A temperature measurement structure and method for chip hotspots

By setting up a thermopile temperature measurement unit on the front of the chip unit, combining the microfluidic heat dissipation unit and the cooling working fluid supply unit, the temperature and temperature difference values ​​of multiple hot spots are measured in real time, the problem of low temperature measurement accuracy in the prior art is solved, and the accurate evaluation of the microfluidic heat dissipation performance and real-time monitoring of the chip working state is achieved, and the accuracy and reliability of the temperature measurement method are improved.

CN114354008BActive Publication Date: 2025-05-30INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
View PDF 2 Cites 0 Cited by

Patent Information

Application Number
CN202210032049.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-01-12
Publication Date
2025-05-30
Estimated Expiration
2042-01-12

AI Technical Summary

Technical Problem

When measuring the hot spot temperature of the microfluidic heat dissipation chip, the existing temperature measurement methods have low accuracy, and it is impossible to achieve accurate evaluation of the microfluidic heat dissipation performance and real-time accurate monitoring of the chip's working status, resulting in a decrease in the accuracy and reliability of the temperature measurement method.

Method used

A thermopile temperature measurement unit is used, which is set on the front of the chip unit, combined with a microfluidic heat dissipation unit and a cooling fluid supply unit, and the temperature difference value of multiple hot spots is measured in real time, and the highest temperature value and maximum temperature difference value of the chip are determined to evaluate the performance parameters of the chip.

Benefits of technology

It realizes accurate evaluation of microfluidic heat dissipation performance and real-time accurate monitoring of chip working status, improves the accuracy and reliability of the temperature measurement method, and is suitable for high-temperature temperature measurement environments above 150℃.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN114354008B_ABST
    Figure CN114354008B_ABST
Patent Text Reader

Abstract

The present invention discloses a temperature measurement structure and method for chip hot spots, relating to the field of semiconductor package heat dissipation. The temperature measurement structure for chip hot spots includes: a thermopile temperature measurement unit, a chip unit, a microfluidic heat dissipation unit, and a cooling working fluid supply unit; the thermopile temperature measurement unit is arranged on one side of the chip unit, the microfluidic heat dissipation unit is located on the other side of the chip unit, and the cooling working fluid supply unit is located on the side of the microfluidic heat dissipation unit away from the chip unit; the thermopile temperature measurement unit determines the highest temperature value and the maximum temperature difference of multiple hot spots of the chip based on multiple real-time temperature values and multiple temperature differences, so as to determine the performance parameters of the chip based on the highest temperature value and the maximum temperature difference, realize the accurate evaluation of the microfluidic heat dissipation performance and the real-time and accurate monitoring of the chip working state, and also improve the accuracy and reliability of the temperature measurement method.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present invention relates to the field of heat dissipation of semiconductor packages, and particularly to a temperature measurement structure and method for chip hot spots. Background Art

[0002] With the development of semiconductor technology, the performance of semiconductor chips is constantly improving, and many electronic systems have high requirements for the temperature uniformity of multi-chips. The surface temperature and temperature uniformity of a microfluidic heat dissipation chip are closely related to the hot spot distribution and the design of the micro-structure. Different micro-structures will affect the flow uniformity of the cooling working medium, thereby causing different temperature uniformities of the chip. Among them, poor temperature uniformity will cause local high-temperature hot spots, resulting in a reduction in the reliability of the chip. Therefore, an effective temperature measurement method is needed to monitor the temperature and temperature uniformity of hot spots at different positions on the microfluidic heat dissipation chip, so as to prevent the influence of too high hot spot temperature and poor temperature uniformity between hot spots on the chip performance and reliability.

[0003] At present, the commonly used temperature measurement methods include non-contact infrared temperature measurement method, surface-mounted thermocouple temperature measurement method, and integrated temperature measurement diode or thermistor temperature measurement method. Among them, the temperature measured by the non-contact infrared temperature measurement method is the chip surface temperature. However, due to the differences in the chip surface materials and structures, the emissivity of the chip surface is different, so there is a large difference between the temperature information obtained by infrared temperature measurement and the actual chip temperature. When using the surface-mounted thermocouple method to measure temperature, due to the existence and differences of the thermal resistance of the interface materials of the surface-mounted thermocouple, there is a large deviation between the measured temperature and the actual chip temperature. Although the temperature measurement diode has the characteristics of high sensitivity and good linearity, since the maximum temperature of the diode (PN junction) cannot exceed 150 degrees Celsius, it cannot be applied to the temperature measurement environment with higher temperatures. And the diode is easily broken down by static electricity, and an internal electrostatic discharge circuit (ESD) needs to be built to protect the diode to prevent the diode from being broken down by static electricity, which further leads to a complex structure. When using the hot surface resistance to measure temperature, since the thermistor will be affected by self-heating, its resistance value changes with the increase of temperature, and it has a non-linear resistance-temperature property, resulting in low temperature measurement accuracy.

[0004] In summary, the current temperature measurement methods - due to temperature measurement environment limitations or low temperature measurement accuracy, cannot achieve accurate evaluation of microfluidic heat dissipation performance and real-time accurate monitoring of the chip working state, reducing the accuracy and reliability of the temperature measurement methods. Summary of the Invention

[0005] The purpose of the present invention is to provide a temperature measurement structure and method for chip hot spots, so as to solve the problems that the current temperature measurement methods have low temperature measurement accuracy, cannot achieve accurate evaluation of microfluidic heat dissipation performance and real-time accurate monitoring of the chip working state, and reduce the accuracy and reliability of the temperature measurement methods.

