A flexible silicon array detector and a method of manufacturing the same
By designing a flexible spherical silicon array detector, the problem of traditional detectors being unable to fit aerospace devices is solved, enabling precise detection and signal calibration of high-energy particle radiation from aerospace devices, and adapting to radiation identification and positioning of diverse equipment.
Patent Information
- Application Number
- CN202111592542.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-12-23
- Publication Date
- 2025-12-05
- Estimated Expiration
- 2041-12-23
AI Technical Summary
Traditional rigid detectors cannot perfectly fit the diversity and complexity of airborne equipment on spacecraft, resulting in inaccurate radiation load detection and affecting the authenticity and efficiency of signal transmission.
A flexible spherical silicon array detector is designed, which uses a flexible polyimide thin film substrate and flexible stretchable interconnecting wires to integrate high-energy particle sensing elements, forming an "island-bridge" structure that can tightly encapsulate electronic devices and achieve accurate detection of high-energy particle radiation.
It enables comprehensive identification and positioning of the radiation environment of airborne equipment on spacecraft, improves the accuracy and efficiency of signal transmission, and adapts to the needs of different working environments.
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Figure CN114420680B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to a kind of detection equipment for space vehicle onboard electronic equipment, in particular to a kind of flexible square silicon array detector and its preparation method. BACKGROUND
[0002] The signal that space vehicle onboard electronic equipment is transmitted to ground command center in real time is the important reference information directly reflecting the in-orbit working state of the vehicle, and it has very important significance for the flight safety of space vehicle and the effectiveness of space experiment data.However, high-energy charged particles in the space radiation environment can easily affect the operation safety of spacecraft and satellites, including single particle effect.Single particle effect refers to that when a single particle with certain energy, such as high-energy proton, electron or heavy ion in the space radiation environment, is incident on the electronic components of the spacecraft or satellite, energy is deposited in the sensitive area of the electronic components, thereby causing the state of the semiconductor device or integrated circuit to change, resulting in the error effect of the device.
[0003] Currently, in order to avoid the influence of ionizing radiation, space vehicles adopt the method of setting the operation algorithm of component device circuit to restart at any time.Although the method of restarting at any time can avoid the influence of high-energy particles on the electrical components of space vehicles, it seriously affects the transmission efficiency of data, and there is still a certain probability that the transmission of error data affected by ionizing radiation, which wastes valuable space station resources.
[0004] Therefore, real-time and effective identification of the position of onboard semiconductor devices affected by particles / rays in the ionizing radiation environment directly affects the authenticity and accuracy of the returned signal.The traditional detector can well meet the identification and positioning of the semiconductor microelectronic devices affected by particles / rays in the ionizing radiation environment during the working process of the space vehicle.However, considering the diversity of the shape of onboard devices of space vehicles, including curved surfaces, irregular surfaces and other non-planar shapes, the traditional detector is generally a rigid detector with a plate shape, and the detector cannot perfectly fit on the electronic device to be detected, and the result obtained by the detector is not the actual radiation load on the electronic device, which has certain limitations in application.Therefore, there is an urgent need for a flexible detector that can tightly cover the electronic device to truly realize the detection of the radiation condition of the electronic device. SUMMARY
[0005] The present application aims to overcome the defects of the prior art, and provides a flexible square silicon array detector and its preparation method.The detector can tightly cover the electronic device to truly realize the accurate detection of high-energy particle radiation of the electronic device.
[0006] The technical scheme of the present application is: a flexible square silicon array detector, comprising an integrated circuit board and a flexible square silicon array, the integrated circuit board is provided with a high-energy particle sensing element, the high-energy particle sensing element is located between the integrated circuit board and the flexible square silicon array, and the high-energy particle sensing element is coincident with the position of a square silicon chip in the flexible square silicon array.
[0007] Further, the flexible square silicon array comprises a high-molecular flexible polyimide film substrate layer, a flexible stretchable interconnection wire, a solder pad and a square silicon chip, the square silicon chip is connected with the flexible stretchable interconnection wire through the solder pad, a plurality of square silicon chips are connected in parallel through the flexible stretchable interconnection wire and are integrated in a dot matrix form on the high-molecular flexible polyimide film substrate layer, and the square silicon chip is not stretchable.
[0008] Further, the flexible square silicon array adopts an “island-bridge” structure, the square silicon chip is located at the position of the “island”, and the flexible stretchable interconnection wire is located at the position of the “bridge”.
