Pasting device

Abstract

The object of the present invention is to provide a pasting device capable of flattening the surface of a film (20) pasted on a main surface (10A) of a plate-like body (10), wherein the pasting device (30) for pasting the film (20) on the plate-like body (10) comprises: a plate-like loading component (31) provided with a loading portion (31A) for loading the plate-like body (10); a plate-like pressing component (32) provided at a position opposite to the loading component (31); and a supporting component (33) provided at the outer edge of the loading portion (31A) in a manner of being located between the loading component (31) and the pressing component (32).

Description

Technical Field

[0001] The present invention relates to a sticking device for sticking a film on a plate-like body such as a semiconductor wafer. Background Art

[0002] As a plate-like body to which the film is attached, for example, a semiconductor wafer for semiconductor components can be cited. After a circuit is formed on the main surface of the semiconductor wafer, the back surface opposite to the main surface is ground to a desired thickness. When grinding the back surface, a protective film or the like is attached to the main surface of the semiconductor wafer in order to protect the circuit on the main surface.

[0003] A common pasting device includes a mounting member on which a semiconductor wafer is mounted and a pressing member such as a pasting roller provided at a position opposite to the mounting member. The pasting device is configured to past the film to the main surface by pressing the film to the main surface with a pressing member such as a pasting roller.

[0004] Here, among semiconductor wafers, there are wafers that have a plurality of bumps on the main surface, and thus the main surface becomes concavo-convex due to the tops of the bumps. If a film is pasted to such a main surface using the above-mentioned pasting device, the surface of the film pressed on the main surface becomes concavo-convex by imitating the concavo-convex caused by the tops of the bumps. Moreover, if the surface of the film becomes concavo-convex, when the semiconductor wafer is fixed to the mounting member of the pasting device through the film, unfavorable conditions such as vacuum leakage may occur. As a technology for eliminating the occurrence of such unfavorable conditions, Patent Document 1 is known.

[0005] That is, Patent Document 1 discloses a film provided with an unevenness absorbent resin layer as a film for semiconductor wafers. The unevenness absorbent resin layer, the step absorbing layer, etc. make it difficult for unevenness to occur on the surface of the film attached to the main surface.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2000-17239 Summary of the invention

[0009] Technical problem to be solved by the invention

[0010] The above-mentioned technology suppresses the generation of irregularities on the film surface by improving the film structure.

[0011] However, when the above-mentioned technique is used, vacuum leakage or other undesirable conditions may occur due to the shape of the bonding surface (main surface) of the plate-like body, etc. This undesirable condition is particularly likely to occur when the plate-like body has a step portion at the peripheral edge of the bonding surface (main surface).

[0012] The present invention has been made in view of the above-mentioned problems, and provides a sticking device which can suppress the occurrence of irregularities on the surface of a film stuck to the main surface without being affected by the shape of the main surface of a plate-like body, and can flatten the surface of the film.

[0013] Solutions for solving technical problems

[0014] As a means to solve the above-mentioned problems, the present invention is as follows.

[0015] [1] The gist of the invention of the sticking device described in claim 1 is that it is a sticking device for sticking a film on a plate-like body, comprising:

[0016] A plate-shaped mounting member is provided with a mounting portion on which the plate-shaped body is mounted;

[0017] a plate-shaped pressing member provided at a position opposite to the placing member; and

[0018] A supporting member is provided at an outer edge of the placing portion so as to be located between the placing member and the pressing member.

[0019] [2] The gist of the invention described in claim 2 is that, in the invention of the sticking device described in claim 1, the pressing member has a function of pressing the film against the main surface of the plate-like body,

[0020] The supporting member has a function of supporting an edge portion of the film when the pressing member presses the film.

[0021] [3] The gist of the invention described in claim 3 is that, in the invention of the sticking device described in claim 1 or 2, there is further provided a placement mechanism for placing the film on the main surface of the plate-like body.

[0022] [4] The gist of the invention described in claim 4 is that, in the invention of the sticking device according to any one of claims 1 to 3, a heating mechanism for heating the film is further provided.

[0023] [5] The gist of the invention described in Technical Solution 5 is that, in the invention of the pasting device described in any one of Technical Solutions 1 to 4, the pasting device has the function of clamping the edge of the film between the supporting part and the pressing part and compressing the edge in the thickness direction thereof.

[0024] [6] The gist of the invention described in claim 6 is that, in the invention of the pasting device described in any one of claims 1 to 5, the plate-like body has a notch-shaped step portion at the peripheral edge of the main surface on which the film is pasted,

[0025] The supporting member is provided at an outer edge of the mounting portion corresponding to the step portion.

[0026] [7] The gist of the invention described in Technical Solution 7 is that, in the invention of the pasting device described in any one of Technical Solutions 1 to 6, the plate-like body is a semiconductor wafer, and the film is a protective film for the semiconductor wafer.

[0027] [8] The gist of the invention described in claim 8 is that, in the invention of the pasting device described in claim 7, the semiconductor wafer has a first region and a second region on the main surface, the first region being provided with bumps, and the second region being a region including at least a portion of the periphery of the main surface and not provided with bumps,

[0028] The notch-shaped step portion is formed by the second region.

[0029] [9] The gist of the invention of the pasting device described in claim 9 is that it is a pasting device for pasting a film on a plate-like body.

[0030] The plate-like body has a step on the main surface to which the film is attached,

[0031] The pasting device comprises:

[0032] A plate-shaped placing member on which the placing portion of the plate-shaped body is placed and a plate-shaped pressing member provided at a position facing the placing member are provided.

[0033] Also available:

[0034] an arrangement mechanism provided between the placement member and the pressing member in order to arrange the film on the main surface; and

[0035] The processing means forms a relatively thick portion corresponding to the step on the film disposed on the main surface.

[0036]

[10] The gist of the invention described in claim 10 is that, in the invention of the pasting device described in claim 9, a heating mechanism for heating the film is further provided.

[0037]

[11] The gist of the invention described in Technical Solution 11 is that, in the invention of the pasting device described in Technical Solution 9 or 10, the plate-like body is a semiconductor wafer, and the film is a protective film for the semiconductor wafer.

[0038] Effects of the Invention

[0039] According to the sticking device of the present invention, the film surface can be flattened without being affected by the shape of the main surface of the plate-like body. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] [Figure 1 ] is a front view illustrating the pasting device of the first invention.

[0041] [ Figure 2 ] is a top view illustrating the pasting device of the first invention.

[0042] [ Figure 3 ] is an enlarged sectional view illustrating the pasting device of the first invention.

[0043] [ Figure 4 ] is an enlarged cross-sectional view illustrating an example of a change in the support component.

[0044] [ Figure 5 ](a) and (b) are enlarged cross-sectional views illustrating the positional relationship of the support surfaces in the support component.

[0045] [ Figure 6 ] (a) is a top view illustrating a semiconductor wafer as a plate-like body of the present invention, and (b) is a Figure 6 (a) is an enlarged cross-sectional view of the line 1B-1B.

[0046] [ Figure 7 ] (a) is a top view illustrating a semiconductor wafer as a plate-like body of the present invention, and (b) is a Figure 7 (a) is an enlarged cross-sectional view of the line 11B-11B.

[0047] [ Figure 8 ] is an enlarged cross-sectional view illustrating a protective film as a film of the present invention.

[0048] [ Fig. 9 ] is an enlarged cross-sectional view illustrating the configuration process of the first mode of use in the first invention.

[0049] [ Fig.10 ] is an enlarged cross-sectional view illustrating the pasting process of the first mode of use in the first invention.

[0050] [ Fig.11 ] is an enlarged cross-sectional view illustrating the compression process of the first mode of use in the first invention.

[0051] [ Fig.12 ] is an enlarged cross-sectional view illustrating a semiconductor chip after a protective film is pasted using the pasting device of the first invention.

[0052] [ Fig.13 ] is an enlarged cross-sectional view illustrating a semiconductor chip after a protective film is attached using a conventional attaching device.

[0053] [ Fig.14] relates to the second mode of use in the first invention, (a) is an enlarged sectional view illustrating the configuration process, and (b) is an enlarged sectional view illustrating the compression process.

[0054] [ Fig.15 ] In the first mode of the pasting device related to the second invention, (a) is a sectional view illustrating the processing mechanism, and (b) is an enlarged sectional view.

[0055] [ Fig.16 ]A first aspect of the pasting device according to the second invention is an enlarged cross-sectional view for explaining the configuration process.

[0056] [ Fig.17 ]A first aspect of the pasting device according to the second invention is an enlarged cross-sectional view for illustrating the pasting process.

[0057] [ Fig.18 ]A second mode of the pasting device related to the second invention, (a) is an enlarged sectional view illustrating the processing step, and (b) is an enlarged sectional view illustrating the configuration step.

[0058] [ Fig.19 ] is a graph illustrating the results of measuring the unevenness of the protective film surface in the examples. DETAILED DESCRIPTION

[0059] The present invention is described below with reference to the accompanying drawings. The matters shown here are illustrative matters and matters used to illustratively illustrate the embodiments of the present invention, and are described for the purpose of providing an explanation that is considered to be the most effective and easy to understand the principles and conceptual features of the present invention. At this point, it is necessary for a fundamental understanding of the present invention, and it is not intended to show the structural details of the present invention to a certain extent. The description combined with the drawings makes it clear to those skilled in the art how to actually implement several ways of the present invention.

[0060] [1] Pasting device (first invention)

[0061] The pasting device of the first invention is a pasting device 30 for pasting a film (20) on a plate-like body (10). Figure 1 as well as Figure 2 As shown, the sticking device 30 includes a placement member 31 , a pressing member 32 , and a supporting member 33 .

