Phase shift unit and manufacturing method thereof, phase shifter, and antenna

Abstract

The present invention discloses a phase shift unit and a manufacturing method thereof, a phase shifter, and an antenna. The phase shift unit includes: a first substrate; a microstrip line; a light-emitting device layer, wherein the microstrip line and the light-emitting device layer are arranged on the same side of the first substrate; a light-control dielectric layer, located on the side of the microstrip line and the light-emitting device layer away from the first substrate; and a ground layer, located on the side of the light-control dielectric layer away from the first substrate, wherein the dielectric constant of the light-control dielectric layer can change with the light-emitting state of the light-emitting device layer. The phase shift unit according to an embodiment of the present invention can be used to form a phase shifter of an antenna, thereby replacing a mechanical structure to control the beam scanning direction, with a simpler structure, thereby reducing the manufacturing cost of the phase shifter and the antenna.

Description

Technical Field

[0001] The present invention relates to the field of antennas, and in particular to a phase shifting unit and a manufacturing method thereof, a phase shifter and an antenna. Background Art

[0002] Antennas are radio-related components used to transmit or receive electromagnetic waves. Engineering systems such as radio communications, broadcasting, television, radar, navigation, remote sensing, and astronomy, which use electromagnetic waves to transmit information, mostly rely on antennas to work.

[0003] The current antenna is a mechanical scanning antenna, which is a mechanical structure used to control the scanning direction of the beam. It is large in size and has a high manufacturing cost. Summary of the invention

[0004] The present invention provides a phase shift unit and a manufacturing method thereof, a phase shifter and an antenna, which reduce the manufacturing cost of the phase shifter and the antenna including the phase shifter.

[0005] In a first aspect, an embodiment of the present invention provides a phase shift unit, comprising: a first substrate; a microstrip line; a light-emitting device layer, wherein the microstrip line and the light-emitting device layer are arranged on the same side of the first substrate; a light-control dielectric layer, located on a side of the microstrip line and the light-emitting device layer away from the first substrate; and a ground layer, located on a side of the light-control dielectric layer away from the first substrate, wherein the dielectric constant of the light-control dielectric layer can change with the light-emitting state of the light-emitting device layer.

[0006] In a second aspect, an embodiment of the present invention provides a method for manufacturing a phase shift unit, comprising: forming a microstrip line and a light-emitting device layer on the same side of a first substrate to obtain a first substrate assembly; forming a ground layer on a second substrate; forming a light-control dielectric layer on a side of the ground layer away from the second substrate to obtain a second substrate assembly; combining the first substrate assembly with the second substrate assembly, wherein the light-control dielectric layer is located between the ground layer and the microstrip line, and the dielectric constant of the light-control dielectric layer can change with the light-emitting state of the light-emitting device layer.

[0007] In a third aspect, an embodiment of the present invention provides a method for manufacturing a phase shift unit, comprising: forming a microstrip line and a light-emitting device layer on the same side of a first substrate; forming a light-control dielectric layer on a side of the microstrip line and the light-emitting device layer away from the first substrate, wherein the dielectric constant of the light-control dielectric layer can change with the light-emitting state of the light-emitting device layer; forming a second planarization layer on the first substrate, the second planarization layer surrounding the circumference of the light-control dielectric layer; forming a grounding layer on the side of the light-control dielectric layer and the second planarization layer away from the first substrate.

[0008] In a fourth aspect, an embodiment of the present invention provides a phase shifter, comprising a plurality of phase shifting units according to any one of the implementations of the first aspect of the present invention, wherein the plurality of phase shifting units are arranged in an array.

[0009] In a fifth aspect, an embodiment of the present invention provides an antenna, comprising: a phase shifter according to any implementation of the fourth aspect of the present invention; and a plurality of radiators, the plurality of radiators being arranged in an array, each radiator being coupled to a corresponding phase shifting unit of the phase shifter.

[0010] The phase shift unit according to the embodiment of the present invention can be used to form a phase shifter of an antenna, thereby replacing a mechanical structure to control the beam scanning direction. The phase shift unit includes a light-controlled dielectric layer, a microstrip line and a light-emitting device layer are arranged on the same side of the first substrate, a ground layer is located on the side of the light-controlled dielectric layer away from the first substrate, and the antenna signal propagates between the microstrip line and the ground layer. When the light-emitting state of the light-emitting device layer changes, the dielectric constant of the light-controlled dielectric layer can change with the light-emitting state of the light-emitting device layer. At this time, the antenna signal propagates in the light-controlled dielectric layer between the microstrip line and the ground layer, and the phase of the antenna signal changes, thereby realizing the phase shift function. The traditional mechanical structure for controlling the beam scanning direction is large in size and has a high manufacturing cost. The phase shift unit of the embodiment of the present invention uses a thinner light-controlled dielectric layer as a phase-controlled medium, so that the overall thickness of the phase shift unit is thinner, and the phase shift unit and the phase shifter are made thinner. The structure of the phase shift unit is simpler, which reduces the manufacturing cost of the phase shifter and the antenna, and reduces power consumption. In addition, in the phase shift unit of the embodiment of the present invention, the phase control medium is a thin film structure and can be manufactured using a thin film process. Compared with the liquid crystal phase shift unit, there is no need to consider the uniformity of the thickness of the liquid crystal box. The uniformity of the phase control medium is better, the phase shifting accuracy is higher, and the structure is simpler, thereby reducing the manufacturing cost of the phase shifter and the antenna. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Other features, objects and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, in which the same or similar reference numerals represent the same or similar features and the accompanying drawings are not drawn to scale.

[0012] Figure 1 is a schematic top view of a phase shift unit provided according to an embodiment of the present invention;

[0013] Figure 2 is a cross-sectional schematic diagram of a phase shift unit provided according to an embodiment of the present invention;

[0014] Figure 3 is a schematic top view of a phase shift unit provided according to another embodiment of the present invention;

[0015] Figure 4 is a schematic top view of a phase shift unit provided according to another embodiment of the present invention;

[0016] Figure 5 is a schematic top view of a phase shift unit provided according to another embodiment of the present invention;

[0017] Figure 6 is a cross-sectional schematic diagram of a phase shift unit provided according to yet another embodiment of the present invention;

[0018] Figure 7 is a cross-sectional schematic diagram of a phase shift unit provided according to yet another embodiment of the present invention;

[0019] Figure 8 is a schematic top view of a phase shift unit provided according to another embodiment of the present invention;

[0020] Fig. 9 is a cross-sectional schematic diagram of a phase shift unit provided according to yet another embodiment of the present invention;

