Semiconductor equipment module processing using additive manufacturing

Abstract

Methods, systems, and computer programs are presented for manufacturing a showerhead for a semiconductor manufacturing system. A method includes an operation of drilling a first hole in a panel made of a first material, where the first hole has a first diameter. Additionally, the method includes an operation of coating the first hole and the panel with a second material to cover the first hole and the panel with the second material. Further, the method includes drilling a second hole concentric with the first hole, thereby producing a component having a hole coated with the second material. The second hole has a second diameter that is smaller than the first diameter. Additionally, the method includes an operation of manufacturing a showerhead using the component, where gas can be delivered through the second hole of the panel in the showerhead.

Description

[0001] Priority Claim

[0002] This application is a continuation of U.S. Patent Application Serial No. 62 / 925,419, filed on October 24, 2019, the entire content of which is incorporated herein by reference. Technical Field

[0003] The subject matter disclosed herein generally relates to methods, systems, and machine-readable storage media for manufacturing components for use in semiconductor manufacturing equipment. Background Art

[0004] The background description provided here is for the purpose of generally presenting the background of the disclosure. The work of the currently named inventors, to the extent it is described in this background art section as well as in various aspects of the specification that at the time of filing the application could not be determined to be prior art, is neither expressly nor impliedly admitted to be prior art to the present disclosure.

[0005] In semiconductor manufacturing equipment, fluid channels are embedded in certain components of a chamber to bring gases or liquids into or out of the chamber, thereby heating or cooling certain areas. These channels are fabricated by casting, machining, and brazing layers. However, there may be several problems associated with casting structures (e.g., made of aluminum A356), such as reduced precision in positioning tubes or heater structures, elemental contamination of brazing foils when brazing layers together, precision and expensive copper foils, longer processing times for manufacturing components, and capital-intensive manufacturing methods.

[0006] In addition, casting and brazing structures impose limitations on the dimensions of these components. Summary of the Invention

[0007] Some examples are based on or include friction stir welding additive manufacturing techniques. For example, MELD additive manufacturing is an additive manufacturing technique based on solid-state plastic deformation and diffusion bonding to form multi-layer structures, but any other friction stir welding additive manufacturing can also be used.

[0008] In some examples, solid-state additive manufacturing is similar to a friction-based joining process performed at low temperatures, and this solid-state additive manufacturing method has the advantages of lower residual stresses and excellent microstructural uniformity required for post-processing (e.g., anodizing). Solid-state additive manufacturing of equipment components can shorten the manufacturing cycle and simplify manufacturing through computer numerical control (CNC) processing.

[0009] Using solid-state additive manufacturing, heaters, coolers, gas distributors, or multi-task components can be fabricated that are typically not manufacturable using traditional manufacturing methods or may be prohibitively costly to manufacture. With solid-state additive manufacturing, features can be created within a solid material as one layer is added at a time. These features include, but are not limited to, heater elements, cooling tubes and channels, or tubeless gas channels.

[0010] Additionally, multiple types of metals, alloys (similar or different), or composite materials can be used in each layer to fabricate functionally graded materials (FGMs) that provide different properties (such as heat, electrical conductivity, response to plasma) on different surfaces of the component.

[0011] Fabricating exemplary components with embedded features using solid-state additive manufacturing has the following benefits:

[0012] – Greater flexibility in using aluminum AA 6061 and AA 3003 when traditionally only Al 356 could be used;

[0013] – Higher precision in placing internal structures within the component;

[0014] – Enhanced ability to insert multiple types of similar or dissimilar features within one component;

[0015] – Substantially eliminates elemental contamination caused by copper foils and high-silicon casting alloys;

[0016] – Reduces costs due to shorter processing times and minimal material usage;

[0017] – Reduces costs by integrating solid-state additive manufacturing equipment into existing metalworking operations, enabling vertical processing integration for equipment suppliers;

[0018] – Capable of performing solid-state additive processing using computer numerical control (CNC) technology without investing in molds. Additionally, in some examples, tools for brazing are not required, and there are few or no costs associated with the main body heating furnace;

[0019] – Reduces or eliminates the lead time for molds and tools associated with brazing development in CNC processing;

[0020] – In some CNC processes, the operating tachometer time is much shorter than for casting and brazing. Additionally, compared to casting or brazing techniques, solid-state additive manufacturing is closer to being able to provide machining tolerances.

[0021] One general aspect includes a method for manufacturing a component having embedded features. The method includes an operation for machining a first groove along a surface of a substrate. The first groove starts at a first end and terminates at a second end, and the first end and the second end are on the same side of the substrate. Additionally, the method includes an operation of placing a first tube in or on the groove. The first tube covers the groove from the first end to the second end. Further, the method includes an operation of depositing a first layer above the substrate and the first tube using a solid-state additive manufacturing technique. The first layer completely covers the first tube, wherein the first tube is configured to carry fluid through the component.

[0022] One general aspect includes a method for manufacturing a showerhead component for a showerhead in a semiconductor manufacturing system. The showerhead component includes a faceplate. The method includes an operation of drilling a first hole in the faceplate made of a first material, the first hole having a first diameter. The method further includes coating the first hole and the faceplate with a second material to cover the surface of the faceplate and squeezing and filling the first hole with the second material. Additionally, the method includes an operation of drilling a second hole concentric with the first hole, thereby producing a component having a hole coated with the second material. The second hole has a second diameter smaller than the first diameter. Further, the showerhead is formed using the showerhead component, wherein gas can be delivered through the second hole of the substrate. Description of the Drawings

[0023] The various drawings in the figures only show exemplary embodiments of the present disclosure and should not be considered as limiting its scope.

[0024] Figure 1 Illustrated is a process of adding a solid material layer using solid-state additive manufacturing according to some exemplary embodiments.

[0025] Figure 2 Illustrated is a process for forming holes in a showerhead with a protective coating according to some exemplary embodiments.

[0026] Figure 3A Illustrated is a process for creating a multi-layer structure with embedded features according to some exemplary embodiments.

[0027] Figure 3B Examples of features embedded at different depths are shown.

[0028] Figure 4 Shown is the creation of a component having embedded channels for heating and cooling according to some exemplary embodiments.

[0029] Figure 5 Shown is a component having multiple layers and different cooling and heating channels according to some exemplary embodiments.

[0030] Figure 6Illustrates a process for embedding a tube within a multi-layer component according to some exemplary embodiments.

[0031] Figure 7 Shows a process for creating multiple layers according to some exemplary embodiments, the multiple layers including different materials and having embedded features.

[0032] Figure 8 Shows examples of some embedded features.

[0033] Figure 9 Shows a cross-sectional view of two members joined by friction stir welding according to some exemplary embodiments.

[0034] Figure 10 Shows creating multiple layers by fusion according to some exemplary embodiments.

[0035] Figure 11 Shows a component having embedded channels and three different properties according to some exemplary embodiments.

[0036] Figure 12 Illustrates a top plate of a semiconductor manufacturing apparatus according to some exemplary embodiments.

[0037] Figure 13 Shows a top plate manufactured using solid-state additive manufacturing according to some exemplary embodiments.

[0038] Figure 14 Shows examples of some components having embedded features.

[0039] Figure 15 Shows heater and cooler channels in a tube for carrying fluid according to some exemplary embodiments.

[0040] Figure 16 Shows a superheater / cooler having a gas distributor according to some exemplary embodiments.

[0041] Figure 17 Shows a flat heater / cooler plate having gas delivery according to some exemplary embodiments.

[0042] Figure 18 Is an atomic layer deposition (ALD) liner having an embedded purge gas system according to some exemplary embodiments.

[0043] Figure 19 Is an etch chamber according to some exemplary embodiments.

[0044] Figure 20A flowchart of a method for fabricating a component with embedded features for a semiconductor manufacturing apparatus using solid-state additive manufacturing according to some exemplary embodiments.