[0062] The placing member 31 is in a plate shape and is provided with a placing portion 31A on which the plate-shaped body (10) is placed.

[0063] The pressing member 32 is plate-shaped and is provided at a position facing the placing member 31 .

[0064] The supporting member 33 is located between the placing member 31 and the pressing member 32. The supporting member 33 is provided at the outer edge of the placing portion 31A.

[0065] It should be noted that in Figure 1 In FIG. 1 , the plate-like body (10) and the mounting portion 31A are indicated by dotted lines. Figure 2 In FIG. 1 , the pressing member 32 is indicated by a two-dot chain line.

[0066] In the following description, the main surface 10A of the plate-like body (10) refers to the surface of the plate-like body (10) that becomes the bonding surface of the film (20). Figure 1 , the main surface 10A of the plate-shaped body (10) is the surface (upper surface) of the plate-shaped body (10).

[0067] Specifically, the sticking device 30 includes a sticking mechanism that fixes the plate-like body (10) and presses and sticks the film (20) onto the main surface 10A of the plate-like body (10).

[0068] The sticking mechanism includes the placement member 31 and the pressing member 32 .

[0069] The placement member 31 can have a function of fixing the plate-like body (10) placed on the placement portion 31A.

[0070] The pressing member 32 can have a function of pressing the film (20) against the main surface 10A of the plate-like body (10) placed on the placement portion 31A.

[0071] The supporting member 33 can have the function of supporting the edge (peripheral portion) of the film (20) when the film (20) is pressed by the pressing member 32. The edge of the film (20) supported by the supporting member 33 is sandwiched between the pressing member 32 and the supporting member 33, thereby being compressed in the thickness direction thereof.

[0072] That is, in the sticking device 30 , the sticking mechanism may include a compression mechanism. The compression mechanism is a mechanism for compressing the edge of the film ( 20 ) in the thickness direction thereof. The compression mechanism includes the pressing member 32 and the supporting member 33 .

[0073] The sticking device 30 may further include a placement mechanism 34. The placement mechanism 34 is a mechanism for placing the film (20) on the main surface 10A of the plate-like body (10).

[0074] There is no particular limitation on the configuration of the arrangement mechanism 34. The arrangement mechanism 34 may include, for example, a guide roller 35A and a pair of upper and lower traction rollers 35B (see Figure 1 ).

[0075] The guide roller 35A is provided to be offset outward from a position just above the placement portion 31A. The guide roller 35A can have a function of guiding the film (20) between the placement member 31 and the pressing member 32.

[0076] The pair of traction rollers 35B are opposite to the guide rollers 35A in the horizontal direction and are arranged to be offset outward from the position just above the above-mentioned loading portion 31A. The pair of traction rollers 35B can hold the film (20) between each other and traction. That is, the pair of traction rollers 35B can have the function of arranging the film (20) guided by the guide rollers 35A between the loading member 31 and the pressing member 32 on the main surface 10A.

[0077] In addition, the sticking device 30 may further include a heating mechanism. The heating mechanism is a mechanism for heating the film (20).

[0078] The structure of the heating mechanism is not particularly limited. The heating mechanism can be provided by, for example, embedding a heater 36 in the above-mentioned mounting member 31 (see Figure 1 ).

[0079] Hereinafter, the placement member 31 , the pressing member 32 , and the supporting member 33 of the sticking device 30 will be described in detail.

[0080] (1) Mounting parts

[0081] The placement member 31 may be any member that is plate-shaped and has a placement portion 31A on which the plate-shaped body (10) is placed, and the type, structure, etc. are not particularly limited.

[0082] Usually, a chuck table can be used as the mounting member 31. When a chuck table is used as the mounting member 31, the mounting portion 31A can be a chuck region provided on the chuck table.

[0083] In addition, in the chuck table, a vacuum adsorption table is preferably used as the mounting member 31. The vacuum adsorption table can appropriately fix the plate-like body (10) and can prevent the plate-like body (10) from being contaminated or damaged.

[0084] (2) Pressing parts

[0085] The pressing member 32 may be any member capable of pressing the film (20) against the main surface 10A of the plate-like body (10), and its shape, structure, etc. are not particularly limited. Figure 2 As shown by the two-dot chain line, the shape of the pressing member 32 can be circular in a plan view.

[0086] The pressing member 32 is provided above the placement portion 31A. The pressing member 32 is configured to be able to approach or move away from the placement portion 31A.

[0087] There is no particular limitation on the structure of making the pressing member 32 approach or move away from the mounting portion 31A. For example, the pressing member 32 can be configured so that one end edge is rotatably mounted on the pasting device 30, and approaches the mounting portion 31A when it is pushed downward, and moves away from the mounting portion 31A when it is pushed upward.

[0088] In addition, the pressing member 32 can also be configured to be installed on a rail provided on the pasting device 30 in a manner extending in the thickness direction of the plate-like body (10) so as to be freely raised and lowered, and to approach the mounting portion 31A when it is lowered, and to move away from the mounting portion 31A when it is raised. In addition, in addition to this, the pressing member 32 can also be configured to be fixed to a position above the mounting portion 31A, so that the mounting member 31 is configured to be freely raised and lowered, and the mounting portion 31A is brought close to the pressing member 32 by raising the mounting member 31, and the mounting portion 31A is moved away from the pressing member 32 by lowering the mounting member 31.

[0089] The pressing surface 32A of the pressing member 32 that contacts the film (20) is preferably a flat surface (see Figure 1 ). When the pressing surface 32A is a flat surface, the surface of the film (20) pressed by the pressing surface 32A can be made flat.

[0090] The hardness of the pressing surface 32A is preferably 2.5 to 8.5 in Mohs hardness, more preferably 3 to 7, and even more preferably 4 to 6. In this case, deformation of the pressing surface 32A can be suppressed, and the pressing surface 32A can be maintained as a flat surface.

[0091] The material of the pressing surface 32A is not particularly limited. For example, from the viewpoint of satisfying the above-mentioned Mohs hardness, the material of the pressing surface 32A may be a metal such as iron, copper, aluminum, steel, stainless steel, aluminum alloy, or an inorganic material such as glass or ceramic.

[0092] The pressing member 32 can be configured such that, for example, only the pressing surface 32A is formed of the above-mentioned inorganic material, and the portion other than the pressing surface 32A is formed of a synthetic resin.

[0093] (3) Support components

[0094] The supporting member 33 is not particularly limited in terms of structure and the like.

[0095] The shape of the support member 33 is not particularly limited as long as it can be set at the outer edge of the mounting portion 31A and can support the edge (peripheral portion) of the film (20). Examples of the shape of the support member 33 include a circular ring shape, a fan shape, an arc shape, etc. when viewed from above. Figure 2 As shown, the support member 33 can be configured to have a plan view shape in the form of a ring that surrounds the entire plate-like body (10) inside.

[0096] The material of the support member 33 is not particularly limited. The support member 33 is preferably a member that, as the above-mentioned compression mechanism, clamps the edge portion (peripheral portion) of the film (20) together with the pressing member 32 and compresses it in the thickness direction. As the material of such a support member 33, in addition to the inorganic materials such as metals listed for the pressing member 32, thermoplastic resins such as engineering plastics and super engineering plastics, thermosetting resins, etc. can also be exemplified.

[0097] In the supporting member 33, the supporting surface 33A of the edge portion (peripheral portion) of the supporting film (20) is, for example, Figure 3 As shown, it can be set to be parallel to the pressing surface 32A of the pressing member 32. In this case, the edge portion (peripheral portion) of the film (20) can be appropriately compressed between the support member 33 and the pressing member 32.

[0098] Or, if Figure 4 As shown, the support surface 33A can be inclined toward the mounting portion 31A side (the main surface 10A side of the plate-like body ( 10 )).

[0099] like Figure 3 As shown, the support member 33 preferably needs a certain width W1 when viewed from above. The width W1 is usually preferably 1 to 20 mm, more preferably 2 to 15 mm, and further preferably 3 to 10 mm. When the width W1 is within this range, the support member 33 can appropriately support the edge (peripheral portion) of the membrane (20) and compress it in the thickness direction.

[0100] The position of the support surface 33A of the support member 33 is not particularly limited. Generally, the position of the support surface 33A can be set in consideration of the positional relationship with the main surface 10A of the plate-like body (10).

[0101] Here, regarding the positional relationship between the support surface 33A and the main surface 10A, Figure 3 As shown, the gap between the main surface 10A of the plate-like body (10) and the pressing surface 32A of the pressing member 32 is set to C1, and the gap between the supporting surface 33A of the supporting member 33 and the pressing surface 32A is set to C2.

[0102] For example, in order to properly function the compression mechanism having the support member 33 and the pressing member 32, it is preferably set to C1>C2. In this case of C1>C2, the support surface 33A of the support member 33 is arranged at a position higher than the flat surface (blank area surface 101A of the semiconductor wafer) in the main surface 10A of the plate-like body (10).

[0103] In addition, the above-mentioned gap C1 and gap C2 may be set to C1=C2 or C1<C2.

[0104] Regarding the positional relationship between the support surface 33A and the main surface 10A, use Figure 5 (a) and (b) are described in more detail.

[0105] Here, the plate-like body (10) is a semiconductor wafer having a blank area surface 101A on a main surface 10A. Figure 5 In (a) and (b), the position of the blank area surface 101A is denoted as P1, the position of the support surface 33A of the support member 33 is denoted as P2, and the distance between these P1 and P2 is denoted as d1 (μm) or d2 (μm).

