration and temperature of the treatment liquid LQ flowing through the first circulation piping P6 are approximately the same as the concentration and temperature of the treatment liquid LQ stored in the first storage tank 210, respectively.

[0079] For example, in order to make the concentration of the processing liquid LQ reach a target value, the control device U4 may open the valve 224 based on the measurement result of the first measuring unit 212 to supply the diluent from the diluent supply source TKB to the first storage tank 210 .

[0080] After the concentration of the processing liquid LQ stored in the first storage tank 210 reaches the target value, the first storage tank 210 supplies the processing liquid LQ to the second storage tank 310 .

[0081] Specifically, after the concentration of the treatment liquid LQ in the first storage tank 210 reaches the target value, the valve 223 opens the pipe P10, and then the flow rate regulating valve 221 adjusts the flow rate of the treatment liquid LQ, and the treatment liquid LQ is supplied from the first storage tank 210 to the second storage tank 310 through the pipe P10 and the pipe P7, which are on the downstream side of the valve 220. In this case, the valve 214 opens the first circulation pipe P6, and the valve 220 closes the pipe P7. Specifically, after the concentration of the treatment liquid LQ in the first storage tank 210 reaches the target value, the first pump 218 supplies the treatment liquid LQ to the second storage tank 310 through the first circulation pipe P6, the pipe P10, and the pipe P7, which are on the downstream side of the valve 220.

[0082] In this specification, the term “after the concentration of the processing liquid LQ reaches the target value” means “after the physical quantity representing the concentration of the processing liquid LQ reaches the target value”, which means not only “after the concentration value representing the concentration of the processing liquid LQ reaches the target value”, but also, for example, “after the specific gravity value of the processing liquid LQ reaches the target value”.

[0083] Next, refer to Figure 1 The operation of the second temperature control unit 300 will be described. The second storage tank 310 stores the processing liquid LQ supplied from the first storage tank 210. The processing liquid LQ supplied from the first storage tank 210 has a concentration reaching a target value. The second storage tank 310 has an upper opening opened upward and a cover.

[0084] The second circulation pipe P9 introduces the processing liquid LQ sent from the second storage tank 310 back into the second storage tank 310 to circulate the processing liquid LQ. Specifically, the second circulation pipe P9 returns the processing liquid LQ to the second storage tank 310 by introducing the processing liquid LQ sent from the bottom of the second storage tank 310 into the upper opening of the second storage tank 310.

[0085] More specifically, when the valves 314 close the corresponding pipes P3, the second pump 318 delivers the treatment liquid LQ delivered from the second storage tank 310 through the second circulation pipe P9 toward the upper opening of the second storage tank 310. The second filter 315 filters the treatment liquid LQ flowing through the second circulation pipe P9.

[0086] The second heater 316 adjusts the temperature of the treatment liquid LQ. Specifically, the second heater 316 adjusts the temperature of the treatment liquid LQ stored in the second storage tank 310, and indirectly maintains the concentration of the treatment liquid LQ at a target value. That is, the second heater 316 adjusts the temperature of the treatment liquid LQ flowing in the second circulation piping P9, and indirectly maintains the concentration of the treatment liquid LQ at a target value. Specifically, the second heater 316 maintains the temperature of the treatment liquid LQ at a specified temperature above the standard boiling point. Moreover, in a state where the temperature of the treatment liquid LQ is maintained at a specified temperature above the standard boiling point, based on the measurement result of the second measuring unit 312, a diluent is supplied from the diluent supply source TKB to the second storage tank 310 through the valve 320 and the piping P8, thereby maintaining the concentration of the treatment liquid LQ at a target value.

[0087] Since the second heater 316 is a device for maintaining the temperature of the processing liquid LQ at a specified temperature higher than the normal boiling point, the capacitance (power) of the second heater 316 may be smaller than the total capacitance (total power) of the two first heaters 216 of the first temperature control unit 200. For example, the total capacitance of the two first heaters 216 is twice the capacitance of the second heater 316. In other words, the capacitance of each of the two first heaters 216 is substantially the same as the capacitance of the second heater 316.

[0088] The second measuring unit 312 measures a physical quantity indicating the concentration of the treatment liquid LQ stored in the second storage tank 310. For example, the second measuring unit 312 is a concentration meter or a specific gravity meter. In addition, the second measuring unit 312 may also measure a physical quantity indicating the concentration of the treatment liquid LQ flowing through the second circulation pipe P9. The concentration and temperature of the treatment liquid LQ flowing through the second circulation pipe P9 are substantially the same as the concentration and temperature of the treatment liquid LQ stored in the second storage tank 310.

[0089] For example, in order to maintain the concentration of the processing liquid LQ at a target value, the control device U4 may open the valve 320 based on the measurement result of the second measuring unit 312 to supply the diluent from the diluent supply source TKB to the second storage tank 310 .

[0090] The second storage tank 310 supplies the processing liquid LQ to the substrate processing section 1 (specifically, the processing tank 3). That is, the second storage tank 310 replenishes the processing liquid LQ to the substrate processing section 1 (specifically, the processing tank 3).

[0091] Specifically, when the valve 314 opens the pipe P3, the treatment liquid LQ is supplied from the second circulation pipe P9 through the pipe P3 to the treatment tank 3. For example, the treatment liquid LQ can be supplied from the second storage tank 310 to the outer tank 33 of the treatment tank 3, and from the outer tank 33 to the inner tank 31 through the circulation pipe (not shown). For example, the treatment liquid LQ can also be directly supplied from the second storage tank 310 to the inner tank 31.

[0092] The control device U4 can individually control each of the plurality of valves 314. Therefore, the processing liquid LQ can be individually supplied from the second storage tank 310 to each substrate processing unit 1 (specifically, each processing tank 3).

[0093] Next, refer to Figure 2 The first temperature regulation unit 200 will be described. Figure 2 It is a schematic cross-sectional view showing the first storage tank 210 of the first temperature regulation unit 200 . Figure 2 In order to simplify the drawing, the pipes P4 and P5, the first filter 215, the first pump 218, the valve 214, and the first measuring unit 212 are omitted.

[0094] like Figure 2 As shown, the first storage tank 210 includes a tank body 230 and a cover 240. The cover 240 covers the upper opening of the tank body 230. The cover 240 can also open the upper opening of the tank body 230.

[0095] The first temperature control unit 200 further includes a gas supply mechanism 250 , a gas supply unit 280 , and a pipe 261 .

[0096] The gas supply mechanism 250 supplies the gas GA to the gas supply unit 280 through the pipe 261 .

[0097] The gas supply unit 280 supplies the gas GA supplied by the gas supply mechanism 250 to the processing liquid LQ stored in the first storage tank 210. Specifically, the gas supply unit 280 includes at least one gas supply component 281, a first pipe 283, a second pipe 285, a first holding component 287, a second holding component 289, a first fixing component 291, and a second fixing component 293. In Embodiment 1, the gas supply unit 280 includes a plurality of gas supply components 281. In addition, Figure 2 One gas supply component 281 is shown.

[0098] The gas GA is a gas that promotes evaporation of water from the processing liquid LQ heated to a normal boiling point or higher by the first heater 216. The gas GA is, for example, an inert gas. The inert gas is, for example, nitrogen or argon.

[0099] The gas supply member 281 is disposed inside the first storage tank 210. Specifically, the gas supply member 281 is disposed inside the first storage tank 210 at the bottom 230a of the first storage tank 210. The gas supply member 281 is fixed to the bottom 230a of the first storage tank 210. The gas supply member 281 may be in contact with the bottom 230a of the first storage tank 210, or may be separated from the bottom 230a of the first storage tank 210.

[0100] The gas supply component 281 supplies gas GA to the treatment liquid LQ stored in the first storage tank 210 and heated to a normal boiling point or higher. The gas supply component 281 is, for example, a bubbler. Specifically, the gas supply component 281 supplies gas GA to the treatment liquid LQ in an upward direction, that is, toward the liquid surface of the treatment liquid LQ. In this case, the gas supply component 281 supplies the gas GA to the treatment liquid LQ in the form of bubbles BB.

[0101] Specifically, the gas supply member 281 is substantially parallel to the first direction D1. The first direction D1 is substantially parallel to the horizontal direction, for example. The gas supply member 281 is arranged along the bottom 230 a of the first storage tank 210 .

[0102] The gas supply member 281 has a substantially cylindrical shape. The gas supply member 281 is, for example, a tube. The material of the gas supply member 281 is, for example, quartz or resin. The resin is, for example, PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer), PTFE (polytetrafluoroethylene), or PEEK (polyetheretherketone).

[0103] In particular, if the material of the gas supply component 281 is resin, it is easy to process the gas supply component 281. Furthermore, if the material of the gas supply component 281 is PFA, it is easy to bend. For example, the gas supply component 281 can be processed into an L shape. Therefore, the joints between the gas supply component 281 and other pipes can be reduced. As a result, the durability of the gas supply component 281 can be improved.

[0104] Here, Figure 2 For ease of understanding, the figure shows a cross section of the right end portion of the gas supply member 281. The gas supply member 281 has a flow path FW0.

[0105] In addition, the gas supply component 281 has a plurality of gas supply ports G. The gas supply ports G are, for example, holes. The diameter of the gas supply ports G is, for example, tens of μm to hundreds of μm. For example, the diameter of the gas supply ports G is 0.2 mm. For example, the number of gas supply ports G provided on one gas supply component 281 is, for example, 40.

