Combinable semiconductor circuit module

Abstract

The present invention relates to a module of a combinable semiconductor circuit, comprising an inverter module and a PFC module, wherein a driving circuit and an inverter circuit are arranged inside the inverter module, pins of the inverter module are arranged on both sides of the inverter module, a first IGBT tube, a first FRD and a second FRD are arranged inside the PFC module, a GFC pin of the PFC module is connected to the gate of the first IGBT tube, a P pin of the PFC module is connected to the cathode of the first FRD, a PFC pin of the PFC module is connected to the anode of the first FRD, and an NPFC pin of the PFC module is connected to the emitter of the first IGBT tube, and the four pins of the PFC module are arranged in pairs on both sides of the PFC module, and the PFC module is detachably arranged on one side of the inverter module in an overlapping manner, and the four pins of the PFC module are respectively connected to the four pins of the inverter module. In this way, a detachable combination of the PFC module and the inverter module is achieved, so that the inverter module or a combination of the two can be flexibly selected according to the needs of a specific controller, thereby reducing the cost of the controller and facilitating the miniaturization of the controller.

Description

Technical Field

[0001] The invention relates to a module of a combinable semiconductor circuit, belonging to the technical field of semiconductor circuit application. Background Art

[0002] Semiconductor circuits are power drive products that combine power electronics and integrated circuit technology. The semiconductor circuit integrates 6-channel inverter circuits and drive circuits. For some application scenarios, it also integrates PFC and bridge stack circuits. Applying semiconductor circuits that integrate multiple circuits to a single scenario, such as applying semiconductor circuits that integrate PFC and bridge stacks to scenarios that do not require PFC and rectification, will increase the cost of the equipment. Summary of the invention

[0003] The technical problem to be solved by the present invention is to solve the problem of increasing the cost of applying the semiconductor circuit of the existing integrated module to the scenario with single functional requirements.

[0004] Specifically, the present invention discloses a module of a combinable semiconductor circuit, comprising:

[0005] An inverter module, wherein a drive circuit and an inverter circuit are arranged inside the inverter module, and pins of the inverter module are arranged on both sides of the inverter module;

[0006] A PFC module, wherein a first IGBT tube, a first FRD and a second FRD are arranged inside the PFC module, wherein an anode of the first FRD and a collector of the first IGBT tube and a cathode of the second FRD are connected in common, an anode of the second FRD is connected to an emitter of the first IGBT tube, a GFC pin of the PFC module is connected to a gate of the first IGBT tube, a P pin of the PFC module is connected to a cathode of the first FRD, a PFC pin of the PFC module is connected to an anode of the first FRD, and an NPFC pin of the PFC module is connected to an emitter of the first IGBT tube, and these four pins of the PFC module are arranged in pairs on both sides of the PFC module;

[0007] The PFC module is detachably arranged in an upper and lower overlapping manner on one side of the inverter module, and four pins of the PFC module are respectively connected to four pins of the inverter module.

[0008] Optionally, the inverter circuit includes six IGBT tubes of upper and lower bridge arms, the drive circuit includes a drive chip, the drive chip outputs seven drive signals, one of which drives the first IGBT tube to work through the GFC pin of the PFC module connected to a pin of the inverter module, and the other three pins of the four pins of the inverter module are empty pins.

[0009] Optionally, the four pins of the inverter module are spaced at the same distance from the four pins connected to the PFC module, and the length of the pins of the inverter module is greater than the length of the pins of the PFC module.

[0010] Optionally, the semiconductor circuit module also includes a rectifier module, which has a bridge rectifier circuit inside. The rectifier module is detachably overlapped and arranged on the other side of the inverter module. The four pins of the rectifier module are respectively connected to the other four pins of the inverter module, and the other four pins of the inverter module are empty pins.

[0011] Optionally, the other four pins of the inverter module are at the same distance from the four pins connected to the rectifier module, and the length of the pins of the inverter module is greater than the length of the pins of the rectifier module.