[0006] In a first aspect, the present invention provides a temperature measurement structure for chip hotspots. The temperature measurement structure for chip hotspots includes: a thermopile temperature measurement unit, a chip unit, a microfluidic heat dissipation unit, and a cooling working fluid supply unit; the thermopile temperature measurement unit is arranged on one side of the chip unit, the microfluidic heat dissipation unit is located on the other side of the chip unit, and the cooling working fluid supply unit is located on the side of the microfluidic heat dissipation unit away from the chip unit;

[0007] The cooling working fluid supply unit is configured to transport the heat of the chip under the flow of the cooling working fluid and reduce the temperatures of multiple hotspots on the chip with the microfluidic heat dissipation unit;

[0008] The thermopile temperature measurement unit is configured to determine the real-time temperature values of multiple hotspots and the temperature differences between every two of the multiple hotspots; based on the multiple real-time temperature values and the multiple temperature differences, determine the highest temperature value and the maximum temperature difference of the multiple hotspots of the chip, so as to determine the performance parameters of the chip based on the highest temperature value and the maximum temperature difference;

[0009] Wherein, the hotspot refers to a temperature change point that appears at the microscale inside the chip when the internal power distribution of the chip is uneven; the performance parameters include the working state parameters of the chip, the multi-point temperature uniformity parameters of the chip, and the heat dissipation performance parameters of the microfluidic heat dissipation unit.

[0010] In the case of adopting the above technical solution, the temperature measurement structure of the chip hot spot provided by the embodiment of the present application includes: a thermopile temperature measurement unit, a chip unit, a microfluidic heat dissipation unit, and a cooling working fluid supply unit; the thermopile temperature measurement unit is arranged on one side of the chip unit, the microfluidic heat dissipation unit is located on the other side of the chip unit, and the cooling working fluid supply unit is located on the side of the microfluidic heat dissipation unit away from the chip unit; the cooling working fluid supply unit is used to transport the heat of the chip under the flow of the cooling working fluid and reduce the temperatures of multiple hot spots on the chip with the microfluidic heat dissipation unit; the thermopile temperature measurement unit is used to determine the real-time temperature values of multiple hot spots and the temperature differences between every two of multiple hot spots; based on multiple real-time temperature values and multiple temperature differences, determine the highest temperature value and the maximum temperature difference of multiple hot spots of the chip, so as to determine the performance parameters of the chip based on the highest temperature value and the maximum temperature difference; compared with the traditional temperature measurement methods, such as compared with the infrared temperature measurement method, the present application arranges the thermopile temperature measurement unit on the front of the chip unit, realizes the in-situ temperature measurement, and avoids the influence of the external environment on the temperature measurement accuracy; compared with the surface-mounted thermocouple temperature measurement, it avoids the influence of the thermal interface material on the temperature measurement accuracy; compared with the temperature measurement diode, it can be applied to the high-temperature measurement environment above 150 °C and has a wide temperature measurement range; compared with the thermistor, using the thermopile temperature measurement unit for temperature measurement does not require an external excitation power supply, so it is not easy to generate heat by itself, ensuring the temperature measurement accuracy, that is, it can realize the accurate evaluation of the microfluidic heat dissipation performance and the real-time and accurate monitoring of the chip working state, and also improves the accuracy and reliability of the temperature measurement method.

[0011] In a possible implementation manner, the thermopile temperature measurement unit includes multiple groups of thermopile temperature measurement components corresponding to the number of hot spots, and each group of thermopile temperature measurement components includes a first-type thermopile; the chip unit includes a hot spot center region and a hot spot edge region, the first-type thermopile has a hot end and a cold end, the hot end of the first-type thermopile is connected to the chip unit in the hot spot center region, and the cold end of the first-type thermopile is connected to the chip unit in the hot spot edge region, so as to determine the maximum temperature difference between every two of multiple hot spots on the chip with the microfluidic heat dissipation unit.

[0012] In a possible implementation manner, the hot spot center region refers to the highest temperature region of the hot spot of the chip; the hot spot edge region refers to the lowest temperature region of the edge of the hot spot corresponding directly above the microfluidic heat dissipation unit.

[0013] In a possible implementation, each group of the thermopile temperature measurement components further includes a second-type thermopile connected to the first-type thermopile; the chip unit further includes a chip lowest temperature region, the second-type thermopile has a hot end and a cold end, the hot end of the second-type thermopile is connected to the chip unit in the hot spot center region, and the cold end of the second-type thermopile is connected to the chip unit in the chip lowest temperature region, so as to determine the highest temperature value of each hot spot on the chip with the microfluidic heat dissipation unit, and monitor the difference value of the maximum temperature difference between multiple highest temperature values based on the highest temperature value.

[0014] In a possible implementation, the chip lowest temperature region refers to the external region of the hot spot corresponding directly above the microfluidic heat dissipation unit.

[0015] In a possible implementation, the materials for preparing the hot end of the first-type thermopile and the cold end of the first-type thermopile are different.

[0016] In a possible implementation, the cooling working fluid supply unit includes: a cooling working fluid supply layer, and a cooling working fluid inlet and a cooling working fluid outlet formed on the cooling working fluid supply layer.

[0017] In a possible implementation, the thermopile temperature measurement unit is arranged at the positions of multiple hot spots in the chip unit, the microfluidic heat dissipation unit includes a microchannel cold plate, and a microchannel and a cooling working fluid distribution channel that are interconnected and arranged on the back of the microchannel cold plate; the microchannel is arranged on the microchannel cold plate corresponding to the orthographic projection of the multiple hot spots; there is an overlapping area between the orthographic projection of the cooling working fluid distribution channel on the cooling working fluid supply layer and the orthographic projection of the cooling working fluid inlet on the cooling working fluid supply layer; there is an overlapping area between the orthographic projection of the cooling working fluid distribution channel on the cooling working fluid supply layer and the orthographic projection of the cooling working fluid outlet on the cooling working fluid supply layer;

[0018] The cooling working fluid supply unit is configured to control the cooling working fluid to enter through the cooling working fluid inlet, flow into the microchannel corresponding to below each hot spot through the cooling working fluid distribution channel, absorb the heat conducted from the hot spot of the chip to the microchannel, flow out through the cooling working fluid outlet, transport the heat of the chip, and reduce the temperature of the corresponding hot spot.