[0106] The gas supply component 281 supplies gas GA from a plurality of gas supply ports G toward the treatment liquid LQ stored in the first storage tank 210 and heated to a normal boiling point or higher. Specifically, the gas supply component 281 supplies gas GA in the form of a plurality of bubbles BB from a plurality of gas supply ports G toward the treatment liquid LQ stored in the first storage tank 210 and heated to a normal boiling point or higher. That is, the gas supply component 281 blows gas GA from a plurality of gas supply ports G toward the treatment liquid LQ stored in the first storage tank 210 and having a temperature of a normal boiling point or higher, thereby generating a plurality of bubbles BB (a large number of bubbles BB) from a plurality of gas supply ports G in the treatment liquid LQ having a temperature of a normal boiling point or higher.

[0107] In addition, as long as the gas supply component 281 can supply the gas GA (specifically, the bubbles BB) to the processing liquid LQ, the composition and raw materials of the gas supply component 281 are not particularly limited. For example, the gas supply component 281 may include a porous component having a substantially cylindrical shape. In addition, for example, the gas supply component 281 may also be configured by fixing a porous component to a component having a substantially cylindrical shape.

[0108] The first temperature control unit 200 further includes an exhaust pipe section 270 . The exhaust pipe section 270 is connected to an upper portion of the first storage tank 210 . Figure 2 In the example of FIG. 2 , the exhaust piping section 270 is connected to the cover 240. The exhaust piping section 270 exhausts water vapor and gas from the first storage tank 210. The gas exhausted from the exhaust piping section 270 is gas GA supplied from the gas supply part 281 to the treatment liquid LQ heated to a standard boiling point or higher and discharged from the liquid surface of the treatment liquid LQ. In addition, the water vapor exhausted from the exhaust piping section 270 is water vapor generated by evaporation of water contained in the treatment liquid LQ heated to a standard boiling point or higher and discharged from the liquid surface of the treatment liquid LQ.

[0109] Specifically, the exhaust piping unit 270 includes a connecting member 271 and an exhaust piping 273. The connecting member 271 connects the first storage tank 210 and the exhaust piping 273. Specifically, one end of the connecting member 271 is connected to the upper portion ( Figure 2 The other end of the connecting member 271 is connected to the exhaust pipe 273. The exhaust pipe 273 has, for example, a substantially cylindrical shape. The exhaust pipe 273 exhausts water vapor and gas from the first storage tank 210. That is, the exhaust pipe 273 exhausts the water vapor and gas flowing from the first storage tank 210 through the connecting member 271 to the outside of the first storage tank 210.

[0110] Above, as reference Figure 1 and Figure 2As described above, according to Embodiment 1, the gas supply part 281 of the first temperature control unit 200 supplies the gas GA that promotes evaporation of water to the processing liquid LQ heated to a normal boiling point or higher by the first heater 216. As a result, the evaporation of water in the processing liquid LQ is promoted. As a result, the concentration of the processing liquid LQ can reach the target value more quickly than when the gas GA is not supplied.

[0111] Furthermore, if the concentration of the processing liquid LQ can be made to reach the target value quickly in the first storage tank 210, the "supply amount per fixed time" of the processing liquid LQ whose concentration reaches the target value can be increased from the first storage tank 210 to the second storage tank 310. Therefore, even when the concentration of the processing liquid LQ stored in the processing tank 3 varies greatly, a large amount of the processing liquid LQ whose concentration reaches the target value can be supplied from the second storage tank 310 to the processing tank 3. As a result, the concentration of the processing liquid LQ can be maintained in the processing tank 3. Thus, the processing of a plurality of substrates W can be made uniform.

[0112] For example, in the case where the semiconductor wafer as the substrate W has a surface pattern for forming a three-dimensional flash memory, the concave portion of the surface pattern is deep, so the etching amount of silicon etched by the phosphoric acid aqueous solution as the processing liquid LQ increases. Therefore, in order to maintain the concentration of the processing liquid LQ in the processing tank 3 constant, a large amount of processing liquid LQ having a concentration reaching a target value must be supplied to the processing tank 3. Therefore, in embodiment 1, the concentration of the processing liquid LQ is quickly brought to a target value by supplying gas GA to the processing liquid LQ heated to a standard boiling point or above to promote the evaporation of water. Therefore, even in the case where the concentration of silicon in the processing liquid LQ stored in the processing tank 3 varies greatly, a large amount of processing liquid LQ having a concentration reaching a target value can be supplied from the first storage tank 210 to the second storage tank 310, and then from the second storage tank 310 to the processing tank 3. As a result, the concentration of the processing liquid LQ can be maintained in the processing tank 3, so that the processing of multiple substrates W can be uniform.

[0113] In addition, in Embodiment 1, since the substrate processing system 100 includes a plurality of substrate processing units 1, a large amount of processing liquid LQ is used. However, in Embodiment 1, since the concentration of the processing liquid LQ can be quickly brought to a target value, even when the substrate processing system 100 includes a plurality of substrate processing units 1, the processing liquid LQ having a concentration reaching a target value can be stably supplied from the second storage tank 310 to the processing tank 3 of each substrate processing unit 1 at a desired flow rate.

[0114] In addition, in Embodiment 1, the gas supply component 281 supplies bubbles BB of the gas GA to the treatment liquid LQ in the first storage tank 210. Therefore, the water in the treatment liquid LQ is transported upward toward the liquid surface through the bubbles BB rising toward the liquid surface of the treatment liquid LQ. As a result, the evaporation of the water in the treatment liquid LQ can be further promoted. In particular, when the treatment liquid LQ is close to a boiling state, the water content of the bubbles BB increases, so that more water is released from the liquid surface, and the evaporation efficiency of the water is improved. As a result, the concentration of the treatment liquid LQ can reach the target value more quickly.

[0115] In particular, the gas supply member 281 is preferably arranged substantially parallel to the first direction D1 (horizontal direction) at the bottom 230a of the first storage tank 210. In this preferred example, compared with the case where the gas supply member 281 is arranged substantially parallel to the vertical direction, the moving distance of the bubbles BB supplied from the plurality of gas supply ports G is longer. As a result, the evaporation of water in the processing liquid LQ can be further promoted, so that the concentration of the processing liquid LQ can reach the target value more quickly.

[0116] In Embodiment 1, in order to make the concentration of the treatment liquid LQ stored in the first storage tank 210 reach the target value, the gas GA is supplied to the treatment liquid LQ and the treatment liquid LQ is heated to a normal boiling point or higher. Therefore, in the first storage tank 210, the gas GA comes out of the treatment liquid LQ and water evaporates from the treatment liquid LQ.

[0117] Moreover, after the concentration of the treatment liquid LQ stored in the first storage tank 210 reaches the target value, the treatment liquid LQ is supplied from the first storage tank 210 to the second storage tank 310. Furthermore, the second heater 316 adjusts the temperature of the treatment liquid LQ stored in the second storage tank 310 so that the concentration of the treatment liquid LQ is maintained at the target value. Therefore, in the second storage tank 310, water basically does not evaporate from the treatment liquid LQ. The reason is that the water in the treatment liquid LQ basically evaporates in the first storage tank 210. In addition, in the second storage tank 310, the gas GA is not supplied to the treatment liquid LQ. As a result, the treatment liquid LQ supplied from the second storage tank 310 to the second circulation pipe P9 contains almost no gas such as water vapor. Thus, the flow rate of the treatment liquid LQ flowing in the second circulation pipe P9 can be properly controlled. Furthermore, the flow rate of the processing liquid LQ supplied from the second circulation pipe P9 and the pipe P3 to the substrate processing section 1 (specifically, the processing tank 3) can be appropriately controlled.

[0118] In addition, in Embodiment 1, the treatment liquid LQ is preferably a "liquid containing phosphoric acid". In this case, the treatment liquid LQ is a liquid used by boiling a specific component (phosphoric acid) to a concentration higher than that at normal temperature or room temperature. Therefore, in the case where the treatment liquid LQ is a "liquid containing phosphoric acid", it is particularly effective to heat the treatment liquid LQ to a standard boiling point or higher and simultaneously supply the gas GA to the treatment liquid LQ so that the concentration of the treatment liquid LQ quickly reaches the target value.

[0119] Furthermore, in Embodiment 1, the processing liquid LQ is supplied to the substrate processing unit 1 (specifically, the processing tank 3) indirectly from the first storage tank 210, that is, via the second storage tank 310. That is, the first storage tank 210 indirectly supplies the processing liquid LQ to the substrate processing unit 1 (specifically, the processing tank 3).

[0120] However, the substrate processing system 100 may not include the second temperature control unit 300. Specifically, the processing liquid LQ may be supplied directly from the first storage tank 210 to the substrate processing part 1 (specifically, the processing tank 3). That is, the first storage tank 210 may also supply the processing liquid LQ directly to the substrate processing part 1 (specifically, the processing tank 3). In this case, the concentration of the processing liquid LQ can also be quickly made to reach the target value in the first storage tank 210. In the case of supplying the processing liquid LQ directly from the first storage tank 210 to the substrate processing part 1, for example, a plurality of pipes P3 are connected to the first circulation pipe P6 of the first temperature control unit 200, and a plurality of valves 314 are respectively arranged on the plurality of pipes P3. In this case, valves 214 and 220 are not provided.

[0121] In addition, in embodiment 1, it is preferred that Figure 2 As shown, the cross-sectional area A of the flow path 275 of the exhaust pipe 273 satisfies the formula (1). In the formula (1), "V" represents the flow rate of the exhaust gas flowing through the flow path 275 of the exhaust pipe 273 when the process of heating the processing liquid LQ to a standard boiling point or above and the process of supplying the gas GA to the processing liquid LQ are not performed. "Q" represents the exhaust amount of water vapor and gas GA from the liquid surface of the processing liquid LQ per unit time.

