Crimp-type IGBT partial discharge simulation device and method

Abstract

The present application relates to a device and method for simulating partial discharge of a crimped IGBT. The device and method for simulating partial discharge of a crimped IGBT include: a housing having a housing cavity; a simulation sample disposed in the housing cavity, the material of the simulation sample being the same as the material of the insulating layer of the IGBT to be simulated; a high-voltage electrode disposed in the housing cavity; a grounding electrode disposed in the housing cavity, spaced apart from the high-voltage electrode, at least one of the high-voltage electrode and the grounding electrode being in contact with the simulation sample; and a high-voltage power supply electrically connected to the high-voltage electrode for providing high voltage electricity to the high-voltage electrode. The device and method for simulating partial discharge of a crimped IGBT provided in the present application can simulate partial discharge of a crimped IGBT.

Description

Technical Field

[0001] The present application relates to the field of circuits, and in particular to a device and method for simulating partial discharge of a crimped IGBT. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage-driven power semiconductor device composed of BJT (Bipolar Junction Transistor) and MOS (Metal Oxide Semiconductor). IGBT is very suitable for power equipment in the fields of power conversion systems with DC voltage of 600V and above, such as AC motors, inverters, switching power supplies, lighting circuits, traction drives, etc.

[0003] IGBT is divided into welding type IGBT and crimping type IGBT. The internal electrical insulation defects of IGBT will lead to partial discharge, which will damage the power equipment. Therefore, it is very important to study the partial discharge characteristics of IGBT. However, there is a lack of devices to simulate the partial discharge of IGBT in traditional technology, especially the lack of partial discharge simulation devices for crimping type IGBT. Summary of the invention

[0004] Based on this, a device and method for simulating partial discharge of a crimped IGBT are provided.

[0005] A crimping type IGBT partial discharge simulation device, comprising:

[0006] The box body has a containing cavity;

[0007] A simulation sample is arranged in the accommodating cavity, and the material of the simulation sample is the same as the material of the insulating layer of the IGBT to be simulated;

[0008] A high voltage electrode is disposed in the accommodating cavity;

[0009] A grounding electrode is disposed in the accommodating cavity and spaced apart from the high-voltage electrode, and at least one of the high-voltage electrode and the grounding electrode is in contact with the simulation sample;

[0010] A high-voltage power supply is electrically connected to the high-voltage electrode and is used to provide high-voltage electricity to the high-voltage electrode.

[0011] In one embodiment, the simulation sample has a first surface, the high voltage electrode and the ground electrode are both in contact with the first surface, and the crimping type IGBT partial discharge simulation device further includes:

[0012] A lateral adjustment component is arranged on the box body, connected to the high-voltage electrode and / or the grounding electrode, and is used to adjust the distance between the high-voltage electrode and the grounding electrode.

[0013] In one embodiment, the lateral adjustment assembly includes:

[0014] A first adjustment block is arranged in the accommodating cavity, located at a side of the high-voltage electrode away from the simulation sample, and connected to the high-voltage electrode;

[0015] The first adjusting rod is passed through the box body and connected to the first adjusting block.

[0016] In one embodiment, the lateral adjustment assembly further comprises:

[0017] A second adjustment block is disposed in the accommodating cavity, located at a side of the ground electrode away from the simulation sample, and connected to the ground electrode;

[0018] The second adjusting rod is passed through the box body and connected to the second adjusting block.

[0019] In one embodiment, the crimped IGBT partial discharge simulation device further comprises:

[0020] A first pressing assembly is disposed in the accommodating cavity, wherein the first pressing assembly passes through the first adjusting block and abuts against the high-voltage electrode, and presses the high-voltage electrode toward the direction of the simulated sample;

[0021] The second clamping assembly is arranged in the accommodating cavity. The second clamping assembly passes through the second adjusting block to abut against the grounding electrode and presses the grounding electrode toward the direction of the simulation sample.

[0022] In one embodiment, the high voltage electrode is a needle electrode or a spherical electrode, and the ground electrode is a plate electrode;

[0023] Alternatively, the high voltage electrode is a plate-shaped electrode, and the ground electrode is a needle-shaped electrode or a spherical electrode.

