Method for patterning quantum dot layer, method for manufacturing light-emitting device and related device

Abstract

The present invention discloses a method for patterning a quantum dot layer, a method for manufacturing a light-emitting device and related devices. The present invention first forms a film layer including a photosensitive material and quantum dots with ligands on the surface on a substrate; then uses light of a preset wavelength to irradiate a quantum dot retention area; under the irradiation of light of the preset wavelength, the photosensitive material or the product of the photosensitive material after light irradiation reacts with the ligands on the surface of the quantum dots, causing the ligands to fall off the surface of the quantum dots, and the solubility of the quantum dots without ligands changes, thereby causing the quantum dots to precipitate and the quantum dots can no longer be dissolved in the original solvent; finally, the film layer not irradiated by the light of the preset wavelength is removed to form a patterned quantum dot layer in the quantum dot retention area; compared with the prior art, the present invention does not need to use inkjet printing or photolithography to complete the patterning of the quantum dot layer, and can form high-resolution, high-performance quantum dots.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a method for patterning a quantum dot layer, a method for manufacturing a light-emitting device, and related devices. Background Art

[0002] With the in-depth development of quantum dot preparation technology, the stability and luminous efficiency of quantum dots are constantly improving, and the research on quantum dot electroluminescent diodes (QLED) is constantly deepening. The application prospects of QLED in the display field are becoming brighter and brighter. However, the production efficiency of QLED has not yet reached the level of mass production. The most important reason is that there has been no breakthrough in the high-resolution patterning technology of QLED.

[0003] Quantum dots are zero-dimensional nano-semiconductor materials. The sizes of the three dimensions of quantum dots are no greater than twice the exciton Bohr radius of the corresponding semiconductor material. When the existing technology manufactures patterned quantum dots, due to the inorganic nanoparticle characteristics of quantum dots, it is impossible to produce patterned quantum dots by evaporation film formation and patterning.

[0004] Therefore, existing technologies are unable to produce high-resolution, high-performance quantum dots. Summary of the invention

[0005] The embodiments of the present invention provide a method for patterning a quantum dot layer, a method for manufacturing a light-emitting device, and related devices, which are used to form quantum dots with high resolution and good performance.

[0006] Therefore, an embodiment of the present invention provides a method for patterning a quantum dot layer, comprising:

[0007] Forming a film layer including a photosensitive material and quantum dots with ligands on the surface on a substrate;

[0008] The quantum dot retention area is irradiated with light of a preset wavelength; wherein, under the irradiation of the light of the preset wavelength, the photosensitive material or the product of the photosensitive material after the light irradiation reacts with the ligand on the surface of the quantum dot, causing the ligand to fall off from the surface of the quantum dot, thereby changing the solubility of the quantum dot and causing the quantum dot to aggregate;

[0009] The film layer that is not irradiated by the light of the preset wavelength is removed to form a patterned quantum dot layer in the quantum dot retention area.

[0010] Optionally, in the patterning method provided in an embodiment of the present invention, the step of forming a film layer including a photosensitive material and quantum dots having ligands on the surface on a substrate specifically includes:

[0011] Mixing a photosensitive material and quantum dots with ligands on the surface to form a mixed solution;

[0012] The mixed solution is coated on the substrate to form the film layer.

[0013] Optionally, in the patterning method provided by an embodiment of the present invention, irradiating the quantum dot retention area with light of a preset wavelength specifically includes:

[0014] The film layer is shielded by a mask, wherein the mask comprises a light-transmitting area and a light-shielding area, wherein the light-transmitting area corresponds to a quantum dot-retaining area in the film layer that is irradiated with light.

[0015] Optionally, in the patterning method provided by an embodiment of the present invention, the removing of the film layer not irradiated by the light of the preset wavelength specifically includes:

[0016] The film layer irradiated by the light of the preset wavelength is cleaned with a solvent, wherein the quantum dots in the region of the film layer not irradiated by the light are dissolved in the solvent, and the quantum dots precipitated in the quantum dot retention region are not dissolved in the solvent.

[0017] Optionally, in the above patterning method provided by an embodiment of the present invention, after forming the patterned quantum dot layer, the method further comprises:

[0018] The quantum dot layer is dried and annealed.

[0019] Optionally, in the above-mentioned patterning method provided by an embodiment of the present invention, the ligands on the surface of the quantum dots include oxygen-coordinated ligands, nitrogen-coordinated ligands, phosphine-coordinated ligands or sulfur-coordinated ligands.