[0122] A×V≧Q (1)

[0123] When the cross-sectional area A of the flow path 275 of the exhaust pipe 273 satisfies the formula (1), the water vapor and gas discharged from the liquid surface of the processing liquid LQ can be effectively discharged. Therefore, the evaporation of water in the processing liquid LQ is further promoted. As a result, the concentration of the processing liquid LQ can reach the target value more quickly.

[0124] In the formula (1), "V" may represent the flow rate of the exhaust gas flowing through the flow path 275 of the exhaust pipe 273 when performing the process of heating the processing liquid LQ to a normal boiling point or higher and the process of supplying the gas GA to the processing liquid LQ.

[0125] Next, refer to Figure 2 and Figure 3 The gas supply unit 280 will be described. Figure 3 2 is a schematic top view showing the gas supply unit 280. Figure 2 The gas supply unit 280 is shown along Figure 3 The cross section of line II-II.

[0126] like Figure 3 As shown, the multiple gas supply components 281 of the gas supply unit 280 are substantially parallel to each other inside the first storage tank 210, and are arranged at intervals in the second direction D2. The second direction D2 is substantially orthogonal to the first direction D1 and substantially parallel to the horizontal direction. The gas supply component 281 extends along the first direction D1. In each of the multiple gas supply components 281, a plurality of gas supply ports G are arranged at intervals in a substantially straight line in the first direction D1. In each of the multiple gas supply components 281, each gas supply port G is provided on the upper surface portion of the gas supply component 281. Moreover, each gas supply port G supplies gas GA to the processing liquid LQ in an upward direction, that is, toward the liquid surface of the processing liquid LQ. In this case, each gas supply port G supplies gas GA to the processing liquid LQ in the form of bubbles BB.

[0127] In addition, as long as the gas GA (specifically, the bubbles BB) can be supplied to the processing liquid LQ from the gas supply port G, the position of the gas supply port G is not particularly limited. In addition, in each gas supply component 281, the plurality of gas supply ports G may be arranged at equal intervals or at unequal intervals. Furthermore, the posture of the gas supply component 281 is not particularly limited.

[0128] Each of the plurality of gas supply members 281 has a first end 281a and a second end 281b. The first end 281a is one of the two ends of the gas supply member 281 in the first direction D1. The second end 281b is the other of the two ends of the gas supply member 281 in the first direction D1.

[0129] The first pipe 283 is connected to the first end 281a of the plurality of gas supply members 281. The first pipe 283 extends along the second direction D2. Figure 2 ) and the flow path FW0 ( Figure 2) are connected. The first end portion 281a of each gas supply member 281 and the first pipe 283 are held by a first holding member 287. The first holding member 287 has, for example, a substantially rectangular parallelepiped shape. The first holding member 287 extends along the second direction D2.

[0130] The second ends 281b of the plurality of gas supply members 281 are closed. The second ends 281b of the gas supply members 281 are held by the second holding member 289. The second holding member 289 has, for example, a substantially rectangular parallelepiped shape. The second holding member 289 extends in the second direction D2. The second holding member 289 is substantially parallel to the first holding member 287.

[0131] By holding the first end 281a and the second end 281b of the gas supply member 281 by the first holding member 287 and the second holding member 289, deformation of the gas supply member 281 can be suppressed. Figure 2 and Figure 3 As shown, the first holding member 287 is fixed to the bottom 230a of the first storage tank 210 by a plurality of first fixing members 291. In addition, the second holding member 289 is fixed to the bottom 230a of the first storage tank 210 by a plurality of second fixing members 293.

[0132] In addition, the lower end of the second pipe 285 is connected to the first pipe 283. The second pipe 285 extends along the third direction D3. The third direction D3 is substantially orthogonal to the first direction D1 and the second direction D2. The third direction D3 is substantially parallel to the vertical direction. The flow path FW2 of the second pipe 285 is connected to the flow path FW2 of the first pipe 283.

[0133] Next, refer to Figure 2 The gas supply mechanism 250 will be described. The gas supply mechanism 250 supplies the gas GA supplied from the gas supply source 263 from the pipe 261 to each gas supply member 281 through the second pipe 285 and the first pipe 283 .

[0134] Specifically, the gas supply mechanism 250 includes a valve 251, a filter 253, a flow meter 257, and an adjustment valve 259. The valve 251, the filter 253, the flow meter 257, and the adjustment valve 259 are arranged in the pipe 261 in this order from the downstream to the upstream of the pipe 261.

[0135] The regulating valve 259 adjusts the opening of the pipe 261 to adjust the flow rate of the gas GA supplied to each gas supply part 281. The flow meter 257 measures the flow rate of the gas GA flowing through the pipe 261. The regulating valve 259 adjusts the flow rate of the gas based on the measurement result of the flow meter 257. In addition, for example, a mass flow controller may be provided instead of the regulating valve 259 and the flow meter 257.

[0136] The filter 253 removes foreign matter from the gas GA flowing through the pipe 261. The valve 251 opens and closes the pipe 261. That is, the valve 251 switches between supply of the gas GA from the pipe 261 to the gas supply unit 281 and supply stop.

[0137] Next, refer to Figure 1 , Figure 2 and Figure 4 A substrate processing method according to Embodiment 1 of the present invention will be described. Figure 4 1 is a flow chart showing a substrate processing method according to Embodiment 1. Figure 4 As shown, the substrate processing method includes steps S1 to S10. The substrate processing method is performed by the substrate processing system 100. In addition, the substrate processing method is to immerse a plurality of substrates W arranged at intervals in the processing liquid LQ stored in the processing tank 3 of the substrate processing unit 1, and process the plurality of substrates W using the processing liquid LQ. In addition, steps S1 to S8 are equivalent to an example of a "processing liquid temperature control method".

[0138] like Figure 1 , Figure 2 and Figure 4 As shown, in step S1, the first heater 216 of the first temperature control unit 200 starts heating the processing liquid LQ under the control of the control device U4. Specifically, the first heater 216 heats the processing liquid LQ for processing the substrate W to a temperature higher than the normal boiling point of the processing liquid LQ.

[0139] Next, in step S2, the gas supply mechanism 250 is controlled by the control device U4, and each gas supply component 281 starts to supply gas GA (specifically, bubbles BB) to the processing liquid LQ stored in the first storage tank 210. That is, each gas supply component 281 supplies gas GA (specifically, bubbles BB) that promotes evaporation of water from the processing liquid LQ heated to a normal boiling point or higher by the first heater 216 to the processing liquid LQ stored in the first storage tank 210.

[0140] Next, in step S3, the exhaust pipe section 270 exhausts the water vapor and gas GA from the liquid surface of the treatment liquid LQ in the first storage tank 210. That is, the exhaust pipe section 270 exhausts the water vapor and gas GA from the first storage tank 210. In addition, exhaust from the first storage tank 210 by the exhaust pipe section 270 is always continued, and is not limited to the exhaust of the water vapor and gas GA.

[0141] Next, in step S4 , the control device U4 determines whether the concentration of the processing liquid LQ has reached the target value based on the measurement result of the first measuring unit 212 .

[0142] When it is determined in step S4 that the concentration of the processing liquid LQ has not reached the target value, the process repeats step S4 until it is determined that the concentration of the processing liquid LQ has reached the target value.

[0143] On the other hand, when it is determined in step S4 that the concentration of the processing liquid LQ has reached the target value, the process proceeds to step S5.

[0144] In step S5, the control device U4 determines whether the supply timing of the processing liquid LQ from the first storage tank 210 to the second storage tank 310 has arrived. The supply timing of the processing liquid LQ is, for example, when the amount of the processing liquid LQ in the second storage tank 310 becomes less than a specified value.

[0145] When it is determined in step S5 that the supply timing has not arrived, the process repeats step S5 until it is determined that the supply timing has arrived.

[0146] On the other hand, when it is determined in step S5 that the supply timing has arrived, the process proceeds to step S6.

[0147] In step S6, the control device U4 controls the valves 214 and 220, so that the first storage tank 210 supplies the processing liquid LQ to the second storage tank 310. That is, the processing liquid LQ is supplied from the first storage tank 210 to the second storage tank 310.

[0148] Next, in step S7 , the second heater 316 adjusts the temperature of the processing liquid LQ stored in the second storage tank 310 under the control of the control device U4 , thereby indirectly maintaining the concentration of the processing liquid LQ at a target value.

[0149] In step S8, the control device U4 controls the valve 314 to supply the processing liquid LQ from the second storage tank 310 to the substrate processing unit 1 (specifically, the processing tank 3).

[0150] Here, the purpose of supplying the processing liquid LQ from the second storage tank 310 to the processing tank 3 is to suppress the increase in the silicon concentration in the processing liquid LQ stored in the processing tank 3 due to the processing of the substrate W, and to maintain the silicon concentration in the processing tank 3 at a target value. Therefore, for example, without depending on the liquid amount of the processing liquid LQ in the processing tank 3, the processing liquid LQ of the amount required to maintain the silicon concentration at the target value based on past actual results is continuously supplied from the second storage tank 310 to the processing tank 3 to dilute the silicon concentration. In addition, the processing liquid LQ stored in the first storage tank 210 and the second storage tank 310 does not contain silicon.

[0151] In addition, for example, when there is a measuring machine that can continuously measure the silicon concentration in the processing liquid LQ on the production line, based on the measurement results of the measuring machine, when the silicon concentration exceeds the target value and rises, the processing liquid LQ can be supplied from the second storage tank 310 to the processing tank 3, and when the silicon concentration drops to the target value, the supply of the processing liquid LQ can be stopped.

