Silicon wafer processing method and silicon wafer

Abstract

The embodiment of the invention discloses a silicon wafer processing method. The silicon wafer processing method comprises the following steps: carrying out coating processing on a silicon wafer subjected to first chamfering processing and grinding processing; carrying out double-sided polishing processing on the silicon wafer after film coating processing; and carrying out second-time chamfering processing on the silicon wafer after double-sided polishing processing. The embodiment of the invention provides a silicon wafer processing method. According to the silicon wafer processing method, the problem of edge collapse of the silicon wafer is solved through two aspects: on one hand, the silicon wafer processing method comprises the step of carrying out film coating processing on the silicon wafer, so that a layer of oxidation film can be deposited on the surface and the edge of the silicon wafer, and the oxidation film can play a role in protecting the silicon wafer, especially the edge part of the silicon wafer; and on the other hand, according to the silicon wafer processing method, the silicon wafer is subjected to double-sided polishing processing and then is subjected to chamfering processing for the second time, so that the edge collapse part of the silicon wafer caused in the double-sided polishing processing process of the previous procedure can be removed through the chamfering process, and the problem of edge collapse of the silicon wafer is solved.

Description

technical field

[0001] The invention relates to the technical field of semiconductor production, in particular to a silicon wafer processing method and a silicon wafer. Background technique

[0002] Silicon wafer is a material for semiconductor components. Generally, after polysilicon is remelted, crystallized, sliced, chamfered, ground, polished, cleaned and other processes, chip-level silicon wafers with smooth and flat surfaces and neat edges can be obtained. As the diameter of silicon wafers becomes larger and the feature size of integrated circuits becomes smaller and smaller, higher requirements are placed on the wafer surface flatness, surface cleanliness and damage. In semiconductor process technology, surface planarization is an important technology for processing high-density lithography, because there is no undulating flat surface to avoid scattering during exposure.

[0003] However, during the processing of silicon wafers, the peripheral edge of the ground and ...

Examples

Embodiment Construction

[0015] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

[0016] In the conventional silicon wafer processing process, the wire cutting process is used to cut the silicon rod into a silicon wafer of a certain thickness, specifically, the wire cutting process is used to cut the silicon rod into a silicon wafer of a certain thickness. On the guide wheel, the guide wheel is used to drive the movement of the cutting line. At the same time of cutting, the mortar is sprayed to the cutting line, and the cutting line is pressed against the silicon rod with the mortar, and performs a one-way or reciprocating cutting motion relative to the silicon rod. This completes an abrasive cut, cutting the silicon rod into slices. However, the surface roughness of the silicon wafer obtained by wire cutting is relatively large, and problems such ...

technical field

[0001] The invention relates to the technical field of semiconductor production, in particular to a silicon wafer processing method and a silicon wafer. Background technique

[0002] Silicon wafer is a material for semiconductor components. Generally, after polysilicon is remelted, crystallized, sliced, chamfered, ground, polished, cleaned and other processes, chip-level silicon wafers with smooth and flat surfaces and neat edges can be obtained. As the diameter of silicon wafers becomes larger and the feature size of integrated circuits becomes smaller and smaller, higher requirements are placed on the wafer surface flatness, surface cleanliness and damage. In semiconductor process technology, surface planarization is an important technology for processing high-density lithography, because there is no undulating flat surface to avoid scattering during exposure.

[0003] However, during the processing of silicon wafers, the peripheral edge of the ground and ...

Examples

Embodiment Construction

[0015] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

[0016] In the conventional silicon wafer processing process, the wire cutting process is used to cut the silicon rod into a silicon wafer of a certain thickness, specifically, the wire cutting process is used to cut the silicon rod into a silicon wafer of a certain thickness. On the guide wheel, the guide wheel is used to drive the movement of the cutting line. At the same time of cutting, the mortar is sprayed to the cutting line, and the cutting line is pressed against the silicon rod with the mortar, and performs a one-way or reciprocating cutting motion relative to the silicon rod. This completes an abrasive cut, cutting the silicon rod into slices. However, the surface roughness of the silicon wafer obtained by wire cutting is relatively large, and problems such ...

Images