Substrate processing device and substrate processing method

Abstract

The present invention provides a technology for suppressing the mixing of processing liquids and the resulting generation of particles. A substrate processing device includes: a plurality of pipes for supplying processing liquids for substrate processing; a substrate processing unit connected to the plurality of pipes and for processing the substrate using the processing liquid; and a pipe arrangement unit for arranging the plurality of pipes in a manner close to each other, the pipe arrangement unit including at least one inner wall that separates at least one of the plurality of pipes from the other pipes and seals the atmosphere in each of the separated partitions.

Description

Technical Field

[0001] The technology disclosed in this specification relates to a substrate processing device and a substrate processing method. It should be noted that the substrate to be processed includes, for example, a semiconductor substrate, a substrate for a flat panel display (FPD: flat panel display) such as a liquid crystal display device or an organic EL (electroluminescence: electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a photomask, a ceramic substrate, a printed substrate, or a substrate for a solar cell. Background Art

[0002] Conventionally, in the manufacturing process of a semiconductor substrate (hereinafter referred to as a "substrate"), a substrate processing apparatus is used to perform various processes on the substrate. In the processes, a processing liquid for processing the upper surface of the substrate is used.

[0003] Since a plurality of processing liquids are generally used in substrate processing, a plurality of pipes for supplying these processing liquids to the substrate are used in a substrate processing apparatus (see, for example, Patent Document 1).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-163977 Summary of the invention

[0007] Sometimes, components of the external atmosphere (ambient gas) may penetrate into the processing liquid in the pipe. Conversely, sometimes, components of the processing liquid in the pipe may penetrate into the external atmosphere.

[0008] In this way, components of the external atmosphere (including other process liquids that have penetrated into the external atmosphere) may penetrate into the process liquid and mix with it, thereby further generating particles in the process liquid.

[0009] Since the mixing of the processing liquid reduces the uniformity of the processing liquid, it becomes a cause of reducing the uniformity of the substrate processing using the processing liquid. In addition, when particles are generated in the processing liquid, the particles may sometimes become attachments to the substrate.

[0010] The technology disclosed in this specification has been made in view of the above-described problems, and an object of the invention is to provide a technology for suppressing mixing of treatment liquids and the resulting generation of particles.

[0011] A first form of a substrate processing device of the technology disclosed in this specification comprises: a plurality of pipes for supplying a processing liquid for processing a substrate; a substrate processing unit connected to the plurality of pipes and for processing the substrate using the processing liquid; and a pipe configuration unit for configuring the plurality of pipes in proximity to each other, the pipe configuration unit comprising at least one inner wall that separates at least one of the plurality of pipes from the other pipes and seals the atmosphere within each separated partition.

[0012] A substrate processing apparatus according to a second aspect of the technology disclosed in this specification is related to the first aspect, wherein the pipe arrangement portion is a fluid box adjacent to the substrate processing portion.

[0013] A third aspect of the substrate processing apparatus of the technology disclosed in this specification is related to the first or second aspect, and a plurality of the pipes are arranged in at least one of the partitions, and the plurality of pipes in the same partition are the pipes for supplying the same type of processing liquid.

[0014] A substrate processing apparatus according to a fourth aspect of the technology disclosed in this specification is related to the first or second aspect, and further includes a gas supply unit that supplies gas into the partition.

[0015] A substrate processing apparatus according to a fifth aspect of the technology disclosed in this specification is related to the fourth aspect, wherein the gas supplied into the partition by the gas supply unit is dry air or inert gas.

[0016] A sixth aspect of the technology disclosed in this specification is related to the first or second aspect, and further includes a pressure control unit that controls the pressure in the partition, wherein the pressure control unit controls the pressure in the partition to be less than the pressure in the pipe.

[0017] A seventh aspect of the technology disclosed in this specification is related to the sixth aspect in the substrate processing apparatus, wherein the pressure control unit controls the pressure in the partition to be equal to the pressure in the pipe.

[0018] The eighth form of the substrate processing device of the technology disclosed in this specification is associated with the first or second form, and the inner wall has a first inner wall layer and a second inner wall layer, the second inner wall layer is made of a material different from the first inner wall layer and is stacked with the first inner wall layer, and the first inner wall layer and the second inner wall layer are stacked in a direction to connect partitions separated from each other.

[0019] A ninth aspect of the technology disclosed in this specification is related to the eighth aspect in the substrate processing apparatus, wherein the second inner wall layer is made of metal or fluororesin.

[0020] The tenth form of the substrate processing device of the technology disclosed in this specification is associated with the first or second form, and the inner wall has a first inner wall layer and a second inner wall layer forming a gap between the first inner wall layer, and the first inner wall layer and the second inner wall layer are stacked in a direction to connect the partitions separated from each other.

[0021] An eleventh aspect of the technology disclosed in this specification is related to the tenth aspect, wherein the inner wall further includes a third inner wall layer formed in the gap, and the third inner wall layer is made of metal or fluororesin.

[0022] The twelfth form of the technology disclosed in this specification comprises: a pipe for supplying a processing liquid for processing a substrate; and a substrate processing unit connected to the pipe and used to process the substrate using the processing liquid, the pipe comprising: a first tubular pipe material surrounding a flow path for the processing liquid to flow, and a second tubular pipe material surrounding the first pipe material, wherein a closed gap is formed between the first pipe material and the second pipe material.

[0023] A substrate processing apparatus according to a thirteenth aspect of the technology disclosed in this specification is related to the twelfth aspect, and further includes a gas supply unit that supplies gas into the gap.

[0024] The fourteenth form of the technology disclosed in this specification is a substrate processing device comprising: a piping for supplying a processing liquid for processing a substrate; and a substrate processing unit connected to the piping and used to process the substrate using the processing liquid, the piping comprising: a first tubular piping material surrounding a flow path for the processing liquid to flow; and a second tubular piping material made of a material different from the first piping material and surrounding the first piping material, the second piping material being made of a metal including SUS or a fluororesin including PFA, PTFE or PVDF.

[0025] A fifteenth aspect of the technology disclosed in this specification is related to the fourteenth aspect, and the pipe further includes a cylindrical third pipe material that is made of a material different from the second pipe material and surrounds the second pipe material.

[0026] A sixteenth form of a substrate processing method of the technology disclosed in the present specification is a substrate processing method for processing a substrate using a substrate processing device, wherein the substrate processing device comprises: a substrate processing unit connected to a plurality of pipes for supplying a processing liquid and used to process the substrate using the processing liquid; and a pipe configuration unit which configures a plurality of the pipes in proximity to each other, wherein the substrate processing method comprises a step in which the substrate processing unit processes the substrate using the processing liquid, and the pipe configuration unit comprises at least one inner wall which separates at least one of the plurality of pipes from the other pipes and seals the atmosphere within each separated partition.

[0027] A seventeenth aspect of the technology disclosed in this specification is related to the sixteenth aspect, and further includes a step of supplying a gas into the partition.

[0028] An eighteenth aspect of the technology disclosed in this specification is related to the sixteenth or seventeenth aspect, and further includes a step of making the pressure in the partition equal to or lower than the pressure in the pipe.

[0029] A nineteenth aspect of the technology disclosed in this specification is related to the sixteenth or seventeenth aspect, and further includes a step of making the pressure in the partition equal to the pressure in the pipe.

[0030] The twentieth form of a substrate processing method of the technology disclosed in the present specification is a substrate processing method for processing a substrate using a substrate processing device, wherein the substrate processing device comprises a substrate processing section, the substrate processing section is connected to a piping for supplying a processing liquid, and is used to process the substrate using the processing liquid, the substrate processing method comprises a step in which the substrate processing section processes the substrate using the processing liquid, the piping comprises: a first tubular piping material surrounding a flow path for flowing the processing liquid, and a second tubular piping material surrounding the first piping material, wherein a closed gap is formed between the first piping material and the second piping material.

[0031] A substrate processing method according to a twenty-first aspect of the technology disclosed in this specification is related to the twentieth aspect, and further includes a step of supplying a gas into the gap.