[0152] Next, in step S9, under the control of the control device U4, the transport robot (not shown) transports the substrate W to the substrate holding part (not shown) of the substrate processing part 1, and then the substrate holding part immerses the multiple substrates W in the processing liquid LQ in the processing tank 3, and processes the multiple substrates W using the processing liquid LQ.

[0153] Next, in step S10, under the control of the control device U4, the substrate holding part (not shown) of the substrate processing part 1 pulls out a plurality of substrates W from the processing liquid LQ in the processing tank 3, and then the transport robot (not shown) receives the substrates W from the substrate holding part and transports them. Then, the substrate processing method ends.

[0154] Above, as reference Figure 4 As described above, in the substrate processing method of the first embodiment, the processing liquid LQ stored in the first storage tank 210 is heated to a normal boiling point or higher, and in parallel, a process of supplying the gas GA that promotes evaporation of water to the processing liquid LQ stored in the first storage tank 210 and a process of exhausting water vapor and the gas GA from the first storage tank 210 are performed. Therefore, evaporation of water from the processing liquid LQ can be promoted, so that the concentration of the processing liquid LQ can quickly reach a target value.

[0155] (Implementation Method 2)

[0156] Reference Figure 5 and Figure 6 , a substrate processing system 100A according to Embodiment 2 of the present invention is described. Embodiment 2 is mainly different from Embodiment 1 in that the substrate processing unit 1A of the substrate processing system 100A according to Embodiment 2 is a wafer-by-wafer type that processes substrates W one by one. Hereinafter, the differences between Embodiment 2 and Embodiment 1 are mainly described.

[0157] Figure 5 Schematic diagram of a substrate processing system 100A according to Embodiment 2. Figure 5 As shown, the substrate processing system 100A includes a processing device U1A, which replaces Figure 1 The processing apparatus U1 shown in FIG. 1A includes a plurality of substrate processing units 1A. Each of the plurality of substrate processing units 1A includes a chamber 400 , a nozzle 401 , a spin chuck 402 , a spin motor 403 , and a holder 404 .

[0158] The chamber 400 accommodates a nozzle 401, a rotary chuck 402, a rotary motor 403, and a cup 404. The rotary motor 403 rotates the rotary chuck 402 around the rotation axis. As a result, the rotary chuck 402 rotates the substrate W around the rotation axis while keeping it horizontal. The rotation axis is substantially parallel to the vertical direction. The nozzle 401 sprays the processing liquid LQ supplied from the processing liquid temperature control device U2 onto the rotating substrate W. The cup 404 surrounds the rotary chuck 402 along the circumferential direction relative to the rotation axis. The cup 404 receives the processing liquid LQ scattered from the substrate W and recovers or discharges the processing liquid LQ.

[0159] The processing liquid temperature control device U2 includes a plurality of flow meters 391 corresponding to the plurality of valves 314, and a plurality of flow rate regulating valves 392 corresponding to the plurality of valves 314. The flow meters 391 and the flow rate regulating valves 392 are arranged downstream of the valves 314 in the pipe P3.

[0160] The flow meter 391 detects the flow rate of the processing liquid LQ flowing through the pipe P3 and outputs a detection signal indicating the flow rate. The flow rate regulating valve 392 regulates the flow rate of the processing liquid LQ flowing through the pipe P3. The valve 314 opens or closes the pipe P3 and switches the supply start and stop of the processing liquid LQ to the nozzle 401.

[0161] The substrate processing system 100A of Embodiment 2 is provided with the first temperature control unit 200 similarly to the substrate processing system 100 of Embodiment 1. Therefore, in Embodiment 2, similarly to Embodiment 1, the concentration of the processing liquid LQ in the first storage tank 210 can be quickly brought to the target value. In addition, the substrate processing system 100A of Embodiment 2 is provided with the second temperature control unit 300 similarly to the substrate processing system 100 of Embodiment 1. Therefore, in Embodiment 2, similarly to Embodiment 1, the flow rate of the processing liquid LQ flowing in the second circulation pipe P9 can be appropriately controlled. Furthermore, in Embodiment 2, since the substrate processing system 100A has a plurality of substrate processing units 1A (e.g., 12 to 24), the amount of processing liquid LQ used is relatively large. However, in the second embodiment, similarly to the first embodiment, since the concentration of the processing liquid LQ can be quickly brought to the target value, even when the substrate processing system 100A has a plurality of substrate processing units 1A, the processing liquid LQ having a concentration reaching the target value can be stably supplied from the second storage tank 310 to each substrate processing unit 1A at a desired flow rate. In addition, the substrate processing system 100A of the second embodiment has the same effects as the substrate processing system 100 of the first embodiment.

[0162] In addition, Figure 5 In order to simplify the drawings, the Figure 1The pipes P4, P5, P8, P10, valves 221, 222, 223, 224, 320, the first measuring unit 212 and the second measuring unit 312 are shown.

[0163] Next, refer to Figure 6 A substrate processing method according to a second embodiment of the present invention will be described. Figure 6 is a flow chart showing a substrate processing method according to Embodiment 2. Figure 6 As shown, the substrate processing method includes steps S21 to S31. The substrate processing method is performed by the substrate processing system 100A. The substrate processing method sprays the processing liquid LQ onto the rotating substrate W to process the substrate W. In addition, steps S21 to S29 correspond to an example of a "processing liquid temperature control method".

[0164] like Figure 6 As shown, the processing of steps S21 to S27 is the same as Figure 4 The processes in steps S1 to S7 are the same, and the description thereof is omitted.

[0165] Next, in step S28, the control device U4 determines whether the supply timing of the processing liquid LQ to any substrate processing unit 1A (specifically, the nozzle 401) has arrived. The supply timing of the processing liquid LQ is, for example, the timing of the processing liquid LQ being ejected from the nozzle 401 to the substrate W.

[0166] When it is determined in step S28 that the supply timing has not arrived, the process repeats step S28 until it is determined that the supply timing has arrived.

[0167] On the other hand, when it is determined in step S28 that the supply timing has arrived, the process proceeds to step S29.

[0168] In step S29, the control unit U4 controls the valve 314 to supply the processing liquid LQ from the second storage tank 310 to the substrate processing unit 1A (specifically, the nozzle 401). That is, the processing liquid LQ is supplied from the second storage tank 310 to the substrate processing unit 1A (specifically, the nozzle 401).

[0169] Next, in step S30 , the nozzle 401 of the substrate processing unit 1 discharges the processing liquid LQ toward the rotating substrate W, and the substrate W is processed by the processing liquid LQ.

[0170] Specifically, the substrate W transported by a transport robot (not shown) is held by the spin chuck 402 before the nozzle 401 discharges the processing liquid LQ onto the substrate W. Then, the nozzle 40 discharges the processing liquid LQ onto the substrate W held and rotated by the spin chuck 402 .

[0171] Next, in step S31, under the control of the control unit U4, a transfer robot (not shown) carries out the substrate W from the chamber 400 of the substrate processing unit 1A. Then, the substrate processing method ends.

[0172] Above, as reference Figure 6 As described above, in the substrate processing method of the second embodiment, the processing liquid LQ stored in the first storage tank 210 is heated to a normal boiling point or higher, and in parallel, a process of supplying the gas GA that promotes evaporation of water to the processing liquid LQ stored in the first storage tank 210 and a process of exhausting the water vapor and the gas GA from the first storage tank 210 are performed. Therefore, the evaporation of water from the processing liquid LQ can be promoted, so that the concentration of the processing liquid LQ can quickly reach the target value.

[0173] (Implementation 3)

[0174] Reference Figure 7 to Figure 10 A substrate processing system 100B according to Embodiment 3 of the present invention will be described. Embodiment 3 is mainly different from Embodiment 1 in that the substrate processing system 100B according to Embodiment 3 heats the processing liquid LQ to a temperature above the normal boiling point in the processing tank 110. The following mainly describes the differences between Embodiment 3 and Embodiment 1.

[0175] First, refer to Figure 7 The substrate processing system 100B will be described. Figure 7 1 is a schematic cross-sectional view showing a substrate processing system 100B according to Embodiment 3. The substrate processing system 100B is a batch type system, and processes a plurality of substrates W at once using a processing liquid LQ. The substrate processing system 100B corresponds to an example of a "processing liquid temperature control device".

[0176] like Figure 7 As shown, the substrate processing system 100B includes a processing tank 110, a substrate holding part 120, a plurality of circulating processing liquid supply parts 130, a circulation part 140, a processing liquid supply part 150, a dilution liquid supply part 160, a liquid discharge part 170, a gas supply mechanism 250, an exhaust pipe part 270, a gas supply unit 280A and a control device U4. In Embodiment 3, the processing tank 110 corresponds to the "substrate processing part".

[0177] The processing tank 110 stores the processing liquid LQ. The processing tank 110 immerses a plurality of substrates W in the processing liquid LQ to process the plurality of substrates W. The processing tank 110 is an example of a “first storage tank”.

[0178] The substrate holding part 120 holds a plurality of substrates W. The substrate holding part 120 includes a lifter. The substrate holding part 120 immerses a plurality of substrates W arranged at intervals in the processing liquid LQ stored in the processing tank 110. A plurality of circulating processing liquid supply parts 130 supply the processing liquid LQ to the processing tank 110. The circulation part 140 circulates the processing liquid LQ stored in the processing tank 110 and supplies the processing liquid LQ to each circulating processing liquid supply part 130. The processing liquid supply part 150 supplies the processing liquid LQ to the processing tank 110. The diluent supply part 160 supplies the diluent to the processing tank 110. The drain part 170 drains the processing liquid LQ from the processing tank 110. The diluent is, for example, water. Other than this, the diluent is the same as the diluent of Embodiment 1.

