A FAPbI based on electrodeposition technology 3 Solar cell and rapid preparation method thereof

Abstract

The present invention discloses a FAPbI3 solar cell based on electrodeposition technology and a rapid preparation method thereof. It uses SnO2 as the electron transport layer, provides a lead source through electrodeposited lead dioxide (PbO2), spin-coats a FAI film on the surface of PbO2, and through rapid annealing, enables FAI to fully react with PbO2 to obtain a FAPbI3 film. Then, a hole transport layer is prepared on the perovskite layer, and a metal electrode is deposited on the hole transport layer to obtain a perovskite FAPbI3 solar cell. The preparation method of the present invention saves time, has low cost, simple process, and good repeatability, and can be applied to the preparation of large-area and high-efficiency perovskite solar cells.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a FAPbI based on an electrodeposition technology. 3 Solar cell and rapid preparation method thereof. Background Art

[0002] Compared with the earlier MAPbI 3 Perovskite, Formamidinium-based Perovskite FAPbI 3 With a narrower band gap and good thermal stability, the formamidinium-based perovskite FAPbI 3 Solar cells continue to set new records for the photoelectric conversion efficiency of perovskite solar cells. 3 The preparation of solar cells mainly adopts spin coating and evaporation. Among them, spin coating is not conducive to the large-scale preparation of perovskite solar cells, and evaporation requires high vacuum and high temperature conditions, so the cost is relatively high. Moreover, the preparation of perovskite films usually takes half an hour or even longer, which is not conducive to the commercial application and development of perovskite solar cells. Therefore, the development of a perovskite solar cell preparation technology that can be prepared quickly, at low cost and with high repeatability is of great significance to promote the commercial development of perovskite solar cells. However, the current perovskite FAPbI based on electrodeposition 3 There is no research report on solar cells yet. Summary of the invention

[0003] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide a FAPbI based on electrodeposition technology. 3 Solar cell and rapid preparation method thereof.

[0004] In order to achieve the above object, the present invention adopts the following technical solution:

[0005] A FAPbI based on electrodeposition technology 3 Solar cells, including:

[0006] Transparent conductive substrate;

[0007] An electron transport layer, disposed on the transparent conductive substrate;

[0008] Perovskite FAPbI 3 A layer disposed on the electron transport layer;

[0009] a hole transport layer disposed on the perovskite layer;

[0010] The metal electrode is disposed on the hole transport layer.

[0011] The transparent conductive substrate is an ITO or FTO substrate.

[0012] The electron transport layer is SnO 2 、TiO 2 , CdS or at least one of the following.

[0013] The perovskite FAPbI 3 The layer is composed of PbO electrodeposited on the electron transport layer 2 Thin films and spin coating on PbO 2 The FAI film on the film surface is obtained by rapid reaction.

[0014] A FAPbI based on electrodeposition technology 3 A rapid preparation method for a solar cell comprises the following steps:

[0015] Step 1: Spin coating an electron transport layer on a transparent conductive substrate and annealing;

[0016] Step 2: Electrodeposition of PbO on the Electron Transport Layer 2 film;

[0017] Step 3: In PbO 2 The film was spin-coated with FAI solution and then annealed;

[0018] Step 4: In the perovskite FAPbI 3 Spin coating a hole transport layer on the layer;

[0019] Step 5: Evaporate a metal electrode on the hole transport layer.

[0020] In step 1, the spin coating time of the electron transport layer is 30 to 60 seconds, and the rotation speed is 4000 to 6000 rpm.

[0021] The electrodeposition solution used in step 2 is Pb(CH 3 COO 2 and NaNO 3 A mixed acidic aqueous solution; the electrodeposition voltage is 1.5 to 2 V, and the deposition time is 3 to 20 s.

[0022] In step 3, the solvent of the FAI solution is isopropanol, the concentration is 30-90 mg / mL, the spin coating speed is 1000-6000 rpm, and the spin coating time is 30-60 s; the annealing temperature after spin coating the FAI solution is 100-150° C., and the annealing time is 2-100 s.

[0023] In step 4, the hole transport layer is at least one of Spiro-OMeTAD, P3HT, and PTAA.

[0024] In step 5, the metal electrode is at least one of gold, silver and aluminum.

[0025] The beneficial effects of the present invention are:

[0026] (1) The present invention uses electrodeposited PbO 2 Thin film replaces PbI 2 Preparation of FAPbI by reaction of film with FAI 3 The film is applied to solar cells, and pure perovskite FAPbI can be obtained after annealing for 1 minute or even shorter time. 3 The thin film has good repeatability and high efficiency in the preparation of solar cells, which greatly improves the preparation efficiency of perovskite solar cells compared with the existing device preparation method.

