Method for manufacturing a metal structure

Abstract

A method for manufacturing a metal structure includes forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal piece; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process on the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal piece includes a first portion and a second portion, the first portion is disposed between the patterned seed layer and the second portion, and a width of the first portion is greater than a width of the second portion.

Description

[0001] Cross-references to related citations

[0002] This application claims priority to Chinese patent application No. 202010961983.0 filed on September 14, 2020, the disclosure of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a method for manufacturing a metal structure, and in particular to a method for manufacturing a metal structure by utilizing a seed layer. Background Art

[0004] Electronic devices are widely used in daily life and have become an indispensable necessity in modern society. These devices contain numerous circuits, often made of metal. However, defining the patterns of these circuits traditionally involves patterning processes such as exposure, development, and etching. This results in a lengthy process and requires a large amount of material, resulting in high overall production costs and low efficiency. Therefore, the industry continues to strive to shorten process times and reduce material usage to lower production costs and improve efficiency. Summary of the Invention

[0005] One embodiment of the present invention provides a method for manufacturing a metal structure, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal part; forming a first patterned photoresist layer on the seed layer, wherein the thickness of the first patterned photoresist layer is less than the thickness of the patterned metal layer; and performing a first patterning process on the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal part includes a first portion and a second portion, the first portion is arranged between the patterned seed layer and the second portion, and the width of the first portion is greater than the width of the second portion.

[0006] Among them, preferably, the first part of the metal part includes a first side, the second part of the metal part includes a second side, and there is a spacing between the first side and the second side, wherein a ratio of the spacing to a thickness of the seed layer is greater than or equal to 1.1 and less than or equal to 3.

[0007] Preferably, a thickness of the first portion of the metal component is the same as the thickness of the first patterned photoresist layer.

[0008] Preferably, the first patterned photoresist layer contacts a portion of a side surface of the metal component.

[0009] Preferably, the method further includes forming a release layer on the substrate, and the release layer is disposed between the substrate and the seed layer.

[0010] Preferably, the thickness of the first patterned photoresist layer is greater than or equal to 1 micron and less than or equal to 2 microns.

[0011] Preferably, after the first patterning process, the patterned seed layer includes a metal pattern, and a width of the metal pattern is greater than the width of the first portion of the metal component.

[0012] Preferably, the method further includes performing a second patterning process on the patterned seed layer. After the second patterning process, the patterned seed layer includes a metal pattern, and a width of the metal pattern is the same as the width of the first portion of the metal part.

[0013] Wherein, preferably, the step of forming the patterned metal layer on the seed layer includes:

[0014] forming a second patterned photoresist layer on the seed layer, wherein the second patterned photoresist layer includes a groove; and

[0015] The metal piece of the patterned metal layer is formed in the groove of the second patterned photoresist layer.

[0016] Preferably, the thickness of the first patterned photoresist layer is smaller than the thickness of the second patterned photoresist layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 FIG. 1 is a schematic cross-sectional view of a metal structure according to an embodiment of the present invention.

[0018] Figure 2 Shown Figure 1 Schematic diagram of the metal structure from above.

[0019] Figures 3 to 6 Schematic diagram of a method for manufacturing a metal structure according to some embodiments of the present invention is shown.

[0020] Figure 7 Shown Figure 1 Flow chart of the steps of the method for manufacturing a metal structure.

[0021] Figures 8 and 9 Shown is the formation Figure 1 Schematic diagram of the steps followed by the metal structure.

[0022] Figures 10 to 12 Schematic diagram of a method for manufacturing a metal structure according to some embodiments of the present invention is shown.

[0023] Figures 13 to 15Schematic diagram of a method for manufacturing a metal structure according to some embodiments of the present invention is shown.

