A nanosecond high-voltage pulse driving thyristor overcurrent conduction device and method

Abstract

The application relates to a nanosecond high-voltage pulse driving thyristor overcurrent conduction device and method, which comprises a thyristor module, a spiral wire pulse generation module, a primary switch module and an auxiliary trigger unit. The thyristor module adopts a conventional commercial sheet-shaped thyristor module; the spiral wire pulse generation module is formed by interlacing and tightly winding two metal belts and two insulating belts, and the whole is in a planar spiral shape; a small fast thyristor is used to form the primary switch module in series connection; and a semiconductor circuit breaker is used to steepen the pulse at the output end of the spiral wire. The nanosecond high-voltage pulse is used to act on the anode and the cathode of the conventional sheet-shaped thyristor, a bundle of fast propagation impact ionization waves is generated in the semiconductor structure of the thyristor, and the conductive channels are uniformly distributed on the whole semiconductor cylindrical cross section of the thyristor. The impact ionization wave mode makes the thyristor obtain the performance far exceeding the rated current and the current rising rate in the conventional trigger mode.

Description

Technical Field

[0001] This invention relates to the field of pulse power technology, specifically to a device and method for driving a thyristor to conduct overcurrent using a nanosecond high-voltage pulse. Background Technology

[0002] Pulsed power technology is a crucial technological foundation for national defense research and high-tech studies, and is currently one of the most popular cutting-edge high technologies internationally. Its development is currently moving towards single-pulse ultra-high power levels and high average power repetitive pulses. Repetitive frequency pulsed power technology has important applications in high-power microwaves, excimer lasers, extreme ultraviolet lithography, flue gas desulfurization and denitrification, and material surface treatment. The repetitive frequency operation of pulsed power devices places extremely high demands on the switching technology, one of their core components. To improve the overall operational effectiveness or production efficiency of the device, it is essential to develop repetitive frequency switching technology to increase the device's operating frequency and power.

[0003] Gas switches offer advantages such as high withstand voltage, large current carrying capacity, and fast turn-on speed. However, due to limitations in insulation recovery and electrode erosion, their repetitive operating frequency is generally less than 100Hz. Semiconductor switches possess excellent repetitive frequency capabilities, with maximum repetition rates reaching thousands to megahertz, and offer advantages such as easy triggering and low time delay jitter. However, the withstand voltage and current carrying capacity of a single semiconductor switch are relatively low, requiring multiple switches to be connected in series and parallel in high-power applications, further increasing the difficulty of synchronous triggering and control. Compared to semiconductor switches such as IGBTs and MOSFETs, thyristors offer high current carrying capacity and are widely used in converter stations, electric vehicles, and electromagnetic catapults. However, the rated current amplitude and rise rate of conventional thyristors differ significantly from those of gas switches, limiting their application in fast-leading-edge, high-peak-power pulsed power devices. Summary of the Invention

[0004] To address the above problems, the present invention aims to provide a nanosecond high-voltage pulse driven thyristor overcurrent conduction device and method. A fast-rising-edge, high-amplitude nanosecond voltage pulse is generated by an all-solid-state spiral pulse generator and applied between the anode and cathode of the thyristor to generate a nanosecond-level overvoltage, causing the thyristor to operate in impulse ionization wave mode, thereby obtaining a current amplitude and rise rate far exceeding the allowable conduction under conventional triggering methods.

[0005] A nanosecond high-voltage pulse driven thyristor overcurrent conduction device includes: a thyristor module, a spiral pulse generation module, a primary switching module, and an auxiliary triggering unit.

[0006] The thyristor module uses a conventional commercial chip thyristor module, with the gate and cathode shorted.

[0007] The spiral pulse generator module is composed of two metal strips and two insulating strips interlaced and tightly wound, forming a planar spiral shape. The outermost layer is the input terminal, and the innermost layer is the output terminal. The input terminal of the outer metal strip is grounded, and the output terminal is connected to the load. A semiconductor circuit breaker (SOS) is connected in parallel across the load to steepen the output pulse waveform. The input terminal of the inner metal strip is connected to a charging resistor, and the output terminal is floating. A primary switch is connected between the input terminals of the inner and outer metal strips. The outer insulating strip and the two side metal strips form the active layer transmission line, and the inner insulating strip and the two side metal strips form the passive layer transmission line.

