Substrate processing apparatus and substrate processing method

Abstract

The present inventive concepts provide a substrate processing apparatus and a substrate processing method. The substrate processing apparatus can include a support unit to support a substrate, a liquid supply unit to supply a liquid onto the substrate supported by the support unit, and a controller to control the liquid supply unit and the support unit, the liquid supply unit can include a pre-treatment nozzle to discharge a first treatment liquid in a flow pattern, and a main nozzle to discharge a second treatment liquid in a liquid curtain pattern, and the controller can control the support unit such that a rotation direction of the substrate when the first treatment liquid is discharged from the main nozzle and a rotation direction of the substrate when the second treatment liquid is discharged from the pre-treatment nozzle are opposite to each other.

Description

Technical Field

[0001] Embodiments of the inventive concepts described herein relate to substrate processing apparatuses and substrate processing methods. Background Art

[0002] The manufacturing process for semiconductor devices and flat panel display panels includes various processes, including photography, etching, ashing, thin film deposition, and cleaning. Among these processes, the photography process involves sequentially performing coating, exposure, and development steps. The coating process involves applying a photosensitive liquid, such as a resist, to the surface of a substrate. The exposure process involves exposing a circuit pattern on a substrate with a photosensitive film formed thereon. The development process selectively develops the pattern on the exposed substrate.

[0003] Typically, in the development process, a developer is supplied from a nozzle onto a rotating substrate to remove the photosensitive film. The nozzles used in the development process are primarily stream nozzles and slit nozzles. Stream nozzles have a circular discharge hole, while slit nozzles have a slit-shaped discharge hole.

[0004] When liquid treatment is performed on a substrate using a nozzle, various disadvantages exist. When using a stream nozzle for liquid treatment, a thinner liquid film is formed compared to a slit nozzle. Therefore, the development process takes longer when using a stream nozzle than when using a slit nozzle. Furthermore, when using a slit nozzle for liquid treatment, more stains are produced on the substrate compared to a stream nozzle. Therefore, the development efficiency may be lower when using a slit nozzle than when using a stream nozzle.

[0005] In addition, since the substrate continues to rotate in the same direction when the liquid treatment is performed on the rotating substrate, the photosensitive film can exist while having a tilt. For example, when the substrate continues to rotate in the same direction during the development process, as shown in FIG. Figure 1 As shown, the photosensitive film "A" is peeled off at a specific inclination, resulting in different slopes for the patterns on the substrate. Depending on the direction of substrate rotation, the slopes of a single pattern differ between one side S1 and the opposite side S2. Consequently, the photosensitive film "A" is located on one side S1, reducing substrate development efficiency. Specifically, when the developer has high viscosity, the difference in slope becomes significant. Summary of the Invention

[0006] Embodiments of the inventive concept provide apparatuses and methods for improving the efficiency of a liquid treatment process of a substrate.

[0007] Embodiments of the inventive concept also provide apparatuses and methods for compensating for disadvantages that occur when liquid processing is performed on a substrate by using a stream nozzle and a slit nozzle, respectively.

[0008] Embodiments of the inventive concept also provide apparatuses and methods for preventing a phenomenon in which a slope of a pattern becomes different when a substrate is subjected to liquid processing.

[0009] Aspects of the inventive concept are not limited thereto and other unmentioned aspects of the invention can be clearly understood from the following description by those skilled in the art.

[0010] The inventive concept provides a substrate processing apparatus.

[0011] In an example, a substrate processing apparatus can include a support unit to support a substrate, a liquid supply unit to supply a liquid onto the substrate supported by the support unit, and a controller to control the liquid supply unit and the support unit, the liquid supply unit can include a pre-treatment nozzle to discharge a first treatment liquid in a flow pattern, and a main nozzle to discharge a second treatment liquid in a liquid curtain pattern, and the controller can control the support unit such that a rotation direction of the substrate when the first treatment liquid is discharged from the main nozzle and a rotation direction of the substrate when the second treatment liquid is discharged from the pre-treatment nozzle are opposite to each other.

[0012] In an example, the controller can control the liquid supply unit such that the pre-treatment nozzle discharges the first treatment liquid onto the substrate at a position corresponding to a center region of the substrate.

[0013] In an example, the liquid supply unit can further include a support body on which the main nozzle is mounted, a support arm connected to the support body to be movable, and a driver to move the support arm, and the controller can control the driver such that a reference point of the main nozzle is changed from a center region of the substrate to an edge region of the substrate while the second treatment liquid is discharged onto the substrate.

[0014] In an example, the controller can control the driver such that a moving speed of the main nozzle is changed while the reference point of the main nozzle is changed from the center region of the substrate to the edge region of the substrate.

[0015] In an example, the controller can control the driver such that the moving speed of the main nozzle is lower in a region in which an aspect ratio of a pattern formed on the substrate is high, among all regions of the substrate.

[0016] In an example, the controller can control the support unit such that the substrate is rotated at a first speed when the pre-treatment nozzle discharges the first treatment liquid onto the substrate, the substrate is rotated at a second speed when the main nozzle discharges the second treatment liquid onto the substrate, and the first speed is higher than the second speed.

[0017] In an example, the liquid supply unit can further include a first treatment liquid supply line in which a first valve is installed and configured to supply the first treatment liquid to the pre-treatment nozzle, and a second treatment liquid supply line in which a second valve is installed and configured to supply the second treatment liquid to the main nozzle, and the controller can control the first valve and the second valve so that the pre-treatment nozzle discharges the first treatment liquid and then the main nozzle discharges the second treatment liquid.

[0018] In an example, the liquid supply unit can further include a rinse liquid nozzle that supplies a rinse liquid onto the substrate, and a rinse liquid supply line in which a third valve is installed and supplies the rinse liquid to the rinse liquid nozzle, and the controller can control the support unit so that the substrate rotates at a third speed when the rinse liquid nozzle discharges the rinse liquid onto the substrate, and the second speed is lower than the first speed and the third speed.

[0019] In an example, the controller can control the third valve so that the main nozzle discharges the second treatment liquid onto the substrate and then the rinse liquid nozzle discharges the rinse liquid.

[0020] In an example, the pre-treatment nozzle can discharge the first treatment liquid in a vertically downward direction, and the main nozzle can discharge the second treatment liquid in a downwardly inclined direction.

[0021] In an example, the first treatment liquid and the second treatment liquid can be the same liquid.

[0022] In an example, the first treatment liquid and the second treatment liquid can include a developer.

[0023] According to another aspect, a substrate processing apparatus can include a support unit that supports a substrate, a liquid supply unit that discharges a treatment liquid onto the substrate supported by the support unit, and a controller that controls the liquid supply unit and the support unit, the liquid supply unit can include a pre-treatment nozzle that has a flow discharge hole and discharges the treatment liquid in a flow mode, and a main nozzle that has a slit discharge hole and discharges the treatment liquid in a liquid curtain mode, the flow discharge hole has a circular shape, and the slit discharge hole has a slit shape, and the controller can control the support unit so that a rotation direction of the substrate when the treatment liquid is discharged from the main nozzle and a rotation direction of the substrate when the treatment liquid is discharged from the pre-treatment nozzle are opposite to each other.

[0024] In an example, the liquid supply unit can further include a support body on which the pre-treatment nozzle and the main nozzle are mounted.

[0025] In an example, the slit discharge hole can have a length direction facing a first direction, and the main nozzle and the pre-treatment nozzle can be disposed in a second direction perpendicular to the first direction when viewed from the top.

[0026] In an example, a length of the slit discharge hole can be less than a radius of the substrate supported by the support unit.

[0027] In an example, the slit discharge hole can be inclined downward in a direction facing the pre-treatment nozzle.

[0028] In an example, an end portion of the slit discharge hole can be positioned higher than an end portion of the flow discharge hole.

[0029] In an example, the liquid supply unit can further include a rinse liquid nozzle discharging a rinse liquid onto the substrate, and a nozzle body on which the rinse liquid nozzle is mounted.

[0030] In an example, the controller can control the liquid supply unit such that, after the pre-treatment nozzle supplies the treatment liquid onto the substrate, the main nozzle supplies the treatment liquid onto the substrate, and then the rinse liquid nozzle supplies the rinse liquid onto the substrate.