[0019] In a second aspect, the present invention further provides a method for measuring the temperature of a chip hot spot, which is applied to the temperature measurement structure of a chip hot spot according to any one of the first aspects, and the method includes:

[0020] Control the cooling working fluid supply unit to transport the heat of the chip under the flow of the cooling working fluid, and reduce the temperatures of multiple hot spots on the chip with the microfluidic heat dissipation unit;

[0021] Obtain the real-time temperature values of multiple hot spots determined by the thermopile temperature measurement unit, and the temperature differences between every two of the multiple hot spots;

[0022] Control the thermopile temperature measurement unit to determine the highest temperature value and the maximum temperature difference of multiple hot spots of the chip based on the multiple real-time temperature values and the multiple temperature differences, so as to determine the performance parameters of the chip based on the highest temperature value and the maximum temperature difference;

[0023] Wherein, the hot spot refers to a temperature change point that appears on a microscale inside the chip when the power distribution inside the chip is uneven; the performance parameters include the working state parameters of the chip, the multi-point temperature uniformity parameters on the chip, and the heat dissipation performance parameters of the microfluidic heat dissipation unit.

[0024] In a possible implementation manner, the cooling working fluid supply unit includes: a cooling working fluid supply layer, and a cooling working fluid inlet and a cooling working fluid outlet formed on the cooling working fluid supply layer; the thermopile temperature measurement unit is arranged at the positions of multiple hot spots in the chip unit, the microfluidic heat dissipation unit includes a microchannel cold plate, and microchannels and a cooling working fluid distribution channel that are communicated with each other and arranged on the back of the microchannel cold plate; the microchannels are arranged on the microchannel cold plate corresponding to the orthographic projection of the multiple hot spots; there is an overlapping area between the orthographic projection of the cooling working fluid distribution channel on the cooling working fluid supply layer and the orthographic projection of the cooling working fluid inlet on the cooling working fluid supply layer; there is an overlapping area between the orthographic projection of the cooling working fluid distribution channel on the cooling working fluid supply layer and the orthographic projection of the cooling working fluid outlet on the cooling working fluid supply layer;

[0025] The control of the cooling working fluid supply unit to transport the heat of the chip under the flow of the cooling working fluid and reduce the temperatures of multiple hot spots on the chip with the microfluidic heat dissipation unit includes:

[0026] Control the cooling working fluid supply unit to control the cooling working fluid to enter through the cooling working fluid inlet, flow into the microchannels corresponding to below each hot spot through the cooling working fluid distribution channel, absorb the heat of the hot spot of the chip transferred to the microchannels through heat conduction, and flow out through the cooling working fluid outlet, transport the heat of the chip, and reduce the temperature of the corresponding hot spot.

[0027] The beneficial effects of the preparation method of the temperature measurement structure of the chip hot spot provided in the second aspect are the same as those of the temperature measurement structure of the chip hot spot described in the first aspect or any possible implementation manner of the first aspect, and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The drawings described herein are used to provide a further understanding of the present invention and form a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0029] Figure 1 The structural schematic diagram of a temperature measurement structure of a chip hot spot provided by an embodiment of the present application is shown;

[0030] Figure 2 The structural schematic diagram of the application of a microchannel heat dissipation unit integrated with a thermopile temperature measurement unit to the in-situ temperature uniformity test of four hot spot chip units provided by an embodiment of the present application is shown in a top view scenario;

[0031] Figure 3 The top view structural schematic diagram of the chip unit area of a temperature measurement structure of a chip hot spot provided by an embodiment of the present application is shown;

[0032] Figure 4 The structural schematic diagram of a thermopile temperature measurement component on a single hot spot on a chip unit provided by an embodiment of the present application is shown;

[0033] Figure 5 The flowchart of another temperature measurement method of a chip hot spot provided by an embodiment of the present application is shown. BRIEF DESCRIPTION OF THE DRAWINGS:

[0035] 01 - Thermopile temperature measurement unit; 02 - Chip unit; 03 - Microchannel heat dissipation unit; 04 - Cooling working fluid supply unit; 041 - Cooling working fluid supply layer; 042 - Cooling working fluid inlet; 043 - Cooling working fluid outlet; 031 - Microchannel cold plate; 032 - Microchannel; 033 - Cooling working fluid distribution channel; 011A - First type thermopile; C - Cold end; H - Hot end; 011B - Second type thermopile; 021 - Chip area; 022 - Hot spot area; 011C - Thermopile pad; W - First thermopile material; E - Second thermopile material. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0036] For the convenience of clearly describing the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, terms such as "first" and "second" are used to distinguish identical or similar items with basically the same functions and roles. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and do not limit their order. Those skilled in the art can understand that terms such as "first" and "second" do not limit the quantity and execution order, and the terms "first" and "second" do not necessarily limit that they are different.

[0037] It should be noted that in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design solution described as "exemplary" or "for example" in the present invention should not be construed as being more preferred or having more advantages than other embodiments or design solutions. Rather, the use of words such as "exemplary" or "for example" is intended to present relevant concepts in a specific manner.

[0038] In the present invention, "at least one" means one or more, and "a plurality" means two or more. "And / or" describes the association relationship of associated objects and indicates that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one (item)" or similar expressions thereof refer to any combination of these items, including any combination of single item (s) or plural item (s). For example, at least one (item) of a, b or c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b and c can be single or multiple.