[0008] The primary switching module consists of multiple small fast thyristors connected in series. Each small fast thyristor is connected in parallel with a voltage equalizing resistor and a reverse fast recovery diode. The small fast thyristor with the lowest operating potential is triggered by a TTL signal through an isolation transformer, while the remaining small fast thyristors are triggered by an auxiliary triggering unit.

[0009] The auxiliary triggering unit consists of an auxiliary triggering capacitor and an auxiliary triggering resistor connected in series. One end of the auxiliary triggering capacitor is connected to the gate of the miniature fast thyristor, and the other end is connected to the point of lowest potential. The auxiliary triggering resistor is connected in parallel between the gate and cathode of the miniature fast thyristor. Each miniature fast thyristor is equipped with one set of auxiliary triggering units.

[0010] The working process of the nanosecond high-voltage pulse driven thyristor overcurrent conduction device is as follows: First, a negative DC voltage -u0 is used to charge the input terminal of the spiral pulse generation module. The voltage across the primary switch is the negative DC voltage -u0. In the static state, the electric field vector of the active layer transmission line points from the outside to the inside, while the electric field vector of the passive layer transmission line points from the inside to the outside. Since their directions are opposite, the potential superimposed at the input and output terminals is zero. Then, a TTL signal is used to trigger the conduction of the small fast thyristor S0 with the lowest potential in the primary switch module. Due to the presence of the auxiliary triggering unit, a fast-leading trigger signal is sequentially generated between the gate and cathode of each of the remaining small fast thyristors, causing them to conduct. After the primary switch module is fully turned on, a voltage wave is generated at the input terminal of the active layer transmission line of the spiral pulse generation module and propagates inward along the spiral. When this voltage wave reaches the output terminal of the active layer transmission line, which is in an open-circuit state, it is totally reflected, generating a voltage wave with the opposite direction of the electric field vector in the static state, which propagates outward along the spiral. When the reflected voltage wave reaches the input of the active layer transmission line, the electric field vectors inside the active and passive layer transmission lines are in the same direction. The voltages between all active and passive layer transmission lines are superimposed, resulting in a high-amplitude, fast-rising-edge voltage pulse at the output of the spiral pulse generator module. The voltage wave undergoes multiple reflections within the active and passive layer transmission lines, generating a continuous high-frequency pulse wave at the output of the spiral pulse generator module. When the charging voltage at the input of the spiral pulse generator module is negative, the first pulse at its output is positive, and the second pulse is negative, with a higher amplitude than the first pulse. Assuming the spiral pulse generator module has N turns, the amplitude of the first pulse is U0 = -2εNu0, where ε is the voltage superposition coefficient considering energy loss and the non-ideal voltage wave propagation process. After the voltage pulse is steepened by the semiconductor circuit breaker SOS, the first positive pulse is short-circuited, and the rise rate of the second negative pulse is further increased. Simultaneously, while the anode and cathode of the thyristor module bear a DC voltage of several kilovolts, a nanosecond high-voltage pulse with a voltage rise rate greater than 1 kV / ns, generated by the spiral pulse generator module, is applied between the anode and cathode of the thyristor module through a DC blocking capacitor, generating a pulse overvoltage of appropriate multiple. At this time, a shock ionization wave can be generated and propagated within the semiconductor structure of the thyristor module, causing it to switch from the off state to the on state within hundreds of picoseconds, and the conductive channel can be uniformly distributed across the entire cross-section of the semiconductor cylinder, thereby achieving performance far exceeding the rated current and current rise rate under conventional triggering modes.

[0011] The beneficial effects of this invention are as follows:

[0012] 1. This invention utilizes nanosecond high-voltage pulses applied between the anode and cathode of a conventional chip thyristor to generate a rapidly propagating impulse ionization wave within the thyristor semiconductor structure, resulting in a uniform distribution of conductive channels across the entire cylindrical cross-section of the thyristor semiconductor. This impulse ionization wave mode enables the thyristor to achieve performance far exceeding the rated current and current rise rate under conventional triggering modes.

