Focusing Ring and Substrate Processing Apparatus Including the Same

Abstract

The present invention discloses a focusing ring and a substrate processing apparatus including the focusing ring. The substrate processing apparatus may include: a processing module including at least one process chamber that performs a required process on a substrate; and a transfer module that transfers the substrate from the outside into the processing module. The at least one process chamber may include: a housing that provides a process space inside; a support unit disposed inside the housing to support the substrate and having a focusing ring including a plurality of rings; a gas supply unit that supplies a process gas into the process space; and a plasma generation unit that generates plasma from the process gas in the process space. The focusing ring may have a stepped structure including a plurality of stepped portions disposed downward toward the substrate. The present invention can significantly improve the lifespan of the focusing ring, and can significantly improve the lifespan of the process chamber including the focusing ring and the substrate processing apparatus including the focusing ring, respectively.

Description

[0001] This application claims the priority of Korean Patent Application No. 10-2020-0181873, filed with the Korean Intellectual Property Office on December 23, 2020. Technical Field

[0002] Exemplary embodiments of the present invention relate to a focusing ring and a substrate processing apparatus including the focusing ring. More specifically, exemplary embodiments of the present invention relate to a focusing ring including a stepped structure and a substrate processing apparatus including such a focusing ring. Background Art

[0003] An integrated circuit device or a display device can be manufactured using a substrate processing apparatus generally including a plurality of process chambers such as a deposition chamber, a sputtering chamber, an etching chamber, a cleaning chamber, a drying chamber, etc. Components included in such process chambers can be damaged during various processes in the process chambers. In particular, when a plasma etching process is performed on a substrate in the process chamber, a focusing ring that guides plasma onto the substrate is easily damaged, thereby shortening the lifespan of the focusing ring. For example, an existing focusing ring including an inner ring made of silicon carbide and an outer ring made of silicon oxide may be easily damaged by plasma generated from a fluorine-containing etching gas, and such damage can cause a decrease in the lifespan of the focusing ring. Summary of the Invention

[0004] Technical Problem

[0005] One aspect of the present invention provides a focusing ring including a stepped structure that can significantly increase the lifespan.

[0006] Another aspect of the present invention provides a process chamber including a focusing ring having a stepped structure that can significantly increase the lifespan.

[0007] Still another aspect of the present invention provides a substrate processing apparatus including a focusing ring having a stepped structure that can significantly increase the lifespan.

[0008] Technical Solution

[0009] In one aspect of the present invention, a focusing ring may be provided, which may include: a first ring in contact with a substrate, a second ring coupled to the first ring, a third ring coupled to the second ring, and a stepped structure provided between the second ring and the third ring.

[0010] In an exemplary embodiment, the first ring may have a first etching rate, the second ring may have a second etching rate, and the third ring may have a third etching rate. In this case, for a fluorine-containing etching gas, the first etching rate and the second etching rate may be substantially the same, and the third etching rate may be substantially greater than the first etching rate and the second etching rate. For example, the first ring and the second ring may contain silicon carbide, and the third ring may contain silicon oxide.

[0011] In an exemplary embodiment, the stepped structure may be formed at the interface between the second ring and the third ring, on one side of the second ring, or on one side of the third ring.

[0012] In an exemplary embodiment, the stepped structure may be disposed downward toward the substrate.

[0013] In an exemplary embodiment, the stepped structure may include a plurality of stepped portions. In this case, the stepped structure may include a first stepped portion, a second stepped portion, a third stepped portion, and a fourth stepped portion that can be disposed downward toward the substrate. Moreover, the first stepped portion to the fourth stepped portion may have a depth that substantially increases and a width that substantially decreases toward the substrate. For example, the first stepped portion may have a first depth and a first width, the second stepped portion may have a second depth that is substantially greater than the first depth and a second width that is substantially smaller than the first width, the third stepped portion may have a third depth that is substantially greater than the second depth and a third width that is substantially smaller than the second width, and the fourth stepped portion may have a fourth depth that is substantially greater than the third depth and a fourth width that is substantially smaller than the third width.