[0039] Figure 1 The structural schematic diagram of a temperature measurement structure for a chip hot spot provided by an embodiment of the present application is shown, as Figure 1 shown, the temperature measurement structure of the chip hot spot includes:

[0040] A thermopile temperature measurement unit 01, a chip unit 02, a microfluidic heat dissipation unit 03 and a cooling working fluid supply unit 04; the thermopile temperature measurement unit 01 is arranged on one side of the chip unit 02, the microfluidic heat dissipation unit 03 is located on the other side of the chip unit 02, and the cooling working fluid supply unit 04 is located on the side of the microfluidic heat dissipation unit 03 away from the chip unit 02. The chip unit 02 includes a chip area 021 and a hot spot area 022, and the hot spot area is inside the chip area.

[0041] The cooling working fluid supply unit is used to transport the heat of the chip under the flow of the cooling working fluid and reduce the temperatures of multiple hot spots on the chip with the microfluidic heat dissipation unit.

[0042] The thermopile temperature measurement unit is used to determine the real-time temperature values of multiple hot spots and the temperature differences between every two of the multiple hot spots; based on the multiple real-time temperature values and the multiple temperature differences, determine the highest temperature value and the maximum temperature difference of the multiple hot spots of the chip, so as to determine the performance parameters of the chip based on the highest temperature value and the maximum temperature difference.

[0043] Wherein, the hot spot refers to a temperature change point that appears on a microscale inside the chip when the power distribution inside the chip is uneven; the performance parameters include the working state parameters of the chip, the multi-point temperature uniformity parameters on the chip, and the heat dissipation performance parameters of the microfluidic heat dissipation unit.

[0044] It should be noted that one side and the other side of the chip unit are two relatively arranged surfaces.

[0045] In this application, the thermopile temperature measurement unit can be flexibly distributed according to the distribution position of the hot spots on the chip unit. By integrating the thermopile temperature measurement unit on the chip unit with the microfluidic heat dissipation unit and flexibly distributing the hot end and the cold end of the thermopile temperature measurement unit on the chip unit respectively, the temperature differences at multiple positions on the chip unit can be obtained, the temperature differences between multiple positions on the chip unit and the microchannel heat dissipation unit can be obtained, etc., and the working state of the chip unit, the uniformity of the multi-point temperature on the chip unit, and the heat dissipation performance of the microchannel heat dissipation structure can be evaluated according to the temperatures and temperature difference values read above.

[0046] Wherein, the hot end of the thermopile temperature measurement unit is the measurement end (called the working end), and the cold end connected to the measurement circuit through a lead is called the cold end (also called the compensation end).

[0047] The thermopile temperature measurement unit can adopt semiconductor processing technology and be directly integrated on the front of the chip unit, so as to realize in-situ testing of the temperature uniformity of the chip unit with the microfluidic heat dissipation unit. The thermopile temperature measurement unit has a wide temperature measurement range, good accuracy and sensitivity, and can measure the highest temperature and temperature difference of the chip unit with single and multiple hot spots. The thermopile temperature measurement unit is directly manufactured on the front of the chip unit through integrated circuit technology, and while realizing in-situ temperature measurement, it does not affect the integration of the heat source on the front of the chip.

[0048] In summary, the temperature measurement structure of the chip hot spot provided by the embodiment of the present application includes: a thermopile temperature measurement unit, a chip unit, a microfluidic heat dissipation unit, and a cooling working fluid supply unit; the thermopile temperature measurement unit is arranged on one side of the chip unit, the microfluidic heat dissipation unit is located on the other side of the chip unit, and the cooling working fluid supply unit is located on the side of the microfluidic heat dissipation unit away from the chip unit; the cooling working fluid supply unit is used to transport the heat of the chip under the flow of the cooling working fluid and reduce the temperatures of multiple hot spots on the chip with the microfluidic heat dissipation unit; the thermopile temperature measurement unit is used to determine the real-time temperature values of multiple hot spots and the temperature differences between every two of multiple hot spots; based on multiple real-time temperature values and multiple temperature differences, determine the highest temperature value and the maximum temperature difference of multiple hot spots of the chip, so as to determine the performance parameters of the chip based on the highest temperature value and the maximum temperature difference; compared with the traditional temperature measurement methods, such as compared with the infrared temperature measurement method, in the present application, the thermopile temperature measurement unit is arranged on the front of the chip unit, realizing in-situ temperature measurement and avoiding the influence of the external environment on the temperature measurement accuracy; compared with the surface-mounted thermocouple temperature measurement, it avoids the influence of the thermal interface material on the temperature measurement accuracy; compared with the temperature measurement diode, it can be applied to high-temperature measurement environments above 150°C and has a wide temperature measurement range; compared with the thermistor, using the thermopile temperature measurement unit for temperature measurement does not require an external excitation power supply, so it is not prone to self-heating, ensuring the temperature measurement accuracy, that is, it can realize the accurate evaluation of the microfluidic heat dissipation performance and the real-time and accurate monitoring of the chip working state, and also improves the accuracy and reliability of the temperature measurement method.

[0049] In the present application, for a chip unit with a microchannel heat dissipation structure, a thermopile temperature measurement unit is integrated on its front. If the hot end of the thermopile temperature measurement unit is located in the highest temperature region of the chip hot spot, the highest temperature region is generally located in the center region of the hot spot, and the cold end is located in the lowest temperature region of the chip, the lowest temperature region generally corresponds to the edge region of the hot spot directly above the cooling working fluid inlet in the microchannel, then the in-situ measurement of the maximum temperature difference of the chip hot spot can be realized, and the temperature uniformity of multiple hot spots can be monitored according to the differences in the maximum temperature differences of multiple hot spots. If the hot end is located in the highest temperature region of the hot spot and the cold end is located in the lowest temperature region of the chip, which generally corresponds to the chip region directly above the split flow channel, and this cold end is used as a reference node, and the temperature of the reference node is the temperature of the inlet cooling working fluid, then the in-situ test of the highest temperature of the chip can be realized, and the temperature uniformity of multiple hot spots can be monitored according to the highest temperature differences of multiple hot spots.