[0024] In one embodiment, the high voltage electrode and the ground electrode are both plate-shaped electrodes.

[0025] In one embodiment, the high voltage electrode and the ground electrode are both needle-shaped electrodes.

[0026] In one embodiment, the crimped IGBT partial discharge simulation device further comprises:

[0027] A cover plate is arranged on the box body and is used for sealing the accommodating cavity.

[0028] In one embodiment, the box body and the cover plate are both made of transparent materials.

[0029] A method for simulating partial discharge of a crimped IGBT, comprising:

[0030] Providing a box body, the box body having a containing cavity;

[0031] Providing a simulation sample, wherein the material of the simulation sample is the same as the material of the insulating layer of the IGBT to be simulated;

[0032] Selecting the types of the high-voltage electrode and the ground electrode according to the type of the IGBT to be simulated, and determining the arrangement of the high-voltage electrode and the ground electrode;

[0033] Provide high voltage electrodes and grounding electrodes according to the selected type;

[0034] Placing the simulation sample, the high-voltage electrode and the ground electrode into the accommodation cavity according to a determined arrangement, and spacing the high-voltage electrode and the ground electrode so that both the high-voltage electrode and the ground electrode are in contact with the simulation sample;

[0035] A high voltage power supply is used to supply high voltage electricity to the high voltage electrode, so as to cause partial discharge in the simulated sample.

[0036] In one embodiment, the selecting the types of the high voltage electrode and the ground electrode according to the type of the IGBT to be simulated includes:

[0037] Building a simulation model according to the type of the IGBT to be simulated;

[0038] Performing simulation calculation on the simulation model to obtain the electric field intensity distribution of the simulation model;

[0039] Determining the electric field concentration form and / or electric field uniformity of the IGBT to be simulated according to the electric field intensity distribution;

[0040] Determining the types of the high-voltage electrode and the grounding electrode according to the electric field concentration form and / or the electric field uniformity;

[0041] The arrangement of the high voltage electrode and the grounding electrode is determined according to the electric field concentration form.

[0042] In one embodiment, determining the electric field concentration form of the IGBT to be simulated according to the electric field intensity distribution includes:

[0043] If the electric field concentration form is the tip electric field concentration, it is determined that the high voltage electrode is a needle electrode or a spherical electrode, and the ground electrode is a plate electrode, or it is determined that the high voltage electrode is a plate electrode, and the ground electrode is a needle electrode or a spherical electrode;

[0044] If the electric field concentration form is surface electric field concentration, it is determined that both the high-voltage electrode and the grounding electrode are plate-shaped electrodes;

[0045] If the electric field concentration form is suspended metal particle electric field concentration, it is determined that both the high-voltage electrode and the ground electrode are needle-shaped electrodes.

[0046] In one embodiment, the method further comprises:

[0047] The distance between the high voltage electrode and the ground electrode is adjusted to simulate different degrees of partial discharge.

[0048] In one embodiment, the method further comprises:

[0049] According to the actual operation mode of the IGBT to be simulated, the output voltage of the high-voltage power supply is adjusted.

[0050] The crimped IGBT partial discharge simulation device and method provided in the embodiment of the present application simulates the insulating layer of the IGBT to be simulated through the simulation sample; provides high voltage electricity to the high voltage electrode through the high voltage power supply, so that an electric field is formed between the high voltage electrode and the ground electrode to simulate the electric field of the IGBT to be simulated; and induces partial discharge of the simulation sample through the simulated electric field, thereby realizing the simulation of partial discharge of the IGBT to be simulated. The crimped IGBT partial discharge simulation device and method in the embodiment of the present application can realize the simulation of partial discharge of crimped IGBT, filling the gap in this regard. At the same time, by simulating the partial discharge of crimped IGBT, it is convenient to accurately study the partial discharge characteristics of crimped IGBT, providing an effective basis for the research and development and improvement of crimped IGBT modules. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0052] Figure 1 A schematic diagram of the structure of a crimp-type IGBT partial discharge simulation device provided by one embodiment of the present application;

[0053] Figure 2 A schematic flow chart of a method for simulating partial discharge of a crimped IGBT provided in one embodiment of the present application;

[0054] Figure 3A schematic flow chart of a method for simulating partial discharge of a crimped IGBT provided in one embodiment of the present application;

[0055] Figure 4 The electric field intensity distribution of a crimped IGBT provided in one embodiment of the present application.

