Display substrate and manufacturing method thereof, and display device
CN113972236BActive Publication Date: 2024-12-10HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
Patent Information
- Application Number
- CN202010719363.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-07-23
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2040-07-23
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Figure CN113972236B_ABST
Abstract
The exemplary embodiments of the present disclosure provide a display substrate and a method for preparing the same, and a display device. The display substrate includes a first conductive layer, a first metal layer, a metal oxide layer, and a second metal layer stacked on a substrate, the metal oxide layer includes a first active layer, the first active layer includes a channel region, a source transition region, and a drain transition region, the source transition region and the drain transition region both include a first region and a second region, the conductivity of the first active layer corresponding to the first region is higher than the conductivity of the first active layer corresponding to the second region, or the oxygen content of the first active layer corresponding to the first region is less than the oxygen content of the first active layer corresponding to the second region, or the thickness of the first active layer corresponding to the first region is less than the thickness of the first active layer corresponding to the second region. The exemplary embodiments of the present disclosure reduce the number of patterning processes, improve the alignment accuracy of the gate electrode and the channel region, and improve the electrical characteristics of the thin film transistor.
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Citation Information
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