[0032] The twenty-second form of a substrate processing method of the technology disclosed in this specification is a substrate processing method for processing a substrate using a substrate processing device, wherein the substrate processing device comprises a substrate processing unit, the substrate processing unit is connected to a piping for supplying a processing liquid, and is used to process the substrate using the processing liquid, the substrate processing method comprises a step in which the substrate processing unit processes the substrate using the processing liquid, the piping comprises: a first tubular piping material surrounding a flow path for the processing liquid to flow; and a second tubular piping material composed of a material different from the first piping material and surrounding the first piping material, the second piping material being composed of a metal including SUS or a fluororesin including PFA, PTFE or PVDF.

[0033] Effects of the Invention

[0034] According to the first to eleventh aspects of the technology disclosed in this specification, since the atmosphere of each partition is separated by the inner wall, it is possible to suppress the process liquid that penetrates into the atmosphere outside the pipe from the pipe arranged in a close manner from penetrating into the pipe of the adjacent partition. Therefore, it is possible to suppress the mixing of the process liquid and the resulting particle generation.

[0035] Furthermore, according to the twelfth or thirteenth aspect of the technology disclosed in this specification, since the closed gap between the first piping material and the second piping material effectively suppresses the penetration of the inside and outside of the piping, it is possible to suppress the mixing of components of the external atmosphere into the processing liquid in the piping.

[0036] Furthermore, according to the fourteenth or fifteenth aspect of the technology disclosed in this specification, since the second piping material effectively suppresses the permeation of the inside and outside of the piping, it is possible to suppress the mixing of components of the external atmosphere into the processing liquid in the piping.

[0037] In addition, according to the sixteenth to nineteenth aspects of the technology disclosed in this specification, since the atmosphere of each partition is separated by the inner wall, it is possible to suppress the process liquid that penetrates into the atmosphere outside the pipe from the pipes arranged in a close manner from penetrating into the pipes of the adjacent partitions. Therefore, it is possible to suppress the mixing of the process liquids and the resulting generation of particles.

[0038] In addition, according to the twentieth or twenty-first aspect of the technology disclosed in this specification, since the closed gap between the first piping material and the second piping material effectively suppresses the penetration of the inside and outside of the piping, it is possible to suppress the mixing of components of the external atmosphere into the processing liquid in the piping.

[0039] Furthermore, according to the twenty-second aspect of the technology disclosed in this specification, since the second piping material effectively suppresses the penetration of the inside and outside of the piping, it is possible to suppress the mixing of components of the external atmosphere into the processing liquid in the piping.

[0040] In addition, the objects, features, aspects, and advantages related to the technology disclosed in this specification will become more apparent from the following detailed description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is a diagram schematically showing a configuration example of a substrate processing apparatus according to an embodiment.

[0042] Figure 2 This is a diagram schematically showing an example of a liquid processing unit and related structures in a substrate processing apparatus according to an embodiment.

[0043] Figure 3 This is a functional block diagram showing an example of the connection relationship between each element of the substrate processing apparatus and the control unit.

[0044] Figure 4 It is a diagram showing a modified example of the structure of the fluid box.

[0045] Figure 5 It is a diagram showing another modified example of the structure of the fluid box.

[0046] Figure 6 It is a diagram showing another modified example of the structure of the fluid box.

[0047] Figure 7 It is a cross-sectional view showing a modified example of a partial structure of the fluid box.

[0048] Figure 8 It is a cross-sectional view showing another modified example of the partial structure of the fluid box.

[0049] Fig. 9 It is a cross-sectional view showing another modified example of the partial structure of the fluid box.

[0050] Fig.10 It is a cross-sectional view showing a structural example of a double-pipe.

[0051] Fig.11 It is a cross-sectional view showing another structural example of the double piping.

[0052] Fig.12 It is a cross-sectional view showing another structural example of the double piping. DETAILED DESCRIPTION

[0053] In the following embodiments, although detailed features are shown for explaining the technology, they are only examples and not all of them are necessary features for implementing the embodiments.

[0054] It should be noted that the drawings are schematically shown, and for the sake of convenience of explanation, the structure is appropriately omitted or simplified in the drawings. In addition, the size and position of the structures shown in different drawings are not necessarily accurately recorded and can be appropriately changed. In addition, in drawings such as top views that are not sectional views, hatching is sometimes marked to facilitate understanding of the contents of the embodiments.

[0055] In the following description, the same components are denoted by the same reference numerals and their names and functions are the same, so their detailed descriptions may be omitted to avoid duplication.

[0056] In the following description, when a certain component is described as “having”, “including”, or “having”, it is not an exclusive expression that excludes the existence of other components unless otherwise specified.

[0057] In the following description, even if ordinal numbers such as "first" or "second" are used, these terms are used for ease of understanding of the contents of the embodiments and for convenience, and are not limited to the order that can be generated by these ordinal numbers.

[0058] In addition, regarding the expressions indicating relative or absolute positional relationships in the descriptions recorded below, such as "parallel", "center", etc., unless otherwise specified, they include situations where the positional relationship is strictly indicated, as well as situations where the angle or distance is displaced within the tolerance range or the range that can achieve the same degree of function.

[0059] In addition, in the description recorded below, expressions indicating equal states, such as "same", "equal", "uniform", etc., unless otherwise specified, include cases where a strictly equal state is indicated, as well as cases where differences occur within the range of tolerance or the range where the same degree of functionality can be obtained.

[0060] In addition, in the description recorded below, even if terms such as "up", "down", "left", "right", "side", "bottom", "front" or "inside" are sometimes used to indicate specific positions and directions, these terms are used to facilitate understanding of the contents of the implementation method and for convenience, and are not related to the directions during actual implementation.

[0061] In the following description, when it is described as "the upper surface of..." or "the lower surface of...", etc., it includes not only the upper surface of the target component itself, but also the state where other components are formed on the upper surface of the target component. That is, for example, when it is described as "B provided on the upper surface of A", it does not prevent other component "C" from being interposed between A and B.

[0062] In addition, in the description recorded below, expressions indicating shapes, such as "quadrilateral" or "cylindrical shape", etc., include the case where the shape is strictly indicated, and the case where projections and depressions or chamfers are formed within the tolerance range or the range that can achieve the same degree of function, unless otherwise specified.

[0063] <Implementation Method>

[0064] Hereinafter, a substrate processing apparatus and a substrate processing method according to the present embodiment will be described.

[0065] <About the structure of substrate processing apparatus>

[0066] Figure 1 This is a diagram schematically showing a configuration example of a substrate processing apparatus according to the present embodiment. It should be noted that, in order to facilitate understanding of the configuration, some components may be omitted or simplified in this figure.

[0067] The substrate processing apparatus 1 is a single-sheet processing apparatus that processes disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 performs various processes on the substrate W such as a cleaning process and an etching process.

[0068] like Figure 1 As shown in the figure, the substrate processing apparatus 1 includes an index section 2 and a processing section 3 in this order toward the positive direction of the X-axis.

[0069] In addition, the processing block 3 includes a transfer area 30, a processing module 31, a processing module 32, and a processing module 33 in this order toward the positive direction of the X axis.

[0070] <Index Area>

[0071] The index area 2 includes: a substrate container 21 capable of accommodating multiple substrates W in a stacked state; a table 22 supporting the substrate container 21; and an index robot 23, which receives unprocessed substrates W from the substrate container 21 and delivers substrates W that have been processed in the processing area 3 to the substrate container 21.

[0072] In addition, although Figure 1 In the example shown in FIG. 1 , the number of stages 22 is set to one for simplicity, but a larger number may be arranged in the Y-axis direction.

[0073] The substrate storage container 21 may be a front opening unified pod (FOUP) that stores the substrates W in a sealed state, or a standard mechanical interface (SMIF) box or an open cassette (OC).

[0074] The index robot 23 includes, for example, a base portion 23A, a multi-joint arm 23B, and two hands 23C and 23D provided at a distance from each other in the vertical direction.

[0075] The base portion 23A is fixed to, for example, a frame that defines the outer shape of the index block 2 of the substrate processing apparatus 1 .

[0076] The multi-joint arm 23B is composed of a plurality of arms that are rotatable along a horizontal plane and are rotatably connected to each other, and the arm is configured to be flexible and extendable by changing the angle between the arms at the joints that are the connecting parts of the arms.

[0077] The base end of the multi-joint arm 23B is coupled to the base part 23A so as to be rotatable about a vertical axis. The multi-joint arm 23B is coupled to the base part 23A so as to be liftable.

[0078] The hand 23C and the hand 23D are configured to be able to hold one substrate W respectively.