[0045] Figure 21 A block diagram illustrating an example of a machine 900 on or by which one or more exemplary process embodiments described herein may be implemented or controlled. Detailed Description

[0046] Exemplary methods, systems, and computer programs are directed to fabricating components for semiconductor manufacturing apparatuses via solid-state additive manufacturing to create embedded features (e.g., embedded fluid channels) within the components. The examples are only representative of possible variations. Unless otherwise explicitly stated, components and features are optional, may be combined or subdivided, and operations may vary in order or be combined or subdivided. In the following description, numerous specific details are set forth for purposes of explanation to provide a thorough understanding of the exemplary embodiments. However, it will be apparent to those skilled in the art that the subject matter may be practiced without these specific details.

[0047] Figure 1 Illustrates a process for adding a layer of material using solid-state additive manufacturing according to some exemplary embodiments. Additive manufacturing (AM), also known as 3D printing, constructs an object layer by layer using computer-aided design. This is in contrast to traditional manufacturing, which cuts, drills, and grinds away unwanted excess from a solid block of material (usually metal). This is the opposite of subtractive manufacturing methods that remove material from an existing object to create a new object. Synonyms for AM include additive manufacturing, additive process, additive technology, additive layer manufacturing, layer-by-layer manufacturing, 3D printing, and freeform manufacturing.

[0048] MELD is a solid-state process for solid-state additive manufacturing, repair, coating, and joining of metals and metal matrix composites. A solid-state process means that the material does not reach its melting temperature during the process. Additionally, MELD is essentially an open atmosphere process that rarely requires environmental controls such as special vacuum or gas shielding, thus making MELD scalable and capable of fabricating larger components as compared to other solid-state additive manufacturing processes. Not melting means better mechanical and performance characteristics.

[0049] MELD is a severe plastic deformation (SPD), or just plastic deformation. Embodiments are presented herein with reference to MELD solid-state additive manufacturing, but other types of solid-state additive manufacturing or SPD processes may also be used to create structures.

[0050] Friction Stir Welding (FSW) has been around for many years. FSW is a solid-state joining process that uses a non-consumable tool to join two opposing workpieces without melting the workpiece material. The friction between the rotating tool and the workpiece material generates heat, which results in a softened region near the FSW tool. As the tool moves along the joint line, the tool mechanically mixes the two pieces of metal and forges the hot and softened metal through the mechanical pressure applied via the tool, much like joining clay or dough. FSW is commonly used to forge or extrude aluminum, especially for structures that require extremely low joining defects.

[0051] MELD adds material to a base member called a substrate and, similar to FSW, no material is melted. However, MELD deposits a layer of material onto the substrate in order to add additional layers.

[0052] As Figure 1 shown, the MELD tool 104 rotates while conveying the additive 106 to be deposited onto the substrate 102, thereby forming the MELD deposition layer 108. The MELD tool 104 moves across the substrate 102 to deposit the additive across the entire substrate 102.

[0053] Using MELD, the additive 106 plastifies (i.e., becomes a "goo" similar to chewing gum) when conveyed by the head of the MELD tool 104 at an appropriate strain rate or rotational rate, pressure, and temperature. However, it should be noted that the additive 106 does not reach its melting point.

[0054] As the MELD tool 104 moves across the substrate 102, the MELD tool 104 applies pressure to the substrate 102. The MELD deposition layer 108 can have a thickness between 500 μm and 2 mm, although other values would also be possible. The MELD deposition layer 108 does not have to be uniform across the substrate 102, allowing for the possibility of creating patterns (e.g., spaces) on the layer produced above the substrate 102.

[0055] The additive 106 can be many different types, such as different types of aluminum and alloys, as these materials are not melted. Since the additive 106 is not melted during processing, there are no residual stresses that would otherwise occur during welding.

[0056] Solid-state additive manufacturing has a variety of uses for producing semiconductor manufacturing equipment components:

[0057] 1. Coating special materials onto conventional materials (such as nozzles and pedestals).

[0058] 2. Embedding features within components (e.g., top plate heaters and / or coolers, gas delivery systems).

[0059] 3. Manufacture FGM materials with different properties in different parts of the component (e.g., a substrate with a low coefficient of thermal expansion (CTE)).

[0060] 4. Provide fine-grained (FG) or ultrafine-grained (UFG) materials. UFG has two advantages. First, the ability to produce materials with a customized grain size. UFG materials can be increased to a customized grain size that is very suitable for semiconductor processes under specific heat treatment or thermomechanical treatment. Second, raw materials for forming or superforming processes for formable or even non-formable metals and alloys; FG / UFG materials are essentially superplastic at specific strains, strain rates, and temperatures. For example, materials treated by MELD can be used in forming processes for linings, cupolas, etc.

[0061] Advantages of using solid-state additive manufacturing include:

[0062] 1. The heater / cooler is in 100% contact with the plate, which means higher efficiency.

[0063] 2. Cover "poor" materials that may be sensitive to the process (e.g., exposure to plasma) with better materials that are less or not sensitive to the process.

[0064] 3. Control metallurgical functions layer by layer (e.g., create components with embedded channels).

[0065] Figure 2 A process for generating holes in a showerhead 214 with a protective coating is shown according to some exemplary embodiments. If the panel has embedded holes and solid-state additive manufacturing is applied over the holes, the holes can be filled to a certain depth with the additive. The plasticized material applied by the MELD tool head enters the holes and fills them. This process is actually the same as cladding. The additive can be different from the material of the substrate 102 and the additive can be selected to achieve the desired properties of the final component, such as protection from plasma or avoidance of contamination in the chamber.

[0066] The showerhead 214 is a component for delivering gas into a semiconductor manufacturing chamber. Typically, the showerhead 214 is made of aluminum 6061 and the showerhead 214 includes a plurality of holes for gas passage.

[0067] The problem with aluminum 6061 is that it contains trace amounts of iron, silicon, and copper, which may cause contamination of the plasma chamber. Under process conditions, magnesium may also cause outgassing. Additionally, there may be welds on some components of the showerhead 214, and the welding material may also be a source of contamination or accelerate corrosion-related failures.

[0068] There are other materials more suitable for the showerhead 214, such as aluminum alloys or pure aluminum of the 1000 series. In some exemplary embodiments, the aluminum alloy is a binary aluminum alloy with an aluminum content of at least 99 mass percent, 0.5%-1.0% mass percent of magnesium (Mg), and very low impurities (e.g., a maximum of 0.06% mass of silicon and a maximum of 0.06% mass of copper). In other exemplary embodiments, the aluminum alloy may include other mass percentages of aluminum content, e.g., in the range from 50% to 99.9%. However, these are expensive materials for manufacturing the complete showerhead 214.

[0069] One solution is to use aluminum 6061 as the substrate 102 and cover the surface of the showerhead 214 exposed to the plasma and the holes in the showerhead 214 with a better material that has a longer lifespan and avoids process contamination caused by covering iron and silicon with aluminum 6061.

[0070] To fabricate the surface of the showerhead 214 exposed to the plasma, the process starts with the substrate 102. In operation 202, holes are drilled mechanically in the substrate 102 to obtain the component 204. The drilled holes are larger than the final size of the holes in the showerhead 214 so that space is available for the protective material inside the holes.

[0071] In operation 206, the component 204 is clad with a different material (e.g., aluminum 3003) to fill the holes and add a layer of the different material and obtain the component 208. In some exemplary embodiments, the thickness of the added layer is between 500 μm and 4 mm, but other values are also possible. Since the cladding by solid-state AM is done using high pressure, the additive is plasticized and flows freely and can be pushed into the holes. In some embodiments, the holes can be 3 mm high and the cladding can fill the entire depth of the holes.

[0072] In operation 210, holes are drilled in the component 208, but these holes are smaller than the holes fabricated in operation 202. The result is that the panel 212 has a protective layer and holes that are also covered with a different material. Then the panel 212 face-down is used as the surface of the showerhead 214 that can be exposed to the plasma.

[0073] In some exemplary embodiments, the first hole is eight-hundredths of a millimeter, the second hole is four-hundredths of a millimeter, resulting in a thickness of the second material coating of two-hundredths of a millimeter. In some exemplary embodiments, the diameter of the first hole is in the range from six-hundredths of a millimeter to 3 mm, the diameter of the second hole is in the range from four-hundredths of a millimeter to 0.5 mm, and the difference between the diameters of these holes is at least one-hundredth of a millimeter. In one example, the surface coating of the holes of the second material is in the range from 50 μm to 2 mm.

