A semiconductor discharge processing device and a processing method thereof

Abstract

The present invention discloses a semiconductor discharge processing device and a processing method thereof, the device comprises a charge-discharge conversion mechanism and a discharge processing device and a charging processing device respectively connected to the charge-discharge conversion mechanism; the discharge processing device is provided with a plurality of discharge electrodes and a discharge connection area electrically connected to the discharge electrodes, the discharge electrodes are used to correspond to the first electrodes respectively provided on each chip of the wafer to be tested; the charging processing device is provided with a charging electrode and a charging connection area; the charge-discharge conversion mechanism is electrically connected to the discharge connection area and the charging connection area respectively; by connecting the discharge electrode to the first electrode, connecting the charging electrode to the second electrode, and adjusting the charge-discharge conversion mechanism to the discharge mode, the electrostatic discharge processing is performed on the wafer to be tested through the discharge processing device. The present invention can solve the technical problems in the prior art that a large number of light-emitting diode chips cannot be processed, the efficiency is low and the cost is high.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor discharge processing device and a processing method thereof. Background Art

[0002] With the continuous development of semiconductor technology, in the manufacturing process of LED chips, various manufacturing tools and processes are used to manufacture LED chips, which will generate static charges in the LED chips during manufacturing. When the LED chips with static charges come into contact with other electronic devices, there will be charge flow, which will generate destructive voltage, current and electromagnetic field, which will cause the electronic equipment and LED chips to malfunction or fail in severe cases. Therefore, each LED chip needs to be electrostatically discharged by a semiconductor discharge treatment device to achieve static discharge.

[0003] There are two common semiconductor discharge processing devices at present. One is to use an electrostatic discharge tester to connect the specific pins of the light-emitting diode chip through a probe or lead to discharge static electricity. The other is to use an electrostatic discharge gun to discharge static electricity at a specific interval away from the specific pins of the light-emitting diode chip. However, both of these semiconductor discharge processing devices need to test the light-emitting diode chips one by one. Each light-emitting diode wafer has tens of thousands or hundreds of thousands of chips. Testing one by one will consume a lot of time and be inefficient. In order to improve the efficiency of the test, a large number of semiconductor discharge processing devices are required to perform electrostatic discharge processing, and a large amount of manpower and material resources are also required, which is too costly.

[0004] Therefore, existing semiconductor discharge processing devices generally have technical problems such as being unable to process a large number of light-emitting diode chips, being low in efficiency and having high costs. Summary of the invention

[0005] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a semiconductor discharge processing device and a processing method thereof, aiming to solve the technical problems in the prior art that a large number of light emitting diode chips cannot be processed, and the efficiency is low and the cost is high.

[0006] A first aspect of the present invention is to provide a semiconductor discharge processing device, which is applied to a vertical light emitting diode chip. The semiconductor discharge processing device comprises:

[0007] A charge-discharge conversion mechanism and a discharge processing device and a charge processing device respectively connected to the charge-discharge conversion mechanism;

[0008] The discharge processing device is used to perform electrostatic discharge processing on the wafer to be tested, and is provided with a plurality of discharge electrodes and a discharge connection area electrically connected to the discharge electrodes. The wafer to be tested includes a first electrode group and a second electrode respectively arranged on both sides. The first electrode group includes a plurality of first electrodes respectively arranged on each chip of the wafer to be tested, and the discharge electrodes are used to correspond to the first electrodes one by one;

[0009] The charging processing device is provided with a charging electrode and a charging connection area electrically connected to the charging electrode;

[0010] The charge-discharge conversion mechanism is electrically connected to the discharge connection area and the charge connection area respectively;

[0011] The discharge processing device is charged by connecting the discharge electrode to the charge electrode and adjusting the charge-discharge conversion mechanism to a charge mode;

[0012] The discharge electrode is connected to the first electrode, the charge electrode is connected to the second electrode, and the charge-discharge conversion mechanism is adjusted to a discharge mode, so that the wafer to be tested is subjected to electrostatic discharge treatment through the discharge treatment device.