[0014] In an exemplary embodiment, a bonding stepped structure for stably bonding to the substrate may be provided below the first ring.

[0015] Another aspect of the present invention may provide a processing chamber including: a housing that provides a processing space inside; a support unit disposed within the housing to support a substrate and having a focusing ring including a plurality of rings; a gas supply unit that supplies a processing gas into the processing space; and a plasma generation unit that generates plasma from the processing gas within the processing space. In this case, the focusing ring may include a stepped structure disposed downward toward the substrate.

[0016] In an exemplary embodiment, the focusing ring may include a first ring that contacts the substrate, a second ring that is coupled to the second ring, and a third ring that is coupled to the second ring. Moreover, the stepped structure may be provided between the second ring and the third ring. For example, the stepped structure may be provided at the interface between the second ring and the third ring, on one side of the second ring, or on one side of the third ring.

[0017] In an exemplary embodiment, the stepped structure may include a first stepped portion, a second stepped portion, a third stepped portion, and a fourth stepped portion that are disposed downward toward the substrate. In this case, the first stepped portion to the fourth stepped portion may have a depth that substantially increases toward the substrate and a width that substantially decreases. For example, the first stepped portion may have a first depth and a first width, the second stepped portion may have a second depth that is substantially greater than the first depth and a second width that is substantially smaller than the first width, the third stepped portion may have a third depth that is substantially greater than the second depth and a third width that is substantially smaller than the second width, and the fourth stepped portion may have a fourth depth that is substantially greater than the third depth and a fourth width that is substantially smaller than the third width.

[0018] Another aspect of the present invention may provide a substrate processing apparatus. The substrate processing apparatus may include a processing module having at least one process chamber that performs a required process on a substrate and a transfer module that transfers the substrate into the processing module from the outside. The at least one process chamber may include a housing that provides a process space inside; a support unit that is disposed inside the housing to support the substrate and includes a focusing ring having a plurality of rings; a gas supply unit that supplies a process gas into the process space; and a plasma generation unit that generates plasma from the process gas in the process space. In this case, the focusing ring may have a stepped structure including a plurality of stepped portions that are disposed downward toward the substrate.

[0019] In an exemplary embodiment, the stepped structure may include a first stepped portion, a second stepped portion, a third stepped portion, and a fourth stepped portion that are disposed downward toward the substrate. In this case, the first stepped portion to the fourth stepped portion may have a depth that substantially increases toward the substrate and a width that substantially decreases.

[0020] Technical effects

[0021] According to an exemplary embodiment of the present invention, the focusing ring may have a stepped structure including stepped portions having a depth that increases downward toward the substrate and a width that decreases downward toward the substrate. Therefore, in an etching process using the focusing ring, even if a portion between the second ring and the third ring is damaged due to plasma generated from the process gas, it is possible to effectively prevent the damage from spreading further to the side portion and / or the center of the focusing ring. Therefore, the etching resistance and durability of the focusing ring can be significantly improved. Ultimately, the lifespan of the focusing ring can be greatly increased, and the lifespans of the process chamber including the focusing ring and the substrate processing apparatus including the focusing ring can be greatly increased, respectively.

[0022] However, the technical effects of the present invention are not limited to the above technical effects, and various expansions can be made without exceeding the spirit and scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a plan view for explaining a substrate processing apparatus according to an exemplary embodiment of the present invention;

[0024] Figure 2 is a cross-sectional view of an engineering chamber of a substrate processing apparatus for explaining an exemplary embodiment of the present invention;