[0012] Optionally, the inverter module includes:

[0013] A circuit substrate, wherein a circuit wiring layer is disposed on the surface of the circuit substrate, and the circuit board wiring layer includes a plurality of component mounting positions and a plurality of pads;

[0014] A plurality of electronic components, including a driving chip constituting a driving circuit and six IGBT tubes and six FRDs constituting an inverter circuit, and the plurality of electronic components are mounted on a circuit substrate;

[0015] A plurality of pins, wherein the plurality of pins are arranged on both sides of the circuit substrate, and one end of the plurality of pins is connected to the circuit wiring layer;

[0016] The sealing layer covers at least one side of the circuit wiring layer of the circuit substrate and covers a plurality of electronic components, and the other ends of the plurality of pins are exposed from the sealing layer.

[0017] Optionally, three upper bridge arm IGBT tubes and three lower bridge arm IGBT tubes among the six IGBT tubes are respectively arranged on both sides of the circuit substrate, six FRDs are correspondingly arranged between the six IGBT tubes, and the driving chip is arranged away from the IGBT tubes.

[0018] Optionally, the circuit substrate includes a heat dissipation substrate, an insulating layer, and a circuit wiring layer connected to each other.

[0019] Optionally, the heat dissipation substrate is thicker than the insulation layer and the circuit wiring layer.

[0020] Optionally, the semiconductor circuit further comprises a plurality of bonding wires, and the bonding wires connect the circuit wiring layer and the plurality of electronic components and between the plurality of electronic components.

[0021] The module of the semiconductor circuit of the present invention comprises an inverter module and a PFC module, wherein a driving circuit and an inverter circuit are arranged inside the inverter module, pins of the inverter module are arranged on both sides of the inverter module, a first IGBT tube, a first FRD and a second FRD are arranged inside the PFC module, wherein an anode of the first FRD and a collector of the first IGBT tube and a cathode of the second FRD are commonly connected, an anode of the second FRD is connected to an emitter of the first IGBT tube, a GFC pin of the PFC module is connected to a gate of the first IGBT tube, a P pin of the PFC module is connected to a cathode of the first FRD, a PFC pin of the PFC module is connected to an anode of the first FRD, an NPFC pin of the PFC module is connected to an emitter of the first IGBT tube, the four pins of the PFC module are arranged in pairs on both sides of the PFC module, the PFC module is detachably arranged on one side of the inverter module in an overlapping manner, and the four pins of the PFC module are respectively connected to the four pins of the inverter module. In this way, a detachable combination of the PFC module and the inverter module is achieved, so that the inverter module or a combination of the two can be flexibly selected according to the needs of the specific controller, thereby reducing the cost of the controller and facilitating the miniaturization of the controller. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a plan view schematic diagram of an inverter module without a sealing layer according to an embodiment of the present invention;

[0023] Figure 2A and Figure 2B They are respectively plan schematic diagrams of a PFC module and a rectifier module according to an embodiment of the present invention without a sealing layer;

[0024] Figure 3 FIG. 1 is a plan view schematically showing a semiconductor circuit of the present invention;

[0025] Figure 4 is a side view of a semiconductor circuit of the present invention;

[0026] FIG. 5A to FIG. 5C They are respectively schematic diagrams of the internal circuits of the inverter module, the PFC module and the rectifier module in the embodiments of the present invention.

[0027] Reference numerals:

[0028] Inverter module 100 , PFC module 200 , rectifier module 300 , pin 10 , sealing layer 20 , IGBT tube 41 , FRD 42 , first IGBT tube 44 , first FRD 45 , second FRD 46 , rectifier diode 43 , driver chip 50 , bonding wire 60 , circuit substrate 70 . DETAILED DESCRIPTION

[0029] It should be noted that, in the case where the structures or functions do not conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below based on examples.

[0030] The semiconductor circuit mentioned in the present invention is a circuit module that integrates power switch devices and high-voltage drive circuits, and is sealed and packaged on the outside. It is widely used in the field of power electronics, such as frequency converters for driving motors, various inverter voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency home appliances, etc. The semiconductor circuit here has many other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuits, power semiconductor modules, power modules, etc.