[0079] The index robot 23 uses, for example, the hand 23C to carry out an unprocessed substrate W from the substrate container 21 held on the stage 22. Then, the index robot 23 delivers the substrate W to a transport mechanism (not shown here) from the negative direction of the X-axis. In addition, the transport mechanism includes a slide mechanism that moves on a linear guide rail, or a transport robot that transports the substrate W to an arbitrary direction and height.

[0080] The index robot 23 receives a processed substrate W from the transport mechanism using, for example, the hand 23D, and then stores the substrate W in the substrate container 21 held on the stage 22 .

[0081] <Processing area>

[0082] The substrate W is transported between each liquid processing unit and a position in the negative direction of the X axis near the index area 2 by the transport mechanism. The transport area 30 is a space where the substrate W is moved by the transport mechanism.

[0083] The processing module 31 in the processing area 3 includes: a plurality of liquid processing units 31A for performing prescribed processing on an unprocessed substrate W supplied from a conveying mechanism; a fluid box 41A for supplying processing liquid to the liquid processing unit 31A; a liquid processing unit 31B; a fluid box 41B for supplying processing liquid to the liquid processing unit 31B; a liquid processing unit 31C; a fluid box 41C for supplying processing liquid to the liquid processing unit 31C; and a piping section 51 in which a plurality of pipes for supplying processing liquid to the fluid box 41A, the fluid box 41B and the fluid box 41C, respectively, are arranged in close proximity.

[0084] Similarly, the processing module 32 in the processing area 3 includes: a plurality of liquid processing units 32A for performing prescribed processing on an unprocessed substrate W supplied from a conveying mechanism; a fluid box 42A for supplying processing liquid to the liquid processing unit 32A; a liquid processing unit 32B; a fluid box 42B for supplying processing liquid to the liquid processing unit 32B; a liquid processing unit 32C; a fluid box 42C for supplying processing liquid to the liquid processing unit 32C; and a piping section 52 in which a plurality of pipes for supplying processing liquid to the fluid box 42A, the fluid box 42B and the fluid box 42C, respectively, are arranged in close proximity.

[0085] Similarly, the processing module 33 in the processing area 3 includes: a plurality of liquid processing units 33A for performing prescribed processing on an unprocessed substrate W supplied from a conveying mechanism; a fluid box 43A for supplying processing liquid to the liquid processing unit 33A; a liquid processing unit 33B; a fluid box 43B for supplying processing liquid to the liquid processing unit 33B; a liquid processing unit 33C; a fluid box 43C for supplying processing liquid to the liquid processing unit 33C; and a piping section 53 in which a plurality of pipes for supplying processing liquid to the fluid box 43A, the fluid box 43B and the fluid box 43C, respectively, are arranged in close proximity.

[0086] The liquid processing unit 31A, the liquid processing unit 31B, and the liquid processing unit 31C are sequentially stacked in the positive direction of the Z axis to form a processing tower TW31.

[0087] Similarly, the liquid processing unit 32A, the liquid processing unit 32B, and the liquid processing unit 32C are stacked in this order in the positive direction of the Z axis to form the processing tower TW32.

[0088] Similarly, the liquid processing unit 33A, the liquid processing unit 33B, and the liquid processing unit 33C are stacked in this order in the positive direction of the Z axis to form the processing tower TW33.

[0089] In addition, although Figure 1 In the example, the number of liquid processing units is set to nine for simplicity, but the number of liquid processing units is not limited to Figure 1 Example of the situation.

[0090] In addition, the prescribed treatment of the substrate W in each liquid processing unit includes various treatments such as fluid treatment using processing liquid (i.e., processing liquid) or gas, treatment using electromagnetic waves such as ultraviolet rays, or physical cleaning treatment (such as brushing or spraying, etc.).

[0091] In the piping section 51, piping 51A, piping 51B and piping 51C for the flow of the same or different processing liquids, and a discharge piping 51D for the flow of discharge liquid from the liquid treatment unit 31A, liquid treatment unit 31B and liquid treatment unit 31C are arranged in close proximity (for example, a distance of about 1 cm).

[0092] Similarly, in the piping section 52, piping 52A, piping 52B and piping 52C for the flow of the same or different processing liquids, and a discharge piping 52D for the flow of discharge liquid from the liquid treatment unit 32A, liquid treatment unit 32B and liquid treatment unit 32C are arranged in close proximity (for example, a distance of about 1 cm).

[0093] Similarly, in the piping section 53, piping 53A, piping 53B and piping 53C for the flow of the same or different processing liquids, and a discharge piping 53D for the flow of discharge liquid from the liquid treatment unit 33A, liquid treatment unit 33B and liquid treatment unit 33C are arranged in close proximity (for example, a distance of about 1 cm).

[0094] A plurality of openings connected to a plurality of pipes are provided at the lower part of each of the piping parts 51, 52 and 53 in the negative direction of the Z axis. In addition, a plurality of openings communicating with the fluid tank are provided at the side surface of each of the piping parts 51, 52 and 53.

[0095] Moreover, one end and the other end of each pipe for supplying the processing liquid in the piping section 51, the piping section 52 and the piping section 53 are connected to the opening at the lower part in the negative direction of the Z axis, and the branch pipes of each pipe extending to the corresponding liquid processing unit are connected to the opening connected to the fluid box.

[0096] In addition, one end of each of the drainage pipes in the pipe sections 51 , 52 , and 53 is connected to an opening at the lower portion in the negative direction of the Z axis, and the other end of the branch is connected to an opening communicating with the fluid tank.

[0097] Figure 2 1 is a diagram schematically showing an example of a liquid processing unit 31A and related structures in a substrate processing apparatus according to this embodiment. In addition, the structures of other liquid processing units are also similar to those of Figure 2 The situation illustrated in is the same.

[0098] like Figure 2As shown in the example, the liquid processing unit 31A includes: a box-shaped processing chamber 250 having an internal space; a spinning chuck 251, which holds a substrate W in a horizontal position in the processing chamber 250 and simultaneously rotates the substrate W around a vertical rotation axis Z1 passing through the center of the substrate W; and a cylindrical processing cover 511, which surrounds the spinning chuck 251 around the rotation axis Z1 of the substrate W.

[0099] The processing chamber 250 is surrounded by a box-shaped wall 250A. An opening 250B for carrying the substrate W into and out of the processing chamber 250 is formed in the wall 250A.

[0100] The opening 250B is opened and closed by the shutter 250C. The shutter 250C is moved to a closed position (in a closed position) covering the opening 250B by a shutter lifting mechanism (not shown). Figure 2 The opening position of the opening portion 250B (indicated by a two-dot chain line in FIG. Figure 2 The solid line in the figure indicates the rise and fall of the two axes.

[0101] like Figure 2 As shown in the example, the spin chuck 251 includes: a circular plate-shaped spin base 251A for vacuum adsorbing the lower surface of a horizontally positioned substrate W; a spin shaft 251C extending downward from a central portion of the spin base 251A; and a spin motor 251D for rotating the substrate W adsorbed on the spin base 251A by rotating the spin shaft 251C.

[0102] In addition, the rotating chuck 251 is not limited to Figure 2 In the case of the vacuum adsorption type chuck illustrated in FIG. 1 , for example, a clamping type chuck may be provided with a plurality of chuck pins protruding upward from the outer peripheral portion of the upper surface of the spin base, and the peripheral portion of the substrate W may be clamped by the chuck pins.

[0103] like Figure 2 As illustrated in FIG. 1 , a plurality of pipes extending from adjacent fluid tanks 41A are connected to the liquid processing unit 31A.

[0104] Here, the fluid box 41A includes: sealed partitions 160, 164, 152, and 154, which are separated from each other and sealed; and inner walls 141A, 141B, and 141C that separate and seal the partitions.

[0105] exist Figure 2In the example of FIG. 1 , the closed partition 160 is provided with a pipe 51B and a flushing liquid valve 62 for supplying a flushing liquid to the liquid processing unit 31A. In addition, the closed partition 164 is provided with a pipe 51A and a cleaning liquid valve 66 for supplying a cleaning liquid to the liquid processing unit 31A. In addition, the closed partition 152 is provided with a pipe 51C and a liquid valve 256 for supplying a chemical liquid to the liquid processing unit 31A. In addition, the closed partition 154 is provided with a drain pipe 51D for flowing the drain from the liquid processing unit 31A.