[0021] Fig.10 yes Figure 8 A partial enlarged schematic diagram of the middle Q1 region;

[0022] Fig.11 is a circuit diagram of a driving circuit unit provided according to an embodiment of the present invention;

[0023] Fig.12 is a schematic top view of a phase shift unit provided according to another embodiment of the present invention;

[0024] Fig.13 is a cross-sectional schematic diagram of a phase shift unit provided according to yet another embodiment of the present invention;

[0025] Fig.14 is a cross-sectional schematic diagram of a phase shift unit provided according to yet another embodiment of the present invention;

[0026] Fig.15 is a cross-sectional schematic diagram of a phase shift unit provided according to yet another embodiment of the present invention;

[0027] Fig.16 is a cross-sectional schematic diagram of a phase shift unit provided according to yet another embodiment of the present invention;

[0028] Fig.17 is a cross-sectional schematic diagram of a phase shift unit provided according to yet another embodiment of the present invention;

[0029] Fig.18 is a flow chart of a method for manufacturing a phase shift unit according to an embodiment of the present invention;

[0030] Fig.19 is a cross-sectional schematic diagram of a phase shift unit manufactured according to a method for manufacturing a phase shift unit provided in an embodiment of the present invention;

[0031] Fig. 20 is a flow chart of a method for manufacturing a phase shift unit according to another embodiment of the present invention;

[0032] Fig.21 is a cross-sectional schematic diagram of a phase shift unit manufactured according to a method for manufacturing a phase shift unit provided in another embodiment of the present invention;

[0033] Fig. 22 is a flow chart of a method for manufacturing a phase shift unit according to another embodiment of the present invention;

[0034] Fig.23 is a cross-sectional schematic diagram of a phase shift unit manufactured according to a method for manufacturing a phase shift unit provided in yet another embodiment of the present invention;

[0035] Fig.24 is a schematic top view of a phase shifter provided according to an embodiment of the present invention;

[0036] Fig.25 It is a schematic top view of an antenna provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0037] The features and exemplary embodiments of various aspects of the present invention will be described in detail below. In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain the present invention and are not configured to limit the present invention. For those skilled in the art, the present invention can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present invention by illustrating examples of the present invention.

[0038] It should be noted that, in this document, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0039] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean that it is directly on the other layer or another region, or that other layers or regions are included between it and the other layer or another region. Moreover, if the component is turned over, the layer or a region will be "below" or "beneath" another layer or another region.

[0040] The embodiment of the present invention provides a phase shift unit 100. Figure 1 , Figure 2The above diagram and the cross-sectional diagram are respectively a schematic diagram of a phase shift unit provided according to an embodiment of the present invention. The phase shift unit 100 can be coupled with a radiator 200, and the phase shift unit 100 can change the phase of the antenna signal transmitted to the radiator. The phase shift unit 100 includes a first substrate 111, a microstrip line 120, a light emitting device layer 130, a light control dielectric layer 140 and a ground layer 150.

[0041] The first substrate 111 is, for example, a glass substrate. In other embodiments, the first substrate 111 may also be a substrate of other insulating materials. The microstrip line 120 is a conductor material, for example, a metal line. The light emitting device layer 130 can emit light. The microstrip line 120 and the light emitting device layer 130 are disposed on the same side of the first substrate 111.

[0042] The light control dielectric layer 140 is located on the side of the microstrip line 120 and the light emitting device layer 130 away from the first substrate 111. The ground layer 150 is a conductor material, such as a metal layer. The ground layer 150 is located on the side of the light control dielectric layer 140 away from the first substrate 111. The dielectric constant of the light control dielectric layer 140 can change with the light emitting state of the light emitting device layer 130.

[0043] The phase shift unit 100 according to the embodiment of the present invention can form a phase shifter of the antenna, thereby replacing the mechanical structure to control the beam scanning direction. The phase shift unit 100 includes a light control dielectric layer 140, a microstrip line 120 and a light emitting device layer 130 are arranged on the same side of the first substrate 111, and a ground layer 150 is located on the side of the light control dielectric layer 140 away from the first substrate 111. The antenna signal propagates between the microstrip line 120 and the ground layer 150. Figure 2 The dotted line WS schematically shows the propagation path of the antenna signal in the phase shift unit 100. The antenna signal is a wave signal, and when it passes through the microstrip line 120, the phase is in is the phase, β is the phase constant, ε r is the dielectric constant, and l is the length of the microstrip line 120. When the light-emitting state of the light-emitting device layer 130 changes, the dielectric constant of the light-control dielectric layer 140 can change with the light-emitting state of the light-emitting device layer 130. At this time, the antenna signal propagates in the light-control dielectric layer 140 between the microstrip line 120 and the ground layer 150, and the antenna signal generates a phase difference. That is, the phase of the antenna signal changes, realizing the phase shifting function. The traditional mechanical structure for controlling the beam scanning direction is large in size and has a high manufacturing cost. The phase shift unit 100 of the embodiment of the present invention adopts a thinner optical control dielectric layer 140 as the phase control medium, so that the overall thickness of the phase shift unit 100 is thinner, and the phase shift unit 100 and the phase shifter are made lighter and thinner. The structure of the phase shift unit 100 is simpler, which reduces the manufacturing cost of the phase shifter and the antenna, and reduces power consumption. In addition, in the phase shift unit 100 of the embodiment of the present invention, the phase control medium is a thin film structure, which can be made by a thin film process. Compared with the liquid crystal phase shift unit, there is no need to consider the uniformity of the box thickness of the liquid crystal box. The uniformity of the phase control medium is better and the phase shifting accuracy is higher.

[0044] like Figure 2 In some embodiments, the phase shift unit 100 further includes a second substrate 112 . The second substrate 112 is, for example, a glass substrate. The second substrate 112 is located on a side of the ground layer 150 away from the first substrate 111 .

[0045] Optionally, the phase shift unit 100 further includes a feed line 190, which is disposed on a side of the second substrate 112 away from the ground layer 150, and the orthographic projection of the feed line 190 on the second substrate 112 overlaps with the orthographic projection of the microstrip line 120 on the second substrate 112. Optionally, the feed line 190 and the radiator 200 are located on the same side of the second substrate 112, and the feed line 190 and the ground layer 150 are located on different sides of the second substrate 112. Optionally, the side of the ground layer 150 facing the microstrip line 120 is covered with a first insulating layer IS1. The ground layer 150 includes a first coupling hole H1, and the orthographic projection of the radiator 200 on the ground layer 150 covers the first coupling hole H1. The antenna signal transmitted between the microstrip line 120 and the ground layer 150 can be transmitted to the radiator 200 through the first coupling hole H1. The ground layer 150 includes a second coupling hole H2, and the orthographic projection of the feed line 190 on the ground layer 150 covers the second coupling hole H2. The antenna signal in the feeding line 190 can be transmitted to the microstrip line 120 through the second coupling hole H2.