[0031] The combinable semiconductor circuit module proposed by the present invention is as follows Figures 1 to 4As shown, the semiconductor circuit module includes an inverter module 100 and a PFC module 200. The inverter module 100 is provided with a drive circuit and an inverter circuit, and the pins 10 of the inverter module 100 are arranged on both sides of the inverter module 100. The drive circuit is mainly composed of a drive chip 50, in which a drive unit circuit for driving the switch tube of the inverter circuit is arranged. The inverter circuit is mainly composed of 6 switch tubes of the upper and lower bridge arms, such as IGBT tube 41 (Insulated Gate Bipolar Transistor) and FRD42 tube (Fast Recovery Diode), and at least 6 corresponding drive unit circuits are arranged inside the drive circuit to drive the 6 IGBT tubes 41 to work. The strong current and weak current pins of the pins 10 of the inverter circuit are generally arranged on both sides of the inverter module 100, respectively, to achieve the maximum separation of strong and weak currents and reduce the interference of the strong current pins on the weak current pins. The strong current pins are mainly pins connected to the three output ends of the inverter circuit, floating power supply pins, bus power supply pins, etc., and the weak current pins are mainly control signal input pins connected to the drive circuit, low voltage power supply pins, etc. The PFC module 200 is provided with a first IGBT tube 44, a first FRD45 and a second FRD46, wherein the anode of the first FRD45 and the collector of the first IGBT tube 44 and the cathode of the second FRD46 are connected in common, the anode of the second FRD46 is connected to the emitter of the first IGBT tube 44, the GFC pin of the PFC module 200 is connected to the gate of the first IGBT tube 44, the P pin of the PFC module 200 is connected to the cathode of the first FRD45, the PFC pin of the PFC module 200 is connected to the anode of the first FRD45, the NPFC pin of the PFC module 200 is connected to the emitter of the first IGBT tube 44, and these four pins of the PFC module 200 are arranged in pairs on both sides of the PFC module 200. The two low voltage pins of the PFC module 200, namely the GFC pin and the NPFC pin, and the two high voltage pins, namely the P pin and the PFC pin, are generally arranged on both sides of the PFC module 200, respectively, so as to separate the high voltage and the low voltage as much as possible.

[0032] The PFC module 200 is detachably arranged on one side of the inverter module 100 in an overlapping manner. Figure 3As shown, the PFC module 200 is arranged above the rightmost side of the inverter module 100, and the four pins of the PFC module 200 are respectively connected to the four pins 10 of the inverter module 100. In this way, the inverter module 100 and the PFC module 200 can be combined, and the inverter module 100 also has the PFC function. It can be applied to the controller circuit that also needs the PFC function, and in the controller circuit that does not need the PFC function, such as the low-power motor drive circuit, the PFC module 200 can be disassembled and the inverter module 100 can be used alone, which can save the PFC module 200 and reduce the cost of the entire controller.

[0033] In some embodiments of the present invention, Figures 1 to 5C As shown, six IGBT tubes 41 are arranged inside the inverter circuit, and the driving chip 50 is provided with a driving unit circuit that can output seven-channel driving signals. In addition to driving the six IGBT tubes 41, the remaining driving signal is output through a pin 10 of the inverter module 100, and the pin 10 is connected to the GFC pin of the PFC module 200 to drive the first IGBT tube 44 of the PFC module 200 to work. The other three pins of the inverter module 100 connected to the PFC module 200 are empty pins. Thus, the driving signal in the inverter module 100 is directly used to drive the PFC module 200 to work, and there is no need to set up a driving circuit separately in the controller when it is applied, so that the PCB wiring of the controller can be reduced, which is conducive to the miniaturization of the controller. The other three pins of the inverter circuit are empty pins. By connecting to the PFC module 200, these three empty pins are directly used as the pin functions of the PFC module 200 on the PCB board of the controller, thereby realizing the area of ​​a single inverter module 100 on the PCB board while realizing the two functions of inverter and PFC, thereby effectively reducing the PCB area, which is further conducive to the miniaturization of the controller.

