Semiconductor devices

Abstract

A semiconductor device with high moisture resistance is provided. The semiconductor device (100A) has a semiconductor integrated circuit (10), a lead frame (601, 622), and a molded resin (9). The molded resin (9) covers the semiconductor integrated circuit (10). The semiconductor integrated circuit (10) has at least terminals (VUB, VUS). The lead frame (601) is connected to the terminal (VUB). The lead frame (622) is connected to the terminal (VUS). The molded resin (9) further covers the lead frame (601) by exposing a portion (91) of the lead frame (601). The molded resin (9) further covers the lead frame (622) by exposing the front end of the lead frame (622) on the opposite side of the terminal (VUS). The molded resin (9) includes a recess (141), and the recess (141) is opened in a manner that only the portion (91) and the molded resin (9) are exposed.

Description

Technical Field

[0001] The present invention relates to semiconductor devices. Background Art

[0002] A semiconductor device in which a semiconductor integrated circuit is covered with a molding resin is widely known. The semiconductor device includes a lead frame connected to the semiconductor integrated circuit. The front end of the lead frame on the opposite side of the semiconductor integrated circuit is exposed from the molding resin. The exposed front end of the lead frame functions as a pin of the semiconductor device.

[0003] A structure in which the mold resin exposes a portion of the lead frame other than the front end is also widely known. For example, in Patent Document 1, three recesses are provided in the mold resin, and the terminal is exposed in each of the recesses.

[0004] The terminal is used for a decoupling capacitor having a function of suppressing power supply noise. Patent Document 1 exemplifies a case where a pair of terminals is provided at each of the recessed portions.

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 6-125035

[0006] In a semiconductor device, the fewer the locations where the conductive member is exposed by the molding resin, the higher the moisture resistance of the semiconductor device. Summary of the invention

[0007] An object of the present invention is to provide a semiconductor device having high moisture resistance.

[0008] The semiconductor device according to the present invention comprises: a first semiconductor integrated circuit having at least a first terminal and a second terminal; a first lead frame connected to the first terminal; a second lead frame connected to the second terminal; and a molding resin covering the first semiconductor integrated circuit. The molding resin further covers the first lead frame while partially exposing the first lead frame. The molding resin further covers the second lead frame while exposing the front end of the second lead frame on the opposite side to the second terminal. The molding resin includes a recessed portion, and the recessed portion is opened in a manner that only the partial portion and the molding resin are exposed.

[0009] Effects of the Invention

[0010] According to the present invention, a semiconductor device having high moisture resistance is obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a plan view illustrating the structure of the semiconductor device according to the first embodiment.

[0012] Figure 2 The semiconductor device according to the first embodiment Figure 1A cross-sectional view illustrating a cross section taken at position AA.

[0013] Figure 3 This is a circuit diagram illustrating the electrical connection relationship of the semiconductor device according to the first embodiment.

[0014] Figure 4 The semiconductor device according to the first embodiment Figure 1 A cross-sectional view illustrating a portion of a cross section at a position BB.

[0015] Figure 5 It is a plan view partially illustrating the connection relationship between the semiconductor device and wiring according to the first embodiment.

[0016] Figure 6 This is a plan view illustrating a modification of the semiconductor device according to the first embodiment.

[0017] Figure 7 It is local to Figure 6 A cross-sectional view illustrating a cross section at position CC.

[0018] Figure 8 This is a plan view illustrating the structure of a semiconductor device according to the second embodiment.

[0019] Fig. 9 The semiconductor device according to the second embodiment Figure 8 A cross-sectional view illustrating a cross section at position DD.

[0020] Fig.10 This is a circuit diagram illustrating the electrical connection relationship of the semiconductor device according to the second embodiment.

[0021] Fig.11 The semiconductor device according to the second embodiment Figure 8 A cross-sectional view illustrating a portion of a cross section at a position EE.

[0022] Fig.12 It is a plan view partially illustrating the connection relationship between the semiconductor device and wiring according to the second embodiment. DETAILED DESCRIPTION

[0023] <Implementation Method 1>

[0024] Figure 1This is a top view illustrating the structure of the semiconductor device 100A involved in the first embodiment. The semiconductor device 100A functions as an inverter that converts a DC voltage into a three-phase AC. The semiconductor device 100A realizes a bootstrap circuit by connecting an external capacitor called a boot strap capacitor (hereinafter referred to as "BSC"). The semiconductor device 100A is realized as an intelligent power module (e.g., DIPIPM (registered trademark)) in a transfer molded shape, for example.

[0025] Semiconductor device 100A includes a plurality of first wires 1, a diode group 2, a switch element group 3, an integrated circuit group 4, an element group 5, lead frames 601 to 624, a sheet 7, a plurality of second wires 8, and a molding resin 9. For improved visibility of the drawing, molding resin 9 is indicated by a two-dot chain line.

[0026] exist Figure 1 In the figure, the first conductor 1 is schematically represented by a thick dotted line. Figure 1 In the figure, the second conductive wire 8 is schematically indicated by a thick solid line. For example, the material of the first conductive wire 1 is aluminum. For example, the material of the second conductive wire 8 is gold.

[0027] The diode group 2 includes diodes 21 to 26. The diodes 21 to 26 function as so-called free wheeling diodes in the three-phase inverter.

[0028] The switching element group 3 includes switching elements 31 to 36. The switching elements 31, 32, and 33 function as what is generally referred to as an upper arm in the three-phase inverter. The switching elements 34, 35, and 36 function as what is generally referred to as a lower arm in the three-phase inverter.

