Degassing apparatus, substrate processing apparatus, and method for degassing a processing solution

Abstract

A degassing device, a substrate processing device, and a method for degassing a processing solution are disclosed. The degassing device includes a dissolved gas extraction nozzle that extracts a dissolved gas in the form of bubbles from a processing solution including the dissolved gas, a first tank that separates the extracted bubbles from the processing solution that passes through the dissolved gas extraction nozzle, and a second tank having a stabilization space in which the processing solution is stored from the first tank and stabilized from which the bubbles have been separated. The dissolved gas extraction nozzle is configured such that a diameter of an outlet is smaller than a diameter of an intermediate passage so that the dissolved gas in the processing solution is extracted in the form of bubbles by a cavitation phenomenon.

Description

[0001] Cross-reference of related technologies

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0116370, filed with the Korean Intellectual Property Office on September 10, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a degassing apparatus for removing air bubbles from a processing solution in an apparatus for processing a substrate, a substrate processing apparatus, and a method for degassing the processing solution. Background Technology

[0004] In semiconductor manufacturing, photolithography is the process of forming desired patterns on a wafer. Photolithography is performed in a spinner local facility, which is typically connected to an exposure facility and sequentially executes deposition, exposure, and development processes. The spinner local facility performs hexamethyldisilazane (HMDS) processing, deposition, baking, and development processes sequentially or selectively.

[0005] Figure 11 This is a view showing the treatment solution supply unit in a processing apparatus that performs a conventional deposition process.

[0006] like Figure 11 As shown, in existing processing solution supply devices, degassing devices 4 are installed on the supply lines 5 connecting pump 2 and nozzle 3. After removing air bubbles from the degassing devices 4, the processing solution supplied to the nozzle 3 of the liquid processing device is supplied to the nozzle 3. Conventional degassing devices 4 used in semiconductor processes remove air bubbles by vacuum pulling a thin film (gas permeation membrane), thus the film is continuously subjected to load and may be damaged after a certain period of time.

[0007] Furthermore, because the membrane is prone to tearing when the force exerted by the vacuum pulls it (gas permeation membrane) becomes stronger, air bubbles in the treatment solution must be extracted with minimal vacuum force. Therefore, the flow rate must be limited to maintain the degassing efficiency at a specific level. Consequently, the membrane must be positioned close to the low-flow discharge component (nozzle), and the area of ​​the membrane exposed to vacuum must be maintained so that the membrane size cannot be reduced.

[0008] Furthermore, in the degassing unit 4, due to the problem of handling the solution through the gas permeation membrane during the process of removing bubbles, the ejector components and vacuum pump that control the vacuum may be damaged, so a separate drain pump is required. Summary of the Invention

[0009] The embodiments of the present invention provide an easy-to-maintain degassing device, a substrate processing device, and a method for degassing a processing solution.

[0010] The embodiments of the present invention also provide a degassing apparatus, a substrate processing apparatus, and a method for degassing a processing solution, which can effectively remove dissolved gases from a processing solution.

[0011] An embodiment of the present invention also provides a degassing device for effectively removing air bubbles from the processing solution at the front end of a pump unit, a substrate processing device, and a method for degassing the processing solution.

[0012] The embodiments of the present invention provide a degassing apparatus capable of supplying sufficient flow, a substrate processing apparatus, and a method for degassing a processing solution.

[0013] The problems to be solved by the present invention are not limited to those described above. Other technical objectives not mentioned will be clearly understood by those skilled in the art from the following description.

[0014] According to one embodiment, a degassing device includes: a dissolved gas extracting nozzle that extracts dissolved gas in the form of bubbles from a treatment solution containing dissolved gas; and a first tank that separates the extracted bubbles from the treatment solution as they pass through the dissolved gas extracting nozzle.

[0015] Furthermore, the dissolved gas extraction nozzle can be configured such that the diameter of the intermediate channel connecting the inlet and outlet of the dissolved gas extraction nozzle is larger than the diameter of the inlet and the diameter of the outlet.

[0016] Furthermore, the dissolved gas extraction nozzle may include: a body having a central channel through which the treatment solution flows; an inlet on one side of the central channel through which the treatment solution is introduced; and an outlet on the opposite side of the central channel through which the treatment solution is discharged; and the cross-section of the outlet may be smaller than the cross-section of the central channel, such that the dissolved gas in the treatment solution is extracted in the form of bubbles by cavitation phenomenon.

[0017] In addition, the first tank may include: a first supply port located at the upper end of the first tank, through which the treatment solution and bubbles are introduced; a first case having an upper space connected to the first supply port; a second case surrounding the first case and having an outer space in which the treatment solution and bubbles introduced from the upper space are separated between the first case and the second case; and a first exhaust port located at the upper end of the outer space, through which bubbles separated from the treatment solution are discharged.

[0018] In addition, the first chamber may include: a first flow channel through which the treatment solution and bubbles flow from the upper space to the outer space; a lower space, which is separated from the upper space by a horizontal partition wall, and in which the treatment solution is stored from the outer space and from which bubbles have been removed; and a second flow channel through which the treatment solution flows between the outer space and the lower space, the second flow channel being located at the lower end of the vertical partition wall separating the lower space and the outer space.

[0019] In addition, the first tank may also include a first discharge port through which the treatment solution is discharged from the lower space.

[0020] The second housing may also include a baffle that is horizontally mounted in the outer space so that the treatment solution introduced into the outer space through the first flow channel is not introduced into the first discharge port.

[0021] In addition, the degassing device may also include a second tank with a stabilization space in which the treatment solution stored and stabilized from the first tank, and the bubbles separated from the treatment solution, are separated.

[0022] In addition, the second tank may include: a second supply port located at the lower end of the second tank, through which a treatment solution is introduced from the first tank, and through which bubbles have been separated from the treatment solution; a second discharge port located at the upper end of the second tank, through which bubbles separated from the treatment solution stabilized in the stabilization space are discharged; and a second discharge port located at the lower end of the second tank, through which the treatment solution stored in the stabilization space is discharged.

[0023] According to one embodiment, a degassing device installed on a processing solution supply line includes: a dissolved gas extraction nozzle that extracts dissolved gas in the form of bubbles from a processing solution containing dissolved gas; a first tank that separates the extracted bubbles from the processing solution as they pass through the dissolved gas extraction nozzle; and a second tank having a stabilization space in which the processing solution is stored and stabilized from the first tank, the bubbles having been separated from the processing solution, and the dissolved gas extraction nozzle is configured such that the diameter of the outlet is smaller than the diameter of the intermediate channel, such that the dissolved gas in the processing solution is extracted in the form of bubbles by cavitation.

[0024] Furthermore, the first tank may include: a first supply port located at the upper end of the first tank, through which the treatment solution and bubbles are introduced; a first housing having an upper space connected to the first supply port and a lower space in which the treatment solution is stored from the outer space and from which bubbles have been removed; a second housing surrounding the first housing and having an outer space in which the treatment solution and bubbles introduced from the upper space are separated between the first housing and the second housing; a first outlet located at the upper end of the outer space, through which bubbles separated from the treatment solution are discharged from the outer space; and a first discharge port located at the lower end of the outer space, through which the treatment solution stored in the lower space is discharged. The first housing may also include: a first flow channel through which the treatment solution and bubbles flow from the upper space to the outer space; and a second flow channel through which the treatment solution flows between the outer space and the lower space, the second flow channel being located at the lower end of a vertical partition wall separating the lower space.

