Color conversion layer, display panel and manufacturing method

Abstract

The present invention discloses a color conversion layer, a display panel, and a manufacturing method. In one embodiment, the color conversion layer comprises: a substrate, a quantum dot color conversion structure, and a distributed Bragg reflection grating (DBRG) disposed between the substrate and the quantum dot color conversion structure. The DBRG comprises at least one overlapping layer disposed on the substrate, and the overlapping layer comprises at least two dielectric layers with different refractive indices. The color conversion layer provided in one embodiment of the present invention reflects and transmits light through the DBRG disposed between the substrate and the quantum dot color conversion structure. This includes reflecting light of a preset wavelength to drive the light to undergo multiple conversions within the quantum dot color conversion structure, and achieving a high transmittance for the emitted light. This effectively improves the color conversion efficiency of the color conversion layer. This layer is particularly useful in various display panels, effectively increasing the light utilization efficiency of the display panel and possessing broad application prospects.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a color conversion layer, a display panel and a manufacturing method. Background Art

[0002] With the progress of human society and the rapid development of nano-processing technology, artificial sub-wavelength structures have gradually attracted widespread attention and have been effectively applied in display devices because they can produce special spectra that cannot be obtained in nature.

[0003] Quantum dots (QDs), as a new type of nanoscale semiconductor, can emit light of a predetermined color under an applied electric field or light pressure. However, how to apply them reasonably has become an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0004] In order to solve at least one of the above problems, the first embodiment of the present invention provides a color conversion layer, comprising: a substrate, a quantum dot color conversion structure, and a distributed Bragg reflection grating disposed between the substrate and the quantum dot color conversion structure, wherein

[0005] The distributed Bragg reflection grating includes at least one overlapping layer provided on the substrate, and the overlapping layer includes at least two dielectric layers with different refractive indices.

[0006] For example, in the color conversion layer provided in some embodiments of the present application, the overlapping layer includes a first dielectric layer and a second dielectric layer, wherein the first dielectric layer is a material including group III nitride, and the second dielectric layer is a metal.

[0007] For example, in the color conversion layer provided in some embodiments of the present application, the overlapping layer includes a third dielectric layer, a fourth dielectric layer and a fifth dielectric layer, wherein the third dielectric layer is a metal, the fourth dielectric layer is a material including a group III nitride, and the fifth dielectric layer is a metal.

[0008] For example, in the color conversion layer provided in some embodiments of the present application, the distributed Bragg reflection grating further includes a sixth dielectric layer disposed between the overlapping layer and the substrate, and the material of the sixth dielectric layer is the same as that of the substrate.

[0009] For example, in the color conversion layer provided in some embodiments of the present application, the distributed Bragg reflection grating further includes a filling layer arranged between the grating slits, and the refractive index of the filling layer is greater than or equal to 1.1 and less than or equal to 2.0.

[0010] For example, in the color conversion layer provided in some embodiments of the present application, a period of the distributed Bragg reflection grating is greater than or equal to 200 nm and less than or equal to 800 nm.

[0011] For example, in the color conversion layer provided in some embodiments of the present application, the duty cycle of the distributed Bragg reflection grating is greater than or equal to 0.1 and less than or equal to 0.9.

[0012] For example, in the color conversion layer provided in some embodiments of the present application, the distributed Bragg reflection grating is a rectangular grating, a tilted grating, or a blazed grating.

[0013] For example, in the color conversion layer provided in some embodiments of the present application, the overlapping period of the overlapping layer is greater than or equal to 1.

[0014] For example, in the color conversion layer provided in some embodiments of the present application, the quantum dot color conversion structure includes:

[0015] a retaining wall structure surrounding the distributed Bragg reflection grating and arranged on the substrate, the retaining wall structure comprising a black matrix layer and a barrier dam layer stacked on the substrate;

[0016] a quantum dot layer disposed in the retaining wall structure and located on a side of the distributed Bragg reflection grating away from the substrate;

[0017] An encapsulation layer covers the retaining wall structure and the quantum dot layer.