[0106] When C1 and C2 satisfy C1>C2 (refer to Figure 5 (a)), preferably 50≤d1(μm)≤2000, more preferably 100≤d1(μm)≤1000.

[0107] When C1 and C2 satisfy C1<C2 (refer to Figure 5 (b)) is preferably set to 0<d2(μm)<400, more preferably set to 10≤d2(μm)≤300, and further preferably set to 50≤d2(μm)≤200.

[0108] In the support member 33, for example, Figure 3 As shown, the inner peripheral surface 33B can be set to be perpendicular to the surface of the mounting portion 31A. In this case, the inner peripheral surface 33B of the support member 33 is also substantially perpendicular to the main surface 10A of the plate-like body (10) arranged on the mounting portion 31A. The support member 33 whose inner peripheral surface 33B is substantially perpendicular to the main surface 10A can appropriately sandwich the edge (peripheral portion) of the film (20) arranged on the main surface 10A between the support member 33 and the pressing member 32, or press against the inner peripheral surface 33B of the support member 33.

[0109] In addition, the supporting member 33 preferably has the shortest distance between the inner peripheral surface 33B and the side surface (peripheral surface) of the plate-like body (10) when viewed from above to be less than a certain value. Figure 3 As shown, the shortest distance between the inner peripheral surface 33B and the side surface (peripheral surface) of the plate-like body (10) is set as the gap C3. Specifically, the gap C3 is preferably less than 1 mm, more preferably less than 0.5 mm, and further preferably less than 0.3 mm. In addition, it is most preferred that the gap C3 is 0 mm, that is, the side surface (peripheral surface) of the plate-like body (10) is in contact with the inner peripheral surface 33B of the support member 33.

[0110] (4) Plate-shaped body

[0111] The above-mentioned plate-like body (10) will be described in detail.

[0112] The plate-like body (10) is not particularly limited as long as it is a plate-like body provided to the pasting device 30 for pasting the film (20) on the main surface 10A. Examples of such a plate-like body (10) include semiconductor wafers, optical lenses, semiconductor packages, and wafers formed by stacking chips. As the plate-like body (10), a semiconductor wafer is preferably used.

[0113] As the plate-like body (10) provided for the above-mentioned sticking device 30, it is preferable that the plate-like body has a notch-like step portion at the peripheral edge of the main surface 10A for sticking the film (20).

[0114] That is, the pasting device 30 is provided with a compression mechanism having the above-mentioned pressing member 32 and the above-mentioned supporting member 33. The compression mechanism is a mechanism for compressing the edge portion of the film (20) in the thickness direction thereof. Therefore, the pasting device 30 provided with the compression mechanism can fill the step of the peripheral portion of the main surface 10A by compressing the edge portion of the film (20) in a manner corresponding to the above-mentioned step portion to deform the edge portion.

[0115] As the plate-like body ( 10 ) having the notch-like step portion at the peripheral edge of the main surface 10A, a semiconductor wafer having the bumps 11 described below is particularly useful.

[0116] It should be noted that the semiconductor wafer is not particularly limited in terms of material or shape. Generally, a semiconductor wafer is made of silicon and is formed in a disk shape.

[0117] Furthermore, the entire surface of the semiconductor wafer having the bumps 11 is the main surface 10A. That is, the main surface 10A of the semiconductor wafer includes the surface of the semiconductor wafer and the surface of the bumps 11.

[0118] In addition, in the semiconductor wafer, the surface opposite to the main surface 10A is referred to as the back surface.

[0119] like Figure 6 (a), (b) and Figure 7 As shown in (a) and (b), the semiconductor wafer has a first region 12 where the bumps 11 are arranged and a second region 13 where the bumps 11 are not arranged on the main surface 10A.

[0120] A notch-shaped step portion is formed by the second region 13 at the peripheral edge portion of the main surface 10A of the semiconductor wafer.

[0121] The second region 13 includes a peripheral region 13A and a blank region 13B.

[0122] The peripheral region 13A is a region constituting the periphery of the semiconductor wafer. In other words, the peripheral region 13A is a region forming the periphery of the main surface 10A.

[0123] Specifically, the semiconductor wafer is provided with a chamfered portion 14 at the periphery in order to prevent chipping and cracking of the periphery. The periphery region 13A is a region including the chamfered portion 14.

[0124] Furthermore, no bumps are arranged in the peripheral region 13A including the chamfered portion 14 .

[0125] The blank area 13B can be provided with bumps, but is actually an area where no bumps are provided.

[0126] Specifically, the blank area 13B is a region obtained by removing the peripheral area 13A from the second area 13 .

[0127] The shape (planar shape) of each of the above regions is not particularly limited.

[0128] like Figure 6 As shown in (a), the first region 12 can be provided in a substantially circular shape in a plan view at a substantially central portion of the main surface 10A.

[0129] In addition, if Figure 7 As shown in (a), the first region 12 can be provided in a substantially central portion of the main surface 10A so as to have a polygonal shape in a plan view.

[0130] It should be noted that in order to facilitate understanding of the first area 12 and the second area 13, Figure 6 (a) and Figure 7 In (a), the boundaries of these areas are indicated by double-dashed lines.

[0131] For example, Figure 6 (a) and Figure 7 As illustrated in (a) of FIG. 1 , the second region 13 can be provided in a shape surrounding the first region 12 .

[0132] Furthermore, the shape of the peripheral region 13A constituting the second region 13 can be set to be, for example, a substantially annular shape in a plan view so as to surround the first region 12 inside (see Figure 6 as well as Figure 7 ).

[0133] like Figure 6 As shown in (a), the shape (planar shape) of the blank area 13B can be set to be an arcuate shape. That is, the blank area 13B can be set to be set on the left side of the main surface 10A, and the peripheral area 13A extends toward the center of the main surface 10A in an arcuate shape. Such a blank area 13B can be used for the purpose of displaying (for example, engraving) various information such as the serial number and manufacturing number of the semiconductor chip. Therefore, Figure 6 The arc-shaped blank area 13B in (a) can also be called a recognition area.

[0134] In addition, if Figure 7 As shown in (a), the shape (planar shape) of the blank area 13B can be formed to surround the first area 12 from all sides. More specifically, the shape of the blank area 13B can be formed to be a shape in which four arc shapes are connected. Such a blank area 13B can be used as an area where the bump 11 is not arranged, for example, because errors are likely to occur during productization.

[0135] and then, Figure 7 The blank area 13B of (a) can also be referred to as an area formed when the size of the chip cut out from the semiconductor wafer is large. That is, when the size of the chip is small, the first area 12 is Figure 6 (a) is substantially circular in plan view. On the other hand, when the chip size is large, the first region 12 is Figure 7 (a) is a substantially polygonal shape in a plan view. Furthermore, when the first region 12 is substantially polygonal in a plan view, the first region 12 is surrounded by a plurality of Figure 7 (a) The blank area 13B is formed. Figure 7 In the case of the blank area 13B of (a), the chip size is, for example, 100 mm. 2 above.

[0136] It should be noted that, in the following text, the surface of the blank area 13B is described as "blank area surface 101A".

[0137] Figure 6 (b) and Figure 7 The average height H1 of the bumps 11 on the main surface 10A shown in (b) is not particularly limited. The average height H1 can be arbitrarily set according to the type of bumps 11 such as plated bumps, ball bumps, printed bumps, etc. Generally, the average height H1 of the bumps 11 on the main surface 10A is preferably less than 350 μm, more preferably in the range of 5 to 250 μm, and further preferably in the range of 10 to 150 μm.

[0138] The ratio of the area of ​​the second region 13 to the total area of ​​the main surface 10A is not particularly limited. The ratio can be arbitrarily set according to the size of the blank region 13B. For example, the ratio is preferably less than 30%, more preferably 23% or less, and further preferably 15% or less.

[0139] The ratio of the area of ​​the peripheral region 13A to the total area of ​​the main surface 10A is not particularly limited, but is usually preferably 10% or less, more preferably 8% or less, and even more preferably 5% or less.

[0140] The ratio of the area of ​​blank region 13B to the total area of ​​main surface 10A is not particularly limited. Generally, the ratio can be set arbitrarily, but is preferably 20% or less, more preferably 15% or less, and further preferably 10% or less.

[0141] In the second region 13, both the peripheral region 13A and the blank region 13B have a notch-shaped step portion between the first region 12. By forming depressions, pits, etc. that imitate the step portion on the surface of the film (20), vacuum errors, cracks, ruptures, and other undesirable conditions may occur.

[0142] When comparing peripheral region 13A and blank region 13B, the ratio of the area of ​​blank region 13B to the total area of ​​main surface 10A is larger than that of peripheral region 13A. Therefore, large depressions and pits are more likely to be formed on the surface of the protective film than peripheral region 13A, and the above-mentioned inconvenience is more likely to occur.

[0143] Therefore, in the following description, unless otherwise specified, the blank area 13B is cited as the second area 13 for explanation.

[0144] (5) Membrane

[0145] The above-mentioned film (20) will be described in detail.

[0146] The film (20) can be provided to the pasting device 30 for pasting to the main surface 10A of the plate-like body (10), and there is no particular limitation on the shape, type, structure, etc. Such a film (20) may be a protective film, a dicing film, or other film used for manufacturing semiconductor components, a protective film for optical lenses, or the like.

[0147] Regarding the film (20), when the plate-like body (10) is a semiconductor wafer, particularly when the plate-like body (10) is a semiconductor wafer having bumps 11 on the above-mentioned main surface 10A, the protective film described below is useful.

[0148] The protective film is a film used when manufacturing semiconductor components. More specifically, the protective film is a film used in a back grinding process in which the back surface of a semiconductor wafer is ground to a desired thickness when manufacturing semiconductor components.