[0025] In addition, the second housing may also include a baffle that is installed horizontally in the outer space so that the treatment solution introduced into the outer space through the first flow channel is not introduced into the first discharge port.

[0026] In addition, the second tank may include: a second supply port located at the lower end of the second tank, connected to the first discharge port via a connection pipeline, through which a treatment solution from which bubbles have been separated is introduced; a second discharge port located at the upper end of the second tank, through which bubbles separated from the treatment solution stabilized in the stabilization space are discharged; and a second discharge port located at the lower end of the second tank, through which the treatment solution stored in the stabilization space is discharged.

[0027] According to one embodiment, a substrate processing apparatus may include: a processing device that processes a substrate using a processing solution; and a processing solution supply unit that supplies the processing solution to a nozzle of the processing device, the processing solution supply unit comprising: a bottle in which the processing solution is stored; a degassing device having a dissolved gas extraction nozzle that extracts dissolved gas in the form of bubbles from the processing solution received from the bottle; and a pump that supplies the processing solution stored in the degassing device to the nozzle of the processing device, wherein the dissolved gas has been separated from the processing solution.

[0028] In addition, the degassing device may include: a first tank that separates extracted bubbles from the treatment solution by passing them through a dissolved gas extraction nozzle; a second tank having a stabilization space in which the treatment solution, from which bubbles have been separated in the first tank, is stored and stabilized; and a connecting pipe that connects the lower ends of the first tank and the lower ends of the second tank.

[0029] Furthermore, the dissolved gas extraction nozzle can be configured such that the diameter of the intermediate channel connecting the inlet and outlet of the dissolved gas extraction nozzle is larger than the diameter of the inlet and the diameter of the outlet.

[0030] Furthermore, the first tank may include: a first supply port located at the upper end of the first tank, through which the treatment solution and bubbles are introduced; a first housing having an upper space connected to the first supply port and a lower space in which the treatment solution, from which bubbles have been removed, is stored from the outer space; a second housing surrounding the first housing and having an outer space in which the treatment solution and bubbles introduced from the upper space are separated between the first housing and the second housing; and a first discharge port located at the upper end of the outer space, through which bubbles separated from the treatment solution are discharged from the outer space. The first housing may also include: a first flow channel through which the treatment solution and bubbles flow from the upper space to the outer space; and a second flow channel through which the treatment solution flows between the outer space and the lower space, the second flow channel being located at the lower end of a vertical partition wall separating the lower space.

[0031] In addition, the first tank may also include a first discharge port through which the treatment solution is discharged from the lower space.

[0032] In addition, the second housing may also include a baffle that is installed horizontally in the outer space so that the treatment solution introduced into the outer space through the first flow channel is not introduced into the first discharge port.

[0033] In addition, the second tank may include: a second supply port located at the lower end of the second tank, through which a treatment solution is introduced from the first tank, from which bubbles have been separated; a second discharge port located at the upper end of the second tank, through which bubbles separated from the treatment solution stabilized in the stabilization space are discharged; and a second discharge port located at the lower end of the second tank, through which the treatment solution stored in the stabilization space is discharged.

[0034] According to one embodiment, a method for degassing a treatment solution includes: extracting dissolved gas in the form of bubbles from the treatment solution containing dissolved gas through a dissolved gas extraction nozzle; separating the bubbles extracted in a first tank from the treatment solution; and performing stabilization by receiving the treatment solution and storing the received treatment solution in a second tank, wherein the bubbles have been separated from the treatment solution in the first tank.

[0035] Furthermore, in the extraction of dissolved gases, dissolved gases in the treatment solution can be extracted in the form of bubbles through cavitation. Attached Figure Description

[0036] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, the same reference numerals refer to the same parts in the various drawings, and in the drawings:

[0037] Figure 1 This is a plan view of a substrate processing facility according to a first embodiment of the present invention;

[0038] Figure 2 yes Figure 1 facilities along Figure 1 A cross-sectional view of line AA;

[0039] Figure 3 yes Figure 1 system along Figure 1 A cross-sectional view of line BB;

[0040] Figure 4 yes Figure 1 system along Figure 1 A cross-sectional view of line CC;

[0041] Figure 5 This is a view showing a treatment solution supply device that supplies treatment solution to the resist application chamber;

[0042] Figure 6 It shows Figure 5 A perspective view of the degassing device shown;

[0043] Figure 7It shows Figure 6 A cross-sectional view of the degassing device shown;

[0044] Figure 8 This is a view showing the dissolved gas extraction nozzle;

[0045] Figure 9 This is a view showing a first modified example of the degassing device;

[0046] Figure 10 This is a view showing a second modified example of the degassing device; and

[0047] Figure 11 This is a view showing the treatment solution supply unit in a processing apparatus that performs a conventional deposition process. Detailed Implementation

[0048] In the following, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings, enabling those skilled in the art to readily implement the inventive concept. However, the inventive concept can be implemented in various different forms and is not limited to the embodiments described herein. Furthermore, in the description of embodiments of the inventive concept, detailed descriptions of related known functions or configurations will be omitted where it is unnecessary to obscure the essence of the inventive concept. Additionally, throughout the drawings, components with similar functions and operations use the same reference numerals.

[0049] The expression “comprising” certain elements may mean that other elements may be further included without excluding them, unless there is a particularly contradictory description. The terms “comprising” and “having” are used to indicate the presence of the features, numbers, steps, operations, elements, components or combinations thereof described in the specification, and may be understood to mean that one or more other features, numbers, steps, operations, elements, components or combinations thereof may be added.

[0050] Terms such as "first" and "second" can be used to describe various elements, but the elements are not limited to those terms. Terms may be used only for the purpose of distinguishing one element from another. For example, without departing from the scope of the inventive concept, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0051] Unless otherwise stated, singular terms may include plural forms. Furthermore, in the accompanying drawings, the shape and size of elements may be exaggerated for clearer description.

[0052] The system of this embodiment of the present invention can be used to perform photolithography processes on substrates such as semiconductor substrates or flat panel display panels. Specifically, the system of this embodiment can be connected to an exposure apparatus to perform deposition and development processes on the substrate. Hereinafter, an example using a wafer as the substrate will be described.

[0053] Hereinafter, the substrate processing facility of the present invention will be referred to Figures 1 to 7 Describe it.

[0054] Figure 1 This is a view of the substrate processing facility when viewed from above. Figure 2 yes Figure 1 facilities along Figure 1 A cross-sectional view of line AA. Figure 3 yes Figure 1 system along Figure 1 A cross-sectional view of line BB. Figure 4 yes Figure 1 system along Figure 2 A cross-sectional view of line CC.

[0055] refer to Figures 1 to 4 The substrate processing facility 1 may include a loading port 100, an indexing module 200, a first buffer module 300, a deposition / development module 400, a second buffer module 500, a pre-exposure / post-exposure processing module 600, and an interface module 700.

[0056] The loading port 100, index module 200, first buffer module 300, deposition / development module 400, second buffer module 500, pre-exposure / post-exposure processing module 600 and interface module 700 can be arranged in a row in one direction.

[0057] Hereinafter, the orientation of the loading port 100, index module 200, first buffer module 300, deposition / development module 400, second buffer module 500, pre-exposure / post-exposure processing module 600 and interface module 700 will be referred to as the first orientation 12, and the orientation perpendicular to the first orientation 12 when viewed from the top will be referred to as the second orientation 14, and the orientation perpendicular to the first orientation 12 and the second orientation 14 will be referred to as the third orientation 16.