[0020] Optionally, in the patterning method provided in an embodiment of the present invention, the ligand on the surface of the quantum dots includes oleic acid, oleylamine, trioctylphosphine or dodecanethiol.

[0021] Optionally, in the above patterning method provided by an embodiment of the present invention, the photosensitive material includes a photoacid generator, an olefin substance or an alkyne substance.

[0022] Optionally, in the patterning method provided by an embodiment of the present invention, the mass of the photoacid generator accounts for 1%-20% of the mass of the mixed solution, and the mass of the olefin substance or the alkyne substance is 1-20 times of the mass of the mixed solution.

[0023] Correspondingly, an embodiment of the present invention further provides a method for manufacturing a light-emitting device, including manufacturing an anode, a quantum dot layer and a cathode, wherein the quantum dot layer is formed by the method for patterning a quantum dot layer provided in an embodiment of the present invention.

[0024] Correspondingly, an embodiment of the present invention further provides a quantum dot light-emitting device, comprising a stacked anode, a quantum dot layer and a cathode, wherein the percentage of the ligand mass on the surface of the quantum dots in the quantum dot layer to the total mass of the quantum dot layer is less than 10%.

[0025] Correspondingly, an embodiment of the present invention further provides a display device, comprising the above-mentioned quantum dot light-emitting device provided by an embodiment of the present invention.

[0026] Beneficial effects of the embodiments of the present invention:

[0027] The embodiments of the present invention provide a method for patterning a quantum dot layer, a method for manufacturing a light-emitting device, and related devices. The present invention first forms a film layer including a photosensitive material and quantum dots with ligands on the surface on a substrate; then uses light of a preset wavelength to irradiate the quantum dot retention area; under the irradiation of light of the preset wavelength, the photosensitive material or the product of the photosensitive material after light irradiation reacts with the ligands on the surface of the quantum dots, causing the ligands to fall off the surface of the quantum dots, and the solubility of the quantum dots without ligands changes, thereby causing the quantum dots to precipitate and the quantum dots can no longer be dissolved in the original solvent; finally, the film layer that has not been irradiated by the preset wavelength is removed to form a patterned quantum dot layer in the quantum dot retention area, that is, to complete the patterning of the quantum dot layer; compared with the prior art, the present invention does not need to use inkjet printing or photolithography to complete the patterning of the quantum dot layer, and can form high-resolution, good-performance quantum dots. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 One of the flow charts of the method for patterning a quantum dot layer provided in an embodiment of the present invention;

[0029] Figure 2 A schematic diagram of the principle of quantum dot patterning provided by an embodiment of the present invention;

[0030] Figure 3 A schematic diagram of the mechanism of the reaction between a photosensitive material and a quantum dot surface ligand provided in an embodiment of the present invention;

[0031] Figure 4 A schematic diagram of the mechanism of the reaction between another photosensitive material and a quantum dot surface ligand provided in an embodiment of the present invention;

[0032] Figure 5 A second flow chart of a method for patterning a quantum dot layer provided in an embodiment of the present invention;

[0033] Figure 6A-6L A schematic diagram of the structure of the method for patterning a quantum dot layer provided in an embodiment of the present invention after executing each step;

[0034] Figure 7A flow chart of a method for manufacturing a light emitting device provided in an embodiment of the present invention;

[0035] Figure 8 A schematic diagram of the structure of a quantum dot light-emitting device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solutions and advantages of the present invention clearer, the specific implementation methods of the quantum dot layer patterning method, the light-emitting device manufacturing method and related devices provided in the embodiments of the present invention are described in detail below in conjunction with the accompanying drawings.

[0037] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, but should not be construed as limiting the present invention.

[0038] The embodiment of the present invention provides a method for patterning a quantum dot layer, such as Figure 1 As shown, including:

[0039] S101, forming a film layer including a photosensitive material and quantum dots having ligands on the surface on a substrate;

[0040] S102, irradiating the quantum dot retention area with light of a preset wavelength; wherein, under the irradiation of the light of the preset wavelength, the photosensitive material or the product of the photosensitive material after light irradiation reacts with the ligand on the surface of the quantum dot, causing the ligand to fall off the surface of the quantum dot, thereby changing the solubility of the quantum dot and causing the quantum dot to aggregate;

[0041] S103, removing the film layer that is not irradiated by the light of the preset wavelength to form a patterned quantum dot layer in the quantum dot retention area.