[0025] Figure 3 is an enlarged cross-sectional view for explaining a focus ring according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0026] Exemplary embodiments of the present invention will be described below. The present invention can be subject to various changes and can have various forms, and the embodiments will be described in detail herein. However, this is not intended to limit the present invention to a specific disclosed form, and it should be understood to include all changes, equivalents, and alternatives within the spirit and technical scope of the present invention. Similar reference numerals are used for similar components when describing the respective drawings. Terms such as first, second, etc. can be used to describe various components, but the components are not limited to these terms. These terms are only used to distinguish one component from other components. The terms used in the present application are only used to describe specific embodiments and are not intended to limit the present invention. Singular forms also include plural forms in the text unless otherwise clearly stated. The terms "comprising", "having", or "including" described in the present application should be understood as having the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and should not be understood as precluding the existence or additional possibility of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0027] Unless otherwise defined, all terms used herein, including technical or scientific terms, represent the same meaning as commonly understood by those of ordinary skill in the technical field to which the present invention belongs. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with the context of the related art, and should not be interpreted as ideal or overly formal meanings unless clearly defined in the present application.

[0028] Exemplary embodiments of the present invention will be described in detail below with reference to the drawings. The same reference numerals are used for the same components in the drawings, and repeated descriptions of the same components are omitted.

[0029] Figure 1 is a plan view for explaining a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0030] Refer to Figure 1 , according to an exemplary embodiment, the substrate processing apparatus may include a transfer module 10 and a processing module 20. The processing module 20 may include a load lock module 30 and a process module 40.

[0031] The transfer module 10 may include a load port 50 and a transfer frame 60. A cassette 70 capable of accommodating a plurality of substrates may be disposed on the load port 50. For example, the cassette 70 may include a Front Opening Unified Pod (FOUP). In an exemplary embodiment, the transfer module 10 may include a plurality of load ports 50.

[0032] The transfer module 10 may include a carrier storage unit 80. The carrier storage unit 80 may have a structure similar to that of the cassette 70. The carrier storage unit 80 may be disposed adjacent to the load port 50. However, the position of the carrier storage unit 80 may change according to the configuration of the substrate processing apparatus.

[0033] The transfer frame 60 may transfer the substrate between the load lock module 30 and the cassette 70 accommodated in the load port 50. The transfer frame 60 may have a transfer track 90 and a transfer robot 100. The transfer robot 100 can move along the transfer track 90 and transfer the substrate between the cassette 70 and the load lock module 30.

[0034] The transfer robot 100 may include a transfer robot base 105, a body 110, a transfer robotic arm 115, and a transfer hand 120. The transfer robot base 105 can move on the transfer track 90. The body 110 may be coupled to the transfer robot base 105 and move together with the transfer robot base 105. In addition, the body 110 can rotate on the transfer robot base 105. The transfer robotic arm 115 may be coupled to the body 110 and can move or rotate on the body 110. In an exemplary embodiment, the transfer robot 100 may include a plurality of transfer robotic arms 115 that can each operate. Among them, a part of the plurality of transfer robotic arms 115 can transfer the substrate from the process module 40 into the cassette 70, and another part of the plurality of transfer robotic arms 115 can transfer the substrate from the cassette 70 into the process module 40.

[0035] The loading and locking module 30 can be configured between the transfer frame 60 and the transfer unit 150. The loading and locking module 30 can provide a space capable of accommodating the substrate(s) transferred between the transfer unit 150 and the transfer frame 60. During the transfer of the substrate(s) from the indexing module 10 into the process module 40, the loading and locking module 30 can maintain the pressure inside the indexing module 10 substantially the same as the pressure inside the process module 40. For example, the loading and locking module 30 can maintain the inside of the indexing module 10 at a substantially vacuum pressure. Also, during the transfer of the substrate(s) from the process module 40 to the indexing module 10, the loading and locking module 30 can maintain the pressure inside the process module 40 substantially the same as that of the indexing module 10.

[0036] The loading and locking module 30 can include a loading lock chamber 130 and an unloading lock chamber 135. The substrate transferred from the indexing module 10 into the process module 40 can be temporarily accommodated in the loading lock chamber 130. The substrate transferred from the process module 40 into the indexing module 10 can be temporarily accommodated in the unloading lock chamber 135.