[0058] The substrate "W" is moved while being received in the housing 20. The housing 20 then has a structure that is sealed from the outside. For example, a front-open unified pod (FOUP) with a door on the front side can be used as housing 20.

[0059] The following will describe in detail the loading port 100, index module 200, first buffer module 300, deposition / development module 400, second buffer module 500, pre- / post-exposure processing module 600, and interface module 700.

[0060] The loading port 100 has a carrier 120, in which a cartridge 20, receiving a substrate "W", is located on the carrier 120. Multiple carriers 120 are provided, and the multiple carriers 120 are arranged in a row along a second direction 14. Figure 1 In the middle, four carriers 120 were set up.

[0061] Index module 200 supplies substrate "W" between box 20 on carrier 120 located at loading port 100 and first buffer module 300. Index module 200 has frame 210, indexing robot 220, and guide rail 230. Frame 210 has a basic rectangular parallelepiped shape with an empty interior and is disposed between loading port 100 and first buffer module 300. The height of frame 210 of index module 200 may be less than the height of frame 310 of first buffer module 300 (described below). Indexing robot 220 and guide rail 230 are disposed in frame 210. Indexing robot 220 has a four-axis drive structure, such that hand 221, which directly manipulates substrate "W", is movable and rotatable in a first direction 12, a second direction 14, and a third direction 16. Indexing robot 220 includes hand 221, arm 222, support 223, and prop 224. Hand 221 is fixedly mounted in arm 222. The arm 222 has a flexible and rotatable structure. The support member 223 is configured such that its longitudinal direction is along a third direction 16. The arm 222 is coupled to the support member 223 to be movable along the support member 223. The support member 223 is fixedly coupled to the support column 224. The guide rail 230 is configured such that its longitudinal direction is along a second direction 14. The support column 224 is coupled to the guide rail 230 to be linearly movable along the guide rail 230. Although not shown, the frame 210 is also provided with a door opener for opening and closing the door of the box 20.

[0062] The first buffer module 300 includes a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 has a rectangular parallelepiped shape with an empty interior and is disposed between the index module 200 and the deposition / development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially arranged from the bottom along a third direction 16. The first buffer 320 is located at a height corresponding to the deposition module 401 of the deposition / development module 400 (described below), and the second buffer 330 and the cooling chamber 350 are located at a height corresponding to the development module 402 of the deposition / development module 400 (described below). The first buffer robot 360 is spaced a predetermined distance from the second buffer 330, the cooling chamber 350, and the first buffer 320 in a second direction 14.

[0063] The first buffer 320 and the second buffer 330 temporarily hold multiple substrates "W". The second buffer 330 has a housing 331 and multiple supports 332. The supports 332 are disposed within the housing 331 and spaced apart from each other along a third direction 16. A substrate "W" is located on each of the supports 332. The housing 331 has openings (not shown) on the side where the indexing robot 220 is disposed, the side where the first buffering robot 360 is disposed, and the side where the developing robot 482 is disposed, such that the indexing robot 220, the first buffering robot 360, and the developing robot 482 of the developing module 402 (described below) load or unload the substrates "W" into or out of the supports 332 within the housing 331. The structure of the first buffer 320 is substantially similar to that of the second buffer 330. Meanwhile, the housing 321 of the first buffer zone 320 has openings on the side where the first buffer manipulator 360 is located and on the side where the deposition manipulator 432 located in the deposition module 401 (described below) is located. The number of support members 322 provided for the first buffer zone 320 and the number of support members 332 provided for the second buffer zone 330 may be the same or different. According to one embodiment, the number of support members 332 provided for the second buffer zone 330 may be greater than the number of support members 332 provided for the first buffer zone 320.

[0064] A first buffer robot 360 transfers a substrate “W” between a first buffer zone 320 and a second buffer zone 330. The first buffer robot 360 has a hand 361, an arm 362, and a support member 363. The hand 361 is fixedly mounted in the arm 362. The arm 362 has a flexible structure and allows the hand 361 to move along a second direction 14. The arm 362 is coupled to the support member 363 to be linearly movable along the support member 363 in a third direction 16. The length of the support member 363 extends from a position corresponding to the second buffer zone 330 to a position corresponding to the first buffer zone 320. The support member 363 can be configured to extend further upwards or downwards. The first buffer robot 360 can be configured such that the hand 361 is simply driven in both the second direction 14 and the third direction 16.

[0065] Cooling chamber 350 cools substrate "W". Cooling chamber 350 has housing 351 and cooling plate 352. Cooling plate 352 has cooling unit 353, which cools the upper surface of cooling plate 352 and substrate "W", which is located on the upper surface of cooling plate 352. Various types of cooling units can be used as cooling unit 353, such as cooling types using cooling water and cooling types using thermoelectric elements. A lifting pin assembly (not shown) for positioning substrate "W" on cooling plate 352 can be provided in cooling chamber 350. Housing 351 has openings (not shown) on the side where indexing robot 220 is provided and on the side where developing robot 482 is provided, such that indexing robot 220 and developing robot 482 provided for developing module 402 (described below) load or unload substrate "W" into or out of cooling plate 352. Doors (not shown) for opening and closing the aforementioned openings can be provided in cooling chamber 350.

[0066] The deposition / development module 400 performs a process of applying resist to the substrate "W" before the exposure process and a process of developing the substrate "W" after the exposure process. The deposition / development module 400 has a generally rectangular parallelepiped shape. The deposition / development module 400 has a deposition module 401 and a developing module 402. The deposition module 401 and the developing module 402 can be arranged to be separated from each other in different layers. According to one embodiment, the deposition module 401 is located on the developing module 402.

[0067] The deposition module 401 performs a process of applying a photosensitive liquid, such as a resist, to a substrate "W," and performs heat treatment processes, such as heating and cooling the substrate "W," before and after the resist application process. The deposition module 401 has a resist application chamber 410, a baking chamber 420, and a transfer chamber 430. The resist application chamber 410, baking chamber 420, and transfer chamber 430 are arranged sequentially along a second direction 14. Therefore, the resist application chamber 410 and baking chamber 420 are spaced apart from each other in the second direction 14, while the transfer chamber 430 is located between the resist application chamber and the baking chamber. Multiple resist application chambers 410 can be provided, and multiple resist application chambers 410 can be provided on each of the first direction 12 and the third direction 16. In the figures, six resist application chambers 410 are shown as an embodiment. Multiple baking chambers 420 can be provided on each of the first direction 12 and the third direction 16. The accompanying drawings show six baking chambers 420 as an example. However, a larger number of baking chambers 420 can be provided.

[0068] The transfer chamber 430 is positioned parallel to the first buffer zone 320 of the first buffer module 300 in the first direction 12. The deposition robot 432 and guide rail 433 can be positioned within the transfer chamber 430. The transfer chamber 430 has a generally rectangular shape. The deposition robot 432 supplies substrate “W” between the baking chamber 420, the resist application chamber 410, the first buffer zone 320 of the first buffer module 300, and the first cooling chamber 520 of the second buffer module 50. The guide rail 433 is arranged such that its longitudinal direction is parallel to the first direction 12. The deposition robot 432 has a hand 434, an arm 435, a support 436, and a support column 437. The hand 434 is fixedly mounted in the arm 435. The arm 435 has a flexible structure, allowing the hand 434 to be horizontally movable. The support member 436 is configured such that its longitudinal direction is along a third direction 16. An arm 435 is coupled to the support member 436 to be linearly movable along the support member 436 in the third direction 16. The support member 436 is fixedly coupled to a support column 437, and the support column 437 is coupled to a guide rail 433 to be movable along the guide rail 433.