[0031] Further, the present inventive concept provides a substrate processing method. In an example, a method for liquid processing of a substrate by discharging a liquid onto a rotating substrate includes a pre-treatment operation of supplying a treatment liquid onto a substrate by a pre-treatment nozzle in a flow mode, and a main processing operation of supplying a treatment liquid onto a substrate by a main nozzle in a liquid curtain mode, and a rotation direction of the substrate in the pre-treatment operation and a rotation direction of the substrate in the main processing operation can be opposite to each other.

[0032] In an example, in the pre-treatment operation, the treatment liquid can be discharged at a position corresponding to a central region of the substrate.

[0033] In an example, in the main processing operation, the treatment liquid can be discharged while a reference point changes from a central region of the substrate to an edge region of the substrate.

[0034] In an example, in the main processing operation, a moving speed of the main nozzle can vary.

[0035] In an example, in the main processing operation, among all regions of the substrate, in a region in which an aspect ratio of a pattern formed on the substrate is high, the moving speed of the main nozzle can be low.

[0036] In an example, the substrate can be rotated at a first speed in the pre-treatment operation, the substrate can be rotated at a second speed in the main treatment operation, and the first speed can be higher than the second speed.

[0037] In an example, the pre-treatment operation can further include an initial pre-treatment operation of rotating the substrate at an initial pre-treatment speed, a later pre-treatment operation of rotating the substrate at a later pre-treatment speed after the initial pre-treatment operation, and the later pre-treatment speed can be higher than the initial pre-treatment speed.

[0038] In an example, the intermediate pre-treatment operation of rotating the substrate to an intermediate pre-treatment speed can further include between the initial pre-treatment operation and the later pre-treatment operation, and the intermediate pre-treatment speed can be lower than the initial pre-treatment speed.

[0039] In an example, the main treatment operation can further include an initial main treatment operation of rotating the substrate at an initial main treatment speed, an intermediate main treatment operation of rotating the substrate to an intermediate main treatment speed after the initial main treatment operation, and a later pre-treatment operation of rotating the substrate at a later main treatment speed after the intermediate main treatment operation, and the intermediate main treatment speed can be lower than the initial main treatment and later main treatment speeds.

[0040] In an example, the initial main treatment speed and the later main treatment speed can be the same.

[0041] In an example, the initial main treatment speed and the later main treatment speed can be higher than the intermediate main treatment speed.

[0042] In an example, the main treatment operation can further include a rinse liquid supply operation of supplying a rinse liquid onto the substrate after performing the main treatment operation, and in the rinse liquid supply operation, the substrate can be rotated at a third speed and the second speed can be lower than the first speed and the third speed.

[0043] In an example, the third speed can be higher than the second speed.

[0044] In an example, the rotation speed of the substrate can vary in the rinse liquid supply operation.

[0045] In an example, the rinse liquid supply operation can further include a first rotation operation of rotating the substrate at a first rotation speed and a second rotation operation of rotating the substrate at a second rotation speed lower than the first rotation speed, and the first rotation operation and the second rotation operation can be sequentially repeated.

[0046] In an example, in the pre-treatment operation, the treatment liquid is discharged in a vertically downward direction, and in the main treatment operation, the treatment liquid can be discharged in a downward inclined direction.

[0047] In an example, the treatment liquid can be a developer. BRIEF DESCRIPTION OF DRAWINGS

[0048] The above and other objects and features will become apparent from the following description taken in conjunction with the following drawings, wherein like reference numerals designate identical parts throughout the various figures, and wherein:

[0049] Figure 1 is a view schematically showing an embodiment in an overall improved form;

[0050] Figure 2 is a plan view showing a substrate processing system according to an embodiment of the present inventive concept;

[0051] Figure 3 is a sectional view of the system of Figure 2 taken along line A-A thereof; Figure 2

[0052] Figure 4 is a sectional view of the system of Figure 1 taken along line B-B thereof; Figure 2

[0053] Figure 5 is a sectional view of the system of Figure 2 taken along line C-C thereof; Figure 2

[0054] Figure 6 is a sectional view of a substrate processing apparatus of Figure 2 ;

[0055] Figure 7 is a plan view of a substrate processing apparatus of Figure 6 ;

[0056] Figure 8 is a perspective view of a nozzle unit of Figure 6 ;

[0057] Figure 9 is a plan view showing a process of processing a substrate by using a substrate processing apparatus of Figure 7 ;

[0058] Figures 10 to 14 are views sequentially showing a process of processing a substrate by using a substrate processing apparatus of Figure 7 ;

[0059] Figure 15 is a view showing a substrate processing method according to the present inventive concept in a graph over time; and

[0060] Figures 16 to 18 are views showing other examples of a substrate processing method according to the present inventive concept in graphs over time, respectively. DETAILED DESCRIPTION​​​

[0061] Hereinafter, embodiments of the inventive concept will be described in greater detail with reference to the accompanying drawings. Embodiments of the present application can be modified in various forms, and the scope of the inventive concept should not be construed as being limited to the following embodiments. Embodiments of the inventive concept are provided to more completely describe the present application to one of ordinary skill in the art. Accordingly, the shape of components of the drawings is exaggerated for the sake of clearer description.

[0062] The system of the present embodiment of the inventive concept can be used to perform a photo process on a substrate such as a semiconductor substrate or a flat panel display substrate. Specifically, the system of the present embodiment can be connected to an exposure apparatus to perform a coating process and a developing process on a substrate. Hereinafter, a case where a substrate is used as a substrate will be described as an example.

[0063] Figure 2 is a plan view of a substrate processing system according to an embodiment of the inventive concept. Figure 3 is a cross-sectional view of the system of Figure 2 taken along line A-A thereof. Figure 2 is a cross-sectional view of the system of Figure 4 taken along line B-B thereof. Figure 1 is a cross-sectional view of the system of Figure 2 taken along line C-C thereof. Figure 5 is a cross-sectional view of the system of Figure 2 taken along line B-B thereof. Figure 2 is a cross-sectional view of the system of

[0064] Referring to Figures 2 to 5 , the substrate processing system 1 includes a load port 100, an indexing module 200, a first buffer module 300, a coating / developing module 400, a second buffer module 500, a pre / post exposure processing module 600, and an interface module 700. The load port 100, the indexing module 200, the first buffer module 300, the coating / developing module 400, the second buffer module 500, the pre / post exposure processing module 600, and the interface module 700 are sequentially arranged in one direction in a row.

[0065] Hereinafter, the direction in which the load port 100, the indexing module 200, the first buffer module 300, the coating / developing module 400, the second buffer module 500, the pre / post exposure processing module 600, and the interface module 700 are arranged will be referred to as a first direction 12, and a direction perpendicular to the first direction 12 when viewed from the top will be referred to as a second direction 14, and a direction perpendicular to the first direction 12 and the second direction 14 will be referred to as a third direction 16.

[0066] The substrate "W" is moved while being received in the cassette 20. Then, the cassette 20 has a structure that is sealed from the outside. For example, a front opening unified pod (FOUP) can be used as the cassette 20, which has a door on a front side.

[0067] Hereinafter, the load port 100, the indexing module 200, the first buffer module 300, the coating / developing module 400, the second buffer module 500, the pre / post exposure processing module 600, and the interface module 700 will be described in detail.

[0068] The load port 100 has carriers 120 on which the cassettes 20 receiving the substrates "W" are positioned. A plurality of carriers 120 are provided and arranged in a row along the second direction 14. In the load port 100, the carriers 120 are arranged in two rows along the first direction 12. Figure 3 In the present embodiment, four carriers 120 are provided.

[0069] The indexing module 200 feeds the substrate "W" between the cassette 20 positioned on the carrier 120 of the load port 100 and the first buffer module 300. The indexing module 200 has a frame 210, an indexing robot 220, and a guide rail 230. The frame 210 has a substantially cuboid shape including a hollow interior, and is provided between the load port 100 and the first buffer module 300. The height of the frame 210 of the indexing module 200 can be smaller than the height of the frame 310 of the first buffer module 300, which will be described below. The indexing robot 220 and the guide rail 230 are provided in the frame 210. The indexing robot 220 has a four-axis drive structure so that a hand 221 directly handling the substrate "W" can move and rotate in the first direction 12, the second direction 14, and the third direction 16. The indexing robot 220 has the hand 221, an arm 222, a support 223, and a strut 224. The hand 221 is fixedly mounted in the arm 222. The arm 222 has a flexible and rotatable structure. The support 223 is configured so that the length direction thereof is arranged along the third direction 16. The arm 222 is coupled to the support 223 so as to be movable along the support 223. The support 223 is fixedly coupled to the strut 224. The guide rail 230 is arranged so that the length direction thereof is arranged along the second direction 14. The strut 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Although not shown, the frame 210 is also provided with a door opener that opens and closes the door of the cassette 20.