[0037] The process module 40 can include the transfer unit 150 and a plurality of process chambers 180.

[0038] The transfer unit 150 can transfer the substrate between the loading lock chamber 130, the unloading lock chamber 135, and the process chambers 180. The transfer unit 150 can include a transfer chamber 155 and a transfer robot 160. The loading lock chamber 130, the unloading lock chamber 135, and the plurality of process chambers 180 can be arranged centered around the transfer chamber 155. The transfer chamber 155 can provide a transfer space 165 for accommodating the substrate.

[0039] The transfer robot 160 can be configured within the transfer space 165 and can transfer the substrate between the loading lock chamber 130, the unloading lock chamber 135, and the process chambers 180. The transfer robot 160 can have a transfer robotic arm 170 and a transfer hand 175 for transferring the substrate. Optionally, the transfer robot 160 can include a plurality of transfer robotic arms 170 and a plurality of transfer hands 175.

[0040] In an exemplary embodiment, the substrate processing apparatus may include a plurality of process chambers 180. The process chambers 180 may include, but are not limited to, an etching chamber, a deposition chamber, a cleaning chamber, a drying chamber, a coating chamber, a developing chamber, an exposure chamber, etc. In the process chamber 180, required processes including a deposition process, an etching process, a cleaning process, a coating process, a developing process, and / or an exposure process may be performed on the substrate.

[0041] Figure 2 FIG. is a cross-sectional view of a process chamber of a substrate processing apparatus for illustrating an exemplary embodiment of the present invention. In the exemplary embodiment, the process chamber may include a plasma etching chamber.

[0042] See Figure 2 , the process chamber 180 of the substrate processing apparatus may include a housing 200, a support unit 300, a gas supply unit 400, a plasma generation unit 500, an exhaust unit 600, etc.

[0043] The housing 200 may include a process space 205 capable of performing required processes such as an etching process on the substrate W. The housing 200 may have a substantially cylindrical shape. For example, it may be made of a metal such as aluminum. An opening for loading and unloading the substrate W into and from the process space 205 may be provided on one side of the housing 200. Such an opening may be opened or closed by a door 210. A hole 220 may be provided on the bottom surface of the housing 200. The hole 220 of the housing 200 may be connected to a vacuum component (not shown). For example, the inside of the process space 205 may be maintained at a substantially vacuum through the vacuum component such as a vacuum pump.

[0044] The support unit 300 may be disposed in the process space 205 of the housing 200. For example, the support unit 300 may support the substrate W during a plasma etching process on the substrate W to form a required structure including a circuit pattern on the substrate W. In the exemplary embodiment, the support unit 300 may include an electrostatic chuck capable of applying an electrostatic force to the bottom surface of the substrate W to support the substrate W. Optionally, the support unit 300 can support the substrate W in a manner such as a clamp.

[0045] In the exemplary embodiment, when the support unit 300 includes the electrostatic chuck, the support unit 300 may have a dielectric plate 305, an internal electrode 310, a heater 315, a base 320, a cooling flow path 325, and a focusing ring 350.

[0046] The dielectric plate 305 may be made of a dielectric material, and the substrate W may be placed on the dielectric plate 305. The dielectric plate 305 may have a substantially circular plate shape. The dielectric plate 305 may have a diameter substantially the same as that of the substrate W, or a diameter substantially smaller than that of the substrate W. The size of such a dielectric plate 305 may vary according to the size of the substrate W.

[0047] The internal electrode 310 may be disposed within the dielectric plate 305. Electric power from a power source (not shown) may be applied to the internal electrode 310, so that an electrostatic force may occur between the substrate W and the dielectric plate 305. Also, a heater 315 capable of heating the substrate W may be installed within the dielectric plate 305. The heater 315 may be disposed below the internal electrode 310. For example, the heater 315 may include a spiral coil.