[0009] Further, the integrated circuit board can be an integrated circuit board group formed by a plurality of integrated circuit boards.
[0010] Further, the integrated circuit board is a flexible circuit board.
[0011] Further, the high-energy particle sensing element is a random dynamic memory.
[0012] Further, the flexible stretchable interconnection wire is in a snake shape.
[0013] On the other hand, a preparation method of a flexible square silicon array detector, characterized by comprising the following steps:
[0014] Step S100, based on the position of the electronic element and the mechanical large deformation theory, the specific shape of the flexible stretchable interconnection wire is designed;
[0015] Step S200, stripping the metal copper on the surface of the high-molecular flexible polyimide copper-clad film, forming a solder pad and a flexible stretchable interconnection wire on the surface of the copper-clad film;
[0016] Step S300, cutting the high-molecular flexible polyimide film substrate layer of the lower layer of the high-molecular flexible polyimide copper-clad film along the edge of the flexible stretchable interconnection wire, forming a hollow flexible stretchable circuit;
[0017] Step S400, welding the square silicon chip on the solder pad to prepare a flexible square silicon array;
[0018] Step S500, preparing an integrated circuit board provided with a high-energy particle sensing element, the high-energy particle sensing element is arranged at a position corresponding to the square silicon chip on the integrated circuit board;
[0019] Step S600, connect the high-energy particle sensing element and the high-molecular flexible polyimide film substrate layer of the flexible square silicon array together, and ensure that the positions of the square silicon chip and the high-energy particle sensing element coincide during the connection.
[0020] Further, the molecular flexible polyimide copper clad film comprises an upper metal copper layer and a lower high-molecular flexible polyimide film substrate layer, and the metal copper layer is processed to form a pad and a flexible stretchable interconnection wire, the pad and the flexible stretchable interconnection wire are prepared at the same time, and the width of the pad is larger than the line width of the flexible stretchable interconnection wire.
[0021] Further, the flexible stretchable interconnection wire needs to meet the following conditions: when subjected to 50% tensile strain, 180-degree bending or 180-degree torsion, the stretchable interconnection wire will not be shaped buckling and damaged.
[0022] The present application has the following beneficial effects: for the diversity and complexity of the surface of the spacecraft on-board equipment, including curved surfaces and irregular surfaces and other non-planar structures, the flexible square silicon array can be well fitted, and the small-size semiconductor detector with high energy resolution, high position resolution and fast response time can accurately detect ionizing radiation from electronic equipment in all directions, based on the rapid and efficient identification and positioning of ionizing radiation environment particles / rays interference, the algorithm for running the electronic equipment can be corrected, and the calibration of the backhaul signal can be realized. In addition, the flexible square silicon array with dot matrix structure has strong designability, and the dot matrix pitch can be customized according to the pitch of the electronic component array in the spacecraft to meet the needs of different working environments. BRIEF DESCRIPTION OF DRAWINGS
[0023] Figure 1 is a structure diagram of the flexible square silicon array detector in embodiment 1.
[0024] Figure 2 is Figure 1 the sectional view of A-A in
[0025] Figure 3 is a schematic diagram of the preparation method of the flexible square silicon array detector
[0026] In the above drawings, the following reference signs are included: 1, integrated circuit board; 2, high-energy particle sensing element; 3, pad; 4, flexible stretchable interconnection wire; 5, square silicon chip; 6, high-molecular flexible polyimide film substrate layer; 7, metal copper layer. DETAILED DESCRIPTION
[0027] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0028] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0029] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0030] Example 1
[0031] like Figures 1-2 As shown, a flexible spherical silicon array detector includes an integrated circuit board 1 and a flexible spherical silicon array. A high-energy particle sensing element 2 is disposed on the integrated circuit board 1 and is located between the integrated circuit board 1 and the flexible spherical silicon array. The position of the high-energy particle sensing element 2 coincides with that of the spherical silicon chip 5 in the flexible spherical silicon array.
[0032] The flexible sq silicon array includes a flexible polyimide film substrate 6, flexible stretchable interconnects 4, pads 3, and sq silicon chips 5. The sq silicon chips 5 are connected to the flexible stretchable interconnects 4 via the pads 3. Multiple sq silicon chips 5 are connected in parallel via the flexible stretchable interconnects 4 and integrated in a lattice on the flexible polyimide film substrate 6. The sq silicon chips 5 are not stretchable and adopt an "island-bridge" structure. The sq silicon chips 5 are located in the "island" position to detect the radiation load of high-energy particles on electronic components, and the flexible stretchable interconnects 4 are located in the "bridge" position, which can withstand large mechanical deformations such as bending, torsion, and stretching.
