A conductive bridge threshold conversion device and its preparation method

Abstract

The present invention belongs to the field of microelectronics and specifically discloses a conductive bridge threshold conversion device and a method for preparing the same. The conductive bridge threshold conversion device comprises a semiconductor substrate and a first metal electrode layer, a functional dielectric layer, and a second metal electrode layer sequentially disposed on the semiconductor substrate. The functional dielectric layer comprises a switching dielectric layer and a phase change material layer. The switching dielectric layer is configured to form conductive filaments under current or voltage excitation. Under certain conditions, the phase change material layer can, through phase separation, form two materials with different electrical conductivities or different ion permeabilities to induce the growth of the conductive filaments, while the switching dielectric layer does not undergo phase change under these conditions. The conductive bridge threshold conversion device of the present invention adds a layer of special phase change material to the functional dielectric layer of a traditional planar stacked structure. Utilizing the phase separation properties of the phase change material, the device reduces the randomness of conductive filament growth and suppresses excessive injection of active metal ions, thereby improving the switching performance of the device.

Description

Technical Field

[0001] The present invention belongs to the field of microelectronics technology, and more particularly, relates to a conductive bridge threshold conversion device and a preparation method thereof. Background Art

[0002] Since the 21st century, with the increasing computing power of personal computers and smart devices, the amount of data has exploded exponentially. The computation and storage of large amounts of data rely on high-speed, high-density, and low-power memory devices. Compared to flash memory, phase-change memory offers advantages such as high storage density, high write cycles, and fast read and write speeds, making it a promising candidate to replace flash memory as the next generation of commercial memory. In large-scale storage arrays, memory cells must be connected to gate transistors. This not only solves leakage current issues, but also significantly increases storage density through a stacked structure.

[0003] Currently, commonly used gate transistor devices mainly include: metal-insulator conversion gate transistors, bidirectional threshold conversion devices, mixed ion-electronic conductive gate transistors, barrier-type gate transistors, and conductive bridge threshold conversion devices. Among them, conductive bridge threshold conversion devices have extremely low leakage current and are suitable for low-power memory chips. In traditional planar stacked conductive bridge threshold conversion devices, because the external electric field is evenly distributed throughout the switching area, cations are randomly generated and injected throughout the electrode area, resulting in a decrease in device performance. Therefore, a device that can control the generation and migration of cations is needed to improve device reliability. Summary of the Invention

[0004] In response to the defects of the prior art, the purpose of the present invention is to provide a conductive bridge threshold conversion device and a preparation method thereof. On the basis of the original planar stacked structure conductive bridge threshold conversion device, a layer of special phase change material is added to the functional dielectric layer. The phase separation phenomenon existing in the phase change material is utilized to generate low-resistance and high-resistance regions. The electric field is concentrated in the low-resistance region, thereby inducing the generation and diffusion of conductive filaments in the region; at the same time, due to the difference in permeability of the two materials, it can prevent excessive diffusion of cations and prevent the device's off-state resistance from decreasing and ultimately preventing device failure. The purpose is to solve the problem of device performance degradation in the existing conductive bridge threshold conversion device structure due to the random generation and injection of excessive cations in the electric field region.

[0005] To achieve the above object, the present invention provides a conductive bridge threshold conversion device, which includes:

[0006] A semiconductor substrate and a first metal electrode layer, a functional dielectric layer, and a second metal electrode layer sequentially arranged on the semiconductor substrate;

[0007] The functional dielectric layer includes a switching dielectric layer and a phase change material layer. The switching dielectric layer is used to form a conductive filament under current or voltage excitation. Under certain conditions, the phase change material layer can form two materials with different electrical conductivities or different ion permeabilities through phase separation to induce the growth of the conductive filament, while the switching dielectric layer will not undergo phase change under these conditions.

[0008] Preferably, the phase change material layer is made of at least one of germanium telluride, antimony telluride, and germanium antimony telluride.

[0009] Preferably, the material of the switching dielectric layer is a sulfur compound.

[0010] Preferably, the material of the switching dielectric layer is GeSe x 、GeTe x 、GeS x 、GeSb x 、SbS x 、SbSe x 、SbTe x 、SbS x 、BiSe x 、BiTe x 、BiS x 、SnTe x At least one of .

