Semiconductor process equipment and its carrier

Abstract

The embodiment of the present application provides a semiconductor process equipment and its supporting device. The supporting device includes: a tray, a base and a ejector assembly; a supporting structure is provided on the tray, and the supporting structure passes through the tray in the vertical direction, and is used to support multiple wafers in the horizontal direction; a supporting structure is provided on the base, and the supporting structure is provided corresponding to the supporting structure, and is used to pass through the supporting structure to support multiple wafers when the tray is stacked on the base, and can make the multiple wafers tilted toward the center of the base at a preset angle; the ejector assembly is provided at the bottom of the base, and is used to drive the tray to rise and fall relative to the base, so that the tray can be selectively located above the base, or stacked on the base. The embodiment of the present application achieves a higher uniformity of film thickness of multiple wafers, and better uniformity of film thickness between multiple wafers, thereby greatly improving product yield.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and more specifically, to a semiconductor process equipment and a carrier device thereof. Background Art

[0002] At present, the technology of using semiconductor process equipment to prepare tin-doped indium oxide (ITO) thin film through physical vapor deposition (PVD) process is widely used in LED epitaxial plants. ITO thin film is beneficial to improving the optoelectronic performance (conductivity and light transmittance) of the chip.

[0003] The sizes of sapphire wafers in existing LED epitaxial wafers are mainly 2 inches, 4 inches and 6 inches. The process flow for depositing ITO thin films is as follows: first, the wafer is placed on a tray, and then the tray is transferred by a robot to the base of the process chamber, and finally the ITO thin film deposition is started. By placing multiple wafers on the tray, the equipment production capacity can be greatly improved. However, when the target size is fixed, since multiple wafers are arranged on the tray, the film thickness uniformity of each wafer on the same tray is not consistent. For example, the film thickness uniformity of the wafers near the edge of the tray is poor (film thickness uniformity is 4%), while the film thickness uniformity of the wafers located in the center of the tray is better (film thickness uniformity <2%). Therefore, the film thickness uniformity of the wafers is inconsistent, and the poor film thickness uniformity will also result in a low product yield. Summary of the Invention

[0004] In view of the shortcomings of the existing methods, this application proposes a semiconductor process equipment and a supporting device thereof to solve the technical problem of poor wafer film thickness uniformity in the existing technology.

[0005] In the first aspect, an embodiment of the present application provides a carrying device, which is arranged in a process chamber of a semiconductor process equipment and is used to carry wafers, including: a tray, a base and a ejector pin assembly; a carrying structure is provided on the tray, and the carrying structure passes through the tray in a vertical direction, and is used to carry multiple wafers in a horizontal direction; a supporting structure is provided on the base, and the supporting structure is arranged corresponding to the carrying structure, and is used to pass through the carrying structure to carry multiple wafers when the tray is stacked on the base, and can make the multiple wafers tilt toward the center of the base at a preset angle; the ejector pin assembly is provided at the bottom of the base, and is used to drive the tray to rise and fall relative to the base, so that the tray can be selectively located above the base, or stacked on the base.

[0006] In one embodiment of the present application, the supporting structure includes a central through hole and edge through holes. The central through hole is located at the center of the tray, and a plurality of edge through holes are evenly and spaced apart along the circumference of the central through hole.

[0007] In one embodiment of the present application, the supporting structure includes a center boss and an edge boss. The center boss is arranged corresponding to the center through hole and is used to pass through the center through hole to support the wafer; multiple edge bosses are arranged one-to-one corresponding to multiple edge through holes and are used to pass through the edge through holes to support the wafer.

[0008] In one embodiment of the present application, the top surface of the center boss is parallel to the base surface, and the top surfaces of the multiple edge bosses are all inclined along the radial direction of the center boss and toward the position where the center boss is located, and the top surface of the edge boss and the base surface form the preset angle.

[0009] In one embodiment of the present application, a plurality of limiting structures are protruding from the tray, and the limiting structures are located between the central through hole and any two adjacent edge through holes. The outer periphery of the limiting structure has three limiting arc surfaces, and the limiting arc surfaces are used to stop the edge of the wafer to limit the position of the wafer in the central through hole and the edge through hole.

[0010] In one embodiment of the present application, a receiving groove is provided on the tray, the central through hole, the edge through hole and the limiting structure are all located on the bottom wall of the receiving groove, the side wall of the receiving groove is arranged around the periphery of the multiple edge through holes, the bottom wall of the receiving groove is used to support the wafer, and the side wall of the limiting structure cooperates with the limiting arc surface to limit the wafer.

[0011] In one embodiment of the present application, the carrying device also includes a plurality of positioning structures arranged between the tray and the base, and the plurality of positioning structures and the plurality of limiting structures are arranged in a one-to-one correspondence, and are used to position the tray and the wafer during the lifting process of the tray.