[0149] like Figure 8 As shown, the protective film may be configured to include a base layer 21 and an adhesive material layer 22 .

[0150] The base layer 21 is a layer provided for the purpose of improving the properties such as the handling properties, mechanical properties, and heat resistance of the protective film.

[0151] The adhesive material layer 22 is a layer provided for the purpose of attaching and fixing the protective film to the main surface 10A of the semiconductor wafer.

[0152] The unevenness absorbing layer 23 is a layer having unevenness absorbing properties exhibited by the development of fluidity or plasticity. The unevenness absorbing layer 23 is provided for the purpose of absorbing the unevenness of the bumps 11 arranged on the main surface 10A and smoothing the surface of the protective film.

[0153] The average thickness H2 of the protective film preferably satisfies the relationship of 0.5≦H2 / H1 with the average height H1 of the bumps 11 .

[0154] There is no particular limit on the upper limit of H2 / H1 from the viewpoint that the protective film absorbs and appropriately eliminates the unevenness of the bump 11 and the step caused by the height difference between the first region 12 and the second region 13 by its film thickness. From the viewpoint of suppressing the loss of material caused by the increase in the average thickness H2 of the protective film and thus appropriately maintaining the formability of the protective film, H2 / H1 is usually 10 or less (H2 / H1≤10), preferably 5 or less (H2 / H1≤5), and more preferably 4 or less (H2 / H1≤4).

[0155] Specifically, the average thickness H2 of the protective film is preferably 30 μm or more, more preferably 100 μm or more, and further preferably 200 μm or more.

[0156] The average height H1 is the average of the measured heights of 1 / 10 of the bumps randomly selected from the total number of bumps, and the average thickness H2 is the average of the measured thicknesses of 10 locations of the film selected at a distance of 2 cm or more from each other.

[0157] Hereinafter, each layer of the protective film will be described.

[0158] (5a) Grassroots

[0159] The material used for the base layer 21 is not particularly limited as long as it has a mechanical strength that can withstand an external force applied when grinding the semiconductor wafer in a back grinding step.

[0160] Typically, a synthetic resin film is used as the material of the base layer 21 .

[0161] As the above-mentioned synthetic resin, one or more thermoplastic resins selected from polyolefins such as polyethylene, polypropylene, poly(4-methyl-1-pentene), and poly(1-butene); polyesters such as polyethylene terephthalate and polybutylene terephthalate; polyamides such as nylon-6, nylon-66, and poly(m-xylylene adipamide); polyacrylates; polymethacrylates; polyvinyl chloride; polyetherimide; ethylene-vinyl acetate copolymers; polyacrylonitrile; polycarbonate; polystyrene; ionomers; polysulfones; polyethersulfones; and polyphenylene ethers can be listed.

[0162] Among these synthetic resins, from the viewpoint of suitably protecting the semiconductor wafer during the back grinding process, it is preferred to select one or more of polypropylene, polyethylene terephthalate, polyamide, and ethylene-vinyl acetate copolymer, and it is more preferred to select one or more of polyethylene terephthalate and ethylene-vinyl acetate copolymer.

[0163] In addition, as additives, plasticizers, softeners (mineral oil, etc.), fillers (carbonates, sulfates, titanates, silicates, oxides (titanium oxide, magnesium oxide), silicon dioxide, talc, mica, clay, fiber fillers, etc.), antioxidants, light stabilizers, antistatic agents, lubricants, colorants, etc. may be added to the synthetic resin. These additives may be used alone or in combination of two or more.

[0164] The above-mentioned film may be any of unstretched films, uniaxially stretched films, biaxially stretched films or other stretched films, regardless of whether the film is stretched or not. However, a stretched film is preferred from the viewpoint of improving mechanical strength.

[0165] In addition, the film may be either a single-layer film or a multi-layer film having a plurality of layers.

[0166] From the viewpoint of improving adhesion with the uneven absorption layer 23 and the like, it is preferable to use a surface-treated film for the base layer 21. Specific examples of the surface treatment include corona treatment, plasma treatment, primer treatment, and primer coating treatment.

[0167] The thickness of the base layer 21 is not particularly limited, but is preferably 10 to 200 μm, more preferably 20 to 150 μm, and even more preferably 30 to 100 μm from the viewpoint of obtaining good characteristics.

[0168] (5b) Adhesive material layer

[0169] The material of the adhesive material layer 22 is not particularly limited, and a material containing at least an adhesive main agent can be used. Examples of the adhesive main agent include (meth)acrylic adhesives, silicone adhesives, urethane adhesives, and rubber adhesives.

[0170] Furthermore, the material of the adhesive material layer 22 may contain a cross-linking agent in addition to the adhesive main agent.

[0171] The material of the adhesive material layer 22 can be any one of an energy-ray-curable adhesive material that can be cured by energy rays and an energy-uncurable adhesive material that cannot be cured by energy rays. Among them, from the viewpoint that the adhesive material layer 22 can be cured by energy ray irradiation and the adhesive force can be reduced, so that the protective film can be peeled off from the main surface 10A without residual adhesive, the energy-ray-curable adhesive material is preferably used as the material of the adhesive material layer 22.

[0172] The type of energy ray of the energy ray curing type adhesive material is not particularly limited, and examples thereof include ultraviolet rays, electron beams, infrared rays, and the like.

[0173] In addition, the energy-ray-curable adhesive material may also contain, in addition to the adhesive main agent, a compound having a carbon-carbon double bond in the molecule and a photopolymerization initiator capable of initiating polymerization of the curable compound under the action of energy rays. The curable compound is preferably a monomer, oligomer, or polymer having a carbon-carbon double bond in the molecule and curable by free radical polymerization.

[0174] The adhesive force of the adhesive material layer 22 is not particularly limited. From the viewpoint of ensuring good adhesion to the semiconductor wafer and suppressing the residual adhesive on the semiconductor wafer during peeling, it is preferably pasted on the surface of the silicon wafer and left for 60 minutes. When peeled from the surface of the silicon wafer, the adhesive force to the silicon wafer measured according to JIS Z0237 is 0.1 to 10 N / 25 mm (measured under an environment of 23° C. and 50% relative humidity). The adhesive force is more preferably 0.2 to 9 N / 25 mm, and further preferably 0.3 to 8 N / 25 mm.

[0175] The thickness of the adhesive material layer 22 is not particularly limited, but is preferably 1 to 50 μm, more preferably 2 to 45 μm, and even more preferably 3 to 40 μm from the viewpoint of being able to exert appropriate adhesive strength and be peeled off without residual adhesive.

[0176] (5c) Concavoconvex absorption layer

[0177] The material of the unevenness absorbing layer 23 is not particularly limited as long as it has unevenness absorbing properties due to the development of fluidity or plasticity.

[0178] The material of the unevenness absorbing layer 23 is generally a thermoplastic resin.

[0179] Specific examples of thermoplastic resins include olefin resins, ethylene-polar monomer copolymers, ABS resins, vinyl chloride resins, vinylidene chloride resins, (meth) acrylic resins, polyamide resins, fluorine resins, polycarbonate resins, polyester resins, etc. Among them, from the viewpoint of good unevenness absorption, at least one selected from olefin resins and ethylene-polar monomer copolymers is preferred.

[0180] Examples of olefin-based resins include linear low-density polyethylene (LLDPE), low-density polyethylene, high-density polyethylene, polypropylene, ethylene-α-olefin copolymers containing ethylene and α-olefins having 3 to 12 carbon atoms, propylene-α-olefin copolymers containing propylene and α-olefins having 4 to 12 carbon atoms, ethylene-cyclic olefin copolymers, ethylene-α-olefin-cyclic olefin copolymers, and the like.

[0181] Examples of ethylene-polar monomer copolymers include ethylene-unsaturated carboxylic acid ester copolymers such as ethylene-ethyl (meth)acrylate copolymers, ethylene-methyl (meth)acrylate copolymers, ethylene-propyl (meth)acrylate copolymers, and ethylene-butyl (meth)acrylate copolymers; and ethylene-vinyl ester copolymers such as ethylene-vinyl acetate copolymers, ethylene-vinyl propionate copolymers, ethylene-vinyl butyrate copolymers, and ethylene-vinyl stearate copolymers.

[0182] The above-mentioned thermoplastic resins may be used alone or in combination of two or more.

[0183] The density of the unevenness absorbing layer 23 is not particularly limited, but is preferably 800 to 990 kg / m from the viewpoint of the balance between the softness of unevenness absorbing property and the rigidity related to the durability in the back grinding step (rigidity and flexibility). 3 , more preferably 830 to 980 kg / m 3 , more preferably 850 to 970 kg / m 3 .

[0184] The thickness of the uneven absorption layer 23 is not particularly limited as long as it is a thickness that can exert the uneven absorption properties of the uneven shape of the bump 11 and the steps caused by the height difference between the first area 12 and the second area 13. From the viewpoint of being able to appropriately exert the uneven absorption properties, it is preferably 20 μm or more, more preferably 80 μm or more, and further preferably 170 μm or more.

[0185] The storage elastic modulus G'(60) of the unevenness absorbing layer 23 at 60°C is preferably 0.05×10 6 ~1.0×10 6Pa, more preferably 0.075×10 6 ~0.5×10 6 Pa.

[0186] The storage modulus G'(25) of the unevenness absorbing layer 23 at 25°C is preferably 4.0×10 6 ~7.0×10 6 Pa, more preferably 4.5×10 6 ~6.5×10 6 Pa.