[0070] The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 has a cuboid shape including a blank interior, and is disposed between the indexing module 200 and the coating / developing module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are disposed in order from the bottom along the third direction 16. The first buffer 320 is located at a height corresponding to a coating module 401 of the coating / developing module 400, which will be described below, and the second buffer 330 and the cooling chamber 350 are located at a height corresponding to a developing module 402 of the coating / developing module 400, which will be described below. The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350, and the first buffer 320 by a predetermined distance in the second direction 14.

[0071] The first buffer 320 and the second buffer 330 temporarily hold a plurality of substrates "W". The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and spaced apart from each other along the third direction 16. One substrate "W" is positioned on each of the supports 332. The housing 331 has an opening (not shown) on a side on which the indexing robot 220 is disposed, on a side on which the first buffer robot 360 is disposed, and on a side on which the developing robot 482 is disposed, so that the indexing robot 220, the first buffer robot 360, and the developing robot 482 of the developing module 402 (which will be described below) bring a substrate "W" into or out of the supports 332 in the housing 331. The structure of the first buffer 320 is substantially similar to that of the second buffer 330. Meanwhile, the housing 321 of the first buffer 320 has an opening on a side on which the first buffer robot 360 is disposed, and on a side on which a coating robot 432 (which will be described below) located in the coating module 401 is disposed. The number of supports 322 provided for the first buffer 320 and the number of supports 332 provided for the second buffer 330 can be the same or different. According to an embodiment, the number of supports 332 provided for the second buffer 330 can be greater than the number of supports 332 provided for the first buffer 320.

[0072] The first buffer robot 360 feeds the substrate "W" between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support 363. The hand 361 is fixedly installed in the arm 362. The arm 362 has a flexible structure and allows the hand 361 to move in the second direction 14. The arm 362 is coupled to the support 363 to be linearly movable in the third direction 16 along the support 363. The support 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support 363 can be provided to extend upward or downward longer. The first buffer robot 360 can be provided such that the hand 361 is driven in only two axes along the second direction 14 and the third direction 16.

[0073] The cooling chamber 350 cools the substrate "W". The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has a cooling unit 353 which cools an upper surface on which the substrate "W" is positioned and the substrate "W". Various types such as a cooling type using cooling water and a cooling type using a thermoelectric element can be used as the cooling unit 353. A lift pin assembly (not shown) which positions the substrate "W" on the cooling plate 352 can be provided in the cooling chamber 350. The housing 351 has an opening (not shown) on a side on which the indexing robot 220 is provided and on a side on which the developing robot 482 is provided, such that the indexing robot 220 and the developing robot 482 which are provided for developing the robot 402 to be described below bring the substrate "W" into or out of the cooling plate 352. A door (not shown) which opens and closes the above-described opening can be provided in the cooling chamber 350.

[0074] The coating / developing module 400 performs a process of coating a photoresist onto the substrate "W" before an exposure process and a process of developing the substrate "W" after the exposure process. The coating / developing module 400 has a substantially rectangular parallelepiped shape. The coating / developing module 400 has a coating module 401 and a developing module 402. The coating module 401 and the developing module 402 can be provided to be separated from each other in different layers. According to an example, the coating module 401 is located on the developing module 402.

[0075] The coating module 401 performs a process of coating a photosensitive liquid such as a photoresist onto the substrate "W" and a heat treatment process of heating and cooling the substrate "W" before and after the resist coating process, for example. The coating module 401 has a resist coating chamber 410, a baking chamber 420, and a transport chamber 430. The resist coating chamber 410, the baking chamber 420, and the transport chamber 430 are arranged in series along the second direction 14. Thus, the resist coating chamber 410 and the baking chamber 420 are spaced apart from each other in the second direction 14, and the transport chamber 430 is interposed therebetween. A plurality of resist coating chambers 410 can be provided, and a plurality of resist coating chambers 410 can be provided in each of the first direction 12 and the third direction 16. In the drawing, six resist coating chambers 410 are shown as an example. A plurality of baking chambers 420 can be provided in each of the first direction 12 and the third direction 16. In the drawing, six baking chambers 420 are shown as an example. However, unlike this, a larger number of baking chambers 420 can be provided.

[0076] The transport chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. A coating robot 432 and a guide rail 433 can be located in the transport chamber 430. The transport chamber 430 has a substantially rectangular shape. The coating robot 432 feeds the substrate "W" between the baking chamber 420, the resist coating chamber 410, the first buffer 320 of the first buffer module 300, and the first cooling chamber 530 of the second buffer module 500. The guide rail 433 is provided so that the longitudinal direction thereof is parallel to the first direction 12. The guide rail 433 is provided so that the longitudinal direction thereof is parallel to the first direction 12. The coating robot 432 has a hand 434, an arm 435, a support 436, and a pillar 437. The hand 434 is fixedly installed in the arm 435. The arm 435 has a flexible structure so that the hand 434 is horizontally movable. The support 436 is provided so that the length direction thereof is arranged along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pillar 437, and the pillar 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

[0077] The resist coating chamber 410 has the same structure. However, the type of photoresist used in the resist coating chamber 410 can be different. As an example, the photoresist can be a chemically amplified photoresist. The resist coating chamber 410 applies the photoresist onto the substrate "W". The resist coating chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the substrate "W". The support plate 412 can be provided to be rotatable. The nozzle 413 supplies the photoresist onto the substrate "W" positioned on the support plate 412. The nozzle 413 has a round tube shape and can supply the photoresist to the center of the substrate "W". Optionally, the length of the nozzle 413 can correspond to the diameter of the substrate "W" and the discharge hole of the nozzle 413 can be a slit. In addition, further, a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate "W" onto which the photoresist is coated can be further provided in the resist coating chamber 410.

[0078] The baking chamber 420 heat-treats the wafer "W". For example, the baking chamber 420 performs a pre-baking process of removing organic substances and moisture on the surface of the wafer "W" by heating the wafer "W" at a predetermined temperature before the photoresist is coated or a soft-baking process performed after the photoresist is coated onto the wafer "W", and performs a cooling process of cooling the wafer "W" after the heating process. The baking chamber 420 has a cooling plate 421 and a heating plate 422. The cooling plate 421 is provided with a cooling unit 423 such as cooling water or a thermoelectric element. The heating plate 422 is provided with a heating unit 424 such as a heating wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 can be provided in one baking chamber 420. Optionally, some of the baking chambers 420 can include only the cooling plate 421 and some of the baking chambers 420 can include only the heating plate 422.

[0079] The developing module 402 includes a process of removing the photoresist by supplying a developing liquid to obtain a pattern on the substrate "W", and a heat treatment process such as heating and cooling performed on the substrate "W" before and after the developing process. The developing module 402 has a developing chamber 800, a baking chamber 470, and a transport chamber 480. The developing chamber 800, the baking chamber 470, and the transport chamber 480 are arranged in series in the second direction 14. Thus, the developing chamber 800 and the baking chamber 470 are spaced apart from each other in the second direction 14, and the transport chamber 480 is interposed therebetween. A plurality of developing chambers 800 can be provided, and a plurality of developing chambers 460 can be provided in each of the first direction 12 and the third direction 16. In the drawing, six developing chambers 800 are shown as an example. A plurality of baking chambers 470 can be provided in each of the first direction 12 and the third direction 16. In the drawing, six baking chambers 470 are shown as an example. However, unlike this, a larger number of baking chambers 470 can be provided.