[0179] The gas supply unit 280A supplies the gas GA supplied from the gas supply mechanism 250 to the processing liquid LQ in the processing tank 110. Specifically, the gas supply unit 280A supplies bubbles BB of the gas GA to the processing liquid LQ in the processing tank 110. The gas GA is, for example, an inert gas. The gas GA is, for example, a gas that promotes evaporation of water from the processing liquid LQ heated to a normal boiling point or higher. Other than this, the gas GA is the same as the gas GA of the first embodiment.

[0180] The gas supply mechanism 250 supplies the gas GA to the gas supply unit 280A. The exhaust pipe section 270 exhausts water vapor and the gas GA from the processing tank 110. The control device U4 controls each component of the substrate processing system 100B. For example, the control device U4 controls the substrate holding section 120, the circulation section 140, the processing liquid supply section 150, the diluent supply section 160, the liquid discharge section 170, and the gas supply mechanism 250.

[0181] Specifically, the processing tank 110 has a double tank structure including an inner tank 112 and an outer tank 114. The inner tank 112 and the outer tank 114 each have an upper opening that opens upward. The inner tank 112 is configured to store the processing liquid LQ and can accommodate a plurality of substrates W. The outer tank 114 is disposed on the outer side of the upper opening of the inner tank 112. The height of the upper edge of the outer tank 114 is higher than the height of the upper edge of the inner tank 112.

[0182] The processing tank 110 further includes a cover 116. The cover 116 can be opened and closed relative to the upper opening of the inner tank 112. By closing the cover 116, the cover 116 can cover the upper opening of the inner tank 112.

[0183] The cover 116 includes a split door portion 116a and a split door portion 116b. The split door portion 116a is located at one side of the upper opening of the inner tank 112. The split door portion 116a is disposed near the upper edge of the inner tank 112 and can be opened and closed relative to the upper opening of the inner tank 112. The split door portion 116b is located at the other side of the upper opening of the inner tank 112. The split door portion 116b is disposed near the upper edge of the inner tank 112 and can be opened and closed relative to the upper opening of the inner tank 112. By closing the split door portions 116a and 116b to cover the upper opening of the inner tank 112, the inner tank 112 of the processing tank 110 can be covered.

[0184] The substrate holding portion 120 moves vertically upward or vertically downward while holding a plurality of substrates W. As the substrate holding portion 120 moves vertically downward, the plurality of substrates W held by the substrate holding portion 120 are immersed in the processing liquid LQ stored in the inner tank 112 .

[0185] The substrate holding portion 120 includes a main body plate 122 and holding rods 124. The main body plate 122 is a plate extending in the vertical direction (Z direction). The holding rods 124 extend from one main surface of the main body plate 122 in the horizontal direction (Y direction). Figure 7 In the example of FIG. 1 , three holding rods 124 extend horizontally from one main surface of the main body plate 122. A plurality of substrates W are arranged at intervals and are held in an upright posture (vertical posture) by the plurality of holding rods 124 abutting against the lower edges of the substrates W.

[0186] The substrate holding portion 120 may further include a lifting unit 126. The lifting unit 126 enables the main plate 122 to be positioned at the processing position ( Figure 8 (b)) and the retreat position ( Figure 8 The main body plate 122 is moved to the processing position by the lifting unit 126, and the plurality of substrates W held by the holding rods 124 are immersed in the processing liquid LQ. Thus, the plurality of substrates W are processed.

[0187] The plurality of circulating treatment liquid supply components 130 supply the treatment liquid LQ to the inner tank 112 of the treatment tank 110. The plurality of circulating treatment liquid supply components 130 are arranged at the bottom 110a of the inner tank 112 inside the inner tank 112 of the treatment tank 110. The plurality of circulating treatment liquid supply components 130 each have a substantially cylindrical shape. The plurality of circulating treatment liquid supply components 130 are, for example, tubes.

[0188] Specifically, each of the plurality of circulating process liquid supply members 130 has a plurality of process liquid discharge ports P. Figure 7In FIG. 1 , only one treatment liquid outlet P is shown for one circulating treatment liquid supply member 130. Each of the plurality of circulating treatment liquid supply members 130 supplies the treatment liquid LQ to the inner tank 112 from the plurality of treatment liquid outlets P. Figure 7 In the embodiment, the processing liquid ejection port P is directed obliquely upward, but the present invention is not limited thereto. The processing liquid ejection port P may also be directed downward or sideways.

[0189] The circulation unit 140 includes a pipe 141, a pump 142, a heater 143, a filter 144, an adjustment valve 145, a valve 146, and a measuring unit 147. The pump 142, the heater 143, the filter 144, the adjustment valve 145, and the valve 146 are arranged in order from the upstream to the downstream of the pipe 141. The heater 143 corresponds to an example of a "first temperature adjustment unit".

[0190] The pipe 141 introduces the treatment liquid LQ sent from the treatment tank 110 back into the treatment tank 110. Specifically, the upstream end of the pipe 141 is connected to the outer tank 114. Therefore, the pipe 141 introduces the treatment liquid LQ from the outer tank 114 to the circulating treatment liquid supply part 130. A plurality of circulating treatment liquid supply parts 130 are connected to the downstream end of the pipe 141.

[0191] The pump 142 delivers the treatment liquid LQ from the pipe 141 to the plurality of circulating treatment liquid supply units 130. Therefore, the circulating treatment liquid supply unit 130 supplies the treatment liquid LQ supplied from the pipe 141 to the treatment tank 110. The filter 144 filters the treatment liquid LQ flowing through the pipe 141.

[0192] The heater 143 increases the temperature of the processing liquid LQ flowing through the pipe 141. That is, the heater 143 adjusts the temperature of the processing liquid LQ.

[0193] Specifically, the heater 143 maintains the temperature of the processing liquid LQ at a specified temperature (hereinafter, “specified temperature TM”) lower than the normal boiling point of the processing liquid LQ while the substrate W is immersed in the processing liquid LQ to process the substrate W. The specified temperature TM may have a fixed range.

[0194] When the concentration of the processing liquid LQ is to reach a target value while the substrate W is not immersed in the processing liquid LQ, the heater 143 increases the temperature of the processing liquid LQ to a level equal to or higher than the normal boiling point of the processing liquid LQ.

[0195] Specifically, the heater 143 heats the processing liquid LQ supplied to the processing tank 110 and used to process the substrate W to a value higher than the normal boiling point of the processing liquid LQ when the substrate W is not immersed in the processing liquid LQ. That is, the heater 143 heats the processing liquid LQ flowing in the pipe 141 to a value higher than the normal boiling point of the processing liquid LQ when the substrate W is not immersed in the processing liquid LQ. Furthermore, the substrate processing system 100B replenishes the diluent from the diluent supply source TKB to the processing tank 110 according to the control conditions in the processing tank 110, and at the same time, makes the concentration of the processing liquid LQ reach the target value.

[0196] The standard boiling point of the processing liquid LQ is a boiling point at the concentration of the processing liquid LQ resupplied from the processing liquid supply source TKA instead of the pipe 141 to the processing tank 110 .

[0197] Except for this, while the substrate W is not immersed in the processing liquid LQ, the heater 143 operates in the same manner as the first heater 216 of the first embodiment.

[0198] The regulating valve 145 adjusts the opening of the pipe 141 to adjust the flow rate of the processing liquid LQ supplied to the plurality of circulating processing liquid supply units 130. The valve 146 opens and closes the pipe 141.

[0199] The measuring unit 147 measures the physical quantity representing the concentration of the treatment liquid LQ flowing through the pipe 141. The definition of the physical quantity representing the concentration of the treatment liquid LQ is the same as that in the case of the first embodiment. Therefore, the measuring unit 147 is a concentration meter or a specific gravity meter. In addition, the measuring unit 147 can also measure the physical quantity representing the concentration of the treatment liquid LQ stored in the treatment tank 110 (the inner tank 112 or the outer tank 114). The concentration and temperature of the treatment liquid LQ flowing through the pipe 141 are substantially the same as the concentration and temperature of the treatment liquid LQ stored in the treatment tank 110.

[0200] The processing liquid supply unit 150 includes a nozzle 152, a pipe 154, and a valve 156. The nozzle 152 sprays the processing liquid LQ to the outer tank 114. The nozzle 152 is connected to the pipe 154. The processing liquid LQ is supplied from the processing liquid supply source TKA to the pipe 154. The valve 156 is arranged on the pipe 154.

[0201] When the valve 156 is opened, the processing liquid LQ ejected from the nozzle 152 is supplied to the outer tank 114. Then, the processing liquid LQ is supplied from the outer tank 114 to the inner tank 112 by the circulating processing liquid supply unit 130 through the pipe 141.

[0202] The diluent supply unit 160 includes a nozzle 162, a pipe 164, and a valve 166. The nozzle 162 sprays the diluent into the outer tank 114. The nozzle 162 is connected to the pipe 164. The diluent from the diluent supply source TKB is supplied to the pipe 164. The valve 166 is disposed on the pipe 164. When the valve 166 is opened, the diluent sprayed from the nozzle 162 is supplied into the outer tank 114.

[0203] For example, in order to make the concentration of the processing liquid LQ reach a target value, the control device U4 may open the valve 166 based on the measurement result of the measuring unit 147 to supply the diluent from the diluent supply source TKB to the processing tank 110 .

[0204] The drain section 170 includes a drain pipe 170a and a valve 170b. The drain pipe 170a is connected to the bottom wall of the inner tank 112 of the treatment tank 110. The valve 170b is arranged on the drain pipe 170a. By opening the valve 170b, the treatment liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170a. The discharged treatment liquid LQ is transported to a drainage treatment device (not shown) for treatment.