[0029] The switch elements 31 to 36 are, for example, insulated gate bipolar transistors (hereinafter referred to as “IGBTs” for short). The switch elements 31 to 36 may also be field effect transistors.

[0030] Hereinafter, the case where the switching elements 31 to 36 are realized by IGBTs will be exemplified, and the name "IGBT" may be used instead of the name of the switching element. Each of the IGBTs 31 to 36 has an emitter, a collector, and a gate.

[0031] The integrated circuit group 4 includes semiconductor integrated circuits 10 and 11. The semiconductor integrated circuit 10 controls the switching elements 31, 32, and 33. The semiconductor integrated circuit 10 performs the function of a circuit generally called HVIC (high voltage integrated circuit). The semiconductor integrated circuit 11 controls the switching elements 34, 35, and 36. The semiconductor integrated circuit 11 performs the function of a circuit generally called LVIC (low voltage integrated circuit).

[0032] The element group 5 includes diodes 501, 502, and 503. The diodes 501, 502, and 503 function as boot strap diodes that form paths when charging the BSC. The diodes 501, 502, and 503 each have a built-in current limiting resistor that limits the current during the charging.

[0033] The lead frame 601 mounts the diode 501. The diode 501 is a chip diode, and its cathode is connected to the lead frame 601. The lead frame 607 is connected to the anode of the diode 501 through the second wire 8.

[0034] The lead frame 602 carries the diode 502. The diode 502 is a chip diode, and its cathode is connected to the lead frame 602. The lead frame 607 is connected to the anode of the diode 502 through the second wire 8.

[0035] The lead frame 603 carries the diode 503. The diode 503 is a chip diode, and its cathode is connected to the lead frame 603. The lead frame 607 is connected to the anode of the diode 503 through the second wire 8.

[0036] The lead frames 601 to 607 are connected to the semiconductor integrated circuit 10 via the second wire 8. Seven different terminals of the semiconductor integrated circuit 10 are connected to the lead frames 601 to 607 in a corresponding manner, respectively.

[0037] The lead frame 608 mounts the semiconductor integrated circuits 10 and 11 . One electrode of the semiconductor integrated circuit 10 and one electrode of the semiconductor integrated circuit 11 are connected to the lead frame 608 in common.

[0038] The lead frames 609 to 616 are connected to the semiconductor integrated circuit 11 via the second wire 8. Eight different terminals of the semiconductor integrated circuit 11 are connected to the lead frames 609 to 616 in a corresponding manner, respectively.

[0039] The lead frame 620 mounts the IGBT 36 and the diode 26 . The collector of the IGBT 36 and the cathode of the diode 26 are connected to the lead frame 620 .

[0040] The lead frame 621 mounts the IGBT 35 and the diode 25 . The collector of the IGBT 35 and the cathode of the diode 25 are connected to the lead frame 621 .

[0041] The lead frame 622 mounts the IGBT 34 and the diode 24 . The collector of the IGBT 34 and the cathode of the diode 24 are connected to the lead frame 622 .

[0042] The lead frame 623 carries the IGBTs 31, 32, 33 and the diodes 21, 22, 23. The collectors of the IGBTs 31, 32, 33 and the cathodes of the diodes 21, 22, 23 are connected to the lead frame 623. The diodes 21, 22, 23 are connected in parallel with the switching elements 31, 32, 33 and in opposite directions of conduction. The lead frame 624 is not electrically connected to other components.

[0043] The lead frame 617 is connected to the anode of the diode 26 and the emitter of the IGBT 36 via the first wire 1. The lead frame 618 is connected to the anode of the diode 25 and the emitter of the IGBT 35 via the first wire 1. The lead frame 619 is connected to the anode of the diode 24 and the emitter of the IGBT 34 via the first wire 1. The diodes 24, 25, and 26 are connected in parallel with respect to the switching elements 34, 35, and 36, respectively, and are connected in opposite directions of conduction.

[0044] The sheet 7 has insulating properties. The sheet 7 places the lead frames 620 , 621 , 622 , and 623 at least at positions where the diode group 2 and the switching element group 3 are placed. The sheet 7 dissipates heat from the diode group 2 and the switching element group 3 .

[0045] The mold resin 9 covers the plurality of first wires 1, the diode group 2, the switch element group 3, the integrated circuit group 4, the element group 5, the sheet 7, and the plurality of second wires 8. The mold resin 9 partially covers the lead frames 601 to 624, leaving the front ends of the lead frames 601 to 624 exposed.

[0046] The mold resin 9 includes recessed portions 141, 142, and 143. The recessed portion 141 exposes a portion 91 of the lead frame 601. The recessed portion 142 exposes a portion 92 of the lead frame 602. The recessed portion 143 exposes a portion 93 of the lead frame 603.

[0047] Figure 2 The semiconductor device 100A Figure 1 This is a cross-sectional view showing an example of a cross section at position AA. Figure 2 In FIG. 1 , for ease of understanding, the first conductive wire 1 and the second conductive wire 8 are shown to exemplify the connection relationship. Figure 2 In the figure, for easy understanding, the shadow of the molding resin 9 is omitted.

[0048] The molded resin 9 has surfaces 9a and 9b. For example, the sheet 7 may be exposed on the surface 9a. For example, the sheet 7 may be provided with a metal foil on the exposed surface. Figure 2 A direction Z from the surface 9b toward the surface 9a is added. Figure 1 Depicted as a top view along direction Z.