[0018] A second embodiment of the present invention provides a display panel including the color conversion layer described in the first embodiment.

[0019] A third embodiment of the present invention provides a method for manufacturing the color conversion layer described in the first embodiment, comprising:

[0020] forming a distributed Bragg reflection grating on a substrate, wherein the distributed Bragg reflection grating comprises at least one overlapping layer disposed on the substrate, and the overlapping layer comprises at least two dielectric layers with different refractive indices;

[0021] A quantum dot color conversion structure is formed on the distributed Bragg reflection grating.

[0022] For example, in the manufacturing methods provided in some embodiments of the present application, forming a distributed Bragg reflection grating on a substrate further includes:

[0023] forming at least one overlapping layer including a first dielectric layer and a second dielectric layer stacked on the substrate, wherein the first dielectric layer is made of a material including a group III nitride and the second dielectric layer is made of a metal;

[0024] The overlapping layers are patterned to form the distributed Bragg reflection grating.

[0025] For example, in the manufacturing methods provided in some embodiments of the present application, at least one stacked layer including a third dielectric layer, a fourth dielectric layer, and a fifth dielectric layer is formed on the substrate, wherein the third dielectric layer is a metal, the fourth dielectric layer is a material including a group III nitride, and the fifth dielectric layer is a metal;

[0026] The overlapping layers are patterned to form the distributed Bragg reflection grating.

[0027] For example, in the manufacturing methods provided in some embodiments of the present application, patterning the overlapping layers to form the distributed Bragg reflection grating further includes:

[0028] The overlapping layer and a portion of the substrate are patterned to form the distributed Bragg reflection grating.

[0029] For example, in the manufacturing methods provided in some embodiments of the present application, after patterning the overlapping layer to form the distributed Bragg reflection grating, the manufacturing method further includes:

[0030] A filling layer is formed between the grating slits, and the refractive index of the filling layer is greater than or equal to 1.1 and less than or equal to 2.0.

[0031] The beneficial effects of the present invention are as follows:

[0032] In response to current problems, the present invention develops a color conversion layer, a display panel, and a manufacturing method. In one embodiment, the color conversion layer reflects and transmits light through a distributed Bragg reflection grating disposed between a substrate and a quantum dot color conversion structure. This includes reflecting light of a preset wavelength to drive the light to undergo multiple conversions in the quantum dot color conversion structure, and achieving a high transmittance for the outgoing light, thereby effectively improving the color conversion efficiency of the color conversion layer and remedying the problems existing in the prior art. In particular, the color conversion layer can be applied to different display panels, effectively improving the light utilization rate of the display panel, and has broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0034] Figure 1 A schematic structural diagram of a color conversion layer according to an embodiment of the present invention is shown;

[0035] Figure 2 A schematic structural diagram of a distributed Bragg reflection grating according to an embodiment of the present invention is shown;

[0036] Figure 3 A simulation diagram showing a color conversion layer according to an embodiment of the present invention;

[0037] Figures 4a-4c A schematic diagram illustrating the fabrication of a distributed Bragg reflection grating according to an embodiment of the present invention is shown;

[0038] Figure 5 A schematic structural diagram of a distributed Bragg reflection grating according to an embodiment of the present invention is shown;

[0039] Figure 6 A simulation diagram showing a color conversion layer according to an embodiment of the present invention;

[0040] Figures 7a-7c A schematic diagram illustrating the fabrication of a distributed Bragg reflection grating according to an embodiment of the present invention is shown;

[0041] Figure 8 A schematic structural diagram of a distributed Bragg reflection grating according to an embodiment of the present invention is shown;

[0042] Figure 9 A schematic structural diagram of a distributed Bragg reflection grating according to an embodiment of the present invention is shown;

[0043] Figure 10 A simulation diagram showing a color conversion layer according to an embodiment of the present invention;

[0044] Figure 11 A schematic structural diagram of a distributed Bragg reflection grating according to an embodiment of the present invention is shown;