[0013] Compared with the prior art, the beneficial effects of the present invention are as follows: the semiconductor discharge processing device provided by the present invention forms a loop through the connection between the charge-discharge conversion mechanism and the charging processing device and the discharge processing device, and the charge-discharge conversion mechanism is set to the charging mode to charge the discharge processing device, and then the first electrode of the wafer to be tested is connected to the discharge processing device, and the second electrode is connected to the charging processing device to form a loop, and the wafer to be tested is subjected to electrostatic discharge treatment by setting the charge-discharge conversion mechanism to the discharge mode, wherein the discharge electrode of the discharge processing device is connected one by one with the first electrode respectively arranged on each chip of the wafer to be tested, and electrostatic discharge treatment of a large number of chips can be realized, which greatly improves the efficiency of electrostatic discharge treatment and reduces the cost. At the same time, each chip has an independent discharge circuit, and the electrostatic discharge treatment is stable and reliable, avoiding the low efficiency and increased cost of the traditional electrostatic discharge treatment of each chip, thereby solving the common technical problems of being unable to realize the processing of a large number of light-emitting diode chips, low efficiency and high cost.

[0014] According to one aspect of the above technical solution, a dielectric layer is provided between the discharge electrode and the discharge connection region, so that the discharge electrode and the discharge connection region form a capacitor to store charge.

[0015] According to one aspect of the above technical solution, the dielectric constant of the dielectric layer is 10-10000C 2 / (N·M 2 ), thickness is 0.1um-10mm.

[0016] According to one aspect of the above technical solution, the charging electrode is electrically connected to the charging connection area through a lead.

[0017] According to one aspect of the above technical solution, an insulating protective layer is provided at the edge of the charging connection area at one end of the charging electrode, and the insulating protective layer is provided on the charging connection area.

[0018] According to one aspect of the above technical solution, the charging electrode and the charging connection area are respectively arranged on two opposite sides of the charging processing device.

[0019] According to one aspect of the above technical solution, the charging electrode is provided with a charging substrate on a side close to the charging connection area.

[0020] A second aspect of the present invention is to provide a method for processing a semiconductor discharge processing device, which is performed using any of the semiconductor discharge processing devices described above, and the method comprises:

[0021] The charge-discharge conversion mechanism is electrically connected to the discharge connection area of ​​the discharge processing device and the charge connection area of ​​the charge processing device respectively;

[0022] Connecting the discharge electrode of the discharge processing device to the charge electrode of the charge processing device, and charging the discharge processing device by adjusting the charge-discharge conversion mechanism to a charge mode;

[0023] The discharge electrode of the charged discharge processing device is connected one by one with the first electrodes respectively arranged on each chip of the wafer to be tested, and the charging electrode of the charging processing device is connected with the second electrode of the wafer to be tested. By adjusting the charge-discharge conversion mechanism to the discharge mode, the electrostatic discharge treatment of the wafer to be tested is performed through the discharge processing device.

[0024] According to one aspect of the above technical solution, the step of connecting the discharge electrode of the discharge processing device to the charge electrode of the charge processing device and charging the discharge processing device by adjusting the charge-discharge conversion mechanism to a charge mode specifically includes:

[0025] connecting the discharge electrode of the discharge processing device to the charge electrode of the charge processing device to form a charge loop;

[0026] By setting the charge-discharge conversion mechanism to a preset voltage value, the charge-discharge conversion mechanism is adjusted to a charging mode;

[0027] Based on a preset voltage value, the discharge processing device is charged through a charging circuit so that the discharge processing device stores electric charge.