[0106] The atmosphere in each closed partition is separated and sealed from the atmosphere outside the closed partition. It should be noted that the "sealed" in this embodiment includes not only strict sealing, but also includes, for example, a state to the extent that even if a tiny gap is generated due to an opening (not shown here) required for piping to pass into each closed partition, and strict sealing cannot be maintained due to the gap, it is separated from the external atmosphere and will not be mixed.

[0107] Since the atmosphere of each closed partition is separated by the inner wall, the processing liquid that penetrates into the atmosphere outside the pipes arranged in a close manner (for example, pipes arranged at a distance of about 1 cm) can be fully suppressed from penetrating into the pipes in the adjacent closed partitions.

[0108] Here, the term "penetration" includes the case where any component contained in the treatment liquid or the like permeates.

[0109] Since highly volatile processing liquids can easily penetrate from and into the piping, it is particularly effective to suppress mixing of processing liquids between partitions by setting the above-mentioned inner wall for processing liquids that are heated during substrate processing (for example, when the substrate is heated to 70°C).

[0110] Furthermore, the structures of the fluid boxes corresponding to the other liquid processing units are also the same as that of the fluid box 41A.

[0111] The pipe 51C passing through the sealed partition 152 in the fluid box 41A is connected to the liquid processing unit 31A. In addition, a liquid medicine nozzle 252 is connected to the front end of the pipe 51C. The liquid medicine nozzle 252 sprays liquid medicine toward the upper surface of the substrate W held by the spin chuck 251. As the liquid medicine, for example, an organic solvent such as IPA (isopropyl alcohol) or an inorganic solvent such as hydrochloric acid, hydrofluoric acid, sulfuric acid, or ammonia water can be used.

[0112] The end of the piping 51C on the opposite side from the liquid medicine nozzle 252 is inserted into the liquid medicine tank 253 for storing the liquid medicine to be supplied to the liquid medicine nozzle 252. In addition, the piping 51C is provided with a liquid delivery device 255 (e.g., a pump) for delivering the liquid medicine in the liquid medicine tank 253 to the piping 51C, a liquid medicine valve 256 for opening and closing the inside of the piping 51C, a circulation piping 257 for connecting the piping 51C with the liquid medicine tank 253 on the upstream side (i.e., the liquid medicine tank 253 side) of the liquid medicine valve 256, and a circulation valve 258 for opening and closing the inside of the circulation piping 257.

[0113] In addition, for example, the liquid feeding device 255 and the chemical solution tank 253 are arranged in the circulation container 600 .

[0114] The opening and closing of the liquid medicine valve 256 and the circulation valve 258 are controlled by a control unit described later. When the liquid medicine in the liquid medicine tank 253 is supplied to the liquid medicine nozzle 252, the liquid medicine valve 256 is opened and the circulation valve 258 is closed. In this state, the liquid medicine sent from the liquid medicine tank 253 to the pipe 51C by the liquid feeding device 255 is supplied to the liquid medicine nozzle 252.

[0115] On the other hand, when the supply of the chemical liquid to the chemical liquid nozzle 252 is stopped, the chemical liquid valve 256 is closed and the circulation valve 258 is opened. In this state, the chemical liquid sent from the chemical liquid tank 253 to the piping 51C by the liquid sending device 255 is returned to the chemical liquid tank 253 through the circulation piping 257. Therefore, during the supply stop period when the supply of the chemical liquid to the chemical liquid nozzle 252 is stopped, the chemical liquid continues to circulate in the circulation path formed by the chemical liquid tank 253, the piping 51C and the circulation piping 257.

[0116] In addition, if Figure 2 As shown in the example, the pipe 51B passing through the sealed partition 160 in the fluid box 41A is connected to the liquid processing unit 31A. In addition, the front end of the pipe 51B is connected to the rinse liquid nozzle 60. The rinse liquid nozzle 60 sprays the rinse liquid toward the upper surface of the substrate W held by the spin chuck 251.

[0117] A rinse liquid supply source (not shown) is connected to the end of the pipe 51B on the opposite side from the rinse liquid nozzle 60. In addition, a rinse liquid valve 62 is provided on the pipe 51B to switch the supply and stop of the rinse liquid from the rinse liquid supply source to the rinse liquid nozzle 60. As the rinse liquid, DIW (deionized water) or the like can be used.

[0118] By supplying the rinse liquid from the rinse liquid nozzle 60 to the substrate W, it is possible to rinse away the attached matter and the like attached to the substrate W.

[0119] In addition, if Figure 2As shown in the example, the pipe 51A passing through the sealed partition 164 in the fluid box 41A is connected to the liquid processing unit 31A. In addition, a cleaning liquid nozzle 64 is connected to the front end of the pipe 51A. The cleaning liquid nozzle 64 sprays the cleaning liquid toward a predetermined portion (e.g., the spin base 251A) inside the processing chamber 250.

[0120] A cleaning liquid supply source (not shown) is connected to the end of the pipe 51A on the opposite side from the cleaning liquid nozzle 64. In addition, a cleaning liquid valve 66 is provided on the pipe 51A to switch the supply and stop of the cleaning liquid from the pipe 51A to the cleaning liquid nozzle 64. As the cleaning liquid, DIW (deionized water) or the like can be used.

[0121] The cleaning liquid nozzle 64 is attached to the inner wall of the processing chamber 250. While the substrate W is held by the spin chuck 251, the spin base 251A rotates, and the cleaning liquid is ejected from the cleaning liquid nozzle 64.

[0122] The cleaning liquid sprayed from the cleaning liquid nozzle 64 splashes back on the upper surface of the substrate W, and the cleaning liquid is scattered into the processing chamber 250. By scattering the cleaning liquid in this way, various components (such as the processing cover 511) arranged in the processing chamber 250 can be cleaned.

[0123] The processing cover 511 is provided so as to surround the spin chuck 251 and is moved up and down in the vertical direction by a motor (not shown). The upper portion of the processing cover 511 is moved up and down between an upper position where the upper end is above the substrate W held by the spin base 251A and a lower position where the upper end is below the substrate W.

[0124] The processing liquid scattered from the upper surface of the substrate W to the outside is blocked by the inner side of the processing cover 511. The processing liquid blocked by the processing cover 511 is appropriately discharged to the outside of the processing chamber 250 through the drain port 513 provided at the bottom of the processing chamber 250 and inside the processing cover 511, and further through the drain pipe 51D passing through the closed partition 154.

[0125] In addition, an exhaust port 515 is provided at a side portion of the processing chamber 250. The atmosphere in the processing chamber 250 is appropriately exhausted to the outside of the processing chamber 250 through the exhaust port 515.

[0126] In the above description, for example, since the atmospheres of the closed partition 164 and the closed partition 152 are separated from each other by the inner wall 141B, the cleaning liquid that penetrates from the piping 51A in the closed partition 164 and the chemical liquid that penetrates from the piping 51C in the closed partition 152 can be fully prevented from mixing through the atmosphere.

[0127] Therefore, it is possible to sufficiently suppress both the mixing of the processing liquid and the generation of particles in the processing liquid.

[0128] Figure 3 1 is a functional block diagram showing an example of a connection relationship between each element of the substrate processing apparatus 1 and the control unit 7 .

[0129] The hardware structure of the control unit 7 is the same as that of a general computer. That is, the control unit 7 includes: a CPU (central processing unit) 71 for performing various calculations; a ROM (read only memory) 72 for storing basic programs; a RAM (random access memory) 73 for storing various information; and a non-transient storage unit 74 for storing control application programs or data.

[0130] The CPU 71 , the ROM 72 , the RAM 73 , and the storage unit 74 are connected to one another via a bus line 75 or the like.

[0131] The control application or data may be provided to the control unit 7 in a state recorded in a non-transitory recording medium (such as a semiconductor memory, an optical medium, or a magnetic medium). In this case, a reading device that reads the control application or data from the recording medium may be connected to the bus wiring 75.

[0132] In addition, the control application program or data may be provided to the control unit 7 from a server or the like via a network. In this case, a communication unit that performs network communication with an external device may be connected to the bus wiring 75 .