[0050] In the above implementation measures, the positions of the hot end and the cold end of the thermopile temperature measurement unit are only a reference position. The specific positions need to be determined according to the actual structure of the chip, the hot spot distribution, and the working state to determine the optimal position distribution. The embodiments of the present application do not make specific limitations in this regard. It should be noted that the thermopile temperature measurement unit can be directly manufactured on the front of the chip unit by using integrated circuit manufacturing technology. The hot end and the cold end of the thermopile temperature measurement unit can be flexibly distributed and the thermopile line width dimension can be adjusted according to the actual working state, specific structure, hot spot distribution, and microfluidic heat dissipation unit of the chip to meet the real-time monitoring of the highest temperature and the maximum temperature difference of single and multiple hot spots on the chip, which can not only evaluate the heat dissipation performance of the microfluidic radiator in time, but also avoid the reduction of chip reliability due to too high temperature and poor uniformity of the chip.

[0051] Optionally, Figure 2 FIG. is a schematic structural diagram of a microchannel heat dissipation unit integrated with a thermopile temperature measurement unit in a top view scenario for in-situ testing of the temperature uniformity of a four-hot-spot chip unit, as Figure 2 shown. The thermopile temperature measurement unit 01 includes multiple groups of thermopile temperature measurement components corresponding to the number of hot spots. Each group of the thermopile temperature measurement components includes a first-type thermopile 011A; the chip unit 02 includes a hot spot center region and a hot spot edge region. The first-type thermopile 011A has a hot end H and a cold end C. The hot end H of the first-type thermopile 011A is connected to the chip unit 02 in the hot spot center region, and the cold end C of the first-type thermopile 011A is connected to the chip unit 02 in the hot spot edge region to be used to determine the maximum temperature difference between multiple hot spots on the chip with the microfluidic heat dissipation unit.

[0052] It should be noted that Figure 1 FIG. shows a three-dimensional structural diagram of four hot spots on the chip unit. The embodiments of the present application do not make specific limitations on the number of hot spots, which can be specifically adjusted according to the actual application scenario.

[0053] Optionally, the hot spot center region refers to the highest temperature region of the hot spots of the chip; the hot spot edge region refers to the lowest temperature region at the edge of the hot spot corresponding directly above the microfluidic heat dissipation unit.

[0054] Optionally, referring to Figure 2, each thermopile temperature measurement component further includes a second-type thermopile 011B connected to the first-type thermopile 011A; the chip unit 02 further includes a chip lowest temperature region, the second-type thermopile 011B has a hot end H and a cold end C, the hot end H of the second-type thermopile 011B is connected to the chip unit 02 in the hot spot center region, and the cold end C of the second-type thermopile 011B is connected to the chip unit 02 in the chip lowest temperature region, so as to determine the highest temperature value of each hot spot on the chip with the microfluidic heat dissipation unit, and monitor the difference value of the maximum temperature difference between multiple highest temperature values based on the highest temperature value.

[0055] Wherein, the cold end is used as a reference node, and the temperature of the reference node is the temperature of the cooling working fluid inlet, so that the in-situ measurement of the highest temperature of the chip unit can be realized to monitor the difference of the maximum temperature difference of multiple hot spots.

[0056] Optionally, the chip lowest temperature region refers to the external region of the hot spot corresponding to directly above the microfluidic heat dissipation unit.

[0057] Optionally, the materials of the hot end of the first-type thermopile and the cold end of the first-type thermopile are different. The materials of the first-type thermopile and the second-type thermopile can be selected from materials such as P-Si / N-Si or P-Si / Al.

[0058] Figure 3 The figure shows a top view structural schematic diagram of a chip unit region of a chip hot spot temperature measurement structure provided by an embodiment of the present application, Figure 3 indicating the position correspondence relationship between the cold end of the thermopile and the hot end and the hot spot, as Figure 3 shown, the cold end C of the first-type thermopile 011A is located in the hot spot edge region, and the hot end H of the first-type thermopile 011A is located in the hot spot center region, that is, the hot spot area 022; the cold end C of the second-type thermopile 011B is located in the external region (lowest temperature region) of the hot spot, the reference temperature of the cold end temperature is the cooling working fluid inlet temperature, the hot end H of the second-type thermopile 011B is located in the hot spot center region, and the corresponding temperature of the hot end, that is, the highest temperature of the hot spot, is obtained through the temperature difference between the hot end and the cold end of the second-type thermopile 011B and the cold end reference temperature, so as to monitor the highest temperature difference of multiple hot spots.

[0059] Exemplarily, Figure 4 The figure shows a structural schematic diagram of a thermopile temperature measurement component on a single hot spot on a chip unit provided by an embodiment of the present application, as Figure 4As shown, each thermopile temperature measurement component includes a first-type thermopile and a second-type thermopile connected to the first-type thermopile. Among them, one is used to measure the highest temperature of the hot spot, and one is used to measure the difference between the highest temperature and the lowest temperature of the hot spot. The two thermopiles can use the same thermocouple material. The hot ends and cold ends of the thermocouples are connected end to end and connected to the peripheral circuit through the thermopile pad (PAD) 011C. By real-time monitoring the voltage change of the thermopile, the temperature change of each hot spot can be monitored, and the real-time temperature distribution of multiple hot spots on the chip can be obtained. The hot ends of the two thermopiles are located in the highest temperature area of the chip hot spot. The highest temperature area is generally located in the central area of the hot spot. The cold end C of the first-type thermopile 011A is located in the lowest temperature area of the chip. The lowest temperature area generally corresponds to the edge area of the hot spot directly above the cooling working fluid inlet in the microchannel; the cold end C of the second-type thermopile 011B is located in the lowest temperature area of the chip, generally corresponding to the chip area directly above the position of the liquid separation channel. The materials of the hot end and the cold end of the thermopile need to use two different materials. Among them, it can include the first thermopile material W and the second thermopile material E, and can adopt P-Si / N-Si, or P-Si / Al, etc., and be directly manufactured on the front of the microchannel heat dissipation chip through semiconductor processing technology.