[0048] The base 320 may be coupled to the dielectric plate 305 and be capable of supporting the dielectric plate 305. The central portion of the base 320 may be substantially higher than the peripheral portion of the base 320. In this case, the central portion of the base 320 may have a size substantially the same as that of the dielectric plate 305. For example, the base 320 may be made of metal.

[0049] The cooling flow path 325 may be provided within the base 320. A cooling fluid can circulate through the cooling flow path 325 to cool the support unit 300. For example, the cooling flow path 325 may have a substantially spiral shape.

[0050] The base 320 may be electrically connected to an external high-frequency power source (not shown). The high-frequency power source can apply a predetermined power to the base 320, and the plasma generated from the process gas introduced into the process space 205 of the housing 200 can be guided to the base 320 through the applied power.

[0051] At least one focusing ring 350 may be disposed on the peripheral portion of the base 320. The at least one focusing ring 350 can concentrate the plasma generated from the process gas onto the substrate W. The at least one focusing ring 350 may be configured to surround the dielectric plate 305 and the substrate W. For example, the dielectric plate 305 and the substrate W may be located on the central portion of the at least one focusing ring 350. With such a focusing ring 350 having this structure, the substrate W can be held in the correct position. Also, the focusing ring 350 can expand the region where an electric field is formed within the process space 205 such that the substrate W can be located at the central portion of the process space 205 where the plasma is generated.

[0052] Figure 3It is an enlarged cross-sectional view of a focusing ring for illustrating an exemplary embodiment of the present invention.

[0053] Refer to Figure 3 , the focusing ring 350 may include a first ring 355, a second ring 360, and a third ring 365. The first ring 355 may be in contact with a side portion of the substrate W. The second ring 360 may be coupled to the first ring 355. And, the third ring 365 may be coupled to the second ring 360. Among them, the first ring 355 may be referred to as an inner ring, the second ring 360 may be referred to as a first outer ring, and the third ring 365 may be referred to as a second outer ring. Figure 3 The illustrated focusing ring 350 includes the first ring 355, the second ring 360, and the third ring 365, but the number of rings constituting the focusing ring 350 may be reduced or increased according to the size of the substrate processing apparatus and / or the process engineering conditions for the substrate W.

[0054] In an exemplary embodiment, the height of the first ring 355 may be substantially smaller than the height of the second ring 360 and / or the height of the third ring 365. In this case, a coupling stepped structure for stable coupling of the focusing ring 350 to the substrate W and the dielectric plate 305 may be provided at a lower portion of the first ring 355. For example, the height of the first ring 355 may be reduced in a substantially stepped manner toward the substrate W that the first ring 355 can contact. However, the second ring 360 may have substantially the same height as the third ring 365.

[0055] According to the focusing ring 350 of the exemplary embodiment, the third ring 365 may have an etching rate different from that of the first ring 355 and the second ring 360 for the plasma generated from the process gas in the process space 205. In other words, a first etching rate of the first ring 355 for the plasma may be substantially the same as a second etching rate of the second ring 360 for the plasma, and a third etching rate of the third ring 365 for the plasma may be different from the first etching rate of the first ring 355 and the second etching rate of the second ring 360. For example, when the process gas supplied into the process space 205 contains fluorine (F), the first ring 355 and the second ring 360 may respectively contain silicon carbide (SiCx), and the third ring 365 may contain silicon oxide (SiOx) (for example, quartz). Therefore, for the plasma generated from the fluorine-containing process gas, the third ring 365 may have an etching rate substantially higher than the etching rates of the first ring 355 and the second ring 360.

[0056] Generally, a focus ring disposed in an engineering chamber for the plasma etching process may include rings made of different materials. In the case of an existing focus ring including an inner ring and an outer ring, during the plasma etching process performed in the engineering chamber, since the etching rate of the inner ring with respect to the plasma is different from the etching rate of the outer ring with respect to the plasma, the plasma can cause damage centered on a part of the focus ring where the inner ring and the outer ring are in contact (i.e., the interface between the inner ring and the outer ring). As the focus ring is used in the plasma etching process, the damage to such an inner ring and outer ring can expand toward the center of the focus ring, so the lifespan of the focus ring may be shortened.