[0012] In one embodiment of the present application, each of the positioning structures includes a positioning hole and a positioning column, the positioning hole passes through the center position of the limiting structure and is arranged tangent to the limiting arc surface; multiple positioning columns of the positioning structure are arranged around the center boss and are used to pass through the positioning hole to position the tray and the wafer.

[0013] In one embodiment of the present application, the center boss, the edge boss and the positioning column have a first height relative to the top surface of the base in the vertical direction, and the tray has a second height along the vertical direction, and the first height is greater than the second height.

[0014] In one embodiment of the present application, the central boss and the edge boss are integrally formed with the base or are detachable.

[0015] In one embodiment of the present application, the preset angle is 2 degrees to 4 degrees.

[0016] In the second aspect, an embodiment of the present application provides an upper electrode mechanism, which is arranged on the top of a semiconductor process equipment. The upper electrode mechanism includes a target material, and the bottom edge of the target material has a bevel structure extending circumferentially. The bevel structure is inclined from top to bottom and from the center to the edge, and a preset angle is formed between the bevel structure and the bottom surface.

[0017] In one embodiment of the present application, the preset angle is 165 degrees to 170 degrees.

[0018] In the third aspect, an embodiment of the present application provides a semiconductor process equipment, comprising: a process chamber and a carrier device as provided in the first aspect, and / or an upper electrode mechanism as provided in the second aspect; wherein, the upper electrode mechanism is arranged at the top of the process chamber, the carrier device is arranged in the process chamber, and the carrier device is coaxially arranged with the target material of the upper electrode mechanism.

[0019] The beneficial technical effects brought about by the technical solutions provided by the embodiments of the present application are:

[0020] In the embodiment of the present application, a supporting structure is provided on the tray, and a supporting structure is provided on the base, and the supporting structure can pass through the supporting structure to support the wafers, so that multiple wafers can be tilted toward the center of the base at a preset angle, so that the bombarded target material can be deposited more on the multiple wafers located at the edge of the tray, thereby making the film thickness uniformity of the multiple wafers located at the edge of the tray higher, and making the film thickness uniformity between all wafers on the tray better, thereby greatly improving the product yield. In addition, the use of a pin assembly to drive the tray to be selectively stacked on the base can also enable the pin assembly to drive the tray to separate from the base after the wafer has completed the process, so that the multiple wafers can be restored to a horizontal state, thereby facilitating the transportation of the wafers.

[0021] Additional aspects and advantages of the present application will be given in part in the following description, which will become apparent from the following description, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0023] Figure 1 A schematic cross-sectional view of a semiconductor process equipment provided in an embodiment of the present application;

[0024] Figure 2A A schematic diagram of a top view of a tray provided in an embodiment of the present application;

[0025] Figure 2B A schematic diagram of the three-dimensional structure of a tray provided in an embodiment of the present application;

[0026] Figure 3A A schematic diagram of a top view of a base provided in an embodiment of the present application;

[0027] Figure 3B A schematic diagram of a three-dimensional structure of a base provided in an embodiment of the present application;

[0028] Figure 3C A partially enlarged cross-sectional structural diagram of a base provided in an embodiment of the present application;

[0029] Figure 4A A schematic diagram of a top view of the structure of a tray and wafer provided in an embodiment of the present application;

[0030] Figure 4B A schematic cross-sectional view of the cooperation between a tray and a wafer provided in an embodiment of the present application;

[0031] Figure 5 A schematic cross-sectional view of a target material provided in an embodiment of the present application;

[0032] Figure 6A A partially enlarged cross-sectional structural diagram of a load-bearing device in a first state provided by an embodiment of the present application;

[0033] Figure 6B A partially enlarged cross-sectional structural diagram of a carrying device in a second state provided by an embodiment of the present application;

[0034] Figure 6C A partially enlarged cross-sectional structural diagram of a load-bearing device in a third state provided by an embodiment of the present application;

[0035] Figure 7 A schematic cross-sectional view of a semiconductor process equipment in a process state according to an embodiment of the present application. DETAILED DESCRIPTION

[0036] The present application is described in detail below. Examples of embodiments of the present application are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar components or components having the same or similar functions. In addition, if the detailed description of the known technology is not necessary for the features of the present application shown, it will be omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and are not to be construed as limiting the present application.

[0037] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in common dictionaries should be understood to have meanings consistent with their meanings in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless specifically defined as herein.

[0038] In the prior art, when the target size is constant, since multiple wafers are arranged on the tray, and the target and wafer are both arranged horizontally. Figure 1 As shown, multiple wafers located at the edge of the tray are close to the inner wall of the process chamber. Due to the boundary effect between the target material and the liner 208, the target material near the edge area sputters outward and falls on the liner 208, while the sputtered part sputters inward to the inner side of the wafer located at the edge of the tray. Only a small part directly above the wafer has a positive effect on the thin film deposition, resulting in the wafer located at the edge of the tray being thicker on the inside and thinner on the outside, and causing the film thickness uniformity of each wafer on the same tray to be inconsistent. For example, the film thickness uniformity of the wafer near the edge of the tray is poor (film thickness uniformity is 4%), while the film thickness uniformity of the wafer located in the center of the tray is better (film thickness uniformity <2%), resulting in inconsistent wafer film thickness uniformity, and poor film thickness uniformity will also result in low product yield.