[0028] According to one aspect of the above technical solution, the discharge electrode of the charged discharge processing device is connected one by one with the first electrodes of the first electrodes respectively provided on each chip of the wafer to be tested, and the charging electrode of the charging processing device is connected with the second electrode of the wafer to be tested, and the step of performing electrostatic discharge treatment on the wafer to be tested by adjusting the charge-discharge conversion mechanism to the discharge mode through the discharge processing device specifically includes:

[0029] Connecting the discharge electrode of the charged discharge processing device to the first electrodes of each chip of the wafer to be tested one by one, and connecting the charge electrode of the charge processing device to the second electrode of the wafer to be tested to form a discharge circuit;

[0030] The charge-discharge conversion mechanism is adjusted to a discharge mode by setting a preset resistance value;

[0031] Based on the preset resistance value, the charge stored in the discharge processing device passes through the discharge circuit to perform electrostatic discharge processing on the wafer to be tested. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0033] Figure 1 It is a schematic structural diagram of a discharge treatment device in a first embodiment of the present invention;

[0034] Figure 2 It is a structural schematic diagram of a charging processing device in a first embodiment of the present invention;

[0035] Figure 3 It is a schematic structural diagram of a wafer to be tested in the first embodiment of the present invention;

[0036] Figure 4 It is a schematic diagram of the structure of the connection between the discharge processing device and the charge processing device in the first embodiment of the present invention;

[0037] Figure 5 It is a schematic structural diagram of the connection between the discharge processing device, the wafer to be tested and the charge processing device in the first embodiment of the present invention;

[0038] Figure 6 It is a circuit diagram of the charging mode of the semiconductor discharge processing device in the first embodiment of the present invention;

[0039] Figure 7 A circuit diagram of a discharge mode of a semiconductor discharge processing device according to a first embodiment of the present invention;

[0040] Figure 8It is a schematic structural diagram of a charging processing device in a second embodiment of the present invention;

[0041] Fig. 9 is a flow chart of a processing method of a semiconductor discharge processing device in a third embodiment of the present invention;

[0042] Component symbol description:

[0043] Discharge processing device 10, discharge substrate 11, discharge connection area 12, dielectric layer 13, discharge electrode 14, charge processing device 20, charge substrate 21, charge connection area 22, charge electrode 23, insulating protection layer 24, wafer to be tested 30, chip 31, first electrode 310, second electrode 311, charge-discharge conversion mechanism 40. DETAILED DESCRIPTION

[0044] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings. Several embodiments of the present invention are shown in the accompanying drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0045] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right", "upper", "lower" and similar expressions used herein are for illustrative purposes only and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0046] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be internal communication between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0047] Embodiment 1

[0048] See also Figure 1-Figure 7, shown is a semiconductor discharge processing device provided by the first embodiment of the present invention, which is applied to a vertical light-emitting diode chip. The semiconductor discharge processing device includes a charge-discharge conversion mechanism 40 and a discharge processing device 10 and a charge processing device 20 respectively connected to the charge-discharge conversion mechanism 40, wherein the discharge processing device 10 is used to perform electrostatic discharge processing on the wafer 30 to be tested. The shape of the discharge processing device 10 can be circular, square, elliptical or other arbitrary polygons. The size of the discharge processing device 10 needs to be larger than the size of the wafer 30 to be tested, so as to perform electrostatic discharge processing on each chip 31 on the wafer 30 to be tested. The wafer 30 to be tested includes a first electrode 310 group and a second electrode 311 respectively arranged on both sides. The first electrode 310 group includes a plurality of first electrodes 310 respectively arranged on each chip 31 of the wafer 30 to be tested, and the second electrode 311 is arranged on the side of the chip 31 away from the first electrode 310.

[0049] The discharge processing device 10 is provided with a plurality of discharge electrodes 14 and a discharge connection area 12 electrically connected to the discharge electrodes 14. The material of the discharge electrodes 14 includes but is not limited to Cr, Al, Ni, Ti, Pt, Au and materials composed of the above metals. The discharge electrodes 14 are used to correspond to the first electrodes 310 one by one. When the discharge electrodes 14 are connected to the first electrodes 310, electrostatic discharge processing of the wafer 30 to be tested is realized, so as to achieve electrostatic discharge processing of a large number of chips 31, which greatly improves the efficiency of electrostatic discharge processing, reduces costs, and avoids electrostatic discharge processing of each chip 31, which is inefficient. When the discharge electrode 14 is connected to the charging electrode 23, the discharge processing device 10 is charged, so that the discharge processing device 10 stores charge, and then the electrostatic discharge processing of the wafer 30 to be tested can be performed.