[0011] Preferably, the material of the switching dielectric layer is GeSe x 、GeTe x 、GeS x 、GeSb x 、SbS x 、SbSe x 、SbTe x 、SbS x 、BiSe x 、BiTe x 、BiS x 、SnTe x At least one of the following elements is contained in the raw material, and at least one of the following elements is doped: S, N, O, Si, C, and B.

[0012] Preferably, the material of the switching dielectric layer is transition metal oxide.

[0013] Preferably, the material of the switch dielectric layer is TiO x , HfO x 、TaO x , VO x 、ZrO x At least one of .

[0014] Preferably, at least one of the first metal electrode layer and the second metal electrode layer is made of active metal.

[0015] According to another aspect of the present invention, a method for preparing a conductive bridge threshold conversion device is provided, comprising the following steps:

[0016] growing a first metal electrode layer on a semiconductor substrate;

[0017] growing a phase change material layer on the first metal electrode layer;

[0018] Raising the temperature to a phase separation temperature so that the phase change material layer undergoes phase separation;

[0019] growing a switching dielectric layer on the phase-separated phase change material layer;

[0020] A second metal electrode layer is grown on the switching dielectric layer.

[0021] According to another aspect of the present invention, a method for preparing a conductive bridge threshold conversion device is provided, comprising the following steps:

[0022] growing a first metal electrode layer on a semiconductor substrate;

[0023] growing a switching dielectric layer on the first metal electrode layer;

[0024] growing a phase change material layer on the switching dielectric layer;

[0025] Raising the temperature to a phase separation temperature so that the phase change material layer undergoes phase separation;

[0026] A second metal electrode layer is grown on the phase-separated phase-change material layer.

[0027] In general, the above technical solutions conceived by the present invention have the following beneficial effects compared with the prior art:

[0028] (1) The present invention provides a conductive bridge threshold conversion device with a novel material and structure. On the basis of the original conductive bridge threshold conversion device, a layer of phase change material is added between the gate tube functional dielectric layer and the electrode layer. During the device preparation process, the phase change material is separated by heating to form two materials with different electrical conductivities or permeabilities. Under materials with different electrical conductivities, the local electric field strength formed is different. The local electric field strength is high in places with high electrical conductivity, which can induce the growth of conductive filaments there, thereby reducing the randomness of the growth of conductive filaments. In addition, in materials with different permeabilities, the active electrode atoms are more likely to migrate in places with high permeabilities, so it is easier to form conductive filaments, which also reduces the randomness of the growth of conductive filaments. Moreover, due to the difference in material permeability, the excessive injection of active electrode atoms is hindered. Therefore, the conductive bridge threshold device with a novel material and structure provided by the present invention can improve its switching performance, improve the consistency and cycle characteristics of the device, and has the potential to be applied to large-scale memory arrays.

[0029] (2) The electrode layer in the threshold conversion device of the present invention is not limited to active metal electrodes or inert metal electrodes. The active electrode can provide mobile active metal ions, and the inert electrode can effectively prevent the active metal ions in the functional dielectric layer from diffusing into the electrode, thereby improving the cycle characteristics of the device.

[0030] (3) The preparation method of the threshold conversion device provided by the present invention is simple and easy to implement. By increasing the temperature, the phase change material is separated into two materials with different electrical conductivities or different ion permeabilities, thereby improving the performance of the threshold conversion device. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic structural diagram of a conductive bridge threshold conversion device provided in Example 1 of the present invention;

[0032] Figure 2 A schematic structural diagram of a conductive bridge threshold conversion device provided in Example 2 of the present invention;

[0033] Figure 3 A schematic structural diagram of another conductive bridge threshold conversion device provided by an embodiment of the present invention;

[0034] Figure 4 A flow chart of a method for preparing a conductive bridge threshold conversion device provided in Example 1 of the present invention;

[0035] Figure 5 A flow chart of a method for preparing a conductive bridge threshold conversion device provided in Example 2 of the present invention;

[0036] Throughout the drawings, the same reference numerals are used to denote the same elements or structures, wherein:

[0037] 100 - semiconductor substrate, 101 - first metal electrode layer, 102 - switching dielectric layer, 103 - phase change material layer, 104 - second metal electrode layer, 105 - conductive filament, 106 - insulating layer, 107 - protective layer, 108 - plug. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0039] The present invention provides a conductive bridge threshold conversion device, which includes: a semiconductor substrate 100 and a first metal electrode layer 101, a functional dielectric layer and a second metal electrode layer 104 sequentially arranged on the semiconductor substrate 100;

