Adsorption chamber wall for semiconductor equipment

Abstract

An adsorption structure defined in a plasma processing chamber includes an inner layer having one or more heating elements to heat the adsorption structure, a middle portion having a coolant flow delivery network through which coolant circulates to cool the adsorption structure to a temperature that allows selective adsorption of byproducts released in the processing chamber, and a vacuum flow network connected to a vacuum line to generate a low-pressure vacuum and remove the byproducts released from the adsorption structure. A lattice structure is defined on the middle portion, and the lattice structure includes a network of openings defined in multiple layers to increase the surface area to improve byproduct adsorption. The inner portion is disposed adjacent to the middle portion. The outer layer of the lattice structure faces the inner region of the chamber. The size of the openings in the layers of the lattice structure gradually increases from the inner layer to the outer layer, so that the outer layer provides a larger surface area for adsorbing byproducts. The vacuum line is activated during the adsorption step to create a low-pressure area in the lattice structure relative to the pressure in the chamber to adsorb byproducts. The desorption step is performed in conjunction with the WAC / CWAC to reliably remove the accumulated byproducts from the adsorption wall.

Description

Technical Field

[0001] The present embodiments relate to semiconductor substrate processing equipment tools, and more particularly to an equipment tool having an adsorption chamber wall for controlling the adsorption and desorption of particles and other byproducts released during substrate processing. Background Art

[0002] In semiconductor processing systems such as plasma chambers, reactive gases are used to generate plasma to etch various microscopic features on the substrate surface. These reactive gases generate byproduct particles, such as polymers. These byproducts adhere to exposed surfaces, such as the interior walls of chamber walls or liners. These byproducts must be removed regularly to prevent the accumulated byproducts from contaminating the substrate surface and adversely affecting the process results.

[0003] One way to clean the chamber walls is to open the chamber and manually clean the walls. Manual cleaning may be different for each chamber (i.e., process module (PM)), resulting in a PM-to-PM mismatch. In addition, if manual cleaning is not performed carefully, one or more components of the chamber may be damaged. In addition to PM-to-PM mismatch, throughput may be affected due to the time required to restart the chamber to process substrates after each cleaning.

[0004] Other automated procedures, such as waferless auto-clean (WAC) and covered wafer area clean (CWAC), run various process recipes (gas type, gas flow, temperature, pressure, duration, etc.) to achieve consistent and repeatable chamber cleaning, which eliminates the need to open the chamber for cleaning. However, in some applications, WAC / CWAC processes are long and may need to be performed frequently (e.g., after each wafer is processed), which may result in a significant reduction in yield. In addition, WAC and CWAC processes use harsh plasma chemistries to remove residues from the chamber walls, and these harsh environments can also corrode chamber components such as the chamber walls, electrodes, and edge rings.

[0005] Once the chamber walls have been cleaned, processing of the substrate is restarted. During substrate processing, the accumulation of process byproducts on the chamber surfaces changes the reflectivity of these surfaces to incoming particles, which causes the plasma field to change over time and may cause process drift. This may be due to the accumulation of byproducts on various surfaces within the chamber (on the chamber walls or on the liner or upper electrode surface or any other surface exposed to the plasma) and the exposure of the substrates processed in the chamber to various degrees of byproduct accumulation in the chamber. For example, the first substrate processed immediately after the chamber is cleaned is exposed to the clean chamber walls, and as the byproduct accumulation on the chamber walls increases, each subsequent substrate processed in the chamber is exposed to a different degree of cleanliness in the chamber. This can cause substrate-to-substrate (or wafer-to-wafer) process drift. Additional substrate-to-substrate drift may occur when the substrates are subjected to different etch rates over time. Similar problems may occur when the substrates are exposed to other processes (such as deposition, etc.).

[0006] For some applications with long process times, the accumulation of process byproducts deposited on chamber surfaces can reach a point where the thickness of the deposited film on the chamber surfaces reaches a critical value, at which point the film begins to break and eject particles into the chamber, causing defects on the wafer. To help delay the breakage of the byproduct film and create a more uniform environment from substrate to substrate, pre-coating materials are often deposited on the chamber walls before the process begins. However, for processes with very long durations, pre-coating techniques may not be sufficient.

[0007] It is against this background that the embodiments of the present disclosure arise. Summary of the invention

[0008] The present embodiment relates to providing an adsorption wall with a large surface area, which can adsorb a large amount of byproducts released in the chamber during substrate processing. The byproduct contaminants adsorbed on the adsorption wall can be cleaned without opening the chamber. Due to the large surface area of ​​the adsorption wall, the duration of the chamber to process the wafer without cleaning is increased. The adsorption wall described in various embodiments provides a method for performing both an adsorption step and a desorption step. In the adsorption step, the temperature of the adsorption wall is maintained at a level sufficient to selectively adsorb particles (particularly etching byproduct particles generated during substrate processing) and condense them, while preventing (one or more) reactive gases used to process the substrate in the chamber from condensing. In the desorption step, the adsorption wall is heated to a temperature sufficient to release the deposited etching byproducts from the adsorption wall, and waferless automatic cleaning (WAC) and covered wafer area cleaning (CWAC) are performed with or without gas purge automatic cleaning (GPAC). Since the adsorption wall helps to adsorb byproducts and the incoming byproduct particles are not reflected back from the chamber surface, the adsorption wall is also referred to as a "non-reflective" chamber wall in this article.

[0009] A lattice structure in the form of, for example, a metal foam is defined in the adsorption structure to successfully adsorb byproducts released during substrate processing. The lattice structure provides an increased surface area, enabling a greater amount of byproducts to be adsorbed before a cleaning chamber is required, thereby reducing the frequency with which WAC / CWAC needs to be performed. The lattice structure includes layers of openings of varying sizes to aid in the successful adsorption of byproducts. The temperature of the adsorption structure is maintained at a temperature sufficient to condense byproducts released during substrate processing by flowing a coolant through internal channels defined in the adsorption structure. After a certain number of substrates are processed, the surface temperature of the lattice structure is increased by heat flowing through the internal channels or any other means, thereby desorbing byproducts from the lattice structure during WAC / CWAC and removing the byproducts by purging using a pump. The number of substrates to be processed before the desorption step begins is process-specific and is selected to optimize yield while minimizing defects and variability. Since byproducts are removed by the adsorption structure of the chamber during the process, the overall quality of substrates processed in the chamber is greatly improved because process drift caused by the time-varying chamber wall reflectivity is minimized. Furthermore, since there is no need to open the chamber for cleaning, or to perform WAC / CWAC after each substrate, the output of substrates processed in the chamber is significantly improved because the delay in conditioning the chamber to process substrates is minimized. Furthermore, since the effective wall surface area upon which process byproducts can be deposited is increased, the byproduct film thickness that reaches a critical value for film cracking is delayed, thereby reducing defects on the wafer. Furthermore, since cleaning is not performed manually but rather automatically using an adsorption structure, process chamber to process chamber mismatch and substrate to substrate drift are minimized. Furthermore, by effectively increasing the rate of adsorption of process byproducts on the adsorption walls, the availability of byproducts within the chamber is reduced, thereby reducing the rate at which byproducts are deposited on other chamber surfaces. This indirectly provides a positive side effect by also helping to reduce the frequency with which other chamber surfaces need to be cleaned. Several inventive embodiments of the present disclosure are described below.

[0010] An adsorption structure defined in a portion of the chamber includes an inner portion, an intermediate portion, and a lattice structure. The inner portion includes one or more heating elements. The heating elements are connected to a heat source via heating cables. The intermediate portion includes a coolant delivery network to allow coolant from the coolant source to flow through one or more channels defined therein. The intermediate portion also includes a vacuum conduit connected to a vacuum line. The intermediate portion is disposed adjacent to the inner portion. The lattice structure is defined adjacent to the intermediate portion such that an outer layer of the lattice structure faces an interior area of ​​the chamber. The lattice structure has a network of openings and is connected to a vacuum conduit in the intermediate portion. The vacuum line is used to remove byproducts adsorbed in the lattice structure.

[0011] In another embodiment, a method for adsorbing and removing byproducts generated in a chamber is described, the chamber comprising an adsorption structure defined in a portion of the chamber. The method includes cooling the adsorption structure to a first temperature by flowing a coolant in one or more channels defined in a middle portion of the adsorption structure. The coolant circulates from a coolant source through a coolant inlet, through one or more channels, and out through a coolant outlet. Using a coolant flow to cool the adsorption structure is an example, and other methods of cooling the adsorption structure, including thermoelectric cooling, may also be used, as long as the other methods have sufficient capacity to condense and maintain the temperature at a desired level. The first temperature can be defined as being sufficient to increase the adsorption of byproducts released in the chamber, but will not condense the reactive gas used in the chamber. The method also includes using a lattice structure or more generally an architectural structure defined in the adsorption structure to capture byproducts released in the chamber during substrate processing. The lattice structure includes an open network, and the byproducts are captured at an outer layer of the lattice structure facing the interior area of ​​the chamber and are pushed to an inner layer adjacent to the middle portion. The adsorption structure is heated to a second temperature so as to release the byproducts from the open network of the lattice structure during desorption chamber cleaning. The lattice structure is heated using one or more heating elements defined in an inner portion, wherein the inner portion is disposed adjacent to a middle portion, and the middle portion is adjacent to the lattice structure. Trapped byproducts released from the lattice structure are removed by a WAC / CWAC procedure (with or without GPAC) and by a vacuum line coupled to the lattice, wherein the vacuum line is operated using a pump.

[0012] Other aspects of the invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The embodiments may be best understood by referring to the following description taken in conjunction with the accompanying drawings.

[0014] Figure 1 A simplified view of an example etch chamber is illustrated in which a gettering structure is defined on a portion of a wall of the etch chamber in accordance with one embodiment of the present disclosure. Figure 1A An expanded view of a suction structure according to an embodiment of the present disclosure is illustrated.