[0034] Specifically, in some embodiments of the present invention, the four pins of the inverter module 100 are spaced at the same distance from the four pins connected to the PFC module 200, and the length of the pins of the inverter module 100 is greater than the length of the pins of the PFC module 200. Figure 3 and Figure 4As shown, the spacing of the pins of the PFC module 200 is completely the same as the spacing of the pins of the inverter module 100, so that when stacked on the inverter module 100, the pin surface of the PFC module 200 is completely in contact with the surface of the pins of the inverter module 100, and because the extended length of the pins of the inverter module 100 is greater than the extended length of the pins of the PFC module 200, it is convenient to connect the stacked pins, such as welding, to achieve reliable electrical connection between the two. During the specific connection, the ends of the pins of the PFC module 200 can be shaped so that when the two modules are stacked on each other, a part of the ends are completely in contact with the surface of the pins of the inverter module 100, so that the two are convenient to weld.

[0035] In some embodiments of the present invention, the semiconductor circuit module further includes a rectifier module 300, a bridge rectifier circuit is disposed inside the rectifier module 300, and the rectifier module 300 is detachably disposed on the other side of the inverter module 100 in an overlapping manner, and the four pins of the rectifier module 300 are respectively connected to the other four pins of the inverter module 100, and the other four pins of the inverter module 100 are empty pins. Figures 2B to 5B As shown, the four pins 10 of the rectifier module 300 are respectively connected to the four ports of the bridge rectifier circuit, and the bridge rectifier circuit is composed of four rectifier diodes 43. When the rectifier module 300 is stacked up and down on the other end of the inverter module 100, the four empty pins 10 of the inverter module 100 connected thereto are directly used for the pin 10 function of the rectifier module 300 on the PCB board of the controller, thereby further realizing the area occupied by a single inverter module 100 on the PCB board and increasing the function of the rectifier circuit, thereby further effectively retrieving the PCB area, which is conducive to the miniaturization of the controller.

[0036] In order to further facilitate the mutual fixation and connection between the rectifier module 300 and the inverter module 100, similar to the PFC module 200, the other four pins of the inverter module 100 have the same spacing as the four pins connected to the rectifier module 300, and the length of the pins of the inverter module 100 is greater than the length of the pins of the rectifier module 300. Therefore, when the rectifier module 300 is stacked on the inverter module 100, the surface of the end of the pin of the rectifier module 300 completely overlaps with the surface of the pin of the inverter module 100, so that the two can be welded to achieve reliable electrical connection.

[0037] In some embodiments of the present invention, Figure 1 , Figure 3As shown, the inverter module 100 specifically includes a circuit substrate 70, a plurality of electronic components, a plurality of pins 10 and a sealing layer 20. A circuit wiring layer is provided on the surface of the circuit substrate 70, and the circuit board wiring layer includes a plurality of component mounting positions and a plurality of pads; the plurality of electronic components include a driving chip 50 constituting a driving circuit and six IGBT tubes 41 and six FRDs 42 constituting an inverter circuit, and the plurality of electronic components are mounted on the circuit substrate 70; the plurality of pins 10 are provided on both sides of the circuit substrate 70, and one end of the plurality of pins 10 is connected to the circuit wiring layer; the sealing layer 20 covers at least one side of the circuit wiring layer of the circuit substrate 70, and covers the plurality of electronic components, and the other ends of the plurality of pins 10 are exposed from the sealing layer 20.