[0024] The description of the accompanying drawings is as follows:

[0025] 10 Metal Structure

[0026] 100 substrates

[0027] 102 release layer

[0028] 104 Patterned seed layer

[0029] 1041, 1043, 1045, 1101, 1103, 1105 openings

[0030] 104P, 104Q metal pattern

[0031] 104U seed layer

[0032] 106 patterned metal layer

[0033] 1061 Metal Parts

[0034] 1061S, 1061R parts

[0035] 108, 110 patterned photoresist layer

[0036] 1081, 1083, 114R grooves

[0037] 112, 116 Patterning Process

[0038] 114 insulation layer

[0039] P1 Part 1

[0040] P2 Part 2

[0041] S1 First side

[0042] Steps S100-S106, S801-S802, S1101-S1102

[0043] S2 Second side

[0044] S3 surface

[0045] SP spacing

[0046] Ta, T1, T2, T3, T4 thickness

[0047] V direction

[0048] W1, W2, W3, W4 width DETAILED DESCRIPTION

[0049] The present invention will be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, to facilitate understanding by those skilled in the art and to simplify the drawings, the various figures herein depict only portions of the device, and certain components in the figures are not drawn to scale. Furthermore, the number and dimensions of components in the figures are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0050] Throughout the present specification and the appended claims, certain terms are used to refer to specific components. Those skilled in the art will appreciate that electronic device manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following specification and claims, words such as "including" and "comprising" are open-ended and should be interpreted as meaning "including, but not limited to..."

[0051] It should be understood that when an element or film layer is referred to as being "on," "disposed on," or "connected to" another element or film layer, it can be directly on or directly connected to the other element or layer, or there may be intervening elements or layers between the two (indirect case). Conversely, when an element is referred to as being "directly on," "disposed directly on," or "directly connected to" another element or film layer, there are no intervening elements or layers between the two.

[0052] While the terms "first," "second," "third," etc. may be used to describe various components, these terms are not intended to be limiting. These terms are used solely to distinguish a single component from other components within the specification. Claims may not use the same terms, but may be replaced with "first," "second," "third," etc., according to the order in which the components are declared in the claims. Thus, in the following description, the first component may be referred to as the second component in a claim.

[0053] In the present invention, the length, thickness, and width can be measured using an optical microscope, and the thickness can be measured using cross-sectional images obtained through an electron microscope, but the present invention is not limited thereto. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error.

[0054] The terms "approximately," "equal to," "equal to," "the same as," "substantially," or "approximately" as used herein generally represent values ​​falling within 15% of a given value or range, or values ​​falling within 5%, 3%, 2%, 1%, or 0.5% of a given value or range. In addition, the phrases "a given range is from a first value to a second value," and "a given range falls within the range from a first value to a second value" indicate that the given range includes the first value, the second value, and other values ​​therebetween.

[0055] It should be noted that the following embodiments may replace, reorganize, or mix the technical features of several different embodiments to complete other embodiments without departing from the spirit of the present invention.

[0056] The metal structure fabrication method of the present invention can be used to form conductive lines, circuits, or other metal components within an electronic device, but is not limited thereto. In some embodiments, the metal structure fabrication method can also be used to form marks, such as alignment marks, but is not limited thereto. The electronic device may include, but is not limited to, a display device, an antenna device, a touch display, a curved display, or a free-form display. Furthermore, the electronic device may be a bendable or flexible electronic device.

[0057] The display device may include, for example, a light-emitting diode, liquid crystal, fluorescence, phosphor, other suitable display media, or a combination thereof, but is not limited thereto. The light-emitting diode may include, for example, an organic light-emitting diode (OLED), an inorganic light-emitting diode (LED), a sub-millimeter light-emitting diode (miniLED, mini-meter sized LED), a micro-light-emitting diode (micro-LED, micro-meter sized LED), a quantum dot (QDs) light-emitting diode (such as QLED, QDLED), other suitable light-emitting diodes, or any combination thereof, but is not limited thereto. In some embodiments, the display device may include, for example, a spliced ​​display device, but is not limited thereto.