[0080] The transport chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. A developing robot 482 and a guide rail 483 can be located in the transport chamber 480. The transport chamber 480 has a substantially rectangular shape. The developing robot 482 feeds the substrate "W" between the baking chamber 470, the developing chamber 800, the second buffer 330 of the first buffer module 300, and the cooling chamber 350 and the second cooling chamber 540 of the second buffer module 500. The guide rail 483 is provided so that the longitudinal direction thereof is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 so that the developing robot 482 moves linearly in the first direction 12. The developing robot 482 has a hand 484, an arm 485, a support 486, and a pillar 487. The hand 484 is fixedly installed in the arm 485. The arm 485 has a flexible structure so that the hand 484 is horizontally movable. The support 486 is provided so that the length direction thereof is arranged along the third direction 16. The arm 485 is coupled to the support 486 so as to be linearly movable along the support 486 in the third direction 16. The support 486 is fixedly coupled to the pillar 487. The pillar 487 is coupled to the guide rail 483 so as to be linearly movable along the guide rail 483.

[0081] The developing chamber 800 has the same structure. However, the type of the developing solution used in the developing chamber 800 can be different. The developing chamber 800 is provided as an apparatus for developing a substrate. The developing chamber 800 eliminates the regions of the photoresist on which light is irradiated on the substrate "W". Then, the regions of the protective film on which light is irradiated are eliminated together. Optionally, depending on the type of the photoresist used, only the regions of the photoresist and the protective film on which light is not irradiated can be eliminated. In an embodiment, the developing chamber 800 is provided as a substrate processing apparatus 800 for liquid processing of the substrate "W".

[0082] Figure 6 is a cross-sectional view of a substrate processing apparatus illustrating Figure 2 . Figure 7 is a plan view of a substrate processing apparatus illustrating Figure 6 . With reference to Figure 6 and Figure 7 , the substrate processing apparatus 800 includes a support unit 810, a processing container 820, a lifting unit 840, a liquid supply unit 850, and a controller 890.

[0083] The support unit 810 supports and rotates the substrate "W". The support unit 810 includes a support plate 813, a rotating shaft 814, and a driving member 815. Pin members 811 and 812 that support the substrate "W" are coupled to the upper surface of the support plate 813. Some of the pin members 811 support the bottom surface of the substrate "W", and the others 812 support the side surface of the substrate "W". The rotating shaft 814 is provided such that the length direction of the rotating shaft 814 has a cylindrical shape facing the upward / downward direction. The rotating shaft 814 is coupled to the bottom surface of the support plate 813. The driving member 815 provides a rotating force to the rotating shaft 814. The rotating shaft 814 can be rotated about its central axis by the driving member 815. The support plate 813 can be rotated together with the rotating shaft 814. The rotation speed of the rotating shaft 814 is adjusted by the driver 815, so that the rotation speed of the substrate "W" can be adjusted. For example, the driver 815 can be a motor.

[0084] The processing container 820 has a processing space within it, in which the development process is performed. The processing container 820 recovers the processing liquid used in the development process. The processing container 820 includes an internal recovery container 822 and a recovery line 830. The recovery container 822 includes a vertical wall 824, a bottom wall 826, and an inclined wall 828. The vertical wall 824 is arranged in a circular ring shape surrounding the support unit 810. The vertical wall 824 may have a diameter spaced apart from the support unit 810. The vertical wall 824 may be positioned so that its central axis coincides with the support unit 810. The bottom wall 826 extends from the lower end of the vertical wall 824. The bottom wall 826 faces a horizontal direction, which is oriented toward the central axis of the support unit 810. The inclined wall 828 extends from the upper end of the vertical wall 824. The inclined wall 828 faces an upwardly inclined direction as it gets closer to the central axis of the support unit 810. Optionally, the inclined wall 828 may face a horizontal direction.

[0085] The recovery line 830 discharges the treatment liquid recovered in the treatment space to the outside. The recovery line 830 is connected to the bottom wall 826. The discharged treatment liquid can be provided to an external regeneration system through the recovery line 830.

[0086] The lifting unit 840 adjusts the relative height between the container 820 and the support unit 810. The lifting unit 840 moves the container 820 upward and downward. The lifting unit 840 includes a bracket 842, a movable shaft 844, and a driver 846. The bracket 842 connects the processing container 820 and the movable shaft 844. The bracket 842 is fixedly mounted in the vertical wall 824 of the processing container 820. The movable shaft 844 is arranged so that its length faces the vertical direction. The upper end of the movable shaft 844 is fixedly coupled to the bracket 842. The movable shaft 844 can be vertically moved by the driver 846, and the processing space 820 can be raised and lowered together with the movable shaft 844. For example, the driver 846 can be an electric motor.

[0087] The first nozzle unit 870 discharges various liquids. Figure 8 It shows Figure 6 Perspective view of the nozzle unit. Figure 8 The first nozzle unit 870 includes a support body 872, a wetting nozzle 874, a pre-treatment nozzle 876, and a main nozzle 878. The support body 872 supports the wetting nozzle 874, the pre-treatment nozzle 876, and the main nozzle 878. The support body 872 is fixedly coupled to the bottom surface of one end of the support arm 864. The wetting nozzle 874, the pre-treatment nozzle 876, and the main nozzle 878 are fixedly coupled to the bottom surface of the support body 872.

[0088] The pre-treatment nozzle 876 discharges the treatment liquid in a flow pattern. The pre-treatment nozzle 876 is connected to a first treatment liquid supply line 876b. A first valve 876a is installed in the first treatment liquid supply line 876b to regulate whether the treatment liquid is supplied to the pre-treatment nozzle 876 or to regulate the amount of treatment liquid to be supplied. The pre-treatment nozzle 876 receives the treatment liquid from the first treatment liquid supply line 876b and discharges the treatment liquid. The pre-treatment nozzle 876 has a circular flow discharge hole. The flow discharge hole faces in a vertically downward direction. In an example, the pre-treatment nozzle 876 can be a flow nozzle. For example, the treatment liquid can be a developer.

[0089] The main nozzle 878 discharges the treatment liquid in a liquid curtain pattern. The main nozzle 878 is located on a side of the pre-treatment nozzle 876. The main nozzle 878 is positioned to face the pre-treatment nozzle 876. The main nozzle 878 is connected to a second treatment liquid supply line 878b. A second valve 878a regulates whether the treatment liquid is supplied to the main nozzle 878 or to regulate the amount of treatment liquid to be supplied. In an example, the second treatment liquid supply line 878b can be provided as a line branched from the first treatment liquid supply line 876b. The main nozzle 878 receives the treatment liquid from the second treatment liquid supply line 878b and discharges the treatment liquid. The main nozzle 878 has a slit discharge hole of a slit shape. The slit discharge hole has a length direction parallel to the guide rail 862. The slit discharge hole can have a direction facing the first direction 12. The slit discharge hole is inclined downward in a direction facing the pre-treatment nozzle 876 from the main nozzle 878. The slit discharge hole is provided to have a length smaller than a radius of the substrate “W”. The end of the slit discharge hole is positioned higher than the end of the flow discharge hole. According to an embodiment, the main nozzle 878 and the pre-treatment nozzle 876 can be provided along the second direction 14. The main nozzle 878 can have a downwardly inclined slit discharge hole so that the treatment liquid is discharged to the same point of the pre-treatment nozzle 876. In an example, the main nozzle 878 can be provided as a slit nozzle.

[0090] The wetting nozzle 874 discharges the wetting liquid in a flow pattern. The wetting nozzle 874 is positioned adjacent to the pre-treatment nozzle 876 and the main nozzle 878. The wetting nozzle 874 is provided relative to the pre-treatment nozzle 876 along the first direction 12. A wetting liquid supply line 874b having a wetting liquid valve 874a installed therein is connected to the wetting nozzle 874. The wetting nozzle 874 receives the wetting liquid from the wetting liquid supply line 874b and discharges the wetting liquid. The wetting nozzle 874 has a circular discharge hole. The discharge hole of the wetting nozzle 874 faces in a vertically downward direction. As an example, the wetting liquid can be pure water.