[0015] Figure 2 An expanded view of a suction structure identifying different components according to an embodiment of the present disclosure is illustrated. Figure 2A An expanded view of a network of vacuum lines defined in a suction structure according to one embodiment of the present disclosure is illustrated. Figure 2B An expanded view of a coolant flow delivery network defined in a sorption structure according to one embodiment of the present disclosure is illustrated.

[0016] Figure 3A simplified view of an alternative etch chamber having a getter structure defined thereon is illustrated in accordance with one embodiment of the present disclosure.

[0017] Figure 4A A simplified top view of an etch chamber according to one embodiment of the present disclosure is illustrated, identifying one example configuration of some chamber components and a suction structure.

[0018] Figure 4B A simplified top view of an etch chamber according to an alternative embodiment is illustrated identifying some chamber components and a second example configuration of a segmented adsorption structure.

[0019] Figure 5 A simplified top view of an etching chamber having an alternative example configuration of an adsorption structure according to one embodiment of the present disclosure is illustrated.

[0020] Fig. 6A A simplified view of a first alternative example of an etching chamber according to one embodiment of the present disclosure is illustrated, wherein a suction structure is disposed to cover a portion of a chamber wall.

[0021] Figure 6B A simplified view of a second alternative example of an etching chamber according to an embodiment of the present disclosure is illustrated, wherein a suction structure is disposed on a portion of a C-shaped shield defined in the chamber.

[0022] Fig. 7A A simplified block diagram of an exemplary structural material for adsorbing byproducts in an adsorption wall is illustrated according to one embodiment of the present disclosure.

[0023] Figure 7B FIG. 1 illustrates a display according to an embodiment Fig. 7A Examples of architectural materials for the different components identified in .

[0024] Figure 8 An example method of using an adsorption structure to adsorb and remove byproducts released in a chamber according to an embodiment of the present disclosure is illustrated.

[0025] Fig. 9 A control module (ie, controller) for controlling various process parameters of a cluster tool, including temperature and other parameters for controlling the operation of an adsorption structure, is illustrated according to one embodiment. DETAILED DESCRIPTION

[0026] Although the following detailed description contains many specific details for the purpose of illustration, it will be appreciated by those skilled in the art that many variations and modifications of the following details are within the scope of the present disclosure. Therefore, without losing the generality of the claims attached to this specification and without imposing limitations thereon, the aspects of the present disclosure described below are set forth.

[0027] In general, various embodiments of the present disclosure describe systems and methods for providing an adsorption structure that can be integrated into an interior region of a chamber for processing a substrate to remove particles and other byproducts generated in the chamber during substrate processing. The portion of the wall in which the adsorption structure is integrated can be a portion of a chamber wall, or a portion of a liner defined within the chamber, or a portion of a plasma confinement structure defined within the chamber, wherein the portion is aligned with a gap defined between an upper electrode (e.g., a showerhead, etc.) and a lower electrode (e.g., an electrostatic chuck (ESC), a pedestal, etc.). The adsorption structure includes a lattice structure that can be made of a framework material (e.g., a metal foam or honeycomb), a coolant flow network, one or more heating elements, and one or more vacuum conduits coupled to a vacuum line to effectively attract and remove byproducts generated within the chamber. The lattice structure provides a large surface area for effectively adsorbing byproducts. A coolant source provides a coolant that can be circulated through the channel so as to maintain the adsorption structure at a temperature suitable for consistently adsorbing byproducts during the process. In order to maintain a consistent adsorption rate on the lattice structure, the wall temperature in the process may be time-dependent to account for the increased thermal resistance of the film previously deposited on the lattice surface. The heat source is used to provide heat to the lattice structure so that the byproducts adsorbed on the lattice structure are quickly released during WAC / CWAC. A vacuum line is connected between the adsorption structure and a pump (e.g., a vacuum turbo pump) to locally provide a vacuum on the adsorption wall to remove the released byproducts. The effective adsorption and removal (desorption) of the byproducts using the adsorption structure ensures that the byproducts released in the chamber will not be reflected back from the surface to which they are attached and contaminate the substrate surface, thereby maintaining the substrate quality.

[0028] In conventional chamber designs without adsorption structures, byproducts diffuse and accumulate on the walls of the chamber. During the processing of substrates, some byproducts, such as polymers, accumulate on the chamber walls. When the accumulation of byproducts reaches a critical film thickness, the film may rupture and release particles of varying sizes into the chamber, which may adhere to the substrate surface, causing defects on the substrate (i.e., wafer). The diffusion and accumulation of byproducts on the walls are slow, resulting in process drift. To prevent process drift, improve the processing quality of substrates in the chamber, and reduce defects on wafers, conventional methods require powering off the chamber, opening it, manually scrubbing the walls, closing it, adjusting it, and powering it on again. This clean chamber processing takes time and can cause chamber-to-chamber drift depending on the level of cleaning accomplished in each chamber. Additional process drift can occur when etching rates vary from substrate to substrate, which can depend on the type of features being formed.

[0029] To reduce downtime, chamber-to-chamber mismatch, and increase substrate processing throughput in the chamber, other automated procedures such as waferless automated cleaning (WAC) and covered wafer area cleaning (CWAC) are used. WAC / CWAC runs various process recipes (gas type, gas flow, temperature, pressure, duration, etc.) to achieve consistent and repeatable chamber cleaning, and such cleaning can be completed without opening the chamber. WAC is performed without any wafer (i.e., substrate), while CWAC uses a dummy wafer placed on the ESC to protect the ESC from plasma-induced corrosion during CWAC. Typically during the WAC process, when the ESC is used as a lower electrode, the power to the ESC is turned off to prevent ESC damage, and the process recipe for cleaning is run. The process recipe used in WAC must be effective to delay opening the chamber for thorough cleaning. The plasma chemistry used to remove residues on the chamber walls can also corrode chamber components such as chamber walls, electrodes, edge rings, TCP window surfaces, etc.

[0030] The adsorption structures described in various embodiments herein help reduce defects on wafers, reduce the frequency of needing to perform WAC / CWAC, minimize process substrate to substrate drift, maintain consistent chamber wall conditions, and maximize byproduct removal. Since the cleaning process can be performed without opening the chamber to atmospheric conditions, throughput is improved and chamber to chamber mismatch is reduced.

[0031] The adsorption structure described in various embodiments acts as a particle (i.e., byproduct) "black hole" by engaging a pump to define a local low pressure region at the adsorption structure. During substrate processing, the adsorption structure is used to perform an adsorption step, where the adsorption structure is maintained at a sufficiently cold temperature to reliably and consistently adsorb gases in a selective manner in the chamber, such as by adsorbing process byproducts, but without condensing the reactant gas(es) used in the chamber. In some embodiments, the adsorption wall temperature can be time dependent and set to selectively condense various gases on the adsorption wall to achieve optimal process results.

[0032] In one embodiment, the lower electrode in the chamber can be an electrostatic chuck (ESC) that provides a support surface for receiving a substrate for processing. When an electrostatic clamping voltage is applied to a clamping electrode included in the ESC, the ESC operates by providing an electrostatic clamping force to the substrate. The clamping force and therefore the clamping voltage are process-related parameters and are defined during process recipe setup. The chamber pressure of the plasma used to process the substrate is also a process-related parameter and is defined during process recipe setup. Similar to the ESC temperature and chamber pressure, which are process-related parameters and defined during recipe setup, the adsorption wall temperature depends on the process and can be defined as a recipe parameter during recipe setup. By controlling the adsorption wall temperature during recipe setup, more control can be exercised over the chamber conditions to obtain optimal process results. The vacuum pipeline network of the adsorption structure, together with the low temperature in the adsorption structure, provides a local low pressure area, which helps to selectively adsorb byproduct particles onto the adsorption wall. The chemical coating on the lattice structure of the adsorption structure helps in the selective adsorption of gases and byproduct species.

[0033] After substrate processing, when it is necessary to clean the adsorption structure from the accumulation of by-products, a desorption step is performed. In the desorption step, the adsorption structure can be heated to a desired temperature that allows the by-products to be more efficiently released from the lattice structure. A heating element embedded in the adsorption structure is used to heat the adsorption structure. In addition, the local low pressure applied to the chamber is turned off and WAC / CWAC (i.e., automatic cleaning) is performed. In the desorption step, a turbo pump is used to remove the by-products released from the lattice structure through a vacuum line. In one embodiment, a conventional pump front line defined in the chamber can be used to remove the by-products released from the lattice structure. The desorption step fully cleans the adsorption structure so that the chamber with the cleaned adsorption structure is ready for additional substrate processing.

[0034] In order to effectively remove the byproducts from the chamber, the adsorption wall uses a large surface area, a low surface temperature during the adsorption step to effectively adsorb the byproducts, and a high surface temperature during the desorption step to release the byproducts adsorbed on the adsorption structure. The lattice structure included in the adsorption structure design provides a large surface area to effectively adsorb the byproducts while minimizing the accumulation of byproducts in a single location. The lattice structure includes an opening network with an optimized topology that allows for an increase in the effective thermal conductivity of the lattice structure for effective cooling / heating of the lattice structure by an internal cooling / heating system. The channels defined inside the adsorption structure allow for the flow of coolant when the adsorption structure is maintained at a low temperature during the adsorption step, and allow for the flow of heat during the desorption step when the adsorption structure must be heated to release the byproducts from the lattice structure.

[0035] Embodiments of the present disclosure provide an adsorption structure defined in a portion of a semiconductor processing tool (e.g., a plasma processing chamber) for removing byproducts released in the processing tool during processing of a substrate. In some cases, the adsorption structure may be defined on a portion of a chamber wall of a plasma processing chamber, or on a portion of an inner liner that lines the chamber wall of the processing chamber, or on a portion of a plasma confinement structure defined in the processing chamber, and the like. Regardless of which surface of the chamber the adsorption structure is defined on, the adsorption structure is defined to be aligned with a gap between an upper electrode (e.g., a showerhead) and a lower electrode (e.g., an electrostatic chuck, a pedestal, etc.) disposed in the chamber. It will be appreciated that similar adsorption techniques may be applied to any other chamber surface that has a high likelihood of accumulating process byproducts (e.g., a TCP window, an upper electrode, etc. disposed in the chamber).