[0058] The antenna device may be, for example, a liquid crystal antenna or other type of antenna, but is not limited thereto. The antenna device may include, for example, a spliced ​​antenna device, but is not limited thereto. It should be noted that the electronic device may also be any arrangement or combination of the aforementioned devices, but is not limited thereto. In addition, the electronic device may have a rectangular, circular, polygonal shape, a shape with curved edges, or other suitable shape. The electronic device may have peripheral systems such as a drive system, a control system, a light source system, a shelving system, etc. to support the display device, antenna device, or spliced ​​device.

[0059] Please refer to Figure 1 and Figure 2 , Figure 1 FIG. 1 is a schematic cross-sectional view of a metal structure according to an embodiment of the present invention. Figure 2 Shown Figure 1 A schematic top view of a metal structure in a direction V, wherein Figure 1 It corresponds to Figure 2 The cross-sectional structure along the section line AA' is shown in FIG. In some embodiments, the metal structure 10 may include a substrate 100, a release layer 102, a patterned seed layer 104, and a patterned metal layer 106, but is not limited thereto. The patterned seed layer 104 may be disposed on the substrate 100, and the release layer 102 may be disposed between the patterned seed layer 104 and the substrate 100. Furthermore, the patterned metal layer 106 may be disposed on the patterned seed layer 104.

[0060] The material of the substrate 100 may include glass, quartz, sapphire, polymer (such as polyimide (PI), polyethylene terephthalate (PET)) and / or other suitable materials to serve as a flexible substrate or a rigid substrate, but is not limited thereto. In some embodiments, the substrate 100 may be a carrier substrate for forming the patterned seed layer 104 and the patterned metal layer 106. In addition, in some embodiments, after the patterned metal layer 106 is formed, the patterned seed layer 104 and the patterned metal layer 106 may be separated from the substrate 100 through the release layer 102. The material of the release layer 102 may include parylene, organic silicone resin, or silicone oil, but is not limited thereto.

[0061] In some embodiments (such as Figure 1 and Figure 2), the patterned seed layer 104 may include an opening 1041, an opening 1043, and an opening 1045, but is not limited thereto. For example, the opening 1041, the opening 1043, and the opening 1045 may serve as alignment marks, and the alignment marks in the patterned seed layer 104 may be used to align with the alignment marks and / or corresponding positions in other film layers or components to reduce positional deviations between different components. The opening 1041, the opening 1043, and the opening 1045 may have the same or different patterns. For example (e.g. Figure 2 ), the opening 1041 may have a circular pattern, the opening 1043 may have a rectangular pattern, and the opening 1045 may have a cross pattern, but the present invention is not limited thereto. Figure 1 The thickness Ta of the patterned seed layer 104 may be approximately 0.2 microns, but is not limited thereto. Furthermore, the material of the patterned seed layer 104 may include, but is not limited to, silver, copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, indium, bismuth, alloys thereof, combinations thereof, or other metal materials with good electrical conductivity.

[0062] The patterned metal layer 106 may include one or more metal parts 1061, which may serve as wires, circuits, or other metal elements within an electronic device, but are not limited thereto. The metal part 1061 may include a first portion P1 and a second portion P2, wherein the first portion P1 may be disposed between the patterned seed layer 104 and the second portion P2, and the width W1 of the first portion P1 may be greater than the width W2 of the second portion P2. In addition, the metal part 1061 may include a stepped side having a step. For example, the first portion P1 of the metal part 1061 may include a first side S1, and the second portion P2 of the metal part 1061 may include a second side S2, wherein the first side S1 and the second side S2 are located on the same side, and the metal part 1061 may further include a surface S3, wherein the surface S3 may connect the first side S1 and the second side S2, and the surface S3 is not parallel to the first side S1 and the second side S2. Furthermore, a spacing SP may be formed between the first side surface S1 and the second side surface S2, wherein a ratio of the spacing SP to the thickness Ta of the patterned seed layer 104 may be greater than or equal to 1.1 and less than or equal to 3. Furthermore, the material of the patterned metal layer 106 may include, but is not limited to, silver, copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, iridium, rhodium, indium, bismuth, alloys thereof, combinations thereof, or other metal materials with good electrical conductivity.

