A wafer temporary bonding method and a wafer debonding method

Abstract

The present application discloses a wafer temporary bonding method and a debonding method, which relates to the field of semiconductor technology and can solve the problem of adhesive residue in existing temporary bonding methods and debonding methods. A wafer temporary bonding method comprises: performing surface treatment on the bonding surface of the wafer and the bonding surface of the protective wafer respectively; using photoresist, bonding the bonding surface of the wafer and the bonding surface of the protective wafer to obtain a temporary bonding body.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a wafer temporary bonding method and a wafer debonding method. Background Art

[0002] At present, before wafers are bonded to form a three-dimensional chip, some single wafers need to undergo wafer thinning or wafer etching and other process treatments. During wafer thinning or wafer etching and other process treatments, in order to protect the circuits on the circuit side of the single wafer from damage, the single wafer needs to be temporarily bonded and debonded. In the temporary bonding process, the single wafer and the protective wafer are usually aligned and bonded by spin-coating an adhesive on the surface of the wafer. After the adhesive is cured, the two wafers are bonded together, and then the adhesive is inactivated by external factors to achieve debonding.

[0003] However, the existing debonding process usually adopts a hot melt debonding process, which is prone to incomplete removal of the adhesive, and there is a problem of adhesive residue on the surface of the wafer, which in turn affects the performance of the devices or circuits on the wafer. Summary of the invention

[0004] The embodiments of the present application provide a wafer temporary bonding method and a wafer debonding method, which can solve the problem of adhesive residue existing in the existing temporary bonding method and debonding method.

[0005] According to a first aspect of an embodiment of the present application, a wafer temporary bonding method is provided, comprising:

[0006] performing surface treatment on the bonding surface of the wafer and the bonding surface of the protective wafer respectively;

[0007] The bonding surface of the wafer is bonded to the bonding surface of the protective wafer by using photoresist to obtain a temporary bonding body.

[0008] In some embodiments, the step of performing surface treatment on the bonding surface of the wafer and the bonding surface of the protective wafer respectively includes:

[0009] Using a cleaning liquid, scanningly cleaning the bonding surface of the wafer rotating at a first set speed; and,

[0010] The bonding surface of the protection wafer rotating at a second set speed is scan-cleaned by using the cleaning liquid.

[0011] In some embodiments, the step of performing surface treatment on the bonding surface of the wafer and the bonding surface of the protective wafer respectively further comprises:

[0012] The bonding surface of the cleaned wafer and / or the bonding surface of the protective wafer is / are subjected to surface hydrophobicity treatment.

[0013] In some embodiments, the step of performing surface hydrophobic treatment on the bonding surface of the cleaned wafer and / or the bonding surface of the protective wafer comprises:

[0014] In a set temperature environment, spraying hexamethyldisilazane onto the bonding surface of the wafer, and / or spraying hexamethyldisilazane onto the bonding surface of the protective wafer;

[0015] The wafer and / or the protective wafer after spraying hexamethyldisilazane is cooled to room temperature.

[0016] In some embodiments, the step of bonding the bonding surface of the wafer to the bonding surface of the protective wafer using photoresist to obtain a temporary bonding body includes:

[0017] Coating a photoresist on the bonding surface of the wafer or the bonding surface of the protective wafer;

[0018] Pre-baking the wafer or the protective wafer coated with the photoresist;

[0019] The bonding surface of the wafer is bonded to the bonding surface of the protective wafer by means of the photoresist to obtain a temporary bonding body.

[0020] In some embodiments, before the bonding surface of the wafer is bonded to the bonding surface of the protective wafer by the photoresist to obtain a temporary bonded body, the process further includes:

[0021] Performing a spray treatment on the bonding surface of the protective wafer, and stopping when the spray solution of the spray treatment completely covers the bonding surface of the protective wafer;

[0022] The bonding surface of the wafer is bonded to the bonding surface of the protective wafer by the photoresist to obtain a temporary bonding body, including:

[0023] Laminating the bonding surface of the spray-treated protective wafer with the bonding surface of the wafer coated with the photoresist to obtain a laminated body;

[0024] The bonded body is post-baked to obtain the temporary bonded body.