[0049] Lead frames 601 to 624 (see Figure 1 ) protrude from the mold resin 9 at a position sandwiched by the surfaces 9a and 9b, and bend in a direction opposite to the direction Z. The lead frames 601 to 624 at the portions protruding from the mold resin 9 function as leads of the semiconductor device 100A.

[0050] The recessed portion 142 opens at the surface 9b, exposing only the portion 92 and the molded resin 9. Similarly, the recessed portion 141 exposes only the portion 91 and the molded resin 9. Similarly, the recessed portion 143 exposes only the portion 93 and the molded resin 9.

[0051] Figure 3 1 is a circuit diagram illustrating the electrical connection relationship of the semiconductor device 100A. The semiconductor device 100A has terminals VUFB, VVFB, VWFB, UP, VP, WP, and VP1, and lead frames 601, 602, 603, 604, 605, 606, and 607 function as these terminals, respectively. The semiconductor integrated circuit 10 has terminals VCC, VUB, UP, VVB, VP, VWB, and WP, ​​and these terminals are connected to lead frames 607, 601, 604, 602, 605, 603, and 606, respectively.

[0052] The semiconductor device 100A has terminals UN, VN, WN, VN1, FO, CIN, and VOT, and lead frames 609, 610, 611, 612, 613, 614, and 616 function as these terminals, respectively. The semiconductor integrated circuit 11 has terminals VCC, VOT, UN, VN, WN, FO, and CIN, and these terminals are connected to lead frames 612, 616, 609, 610, 611, 613, and 614, respectively.

[0053] The semiconductor device 100A has two terminals VNC. The semiconductor integrated circuit 10 has a terminal COM, and the semiconductor integrated circuit 11 has a terminal GND. These terminals COM and GND are connected in common to one terminal VNC of the semiconductor device 100A (at Figure 3 In the embodiment, the lead frame 608 is connected to the terminal VNC shown at the top. The lead frame 608 functions as the terminal VNC.

[0054] The semiconductor integrated circuit 11 has a terminal GND and another terminal VNC (at Figure 3The lead frame 615 functions as the other terminal VNC.

[0055] The semiconductor device 100A has terminals NW, NV, NU, W, V, U, and P, and lead frames 617, 618, 619, 620, 621, 622, and 623 function as these terminals. The semiconductor integrated circuit 10 has terminals VUS, VVS, and VWS, which are connected to the lead frames 622, 621, and 620, respectively.

[0056] The semiconductor integrated circuit 10 has terminals UOUT, VOUT, and WOUT. The terminals UOUT, VOUT, and WOUT of the semiconductor integrated circuit 10 are connected to gates of the IGBTs 31, 32, and 33, respectively. The outputs from the terminals UOUT, VOUT, and WOUT of the semiconductor integrated circuit 10 control the operations of the switching elements 31, 32, and 33, respectively.

[0057] The semiconductor integrated circuit 11 has terminals UOUT, VOUT, and WOUT. The terminals UOUT, VOUT, and WOUT of the semiconductor integrated circuit 11 are connected to gates of the IGBTs 34, 35, and 36, respectively. Outputs from the terminals UOUT, VOUT, and WOUT of the semiconductor integrated circuit 11 control the operations of the switching elements 34, 35, and 36, respectively.

[0058] exist Figure 3 In the figure, parts 91, 92, and 93 are each represented by a hollow circular symbol.

[0059] The BSC is connected between the terminals VUB and VUS, between the terminals VVB and VVS, and between the terminals VWB and VWS of the semiconductor integrated circuit 10 , respectively, to realize a bootstrap circuit using the semiconductor device 100A.

[0060] The BSC connected between the terminals VUB and VUS is connected in series with the diode 501 and the IGBT 34 between the terminals VP1 and NU of the semiconductor device 100A. When the IGBT 34 is turned on by the signal from the terminal UOUT of the semiconductor integrated circuit 11, the BSC is charged. The BSC connected between the terminals VVB and VVS and the BSC connected between the terminals VWB and VWS are also charged in the same manner. These BSCs provide the power consumption of the semiconductor integrated circuit 10.

[0061] Since the operations of the semiconductor integrated circuits 10 and 11 operating together with the BSC, the diode group 2, the switch element group 3, and the element group 5 are well known, the details thereof are omitted in the present invention.

[0062] The portion 91 is exposed from the molding resin 9, and the lead frame 601 including the portion 91 is connected to the terminal VUB. Regarding the BSC connected between the terminals VUB and VUS, the first end portion serving as one electrode is connected to the portion 91, and the second end portion serving as the other electrode is connected to the terminal VUS via wiring outside the semiconductor device 100A and the lead frame 622 connected to the wiring.

[0063] The portion 92 is exposed from the molding resin 9, and the lead frame 602 including the portion 92 is connected to the terminal VVB. Regarding the BSC connected between the terminals VVB and VVS, the first end portion serving as one electrode is connected to the portion 92, and the second end portion serving as the other electrode is connected to the terminal VVS via wiring outside the semiconductor device 100A and the lead frame 621 connected to the wiring.

[0064] The portion 93 is exposed from the molding resin 9, and the lead frame 603 including the portion 93 is connected to the terminal VWB. Regarding the BSC connected between the terminals VWB and VWS, the first end portion serving as one electrode is connected to the portion 93, and the second end portion serving as the other electrode is connected to the terminal VWS via wiring outside the semiconductor device 100A and the lead frame 620 connected to the wiring.