[0091] The second nozzle unit 880 includes a rinsing liquid nozzle 875, a rotating shaft 861, and a rinsing arm 863. The second nozzle unit 880 supplies a rinsing liquid onto the substrate "W". In an example, the rinsing liquid nozzle 875 supplies the rinsing liquid in a droplet mode. The rinsing liquid can be supplied in a circulating flow. The rotating shaft 861 and the rinsing arm 863 are provided to a nozzle driver that moves the rinsing liquid nozzle 875. In an example, the rotating shaft is located on the opposite side of the processing container 820. The rotating shaft is positioned not to overlap with a path in which the first nozzle unit 870 moves. The rotating shaft 861 can be rotated around a central axis thereof by a driver (not shown). The rinsing arm 863 has a bar shape that extends longer in a direction perpendicular to the rotating shaft 861 from an upper end of the rotating shaft 861. The rinsing liquid nozzle 875 is installed at an end portion of the rinsing arm 863. The rinsing liquid nozzle 875 is moved to a processing position and a standby position by the rinsing arm 863 and the rotating shaft 861. Here, the processing position is a position in which the rinsing liquid nozzle 875 faces the substrate "W" supported by the support unit 810, and the standby position is a position that is deviated from a position of the rinsing liquid nozzle 875 corresponding to the support unit 810. The rinsing liquid nozzle 875 receives the rinsing liquid from a rinsing liquid supply line 875b and discharges the rinsing liquid. A third valve 875a is installed in the rinsing liquid supply line 875b to regulate whether the rinsing liquid is supplied to the rinsing liquid nozzle 875 or regulate an amount of the rinsing liquid to be supplied. The rinsing liquid can be a liquid that can rinse the developing liquid. As an example, the rinsing liquid can be pure water.

[0092] The controller 890 controls the driving member 815, the wetting liquid valve 876a, the first valve 878a, the second valve 874a, and the third valve 875a. The controller 890 independently controls the valves so that the wetting liquid, the processing liquid, and the rinsing liquid are sequentially supplied onto the substrate "W". Further, the controller 890 controls the driving member 814 so that a rotation speed of the substrate "W" is varied depending on a kind of liquid supplied onto the substrate "W".

[0093] Next, a method of liquid processing of a substrate by using the above-described substrate processing apparatus 800 will be described. Figure 9 is a flowchart illustrating a process of processing a substrate by using a substrate processing apparatus of the present inventive concept. Figures 10 to 14 is a view sequentially illustrating a substrate processing method of the present inventive concept.

[0094] Reference Figure 9 The method for liquid processing of a substrate includes a pre-wetting operation S10, a pre-processing operation S20, a main processing operation S30, an agitation operation S40, and a rinsing liquid supply operation S50. The pre-wetting operation S10, the pre-processing operation S20, the main processing operation S30, the agitation operation S40, and the rinsing liquid supply operation S50 are sequentially performed.

[0095] Reference Figure 10When the substrate "W" is loaded on the support unit 810, the first nozzle unit 870 moves from a standby position to a processing position. Here, the standby position is a position not corresponding to the substrate "W" supported by the support unit 810, and the processing position is a position corresponding to the substrate "W" supported by the support unit 810. When the pre-wetting operation S10 is performed, the wetting nozzle 874 discharges the wetting liquid to the upper surface of the rotating substrate "W". In an example, the wetting nozzle 874 discharges the wetting liquid to the central region of the substrate "W". The discharged wetting liquid forms a wetting liquid film at the central region of the upper surface of the substrate "W". Although it has been described that the wetting liquid film is formed at the central region of the substrate "W" in the present embodiment, it can be formed in the entire region of the substrate "W". Thus, the substrate "W" is converted to a wet state by the wetting liquid. When the pre-wetting operation S10 is completed, the pre-processing operation S20 is performed.

[0096] The wetting liquid supply operation can be performed for a period of time tl, the pre-processing operation S20 can be performed for a period of time t2, the main processing operation S30 can be performed for a period of time t3, the agitation operation S40 can be performed for a period of time t4, and the rinse liquid supply operation S50 can be performed for a period of time t5. In an example, t5 can be a period of time longer than tl to t4. In an example, t3 can be a period of time longer than t2. For example, tl can be 2 to 6 seconds, t2 can be 10 to 25 seconds, t3 can be 20 to 40 seconds, t4 can be 0 to 6 seconds, and t5 can be 25 to 50 seconds.

[0097] Reference Figure 11 When the pre-processing operation S20 is performed, the pre-processing nozzle 876 discharges the processing liquid to the central region of the substrate "W" on which the wetting liquid film is formed. In an example, the pre-processing nozzle 876 discharges the processing liquid in a flow pattern. The pre-processing nozzle 876 discharges the processing liquid in a vertically downward direction. The discharged processing liquid mixes with the wetting liquid film and spreads to the entire region of the substrate "W". A liquid film of the processing liquid having a first thickness is formed in the entire region of the upper surface of the substrate "W". In an embodiment, when the pre-processing operation S20 is performed, the substrate "W" rotates at a first speed VI. In an example, in the pre-processing operation S20, the processing liquid is supplied at a flow rate of Ql per unit time. In an embodiment, Ql can be 100 to 300 cc per second.

[0098] Thereafter, the pre-processing operation S20 is completed, and the main processing operation S30 is performed. Reference Figure 12, the pre-treatment nozzle 876 stops discharging the treatment liquid. In an embodiment, in the pre-treatment operation S20, the substrate "W" is rotated at a second speed. The main nozzle 878 supplies the treatment liquid to the central area of ​​the upper surface of the substrate "W". In the example, the main nozzle 878 discharges the treatment liquid in a liquid curtain mode. In the example, the main nozzle 878 discharges the second treatment liquid in a downwardly inclined direction. A liquid film of the treatment liquid having a second thickness greater than the first thickness is formed over the entire area of ​​the upper surface of the substrate "W".

[0099] When the main nozzle 878 discharges the treatment liquid, the substrate "W" rotates in a direction opposite to the direction of rotation of the substrate "W" when the pre-treatment nozzle 876 discharges the treatment liquid. In this example, when the main treatment operation S30 is performed, the substrate "W" rotates at a second speed V1. Figure 15 , the second speed V2 is lower than the first speed V1.

[0100] In the example, in the main processing operation S30, the processing liquid is supplied at a flow rate of Q2 per unit time. In the example, in the main processing operation S30, the main nozzle 878 discharges the processing liquid while changing the reference point to the center area of ​​the substrate "W" and the edge area of ​​the substrate "W". For example, Q2 is greater than Q1. In an embodiment, Q2 can be 200cc to 500cc per second. In the example, when the viscosity of the processing liquid is low, Q1 and Q2 can be smaller than when the viscosity of the processing liquid is high.

[0101] In the example, in the main processing operation S30, the moving speed of the main nozzle 878 may be changed. For example, among all regions of the substrate "W", the moving speed of the main nozzle 878 may be lower in a region where the aspect ratio of the pattern formed on the substrate "W" is high.

[0102] When the main processing operation S30 is completed, the stirring operation S40 is performed. Figure 13 In the stirring operation S40, the substrate "W" is rotated at a speed V0. In this example, V0 may be a speed of 0 or close to 0. When the stirring operation S40 is performed, the photosensitive film and the processing liquid on the substrate "W" can fully react with each other. In addition, when the thickness of the processing liquid film in the central and middle regions of the substrate "W" is less than the thickness of the processing liquid film in the edge regions thereof, the stirring operation S40 prevents the central and middle regions of the substrate "W" from being underdeveloped compared to the edge regions.

[0103] When the stirring operation S40 is completed, the rinsing liquid supplying operation S50 is performed. Figure 14 When the rinsing liquid supplying operation S50 is performed, the rinsing liquid nozzle discharges the rinsing liquid to the upper surface of the rotating substrate "W". In this example, the rinsing liquid nozzle supplies the rinsing liquid to the central area of ​​the substrate "W". Figure 15In the rinse liquid supply operation S50, the substrate "W" is rotated at a third speed V3. In an example, the third speed V3 is lower than the first speed VI and higher than the second speed V2. In an example, the third speed V3 is a speed at which the rinse liquid does not splash on the substrate "W".

[0104] Reference Figure 15 In an example, in the stirring operation S40 and the rinse liquid supply operation S50, the rotation direction of the substrate "W" is the same as in the main processing operation S30.

[0105] In the above example, it has been described that the substrate "W" is rotated at the speed VI in the pretreatment operation S20, at the speed V2 in the main processing operation S30, and at the speed V3 in the rinse liquid supply operation S50. However, unlike this, as shown in Figure 16 the rotation speed of the substrate "W" can be changed in the pretreatment operation S20, the main processing operation S30, and the rinse liquid supply operation S50.