[0057] According to an exemplary embodiment, the focus ring 350 may include a stepped structure 370 disposed between the second ring 360 and the third ring 365. More specifically, a stepped structure 370 configured to face downward toward a substrate W surrounded by the focus ring 350 may be formed at an interface between the second ring 360 and the third ring 365. The position of such a stepped structure 370 may also be described as the stepped structure 370 being formed at a side portion of the second ring 360 or a side portion of the third ring 365.

[0058] As Figure 3 illustrated, the stepped structure 370 of the focus ring 350 may include a plurality of stepped portions. Specifically, the stepped structure 370 may include a first stepped portion 373, a second stepped portion 376, a third stepped portion 379, and a fourth stepped portion 382 that are sequentially disposed downward toward the substrate W. Figure 3It is illustrated in [the figure] that the stepped structure 370 includes the first to fourth stepped portions 373, 376, 379, and 382. However, the number of stepped portions of the stepped structure 370 may be increased or decreased according to the structure and use of the focus ring 350. In the exemplary embodiment, the focus ring 350 may have substantially the same dimensions as an existing focus ring. For example, the sum of the upper widths of the first ring 355 and the second ring 360 may be substantially the same as the upper width of the inner ring of an existing focus ring. Also, the lower width of the second ring 360 may be substantially the same as the lower width of the inner ring of an existing focus ring. Therefore, the focus ring 350 can be easily disposed in an existing etching chamber without changing the structure and dimensions of the components of the existing etching chamber. Also, since the focus ring 350 according to the exemplary embodiment may have substantially the same dimensions as an existing focus ring, the plasma etching process can be stably performed on the substrate W using the focus ring 350 without substantially changing the process conditions of the plasma etching process performed in the existing etching chamber. That is, the focus ring 350 according to the exemplary embodiment can be installed in an existing etching chamber without changing the structure and dimensions of the existing etching chamber and the process conditions of the existing etching process, and can enable the plasma etching process to be stably performed.

[0059] Referring again to Figure 3 , the first stepped portion 373 of the stepped structure 370 may have a first depth H1 and a first width W1 starting from the focus ring 350. The second stepped portion 376 may have a second depth H2 and a second width W2, and the third stepped portion 379 may have a third depth H3 and a third width W3. Also, the fourth stepped portion 382 may have a fourth depth H4 and a fourth width W4. Among them, the bottom surface from the fourth stepped portion 382 to the focus ring 350 may be a fifth depth H5.

[0060] In an exemplary embodiment, a first depth H1 of the first stepped portion 373 may be substantially smaller than a second depth H2 of the second stepped portion 376, while a first width W1 of the first stepped portion 373 may be substantially larger than a second width W2 of the second stepped portion 376. The second depth H2 of the second stepped portion 376 may be substantially smaller than a third depth H3 of the third stepped portion 379, but the second width W2 of the second stepped portion 376 may be substantially larger than a third width W3 of the third stepped portion 379. The third depth H3 of the third stepped portion 379 may be substantially smaller than a fourth depth H4 of the fourth stepped portion 382, but the third width W3 of the third stepped portion 379 may be substantially larger than a fourth width W4 of the fourth stepped portion 382. Further, a fifth depth H5 from the fourth stepped portion 382 to a bottom surface of the focus ring 350 may be substantially larger than the fourth depth H4 of the fourth stepped portion 382. That is, the stepped structure 370 may include the first to fourth stepped portions 373, 376, 379, 382 having the first to fifth depths H1, H2, H3, H4, H5 increasing downwardly toward the substrate W and the first to fourth widths W1, W2, W3, W4 decreasing downwardly toward the substrate W. The above-described stepped structure 370 can effectively prevent damage to the focus ring 350 that may occur during the plasma etching process. Thus, the focus ring 350 can have significantly improved etching resistance and remarkably enhanced durability. Ultimately, the focus ring 350 can have a remarkably enhanced lifespan.