[0042] The above-mentioned method for patterning a quantum dot layer provided by an embodiment of the present invention first forms a film layer including a photosensitive material and quantum dots with ligands on the surface on a substrate; then uses light of a preset wavelength to irradiate the quantum dot retention area; because under the irradiation of light of the preset wavelength, the photosensitive material or the product of the photosensitive material after light irradiation reacts with the ligands on the surface of the quantum dots, causing the ligands to fall off the surface of the quantum dots, and the solubility of the quantum dots without ligands changes, thereby causing the quantum dots to precipitate and the quantum dots can no longer be dissolved in the original solvent; finally, the film layer that has not been irradiated by light of the preset wavelength is removed to form a patterned quantum dot layer in the quantum dot retention area, that is, to complete the patterning of the quantum dot layer; compared with the prior art, the present invention does not need to use inkjet printing or photolithography to complete the patterning of the quantum dot layer, and can form high-resolution, good-performance quantum dots.

[0043] Specifically, the light of the preset wavelength in the embodiment of the present invention may be ultraviolet light of the preset wavelength.

[0044] Specifically, the present invention adds a certain amount of photosensitive material to the quantum dots, and after irradiation with ultraviolet light of a preset wavelength, the photosensitive material can generate corresponding ions, groups or free radicals under the ultraviolet light of the preset wavelength to tightly combine with the original ligands of the quantum dots, or the photosensitive material itself can react with the original ligands of the quantum dots to make the ligands fall off the surface of the quantum dots, so that the quantum dots are insoluble in the original solvent due to the lack of ligand materials, and the quantum dots in the area irradiated by ultraviolet light are precipitated, thereby achieving the purpose of patterning quantum dots. Specifically, the patterning principle of quantum dots is as follows: Figure 2 As shown, Figure 2 QD stands for quantum dot, 01 stands for the ligand on the surface of quantum dot, 02 stands for the photosensitive material generating corresponding ions, groups, free radicals or the photosensitive material itself under the irradiation of ultraviolet light of preset wavelength. Under the irradiation of ultraviolet light of preset wavelength, 02 combines with the ligand 01 on the surface of quantum dot QD, causing the ligand 01 to fall off the surface of quantum dot QD.

[0045] Specifically, in the photosensitive material provided by the embodiment of the present invention, different photosensitive materials can be added for different types of quantum dot ligands. The ligands on the surface of quantum dots generally include oxygen-coordinated ligands, nitrogen-coordinated ligands, phosphine-coordinated ligands or sulfur-coordinated ligands. Specifically, oxygen-coordinated ligands are generally carboxylates, nitrogen-coordinated ligands are generally amino-type, phosphine-coordinated ligands are generally phosphine-type, and sulfur-coordinated ligands are generally sulfhydryl-type. Specifically, the common carboxylate ligands on the surface of quantum dots are oleic acid, the common amino ligands are oleylamine, the common phosphine-type ligands are trioctylphosphine, and the common sulfhydryl ligands are dodecanethiol.

[0046] Specifically, the photosensitive material generally includes a photoacid generator, an olefin substance or an alkyne substance. When the ligand on the surface of the quantum dot is a carboxylate ligand, the doped photosensitive material can be: diazonaphthoquinone, triazine, trifluorosulfonate, etc. When the ligand on the surface of the quantum dot is a thiol ligand, the doped photosensitive material can be: olefins, alkynes, etc. Of course, the photosensitive material is not limited to a photoacid generator, an olefin substance or an alkyne substance, and the corresponding photosensitive material can be selected according to the type of ligand on the surface of the quantum dot.

[0047] For example, when the ligands on the surface of quantum dots are oleic acid (carboxylate) ligand quantum dots, the quantum dots can be mixed with an acid generator, and the acid generator can be used to generate hydrogen ions after being irradiated with ultraviolet light. The hydrogen ions can combine with carboxylates to form carboxylic acids. Therefore, the carboxylate ligands on the surface of the quantum dots fall off and no longer dissolve in the original solvent of the quantum dots. The quantum dots precipitate. The reaction mechanism of the precipitate of the carboxylate ligand quantum dots is as follows: Figure 3As shown; for example, when the ligand on the surface of the quantum dot is a dodecanethiol (thiol) ligand quantum dot, the quantum dot can be mixed with an olefin or an alkyne, and the thiol group and the olefin or the alkyne can undergo a click reaction under ultraviolet light, so that the thiol ligand on the surface of the quantum dot falls off and no longer dissolves in the original solvent of the quantum dot, and the quantum dot precipitates. The reaction mechanism of the thiol ligand quantum dot precipitate is as follows Figure 4 As shown; of course, the ligands on the surface of quantum dots can also be of other types. As long as a suitable photosensitive material can be provided that can react with the ligands on the surface of quantum dots under ultraviolet light, it falls within the scope of protection of the present invention.