[0187] Regarding the elastic modulus ratio G'(60) / G'(25) between the storage modulus G'(60) and the storage modulus G'(25) of the concave-convex absorption layer 23, from the viewpoint of being able to exhibit good concave-convex absorption properties and maintaining good adhesion to the main surface 10A, preferably G'(60) / G'(25)<0.1, more preferably G'(60) / G'(25)≤0.08, and further preferably G'(60) / G'(25)≤0.05.

[0188] The storage modulus G' was measured at 25°C for G'(25) and at 60°C for storage modulus G'(60) using a dynamic viscoelasticity measuring apparatus (eg, Rheometrics, model "RMS-800"). The measurement frequency was 1 Hz and the strain was 0.1 to 3%.

[0189] (5d) Other layers

[0190] The protective film is not limited to the structure having the above-mentioned base layer 21, adhesive material layer 22 and uneven absorbing layer 23, and may have other layers between the base layer 21 and the uneven absorbing layer 23 or between the uneven absorbing layer 23 and the adhesive material layer 22.

[0191] As other layers, an interface strength improving layer for improving the interface strength with the adhesive material layer 22, a migration preventing layer for suppressing the migration of low molecular weight components to the adhesive surface of the adhesive material layer 22, an antistatic layer for preventing the protective film from being charged, etc. can be listed. Only one of them can be used, or two or more of them can be used in combination.

[0192] (6) First Mode of Use of the Adhesive Device 30

[0193] As a first usage mode of the sticking device 30, a case of sticking the film (20) to the plate-like body (10) using the sticking device 30 will be described in detail.

[0194] It should be noted that in the following description, the plate-like body ( 10 ) is a semiconductor wafer having bumps 11 on the above-mentioned main surface 10A.

[0195] In the following description, the film (20) is the above-mentioned protective film.

[0196] The pasting process using the pasting device 30 includes: a placement process using the placement mechanism 34 (see Fig. 9 ) and the pasting process using the pasting mechanism (refer to Fig.10 ). In addition, the pasting process includes a compression process using the above-mentioned compression mechanism (refer to Fig.11 ).

[0197] The semiconductor wafer to which the protective film is attached by the attaching device 30 is made into a desired thickness in the back grinding process, is singulated, and is subjected to various processing to become a semiconductor component. That is, when the plate-like body (10) is used as a semiconductor wafer, the attaching device 30 is included in the manufacturing device of the semiconductor component.

[0198] Hereinafter, each step of pasting by the pasting device 30 will be described.

[0199] (6a) Configuration process

[0200] In the above configuration process, if Fig. 9 As shown, a protective film is supplied onto the main surface 10A of the semiconductor wafer.

[0201] In this placement step, the supplied protective film is placed so as to cover the main surface 10A of the semiconductor wafer.

[0202] The method of supplying the protective film by the placement mechanism 34 is not particularly limited, and either a batch method of supplying protective films one by one or a continuous method of continuously supplying protective films can be used. Fig. 9 The protective film is supplied in batches.

[0203] Alternatively, the protective film may be supplied by cutting it with a cutter (not shown) or the like so that the shape thereof becomes a circular shape in plan view corresponding to the main surface 10A.

[0204] exist Fig. 9 In the arrangement step shown, the protective film is arranged so that the edge portion (peripheral portion) of the protective film protrudes outward from the periphery of the second region 13 having the notch-like step portion formed in the periphery of the main surface 10A.

[0205] The amount of protrusion of the edge of the protective film is not particularly limited, but from the viewpoint of surely performing the compression step, the amount of protrusion is preferably an amount that allows the protruding edge to be placed on the support surface 33A of the support member 33 .

[0206] The protrusion of the edge of the protective film preferably has a width W2 greater than a certain value when viewed from above (see Fig.11 ) This is to fill the step of the blank area 13B with the portion of the protective film sandwiched between the pressing member 32 and the supporting member 33 during the compression step.

[0207] The volume required to fill the step is appropriately adjusted according to conditions such as the height of the bump 11 , the area occupied by the blank region 13B on the main surface 10A of the semiconductor wafer, and the thickness of the protective film.

[0208] Therefore, the width W2 of the protruding amount of the edge of the protective film in a plan view is not particularly limited. Generally, the width W2 of the protruding amount is preferably an amount that does not protrude further outward from the periphery of the support surface 33A.

[0209] Specifically, when the protruding amount of the edge of the protective film, the length between the position corresponding to the periphery of the main surface 10A on the protective film and the outer peripheral edge of the protective film is set to the width W2 when viewed from above, the width W2 is preferably 0.5 to 10 mm, more preferably 1 to 8 mm, and further preferably 1.5 to 6 mm.

[0210] (6b) Pasting process

[0211] In the above-mentioned pasting process, if Fig.10 As shown in FIG. 1 , the pressing member 32 is brought close to the main surface 10A of the semiconductor wafer, and the protective film is pressed and attached to the main surface 10A by the pressing member 32 .

[0212] The pasting process includes the above-mentioned compression process (see Fig.11 ).

[0213] The timing of executing the compression process in the pasting process is not particularly limited. For example, the compression process can be started after the pasting process starts, the compression process and the pasting process end at approximately the same time, or the compression process ends before the pasting process ends.

[0214] Furthermore, by heating the protective film using the above-mentioned heating mechanism in the pasting step, the film thickness portion (the unevenness absorbing layer 23 ) of the protective film can be appropriately deformed in the compression step.

[0215] The heating temperature of the protective film is not particularly limited as long as it is set to a temperature at which the unevenness absorbing layer 23 can be appropriately deformed according to the storage elastic modulus G′ of the unevenness absorbing layer 23 .

[0216] Specifically, as long as the storage elastic modulus G′ of the unevenness absorption layer 23 is within the above range, the heating temperature of the protective film is preferably 50 to 200° C., more preferably 60 to 100° C., and even more preferably 70 to 90° C.

[0217] (6c) Compression process

[0218] In the above compression process, Fig.11 As shown, the edge of the protective film arranged in the above-mentioned arrangement step so as to extend outward from the periphery of the second region 13 serving as the step portion on the main surface 10A is supported by the support member 33, and the edge is sandwiched and compressed between the support member 33 and the pressing member 32.

[0219] The compressive force when compressing the edge of the protective film can be set by the pressure of the pressing member 32. From the viewpoint of being able to appropriately compress the edge of the protective film and prevent cracks and fissures in the semiconductor wafer, the specific pressure is preferably 0.3 to 2 MPa, more preferably 0.4 to 1.5 MPa, and even more preferably 0.5 to 1 MPa.

[0220] In the compression step, in the protective film compressed in the thickness direction, the layer showing fluidity or plasticity (concavity absorbing layer 23) flows appropriately according to the steps or concavities, and generates concentration in the film thickness portion such that the steps or concavities are filled.

[0221] That is, on the first area 12 of the main surface 10A, the film thickness portion of the protective film (the unevenness absorbing layer 23) is sandwiched between the pressing member 32 and the bump 11 and is flattened in the thickness direction, deforming to follow the unevenness of the bump 11 and filling the unevenness. A portion of the film thickness portion of the protective film flattened in the thickness direction, such as Fig.11 As shown by the arrow on the right side of the middle region, the liquid flows onto the blank region 13B of the second region 13, and increases the film thickness of the protective film on the blank region surface 101A.

[0222] On the other hand, the edge of the protective film is compressed between the supporting member 33 and the pressing member 32. Fig.11 As shown by the arrow on the left side in the figure, the film thickness portion (concavoconvexity absorbing layer 23) at the edge of the protective film flows so as to be pushed onto the blank area surface 101A. As a result, the film thickness of the protective film on the blank area surface 101A increases.

[0223] The protective film on the blank area surface 101A has a thick film portion flowing in from the first area 12 and the compressed edge portion. Therefore, the protective film has a film thickness sufficient to fill the step in the entire second area 13 that is a step portion on the main surface 10A. In this way, the protective film on the blank area surface 101A, which has been supplemented with a film thickness, fills the step in the entire second area 13 by increasing the film thickness.

[0224] Furthermore, since the surface of the protective film is in a state of being pressed by the pressing member 32 , it is not affected by the flow of the film thickness portion and becomes a flat surface following the pressing surface 32A.

[0225] Furthermore, in the compression step using the pressing member 32 and the supporting member 33 , the flow of the film thickness portion of the protective film that is intended to flow outward from the periphery of the main surface 10A is restricted.

[0226] That is, the edge of the protective film compressed in the thickness direction is held between the support member 33 and the pressing member 32. Therefore, the flow of the film thickness portion further outward from the periphery of the second region 13 is restricted, and the film thickness portion is held on the blank region surface 101A.

[0227] As described above, the thick portion of the protective film (the unevenness absorbing layer 23 ) is concentrated thickly on the second region 13 of the main surface 10A, so that the step on the main surface 10A is filled and the surface of the protective film becomes flat.

[0228] After the compression step, the semiconductor wafer with the protective film attached to the main surface 10A is taken out from the attaching device 30, and the excess portion such as the edge of the compressed protective film is cut off. Fig.12 As shown, the thick portion of the protective film is concentrated thicker on the blank region surface 101A, thereby filling the step.

[0229] In the above description, the blank region 13B is described as the second region 13 . However, similarly to the blank region 13B, in the peripheral region 13A, the thicker film thickness portion of the protective film is concentrated on the second region 13 to fill the step.

[0230] Furthermore, the surface of the protective film attached to the semiconductor wafer does not form defects that follow the steps of the semiconductor wafer, but becomes a uniform flat surface as a whole.