[0061] According to an exemplary embodiment, the focus ring 350 may include the stepped structure 370 including the stepped portions 373, 376, 379, 382 having a depth gradually increasing toward the substrate W and a width gradually decreasing toward the substrate W. Thus, in a plasma etching process using the focus ring 350, even when the plasma causes partial damage between the second ring 360 and the third ring 365, such damage can be effectively prevented from spreading to the side and / or center of the focus ring 350. Accordingly, the etching resistance and durability of the focus ring 350 including the stepped portions 373, 376, 379, 382 can be significantly improved. As a result, the lifespan of the process chamber 180 including the focus ring 350 and the substrate processing apparatus including the focus ring 350 can also be significantly extended.

[0062] In a plasma etching process performed using plasma generated from a fluorine-containing etching gas, an existing focus ring including an inner ring made of silicon carbide and an outer ring made of silicon oxide, having a height of about 8 mm and a diameter of about 40 mm, has a lifetime of about 2,070 hours. In contrast, when a plasma etching process using plasma generated from the fluorine-containing etching gas is performed using a focus ring 350 including the stepped structure 370 and having the same height and diameter as the existing focus ring, the lifetime of the focus ring 350 increases to about 6,790 hours, which is more than about three times that of the existing focus ring. At this time, the focus ring 350 includes a first ring 355 made of silicon carbide, a second ring 360 made of silicon carbide, and a third ring 365 made of silicon oxide. Therefore, the focus ring 350 including the stepped structure 370 exhibits a lifetime that is significantly increased compared to that of the existing focus ring.

[0063] See again Figure 2 , the gas supply unit 400 can supply the process gas onto the substrate W supported by the support unit 300. The gas supply unit 400 may include a gas storage tank 405 and a supply line 410. The supply line 410 can connect the gas storage tank 405 and a gas inlet port 415 provided at the upper part of the housing 200. The process gas stored in the gas storage tank 405 can be introduced into the process space 205 of the housing 200 through the supply line 410 and the gas inlet port 415.

[0064] The plasma generation unit 500 can convert the process gas introduced into the housing 200 from the gas supply unit 400 into the plasma. For example, the plasma generation unit 500 may include an inductively coupled plasma (ICP) source as a plasma source. The plasma generation unit 500 may include an antenna 505 and an external power supply 510. Among them, the external power supply 510 can apply power to the antenna 505. Therefore, a discharge region can be formed in the process space 205, and the process gas introduced into the discharge region can be converted into the plasma.

[0065] The exhaust unit 600 may be disposed in the process space 205 adjacent to the support unit 300. The exhaust unit 600 may include a plurality of exhaust holes 605 and can partially exhaust the plasma so that the plasma can be substantially uniformly distributed throughout the process space 205. For example, the exhaust unit 600 may have a substantially annular shape.

[0066] According to an exemplary embodiment of the present invention, the focusing ring may have a stepped structure including a stepped portion having a depth increasing downward toward the substrate and a width decreasing downward toward the substrate. Therefore, in an etching process using the focusing ring, even if partial damage occurs between the second ring and the third ring due to plasma generated from the process gas, it is possible to effectively prevent the phenomenon that the damage continues to spread to the side and / or the center of the focusing ring. Therefore, the etching resistance and durability of the focusing ring can be significantly improved. As a result, the lifespan of the focusing ring can be greatly increased, and the lifespans of the process chamber including the focusing ring and the substrate processing apparatus including the focusing ring can be increased respectively.

[0067] The exemplary embodiments of the present invention have been described above, but those of ordinary skill in the art should understand that the present invention can be variously modified and changed without departing from the spirit and scope of the present invention described in the technical solution.