[0036] A transformer coupled plasma (TCP) window is typically provided in the chamber to provide a vacuum seal. Conductive byproduct films present on the surface of the TCP window may reduce the efficiency of the electromagnetic current in the chamber, thereby damaging or adversely affecting the etching process. In order to avoid adversely affecting the etching process, it may be necessary to frequently clean the surfaces of the chamber (including the surfaces of the TCP window) to remove the deposited byproduct films. The frequency of cleaning can increase the considerable chamber downtime. In addition to the considerable chamber downtime, frequent cleaning may corrode the TCP window and shorten the service life of the TCP window. Therefore, by using an adsorption wall, the availability of byproducts for deposition on various surfaces in the chamber (including the TCP window surface) is reduced. This indirectly provides a positive side effect by helping to reduce the frequency with which the chamber surfaces also need to be cleaned.

[0037] Embodiments of the present disclosure relate to processing tools used in processing substrates using operations such as etching, deposition, plating, polishing, cleaning, spinning, etc., and produce byproducts that need to be removed. Some example processing tools in which adsorption structures can be implemented include plasma etching chambers, spin rinse chambers, metal plating chambers, cleaning chambers, bevel etching chambers, deposition chambers (e.g., physical vapor deposition (PVD) chambers, chemical vapor deposition (CVD) chambers, atomic layer deposition (ALD) chambers, plasma enhanced chemical vapor deposition (PECVD) chambers, etc.), atomic layer etching (ALE) chambers, ion implantation chambers, or any other semiconductor processing tool that may be associated with or used in the manufacture and / or production of semiconductor substrates that result in the release of byproducts. In addition, embodiments of the present disclosure are not limited to the examples provided herein, and can be practiced in different plasma processing systems that employ different configurations, geometries, and plasma generation technologies (e.g., inductively coupled systems, capacitively coupled systems, electron cyclotron resonance systems, microwave systems, etc.).

[0038] With the above general understanding of the present disclosure, the details of various embodiments will now be described with reference to the various drawings. It should be noted that similarly numbered elements and / or components in one or more drawings are intended to generally have the same configuration and / or function. It should also be noted that the drawings may not be drawn to scale, and in some cases, certain features or components may be exaggerated to illustrate and / or emphasize new concepts. Obviously, this embodiment can be practiced without some or all of these specific details. In other cases, well-known process operations are not described in detail to avoid unnecessary confusion of this embodiment.

[0039] Figure 1 A simplified block diagram of a processing tool 100 (e.g., a plasma etching chamber or module) for receiving a substrate and etching features on a substrate surface according to an embodiment of the present disclosure is illustrated. The plasma etching chamber (also referred to herein as a "chamber") 100 includes a top electrode 102 and a bottom electrode 104. The top electrode 102 is configured to be connected to one or more reactive gas sources (not shown) to provide (one or more) reactive gases to the chamber 100 and a power source (e.g., through a matching network (not shown) to a radio frequency (RF) power source (not shown)) to provide power to generate plasma in the chamber 100. The top electrode 102 can be a showerhead having a plurality of outlets defined on a bottom surface facing a top surface of the lower electrode 104 to provide (one or more) reactive gases to a plasma processing region 106 defined in the chamber 100. The lower electrode 104 can be an electrostatic chuck or pedestal that provides a support surface to receive and support a semiconductor substrate (or referred to herein simply as a substrate or alternatively as a wafer) during processing. The lower electrode can be grounded. In alternative embodiments, the upper electrode 102 may be grounded and the lower electrode 104 may be powered by an RF power source or any other power source. The plasma etching chamber 100 is connected to a pump 107 for removing the reactive gas(es) from the chamber 100 .

[0040] A gap is formed between upper electrode 102 and lower electrode 104 to allow plasma to be formed from the reactant gas(es) supplied to chamber 100. The gap defines a plasma processing region 106 that covers an area bounded at the top and bottom by upper electrode 102 and lower electrode 104, with side boundaries defined on sides defined between outer edges of upper electrode 102 and lower electrode 104. The plasma formed from the reactant gas is used to etch features on a top surface of a substrate received on lower electrode 104. Byproducts released during the etching operation, such as polymers and other particles, may adhere to portions of chamber wall 105 aligned with gap 106 or other surfaces.

[0041] To better control the adsorption and desorption of particles and other byproducts released during substrate processing, an adsorption structure 110 is defined in a portion of the wall 105 of the chamber 100 that is aligned with the plasma processing region (i.e., gap) 106. The adsorption structure 110 is designed as an adsorption wall that is used to selectively adsorb (during processing) and desorb (during cleaning) gases in the chamber, for example, adsorbing byproducts while ensuring that the reactive gas(es) do not condense on the surface of the adsorption structure 110. The adsorption structure 110 includes multiple components and is connected to a pump 107 via a vacuum line 108.

[0042] Figure 1A An exemplary adsorption structure 110 portion is shown in accordance with one embodiment, which is defined by Figure 1 The adsorption structure 110 is shown in a portion of the wall 105 of the chamber 100. The adsorption structure 110 is used to perform an adsorption step and a desorption step. The adsorption step is performed during substrate processing, while the desorption step is performed after the substrate has been processed and when the adsorption structure 110 must be cleaned. The adsorption structure 110 includes a plurality of layers with different characteristics, which are selectively joined to perform the adsorption step and the desorption step. For example, the adsorption structure 110 includes an inner portion 111 in which one or more heating elements 115 are embedded. In one embodiment, the heating element 115 can be a resistive heater. The one or more heating elements 115 can be connected to a heat source by a heating cable and used to heat the adsorption structure 110 to a desired temperature during the desorption step.

[0043] The adsorption structure 110 also includes an intermediate portion 112 disposed adjacent to the inner portion 111. A channel 122 is defined in the intermediate portion 112 to allow coolant to flow therethrough to maintain the adsorption structure 110 at a low temperature during the adsorption step. The size of the channel 122 may depend on the type of coolant used and the flow rate of the coolant required to cool the adsorption structure 110. For high flow rates, the channel size may be designed to be larger, and for low flow rates the channel 122 may be designed to be smaller in diameter. The temperature to which the adsorption structure 110 is cooled during the adsorption step depends on the type of process performed in the chamber, the condensation temperature of the (one or more) reaction gases, the type of byproducts being released, etc. The channel 122 may be part of a coolant flow delivery network 110a defined in the intermediate portion 112. The coolant flow delivery network 110a includes one or more channels through which coolant from a coolant source circulates. Reference will be made to Figure 2A and 2B The details of the coolant flow delivery network 110a are described in detail.

[0044] The adsorption structure 110 also includes a lattice structure defined adjacent to the middle portion 112. The example lattice structure 114 is Figure 1A. In some embodiments, the lattice structure 114 and the inner and middle portions are made of a single type of material. In alternative embodiments, the lattice structure 114 may be made of one type of material, while the inner and middle portions may be made of another type of material. The lattice structure 114 includes a network of interconnected beams having openings defined in a plurality of layers, wherein each layer of the lattice structure 114 includes a plurality of openings. The lattice structure 114 is defined such that an inner layer of openings of the lattice structure 114 is disposed adjacent to the middle portion 112 and an outer layer of openings of the lattice structure 114 faces an interior region of the chamber 100. The lattice structure 114 is designed such that the size of the openings of each layer gradually increases, starting from an inner layer having the smallest size openings to an outer layer having the largest size openings. The size of the openings in each layer may be defined according to the type of byproducts to be adsorbed. Alternatively or additionally, the size of the openings of each layer may depend on the size of the gap defining the plasma processing region 106 within the chamber 100. Because different chambers 100 have gaps of different sizes, the size of the openings in each layer of the lattice structure 114 may vary based on the size of the gap (ie, plasma processing region) 106 defined between the upper electrode 102 and the lower electrode 104 .

[0045] exist Figure 1 In the illustrated example chamber 100 , the adsorption structure 110 is shown disposed directly on the chamber wall 105 in a portion aligned with the gap 106 between the upper electrode 102 and the lower electrode 104 . Figure 1 A vertical cross-sectional view of the chamber 100 is shown showing adsorption structures 110 disposed on both sides of the chamber wall 105. The adsorption structure 110 can be defined as a single piece disposed in the portion of the chamber wall 105. In this example chamber, the area between the outer edges of the upper electrode 102 and the lower electrode 104 and the chamber wall 105 is shown as open. In another embodiment, the adsorption structure 110 can be defined in a portion of a liner defined in the chamber 100. The liner is defined on the inside of the chamber wall 105 and can extend parallel to the chamber wall 105. This embodiment of the adsorption structure 110 defined in a portion of the liner will be described in detail with reference to Figures 4 and 5.

[0046] In an alternative embodiment, a plasma confinement structure, such as a set of confinement rings, is defined to extend between the outer edge of the upper electrode and the outer edge of the lower electrode within the chamber 100. The confinement rings are a set of parallel rings that extend to close the gap 106. The confinement rings can be arranged in a horizontal orientation and extend vertically between the upper electrode and the lower electrode. Fig. 6AThe implementation details of the adsorption structure 110 in a chamber having a confinement ring are discussed in more detail. In another embodiment, the plasma confinement structure can be a C-shaped shield that is defined to extend between the outer edge of the upper electrode and the outer edge of the lower electrode, such that the C-shaped shield surrounds the gap 106. In this embodiment, the adsorption structure 110 is defined in a portion of the C-shaped shield. Figure 6B Details of this embodiment having a suction structure 110 defined on a C-shaped shield are discussed in more detail in .