[0040] The functional dielectric layer includes a switching dielectric layer 102 and a phase change material layer 103. Specifically, the switching dielectric layer 102 may be located between the first metal electrode layer 101 and the phase change material layer 103. Figure 1 Alternatively, the switching dielectric layer 102 is located between the phase change material layer 103 and the second metal electrode layer 104, as shown. Figure 2 As shown, the switching dielectric layer 102 is used to form conductive filaments 105 under current or voltage stimulation. The switching dielectric layer 102 is a relatively stable material. Under certain conditions, the phase change material layer 103 can form two materials with different electrical conductivities or different ion permeabilities through phase separation to induce the growth of the conductive filaments 105. Under these conditions, the switching dielectric layer 102 does not undergo phase change.

[0041] When the phase change material layer 103 separates into two materials with different electrical conductivities, the electric field strengths in the local areas formed are different. The local electric field strength is higher in areas with high electrical conductivity, and conductive filaments are more inclined to grow in these areas, thereby reducing the randomness of the growth of the conductive filaments. In addition, when the phase change material layer 103 separates into two materials with different ion permeabilities, active electrode atoms migrate more easily in areas with high permeabilities, and conductive filaments are more easily formed there, which can also reduce the randomness of the growth of the conductive filaments. At the same time, due to the difference in material permeabilities, excessive injection of active electrode atoms is prevented.

[0042] The conditions involved here for causing the phase change material layer 103 to separate into phases may be increasing the temperature or increasing the pressure. However, for practicality and economic considerations, the phase separation of the phase change material is usually achieved by increasing the temperature during the device preparation process.

[0043] In some embodiments, such as Figure 3As shown, an insulating layer 106 is provided between the first metal electrode layer 101 and the functional dielectric layer to provide thermal insulation. The insulating layer 106 is preferably made of SiO2, Si3N4, or Al2O3. When the second metal electrode layer 104 is made of an active metal, a protective layer 107 is further provided on the second metal electrode layer 104. The protective layer 107 is made of an inert metal to protect the second metal electrode layer 104 from oxidation in the air.

[0044] In some embodiments, a plug column 108 may be provided in the threshold conversion device to achieve a self-heating effect. The provision of the plug column is beneficial to reducing the size of the semiconductor device to a certain extent, while improving the device's on / off ratio and consistency. Figure 3 As shown, an insulating layer 106 is provided on the first metal electrode layer 101, a through hole is etched in the insulating layer 106 by a deep hole etching process, and then a functional dielectric layer and a second metal electrode layer 104 are sequentially prepared on the insulating layer 106, thereby forming a plug 108 in the through hole.

[0045] In some embodiments, the phase change material layer 103 is made of at least one of germanium telluride, antimony telluride, and germanium antimony telluride.

[0046] In some embodiments, the material of the switching dielectric layer 102 is a chalcogenide compound. Preferably, the material has high thermal stability and is not prone to phase change, specifically GeSe. x 、GeTe x 、GeS x 、GeSb x 、SbS x 、SbSe x 、SbTe x 、SbS x 、BiSe x 、BiTe x 、BiS x 、SnTe x At least one of; or GeSe x 、GeTe x 、GeS x 、GeSb x 、SbS x 、SbSe x 、SbTe x 、SbS x 、BiSe x 、BiTe x 、BiS x 、SnTe x At least one of the following elements is contained in the raw material, and at least one of the following elements is doped: S, N, O, Si, C, and B.

[0047] In some embodiments, the material of the switching dielectric layer 102 is a transition metal oxide, preferably TiO x , HfO x 、TaO x , VO x 、ZrO x At least one of .

[0048] In some embodiments, at least one of the first metal electrode layer 101 and the second metal electrode layer 104 utilizes an active metal. Specifically, three solutions are possible: utilizing an inert metal for the first metal electrode layer 101 and an active metal for the second metal electrode layer 104; utilizing an active metal for the first metal electrode layer 101 and an inert metal for the second metal electrode layer 104; or utilizing active metals for both the first metal electrode layer 101 and the second metal electrode layer 104. Specifically, the active metal may be at least one of Ag, Cu, Co, and Fe; and the inert metal may be at least one of Pt, TiN, W, Au, Ru, TiW, and TaN.