[0106] In an example, the pretreatment operation S20 can include an initial pretreatment operation, an intermediate pretreatment operation, and a late pretreatment operation. In the initial pretreatment operation, the substrate "W" is rotated at an initial pretreatment speed VI 1. In the intermediate pretreatment operation, the substrate "W" is rotated at an intermediate pretreatment speed V13. In the late pretreatment operation, the substrate "W" is rotated at a late pretreatment speed V12. In an example, the late pretreatment speed V12 is higher than the initial pretreatment speed VI 1, and the intermediate pretreatment speed V13 is lower than the initial pretreatment speed VI 1.

[0107] In an example, the main processing operation S30 can include an initial main processing operation, an intermediate main processing operation, and a late main processing operation. In the initial main processing operation, the substrate "W" is rotated at an initial main processing speed V21. In the intermediate main processing operation, the substrate "W" is rotated at an intermediate main processing speed V23. In the late main processing operation, the substrate "W" is rotated at a late main processing speed V22. In an example, the intermediate main processing speed V23 is lower than the initial main processing speed V21 and the late main processing speed V22. In an example, the initial main processing speed V21 and the late main processing speed V22 are the same. In an example, the initial main processing speed V21 and the late main processing speed V22 can be lower than the intermediate main processing speed V23. Thus, the rotation speed of the substrate "W" in the main processing operation S30 does not exceed the rotation speed of the substrate "W" in the pretreatment operation S20.

[0108] In the example, the rinse liquid supply operation S50 includes a first rotation operation and a second rotation operation. In the example, the first rotation operation and the second rotation operation are repeatedly performed sequentially. In the first rotation operation, the substrate "W" is rotated at a first rotation speed V31. In the second rotation operation, the substrate "W" is rotated at a second rotation speed V32 lower than the first rotation speed V31. In the embodiment, the first rotation speed V31 is lower than the speed V13 of the intermediate pretreatment, and the second rotation speed V32 is higher than the speed V21 of the initial main treatment. Thus, the rotation speed of the substrate "W" in the rinse liquid supply operation S50 is lower than the rotation speed of the substrate "W" in the pretreatment operation S20, and is higher than the rotation speed of the substrate "W" in the main treatment operation S30.

[0109] In the example described above, the rotation speed of the substrate "W" has been described as being changed in the pretreatment operation S20, the main treatment operation S30, and the rinse liquid supply operation S50. However, unlike this, the rotation speed of the substrate "W" can be changed in any one or more of the pretreatment operation S20, the main treatment operation S30, and the rinse liquid supply operation S50.

[0110] In the example described above, it has been described that, in the main treatment operation S30, the main nozzle 878 discharges the treatment liquid while changing the reference point to the center region of the substrate "W" and the edge region of the substrate "W". However, unlike this, as shown in Figure 17 the main nozzle 878 can discharge the treatment liquid while changing the reference point to the center region of the substrate "W" and the edge region of the substrate "W" a plurality of times.

[0111] In the example described above, it has been described that the stirring operation S40 is performed. However, unlike this, as shown in Figure 18 the rinse liquid supply operation S50 can be performed immediately after the main treatment operation S30. Specifically, when the viscosity of the treatment liquid is low, the stirring operation S40 can be omitted.

[0112] In the example described above, it has been described that, in the stirring operation S40 and the rinse liquid supply operation S50, the rotation direction of the substrate "W" is the same as in the main treatment operation S30. However, unlike this, in the main treatment operation S30, the stirring operation S40, and the rinse liquid supply operation S50, the rotation direction of the substrate "W" can be opposite to each other.

[0113] In the example described above, it has been described that the pretreatment nozzle 876 and the main nozzle 878 are supported by the same arm. Thus, the phenomenon that the treatment liquid dries during the movement of the nozzle. However, unlike this, the pretreatment nozzle 876 and the main nozzle 878 can be supported by separate arms. Then, in order to prevent the phenomenon that the treatment liquid dries during the movement of the nozzle, the main nozzle 878 starts to discharge the treatment liquid immediately after the treatment is discharged by the pretreatment nozzle 876 without any delay.

[0114] According to an embodiment of the present inventive concept, the pre-treatment operation S20 is performed before the main treatment operation S30 is performed. In the pre-treatment operation S20, the treatment liquid is supplied onto the substrate "W" in a flow mode, and a treatment liquid film is formed. Accordingly, in the main treatment operation S30, the generation of stains can be minimized while the treatment liquid is supplied in a liquid curtain mode.

[0115] Further, according to an embodiment of the present inventive concept, after the substrate "W" is liquid treated in a flow mode of the pre-treatment nozzle 876, the substrate "W" is liquid treated in a liquid curtain mode of the main nozzle 878. Accordingly, the disadvantages that occur when liquid treatment is performed using the pre-treatment nozzle 876 and the main nozzle 878 can be compensated for each other.

[0116] Further, according to an embodiment of the present inventive concept, the substrate "W" is liquid treated in a liquid curtain mode on the substrate "W" on which a liquid film is formed. Accordingly, a greater amount of treatment liquid than in the pre-treatment operation S20 is supplied onto the substrate "W", and thus the period of time taken in the liquid treatment operation of the substrate "W" can be shortened.

[0117] According to an embodiment of the present inventive concept, in the pre-treatment operation S20, the substrate "W" is rotated at an initial pre-treatment speed, the rotation speed of the substrate "W" is lowered to a later pre-treatment speed, and then the substrate "W" is again rotated at an intermediate pre-treatment high speed, and thus a treatment liquid film is uniformly formed on the substrate "W".

[0118] According to an embodiment of the present inventive concept, in the main treatment operation S30, the rotation direction of the substrate "W" is opposite to the rotation direction in the pre-treatment operation S20. Accordingly, the photosensitive film is peeled off without orientation, and thus there is no difference in inclination in the pattern on the substrate "W".

[0119] According to an embodiment of the present inventive concept, in the main treatment operation S30, the rotation direction of the substrate "W" in the main treatment operation S30 is lower than the rotation direction in the pre-treatment operation S20. Accordingly, the treatment liquid is uniformly spread on the substrate "W", and the photosensitive film is peeled off without orientation, and thus there is no difference in inclination in the pattern on the substrate "W".

[0120] According to an embodiment of the present inventive concept, in the main treatment operation S30, the reference point of the main nozzle 878 is changed, and the moving speed of the main nozzle 878 can be adjusted. Accordingly, by providing a low speed in a region in which a pattern is dense or a region in which the aspect ratio of a pattern is high, a reaction time of the developer and the pattern is given. Accordingly, the entire region of the substrate "W" can be developed uniformly.

[0121] According to an embodiment of the present inventive concept, in the rinse liquid supply operation S50, the rotation speed of the substrate "W" is changed. Accordingly, the centrifugal force becomes different due to the acceleration and deceleration of the rotation speed. Accordingly, it is possible to solve the problem of non-uniform rinsing due to the generation of inertial force in the liquid film of the substrate "W" when the rotation speed is the same in the conventional rinse liquid supply operation S50.

[0122] Referring again to Figures 1 to 4 The bake chamber 470 of the developing module 402 heats the substrate "W". For example, the bake chamber 470 can perform a post-bake process of heating the substrate "W" before the developing process, a hard-bake process of heating the substrate "W" after the developing process, and a cooling process of cooling the heated substrate "W" after the bake process. The bake chamber 470 has a cooling plate 471 and a heating plate 472. The cooling plate 471 is provided with a cooling unit 473 such as cooling water or a thermoelectric element. The heating plate 472 is provided with a heating unit 474 such as a heating wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 can be provided in one bake chamber 470. Optionally, some bake chambers 470 can include only the cooling plate 471, and some bake chambers 472 can include only the heating plate 472.

[0123] As described above, the coating / developing module 400 is provided such that the coating module 401 and the developing module 402 are separated. When viewed from the top, the coating module 401 and the developing module 402 can have the same chamber arrangement.

[0124] The second buffer module 500 is provided as a passage through which the substrate "W" is transported between the coating / developing module 400 and the pre / post exposure module 600. The second buffer module 500 performs a process such as a cooling process or an edge exposure process on the substrate "W". The second buffer module 500 has a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560. The frame 510 has a cuboid shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located in the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the coating module 401. The second cooling chamber 540 is disposed at a height corresponding to the developing module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are disposed in a row in the third direction 16. When viewed from the top, the buffer 520 is disposed along the transport chamber 430 of the coating module 401 in the first direction 12. The edge exposure chamber 550 is spaced apart from the buffer 520 or the first cooling chamber 530 by a predetermined distance in the second direction 14.