[0056] Description of reference numerals:

[0057] Crimp type IGBT partial discharge simulator 10

[0058] Box 110

[0059] Accommodating chamber 111

[0060] Simulation sample 120

[0061] First surface 121

[0062] High voltage electrode 130

[0063] Ground electrode 140

[0064] High voltage power supply 150

[0065] Cover 160

[0066] Connecting rod 161

[0067] Lateral adjustment assembly 170

[0068] The first adjustment block 171

[0069] First adjustment lever 172

[0070] The second adjustment block 173

[0071] Second adjustment lever 174

[0072] The first clamping assembly 181

[0073] The second clamping assembly 182 DETAILED DESCRIPTION

[0074] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the following embodiments and the accompanying drawings further describe the press-fit IGBT partial discharge simulation device and method of the present application in detail. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0075] The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application, unless otherwise specified, include direct and indirect connections (couplings). In the description of this application, it should be understood that the orientation or position relationship indicated by the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. are based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to this application.

[0076] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0077] See also Figure 1 One embodiment of the present application provides a crimped IGBT partial discharge simulation device 10, which is used to simulate the partial discharge of a crimped IGBT. The simulated crimped IGBT is named as the IGBT to be simulated. The crimped IGBT partial discharge simulation device 10 includes a housing 110, a simulation sample 120, a high-voltage electrode 130, a ground electrode 140 and a high-voltage power supply 150. The housing 110 has a accommodating cavity 111, and the simulation sample 120, the high-voltage electrode 130 and the ground electrode 140 are all arranged in the accommodating cavity 111.

[0078] The shape, structure and material of the box 110 can be selected according to actual needs. It can be a cubic structure, a spherical structure, or other irregularly shaped structures. The material of the box 110 can be metal, glass, plastic, etc. In one embodiment, the material of the box 110 is a transparent material, such as glass, so as to facilitate the observation of the partial discharge process. The box 110 can be an open structure or a closed structure. In one embodiment, the box 110 is an open structure, and the crimping type IGBT partial discharge simulation device 10 further includes a cover plate 160. The cover plate 160 is covered on the opening of the box 110 and is used to close the accommodating cavity 111 to prevent the safety of the experimenter from being endangered during the partial discharge process and improve safety. In one embodiment, the cover plate 160 can be fixed to the box 110 by a connecting rod 161, and the connecting rod 161 can be a threaded rod. The material of the cover plate 160 can also be a transparent material to facilitate the observation of the partial discharge process.

[0079] The simulation sample 120 refers to a sample of a structural layer used in an experiment to simulate the occurrence of local discharge in the IGBT to be simulated. Local discharge of a crimped IGBT is caused by insulation defects. Therefore, the material of the simulation sample 120 is the same as the material of the insulation layer of the IGBT to be simulated. For example, when the material of the insulation layer of the IGBT to be simulated is PEEK (polyetheretherketone), the material of the simulation sample 120 is PEEK. The simulation sample 120 can be a plate-like structure or a block-like structure.

[0080] The high-voltage electrode 130 and the ground electrode 140 are arranged at intervals, and at least one of them is in contact with the simulation sample 120. By applying high voltage to the high-voltage electrode 130, an electric field is generated between the high-voltage electrode 130 and the ground electrode 140, thereby simulating the electric field of the IGBT to be simulated. The types of the IGBT to be simulated are different, and the structures and types of the high-voltage electrode 130 and the ground electrode 140 are different. In practical applications, during the long-term operation and use of the crimped IGBT, the insulating material layer will age under the action of the multi-physical fields of electricity and heat, and defects such as cracks may be formed on the surface. These defects existing on the surface of the material will have a certain impact on the characteristics of local discharge, such as the starting voltage, waveform, repetition rate, etc. of local discharge, thereby forming different electric fields.