[0050] In addition, the discharge connection area 12 is connected to the charge-discharge conversion mechanism 40 through a wire, so that the charge-discharge conversion mechanism 40 adjusts the charging mode or the discharging mode to achieve electrostatic discharge treatment of the wafer 30 to be tested. The material of the discharge connection area 12 includes but is not limited to Cr, Al, Ni, Ti, Pt, Au and materials composed of the above metals. A dielectric layer 13 is provided between the discharge electrode 14 and the discharge connection area 12, so that a capacitor is formed between the discharge electrode 14 and the discharge connection area 12 to store charge. The stored charge will perform electrostatic discharge treatment on the wafer 30 to be tested. The material of the dielectric layer 13 includes but is not limited to SiO2, Ti3O5, SiN, Al2O3 and a mixed material composed of the above substances. The dielectric constant of the dielectric layer 13 is 10-10000C. 2 / (N·M 2 ), thickness is 0.1um-10mm.

[0051] In addition, the discharge connection area 12 is disposed on the discharge substrate 11. The discharge substrate 11 serves as a supporting substrate of the discharge treatment device 10. The material of the discharge substrate 11 may be Cu, Al, Si, Al2O3, SiO2, GaN, etc., and the thickness thereof is 150um-10mm.

[0052] Specifically, the discharge treatment device 10 can be prepared by the following steps: providing a discharge substrate 11, pre-treating the discharge substrate 11, polishing the discharge substrate 11 using a polishing pad or polishing liquid to make its surface flat, and the total thickness range is between 0.001-2um to facilitate the growth of subsequent film layers.

[0053] Subsequently, the discharge connection region 12, the dielectric layer 13 and the discharge electrode 14 are sequentially grown on the discharge substrate 11. The discharge connection region 12 is grown on the discharge substrate 11 by evaporation or sputtering, and its thickness is 0.05um-1mm. The dielectric layer 13 is grown on the discharge connection region 12 by chemical vapor deposition or atomic layer deposition, and the dielectric constant of the dielectric layer 13 is 10-10000C. 2 / (N·M 2 ), with a thickness of 0.1um-10mm, and the discharge electrode 14 is grown on the dielectric layer 13 by evaporation or sputtering, and has a thickness of 0.05um-5mm.

[0054] In addition, the charging processing device 20 includes a charging electrode 23 and a charging connection area 22 electrically connected to the charging electrode 23. The material of the charging electrode 23 includes, but is not limited to, Cr, Al, Ni, Ti, Pt, Au, and materials composed of the above metals. When the charging electrode 23 is connected to the discharge electrode 14, the discharge processing device 10 is charged. When the charging electrode 23 is connected to the second electrode 311, the electrostatic discharge treatment of the wafer to be tested 30 is achieved. In this example, the charging electrode 23 is electrically connected to the charging connection area 22 through a lead wire. An insulating protective layer 24 is provided at the edge of one end of the charging electrode 23. The insulating protective layer 24 is provided on the charging connection area 22 to reduce the exposed area of ​​the charging connection area 22, reduce the area of ​​the charging connection area 22 damaged by the outside world, prolong the service life, and facilitate intuitive distinction between the charging electrode 23 and the charging connection area 22. The material of the insulating protective layer 24 includes but is not limited to SiO2, Ti3O5, SiN, Al2O3, and the charging connection area 22 is connected to the charge-discharge conversion module through a wire to form a charging circuit or a discharging circuit to achieve electrostatic discharge processing of the wafer 30 to be tested. The charging connection area 22 and the charging electrode 23 are arranged on the charging substrate 21. The charging substrate 21 serves as a supporting substrate of the charging processing device 20, and its material can be Cu, Al, Si, Al2O3, SiO2, GaN and other materials, and its thickness is 150um-10mm.