[0013] 2. This invention utilizes small, fast thyristors connected in series to form a primary switching module, replacing the previous design of using a three-electrode spark gap as the primary switch in helical pulse generation modules. Simultaneously, a semiconductor circuit breaker is used to steepen the pulse at the helical output end, replacing the previous design that used a two-electrode self-breakdown spark gap for pulse steepening. This achieves a fully solid-state helical pulse generation module, significantly improving the repetitive operating frequency and service life of this type of pulse generator.

[0014] 3. This invention integrates a spiral pulse generation module and a conventional thyristor module to obtain an all-solid-state thyristor overcurrent conduction device. While maintaining the thyristor's withstand voltage, it significantly improves the thyristor's conduction current capability within a relatively compact structure. Furthermore, the device can be controlled to conduct using only a TTL signal. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of a device for driving a thyristor to conduct overcurrent according to an embodiment of the present invention.

[0016] Figure 2 This is a schematic diagram of an all-solid-state spiral pulse generation module shown in an embodiment of the present invention.

[0017] Figure 3 This is a schematic diagram of a primary switch module shown in an embodiment of the present invention. Detailed Implementation

[0018] The technical solution of the present invention will be described in detail below with reference to the embodiments.

[0019] like Figure 1 As shown, an embodiment of the present invention provides a device for driving a thyristor to conduct overcurrent using a nanosecond high-voltage pulse, comprising: a thyristor module, a spiral pulse generation module, a primary switching module, and an auxiliary triggering unit. Charging voltage -U C Through the charging resistor R C For energy storage capacitor C L Charging is performed using thyristor T0 and energy storage capacitor C. L and load Z L This forms a discharge circuit. The output of the spiral pulse generator module is connected to a DC blocking capacitor C. d It is connected to both ends of the thyristor T0. Figure 1 , Figure 2 and Figure 3 The same port symbols shown indicate the positions where the parts need to be connected, namely #1+, #1-, #2+, #2-, #3+, and #3-.

[0020] The thyristor module uses a conventional commercial chip thyristor module, typically rated to withstand several kilovolts and with a diameter of approximately tens of millimeters. During use, the gate and cathode are shorted.

[0021] like Figure 2 As shown, the spiral pulse generator module is composed of two copper strips with a diameter of 12mm and a thickness of 0.1mm and two polyester film strips with a diameter of 25mm and a thickness of 0.25mm, interlaced and tightly wound into a planar spiral shape, with a total of 24 turns. The outermost layer is the input terminal, and the innermost layer is the output terminal. The charging voltage -u0 charges the spiral pulse generator module through the charging resistor R0. The input terminal of the outer copper strip is grounded, and the output terminal is connected to the load. A semiconductor circuit breaker SOS is connected in parallel across the load to steepen the output pulse waveform. The input terminal of the inner copper strip is connected to the charging resistor R0, and the output terminal is floating. A primary switching module is connected between the input terminals of the inner and outer copper strips. The outer polyester film strip and the two copper strips on both sides form the active layer transmission line, and the inner polyester film strip and the two copper strips on both sides form the passive layer transmission line.

[0022] like Figure 3 As shown, the primary switching module consists of four small fast thyristors connected in series, model Solidtron-SP-205, with a voltage equalizing resistor R connected in parallel across each small fast thyristor. d And a reverse fast recovery diode D. The first small fast thyristor S0, which has the lowest operating potential, is triggered by a 5V TTL signal through an isolation transformer (not shown in the figure). The remaining small fast thyristors S1-S3 are triggered by C respectively. S1 -C S3 and R S1 -R S3 The auxiliary triggering unit is used for triggering.

[0023] The auxiliary triggering unit consists of an auxiliary triggering capacitor C. s and an auxiliary trigger resistor R s They are connected in series. Each small, fast thyristor is equipped with a set of auxiliary triggering units. Figure 3 In the middle, C s Represented as C S1 -C S3 R s Represented as R S1 -R S3 Taking the small fast thyristor S1 as an example, C s1One end is connected to the gate of a small fast thyristor S1, and the other end is connected to the point of lowest potential in the circuit, R. s1 It is connected in parallel between the gate and cathode of the small fast thyristor S1.