[0081] In one embodiment, the types of the high-voltage electrode 130 and the ground electrode 140 can be selected according to the uniformity of the electric field of the IGBT to be simulated. Specifically, the types (materials, sizes, etc.) of the IGBT to be simulated are different, and the electric field strengths and electric field uniformities are different (the electric field non-uniformity coefficients f are different). Electric fields of different uniformities can be simulated by different types of electrodes. When the electric field of the IGBT to be simulated is a uniform electric field (f=1), the electric field of the IGBT to be simulated can be simulated by a plate-plate electrode; when the electric field of the IGBT to be simulated is a slightly non-uniform electric field (1<f≤4), the electric field of the IGBT to be simulated can be simulated by a ball-plate electrode or a ball-ball electrode; when the electric field of the IGBT to be simulated is an extremely non-uniform electric field (f>4), the electric field of the IGBT to be simulated can be simulated by a needle-plate electrode.

[0082] The specific arrangement of the high voltage electrode 130 and the ground electrode 140, that is, the location of the arrangement, may vary depending on the type of local discharge being simulated. Figure 1 As shown, the simulation sample 120 has a first surface 121, and the high-voltage electrode 130 and the ground electrode 140 are both in contact with the first surface 121 to simulate the surface electric field. In other words, the high-voltage electrode 130 and the ground electrode 140 are arranged along one surface of the simulation sample 12, thereby generating a surface electric field to simulate the surface partial discharge of the crimped IGBT.

[0083] In another embodiment, the high-voltage electrode 130 may be suspended above the simulation sample 120 and spaced from the first surface 121 of the simulation sample 120, that is, a certain distance from the first surface 121. The ground electrode 140 is in contact with the first surface 121, and the area of ​​the contact surface of the ground electrode 140 with the first surface 121 is larger than the area of ​​the first surface 121, ensuring that the entire surface of the first surface 121 is completely in contact with the ground electrode 140, thereby generating a corona discharge electric field to simulate the corona partial discharge of the crimped IGBT.

[0084] In other embodiments, the types of the high-voltage electrode 130 and the ground electrode 140 can also be selected according to the electric field concentration form of the IGBT to be simulated. When the electric field of the IGBT to be simulated is a tip electric field concentration, the electric field of the IGBT to be simulated can be simulated by a needle-plate electrode or a ball-plate electrode; when the electric field of the IGBT to be simulated is a surface electric field concentration, the electric field of the IGBT to be simulated can be simulated by a plate-plate electrode; when the electric field of the IGBT to be simulated is a suspended metal particle electric field concentration, the electric field of the IGBT to be simulated can be simulated by a needle-needle electrode.

[0085] In some embodiments, the types of the high voltage electrode 130 and the ground electrode 140 may also be selected by comprehensively considering the electric field uniformity and concentration form of the IGBT to be simulated.

[0086] The high-voltage power supply 150 is electrically connected to the high-voltage electrode 130. The high-voltage power supply 150 can be arranged outside the housing 110 and electrically connected to the high-voltage electrode 130 through a connecting wire. The high-voltage power supply 150 is used to generate high voltage electricity and provide it to the high-voltage electrode 130 so that the simulated sample undergoes partial discharge. Among them, high voltage electricity refers to a voltage higher than 1000V. The high-voltage power supply 150 can generate direct current high voltage electricity. In one embodiment, the high-voltage power supply 150 can also be used to simulate the high voltage electricity in the actual operating mode of the IGBT to be simulated. Under different operating modes of the IGBT to be simulated, the direct current voltage that triggers partial discharge may be a voltage with mutations rather than stable direct current high voltage electricity. The output voltage of the high-voltage power supply can be adjusted according to the actual operating mode of the IGBT to be simulated to simulate the actual operating mode and improve the authenticity of the partial discharge simulation.