[0048] Specifically, the quantum dots in the embodiments of the present invention include but are not limited to CdS, CdSe, ZnSe, InP, PbS, CsPbCl 3 、CsPbBr 3 , CsPhI 3 , CdS / ZnS, CdSe / ZnS, ZnSe, InP / ZnS, PbS / ZnS, CsPbCl 3 / ZnS、CsPbBr 3 / ZnS、CsPhI 3 / ZnS and other quantum dots.

[0049] In a specific implementation, in the above-mentioned patterning method provided in an embodiment of the present invention, the film layer that is not irradiated by light of a preset wavelength is removed. Specifically, a solvent can be used to clean the film layer after irradiation with light of a preset wavelength, wherein the quantum dots in the area of ​​the film layer that is not irradiated by light are dissolved in the solvent, and the quantum dots precipitated in the quantum dot retention area are not dissolved in the solvent. Therefore, a patterned quantum dot layer can be formed in the quantum dot retention area. The method of removing quantum dots by solvent is simpler and easier in the actual production process, and the production cost is lower.

[0050] Specifically, when a solvent is used to clean the film layer after being irradiated with light of a preset wavelength, residues other than the precipitated quantum dots in the quantum dot retention area, such as photosensitive materials that are not bound to ligands on the surface of the quantum dots, can also be removed.

[0051] In a specific implementation, in order to make the quantum dots in the patterned quantum dot layer densely aggregate to form a pattern, in the above-mentioned patterning method provided by the embodiment of the present invention, after forming the patterned quantum dot layer, the method further includes:

[0052] The quantum dot layer is dried and annealed. After drying and annealing, the quantum dot layer can be more densely precipitated. In specific implementation, the process parameters of drying and annealing can be set according to the actual production needs.

[0053] In order to achieve full-color display, the quantum dot layer generally includes patterned quantum dots of different colors. The embodiment of the present invention takes the quantum dot layer including the first quantum dot layer, the second quantum dot layer and the third quantum dot layer as an example, and introduces in detail the method for patterning the quantum dot layer provided in the embodiment of the present invention in combination with the accompanying drawings.

[0054] In specific implementation, in the above patterning method provided in the embodiment of the present invention, as Figure 5 As shown, a film layer including a photosensitive material and quantum dots with ligands on the surface is formed on a substrate, specifically including:

[0055] S501, mixing a photosensitive material and first quantum dots having ligands on the surface to form a first mixed solution;

[0056] S501, coating a first mixed solution on a substrate to form a first film layer;

[0057] Specifically, Fig. 6A As shown, the first mixed solution is coated on the substrate 1 by spin coating to form the first film layer 2. Fig. 6A QD represents the first quantum dot, 01 represents the ligand on the surface of the first quantum dot, and 02 represents the photosensitive material dispersed in the first mixed solution and not yet combined with the ligand 01.

[0058] In the specific implementation, in the above patterning method provided by the embodiment of the present invention, when the ligand on the surface of the quantum dot is a carboxylate ligand, the photosensitive material can be a photoacid generator, and the mass of the photoacid generator can account for 1%-20% of the mass of the above mixed solution; when the ligand on the surface of the quantum dot is a thiol ligand, the photosensitive material can be an olefin substance or an alkyne substance, and the olefin substance or the alkyne substance can be 1-20 times the mass of the mixed solution. In the specific implementation, the content of the photosensitive material can be set according to actual needs.

[0059] In specific implementation, Figure 6B As shown, light of a preset wavelength (indicated by the direction of the arrow in the figure) is used to irradiate the first quantum dot retention area AA, and the first quantum dot retention area AA corresponds to the area where the first quantum dot layer needs to be formed subsequently; in a specific implementation, in the above-mentioned patterning method provided in an embodiment of the present invention, ultraviolet light can be used to irradiate the first film layer 2. When irradiating the first film layer 2, a mask plate 3 can be used to shield the first film layer 2. The mask plate 3 includes a light-transmitting area 31 and a light-shielding area 32. The light-transmitting area 31 corresponds to the first quantum dot retention area AA in the first film layer 2 that is exposed to light.

[0060] like Figure 6C As shown, Figure 6CAfter the first film layer 2 is irradiated with ultraviolet light, the photosensitive material 02 in the first quantum dot retention area AA combines with the ligand 01 on the surface of the first quantum dot, and the ligand 01 falls off from the surface of the first quantum dot QD.