[0231] It should be noted that Fig.13 This is an explanatory diagram of a case where a protective film is attached to a semiconductor wafer having the above-mentioned step on the main surface 10A by using an attaching device that does not include the above-mentioned compression mechanism (support member 33).

[0232] The protective film has a resin volume (hereinafter also referred to as "film thickness") that is sufficient to absorb the bumps and depressions caused by the bumps 11 in the first area 12 through the bump absorption layer 23, but the film thickness is insufficient to fill the step between the first area 12 and the second area 13, and the step cannot be completely filled.

[0233] In particular, the size of the second region 13 (the area occupied in the main surface 10A) is also large, and the thickness of the protective film is significantly insufficient to fill the step in the entire second region 13 .

[0234] In addition, if Fig.13 As shown by the middle arrow, the thick portion of the protective film (concavoconvex absorbing layer 23) flows outward from the periphery of the main surface 10A of the semiconductor wafer. Furthermore, the pasting device without the compression mechanism (support member 33) does not have a means for restricting the flow of such a thick portion.

[0235] (7) Second usage of the sticking device 30

[0236] A second mode of use of the sticking device 30 will be described. The second mode of use uses the sticking device 30 having the same configuration as the first mode of use.

[0237] The pasting by the pasting device 30 in the second use mode includes: a placement step by the placement mechanism 34 (see Fig.14 (a)) and the pasting process using the above-mentioned pasting mechanism (refer to Fig.10 ). In addition, the pasting process includes a compression process using the above-mentioned compression mechanism (refer to Fig.14 (b)).

[0238] This second mode of use is different from the first mode of use described in (6) in the arrangement step and the compression step.

[0239] It should be noted that in the following description, the plate-like body ( 10 ) is a semiconductor wafer having bumps 11 on the above-mentioned main surface 10A.

[0240] It should be noted that in the following description, the film (20) is the above-mentioned protective film.

[0241] The semiconductor wafer to which the protective film is attached by the attaching device 30 is made into a desired thickness in the back grinding process, is singulated, and is subjected to various processing to become a semiconductor component. That is, when the plate-like body (10) is used as a semiconductor wafer, the attaching device 30 is included in the manufacturing device of the semiconductor component.

[0242] (7a) Configuration process

[0243] In the configuration process of the second mode of use, if Fig.14 As shown in (a), the protective film is arranged so that the edge portion (peripheral edge portion) of the protective film is located on the inner peripheral side of the support member 33.

[0244] That is, in this arrangement step, the edge portion of the protective film is not placed on the support surface 33A of the support member 33 .

[0245] In the above arrangement step, in order to prevent the bulging of the protective film generated in the compression step toward the outer circumference of the second region 13 by the inner circumferential surface of the support member 33, it is preferable to shorten the distance between the edge of the protective film and the inner circumferential surface of the support member 33 as much as possible when viewed from above.

[0246] Specifically, the distance between the edge of the protective film and the inner peripheral surface of the support member 33 when viewed from above is preferably less than 1 mm, more preferably less than 0.5 mm, and further preferably less than 0.3 mm. Furthermore, it is most preferred that the distance between the edge of the protective film and the inner peripheral surface of the support member 33 when viewed from above is 0 mm, that is, the edge of the protective film is in contact with the inner peripheral surface of the support member 33.

[0247] (7b) Pasting process

[0248] In the pasting step of the second use mode, the protective film is pasted on the main surface 10A of the semiconductor wafer using the pressing member 32 in the same manner as in the pasting step of the first use mode (see Fig.10 The pasting process includes the above-mentioned compression process (refer to Fig.14 (b)).

[0249] The details of this pasting step are the same as those of the pasting step in the first usage mode, and the description thereof will be omitted below.

[0250] (7c) Compression process

[0251] In the compression step of the second use mode, the protective film sandwiched between the pressing member 32 and the main surface 10A is intended to make the film thickness portion (concave-convex absorption layer 23) bulge from its edge portion (peripheral portion) toward the outer circumference of the second region 13 that becomes the step portion on the main surface 10A. Fig.14 As indicated by the arrow on the left side in (b), the bulging of the thick film portion (the unevenness absorbing layer 23 ) is blocked by the inner peripheral surface of the supporting member 33 .

[0252] For the edge of the protective film, the film thickness portion (concave-convex absorption layer 23) blocked by the inner circumferential surface of the supporting part 33 stays on the blank area surface 101A, and the film thickness portion flows from the first area 12 into the blank area surface 101A, thereby covering the entire second area 13 that becomes a step portion on the main surface 10A, and increasing the film thickness amount that can fill the step.

[0253] The edge of the protective film on the blank area surface 101A is supplemented by the film thickness to increase the film thickness. Therefore, the compression step is a step of compressing the edge of the protective film using the pressing surface 32A of the pressing member 32, the inner peripheral surface of the supporting member 33, and the main surface 10A of the semiconductor wafer. In addition, the compressed edge of the protective film can fill the step throughout the entire second area 13.

[0254] It should be noted that, when comparing the first usage mode with the second usage mode, in the first usage mode, the edge of the protective film is compressed and flattened between the support member 33 and the pressing member 32. In contrast, in the second usage mode, the edge of the protective film is not compressed between the support member 33 and the pressing member 32, but the bulging of the protective film is blocked by the inner peripheral surface of the support member 33, which is different in this respect.

[0255] The effect brought about by the above-mentioned difference can be produced more significantly when the protective film has a layer that can express fluidity or plasticity, that is, the unevenness absorbing layer 23 .

[0256] That is, when the protective film has a layer (concave-convex absorption layer 23) that can exhibit fluidity or plasticity, and when the first usage mode is implemented, the layer (concave-convex absorption layer 23) constituting the edge portion is made to flow and extrude toward the second area 13 of the main surface 10A, so that not only the amount extruded from the first area 12 but also the portion extruded from the edge portion outside the second area 13 can be used to supplement the film thickness.

[0257] In short, in the first use mode, the unevenness absorbing layer 23 of the protective film is pushed out toward the second region 13 from both the inner peripheral portion and the outer peripheral portion of the peripheral portion surrounding the second region 13 , thereby filling the step.

[0258] In contrast, when the protective film has a layer (concave-convex absorption layer 23) that can exhibit fluidity or plasticity, and when the second usage mode is implemented, the layer (concave-convex absorption layer 23) constituting the edge portion cannot flow and be squeezed out to the second area 13 of the main surface 10A, and the film thickness needs to be supplemented only by the amount squeezed out from the first area 12.

[0259] In short, in the second use mode, the unevenness absorbing layer 23 of the protective film is pushed out toward the second region 13 only from the inner peripheral portion of the peripheral portion surrounding the second region 13 , thereby filling the step.

[0260] Therefore, in the case where the protective film has a layer (concave-convex absorption layer 23) that can exhibit fluidity or plasticity, in the first usage mode, the layer (concave-convex absorption layer 23) that constitutes the edge portion outside the second region 13 can be used to fill the steps of the second region 13. At this point, it is also possible to cope with semiconductor chips having a larger blank area 13B, which can be said to be more advantageous than the second usage mode.

[0261] [2] Pasting device (second invention)

[0262] The sticking device of the second invention is a device for sticking a film (20) on a plate-like body (10).

[0263] The plate-like body (10) has a step on the main surface 10A of the adhesive film (20).

[0264] The pasting device includes a placing member 31 and a pressing member (32), and also includes an arranging mechanism (34) and a processing mechanism (40).

[0265] The above-mentioned mounting member 31 is in the form of a plate. The mounting member 31 is provided with a mounting portion 31A (see Figure 16 to Figure 18 ).

[0266] The pressing member 32 is plate-shaped. The pressing member (32) is disposed at a position opposite to the mounting member 31 (see Figure 16 to Figure 18 ).

[0267] The above-mentioned arrangement mechanism (34) is a mechanism for arranging the film (20) on the main surface 10A. The arrangement mechanism (34) is provided between the mounting member 31 and the pressing member 32 (refer to Figure 1 ).

[0268] The processing mechanism 40 is a mechanism for forming a relatively thick portion on the film (20) disposed on the main surface 10A corresponding to the step of the main surface 10A (see Fig.15 , Fig.18 ).

[0269] It should be noted that the plate-like body (10) is the same as that of the first invention, and its detailed description is omitted. In addition, the film (20) is the same as that of the first invention, and its detailed description is omitted.

[0270] (1) First method

[0271] Specifically, a first aspect of the sticking device according to the second invention includes a placement member 31 , a pressing member 32 , an arranging mechanism 34 , and a processing mechanism 40 .

[0272] Here, the placing member 31 , the pressing member 32 , and the arranging mechanism 34 can use substantially the same members as those of the sticking device 30 of the first invention, and detailed description thereof will be omitted.

[0273] The processing mechanism 40 may be assembled in the sticking device 30, or may be provided outside the sticking device 30. That is, whether the processing mechanism 40 is integrated with the sticking device 30 is not particularly limited.

[0274] (1a) Processing organization

[0275] The processing mechanism 40 is not particularly limited in structure as long as it has a structure capable of forming a relatively thick portion on the film ( 20 ) corresponding to the step on the main surface 10A.

[0276] As the processing mechanism 40, there can be exemplified Fig.15 The structure shown in (a) and (b).

[0277] That is, the processing mechanism 40 includes a first roller 41 and a second roller 42 .

[0278] The first roller 41 is rotatably supported above the film ( 20 ).

[0279] The second roller 42 is rotatably supported below the film ( 20 ).

[0280] The first roll 41 and the second roll 42 are arranged to face each other with the film ( 20 ) interposed therebetween.

[0281] In addition, a plurality of protrusions 43 are provided on the peripheral surface of the second roller 42 .