[0039] The following describes in detail the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems with specific embodiments.

[0040] The embodiment of the present application provides a carrying device, which is arranged in a process chamber of a semiconductor process equipment and is used to carry wafers. The structural diagram of the carrying device is shown in FIG. Figure 1 As shown, it includes: a tray 1, a base 2 and a pin assembly (not shown in the figure); a supporting structure 3 is provided on the tray 1, and the supporting structure 3 passes through the tray 1 in the vertical direction, and is used to support multiple wafers 100 in the horizontal direction; a supporting structure 4 is provided on the base 2, and the supporting structure 4 is corresponding to the supporting structure 3, and is used to pass through the supporting structure 3 when the tray 1 is stacked on the base 2 so that the multiple wafers 100 are tilted toward the center of the base 2 at a preset angle; the pin assembly is provided at the bottom of the base 2, and is used to drive the tray 1 to rise and fall relative to the base 2, so that the tray 1 can be selectively located above the base 2, or stacked on the base 2.

[0041] like Figure 1As shown, the semiconductor process equipment can be used to perform a physical vapor deposition process to deposit an ITO film on the wafer 100 by magnetron sputtering, but the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings according to actual conditions. The base 2 of the carrying device is arranged at the bottom of the process chamber 201 and can be coaxially arranged with the target 205 of the upper electrode mechanism. The carrying device may include a tray 1, a base 2 and a pin assembly, wherein a carrying structure 3 is provided on the tray 1, and the carrying structure 3 can pass through the tray 1 in the vertical direction to carry a plurality of wafers 100 arranged in the horizontal direction, and it can be transported to the base 2 in the process chamber 201 by a robot. A push-up structure 4 is provided on the base 2, and the push-up structure 4 can be arranged corresponding to the supporting structure 3. When the tray 1 drives the wafers 100 to be stacked on the base 2, the push-up structure 4 can pass through the supporting structure 3 to tilt the multiple wafers 100 toward the center of the base 2 at a preset angle. For example, the multiple wafers 100 near the edge of the tray 1 are tilted toward the center of the base 2, thereby ensuring the uniformity of the film thickness of the multiple wafers 100. A pin assembly (not shown in the figure) can be provided at the bottom of the base 2 and can pass through the base 2 to drive the tray 1 to move up and down, so that the tray 1 can be located above the base 2 or stacked on the base 2. However, the embodiments of the present application do not limit the specific implementation of the pin assembly. In addition, after the thin film deposition process on the wafers 100 is completed, the pin assembly can drive the tray 1 to separate from the base 2, so that the multiple wafers 100 return to a horizontal state, thereby facilitating the transportation of the wafers 100.

[0042] In the embodiment of the present application, a supporting structure is provided on the tray, and a supporting structure is provided on the base, and the supporting structure can pass through the supporting structure to support the wafers, so that multiple wafers can be tilted toward the center of the base at a preset angle, so that the bombarded target material can be deposited more on the multiple wafers located at the edge of the tray, thereby making the film thickness uniformity of the multiple wafers located at the edge of the tray higher, and making the film thickness uniformity between all wafers on the tray better, thereby greatly improving the product yield. In addition, the use of a pin assembly to drive the tray to be selectively stacked on the base can also enable the pin assembly to drive the tray to separate from the base after the wafer has completed the process, so that the multiple wafers can be restored to a horizontal state, thereby facilitating the transportation of the wafers.

[0043] In one embodiment of the present application, Figures 1 to 2B As shown, the supporting structure 3 includes a central through hole 31 and edge through holes 32 . The central through hole 31 is located at the center of the tray 1 , and a plurality of edge through holes 32 are evenly and spaced apart along the circumference of the central through hole 31 .

[0044] like Figures 1 to 2BAs shown, the tray 1 can be a disc-shaped structure made of metal material, and the supporting structure 3 can include a central through hole 31 and six edge through holes 32, wherein the central through hole 31 is arranged concentrically with the tray 1, and multiple edge through holes 32 are distributed in the circumferential direction of the central through hole 31 and are evenly and spaced apart. The central through hole 31 and the edge through holes 32 are respectively used to support multiple wafers 100. In a specific embodiment of the present application, the aperture of the central through hole 31 and the edge through holes 32 can be set to between 94 mm and 95 mm to correspond to 4-inch wafers 100, but the embodiment of the present application does not limit the specific size of the central through hole 31 and the edge through holes 32, and the corresponding wafer 100 specifications. Those skilled in the art can adjust the settings according to actual conditions. With the above design, since multiple edge through holes 32 are arranged around the central through hole 31 to correspond to the circular structure of the target material 205, the film thickness uniformity of the wafer 100 is further improved.