Claims

1. A focusing ring, characterized in that, Comprising: A first ring that surrounds a substrate; A second ring that is coupled to the first ring; A third ring that is coupled to the second ring; And A stepped structure that is provided between the second ring and the third ring; Wherein, the stepped structure is disposed downwardly toward the substrate; Wherein, the stepped structure includes a plurality of stepped portions; Wherein, the stepped structure includes a first stepped portion, a second stepped portion, a third stepped portion, and a fourth stepped portion that are disposed downwardly toward the substrate; Wherein, the first stepped portion to the fourth stepped portion respectively have a depth that increases and a width that decreases toward the substrate.

2. The focusing ring according to claim 1, wherein: The first ring has a first etching rate, the second ring has a second etching rate, and the third ring has a third etching rate.

3. The focusing ring according to claim 2, wherein: For a fluorine-containing etching gas, the first etching rate and the second etching rate are the same, and the third etching rate is greater than the first etching rate and the second etching rate.

4. The focusing ring according to claim 2, wherein: The first ring and the second ring respectively contain silicon carbide, and the third ring contains silicon oxide.

5. The focusing ring according to claim 1, wherein: The stepped structure is formed at an interface between the second ring and the third ring, on one side of the second ring, or on one side of the third ring.

6. The focusing ring according to claim 1, wherein: The first stepped portion has a first depth and a first width, the second stepped portion has a second depth greater than the first depth and a second width smaller than the first width, the third stepped portion has a third depth greater than the second depth and a third width smaller than the second width, and the fourth stepped portion has a fourth depth greater than the third depth and a fourth width smaller than the third width.

7. The focusing ring according to claim 1, wherein: A coupling stepped structure is provided at a lower portion of the first ring for stably coupling the focusing ring to the substrate.

8. An engineering chamber, characterized in that, Comprising: A housing that provides an engineering space inside; A support unit that is disposed within the housing to support a substrate and includes a focusing ring having a plurality of rings; A gas supply unit that supplies an engineering gas into the engineering space; And A plasma generation unit that generates plasma from the engineering gas within the engineering space, The focusing ring has a stepped structure including a plurality of stepped portions that are disposed downwardly toward the substrate; Wherein, the focusing ring includes a first ring, a second ring coupled to the first ring, and a third ring coupled to the second ring, The stepped structure is provided between the second ring and the third ring; Wherein, the stepped structure includes a first stepped portion, a second stepped portion, a third stepped portion, and a fourth stepped portion that are disposed downwardly toward the substrate; Wherein, the first stepped portion to the fourth stepped portion have a depth that increases and a width that decreases toward the substrate.

9. The engineering chamber according to claim 8, wherein: The stepped structure is formed at the interface between the second ring and the third ring, on one side of the second ring, or on one side of the third ring.

10. The engineering chamber according to claim 8, wherein: The first stepped portion has a first depth and a first width, the second stepped portion has a second depth greater than the first depth and a second width smaller than the first width, the third stepped portion has a third depth greater than the second depth and a third width smaller than the second width, and the fourth stepped portion has a fourth depth greater than the third depth and a fourth width smaller than the third width.

11. A substrate processing apparatus, characterized in that, Comprising: A processing module including at least one engineering chamber for performing a required process on a substrate; And A transfer module for transferring the substrate from the outside into the processing module, The at least one engineering chamber includes: A housing that provides an engineering space inside; A support unit configured inside the housing to support the substrate, and having a focusing ring including a plurality of rings; A gas supply unit for supplying engineering gas into the engineering space; and A plasma generation unit for generating plasma from the engineering gas in the engineering space, The focusing ring has a stepped structure including a plurality of stepped portions arranged downward toward the substrate; Wherein, the stepped structure includes a first stepped portion, a second stepped portion, a third stepped portion, and a fourth stepped portion arranged downward toward the substrate; Wherein, the first stepped portion to the fourth stepped portion have depths increasing and widths decreasing respectively toward the substrate.

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