[0046] like Figure 2In some embodiments, the light emitting device layer 130 includes at least one light emitting element PX. The phase shift unit 100 further includes a light emitting signal line 160. The light emitting signal line 160 is disposed on the first substrate 111, and the light emitting signal line 160 is electrically connected to the light emitting device layer 130. The light emitting signal line 160 is used to transmit a signal for controlling the light emitting state of the light emitting device layer 130. For example, the light emitting device layer 130 includes a light emitting element PX, and the light emitting signal line 160 is used to transmit a signal for controlling the light emitting brightness of the light emitting device layer 130, and the dielectric constant of the light control dielectric layer 140 can change with the light emitting brightness of the light emitting device layer 130 or the light emitting element PX. In the above exemplary embodiments, the light emitting brightness of the light emitting device layer 130 is controlled by the light emitting signal line 160, and then the dielectric constant of the light control dielectric layer 140 is controlled, so that the phase change of the antenna signal is controlled by the brightness change of the light emitting device layer 130. The phase change is controlled by the electrical signal, so as to control the main lobe direction of the radiation beam. Compared with the traditional mechanical structure for controlling the beam scanning direction, the speed of controlling the phase shift by electrical signals is faster and the control accuracy of the radiation beam direction is higher.

[0047] When the dielectric constant of the light-control dielectric layer 140 can change with the light-emitting brightness of the light-emitting device layer 130 or the light-emitting element PX, the light-control dielectric layer 140 is a light-intensity-sensitive light-control dielectric layer, for example, the light-control dielectric layer 140 is a liquid crystal film doped with nanoparticles. In the liquid crystal film doped with nanoparticles, the nanoparticles are heated by light to cause a phase change of the liquid crystal, thereby changing the dielectric constant.

[0048] In some embodiments, the light-emitting device layer 130 includes a first electrode layer 131, a light-emitting layer 132, and a second electrode layer 133, which are sequentially arranged from the first substrate 111 to the light-control dielectric layer 140, wherein the second electrode layer 133 is a light-transmitting conductive layer. In this embodiment, the light-emitting element PX included in the light-emitting device layer 130 is an organic light-emitting diode (OLED) as an example for explanation, and the light-emitting layer 132 is an organic light-emitting layer. The first electrode layer 131 is, for example, an anode layer of the light-emitting device layer 130, and the second electrode layer 133 is, for example, a cathode layer. Optionally, the first electrode layer 131 includes a metal layer, and the second electrode layer 133 is, for example, an indium tin oxide (ITO) layer. Of course, the second electrode layer 133 may also be other light-transmitting conductive layers. In some other embodiments, the light-emitting element PX may also be other light-emitting elements such as a light-emitting diode (LED). Using OLED and LED as the light emitting element PX makes the light emitting device layer 130 thinner, thereby reducing the overall thickness of the phase shift unit 100, and further facilitating the thinning of the phase shift unit 100 and the antenna including the phase shift unit 100.

[0049] Optionally, the microstrip line 120 and the first electrode layer 131 are at least partially multiplexed with each other, that is, at least part of the microstrip line 120 is located on the side of the light-emitting layer 132 away from the light-control dielectric layer 140, and the microstrip line 120 is electrically connected to the light-emitting signal line 160, so that the microstrip line 120 can receive a signal that controls the light-emitting state of the light-emitting device layer 130. The microstrip line 120 is used to transmit antenna signals and serves as an electrode of the light-emitting element PX. In the direction perpendicular to the first substrate 111, the light-emitting state of the light-emitting layer 132 overlapping with the microstrip line 120 is controlled by the signal in the microstrip line 120, and is roughly irradiated toward the light-control dielectric layer 140 in the direction perpendicular to the first substrate 111, thereby affecting the dielectric constant of the corresponding area of ​​the light-control dielectric layer 140. By multiplexing the microstrip line 120 and the first electrode layer 131, the area where the dielectric constant changes corresponds more accurately to the area where the microstrip line 120 is located, thereby improving the accuracy of the phase transformation of the antenna signal.

[0050] Although the microstrip line 120 and the first electrode layer 131 are at least partially multiplexed with each other in the above embodiment, this is not necessary.

[0051] Figure 3 1 is a schematic top view of a phase shift unit provided according to another embodiment of the present invention. In some embodiments, the microstrip line 120 and the first electrode layer 131 may not be reused. Optionally, the microstrip line 120 is spiral-shaped, the first electrode layer 131 is spiral-shaped, and the first electrode layer 131 and the microstrip line 120 are arranged in a mutually nested structure with intervals. The shape of the microstrip line 120 and the shape of the first electrode layer 131 may not be limited to a spiral shape, but may also be other shapes. For example, in some other embodiments, the microstrip line 120 is snake-shaped, the first electrode layer 131 is snake-shaped, and the first electrode layer 131 and the microstrip line 120 are arranged in a mutually nested structure with intervals. The first electrode layer 131 and the microstrip line 120 have substantially the same shape and are nested with each other, so that the distance between the two is always close. The light emitted by the light-emitting layer 132 controlled by the first electrode layer 131 can change the dielectric constant of the light-control dielectric layer 140 in the corresponding area of ​​the microstrip line 120 after a certain scattering, thereby achieving precise phase shifting.

[0052] In the above-mentioned embodiment, the light-emitting layer 132 is in a block shape, such as a rectangular or square shape. In other embodiments, the shapes of the light-emitting layer 132 and the second electrode layer 133 are not limited to the above-mentioned examples.

[0053] Figure 41 is a top view schematic diagram of a phase shift unit provided according to another embodiment of the present invention. In this embodiment, the light-emitting layer 132 includes a solid portion 132a and a hollow portion 132b, and the orthographic projection of the solid portion 132a on the first substrate 111 overlaps with the orthographic projection of the first electrode layer 131 on the first substrate 111. For example, the microstrip line 120 and the first electrode layer 131 are multiplexed with each other, the first electrode layer 131 is spiral, and the solid portion 132a of the light-emitting layer 132 is also spiral.