[0025] In some embodiments, before pre-baking the wafer or the protective wafer coated with the photoresist, the method further comprises:

[0026] The wafer or the protective wafer coated with the photoresist is subjected to edge cleaning treatment.

[0027] According to a second aspect of an embodiment of the present application, a method for debonding a wafer temporarily bonded is provided, comprising:

[0028] exposing the temporary bonded body obtained according to the wafer temporary bonding method as described in the first aspect;

[0029] Applying shear force to the exposed wafer of the temporary bonding body and the protective wafer respectively, so as to separate the wafer of the temporary bonding body and the protective wafer;

[0030] The photoresist on the bonding surface of the separated wafer and the photoresist on the bonding surface of the protective wafer are developed by using a developer.

[0031] In some embodiments, the exposing the temporary bonding body comprises:

[0032] On a side of the temporary bonding body close to the protective wafer, ultraviolet light is irradiated toward the protective wafer to expose the temporary bonding body.

[0033] In some embodiments, the exposing the temporary bonding body comprises:

[0034] exposing the temporary bonding body according to a first set time;

[0035] After the exposure is completed, checking whether the photoresist generates bubbles;

[0036] In response to the photoresist not generating bubbles, the temporary bonding body is exposed for a second set time.

[0037] The wafer temporary bonding method and debonding method provided in the embodiment of the present application, by using photoresist, the bonding surface of the wafer is bonded to the bonding surface of the protection wafer, and a temporary bonding body is obtained. The protection wafer and the wafer are bonded together by the viscosity of the photoresist to obtain a temporary bonding body, and the protection wafer in the temporary bonding body plays a role of temporary protection for the wafer. In the debonding process, the light-sensitive performance of the photoresist can be utilized to expose and develop, so that the protection wafer is separated from the wafer, and the photoresist is removed. The dissolution of the photoresist by the developer can ensure the removal effect of the photoresist, and it is not easy to produce photoresist residues, which can solve the problem of adhesive residues in the existing temporary bonding method and the debonding method, and avoid the adhesive residues affecting the performance of components and circuits on the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A schematic flow chart of a wafer temporary bonding method provided in an embodiment of the present application;

[0039] Figure 2 A schematic flow chart of a debonding method for temporary wafer bonding provided in an embodiment of the present application;

[0040] Figure 3A schematic state diagram of a temporary bonding body of a wafer temporary bonding debonding method provided in an embodiment of the present application. DETAILED DESCRIPTION

[0041] In order to better understand the technical solutions provided by the embodiments of this specification, the technical solutions of the embodiments of this specification are described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of this specification and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of this specification, rather than limitations on the technical solutions of this specification. In the absence of conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.

[0042] In this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements limited by the statement "comprise one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements. The term "more than two" includes two or more than two situations.

[0043] At present, before wafers are bonded to form a three-dimensional chip, some single wafers need to undergo wafer thinning or wafer etching and other process treatments. During the wafer thinning or wafer etching process, in order to protect the circuits on the circuit side of the single wafer from damage, the single wafer needs to be temporarily bonded and debonded. In the process of temporary bonding, usually by spin-coating an adhesive on the surface of the wafer, the single wafer and the protective wafer are aligned and bonded, and the two wafers are bonded together after the adhesive is cured. After that, the adhesive is inactivated under external influences to achieve debonding. However, the existing debonding process usually adopts a hot melt debonding process, which is prone to incomplete removal of the adhesive, and there is a problem of adhesive residue on the surface of the wafer, which in turn affects the performance of the devices or circuits on the wafer.

[0044] In view of this, an embodiment of the present application provides a wafer temporary bonding method and a debonding method, which can solve the problem of adhesive residue existing in the existing temporary bonding method and debonding method.

[0045] In a first aspect of an embodiment of the present application, a wafer temporary bonding method is provided. Figure 1 A schematic flow chart of a wafer temporary bonding method provided in an embodiment of the present application. Figure 1 As shown, the wafer temporary bonding method provided in the embodiment of the present application includes:

[0046] S100: performing surface treatment on the bonding surface of the wafer and the bonding surface of the protective wafer respectively.