[0125] The second buffer robot 560 transports the substrate "W" between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. The second buffer robot 560 is located between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 can have a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the substrate "W" on which the process has been performed by the coating module 401. The first cooling chamber 530 cools the substrate "W" on which the process has been performed by the coating module 401. The first cooling chamber 530 has a structure similar to that of the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes the periphery of the substrate "W" on which the cooling process has been performed by the first cooling chamber 530. The buffer 520 temporarily stores the substrate "W" on which the process has been performed by the edge exposure chamber 550 before being transported to the pre-treatment module 601 to be described below. The second cooling chamber 540 cools the substrate "W" on which the process has been performed by the post-treatment module 602 to be described below before being transported to the developing module 402. The second buffer module 500 can also have a buffer at a height corresponding to the developing module 402. In this case, the substrate "W" on which the process has been performed by the post-treatment module 602 can be transported to the developing module 402 after being temporarily stored in the added buffer.

[0126] When the exposure apparatus 900 performs the immersion / exposure process, the pre / post exposure module 600 can perform a process of coating a protective film that protects the photoresist film coated to the substrate "W" during the immersion / exposure process. The pre / post exposure module 600 can perform a process of cleaning the substrate "W" after the exposure process. Furthermore, when the coating process is performed by using a chemical amplification resist, the pre / post exposure module 600 can perform a baking process after the exposure process.

[0127] The pre / post exposure module 600 has a pre-treatment module 601 and a post-treatment module 602. The pre-treatment module 601 performs a process of treating the substrate "W" before the exposure process, and the post-treatment module 602 performs a process of treating the substrate "W" after the exposure process. The pre-treatment module 601 and the post-treatment module 602 can be disposed to be separated from each other in different tiers. According to an example, the pre-treatment module 601 is located on the post-treatment module 602. The height of the pre-treatment module 601 is the same as the height of the coating module 401. The height of the post-treatment module 602 is the same as the height of the developing module 402. The pre-treatment module 601 has a protective film coating chamber 610, a baking chamber 620, and a transport chamber 630. The protective film coating chamber 610, the transport chamber 630, and the baking chamber 620 are disposed in sequence along the second direction 14. Thus, the protective film coating chamber 610 and the baking chamber 620 are spaced apart from each other in the second direction 14 with the transport chamber 630 interposed therebetween. A plurality of protective film coating chambers 610 is provided, and the plurality of protective film coating chambers 610 is disposed in the third direction 16 to form different tiers. Optionally, a plurality of protective film coating chambers 610 can be provided in each of the first direction 12 and the third direction 16. A plurality of baking chambers 620 is provided, and the plurality of baking chambers 610 is disposed in the third direction 16 to form different tiers. Optionally, a plurality of baking chambers 620 can be provided in each of the first direction 12 and the third direction 16.

[0128] The transport chamber 630 is located in parallel with the first cooling chamber 530 of the second buffer module 500 in the first direction 12. A pre-treatment robot 632 is located in the transport chamber 630. The transport chamber 630 has a substantially square or rectangular shape. The pre-treatment robot 632 feeds the substrate "W" between the protective film coating chamber 610, the baking chamber 620, the buffer 520 of the second buffer module 500, and the first buffer 720 of the interface module 700, which will be described below. The pre-treatment robot 632 has a hand 633, an arm 634, and a support rod 635. The hand 633 is fixedly mounted in the arm 634. The arm 634 has a flexible and rotatable structure. The arm 634 is coupled to the support 635 to be linearly movable in the third direction 16 along the support 635.

[0129] A protective film coating chamber 610 coats a protective film onto the substrate "W", which protects the resist film during the immersion / exposure process. The protective film coating chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with an open top. The support plate 612 is located in the housing 611 and supports the substrate "W". The support plate 612 can be provided to be rotatable. The nozzle 613 supplies a protective liquid for forming the protective film onto the substrate "W" positioned on the support plate 612. The nozzle 613 has a circular tube shape and can supply the protective liquid to the center of the substrate "W". Optionally, the length of the nozzle 613 can correspond to the diameter of the substrate "W", and the discharge hole of the nozzle 613 can be a slit. In this case, the support plate 612 can be provided in a fixed state. The protective liquid includes an expandable material. The protective liquid can be a material having a low affinity for photoresist and water. For example, the protective liquid can include a fluorine-based solvent. The protective film coating chamber 610 supplies the protective liquid to the central region of the substrate "W" while rotating the substrate "W" positioned on the support plate 612.

[0130] A baking chamber 620 heat-treats the substrate "W" onto which the protective film is coated. The baking chamber 620 has a cooling plate 621 and a heating plate 622. The cooling plate 621 is provided with a cooling unit 623 such as cooling water or a thermoelectric element. The heating plate 622 is provided with a heating unit 624 such as a heating wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 can be provided in one baking chamber 620. Optionally, some of the baking chambers 620 can include only the heating plate 622, and some of the baking chambers 620 can include only the cooling plate 621.

[0131] The post-processing module 602 has a cleaning chamber 660, a post-exposure baking chamber 670, and a transport chamber 680. The cleaning chamber 660, the transport chamber 680, and the post-exposure chamber 670 are sequentially provided in the second direction 14. Therefore, the cleaning chamber 660 and the post-exposure baking chamber 670 are spaced apart from each other in the second direction 14 with the transport chamber 680 interposed therebetween. A plurality of cleaning chambers 660 is provided, and the plurality of cleaning chambers 610 is provided in the third direction 16 to form different layers. Optionally, a plurality of cleaning chambers 660 can be provided in each of the first direction 12 and the third direction 16. A plurality of post-exposure baking chambers 670 is provided, and the plurality of post-exposure baking chambers 670 is provided in the third direction 16 to form different layers. Optionally, a plurality of post-exposure baking chambers 670 can be provided in each of the first direction 12 and the third direction 16.

[0132] The transport chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 when viewed from the top. The transport chamber 680 has a substantially square or rectangular shape. A post-processing robot 682 is positioned in the transport chamber 680. The post-processing robot 682 transports the substrate "W" between the cleaning chamber 660, the post-exposure bake chamber 670, the second cooling chamber 540 of the second buffer module 500, and the second buffer 730 of the interface module 700, which will be described below. The post-processing robot 682 provided in the post-processing module 602 can have the same structure as that of the pre-processing robot 632 provided in the pre-processing module 601.

[0133] The cleaning chamber 660 cleans the substrate "W" after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is positioned in the housing 661 and supports the substrate "W". The support plate 662 can be provided to be rotatable. The nozzle 663 supplies a cleaning liquid onto the substrate "W" positioned on the support plate 662. The cleaning liquid can be water, such as deionized water. The cleaning chamber 660 supplies the cleaning liquid to a central region of the substrate "W" while rotating the substrate "W" positioned on the support plate 662. Optionally, the nozzle 663 can be linearly moved or rotated to a peripheral region from the central region of the substrate "W" while the substrate "W" is rotated.

[0134] The bake chamber 670 heats the substrate "W" on which the exposure process has been performed by using far infrared rays after the exposure process. After the exposure process, in a bake process, the substrate "W" is heated to complete a performance change of a photoresist by enhancing an acid generated in the photoresist by the exposure process. The bake chamber 670 has a heating plate 672 after the exposure process. The heating plate 672 is provided with a heating unit 674, such as a heating wire or a thermoelectric element. The bake chamber 670 can be further provided with a cooling plate 671 in its interior after the exposure process. The cooling plate 671 is provided with a cooling unit 673, such as cooling water or a thermoelectric element. Optionally, a bake chamber having only the cooling plate 671 can be further provided.

[0135] As described above, the pre / post-exposure module 600 is provided such that the pre-processing module 601 and the post-processing module 602 are completely separated from each other. The transport chamber 630 of the pre-processing module 601 and the transport chamber 680 of the post-processing module 602 can have the same size and can completely overlap each other when viewed from the top. The protective film coating chamber 610 and the cleaning chamber 660 can have the same size and can completely overlap each other when viewed from the top. The bake chamber 620 and the post-exposure chamber 670 can have the same size and can completely overlap each other when viewed from the top.