[0087] When in use, the simulation sample 120 is placed in the accommodating cavity 111. The simulation sample 120 can be placed at the bottom of the accommodating cavity 111, and the high-voltage electrode 130 and the ground electrode 140 are arranged above the simulation sample 120 at intervals. A high voltage is applied to the high-voltage electrode 130 by the high-voltage power supply 150, so that an electric field is generated between the high-voltage electrode 130 and the ground electrode 140 to simulate the electric field of the IGBT to be simulated. Since the simulation sample 120 is in contact with both the high-voltage electrode 130 and the ground electrode 140, the simulation sample 120 has insulation defects. Therefore, under the electric field generated by the high-voltage electrode 130 and the ground electrode 140, the simulation sample 120 will generate partial discharge. Since the material of the insulation layer of the simulation sample 120 and the IGBT to be simulated is the same, the partial discharge phenomenon of the simulation sample 120 can represent the partial discharge phenomenon of the IGBT to be simulated.

[0088] After simulating the partial discharge phenomenon of the IGBT to be simulated by the crimped IGBT partial discharge simulation device 10, the partial discharge signal can be further extracted by using the pulse current method, the ultra-high frequency method and the like. Then, the waveform of the partial discharge, the partial discharge repetition rate of the DC voltage and the like can be analyzed. The microscopic mechanism of the partial discharge can be studied, and the characteristic parameters of the partial discharge can be extracted based on the above aspects to distinguish it from other partial discharge types that occur in the crimped IGBT, so as to realize the identification of different partial discharge types.

[0089] In this embodiment, the IGBT partial discharge simulation device 10 includes the housing 110, the simulation sample 120, the high voltage electrode 130, the ground electrode 140 and the high voltage power supply 150. The material of the simulation sample 120 is the same as the material of the insulating layer of the IGBT to be simulated. In this embodiment, the insulating layer of the IGBT to be simulated is simulated by the simulation sample 120; the high voltage power supply 150 provides high voltage electricity to the high voltage electrode 130, so that an electric field is formed between the high voltage electrode 130 and the ground electrode 140 to simulate the electric field of the IGBT to be simulated; the simulated electric field induces partial discharge of the simulation sample 120, thereby realizing the simulation of partial discharge of the IGBT to be simulated. The crimping type IGBT partial discharge simulation device 10 in this embodiment can realize the simulation of partial discharge of crimping type IGBT, filling the gap in this aspect. At the same time, by simulating the partial discharge of crimping type IGBT, it is convenient to accurately study the partial discharge characteristics of crimping type IGBT, providing an effective basis for the research and development and improvement of IGBT modules.

[0090] In one embodiment, when simulating the creeping electric field, the IGBT partial discharge simulation device 10 further includes a lateral adjustment component 170, which is disposed in the housing 110 and connected to at least one of the high voltage electrode 130 and the ground electrode 140. The lateral adjustment component 170 is used to adjust the distance between the high voltage electrode 130 and the ground electrode 140. The lateral adjustment component 170 can be entirely disposed in the housing 110, that is, disposed in the accommodating cavity 111; the lateral adjustment component 170 can also be partially disposed in the housing 110 and partially disposed outside the housing 110. The lateral adjustment component 170 is connected to at least one of the high voltage electrode 130 and the ground electrode 140, and the lateral adjustment component 170 can be used to adjust the movement of at least one of the high voltage electrode 130 and the ground electrode 140, thereby changing the distance between the high voltage electrode 130 and the ground electrode 140 to simulate partial discharges of different degrees. When the distance between the high-voltage electrode 130 and the ground electrode 140 is large, the length of the arc is relatively short and the local discharge is less serious; when the distance between the high-voltage electrode 130 and the ground electrode 140 is small, the length of the arc is relatively short and the local discharge is more serious.

[0091] In this embodiment, the distance between the high voltage electrode 130 and the ground electrode 140 is adjusted by the lateral adjustment component 170, so as to simulate local discharges of different degrees, making the simulation closer to the actual situation, with high flexibility and strong practicality.

[0092] In one embodiment, the lateral adjustment assembly 170 includes a first adjustment block 171 and a first adjustment rod 172. The first adjustment block 171 is disposed in the accommodating cavity 111, and the first adjustment block 171 is located on the side of the high-voltage electrode 130 away from the simulation sample 120. The first adjustment block 171 is connected to the high-voltage electrode 130. The first adjustment rod 172 is passed through the box body 110 and connected to the first adjustment block 171. In one embodiment, the first adjustment rod 172 is a threaded rod. By rotating the first adjustment rod 172, the first adjustment block 171 is pushed to move, and the movement of the first adjustment block 171 drives the high-voltage electrode 130 to move, thereby changing the distance between the high-voltage electrode 130 and the grounding electrode 140 to simulate different degrees of partial discharge.