[0074] Then the showerhead 214 has a more robust and less expensive structure of aluminum 6061, but has the process advantages of high-quality aluminum alloy exposed to the elements in the chamber. For example, the substrate can be clad with a binary aluminum alloy with an aluminum content of at least 99 mass percent and a magnesium (Mg) content of 0.5% - 1.0% by mass.

[0075] For example, in deposition operations, nickel plating is a good way to protect components. However, nickel plating is accompanied by many problems and complex processes. By using solid-state additive manufacturing technology for nickel, the problems of nickel plating disappear, and manufacturing nickel-plated components is a simpler process. In addition, tantalum is also difficult to machine, but tantalum can also be used for solid-state additive manufacturing.

[0076] In addition, aluminum 6061 is used in many components because it is cheaper than most other wrought aluminum alloys and commercially available, but it is not the best material that can be used for semiconductor tool manufacturing. There are better chamber materials, such as C22 (austenitic nickel-chromium-molybdenum-tungsten alloy), which has reliable performance in corrosive environments; however, they are very expensive and not easily manufactured by conventional manufacturing. Through solid-state additive manufacturing, a substrate of inexpensive material (such as 316 / 316L) can be used and clad with Hastelloy C22. In addition, different types of materials can be used as the showerhead panel to further reduce manufacturing costs or improve performance.

[0077] It is worth noting that due to the adoption of solid-state additive manufacturing, the cladding can be completed in 3D because the print head can move on three axes and print on multiple surfaces without having to be completely flat and horizontally placed. In addition, these components can be moved by a robotic arm to create cladding in almost any possible 3D direction and structure. Therefore, in some exemplary embodiments, the panel 212 can have curvature rather than being flat.

[0078] The same principle can be used for the cladding material to manufacture the pedestal that supports the substrate. The pedestal includes a heater for heating the substrate. Some pedestals are made of aluminum 3003, but there is a limit to how high the temperature of the pedestal can reach before the aluminum 3003 starts to creep.

[0079] In some exemplary embodiments, the pedestal is made of aluminum 6061, which is a strong material, and the aluminum 6061 is covered with a softer material, such as aluminum alloy or pure aluminum. In this way, the pedestal can be heated to a higher temperature.

[0080] Figure 3AIllustrated is a process for creating a multi-layer structure with embedded features according to some exemplary embodiments. In some exemplary embodiments, the embedded features include channels for conveying fluid for cooling or heating. Multiple features with different characteristics can be embedded in the same component simultaneously.

[0081] In Figure 3A the example shown, component 316 is made of an embedded heating element 318 and a cooling element 320 disposed on a multi-layer.

[0082] At operation 302, machining is performed on substrate 102 to create grooves to hold the embedded features, thereby producing component 304.

[0083] At operation 306, the features (heating element 318 and cooling element 320) are placed (e.g., embedded) on component 304 to obtain component 308. The features can include tubes for conveying fluid.

[0084] At operation 310, solid-state additive manufacturing is performed on component 308 to cover the embedded features, thereby producing component 312. This process can be repeated 314 several times to obtain several layers of embedded features. In Figure 3A the example shown, three layers of embedded features are created to create component 316, but other embodiments can have fewer or additional layers of embedded features. Additionally, the embedded features need not be the same in each layer. For example, one layer can be for cooling elements while another layer can be for heating elements, or the order of the features in each layer can be changed, e.g., by alternating elements, thereby creating a checkerboard pattern.

[0085] Figure 3B Examples of features embedded at different depths are shown. These features can be embedded at different depths. For example, a feature can be embedded such that the distance from the bottom of the feature to the surface is twice (or more) the height of the feature, a feature can be exposed and only partially embedded within the substrate, or any distance in between.

[0086] Figure 4 Shown is the creation of a component with embedded channels for heating and cooling according to some exemplary embodiments. Figure 4 A perspective view of substrate 102 is shown, in which a heating element 318 and a cooling element 320 are embedded.

[0087] The embedded heating element 318 and cooling element 320 surround above substrate 102, where fluid can enter at one end and flow out from the other end.

[0088] Figure 5Shows a component with multiple layers and different cooling and heating channels according to some exemplary embodiments. After adding the embedded channels, an application cladding covers the embedded channels. Additionally, the process is repeated to add additional embedded channels and different layers.

[0089] In Figure 5 the example shown, two layers 502 and 504 are added above the substrate 102, and embedded channels are included between each layer to provide full coverage for the components for heating or cooling.

[0090] Figure 6 Illustrates a process of embedding tubes within a multi-layer component according to some exemplary embodiments. Figure 6 Shows a perspective view of the manufacturing process. In operation 602, the substrate 102 is machined to create a groove, resulting in component 604. In operation 606, the tube 614 is placed on the groove to create component 608. In some exemplary embodiments, the tube 614 is made of copper, but other materials can also be used.

[0091] In operation 610, the MELD process is used to cover component 608 with another material layer, resulting in component 612 with the embedded tube 614.

[0092] In some exemplary embodiments, the tube 614 can be used during the manufacturing of component 612. The tube 614 is made of a disposable material and the tube 614 is subsequently removed (e.g., by dissolving the material), leaving component 612 with an embedded hollow channel. For example, a boiler-type plastic can be used, and after completing solid-state additive manufacturing, the component is placed in a furnace and the plastic evaporates in the form of carbon dioxide. Another example is using a sacrificial material to fill the channels and the MELD can move over an incompressible material (such as many water-soluble salts). After the MELD process, the salt is dissolved by dipping the component in water or by a final wash.

[0093] One of the disadvantages of the welding process is that the contact between the tube 614 (e.g., copper tube) and the substrate 102 is limited; that is, there is no complete contact. However, solid-state additive manufacturing applies a large pressure, along with the flow of the material, which will make the contact greater until full contact, and there is also a metallurgical bond, which further increases the amount of contact, approaching 100% contact. Additionally, using solid-state additive manufacturing to process embedded features avoids using epoxy resin for full contact, and it solves the problem of contact loss due to epoxy resin loss or epoxy resin cracking caused by thermal cycling. In the current manufacturing process, the contact rate may be around 10%, but in solid-state additive manufacturing, the contact rate can be between 90% and 100%.

[0094] Due to the large pressure applied to the tube 614 during solid-state additive manufacturing or friction stir welding, the tube 614 may deform if it has a thin wall or is made of a weak material. To strengthen the tube 614 during solid-state additive manufacturing, the tube 614 is filled with a liquid to give it strength. After solid-state additive manufacturing, the liquid is removed.

[0095] When the tube 614 has quasi-hydrostatic pressure, this means there is pressure everywhere and there is no way to collapse the tube 614 or break it.

[0096] Figure 7 Illustrated is a process for creating multiple layers according to some exemplary embodiments, the multiple layers including different materials and having embedded features. The component 702 includes various layers with embedded features, which include a heating element 318 and a cooling element 320.

[0097] By controlling the arrangement of the heating element 318 and the cooling element 320, the temperature distribution of the component 702 can be better controlled during chamber operation.

[0098] The component 704 also includes multiple layers of embedded features, but unlike the component 702, the different layers have different types of materials, so the entire component 704 is not made of the same elements. In this way, not only can heating and cooling be controlled, but also the properties of the surfaces in the component 704 can be controlled. For example, the surface exposed to the plasma can be constructed with a more expensive material that will not contaminate the chamber.

[0099] Figure 8 Examples of some embedded features are shown. Some features that can be embedded include a tube 802 and a tube 804 with a shielding cover; that is, the tube 804 includes a tube of two materials, one on the inside and one on the outside.

[0100] In addition, examples of embedded features include a duct 806 with a square cross-section, and a duct 808 with a cross-section including a square and a connecting rectangle above the square to form a groove. This channel can be used to convey fluid through the groove at the top.