[0282] It should be noted that the first roller 41, the second roller 42 and the convex portion 43 are not particularly limited in terms of material, driving method, structure, etc. as long as they can process the film (20).

[0283] (2) Pasting in the first way

[0284] In the sticking device of the second invention, a case where a film (20) is stuck to a plate-like body (10) by the first method is described in detail.

[0285] It should be noted that in the following description, the plate-like body ( 10 ) is a semiconductor wafer having bumps 11 on the above-mentioned main surface 10A.

[0286] In the following description, the film (20) is the above-mentioned protective film.

[0287] The first method of pasting includes: a processing step using the processing mechanism 40 (see Fig.15 ), the configuration process using the configuration mechanism 34 of the above-mentioned pasting device 30 (refer to Fig.16 ), and a pasting process using the pasting mechanism (the placing member 31 and the pressing member 32) of the pasting device 30 (see Fig.17 ).

[0288] The semiconductor wafer to which the protective film is attached by the attaching device of the first mode is made into a desired thinness in the back grinding process, is singulated, and various processes are performed to thereby become a semiconductor component. That is, when the plate-like body (10) is used as a semiconductor wafer, the attaching device is included in a semiconductor component manufacturing device.

[0289] Hereinafter, each step involved in the pasting of the first embodiment will be described.

[0290] (2a) Processing steps

[0291] In the processing steps, such as Fig.15 As shown in (a), a protective film is supplied between the first roller 41 and the second roller 42 of the processing mechanism 40, and the protective film is passed from between the first roller 41 and the second roller 42 to the Fig.15 The device is sent in the direction of travel indicated by the arrow in (a).

[0292] In the processing mechanism 40 , when the protective film is sandwiched between the first roller 41 and the second roller 42 and fed in the advancing direction, the first roller 41 and the second roller 42 are rotated respectively.

[0293] The second roller 42 is provided with a convex portion 43 protruding from its circumferential surface. Fig.15 As shown in (b), the convex portion 43 comes into contact with the protective film with the rotation. Then, the portion of the protective film that comes into contact with the convex portion 43 is crushed in the thickness direction between the convex portion 43 and the first roller 41.

[0294] The film thickness of the flattened portion of the protective film (the unevenness absorbing layer 23) is as follows: Fig.15 As shown by the arrow in (b), the liquid flows toward the portion adjacent to the squashed portion and concentrates. Therefore, the film thickness of the portion adjacent to the squashed portion increases.

[0295] The protective film is formed into a finished film 20A by forming portions with different thicknesses such that the squashed portion is thin and the portion adjacent to the squashed portion is thick. The finished film 20A has a relatively thick region 201 among the portions with different thicknesses.

[0296] (2b) Configuration process

[0297] In the configuration process, Fig.16 As shown, after the pressing member 32 is set to a state where it is separated from the semiconductor wafer fixed to the mounting portion 31A of the mounting member 31 , the processed film 20A obtained in the above-mentioned processing steps is supplied onto the main surface 10A of the semiconductor wafer.

[0298] At this time, the processed film 20A is arranged so that the relatively thick region 201 corresponds to the second region 13 having a step portion formed on the peripheral edge of the main surface 10A, and the region 201 is located above the blank region surface 101A.

[0299] It should be noted that, although not specifically shown in the figure, the configuration mechanism 34 can adjust the position of the processed film 20A by appropriately rotating or stopping the pulling roller 35B in a manner such that the relatively thick area 201 of the processed film 20A corresponds to the second area 13 that becomes a step portion on the main surface 10A.

[0300] Furthermore, a support member 33 is provided along the outer periphery of the second region 13 beside the semiconductor wafer.

[0301] (2c) Pasting process

[0302] In the pasting process, Fig.17 As shown, the edge of the protective film is supported by the support member 33 , and the pressing member 32 is brought close to the main surface 10A of the semiconductor wafer, so that the protective film is pressed against the main surface 10A by the pressing member 32 .

[0303] In the pasting step, the thick portion (concavity absorbing layer 23 ) of the processed film 20A compressed in the thickness direction between the pressing member 32 and the bump 11 on the first region 12 of the main surface 10A deforms to follow the concavities and convexities of the bump 11 and fills the concavities and convexities.

[0304] In the pasting process, the edge of the protective film is sandwiched between the supporting member 33 and the pressing member 32. Therefore, the flow of the film thickness portion from the blank region surface 101A to the edge of the protective film is restricted.

[0305] like Fig.17 As shown by the middle arrow, part of the film thickness portion of the processed film 20A flattened in the thickness direction flows onto the blank area 13B of the second area 13 forming a step portion on the main surface 10A, increasing the film thickness of the processed film 20A on the blank area surface 101A.

[0306] In the film 20A after processing, a relatively thick region 201 is arranged on the blank region surface 101A (see Fig.16 By adding the film thickness of the region 201 to the film thickness of the first region 12, the film thickness of the processed film 20A on the blank region surface 101A is further increased (see Fig.17 ).

[0307] In the processed film 20A, the portion adjacent to the relatively thick region 201 is squashed and thinned in the above-mentioned processing step. Therefore, it is possible to suppress the film thickness portion from further retreating outward from the periphery of the second region 13 via the squashed and thinned portion.

[0308] It should be noted that the portion that is crushed and thinned during the processing step is sandwiched between the support member 33 and the pressing member 32 , which also prevents the film thickness portion from further retreating outward from the peripheral edge of the second region 13 .

[0309] In the above-mentioned first mode of pasting, the protective film is processed in the processing step to form a processed film 20A having a relatively thick region 201. The region 201 of the processed film 20A is arranged in a manner corresponding to the second region 13 of the main surface 10A in the arrangement step. In addition, in the pasting step, the film thickness portion further flows in from the first region 12, thereby supplementing the film thickness sufficient to cover the entire second region 13 and fill the step.

[0310] As described above, on the blank region surface 101A, the processed film 20A that has been supplemented by the film thickness increases the film thickness, thereby filling the step over the entire second region 13 .

[0311] Since the surface of the processed film 20A is in a state of being pressed by the pressing member 32 , it is not affected by the flow of the film thickness portion and becomes a flat surface following the pressing surface 32A.

[0312] It should be noted that in the above description, the blank area 13B is listed as the second area 13, but similarly to the blank area 13B, in the peripheral area 13A, the step is filled by making the film thickness portion of the processed film 20A thicker and concentrated on the second area 13.

[0313] Furthermore, the blank area 13B is not limited to Figure 6 The area mainly used as the identification area as shown in (a) and (b) is Figure 7 The same effect can be obtained also in the blank area 13B shown in (a) and (b).

[0314] That is, the first mode of utilizing the pasting device of the second invention is particularly useful when the plate-like body (10) is a semiconductor wafer in which a blank area 13B having a flat blank area surface 101A exists in the second area 13 where no bumps are arranged.

[0315] Furthermore, the surface of the protective film attached to the semiconductor wafer does not form defects that follow the steps of the semiconductor wafer, but becomes a uniform flat surface as a whole.

[0316] (3) Second method

[0317] The sticking device 30 of the second aspect in the second invention includes a placing member 31, a pressing member 32, an arranging mechanism, and a processing mechanism.

[0318] Specifically, if Fig.18 As shown in (a) and (b), the sticking device 30 includes a placing member 31, a pressing member 32, and a support column 45 as an arranging mechanism and a processing mechanism.

[0319] As for the placement member 31 and the pressing member 32 , the same members as those described above can be used, and detailed descriptions thereof will be omitted.

[0320] (3a) Support column

[0321] The sticking device 30 of the second embodiment includes a support column 45 .

[0322] The support column 45 is provided on the outer edge of the placement portion 31A so as to stand toward the pressing member 32 .

[0323] The film (20) is arranged in such a way that its edge (peripheral portion) is located between the support column 45 and the pressing member 32. The support column 45 supports the edge (peripheral portion) of the film (20) from below. Moreover, the support column 45 has the function of sandwiching the edge (peripheral portion) of the film (20) between the pressing member 32 and squeezing it.

[0324] The support column 45 is configured to be able to rise and fall relative to the mounting member 31. The support column 45 keeps the film (20) away from the main surface 10A of the plate-like body (10) when it is raised from the mounting member 31. The support column 45 has a function of arranging the film (20) on the main surface 10A of the plate-like body (10) by descending toward the mounting member 31 from this state.

[0325] That is, the support pin 45 has a function as a processing mechanism for processing the film ( 20 ) and a function as a placement mechanism for placing the film ( 20 ) on the main surface 10A.

[0326] The support column 45 only needs to be able to process the membrane ( 20 ) as described above, and there is no particular limitation on the material, driving method, etc.

[0327] (4) Second method of pasting

[0328] The case of sticking the film (20) to the plate-like body (10) using the sticking device 30 of the second embodiment will be described in detail.

[0329] It should be noted that in the following description, the plate-like body ( 10 ) is a semiconductor wafer having bumps 11 on the above-mentioned main surface 10A.

[0330] In the following description, the film (20) is the above-mentioned protective film.

[0331] The pasting process using the pasting device 30 of the second embodiment includes: a processing step using the support column 45 as the processing mechanism (see Fig.18 (a)); using the configuration step of the support column 45 as the configuration mechanism (reference Fig.18 and a pasting process (omitted from the figure) of the pasting mechanism of the pasting device 30.

[0332] The semiconductor wafer to which the protective film is attached by the attaching device is made into a desired thickness in a back grinding process, is separated into pieces, and is subjected to various processes to become a semiconductor component. That is, the attaching device is included in a semiconductor component manufacturing device.

[0333] Hereinafter, each step related to the pasting of the second embodiment will be described.