[0054] In the above embodiments, the dielectric constant of the light-control dielectric layer 140 can change with the brightness of the received light, and the phase modulation of the antenna signal can be achieved by controlling the brightness of the light-emitting device layer 130. In some embodiments, the dielectric constant of the light-control dielectric layer 140 can change with the wavelength of the received light.

[0055] Figure 5 , Figure 6 1 and 2 are respectively a top view schematic diagram and a cross-sectional schematic diagram of a phase shift unit provided according to another embodiment of the present invention. Optionally, the light emitting device layer 130 includes a plurality of light emitting elements PX, the plurality of light emitting elements PX include at least two light emitting elements PX with different light emitting wavelengths, and the dielectric constant of the light control dielectric layer 140 can change with the wavelength of the received light. Figure 6 The dotted line WS schematically shows the propagation path of the antenna signal in the phase shift unit 100. When the light emission wavelength of the light emitting element PX is controlled to change, the dielectric constant of the light control dielectric layer 140 can change with the light emission wavelength of the light emitting device layer 130. At this time, the antenna signal propagates in the light control dielectric layer 140 between the microstrip line 120 and the ground layer 150, and the phase of the antenna signal changes, thereby realizing the phase shift function.

[0056] When the dielectric constant of the light-controlling dielectric layer 140 can change with the light emission wavelength of the light-emitting device layer 130 , the light-controlling dielectric layer 140 is a wavelength-sensitive light-controlling dielectric layer. For example, the light-controlling dielectric layer 140 is a thin film material doped with azo liquid crystal or azo chiral agent.

[0057] like Figure 5. Optionally, the at least two light-emitting elements PX include at least two of a red light-emitting element RP, an orange light-emitting element OP, a yellow light-emitting element YP, a green light-emitting element GP, a blue light-emitting element BP, and a purple light-emitting element PP. For example, in this embodiment, the at least two light-emitting elements PX include a red light-emitting element RP, an orange light-emitting element OP, a yellow light-emitting element YP, a green light-emitting element GP, a blue light-emitting element BP, and a purple light-emitting element PP. In some other embodiments, the at least two light-emitting elements PX may not be limited to light-emitting elements of the above colors. According to the sensitivity of the light-control dielectric layer 140 to the wavelength, the light-emitting elements PX may include light-emitting elements of other matching colors.

[0058] The light emitting element PX can be configured to have a smaller size. Optionally, the length and width of each light emitting element PX are both less than or equal to 50 microns, for example, both are 20 microns. By configuring the light emitting element PX with a smaller size, when the light emitting element PX emits light of a certain wavelength, in the case of light path scattering, the monochromatic light received by the light control dielectric layer 140 can be made uniform.

[0059] like Figure 5 In some embodiments, a plurality of light emitting elements PX are arranged in a preset arrangement structure, in which a preset repeating unit RU is arranged in an array in a plane parallel to the light control dielectric layer 140, and each preset repeating unit RU includes at least two light emitting elements PX arranged in an array. For example, in this embodiment, each preset repeating unit RU includes two rows of light emitting elements PX, the first row of light emitting elements PX are red light emitting elements RP, orange light emitting elements OP, and yellow light emitting elements YP in sequence, and the second row of light emitting elements PX are green light emitting elements GP, blue light emitting elements BP, and purple light emitting elements PP in sequence.

[0060] like Figure 6 Optionally, each light emitting element PX includes a first electrode EL1, a light emitting portion EM, and a second electrode EL2 sequentially arranged from the first substrate 111 to the light control dielectric layer 140, wherein the second electrode EL2 is a light-transmitting electrode. When the light emitting element PX is an OLED, the first electrode EL1 is, for example, an anode, the second electrode EL2 is, for example, a cathode, and the light emitting portion EM is an organic light emitting portion.

[0061] In some embodiments, the phase shift unit 100 further includes at least two light-emitting power supply lines 170, and the second electrodes EL2 of the plurality of light-emitting elements PX with the same light-emitting wavelength band are electrically connected to the same light-emitting power supply line 170. For example, the phase shift unit 100 includes six light-emitting power supply lines 170, a plurality of red light-emitting elements RP are electrically connected to one light-emitting power supply line 170, a plurality of orange light-emitting elements OP are electrically connected to another light-emitting power supply line 170, and the connection relationship between the yellow light-emitting element YP, the green light-emitting element GP, the blue light-emitting element BP, and the purple light-emitting element PP and the light-emitting power supply line 170 is similar. One power supply line 170 simultaneously supplies power to the plurality of light-emitting elements PX with the same light-emitting wavelength band, thereby simplifying the wiring structure of the phase shift unit 100, reducing the difficulty of patterning the wiring in the phase shift unit 100, and thus reducing the manufacturing cost of the phase shift unit 100.

[0062] In this embodiment, the light-emitting power supply line 170 is located on the side of the second electrode EL2 away from the first electrode EL1, and is electrically connected to the second electrode EL2 through a via, thereby solving the problem that the light-emitting power supply line 170 and the second electrode EL2 cannot be wired when they are in the same layer, and at the same time, it can reduce the shielding area of ​​the light-emitting power supply line 170 in the corresponding area of ​​the microstrip line 120, and reduce the interference of the light-emitting power supply line 170 to the antenna signal. Optionally, a second insulating layer IS2 is provided between the wiring layer where the light-emitting power supply line 170 is located and the layer where the first electrode EL1 is located.

[0063] In the above embodiment, the light emitting elements PX with different light emitting wavelengths emit different colors of light from their light emitting parts EM. For example, the light emitting part EM of the green light emitting element GP emits different colors from the light emitting part EM of the blue light emitting element BP.

[0064] The structure of each light emitting element PX may not be limited to the above example.

[0065] Figure 7 is a cross-sectional schematic diagram of a phase shift unit provided according to another embodiment of the present invention. In some embodiments, each light-emitting element PX further includes a color conversion portion CF, and the color conversion portion CF is located on the side of the second electrode EL2 facing the light-control dielectric layer 140, wherein the color emitted by the light-emitting portion EM of each light-emitting element PX is the same, and the color conversion portion CF of different light-emitting elements PX can convert the color emitted by the light-emitting portion EM into different colors. The color conversion portion CF is, for example, a color filter, or a photoluminescent film layer such as a quantum dot film. By providing the color conversion portion CF, the colorization of the light-emitting element PX can be achieved, so that light of different colors can be irradiated to the light-control dielectric layer 140.