[0101] In addition, exemplary embedded features include a duct 810 with a cross-section similar to that of the duct 808, except that instead of having a continuous groove at the top, holes are made to connect to the square channel at the bottom. The number and size of the holes can be controlled to regulate the flow of fluid.

[0102] Figure 9 A cross-sectional view of two components connected by friction stir welding according to some exemplary embodiments is shown. The component 902 is aluminum 6061, while the component 904 is aluminum silicon. Initially, the component 904 is screwed into the component 902. However, the contact is not perfect. Therefore, friction stir welding is used to clad the two components together.

[0103] Figure 9 Illustrates how components are fused together towards the top where friction stir welding occurs, but the welding is only carried out to about half of the thread distance, so a small amount of stir welding is shown at the bottom of the thread.

[0104] On the surface where welding occurs, there is a small amount of mixing of the two materials due to the stirring of the plasticized material.

[0105] Due to the possible existence of some material mixing, the design must take this mixing into account. For example, in Figure 2 the case of the shown nozzle, the coating on the hole must be large enough to avoid exposing the mixed part on the surface after the second drilling is performed.

[0106] To avoid the mixed part being exposed on the surface, after the second drilling is performed, the diameter of the first drilled hole is larger than that of the second hole. In this way, after the second hole is drilled, the contact area where the two materials meet will not be exposed. For example, the first hole is eight-hundredths of a millimeter and the second hole is four-hundredths of a millimeter.

[0107] Figure 10 Shows the creation of multiple layers by fusion according to some exemplary embodiments. FGM enables components to be composed of multiple layers. The selection of layers is intended to control the characteristics of the FGM component, such as the strength, heat transfer, weight, and chemical reactions of different layers.

[0108] For FGM, the layers are added one by one, starting from the substrate 102, and then additional layers 1002 are added by solid-state additive manufacturing. Each layer can have different materials with different characteristics (e.g., electrical conductivity or thermal conductivity and diffusivity).

[0109] For example, if the top layer is designed to contact a plasma chamber or certain chemicals, the top layer can be formed of a high-performance material that performs well when exposed to the plasma chamber or certain chemicals. However, if other materials do not contact the plasma chamber, they can be formed of cheaper materials. In addition, not all layers must be made of different materials; the same material can be used for multiple layers.

[0110] For example, several bottom layers can be formed of aluminum 6061, which is stronger and cheaper than low-zinc aluminum 3003. The top two layers can be formed of low-zinc aluminum 3003 with fewer impurities, so that the impurities will not contaminate the chamber during operation.

[0111] Many types of materials can be used as the substrate 102 and for cladding using a solid-state additive manufacturing process. Some base materials include rolled aluminum 6061, cast aluminum 356, cast aluminum 357, and stainless steel 316L or 304.

[0112] Some example materials for solid-state additive manufacturing or cladding include aluminum alloys, low-zinc aluminum 3003, aluminum 1050, nickel, Inconel 625, Inconel 718, Haynes C22, tantalum, cadmium, and pure aluminum.

[0113] Using FGM, new possibilities are found to fabricate new components coated with materials that were too expensive to use in the past, such as platinum or aluminum alloys with at least 99 mass percent aluminum and a small amount of magnesium. Additionally, some of these materials are non-machinable and non-castable, so solid-state additive manufacturing enables the use of these materials.

[0114] Figure 11 A component with embedded channels and three layers of different properties according to some exemplary embodiments is shown. There is an electric heater inside the base to heat the substrate, and vapor from the chamber may come into contact with the base. As mentioned above, some bases are made of aluminum 3003, which is an aluminum alloy containing a diluted amount of manganese and silicon. However, aluminum 3003 cannot support very high operating temperatures.

[0115] Another problem with the aluminum 3003 base is accelerated fluorination, which may cause the base to start flaking. Flaking may be due to fluorination, where fluorine radicals react with aluminum or aluminum alloys.

[0116] When the base flakes, it produces a powder material (aluminum fluoride), which turns into vapor, and the particles in the vapor contaminate the manufacturing chamber.

[0117] To avoid the problems of aluminum 3003, the base can be made of other materials, such as aluminum alloys. However, the machinability of aluminum alloys is very low, and they are also expensive (e.g., 5 to 7 times the cost of aluminum 3003).

[0118] One solution to create a durable base is to start with a stronger and cheaper material (such as aluminum 6061), and then clad it with a material more suitable for chemical contact in the chamber, such as pure aluminum or an aluminum alloy. In this way, the base has chemical resistance and strong structural integrity. Additionally, these layers do not have to be of the same size, and a small layer of pure aluminum or an aluminum alloy can be built on top of a thicker aluminum 6061 substrate.

[0119] These layers can be of different materials. In some exemplary embodiments, the head can supply two different materials simultaneously, such as aluminum and aluminum fluoride. The head includes two feeders, one for powder A and one for powder B. Then the materials can be combined, such as ceramics and metals for simultaneous processing. In some exemplary embodiments, a binder can also be added to the process, such as to bond aluminum fluoride. In this way, different alloys or composite compounds may be produced in the layer-by-layer coating process, and these alloys or composite compounds may not be readily available commercially.

[0120] Some substrates are made of a metal base with embedded cooling channels and a ceramic coating on top. Over time, due to the CTE difference between the substrate and the coating, the substrate cracks. Thus, the lifespan of the substrate is a problem.

[0121] Components can be designed to have layers with different conductivities and different CTEs. In some exemplary embodiments, one or more layers with different CTEs are inserted between the metal base and the ceramic top. The CTE difference between the layers can be adjusted to avoid cracking. In some exemplary embodiments, the goal is to increase the conductivity at the bottom to transfer heat away from the top.

[0122] The base 1102 is composed of a substrate 1108 with a high CTE (and high conductivity), an intermediate layer 1106 with a medium CTE, and a top layer 1104 with a low CTE added. In this way, the CTE transition between the bottom and the top is less critical.

[0123] In addition, additional layers with different CTE levels can be mixed to make the transition of CTE values smoother. As described above, different features, such as channels for guiding fluids, can be included between them.

[0124] Figure 12 The top plate 1200 of a semiconductor manufacturing device according to some exemplary embodiments is shown. The top plate 1200 has a casting with cooling and heating channels inside. Some of these components 1202, 1206 are made of aluminum 356, which is not desirable for this process because it contains silicon. Other components (e.g., 1204, 1208, 1212) are made of aluminum 6061. Since manufacturing these components involves casting, cracking problems occur.

[0125] By casting, it is difficult (or impossible for some designs) to embed coolers and heaters in the same component. Therefore, some components with coolers and some components with heaters are manufactured, and then these components are assembled to form the top plate 1200. In this example, the top layer is manufactured for cooling and the layer below is manufactured for heating.

[0126] Figure 13 Illustrated is a top plate 1302 fabricated using solid-state additive manufacturing according to some exemplary embodiments. In some exemplary embodiments, components on the top plate 1302 are built using solid-state additive manufacturing and adding embedded features such as cooling and heating channels. For example, the substrate can be aluminum 6061, and then additional layers are added on top using aluminum 356 or other types of materials.

[0127] Using a solid-state additive manufacturing technique such as MELD, the top plate 1302 is made with heaters and coolers in the same layer, which results in the cooling channels being closer to the chamber, thereby improving the ability to control temperature.

[0128] For example, in some semiconductor manufacturing processes, the temperature can fluctuate over a wide range, e.g., from a low temperature to a higher temperature of the coolant. By placing the cooler closer to the chamber, it can be cooled faster and with less energy.

[0129] Furthermore, by providing an integrated component with embedded channels, the problems of assembling components together, connecting components together, and keeping components in contact with each other are eliminated. For example, the concern of tightening bolts to hold components together disappears. Components expand and contract according to temperature, and different components may be at different temperatures, so spaces may be created between components. By providing an integrated, single component, the problem of component separation disappears.

[0130] Note that Figure 13 the embodiments shown are examples and do not describe every possible embodiment. Other embodiments may utilize different configurations of heaters and coolers. Thus, Figure 13 the embodiments shown should not be construed as exclusive or restrictive, but rather illustrative.