[0055] Specifically, the charging processing device 20 can be prepared by the following steps: providing a charging substrate 21, pre-treating the charging substrate 21, polishing the charging substrate 21 using a polishing pad or a polishing liquid to make its surface flat, and the total thickness range is between 0.001-2um to facilitate the growth of subsequent film layers.

[0056] Subsequently, a charging connection region 22, a charging electrode 23 and an insulating protective layer 24 are sequentially grown on the charging substrate 21. The charging connection region 22 is grown on the charging substrate 21 by evaporation or sputtering, and its thickness is 0.05um-1mm, the charging electrode 23 is grown on the charging connection region 22 by evaporation or sputtering, and its thickness is 0.05um-5mm, and the insulating protective layer 24 is grown on the charging connection region 22 by chemical vapor deposition or atomic layer deposition, and its thickness is 0.05um-5mm.

[0057] The discharge connection area 12 and the charge connection area 22 are electrically connected to the charge-discharge conversion mechanism 40 through wires, and the charge-discharge conversion mechanism 40 switches the circuit connection direction inside the charge-discharge conversion mechanism 40 through an internal switch to form a conversion between charging and discharging. When the discharge electrode 14 of the discharge processing device 10 is connected to the charging electrode 23 of the charge processing device 20, and the discharge connection area 12 and the charge connection area 22 are electrically connected to the charge-discharge conversion mechanism 40 through wires, a charging circuit will be formed. By adjusting the charge-discharge conversion mechanism 40 to the charging mode, that is, setting a preset voltage value, the discharge processing device 10 is charged, so that the capacitor formed between the discharge electrode 14 and the discharge connection area 12 stores charge.

[0058] When the discharge electrode 14 of the charged discharge processing device 10 is aligned and connected one by one with the first electrode 310 on each chip 31 of the wafer 30 to be tested, and the charging electrode 23 of the charging processing device 20 is connected to the second electrode 311 of the wafer 30 to be tested, and the discharge connection area 12 and the charging connection area 22 are electrically connected to the charge-discharge conversion mechanism 40 through wires, a discharge circuit will be formed. By adjusting the charge-discharge conversion mechanism 40 to the discharge mode, that is, setting a preset resistance value, the charge stored in the discharge processing device 10 passes through the discharge circuit, and electrostatic discharge treatment is performed on the wafer 30 to be tested to release static electricity. The device is simple and efficient, and can realize electrostatic discharge treatment of a large number of chips 31, greatly improving the efficiency of electrostatic discharge treatment, reducing costs, and avoiding the inefficiency of processing one chip 31 at a time. The discharge electrode 14 is aligned and connected one by one with the first electrode 310 on each chip 31, so that each chip 31 has an independent discharge circuit, and the electrostatic discharge treatment is stable and reliable.

[0059] Compared with the prior art, the semiconductor discharge processing device provided in this embodiment has the beneficial effect that: the semiconductor discharge processing device provided by the present invention forms a loop by connecting the charge-discharge conversion mechanism, the charging processing device and the discharge processing device, and by setting the charge-discharge conversion mechanism to the charging mode to charge the discharge processing device, and then the first electrode of the wafer to be tested is connected to the discharge processing device, and the second electrode is connected to the charging processing device to form a loop, and by setting the charge-discharge conversion mechanism to the discharge mode, the wafer to be tested is subjected to electrostatic discharge treatment, wherein the discharge electrode of the discharge processing device corresponds to the position of the first electrode on each chip of the wafer to be tested one by one, and electrostatic discharge treatment of a large number of chips can be achieved, which greatly improves the efficiency of electrostatic discharge treatment and reduces the cost. At the same time, each chip has an independent discharge circuit, and the electrostatic discharge treatment is stable and reliable, avoiding the low efficiency and increased cost of traditional electrostatic discharge treatment of each chip, thereby solving the common technical problems of being unable to achieve large-scale processing of light-emitting diode chips, low efficiency and high cost.