[0049] The present invention provides a method for preparing a conductive bridge threshold conversion device, such as Figure 4 As shown, the following steps are included:

[0050] S1-1. Prepare a clean semiconductor substrate 100.

[0051] The semiconductor substrate 100 can be SiO2 / Si, Al2O3, etc. The substrate is sequentially placed in acetone, alcohol, and deionized water for ultrasonic cleaning. After cleaning, the residual liquid on the surface is blown dry with a nitrogen gun for standby use.

[0052] S1 - 2 : growing a first metal electrode layer 101 on the semiconductor substrate 100 .

[0053] During implementation, the first metal electrode layer 101 can be grown on the semiconductor substrate 100 by processes such as magnetron sputtering, vacuum evaporation, electron beam evaporation, chemical vapor deposition, and pulsed laser deposition, and its thickness can be adjusted according to design requirements.

[0054] S1 - 3 : growing a switching dielectric layer 102 on the first metal electrode layer 101 .

[0055] During implementation, a layer of switching dielectric material with a thickness of 10 nm to 20 nm may be grown on the surface of the first metal electrode layer 101 by processes such as magnetron sputtering, vacuum evaporation, electron beam evaporation, chemical vapor deposition, and pulsed laser deposition.

[0056] S1 - 4 : growing a phase change material layer 103 on the switching dielectric layer 102 .

[0057] During implementation, a thinner layer of phase change material with a thickness of 1 nm to 10 nm may be grown on the surface of the switching dielectric layer 102 by processes such as magnetron sputtering, vacuum evaporation, electron beam evaporation, chemical vapor deposition, and pulsed laser deposition.

[0058] S1 - 5 : Raising the temperature to the phase separation temperature to cause the phase change material layer 103 to undergo phase separation.

[0059] During the annealing process, the sample temperature is raised to the phase separation temperature, maintained for a period of time, and then lowered to room temperature. During the heating process, nitrogen gas is introduced to create a nitrogen atmosphere to prevent the sample from being oxidized.

[0060] S1 - 6 : growing a second metal electrode layer 104 on the phase-separated phase-change material layer 103 .

[0061] During implementation, the second metal electrode layer 104 is grown by magnetron sputtering, vacuum evaporation, electron beam evaporation, chemical vapor deposition, pulsed laser deposition and other processes, with a thickness of 100 nm to 900 nm.

[0062] The present invention provides another method for preparing a conductive bridge threshold conversion device, such as Figure 5 As shown, the following steps are included:

[0063] S2-1. Prepare a clean semiconductor substrate 100.

[0064] The semiconductor substrate 100 can be SiO2 / Si, Al2O3, etc. The substrate is sequentially placed in acetone, alcohol, and deionized water for ultrasonic cleaning. After cleaning, the residual liquid on the surface is blown dry with a nitrogen gun for standby use.

[0065] S2 - 2 , growing a first metal electrode layer 101 on the semiconductor substrate 100 .

[0066] During implementation, a first metal electrode layer 101 can be grown on the semiconductor substrate 100 by processes such as magnetron sputtering, vacuum evaporation, electron beam evaporation, chemical vapor deposition, and pulsed laser deposition, and its thickness can be adjusted according to design requirements.

[0067] S2 - 3 : growing a phase change material layer 103 on the first metal electrode layer 101 .

[0068] During implementation, a thin layer of phase change material with a thickness of 1nm-10nm can be grown on the sample formed after the above steps through processes such as magnetron sputtering, vacuum evaporation, electron beam evaporation, chemical vapor deposition, and pulsed laser deposition.

[0069] S2 - 4 : Raising the temperature to the phase separation temperature to cause the phase change material layer 103 to undergo phase separation.

[0070] During the annealing process, the sample temperature is raised to the phase separation temperature, maintained for a period of time, and then lowered to room temperature. During the heating process, nitrogen gas is introduced to create a nitrogen atmosphere to prevent the sample from being oxidized.

[0071] S2 - 5 : growing a switching dielectric layer 102 on the phase-separated phase-change material layer 103 .