[0131] Figure 14 Examples of some components with embedded features are shown. Component 1402 is a tube with a rectangular cross-section and two embedded tubes. These tubes are used for cooling and are coated with a material layer different from the body. During cooling, water or some other liquid flows through the tubes.

[0132] Component 1402 can be fabricated using the process shown in Figure 3 and Figure 4 ; that is, slots are cut in the substrate and then the features are covered with friction stir welding. In some exemplary embodiments, component 1402 is made of stainless steel with an aluminum 6061 coating in the channels, but other materials can also be used.

[0133] Component 1406 is a circular component for cooling and is similar to component 1402, but is bent rather than straight. The cooling channels enter the first tube 1408, go around the circumference twice (once at the top and once at the bottom), and leave through tube 1410, and vice versa. Component 1406 also includes some connectors for fastening on the sides.

[0134] Figure 15 Component 1502 having heater channels, cooler channels, and a tube 1504 passing through the center for carrying fluid is shown according to some exemplary embodiments. The heater channels and cooler channels provide temperature control for component 1502, and the tube 1504 can be used to carry fluid, for example, to control the temperature of other components in a semiconductor manufacturing chamber.

[0135] Component 1502 is constructed by solid-state additive manufacturing, as described previously, starting from a substrate and then adding additional layers with embedded features, where the MELD process is used to add the additional layers. After the layers have been added, the tube is made by drilling through the center.

[0136] Component 1502 provides great flexibility for temperature control. For example, the tube 1504 is used to carry gas, and the gas can be heated as it travels through component 1502. Similarly, the gas can be cooled as it passes through, or a liquid used for cooling can also be cooled as it passes through.

[0137] Although component 1502 is illustrated as having many layers, component 1502 can also be constructed to have fewer layers, such as an embedded cooler or heater channel from 1 to 20 layers.

[0138] Figure 16 Component 1602 having embedded heaters and coolers in a central tube 1604 for fluid distribution is shown according to some exemplary embodiments. Component 1602 is manufactured in the same way as Figure 15 component 1502, except that the central tube 1604 is drilled such that the drilling makes holes in the internal channels (which can be heaters or coolers). In this way, the tube 1604 can be fed through the embedded features in the center. For example, in some exemplary embodiments, component 1602 can be closed at the top, and then fluid is introduced into the tube 1604 through the embedded features. Then the fluid leaves the tube 1604 at the bottom.

[0139] Figure 17 A flat heater / cooler plate with fluid conveyance is shown according to some exemplary embodiments. Initially, the substrate 102 is machined with grooves for the heating or cooling channels, but the grooves are made at two different heights.

[0140] In operation 1702, features are inserted into grooves in two different layers, resulting in component 1704. In operation 1706, the pattern is amplified to create a larger component 1708 with embedded features.

[0141] In operation 1710, the top feature is truncated (e.g., trimmed) such that the seal of the top feature is broken, resulting in component 1712. Component 1712 can then be used to convey gas through the top feature while the bottom function can be used for temperature control (e.g., heating or cooling).

[0142] Figure 18 is an ALD liner 1800 with an embedded purge gas system according to some exemplary embodiments. The ALD liner 1800 is manufactured starting from a machined block 1806.

[0143] Channels 1808 are placed on the ALD liner 1800, where the channels 1808 are used to purge gas from the chamber. Additionally, friction stir welding is used to create seals 1804 to seal the channels 1808.

[0144] Additionally, a filler material 1802 is added above the seals 1804 by solid-state additive manufacturing. The result is an ALD liner 1800 with embedded channels for purging gas.

[0145] Figure 19 Shows an etching chamber 1900 according to one embodiment. Exciting an electric field between two electrodes is one way to achieve radio frequency (RF) gas discharge in an etching chamber. When an oscillating voltage is applied between the electrodes, the resulting discharge is called a capacitively coupled plasma (CCP) discharge.

[0146] Plasma 1902 can be generated using a stable feed gas to obtain various chemical reaction by-products, which are produced by the dissociation of various molecules caused by electron-neutral collisions. The chemical aspect of etching involves the reaction of neutral gas molecules and their dissociated by-products with the surface molecules to be etched and produces volatile molecules that can be pumped away. When plasma is generated, positive ions are accelerated from the plasma through the space charge sheath that separates the plasma from the chamber walls, thus hitting the substrate surface with sufficient energy to remove material from the substrate surface. This is called ion bombardment or ion sputtering. However, some industrial plasmas cannot produce ions with sufficient energy to effectively etch the surface by pure physical means.

[0147] A controller 1916 manages the operation of the chamber 1900 by controlling different elements in the chamber (e.g., RF generator 1918, gas source 1922, and gas pump 1920). In one embodiment, a fluorocarbon gas, such as CF 4 and C-C 4 F8 It is used in dielectric etching processes due to its anisotropic and selective etching capabilities, but the principles described herein can be applied to other plasma - generating gases. Fluorocarbon gases are easily decomposed into chemical reaction by - products, including smaller molecules and atomic radicals. These chemical reaction by - products etch away the dielectric material. In one embodiment, for low - k devices, the dielectric material can be SiO 2 or SiOCH.

[0148] Chamber 1900 is illustrated with a top electrode 1904 and a bottom electrode 1908. The top electrode 1904 can be grounded or coupled to an RF generator (not shown), and the bottom electrode 1908 is coupled to an RF generator 1918 through a matching network 1914. The RF generator 1918 provides RF power at one, two, or three different RF frequencies. At least one of the three RF frequencies can be turned on or off depending on the desired configuration of chamber 1900 for a particular operation. In Figure 19 the illustrated embodiment, the RF generator 1918 provides frequencies of 2 MHz, 27 MHz, and 60 MHz, but other frequencies are possible.

[0149] Chamber 1900 includes: a gas showerhead on the top electrode 1904 for introducing the gas provided by a gas source 1922 into chamber 1900; and a perforated confinement ring 1912 for pumping the gas out of chamber 1900 through a gas pump 1920. In some exemplary embodiments, the gas pump 1920 is a turbomolecular pump, but other types of gas pumps can also be used.

[0150] When a substrate 1906 is present in chamber 1900, a silicon focusing ring 1910 is located beside the substrate 1906 so that a uniform RF field exists at the bottom surface of the plasma 1902 for uniform etching on the surface of the substrate 1906. Figure 19 The embodiment of shows a triode reactor configuration where the top electrode 1904 is surrounded by a symmetric RF - grounded electrode 1924. The insulator 1926 is a dielectric that isolates the grounded electrode 1924 from the top electrode 1904.

[0151] Each frequency can be selected for a specific purpose in the substrate manufacturing process. In Figure 19In an example, RF power is provided at 2 MHz, 27 MHz, and 60 MHz. The 2 MHz RF power provides ion energy control, and the 27 MHz and 60 MHz powers provide control over plasma density and the dissociation mode of the chemical species. This configuration (where each RF power can be turned on or off) enables certain processes using ultra-low ion energy on one or more substrates and certain processes where low ion energy (below 1900 or 200 eV) must be used (e.g., for the soft etching of low-k materials).

[0152] In another embodiment, 60 MHz RF power is used on the top electrode 1904 to obtain ultra-low energy and very high density. This configuration enables the chamber to be cleaned with a high-density plasma while minimizing sputtering of the electrostatic chuck (ESC) surface when the substrate is not in the chamber 1900. When the substrate is absent, the ESC surface is exposed, and any ion energy on the surface should be avoided, which is why the bottom 2 MHz and 27 MHz power supplies may be turned off during the cleaning process.

[0153] Figure 20 is a flowchart of a method 2000 for manufacturing a component for use in semiconductor manufacturing equipment having embedded features using solid-state additive manufacturing according to some exemplary embodiments.

[0154] Operation 2002 is for machining a first groove along the surface of a substrate, where the first groove starts at a first end and ends at a second end. The first end and the second end are on the same side of the substrate.

[0155] From operation 2002, the method flows to operation 2004 for placing a first tube over the groove. The first tube covers the groove from the first end to the second end.