[0047] It should be noted that the wafer mentioned in this application, which may also be referred to as a grain or chip, refers to a silicon wafer with devices and circuits prepared on a silicon substrate. The protective wafer may be a bare silicon wafer, a quartz wafer or other wafer. There is no need to make devices or circuits on the protective wafer. The protective wafer is only a temporary protection for the wafer and has no electrical function. The bonding surface of the protective wafer may be any side surface on both sides of the protective wafer, and the surface used to bond with the wafer is the bonding surface of the protective wafer. The bonding surface of the wafer is the surface on the circuit side, and the circuit side of the wafer is provided with components and connecting circuits. The components may be prepared using a thin film process, and the embodiments of this application are not specifically limited. The bonding surface of the wafer in this application is also the bonding surface of the subsequent wafer and wafer bonding to obtain a three-dimensional chip. The surface treatment of the bonding surface of the wafer and the surface treatment of the bonding surface of the protective wafer may be performed simultaneously or separately, and the embodiments of this application are not specifically limited. The surface treatment of the wafer and the protective wafer can be performed simultaneously by using a dual-chamber or multi-chamber surface treatment device, or the surface treatment of the wafer and the protective wafer can be performed successively by using the same device.

[0048] S200: Using photoresist, the bonding surface of the wafer is bonded to the bonding surface of the protective wafer to obtain a temporary bonding body. Surface treatment is performed on the bonding surface of the wafer, and surface treatment is performed on the bonding surface of the protective wafer, which is more conducive to the adhesion of the photoresist. Photoresist, also known as photoresist, is a mixed liquid that is sensitive to light. Photoresist is composed of photoinitiator, photoresist resin, monomer, solvent and other additives. The traditional use of photoresist is as a graphic transfer medium, which can transfer the mask pattern to the substrate by utilizing the different solubility after light reaction. The embodiment of the present application applies photoresist to the process of temporary bonding of wafers, utilizes the photosensitivity and adhesiveness of photoresist, uses photoresist instead of adhesive in temporary bonding of wafers, bonds the wafer and the protective wafer together, obtains a temporary bonding body, and realizes temporary bonding of the wafer and the protective wafer.

[0049] It should be noted that the temporary bonding body can facilitate the thinning, etching or thickening of the wafer. For example, the thickness of the three-dimensional chip obtained by bonding the wafer to the wafer is usually not too thick, so as to facilitate the thinning of the three-dimensional chip. However, in the process of preparing components or connecting circuits on the circuit side of the monolithic wafer, in order to reduce wafer damage, the wafer needs to maintain its original thickness. After the components and connecting circuits on the circuit side of the wafer are prepared, the monolithic wafer can be thinned before the bonding process of the three-dimensional chip. The thinning process can be silicon etching on the side of the silicon substrate of the wafer away from the circuit side, and the wafer is thinned by etching the silicon substrate. In the process of thinning and etching, it is easy to damage the components or connecting circuits on the circuit side of the wafer, so it is necessary to temporarily protect the circuit side of the wafer, that is, to use the temporary bonding body obtained by temporarily bonding the protective wafer to the wafer, and put the temporary bonding body into the thinning process. During the thinning process, the protective wafer protects the circuit side of the wafer (also the bonding surface) to prevent the components and connecting lines on the circuit side of the wafer from being damaged during the thinning process. Photoresist usually has a certain degree of viscosity and can bond the wafer and the protective wafer. In the process of debonding, the photoresist can be removed by developing with a developer, and it is not easy to produce photoresist residue.

[0050] It should be noted that the temporary bonding of existing wafers usually uses adhesive, which bonds the wafer and the protective wafer together. In the debonding process, the wafer and the protective wafer are separated by heat melting and photolysis to achieve debonding. Specifically, the temporary bonded body obtained by temporary bonding is irradiated with a mercury lamp, and the heat energy of the mercury lamp can melt the adhesive, which is convenient for separating the wafer and the protective wafer. After the wafer is separated from the protective wafer, the adhesive on the surface of the wafer and the adhesive on the surface of the protective wafer can be removed by cleaning. However, it is usually difficult to remove the adhesive completely by using a hot melt method to initially melt the adhesive and then cleaning it, and there will be adhesive residues. The adhesive remaining on the circuit side of the wafer will affect the performance of components or connecting circuits.