[0066] Figure 8 , Fig. 91 and 2 are respectively a schematic top view and a schematic cross-sectional view of a phase shift unit provided according to another embodiment of the present invention. Optionally, the plurality of light-emitting elements PX include a plurality of first light-emitting elements PX1 on a preset track PT, and the first electrodes EL1 of the plurality of first light-emitting elements PX1 are interconnected in sequence and multiplexed into a microstrip line 120. For example, in this embodiment, the preset track PT is a spiral track. In some other embodiments, the preset track PT is a track of other shapes such as a snake-shaped track.

[0067] like Fig. 9 Optionally, the phase shift unit 100 further includes a driving layer AR, the driving layer AR is located between the light emitting device layer 130 and the first substrate 111, and the driving layer AR includes a plurality of driving circuit units DU. Figure 8 In some embodiments, the plurality of light emitting elements PX further include a plurality of second light emitting elements PX2 located outside the preset track, and the first electrode EL1 of each second light emitting element PX2 is electrically connected to a corresponding driving circuit unit DU.

[0068] Fig.10 yes Figure 8 A partial enlarged schematic diagram of the Q1 area in the middle. Fig.11 The phase shift unit 100 includes a light-emitting scan line SL1 and a light-emitting data line DL1, and the second light-emitting element PX2 is electrically connected to the light-emitting scan line SL1 and the light-emitting data line DL1 through the drive circuit unit DU. Fig.11 The example shows a structure of a driving circuit unit DU, which includes a switching transistor T1, a driving transistor T2 and a storage capacitor Cs. The first end of the switching transistor T1 is electrically connected to the light-emitting data line DL1, the second end of the switching transistor T1 is electrically connected to the control end of the driving transistor T2, and the control end of the switching transistor T1 is electrically connected to the light-emitting scanning line SL1. The first end of the driving transistor T2 is electrically connected to the power supply terminal VDD, and the second end of the driving transistor T2 is electrically connected to the second light-emitting element PX2. The first electrode of the storage capacitor Cs is electrically connected to the control end of the driving transistor T2, and the second electrode is electrically connected to a stable voltage source, for example, electrically connected to the power supply terminal VDD. In the above embodiment, the driving circuit unit DU is described as including two transistors and one capacitor. In some other embodiments, the driving circuit unit DU may include other numbers of transistors and capacitors.

[0069] Fig.121 is a top view schematic diagram of a phase shift unit provided according to another embodiment of the present invention. In some embodiments, the phase shift unit 100 further includes a scan line SL2, a feed data line DL2 and a switch element T3. The scan line SL2 is used to provide a selection signal. The first end of the switch element T3 is electrically connected to the feed data line DL2, the second end of the switch element T3 is electrically connected to the microstrip line 120, and the control end of the switch element T3 is electrically connected to the scan line SL2. When a plurality of phase shift units are arranged as a phase shifter, by adopting a scan drive, the number of drive lines of the phase shifter can be reduced, thereby facilitating the improvement of the resolution of the phase shifter and the antenna including the phase shifter.

[0070] like Fig. 9 In some embodiments, the phase shift unit 100 further includes a first planarization layer 181, and the orthographic projection of the first planarization layer 181 on the first substrate 111 surrounds the orthographic projection of the light emitting device layer 130 on the first substrate 111. The phase shift unit 100 may include a glue layer GL, and the glue layer GL adheres and bonds the light control dielectric layer 140 to the light emitting device layer 130 and the light control dielectric layer 140 to the first planarization layer 181, so as to achieve full bonding between the light control dielectric layer 140 and the light emitting device layer 130. However, the positional relationship between the light emitting device layer 130 and the light control dielectric layer 140 may not be limited to the above example.

[0071] Fig.13 is a cross-sectional schematic diagram of a phase shift unit provided according to another embodiment of the present invention. In some embodiments, the phase shift unit 100 further includes a first planarization layer 181, and the orthographic projection of the first planarization layer 181 on the first substrate 111 surrounds the orthographic projection of the light-emitting device layer 130 on the first substrate 111. In this embodiment, the phase shift unit 100 further includes a support member ST. The support member ST is, for example, a support such as foam. The support member ST is disposed between the first planarization layer 181 and the light-control dielectric layer 140, so that there is a spacing space between the light-control dielectric layer 140 and the light-emitting device layer 130, and the orthographic projection of the support member ST on the first substrate 111 is located on the outer peripheral side of the orthographic projection of the light-emitting device layer 130 on the first substrate 111. Optionally, air is filled between the light-control dielectric layer 140 and the light-emitting device layer 130. When the light-emitting device layer 130 includes at least two light-emitting elements PX with different light-emitting bands, the distance between the light-emitting device layer 130 and the light-control dielectric layer 140 can be increased by setting a support member ST, and color mixing is performed through the characteristic of light divergence during propagation, thereby improving the color mixing effect.

[0072] Fig.14: is a cross-sectional schematic diagram of a phase shift unit provided according to another embodiment of the present invention. The support member ST is arranged between the first planarization layer 181 and the light-control dielectric layer 140, so that there is a spacing space between the light-control dielectric layer 140 and the light-emitting device layer 130. Optionally, the support member ST includes an inner wall surface RS facing the spacing space, and the inner wall surface RS is a light reflecting surface. For example, the support member ST is made of a reflective material, and the inner wall surface RS is processed. The inner wall surface RS surrounds the light-emitting device layer 130. By setting the inner wall surface RS as a light reflecting surface, the light intensity loss of the light emitting device layer 130 irradiating the light-control dielectric layer 140 can be reduced, thereby improving the phase shift accuracy.

[0073] Fig.15 1 is a cross-sectional schematic diagram of a phase shift unit provided according to another embodiment of the present invention. In some embodiments, the phase shift unit 100 further includes a light scattering layer SAL, which is disposed between the light control dielectric layer 140 and the light emitting device layer 130. The light emitted by the light emitting device layer 130 passes through the light scattering layer SAL, undergoes a certain degree of light mixing, and then propagates into the light control dielectric layer 140. By providing the light scattering layer SAL, the light mixing can be made more uniform, thereby improving the effectiveness of the phase shift unit.

[0074] Fig.16 1 is a cross-sectional schematic diagram of a phase shift unit provided according to another embodiment of the present invention. Optionally, the phase shift unit 100 further includes a first light reflecting layer RL1, the first light reflecting layer RL1 surrounds at least a portion of the side wall of the light emitting device layer 130, and the first light reflecting layer RL1 is an insulating layer. The first light reflecting layer RL1 can reflect light, thereby preventing the light emitted by the light emitting device layer 130 from entering the first planarization layer 181 and being lost, so that more light is irradiated to the light control dielectric layer 140, thereby improving the light utilization rate of the light emitting device layer 130.