[0060] Embodiment 2

[0061] A second embodiment of the present invention provides a semiconductor discharge processing device. The semiconductor discharge processing device in this embodiment is different from the semiconductor discharge processing device in the first embodiment in that:

[0062] See also Figure 8 The charging electrode 23 and the charging connection area 22 are respectively arranged on opposite sides of the charging processing device 20, and the charging electrode 23 is provided with a charging substrate 21 on the side close to the charging connection area 22. The charging substrate 21 is made of conductive material, and the electrical connection is achieved through the conductive effect of the charging substrate 21. Similarly, the charging processing device 20, the charge-discharge conversion mechanism 40 and the discharge processing device 10 realize the electrostatic discharge treatment of the wafer 30 to be tested.

[0063] Compared with the prior art, the semiconductor discharge processing device provided in this embodiment has the beneficial effect that: the semiconductor discharge processing device provided by the present invention forms a loop by connecting the charge-discharge conversion mechanism, the charging processing device and the discharge processing device, and by setting the charge-discharge conversion mechanism to the charging mode to charge the discharge processing device, and then the first electrode of the wafer to be tested is connected to the discharge processing device, and the second electrode is connected to the charging processing device to form a loop, and by setting the charge-discharge conversion mechanism to the discharge mode, the wafer to be tested is subjected to electrostatic discharge treatment, wherein the discharge electrode of the discharge processing device corresponds to the position of the first electrode on each chip of the wafer to be tested one by one, and electrostatic discharge treatment of a large number of chips can be achieved, which greatly improves the efficiency of electrostatic discharge treatment and reduces the cost. At the same time, each chip has an independent discharge circuit, and the electrostatic discharge treatment is stable and reliable, avoiding the low efficiency and increased cost of traditional electrostatic discharge treatment of each chip, thereby solving the common technical problems of being unable to achieve large-scale processing of light-emitting diode chips, low efficiency and high cost.

[0064] Embodiment 3

[0065] See also Fig. 9 , shown is a semiconductor discharge processing method provided by the third embodiment of the present invention, which is applied to a vertical light emitting diode chip. The processing method includes steps S10-S12:

[0066] Step S10, electrically connecting the charge-discharge conversion mechanism to the discharge connection area of ​​the discharge processing device and the charge connection area of ​​the charge processing device respectively;

[0067] The charge-discharge conversion mechanism is electrically connected to the discharge connection area of ​​the discharge processing device and the charge connection area of ​​the charge processing device through wires to form a circuit loop with the discharge processing device and the charge processing device to realize the charge mode and the discharge mode.

[0068] Step S11, connecting the discharge electrode of the discharge processing device to the charge electrode of the charge processing device, and adjusting the charge-discharge conversion mechanism to a charge mode to charge the discharge processing device;

[0069] Specifically, the discharge electrode of the discharge processing device is connected to the charging electrode of the charging processing device to form a charging circuit; the charging circuit is connected to the charge-discharge conversion mechanism through a charge-discharge conversion mechanism, a wire, a charging connection area, a charging electrode, a discharge electrode, a discharge connection area and a wire connected to the charge-discharge conversion mechanism to form a charging circuit.

[0070] The charge and discharge conversion mechanism is set to a preset voltage value to adjust to the charging mode; wherein the charge and discharge conversion module is adjusted to a DC power supply to provide a preset voltage value to the discharge processing device, which should meet the requirements of standards such as IEC61000-4-2, HBM human body model or MM mechanical model, and can be adjusted according to the conditions required by customers and users. The preset voltage range is 50V to 10000V.