[0045] It should be noted that the present embodiment does not limit the specific shape of the tray 1 or the arrangement of the central through-holes 31 and the edge through-holes 32. For example, the tray 1 may be a rectangular plate structure, and the central through-holes 31 and the edge through-holes 32 may be arranged in a rectangular array. Therefore, the present embodiment is not limited to this, and those skilled in the art may adjust the arrangement according to actual circumstances.

[0046] In one embodiment of the present application, Figure 1 、 Figures 3A to 3B As shown, the supporting structure 4 includes a central boss 41 and an edge boss 42. The central boss 41 is provided in correspondence with the central through hole 31 and is used to pass through the central through hole 31 to support the wafer 100. The edge bosses 42 are provided in a one-to-one correspondence with the edge through holes 32 and are used to pass through the edge through holes 32 to support the wafer 100. Optionally, the central boss and the edge bosses are integrally formed with the base or are removable.

[0047] like Figure 1 、 Figures 3A to 3BAs shown, the base 2 is a cylindrical structure made of metal. The supporting structure 4 includes a central boss 41 and an edge boss 42. The central boss 41 is coaxially formed on the top surface of the base 2 and is arranged corresponding to the central through hole 31, so as to pass through the central through hole to support the wafer 100. Six edge bosses 42 are evenly and spaced apart around the circumference of the central boss 41. The six edge bosses 42 are arranged one-to-one with the multiple edge through holes 32, so as to pass through the edge through holes 32 and support multiple wafers 100, thereby ensuring that the wafers 100 on the multiple edge bosses 42 are uniformly tilted toward the center of the base 2. In one embodiment of the present application, the diameter of the central boss 41 and the edge bosses 42 can be set to between 90 mm and 92 mm to correspond to the central through hole 31 and the edge through holes 32. However, the specific dimensions of the central boss 41 and the edge bosses 42, or the corresponding wafer 100 specifications, are not limited in this embodiment. Those skilled in the art can adjust the settings according to actual conditions. With the above design, the structures of the base 2 and the tray 1 are arranged correspondingly, making the embodiment of the present application simple in structure and also corresponding to the circular structure of the target material 205, thereby further improving the film thickness uniformity of the wafer 100. Furthermore, the center boss 41 and the edge boss 42 can be formed integrally on the base 2, thereby saving application and manufacturing costs; the center boss 41 and the edge boss 42 are arranged in a detachable manner from the base 2, which not only facilitates adjustment of the inclination angle of the edge boss 42, but also facilitates adjustment of the height of the center boss 41 and the edge boss 42, thereby adapting to different types of trays 1, thereby reducing application and maintenance costs and improving the applicability and scope of application of the embodiment of the present application.

[0048] It should be noted that the embodiments of the present application do not limit the specific shape of the base 2 or the arrangement of the central boss 41 and the edge bosses 42. For example, the base 2 may be a rectangular plate structure, and the central boss 41 and the edge bosses 42 may be arranged in a rectangular array. Therefore, the embodiments of the present application are not limited to this, and those skilled in the art may adjust the arrangement according to actual circumstances.

[0049] In one embodiment of the present application, Figures 3A to 3C As shown, the top surface of the central boss 41 is parallel to the surface of the base 2, and the top surfaces of the plurality of edge bosses 42 are all inclined along the radial direction of the central boss 41 and toward the location of the central boss 41, with the top surfaces forming a preset angle with the horizontal direction. Optionally, the preset angle is 2 to 4 degrees.

[0050] like Figures 3A to 3CAs shown, the center boss 41 and the plurality of edge bosses 42 are 7 mm to 7.5 mm higher than the top surface of the base 2. The top surface of the center boss 41 can be arranged parallel to the surface of the base 2, that is, the top surface of the center boss 41 can be parallel to the horizontal direction. The top surfaces of the plurality of edge bosses 42 are inclined inwardly along the radial direction of the center boss 41, that is, the side of the edge boss 42 close to the center boss 41 is relatively lower, while the side away from the center boss 41 is relatively higher. In other words, the top surfaces of the plurality of edge bosses 42 are all inclined along the radial direction of the center boss 41 and toward the position where the center boss 41 is located. The highest point of the top surface of the edge boss 42 is flush with the top surface of the center boss 41, and there is a preset angle between the top surface of the edge boss 42 and the top surface of the center boss 41, that is, there is a preset angle between the top surface of the edge boss 42 and the horizontal direction. The preset angle can be set to any value between 2 degrees and 4 degrees. Optionally, the preset angle can be set to 2.5 degrees to improve the uniformity of the film thickness of the wafers 100. The above design allows the base 2 to adopt a relatively simple structure, and in conjunction with the tray 1, multiple wafers 100 can be tilted toward the center of the base 2 at a preset angle, thereby simplifying the structure of the embodiment of the present application and significantly reducing application and maintenance costs.