[0065] When the semiconductor device 100A is used to realize a bootstrap circuit, the semiconductor device 100A does not necessarily have the terminals VUFB, VVFB, and VWFB. The leading ends of the lead frames 601 , 602 , and 603 may not be exposed from the molding resin 9 .

[0066] Figure 4 The semiconductor device 100A is shown together with a cross section of a portion of the wiring substrate 18. Figure 1 A cross-sectional view illustrating a portion of a cross section at a position BB.

[0067] Wiring substrate 18 includes wirings 181, 182, 183 and insulating substrate 180. Wirings 181, 182, 183 are provided on the same side with respect to substrate 180. Wirings 181, 182, 183 of wiring substrate 18 face surface 9b and are opposed to surface 9b.

[0068] The capacitors 171, 172, and 173 all function as BSCs. For example, the capacitors 171, 172, and 173 are all chip capacitors.

[0069] The capacitor 171 includes an end 171a (corresponding to the "first end" of the BSC) and an end 171b (corresponding to the "second end" of the BSC). The recess 141 has a shape that accommodates at least a portion of the capacitor 171. Figure 4In the example, the capacitor 171 is accommodated in the recess 141. It can also be said that the direction Z is the depth direction of the recess 141. For example, the direction from the end 171b toward the end 171a is the direction Z. The end 171a is electrically connected to the part 91 via the conductive material 161. The end 171b is electrically connected to the wiring 181 via the conductive material 151.

[0070] The capacitor 172 includes an end 172a (corresponding to the "first end" of the BSC) and an end 172b (corresponding to the "second end" of the BSC). The recess 142 has a shape that accommodates at least a portion of the capacitor 172. Figure 4 In the example of , the capacitor 172 is accommodated in the recess 142. It can also be said that the direction Z is the depth direction of the recess 142. For example, the direction from the end 172b toward the end 172a is the direction Z. The end 172a is electrically connected to the part 92 via the conductive material 162. The end 172b is electrically connected to the wiring 182 via the conductive material 152.

[0071] The capacitor 173 includes an end 173a (corresponding to the "first end" of the BSC) and an end 173b (corresponding to the "second end" of the BSC). The recess 143 has a shape that accommodates at least a portion of the capacitor 173. Figure 4 In the example of , the capacitor 173 is accommodated in the recess 143. It can also be said that the direction Z is the depth direction of the recess 143. For example, the direction from the end 173b toward the end 173a is the direction Z. The end 173a is electrically connected to the part 93 via the conductive material 163. The end 173b is electrically connected to the wiring 183 via the conductive material 153.

[0072] For example, solder is used as the conductive materials 151, 152, 153, 161, 162, and 163. Using solder as the conductive materials 151, 152, 153, 161, 162, and 163 facilitates soldering of the capacitors 171, 172, and 173 by reflow.

[0073] Figure 5 It is a plan view partially illustrating the connection relationship between the semiconductor device 100A and the wirings 181 , 182 , and 183 . Figure 5 It is depicted as a top view viewed from the direction opposite to the direction Z. It can be said that Figure 5 It is a plan view viewed from the semiconductor device 100A toward the substrate 180 .

[0074] Wiring 181 connects the front end of lead frame 622 and capacitor 171 (more specifically, end 171b). Wiring 182 connects the front end of lead frame 621 and capacitor 172 (more specifically, end 172b). Wiring 183 connects the front end of lead frame 620 and capacitor 173 (more specifically, end 173b). Figure 5 In the figure, the dotted lines are limited to representing the wirings 181, 182, 183 and the capacitors 171, 172, 173 to avoid complicated illustration.

[0075] exist Figure 5 Wires 184, 185, 186, 189, and 188 connected to lead frames 601, 602, 603, 623, and 624 are also depicted. Wires 184, 185, 186, 188, and 189 are provided on the same side of substrate 180 as wires 181, 182, and 183. Wire 188 is, for example, a pad. Figure 5 2 shows an example in which the wirings 181, 182, and 183 are arranged so as to have a path that bypasses the semiconductor device 100A in a plan view. The wirings 181, 182, and 183 may be arranged without such a bypass.

[0076] The wiring 181 connects the lead frame 622 and the end 171b of the capacitor 171. Figure 4 As shown, the local portion 91 is connected to the end 171a of the capacitor 171. Figure 3 As shown, the local part 91 is connected to the terminal VUB of the semiconductor integrated circuit 10. Figure 3 As shown, the terminal VUS of the semiconductor integrated circuit 10 is connected to the terminal U of the semiconductor device 100A. The lead frame 622 functions as the terminal U. The capacitor 171 is connected between the terminals VUB and VUS of the semiconductor integrated circuit 10 via the part 91, the wiring 181, and the lead frame 622, and functions as a BSC.

[0077] Similarly, capacitor 172 is connected between terminals VVB and VVS of semiconductor integrated circuit 10 via part 92, wiring 182, and lead frame 621, and functions as a BSC. Similarly, capacitor 173 is connected between terminals VWB and VWS of semiconductor integrated circuit 10 via part 93, wiring 183, and lead frame 620, and functions as a BSC.

[0078] [Description of Features 1A]

[0079] The features of the semiconductor device 100A can be described as follows. The semiconductor device 100A includes a semiconductor integrated circuit 10 , lead frames 601 and 622 , and a mold resin 9 . The mold resin 9 covers the semiconductor integrated circuit 10 .