[0033] The integrated circuit board 1 can be a one-piece structure or a group of integrated circuit boards formed by multiple integrated circuit boards, and is preferably a flexible circuit board.
[0034] The high-energy particle sensing element 2 can verify the effectiveness of the square silicon chip detector, preferably a random dynamic memory, which is only subject to errors in stored data under radiation, and can be restored for use by refreshing the memory data again. When the flexible square silicon array is bombarded by high-energy particles, the square silicon chip will generate a weak charge pulse, and at the same time, the stored value of the random dynamic memory will change. The effectiveness of the square silicon chip detection is verified by comparing the change of the stored data of the random dynamic memory and the bombardment received by the flexible square silicon array.
[0035] The flexible stretchable interconnection wire 4 is preferably serpentine.
[0036] Since the high-molecular flexible polyimide has the flexible characteristic of arbitrary bending, the flexible square silicon array with a high-molecular flexible polyimide film substrate layer can wrap some complex non-planar electronic devices or non-planar arranged core electronic elements (such as different heights), form a kind of "flexible protective star clothing" structure, effectively realize the identification and positioning of the ionizing radiation environment heavy ion interference from all directions received by the electronic device, and play a full range of protection effect on the airborne microelectronic device.
[0037] Embodiment 2
[0038] In order to prepare the flexible square silicon array detector in embodiment 1, embodiment 2 provides a preparation method of a flexible square silicon array detector, which specifically includes the following steps:
[0039] Step S100, based on the position of the electronic element and the mechanical large deformation theory, the specific shape of the flexible stretchable interconnection wire is designed.
[0040] The flexible square silicon array adopts the design concept of "island-bridge" structure, that is, the square silicon chip is in the position of "island" and cannot be stretched, and the square silicon chip 5 is coincided with the position of the electronic element, so as to detect the radiation load of the electronic element, and the flexible stretchable interconnection wire is in the position of the bridge and can bear the mechanical large deformation such as bending, twisting and stretching.
[0041] The flexible stretchable interconnection wire needs to meet the following conditions: when bearing 50% tensile strain, 180-degree bending or 180-degree twisting, the stretchable interconnection wire will not be shaped buckling and damaged.
[0042] Step S200, the metal copper on the surface of the high-molecular flexible polyimide copper-clad film is stripped by a laser processing equipment, and the surface of the copper-clad film forms the solder pad 3 and the flexible stretchable interconnection wire 4, Figure 3(a) (b) shown; the high-molecular flexible polyimide copper-clad film includes an upper metal copper layer 7 and a lower high-molecular flexible polyimide film substrate layer 6, the metal copper layer 7 is stripped by laser processing to form a solder pad 3 and a flexible stretchable interconnection wire 4, the solder pad 3 and the flexible stretchable interconnection wire 4 are prepared simultaneously, the width of the solder pad 3 is larger than the line width of the flexible stretchable interconnection wire 4, facilitating the welding of electronic components.
[0043] Step S300, cutting the lower high-molecular flexible polyimide film substrate layer 6 of the high-molecular flexible polyimide copper-clad film along the edge of the flexible stretchable interconnection wire 4 by a laser processing device to form a hollow flexible stretchable circuit, as shown in Figure 3 (c) shown, at this time, the line width of the lower high-molecular flexible polyimide film substrate layer 6 is slightly larger than the line width of the upper flexible stretchable interconnection wire 4.
[0044] Step S400, welding a square silicon chip 5 on the solder pad 3 to prepare a flexible square silicon array, as shown in Figure 3 (d) shown.
[0045] Step S500, preparing an integrated circuit board 1 provided with a high-energy particle sensing element 2, the high-energy particle sensing element 2 is arranged at a position corresponding to the square silicon chip 5 on the integrated circuit board 1, Figure 3 (e) shown.
[0046] Step S600, pasting the high-molecular flexible polyimide film substrate layer 6 of the flexible square silicon array and the high-energy particle sensing element 2 together, ensuring that the positions of the square silicon chip 5 and the high-energy particle sensing element 2 coincide, as shown in Figure 3 (f) shown.