[0205] The gas supply unit 280A is disposed inside the processing tank 110. Specifically, the gas supply unit 280A includes at least one gas supply member 180 and at least one support member 185. In the third embodiment, the gas supply unit 280A includes a plurality of gas supply members 180 and a plurality of support members 185.

[0206] A plurality of gas supply components 180 and a plurality of support components 185 are disposed inside the processing tank 110. Specifically, the plurality of gas supply components 180 are disposed inside the processing tank 110 at the bottom 110a of the processing tank 110. Specifically, the plurality of gas supply components 180 are disposed in the inner tank 112 of the processing tank 110. Specifically, the plurality of gas supply components 180 are disposed inside the inner tank 112 at the bottom 110a of the inner tank 112.

[0207] The plurality of gas supply members 180 are each supported by a corresponding support member 185. Specifically, the plurality of gas supply members 180 are each fixed by a corresponding support member 185. Therefore, deformation of the gas supply member 180 can be suppressed. The plurality of support members 185 are fixed to the bottom 110a of the processing tank 110. Specifically, the plurality of support members 185 are fixed to the bottom 110a of the inner tank 112.

[0208] Each of the plurality of gas supply components 180 has a substantially cylindrical shape. Each of the gas supply components 180 is, for example, a tube. The material of the gas supply component 180 is, for example, quartz or resin. Each of the plurality of gas supply components 180 has a flow path FW0.

[0209] The gas supply mechanism 250 supplies the gas GA supplied from the gas supply source 263 to each gas supply unit 180 through the pipe 261. The configuration of the gas supply mechanism 250 is the same as that of the gas supply mechanism 250 of the first embodiment except for this point.

[0210] Furthermore, the gas supply component 180 supplies the gas GA to the treatment liquid LQ stored in the treatment tank 110 (specifically, the inner tank 112). Specifically, the gas supply component 180 supplies the gas GA to the treatment liquid LQ upward, that is, toward the liquid surface of the treatment liquid LQ. In this case, the gas supply component 180 supplies the gas GA to the treatment liquid LQ in the form of bubbles BB. The gas supply component 180 is, for example, a bubbler.

[0211] Specifically, while the substrate W is immersed in the processing liquid LQ to be processed, the gas supply unit 180 supplies gas to the processing liquid LQ stored in the processing tank 110 and at a predetermined temperature TM lower than the normal boiling point.

[0212] When the concentration of the processing liquid LQ is to reach a target value while the substrate W is not immersed in the processing liquid LQ, the gas supply unit 180 supplies the gas GA to the processing liquid LQ stored in the processing tank 110 and heated to a normal boiling point or higher.

[0213] In addition, each of the plurality of gas supply members 180 further includes a plurality of gas supply ports G. Figure 7 In FIG. 1 , only one gas supply port G is shown for one gas supply member 180 . Specifically, each of the plurality of gas supply members 180 has a substantially cylindrical protrusion 182 . The gas supply port G is provided on the protrusion 182 .

[0214] While the substrate W is being processed by being immersed in the processing liquid LQ, the gas supply component 180 supplies gas GA from a plurality of gas supply ports G toward the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112 ) and maintained at a specified temperature TM lower than the normal boiling point.

[0215] Furthermore, when the concentration of the processing liquid LQ is to reach a target value while the substrate W is not immersed in the processing liquid LQ, the gas supply part 180 supplies the gas GA from the plurality of gas supply ports G toward the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112) and heated to a normal boiling point or higher. Specifically, in this case, the gas supply part 180 supplies the gas GA in the form of a plurality of bubbles BB from the plurality of gas supply ports G toward the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112) and heated to a normal boiling point or higher.

[0216] Except for this, the configuration and operation of the gas supply member 180 and the gas supply port G are the same as the configuration and operation of the gas supply member 281 and the gas supply port G in the first embodiment.

[0217] The exhaust pipe section 270 is connected to the upper portion of the processing tank 110 . Figure 7 In the example of FIG. 1 , the exhaust pipe section 270 is connected to the cover 116. The exhaust pipe section 270 exhausts gas from the processing tank 110 while the substrate W is immersed in the processing liquid LQ and processed.

[0218] In addition, when the substrate W is not immersed in the processing liquid LQ, the exhaust piping unit 270 discharges water vapor and gas from the processing tank 110 (specifically, the inner tank 112) when the concentration of the processing liquid LQ reaches the target value. The exhausted gas is the gas GA supplied from the gas supply component 180 to the processing liquid LQ and discharged from the liquid surface of the processing liquid LQ. In addition, the exhausted water vapor is the water vapor generated by evaporation of the water contained in the processing liquid LQ heated to a standard boiling point or above and discharged from the liquid surface of the processing liquid LQ. The exhaust piping unit 270 includes a connecting component 271 and an exhaust piping 273. In addition, the structure of the exhaust piping unit 270 is the same as that of the exhaust piping unit 270 of the first embodiment.

[0219] The control device U4 controls the lifting unit 126 , the valve 146 , the adjustment valve 145 , the heater 143 , the pump 142 , the valve 156 , the valve 166 , the valve 170 b , and the gas supply mechanism 250 .

[0220] Above, as reference Figure 7 As described above, according to the third embodiment, during the period when the substrate W is not immersed in the processing liquid LQ, the gas supply unit 180 supplies the gas GA that promotes evaporation of water to the processing liquid LQ heated to a normal boiling point or higher by the heater 143. As a result, the evaporation of water in the processing liquid LQ is promoted. As a result, the concentration of the processing liquid LQ in the processing tank 110 can reach the target value more quickly than when the gas GA is not supplied.

[0221] In the third embodiment, while the substrate W is not immersed in the processing liquid LQ, the gas supply unit 180 supplies bubbles BB of the gas GA to the processing liquid LQ in the processing tank 110. Therefore, as in the first embodiment, the bubbles BB rising toward the liquid surface of the processing liquid LQ can further promote evaporation of water in the processing liquid LQ. In addition, the third embodiment has the same effects as the first embodiment.

[0222] In the third embodiment, the processing liquid LQ is preferably a "liquid containing phosphoric acid." This point is the same as the first embodiment.

[0223] In particular, in Embodiment 3, it is preferred that the heater 143 heats the processing liquid LQ to a normal boiling point or higher after a part or all of the processing liquid LQ stored in the processing tank 110 is discharged and a part or all of the processing liquid LQ is replaced with a new processing liquid LQ while the substrate W is not immersed in the processing liquid LQ. The new processing liquid LQ is different from the processing liquid supplied from the processing liquid supply source TKA and supplied from the pipe 141. In addition, it is preferred that each gas supply component 180 supplies gas to the processing liquid LQ stored in the processing tank 110 after a part or all of the processing liquid LQ stored in the processing tank 110 is discharged and a part or all of the processing liquid LQ is replaced with a new processing liquid LQ while the substrate W is not immersed in the processing liquid LQ.

[0224] In these preferred examples, after part or all of the processing liquid LQ stored in the processing tank 110 is discharged and part or all of the processing liquid LQ is replaced with new processing liquid LQ, the concentration of the processing liquid LQ can quickly reach the target value. As a result, the operation rate of the substrate processing system 100B can be improved.

[0225] For example, when the concentration of a specific component (eg, silicon) in the processing liquid LQ in the processing tank 110 is reduced, part of the processing liquid LQ stored in the processing tank 110 is discharged and part of the processing liquid LQ is replaced with new processing liquid LQ.

[0226] For example, when the processing tank 110 is cleaned, all of the processing liquid LQ stored in the processing tank 110 is discharged, and all of the processing liquid LQ is replaced with new processing liquid LQ.

[0227] In addition, in Embodiment 3, while the substrate W is immersed in the processing liquid LQ to process the substrate W, each gas supply part 180 blows gas GA from a plurality of gas supply ports G into the processing liquid LQ, and supplies a plurality of bubbles BB from the plurality of gas supply ports G toward the plurality of substrates W immersed in the processing liquid LQ. Therefore, the processing liquid LQ in contact with the surface of each substrate W can be effectively replaced with fresh processing liquid LQ by a large number of bubbles BB. As a result, when a surface pattern including a concave portion is formed on the surface of the substrate W, the processing liquid LQ in the concave portion can be effectively replaced with fresh processing liquid LQ by a diffusion phenomenon. Thus, the wall surface in the concave portion of the surface pattern can be effectively processed from a shallow position to a deep position using the processing liquid LQ.

[0228] Next, refer to Figure 8 The substrate processing system 100B before and after the substrate W is immersed in the processing tank 110 will be described. Figure 8 (a) and Figure 8 (b) is a schematic perspective view of the substrate processing system 100B before and after the substrate W is placed in the processing tank 110. Figure 8 In order to avoid over-complexity in the drawings, Figure 7 The cover 116 and the processing liquid LQ in the processing tank 110 are omitted and shown.

[0229] like Figure 8 As shown in (a), the substrate holding portion 120 holds a plurality of substrates W. The plurality of substrates W are arranged in a row along the first direction D10 (Y direction). In other words, the first direction D10 indicates the arrangement direction of the plurality of substrates W. The first direction D10 is substantially parallel to the horizontal direction. In addition, each of the plurality of substrates W is substantially parallel to the second direction D20. The second direction D20 is substantially orthogonal to the first direction D10 and substantially parallel to the horizontal direction.

[0230] Figure 8 In (a), the substrate holding unit 120 is located above the inner tank 112 of the processing tank 110. The substrate holding unit 120 holds a plurality of substrates W and descends vertically downward (in the Z direction). Thus, the plurality of substrates W are placed in the processing tank 110.