[0133] An input unit 76 and a display unit 77 are connected to the bus wiring 75. The input unit 76 includes various input devices such as a keyboard and a mouse. An operator inputs various information to the control unit 7 via the input unit 76. The display unit 77 is composed of a display device such as a liquid crystal display, and displays various information.

[0134] The control unit 7 is connected to the working parts of each liquid processing unit (such as the drug liquid valve 256, the circulation valve 258, the flushing liquid valve 62, the cleaning liquid valve 66, the gate 250C or the rotating motor 251D, etc.), the driving part that drives the conveying mechanism (such as a motor for reciprocating the conveying mechanism, etc.), the working part of the indexing robot 23 (such as a motor for driving the multi-joint arm 23B, etc.), etc., and controls their actions.

[0135] <Modification of Fluid Box>

[0136] exist Figure 2In the example shown in FIG. 1 , one pipe is arranged in each closed partition, but a plurality of pipes may be arranged in one closed partition.

[0137] Figure 4 FIG. 2 is a diagram showing a modified example of the structure of the fluid box. Figure 4 As shown, in the fluid box 47 , the pipe 51B for supplying the flushing liquid and the pipe 51A for supplying the cleaning liquid are arranged in the same closed partition 166 .

[0138] On the other hand, the piping 51C for the chemical liquid is arranged in the sealed partition 167 , and the piping 51D for drainage is arranged in the sealed partition 168 .

[0139] Here, the rinse liquid and the cleaning liquid are both the same processing liquid, for example, both are DIW (deionized water).

[0140] according to Figure 4 The structure shown can reduce the number of inner walls while suppressing mixing of different process liquids via the atmosphere.

[0141] Figure 5 2 is a diagram showing another modified example of the structure of the fluid box. Figure 5 As shown, in the fluid box 48, a gas supply part 201, a gas supply part 202, and a gas supply part 203 are provided corresponding to the sealed partition 160, the sealed partition 164, and the sealed partition 152, respectively.

[0142] The gas supply units 201, 202, and 203 supply gas to the corresponding sealed sections to replace the gas retained in the sealed sections with the supplied gas. Thus, the gas supply units 201, 202, and 203 control the humidity in the corresponding sealed sections.

[0143] The gas supplied by the gas supply unit 201, the gas supply unit 202, and the gas supply unit 203 is, for example, an inert gas such as dry air or nitrogen. Figure 3 The control unit 7 shown controls.

[0144] according to Figure 5 The structure shown can reduce the degree of penetration of moisture and the like contained in the atmosphere in each closed section into the pipes arranged in the closed section by suppressing the humidity in the closed section to be low.

[0145] For example, when moisture contained in the atmosphere outside the pipe penetrates into IPA as the processing liquid, the moisture concentration increases and the surface tension also increases, so that the pattern on the upper surface of the substrate may be destroyed along with the drying process. Therefore, the mixing of moisture and the like into the processing liquid needs to be suppressed by the above-mentioned humidity control.

[0146] Alternatively, one gas supply unit may supply gas to a plurality of sealed sections.

[0147] Alternatively, you can set Figure 2 In the circulation container 600 or Figure 1 According to this structure, in these parts, the degree of penetration of moisture contained in the external atmosphere into the piping can be reduced by suppressing the humidity of the atmosphere around the piping in the parts to be low.

[0148] Figure 6 2 is a diagram showing another modified example of the structure of the fluid box. Figure 6 As shown, in the fluid box 49, a pressure control unit 301, a pressure control unit 302, and a pressure control unit 303 are provided corresponding to the sealed section 160, the sealed section 164, and the sealed section 152, respectively.

[0149] The pressure control unit 301, the pressure control unit 302, and the pressure control unit 303 control the pressure in the corresponding closed partition by decompression or vacuum control based on dry air or nitrogen, etc. Thus, the pressure control unit 301, the pressure control unit 302, and the pressure control unit 303 can control the balance between the pressure in the piping in the closed partition and the pressure in the closed partition.

[0150] In addition, the pressure control operations of the pressure control units 301, 302, and 303 are performed by, for example, Figure 3 The control unit 7 shown in the figure controls the pressure control unit 301, the pressure control unit 302, and the pressure control unit 303. The control unit 7 may perform feedback control on the pressure control unit 301, the pressure control unit 302, and the pressure control unit 303 based on the output value from a pressure gauge or the like that measures the pressure of the processing liquid in the pipe.

[0151] according to Figure 6 The structure shown can make the pressure outside the pipe in the closed partition lower than the pressure inside the pipe in the closed partition. In addition, the pressure outside the pipe in the closed partition can be equal to the pressure inside the pipe in the closed partition. However, the above-mentioned "equal pressure" situation not only includes the situation where the pressure is strictly equal, but also includes the following situation: within the range where the treatment liquid does not penetrate inside and outside the pipe, the pressure outside the pipe in the closed partition is different from the pressure inside the pipe in the closed partition.

[0152] according to Figure 6 The structure shown can suppress or desirably prevent the components contained in the atmosphere outside the pipe from being mixed into the processing liquid in the pipe due to the pressure difference between the inside and outside of the pipe.

[0153] In addition, the pressure outside the pipes in the sealed sections may be controlled to be the same among the plurality of sealed sections. In this case, one pressure control unit may control the pressures in the plurality of sealed sections.

[0154] In addition, you can also set Figure 2 In the circulation container 600 or Figure 1 According to this structure, in these parts, it is also possible to prevent the components contained in the atmosphere outside the piping from mixing into the processing liquid in the piping due to the pressure difference between the inside and outside of the piping.

[0155] In addition, you can also Figure 4 , Figure 5 and Figure 6 The forms are combined and applied with each other.

[0156] <Deformation example of inner wall>

[0157] The inner wall for isolating and sealing the atmosphere outside the pipe may be provided not only in the fluid box but also in a location where a plurality of pipes are arranged in close proximity, for example, Figure 1 Piping parts, etc.

[0158] In addition, the inner wall may be an inner wall having the following structure as long as it separates and seals the atmosphere of each closed section.

[0159] Figure 7 The following figure shows the cross-sectional structure of the inner wall of the fluid box, but the thickness of each inner wall layer is shown for convenience and does not show the actual thickness ratio including the outer wall of the fluid box.

[0160] The fluid box 44 includes at least an inner wall layer 144A and an inner wall layer 144B that separate the sealed partition 160 from the sealed partition 164. The inner wall layer 144A and the inner wall layer 144B are in contact with each other and are stacked in a direction connecting the sealed partition 160 and the sealed partition 164. In addition, the inner wall layer 144A is made of a different material from the inner wall layer 144B. It should be noted that the number of inner walls provided in the fluid box 44 is not limited to Figure 7 Quantity shown.

[0161] Here, although not particularly limited, one of the inner wall layer 144A and the inner wall layer 144B (in Figure 7In the figure, it is the inner wall layer 144B, but it can also be the inner wall layer 144A), for example, it can be a metal such as stainless steel (SUS) or a fluororesin such as perfluoroalkoxyalkane (PFA), polytetrafluoroethylene (PTFE) or polyvinylidene fluoride (PVDF).

[0162] according to Figure 7 In the structure shown, since the inner wall layer 144B effectively suppresses the penetration between the partitions, it is possible to suppress the mixing of the treatment liquid in the pipe.

[0163] Figure 8 4 is a cross-sectional view showing another modified example of the partial structure of the fluid box. The fluid box 45 includes at least an inner wall layer 145A and an inner wall layer 145B that separate the sealed partition 160 from the sealed partition 164. The inner wall layer 145A and the inner wall layer 145B can be, for example, a metal such as SUS or a fluororesin such as PFA, PTFE, or PVDF.

[0164] The inner wall layer 145A and the inner wall layer 145B are separated from each other, and an air layer, that is, a gap 165, is formed between the inner wall layer 145A and the inner wall layer 145B. In addition, the inner wall layer 145A and the inner wall layer 145B are stacked in a direction connecting the closed partition 160 and the closed partition 164 via the air layer. In addition, the number of inner walls provided in the fluid box 45 is not limited to Figure 8 Quantity shown.

[0165] According to such a structure, since the gap 165 between the inner wall layer 145A and the inner wall layer 145B effectively suppresses the penetration between the partitions, it is possible to suppress the mixing of the processing liquid in the pipe.