[0072] During implementation, a layer of switching dielectric material with a thickness of 10nm-20nm is grown on the surface of the annealed sample through processes such as magnetron sputtering, vacuum evaporation, electron beam evaporation, chemical vapor deposition, and pulsed laser deposition.

[0073] S2 - 6 : growing a second metal electrode layer 104 on the switching dielectric layer 102 .

[0074] In implementation, after growing the switch dielectric layer 102 , a second metal electrode layer 104 with a thickness of 100 nm to 900 nm may be grown by processes such as magnetron sputtering, vacuum evaporation, electron beam evaporation, chemical vapor deposition, and pulsed laser deposition.

[0075] The preparation method provided by the present invention does not include a series of photolithography patterning steps. During actual implementation, the gate tube device pattern and the implementation method of the photolithography steps can be designed according to requirements.

[0076] The above technical solution is described in detail below in conjunction with specific embodiments.

[0077] Example 1

[0078] This embodiment provides a method for preparing a conductive bridge threshold conversion device, comprising the following steps:

[0079] (1) A SiO2 / Si semiconductor substrate was used, and the substrate was placed in acetone, alcohol, and deionized water for ultrasonic cleaning in sequence, with each cleaning lasting 10 minutes. After cleaning, the residual liquid on the surface was blown dry with a nitrogen gun for later use.

[0080] (2) Grow the first metal electrode layer on the SiO2 / Si substrate. The first metal electrode layer uses an Ag electrode with a thickness of 100 nm. The specific process is as follows: Set the background vacuum to 1×10 -4 And below, a 100nm Ag metal thin film electrode was grown on the SiO2 / Si substrate using a 40W DC power supply in an argon atmosphere of 0.5Pa.

[0081] (3) A phase change material layer is grown on the first metal electrode layer. The material used in the phase change material layer is Ge 0.15 Ga 0.25 Sb 0.6 , with a thickness of 10nm. The specific process is as follows: set the background vacuum degree to 1×10 -4A 10 nm Ge layer was grown on the Ag electrode using a 40 W DC power supply in an argon atmosphere at 0.5 Pa. 0.15 Ga 0.25 Sb 0.6 film.

[0082] (4) Annealing: The sample temperature is raised to 300°C and maintained for 10 minutes before being cooled to room temperature. The phase change material layer separates into a Sb-rich, low-Ga phase and a Ga-rich, low-Sb phase. The Sb-rich, low-Ga phase has high conductivity. During the heating process, nitrogen gas is introduced to create a nitrogen atmosphere to prevent oxidation of the sample.

[0083] (5) A switching dielectric layer is grown on the phase-change material layer after phase separation. The material used for the switching dielectric layer is GeSe with a thickness of 10 nm. The specific process is as follows: Set the background vacuum to 1×10 -4 And below, a 10 nm GeSe thin film was grown on the sample after step (4) using a 20 W DC power supply in an argon atmosphere of 0.5 Pa.

[0084] (6) A second metal electrode layer is grown on the switch dielectric layer. The second metal electrode layer is made of Pt and has a thickness of 100 nm. The specific process is as follows: Set the background vacuum to 1×10 -4 And below, a 100 nm thick Pt film was grown on the sample after step (5) using a 35 W DC power supply in an argon atmosphere of 0.5 Pa.

[0085] Example 2

[0086] This embodiment provides a method for preparing a conductive bridge threshold conversion device, comprising the following steps:

[0087] (1) A SiO2 / Si semiconductor substrate was used, and the substrate was placed in acetone, alcohol, and deionized water for ultrasonic cleaning in sequence, with each cleaning lasting 10 minutes. After cleaning, the residual liquid on the surface was blown dry with a nitrogen gun for later use.

[0088] (2) Grow the first metal electrode layer on the SiO2 / Si substrate. The first metal electrode layer uses a Pt electrode with a thickness of 100 nm. The specific process is as follows: Set the background vacuum to 1×10 -4 And below, a 100nm Pt metal thin film electrode was grown on a SiO2 / Si substrate using a 35W DC power supply in an argon atmosphere of 0.5Pa.

[0089] (3) A switching dielectric layer is grown on the first metal electrode layer. The material used for the switching dielectric layer is GeSe with a thickness of 10 nm. The specific process is as follows: Set the background vacuum to 1×10 -4And below, a 10 nm GeSe film was grown on the Pt electrode using a 20 W DC power supply in an argon atmosphere of 0.5 Pa.