[0080] The semiconductor integrated circuit 10 has at least terminals VUB and VUS. The lead frame 601 is connected to the terminal VUB. The lead frame 622 is connected to the terminal VUS. The molded resin 9 further covers the lead frame 601 while exposing a portion 91 of the lead frame 601. The molded resin 9 further covers the lead frame 622 while exposing the front end of the lead frame 622 on the opposite side of the terminal VUS.

[0081] The molded resin 9 includes a recessed portion 141 , and the recessed portion 141 is opened so that only the portion 91 and the molded resin 9 are exposed.

[0082] The above-described feature helps the portion 91 function as a terminal connected to the end 171a of the capacitor 171. The end 171b of the capacitor 171 is connected to the lead frame 622 via, for example, a wiring 181 provided outside the semiconductor device 100A.

[0083] The above description is appropriate even if the following corresponding relationships are used for renaming: lead frames 601 and 622 are respectively renamed as lead frames 602 and 621; terminals VUB and VUS are respectively renamed as terminals VVB and VVS; recess 141 and part 91 are respectively renamed as recess 142 and part 92; capacitor 171 and end portions 171a and 171b are respectively renamed as capacitor 172 and end portions 172a and 172b; and wiring 181 is renamed as wiring 182.

[0084] Alternatively, the above description is appropriate even if the following corresponding relationships are used for renaming: lead frames 601, 622 are renamed as lead frames 603, 620 respectively; terminals VUB, VUS are renamed as terminals VWB, VWS respectively; recess 141 and part 91 are renamed as recess 143 and part 93 respectively; capacitor 171 and end portions 171a, 171b are renamed as capacitor 173 and end portions 173a, 173b respectively; and wiring 181 is renamed as wiring 183.

[0085] The exposed terminal in recess 141 is only part 91, the exposed terminal in recess 142 is only part 92, and the exposed terminal in recess 143 is only part 93. The mold resin 9 is formed at each location to reduce the exposed portion of the lead frame. Therefore, semiconductor device 100A has high moisture resistance.

[0086] [Description of Features 2A]

[0087] The semiconductor device 100A can be further described as follows. The semiconductor device 100A further includes a diode 501, a semiconductor integrated circuit 11, lead frames 619, 623, and switching elements 31, 34. The semiconductor integrated circuit 10 further includes a terminal VCC.

[0088] The diode 501 has an anode and a cathode connected to the lead frame 601. The terminal VCC is connected to the anode of the diode 501. In the above example, the terminal VCC and the anode of the diode 501 are connected via the lead frame 607.

[0089] The switching elements 31 and 34 are covered with the molding resin 9. The switching element 31 is connected between the lead frames 623 and 622. The switching element 34 is connected between the lead frames 622 and 619.

[0090] The switch element 31 is a control target of the semiconductor integrated circuit 10 . The switch element 34 is a control target of the semiconductor integrated circuit 11 .

[0091] The recessed portion 141 has a shape that accommodates at least a portion of the capacitor 171. The capacitor 171 is charged via the diode 501 by the conduction of the switching element 34. The capacitor 171 functions as a BSC, for example.

[0092] The above description is appropriate even if the following corresponding relationships are used for renaming: diode 501 is renamed as diode 502; lead frames 601, 619, 622 are renamed as lead frames 602, 618, 621 respectively; switching elements 31, 34 are renamed as switching elements 32, 35 respectively; and recess 141 and capacitor 171 are renamed as recess 142 and capacitor 172 respectively.

[0093] Alternatively, the above description is appropriate even if the following corresponding relationships are used for renaming: diode 501 is renamed as diode 503; lead frames 601, 619, 622 are renamed as lead frames 603, 617, 620 respectively; switching elements 31, 34 are renamed as switching elements 33, 36 respectively; and recess 141 and capacitor 171 are renamed as recess 143 and capacitor 173 respectively.

[0094] [Description of Features 3]

[0095] Semiconductor device 100A can be further described as follows. Molding resin 9 also exposes the front end of lead frame 601 on the side opposite to terminal VUB, the front end of lead frame 602 on the side opposite to terminal VVB, and the front end of lead frame 603 on the side opposite to terminal VWB. Portion 91 is located between the front end of lead frame 601 and terminal VUB. Portion 92 is located between the front end of lead frame 602 and terminal VVB. Portion 93 is located between the front end of lead frame 603 and terminal VWB.

[0096] A voltage is applied to lead frames 601, 602, and 603 from outside semiconductor device 100A to obtain power consumption of semiconductor integrated circuit 10 without using bootstrapping. Specifically, for example, a DC voltage is applied between lead frames 601 and 622, between lead frames 602 and 621, and between lead frames 603 and 620.

[0097] [Transformation]

[0098] The shapes of the parts 91 , 92 , 93 exposed in the recesses 141 , 142 , 143 can be appropriately designed. Figure 6 This is a top view illustrating a modification of the semiconductor device according to the first embodiment. Figure 6 Only the recesses 141, 142, 143 and their vicinities are depicted. Figure 6 In the figure, surface 9b appears on the near side of the paper.

[0099] Figure 7 It is local to Figure 6 The cross-sectional view is an example of a cross-sectional view at the position CC. Figure 7 In the figure, the positions of the capacitor 171 and its end portions 171a and 171b are indicated by a virtual line using a two-dot chain line.