[0024] The operation of the nanosecond high-voltage pulse driven thyristor overcurrent conduction device is as follows: First, a negative DC voltage of -2kV is used to charge the input terminal of the spiral pulse generation module, and the voltage across the primary switch is the charging voltage of -2kV. In a static state, the electric field vector of the active layer transmission line points from the outside in, while the electric field vector of the passive layer transmission line points from the inside out. Since their directions are opposite, the potential superimposed at the input and output terminals of the spiral pulse generation module is zero. Then, a TTL signal is used to trigger the conduction of the small fast thyristor S0 with the lowest potential in the primary switch module. Due to the presence of the auxiliary triggering unit, a fast-leading trigger signal can be generated sequentially between the gate and cathode of each of the other small fast thyristors, causing them to conduct. After the primary switch module is fully turned on, a voltage wave will be generated at the input terminal of the active layer transmission line of the spiral pulse generation module and propagate inward along the spiral. When the voltage wave reaches the output of the active layer transmission line in an open-circuit state, it is totally reflected, generating a voltage wave with the opposite direction of the electric field vector in the static state, which propagates outward along the spiral. When the reflected voltage wave reaches the input of the active layer transmission line, the electric field vectors inside the active and passive layer transmission lines are in the same direction, and the voltages between all active and passive layer transmission lines are superimposed, thus generating a high-amplitude, fast-leading voltage pulse at the output of the spiral pulse generation module. The voltage wave is reflected multiple times within the active and passive layer transmission lines, thus generating a continuous high-frequency pulse wave at the output of the spiral pulse generation module. When the charging voltage -u0 at the input of the spiral pulse generation module is -1kV, the first pulse at its output is positive, the second pulse is negative, and the amplitude of the second pulse is higher than that of the first pulse. After the voltage pulse is steepened by the semiconductor circuit breaker SOS, the first positive pulse is short-circuited, and the voltage rise rate of the second negative pulse is further increased, with an amplitude of up to -20kV and a voltage rise rate of up to 2kV / ns. At the same time, while the anode and cathode of the thyristor module T0 bear a -2kV DC voltage, the DC blocking capacitor C... dA nanosecond high-voltage pulse generated by the spiral pulse generator is applied between the anode and cathode of the thyristor module T0. Due to the capacitive effect of the load, the pulse amplitude becomes -5kV and the rise rate is approximately 1.5kV / ns, thereby generating a pulse overvoltage of approximately 2.5 times between the anode and cathode of the thyristor module T0. At this time, a rapidly propagating impulse ionization wave can be generated within the semiconductor structure of the thyristor module T0, causing it to switch from the off state to the on state within hundreds of picoseconds. Furthermore, the conductive channel can be uniformly distributed across the entire cross-section of the semiconductor cylinder, thus achieving performance far exceeding the rated current and current rise rate under conventional triggering modes. Under rated conditions, the maximum current carrying capacity of the thyristor module T0 is 8kA, and the maximum current rise rate is 400A / μs. In impulse ionization wave mode, its maximum current carrying capacity is greater than 100kA, and its maximum current rise rate is greater than 100kA / μs.

[0025] It should be understood that the above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it should not be considered that the specific embodiments of the present invention are limited to this. For those skilled in the art, several simple deductions or substitutions can be made without departing from the concept of the present invention, and all of these should be considered to fall within the scope of patent protection determined by the submitted claims.