[0063] For example, in some embodiments, when the metal structure 10 is used as a conductive line in a redistribution layer (RDL), an insulating layer (such as Figure 8 or Figure 11The insulating layer 114 in the embodiment covers the metal part 1061 (or the patterned metal layer 106). At this time, since the metal part 1061 of this embodiment includes a side with a step, the adhesion between the metal part 1061 and the insulating layer can be improved, thereby improving the reliability of the electronic device.

[0064] In addition, if Figure 1 The patterned seed layer 104 may further include one or more metal patterns 104P. The metal pattern 104P may be disposed between the first portion P1 of the metal component 1061 and the release layer 102 . The width W3 of the metal pattern 104P may be greater than the width W1 of the first portion P1 of the metal component 1061 .

[0065] The following will continue to introduce the method for manufacturing the metal structure 10 of this embodiment. Figures 3 to 6 , which is a schematic diagram of a method for manufacturing a metal structure according to some embodiments of the present invention. Figure 3 A substrate 100 is provided, and a release layer 102, a seed layer 104U, and a patterned photoresist layer 108 are sequentially formed on the substrate 100. First, the release layer 102 is formed on the substrate 100. For example, the release layer 102 can be fully coated on the surface of the substrate 100, but is not limited thereto.

[0066] Next, a seed layer 104U is formed on the substrate 100. Figure 3 A seed layer 104U can be formed on the release layer 102, such that the release layer 102 is disposed between the substrate 100 and the seed layer 104U. For example, the seed layer 104U can be formed entirely on the release layer 102 through a sputtering process, but this is not limited to this. In this embodiment, the thickness of the seed layer 104U can be approximately 0.2 microns, but this is not limited to this. Furthermore, the material of the seed layer 104U can be the same as that of the patterned seed layer 104, and will not be further described here.

[0067] Then, if Figures 3 and 4 , forming a patterned metal layer 106 on the seed layer 104U, which may include the following steps. Figure 3 A patterned photoresist layer 108 (or referred to as a second patterned photoresist layer) is formed on the seed layer 104U. The patterned photoresist layer 108 may include one or more grooves, such as groove 1081 and groove 1083. For example, the patterned photoresist layer 108 may be formed by first forming a photoresist layer entirely on the seed layer 104U, then exposing the photoresist layer through a photomask, and forming grooves 1081 and 1083 in the photoresist layer after development to obtain the patterned photoresist layer 108.

[0068] After the patterned photoresist layer 108 is formed, Figure 4As shown, the patterned metal layer 106 is formed in the groove 1081 and the groove 1083 of the patterned photoresist layer 108. For example, the patterned metal layer 106 can be formed in the groove 1081 and the groove 1083 of the patterned photoresist layer 108 by electroplating or chemical plating, but is not limited thereto. Figure 4 As shown, the patterned metal layer 106 may include a plurality of metal parts 1061 respectively located in the groove 1081 and the groove 1083, wherein the thickness T1 of the patterned photoresist layer 108 may be greater than the thickness T2 of the patterned metal layer 106 (or the metal part 1061). In addition, after the patterned metal layer 106 is formed, the metal parts 1061 may be removed. Figure 4 The patterned photoresist layer 108 is formed in the substrate.

[0069] Then, if Figure 5 As shown, a patterned photoresist layer 110 (or referred to as a first patterned photoresist layer) is formed on the seed layer 104U, and the patterned photoresist layer 110 may include one or more openings, such as an opening 1101, an opening 1103, and an opening 1105. For example, the formation of the patterned photoresist layer 110 may include the following steps: first, a photoresist layer is formed entirely on the seed layer 104U, then the photoresist layer is exposed through a photomask, and after development, the openings 1101, 1103, and 1105 are formed in the photoresist layer to obtain the patterned photoresist layer 110.