[0060] Optionally, refer to Figure 1 or Figure 2 , the cooling working fluid supply unit 04 includes: a cooling working fluid supply layer 041, and a cooling working fluid inlet 042 and a cooling working fluid outlet 043 formed on the cooling working fluid supply layer 041. The cooling working fluid flows into the liquid separation channel through the cooling working fluid inlet, then flows into the microchannels under each hot spot, and finally flows out through the cooling working fluid outlet.

[0061] Optionally, refer to Figure 1 or Figure 2 , the thermopile temperature measurement unit 01 is arranged at the positions of multiple hot spots in the chip unit 02. The microchannel heat dissipation unit 03 includes a microchannel cold plate 031, and microchannels 032 and a cooling working fluid liquid separation channel 033 that are interconnected and arranged on the back of the microchannel cold plate 031; the microchannels 032 are arranged on the microchannel cold plate 031 corresponding to the orthographic projection of the multiple hot spots; the orthographic projection of the cooling working fluid liquid separation channel 033 on the cooling working fluid supply layer 041 and the orthographic projection of the cooling working fluid inlet 042 on the cooling working fluid supply layer 041 have an overlapping area; the orthographic projection of the cooling working fluid liquid separation channel 033 on the cooling working fluid supply layer 041 and the orthographic projection of the cooling working fluid outlet 043 on the cooling working fluid supply layer 041 have an overlapping area, that is, the cooling working fluid liquid separation channel 033 is respectively in a conducting state with the cooling working fluid inlet 042 and the cooling working fluid outlet 043.

[0062] The cooling working fluid supply unit is configured to control the cooling working fluid to enter through the cooling working fluid inlet, flow into the corresponding microchannels below each hot spot through the cooling working fluid distribution channel, absorb the heat conducted from the hot spots of the chip to the microchannels, flow out through the cooling working fluid outlet, transport the heat of the chip, and reduce the temperature of the corresponding hot spots.

[0063] Among them, the microchannels, the cooling working fluid inlet, and the cooling working fluid outlet can all be fabricated using semiconductor processing techniques.

[0064] In summary, the temperature measurement structure for chip hot spots provided in the embodiments of the present application includes: a thermopile temperature measurement unit, a chip unit, a microchannel heat dissipation unit, and a cooling working fluid supply unit; the thermopile temperature measurement unit is disposed on one side of the chip unit, the microchannel heat dissipation unit is located on the other side of the chip unit, and the cooling working fluid supply unit is located on the side of the microchannel heat dissipation unit away from the chip unit; the cooling working fluid supply unit is configured to transport the heat of the chip under the flow of the cooling working fluid and reduce the temperatures of multiple hot spots on the chip with the microchannel heat dissipation unit; the thermopile temperature measurement unit is configured to determine the real-time temperature values of the multiple hot spots and the temperature differences between any two of the multiple hot spots; based on the multiple real-time temperature values and the multiple temperature differences, determine the maximum temperature value and the maximum temperature difference of the multiple hot spots of the chip, so as to determine the performance parameters of the chip based on the maximum temperature value and the maximum temperature difference; compared with traditional temperature measurement methods, such as compared with infrared temperature measurement methods, in the present application, the thermopile temperature measurement unit is disposed on the front surface of the chip unit, realizing in-situ temperature measurement and avoiding the influence of the external environment on the temperature measurement accuracy; compared with surface-mounted thermocouple temperature measurement, it avoids the influence of the thermal interface material on the temperature measurement accuracy; compared with temperature measurement diodes, it can be applied to high-temperature measurement environments above 150 °C and has a wide temperature measurement range; compared with thermistors, using the thermopile temperature measurement unit for temperature measurement does not require an externally applied excitation power supply, so it is not prone to self-heating, ensuring the temperature measurement accuracy, that is, it can achieve precise evaluation of the microchannel heat dissipation performance and real-time precise monitoring of the chip working state, and also improves the accuracy and reliability of the temperature measurement method.

[0065] Figure 5 The flowchart of another temperature measurement method for chip hot spots provided in the embodiments of the present application is shown, which is applied to Figures 1 to 4 any of the temperature measurement structures for chip hot spots, such as Figure 5 shown, the method includes:

[0066] Step 101: Control the cooling working medium supply unit to transport the heat of the chip under the flow of the cooling working medium, and reduce the temperatures of multiple hot spots on the chip with the microfluidic heat dissipation unit.