[0047] The lattice structure is connected to a vacuum line 108, which is coupled to a pump 107. The vacuum applied by the pump 107 in conjunction with the lattice structure 114 creates a low pressure region in the adsorption structure 110. This low pressure region causes byproducts to flow to the lattice structure 114 and be removed through the vacuum line 108 while minimizing the loss of the reactant gas(es) from the chamber 100. The lattice structure 114 having an increased surface area ensures that a maximum amount of byproducts are adsorbed on the lattice structure 114 while reducing the frequency with which cleaning needs to be performed, thereby increasing throughput. For example, in Figure 1 and 1A In the example embodiment shown, the plasma generated within the chamber 100 has a pressure of approximately 40 mTorr, while the vacuum provided by the pump 107 allows a local pressure gradient to be defined at the lattice structure, from approximately 40 mTorr at the outer layer exposed to the plasma processing region 106 to approximately 20 mTorr at the inner layer connected to the vacuum conduit and vacuum line 108. This pressure gradient facilitates the flow of byproducts to the pump 107. The above-mentioned plasma pressure and pressure gradient are provided by way of example only and should not be considered limiting. When (one or more) gases pass through openings of different sizes, particles and other byproducts released into the chamber during processing of the substrate are absorbed by the lattice structure. The architecture of the lattice structure is designed so that its effective thermal conductivity is high enough to allow rapid cooling and heating of the lattice beams. Reference will be made to Fig. 7A and 7B Example lattice structures having lattice beams are described in detail.

[0048] For example, a larger opening in the outer layer facing the interior of the chamber can help a larger amount of byproducts enter the inner layer of the lattice structure and ensure that the byproducts do not gather at one point. In some embodiments, the lattice structure can have a rough surface finish to improve the adhesion of byproducts to the lattice structure 114, which also helps to delay the micro-fracture of the deposited film on the lattice structure. In an alternative embodiment, the lattice structure can be anodized (i.e., coated) to improve the adhesion of byproducts and their recovery ability in a harsh plasma environment. In some embodiments, the lattice structure is made of aluminum. The embodiment is not limited to aluminum for constructing the lattice structure, but can include any other material that can provide the function of the lattice structure defined herein. In some embodiments, the inner part and the middle part can also be constructed using aluminum. In some embodiments, the low pressure area defined in the lattice structure enables the adsorbed byproducts to diffuse from the outer layer into the inner layer of the lattice structure 114, thereby allowing additional byproducts to be adsorbed on the outer layer. Cooling and vacuum flow of the adsorption structure 110 are performed during substrate processing in the chamber 100.

[0049] A main vacuum line 113 is defined between the chamber 100 and the pump 107 to exhaust reaction gas(es) and other chemicals from the chamber 100. A first end of the main vacuum line 113 is coupled to the turbo pump 107, and a second end of the main vacuum line 113 is connected to a bottom portion of the chamber 100.

[0050] In some embodiments, a pressure sensor 131 is disposed along the vacuum line 108 between the adsorption structure 110 and the pump 107. The pressure sensor 131 is used to monitor the pressure of the material leaving the adsorption wall via the vacuum line 108 and, in one embodiment, may be configured to generate a signal to a controller in communication with the pressure sensor 131 of the chamber 100 when the pressure drops below a predetermined threshold level. The drop in pressure may indicate the amount of byproducts that have been deposited on the lattice structure, thereby preventing the flow of (one or more) gases to the vacuum line 108. When such a drop in pressure of (one or more) gases flowing in the vacuum line 108 is detected, a cleaning operation needs to be performed and the signal from the pressure sensor 131 may be used by a controller (not shown) to schedule the cleaning operation. In another embodiment, the pressure sensor may periodically provide the measured pressure of (one or more) gases to the controller, which may then use the pressure sensor readings to determine when cleaning is needed.

[0051] The predefined threshold level may be expressed as a pressure value below a certain value expressed in psi, or as a percentage (e.g., below 40%) of an initial pressure value in the vacuum line 108, etc. The predefined threshold level may be provided as one of the chamber parameters. The controller may be a device communicatively connected to the computing device or may be an integral part of the computing device. The controller for managing chamber operations using a plurality of chamber parameters may initiate a cleaning operation based on a signal from the pressure sensor 131. Reference will be made to Fig. 9 Describes in detail the different components of the controller and their functions.

[0052] In one embodiment, in addition to the pressure sensor 131, a valve 132 may be provided along the vacuum line 108 between the pressure sensor 131 and the pump 107 to control the pressure of the vacuum line 108 on the adsorption structure 110. The valve 132 is configured to control the operation of the vacuum line 108. The valve 132 may be of any type that is operated using a pneumatic or any other form of actuator, such as a gate valve, a stop valve, a check valve, a plug valve, a ball valve, a butterfly valve, etc. The above examples of valves are provided as samples and should not be considered exhaustive or limiting.

[0053] When it is necessary to perform a desorption step to clean the accumulation on the lattice structure 114, selected components of the adsorption structure 110 are used. For example, the desorption step is performed using a heating element from the inner portion 111 and a vacuum line 108 from the lattice structure 114. The desorption step is performed when there is no substrate in the chamber 100 (i.e., using a WAC / CWAC process). During the desorption step, the valve 132 in the vacuum line 108 is adjusted to close the local pressure. The heating element 115 included in the inner portion 111 is activated to provide heat to the adsorption structure 110 to heat the adsorption structure 110 to a temperature sufficient to release the byproducts that have adhered to the lattice structure 114 when WAC / CWAC is being performed. It should be noted that the heating element 115 is one way to heat the adsorption structure 110, and other ways of heating the adsorption structure 110 may also be used, such as a resistive heater, a hot fluid flow through an appropriate channel, etc. The temperature to which the lattice structure 114 must be heated depends on the type of process performed in the chamber 100, the type of byproducts released, the type of materials used in the lattice structure 114, etc. The released byproducts are then purged out of the chamber 100. In some embodiments, the chamber 100 may have some remaining (one or more) reactive gases from substrate processing, and the byproducts released from the surface of the lattice structure 114 may mix with the remaining (one or more) reactive gases and be purged out of the chamber 100. In some embodiments, the byproducts may be purged through the main vacuum line 113. After the desorption step, the chamber 100 is ready to receive a substrate for processing.

[0054] In some embodiments, the inputs and outputs of the various components of the adsorption structure 110 may be routed through the back side (i.e., the outside) of the chamber wall 105. In alternative embodiments, if the adsorption structure 110 is defined on a portion of the liner, the inputs and outputs may be routed through the lower electrode 104 or through the upper electrode 102 or the outside of the liner. In some embodiments, both the inputs and outputs of the adsorption structure 110 may be routed through a facility line defined for the chamber 100 through which other inputs and outputs to the chamber 100 are routed.

[0055] Figure 2 Various components of an example adsorption structure integrated into a portion of the chamber wall 105 of the chamber 100 in one embodiment are illustrated. The components of the adsorption structure 110 include an inner portion 111, an intermediate portion 112, and a lattice structure portion 114. The adsorption structure 110 is used to perform two steps - an adsorption step and a desorption step, and the two steps are performed using different components of the adsorption structure 110. The adsorption step is used to adsorb byproducts generated in the chamber 100 and is performed during substrate processing. The intermediate portion 112 and the lattice structure 114 of the adsorption structure 110 are used to adsorb the byproducts into the lattice structure 114. The desorption step is used to release the adsorbed byproducts from the lattice structure 114 to remove them from the chamber 100, and is performed as part of the WAC / CWAC process when there is no process wafer in the chamber 100. However, a dummy wafer can be placed on the ESC during CWAC to protect the ESC from damage caused by the plasma. The inner portion 111 is used to provide heat to the lattice structure 114 during the desorption step.

[0056] Figure 2A The coolant flow delivery network 110a defined in the middle portion 112 is shown. Figure 2The coolant flow delivery network 110a is used to cool the adsorption structure 110 to a temperature that is cold enough to adsorb byproducts (e.g., etching byproducts from etching operations) but not yet cold enough to condense one or more reactive gases used in the chamber 100 to generate plasma. Therefore, the coolant flow delivery network 110a includes a coolant inlet 118 to receive coolant from a coolant source (not shown), one or more channels 122 to circulate the coolant, and a coolant outlet 119, through which the coolant flows out and is reintroduced through the coolant inlet 118. The temperature used to cool the adsorption structure 110 can be defined based on the type of material used to construct the adsorption structure 110, the type of (one or more) reactive gases used in the chamber 100, the type of byproducts generated, etc. The coolant flow delivery network 110a can be manufactured as a single unit using a machine tool (e.g., a 3D printer) and integrated with other components of the adsorption structure 110. A plurality of O-rings 120 are provided to allow the coolant flow delivery network component 110a to be coupled with the remaining components of the adsorption structure 110.

[0057] The lattice structure 114 includes a network of openings distributed in a plurality of layers, with an inner layer 114a of the lattice structure 114 disposed adjacent the middle portion 112, and an outer layer 114b of the lattice structure 114 facing an interior region of the chamber 100. The size of the openings in each layer increases gradually from the inner layer (i.e., the openings in the inner layer) 114a to the outer layer 114b (i.e., the openings in the outer layer). The size of the openings in the lattice structure 114 is defined based on a plurality of variable factors, such as the type of byproducts released, the type of process performed in the chamber 100, the type of (one or more) reactive gases used in the chamber 100, the amount of gap defined between the upper electrode 102 and the lower electrode 104, to name a few. Of course, the above list of variable factors is provided as an example, and a fewer or greater number of variable factors may be considered in determining the topology of the lattice structure.

[0058] Figure 2B Picture shows Figure 210. An expanded view of section "BB" of the vacuum line network 110b shown in FIG. The vacuum line network 110b is coupled to the inner layer 114a of the lattice structure 114. The vacuum line network 110b includes a vacuum inlet 108a, which is coupled to the pump 107 through the vacuum line 108. The vacuum line 108 extends between the pump 107 and the inner layer 114a of the lattice structure 114, such that a first portion of the vacuum line 108 is defined outside the adsorption structure, and a second portion of the vacuum line 108 is defined within a middle portion where it connects to a vacuum conduit network 108b defined within the adsorption structure 110. The pump 107 coupled to the first portion of the vacuum line 108 is also disposed outside the adsorption structure 110. The pump 107 provides a vacuum to create a low pressure area in the area covered by the lattice structure 114 to help release the more difficult to condense byproducts within the chamber 100. A pressure sensor 131 defined along the vacuum line 108 and disposed between the lattice structure 114 and the pump 107 is used to monitor the pressure of the gas(es) exiting the chamber 100 through the vacuum line 108 and to generate a signal when the suction level provided by the vacuum line 108 is adversely affected (i.e., the pressure of the gas flowing through the vacuum line 108 drops below a predetermined threshold), thereby initiating a desorption step. The drop in the pressure of the gas flowing in the vacuum line 108 may indicate the amount of byproduct film accumulated on the lattice structure 114. The coolant flow network 110a and the vacuum line network 110b may be created as separate units and coupled to the other components of the adsorption structure 110 using a set of O-rings 120. The intermediate portion having the coolant flow delivery network 110a and the vacuum line network 110b and the lattice structure 114 is used to adsorb byproducts within the lattice structure 114 during the adsorption step.