[0075] Fig.17 1 is a cross-sectional schematic diagram of a phase shift unit provided according to another embodiment of the present invention. Optionally, the phase shift unit 100 further includes a second light reflecting layer RL2, which is disposed on a side of the first substrate 111 away from the light emitting device layer 130, and the orthographic projection of the second light reflecting layer RL2 on the first substrate 111 at least partially overlaps with the orthographic projection of the light emitting device layer 130 on the first substrate 111. When the first planarization layer 181 is light-transmissive, part of the light emitted by the light emitting device layer 130 may shine toward the first substrate 111, and the second light reflecting layer RL2 can reflect this part of the light toward the light-control dielectric layer 140, thereby improving the light utilization rate of the light emitting device layer 130.

[0076] An embodiment of the present invention further provides a method for manufacturing a phase shift unit. The method for manufacturing the phase shift unit is, for example, a method for manufacturing the phase shift unit 100 according to any of the above embodiments.

[0077] Fig.18 is a flow chart of a method for manufacturing a phase shift unit according to an embodiment of the present invention. The method for manufacturing a phase shift unit includes steps S110 to S140. Fig.19 It is a cross-sectional schematic diagram of a phase shift unit manufactured according to a method for manufacturing a phase shift unit provided in an embodiment of the present invention.

[0078] In step S110 , a microstrip line 120 and a light emitting device layer 130 are formed on the same side of a first substrate 111 to obtain a first substrate assembly.

[0079] In step S120 , a ground layer 150 is formed on the second substrate 112 .

[0080] In step S130, a light control dielectric layer 140 is formed on the side of the ground layer 150 away from the second substrate 112 to obtain a second substrate assembly. Optionally, a first insulating layer IS1 may be formed between the ground layer 150 and the light control dielectric layer 140. Of course, in some embodiments, the first insulating layer IS1 may be omitted.

[0081] In step S140 , the first substrate assembly is combined with the second substrate assembly, wherein the light control dielectric layer 140 is located between the ground layer 150 and the microstrip line 120 , and the dielectric constant of the light control dielectric layer 140 can change with the light emitting state of the light emitting device layer 130 .

[0082] In some embodiments, when forming the second substrate assembly, the feeding line 190 , the radiator 200 , etc. may be formed on a side of the second substrate 112 facing away from the ground layer 150 .

[0083] In some embodiments, the first substrate assembly and the second substrate assembly can be attached together. After attachment, the orthographic projection of the feed line 190 on the second substrate 112 overlaps with the orthographic projection of the microstrip line 120 on the second substrate 112. Optionally, the ground layer 150 includes a first coupling hole H1, and the orthographic projection of the radiator 200 on the ground layer 150 covers the first coupling hole H1. The antenna signal transmitted between the microstrip line 120 and the ground layer 150 can be transmitted to the radiator 200 through the first coupling hole H1. The ground layer 150 includes a second coupling hole H2, and the orthographic projection of the feed line 190 on the ground layer 150 covers the second coupling hole H2. The antenna signal in the feed line 190 can be transmitted to the microstrip line 120 through the second coupling hole H2.

[0084] According to the manufacturing method of the phase shift unit of the embodiment of the present invention, the obtained phase shift unit 100 can be used to form a phase shifter of the antenna, thereby replacing the mechanical structure to control the beam scanning direction, the structure is simpler, and the manufacturing cost of the phase shifter and the antenna is reduced. The phase shift unit 100 includes a light-controlled dielectric layer 140, the microstrip line 120 and the light-emitting device layer 130 are arranged on the same side of the first substrate 111, and the ground layer 150 is located on the side of the light-controlled dielectric layer 140 away from the first substrate 111, and the antenna signal propagates between the microstrip line 120 and the ground layer 150. When the light-emitting state of the light-emitting device layer 130 changes, the dielectric constant of the light-controlled dielectric layer 140 can change with the light-emitting state of the light-emitting device layer 130. At this time, the antenna signal propagates in the light-controlled dielectric layer 140 between the microstrip line 120 and the ground layer 150, and the phase of the antenna signal changes, thereby realizing the function of phase shifting. Since the phase shift unit 100 uses the thinner optical control dielectric layer 140 as the phase control medium, the overall thickness of the phase shift unit 100 is thinner, thereby achieving lightweight and thin phase shift unit 100 and phase shifter.

[0085] Fig. 20 is a flow chart of a method for manufacturing a phase shift unit according to another embodiment of the present invention. The method for manufacturing a phase shift unit includes steps S210 to S240. Fig.21 FIG. 1 is a cross-sectional schematic diagram of a phase shift unit manufactured by a method for manufacturing a phase shift unit provided in accordance with another embodiment of the present invention. In some embodiments, the light control dielectric layer 140 may also be formed on the first substrate assembly.

[0086] In step S210, a microstrip line 120 and a light emitting device layer 130 are formed on the same side of the first substrate 111. Optionally, a first planarization layer 181 may be formed on the first substrate 111, and the orthographic projection of the first planarization layer 181 on the first substrate 111 surrounds the orthographic projection of the light emitting device layer 130 on the first substrate 111.

[0087] In step S220 , a light control dielectric layer 140 is formed on the side of the microstrip line 120 and the light emitting device layer 130 away from the first substrate 111 , wherein the dielectric constant of the light control dielectric layer 140 can change with the light emitting state of the light emitting device layer 130 .

[0088] In step S230 , a second planarization layer 182 is formed on the first substrate 111 , and the second planarization layer 182 surrounds the peripheral side of the light control dielectric layer 140 .

[0089] In step S240 , a ground layer 150 is formed on the side of the photo control dielectric layer 140 and the second planarization layer 182 facing away from the first substrate 111 .

[0090] In some embodiments, after step S240, a first substrate assembly is obtained. The manufacturing method may further include forming a feed line 190, a radiator 200, etc. on the same side of the second substrate 112 to obtain a second substrate assembly.

[0091] In some embodiments, the first substrate assembly and the second substrate assembly can be attached together through the glue layer GL, wherein the feed line 190 and the radiator 200 are located on the side of the second substrate 112 away from the light control dielectric layer 140. After attachment, the orthographic projection of the feed line 190 on the second substrate 112 overlaps with the orthographic projection of the microstrip line 120 on the second substrate 112.

[0092] In some other embodiments, before the step of forming the ground layer 150 , the manufacturing method further includes the step of forming a third substrate, and the step of forming the ground layer 150 includes: forming the ground layer 150 on the side of the third substrate 113 away from the first substrate.