[0051] In view of the above problems, the wafer temporary bonding method provided in the embodiment of the present application, by utilizing photoresist, the bonding surface of the wafer is bonded to the bonding surface of the protection wafer, and a temporary bonding body is obtained. The protection wafer and the wafer are bonded together by utilizing the viscosity of the photoresist to obtain a temporary bonding body, and the protection wafer in the temporary bonding body plays a role of temporary protection for the wafer. In the debonding process, the light-sensitive performance of the photoresist can be utilized to expose and develop, so that the protection wafer is separated from the wafer, and the photoresist is removed. The dissolution of the photoresist by the developer can ensure the removal effect of the photoresist, and it is not easy to produce photoresist residues, which can solve the problem of adhesive residues in the existing temporary bonding method and the debonding method, and avoid the adhesive residues affecting the performance of components and circuits on the wafer.

[0052] In some implementations, step S100 may include:

[0053] The bonding surface of the wafer rotating at the first set speed is scanned and cleaned by using a cleaning liquid. Exemplarily, the cleaning liquid may include RRC (propylene glycol methyl ether acetate), the wafer is rotated at the first set speed, and the bonding surface in rotation is sprayed and cleaned by using a cleaning liquid nozzle. The rotation of the wafer can increase the relative speed between the bonding surface of the wafer and the cleaning liquid, which can enhance the cleaning effect and clean the bonding surface of the wafer.

[0054] as well as,

[0055] The bonding surface of the protective wafer rotating at the second set speed is scanned and cleaned by using a cleaning liquid. The bonding surface of the protective wafer can be cleaned in the same manner as the bonding surface of the wafer, and the first set speed can be the same as or different from the second set speed. The first set speed and the second set speed can be set according to actual process requirements, and are not specifically limited in the embodiments of the present application.

[0056] The wafer temporary bonding method provided in the embodiment of the present application uses a cleaning liquid to perform scanning cleaning on the rotating wafer and the protective wafer, which can clean away foreign matter or impurity particles on the bonding surface of the wafer and the bonding surface of the protective wafer, thereby protecting the components and circuits on the bonding surface of the wafer and preventing foreign matter from damaging the bonding surface during the temporary bonding process.

[0057] In some implementations, step S100 may further include:

[0058] The bonding surface of the cleaned wafer and / or the bonding surface of the protective wafer are subjected to surface hydrophobicity treatment. Since the photoresist belongs to organic matter, which is usually a hydrophobic material, the bonding surface of the wafer and the bonding surface of the protective wafer have a certain hydrophilicity, and corresponding hydrophobic treatment is required to make the bonding surface of the wafer and the photoresist adhere better together, and the bonding surface of the protective wafer and the photoresist adhere better together, enhance the adhesion of the photoresist, and then enhance the bonding stability of the temporary bonded body, and it is not easy for the wafer or the wafer to be peeled off, resulting in the failure of the temporary bonded body. The hydrophobic treatment can be understood as an adhesion treatment, which is used to improve the adhesion.

[0059] In some embodiments, the bonding surface of the cleaned wafer and / or the bonding surface of the protective wafer is subjected to surface hydrophobicity treatment, including:

[0060] In a set temperature environment, hexamethyldisilazane is sprayed on the bonding surface of the wafer, and / or hexamethyldisilazane is sprayed on the bonding surface of the protective wafer. Exemplarily, the hydrophobic treatment can be performed in an environment where the chamber temperature rises to about 120° C., that is, the temperature is set to 120° C., HMDS (hexamethyldisilazane) is sprayed on the bonding surface of the wafer, and hexamethyldisilazane is sprayed on the bonding surface of the protective wafer synchronously or asynchronously.