[0059] In one embodiment, components included in the interior portion 111 are used to release byproducts that have adhered to the lattice structure 114 during the desorption step. The interior portion 111 includes one or more heating elements 115, which can be connected to each other and to a power source via a heating cable 117. The heating element 115 can be a resistive heater or any other type of heater for heating the adsorption structure 110 to a temperature sufficient to release the byproducts. During the desorption step, the low pressure generated locally by the vacuum from the pump 107 is turned off, and WAC / CWAC is performed while the heating element 115 is turned on. The released byproducts are removed from the main vacuum line 113 defined between the bottom of the chamber 100 and the pump 107. The released byproducts can be removed together with any remaining (one or more) reaction gases. Alternatively, a second gas can be introduced into the chamber 100 from a second gas source through a corresponding gas feed (not shown) to better help remove the byproducts released by the heated lattice structure 114 during the WAC / CWAC.

[0060] Each component, the inner portion 111, the middle portion 112, and the lattice structure 114 can be created separately using a machine tool with the necessary channels to convey input and output from the inner components, and can be coupled together using O-rings to form a single adsorption structure unit. In addition, as previously described, the coolant flow delivery network 110a and the vacuum line network 110b can be created as separate units and coupled to the middle portion 112, and the middle portion 112 is coupled to the lattice structure 114 on one side and coupled to the inner portion on the opposite side using corresponding O-rings 120.

[0061] A portion of the chamber wall 105 of the chamber 100 aligned with the gap 106 defined between the upper and lower electrodes (102, 104) is identified, and the adsorption structure 110 is integrated into this portion of the chamber wall 105. The inner side of this portion of the chamber wall 105 includes a plurality of O-rings 120 to allow the adsorption structure 110 to be tightly coupled to the inner side of the chamber wall 105. The chamber wall 105 also includes a plurality of channels to convey inputs and outputs of the adsorption structure 110, and these channels are aligned with corresponding input / output channels defined in the adsorption structure 110. For example, a first channel (coolant inlet channel 118a) can be defined in the chamber wall 105 to convey a coolant inlet 118, a second channel 117a can be defined to convey a heating cable 117, a third channel 108c can be defined to convey a vacuum line 108, and a fourth channel 119a can be defined to convey a coolant outlet 119. In alternative embodiments, various inputs and outputs of the adsorption structure 110 may be routed downwardly through the lower electrode 104 rather than through the chamber wall 105. In other embodiments, various inputs and outputs of the adsorption structure 110 may be routed through the upper electrode 102.

[0062] In some embodiments, the various components of the adsorption structure 110 can be manufactured using machine tools (e.g., computer numerical control (CNC) machines or three-dimensional (3D) printer tools). In other embodiments, the components of the adsorption structure 110 can be manufactured using a 6-axis 3D printer. In some embodiments, the different components of the adsorption structure are made of a single material (e.g., aluminum). In alternative embodiments, each of the different components can be made of a different material (e.g., metal or ceramic). In this embodiment, the lattice structure 114 can be made of aluminum, and the inner portion 111 and the middle portion 112 can be made of a different material than aluminum. The inner portion 111 and the middle portion 112 can be made of a conductive material (i.e., metal) other than aluminum. The lattice structure can also be coated with a secondary second material.

[0063] Figure 3An alternative embodiment of an adsorption structure 110 for capturing and removing byproducts is illustrated. In this alternative embodiment, the cleaning (i.e., the desorption step) of byproducts that have adhered to the lattice structure 114 is accomplished by using a gas purge automated cleaning (GPAC) that releases byproducts (e.g., polymer films) that have adhered to the surface of the lattice structure 114 by blowing a high-pressure gas (e.g., nitrogen) from the back side (i.e., the inner layer 114a) of the lattice structure 114. The high-pressure gas can exert sufficient force on the byproducts to release the byproducts from the lattice structure 114. In this embodiment, the desorption step can rely on high-pressure gas rather than a heating element 115 to release byproducts that have adhered to the lattice structure 114. In order to minimize design changes, an existing vacuum line 108 that is already connected to the inner layer 114a of the lattice structure 114 can be used to supply the high-pressure gas, rather than adding an additional channel. This design is Figure 3 . The third line 109 is defined such that a first end of the third line 109 is coupled to the vacuum line 108 and a second end is connected to a gas source, such as a nitrogen gas source 121. The valve in the third line 109 and the valve 132 in the vacuum line 108 can work together to (a) shut off the low pressure from the pump 107, and (b) control the rate at which nitrogen flows into the chamber 100. The nitrogen supplied from the gas source 121 is configured to flow from the inner layer 114a of the lattice structure 114 to the outer layer 114b. In some embodiments, a sensor (not shown) may be used to ensure that nitrogen is delivered to the lattice structure 114 at a specific pressure or flow rate. The signal from the pressure sensor may be used to adjust the N2 flow rate by actively controlling the GPAC valve defined on the third line 109.

[0064] During the desorption step, the high pressure flow of nitrogen forces the byproducts that have adhered to the surface of the lattice structure to be released into the chamber 100. The released byproducts are removed (i.e., purged) via the main vacuum line 113 using nitrogen by operating a corresponding valve on the main vacuum line 113. In an alternative embodiment, a separate gas inlet line may be defined such that a first end of the separate gas inlet line is connected to a gas source and a second end is connected to the back side (i.e., the inner layer 114a) of the lattice structure 114. Figure 1 As shown, Figure 3 The adsorption structure in is shown as being defined in a portion of the chamber wall 105.

[0065] exist Figure 3In the illustrated embodiment, during the adsorption step, the vacuum line 108 continues to be used to provide a low pressure region on the lattice structure 114 so that the byproducts can be adsorbed by the lattice structure 114. The vacuum line 108 forms a second outlet for the byproducts to escape. The large surface of the lattice structure 114 and the vacuum introduced through the vacuum line 108 result in a low pressure gradient at the lattice structure 114. Therefore, during the adsorption step, the low pressure region at the lattice structure 114 ensures that the maximum amount of byproducts is captured and the minimum amount of (one or more) reactant gases are lost.

[0066] In some embodiments, the desorption step may use both the heating element 115 and the high pressure gas to clean the byproducts accumulated on the lattice structure 114. In such an embodiment, GPAC may be used in combination with WAC / CWAC to release and remove byproducts that have been deposited on the lattice structure 114. The heating element 115 in the inner layer 111 of the adsorption structure 110 may be used to heat the adsorption structure 110, and the high pressure gas from the gas source 121 may be introduced through the vacuum line 108 and the vacuum conduit coupled to the inner layer 114a of the lattice structure 114. The effects of both heat and high pressure gas may help release byproducts from the lattice structure 114 more quickly. The released byproducts may be removed through the main vacuum line 113. In other embodiments, it may be necessary to alternately perform a combination of WAC or CWAC and GPAC to obtain a more effective desorption.

[0067] Figure 4A An alternative embodiment of a chamber 100 is illustrated in which a suction structure 110 is disposed. In this embodiment, the chamber 100 includes a liner 125 defined along the entire inner side of the chamber wall 105, and the suction structure 110 is defined in a portion of the liner 125. The suction structure 110 is created as a segmented piece having a defined length and width, and Figure 4AThe embodiment shown in includes adsorption structure portions 110 that are evenly distributed along different portions of the liner 125 and arranged orthogonally to each other. The portion of the liner 125 that defines the adsorption structure portion 110 is identified as being aligned with the gap between the upper electrode and the lower electrode. The portion of the liner 125 is identified based on the possibility of byproducts adhering to the liner 125. In some embodiments, the input and output of the adsorption structure portion 110 are transmitted to the back side of the inner wall. The transmitted input and output are ultimately connected to a controller (not shown) along with other facility lines. The operating parameters provided to the controller include parameters for operating the adsorption structure 110. Some operating parameters for controlling the adsorption structure 110 may include the pressure difference that needs to be provided by the pump along the vacuum line 108, the temperature to which the coolant needs to cool the adsorption structure during the adsorption step, the temperature to which the heating element needs to heat the adsorption structure during the desorption step, and the like. As previously described, these operating parameters can, for example, depend on the type of operation being performed in chamber 100, the type of reactant gas(es) used to perform the operation in the chamber, the type of byproducts being released, the type of substrate being used, the size of the gap defined between the upper and lower electrodes, the size of the openings in different layers of the lattice structure, and the like.

[0068] exist Figure 4A In the illustrated embodiment, the inputs and outputs (i.e., vacuum line 108, heating cable 117, coolant inlet 118, coolant outlet 119) from each adsorption structure portion 110 are respectively conveyed to the back side of the chamber wall 105 through corresponding channels defined in the liner 125 and the chamber wall 105. Alternatively, similar types of inputs and outputs from each adsorption structure portion 110 can be connected together and conveyed to the rear of the liner 125 or the rear of the chamber wall 105 through the channels in the liner 125 and the chamber wall 105. In an alternative embodiment, the inputs and outputs from each adsorption structure portion 110 can be conveyed to the rear of the liner 125, then down to the lower electrode 104 and out through the channels that house the lower electrode 104 and / or the utility lines of the chamber 100. Therefore, based on the design of the chamber 100 and the adsorption structure portion 110, the inputs and outputs of the adsorption structure portion 110 are appropriately conveyed to the controller to allow the controller to manage the functions of the adsorption structure 110.