Claims

1. A nanosecond high-voltage pulse driven thyristor overcurrent conduction device, characterized in that, include: The system comprises a thyristor module, a spiral pulse generator module, a primary switching module, and an auxiliary triggering unit. The thyristor module uses a chip thyristor module with the gate and cathode shorted. The spiral pulse generator module is formed by two metal strips and two insulating strips interlaced and tightly wound. The primary switching module consists of multiple small, fast thyristors connected in series. The auxiliary triggering unit consists of an auxiliary trigger capacitor and an auxiliary trigger resistor connected in series. The spiral pulse generator module is planarly spiral-shaped, with the outermost layer being the input terminal and the innermost layer being the output terminal. The input terminal of the outer metal strip is grounded, and the output terminal is connected to the load. A semiconductor is connected in parallel across the load. The body circuit breaker SOS steepens the output pulse waveform; the input terminal of the inner metal strip is connected to a charging resistor, and the output terminal is floating; a primary switch is connected between the input terminals of the inner and outer metal strips; the outer insulating strip and the two side metal strips form an active layer transmission line, and the inner insulating strip and the two side metal strips form a passive layer transmission line; each small fast thyristor in the primary switch module has a voltage equalization resistor and a reverse fast recovery diode connected in parallel on both sides; the small fast thyristor with the lowest operating potential is triggered by a TTL signal through an isolation transformer, and the other small fast thyristors are triggered by an auxiliary triggering unit; One end of the auxiliary trigger capacitor is connected to the gate of the miniature fast thyristor, and the other end is connected to the point of lowest potential; the auxiliary trigger resistor is connected in parallel between the gate and cathode of the miniature fast thyristor; each of the remaining miniature fast thyristors is equipped with a set of auxiliary trigger units. While the anode and cathode of the thyristor module bear a -2 kV DC voltage, a nanosecond high-voltage pulse generated by the spiral pulse generator module is applied between the anode and cathode of the thyristor module through a DC blocking capacitor. Due to the capacitive effect of the load, the pulse amplitude becomes -5 kV and the rise rate is about 1.5 kV / ns, thereby generating a pulse overvoltage of about 2.5 times between the anode and cathode of the thyristor module. A beam of fast-propagating shock ionization wave is generated in the semiconductor structure of the thyristor module, causing it to change from the off state to the on state within hundreds of picoseconds, and the conductive channel is uniformly distributed on the entire cross-section of the semiconductor cylinder.

2. A method for operating the nanosecond high-voltage pulse driven thyristor overcurrent conduction device as described in claim 1, characterized in that: Using negative polarity DC voltage - u 0. The input terminal of the spiral pulse generator module is charged, and the voltage across the primary switch is a negative DC voltage. u 0; In the static state, the electric field vector of the active layer transmission line points from the outside in, while the electric field vector of the passive layer transmission line points from the inside out; their directions are opposite, and the superimposed potential at the input and output ends is zero; then, the small fast thyristor with the lowest potential in the primary switching module is triggered using a TTL signal. S 0 is turned on, and then due to the presence of the auxiliary triggering unit, a fast leading edge trigger signal is generated between the gate and cathode of each of the remaining small fast thyristors in sequence to cause them to turn on; after the primary switching module is fully turned on, a voltage wave will be generated at the input end of the active layer transmission line of the spiral pulse generation module and will propagate inward along the spiral. When the voltage wave reaches the output of the active layer transmission line in an open-circuit state, it is totally reflected, generating a voltage wave with the opposite direction of the electric field vector in the static state, which propagates outward along the spiral. When the reflected voltage wave reaches the input of the active layer transmission line, the electric field vectors inside the active and passive layer transmission lines are in the same direction, and the voltages between all active and passive layer transmission lines are superimposed, thereby generating a high-amplitude, fast-leading voltage pulse at the output of the spiral pulse generation module. The voltage wave is refracted and reflected multiple times within the active and passive layer transmission lines, thereby generating a continuous high-frequency pulse wave at the output of the spiral pulse generation module.

3. The method according to claim 2, characterized in that: When the charging voltage at the input terminal of the spiral pulse generator module is negative, the first pulse at its output terminal is positive, the second pulse is negative, and the amplitude is higher than that of the first pulse. Assuming the spiral pulse generation module has the following number of turns: N Then the amplitude of the first pulse U 0 = -2 εNu 0, where, ε To account for energy loss and voltage superposition coefficients during non-ideal voltage wave transmission, after the voltage pulse is steepened by the semiconductor circuit breaker SOS, the first positive pulse is short-circuited, and the voltage rise rate of the second negative pulse is further increased.

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