[0100] The portion 91 is bent at the recess 141. More specifically, for example, when viewed in the direction Z, the portion 91 is multi-layered. The portion 91 bent in this way functions as a leaf spring. At least a portion of the capacitor 171 is accommodated in the recess 141. If the portion 91 is pressed in the direction Z, the portion 91 applies a force to the capacitor 171 in the direction opposite to the direction Z. Due to this force, the capacitor 171, more specifically the end portion 171b of the capacitor 17, is pressed against the wiring 181 (see FIG. 14). Figure 4 ).

[0101] The function of the portion 91 as a leaf spring helps to avoid using the conductive materials 161, 151 (see Figure 4 ) technology for connecting the capacitor 171 between the lead frame 601 and the wiring 181.

[0102] The portion 92 is bent in the recess 142 in the same manner as the portion 91 in the recess 141 and functions as a leaf spring. This function helps to avoid using the conductive materials 162 and 152 (see Figure 4 ) technology for connecting the capacitor 172 between the lead frame 602 and the wiring 182.

[0103] The portion 93 bends in the recess 143 in the same manner as the portion 91 in the recess 141 and functions as a leaf spring. This function helps to avoid using the conductive materials 163 and 153 (see Figure 4 ) technology for connecting capacitor 173 between lead frame 603 and wiring 183.

[0104] exist Figure 6 The example in FIG. 1 shows a case where the directions in which the parts 91, 92, and 93 are bent are the same. The directions do not necessarily have to be the same.

[0105] <Implementation Method 2>

[0106] Figure 8 1 is a top view illustrating the structure of the semiconductor device 100B according to the second embodiment. The semiconductor device 100B also functions as an inverter for converting a DC voltage into a three-phase AC voltage, similarly to the semiconductor device 100A. The semiconductor device 100B realizes a bootstrap circuit by connecting an external BSC. The semiconductor device 100B is realized, for example, as an intelligent power module (e.g., DIPIPM (registered trademark)) of a transfer molded shape.

[0107] The semiconductor device 100B differs from the semiconductor device 100A in that, instead of exposing parts 91, 92, and 93 from the molding resin 9, parts 94 of the lead frame 622, parts 95 of the lead frame 621, and parts 96 of the lead frame 620 are exposed, and the semiconductor device 100B otherwise has the same structure as the semiconductor device 100A.

[0108] The molded resin 9 includes recessed portions 144, 145, and 146. The recessed portion 144 exposes the portion 94. The recessed portion 145 exposes the portion 95. The recessed portion 146 exposes the portion 96. Figure 8 The molding resin 9 is also indicated by a two-dot chain line.

[0109] Fig. 9 The semiconductor device 100B Figure 8 This is a cross-sectional view showing an example of a cross section at position DD. Fig. 9 In FIG. 1 , for ease of understanding, the first conductive wire 1 and the second conductive wire 8 are shown to exemplify the connection relationship. Fig. 9 In the figure, for easy understanding, the shadow of the molding resin 9 is omitted. Figure 8 Depicted as a top view along direction Z.

[0110] Fig.10 1 is a circuit diagram illustrating the electrical connection relationship of the semiconductor device 100B. Fig.10 In the figure, parts 94, 95, and 96 are each represented by a hollow circular symbol.

[0111] Fig.11 The semiconductor device 100B is shown together with a cross section of a portion of the wiring substrate 18. Figure 8 A cross-sectional view illustrating a portion of a cross section at a position EE.

[0112] Wiring substrate 18 includes wirings 184, 185, 186 and insulating substrate 180. Wirings 184, 185, 186 are provided on the same side with respect to substrate 180. Wirings 184, 185, 186 of wiring substrate 18 face surface 9b and are opposed to surface 9b.

[0113] The capacitors 174, 175, and 176 all function as BSCs. For example, the capacitors 174, 175, and 176 are all chip capacitors.

[0114] Capacitor 174 includes end 174a and end 174b. For example, the direction from end 174b toward end 174a is direction Z. End 174a is electrically connected to part 94 via conductive material 164. End 174b is electrically connected to wiring 184 via conductive material 154. Recess 144 has a shape that accommodates at least a portion of capacitor 174. Fig.11 In the example shown in FIG. 1 , capacitor 174 is housed in recess 144 .

[0115] Capacitor 175 includes end 175a and end 175b. For example, the direction from end 175b toward end 175a is direction Z. End 175a is electrically connected to part 95 via conductive material 165. End 175b is electrically connected to wiring 185 via conductive material 155. Recess 145 has a shape that accommodates at least a portion of capacitor 175. Fig.11 In the example, capacitor 175 is housed in recess 145 .

[0116] Capacitor 176 includes end 176a and end 176b. For example, the direction from end 176b toward end 176a is direction Z. End 176a is electrically connected to part 96 via conductive material 166. End 176b is electrically connected to wiring 186 via conductive material 156. Recess 146 has a shape that accommodates at least a portion of capacitor 176. Fig.11 In the example shown in FIG. 1 , capacitor 176 is housed in recess 146 .

[0117] For example, solder is used as the conductive material 154, 155, 156, 164, 165, 166. Using solder as the conductive material 154, 155, 156, 164, 165, 166 facilitates soldering of the capacitors 174, 175, 176 by reflow soldering.