[0051] In one embodiment of the present application, Figures 1 to 2B As shown, a plurality of limiting structures 5 are protruding from the tray 1. The limiting structure 5 is located between the central through hole 31 and any two adjacent edge through holes 32. The outer periphery of the limiting structure 5 has three limiting arc surfaces 51. The limiting arc surfaces 51 are used to stop the edge of the wafer 100 to limit the position of the wafer 100 in the central through hole 31 and the edge through hole 32.

[0052] like Figures 1 to 2B As shown, when the tray 1 has six edge through holes 32, six limiting structures 5 may be protruding from the tray 1, and the six limiting structures 5 are evenly and spaced apart around the circumference of the central through hole 31, that is, each limiting structure 5 is located between the central through hole 31 and any two adjacent edge through holes 32. The shape of the limiting structure 5 may correspond to the shape between the central through hole 31 and the two adjacent edge through holes 32, and the specific shape of the limiting structure 5 may be a "quasi-triangular" structure. The outer periphery of the limiting structure 5 has three concave limiting arc surfaces 51, that is, the limiting arc surface 51 may be an arc surface structure with the outer periphery of the limiting structure 5 concave toward the center direction, so as to cooperate with the circular circumference of the wafer 100. The three limiting arc surfaces 51 can limit and stop the wafer 100 carried at the central through hole 31 and the two edge through holes 32, thereby preventing the wafer 100 from sliding on the tray 1. With reference to FIG. Figures 3A to 3BAs shown, when the tray 1 is lowered onto the base 2, the wafers 100 will slide toward the center of the base 2 due to the tilted arrangement of the multiple edge bosses 42. The multiple limiting structures 5 can stop the multiple wafers 100 and prevent them from sliding during the tilting process. The above design makes the embodiment of the present application more stable, so that the positions of the multiple wafers 100 are always unique, thereby improving the uniformity of the film thickness of the wafers 100.

[0053] In one embodiment of the present application, Figures 2A to 4B As shown, a receiving groove 11 is provided on the tray 1, and the central through hole 31, the edge through hole 32 and the limiting structure 5 are all located on the bottom wall of the receiving groove 11. The side walls of the receiving groove 11 are arranged around the periphery of multiple edge through holes 32. The bottom wall of the receiving groove 11 is used to support the wafer 100, and the side walls of the limiting structure 5 cooperate with the limiting arc surface 51 to limit the wafer 100.

[0054] like Figures 2A to 4B As shown, the tray 1 can adopt a circular disc structure, and a receiving groove 11 is punched on the tray 1. The side wall of the receiving groove 11 can be arranged around the periphery of the plurality of edge through holes 32, that is, the overall shape of the receiving groove 11 can be a "plum blossom" structure, as shown in FIG. Figure 2A and Figure 2B As shown. The central through hole 31, multiple edge through holes 32 and the limiting structure 5 are all located on the bottom wall of the accommodating groove 11, so that the bottom wall of the accommodating groove 11 is used to support the wafer 100, and the two limiting arc surfaces 51 of the limiting structure 5 cooperate with the side walls of the accommodating groove 11 on the periphery of the two edge through holes 32 to form two circular limiting areas for limiting the wafer 100 at the two edge through holes 32; the limiting arc surfaces 51 of the multiple limiting structures 5 cooperate to form a circular limiting area for limiting the wafer 100 at the central through hole 31. In a specific embodiment of the present application, the diameter of the above-mentioned limiting area can be set to 100 mm to 101 mm to correspond to a 4-inch sapphire wafer. For details, please refer to the following. Figures 4A to 4B With the above design, since the accommodating groove 11 cooperates with the limiting structure 5 to limit the wafer 100, the structure of the tray 1 in the embodiment of the present application is relatively simple, thereby greatly reducing the application and maintenance costs.

[0055] It should be noted that the embodiment of the present application does not limit the size of the above-mentioned limiting area and the specifications of the wafer. The limiting area needs to be set corresponding to the central through hole 31 and the edge through hole 32, and to the specifications of the wafer 100. Therefore, the embodiment of the present application is not limited to this, and those skilled in the art can adjust the settings according to actual conditions.