[0069] Figure 4B Picture shows Figure 4A An alternative embodiment of the adsorption wall structure is shown in FIG. In this embodiment, the adsorption structure 110 is arranged along the entire section (360°) of a portion of the liner 125, which is defined along the entire inner side of the chamber wall 105. The adsorption structure is in the form of a segmented piece with a defined length and width, and Figure 4BThe embodiment shown in shows four adsorption structure portions 110, each covering 90 degrees and distributed orthogonally to each other. In some embodiments, the adsorption structure can be made of a single piece covering the entire section. The portion of the liner 125 in which the adsorption structure portion 110 is disposed is aligned with the gap between the upper electrode and the lower electrode. The input and output of the adsorption structure portion 110 (i.e., the vacuum line 108, the heating cable 117, the coolant inlet 118, and the coolant outlet 119) are transmitted through corresponding channels defined in the inner wall 125 and the chamber wall 105, respectively. The transmitted input and output are ultimately connected to a controller (not shown) along with other facility lines to allow the controller to manage the functions of the adsorption wall. The transmission of inputs and outputs is provided as an example, and reference may also be used. Figure 4A Describes other ways of transmitting input and output.

[0070] Figure 5 An alternative embodiment of a chamber 100 including a sorption structure 110 is illustrated. Figure 5 The embodiment shown in FIG. 4 includes an adsorption structure 110 defined as small segments. These adsorption structure portions 110 are distributed along the liner 125. However, unlike the adsorption structure portions of FIG. 4 that are orthogonally separated from each other, Figure 5 The adsorption structure parts are arranged close to each other at a specific separation angle of about 5° to about 10°. The small separation angle between the adsorption structure parts 110 is to ensure that the liner 125 has enough surface area to be covered by the adsorption structure part 110, thereby preventing byproducts from adhering to the surface of the liner 125. In addition, it is easier and cheaper to manufacture smaller sections of the adsorption structure 110 using a 3D printer or other machine tools. The inlet / outlet from each part is conveyed out separately, or each type of inlet / outlet can be combined and conveyed out. Although smaller parts may be cost-effective for manufacturing, the conveying of the inlet / outlet may increase cost and / or complexity. An appropriate design can be selected according to the individual chamber design. In an embodiment in which the adsorption structure part is manufactured using a 3D printer, the rear side wall of the adsorption structure 110 can be straight and the front side wall is curved, or both the rear side wall and the front side wall can be curved to match the curvature of the liner, or both the rear side wall and the front side wall can be straight. In embodiments where both the back and front sides of the segmented adsorption structure 110 are straight, the small size of the segmented adsorption structure can allow the adsorption structure to follow the curvature of the liner 125. Alternatively, the adsorption structure portion can be molded into a rectangular block using a 3D printer. Figure 5 This embodiment can also be extended to an embodiment in which the adsorption structure portion 110 is directly disposed on the chamber wall 105 in a portion aligned with the gap defined between the upper electrode and the lower electrode.

[0071] Fig. 6AAnother embodiment is shown in which an adsorption structure is disposed on a chamber wall 105 of the chamber 100 and disposed outside of a plasma confinement structure, such as plasma confinement rings 126, defined in the chamber. In this embodiment, a set of plasma confinement rings 126 are defined to extend between the peripheral edge of the upper electrode 102 and the peripheral edge of the lower electrode 104, such that the plasma generated by the ionization of the (one or more) reactant gases is confined within a small plasma processing region 106 defined between the confinement rings 126 and between the corresponding surfaces of the electrodes 102, 104. The confinement rings 126 can be composed of a dielectric material such as silicon dioxide or quartz. Spacers are defined between adjacent rings such that the channels defined by the spacers provide a path for the plasma to escape. The spacers can be composed of a dielectric material such as silicon dioxide or quartz. Alternatively, the spacers can be composed of a conductive material. The adsorption structure 110 is confined outside of the area defined by the confinement rings 126 and is aligned with the confinement rings 126 so that plasma and byproducts escaping from the plasma processing chamber can be adsorbed in the lattice structure 114 of the adsorption structure 110 .

[0072] Figure 6B An alternative embodiment of a chamber having a plasma confinement structure is illustrated in which one or more adsorption structures 110 are provided. In this embodiment, the upper electrode is connected to a gas source (not shown) to provide (one or more) reactive gases to the plasma processing region 106, and to a power source (not shown) such as an RF power source to generate plasma from (one or more) reactive gases. The lower electrode is electrically grounded. A plasma confinement structure in the form of a C-shaped shield 127 extends from the outer edge of the top outer electrode 102 to the outer side surface of the bottom electrode 104 to provide additional plasma confinement. The C-shaped shield 114 has a plurality of holes defined along the bottom surface to allow (one or more) gases and plasma to flow out of the C-shaped shield 127. In this embodiment, the C-shaped shield 127 is grounded. A portion of the C-shaped shield 127 aligned with the gap between the upper and lower electrodes (102, 104) is identified and the adsorption structure 110 is defined in the identified portion of the C-shaped shield 127. A vacuum line 108 extending from the adsorption structure 110 to the outside of the chamber 100 connects the adsorption structure 110 to the pump 107. In some embodiments, the vacuum line 108 includes a pressure sensor 131 defined between the adsorption structure 110 and the pump 107, and a valve 132 to control the vacuum level applied through the vacuum line 108. A main vacuum line 113 is disposed between the bottom surface of the chamber 100 and the pump 107, which provides a primary route for exhausting reactive gases, neutral species, and byproducts escaping from the plasma processing region 106.

[0073] In one embodiment, a lattice structure can be generated using a 3D printer. The 3D printer can manufacture the topology of the lattice structure, carefully defining the topology of the lattice unit cells in each layer of the lattice structure (e.g., diameter and length of beams, arrangement of beams, arrangement of unit cells, etc.) to maximize the surface area of ​​the adsorption structure, minimize the leakage of plasma into the lattice structure, and control the temperature distribution through the thickness of the lattice structure. In some embodiments, a combination of other architectural materials can be used, such as open-cell metal foams, honeycomb structures, or perforated plates, instead of 3D printing lattice structures.

[0074] In some embodiments, the lattice structure is a metal lattice. In some other embodiments, an open-cell metal foam with an optimized topology (pore size, through-porosity, porosity, surface roughness, etc.) can be used instead of a metal lattice. Due to the low cost of metal foams, they can be used as consumable parts, where the metal foam is removed from the chamber after a period of use and replaced with a new one manually or by a wafer handling robot. The lattice structure or metal foam will have an optimized surface roughness to further help delay microfracture of the deposited byproduct film. Other structural materials, such as a honeycomb structure with a perforated plate, can also be used instead of metal foam to increase the wall surface area. It will be understood that in some embodiments, embedded heating elements, side vacuum networks, and GPAC may not be required.

[0075] Fig. 7A A simple block diagram of an exemplary framework material (eg, honeycomb structure) used in an adsorption wall to provide a large adsorption wall surface area for byproducts released in the adsorption chamber in one exemplary embodiment is illustrated. Figure 7B An example of a framework material designed for an adsorption wall of a chamber to adsorb byproducts released in the chamber is illustrated. In this embodiment, the lattice structure includes a perforated top plate 702 that forms an outer layer or top layer of the lattice structure. A honeycomb core 704 is disposed below the perforated top plate 702. The honeycomb core 704 can be filled with metal balls 704a to achieve a larger surface area. The metal balls 704a in the honeycomb core 704 are pre-compressed by the perforated top plate 702. In an example embodiment, the pre-compression is accomplished using metal bolts to establish good contact so that good thermal conduction can be achieved. It should be noted that metal bolts are an example of a fastening structure that can be used to attach the honeycomb core 704 to the perforated top plate 702, and other types of fastening materials, or structures or devices may also be used. The perforated back plate 706 is Fig. 7A and 7B The bottom side of the lattice structure of the framework material is formed in the embodiment shown. In alternative embodiments, a solid backing plate can be used instead of a perforated backing plate. The perforated backing plate 706 can be used to connect to the middle part of the adsorption wall. In some embodiments, the perforated top plate 702 and the honeycomb core 704 can be cleaned by WAC. The metal balls 704a can be consumables and can be replaced regularly. Fig. 7A and 7B The lattice structure shown in can be assembled using common off-the-shelf parts to reduce costs. The lattice structure in this embodiment is a ball-filled hexagonal honeycomb core 704 sandwiched between a perforated top sheet 702 and a perforated back sheet 706.

[0076] The controller is used to manage the main operating parameters during the adsorption step and the desorption step. These main operating parameters may be affected by the design parameters selected for successful adsorption and removal of byproducts. For example, some of the main operating parameters that may have to be controlled during the adsorption step may include the wall temperature and the vacuum pressure of the vacuum line. Similarly, the main operating parameters that may have to be controlled during the desorption step may include the temperature to which the adsorption structure needs to be heated, the duration of the desorption step, the WAC / CWAC formula, and the frequency at which the desorption step needs to be performed. For example, for the adsorption step, the type of coolant selected can be based on the temperature to which the adsorption structure must be cooled during the adsorption step. Similarly, the coolant flow rate may depend on the type of coolant selected. The coolant delivery topology can be based on the coolant flow rate. Similarly, the lattice topology can be defined as the surface area provided for capturing byproducts. Along similar lines, the power used to heat the adsorption structure during the desorption step can be based on the temperature to which the adsorption structure must be raised and the duration of maintaining the raised temperature. The number of heating elements, the arrangement of the heating elements in the inner layer of the adsorption structure, and the spacing between the heating elements can be based on the power of the heating elements.