[0090] (4) A phase change material layer is grown on the switch dielectric layer. The material used in the phase change material layer is Ge 0.15 Ga 0.25 Sb 0.6 , with a thickness of 10nm. The specific process is as follows: set the background vacuum degree to 1×10 -4 A 10 nm Ge layer was grown on a GeSe film using a 40 W DC power supply in an argon atmosphere at 0.5 Pa. 0.15 Ga 0.25 Sb 0.6 film.

[0091] (5) Annealing: The sample temperature is raised to 300°C and maintained for 10 minutes before being cooled to room temperature. The phase change material layer separates into a Sb-rich, low-Ga phase and a Ga-rich, low-Sb phase. The Sb-rich, low-Ga phase has high conductivity. During the heating process, nitrogen gas is introduced to create a nitrogen atmosphere to prevent oxidation of the sample.

[0092] (6) A second metal electrode layer is grown on the phase-separated phase change material layer. The second metal electrode layer uses an Ag electrode with a thickness of 100 nm. The specific process is as follows: Set the background vacuum to 1×10 -4 And below, a 100nm Ag metal thin film electrode is grown on the phase change material layer after phase separation using a 40W DC power supply in an argon atmosphere of 0.5Pa.

[0093] It will be easily understood by those skilled in the art that the above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A conductive bridge threshold conversion device, characterized in that: include: A semiconductor substrate and a first metal electrode layer, a functional dielectric layer, and a second metal electrode layer sequentially arranged on the semiconductor substrate; The functional dielectric layer includes a switching dielectric layer and a phase change material layer. The switching dielectric layer is used to form a conductive filament under current or voltage excitation. The phase change material layer is heated to a phase separation temperature during the preparation process, so that the phase change material layer undergoes phase separation, forming two materials with different electrical conductivities or different ion permeabilities to induce the growth of the conductive filament. Under this condition, the switching dielectric layer will not undergo phase change.

2. The conductive bridge threshold conversion device according to claim 1, wherein: The phase change material layer is made of at least one of germanium telluride, antimony telluride, and germanium antimony telluride.

3. The conductive bridge threshold conversion device according to claim 1, wherein: The material of the switching dielectric layer is a sulfur compound.

4. The conductive bridge threshold conversion device according to claim 3, wherein: The material of the switching dielectric layer is GeSe x 、GeTe x 、GeS x 、GeSb x 、SbS x 、SbSe x 、SbTe x 、SbS x 、BiSe x 、BiTe x 、BiS x 、SnTe x At least one of .

5. The conductive bridge threshold conversion device according to claim 3, wherein: The material of the switching dielectric layer is GeSe x 、GeTe x 、GeS x 、GeSb x 、SbS x 、SbSe x 、SbTe x 、SbS x 、BiSe x 、BiTe x 、BiS x 、SnTe x At least one of the following elements is contained in the raw material, and at least one of the following elements is doped: S, N, O, Si, C, and B.

6. The conductive bridge threshold conversion device according to claim 1, wherein: The material of the switching dielectric layer is transition metal oxide.

7. The conductive bridge threshold conversion device according to claim 6, wherein: The material of the switch dielectric layer is TiO x , HfO x 、TaO x , VO x 、ZrO x At least one of .

8. The conductive bridge threshold conversion device according to claim 1, wherein: At least one of the first metal electrode layer and the second metal electrode layer is made of active metal.

9. A method for preparing a conductive bridge threshold conversion device according to any one of claims 1 to 8, characterized in that: The steps include: growing a first metal electrode layer on a semiconductor substrate; growing a phase change material layer on the first metal electrode layer; Raising the temperature to a phase separation temperature so that the phase change material layer undergoes phase separation; growing a switching dielectric layer on the phase-separated phase change material layer; A second metal electrode layer is grown on the switching dielectric layer.

10. A method for preparing a conductive bridge threshold conversion device according to any one of claims 1 to 8, characterized in that: The steps include: growing a first metal electrode layer on a semiconductor substrate; growing a switching dielectric layer on the first metal electrode layer; growing a phase change material layer on the switching dielectric layer; Raising the temperature to a phase separation temperature so that the phase change material layer undergoes phase separation; A second metal electrode layer is grown on the phase-separated phase-change material layer.

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