[0071] Based on the preset voltage value, the discharge processing device is charged through the charging circuit so that the discharge processing device stores charge. The discharge processing device stores charge through the capacitor formed by the discharge electrode and the discharge connection area to form a voltage signal with the same preset voltage value provided by the charge-discharge conversion mechanism.

[0072] Step S12, aligning and connecting the discharge electrode of the discharge processing device that has completed charging with the first electrodes respectively provided on each chip of the wafer to be tested, and connecting the charging electrode of the charging processing device with the second electrode of the wafer to be tested, and adjusting the charge-discharge conversion mechanism to the discharge mode to perform electrostatic discharge treatment on the wafer to be tested through the discharge processing device.

[0073] Specifically, the discharge electrode of the charged discharge processing device is aligned and connected one by one with the first electrodes respectively arranged on each chip of the wafer to be tested, and the charging electrode of the charging processing device is connected to the second electrode of the wafer to be tested to form a discharge circuit; the discharge circuit is connected to the charge-discharge conversion mechanism through a charge-discharge conversion mechanism, a wire, a charging connection area, a charging electrode, a second electrode, a first electrode, a discharge electrode, a discharge connection area and a wire connected to the charge-discharge conversion mechanism to form a discharge circuit.

[0074] The charge-discharge conversion mechanism is adjusted to the discharge mode by setting a preset resistance value; wherein the preset resistance can be set according to the test requirements and should meet the requirements of standards such as IEC61000-4-2, HBM human body model or MM mechanical model.

[0075] Based on the preset resistance value, the charge stored in the discharge processing device passes through the discharge circuit to perform electrostatic discharge processing on the wafer to be tested. Among them, this processing method can realize the whole-wafer processing of the wafer, realize the electrostatic discharge processing of a large number of chips, and each chip has an independent discharge circuit. The electrostatic discharge processing is stable and reliable, and there is no need to test each chip one by one, which greatly improves the efficiency of electrostatic discharge testing and reduces the cost of electrostatic discharge testing.

[0076] Compared with the prior art, the semiconductor discharge processing method provided in this embodiment has the beneficial effect that: the semiconductor discharge processing method provided by the present invention is electrically connected to the discharge connection area of ​​the discharge processing device and the charging connection area of ​​the charging processing device through the charge-discharge conversion mechanism; the discharge electrode of the discharge processing device of the discharge processing plate is connected to the charging electrode of the charging processing device of the charging processing plate to charge the discharge processing device, the discharge electrode of the charged discharge processing device is aligned and connected one by one with the first electrodes respectively arranged on each chip of the wafer to be tested, and the charging electrode of the charging processing device is connected to the second electrode of the wafer to be tested, so that the wafer to be tested is subjected to electrostatic discharge processing through the discharge processing device, and electrostatic discharge processing of a large number of chips can be realized, which greatly improves the efficiency of electrostatic discharge processing and reduces the cost. At the same time, each chip has an independent discharge circuit, and the electrostatic discharge processing is stable and reliable, avoiding the low efficiency and increased cost of traditional electrostatic discharge processing of each chip, thereby solving the common technical problems of being unable to realize the processing of a large number of light-emitting diode chips, low efficiency and high cost.

[0077] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0078] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for those of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A semiconductor discharge processing device, applied to a vertical light emitting diode chip, It is characterized in that The semiconductor discharge processing device comprises: A charge-discharge conversion mechanism and a discharge processing device and a charge processing device respectively connected to the charge-discharge conversion mechanism; The discharge processing device is used to perform electrostatic discharge processing on the wafer to be tested, and is provided with a plurality of discharge electrodes and a discharge connection area electrically connected to the discharge electrodes. The wafer to be tested includes a first electrode group and a second electrode respectively arranged on both sides. The first electrode group includes a plurality of first electrodes respectively arranged on each chip of the wafer to be tested, and the discharge electrodes are used to correspond to the first electrodes one by one; The charging processing device is provided with a charging electrode and a charging connection area electrically connected to the charging electrode; The charge-discharge conversion mechanism is electrically connected to the discharge connection area and the charge connection area respectively; The discharge processing device is charged by connecting the discharge electrode to the charge electrode and adjusting the charge-discharge conversion mechanism to a charge mode; The discharge electrode is connected to the first electrode, the charge electrode is connected to the second electrode, and the charge-discharge conversion mechanism is adjusted to a discharge mode, so that the wafer to be tested is subjected to electrostatic discharge treatment through the discharge treatment device.