[0077] The controller is connected to various components of the plasma processing chamber, including the gas source, the bias RF source, the upper electrode, the lower electrode, the exhaust pump 107, and to different components of the adsorption structure, including pressure sensors, valves, gas sources, heating elements, coolant sources, etc. The controller controls the flow of etching gas into the plasma processing chamber, the chamber pressure, and the generation of RF power from the RF source, the upper electrode 102 and the lower electrode 104, and the exhaust pump 120. The controller also controls the vacuum level provided by the vacuum line 108, the flow of high pressure gas from the gas source (e.g., N2 gas source 121) to the lattice when high pressure gas is used, and the operation of valves (132, etc.) and sensors (e.g., 131, etc.) along the vacuum line. The vacuum line 108 provides an additional flow path from the chamber to remove byproducts, while the vacuum line 113 provides a conventional path for removing gases and byproducts from the chamber. The vacuum line 108 shown outside the chamber is connected to a network of vacuum conduits defined within the middle portion and connected to the inner layer 114a of the lattice structure 114 to remove byproducts from the chamber. The low pressure area defined by the vacuum line ensures that a minimum amount of reactant gas is removed from the chamber. The temperature at which the adsorption structure is set during the adsorption step depends on the type of gas used, the type of process being performed, and the type of process recipe used in the chamber. In an exemplary embodiment, the temperature can be determined based on the type of material used in the lattice structure, the size of the adsorption structure, the thermal conductivity of the lattice portion, the speed at which temperature increments are generated that affect the flow rate in the vacuum line, the process recipe being used, the amount of time that the temperature must be maintained, etc. In some embodiments, the desorption step can be performed after processing 100 substrates, depending on the process recipe and the type of process being performed in the plasma processing chamber. In other embodiments, the desorption step can be performed after processing a lesser or greater number of substrates.

[0078] In some embodiments, the topology of the lattice structure 114 is defined based on the amount of gap defined between the upper electrode and the lower electrode. Since different processing chambers (i.e., processing modules) may have gaps of different sizes between the upper and lower electrodes, the topology of the lattice structure is determined based on such gaps in different chambers. In one example embodiment, if the gap between the upper and lower electrodes is about 10 mm, the size of the lattice openings (unit cell characteristic length) in the outer layer 114b may be about 1 mm and the openings in the inner layer 114a may be about 0.1 mm. In another example embodiment, the gap between the electrodes may be between about 2" and about 3". In this embodiment, the size of each opening in the outer layer may be defined as about 1 / 10 of the gap size, and the size of each opening in the inner layer may be defined as about 1 / 100 of the gap size. In some embodiments, the adsorption structure is defined on a portion of the chamber wall or liner so that the bottom of the adsorption structure 110 is at a height that is consistent with or slightly above (e.g., about 1-3 mm below) the top surface of the lower electrode, and the top of the adsorption structure 110 is set at a height that is consistent with or slightly below (e.g., about 1-3 mm above) the bottom surface of the upper electrode, because the area between the upper and lower electrodes is the area where plasma is generated and byproducts are released. The large surface area and low temperature and low pressure areas define the characteristics of an adsorbent adsorption structure that can effectively remove byproducts. The pressure difference defined in the lattice structure is large enough to generate a suction field to attract "near field" particles (i.e., near the wall area), but not too large to affect "far field" plasma particles (i.e., particles contained in the plasma processing area). In addition to the surface area and low temperature characteristics, the opening network also helps to attract byproducts into the adsorption structure.

[0079] Figure 8 8 is a flow chart of a method for adsorbing and removing byproducts from a process chamber for processing a substrate in one embodiment. The method begins at operation 810, where an adsorption structure defined in a portion of a chamber wall of a process chamber is cooled to a first temperature. The process chamber can be an etching chamber for etching features on a surface of a substrate. Cooling of the adsorption structure is performed by circulating coolant from a coolant source through one or more channels of a coolant delivery network defined within a middle portion of the adsorption structure. The first temperature is defined to selectively adsorb gas species of interest, for example, defined to be above the condensation temperature of one or more reactive gases used in the process chamber, but cool enough to adsorb byproducts generated in the chamber during substrate processing.

[0080] In operation 820, a lattice structure is used to capture byproducts released in the chamber. The lattice structure is defined as adjacent to the second side of the middle portion. The lattice structure includes a network of openings defined in multiple layers, wherein each layer has multiple openings. The inner layer 114a of the lattice structure 114 is defined adjacent to the second side of the middle portion, and the outer layer 114b of the lattice structure 114 faces the inner area of ​​the processing chamber. The size of the openings in each layer of the lattice structure gradually increases from the inner layer 114a to the outer layer 114b, so that the outer layer provides a larger surface area for capturing byproducts. A vacuum line network coupled between the lattice structure and the pump provides a vacuum to create a low-pressure area in the lattice structure to adsorb byproducts. Some parts of the reaction gas may also be attracted to the low-pressure area together with the byproducts and removed by the vacuum line. However, the parameters of the system can be designed to minimize the leakage of (one or more) plasma reaction gases from the sidewalls. As more and more substrates are processed by the processing chamber, the accumulation of byproducts on the lattice structure increases. A pressure sensor disposed on a vacuum line between the lattice structure and the pump monitors the accumulation of by-products by measuring the pressure of the gas flowing to the pump via the vacuum line. Initially, when the lattice structure does not have any accumulation of by-products, the reactive gas used in the chamber flows easily to the pump via the vacuum line. However, as the accumulation of by-products on the lattice structure increases, the openings in the different layers of the lattice structure may become clogged with the by-products, slowing down the flow of the reactive gas in the vacuum line. Therefore, when the pressure of the reactive gas in the vacuum line measured by the pressure sensor drops below a predefined threshold level, it indicates that sufficient by-product accumulation has been detected on the lattice structure and it is time to perform a cleaning operation of the lattice structure.

[0081] In operation 830, as part of the cleaning operation (i.e., the desorption step), the adsorption structure is heated to a second temperature using a heating element disposed in an inner layer of the adsorption structure and WAC / CWAC is performed. GPAC may also be performed together with WAC / CWAC. The second temperature is defined based on the type of byproducts released in the process chamber, the type of reactive gas used in the process chamber, the time the adsorption structure must be heated, etc. When the lattice structure is heated to the second temperature, the byproducts are released from the surface of the lattice structure. The released byproducts mix with the residual gas in the process chamber.

[0082] In operation 840, the byproducts with any residual gases are removed from the process chamber through the main vacuum line 113 defined between the bottom side surface of the process chamber and the pump. Cooling of the adsorption structure and capture of byproducts are performed during processing of substrates in the process chamber, while heating and removal of byproducts are performed when no substrates are being processed in the chamber. As a result, during the cleaning operation, the local low pressure is turned off by turning off the vacuum applied through the vacuum line. Byproducts released from the lattice structure are removed through the main vacuum line 113.

[0083] Various embodiments discussed herein provide an adsorption structure design that can be implemented in a portion of a chamber wall to effectively remove byproducts from a process chamber in a controllable, repeatable, and consistent manner without opening the process chamber to the surrounding environment, while extending the time that the chamber can process wafers without cleaning. The lattice structure defined in the adsorption structure design provides a large surface area. In some embodiments, the entire adsorption structure is made of a conductive material. The conductive properties of the material allow the adsorption structure to provide a cold surface by flowing a coolant through it during adsorption operation, and to provide a hot surface by heating via an embedded heating element during WAC or GPAC during desorption. In some embodiments, the coolant that can be used to cool the adsorption structure can be liquid nitrogen. In alternative embodiments, the coolant can be any other type of coolant. A valve and / or other flow controller is provided on a vacuum line provided between the adsorption structure and the adsorption pump to control the low pressure area on the adsorption structure. The lattice structure can be designed to have a specific surface roughness to provide good adhesion quality between the byproducts and the lattice structure so that the byproducts can successfully adhere to the lattice structure. The topology of the lattice cells in the different layers of the lattice structure ensures that the byproducts are distributed over the surface of the lattice structure and are not concentrated at one point. In addition, the size of the openings also helps to define a good pressure gradient from the outer layer to the inner layer of the lattice structure. For example, if the plasma pressure defined in the processing chamber is about 40mTorr, the pressure gradient defined by the lattice structure can range from 40mTorr at the outer layer facing the inner area of ​​the processing chamber to about 20mTorr at the inner layer. Similar pressure gradients can be envisioned when plasmas of different pressures are used in the processing chamber. Those skilled in the art will be able to discover other advantages and benefits of the adsorption structure defined in a portion of the chamber wall of the processing chamber.

[0084] Fig. 9 A control module (also referred to as a "controller") 900 for controlling the above-described substrate processing system is shown. In one embodiment, the controller 900 may include some example components, such as a processor, a memory, and one or more interfaces. The controller 900 may be used to control various components and / or devices in the substrate processing chamber 100 based in part on the sensed values. By way of example only, the controller 900 may control one or more valves 902 (including Figure 1 , 3, 6A, 6B valves 132), filter heater 904 (including heating element 115), pump 906 (including pump 107) and other devices 908. The controller 900 receives sensed values ​​from, for example, a pressure gauge 910, a flow meter 912, a temperature sensor 914, a pressure sensor 131 (not shown) and / or other sensors 916. The controller 900 can also be used to control process conditions during precursor delivery, (one or more) reactive gas delivery, film deposition and feature etching. The controller 900 will typically include one or more memory devices and one or more processors.

[0085] The controller 900 can control the activities of the precursor delivery system and the deposition apparatus. The controller 900 executes a computer program including a set of instructions for controlling process time, delivery system temperature, pressure differential on filters, valve positions, robots and end effectors, gas mixing, chamber pressure, chamber temperature, wafer temperature, RF power level, wafer chuck or pedestal position, and other parameters of a particular process. The controller 900 can also monitor the pressure differential and automatically switch the vapor precursor delivery from one or more paths to one or more other paths. In addition, the controller 900 can use a pressure sensor 131 to monitor the pressure along the vacuum line 108 and generate a signal to perform a desorption step to clean the byproducts of the lattice structure 114 that has adhered to the adsorption structure 110. In some embodiments, a computer program stored on a memory device associated with the controller 900 can be used.

[0086] There will typically be a user interface associated with the controller 900. The user interface may include a display 918 (e.g., a display screen and / or graphical software display of apparatus and / or process conditions), and a user input device 920 (e.g., a pointing device, keyboard, touch screen, microphone, etc.).

[0087] Computer programs for controlling precursor delivery, deposition and other processes in a process sequence can be written in any conventional computer-readable programming language (e.g., assembly language, C, C++, Pascal, Fortran or other languages). The compiled object code or script is executed by a processor to perform the tasks identified in the program.