[0056] In one embodiment of the present application, Figures 1 to 3CAs shown, the carrying device also includes a plurality of positioning structures 6 arranged between the tray 1 and the base 2, and the plurality of positioning structures 6 are arranged in a one-to-one correspondence with the plurality of limiting structures 5, for positioning the tray 1 and the wafer 100 during the lifting process of the tray 1. Specifically, a plurality of positioning structures 6 are arranged between the tray 1 and the base 2. The plurality of positioning structures 6 are arranged, for example, around the center through hole 31 and the center boss 41, and are arranged in a one-to-one correspondence with the plurality of limiting structures 5. For example, part of each positioning structure 6 is located on the tray 1 and part is located on the base 2. When the tray 1 is lowered onto the base 2, the plurality of positioning structures 6 can position the tray 1 and the wafer 100, thereby not only enabling the center boss 41 and the edge boss 42 to accurately carry the wafer 100, but also avoiding the sliding displacement of the wafer 100 caused by the tilting effect of the edge boss 42. The above design makes the wafer position stability of the embodiment of the present application higher, thereby further improving the film thickness uniformity of each wafer 100. However, the embodiment of the present application does not limit the specific setting method of the positioning structure 6, and those skilled in the art can adjust the setting according to actual conditions.

[0057] In one embodiment of the present application, Figures 1 to 3C As shown, each positioning structure 6 includes a positioning hole 61 and a positioning column 62. The positioning hole 61 passes through the center position of the limiting structure 5 and is arranged tangent to the limiting arc surface 51; the positioning columns 62 of multiple positioning structures 6 are arranged around the center boss 41 and are used to pass through the positioning hole 61 to position the tray 1 and the wafer 100.

[0058] like Figures 1 to 3C As shown, the positioning holes 61 of the six positioning structures 6 are respectively located on the multiple limiting structures 5. Each limiting structure 5 is penetrated by a circular positioning hole 61. The positioning hole 61 is located in the center of the limiting structure 5 and is tangent to the three limiting arc surfaces 51 of the limiting structure 5. That is, the inner wall of the positioning hole 61 coincides with the three limiting arc surfaces 51, or is slightly larger than the area formed by the three limiting arc surfaces 51. The positioning column 62 can be set to correspond to the shape of the positioning hole 61. For example, the positioning column 62 is a cylinder protruding from the top surface of the base 2. The height of the positioning column 62 relative to the top surface of the base 2 can be set to 9 mm to 9.5 mm. However, the embodiment of the present application is not limited to this. Those skilled in the art can adjust the setting according to actual conditions. In actual use, the plurality of positioning posts 62 first extend into the plurality of positioning holes 61 to ensure the accuracy of the relative movement between the tray 1 and the base 2. After the positioning posts 62 pass through the positioning holes 61, the positioning posts 62 cooperate with the limiting arc surface 51 to limit the position of the wafer 100, thereby ensuring the accuracy of the relative movement between the wafer 100 and the base 2. The above design, which only uses a relatively simple structure, can achieve the accuracy of the relative movement between the tray 1, wafer 100 and base 2, which can not only improve the stability of the embodiment of the present application, but also significantly reduce the application and maintenance costs.

[0059] In one embodiment of the present application, Figures 1 to 3C As shown, the center boss 41, edge boss 42, and positioning post 62 have a first height relative to the top surface of the base 2 in the vertical direction, and the tray 1 has a second height in the vertical direction, with the first height being greater than the second height. Specifically, the highest point of the edge boss 42 can be flush with the top surface of the center boss 41, that is, both have the first height relative to the top surface of the base 2 in the vertical direction; the top surface of the positioning post 62 can be flush with the top surface of the center boss 41, that is, the positioning post 62 has the first height relative to the top surface of the base 2 in the vertical direction. However, the embodiments of the present application are not limited to this. For example, in some embodiments, the height of the positioning post 62 can be greater than the height of the center boss 41. The tray 1 has a second height in the vertical direction, which includes structures such as the receiving groove 11 formed on the tray 1. The first height is greater than the second height, so that the center boss 41 and edge boss 42 fully support the wafer 100, thereby achieving a better tilting effect for the wafer 100 and improving the film thickness uniformity of the wafer 100. However, the present invention is not limited to this embodiment. For example, by reducing the first height, the central boss 41 and the edge boss 42 can just pass through the central through hole 31 and the edge through hole 32, and the two cooperate with each other to support the wafer 100. Therefore, the present invention is not limited to this embodiment, and those skilled in the art can adjust the settings according to actual conditions.

[0060] Based on the same inventive concept, the embodiment of the present application provides an upper electrode mechanism, which is arranged on the top of the semiconductor process equipment. Figure 1 and Figure 5 As shown, a target material is included, wherein the bottom edge of the target material has an inclined surface structure extending in a circumferential direction, the inclined surface structure is inclined from top to bottom and from the center to the edge, and a preset angle is formed between the inclined surface structure and the bottom surface. Optionally, the preset angle is 165 degrees to 170 degrees.