[0069] The resist application chamber 410 has the same structure. However, the type of photoresist used in the resist application chamber 410 can be different. For example, the photoresist can be a chemically amplified resist. The resist application chamber 410 applies photoresist to the substrate "W".

[0070] The resist application chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has an open-top cup shape. The support plate 412 is located in the housing 411 and supports the substrate "W". The support plate 412 may be configured to be rotatable. The nozzle 413 supplies photoresist to the substrate "W" located on the support plate 412. The nozzle 413 has a cylindrical shape and can supply photoresist to the center of the substrate "W". Optionally, the length of the nozzle 413 may correspond to the diameter of the substrate "W", and the outlet of the nozzle 413 may be a slit. Additionally, a nozzle 414 may be provided in the resist application chamber 410 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate "W" to which the photoresist is applied.

[0071] Refer again Figures 1 to 4The baking chamber 420 heats the substrate "W". For example, the baking chamber 420 performs a pre-baking process to remove organic matter and moisture from the surface of the substrate "W" by heating it at a predetermined temperature before applying photoresist, or a soft bake process after the photoresist is applied to the substrate "W", and a cooling process to cool the substrate "W" after the heating process. The baking chamber 420 has a cooling plate 421 and a heating plate 422. The cooling plate 421 is provided with a cooling unit 423, such as cooling water or a thermoelectric element. The heating plate 422 is provided with a heating unit 424, such as a heating wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 can be disposed in one baking chamber 420. Optionally, some baking chambers 420 may include only the cooling plate 421, and some baking chambers 422 may include only the heating plate 422.

[0072] The developing module 402 includes a process for removing photoresist to obtain a pattern by supplying developing liquid to a substrate "W", and heat treatment processes such as heating and cooling performed on the substrate "W" before and after the developing process. The developing module 402 has a developing chamber 460, a baking chamber 470, and a transfer chamber 480. The developing chamber 460, baking chamber 470, and transfer chamber 480 are sequentially arranged along a second direction 14. Therefore, the developing chamber 460 and baking chamber 470 are spaced apart from each other in the second direction 14, while the transfer chamber 480 is located between the developing chamber and the baking chamber. Multiple developing chambers 460 can be provided, and multiple developing chambers 460 can be provided on each of the first direction 12 and the third direction 16. Six developing chambers 460 are shown as an embodiment in the figures. Multiple baking chambers 470 can be provided on each of the first direction 12 and the third direction 16. Six baking chambers 470 are shown as an embodiment in the figures. However, unlike this, a greater number of baking chambers 470 can be set.

[0073] The transfer chamber 480 is positioned parallel to the second buffer zone 330 of the first buffer module 300 in the first direction 12. The developing robot 482 and guide rail 483 can be positioned within the transfer chamber 480. The transfer chamber 480 has a generally rectangular shape. The developing robot 482 supplies substrate "W" between the baking chamber 470, the developing chamber 460, the second buffer zone 330 and cooling chamber 350 of the first buffer module 300, and the second cooling chamber 540 of the second buffer module 500. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482, allowing it to move linearly in the first direction 12. The developing robot 482 has a hand 484, an arm 485, a support 486, and a support column 487. The hand 484 is fixedly mounted in the arm 485. The arm 485 has a flexible structure, allowing the hand 484 to move horizontally. Support member 486 is configured such that its longitudinal direction is along a third direction 16. Arm 485 is coupled to support member 486 to be linearly movable along support member 486 in the third direction 16. Support member 486 is fixedly coupled to support post 487. Support post 487 is coupled to guide rail 483 to be linearly movable along guide rail 483.

[0074] The developing chamber 460 has the same structure. However, the type of developer used in the developing chamber 460 can be different. The developing chamber 460 eliminates the light-illuminated areas of the photoresist on the substrate "W". Then, the light-illuminated areas of the protective film are also eliminated. Optionally, depending on the type of photoresist used, only the light-unilluminated areas of the photoresist and the protective film can be eliminated.

[0075] The developing chamber 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has an open-top cup shape. The support plate 462 is positioned within the housing 461 and supports a substrate "W". The support plate 462 may be rotatable. The nozzle 463 supplies developer to the substrate "W" located on the support plate 462. The nozzle 463 may have a cylindrical shape and may supply developer to the center of the substrate "W". Optionally, the length of the nozzle 463 may correspond to the diameter of the substrate "W", and the outlet of the nozzle 463 may be a slit. The developing chamber 460 may also be provided with a nozzle 464 that supplies a cleaning liquid, such as deionized water, to clean the surface of the substrate "W", with additional developer supplied to the surface of the substrate "W".

[0076] The baking chamber 470 of the developing module 402 heats the substrate "W". For example, the baking chamber 470 can perform a post-baking process of heating the substrate "W" before the developing process, a hard baking process of heating the substrate "W" after the developing process, and a cooling process of cooling the heated wafer after the baking process. The baking chamber 470 has a cooling plate 471 and a heating plate 472. The cooling plate 471 is provided with a cooling unit 473, such as cooling water or a thermoelectric element. The heating plate 472 is provided with a heating unit 474, such as a heating wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 can be disposed in one baking chamber 470. Optionally, some baking chambers 470 may include only the cooling plate 471, and some baking chambers 470 may include only the heating plate 472.

[0077] As described above, the deposition / development module 400 is configured such that the deposition module 401 and the development module 402 are separate. When viewed from above, the deposition module 401 and the development module 402 may have the same chamber disposition.

[0078] The second buffer module 500 is configured as a channel for conveying the substrate "W" between the deposition / development module 400 and the pre- / post-exposure module 600. The second buffer module 500 performs processes such as cooling processes or edge exposure processes on the substrate "W". The second buffer module 500 has a frame 510, a buffer zone 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560. The frame 510 has a rectangular parallelepiped shape. The buffer zone 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are positioned within the frame 510. The buffer zone 520, the first cooling chamber 530, and the edge exposure chamber 550 are positioned at a height corresponding to the deposition module 401. The second cooling chamber 540 is positioned at a height corresponding to the development module 402. The buffer zone 520, the first cooling chamber 530, and the second cooling chamber 540 are arranged in a row along a third direction 16. When viewed from above, the buffer zone 520 is positioned along the transfer chamber 430 of the deposition module 401 in the first direction 12. The edge exposure chamber 550 is spaced apart from the buffer zone 520 or the first cooling chamber 530 by a predetermined distance in the second direction 14.

[0079] A second buffer robot 560 transports the substrate "W" between the buffer zone 520, the first cooling chamber 530, and the edge exposure chamber 550. The second buffer robot 560 is located between the edge exposure chamber 550 and the buffer zone 520. The second buffer robot 560 may have a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform subsequent processing on the wafer "W," on which the deposition module 401 has already performed its process. The first cooling chamber 530 cools the substrate "W," on which the deposition module 401 has already performed its process. The first cooling chamber 530 has a structure similar to that of the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes the periphery of the wafer "W," on which the first cooling chamber 530 has already performed its cooling process. Before the substrate "W" is transferred to the preprocessing module 601 (described below), the buffer 520 temporarily holds the substrate "W," on which the edge exposure chamber 550 has already performed the process. Before the wafer "W" is transferred to the developing module 402, the second cooling chamber 540 cools the wafer "W," on which the post-processing module 602 (described below) has already performed the process. The second buffer module 500 may also have a buffer at a height corresponding to that of the developing module 402. In this case, the wafer "W" can be transferred to the developing module 402 after being temporarily held in the added buffer, on which the post-processing module 602 has already performed the process.