[0061] The wafer and / or protective wafer sprayed with hexamethyldisilazane is cooled to room temperature. The cooling can be performed on a cold plate. If the photoresist is coated on the bonding surface of the wafer, only the bonding surface of the wafer can be hydrophobicized. If the photoresist is coated on the bonding surface of the protective wafer, the bonding surface of the protective wafer can also be hydrophobicized. Both can also be hydrophobicized. The embodiments of the present application are not specifically limited.

[0062] The wafer temporary bonding method provided in the embodiment of the present application can enhance the adhesion of the photoresist by performing hydrophobic treatment on the bonding surface of the wafer and / or the protective wafer, thereby enhancing the bonding stability of the temporary bonding body, and is less likely to cause the wafer or chip to peel off, resulting in failure of the temporary bonding body. The hydrophobic treatment can be understood as an adhesion treatment, which is used to improve the adhesion.

[0063] In some implementations, step S200 may include:

[0064] The bonding surface of the wafer or the bonding surface of the protective wafer is coated with photoresist. The photoresist can be coated on the bonding surface of the wafer or on the bonding surface of the protective wafer, which is not specifically limited in the embodiments of the present application. For example, the thickness of the photoresist can be 50 μm, and the photoresist can be a photoresist material with a photoresist model of Merck AZ40 XT.

[0065] The wafer or protective wafer coated with the photoresist is pre-baked. The function of the pre-baking is to pre-cure the photoresist. The pre-baking temperature can be about 125° C. and the time can be 60 seconds. The pre-baking can be performed on a hot plate.

[0066] The bonding surface of the wafer is bonded to the bonding surface of the protective wafer through photoresist to obtain a temporary bonding body.

[0067] In some implementations, before step S200, the following steps may also be included:

[0068] The bonding surface of the protective wafer is sprayed, and the spraying process is stopped when the spraying solution of the spraying process completely covers the bonding surface of the protective wafer. The spraying solution of the spraying process can be a photoresist, and exemplary, it can be EBR7030 (a type of photoresist solution). When the photoresist is coated on the bonding surface of the wafer, the bonding surface of the protective wafer can be sprayed, and the spraying solution adopts a photoresist solution, which can strengthen the adhesion between the bonding surface of the protective wafer and the photoresist. When the spraying solution completely covers the bonding surface of the protective wafer, the spraying process can be stopped.

[0069] Step S200 may include:

[0070] The bonding surface of the spray-treated protective wafer is bonded to the bonding surface of the wafer coated with photoresist to obtain a bonded body. In the bonding process of the bonding surface of the protective wafer and the bonding surface of the wafer, the protective wafer and the wafer need to be aligned first. The alignment notch marks of the wafer and the protective wafer can be used for mechanical alignment. The alignment process can be completed automatically. During the alignment process, the bonding surface of the protective wafer and the bonding surface of the wafer are placed relative to each other. After the alignment is completed, an external force can be applied to the protective wafer to bond the protective wafer to the wafer to obtain a bonded body.

[0071] The bonded body is post-baked to obtain a temporary bonded body. Exemplarily, the bonded body can be placed in a metal crystal boat, which can be used to carry wafers, chips or bonded bodies, etc. The metal crystal boat carries the bonded body into an oven for baking. The baking temperature range can be 70-150°C, and the time range is 1min-20min. After the post-baking is completed, the temporary bonded body is placed in an air environment to cool. Post-baking can make the photoresist completely cured. The cured photoresist can bond the protective chip and the wafer more firmly together.

[0072] In some embodiments, before pre-baking the wafer coated with the photoresist or the protective wafer, the method further comprises:

[0073] The edge washing treatment is performed on the wafer or protective wafer coated with photoresist. During the process of coating photoresist, some photoresist will overflow from the edge of the wafer or protective wafer. This overflowed part of the photoresist overlaps the edge and is easy to fall off and cause foreign matter contamination, so as to avoid flowing to the components and damaging the components. The width of the photoresist treated with edge washing can be 3μm. The edge washing treatment can use a photoresist solution to clean the edge of the wafer or protective wafer coated with photoresist, remove the overflowed photoresist from the edge, and make the edge more regular and smooth.