[0038] The circuit substrate 70 is generally composed of a heat dissipation substrate, an insulating layer and a circuit wiring layer connected to each other. The heat dissipation substrate can be made of metal materials or other materials. For example, the heat dissipation substrate can be made of a rectangular plate made of aluminum such as 1100, 5052, etc. Its thickness is much thicker than other layers, generally 0.8mm to 2mm, and the commonly used thickness is 1.5mm. The thickness of the insulating layer is relatively thinner than the heat dissipation substrate, generally 50um to 150um, and commonly 110um. The insulating layer can be made of resin materials such as epoxy resin, and fillers such as aluminum oxide and aluminum carbide can be filled inside the resin material to improve thermal conductivity. In order to improve thermal conductivity, the shape of these fillers can be angular. In order to avoid the risk of the filler damaging the contact surface of the electronic component arranged on its surface, the filler can be spherical, angular or a mixture of angular and spherical. The circuit wiring layer can be formed by etching copper foils respectively arranged on the surface of the insulating layer, or it can be formed by printing a paste-like conductive medium. The conductive medium can be a conductive material such as graphene, solder paste, and silver glue. The thickness of the circuit wiring layer is roughly the same as that of the insulating layer and is also relatively thin, such as about 70 um. A plurality of component mounting positions are arranged on the surface of the circuit wiring layer to mount a plurality of electronic components.

[0039] The plurality of electronic components include power devices such as IGBT tube 41 and FRD 42 and driver chip 50 that constitute the inverter circuit and the drive circuit, and also include passive devices such as resistors and capacitors. Figure 1 and Figure 5A As shown, the three-way switch tubes and FRD42 constituting the upper and lower bridge arms of the inverter circuit are respectively arranged on both sides of the connection pin 10 of the circuit substrate 70, and the FRD42 is arranged between the upper and lower rows of IGBT tubes 41, and is arranged close to the corresponding IGBT tubes 41, and the driving chip 5050 is arranged away from the IGBT tubes 41. Figure 1In the figure, the driver chip 50 is arranged on the left side far away from the inverter circuit where the IGBT tube 41 is located, and the inverter circuit is arranged on the right side, with a certain distance between the two, so that the inverter circuit working with high current and large flow can minimize the interference to the low voltage area of ​​the driver chip 50, which is beneficial to improving the working stability of the entire inverter module 100.

[0040] In some embodiments of the present invention, the inverter module 100 is also provided with a plurality of bonding wires 60, which are connected between electronic components and between electronic components and circuit wiring layers. Specifically, the bonding wires 60 are connected between the gate bonding area on the surface of the IGBT tube 41 and the pad of the circuit wiring layer, the bonding wires 60 are connected between the driving bonding area and the pad of the driver chip 50, the driving end of the driver chip 50 is connected to the gate of the IGBT tube 41 through the routing of the circuit wiring layer, the bonding wires 60 are connected between the anode bonding area of ​​the FRD42 and the emitter bonding area of ​​the IGBT tube 41, the bonding wires 60 are connected between the control end bonding area of ​​the driver chip 50 and the pad of the circuit wiring layer, and so on, so as to finally form the line connection of the inverter circuit.

[0041] The sealing layer 20 can be formed of resin, and can be molded by using a thermosetting resin through a transfer mold or a thermoplastic resin through an injection mold. The sealing layer 20 has two packaging structures. One is that the sealing layer 20 covers the surface and back of the circuit substrate 70, that is, covers one side of the electronic components set on the circuit substrate 70 and the back of the circuit substrate 70, and the sealing layer 20 covers the partial length of the end of the pin 10 connected to the circuit substrate 70. This packaging is a full-coverage method of the sealing layer 20; in another packaging method, the sealing layer 20 covers the upper surface of the circuit substrate 70, that is, covers the surface of the circuit substrate 70 and the electronic components, and the sealing layer 20 covers the partial length of the end of the pin 10 connected to the circuit substrate 70, and the back of the circuit substrate 70, that is, the heat dissipation surface, is exposed to the sealing layer 20, thereby forming a semi-coverage method of the sealing layer 20. For the full-coverage method, the back of the circuit substrate 70 can be provided with a texture, which can effectively strengthen the bonding strength with the sealing layer 20, so that the two are not easy to separate. For the semi-encapsulation method, the back of the circuit substrate 70 may not be textured. When the semiconductor circuit is used and installed, a heat sink (not shown in the figure) may be provided on the back of the circuit substrate 70 so that the surface of the heat sink is in close contact with the surface of the circuit substrate 70, thereby better dissipating the heat generated by the power device through the heat sink.