[0166] In addition, a gas supply unit may be separately provided to supply gas to the gap 165. According to this configuration, by suppressing the humidity of the atmosphere in the gap 165 to be low, the degree of penetration of moisture contained in the atmosphere in the gap 165 into the pipe can be reduced.

[0167] In addition, at least one of the inner wall layer 145A and the inner wall layer 145B may be made of metal such as SUS or fluororesin such as PFA, PTFE, or PVDF.

[0168] Fig. 9 4 is a cross-sectional view showing another modified example of the partial structure of the fluid box. The fluid box 46 includes at least an inner wall layer 146A, an inner wall layer 146B, and an inner wall layer 146C that separate the sealed partition 160 from the sealed partition 164. The inner wall layer 146A and the inner wall layer 146C can be, for example, a metal such as SUS or a fluororesin such as PFA, PTFE, or PVDF.

[0169] The inner wall layer 146B is made of a material different from that of the inner wall layer 146A and the inner wall layer 146C, and is formed between the inner wall layer 146A and the inner wall layer 146C. The inner wall layer 146A and the inner wall layer 146B are in contact with each other, and the inner wall layer 146B and the inner wall layer 146C are in contact with each other. In addition, the inner wall layer 146A, the inner wall layer 146B, and the inner wall layer 146C are stacked in a direction connecting the closed partition 160 and the closed partition 164. In addition, the number of inner walls provided in the fluid box 46 is not limited to Fig. 9 Quantity shown.

[0170] Here, although not particularly limited, the inner wall layer 146B may be made of, for example, metal such as SUS or fluororesin such as PFA, PTFE, or PVDF.

[0171] according to Fig. 9 In the structure shown, since the inner wall layer 146B effectively suppresses the penetration between the partitions, it is possible to suppress the mixing of the treatment liquid in the piping.

[0172] In addition, the inner wall layer 146B does not face any of the sealed partitions 160 and 164. Therefore, it is possible to suppress the atmosphere in the sealed partition from being contaminated by, for example, the components of the material for suppressing permeation being mixed into the atmosphere.

[0173] In addition, you can also Figure 7 , Figure 8 and Fig. 9 The different forms are respectively applied to multiple inner walls of the fluid box.

[0174] <Modification example of piping>

[0175] The above description shows a modified example of the structure in the fluid box, but it is not limited to the fluid box. Figure 1 The piping part, Figure 2 In the circulation container 600, Figure 2 In the area including the piping path connecting the circulation container 600 and the fluid box 41A, it is desirable to separate the atmosphere outside the piping from the atmosphere inside the piping by configuring the piping as double-layer piping. Figure 1 In a piping section where a plurality of piping are arranged in close proximity (for example, at a distance of about 1 cm), the effect of suppressing mixing of the processing liquid in the piping by isolating the atmosphere inside and outside the piping with double-layer piping is significant.

[0176] Fig.10 1 is a cross-sectional view showing a structural example of a double-layer piping. In addition, although the cross-sectional structure of the piping is shown in the following figures, the thickness of each piping material is shown for convenience and does not represent the actual thickness ratio, etc.

[0177] like Fig.10As shown in the example, the pipe 350 includes: a flow path ( Fig.10 The tubular piping material 350A is a tubular piping material 350A that surrounds the tubing material 350A. The tubing material 350B is made of a material different from that of the tubing material 350A. The shapes of the tubing material 350A and the tubing material 350B are not limited to Fig.10 The cylindrical shape shown may also be a square cylindrical shape, for example.

[0178] The piping material 350A is made of a resin material such as PFA. On the other hand, the piping material 350B is made of a material different from the piping material 350A. Moreover, although not particularly limited, the piping material 350B may be, for example, a metal such as SUS or a fluororesin such as PFA, PTFE, or PVDF.

[0179] according to Fig.10 In the structure shown, since the piping material 350B effectively suppresses the penetration of the inside and outside of the piping, it is possible to suppress the mixing of the processing liquid in the piping.

[0180] Fig.11 FIG. 2 is a cross-sectional view showing another structural example of a double-layer piping. Fig.11 As shown in the example, the pipe 351 includes: a flow path ( Fig.11 The tubular piping material 351A is formed of a tubular piping material 351B surrounding the tubing material 351A; and the tubular piping material 351C further surrounding the tubing material 351B. The tubing material 351B is made of a material different from that of the tubing material 351A and the tubing material 351C. The shapes of the tubing material 351A, the tubing material 351B, and the tubing material 351C are not limited to Fig.11 The cylindrical shape shown may also be a square cylindrical shape, for example.

[0181] The piping material 351A and the piping material 351C are made of a resin material such as PFA. In addition, the piping material 351A and the piping material 351C may also be made of the same material. On the other hand, the piping material 351B is made of a material different from the piping material 351A and the piping material 351C. Moreover, although not particularly limited, the piping material 351B may be, for example, a metal such as SUS or a fluororesin such as PFA, PTFE, or PVDF.

[0182] according to Fig.11In the structure shown, since the piping material 351B effectively suppresses the penetration of the inside and outside of the piping, the mixing of the treatment liquid in the piping can be suppressed. In addition, by further providing the piping material 351C, the piping material 351B composed of metal such as SUS or fluororesin such as PFA, PTFE or PVDF will not be exposed to the atmosphere outside the piping, so that the reaction that may occur between the piping material 351B and the atmosphere outside the piping can be suppressed.

[0183] Fig.12 FIG. 2 is a cross-sectional view showing another structural example of a double-layer piping. Fig.12 As shown in the example, the pipe 352 includes: a flow path ( Fig.12 The tubular piping material 352A is provided at the center of the tubular piping material 352A, and the tubular piping material 352B further surrounds the tubing material 352A. The shapes of the tubing material 352A and the tubing material 352B are not limited to Fig.12 The cylindrical shape shown may also be a square cylindrical shape, for example.

[0184] Here, a gap 353 as a closed space is formed between the piping material 352A and the piping material 352B. The piping material 352A and the piping material 352B are made of a resin material such as PFA.

[0185] according to Fig.12 In the structure shown, since the gap 353 between the piping material 352A and the piping material 352B effectively suppresses the penetration of the inside and outside of the piping, it is possible to suppress the components of the external atmosphere from mixing with the processing liquid in the piping.

[0186] In addition, a gas supply unit 354 may be separately provided to supply gas into the gap 353. According to this configuration, by suppressing the humidity of the atmosphere in the gap 353 to be low, the degree of penetration of moisture contained in the atmosphere in the gap 353 into the pipe can be reduced.

[0187] <Effects of the above-described embodiments>

[0188] Next, examples of the effects produced by the above-described embodiments are shown. It should be noted that in the following description, the effects are described based on the specific structures exemplified in the above-described embodiments, but other specific structures exemplified in this specification may be substituted within the scope of producing the same effects.

[0189] According to the embodiment described above, the substrate processing device includes a plurality of pipes (pipes 51A, pipes 51B, and pipes 51C), a substrate processing section, and a pipe configuration section. Here, the substrate processing section corresponds to, for example, the liquid processing unit 31A. In addition, the pipe configuration section corresponds to, for example, a portion where a plurality of pipes are configured in close proximity to each other, such as a fluid box 41A or a pipe section 51. The pipes supply a processing liquid (including a chemical solution, a rinse liquid, and a cleaning liquid) for processing the substrate W. A plurality of pipes are connected to the liquid processing unit 31A. In addition, the liquid processing unit 31A processes the substrate W using the processing liquid. In the fluid box 41A, a plurality of pipes are configured in close proximity to each other. In addition, the fluid box 41A includes an inner wall 141A that separates at least one pipe 51A among the plurality of pipes from the other pipes 51B, and separates each partition (in Figure 2 The atmosphere in the enclosed partition 160 and the enclosed partition 164 is enclosed.

[0190] According to this structure, the mixing of the treatment liquid and the resulting generation of particles can be suppressed. Specifically, since the atmosphere of each closed partition is separated by the inner wall, the treatment liquid that penetrates into the atmosphere outside the pipes arranged in a close manner (for example, the pipes arranged at a distance of about 1 cm) can be fully suppressed from penetrating into the pipes of the adjacent closed partitions.

[0191] In addition, the same effect can be produced even when at least one of the other structures illustrated in this specification is appropriately added to the structure described above, that is, when other structures illustrated in this specification that are not mentioned as structures described above are appropriately added.