[0231] like Figure 8 As shown in (b), when the substrate holding unit 120 is lowered into the processing tank 110, the plurality of substrates W are immersed in the processing liquid LQ in the processing tank 110. Figure 8 Although not shown in (b), Figure 7 As shown, the upper opening of the inner tank 112 is covered by a cover 116 .

[0232] Next, refer to Fig. 9 The gas supply unit 280A will be described. Fig. 9 2 is a schematic top view showing the gas supply unit 280A. Fig. 9 As shown, the gas supply components 180 and the circulating treatment liquid supply components 130 of the gas supply unit 280A are substantially parallel to each other in a plan view and are arranged at intervals. In a plan view, one of the two circulating treatment liquid supply components 130 is arranged between the two gas supply components 180. In addition, in a plan view, the other of the two circulating treatment liquid supply components 130 is arranged between the other two gas supply components 180. Furthermore, in a plan view, the middle two gas supply components 180 of the four gas supply components 180 face each other in the second direction D20.

[0233] Specifically, the plurality of circulating treatment liquid supply components 130 are substantially parallel to each other in the treatment tank 110 (specifically, the inner tank 112), and are arranged at intervals in the second direction D20. The circulating treatment liquid supply components 130 extend along the first direction D10. In each of the plurality of circulating treatment liquid supply components 130, the plurality of treatment liquid ejection ports P are arranged at intervals in a substantially straight line in the first direction D10.

[0234] A plurality of gas supply components 180 are substantially parallel to each other in the processing tank 110 (specifically, the inner tank 112), and are arranged at intervals in the second direction D20. The gas supply component 180 extends along the first direction D10. In each of the plurality of gas supply components 180, a plurality of gas supply ports G are arranged at intervals in a substantially straight line in the first direction D10. In each of the plurality of gas supply components 180, each gas supply port G is provided on the upper surface portion of the gas supply component 180. Moreover, each gas supply port G supplies bubbles BB upward at the bottom 110a of the processing tank 110 (specifically, the inner tank 112). In addition, as long as bubbles BB can be supplied from the gas supply port G, the position of the gas supply port G is not particularly limited. In addition, in the plurality of gas supply components 180, the plurality of gas supply ports G may be arranged at equal intervals or at unequal intervals.

[0235] Each of the plurality of gas supply members 180 has a first end 180a and a second end 180b. The first end 180a is one of the two ends of the gas supply member 180 in the first direction D10. The second end 180b is the other of the two ends of the gas supply member 180 in the first direction D10.

[0236] The first end 180a is connected to the pipe 261. Therefore, the gas supply mechanism 250 supplies the gas GA supplied by the gas supply source 263 from the pipe 261 to each gas supply component 180. The second end 180b is closed. Other than this, the configuration of the gas supply component 180 is the same as that of the gas supply component 281 of the first embodiment.

[0237] The plurality of support members 185 are substantially parallel to each other in the processing tank 110 (specifically, the inner tank 112) and are arranged at intervals in the second direction D20. The support members 185 extend along the first direction D10. Fig. 9 The supporting member 185 located at one end of the gas supply unit 280A in the second direction D20 supports one gas supply member 180 , and the supporting member 185 located at the other end supports one gas supply member 180 . The supporting member 185 in the middle supports two gas supply members 180 .

[0238] Next, refer to Figure 8 and Fig.10 A substrate processing method according to a third embodiment of the present invention will be described. Fig.10 is a flow chart showing a substrate processing method according to Embodiment 31. Fig.10As shown, the substrate processing method includes steps S41 to S51. The substrate processing method is performed by the substrate processing system 100B. In addition, the substrate processing method immerses a plurality of substrates W arranged at intervals in the processing liquid LQ stored in the processing tank 110, and processes the plurality of substrates W using the processing liquid LQ. In addition, steps S41 to S47 are equivalent to an example of a "processing liquid temperature control method".

[0239] like Figure 8 and Fig.10 As shown, in step S41, the control device U4 determines whether the temperature adjustment time point has arrived. The temperature adjustment time point is the time point after part or all of the processing liquid LQ stored in the processing tank 110 is discharged and part or all of the processing liquid LQ is replaced with new processing liquid LQ while the substrate W is not immersed in the processing liquid LQ.

[0240] When it is determined in step S41 that the temperature adjustment timing has not arrived, the process repeats step S41 until it is determined that the temperature adjustment timing has arrived.

[0241] On the other hand, when it is determined in step S41 that the temperature adjustment time has arrived, the process proceeds to step S42.

[0242] In step S42, the heater 143 starts heating the processing liquid LQ under the control of the control unit U4. Specifically, the heater 143 heats the processing liquid LQ for processing the substrate W to a temperature equal to or higher than the normal boiling point of the processing liquid LQ.

[0243] Next, in step S43, the gas supply mechanism 250 is controlled by the control device U4, and each gas supply component 180 starts to supply gas GA (specifically, bubbles BB) to the processing liquid LQ stored in the processing tank 110. That is, each gas supply component 180 supplies gas GA (specifically, bubbles BB) that promotes evaporation of water from the processing liquid LQ heated to a normal boiling point or higher to the processing liquid LQ stored in the processing tank 110.

[0244] Next, in step S44, the exhaust piping unit 270 exhausts the water vapor and gas GA from the liquid surface of the treatment liquid LQ in the treatment tank 110. That is, the exhaust piping unit 270 exhausts the water vapor and gas GA from the treatment tank 110. In addition, exhaust from the treatment tank 110 by the exhaust piping unit 270 is always continued, and is not limited to the exhaust of the water vapor and gas GA.

[0245] Next, in step S45 , the control device U4 determines whether the concentration of the processing liquid LQ has reached the target value based on the measurement result of the measuring unit 147 .

[0246] When it is determined in step S45 that the concentration of the processing liquid LQ has not reached the target value, the process repeats step S45 until it is determined that the concentration of the processing liquid LQ has reached the target value.

[0247] On the other hand, when it is determined in step S45 that the concentration of the processing liquid LQ has reached the target value, the process proceeds to step S46.

[0248] In step S46, the heater 143 adjusts the temperature of the treatment liquid LQ stored in the treatment tank 110 through the control of the control device U4, and indirectly maintains the concentration of the treatment liquid LQ at the target value. That is, the heater 143 adjusts the temperature of the treatment liquid LQ flowing in the piping 141, and indirectly maintains the concentration of the treatment liquid LQ at the target value. Specifically, the heater 143 maintains the temperature of the treatment liquid LQ at a specified temperature above the standard boiling point. Moreover, in a state where the temperature of the treatment liquid LQ is maintained at a specified temperature above the standard boiling point, based on the measurement result of the measuring unit 147, a diluent is supplied from the diluent supply source TKB to the treatment tank 110 through the valve 166, the piping 164 and the nozzle 162, thereby maintaining the concentration of the treatment liquid LQ at the target value.

[0249] Next, in step S47 , the gas supply mechanism 250 is controlled by the control device U4 , so that each gas supply unit 180 stops supplying the gas GA (specifically, the bubbles BB) to the processing liquid LQ stored in the processing tank 110 .

[0250] Next, in step S48, the control device U4 determines whether the substrate immersion timing has arrived in any of the plurality of processing tanks 110. The substrate immersion timing is the timing at which the substrate W is immersed in the processing liquid LQ.

[0251] When it is determined in step S48 that the substrate immersion timing has not arrived, the process repeats step S48 until it is determined that the substrate immersion timing has arrived.

[0252] On the other hand, when it is determined in step S48 that the substrate immersion time point has arrived, the process proceeds to step S49.

[0253] In step S49, under the control of the control device U4, the transfer robot (not shown) transfers the substrate W to the substrate holding part 120, and then the substrate holding part 120 immerses the plurality of substrates W in the processing liquid LQ in the processing tank 110 to process the plurality of substrates W using the processing liquid LQ.

[0254] Next, in step S50 , the gas supply mechanism 250 is controlled by the control unit U4 , so that each gas supply part 180 supplies the gas GA (specifically, bubbles BB) to the plurality of substrates W immersed in the processing liquid LQ in the processing tank 110 .

[0255] Next, in step S51, under the control of the control device U4, the substrate holder 120 pulls out a plurality of substrates W from the processing liquid LQ in the processing tank 110, and a transfer robot (not shown) receives and transfers the substrates W from the substrate holder 120. Then, the substrate processing method ends.

[0256] Above, as reference Fig.10 As described above, in the substrate processing method of the third embodiment, the processing liquid LQ stored in the processing tank 110 is heated to a normal boiling point or higher, and in parallel, a process of supplying the gas GA that promotes evaporation of water to the processing liquid LQ stored in the processing tank 110 and a process of exhausting water vapor and the gas GA from the processing tank 110 are performed. Therefore, the evaporation of water from the processing liquid LQ can be promoted, and the concentration of the processing liquid LQ can quickly reach the target value.

[0257] Next, the present invention will be specifically described based on examples, but the present invention is not limited to the following examples.

[0258] [Example]

[0259] Reference Figure 7 and Fig.11 The following describes Example 1, Example 2 and Comparative Example of the present invention. Figure 7 In the comparative example, the substrate processing system 100B is described. Figure 7 The substrate processing system 100B is described for use with limitations.

[0260] In Example 1, Example 2 and the comparative example, the treatment liquid LQ is heated to a normal boiling point or higher by the heater 143. The treatment liquid LQ is a phosphoric acid aqueous solution. The lid 116 of the treatment tank 110 is closed.