[0156] From operation 2004, the method flows to operation 2006, which is for depositing a first layer over the substrate and the first tube using solid-state additive manufacturing techniques. The first layer completely covers the first tube, where the first tube is configured to carry a first fluid through the component.

[0157] In one example, the solid-state additive manufacturing technique includes MELD using a rotating head that applies pressure to the first layer material to plastify the material without reaching the melting point of the first layer material.

[0158] In one example, method 2000 further includes machining a second groove along the surface of the substrate before placing the first layer; and placing a second tube over the second groove before placing the first layer, where the second tube is configured to carry a second fluid.

[0159] In one example, the first tube is configured to heat the component and the second tube is configured to cool the component.

[0160] In one example, method 2000 further includes adding an additional layer over the first layer.

[0161] In one example, the additional layer is made of multiple materials.

[0162] In one example, method 2000 further includes configuring the material of the additional layer to create a component such that the substrate has a different conductivity from the top layer of the component.

[0163] In one example, the materials of the substrate and the first layer are selected from aluminum 6061, cast aluminum 356, cast aluminum 367, stainless steel 316L, aluminum alloy, aluminum 3003, aluminum 1050, nickel, inconel 625, inconel 718, Haynes C22, tantalum, cadmium, aluminum alloy, and pure aluminum.

[0164] In one example, method 2000 further includes removing the first tube after depositing the first layer to form a channel in the component.

[0165] In yet another general aspect, a machine-readable storage medium (e.g., a non-transitory storage medium) includes instructions that, when executed by a machine, cause the machine to perform operations including: machining a first groove along a surface of a substrate, where the first groove starts at a first end and ends at a second end, the first end and the second end being on the same side of the substrate, the first groove being configured to hold a first tube that covers the groove from the first end to the second end; and depositing a first layer over the substrate and the first tube using a solid-state additive manufacturing technique, the first layer completely covering the first tube, where the first tube is configured to carry fluid through the component.

[0166] Figure 21 is a block diagram of an example of machine 2100, on or by which one or more of the exemplary process implementations described herein can be implemented or controlled. In alternative implementations, machine 2100 can operate as a stand-alone device or can be connected (e.g., networked) to other machines. In a networked deployment, machine 2100 can operate in a server-client network environment as either a server machine, a client machine, or both a server machine and a client machine. In one example, machine 2100 can act as a peer in a peer-to-peer (P2P) (or other distributed) network environment. Additionally, although only a single machine 2100 is illustrated, the term "machine" should also be taken to include any collection of machines that, individually or jointly, execute a set (or multiple sets) of instructions to perform any one or more of the methods discussed herein, such as via cloud computing, software as a service (SaaS), or other computer cluster configurations.

[0167] Examples as described herein may include logic, multiple components or mechanisms, or may operate through logic, multiple components or mechanisms. A circuitry is a collection of circuits implemented in a tangible entity, which includes hardware (e.g., simple circuits, gates, logic). Circuitry eligibility may be flexible over time and with potential hardware variability. A circuitry includes components that can perform specified operations individually or in combination when operating. In one example, the hardware of a circuitry may be invariantly designed to perform a particular operation (e.g., hardwired). In one example, the hardware of a circuitry may include physically components that are variably connected (e.g., execution units, transistors, simple circuits), which include computer-readable media modified physically (e.g., magnetically, electrically, by movable placement of non-changing clustered particles) to encode instructions for a particular operation. In terms of connecting the physical components, the potential electrical properties of the hardware components are changed (e.g., changed from an insulator to a conductor, or vice versa). The instructions enable the embedded hardware (e.g., execution unit or loading mechanism) to establish components of the circuitry in the hardware via variable connections to perform portions of a particular operation when operating. Thus, when the device is operating, the computer-readable media is communicatively coupled to other components of the circuitry. In one example, any component in the physical components may be used in more than one component of more than one circuitry. For example, in an operating state, an execution unit may be used in a first circuit of a first circuitry at one point in time and reused by a second circuit in the first circuitry or by a third circuit in a second circuitry at different times.

[0168] A machine (e.g., a computer system) 2100 can include a hardware processor 2102 (e.g., a central processing unit (CPU), a hardware processor core, or any combination thereof), a graphics processing unit (GPU) 2103, a main memory 2104, and a static memory 2106. Some or all of these can communicate with each other via an interconnecting link (e.g., a bus) 2108. The machine 2100 can also include a display device 2110, an alphanumeric input device 2112 (e.g., a keyboard), and a user interface (UI) navigation device 2114 (e.g., a mouse). In one example, the display device 2110, the alphanumeric input device 2112, and the UI navigation device 2114 can be a touch screen display. The machine 2100 can additionally include a mass storage device (e.g., a drive unit) 2116, a signal generation device 2118 (e.g., a speaker), a network interface device 2120, and one or more sensors 2121 (such as a global positioning system (GPS) sensor, a compass, an accelerometer, or another sensor). The machine 2100 can include an output controller 2128, such as a serial (e.g., universal serial bus (USB)), parallel, or other wired or wireless (e.g., infrared (IR), near field communication (NFC), etc.) connection to communicate with or control one or more peripheral devices (e.g., a printer, a card reader).

[0169] The mass storage device 2116 can include a machine-readable medium 2122 on which is stored one or more sets of data structures or instructions 2124 (e.g., software) that are embodied or utilized by any one or more of the techniques or functions described herein. The instructions 2124, during execution by the machine 2100, can also reside, completely or at least partially, within the main memory 2104, within the static memory 2106, within the hardware processor 2102, or within the GPU 2103. In one example, one or any combination of the hardware processor 2102, the GPU 2103, the main memory 2104, the static memory 2106, or the mass storage device 2116 can constitute the machine-readable medium 2122.

[0170] Although the machine-readable medium 2122 is described as a single medium, the term "machine-readable medium" can include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) that are configured to store one or more instructions 2124.

[0171] The term "machine-readable medium" can include any medium that can store, encode, or carry instructions 2124 for execution by a machine 2100, causing the machine 2100 to perform any one or more of the techniques of the present disclosure, or that can store, encode, or carry data structures used by or associated with such instructions 2124. Examples of non-limiting machine-readable media can include solid-state memory, and optical and magnetic media. In one example, a mass of machine-readable media includes machine-readable media 2122 having a plurality of particles that have an invariant (e.g., stationary) mass. Thus, a mass of machine-readable media is not a transitory propagated signal. Specific examples of a mass of machine-readable media can include non-volatile memory such as semiconductor memory devices (e.g., electrically programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM)) and flash memory devices; magnetic disks such as internal hard disks and removable disks; magneto-optical disks; and CD-ROM and DVD-ROM disks.

[0172] Instructions 2124 can also be transmitted or received over a communication network 2126 via a network interface device 2120 using a transmission medium.

[0173] Throughout this specification, multiple instances may implement components, operations, or structures described as a single instance. Although individual operations of one or more methods are illustrated and described as separate operations, one or more of the individual operations can be performed simultaneously and there is no requirement that the operations be performed in the order shown. Structures and functions presented as separate components in an exemplary configuration can be implemented as a combined structure or component. Similarly, structures and functions presented as a single component can be implemented as separate components. These and other variations, modifications, additions, and improvements fall within the scope of the subject matter herein.

[0174] The embodiments illustrated herein are described in sufficient detail to enable those skilled in the art to practice the teachings disclosed herein. Other embodiments can be utilized and derived therefrom, such that structural and logical substitutions and changes can be made without departing from the scope of the present disclosure. Accordingly, the detailed description should not be construed as limiting, and the scope of the various embodiments is defined only by the appended claims, along with the full scope of equivalents to which such claims are entitled.

[0175] As used herein, the term "or" may be interpreted in an inclusive or exclusive sense. Additionally, multiple instances of resources, operations, or structures described herein may be provided as a single instance. Further, the boundaries between various resources, operations, modules, engines, and data stores are to some extent arbitrary, and specific operations are illustrated in the context of a particular illustrative configuration. Other function allocations may be envisioned and may fall within the scope of the various embodiments of the present disclosure. Generally, structures and functions that are presented as separate resources in an exemplary configuration may be implemented as a combined structure or resource. Similarly, structures and functions presented as a single resource may be implemented as separate resources. These and other variations, modifications, additions, and improvements fall within the scope of the embodiments of the present disclosure as expressed in the appended claims. Accordingly, the specification and drawings are to be regarded as illustrative rather than restrictive.