[0080] When the exposure apparatus 1000 performs an immersion / exposure process, the pre-exposure / post-exposure module 600 can perform a process of applying a protective film to the substrate "W" during the immersion / exposure process. The pre-exposure / post-exposure module 600 can also perform a process of cleaning the substrate "W" after the exposure process. Furthermore, when a deposition process is performed using a chemically amplified resist, the pre-exposure / post-exposure module 600 can perform a baking process after the exposure process.

[0081] The pre-exposure / post-exposure module 600 includes a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 performs a process to process the substrate "W" before the exposure process, and the post-processing module 602 performs a process to process the substrate "W" after the exposure process. The pre-processing module 601 and the post-processing module 602 can be disposed in different layers and separated from each other. According to one embodiment, the pre-processing module 601 is positioned on top of the post-processing module 602. The pre-processing module 601 has the same height as the deposition module 401. The post-processing module 602 has the same height as the developing module 402. The pre-processing module 601 includes a protective film application chamber 610, a baking chamber 620, and a transfer chamber 630. The protective film application chamber 610, the transfer chamber 630, and the baking chamber 620 are sequentially arranged along a second direction 14. Therefore, the protective film application chamber 610 and the baking chamber 620 are spaced apart from each other in the second direction 14, while the transfer chamber 630 is located between the protective film application chamber and the baking chamber. A plurality of protective film application chambers 610 are provided, and the plurality of protective film application chambers 610 are arranged along a third third direction 16 to form different layers. Optionally, the plurality of protective film application chambers 610 may be provided on each of the first direction 12 and the third third direction 16. A plurality of baking chambers 620 are provided, and the plurality of baking chambers 610 are arranged along a third third direction 16 to form different layers. Optionally, the plurality of baking chambers 620 may be provided on each of the first direction 12 and the third third direction 16.

[0082] The transfer chamber 630 is positioned parallel to the first cooling chamber 530 of the second buffer module 500 in a first direction 12. A pre-processing robot 632 is positioned within the transfer chamber 630. The transfer chamber 630 has a generally square or rectangular shape. The pre-processing robot 632 supplies a substrate “W” between the protective film application chamber 610, the baking chamber 620, the buffer zone 520 of the second buffer module 500, and the first buffer zone 720 of the interface module 700 (described below). The pre-processing robot 632 has a hand 633, an arm 364, and a support 635. The hand 633 is fixedly mounted in the arm 634. The arm 634 has a flexible and rotatable structure. The arm 634 is coupled to the support 635 for linear movement along the support 635 in a third direction 16.

[0083] The protective film application chamber 610 applies a protective film, protecting the photoresist film, to a substrate "W" during the immersion / exposure process. The protective film application chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has an open-topped cup shape. The support plate 612 is positioned within the housing 611 and supports the substrate "W". The support plate 612 may be rotatable. The nozzle 613 supplies a protective liquid for forming a protective film on the substrate "W" located on the support plate 612. The nozzle 613 has a cylindrical shape and can supply the protective liquid to the center of the substrate "W". Optionally, the length of the nozzle 613 may correspond to the diameter of the substrate "W", and the outlet of the nozzle 613 may be a slit. In this case, the support plate 612 may be fixed. The protective liquid comprises an expandable material. The protective liquid may be a material with low affinity for photoresist and water. For example, the protective liquid may include a fluorinated solvent. The protective film application chamber 610 supplies protective liquid to the central region of the substrate "W" while rotating the substrate "W" located on the support plate 612.

[0084] The baking chamber 620 heat-treats a substrate "W" to which a protective film is applied. The baking chamber 620 has a cooling plate 621 and a heating plate 622. The cooling plate 621 is provided with a cooling unit 623, such as cooling water or a thermoelectric element. The heating plate 622 is provided with a heating unit 624, such as a heating wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 can be disposed in one baking chamber 620. Optionally, some baking chambers 620 may include only the heating plate 622, and some baking chambers 620 may include only the cooling plate 621.

[0085] The post-processing module 602 includes a cleaning chamber 660, a post-exposure baking chamber 670, and a transfer chamber 680. The cleaning chamber 660, transfer chamber 680, and post-exposure baking chamber 670 are sequentially arranged along a second direction 14. Therefore, the cleaning chamber 660 and the post-exposure baking chamber 670 are spaced apart from each other in the second direction 14, while the transfer chamber 680 is located between the cleaning chamber and the post-exposure baking chamber. A plurality of cleaning chambers 660 are provided, and the plurality of cleaning chambers 610 are arranged along a third direction 16 to form different layers. Optionally, the plurality of cleaning chambers 660 can be provided on each of the first direction 12 and the third direction 16. A plurality of post-exposure baking chambers 670 are provided, and the plurality of post-exposure baking chambers 670 are arranged along the third direction 16 to form different layers. Optionally, the plurality of post-exposure baking chambers 670 can be provided on each of the first direction 12 and the third direction 16.

[0086] Viewed from above, the transfer chamber 680 is positioned parallel to the second cooling chamber 540 of the second buffer module 500 in the first direction 12. The transfer chamber 680 has a generally square or rectangular shape. A post-processing robot 682 is positioned within the transfer chamber 680. The post-processing robot 682 transfers substrates "W" between the cleaning chamber 660, the post-exposure baking chamber 670, the second cooling chamber 540 of the second buffer module 500, and the second buffer 730 of the interface module 700 (described below). The post-processing robot 682 disposed in the post-processing module 602 may have the same structure as the pre-processing robot 632 disposed in the pre-processing module 601.

[0087] Cleaning chamber 660 cleans substrate "W" after the exposure process. Cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. Housing 661 has an open-topped cup shape. Support plate 662 is positioned within housing 661 and supports substrate "W". Support plate 662 may be rotatable. Nozzle 663 supplies cleaning liquid to substrate "W" located on support plate 662. The cleaning liquid may be water, such as deionized water. Cleaning chamber 660 supplies cleaning liquid to the central region of substrate "W" while rotating substrate "W" located on support plate 662. Optionally, nozzle 663 may move linearly from the central region of substrate "W" or rotate to the peripheral region of substrate "W" while substrate "W" is rotated.

[0088] Following the exposure process, the post-exposure baking chamber 670 heats the substrate "W" using far-infrared radiation, on which the exposure process has already been performed. In the baking process following the exposure process, the substrate "W" is heated to amplify the acid generated in the photoresist, thereby altering the properties of the photoresist. The post-exposure baking chamber 670 has a heating plate 672. The heating plate 672 is provided with a heating unit 674, such as a heating wire or a thermoelectric element. The post-exposure baking chamber 670 may also have a cooling plate 671 disposed therein. The cooling plate 671 is provided with a cooling unit 673, such as cooling water or a thermoelectric element. Optionally, a baking chamber with only a cooling plate 671 may also be provided.

[0089] As described above, the pre-exposure / post-exposure module 600 is configured such that the pre-processing module 601 and the post-processing module 602 are completely separated from each other. The transfer chamber 630 of the pre-processing module 601 and the transfer chamber 680 of the post-processing module 602 may have the same size and may completely cover each other when viewed from above. The protective film application chamber 610 and the cleaning chamber 660 may have the same size and may completely cover each other when viewed from above. The baking chamber 620 and the post-exposure baking chamber 670 may have the same size and may completely cover each other when viewed from above.