[0027] (2) The electrodeposition technology adopted in the present invention is not only low-cost, simple in process, and well controllable, but can also be applied to the preparation of large-area perovskite films, thereby accelerating the commercialization process of perovskite solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 The perovskite FAPbI of one embodiment of the present invention 3 Schematic diagram of the rapid preparation process of solar cells;

[0029] Figure 2 The perovskite FAPbI of one embodiment of the present invention 3 Scanning electron microscopy (SEM) images of the films;

[0030] Figure 3 The perovskite FAPbI of one embodiment of the present invention 3 X-ray diffraction pattern (XRD) of the film;

[0031] Figure 4 The perovskite FAPbI of one embodiment of the present invention 3 Schematic diagram of the device structure of a solar cell;

[0032] Figure 5 The perovskite FAPbI of one embodiment of the present invention 3 SEM cross-sectional view of solar cell;

[0033] Figure 6 The perovskite FAPbI of one embodiment of the present invention 3 The volt-ampere characteristic curve of a solar cell. DETAILED DESCRIPTION

[0034] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0035] The present invention is a FAPbI based on electrodeposition technology 3Solar cell and rapid preparation method thereof, prepared FAPbI 3 The solar cell includes a transparent conductive substrate, an electron transport layer, and a perovskite FAPbI 3 Layer, hole transport layer, metal electrode. Among them, the transparent conductive substrate is followed by the electron transport layer, the perovskite FAPbI 3 layer, hole transport layer, and metal electrode. The substrate of the present invention is an ITO substrate or a FTO substrate, but is not limited to the above substrates; the electron transport layer is SnO 2 、TiO 2 , CdS; Perovskite FAPbI 3 The layer is composed of PbO electrodeposited on the electron transport layer 2 Thin films and spin coating on PbO 2 The FAI film on the film surface is obtained by rapid reaction.

[0036] The present invention uses an unreported electrodeposition technique to prepare the perovskite FAPbI 3 Thin film, PbO by electrodeposition 2 The film provides a source of lead, in PbO 2 The surface is spin-coated with FAI film, and after annealing, FAI and PbO 2 Rapid reaction to obtain FAPbI 3 The perovskite FAPbI film is then prepared on the perovskite layer, and a metal electrode is deposited on the hole transport layer to obtain the perovskite FAPbI 3 Solar cells. Due to the interaction between FAI and PbO 2 The reaction is rapid and greatly improves the perovskite FAPbI 3 The preparation efficiency of solar cells, and the prepared perovskite FAPbI 3 The solar cell has good repeatability and high efficiency. The preparation method of the invention saves time, has low cost, simple process, good repeatability, and also has good application prospects in the preparation of large-area and high-efficiency perovskite solar cells.

[0037] Figure 1 It is a perovskite FAPbI in one of the preferred embodiments of the present invention. 3 Schematic diagram of the preparation process of solar cells. First, SnO is spin-coated on the cleaned transparent conductive ITO substrate by spin coating. 2 The electron transport layer was obtained by annealing the aqueous solution of the spin coating for 40 seconds, the rotation speed was 4000 rpm, the annealing temperature was 150 ° C, and the annealing time was 30 minutes; then, the Pb(CH 3 COO 2 and NaNO 3 PbO deposition in mixed acidic aqueous solution 2The electrodeposition voltage was 1.5 V and the deposition time was 5 s. 2 The film was spin-coated with FAI solution, wherein the solvent of the FAI solution was isopropanol, the concentration was 60 mg / mL, the spin-coating speed was 4000 rpm, the spin-coating time was 60 s, and then annealed at 120 ° C for 1 min to obtain the perovskite FAPbI 3 layer, in the perovskite FAPbI 3 The hole transport layer Spiro-OMeTAD is spin-coated on the layer and then the gold electrode is evaporated to obtain the perovskite FAPbI 3 Solar cell.

[0038] Figure 2 The perovskite FAPbI of the above embodiment 3 Scanning electron microscopy (SEM) image of the film. It can be seen that the prepared FAPbI 3 The film has large grains, clear grain boundaries and good uniformity.

[0039] Figure 3 The perovskite FAPbI of the above embodiment 3 The X-ray diffraction pattern (XRD) of the film shows that the FAPbI prepared by the present invention 3 The (001) and (002) crystal planes corresponding to the characteristic diffraction peaks of the film do not have any other impurities, indicating that the prepared FAPbI 3 The film crystallinity is very good.