[0093] Fig. 22 is a flow chart of a method for manufacturing a phase shift unit according to another embodiment of the present invention. The method for manufacturing a phase shift unit includes steps S310 to S340. Fig.23 FIG. 4 is a cross-sectional schematic diagram of a phase shift unit manufactured according to a method for manufacturing a phase shift unit provided in yet another embodiment of the present invention.

[0094] In step S310 , a microstrip line 120 and a light emitting device layer 130 are formed on the same side of a first substrate 111 to obtain a first substrate assembly.

[0095] In step S320 , a light control dielectric layer 140 is formed on the third substrate 113 to obtain a third substrate assembly, wherein the dielectric constant of the light control dielectric layer 140 can change with the light emitting state of the light emitting device layer 130 .

[0096] In step S330 , a ground layer 150 is formed on the second substrate 112 to obtain a second substrate assembly. Optionally, the feed line 190 , the radiator 200 , etc. may be formed on a side of the second substrate 112 away from the ground layer 150 .

[0097] In step S320 , the first substrate assembly, the third substrate assembly, and the second substrate assembly are assembled, wherein the light control dielectric layer 140 is located between the ground layer 150 and the microstrip line 120 .

[0098] Optionally, the first substrate assembly and the third substrate assembly are assembled by a frame bonding via a support member ST, and the second substrate assembly and the third substrate assembly are assembled by an adhesive layer GL.

[0099] According to the manufacturing method of the above embodiment, the light control dielectric layer 140 is formed separately on the third substrate 113, that is, the process of forming the light control dielectric layer 140 is separated, which reduces the difficulty of the process manufacturing. In addition, the third substrate 113 carries the light control dielectric layer 140, and the hardness requirement of the light control dielectric layer 140 is reduced, ensuring that the light control dielectric layer 140 has a relatively uniform flatness.

[0100] The embodiment of the present invention further provides a phase shifter, Fig.24 1 is a schematic top view of a phase shifter provided according to an embodiment of the present invention. The phase shifter may include a plurality of phase shifting units 100 according to any of the aforementioned embodiments, and the plurality of phase shifting units 100 are arranged in an array.

[0101] According to the phase shifter of the embodiment of the present invention, a plurality of phase shift units 100 are arranged in an array, and each phase shift unit 100 can adjust the phase of the antenna signal at the corresponding position, thereby replacing the mechanical structure to control the beam scanning direction. In the phase shift unit 100, when the light-emitting state of the light-emitting device layer 130 changes, the dielectric constant of the light-controlled dielectric layer 140 can change with the light-emitting state of the light-emitting device layer 130. At this time, the antenna signal propagates in the light-controlled dielectric layer 140 between the microstrip line 120 and the ground layer 150, and the phase of the antenna signal changes, realizing the phase shifting function. The phase shifter of the embodiment of the present invention uses a thinner light-controlled dielectric layer 140 as the phase control medium, so that the overall thickness of the phase shifter is thinner, and the phase shifter is made lighter and thinner. The structure of the phase shifter is simpler, which reduces the manufacturing cost of the phase shifter and reduces power consumption.

[0102] An embodiment of the present invention further provides an antenna. Fig.25 is a schematic top view of an antenna provided according to an embodiment of the present invention. The antenna may include multiple phase shifters according to any of the aforementioned embodiments and multiple radiators 200. The multiple radiators 200 are arranged in an array, and each radiator 200 is coupled to a corresponding phase shift unit 100 of the phase shifter.

[0103] The antenna according to the embodiment of the present invention includes a phase shifter and a radiator. A plurality of phase shifting units 100 in the phase shifter are arranged in an array. In the phase shifting unit 100, when the light-emitting state of the light-emitting device layer 130 changes, the dielectric constant of the light-controlling dielectric layer 140 can change with the light-emitting state of the light-emitting device layer 130. At this time, the antenna signal propagates in the light-controlling dielectric layer 140 between the microstrip line 120 and the ground layer 150, and the phase of the antenna signal changes, thereby realizing the phase shifting function. Each phase shifting unit 100 can adjust the phase of the antenna signal at the corresponding position, thereby replacing the mechanical structure to control the beam scanning direction, and the structure is simpler, thereby reducing the manufacturing cost of the antenna.

[0104] According to the embodiments of the present invention as described above, these embodiments do not describe all the details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and changes can be made based on the above description. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can make good use of the present invention and the modified use based on the present invention. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A phase shift unit, characterized in that: include: a first substrate; Microstrip line; A light emitting device layer, wherein the microstrip line and the light emitting device layer are arranged on the same side of the first substrate; A light control dielectric layer, located on a side of the microstrip line and the light emitting device layer away from the first substrate; as well as a ground layer, located on a side of the light control dielectric layer away from the first substrate, Wherein, the dielectric constant of the light-control dielectric layer can change with the light-emitting state of the light-emitting device layer; The light-emitting device layer comprises a first electrode layer, a light-emitting layer and a second electrode layer which are sequentially arranged from the first substrate to the light-controlling dielectric layer, wherein the second electrode layer is a light-transmitting electrode layer; At least part of the microstrip line is located on a side of the light-emitting layer away from the light-controlling dielectric layer, and the microstrip line and the first electrode layer are at least partially multiplexed with each other, or, The first electrode layer and the microstrip line are arranged in a mutually nested structure with a gap.

2. The phase shift unit according to claim 1, characterized in that: The light emitting device layer includes at least one light emitting element, and the phase shift unit further includes: A light-emitting signal line is provided on the first substrate, the light-emitting signal line is electrically connected to the light-emitting device layer, and the light-emitting signal line is used to transmit a signal for controlling the light-emitting state of the light-emitting device layer.

3. The phase shift unit according to claim 2, characterized in that: The microstrip line is electrically connected to the light emitting signal line, so that the microstrip line can receive a signal for controlling the light emitting state of the light emitting device layer.

4. The phase shift unit according to claim 1, characterized in that: The microstrip line is in a spiral shape, and the first electrode layer is in a spiral shape; or The microstrip line is in a snake shape, and the first electrode layer is in a snake shape.

5. The phase shift unit according to claim 1, characterized in that: The light-emitting layer includes a solid portion and a hollow portion, and an orthographic projection of the solid portion on the first substrate overlaps with an orthographic projection of the first electrode layer on the first substrate.

6. The phase shift unit according to claim 1, characterized in that: The light emitting device layer includes a plurality of light emitting elements, wherein the plurality of light emitting elements include at least two light emitting elements having different light emitting wavelengths, and the dielectric constant of the light control dielectric layer can change with the wavelength of the received light.