[0088] Control module (i.e., controller) parameters are related to process conditions such as filter pressure drop, process gas composition and flow rate, temperature, pressure, plasma conditions (e.g., RF power level and low frequency RF frequency), cooling gas pressure, and chamber wall temperature. Control module parameters may also include key operating parameters that affect design parameters.

[0089] The system software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects can be written to control the operation of chamber or process module components necessary to perform the deposition processes of the present invention. Examples of programs or program portions for this purpose include substrate positioning code, process gas control code, pressure control code, heating element control code, plasma control code, lift mechanism control code, robot position code, end effector position code, and valve position control code.

[0090] The substrate positioning program may include program code for controlling chamber components used to load the substrate onto a pedestal or chuck and control the spacing between the substrate and other parts of the chamber (e.g., gas inlets and / or targets). The process gas control program may include code for controlling gas composition and flow rate and optionally for flowing gas into the chamber to stabilize the pressure in the chamber before deposition. The filter monitoring program includes code for comparing the measured difference with a predetermined value and / or code for switching paths. The pressure control program may include code for controlling the pressure in the chamber by adjusting, for example, a throttle valve in the exhaust system of the chamber. The pressure control program may also include code for controlling the pressure in the vacuum line by adjusting a valve (e.g., a throttle valve) 132 along the vacuum line. The heating element control program may include code for controlling the current to a heating unit used to heat components in the precursor delivery system, substrate, adsorption structure, and / or other parts of the system. Alternatively, the heating element control program may control the delivery of a heat transfer gas such as helium to the wafer chuck. For example, valve position control code may include code for controlling access to a process module or substrate handling system by controlling an isolation valve that provides access to the process module or cluster tool. For example, lift mechanism control code may include code for activating an actuator drive to cause the actuator to move a lift pin. For example, robot position code may include code for manipulating the position of (one or more) robots (including manipulating the robot to move along a lateral, vertical, or radial axis). For example, end effector position code may include code for manipulating the position of an end effector (including manipulating the robot to extend, retract, or move along a lateral, vertical, or radial axis).

[0091] Examples of sensors that can be monitored during deposition include, but are not limited to, mass flow control modules, pressure sensors (e.g., pressure gauge 910, pressure sensor 131), and thermocouples (e.g., temperature sensor 914) located in the delivery system, pedestal, or chuck. Appropriately programmed feedback and control algorithms can be used with data from these sensors to maintain desired processing conditions. The foregoing describes implementation of embodiments of the present invention in single-chamber or multi-chamber semiconductor processing tools.

[0092] Various embodiments described herein allow replacement of consumables in a fast and efficient manner without having to open the substrate processing system to atmospheric conditions. Thus, the time to replace consumables and any risk of contaminating the chamber during replacement of consumables are greatly reduced, thereby allowing the substrate processing system to be brought online more quickly. In addition, the risk of accidental damage to the processing module, consumables, and other hardware components in the processing module is greatly reduced.

[0093] The foregoing description of the embodiments has been provided for the purpose of illustration and description. It is not intended to be exhaustive or to limit the present disclosure. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but are interchangeable where applicable and can be used in selected embodiments, even if not specifically shown or described. The same may also be varied in a variety of ways. Such variations should not be considered as departing from the present disclosure, and all such modifications are intended to be included within the scope of the present disclosure.

[0094] Although the foregoing embodiments have been described in some detail for the purpose of clear understanding, it is apparent that certain changes and modifications may be implemented within the scope of the appended claims. Therefore, the present embodiments are considered to be illustrative rather than restrictive, and the embodiments are not limited to the details given herein, but may be modified within their scope and equivalents of the claims.

Claims

1. An adsorption structure integrated into part of a chamber for processing a substrate, the adsorption structure comprising: an interior portion having one or more heating elements; a middle portion having a coolant delivery network for receiving and circulating coolant from a coolant source, and a plurality of vacuum conduits configured to be connected to a vacuum line, wherein the middle portion is disposed adjacent to the inner portion; a lattice structure having an inner layer defined adjacent to the middle portion, and an outer layer defined adjacent to the inner layer and configured to face the interior region of the chamber, wherein the inner layer and the outer layer include a network of openings, and wherein the plurality of vacuum conduits are configured to connect to the lattice structure through the inner layer, The vacuum line and the plurality of vacuum conduits are configured for use during processing to create a low pressure region in the lattice structure relative to a pressure in the chamber to adsorb byproducts released in the chamber during processing of the substrate.

2. The adsorption structure according to claim 1, wherein the vacuum line is connected to a pump.

3. The adsorption structure of claim 1, wherein the coolant delivery network comprises a coolant inlet for receiving the coolant from the coolant source, a coolant outlet, and one or more channels defined between the coolant inlet and the coolant outlet to allow the coolant to flow.

4. The adsorption structure of claim 1, wherein the coolant delivery network is configured to maintain the lattice structure at a first temperature during processing. 5 . The adsorption structure of claim 1 , wherein the adsorption structure is configured to be integrated into a portion of a wall of the chamber, the portion being aligned with a gap defined between upper and lower electrodes disposed in the chamber.

6. The adsorption structure according to claim 1, wherein: The adsorption structure is configured to be integrated into a portion of a plasma confinement structure defined in the chamber, the portion of the plasma confinement structure being aligned with a gap defined between upper and lower electrodes disposed in the chamber.

7. The adsorption structure of claim 1, wherein the adsorption structure is integrated into a portion of a liner defined in the chamber, the portion of the liner being aligned with a gap defined between upper and lower electrodes disposed in the chamber.

8. The adsorption structure of claim 1, wherein a size of the openings in the inner layer is different from a size of the openings in the outer layer.

9. The adsorption structure according to claim 8, wherein the size of the openings in the open network gradually increases from the inner layer to the outer layer. 10 . The adsorption structure according to claim 1 , wherein a size of the opening is based on a size of a gap defined between an upper electrode and a lower electrode disposed in the chamber.

11. The adsorption structure of claim 1, wherein a size of the opening is based on at least one of: a type of reactive gas to be used in the chamber and a type of byproducts expected to be present in the chamber.

12. The adsorption structure of claim 1 , wherein the plurality of vacuum conduits are configured to be connected to a gas source to apply high-pressure gas from the gas source to the inner layer of the lattice structure to facilitate the release of the by-products, and to receive the high-pressure gas to remove the by-products from the chamber during a desorption operation.

13. The adsorption structure of claim 1, wherein the vacuum line further comprises a pressure sensor disposed between the lattice structure and a pump, the pressure sensor being used to monitor the pressure of the byproduct and any reaction gas flowing out of the chamber via the vacuum line.

14. The adsorption structure of claim 1, wherein the adsorption structure is a single continuous piece configured to fit within the portion of the chamber, the portion of the chamber comprising conduits to carry one or more inputs and outputs of the adsorption structure.

15. An adsorption structure according to claim 1, wherein the adsorption structure is a segmented piece covering a sub-portion of the portion of the chamber, the portion of the chamber includes a plurality of segmented pieces distributed along the circumference of the portion of the chamber, and the portion of the chamber includes a conduit to convey the input and output of the plurality of segmented pieces of the adsorption structure.

16. The adsorption structure of claim 15, wherein each segmented member of the plurality of segmented members is separated from an adjacent segmented member by a separation angle.

17. The adsorption structure of claim 16, wherein the separation angle is between about 5° and about 10°.

18. The adsorption structure of claim 15, wherein the input and output of the plurality of segmented members are conveyed through a single conduit defined in the back side of the portion of the chamber and through a channel defined in a wall of the chamber or through a lower electrode defined in the chamber.

19. The adsorption structure of claim 1, wherein the one or more heating elements in the inner portion are used during a desorption step and are configured to heat the adsorption structure to a second temperature to release the byproducts adsorbed on the lattice structure.

20. A method of removing byproducts using an adsorption structure integrated into a portion of a chamber for processing a substrate, the method comprising: cooling the adsorption structure to a first temperature by circulating a coolant from a coolant source through one or more channels of a coolant delivery network defined within a middle portion of the adsorption structure; using a plurality of vacuum conduits defined in the middle portion to create a low pressure region in a lattice structure defined adjacent to the middle portion, the plurality of vacuum conduits being coupled to a vacuum line, wherein an outer layer of the lattice structure is exposed to an interior region of the chamber, the low pressure region causing the byproducts present in the chamber to be adsorbed in a plurality of openings of the lattice structure; heating the adsorption structure to a second temperature using one or more heating elements defined in an inner portion of the adsorption structure to release the byproducts that have been adsorbed in the plurality of openings of the lattice structure, wherein the intermediate portion is disposed between the inner portion and the lattice structure; as well as The byproducts released from the lattice structure are removed through the plurality of vacuum conduits coupled to the vacuum line.

21. The method of claim 20, wherein the vacuum line is coupled to a pump.

22. The method according to claim 21, further comprising: monitoring a pressure of the byproduct flowing through the vacuum line; and When the pressure of the by-products is lower than a predetermined threshold point, the heating of the adsorption structure is initiated to remove the by-products adsorbed in the plurality of openings.

23. The method of claim 20, wherein the first temperature is defined to be sufficient to condense the byproducts present in the chamber.

24. The method of claim 20, wherein said cooling and using said plurality of vacuum conduits to create said low pressure region are performed during processing of said substrate, and wherein said heating and said removing of said byproducts are performed using waferless auto clean (WAC) when no substrate is present in said chamber.

25. The method of claim 20, further comprising: applying a gas to the inner layer of the lattice structure through the vacuum line and the plurality of vacuum conduits, the gas being applied at a defined pressure from a gas source coupled to the vacuum line to generate a force sufficient to release the byproducts adsorbed on the lattice structure; and The byproducts released from the lattice structure are removed through a main vacuum line defined in the chamber.

26. The method of claim 25, wherein the main vacuum line is different than the vacuum lines coupled to the plurality of vacuum conduits.

27. The method of claim 25, wherein the gas is nitrogen.

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