[0067] The cooling working medium supply unit includes: a cooling working medium supply layer, and a cooling working medium inlet and a cooling working medium outlet formed on the cooling working medium supply layer; the thermopile temperature measurement unit is arranged at the positions of multiple hot spots in the chip unit, the microfluidic heat dissipation unit includes a microchannel cold plate, and a microchannel and a cooling working medium distribution channel that are interconnected and arranged on the back of the microchannel cold plate; the microchannel is arranged on the microchannel cold plate corresponding to the orthographic projection of the multiple hot spots; there is an overlapping area between the orthographic projection of the cooling working medium distribution channel on the cooling working medium supply layer and the orthographic projection of the cooling working medium inlet on the cooling working medium supply layer; there is an overlapping area between the orthographic projection of the cooling working medium distribution channel on the cooling working medium supply layer and the orthographic projection of the cooling working medium outlet on the cooling working medium supply layer;

[0068] The specific implementation process of Step 101 may include:

[0069] Control the cooling working medium supply unit to control the cooling working medium to enter through the cooling working medium inlet, flow into the microchannel corresponding to each hot spot below through the cooling working medium distribution channel, absorb the heat of the hot spot of the chip conducted to the microchannel, flow out through the cooling working medium outlet, transport the heat of the chip, and reduce the temperature of the corresponding hot spot.

[0070] Step 102: Obtain the real-time temperature values of the multiple hot spots determined by the thermopile temperature measurement unit, and the temperature differences between every two of the multiple hot spots.

[0071] Among them, the hot spot refers to the temperature change point that appears at the microscale inside the chip when the power distribution inside the chip is uneven.

[0072] Step 103: Control the thermopile temperature measurement unit to determine the highest temperature value and the maximum temperature difference of the multiple hot spots of the chip based on the multiple real-time temperature values and the multiple temperature differences, so as to determine the performance parameters of the chip based on the highest temperature value and the maximum temperature difference.

[0073] Among them, the performance parameters include the working state parameters of the chip, the multi-point temperature uniformity parameters of the chip, and the heat dissipation performance parameters of the microfluidic heat dissipation unit.

[0074] In summary, a method for measuring the temperature of hot spots on a chip provided by an embodiment of the present application controls a cooling working fluid supply unit to transport the heat of the chip under the flow of the cooling working fluid, and reduces the temperatures of multiple hot spots on the chip with the microfluidic heat dissipation unit; obtains the real-time temperature values of the multiple hot spots determined by the thermopile temperature measurement unit, as well as the temperature differences between every two of the multiple hot spots; controls the thermopile temperature measurement unit to determine the maximum temperature value and the maximum temperature difference of the multiple hot spots on the chip based on the multiple real-time temperature values and the multiple temperature differences, so as to determine the performance parameters of the chip based on the maximum temperature value and the maximum temperature difference; wherein, the hot spot refers to a temperature change point that appears at the microscale inside the chip when the internal power distribution of the chip is uneven; the performance parameters include the working state parameters of the chip, the multi-point temperature uniformity parameters on the chip, and the heat dissipation performance parameters of the microfluidic heat dissipation unit. Compared with traditional temperature measurement methods, such as compared with the infrared temperature measurement method, the thermopile temperature measurement unit is arranged on the front of the chip unit in the present application, realizing in-situ temperature measurement and avoiding the influence of the external environment on the temperature measurement accuracy; compared with surface-mounted thermocouple temperature measurement, it avoids the influence of the thermal interface material on the temperature measurement accuracy; compared with temperature measurement diodes, it can be applied to high-temperature measurement environments above 150°C and has a wide temperature measurement range; compared with thermistors, using a thermopile temperature measurement unit for temperature measurement does not require an externally applied excitation power supply, so it is not prone to self-heating, ensuring the temperature measurement accuracy, that is, it can realize the accurate evaluation of the microfluidic heat dissipation performance and the real-time and accurate monitoring of the chip working state, and also improves the accuracy and reliability of the temperature measurement method.

[0075] Although the present invention has been described in conjunction with various embodiments herein, however, in the process of implementing the claimed invention, those skilled in the art can understand and realize other variations of the disclosed embodiments by viewing the drawings, the disclosure content, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality of situations. A single processor or other unit can implement several functions recited in the claims. Certain measures are recited in mutually different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0076] Although the present invention has been described in connection with specific features and their embodiments, it will be apparent that various modifications and combinations can be made without departing from the spirit and scope of the invention. Accordingly, this specification and the drawings are merely exemplary illustrations of the invention defined by the appended claims and are considered to cover any and all modifications, variations, combinations, or equivalents within the scope of the invention. Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention is also intended to include these changes and modifications.

Claims

1. A temperature measurement structure for chip hotspots, characterized in that, the temperature measurement structure for chip hotspots includes: a thermopile temperature measurement unit, a chip unit, a microfluidic heat dissipation unit, and a cooling working fluid supply unit; the thermopile temperature measurement unit is arranged on one side of the chip unit, the microfluidic heat dissipation unit is located on the other side of the chip unit, and the cooling working fluid supply unit is located on the side of the microfluidic heat dissipation unit away from the chip unit; the cooling working fluid supply unit is used to transport the heat of the chip under the flow of the cooling working fluid and reduce the temperatures of multiple hotspots on the chip with the microfluidic heat dissipation unit; the cooling working fluid supply unit includes: a cooling working fluid supply layer, and a cooling working fluid inlet and a cooling working fluid outlet formed on the cooling working fluid supply layer; the thermopile temperature measurement unit is used to determine the real-time temperature values of multiple hotspots and the temperature differences between every two of the multiple hotspots; based on the multiple real-time temperature values and the multiple temperature differences, determine the highest temperature value and the maximum temperature difference of the multiple hotspots of the chip, so as to determine the performance parameters of the chip based on the highest temperature value and the maximum temperature difference; wherein, the hotspot refers to a temperature change point that appears at the microscale inside the chip when the internal power distribution of the chip is uneven; the performance parameters include the working state parameters of the chip, the multi-point temperature uniformity parameters of the chip, and the heat dissipation performance parameters of the microfluidic heat dissipation unit; the thermopile temperature measurement unit is arranged at the positions of multiple hotspots in the chip unit, the microfluidic heat dissipation unit includes a microchannel cold plate, and microchannels and a cooling working fluid distribution channel that are interconnected and arranged on the back of the microchannel cold plate; the microchannels are arranged on the microchannel cold plate corresponding to the orthographic projection of the multiple hotspots; the orthographic projection of the cooling working fluid distribution channel on the cooling working fluid supply layer and the orthographic projection of the cooling working fluid inlet on the cooling working fluid supply layer have an overlapping area; the orthographic projection of the cooling working fluid distribution channel on the cooling working fluid supply layer and the orthographic projection of the cooling working fluid outlet on the cooling working fluid supply layer have an overlapping area.