[0192] In addition, according to the embodiment described above, the piping arrangement portion is a fluid box adjacent to the liquid processing unit 31A. According to this structure, by providing an inner wall in the fluid box in which a plurality of piping connected to the liquid processing unit 31A is arranged in a close manner, it is possible to sufficiently suppress the treatment liquid that has penetrated into the atmosphere outside the piping from the piping that crosses the closed partition and is arranged in a close manner from penetrating into the piping of the adjacent closed partition.

[0193] In addition, according to the above-described embodiment, a plurality of pipes 51A and pipes 51B are arranged in at least one closed partition 166. Moreover, the plurality of pipes 51A and pipes 51B in the same closed partition 166 are pipes for supplying the same type of processing liquid. According to this structure, the number of inner walls can be reduced, and at the same time, mixing of different processing liquids through the atmosphere can be suppressed.

[0194] In addition, according to the above-described embodiment, the substrate processing apparatus includes a gas supply unit 201, a gas supply unit 202, and a gas supply unit 203 for supplying gas into the closed partitions. According to this structure, by suppressing the humidity in the closed partitions to be low, it is possible to reduce the degree of penetration of moisture and the like contained in the atmosphere in each closed partition into the piping arranged in the closed partition.

[0195] According to the above-described embodiment, the gas supplied by the gas supply unit 201 into the sealed section 160 is dry air or inert gas. According to such a configuration, the humidity in the sealed section can be controlled so as to be kept low.

[0196] In addition, according to the above-described embodiment, the substrate processing apparatus includes a pressure control unit 301 that controls the pressure in the closed partition 160. Furthermore, the pressure control unit 301 controls the pressure in the closed partition 160 to be lower than the pressure in the pipe 51B. According to this structure, it is possible to prevent components (such as moisture) contained in the atmosphere outside the pipe from being mixed into the processing liquid in the pipe due to the pressure difference between the inside and outside of the pipe.

[0197] In addition, according to the above-described embodiment, the pressure control unit 301 controls the pressure in the closed partition 160 to be equal to the pressure in the pipe 51B. According to this structure, it is possible to prevent the components (such as water) contained in the atmosphere outside the pipe from being mixed into the processing liquid in the pipe due to the pressure difference between the inside and outside of the pipe.

[0198] In addition, according to the embodiment described above, the inner wall has a first inner wall layer and a second inner wall layer. Here, the first inner wall layer corresponds to, for example, any one of the inner wall layer 144A and the inner wall layer 146A. In addition, the second inner wall layer corresponds to, for example, any one of the inner wall layer 144B and the inner wall layer 146B. Here, the inner wall layer 144B is made of a material different from that of the inner wall layer 144A. In addition, the inner wall layer 144B is stacked with the inner wall layer 144A. Similarly, the inner wall layer 146B is made of a material different from that of the inner wall layer 146A. In addition, the inner wall layer 146B is stacked with the inner wall layer 146A. In addition, the first inner wall layer and the second inner wall layer are stacked in a direction connecting the partitions separated from each other. According to this structure, since the inner wall layer 144B (inner wall layer 146B) effectively suppresses the penetration between the partitions, the mixing of the treatment liquid in the piping can be suppressed.

[0199] In addition, according to the above-described embodiment, the inner wall layer 144B and the inner wall layer 146B are made of metal or fluororesin. According to this structure, since the inner wall layer 144B (inner wall layer 146B) effectively suppresses the penetration between the partitions, it is possible to suppress the mixing of the treatment liquid in the pipe.

[0200] In addition, according to the embodiment described above, the inner wall includes a first inner wall layer and a second inner wall layer. Here, the first inner wall layer corresponds to, for example, any one of the inner wall layer 145A and the inner wall layer 146A. In addition, the second inner wall layer corresponds to, for example, any one of the inner wall layer 145B and the inner wall layer 146C. A gap 165 is formed between the inner wall layer 145B and the inner wall layer 145A. Moreover, the inner wall layer 145A and the inner wall layer 145B are stacked in a direction connecting the partitions separated from each other. According to this structure, since the gap 165 between the inner wall layer 145A and the inner wall layer 145B effectively suppresses the penetration between the partitions, the mixing of the treatment liquid in the piping can be suppressed.

[0201] In addition, according to the above-described embodiment, the inner wall is provided with a third inner wall layer formed in the gap between the inner wall layer 146A and the inner wall layer 146C. Here, the third inner wall layer corresponds to the inner wall layer 146B, for example. Moreover, the inner wall layer 146B is made of metal or fluororesin. According to this structure, the inner wall layer 146B does not face any of the closed partitions 160 and 164. Therefore, it is possible to suppress the atmosphere from being contaminated by the mixing of the material for suppressing penetration into the atmosphere in the closed partition.

[0202] In addition, according to the above-described embodiment, the substrate processing device includes: a pipe 352 for supplying a processing liquid for processing a substrate W; and a liquid processing unit 31A, which is connected to the pipe 352 and is used to process the substrate W using the processing liquid. The pipe 352 includes a first tubular pipe material and a second tubular pipe material. Here, the first pipe material corresponds to the pipe material 352A, for example. In addition, the second pipe material corresponds to the pipe material 352B, for example. The pipe material 352A surrounds the flow path for the processing liquid to flow. The pipe material 352B surrounds the pipe material 352A. Moreover, a closed gap 353 is formed between the pipe material 352A and the pipe material 352B. According to this structure, since the gap 353 between the pipe material 352A and the pipe material 352B effectively suppresses the penetration inside and outside the pipe, it is possible to suppress the components of the external atmosphere (such as moisture) from mixing into the processing liquid in the pipe.

[0203] According to the above-described embodiment, the substrate processing apparatus includes a gas supply unit 354 for supplying gas into the gap 353. According to this configuration, by suppressing the humidity of the atmosphere in the gap 353 to be low, the degree of penetration of moisture contained in the atmosphere in the gap 353 into the pipe can be reduced.

[0204] In addition, according to the above-described embodiment, the substrate processing device includes: a piping 350 for supplying a processing liquid for processing a substrate W; and a liquid processing unit 31A, which is connected to the piping 350 and is used to process the substrate W using the processing liquid. In addition, the piping 350 includes a first tubular piping material and a second tubular piping material. Here, the first piping material corresponds to the piping material 350A, for example. In addition, the second piping material corresponds to the piping material 350B, for example. The piping material 350A surrounds the flow path for the processing liquid to flow. The piping material 350B is made of a material different from the piping material 350A. In addition, the piping material 350B surrounds the piping material 350A. In addition, the piping material 350B is made of a metal such as SUS or a fluororesin such as PFA, PTFE or PVDF. According to this structure, since the piping material 350B effectively suppresses the penetration inside and outside the piping, it is possible to suppress the components of the external atmosphere from mixing into the processing liquid in the piping.

[0205] In addition, according to the above-described embodiment, the piping 351 is provided with a third tubular piping material. Here, the third piping material corresponds to, for example, piping material 351C. Piping material 351C is made of a material different from piping material 351B. In addition, piping material 351C surrounds piping material 351B. According to this structure, by providing piping material 351C, piping material 351B made of metal such as SUS or fluororesin such as PFA, PTFE or PVDF will not be exposed to the atmosphere outside the piping, and therefore, it is possible to suppress the reaction that may occur between piping material 351B and the atmosphere outside the piping.

[0206] <Regarding Modifications of the Embodiments Described Above>

[0207] In the above-described embodiments, the material, size, shape, relative configuration relationship or implementation conditions of each component are sometimes also described, but these descriptions are examples of all forms and are not limited to the contents of this specification.

[0208] Therefore, numerous modifications and equivalents not shown in the examples are conceivable within the technical scope disclosed in this specification, including, for example, a case where at least one component is modified, or a case where at least one component is added or omitted.