[0090] Interface module 700 supplies substrate "W" between pre-exposure / post-exposure module 600 and exposure apparatus 1000. Interface module 700 has frame 710, first buffer 720, second buffer 730, and interface robot 740. First buffer 720, second buffer 730, and interface robot 740 are positioned within frame 710. First buffer 720 and second buffer 730 are spaced apart from each other by a predetermined distance and can be stacked. First buffer 720 is positioned above second buffer 730. First buffer 720 is positioned at a height corresponding to pre-processing module 601, and second buffer 730 is positioned at a height corresponding to post-processing module 602. When viewed from above, first buffer 720 is arranged in a row with transfer chamber 630 of pre-processing module 601 along a first direction 12, and second buffer 730 is arranged in a row with transfer chamber 630 of post-processing module 602 along the first direction 12.

[0091] The interface robot 740 is positioned spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 transfers the substrate "W" between the first buffer 720, the second buffer 730 and the exposure apparatus 1000. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

[0092] The first buffer 720 temporarily holds the substrate "W" before it is moved to the exposure apparatus 1000, on which the preprocessing module 601 has already performed the process. The second buffer 730 temporarily holds the substrate "W" before it is moved to the postprocessing module 602, on which the exposure apparatus 1000 has already fully performed the process. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and spaced apart from each other along a third direction 16. A substrate "W" is located on each of the supports 722. The housing 721 has openings (not shown) on the side where the interface robot 740 is provided and on the side where the preprocessing robot 632 is provided, such that the interface robot 740 and the preprocessing robot 632 load or unload the substrate "W" into or out of the supports 722. The second buffer 730 has a structure substantially similar to that of the first buffer 720. Meanwhile, the housing 4531 of the second buffer 730 has openings on the side where the interface robot 740 is located and on the side where the post-processing robot 682 is located. Without a chamber for performing a process on the wafer, the interface module can simply consist of the buffer and the robot as described above.

[0093] Figure 5This is a view showing a treatment solution supply device that supplies treatment solution to the resist application chamber.

[0094] Although this embodiment describes a processing solution supply device 900 supplying a processing solution for a deposition process to a resist application chamber, the inventive concept is not limited thereto and can be applied to all solution processing devices that process a substrate surface using a processing solution. The resist application chamber can supply a processing solution to a solution processing device 800, which performs processes such as pre-wetting the substrate with a diluent composition, applying photoresist, and cleaning the substrate edges with a diluent composition. Each solution processing device 800 may include a substrate support unit 810, a processing container 820, and a nozzle 830.

[0095] Reference Figure 5 The processing solution supply device 900 may include: a bottle 910 in which the processing solution is stored; a degassing device 920; a pump unit 990; and a supply pipeline 992.

[0096] Bottle 910 is filled with a treatment solution, and a first inert gas supply line 912 and a first supply line L1 are connected to bottle 910. Inert gas (helium or nitrogen) is supplied to bottle 910 via the first inert gas supply line 912 through a regulator to create an inert gas atmosphere inside the sealed interior of bottle 910, and the treatment solution inside bottle 910 flows under relative pressure through the first supply line L1 to the degassing device 920. The treatment solution may be a diluent composition used for pre-wetting and cleaning processes.

[0097] Dissolved gases in the treatment solution can be separated and removed in the degassing unit 920. A second supply line L2 is connected to the degassing unit 920. The second supply line L2 is also connected to the pump unit 990. A discharge line 924 is connected to the degassing unit 920 and is the line through which the bubbles separated in the degassing unit 920 are discharged.

[0098] Pump unit 990 can supply the treatment solution (from which dissolved gases have been removed) stored in degassing unit 920 to nozzle 830 of solution treatment device via the flow pressure generated by the suction / discharge operation. A third supply line L3 is connected to pump unit 990. The third supply line L3 can be connected to nozzle 830 of solution treatment device.

[0099] The supply line 992 may include a first supply line L1, a second supply line L2, and a third supply line L3.

[0100] Figure 6 It shows Figure 5 A three-dimensional view of the degassing device shown. Figure 7 It shows Figure 6 The cross-sectional view of the degassing device shown. Figure 8 This is a view showing the dissolved gas extraction nozzle.

[0101] refer to Figures 5 to 8 The degassing device 920 is an apparatus for separating and removing dissolved gases from a treatment solution. For example, the degassing device 920 may include a dissolved gas extraction nozzle 930, a first tank 940, and a second tank 960.

[0102] The dissolved gas extraction nozzle 930 is a nozzle that extracts dissolved gas from the treatment solution in the form of expellable air bubbles. The dissolved gas extraction nozzle 930 can be installed near the end (first supply port) of the first tank 940 via a connecting pipe 931.

[0103] The dissolved gas extraction nozzle 930 employs cavitation by reducing the cross-section of the outlet 935 to be smaller than the cross-section of the intermediate channel 934 to increase the flow rate and generate a pressure below the vapor pressure (a phenomenon in which bubbles are generated due to the rapid pressure drop of dissolved gases dissolved in the treatment solution). As the treatment solution is discharged from the outlet, the dissolved gas extraction nozzle extracts dissolved gases from the treatment solution in the form of bubbles through cavitation.

[0104] The dissolved gas extraction nozzle 930 includes a nozzle body 932. An inlet 933 is located at the upper end of the nozzle body 932, and an outlet 935 is located at the lower end of the nozzle body 932. An intermediate channel 934 is located between the inlet 933 and the outlet 935.

[0105] More specifically, the treatment solution is discharged through outlet 935 via intermediate channel 934. When the treatment solution reaches outlet 935, its flow rate increases, its dynamic pressure increases rapidly, and its static pressure decreases rapidly. Conversely, as the treatment solution passes through outlet 935, its flow rate decreases, and due to the widening of the channel cross-section, its dynamic pressure drops sharply, while its static pressure increases sharply. This rapid pressure change causes cavitation, and dissolved gases in the treatment solution are separated from it as bubbles. These bubbles, extracted through the dissolved gas extraction nozzle, along with the treatment solution, are then introduced into the first tank.

[0106] In this way, the degassing device 920 extracts dissolved gas in the form of bubbles by using the cavitation phenomenon in the dissolved gas extraction nozzle 930, and can be used semi-permanently without incurring separate maintenance costs.

[0107] The first tank 940 is used to separate and remove extracted bubbles from the treatment solution when bubbles pass through the dissolved gas extraction nozzle 930. According to one embodiment, the first tank 940 may include a double cylindrical structure comprising an inner housing (hereinafter, the first housing) 942 and an outer housing (hereinafter, the second housing) 946.

[0108] The first tank 940 has a first supply port 941 through which the treatment solution and bubbles are introduced. For example... Figure 7 As shown, the first supply port 941 can be directly connected to the outlet 935 of the dissolved gas extraction nozzle 930.

[0109] The first chamber 942 can be divided into an upper space A1 and a lower space A2 by a horizontal partition wall 943. The upper space A1 is connected to a first supply port 941. The degassed chemicals are stored in the lower space A2. The treatment solution and bubbles in the upper space A1 flow through a first flow channel 944 to the outer space A3 of the second chamber 946. The first flow channel 944 is formed on a cylindrical partition wall corresponding to the main body of the first chamber 942. Secondary cavitation may occur when the treatment solution flows to the outer space through the first flow channel.