[0176] Other embodiments of the susceptor:

[0177] A1. A method of manufacturing a susceptor for a semiconductor manufacturing system, the method comprising:

[0178] Providing a substrate of a first material;

[0179] Machining a groove along a surface of the substrate, wherein the groove starts at a first end of the substrate and ends at a second end of the substrate;

[0180] Placing a tube over the groove, the tube covering the groove from the first end to the second end; and

[0181] Depositing a top layer of a second material over the substrate and the tube using a solid-state additive manufacturing technique, the top layer completely covering the tube, wherein the tube is configured to carry a fluid.

[0182] A2. The method according to claim A1, wherein when the susceptor is used in a semiconductor manufacturing system, the second material has better chemical resistance than the first material.

[0183] A3. The method according to claim A1, wherein the first material is an aluminum 6061 alloy.

[0184] A4. The method according to claim A1, wherein the second material is an aluminum alloy or pure aluminum.

[0185] A5. The method according to claim A1, wherein depositing the top layer comprises:

[0186] Providing a third material and a fourth material simultaneously during the solid-state additive manufacturing process; and

[0187] Combining the third material and the fourth material during the solid-state additive manufacturing to produce the second material deposited over the substrate.

[0188] A6. The method according to claim A5, wherein the third material is aluminum and the fourth material is aluminum fluoride.

[0189] A7. The method according to claim A5, wherein depositing the top layer further comprises:

[0190] adding an adhesive material during the solid-state additive manufacturing process.

[0191] A8. The method according to claim A7, wherein the adhesive material is aluminum fluoride.

[0192] A9. The method according to claim A1, wherein the first end and the second end are located on the same side of the substrate.

[0193] A10. The method according to claim A1, wherein the first material has a higher coefficient of linear thermal expansion (CTE) than the second material.

[0194] A11. The method according to claim A1, wherein the tube is configured to direct a heating material through the pedestal during operation of the semiconductor manufacturing system.

[0195] A12. The method according to claim A1, wherein the solid-state additive manufacturing technique comprises MELD, which uses a rotating head to apply pressure to the first material of the substrate, causing the first material to plastify without reaching the melting point of the first material.

[0196] A13. A system for manufacturing a showerhead for a semiconductor manufacturing system, the system comprising:

[0197] a solid-state additive manufacturing device;

[0198] a memory including instructions; and

[0199] one or more computer processors, wherein the instructions, when executed by the one or more computer processors, cause the system to perform operations including the following:

[0200] using the solid-state additive manufacturing device to deposit a second material top layer on a first material substrate to produce a pedestal, the substrate having a groove along the surface of the substrate, wherein the groove starts at a first end of the substrate and terminates at a second end of the substrate, the groove having a tube covering the groove from the first end to the second end, wherein the top layer completely covers the tube configured to carry a fluid.

[0201] A14. The system according to claim A13, wherein when the pedestal is used in a semiconductor manufacturing system, the second material has better chemical resistance than the first material.

[0202] A15. The system according to claim A13, wherein the first material is aluminum 6061 alloy.

[0203] A16. The system according to claim A13, wherein the second material is an aluminum alloy or pure aluminum.

[0204] A17. The system according to claim A13, wherein depositing the top layer comprises:

[0205] simultaneously providing a third material and a fourth material during a solid-state additive manufacturing process; and

[0206] combining the third material and the fourth material during the solid-state additive manufacturing to produce a second material deposited above the substrate.

[0207] A18. The system according to claim A17, wherein the third material is aluminum and the fourth material is aluminum fluoride.

[0208] A19. The system according to claim A17, wherein depositing the top layer further comprises:

[0209] adding an adhesive material during the solid-state additive manufacturing process.

[0210] A20. The system according to claim A19, wherein the adhesive material is aluminum fluoride.

[0211] Other embodiments of manufacturing a component with embedded features:

[0212] B1. A method of manufacturing a component with embedded features, the method comprising:

[0213] machining a first groove along a surface of a substrate, wherein the first groove starts at a first end and terminates at a second end, and the first end and the second end are on the same side of the substrate;

[0214] placing a first tube on the first groove, the first tube covering the first groove from the first end to the second end; and

[0215] depositing a first layer above the substrate and the first tube using solid-state additive manufacturing techniques, the first layer completely covering the first tube, wherein the first tube is configured to carry a first fluid.

[0216] B2. The method according to claim B1, wherein the solid-state additive manufacturing technique comprises MELD, and the MELD uses a rotating head to apply pressure to the material of the first layer, causing the material to be plasticized without reaching the melting point of the material of the first layer.

[0217] B3. The method according to claim B1, further comprising:

[0218] Before placing the first layer, machining a second groove along the surface of the substrate; and

[0219] Before placing the first layer, placing a second tube on the second groove, wherein the second tube is configured to carry a second fluid.

[0220] B4. The method according to claim B3, wherein the first tube is configured to heat the component, and the second tube is configured to cool the component.

[0221] B5. The method according to claim B1, further comprising:

[0222] Adding an additional layer on top of the first layer.

[0223] B6. The method according to claim B5, wherein the additional layer is made of a plurality of materials.

[0224] B7. The method according to claim B6, further comprising:

[0225] Configuring the materials of the additional layer to create a component such that the substrate has a different conductivity from the top layer of the component.

[0226] B8. The method according to claim B1, wherein the materials of the substrate and the first layer are selected from the group consisting of aluminum 6061, cast aluminum 356, cast aluminum 367, stainless steel 316L, aluminum alloy, aluminum 3003, aluminum 1050, nickel, inconel 625, inconel 718, hastelloy C22, tantalum, cadmium, and pure aluminum.

[0227] B9. A system for manufacturing a component with embedded features, the system comprising:

[0228] A solid-state additive manufacturing device;

[0229] A memory including instructions; and

[0230] One or more computer processors, wherein when the instructions are executed by the one or more computer processors, the system performs operations including the following:

[0231] Using the solid-state additive manufacturing device to deposit a first layer on a substrate, the substrate having a first groove along the surface of the substrate, wherein the first groove starts at a first end and ends at a second end, the first end and the second end being on the same side of the substrate, the first groove having a first tube covering the first groove from the first end to the second end, wherein the deposit completely covers the first tube, and wherein the first tube is configured to carry a first fluid.

[0232] B10. The system according to claim B9, wherein the solid-state additive manufacturing technique includes MELD, which applies pressure to the material of the first layer using a rotating head, causing the material to plasticize without reaching the melting point of the first-layer material.

[0233] B11. The system according to claim B9, wherein the instructions further cause the one or more computer processors to perform operations including:

[0234] Adding an additional layer on top of the first layer.

[0235] B12. The system according to claim B11, wherein the additional layer is made of multiple materials.

[0236] B13. The system according to claim B12, wherein the material of the additional layer is configured to produce the component such that the component has a different electrical conductivity from the top layer of the component.

[0237] B14. The system according to claim B9, wherein the materials of the substrate and the first layer are selected from aluminum 6061, cast aluminum 356, cast aluminum 367, stainless steel 316L, aluminum alloy, aluminum 3003, aluminum 1050, nickel, Inconel 625, Inconel 718, Hastelloy C22, tantalum, cadmium, and pure aluminum.

[0238] Other embodiments for manufacturing a component with an embedded channel:

[0239] C1. A method for manufacturing a component with an embedded channel, the method comprising:

[0240] Machining a first groove along the surface of the base of a first material;

[0241] Filling the first groove with a second material;

[0242] Depositing a first layer of a third material over the base and the filled first groove using a solid-state additive manufacturing technique, the first layer covering the first groove; and

[0243] After depositing the first layer, creating an embedded channel in the component by removing the second material.