[0042] The internal structures of the PFC module 200 and the rectifier module 300 are similar to those of the inverter module 100, and also include a circuit substrate, power devices arranged on the circuit substrate, pins connected to the circuit substrate, and a sealing layer covering at least one side of the electronic components of the circuit substrate 70. No further details will be given here.

[0043] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0044] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0045] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0046] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0047] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0048] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A combinable semiconductor circuit module, characterized in that: include: An inverter module, wherein a drive circuit and an inverter circuit are disposed inside the inverter module, and pins of the inverter module are disposed on both sides of the inverter module; A PFC module, wherein a first IGBT tube, a first FRD and a second FRD are arranged inside the PFC module, wherein an anode of the first FRD and a collector of the first IGBT tube and a cathode of the second FRD are connected in common, an anode of the second FRD is connected to an emitter of the first IGBT tube, a GFC pin of the PFC module is connected to a gate of the first IGBT tube, a P pin of the PFC module is connected to a cathode of the first FRD, a PFC pin of the PFC module is connected to an anode of the first FRD, and an NPFC pin of the PFC module is connected to an emitter of the first IGBT tube, and these four pins of the PFC module are arranged in pairs on both sides of the PFC module; The PFC module is detachably arranged on one side of the inverter module in an overlapping manner, and four pins of the PFC module are respectively connected to four pins of the inverter module; The inverter circuit includes six IGBT tubes of upper and lower bridge arms, and the drive circuit includes a drive chip, which outputs seven drive signals, one of which drives the first IGBT tube to work through the GFC pin of the PFC module connected to a pin of the inverter module, and the other three pins of the four pins of the inverter module are empty pins; The four pins of the inverter module are at the same distance from the four pins connected to the PFC module, and the length of the pins of the inverter module is greater than the length of the pins of the PFC module; It also includes a rectifier module, wherein a bridge rectifier circuit is arranged inside the rectifier module, and the rectifier module is detachably arranged on the other side of the inverter module in an overlapping manner, and four pins of the rectifier module are respectively connected to the other four pins of the inverter module in an upper and lower manner, and the other four pins of the inverter module are empty pins; The other four pins of the inverter module have the same spacing as the four pins connected to the rectifier module, and the length of the pins of the inverter module is greater than the length of the pins of the rectifier module.

2. The semiconductor circuit module according to claim 1, characterized in that: The inverter module comprises: A circuit substrate, wherein a circuit wiring layer is disposed on the surface of the circuit substrate, and the circuit wiring layer includes a plurality of component mounting positions and a plurality of pads; A plurality of electronic components, including a driving chip constituting a driving circuit and six IGBT tubes and six FRDs constituting an inverter circuit, and the plurality of electronic components are mounted on the circuit substrate; A plurality of pins, wherein the plurality of pins are arranged on both sides of the circuit substrate, and one end of the plurality of pins is connected to the circuit wiring layer; A sealing layer covers at least one side of the circuit wiring layer of the circuit substrate and covers the plurality of electronic components, and the other ends of the plurality of pins are exposed from the sealing layer.

3. The semiconductor circuit module according to claim 2, characterized in that: Three upper bridge arm IGBT tubes and three lower bridge arm IGBT tubes of the six IGBT tubes are respectively arranged on both sides of the circuit substrate, the six FRDs are correspondingly arranged between the six IGBT tubes, and the driving chip is arranged away from the IGBT tubes.

4. The semiconductor circuit module according to claim 2, characterized in that: The circuit substrate includes a heat dissipation substrate, an insulating layer, and the circuit wiring layer which are connected to each other.

5. The semiconductor circuit module according to claim 4, characterized in that: The heat dissipation substrate has a thickness greater than that of the insulating layer and the circuit wiring layer.

6. The semiconductor circuit module according to claim 2, characterized in that: The semiconductor circuit further includes a plurality of bonding wires connecting the circuit wiring layer and the plurality of electronic components and between the plurality of electronic components.

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