[0070] like Figure 5 As shown, by controlling the amount of photoresist material used, the thickness T3 of the patterned photoresist layer 110 can be smaller than the thickness T2 of the patterned metal layer 106 (or metal member 1061) and the thickness T1 of the patterned photoresist layer 108. In other words, Figure 5 The thickness T3 of the patterned photoresist layer 110 may be less than Figure 4 The thickness T1 of the patterned photoresist layer 108 is as follows. Figure 5 , the patterned photoresist layer 110 may contact a portion 1061R of the side surface of the metal member 1061, while another portion 1061S of the side surface and the top surface of the metal member 1061 may be exposed. For example, the thickness T3 of the patterned photoresist layer 110 may be greater than or equal to about 1 micron and less than or equal to about 2 microns, and Figure 4 The thickness T1 of the patterned photoresist layer 108 can be greater than or equal to approximately 2.1 microns and less than or equal to approximately 5 microns, but is not limited thereto. In the present invention, using a thinner photoresist layer to form the patterned photoresist layer 110 can save material, shorten exposure time, and reduce exposure energy, thereby reducing production costs and improving efficiency.

[0071] In addition, similar to Figure 2The openings 1041, 1043 and 1045 in the patterned photoresist layer 110 may also have the same or different patterns in the top view. Figure 2 , the opening 1101 may have a circular pattern, the opening 1103 may have a rectangular pattern, and the opening 1105 may have a cross pattern, but the present invention is not limited thereto.

[0072] Then, if Figure 6 As shown, through the patterned photoresist layer 110 Figure 5 The seed layer 104U is subjected to a patterning process 112 (or referred to as a first patterning process) to form a patterned seed layer 104, wherein the patterning process 112 may include an etching process, but is not limited thereto. The features of the patterned seed layer 104 have been Figure 1 、 Figure 2 As described in the relevant paragraphs, I will not repeat them here. Figure 5 Since the top surface and a portion 1061S of the side surface of the metal member 1061 may be exposed, when Figure 6 During the patterning process 112, Figure 5 The top surface and a portion 1061S of the side surface of the metal member 1061 in the patterned photoresist layer 110 will be etched, while the other portion 1061R of the side surface of the metal member 1061 covered by the patterned photoresist layer 110 will not be etched. Figure 6 ), the metal part 1061 may include a first portion P1 and a second portion P2, the first portion P1 may be arranged between the patterned seed layer 104 and the second portion P2, the width W1 of the first portion P1 is greater than the width W2 of the second portion P2, and the thickness T4 of the first portion P1 may be substantially the same as the thickness T3 of the patterned photoresist layer 110.

[0073] Therefore, after patterning process 112, metal member 1061 may include side surfaces with stepped portions. For example, first portion P1 of metal member 1061 may include first side surface S1, second portion P2 of metal member 1061 may include second side surface S2, and metal member 1061 may further include surface S3, which may connect first side surface S1 and second side surface S2, wherein first side surface S1 and second side surface S2 are located on the same side, and surface S3 is not parallel to first side surface S1 and second side surface S2. Furthermore, a ratio of spacing SP between first side surface S1 and second side surface S2 to a thickness Ta of patterned seed layer 104 may be greater than or equal to 1.1 and less than or equal to 3. Furthermore, a width W3 of metal pattern 104P of patterned seed layer 104 may be greater than width W1 of first portion P1 and width W2 of second portion P2 of metal member 1061.