[0093] In one embodiment, the lateral adjustment assembly 170 further includes a second adjustment block 173 and a second adjustment rod 174. The second adjustment block 173 is disposed in the accommodating cavity 111. The second adjustment block 173 is located on the side of the ground electrode 140 away from the simulation sample 120 and is connected to the ground electrode 140. The second adjustment rod 174 is passed through the box 110 and is connected to the second adjustment block 173. In one embodiment, the second adjustment rod 174 is a threaded rod. By rotating the second adjustment rod 174, the second adjustment block 173 is pushed to move, and the second adjustment block 171 moves to drive the ground electrode 140 to move, thereby changing the distance between the high-voltage electrode 130 and the ground electrode 140 to simulate different degrees of partial discharge. When in use, any one of the first adjustment rod 172 and the second adjustment rod 174 can be adjusted to adjust the distance between the high-voltage electrode 130 and the ground electrode 140, or the first adjustment rod 172 and the second adjustment rod 174 can be adjusted at the same time.

[0094] In one embodiment, the crimping type IGBT partial discharge simulation device 10 further includes a first clamping assembly 181 and a second clamping assembly 182. The first clamping assembly 181 and the second clamping assembly 182 are both disposed in the accommodating cavity 111. The first clamping assembly 181 abuts against the high-voltage electrode 130 through the first adjustment block 171, and presses the high-voltage electrode 130 in the direction where the simulation sample 120 is located, so that the high-voltage electrode 130 and the simulation sample 120 are in full contact. The second clamping assembly 182 abuts against the ground electrode 140 through the second adjustment block 173, and presses the ground electrode 140 in the direction where the simulation sample 120 is located, so that the ground electrode 140 and the simulation sample 120 are in full contact. In this embodiment, the first clamping assembly 181 is provided to achieve full contact between the high-voltage electrode 130 and the simulation sample 120, and the second clamping assembly 182 is provided to achieve full contact between the ground electrode 140 and the simulation sample 120, thereby ensuring the integrity of local discharge and the accuracy of simulation.

[0095] In one embodiment, when the electric field of the IGBT to be simulated is a tip electric field concentration, the high voltage electrode 130 is a needle electrode or a spherical electrode, and the ground electrode 140 is a plate electrode; or, the high voltage electrode 130 is a plate electrode, and the ground electrode 140 is a needle electrode or a spherical electrode, so as to form a needle-plate electrode or a spherical-plate electrode to simulate the electric field of the tip electric field concentration of the IGBT to be simulated. Whether the high voltage electrode 130 is a plate electrode or an electrode or a spherical electrode is mainly determined according to the electric field direction of the IGBT to be simulated. If the electric field of the IGBT to be simulated is emitted from the tip, the high voltage electrode 130 is a needle electrode or a spherical electrode, and the ground electrode 140 is a plate electrode; if the electric field of the IGBT to be simulated points to the tip direction, the high voltage electrode 130 is a plate electrode, and the ground electrode 140 is a needle electrode or a spherical electrode.

[0096] In one embodiment, when the electric field of the IGBT to be simulated is surface electric field concentration, the high voltage electrode 130 and the ground electrode 140 are both plate electrodes to form a plate-plate electrode to simulate the electric field of the surface electric field concentration of the IGBT to be simulated.

[0097] In one embodiment, when the electric field of the IGBT to be simulated is a suspended metal particle electric field concentration, the high voltage electrode 130 and the ground electrode 140 are both needle electrodes, so as to simulate the electric field of the suspended metal particle electric field concentration of the IGBT to be simulated by simulating needle-needle electrodes.