[0061] like Fig.6D As shown, a solvent (such as toluene) is used to clean the first film layer 2 after being irradiated with light, and the quantum dots QD in the film layer 2 that are not irradiated with light of a preset wavelength and the residues in the first quantum dot retention area AA except the precipitated quantum dots QD are dissolved in toluene and washed away. However, since there is no ligand 01 on the surface of the quantum dots in the first quantum dot retention area AA, they are not dissolved in toluene and precipitate, that is, the quantum dots QD precipitated in the first quantum dot retention area AA form a patterned first quantum dot layer 21.

[0062] Next, the photosensitive material and the second quantum dots with ligands on the surface are mixed to form a second mixed solution, such as Fig. 6E As shown, the second mixed solution is coated on the substrate 1 having the first quantum dot layer 21 by spin coating to form the second film layer 4. Fig. 6E QD represents the second quantum dot, 01 represents the ligand on the surface of the second quantum dot, and 02 represents the photosensitive material dispersed in the second mixed solution and not yet combined with the ligand 01.

[0063] In specific implementation, Fig. 6F As shown, light of a preset wavelength (indicated by the direction of the arrow in the figure) is used to irradiate the second quantum dot retention area BB of the second film layer 4, and the second quantum dot retention area BB corresponds to the area where the second quantum dot layer needs to be formed later; in specific implementation, in the above-mentioned patterning method provided in an embodiment of the present invention, ultraviolet light can be used to irradiate the second film layer 4. When irradiating the second film layer 4, the second film layer 4 can be shielded by a mask plate 3. The mask plate 3 includes a light-transmitting area 31 and a light-shielding area 32. The light-transmitting area 31 corresponds to the second quantum dot retention area BB in the second film layer 4 that is exposed to light.

[0064] like Figure 6G As shown, Figure 6G After the second film layer 4 is irradiated with ultraviolet light, the photosensitive material 02 in the second quantum dot retention area BB is combined with the ligand 01 on the surface of the second quantum dot, and the ligand 01 falls off from the surface of the second quantum dot.

[0065] like Figure 6HAs shown, a solvent (such as toluene) is used to clean the second film layer 4 after being irradiated with light, and the quantum dots in the second film layer that are not irradiated with light of a preset wavelength and the residues in the second quantum dot retention area BB except for the precipitated second quantum dots are dissolved in toluene and washed away, while the quantum dots in the second quantum dot retention area BB have no ligands 01 on their surfaces, and therefore do not dissolve in toluene and precipitate, that is, the second quantum dots precipitated in the second quantum dot retention area BB form a patterned second quantum dot layer 22.

[0066] Finally, the photosensitive material and the third quantum dots with ligands on the surface are mixed to form a third mixed solution, such as Fig.6I As shown, the third mixed solution is coated on the substrate 1 formed with the second quantum dot layer 22 by spin coating to form the third film layer 5. Fig.6I QD in the middle represents the third quantum dot, 01 represents the ligand on the surface of the third quantum dot, and 02 represents the photosensitive material dispersed in the third mixed solution and not yet combined with the ligand 01.

[0067] In specific implementation, Figure 6J As shown, light of a preset wavelength (indicated by the direction of the arrow in the figure) is used to irradiate the third quantum dot retention area CC of the third film layer 5, and the third quantum dot retention area CC corresponds to the area where the third quantum dot layer needs to be formed later; in specific implementation, in the above-mentioned patterning method provided in an embodiment of the present invention, ultraviolet light can be used to irradiate the third film layer 5. When irradiating the third film layer 5, the third film layer 5 can be shielded by a mask plate 3. The mask plate 3 includes a light-transmitting area 31 and a light-shielding area 32. The light-transmitting area 31 corresponds to the third quantum dot retention area CC in the film layer 2 that is exposed to light.

[0068] like Figure 6K As shown, Figure 6K After the third film layer 5 is irradiated with ultraviolet light, the photosensitive material 02 in the third quantum dot retention area CC combines with the ligand 01 on the surface of the third quantum dot, and the ligand 01 falls off from the surface of the third quantum dot.

[0069] like Figure 6L As shown, a solvent (such as toluene) is used to clean the third film layer 5 after being irradiated with light, and the third quantum dots in the third film layer 5 that are not irradiated with light of a preset wavelength and the residues in the third quantum dot retention area CC except for the precipitated third quantum dots are dissolved in toluene and washed away, while the third quantum dots in the third quantum dot retention area CC have no ligands 01 on their surfaces, and therefore do not dissolve in toluene and precipitate, that is, the precipitated third quantum dots in the third quantum dot retention area CC form a patterned third quantum dot layer 23.