2. The semiconductor discharge processing device according to claim 1, It is characterized in that A dielectric layer is disposed between the discharge electrode and the discharge connection region, so that the discharge electrode and the discharge connection region form a capacitor to store charges.

3. The semiconductor discharge processing device according to claim 2, It is characterized in that The dielectric constant of the dielectric layer is 10-10000C 2 / (N·M 2 ), thickness is 0.1um-10mm.

4. The semiconductor discharge processing device according to claim 1, It is characterized in that The charging electrode is electrically connected to the charging connection area through a lead wire.

5. The semiconductor discharge processing device according to claim 4, It is characterized in that An insulating protective layer is provided at the edge of the charging connection area at one end of the charging electrode, and the insulating protective layer is provided on the charging connection area.

6. The semiconductor discharge processing device according to claim 1, It is characterized in that The charging electrode and the charging connection area are respectively arranged on two opposite sides of the charging processing device.

7. The semiconductor discharge processing device according to claim 6, It is characterized in that The charging electrode is provided with a charging substrate at one side close to the charging connection area.

8. A semiconductor discharge processing method, It is characterized in that The semiconductor discharge processing device according to any one of claims 1 to 7 is used for completion, and the processing method comprises: The charge-discharge conversion mechanism is electrically connected to the discharge connection area of ​​the discharge processing device and the charge connection area of ​​the charge processing device respectively; Connecting the discharge electrode of the discharge processing device to the charge electrode of the charge processing device, and charging the discharge processing device by adjusting the charge-discharge conversion mechanism to a charge mode; The discharge electrode of the charged discharge processing device is connected one by one with the first electrodes respectively arranged on each chip of the wafer to be tested, and the charging electrode of the charging processing device is connected with the second electrode of the wafer to be tested. By adjusting the charge-discharge conversion mechanism to the discharge mode, the electrostatic discharge treatment of the wafer to be tested is performed through the discharge processing device.

9. The semiconductor discharge processing method according to claim 8, It is characterized in that The step of connecting the discharge electrode of the discharge processing device to the charge electrode of the charge processing device and charging the discharge processing device by adjusting the charge-discharge conversion mechanism to a charge mode specifically includes: connecting the discharge electrode of the discharge processing device to the charge electrode of the charge processing device to form a charge loop; By setting the charge-discharge conversion mechanism to a preset voltage value, the charge-discharge conversion mechanism is adjusted to a charging mode; Based on a preset voltage value, the discharge processing device is charged through a charging circuit so that the discharge processing device stores electric charge.

10. The processing method of the semiconductor discharge processing device according to claim 8, It is characterized in that The steps of aligning and connecting the discharge electrode of the charged discharge processing device with the first electrodes of the first electrodes respectively provided on the respective chips of the wafer to be tested, and connecting the charge electrode of the charge processing device with the second electrode of the wafer to be tested, and adjusting the charge-discharge conversion mechanism to the discharge mode so as to perform electrostatic discharge processing on the wafer to be tested through the discharge processing device specifically include: Connecting the discharge electrode of the charged discharge processing device to the first electrodes of the first electrodes respectively provided on the chips of the wafer to be tested one by one, and connecting the charge electrode of the charge processing device to the second electrode of the wafer to be tested to form a discharge circuit; The charge-discharge conversion mechanism is adjusted to a discharge mode by setting a preset resistance value; Based on the preset resistance value, the charge stored in the discharge processing device passes through the discharge circuit to perform electrostatic discharge processing on the wafer to be tested.

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