[0110] The first housing 942 has a second flow channel 945 for the flow of chemicals between the outer space A3 and the lower space A2. The second flow channel 945 may be located at the lower end of the first housing 942. The second flow channel 945 may have a hemispherical shape.

[0111] The second chamber 946 has a cylindrical shape surrounding the first chamber 942. An outer space A3 is formed between the first chamber 942 and the second chamber 946. The treatment solution and bubbles are separated in the outer space A3. The bubbles flow to the upper part of the outer space A3, and the treatment solution flows downward to the lower part of the outer space A3 and accumulates in the outer space A3 and the lower space A2. A first outlet 947 is configured to connect the upper end of the second chamber 946 and the outer space A3. The bubbles separated from the chemicals in the outer space A3 are discharged through the first outlet 947. A discharge line 924 is connected to the first outlet 947. Discharge pressure (or negative pressure or vacuum pressure) can be supplied to the discharge line 924.

[0112] Meanwhile, in the second housing 946, a baffle 948 is installed at the upper part of the outer space A3. The baffle 948 is configured to prevent chemicals introduced into the outer space A3 through the first flow channel 944 from being introduced into the first discharge outlet 947. The baffle 948 can be installed horizontally in the outer space. The baffle 948 is positioned above the first flow channel 944.

[0113] The treatment solution, from which air bubbles have been removed in the first tank 940, is stored in the outer space A3 and the lower space A2, and then stored in the stabilization space A4 of the second tank 960 via a connecting pipe 928. The connecting pipe 928 is connected to the first discharge port 949 of the first tank 940 and the second supply port 961 of the second tank 960.

[0114] The second tank 960 is cylindrical and provides a stabilization space A4 in which chemicals, in which bubbles have been separated from the chemicals in the first tank 940, are stabilized. A second supply port 961 is located at the lower end of the second tank 960, connected to a first discharge port 949 via a connecting pipe 928 and a treatment solution (from which bubbles have been separated). A second discharge port 967 is located at the upper end of the second tank 960, through which bubbles separated from the treatment solution stabilized in the stabilization space A4 are discharged. The treatment solution stored in the stabilization space A4 is discharged through the second discharge port 969 located at the lower end of the second tank 960. A second supply line L2 is connected to the second discharge port 969. The treatment solution supplied to the second tank can be discharged after a stabilization period.

[0115] Simultaneously, each of the first tank 940 and the second tank 960 has a compression port through which compressed air is supplied for compressing the interior of the first tank 940 and the second tank 960, and a compression line 926 can be connected to the compression port. When the processing solution stored in the internal space needs to be evacuated to maintain the tank, the interior of the first tank and the second tank are compressed.

[0116] According to the degassing device 920 with the above configuration, dissolved gas is extracted in the dissolved gas extraction nozzle 930, bubbles are separated and removed in the first tank 940, and the treated solution from which the bubbles have been removed is stabilized in the second tank 960. Specifically, the degassing device 920 includes the first tank 940 and the second tank 960 without flow limitation, and therefore can be located at the front end (supply section) of the pump unit 990 instead of at the front end of the nozzle. Therefore, compared to conventional techniques that separately install the degassing device in the supply line connected to the nozzle, space and cost can be reduced.

[0117] Figure 9 This is a view showing a first modified example of the degassing device.

[0118] Figure 9 The degassing device 920a shown includes a dissolved gas extraction nozzle 930a, a first tank 940a, and a second tank (not shown). The configuration and function of the dissolved gas extraction nozzle 930a, the first tank 940a, and the second tank are basically similar. Figure 7The configuration and function of the dissolved gas extraction nozzle 930, the first tank 940, and the second tank 960 shown are as described below. Therefore, the following description will mainly refer to the differences from this embodiment.

[0119] In a modified example, the dissolved gas extraction nozzle 930a can be installed such that the outlet 935 is directly connected to the first supply port 941 of the first tank 940a.

[0120] Figure 10 This is a view showing a second modified example of the degassing device.

[0121] Figure 10 The degassing device 920b shown includes a dissolved gas extraction nozzle 930b, a first tank 940b, and a second tank 960b. The configuration and function of the dissolved gas extraction nozzle 930b, the first tank 940b, and the second tank 960b are basically similar. Figure 7 The configuration and function of the dissolved gas extraction nozzle 930, the first tank 940, and the second tank 960 shown are as described below. Therefore, the following description will mainly refer to the differences from this embodiment.

[0122] In a modified example, a level sensor 952 may be mounted on one side of the first tank 940b to detect the level of the treatment solution, thereby managing the treatment solution so that the level of the treatment solution can be continuously filled to the appropriate level "H". As an embodiment, the first tank 940b may include a level indicator tube 950 communicating with the external space A3; and a level sensor 952 located on one side of the level indicator tube 950 to measure the level of the treatment solution. Four level sensors 952 may be positioned at four locations to measure four levels: HH, "H", "L", and LL.

[0123] According to an embodiment of the invention, since the degassing device includes a first tank and a second tank, the flow rate is not limited by the flow rate itself. Therefore, it can be located at the front end of the pump unit (supply unit) instead of at the front end of the nozzle. Thus, compared to conventional techniques that separately install the degassing device in the supply line connected to the nozzle, space and cost can be reduced.

[0124] According to the embodiments of the present invention, since dissolved gas is extracted in the form of bubbles by using cavitation in the dissolved gas extraction nozzle, the dissolved gas extraction nozzle can be used semi-permanently without incurring separate maintenance costs.

[0125] According to embodiments of the present invention, dissolved gases in the treatment solution can be effectively extracted for separation and removal.

[0126] According to the embodiments conceived in this invention, sufficient flow can be supplied.

[0127] The effects of this invention are not limited to those described above. Those skilled in the art will clearly understand from the specification and accompanying drawings any effects not mentioned.

[0128] It is worth noting that the above-described embodiments are suggested for understanding the inventive concept and do not limit its scope; different modified embodiments also fall within the scope of the inventive concept. It should be understood that the technical protection scope of the inventive concept must be determined by the technical spirit of the claims. The technical protection scope of the inventive concept is not limited to the literal meaning of the claims, but may even encompass equivalent inventions.

Claims

1. A degassing device installed on a processing solution supply line, the degassing device comprising: A dissolved gas extraction nozzle, the dissolved gas extraction nozzle being configured to extract the dissolved gas in the form of bubbles from a treatment solution containing dissolved gas; and The first tank is configured to separate the extracted bubbles from the treatment solution as they pass through the dissolved gas extraction nozzle. The first tank includes: A first supply port is located at the upper end of the first tank, through which the treatment solution and the bubbles are introduced; A first housing, the first housing having an upper space connected to the first supply port; A second chamber, configured to surround the first chamber and having an outer space in which the treatment solution and the bubbles introduced from the upper space are separated between the first chamber and the second chamber; and A first outlet is located at the upper end of the outer space, through which the bubbles separated from the treatment solution are discharged from the outer space.

2. The degassing device according to claim 1, wherein, The dissolved gas extraction nozzle is configured such that the diameter of the intermediate channel connecting the inlet and outlet of the dissolved gas extraction nozzle is greater than the diameter of the inlet and the diameter of the outlet.

3. The degassing device according to claim 1, wherein, The dissolved gas extraction nozzle includes: The body comprises: a central channel through which the treatment solution flows; an inlet on one side of the central channel through which the treatment solution is introduced; and an outlet on the opposite side of the central channel through which the treatment solution is discharged. Wherein, the cross-section of the outlet is smaller than the cross-section of the intermediate channel, so that the dissolved gas in the treatment solution is extracted in the form of bubbles through cavitation.