2. The temperature measurement structure for chip hotspots according to claim 1, characterized in that, the thermopile temperature measurement unit includes multiple groups of thermopile temperature measurement components corresponding to the number of hotspots, and each group of thermopile temperature measurement components includes a first-type thermopile; the chip unit includes a hotspot center area and a hotspot edge area, the first-type thermopile has a hot end and a cold end, the hot end of the first-type thermopile is connected to the chip unit in the hotspot center area, and the cold end of the first-type thermopile is connected to the chip unit in the hotspot edge area, so as to determine the maximum temperature difference between every two of the multiple hotspots on the chip with the microfluidic heat dissipation unit.

3. The temperature measurement structure for chip hotspots according to claim 2, characterized in that, The hot spot center region refers to the region with the highest temperature of the hot spot of the chip; the hot spot edge region refers to the region with the lowest temperature at the edge of the hot spot corresponding directly above the microfluidic heat dissipation unit.

4. The temperature measurement structure of the chip hot spot according to claim 2, characterized in that, each group of thermopile temperature measurement components further includes a second type of thermopile connected to the first type of thermopile; the chip unit further includes a chip lowest temperature region, the second type of thermopile has a hot end and a cold end, the hot end of the second type of thermopile is connected to the chip unit in the hot spot center region, and the cold end of the second type of thermopile is connected to the chip unit in the chip lowest temperature region, so as to determine the highest temperature value of each hot spot on the chip with the microfluidic heat dissipation unit, and monitor the difference value of the maximum temperature difference between multiple highest temperature values based on the highest temperature value.

5. The temperature measurement structure of the chip hot spot according to claim 4, characterized in that, the chip lowest temperature region refers to the external region of the hot spot corresponding directly above the microfluidic heat dissipation unit.

6. The temperature measurement structure of the chip hot spot according to claim 4, characterized in that, the materials for preparing the hot end of the first type of thermopile and the cold end of the first type of thermopile are different.

7. The temperature measurement structure of the chip hot spot according to claim 1, characterized in that, the cooling working fluid supply unit is used to control the cooling working fluid to enter through the cooling working fluid inlet, flow into each microchannel corresponding to the lower part of each hot spot through the cooling working fluid distribution channel, absorb the heat conducted from the hot spot of the chip to the microchannel, flow out through the cooling working fluid outlet, transport the heat of the chip, and reduce the temperature of the corresponding hot spot.

8. A method for measuring the temperature of a chip hot spot, characterized in that, applied to the temperature measurement structure of the chip hot spot according to any one of claims 1-7, the method includes: controlling the cooling working fluid supply unit to transport the heat of the chip under the flow of the cooling working fluid, and reducing the temperatures of multiple hot spots on the chip with the microfluidic heat dissipation unit; acquiring the real-time temperature values of multiple hot spots determined by the thermopile temperature measurement unit, and the temperature differences between multiple hot spots pairwise; controlling the thermopile temperature measurement unit to determine the highest temperature value and the maximum temperature difference of multiple hot spots of the chip based on multiple real-time temperature values and multiple temperature differences, so as to determine the performance parameters of the chip based on the highest temperature value and the maximum temperature difference; wherein, the hot spot refers to a temperature change point that appears on a microscale inside the chip when the internal power distribution of the chip is uneven; the performance parameters include the working state parameters of the chip, the multi-point temperature uniformity parameters of the chip, and the heat dissipation performance parameters of the microfluidic heat dissipation unit.

9. The method for measuring the temperature of a chip hot spot according to claim 8, characterized in that, The cooling working fluid supply unit includes: a cooling working fluid supply layer, and a cooling working fluid inlet and a cooling working fluid outlet formed on the cooling working fluid supply layer; the thermopile temperature measuring unit is arranged at the positions of a plurality of hot spots in the chip unit, the microfluidic heat dissipation unit includes a microchannel cold plate, and a microchannel and a cooling working fluid distribution channel which are communicated with each other and arranged on the back surface of the microchannel cold plate; the microchannel is arranged on the microchannel cold plate corresponding to the orthographic projection of the plurality of hot spots; there is an overlapping area between the orthographic projection of the cooling working fluid distribution channel on the cooling working fluid supply layer and the orthographic projection of the cooling working fluid inlet on the cooling working fluid supply layer; there is an overlapping area between the orthographic projection of the cooling working fluid distribution channel on the cooling working fluid supply layer and the orthographic projection of the cooling working fluid outlet on the cooling working fluid supply layer; Controlling the cooling working fluid supply unit to transport the heat of the chip under the flow of the cooling working fluid and reduce the temperatures of a plurality of hot spots on the chip with the microfluidic heat dissipation unit includes: Controlling the cooling working fluid supply unit to control the cooling working fluid to enter through the cooling working fluid inlet, flow into the microchannel corresponding to each hot spot below through the cooling working fluid distribution channel, absorb the heat conducted from the hot spot of the chip to the microchannel, flow out through the cooling working fluid outlet, transport the heat of the chip, and reduce the temperature of the corresponding hot spot.

Citation Information

Patent Citations

  • Adaptive temperature control chip microsystem

    CN105540529A

  • Internal temperature measuring apparatus and temperature difference measuring module

    CN107209065A