[0118] Fig.12 It is a plan view partially illustrating the connection relationship between the semiconductor device 100B and the wirings 184 , 185 , and 186 . Fig.12 It is depicted as a top view viewed from the direction opposite to the direction Z. It can be said that Fig.12 It is a plan view viewed from the semiconductor device 100B toward the substrate 180 .

[0119] Wiring 184 connects the front end of lead frame 601 and capacitor 174 (more specifically, end 174b). Wiring 185 connects the front end of lead frame 602 and capacitor 175 (more specifically, end 175b). Wiring 186 connects the front end of lead frame 603 and capacitor 176 (more specifically, end 176b). Fig.12 In the figure, the dotted lines are limited to representing the wirings 184, 185, 186 and the capacitors 174, 175, 176 to avoid complicated illustration.

[0120] exist Fig.12 Wires 183, 182, 181, 189, and 188 are also shown connected to lead frames 620, 621, 622, 623, and 624, respectively. Wires 181, 182, 183, 188, and 189 are provided on the same side of substrate 180 as wires 184, 185, and 186. Fig.12 2 shows an example in which the wirings 184, 185, and 186 are arranged so as to be sandwiched between the semiconductor device 100B and the substrate 180 in a plan view. The wirings 184, 185, and 186 may be arranged so as to have a path that bypasses the semiconductor device 100B in a plan view.

[0121] The wiring 184 connects the lead frame 601 and the end 174b of the capacitor 174. Fig.11 As shown, the local portion 94 is connected to the end 174a of the capacitor 174. Fig.10 As shown, the local part 94 is connected to the terminal VUS of the semiconductor integrated circuit 10. Fig.10 As shown, the terminal VUB of the semiconductor integrated circuit 10 is connected to the terminal VUFB of the semiconductor device 100B. The lead frame 601 functions as the terminal VUFB. The capacitor 174 is connected between the terminals VUB and VUS of the semiconductor integrated circuit 10 via the part 94, the wiring 184, and the lead frame 601, and functions as a BSC.

[0122] Similarly, capacitor 175 is connected between terminals VVB and VVS of semiconductor integrated circuit 10 via part 95, wiring 185, and lead frame 602, and functions as a BSC. Similarly, capacitor 176 is connected between terminals VWB and VWS of semiconductor integrated circuit 10 via part 96, wiring 186, and lead frame 603, and functions as a BSC.

[0123] [Description of Features 1B]

[0124] The features of the semiconductor device 100B can be described as follows. The semiconductor device 100B includes a semiconductor integrated circuit 10 , lead frames 601 and 622 , and a mold resin 9 . The mold resin 9 covers the semiconductor integrated circuit 10 .

[0125] The semiconductor integrated circuit 10 has at least terminals VUB and VUS. The lead frame 601 is connected to the terminal VUB. The lead frame 622 is connected to the terminal VUS. The molded resin 9 further covers the lead frame 622 while exposing a portion 94 of the lead frame 622. The molded resin 9 further covers the lead frame 601 while exposing the front end of the lead frame 601 on the opposite side of the terminal VUB.

[0126] The molded resin 9 includes a recessed portion 144 , and the recessed portion 144 is opened so that only the portion 94 and the molded resin 9 are exposed.

[0127] The above-described feature helps the portion 94 function as a terminal connected to the end 174a of the capacitor 174. The end 174b of the capacitor 174 is connected to the lead frame 601 via, for example, a wiring 184 provided outside the semiconductor device 100B.

[0128] The above description is appropriate even if the following corresponding relationships are used for renaming: lead frames 601 and 622 are respectively renamed as lead frames 602 and 621; terminals VUB and VUS are respectively renamed as terminals VVB and VVS; recess 144 and part 94 are respectively renamed as recess 145 and part 95; capacitor 174 and end portions 174a and 174b are respectively renamed as capacitor 175 and end portions 175a and 175b; and wiring 184 is renamed as wiring 185.

[0129] The above description is appropriate even if the following corresponding relationships are used for renaming: lead frames 601 and 622 are renamed as lead frames 603 and 620 respectively; terminals VUB and VUS are renamed as terminals VWB and VWS respectively; recess 144 and part 94 are renamed as recess 146 and part 96 respectively; capacitor 174 and end portions 174a and 174b are renamed as capacitor 176 and end portions 176a and 176b respectively; and wiring 184 is renamed as wiring 186.

[0130] The exposed terminal in recess 144 is part 94, the exposed terminal in recess 145 is part 95, and the exposed terminal in recess 146 is part 96. The mold resin 9 is formed at each location to reduce the exposed lead frame. Therefore, semiconductor device 100B has high moisture resistance.

[0131] [Description of Features 2B]

[0132] The semiconductor device 100B can be further described as follows. The semiconductor device 100B further includes a diode 501, a semiconductor integrated circuit 11, lead frames 619, 623, and switching elements 31, 34. The semiconductor integrated circuit 10 further includes a terminal VCC.

[0133] The diode 501 has an anode and a cathode connected to the lead frame 601. The terminal VCC is connected to the anode of the diode 501. In the above example, the terminal VCC and the anode of the diode 501 are connected via the lead frame 607.

[0134] The switching elements 31 and 34 are covered with the molding resin 9. The switching element 31 is connected between the lead frames 623 and 622. The switching element 34 is connected between the lead frames 622 and 619.

[0135] The switch element 31 is a control target of the semiconductor integrated circuit 10 . The switch element 34 is a control target of the semiconductor integrated circuit 11 .