[0074] According to a second aspect of an embodiment of the present application, a method for debonding a wafer temporarily bonded is provided. Figure 2 A schematic flow chart of a wafer temporary bonding debonding method provided in an embodiment of the present application. Figure 2As shown, the debonding method of temporary wafer bonding provided in the embodiment of the present application includes:

[0075] S300: Expose the temporary bonded body obtained according to the wafer temporary bonding method as described in the first aspect. The temporary bonded body obtained according to the wafer temporary bonding method as described in the first aspect is usually subjected to other process treatments such as thinning or etching. After the treatment is completed, the protective wafer needs to be separated from the wafer, that is, debonding. Since photoresist is used in the temporary bonding method, the photoresist needs to be exposed during the debonding process. The exposed light can penetrate the protective wafer to reach the photoresist. The photoresist will undergo property changes after being irradiated with light, and the irradiated photoresist can be dissolved in the developer. The exposure amount and exposure time of the exposure can be determined according to the actual thickness and material of the photoresist. In addition, after exposure, nitrogen groups will be decomposed in the photoresist to generate nitrogen gas, and the gas is usually generated from the photoresist in the form of bubbles.

[0076] S400: Apply shear force to the temporarily bonded wafer and the protective wafer after exposure respectively, so as to separate the temporarily bonded wafer and the protective wafer. After bubbles are generated in the photoresist, shear force is applied to the wafer and the protective wafer respectively, and the wafer and the protective wafer can be separated under the expansion of the bubbles.

[0077] S500: Using a developer, the photoresist on the bonding surface of the separated wafer and the photoresist on the bonding surface of the protective wafer are developed. The development process can dissolve the photoresist on the wafer and the protective wafer. The photoresist development method is not easy to form residual glue, and will not cause damage to the components or connecting lines on the wafer.

[0078] The debonding method of the temporary bonding of the wafer provided in the embodiment of the present application uses photoresist to bond the bonding surface of the wafer to the bonding surface of the protective wafer to obtain a temporary bonding body. In the debonding process, the light-sensitive properties of the photoresist can be used to perform exposure and development to separate the protective wafer from the wafer and remove the photoresist. The dissolution of the photoresist by the developer can ensure the removal effect of the photoresist, and it is not easy to produce photoresist residues. It can solve the problem of adhesive residues in the existing temporary bonding method and debonding method, and avoid the adhesive residues affecting the performance of components and circuits on the wafer.

[0079] In some implementations, step S300 may include:

[0080] On the side of the temporary bonding body close to the protective wafer, ultraviolet light is irradiated to the protective wafer to expose the temporary bonding body. The exposure process can be to irradiate the light on the protective wafer in a direction perpendicular to the protective wafer, and the light passes through the protective wafer to irradiate the photoresist, which can avoid light damage to the components of the wafer.

[0081] In some implementations, step S300 may include:

[0082] The temporary bonded body is exposed according to a first set time. The first set time as the exposure time can be set based on experience.

[0083] After the exposure is completed, check whether the photoresist generates bubbles. When a quartz plate is used to protect the silicon wafer, the bubbles generated by the photoresist can be observed through the quartz plate because the quartz plate is light-transmissive. The bubbles can be detected using a pattern acquisition device, and the amount of bubbles that meet the requirements can be determined based on experience.

[0084] In response to the photoresist not generating bubbles, the temporary bonding body is exposed for a second set time. If no bubbles are detected, the temporary bonding body can continue to be exposed for a second set time until bubbles are detected and the amount of bubbles meets the requirement.

[0085] For example, Figure 3 A schematic state diagram of a temporary bonding body of a wafer temporary bonding debonding method provided in an embodiment of the present application. Figure 3 As shown, the exposure may be performed by ultraviolet light UV, and the photoresist is ultraviolet sensitive glue. The ultraviolet light UV irradiates the photoresist 800 through the quartz plate 600, and the wafer 700 turns away from the ultraviolet light UV until bubbles are generated in the photoresist, and a shear force F is applied to the wafer 700 and the quartz plate 600 respectively. Under the expansion of the bubbles and the shear force, the wafer 700 and the quartz plate 600 are separated.