[0047] For the diversity and complexity of the surfaces of the onboard equipment of the spacecraft, including curved surfaces and irregular surfaces and other non-planar structures, the flexible square silicon array can be well fitted thereto, and this small-size semiconductor detector with high-energy resolution, high-position resolution and fast response time can accurately detect ionizing radiation from electronic equipment in various directions, and based on the fast and efficient identification and positioning of ionizing radiation environment particles / rays interference, the algorithm for the operation of the electronic equipment can be corrected in a targeted manner to realize the calibration of the backhaul signal. In addition, the flexible square silicon array with the dot matrix structure has strong designability, and the dot matrix pitch can be customized according to the pitch of the array of electronic components in the spacecraft to adapt to the needs of different working environments.
[0048] The above embodiments are the preferred embodiments of the present application, but the embodiments of the present application are not limited to the above embodiments, and any changes, modifications, substitutions, combinations and simplifications made without departing from the spirit and principles of the present application shall be equivalent replacement modes and shall be included in the protection scope of the present application.
Claims
1. A flexible silicon array detector, characterized by, The flexible integrated circuit board comprises a flexible integrated circuit board and a flexible square silicon array, a high-energy particle sensing element is arranged on the integrated circuit board, the high-energy particle sensing element is located between the integrated circuit board and the flexible square silicon array, and the high-energy particle sensing element is coincident with the position of the square silicon chip in the flexible square silicon array; the flexible square silicon array comprises a high-molecular flexible polyimide film substrate layer, a flexible stretchable interconnection wire, a pad and a square silicon chip, the square silicon chip is connected with the flexible stretchable interconnection wire through the pad, a plurality of square silicon chips are connected in parallel through the flexible stretchable interconnection wire and are integrated in a dot matrix form on the high-molecular flexible polyimide film substrate layer, and the square silicon chip is not stretchable.
2. The flexible silicon array detector of claim 1, wherein, The flexible square silicon array adopts an “island-bridge” structure, the square silicon chip is located at the position of the “island”, and the flexible stretchable interconnection wire is located at the position of the “bridge”.
3. The flexible silicon array detector of claim 1, wherein, The integrated circuit board is an integrated circuit board group formed by a plurality of integrated circuit boards.
4. The flexible silicon array detector of claim 1, wherein, The high-energy particle sensing element is a random dynamic memory.
5. The flexible silicon array detector of claim 1, wherein, The flexible stretchable interconnection wire is in a serpentine shape.
6. A method of fabricating a flexible silicon array detector, comprising: The method comprises the following steps: S100, designing the specific shape of the flexible stretchable interconnection wire based on the position of the electronic element and the mechanical large deformation theory; S200, stripping the metal copper on the surface of the high-molecular flexible polyimide copper-clad film, and forming the pad and the flexible stretchable interconnection wire on the surface of the copper-clad film; S300, cutting the high-molecular flexible polyimide film substrate layer of the lower layer of the high-molecular flexible polyimide copper-clad film along the edge of the flexible stretchable interconnection wire to form a hollow flexible stretchable circuit; S400, welding the square silicon chip on the pad to prepare the flexible square silicon array; S500, preparing the flexible integrated circuit board provided with the high-energy particle sensing element, and the high-energy particle sensing element is arranged at the position corresponding to the square silicon chip of the integrated circuit board; and S600, connecting the high-molecular flexible polyimide film substrate layer of the flexible square silicon array and the high-energy particle sensing element together, and ensuring that the positions of the square silicon chip and the high-energy particle sensing element are coincident during the connection.
7. The method of claim 6, wherein the flexible silicon array probe is prepared by the steps of: The high-molecular flexible polyimide copper-clad film comprises a metal copper layer on the upper layer and a high-molecular flexible polyimide film substrate layer on the lower layer, the metal copper layer is processed to form the pad and the flexible stretchable interconnection wire, the pad and the flexible stretchable interconnection wire are prepared simultaneously, and the width of the pad is greater than the line width of the flexible stretchable interconnection wire. 8. The method of claim 6, wherein the flexible silicon array probe is prepared by the steps of: The flexible stretchable interconnection wire needs to meet the following conditions: the stretchable interconnection wire will not be shaped buckling and damaged when bearing 50% tensile strain, 180-degree bending or 180-degree torsion.
Citation Information
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