[0074] Then, after the patterning process 112, the patterned photoresist layer 110 may be removed to obtain Figure 1 and Figure 2 The metal structure 10. In summary of the above steps, please refer to Figure 7 , which is shown as Figure 1 The manufacturing method of the metal structure 10 of the present invention may mainly include (but is not limited to) Figure 7 Steps shown:

[0075] Step S100: forming a seed layer 104U on the substrate 100;

[0076] Step S102 : forming a patterned metal layer 106 on the seed layer 104U, wherein the patterned metal layer 106 includes a metal member 1061 ;

[0077] Step S104 : forming a first patterned photoresist layer 110 on the seed layer 104U, wherein a thickness T3 of the first patterned photoresist layer 110 is less than a thickness T2 of the patterned metal layer 106 ; and

[0078] Step S106: The seed layer 104U is patterned through the first patterned photoresist layer 110 to form a patterned seed layer 104, wherein after the patterning process, the metal part 1061 includes a first portion P1 and a second portion P2, the first portion P1 is arranged between the patterned seed layer 104 and the second portion P2, and the width W1 of the first portion P1 is greater than the width W2 of the second portion P2.

[0079] It is to be understood that the steps shown in the method for making the metal structure 10 are not exhaustive and other steps may be performed before, after or between any of the steps shown. In addition, some steps may be performed in a different order. Figure 1 and Figure 2 After the metal structure 10 is formed, the method for manufacturing the metal structure of this embodiment may further include the following steps.

[0080] In the formation Figure 1 and Figure 2 After the metal structure 10, you can continue Figures 8 and 9 Please also refer to the steps in Figure 8 and Figure 1 , first of all, in Figure 1 An insulating layer 114 is formed on the substrate 100 (shown in FIG. Figure 8), and the insulating layer 114 may cover the patterned metal layer 106 (such as the metal part 1061) and the patterned seed layer 104 (such as the metal pattern 104P). In other words, the patterned metal layer 106 and the patterned seed layer 104 may be arranged between the release layer 102 and the insulating layer 114. The structure of the insulating layer 114 may be a single layer or a multilayer, but is not limited thereto. The material of the insulating layer 114 may include an organic insulating material, an inorganic insulating material, or a combination thereof, but is not limited thereto. In addition, since the metal part 1061 of this embodiment includes a side surface with a step, the adhesion between the metal part 1061 and the insulating layer 114 can be improved.

[0081] After forming the insulating layer 114, the step of removing the substrate 100 and the release layer 102 is performed. The removal step can remove the substrate 100 and the release layer 102 simultaneously, or can remove the substrate 100 and the release layer 102 separately. For example, the substrate 100 can be removed from the surface of the release layer 102. Figure 8 After removing the substrate 100, the release layer 102 may be removed from the surface of the insulating layer 114 (and / or the patterned seed layer 104). Figure 8 In step S802. In some embodiments (such as Figure 9 The step of removing the patterned seed layer 104 may be performed to obtain a structure including the patterned metal layer 106 and the insulating layer 114. The method of removing the patterned seed layer 104 may include an etching process, but is not limited thereto. In addition, after removing the patterned seed layer 104, a plurality of grooves 114R may be formed in the insulating layer 114. The positions of the grooves 114R may correspond to the positions of the patterned metal layer 106 and the insulating layer 114. Figure 8 The position of the patterned seed layer 104 is shown in FIG.

[0082] In some embodiments, after forming the insulating layer 114, the steps of forming a second patterned metal layer (not shown) and a second insulating layer (not shown) may also be performed. Of course, depending on product requirements, the steps of forming a third patterned metal layer (not shown) and a third insulating layer (not shown) may also be performed, and so on to increase the appropriate number of patterned metal layers and insulating layers. After completing the required number of patterned metal layers and insulating layers, the above-mentioned step of removing the substrate 100 and the release layer 102 is continued. The method for manufacturing the metal structure of the present invention is not limited to the above-mentioned embodiments. The following will continue to disclose some embodiments of the present invention. However, in order to simplify the description and highlight the differences between the embodiments, the same reference numerals are used to mark the same elements below, and the repeated parts will not be repeated.