[0244] C2. The method according to claim C1, wherein the second material is a boiler-type plastic, and wherein removing the second material includes:

[0245] Placing the component in an oven to evaporate the boiler-type plastic.

[0246] C3. The method according to claim C1, wherein the second material is a water-soluble salt, and wherein removing the second material includes:

[0247] Immerse the component in water to dissolve the water-soluble salts.

[0248] C4. The method according to claim C1, wherein the solid-state additive manufacturing technique includes MELD, which uses a rotating head to apply pressure to a first material and a second material, causing the first material to plasticize without reaching its melting point.

[0249] C5. The method according to claim C1, further comprising:

[0250] Adding an additional layer on top of the first layer.

[0251] C6. The method according to claim C5, wherein the additional layer is made of multiple materials.

[0252] C7. The method according to claim C6, further comprising:

[0253] Configuring the materials of the additional layer to create a component such that the base has a different electrical conductivity from the top layer of the component.

[0254] C8. The method according to claim C1, wherein the first material of the base is selected from aluminum 6061, cast aluminum 356, cast aluminum 367, stainless steel 316L, aluminum alloy, aluminum 3003, aluminum 1050, nickel, Inconel 625, Inconel 718, Hastelloy C22, tantalum, cadmium, and pure aluminum.

[0255] C9. The method according to claim C1, wherein the first material is aluminum 6061 alloy and the third material is aluminum alloy or pure aluminum.

[0256] C10. The method according to claim C1, wherein the third material is nickel.

[0257] C11. The method according to claim C1, wherein the third material is tantalum.

[0258] C12. A system for manufacturing a component with embedded channels, the system comprising:

[0259] A solid-state additive manufacturing device;

[0260] A memory including instructions; and

[0261] One or more computer processors, wherein the instructions, when executed by the one or more computer processors, cause the system to perform operations including the following:

[0262] Using a solid-state additive manufacturing apparatus, a first layer of a third material is deposited on a base of a first material having a first groove filled with a second material, wherein a component having an embedded channel is produced by removing the second material after deposition.

[0263] C13. The system according to claim C12, wherein the second material is a boiler-type plastic, and wherein removing the second material comprises:

[0264] Placing the component in an oven to evaporate the boiler-type plastic.

[0265] C14. The system according to claim C12, wherein the second material is a water-soluble salt, and wherein removing the second material comprises:

[0266] Immersing the component in water to dissolve the water-soluble salt.

[0267] C15. The system according to claim C12, wherein the solid-state additive manufacturing technique comprises MELD, and MELD applies pressure to the first material and the second material using a rotating head, causing the first material to plastify without reaching its melting point.

[0268] C16. The system according to claim C12, wherein the instructions further cause the one or more computer processors to perform operations comprising:

[0269] Adding additional layers on top of the first layer.

[0270] C17. The system according to claim C16, wherein the additional layers are made of multiple materials.

[0271] C18. The system according to claim C17, wherein the materials of the additional layers are configured to produce the component such that the base has a different electrical conductivity from the top layer of the component.

[0272] C19. The system according to claim C12, wherein the first material of the base is selected from aluminum 6061, cast aluminum 356, cast aluminum 367, stainless steel 316L, aluminum alloy, aluminum 3003, aluminum 1050, nickel, Inconel 625, Inconel 718, Hastelloy C22, tantalum, cadmium, and pure aluminum.

[0273] C20. The system according to claim C12, wherein the first material is an aluminum 6061 alloy and the third material is an aluminum alloy or pure aluminum.

Claims

1. A method of manufacturing a showerhead for a semiconductor manufacturing system, the method comprises: drilling a first hole in a panel made of a first material, the first hole having a first diameter; coating the first hole and the panel with a second material to cover the first hole and the panel with the second material; drilling a second hole concentric with the first hole to obtain a component having a hole coated with the second material, the second hole having a second diameter smaller than the first diameter; and manufacturing the showerhead using the component, wherein gas can be delivered through the second hole of the panel; wherein the first material and the second material are selected from the group consisting of metals and metal alloys, and the first material is different from the second material; and wherein coating the first hole comprises applying solid-state additive manufacturing on the first hole to fill the first hole with the second material to a predetermined depth.

2. The method according to claim 1, wherein, the second diameter is half of the first diameter.

3. The method according to claim 1, wherein, the first material is an aluminum alloy with an aluminum content of less than 98.9 mass percent, and the second material is pure aluminum or an aluminum alloy with an aluminum content of at least 99 mass percent.

4. The method according to claim 1, wherein, the second material is nickel.

5. The method according to claim 1, wherein, the second material is tantalum.

6. The method according to claim 1, wherein, the second material is an austenitic nickel-chromium-molybdenum-tungsten alloy.

7. The method according to claim 1, wherein, the panel is flat.

8. The method according to claim 1, wherein, the panel is curved.

9. The method according to claim 1, wherein, the solid-state additive manufacturing comprises friction stir welding additive manufacturing, which uses a rotating head to apply pressure to the first material of the panel, causing the first material to plasticize without reaching the melting point of the first material.

10. The method according to claim 1, wherein, when operating in a semiconductor manufacturing process, the second material has a longer lifespan than the first material, and the second material avoids contamination by covering the first material to prevent exposure to reactions in the chamber during the semiconductor manufacturing process.

11. A system for manufacturing a showerhead for a semiconductor manufacturing system, the system comprises: solid-state additive manufacturing equipment; a memory containing instructions; and one or more computer processors, wherein the instructions, when executed by the one or more computer processors, cause the system to perform operations, the operations including: coating a panel made of a first material with a second material, the panel having a first hole with a first diameter, the coating covering the first hole and the panel with the second material, wherein the showerhead is manufactured by drilling a second hole concentric with the first hole, resulting in the showerhead having the first hole coated with the second material, the second hole having a second diameter smaller than the first diameter; wherein the first material and the second material are selected from the group consisting of metals and metal alloys, and wherein the first material is different from the second material; and wherein the cladding comprises applying solid-state additive manufacturing over the first hole to fill the first hole with the second material to a predetermined depth.

12. The system according to claim 11, wherein, the second diameter is half of the first diameter.

13. The system according to claim 11, wherein, the first material is an aluminum alloy with an aluminum content of less than 98.9 mass percent, and the second material is pure aluminum or an aluminum alloy with an aluminum content of at least 99 mass percent.

14. The system according to claim 11, wherein, the second material is nickel.

15. The system according to claim 11, wherein, the second material is tantalum.

16. The system according to claim 11, wherein, the second material is an austenitic nickel-chromium-molybdenum-tungsten alloy.

17. The system according to claim 11, wherein, the solid-state additive manufacturing comprises friction stir welding additive manufacturing, and the friction stir welding additive manufacturing applies pressure to the first material of the panel using a rotating head, thereby causing the first material to plasticize without reaching the melting point of the first material.

18. The system according to claim 11, wherein, when operating in a semiconductor manufacturing process, the second material has a longer lifespan than the first material, and wherein the second material avoids contamination by covering the first material to prevent exposure to reactions in the chamber during the semiconductor manufacturing process.

19. A showerhead for a semiconductor manufacturing system made by a method, the method comprising: drilling a first hole in a panel made of a first material, the first hole having a first diameter; cladding the first hole and the panel with a second material to cover the first hole and the panel with the second material; drilling a second hole concentric with the first hole to obtain a component having a hole coated with the second material, the second hole having a second diameter smaller than the first diameter; and manufacturing the showerhead using the component, wherein gas can be delivered through the second hole of the panel; wherein the first material and the second material are selected from the group consisting of metals and metal alloys, and wherein the first material is different from the second material; and wherein cladding the first hole comprises applying solid-state additive manufacturing over the first hole to fill the first hole with the second material to a predetermined depth.

20. The showerhead according to claim 19, wherein, the diameter of the first hole is in the range of 60 μm to 3 mm, the diameter of the second hole is in the range of 40 μm to 0.5 mm, and the difference between the diameters of the holes is at least 10 μm.

21. The showerhead according to claim 19, wherein, the thickness of the coating on the surface of the hole of the second material is in the range of 50 μm to 2 mm.

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