[0086] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

[0087] Although the preferred embodiments of this specification have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of this specification.

[0088] Obviously, those skilled in the art can make various changes and modifications to this specification without departing from the spirit and scope of this specification. Thus, if these modifications and variations of this specification fall within the scope of the claims of this specification and their equivalents, this specification is also intended to include these modifications and variations.

Claims

1. A method for temporary wafer bonding and debonding, characterized in that: include: performing surface treatment on the bonding surface of the wafer and the bonding surface of the protective wafer respectively; Using photoresist, laminating the bonding surface of the wafer with the bonding surface of the protective wafer to obtain a temporary bonding body; The method of using photoresist to bond the bonding surface of the wafer to the bonding surface of the protective wafer to obtain a temporary bonding body includes: Coating a photoresist on the bonding surface of the wafer or the bonding surface of the protective wafer; Pre-baking the wafer or the protective wafer coated with the photoresist, wherein the pre-baking temperature is 125° C.; Performing a spray treatment on the bonding surface of the protective wafer, and stopping when the spray solution of the spray treatment completely covers the bonding surface of the protective wafer; By means of the photoresist, the bonding surface of the wafer is bonded to the bonding surface of the protective wafer to obtain a temporary bonding body; The bonding surface of the wafer is bonded to the bonding surface of the protective wafer by the photoresist to obtain a temporary bonding body, including: Laminating the bonding surface of the spray-treated protective wafer with the bonding surface of the wafer coated with the photoresist to obtain a laminated body; Post-baking the bonded body to obtain the temporary bonded body, wherein the baking temperature ranges from 70 to 150° C. and the time ranges from 1 min to 20 min; exposing the temporary bonding body; Applying shear force to the exposed wafer of the temporary bonding body and the protective wafer respectively, so as to separate the wafer of the temporary bonding body and the protective wafer; Using a developer, developing the photoresist on the bonding surface of the separated wafer and the photoresist on the bonding surface of the protective wafer respectively; The exposing the temporary bonding body comprises: exposing the temporary bonding body according to a first set time; After the exposure is completed, checking whether the photoresist generates bubbles; In response to no bubbles being generated in the photoresist, the temporary bonding body is exposed for a second set time.

2. The method for temporary wafer bonding and debonding according to claim 1, characterized in that: The step of performing surface treatment on the bonding surface of the wafer and the bonding surface of the protective wafer respectively comprises: Using a cleaning liquid, scanningly cleaning the bonding surface of the wafer rotating at a first set speed; and, The bonding surface of the protection wafer rotating at a second set speed is scan-cleaned by using the cleaning liquid.

3. The method for temporary wafer bonding and debonding according to claim 2, characterized in that: The step of performing surface treatment on the bonding surface of the wafer and the bonding surface of the protective wafer respectively further includes: The bonding surface of the cleaned wafer and / or the bonding surface of the protective wafer is / are subjected to surface hydrophobicity treatment.

4. The method for temporary wafer bonding and debonding according to claim 3, characterized in that: The step of performing surface hydrophobic treatment on the bonding surface of the cleaned wafer and / or the bonding surface of the protective wafer comprises: In a set temperature environment, spraying hexamethyldisilazane onto the bonding surface of the wafer, and / or spraying hexamethyldisilazane onto the bonding surface of the protective wafer; The wafer and / or the protective wafer after spraying hexamethyldisilazane is cooled to room temperature.

5. The method for temporary wafer bonding and debonding according to claim 1, characterized in that: Before pre-baking the wafer or the protective wafer coated with the photoresist, the method further comprises: The wafer or the protective wafer coated with the photoresist is subjected to edge cleaning treatment.

6. The method for temporary wafer bonding and debonding according to claim 1, characterized in that: The exposing the temporary bonding body comprises: On a side of the temporary bonding body close to the protective wafer, ultraviolet light is irradiated toward the protective wafer to expose the temporary bonding body.

Images