[0045] Figure 12 A simulation diagram showing a color conversion layer according to an embodiment of the present invention;

[0046] Figure 13 A flow chart showing a method for manufacturing a color conversion layer according to an embodiment of the present invention;

[0047] Figure 14 A schematic structural diagram of a display panel according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0048] In order to more clearly illustrate the present invention, the present invention is further described below in conjunction with preferred embodiments and accompanying drawings. Similar components in the accompanying drawings are represented by the same reference numerals. It should be understood by those skilled in the art that the following detailed description is illustrative rather than restrictive and should not be used to limit the scope of protection of the present invention.

[0049] It should be noted that the terms “on…”, “formed on…” and “disposed on…” herein may indicate that one layer is directly formed or disposed on another layer, or may indicate that one layer is indirectly formed or disposed on another layer, i.e., there are other layers between the two layers. In this article, unless otherwise specified, the term “located on the same layer” means that two layers, parts, components, elements or parts can be formed by the same patterning process, and that the two layers, parts, components, elements or parts are generally formed of the same material. In this article, unless otherwise specified, the expression “patterning process” generally includes steps such as coating, exposure, development, etching, and stripping of the photoresist. The expression “one-time patterning process” means a process of forming patterned layers, parts, components, etc. using a mask.

[0050] In related technology, color filters (CFs), a filter device that selectively transmits or reflects specific incident light waves within the visible light range to produce color, are a core component of thin-film transistor liquid crystal displays (TFT-LCDs). Currently, the color images seen on displays are composed of thousands of sub-pixels. These sub-pixels are formed by light emitted by a backlight source, which ultimately passes through a color filter composed of red, green, and blue (RGB) sub-pixels. RGB color filters have the disadvantages of poor stability and low light efficiency due to absorption of other colors, resulting in significant resource waste. Quantum dots (QDs) can be made to emit light of a predetermined color by applying an external electric field or light pressure. For example, quantum dots can absorb short-wavelength blue light and excite long-wavelength red and green light. This property enables quantum dots to change the color of light emitted by the light source, while using RGB color filters to absorb the remaining light colors. However, due to the relatively low color conversion efficiency, this seriously affects light utilization.

[0051] In view of the above situation, if Figure 1 As shown, an embodiment of the present invention provides a color conversion layer, comprising: a substrate 10, a quantum dot color conversion structure 30, and a distributed Bragg reflection grating 20 disposed between the substrate 10 and the quantum dot color conversion structure 30, wherein

[0052] The distributed Bragg reflection grating 20 includes at least one overlapping layer disposed on the substrate, and the overlapping layer includes at least two dielectric layers with different refractive indices.

[0053] In this embodiment, the substrate 10 is a glass substrate, such as white glass. The quantum dot color conversion structure 30 includes a black matrix 33 disposed on the substrate 10, a barrier layer 34 disposed on the black matrix, a quantum dot layer 31 defined between the black matrix 33 and the barrier layer 34, and an encapsulation layer 32 covering the barrier layer 34 and the quantum dot layer 31. The distributed Bragg reflector grating 20 includes one or more overlapping layers. Dielectric layers with different refractive indices within the overlapping layers increase reflectivity, allowing incident light to pass through the quantum dot color conversion structure multiple times, thereby improving the color conversion efficiency of the color conversion layer. Specifically, this includes reflecting light of a predetermined wavelength, such as 450nm blue light, to drive the light to undergo multiple conversions within the quantum dot color conversion structure 30, and achieving a high transmittance for the final emitted light. The color conversion layer of this embodiment effectively improves the color conversion efficiency of the color conversion layer, remedying the problems existing in the prior art and possessing broad application prospects.

[0054] In an optional embodiment, if Figure 1 and Figure 2 As shown, the overlapping layer includes a first dielectric layer 21 and a second dielectric layer 22 , wherein the first dielectric layer 21 is made of a material including group III nitride, and the second dielectric layer 22 is made of metal.