[0098] See also Figure 2One embodiment of the present application further provides a method for simulating partial discharge of a crimped IGBT, which corresponds to the crimped IGBT partial discharge simulation device 10 described in the above embodiment, and is a method for preparing the crimped IGBT partial discharge simulation device 10 and performing partial discharge simulation using the crimped IGBT partial discharge simulation device 10, the method comprising:

[0099] S10, providing a box body 110, wherein the box body 110 has a receiving cavity 111;

[0100] S20, providing a simulation sample 120, wherein the material of the simulation sample 120 is the same as the material of the insulating layer of the IGBT to be simulated;

[0101] S30, selecting the types of the high voltage electrode 130 and the ground electrode 140 according to the type of the IGBT to be simulated, and determining the arrangement of the high voltage electrode 130 and the ground electrode 140;

[0102] S40, providing a high voltage electrode 130 and a ground electrode 140 according to the selected type;

[0103] S50, placing the simulation sample 120, the high voltage electrode 130 and the ground electrode 140 into the accommodation cavity 111 according to a determined arrangement, and arranging the high voltage electrode 130 and the ground electrode 140 so that the high voltage electrode 130 and the ground electrode 140 are spaced apart, and at least one of the high voltage electrode 130 and the ground electrode 140 is in contact with the simulation sample 120;

[0104] S60 , providing high voltage electricity to the high voltage electrode 130 through the high voltage power supply 150 , so as to cause partial discharge in the simulation sample 120 .

[0105] The specific principles and beneficial effects achieved by the method for simulating partial discharge of a crimped IGBT provided in this embodiment are the same as those described in the above embodiments and will not be repeated here.

[0106] See also Figure 3 In one embodiment, S30 includes:

[0107] S310, building a simulation model according to the type of the IGBT to be simulated;

[0108] S320, performing simulation calculation on the simulation model to obtain the electric field intensity distribution of the simulation model;

[0109] S330, determining the electric field concentration form and / or electric field uniformity of the IGBT to be simulated according to the electric field intensity distribution;

[0110] S340, determining the types of the high voltage electrode 130 and the ground electrode 140 according to the electric field concentration form and / or the electric field uniformity;

[0111] S350, determining the arrangement of the high voltage electrode 130 and the ground electrode 140 according to the electric field concentration form.

[0112] A finite element simulation model is built according to the type (material, size, etc.) of the IGBT to be simulated, and the simulation model is used to simulate the IGBT to be simulated. The simulation model is simulated and calculated to obtain the electric field intensity distribution of the simulation model. The electric field intensity distribution is used to characterize the intensity distribution of the electric field of the simulation model, and may include the direction of the electric field, the intensity of the electric field, the distribution of the electric field, etc. The electric field intensity distribution may be represented by an image or by data, etc. Please refer to Figure 4 In one embodiment, the electric field intensity distribution of a certain crimped IGBT is as follows: Figure 4 shown.

[0113] In one embodiment, when determining the electric field concentration form of the IGBT to be simulated based on the electric field intensity distribution, if the electric field lines are parallel to the surface of the insulating material, it is surface electric field concentration; if the electric field lines are emitted from the tip, it is tip electric field concentration; if the electric field intensity distribution shows that metal ions are suspended, it is suspended metal particle electric field concentration.

[0114] In one embodiment, in S340, determining the types of the high voltage electrode 130 and the ground electrode 140 according to the electric field concentration form includes:

[0115] If the electric field concentration form is the tip electric field concentration, it is determined that the high voltage electrode 130 is a needle electrode or a spherical electrode, and the ground electrode 140 is a plate electrode, or it is determined that the high voltage electrode 130 is a plate electrode, and the ground electrode 140 is a needle electrode or a spherical electrode;

[0116] If the electric field concentration form is surface electric field concentration, it is determined that both the high voltage electrode 130 and the ground electrode 140 are plate-shaped electrodes;

[0117] If the electric field concentration form is the electric field concentration of suspended metal particles, it is determined that both the high-voltage electrode 130 and the ground electrode 140 are needle-shaped electrodes.

[0118] The specific method for determining the types of the high voltage electrode 130 and the ground electrode 140 according to the electric field uniformity is referred to the above embodiment and will not be described in detail here.

[0119] In one embodiment, the method further comprises:

[0120] S70, adjusting the distance between the high voltage electrode and the ground electrode to simulate different degrees of partial discharge;

[0121] S80, adjusting the output voltage of the high-voltage power supply according to the actual operation mode of the IGBT to be simulated.