[0261] In Example 1, the flow rate of the gas GA supplied from the gas supply mechanism 250 to the four gas supply parts 180, that is, the flow rate of the gas GA supplied to the processing liquid LQ heated to a temperature higher than the normal boiling point, is 13 liters / minute. The gas GA is nitrogen gas.

[0262] In Example 2, the flow rate of the gas GA supplied from the gas supply mechanism 250 to the four gas supply parts 180, that is, the flow rate of the gas GA supplied to the processing liquid LQ heated to a temperature higher than the normal boiling point, is 20 liters / minute. The gas GA is nitrogen gas.

[0263] In the comparative example, the gas GA is not supplied to the processing liquid LQ heated to a temperature higher than the normal boiling point.

[0264] In Example 1, Example 2 and the comparative example, pure water is continuously replenished at a flow rate of 0.3 liters / minute using the diluent supply unit 160. Then, the specific gravity of the treatment liquid LQ is measured using the measuring unit 147. The measuring unit 147 does not measure the specific gravity of the treatment liquid LQ circulating in the piping 141, but measures the specific gravity of the treatment liquid LQ in the inner tank 112. Based on the measurement results of the specific gravity, the pure water evaporation capacity in Example 1, Example 2 and the comparative example is confirmed. The pure water evaporation capacity is the ability to evaporate the water content of pure water from the treatment liquid LQ. Since pure water is replenished at a fixed flow rate, it can be inferred that if the pure water evaporation capacity is high, the specific gravity of the treatment liquid LQ remains fixed, and if the pure water evaporation capacity is low, the specific gravity of the treatment liquid LQ does not remain fixed.

[0265] Fig.11 Graph showing the time change of the specific gravity value of the treatment liquid LQ of Example 1, Example 2 and Comparative Example of the present invention. Fig.11 In the figure, the horizontal axis represents time and the vertical axis represents specific gravity.

[0266] like Fig.11 As shown, curve PL1 represents the specific gravity value of the processing liquid LQ measured in Example 1. Curve PL2 represents the specific gravity value of the processing liquid LQ measured in Example 2. Curve PL3 represents the specific gravity value of the processing liquid LQ measured in the comparative example.

[0267] In the comparative example, as shown in the curve PL3, the specific gravity value of the treatment liquid LQ keeps decreasing, and the temperature adjustment operation by the heater 143 stops at a time t0 of several tens of minutes after the pure water replenishment starts. The reason can be inferred as follows. That is, in the comparative example, because the evaporation capacity of pure water is low, the concentration of the treatment liquid LQ becomes lower, and the boiling point of the treatment liquid LQ becomes lower. As a result, the treatment liquid LQ explodes, generates a large amount of water vapor, and the heater 143 is overheated. As a result, the temperature adjustment operation by the heater 143 stops.

[0268] In contrast, in Example 1 and Example 2, although pure water is continuously replenished, the specific gravity value of the treatment liquid LQ is basically stable and approximately fixed near boiling after time t0. Therefore, it can be confirmed that in Example 1 and Example 2, the pure water evaporation capacity is higher than that of the comparative example. In other words, it can be confirmed that the pure water evaporation capacity can be improved by supplying gas GA to the treatment liquid LQ heated to a temperature above the standard boiling point. It can be inferred that in Example 1 and Example 2, because the pure water evaporation capacity is improved, the concentration of the treatment liquid LQ can reach the target value faster than the comparative example.

[0269] In particular, in Example 2 where the flow rate of the gas GA is relatively high, the specific gravity value of the processing liquid LQ is more stable than that of Example 1.

[0270] The above descriptions of the embodiments and examples of the present invention are made with reference to the accompanying drawings. However, the present invention is not limited to the embodiments and examples, and can be implemented in various forms within the scope of the gist thereof. In addition, the multiple components disclosed in the embodiments can be appropriately changed. For example, a component of all the components shown in a certain embodiment can be added to the components of another embodiment, or some of the components of all the components shown in a certain embodiment can be omitted from the embodiment.

[0271] In addition, the drawings are for the purpose of facilitating the understanding of the invention, and schematically illustrate the various components in the main body, and the thickness, length, number, spacing, etc. of the various components illustrated in the drawings may sometimes be different from the actual ones for the convenience of making the drawings. In addition, it goes without saying that the configuration of the various components shown in the above-mentioned embodiments is an example, and there is no particular limitation, and various changes can be made within the scope that does not substantially deviate from the effect of the present invention.

[0272] [Industrial Applicability]

[0273] The present invention relates to a processing liquid temperature control method, a substrate processing method, a processing liquid temperature control device and a substrate processing system, and has industrial applicability.

[0274] [Explanation of Symbols]

[0275] 1,1A Substrate Processing Department

[0276] 100,100A Substrate Handling System

[0277] 100B Substrate processing system (processing liquid temperature control device)

[0278] 110 Treatment tank (1st storage tank)

[0279] 180,281 Gas supply components

[0280] 143 Heater (1st temperature control unit)

[0281] 216 1st heater (1st temperature regulating unit)

[0282] 210 No. 1 storage tank

[0283] 270 Exhaust piping

[0284] 273 Exhaust pipe

[0285] 316 Second heater (second temperature control unit)

[0286] 310 Second storage tank

[0287] U2 Processing liquid temperature control device

[0288] W substrate.

Claims

1. A method for adjusting the temperature of a treatment liquid, comprising the following steps: heating a processing liquid used to process a substrate to a temperature above a normal boiling point of the processing liquid; supplying a gas that promotes evaporation of water from the heated treatment liquid to the treatment liquid stored in the first storage tank; discharging water vapor and the gas from the first storage tank; After the concentration of the treatment liquid stored in the first storage tank reaches a target value, supplying the treatment liquid from the first storage tank to the second storage tank; adjusting the temperature of the treatment liquid stored in the second storage tank so that the concentration of the treatment liquid is maintained at the target value; and supplying the processing liquid from the second storage tank to a substrate processing unit that processes the substrate; and In the step of maintaining the concentration of the treatment liquid at the target value, not supplying the treatment liquid with a gas that promotes evaporation of water; The treatment liquid is a liquid containing phosphoric acid.

2. A substrate processing method, comprising: The method for adjusting the temperature of the treatment liquid according to claim 1, and The step of treating the substrate with a treatment liquid.

3. A method for adjusting the temperature of a treatment liquid, comprising the following steps: heating a processing liquid used to process a substrate to a temperature above a normal boiling point of the processing liquid; supplying a gas that promotes evaporation of water from the heated treatment liquid to the treatment liquid stored in the first storage tank; discharging water vapor and the gas from the first storage tank; After the concentration of the treatment liquid stored in the first storage tank reaches a target value, supplying the treatment liquid from the first storage tank to the second storage tank; adjusting the temperature of the treatment liquid stored in the second storage tank so that the concentration of the treatment liquid is maintained at the target value; and supplying the processing liquid from the second storage tank to a substrate processing unit that processes the substrate; and In the step of maintaining the concentration of the treatment liquid at the target value, a gas that promotes evaporation of water is not supplied to the treatment liquid.

4. A treatment liquid temperature control device, comprising: A first temperature regulating part, heating a processing liquid used for processing a substrate to a temperature above a standard boiling point of the processing liquid; a first storage tank for storing the treatment liquid heated by the first temperature regulating unit; a gas supplying means for supplying a gas for promoting evaporation of water from the treatment liquid to the treatment liquid stored in the first storage tank; an exhaust pipe section for exhausting the water vapor and the gas from the first storage tank; a second storage tank to which the treatment liquid is supplied from the first storage tank after the concentration of the treatment liquid stored in the first storage tank reaches a target value; and a second temperature regulating unit for regulating the temperature of the treatment liquid stored in the second storage tank so that the concentration of the treatment liquid is maintained at the target value; and The second storage tank supplies the processing liquid to a substrate processing section that processes the substrate. In the second storage tank, a gas that promotes evaporation of water is not supplied to the processing liquid. The processing liquid is a liquid containing phosphoric acid.

5. The treatment liquid temperature control device according to claim 4, wherein The exhaust pipe section includes an exhaust pipe for exhausting the water vapor and the gas from the first storage tank. The cross-sectional area of ​​the flow path of the exhaust pipe satisfies the following formula: A×V≧Q A: The cross-sectional area of ​​the flow path of the exhaust pipe V: Flow rate of the exhaust gas flowing through the flow path of the exhaust pipe when the process of heating the process liquid to a temperature higher than the standard boiling point and the process of supplying the gas to the process liquid are not performed Q: The exhaust volume of the water vapor and the gas per unit time. The processing liquid temperature control device according to claim 4 , wherein a raw material of the gas supply component is resin.

7. A substrate processing system comprising: The treatment liquid temperature control device according to any one of claims 4 to 6; and The substrate processing unit processes the substrate using a processing liquid.

8. A treatment liquid temperature control device, comprising: A first temperature regulating part, heating a processing liquid used for processing a substrate to a temperature above a standard boiling point of the processing liquid; a first storage tank for storing the treatment liquid heated by the first temperature regulating unit; a gas supplying means for supplying a gas for promoting evaporation of water from the treatment liquid to the treatment liquid stored in the first storage tank; an exhaust pipe section for exhausting the water vapor and the gas from the first storage tank; a second storage tank to which the treatment liquid is supplied from the first storage tank after the concentration of the treatment liquid stored in the first storage tank reaches a target value; and a second temperature regulating unit for regulating the temperature of the treatment liquid stored in the second storage tank so that the concentration of the treatment liquid is maintained at the target value; and The second storage tank supplies the processing liquid to a substrate processing section that processes the substrate, and the gas that promotes evaporation of water is not supplied to the processing liquid in the second storage tank.

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