[0136] The recessed portion 144 has a shape that accommodates at least a part of the capacitor 174. The capacitor 174 is charged via the diode 501 by turning on the switching element 34. The capacitor 174 functions as a BSC.

[0137] The above description is appropriate even if the following corresponding relationships are used for renaming: diode 501 is renamed as diode 502; lead frames 601, 619, 622 are renamed as lead frames 602, 618, 621 respectively; switching elements 31, 34 are renamed as switching elements 32, 35 respectively; and recess 144 and capacitor 174 are renamed as recess 145 and capacitor 175 respectively.

[0138] Alternatively, the above description is appropriate even if the following corresponding relationships are used for renaming: diode 501 is renamed as diode 503; lead frames 601, 619, 622 are renamed as lead frames 603, 617, 620 respectively; switching elements 31, 34 are renamed as switching elements 33, 36 respectively; and recess 144 and capacitor 174 are renamed as recess 146 and capacitor 176 respectively.

[0139] <Transformation>

[0140] The shapes of the parts 94, 95, 96 exposed in the recesses 144, 145, 146 can be appropriately designed. Figure 7 Similar to the parts 91 , 92 , 93 illustrated in the example, the parts 94 , 95 , 96 are bent at the recessed parts 144 , 145 , 146 , respectively.

[0141] [Application Examples]

[0142] The switching elements 31 to 36 , the diodes 501 to 503 , 21 to 26 , and the semiconductor integrated circuits 10 and 11 all use Si (silicon) or SiC (silicon carbide) as a semiconductor material, for example.

[0143] The structure in which only a part of a lead frame and a molded resin are exposed in a recess is not limited to BSC, and can also be used together with other components such as a decoupling capacitor. The end of one of a pair of electrodes of the decoupling capacitor is electrically connected to the part exposed in the recess. The end of the other of the pair of electrodes is electrically connected to the wiring outside the semiconductor device including the molded resin having the recess. The recess has a shape that accommodates at least a part of the decoupling capacitor.

[0144] Furthermore, the various embodiments may be freely combined, and the various embodiments may be appropriately modified or omitted.

[0145] Description of the label

[0146] VUS, VUB, VVS, VVB, VWS, VWB, VCC terminals, 601~624 lead frames, 9 molding resin, 10, 11 semiconductor integrated circuits, 31~36 switching elements, 91~96 local parts, 100A, 100B semiconductor devices, 141~146 recesses, 501~503 diodes, Z direction.

Claims

1. A semiconductor device comprising: a first semiconductor integrated circuit having at least a first terminal and a second terminal; a first lead frame connected to the first terminal; a second lead frame connected to the second terminal; a molding resin covering the first semiconductor integrated circuit; as well as a switch element, which is covered by the molding resin and connected to the first semiconductor integrated circuit, The molding resin further covers the first lead frame so that a portion of the first lead frame is exposed. The molding resin further covers the second lead frame so that the front end of the second lead frame opposite to the second terminal is exposed. The mold resin includes a recessed portion in which only the portion of the first lead frame and the mold resin are exposed, and the recessed portion is provided to accommodate at least a portion of a bootstrap circuit including a capacitor that is charged when the switching element is turned on.

2. The semiconductor device according to claim 1, wherein The mold resin further exposes a front end of the first lead frame on the opposite side to the first terminal. The portion of the first lead frame is located between the front end of the first lead frame and the first terminal.

3. A semiconductor device comprising: a first semiconductor integrated circuit having at least a first terminal and a second terminal; a first lead frame connected to the first terminal; a second lead frame connected to the second terminal; a molding resin covering the first semiconductor integrated circuit; a diode having a first end and a second end connected to the first lead frame; 2nd semiconductor integrated circuit; 3rd lead frame; 4th lead frame; a first switch element as a control target of the first semiconductor integrated circuit, which is covered by the molding resin and connected between the third lead frame and the second lead frame; as well as a second switch element as a control target of the second semiconductor integrated circuit, which is covered by the molding resin and connected between the second lead frame and the fourth lead frame; The molding resin further covers the first lead frame so that a portion of the first lead frame is exposed. The molding resin further covers the second lead frame so that the front end of the second lead frame opposite to the second terminal is exposed. The molding resin includes a recessed portion, in which only the portion of the first lead frame and the molding resin are exposed. The first semiconductor integrated circuit further includes a third terminal connected to the first end of the diode. The recess has a shape that accommodates at least a portion of a capacitor that is charged via the diode when the second switching element is turned on.

4. The semiconductor device according to claim 3, wherein: The mold resin further exposes a front end of the first lead frame on the opposite side to the first terminal. The portion of the first lead frame is located between the front end of the first lead frame and the first terminal.

5. The semiconductor device according to any one of claims 1 to 4, wherein: The portion of the first lead frame is bent in the recessed portion so as to have multiple layers when viewed in the depth direction of the recessed portion.

6. A semiconductor device comprising: a first semiconductor integrated circuit having at least a first terminal and a second terminal; a first lead frame connected to the first terminal; a second lead frame connected to the second terminal; and a molding resin covering the first semiconductor integrated circuit, The molding resin further covers the first lead frame so that a portion of the first lead frame is exposed. The mold resin further covers the second lead frame so that the front end of the second lead frame opposite to the second terminal is exposed. The molding resin includes a recessed portion, in which only the portion of the first lead frame and the molding resin are exposed. The portion of the first lead frame is bent in the recessed portion so as to have multiple layers when viewed in the depth direction of the recessed portion.

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