[0122] The specific principles, beneficial effects, etc. of the IGBT partial discharge simulation method provided in the above embodiments can be referred to the relevant description in the above-mentioned IGBT partial discharge simulation device, which will not be elaborated here.

[0123] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0124] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for simulating partial discharge of a crimped IGBT, characterized in that: include: Providing a box body, the box body having a containing cavity; Providing a simulation sample, wherein the material of the simulation sample is the same as the material of the insulating layer of the IGBT to be simulated; Building a simulation model according to the type of the IGBT to be simulated; Performing simulation calculation on the simulation model to obtain the electric field intensity distribution of the simulation model; Determining the electric field concentration form and / or electric field uniformity of the IGBT to be simulated according to the electric field intensity distribution; Determining the types of the high voltage electrode and the grounding electrode according to the electric field concentration form and / or the electric field uniformity; Determining the arrangement of the high voltage electrode and the grounding electrode according to the electric field concentration form; Provide high voltage electrodes and grounding electrodes according to the selected type; Placing the simulation sample, the high-voltage electrode and the ground electrode into the accommodation cavity according to a determined arrangement, and spacing the high-voltage electrode and the ground electrode, with at least one of the high-voltage electrode and the ground electrode in contact with the simulation sample; A high voltage power supply is used to supply high voltage electricity to the high voltage electrode, so as to cause partial discharge in the simulated sample.

2. The method according to claim 1, characterized in that: The step of determining the electric field concentration form of the IGBT to be simulated according to the electric field intensity distribution includes: If the electric field concentration form is the tip electric field concentration, it is determined that the high voltage electrode is a needle electrode or a spherical electrode, and the ground electrode is a plate electrode, or it is determined that the high voltage electrode is a plate electrode, and the ground electrode is a needle electrode or a spherical electrode; If the electric field concentration form is surface electric field concentration, it is determined that both the high-voltage electrode and the grounding electrode are plate-shaped electrodes; If the electric field concentration form is suspended metal particle electric field concentration, it is determined that both the high-voltage electrode and the ground electrode are needle-shaped electrodes.

3. The method according to claim 1 or 2, characterized in that: The method further comprises: The distance between the high voltage electrode and the ground electrode is adjusted to simulate different degrees of partial discharge.

4. The method according to claim 1 or 2, characterized in that: The method further comprises: According to the actual operation mode of the IGBT to be simulated, the output voltage of the high-voltage power supply is adjusted.

5. The method according to claim 1 or 2, characterized in that: The simulation sample has a first surface, and the high-voltage electrode and the ground electrode are both in contact with the first surface. A lateral adjustment component is also provided. The lateral adjustment component is arranged on the box body and connected to the high-voltage electrode and / or the grounding electrode to adjust the distance between the high-voltage electrode and the grounding electrode.

6. The method according to claim 5, characterized in that The lateral adjustment assembly comprises: A first adjustment block is arranged in the accommodating cavity, located at a side of the high-voltage electrode away from the simulation sample, and connected to the high-voltage electrode; The first adjusting rod is passed through the box body and connected to the first adjusting block.

7. The method according to claim 6, characterized in that The lateral adjustment assembly also includes: A second adjustment block is disposed in the accommodating cavity, located at a side of the ground electrode away from the simulation sample, and connected to the ground electrode; The second adjusting rod is passed through the box body and connected to the second adjusting block.

8. The method according to claim 7, characterized in that The lateral adjustment assembly also includes: A first pressing assembly is disposed in the accommodating cavity, wherein the first pressing assembly passes through the first adjusting block and abuts against the high-voltage electrode, and presses the high-voltage electrode toward the direction of the simulated sample; The second clamping assembly is arranged in the accommodating cavity. The second clamping assembly passes through the second adjusting block to abut against the grounding electrode and presses the grounding electrode toward the direction of the simulation sample.

9. The method according to claim 1 or 2, characterized in that: A cover plate is provided, which is arranged on the box body and is used to seal the accommodating cavity. The box body and the cover plate are both made of transparent materials.

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