[0136] The interface module 700 feeds the substrate "W" between the pre / post exposure module 600 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance, and can be stacked. The first buffer 720 is disposed at a position higher than the second buffer 730. The first buffer 720 is located at a height corresponding to the pre-processing module 601, and the second buffer 730 is disposed at a height corresponding to the post-processing module 602. When viewed from the top, the first buffer 720 is disposed in the first direction 12 while forming a line with the transport chambers 630 of the pre-processing module 601, and the second buffer 730 is disposed in the first direction 12 while forming a line with the transport chambers 630 of the post-processing module 602.

[0137] The interface robot 740 is positioned spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 transports the substrate "W" between the first buffer 720, the second buffer 730, and the exposure apparatus 900. The structure of the interface robot 740 is substantially similar to that of the second buffer robot 560.

[0138] The first buffer 720 temporarily holds the substrate "W" on which the pre-processing module 601 has performed a process, before the substrate "W" is moved to the exposure apparatus 900. The second buffer 730 temporarily holds the substrate "W" on which the exposure apparatus 900 has completely performed a process, before the substrate "W" is moved to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and spaced apart from each other in the third direction 16. One substrate "W" is positioned on each of the supports 722. The housing 721 has an opening (not shown) on a side on which the interface robot 740 is disposed and on a side on which the pre-processing robot 721 is disposed, so that the interface robot 740 and the pre-processing robot 632 bring or take out the substrate "W" to or from the cooling plate 722. The structure of the second buffer 730 is substantially similar to that of the first buffer 720. Meanwhile, the housing 731 of the second buffer 730 has an opening on a side on which the interface robot 740 is disposed and on a side on which the post-processing robot 682 is disposed. The interface module can be provided only with the buffers and the robots as described above, without being provided with the chambers that perform specific processes on the substrate "W".

[0139] According to embodiments of the present inventive concept, the efficiency of a liquid treatment process of a substrate can be improved.

[0140] According to embodiments of the present inventive concept, disadvantages that occur when a substrate is liquid-treated by using a flow nozzle and a slit nozzle, respectively, can be compensated for.

[0141] According to embodiments of the present inventive concept, a phenomenon in which the slope of a pattern becomes different when a substrate is liquid-treated can be prevented.

[0142] Effects of the present inventive concept are not limited to what has been described above, and those skilled in the art to which the present inventive concept pertains can understand other effects from the description and the accompanying drawings.

Claims

1. A substrate processing device comprising: a supporting unit configured to support a substrate; a liquid supply unit configured to supply liquid onto the substrate supported by the supporting unit; as well as a controller configured to control the liquid supply unit and the supporting unit, Wherein the liquid supply unit comprises: a pretreatment nozzle configured to discharge a first treatment fluid in a stream pattern; as well as a main nozzle configured to discharge the second processing liquid in a liquid curtain pattern, and The controller controls the supporting unit so that a rotation direction of the substrate when the first treatment liquid is discharged from the pre-treatment nozzle and a rotation direction of the substrate when the second treatment liquid is discharged from the main nozzle are opposite to each other. 2 . The substrate processing apparatus according to claim 1 , wherein the controller controls the liquid supply unit so that the pre-processing nozzle discharges the first processing liquid onto the substrate at a position corresponding to a center area of ​​the substrate.

3. The substrate processing apparatus according to claim 1 , wherein the liquid supply unit further comprises: a support body, on which the main nozzle is mounted; a support arm connected to the support body so as to be movable; as well as a driver configured to move the support arm, and The controller controls the driver so that the second processing liquid is discharged onto the substrate while a reference point of the main nozzle is changed from a central area of ​​the substrate to an edge area of ​​the substrate.

4. The substrate processing apparatus according to claim 3, wherein the controller controls the driver so that a moving speed of the main nozzle changes while the reference point of the main nozzle changes from the central area of ​​the substrate to the edge area of ​​the substrate. 5 . The substrate processing apparatus according to claim 4 , wherein the controller controls the driver so that: among all regions of the substrate, in a region where an aspect ratio of a pattern formed on the substrate is high, the moving speed of the main nozzle is low.

6. A substrate processing device according to claim 1, wherein the controller controls the supporting unit so that: when the pre-treatment nozzle discharges the first treatment liquid onto the substrate, the substrate rotates at a first speed, when the main nozzle discharges the second treatment liquid onto the substrate, the substrate rotates at a second speed, and the first speed is higher than the second speed.

7. The substrate processing apparatus according to claim 6, wherein the liquid supply unit further comprises: a first treatment liquid supply line, a first valve installed in the first treatment liquid supply line and configured to supply the first treatment liquid to the pretreatment nozzle; as well as a second treatment liquid supply line, a second valve installed in the second treatment liquid supply line and configured to supply the second treatment liquid to the main nozzle, and The controller controls the first valve and the second valve so that the pre-treatment nozzle discharges the first treatment liquid and then the main nozzle discharges the second treatment liquid.

8. The substrate processing apparatus according to claim 7, wherein the liquid supply unit further comprises: a rinsing liquid nozzle configured to supply a rinsing liquid onto the substrate; as well as a flushing liquid supply line in which a third valve is installed and configured to supply the flushing liquid to the flushing liquid nozzle, and The controller controls the supporting unit so that the substrate rotates at a third speed when the rinsing liquid nozzle discharges the rinsing liquid onto the substrate, and the second speed is lower than the first speed and the third speed. 9 . The substrate processing apparatus according to claim 8 , wherein the controller controls the third valve so that the main nozzle discharges the second processing liquid onto the substrate, and then the rinsing liquid nozzle discharges the rinsing liquid.

10. The substrate processing apparatus according to any one of claims 1 to 9, wherein the pre-processing nozzle discharges the first processing liquid in a vertically downward direction, and The main nozzle discharges the second treatment liquid in a downwardly inclined direction. 11 . The substrate processing apparatus according to claim 10 , wherein the first processing liquid and the second processing liquid are the same liquid. 12 . The substrate processing apparatus according to claim 11 , wherein the first processing liquid and the second processing liquid include a developing liquid.

13. A substrate processing device comprising: a supporting unit configured to support a substrate; a liquid supply unit configured to discharge a processing liquid onto the substrate supported by the supporting unit; as well as a controller configured to control the liquid supply unit and the supporting unit, Wherein the liquid supply unit comprises: a pretreatment nozzle having a stream discharge hole and configured to discharge the treatment liquid in a stream pattern; as well as a main nozzle having a slit discharge hole and configured to discharge the treatment liquid in a liquid curtain pattern, wherein the flow discharge hole has a circular shape, and the slit discharge hole has a slit shape, and The controller controls the supporting unit so that a rotation direction of the substrate when the treatment liquid is discharged from the main nozzle and a rotation direction of the substrate when the treatment liquid is discharged from the pre-treatment nozzle are opposite to each other.

14. The substrate processing apparatus according to claim 13, wherein the liquid supply unit further comprises: A support body is provided, on which the pretreatment nozzle and the main nozzle are mounted.

15. The substrate processing apparatus according to claim 13, wherein the slit discharge hole has a length direction facing the first direction, and When viewed from the top, the main nozzle and the pre-treatment nozzle are arranged along a second direction perpendicular to the first direction. 16 . The substrate treating apparatus of claim 15 , wherein a length of the slit discharge hole is smaller than a radius of the substrate supported by the supporting unit. 17 . The substrate treating apparatus of claim 15 , wherein the slit discharge hole is inclined downward in a direction facing the pre-treatment nozzle. 18 . The substrate treating apparatus of claim 15 , wherein an end portion of the slit discharge hole is positioned higher than an end portion of the flow discharge hole.

19. The substrate processing apparatus according to claim 13, wherein the liquid supply unit further comprises: a rinsing liquid nozzle configured to discharge a rinsing liquid onto the substrate; as well as A nozzle body is provided on which the flushing liquid nozzle is mounted.

20. The substrate processing apparatus according to claim 19, wherein the controller controls the liquid supply unit so that: after the pre-processing nozzle supplies the processing liquid onto the substrate, the main nozzle supplies the processing liquid onto the substrate, and thereafter the rinsing liquid nozzle supplies the rinsing liquid onto the substrate.

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