[0334] (4a) Processing steps

[0335] In the processing steps, such as Fig.18 As shown in (a), when the pressing member 32 descends, the edge of the protective film supported by the support pins 45 is sandwiched between the pressing member 32 and the support pins 45 and is crushed in the thickness direction.

[0336] like Fig.18 As shown in (b), the film thickness portion (concavoconvexity absorbing layer 23) of the flattened portion of the protective film flows to and concentrates in a portion adjacent to the flattened portion, thereby increasing the film thickness amount of the adjacent portion.

[0337] The protective film is formed into a finished film 20A with portions having different thicknesses, such that the flattened portion is thin and the portion adjacent to the flattened portion is thick. The finished film 20A has a relatively thick region 201 among the portions having different thicknesses.

[0338] (4b) Configuration process

[0339] In the configuration process, Fig.18 As shown in (b), the support column 45 is lowered toward the mounting member 31, so that the protective film is arranged on the main surface 10A.

[0340] In addition, in the processed film 20A, the position of the relatively thick region 201 can be made to correspond to the second region 13 where the step portion is formed in the peripheral portion of the main surface 10A.

[0341] That is, the support pins 45 are provided at the outer edge of the mounting portion 31A. Therefore, when the semiconductor wafer is mounted on the mounting portion 31A, the support pins 45 are aligned with the second region 13, so that the region 201 can be positioned corresponding to the second region 13.

[0342] (4c) Pasting process

[0343] In the pasting step, the support pins 45 are lowered toward the mounting member 31 , and after the protective film is placed on the main surface 10A, the pressing member 32 is lowered.

[0344] The pressing member 32 presses the protective film toward the main surface 10A, thereby attaching the protective film to the main surface 10A.

[0345] Example

[0346] Hereinafter, the present invention will be described in more detail by way of examples.

[0347] [1] Protective film

[0348] As the protective film, a protective film affixed to a 12-inch ring frame was used.

[0349] The structures of the protective film, the base layer 21, the adhesive material layer 22, and the unevenness absorbing layer 23 are as follows.

[0350] The material of the base layer 21 is polyethylene terephthalate film, with a thickness of 75 μm.

[0351] The material of the adhesive material layer 22 is UV curable acrylic adhesive, and the thickness is 10 μm.

[0352] Material of the uneven absorption layer 23: thermoplastic ethylene-α-olefin copolymer (density: 0.861 g / cm 3 , G'(25): 5.15 MPa, G'(60): 0.14 MPa, melt flow rate (190°C): 2.9 g / 10 min), thickness: 510 μm.

[0353] [2]Semiconductor wafer

[0354] As the semiconductor wafer provided with the bumps 11 , a semiconductor wafer having the following specifications was used.

[0355] Diameter: 300mm.

[0356] Thickness: 810μm.

[0357] Material: Silicon.

[0358] Average height of the bumps 11: 200 μm.

[0359] The pitch of the bumps 11 is 400 μm.

[0360] Non-bump area (peripheral area 13A): 3 mm from the outer circumference.

[0361] Non-bump area (blank area 13B as identification area): Figure 6 The length of L1 in (a) is 90 mm, Figure 6 The length of L2 in (a) is 7 mm.

[0362] [3] Attachment of protective film

[0363] <Example 1>

[0364] use Figure 1 The sticking device 30 shown in the figure has a support member 33 (thickness: 1 mm, width W1: 5 mm) formed in a circular ring shape in plan view placed on the outer edge of the placement portion 31A on the placement member 31, and the pressing surface 32A of the pressing member 32 is made of iron.

[0365] After the semiconductor wafer is placed inside the support member 33 , the protective film is supplied in batches in the placement step, and the protective film is placed so as to cover the main surface 10A of the semiconductor wafer.

[0366] Then, the heating temperature of the protective film is set to 80° C., and the pressing force of the pressing member 32 is set to 0.7 MPa. The bonding step and the compression step are performed in this order to bond the protective film to the main surface 10A of the semiconductor wafer.

[0367] Then, at the peripheral edge of the protective film, an excess portion extending from the outer peripheral edge of the semiconductor wafer was cut off, thereby obtaining a sample of Example 1.

[0368] <Comparative Example 1>

[0369] A roller laminating device (product number "DR-3000II" manufactured by Nitto Seiki Co., Ltd.) was used instead of the support member 33. In the same manner as in Example 1, a protective film was affixed to the main surface 10A of the semiconductor wafer, and the excess portion of the peripheral edge of the protective film was cut off to obtain a sample of Comparative Example 1.

[0370] <Comparative Example 2>

[0371] exist Figure 1 In the pasting device 30 shown, the pressing surface 32A is made of silicone rubber and the supporting component 33 is not used. In addition, as in Example 1, a protective film is pasted on the main surface 10A of the semiconductor chip, and the excess part of the peripheral edge of the protective film is cut off to obtain a sample of Comparative Example 2.

[0372] [4] Measurement of the unevenness of the protective film surface

[0373] At the edge of the semiconductor wafer, Fig.19 The position shown in the lower explanatory diagram is set as the horizontal position 0 mm and the vertical position 0 μm, and the vertical position of the protective film surface at the predetermined horizontal position is measured. The results are shown in Fig.19 Upper chart.

[0374] It should be noted that Fig.19 In the lower explanatory diagram, the horizontal position is depicted in a corresponding manner to the upper graph, and the vertical position is depicted in an exaggerated manner.

[0375] The vertical position of the protective film surface was measured. Fig.19The chart can be seen as follows.

[0376] In Example 1, there is almost no height difference in the vertical position at any horizontal position, and the surface of the protective film is flat.

[0377] In Comparative Example 1, the vertical position is lowered in the vicinity of the horizontal position of 4 mm, that is, in the second region, and the vertical position is higher in the range of the horizontal position of 7 to 8 mm, that is, in the first region. From this result, it can be seen that in Comparative Example 1, a depression is formed on the surface of the protective film in the second region in a manner corresponding to the step generated between the second region and the first region.

[0378] In Comparative Example 2, the vertical position tends to be higher in the range of the horizontal position of 5 mm or less, that is, in the second region, while the vertical position tends to be lower in the range of the horizontal position of 7 mm or more, that is, in the first region. From this result, it can be seen that in Comparative Example 2, due to the influence of the step generated between the second region and the first region, the protective film is bent in an arc in the second region, and a depression is formed on the surface of the protective film in the first region.

[0379] Industrial Applicability

[0380] The pasting device of the present invention can be widely used in the application of pasting a film on a plate-like body. In particular, as a plate-like body, in a semiconductor wafer implementing a back grinding process, it has the characteristic of being able to appropriately flatten the surface of the protective film, and is therefore suitable for manufacturing components with excellent productivity.

[0381] Explanation of symbols

[0382] 10: semiconductor wafer, 10A: main surface, 11: bump, 12: first area, 13: second area, 13A: peripheral area, 13B: blank area, 14: chamfered portion, 20: protective film, 20A: processed film, 21: base layer, 22: adhesive material layer, 23: concave-convex absorption layer, 30: pasting device, 31: mounting member, 31A: mounting portion, 32: pressing member, 32A: pressing surface, 33: supporting member, 33A: supporting surface, 35A: guide roller, 35B: pulling roller, 36: heater, 40: processing mechanism, 41: first roller, 42: second roller, 43: convex portion, 45: supporting column.

Claims

1. A pasting device for pasting a film on a plate-like body, characterized in that: have: A plate-shaped mounting member is provided with a mounting portion on which the plate-shaped body is mounted; a plate-shaped pressing member provided at a position opposite to the placing member; and a supporting member provided at an outer edge of the placing portion so as to be located between the placing member and the pressing member, in, The pressing surface of the pressing member in contact with the film is a flat surface, The pressing member has a function of pressing the film toward the main surface of the plate-like body. The supporting member has a function of supporting the edge of the film when the pressing member presses the film. The sticking device has a function of sandwiching the edge portion of the film between the supporting member and the pressing member and compressing the edge portion in the thickness direction thereof. 2 . The sticking device according to claim 1 , further comprising a placement mechanism for placing the film on the main surface of the plate-like body. 3 . The sticking device according to claim 1 , further comprising a heating mechanism for heating the film.

4. The pasting device according to claim 1 or 2, wherein: The plate-like body has a notch-shaped step portion at the peripheral edge of the main surface to which the film is attached. The supporting member is provided at an outer edge of the mounting portion corresponding to the step portion.

5. The pasting device according to claim 4, wherein: The plate-shaped body is a semiconductor wafer, and the film is a protective film for the semiconductor wafer.

6. The pasting device according to claim 5, wherein: The semiconductor wafer has a first region and a second region on the main surface, the first region being provided with bumps, and the second region being a region including at least a portion of the periphery of the main surface and not provided with bumps, The notch-shaped step portion is formed by the second region.

7. A pasting device for pasting a film on a plate-like body, characterized in that: The plate-like body has a step on the main surface on which the film is attached. The pasting device comprises: A plate-shaped placing member on which the placing portion of the plate-shaped body is placed and a plate-shaped pressing member provided at a position facing the placing member are provided. Also available: an arrangement mechanism provided between the placement member and the pressing member in order to arrange the film on the main surface; and a processing mechanism for forming a relatively thick portion corresponding to the step on the film disposed on the main surface, The pressing surface of the pressing member in contact with the film is a flat surface. 8 . The sticking device according to claim 7 , further comprising a heating mechanism for heating the film.

9. The pasting device according to claim 7 or 8, wherein: The plate-shaped body is a semiconductor wafer, and the film is a protective film for the semiconductor wafer.

Images