[0061] like Figure 1 and Figure 5As shown, the upper electrode mechanism is disposed at the top of the process chamber 201 and includes a support sleeve 202, a magnetron device 203, a power supply device 204, and a target 205. The magnetron device 203 is disposed within the support sleeve 202, and the power supply device 204 and the target 205 are disposed at the top and bottom of the support sleeve 202, respectively. The power supply device 204 is used to apply radio frequency power and / or direct current power to the target 205, and the magnetron device 203 is used to guide plasma to bombard the target 205. An annular inclined surface structure 207 may also be protruded from the bottom surface of the target 205. The inner circumference of the inclined surface structure 207 forms a preset angle with the bottom surface of the target body, and the preset angle can be set to any value between 165 degrees and 170 degrees. In one embodiment of the present application, the target 205 has a diameter of 444.5 mm, and the diameter of the inclined surface structure 207 at the bottom surface of the target 205 is 404 mm. However, this embodiment is not limited to this, and those skilled in the art may adjust the configuration based on actual circumstances. This design allows more of the bombarded target 205 to be deposited onto the multiple wafers 100 located at the edge of the tray 1, thereby improving the uniformity of the film thickness across the wafers 100.

[0062] Based on the same inventive concept, the present invention provides a semiconductor process equipment. Figure 1 As shown, it includes: a process chamber 201, an upper electrode mechanism and a carrying device provided as in the above embodiments, wherein the upper electrode mechanism is arranged at the top of the process chamber 201, the carrying device is arranged in the process chamber 201, and the carrying device is coaxially arranged with the target material 205 of the upper electrode mechanism.

[0063] like Figure 1 As shown, the upper electrode mechanism is arranged at the top of the process chamber 201, the carrying device is arranged in the process chamber 201 and is coaxially arranged with the target 205. The carrying device is arranged at the bottom of the process chamber 201 through a lifting bellows 206, for example, to achieve the lifting action of the carrying device in the process chamber 201, but the embodiment of the present application is not limited to this. Figure 7 As shown, since the target 205 is set horizontally, that is, the target 205 does not include the inclined surface structure 207, the multiple wafers 100 near the edge of the tray 1 are tilted inward, so that the wafer 100 can not only deposit the target 205 bombarded from the upper side (region ①), but also the target 205 bombarded from the inner circle (region ②) can be deposited on the wafer 100, solving the problem of thin thickness of the outer side of the wafer 100 near the edge of the tray 1, thereby improving the uniformity of the film thickness of the wafer 100. Figure 5As shown, the target material 205 can be the target material of the above embodiment, that is, the bottom of the target material 205 has a bevel structure 207, and the multiple wafers 100 near the edge of the tray 1 are tilted inward. Therefore, the bevel structure 207 can enable more of the bombarded target material 205 to be deposited on the multiple wafers 100 located at the edge of the tray 1, thereby further improving the film thickness uniformity of the wafers 100. However, the embodiments of the present application are not limited to this. For example, the semiconductor process equipment may only include the upper electrode mechanism of the above embodiment, and those skilled in the art can adjust the configuration according to actual conditions.

[0064] In order to further illustrate the beneficial effects of the embodiments of the present application, the specific implementation methods and principles of the embodiments of the present application are described below with reference to the accompanying drawings.

[0065] like Figures 1 to 7 As shown, when the ejector assembly drives the tray 1 to begin to descend, all wafers 100 are on the tray 1. Figure 6A As shown. When the ejector assembly drives the tray 1 to continue to descend, the six positioning holes 61 on the tray 1 pass through the six positioning posts 62 on the surface of the base 2, realizing the positioning function of the tray 1, wafer 100 and base 2 during the movement, and preventing the wafer 100 and tray 1 from sliding. The wafer 100 at the center through hole 31 first contacts the center boss 41 on the base 2 to separate from the tray 1. At this time, the outer edge of the wafer 100 at the edge through hole 32 just begins to contact the edge boss 42 on the base 2. For details, refer to Figure 6B As shown. When the ejector assembly drives the tray 1 to continue to descend, the wafer 100 on the edge through hole 32 is separated from the tray 122. Because the positioning structure 6 has a positioning function on the wafer 100, even if the edge boss 42 is an inclined surface, it can ensure that the wafer 100 falls normally on the edge boss 42. At this time, the ejector assembly continues to descend, and the tray 1 is completely stacked on the base 2. The ejector assembly is separated from the tray 1. For details, refer to FIG. Figure 6C As shown. Furthermore, the lifting bellows 206 drives the carrier device to rise to the process position, introduces argon and other process gases into the process chamber 201, ionizes plasma in the process chamber 201, and the plasma bombards the target material 205 to complete the deposition of the ITO film. After the process is completed, the above steps are performed in reverse order, and the wafer 100 can be transferred from the base 2 to the tray 1. The above design allows the embodiment of the present application to achieve switching between the horizontal state and the inclined state during the transfer of the wafer 100, thereby not only improving the film thickness uniformity of the wafer 100, but also simplifying the process flow, thereby greatly improving the process efficiency.