[0040] Figure 4 Schematic diagram of the structure of the perovskite solar cell device in the above embodiment. 3 The perovskite FAPbI was obtained by spin coating the hole transport layer Spiro-OMeTAD on the layer and evaporating an 80nm gold electrode. 3 Solar cells. Figure 4 As shown, 1 is an ITO transparent conductive substrate, 2 is a SnO 2 Electron transport layer, 3 is perovskite FAPbI 3 4 is the light absorbing layer, 4 is the hole transport layer Spiro-OMeTAD, and 5 is the gold electrode.

[0041] Figure 5 The perovskite FAPbI of the above embodiment 3 SEM cross-sectional view of a solar cell. Corresponding to the schematic diagram of the device structure, from top to bottom are the ITO transparent conductive substrate, SnO 2 Electron transport layer, perovskite FAPbI 3The light absorption layer, the hole transport layer Spiro-OMeTAD and the gold electrode. It can be seen that the close contact between the layers is conducive to the separation and transmission of photogenerated carriers. The prepared FAPbI 3 Solar cells are tested and analyzed.

[0042] Figure 6 The perovskite FAPbI of the above embodiment 3 The volt-ampere characteristic curve of the solar cell. It can be seen that the opening voltage of the prepared perovskite solar cell is 1.00V and the short-circuit current is 20.41mA / cm 2 , the filling factor is 69.31%, and the photoelectric conversion efficiency is 13.33%.

[0043] From the above embodiments, it can be seen that the present invention is a PbO deposited by electrodeposition technology. 2 Provide a lead source so that it reacts quickly with FAI after annealing to obtain FAPbI 3 Thin films and in FAPbI 3 The perovskite solar cell is obtained by spin coating Spiro-OMeTAD and then evaporating a gold electrode. The preparation method of the invention greatly improves the preparation efficiency of the perovskite solar cell compared with the existing preparation method.

[0044] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A FAPbI based on electrodeposition technology 3 Solar cells, It is characterized in that include: Transparent conductive substrate; The transparent conductive substrate is an ITO or FTO substrate; An electron transport layer, disposed on the transparent conductive substrate; The electron transport layer is SnO 2 、TiO 2 , CdS; Perovskite FAPbI 3 A layer disposed on the electron transport layer; The perovskite FAPbI 3 The layer is composed of PbO electrodeposited on the electron transport layer 2 Thin films and spin coating on PbO 2 The FAI film on the film surface is produced by rapid reaction; The hole transport layer is placed on the perovskite FAPbI 3 on the layer; The metal electrode is disposed on the hole transport layer.

2. A FAPbI based on electrodeposition technology according to claim 1 3 Rapid preparation method of solar cells, It is characterized in that The steps include: Step 1: Spin coating an electron transport layer on a transparent conductive substrate and annealing; Step 2: Electrodeposition of PbO on the Electron Transport Layer 2 film; Step 3: In PbO 2 The film was spin-coated with FAI solution and then annealed to make FAI and PbO 2 Fast reaction to obtain perovskite FAPbI 3 layer; Step 4: In the perovskite FAPbI 3 Spin coating a hole transport layer on the layer; Step 5: Evaporate a metal electrode on the hole transport layer.

3. A FAPbI based on electrodeposition technology according to claim 2 3 Rapid preparation method of solar cells, It is characterized in that In step 1, the spin coating time of the electron transport layer is 30-60 s, the rotation speed is 4000-6000 rpm, and the annealing temperature is 150-180 °C.

4. A FAPbI based on electrodeposition technology according to claim 2 3 Rapid preparation method of solar cells, It is characterized in that The electrodeposition solution used in step 2 is Pb(CH 3 COO 2 and NaNO 3 Mixed acidic aqueous solution; electrodeposition voltage is 1.5~2 V, and deposition time is 3~20 s.

5. A FAPbI based on electrodeposition technology according to claim 2 3 Rapid preparation method of solar cells, It is characterized in that In the step 3, the solvent of the FAI solution is isopropanol, the concentration is 30-90 mg / mL, the spin coating speed is 1000-6000 rpm, and the spin coating time is 30-60 s; the annealing temperature after spin coating the FAI solution is 100-150°C, and the annealing time is 2-100 s.

6. A FAPbI based on electrodeposition technology according to claim 2 3 Rapid preparation method of solar cells, It is characterized in that The hole transport layer is at least one of Spiro-OMeTAD, P3HT, and PTAA.

7. A FAPbI based on electrodeposition technology according to claim 2 3 Rapid preparation method of solar cells, It is characterized in that The metal electrode is at least one of gold, silver and aluminum.

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