[0070] In specific implementation, the colors of light emitted by the first quantum dot layer, the second quantum dot layer, and the third quantum dot layer in the embodiment of the present invention are red, green, and blue, respectively, so that the embodiment of the present invention completes the patterning process of full-color quantum dots through the above patterning method. The embodiment of the present invention can complete the patterning of the quantum dot layer without inkjet printing or photolithography, and can form high-resolution, high-performance quantum dots.

[0071] In a specific implementation, when the color of light emitted by the first quantum dot layer is red, the wavelength of the ultraviolet light used can be 405nm (H line); when the color of light emitted by the second quantum dot layer is green, the wavelength of the ultraviolet light used can be 365nm (I line); when the color of light emitted by the third quantum dot layer is blue, the wavelength of the ultraviolet light used can be 436nm (G line).

[0072] It should be noted that in the process of making the first quantum dot layer, the second quantum dot layer and the third quantum dot layer that emit light of different colors, the photosensitive materials can be the same or different. For example, if the ligand on the surface of the quantum dots is an oxygen-coordinated carboxylic acid ligand, the photosensitive material can be the same acid generator or different acid generators, as long as they can generate hydrogen ions and combine with carboxylate groups under the irradiation of light of a preset wavelength.

[0073] It should be noted that in the process of making the above-mentioned first quantum dot layer, second quantum dot layer and third quantum dot layer that emit light of different colors, assuming that the photosensitive materials used are the same, then the quantum dot retention area can be irradiated with light of the same preset wavelength, or the quantum dot retention area can be irradiated with light of different preset wavelengths; assuming that the photosensitive materials used are different, then the structures of the photosensitive materials corresponding to the three quantum dot layers are different, then the quantum dot retention area can be irradiated with light of different preset wavelengths. The choice of different wavelengths can be selected according to the structure of the photosensitive material, and of course, the same preset wavelength of light can also be selected according to the actual situation. The present invention does not limit this.

[0074] In a possible implementation, the above-mentioned preparation of the first quantum dot layer, the second quantum dot layer and the third quantum dot provided in the embodiment of the present invention can use the same wavelength of light to irradiate the first quantum dot retention area, the second quantum dot retention area and the third quantum dot retention area. Of course, the first quantum dot retention area can also be irradiated with H-line light to form a first quantum dot layer that emits red light, and the wavelength of the H line is 405nm; the second quantum dot retention area can be irradiated with I-line light to form a second quantum dot layer that emits green light, and the wavelength of the I line is 365nm; the quantum dot retention area can be irradiated with G-line light to form a third quantum dot layer that emits blue light, and the wavelength of the G line is 436nm.

[0075] Based on the same inventive concept, an embodiment of the present invention further provides a method for manufacturing a light-emitting device, including manufacturing an anode, a quantum dot layer and a cathode, wherein the quantum dot layer is formed by the above-mentioned quantum dot layer patterning method.

[0076] In the specific implementation, the light emitting device is divided into a positive structure and an inverted structure. Taking the light emitting device as a positive structure as an example, the light emitting device is formed, such as Figure 7 As shown, it may specifically include:

[0077] S701, forming an anode on the substrate by using a patterning process;

[0078] S702, sequentially forming a hole injection layer and a hole transport layer on the anode;

[0079] S703, forming a film layer including a photosensitive material and quantum dots having ligands on the surface on the hole transport layer;

[0080] S704, irradiating the quantum dot retention area with light of a preset wavelength; wherein, under the irradiation of the light of the preset wavelength, the photosensitive material or the product of the photosensitive material after light irradiation reacts with the ligand on the surface of the quantum dot, causing the ligand to fall off the surface of the quantum dot, thereby changing the solubility of the quantum dot and causing the quantum dot to aggregate;

[0081] S705, removing the film layer that is not irradiated by the light of the preset wavelength to form a patterned quantum dot layer in the quantum dot retention area;

[0082] S706, sequentially forming an electron transport layer and an electron injection layer on the quantum dot layer;

[0083] S707 , forming a cathode on the electron injection layer.

[0084] In a specific implementation, in order to make the quantum dot light-emitting device have better light-emitting performance, in the method for manufacturing the light-emitting device provided in the embodiment of the present invention, before forming a film layer including a photosensitive material and quantum dots with ligands on the surface on the hole transport layer, it also includes: forming an electron blocking layer on the hole transport layer;

[0085] Before forming the electron transport layer on the quantum dot layer, the method further includes: forming a hole blocking layer on the quantum dot layer.