[0083] Please refer to Figures 10 to 12 , which is a schematic diagram of a method for manufacturing a metal structure in some embodiments of the present invention. In this embodiment, the metal structure of the embodiment described above can be Figures 3 to 6 The steps in Figure 1 structure, and then proceed Figures 10 to 12 Steps. Figure 10 , after completing Figure 1 After the metal structure 10 in Figure 1 The patterned seed layer 104 in the embodiment of the present invention is subjected to a patterning process 116 (shown in FIG. Figure 10 ) to remove the portion of the patterned seed layer 104 not covered by the patterned metal layer 106 (or metal member 1061). For example, the patterning process 116 (or also referred to as the second patterning process) may include an etching process, but is not limited thereto. After the patterning process 116, the patterned seed layer 104 may include a metal pattern 104Q, and the width W4 of the metal pattern 104Q may be substantially the same as the width W1 of the first portion P1 of the metal member 1061.

[0084] Next, please also refer to Figure 10 and Figure 11 ,exist Figure 10 An insulating layer 114 is formed on the substrate 100 (shown in FIG. Figure 11 ), and the insulating layer 114 may cover the patterned metal layer 106 (such as the metal member 1061 ) and the patterned seed layer 104 (such as the metal pattern 104Q). In other words, the patterned metal layer 106 and the patterned seed layer 104 may be disposed between the release layer 102 and the insulating layer 114 .

[0085] After forming the insulating layer 114, the step of removing the substrate 100 and the release layer 102 is performed. The removal step can remove the substrate 100 and the release layer 102 simultaneously, or can remove the substrate 100 and the release layer 102 separately. For example, the substrate 100 can be removed from the surface of the release layer 102. Figure 11 After removing the substrate 100, the release layer 102 may be removed from the surface of the insulating layer 114 (and / or the patterned seed layer 104). Figure 11 After the substrate 100 and the release layer 102 are removed, a structure including a patterned seed layer 104 (such as the metal pattern 104Q), a patterned metal layer 106 (such as the metal member 1061) and an insulating layer 114 can be obtained. Figure 12 shown.

[0086] In some embodiments, after forming the insulating layer 114, a second patterned metal layer (not shown) and a second insulating layer (not shown) may be formed. Depending on product requirements, a third patterned metal layer (not shown) and a third insulating layer (not shown) may also be formed, and the number of patterned metal layers and insulating layers may be increased accordingly. After the desired number of patterned metal layers and insulating layers is completed, the aforementioned steps of removing the substrate 100 and release layer 102 are continued.

[0087] above Figures 1 to 6 The metal structure and its manufacturing method can be applied to the process of packaging components, for example, it can be applied to the structure and its manufacturing method of redistribution layer first (RDL first), but the present invention is not limited to this. Figures 13 to 15 , which is a schematic diagram of a method for manufacturing a metal structure according to some embodiments of the present invention, wherein Figures 13 to 15 The metal structure and its manufacturing method can be applied to chip-first structure and its manufacturing method, wherein the chip-first structure may include chip face up process and structure and chip face down process and structure, but is not limited thereto.

[0088] In the chip-first structure and its manufacturing method, Figures 13 to 15 The substrate 100 may be at least a portion of a silicon wafer, a system on chip (SOC), or a printed circuit board (PCB), but is not limited thereto. For example, the substrate 100 may include a wafer or a packaged wafer, but is not limited thereto.

[0089] like Figure 13 A seed layer 104U may be formed on the surface of the substrate 100, and a patterned metal layer 106 and a patterned photoresist layer 110 may be sequentially formed on the seed layer 104U. Details of forming the seed layer 104U, the patterned metal layer 106 and the patterned photoresist layer 110 may be referred to. Figures 3 to 5 In addition, compared to Figure 5 、 Figure 6 and Figure 1 structure, Figures 13 to 15 The structure may not include or form the release layer 102 on the side of the substrate 100 away from the seed layer 104U, but is not limited thereto. According to some embodiments, the substrate 100 may also be selectively disposed on a carrier substrate, and the release layer 102 may be disposed between the carrier substrate and the substrate 100.