4. The degassing device according to claim 1, wherein, The first housing includes: A first flow channel through which the treatment solution and the bubbles flow from the upper space to the outer space; A lower space, separated from the upper space by a horizontal partition wall, wherein the treatment solution, from which the air bubbles have been removed, is stored from the outer space; and The second flow channel through which the treatment solution flows between the outer space and the lower space is located at the lower end of the vertical partition wall separating the lower space and the outer space.

5. The degassing device according to claim 1, wherein, The first can also include: The first discharge port discharges the treatment solution from the lower space through the first discharge port, and The second enclosure also includes: A baffle is installed horizontally in the outer space so that the treatment solution introduced into the outer space through the first flow channel is not introduced into the first discharge port.

6. The degassing device according to claim 1, further comprising: The second tank has a stabilization space in which the treatment solution is stored and stabilized from the first tank, and the bubbles have been separated from the treatment solution.

7. The degassing device according to claim 6, wherein, The second can includes: A second supply port is located at the lower end of the second tank, and the treatment solution is introduced from the first tank through the second supply port, from which the bubbles have been separated; A second outlet, located at the upper end of the second tank, is used to discharge bubbles separated from the treatment solution stabilized in the stabilization space; and A second discharge port is located at the lower end of the second tank, through which the treatment solution stored in the stabilization space is discharged.

8. A degassing device installed on a processing solution supply line, the degassing device comprising: A dissolved gas extraction nozzle, the dissolved gas extraction nozzle being configured to extract the dissolved gas in the form of bubbles from a treatment solution containing dissolved gas; A first tank, configured to separate the extracted bubbles from the treatment solution as they pass through the dissolved gas extraction nozzle; and A second tank, having a stabilization space, in which the treatment solution, from the first tank, is stored and stabilized, and the bubbles have been separated from the treatment solution. The dissolved gas extraction nozzle is configured such that the diameter of the outlet is smaller than the diameter of the intermediate channel connecting the inlet and outlet of the dissolved gas extraction nozzle, so that the dissolved gas in the treatment solution is extracted in the form of bubbles through cavitation.

9. The degassing device according to claim 8, wherein, The first tank includes: A first supply port is located at the upper end of the first tank, through which the treatment solution and the bubbles are introduced; A first housing having: an upper space connected to the first supply port; and a lower space in which the treatment solution, from which the air bubbles have been removed, is stored from the outer space. A second chamber, configured to surround the first chamber, and having the outer space in which the treatment solution and the bubbles introduced from the upper space are separated between the first chamber and the second chamber; A first outlet, located at the upper end of the outer space, through which the bubbles separated from the treatment solution are discharged from the outer space; and A first discharge port is located at the lower end of the outer space, and the treatment solution stored in the lower space is discharged through the first discharge port. The first housing includes: A first flow channel through which the treatment solution and the bubbles flow from the upper space to the outer space; and The second flow channel through which the treatment solution flows between the outer space and the lower space is located at the lower end of the vertical partition wall separating the lower space.

10. The degassing device according to claim 9, wherein, The second enclosure also includes: A baffle is installed horizontally in the outer space so that the treatment solution introduced into the outer space through the first flow channel is not introduced into the first discharge port.

11. The degassing device according to claim 9, wherein, The second can includes: The second supply port is located at the lower end of the second tank and is connected to the first discharge port via a connecting pipe. The treatment solution is introduced through the second supply port, and the bubbles have been separated from the treatment solution. A second outlet, located at the upper end of the second tank, discharges the bubbles separated from the treatment solution stabilized in the stabilization space through the second outlet; and A second discharge port is located at the lower end of the second tank, through which the treatment solution stored in the stabilization space is discharged.

12. A substrate processing apparatus, comprising: A processing apparatus configured to process a substrate using a processing solution; and A processing solution supply unit is configured to supply the processing solution to the nozzle of the processing device. The processing solution supply unit includes: The treatment solution is stored in the bottle; A degassing device having a dissolved gas extraction nozzle configured to extract dissolved gas in the form of bubbles from the treatment solution received from the bottle; and A pump, configured to supply the treatment solution stored in the degassing device to the nozzle of the treatment device, from which the dissolved gas has been separated, The degassing device includes: The first tank is configured to separate extracted bubbles from the treatment solution as it passes through the dissolved gas extraction nozzle; A second tank, having a stabilization space, stores and stabilizes the treatment solution in which the bubbles have been separated from the treatment solution in the first tank; and A connecting pipe is provided, which connects the lower end of the first tank and the lower end of the second tank.

13. The substrate processing apparatus according to claim 12, wherein, The dissolved gas extraction nozzle is configured such that the diameter of the intermediate channel connecting the inlet and outlet of the dissolved gas extraction nozzle is greater than the diameter of the inlet and the diameter of the outlet.

14. The substrate processing apparatus according to claim 12, wherein, The first tank includes: A first supply port is located at the upper end of the first tank, through which the treatment solution and the bubbles are introduced; A first housing having: an upper space connected to the first supply port; and a lower space in which the treatment solution, from which the air bubbles have been removed, is stored from the outer space. A second chamber, configured to surround the first chamber, and having the outer space in which the treatment solution and the bubbles introduced from the upper space are separated between the first chamber and the second chamber; and A first outlet, located at the upper end of the outer space, through which the bubbles separated from the treatment solution are discharged from the outer space. The first housing includes: A first flow channel through which the treatment solution and the bubbles flow from the upper space to the outer space; and The second flow channel through which the treatment solution flows between the outer space and the lower space is located at the lower end of the vertical partition wall separating the lower space.

15. The substrate processing apparatus according to claim 14, wherein, The first can also include: The first discharge port discharges the treatment solution from the lower space through the first discharge port, and The second housing also includes: A baffle is installed horizontally in the outer space so that the treatment solution introduced into the outer space through the first flow channel is not introduced into the first discharge port.

16. The substrate processing apparatus according to claim 12, wherein, The second can includes: A second supply port is located at the lower end of the second tank, and the treatment solution is introduced from the first tank through the second supply port, from which the bubbles have been separated; A second outlet, located at the upper end of the second tank, discharges the bubbles separated from the treatment solution stabilized in the stabilization space through the second outlet; and A second discharge port is located at the lower end of the second tank, through which the treatment solution stored in the stabilization space is discharged.

17. A method for degassing a treatment solution, the method comprising: The dissolved gas is extracted in the form of bubbles from the treatment solution containing the dissolved gas through a dissolved gas extraction nozzle; The bubbles extracted from the first tank are separated from the treatment solution; and Stabilization is performed by receiving the treatment solution and storing it in a second tank, where the bubbles have already been separated from the treatment solution in the first tank. The first tank includes: A first supply port is located at the upper end of the first tank, through which the treatment solution and the bubbles are introduced; A first housing, the first housing having an upper space connected to the first supply port; A second chamber, configured to surround the first chamber and having an outer space in which the treatment solution and the bubbles introduced from the upper space are separated between the first chamber and the second chamber; and A first outlet is located at the upper end of the outer space, through which the bubbles separated from the treatment solution are discharged from the outer space.

18. The method according to claim 17, wherein, In the extraction of dissolved gas, the dissolved gas in the treatment solution is extracted in the form of bubbles through cavitation.

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