[0055] In this embodiment, the distributed Bragg reflector grating 20 is a grating structure formed by metal and dielectric and disposed on the substrate 10 , which reflects light of a preset wavelength and transmits light of other wavelengths. Specifically, the first dielectric layer 21 is a Group I nitride such as aluminum nitride, or a ternary or quaternary alloy compound including a Group I nitride such as aluminum nitride. In this embodiment, the material of the first dielectric layer is Si3N4, and the thickness of the first dielectric layer is greater than or equal to 50 nm and less than or equal to 400 nm. The second dielectric layer 22 is a metal such as Ag, Au, Al, Cu, etc. In this embodiment, the material of the second dielectric layer is Ag, and the thickness of the second dielectric layer is greater than or equal to 5 nm and less than or equal to 100 nm. The first dielectric layer 21 and the second dielectric layer 22 have different refractive indices and form an overlapping layer. The overlapping period of the distributed Bragg reflection grating 20 is greater than or equal to 1, and the overlapping period in this embodiment is 2. The period of the distributed Bragg reflection grating is greater than or equal to 200 nm and less than or equal to 800 nm. The grating period of the distributed Bragg reflection grating 20 in this embodiment is 360 nm. The duty cycle of the distributed Bragg reflection grating is greater than or equal to 0.1 and less than or equal to 0.9. In this embodiment, the duty cycle of the distributed Bragg reflection grating 20 is 0.5.

[0056] like Figure 3As shown, this is a simulation graph of the color conversion layer of this embodiment. The reflectivity of the original color conversion layer to blue light with a wavelength of 450nm can reach 90%. At the same time, it has a high transmittance to light of other wavelengths, realizing selective transmission of light, and the reflection of blue light at 450nm realizes re-contact with the quantum dot particles in the quantum dot color conversion structure to achieve the purpose of color conversion.

[0057] like Figures 4a-4c and Figure 2 As shown, the following is an example of making a distributed Bragg reflection grating of this embodiment:

[0058] like Figure 4a As shown, a first dielectric material layer 210 is deposited on a white glass substrate 10. The first dielectric material layer is Si3N4 with a thickness of 100 nm. A second dielectric material layer 220 is deposited on the first dielectric material layer. The second dielectric material layer is Ag with a thickness of 20 nm. The first dielectric layer and the second dielectric layer have different refractive indices, forming overlapping layers. In this embodiment, the overlapping period is 2, namely, the first dielectric material layer 210, the second dielectric material layer 220, the first dielectric material layer 210, and the second dielectric material layer 220 are stacked on the substrate 10.

[0059] like Figure 4b As shown, a layer of PR glue 400 is coated as a mask according to a certain etching ratio.

[0060] like Figure 4c As shown, a PR structure mask 40 is formed by electron beam exposure, nanoimprinting or photolithography.

[0061] like Figure 2 As shown, a distributed Bragg reflection grating is formed through etching and developing processes, including a first dielectric layer 21, a second dielectric layer 22, a first dielectric layer 21 and a second dielectric layer 22. The distributed Bragg reflection grating is a rectangular grating, a tilted grating or a blazed grating, with a grating period of 360nm and a duty cycle of 0.5.

[0062] In an optional embodiment, if Figure 1 and Figure 5 As shown, the overlapping layer includes a third dielectric layer 23, a fourth dielectric layer 24 and a fifth dielectric layer 25, wherein the third dielectric layer 23 is metal, the fourth dielectric layer 24 is a material including group III nitride, and the fifth dielectric layer 25 is metal.