[0066] By applying the embodiments of the present application, at least the following beneficial effects can be achieved:

[0067] In the embodiment of the present application, a supporting structure is provided on the tray, and a supporting structure is provided on the base, and the supporting structure can pass through the supporting structure to support the wafers, so that multiple wafers can be tilted toward the center of the base at a preset angle, so that the bombarded target material can be deposited more on the multiple wafers located at the edge of the tray, thereby making the film thickness uniformity of the multiple wafers located at the edge of the tray higher, and making the film thickness uniformity between all wafers on the tray better, thereby greatly improving the product yield. In addition, the use of a pin assembly to drive the tray to be selectively stacked on the base can also enable the pin assembly to drive the tray to separate from the base after the wafer has completed the process, so that the multiple wafers can be restored to a horizontal state, thereby facilitating the transportation of the wafers.

[0068] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

[0069] In the description of this application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0070] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0071] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to direct connections, indirect connections through an intermediate medium, or internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0072] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0073] The above description is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A carrier device, arranged in a process chamber of a semiconductor process equipment, for carrying a wafer, characterized in that: include: Tray, base and ejector assembly; The tray is provided with a carrying structure, which passes through the tray in a vertical direction and is used to carry multiple wafers in a horizontal direction; The base is provided with a supporting structure, which is arranged corresponding to the supporting structure and is used to pass through the supporting structure to support multiple wafers when the tray is stacked on the base, and can make the multiple wafers tilt toward the center of the base at a preset angle; The ejector assembly is provided at the bottom of the base, and is used to drive the tray to rise and fall relative to the base, so that the tray can be selectively positioned above the base or stacked on the base; The bearing structure includes a central through hole and edge through holes, wherein the central through hole is located at the center of the tray, and a plurality of edge through holes are evenly and spaced apart along the circumference of the central through hole; A plurality of limiting structures are protruding from the tray, and the limiting structures are located between the central through hole and any two adjacent edge through holes. The outer periphery of the limiting structure has three limiting arc surfaces, and the limiting arc surfaces are used to stop the edges of the wafer to limit the position of the wafer in the central through hole and the edge through holes.

2. The carrying device according to claim 1, characterized in that: The supporting structure includes a central boss and an edge boss. The central boss is arranged corresponding to the central through hole and is used to pass through the central through hole to support the wafer; multiple edge bosses are arranged in a one-to-one correspondence with multiple edge through holes and are used to pass through the edge through holes to support the wafer.

3. The carrying device according to claim 2, characterized in that: The top surface of the central boss is parallel to the base surface, the top surfaces of the plurality of edge bosses are all inclined along the radial direction of the central boss and toward the position where the central boss is located, and the top surface of the edge boss forms the preset angle with the base surface.

4. The carrying device according to claim 2, characterized in that: A receiving groove is provided on the tray, and the central through hole, the edge through hole and the limiting structure are all located on the bottom wall of the receiving groove. The side walls of the receiving groove are arranged around the outer periphery of multiple edge through holes. The bottom wall of the receiving groove is used to support the wafer, and the side walls of the limiting structure cooperate with the limiting arc surface to limit the wafer.

5. The carrying device according to claim 4, characterized in that: The carrying device also includes a plurality of positioning structures arranged between the tray and the base. The plurality of positioning structures and the plurality of limiting structures are arranged in a one-to-one correspondence and are used to position the tray and the wafer during the lifting process of the tray.

6. The carrying device according to claim 5, characterized in that: Each of the positioning structures includes a positioning hole and a positioning column. The positioning hole passes through the center position of the limiting structure and is arranged tangent to the limiting arc surface. Multiple positioning columns of the positioning structures are arranged around the center boss and are used to pass through the positioning hole to position the tray and the wafer.

7. The carrying device according to claim 6, characterized in that: The central boss, the edge boss, and the positioning column have a first height relative to the top surface of the base in the vertical direction, and the tray has a second height along the vertical direction, and the first height is greater than the second height.

8. The carrying device according to claim 2, wherein: The central boss and the edge boss are integrally formed with the base or are detachable.

9. The carrying device according to claim 3, characterized in that: The preset angle is 2 degrees to 4 degrees.

10. A semiconductor process equipment, characterized in that: include: A process chamber and a carrying device according to any one of claims 1 to 9.

11. The semiconductor process equipment according to claim 10, further comprising: Upper electrode mechanism; wherein, the upper electrode mechanism is arranged at the top of the process chamber, the carrying device is arranged in the process chamber, and the carrying device is coaxially arranged with the target material of the upper electrode mechanism.

12. The semiconductor processing equipment according to claim 11, wherein the upper electrode mechanism includes a target material, and the bottom edge of the target material has a bevel structure extending circumferentially, the bevel structure is inclined from top to bottom and from the center to the edge, and a preset angle is formed between the bevel structure and the bottom surface.

13. The semiconductor process equipment according to claim 12, wherein: The preset angle is 165 degrees to 170 degrees.

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