[0209] Description of Reference Numerals

[0210] Z1 axis of rotation

[0211] TW31, TW32, TW33 treatment towers

[0212] W substrate

[0213] 1 Substrate processing device

[0214] 2 Index area

[0215] 3. Processing Area

[0216] 7 Control Unit

[0217] 21. Substrate container

[0218] 22 units

[0219] 23 Index Robot

[0220] 23A Abutment

[0221] 23B Multi-jointed arm

[0222] 23C, 23D Hands

[0223] 30 Transport area

[0224] 31, 32, 33 Processing modules

[0225] 31A, 31B, 31C, 32A, 32B, 32C, 33A, 33B, 33C Liquid Handling Unit

[0226] 41A, 41B, 41C, 42A, 42B, 42C, 43A, 43B, 43C, 44, 45, 46, 47, 48, 49 Fluid tank

[0227] 51, 52, 53 Piping Department

[0228] 51A, 51B, 51C, 51D, 52A, 52B, 52C, 53A, 53B, 53C, 350, 351, 352 piping

[0229] 51D, 52D, 53D drain pipe

[0230] 60 Flushing fluid nozzle

[0231] 62 Flushing fluid valve

[0232] 64 Washing fluid nozzle

[0233] 66 Cleaning fluid valve

[0234] 71 CPU

[0235] 72 ROM

[0236] 73 RAM

[0237] 74 Storage

[0238] 75 Bus Wiring

[0239] 76 Input

[0240] 77 Display

[0241] 141A, 141B, 141C inner wall

[0242] 144A, 144B, 145A, 145B, 146A, 146B, 146C inner wall layer

[0243] 152, 154, 160, 164, 166, 167, 168 Closed partitions

[0244] 165, 353 gap

[0245] 201, 202, 203, 354 Gas supply unit

[0246] 250 Processing Room

[0247] 250A wall

[0248] 250B Opening

[0249] 250C Gate

[0250] 251 Rotating chuck

[0251] 251A Rotating Base

[0252] 251C Rotary Axis

[0253] 251D Rotary Motor

[0254] 252 Liquid Nozzle

[0255] 253 Liquid Medicine Tank

[0256] 255 liquid delivery device

[0257] 256 Liquid Valve

[0258] 257 Circulation piping

[0259] 258 Circulation valve

[0260] 301, 302, 303 Pressure control unit

[0261] 350A, 350B, 351A, 351B, 351C, 352A, 352B Piping materials

[0262] 511 Processing Hood

[0263] 513 drain port

[0264] 515 Exhaust port

[0265] 600 cycle container.

Claims

1. A substrate processing device, comprising: a plurality of pipes for supplying a processing liquid for processing a substrate; a substrate processing unit connected to the plurality of pipes and configured to process the substrate using the processing liquid; and a pipe arrangement section for arranging a plurality of the pipes in close proximity to each other, The pipe arrangement portion includes at least one inner wall that separates at least one pipe among the plurality of pipes from the other pipes and seals the atmosphere in each of the separated sections.

2. The substrate processing apparatus according to claim 1, wherein: The pipe arrangement portion is a fluid box adjacent to the substrate processing portion.

3. The substrate processing apparatus according to claim 1 or 2, wherein: A plurality of the pipes are arranged in at least one of the partitions. The plurality of pipes in the same section are pipes for supplying the same type of processing liquid.

4. The substrate processing apparatus according to claim 1 or 2, wherein: A gas supply unit is further provided to supply gas into the partitions.

5. The substrate processing apparatus according to claim 4, wherein: The gas supplied into the partition by the gas supply unit is dry air or inert gas.

6. The substrate processing apparatus according to claim 1 or 2, wherein: further comprising a pressure control unit for controlling the pressure in the partition, The pressure control unit controls the pressure in the partition to be equal to or lower than the pressure in the pipe.

7. The substrate processing apparatus according to claim 6, wherein: The pressure control unit controls the pressure in the partition to be equal to the pressure in the pipe.

8. The substrate processing apparatus according to claim 1 or 2, wherein: The inner wall includes a first inner wall layer and a second inner wall layer, the second inner wall layer being made of a material different from that of the first inner wall layer and being stacked on the first inner wall layer. The first inner wall layer and the second inner wall layer are stacked in a direction connecting the partitions that are spaced apart from each other.

9. The substrate processing apparatus according to claim 8, wherein: The second inner wall layer is made of metal or fluororesin.

10. The substrate processing apparatus according to claim 1 or 2, wherein: The inner wall includes a first inner wall layer and a second inner wall layer forming a gap with the first inner wall layer. The first inner wall layer and the second inner wall layer are stacked in a direction connecting the partitions that are spaced apart from each other.

11. The substrate processing apparatus according to claim 10, wherein: The inner wall further comprises a third inner wall layer formed in the gap, The third inner wall layer is made of metal or fluororesin.

12. A substrate processing device comprising: A plurality of pipes for supplying a processing liquid for cleaning or etching the substrate; a substrate processing unit connected to the plurality of pipes and configured to perform a cleaning process or an etching process on the substrate using the processing liquid; and a pipe arrangement section for arranging a plurality of the pipes in close proximity to each other, The pipes in the pipe arrangement section include: a first tubular pipe material surrounding a flow path through which the treatment liquid flows; and a second tubular tubular material surrounding the first tubing material, A closed gap is formed between the first piping material and the second piping material.

13. The substrate processing apparatus according to claim 12, wherein: The pipe arrangement portion includes at least one inner wall that separates at least one pipe among the plurality of pipes from the other pipes and seals the atmosphere in each of the separated sections.

14. The substrate processing apparatus according to claim 12, wherein: A gas supply unit for supplying gas into the gap is further provided.

15. A substrate processing device comprising: a plurality of pipes for supplying a processing liquid for processing a substrate; a substrate processing unit connected to the plurality of pipes and configured to process the substrate using the processing liquid; and a pipe arrangement section for arranging a plurality of the pipes in close proximity to each other, The pipes in the pipe arrangement section include: a first tubular piping material surrounding a flow path through which the treatment liquid flows; a second tubular piping material which is made of a material different from that of the first piping material and surrounds the first piping material; and The third tubular piping material is made of a material different from that of the second piping material and surrounds the second piping material.

16. The substrate processing apparatus according to claim 15, wherein: The first piping material and the third piping material are made of PFA. The second pipe material is made of metal such as SUS or fluororesin such as PFA, PTFE, or PVDF.

17. A substrate processing method, wherein a substrate is processed using a substrate processing device, wherein the substrate processing device comprises: a substrate processing unit connected to a plurality of pipes for supplying a processing liquid and used to process the substrate using the processing liquid; and a pipe arrangement unit that arranges the plurality of pipes in a manner close to each other, The substrate processing method is characterized in that: The step of processing the substrate by the substrate processing unit using the processing liquid is provided. The pipe arrangement portion includes at least one inner wall that separates at least one pipe among the plurality of pipes from the other pipes and seals the atmosphere in each of the separated sections.

18. The substrate processing method according to claim 17, wherein: The method further includes supplying gas into the partition.

19. The substrate processing method according to claim 17 or 18, wherein: The method further includes a step of making the pressure in the partition equal to or lower than the pressure in the pipe.

20. The substrate processing method according to claim 17 or 18, wherein: The method further includes the step of making the pressure in the partition equal to the pressure in the pipe.

21. A substrate processing method, wherein a substrate processing device is used to perform a cleaning process or an etching process on a substrate, wherein the substrate processing device comprises: a substrate processing unit connected to a plurality of pipes for supplying a processing liquid and used to perform a cleaning process or an etching process on the substrate using the processing liquid; and a pipe arrangement unit which arranges a plurality of the pipes in a manner close to each other. The substrate processing method is characterized in that: The substrate processing unit performs a cleaning process or an etching process on the substrate using the processing liquid. The pipes in the pipe arrangement section include: a first tubular pipe material surrounding a flow path through which the treatment liquid flows; and a second tubular tubular material surrounding the first tubing material, A closed gap is formed between the first piping material and the second piping material.

22. The substrate processing method according to claim 21, wherein: The method further includes supplying a gas into the gap.

23. A substrate processing method, wherein a substrate is processed using a substrate processing device, wherein the substrate processing device comprises: a substrate processing unit connected to a plurality of pipes for supplying a processing liquid and used to process the substrate using the processing liquid; and a pipe arrangement unit for arranging a plurality of the pipes in a manner close to each other. The substrate processing method is characterized in that: The step of processing the substrate by the substrate processing unit using the processing liquid is provided. The pipes in the pipe arrangement section include: a first tubular piping material surrounding a flow path through which the treatment liquid flows; a second tubular piping material which is made of a material different from that of the first piping material and surrounds the first piping material; and The third tubular piping material is made of a material different from that of the second piping material and surrounds the second piping material.

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