[0090] Then, if Figure 14 As shown, through the patterned photoresist layer 110 Figure 13The seed layer 104U is subjected to a patterning process 112 to form a patterned seed layer 104. For example, the opening 1041, the opening 1043, and the opening 1045 may expose a portion of the surface of the substrate 100, but the invention is not limited thereto. The opening 1041, the opening 1043, and the opening 1045 may be, for example, a portion of a cutting line, but the invention is not limited thereto. The details of the patterning process 112 and the first portion P1 and the second portion P2 of the metal member 1061 may be referred to. Figure 6 Then, after the patterning process 112, the Figure 14 The patterned photoresist layer 110 in the embodiment of the present invention is Figure 15 In some embodiments, contacts may be disposed on the substrate 100 (eg, a wafer), and these contacts may be electrically connected to the metal pattern 104P of the patterned seed layer 104, but the present invention is not limited thereto.

[0091] although Figures 13 to 15 The structure may not include or form the release layer 102. However, in some embodiments, a release layer 102 may be formed between the substrate 100 and the seed layer 104U in the chip-first structure and the manufacturing method thereof, but is not limited thereto.

[0092] In summary, the metal structure fabrication method of the present invention utilizes a reduced-thickness photoresist layer when patterning the seed layer, saving material, shortening exposure time, and reducing exposure energy, thereby lowering manufacturing costs and improving efficiency. Furthermore, in the metal structure produced using the fabrication method of the present invention, the metal components include stepped side surfaces, which enhances adhesion between the metal components and the insulating layer, thereby increasing the reliability of the electronic device.

[0093] The foregoing description is merely an embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A method for manufacturing a metal structure, characterized in that: include: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer comprises a metal member; After forming the patterned metal layer, forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process on the seed layer through the first patterned photoresist layer to form a patterned seed layer, After the first patterning process, the metal component includes a first portion and a second portion, the first portion is disposed between the patterned seed layer and the second portion, and a width of the first portion is greater than a width of the second portion.

2. The method for manufacturing a metal structure according to claim 1, wherein: The first portion of the metal part includes a first side, the second portion of the metal part includes a second side, and a spacing is included between the first side and the second side, wherein a ratio of the spacing to a thickness of the seed layer is greater than or equal to 1.1 and less than or equal to 3.

3. The method for manufacturing a metal structure according to claim 1, wherein: A thickness of the first portion of the metal member is the same as the thickness of the first patterned photoresist layer.

4. The method for manufacturing a metal structure according to claim 1, wherein: The first patterned photoresist layer contacts a portion of a side surface of the metal component.

5. The method for manufacturing a metal structure according to claim 1, wherein: The method further includes forming a release layer on the substrate, wherein the release layer is disposed between the substrate and the seed layer.

6. The method for manufacturing a metal structure according to claim 1, wherein: The thickness of the first patterned photoresist layer is greater than or equal to 1 micron and less than or equal to 2 microns.

7. The method for manufacturing a metal structure according to claim 1, wherein: After the first patterning process, the patterned seed layer includes a metal pattern, and a width of the metal pattern is greater than the width of the first portion of the metal component.

8. The method for manufacturing a metal structure according to claim 1, wherein: The method further includes performing a second patterning process on the patterned seed layer. After the second patterning process, the patterned seed layer includes a metal pattern, and a width of the metal pattern is the same as the width of the first portion of the metal component.

9. The method for manufacturing a metal structure according to claim 1, wherein: The step of forming the patterned metal layer on the seed layer comprises: forming a second patterned photoresist layer on the seed layer, wherein the second patterned photoresist layer includes a groove; and The metal piece of the patterned metal layer is formed in the groove of the second patterned photoresist layer.

10. The method for manufacturing a metal structure according to claim 9, wherein: The thickness of the first patterned photoresist layer is smaller than the thickness of the second patterned photoresist layer.

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