[0086] Specifically, the specific manufacturing method of the electron blocking layer and the hole blocking layer is the same as that in the prior art, and will not be described in detail here.

[0087] In specific implementation, the specific methods of the above steps S701, S702, S706 and S707 provided in the specific embodiment of the present invention are the same as those in the prior art and will not be described in detail here; the above steps S703, S704 and S705 are similar to the above steps S101, S102 and S103 and will not be described in detail here.

[0088] Specifically, the substrate provided by the embodiment of the present invention may include a base substrate, a driving circuit located on the base substrate, and a passivation layer, a planarization layer and other structures located above the driving circuit.

[0089] In specific implementation, after the cathode is manufactured, the embodiment of the present invention further includes a packaging process, a cutting process, and a bonding process of the quantum dot light-emitting device. These processes are the same as those in the prior art and will not be described in detail here.

[0090] Combine the following Figure 8 A method for manufacturing a light-emitting device with an upright structure provided in an embodiment of the present invention is briefly described.

[0091] like Figure 8 As shown, before forming the anode 6, the surface of the substrate 1 is treated with plasma.

[0092] Next, the anode 6 is manufactured on the substrate 1 by using a patterning process. The manufacturing method of the anode 6 is the same as that in the prior art and will not be described in detail herein.

[0093] Next, a hole injection layer 7 is formed on the anode 6 by a spin coating process, and a hole transport layer 8 is formed on the hole injection layer 7 by a spin coating process. The material of the hole injection layer 7 can be PEDOT:PSS, etc., and the material of the hole transport layer 8 can be TFB, etc. The overall thickness of the hole injection layer 7 and the hole transport layer 8 can be 50nm-100nm; the manufacturing method of the hole injection layer 7 and the hole transport layer 8 is the same as the prior art and will not be described in detail here.

[0094] Next, a quantum dot layer including a first quantum dot layer 21 , a second quantum dot layer 22 and a third quantum dot layer 23 is formed on the hole transport layer 8 by using the above-mentioned quantum dot layer patterning method.

[0095] Next, the electron transport layer 9 and the electron injection layer 10 are sequentially manufactured on the quantum dot layer by spin coating or evaporation process. The material of the electron transport layer 9 may be ZnO nanoparticles, etc., and the material of the electron injection layer 10 may be LiF, etc.

[0096] Afterwards, a cathode 11 is evaporated on the electron injection layer 10. The material of the cathode can be LiF:Al, etc., and the thickness of the cathode can be 500nm-1000nm; the manufacturing method of the electron transport layer 9, the electron injection layer 10 and the cathode 11 is the same as the prior art and will not be described in detail here.

[0097] It should be noted that the embodiment of the present invention takes the light-emitting device as an upright structure as an example to illustrate its manufacturing method. When the light-emitting device is an inverted structure, the difference from the upright structure is that the inverted structure sequentially forms a cathode, an electron injection layer, an electron transport layer, a hole blocking layer, a light-emitting layer, an electron blocking layer, a hole transport layer, a hole injection layer and an anode on the substrate, which are not described in detail here.

[0098] Based on the same inventive concept, an embodiment of the present invention also provides a quantum dot light-emitting device, including a stacked anode, a quantum dot layer and a cathode, wherein the mass of the ligands on the surface of the quantum dots in the quantum dot layer is less than 10% of the total mass of the quantum dot layer. Specifically, the quantum dot layer in the quantum dot light-emitting device is formed by the patterning method of the quantum dot layer. When the patterned quantum dot layer is formed, the ligands on the surface of the quantum dots react with the photosensitive material and fall off from the surface of the quantum dots, causing the number of ligands on the surface of the quantum dots to be greatly reduced, thereby changing the solubility of the quantum dots, causing the quantum dots to precipitate, so as to achieve the patterning of the quantum dot layer. The inventor of this case has found that when the photosensitive material is not used to combine with the ligands on the surface of the quantum dots to cause the ligands to fall off, that is, the mass of the ligands on the surface of the quantum dots in the prior art is generally about 20% of the total mass of the quantum dot layer, and the ligands on the surface of the quantum dots in the embodiment of the present invention fall off, when the mass of the ligands on the surface of the quantum dots in the quantum dot layer is less than 10% of the total mass of the quantum dot layer, the quantum dots can be well precipitated without being dissolved in the original solvent.

[0099] Based on the same inventive concept, an embodiment of the present invention further provides a display device, including the above-mentioned quantum dot light-emitting device provided by an embodiment of the present invention.