7. The phase shift unit according to claim 6, characterized in that: The at least two light-emitting elements include at least two of a red light-emitting element, an orange light-emitting element, a yellow light-emitting element, a green light-emitting element, a blue light-emitting element, and a purple light-emitting element.

8. The phase shift unit according to claim 6, characterized in that: The plurality of light-emitting elements are arranged in a preset arrangement structure, in which preset repeating units are arranged in an array in a plane parallel to the light-controlling dielectric layer, and each of the preset repeating units includes at least two light-emitting elements arranged in an array.

9. The phase shift unit according to claim 6, characterized in that: Each of the light-emitting elements comprises a first electrode, a light-emitting portion EM and a second electrode arranged in sequence from the first substrate to the light-controlling dielectric layer, wherein the second electrode is a light-transmitting electrode. The phase shifting unit also includes: At least two light-emitting power supply lines, the second electrodes of the plurality of light-emitting elements having the same light-emitting wavelength band are electrically connected to the same light-emitting power supply line.

10. The phase shift unit according to claim 9, characterized in that: The light-emitting power supply line is located on a side of the second electrode away from the first electrode, and is electrically connected to the second electrode through a via hole.

11. The phase shift unit according to claim 9, characterized in that: The light-emitting elements have different light-emitting wavelengths, and the light-emitting parts EM emit light of different colors; or Each of the light-emitting elements further includes a color conversion portion, which is located on the side of the second electrode facing the light-control dielectric layer, wherein the light-emitting portion EM of each of the light-emitting elements emits the same color, and the color conversion portions of different light-emitting elements can convert the color of the light emitted by the light-emitting portion EM into different colors.

12. The phase shift unit according to claim 6, characterized in that: The plurality of light emitting elements include a plurality of first light emitting elements on a preset track, and the first electrodes of the plurality of first light emitting elements are interconnected in sequence and multiplexed into the microstrip line.

13. The phase shift unit according to claim 12, characterized in that: The preset trajectory is a spiral trajectory or a snake-shaped trajectory.

14. The phase shift unit according to claim 12, characterized in that: Also includes: a driving layer, located between the light emitting device layer and the first substrate, the driving layer comprising a plurality of driving circuit units, The plurality of light-emitting elements further include a plurality of second light-emitting elements located outside the preset track, and the first electrode of each of the second light-emitting elements is electrically connected to a corresponding one of the driving circuit units.

15. The phase shift unit according to claim 1, characterized in that: Also includes: A scan line for providing a strobe signal; Feed data line; as well as A switch element, wherein a first end of the switch element is electrically connected to the feeding data line, a second end of the switch element is electrically connected to the microstrip line, and a control end of the switch element is electrically connected to the scanning line.

16. The phase shift unit according to claim 1, characterized in that: Also includes: A first planarization layer, wherein an orthographic projection of the first planarization layer on the first substrate surrounds an orthographic projection of the light-emitting device layer on the first substrate; A support member is arranged between the first planarization layer and the light-controlling dielectric layer, so that there is a spacing space between the light-controlling dielectric layer and the light-emitting device layer, and the orthographic projection of the support member on the first substrate is located on the peripheral side of the orthographic projection of the light-emitting device layer on the first substrate.

17. The phase shift unit according to claim 16, characterized in that: The support member includes an inner wall surface facing the interval space, and the inner wall surface is a light reflecting surface.

18. The phase shift unit according to claim 1, characterized in that: Also includes: The light scattering layer is arranged between the light control dielectric layer and the light emitting device layer.

19. The phase shift unit according to claim 1, characterized in that: Also includes: A first light reflecting layer is provided around at least a portion of a side wall of the light emitting device layer, and the first light reflecting layer is an insulating layer.

20. The phase shift unit according to claim 1, characterized in that: Also includes: A second light reflecting layer is arranged on a side of the first substrate away from the light emitting device layer, and an orthographic projection of the second light reflecting layer on the first substrate at least partially overlaps with an orthographic projection of the light emitting device layer on the first substrate.

21. The phase shift unit according to claim 1, characterized in that: Also includes: a second substrate, located on a side of the ground layer away from the first substrate; A feed line is arranged on a side of the second substrate away from the ground layer, and an orthographic projection of the feed line on the second substrate overlaps with an orthographic projection of the microstrip line on the second substrate.

22. A method for manufacturing a phase shift unit, used for manufacturing the phase shift unit according to any one of claims 1 to 21, characterized in that: include: forming a microstrip line and a light-emitting device layer on the same side of the first substrate to obtain a first substrate assembly; forming a ground layer on the second substrate; forming a light-controlling dielectric layer on a side of the ground layer away from the second substrate to obtain a second substrate assembly; The first substrate assembly is combined with the second substrate assembly, wherein the light control dielectric layer is located between the ground layer and the microstrip line, and the dielectric constant of the light control dielectric layer can change with the light emitting state of the light emitting device layer.

23. A method for manufacturing a phase shift unit, used for manufacturing the phase shift unit according to any one of claims 1 to 21, characterized in that: include: forming a microstrip line and a light emitting device layer on the same side of the first substrate; Forming a light-controlling dielectric layer on the side of the microstrip line and the light-emitting device layer away from the first substrate, wherein the dielectric constant of the light-controlling dielectric layer can change with the light-emitting state of the light-emitting device layer; forming a second planarization layer on the first substrate, wherein the second planarization layer surrounds the periphery of the light control dielectric layer; A ground layer is formed on the side of the light control dielectric layer and the second planarization layer facing away from the first substrate.

24. A method for manufacturing a phase shift unit, used for manufacturing the phase shift unit according to any one of claims 1 to 21, characterized in that: include: forming a microstrip line and a light-emitting device layer on the same side of the first substrate to obtain a first substrate assembly; forming a light-controlling dielectric layer on the third substrate to obtain a third substrate assembly, wherein the dielectric constant of the light-controlling dielectric layer can change with the light-emitting state of the light-emitting device layer; forming a grounding layer on the second substrate to obtain a second substrate assembly; The first substrate assembly, the third substrate assembly and the second substrate assembly are combined, wherein the light control dielectric layer is located between the ground layer and the microstrip line.

25. A phase shifter, characterized in that: It comprises a plurality of phase shifting units as claimed in any one of claims 1 to 21, wherein the plurality of phase shifting units are arranged in an array.

26. An antenna, characterized in that: include: The phase shifter according to claim 25, and A plurality of radiators are arranged in an array, and each of the radiators is coupled to a corresponding phase shifting unit of the phase shifter.

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