[0100] In specific implementation, the display device provided in the embodiment of the present invention can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a laptop computer, a digital photo frame, a navigator, etc. Other essential components of the display device should be understood by ordinary technicians in the field, and will not be described in detail here, nor should they be used as limitations on the present invention. The implementation of the display device can refer to the embodiment of the quantum dot light-emitting device above, and the repeated parts will not be described in detail.

[0101] In specific implementation, the display device provided by the embodiment of the present invention may further include other functional film layers well known to those skilled in the art, which will not be described in detail here.

[0102] The embodiments of the present invention provide a method for patterning a quantum dot layer, a method for manufacturing a light-emitting device, and related devices. The present invention first forms a film layer including a photosensitive material and quantum dots with ligands on the surface on a substrate; then uses light of a preset wavelength to irradiate the quantum dot retention area; under the irradiation of light of the preset wavelength, the photosensitive material or the product of the photosensitive material after light irradiation reacts with the ligands on the surface of the quantum dots, causing the ligands to fall off the surface of the quantum dots, and the solubility of the quantum dots without ligands changes, thereby causing the quantum dots to precipitate and the quantum dots can no longer be dissolved in the original solvent; finally, the film layer that has not been irradiated by the preset wavelength is removed to form a patterned quantum dot layer in the quantum dot retention area, that is, to complete the patterning of the quantum dot layer; compared with the prior art, the present invention does not need to use inkjet printing or photolithography to complete the patterning of the quantum dot layer, and can form high-resolution, good-performance quantum dots.

[0103] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A method for patterning a quantum dot layer, characterized in that: include: Mixing a photosensitive material and quantum dots with ligands on the surface to form a mixed solution; Applying the mixed solution on a substrate to form a film layer of quantum dots; The quantum dot retention area is irradiated with light of a preset wavelength; wherein, under the irradiation of the light of the preset wavelength, the photosensitive material or the product of the photosensitive material after the light irradiation reacts with the ligand on the surface of the quantum dot, causing the ligand to fall off from the surface of the quantum dot, thereby changing the solubility of the quantum dot and causing the quantum dot to aggregate; The film layer that is not irradiated by the light of the preset wavelength is removed to form a patterned quantum dot layer in the quantum dot retention area.

2. The patterning method according to claim 1, characterized in that: The step of irradiating the quantum dot retention area with light of a preset wavelength specifically includes: The film layer is shielded by a mask, wherein the mask comprises a light-transmitting area and a light-shielding area, wherein the light-transmitting area corresponds to a quantum dot-retaining area in the film layer that is irradiated with light.

3. The patterning method according to claim 1, characterized in that: The removing of the film layer that is not irradiated by the light of the preset wavelength specifically includes: The film layer irradiated by the light of the preset wavelength is cleaned with a solvent, wherein the quantum dots in the region of the film layer not irradiated by the light are dissolved in the solvent, and the quantum dots precipitated in the quantum dot retention region are not dissolved in the solvent.

4. The patterning method according to claim 1, characterized in that: After forming the patterned quantum dot layer, the method further comprises: The quantum dot layer is dried and annealed.

5. The patterning method according to claim 1, characterized in that: The ligands on the surface of the quantum dots include oxygen-coordinated ligands, nitrogen-coordinated ligands, phosphine-coordinated ligands or sulfur-coordinated ligands.

6. The patterning method according to claim 5, characterized in that: The ligands on the surface of the quantum dots include oleic acid, oleylamine, trioctylphosphine or dodecanethiol.

7. The patterning method according to claim 1, characterized in that: The photosensitive material includes a photoacid generator, an olefin substance or an alkyne substance.

8. The patterning method according to claim 7, characterized in that: The mass of the photoacid generator accounts for 1%-20% of the mass of the mixed solution, and the mass of the olefin substance or the alkyne substance is 1-20 times of the mass of the mixed solution.

9. A method for manufacturing a light emitting device, comprising manufacturing an anode, a quantum dot layer and a cathode, characterized in that: The quantum dot layer is formed by the method for patterning a quantum dot layer as described in any one of claims 1 to 8.

10. A quantum dot light-emitting device manufactured by the manufacturing method according to claim 9, characterized in that: The invention comprises an anode, a quantum dot layer and a cathode which are stacked, wherein the percentage of the ligand mass on the surface of the quantum dots in the quantum dot layer to the total mass of the quantum dot layer is less than 10%.

11. A display device, characterized in that: Comprising the quantum dot light-emitting device as described in claim 10.

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