[0063] In this embodiment, the distributed Bragg reflector grating 20 is a grating structure composed of a metal and a dielectric provided on the substrate 10, which reflects light of a preset wavelength and transmits light of other wavelengths. Specifically, the third dielectric layer 23 is a metal, such as Ag, Au, Al, Cu, etc. The material of the third dielectric layer in this embodiment is Ag, and the thickness of the third dielectric layer is greater than or equal to 5nm and less than or equal to 100nm; the fourth dielectric layer 24 is a group 1 nitride such as aluminum nitride, or a ternary or quaternary alloy compound including group 1 nitride such as aluminum nitride. The material of the fourth dielectric layer in this embodiment is Si3N4, and the thickness of the fourth dielectric layer is greater than or equal to 50nm and less than or equal to 400nm; the fifth dielectric layer 25 is a metal, such as Ag, Au, Al, Cu, etc. The material of the fifth dielectric layer in this embodiment is Ag, and the thickness of the fifth dielectric layer is greater than or equal to 50nm and less than or equal to 400nm. The thickness is greater than or equal to 5 nm and less than or equal to 100 nm; the refractive indexes of the third dielectric layer 23, the fourth dielectric layer 24, and the fifth dielectric layer 25 are different and form overlapping layers; the overlapping period of the distributed Bragg reflection grating 20 is greater than or equal to 1, and the overlapping period of this embodiment is 1; the period of the distributed Bragg reflection grating is greater than or equal to 200 nm and less than or equal to 800 nm, and the grating period of the distributed Bragg reflection grating 20 of this embodiment is 360 nm; the duty cycle of the distributed Bragg reflection grating is greater than or equal to 0.1 and less than or equal to 0.9, and the duty cycle of the distributed Bragg reflection grating 20 of this embodiment is 0.5.

[0064] like Figure 6 As shown, this is a simulation graph of the color conversion layer of this embodiment. The reflectivity of the original color conversion layer to blue light with a wavelength of 450nm can reach 86%. At the same time, it has a high transmittance to light of other wavelengths, realizing selective transmission of light, and the reflection of blue light at 450nm realizes re-contact with the quantum dot particles in the quantum dot color conversion structure to achieve the purpose of color conversion.

[0065] like Figure 7a-4c and Figure 5 As shown, the following is an example of making a distributed Bragg reflection grating of this embodiment:

[0066] like Figure 7aAs shown, a third dielectric material layer 230 is deposited on the white glass substrate 10. The third dielectric material layer is Ag with a thickness of 20 nm. A fourth dielectric material layer 240 is deposited on the third dielectric material layer 230. The fourth dielectric material layer is Si3N4 with a thickness of 100 nm. A fifth dielectric material layer 250 is deposited on the fourth dielectric material layer. The fifth dielectric material layer is Ag with a thickness of 20 nm. The third dielectric layer, the fourth dielectric layer, and the fifth dielectric layer have different refractive indices, forming overlapping layers. In this embodiment, the overlapping period is 1, that is, the third dielectric material layer 230, the fourth dielectric material layer 240, and the fifth dielectric material layer 250 are stacked on the substrate 10.

[0067] like Figure 7b As shown, a layer of PR glue 400 is coated as a mask according to a certain etching ratio.

[0068] like Figure 7c As shown, a PR structure mask 40 is formed by electron beam exposure, nanoimprinting or photolithography.

[0069] like Figure 5 As shown, a distributed Bragg reflection grating is formed through etching and developing processes, including a third dielectric layer 23, a fourth dielectric layer 24 and a fifth dielectric layer 25. The distributed Bragg reflection grating is a rectangular grating, a tilted grating or a blazed grating, with a grating period of 360nm and a duty cycle of 0.5.

[0070] In order to further improve the color conversion efficiency of the color conversion layer, in an optional embodiment, as shown in FIG. Figure 8 and Figure 9 As shown, the distributed Bragg reflection grating further includes a sixth dielectric layer 101 disposed between the overlapping layer and the substrate 10 . The material of the sixth dielectric layer 101 is the same as that of the substrate 10 .

[0071] In this embodiment, a sixth dielectric layer 101 is provided at a position of the distributed Bragg reflector grating close to the substrate, and the reflectivity of the distributed Bragg reflector grating is further improved by the sixth dielectric layer having a different refractive index between the substrate and the overlapping layer.

[0072] Specifically, such as Figure 8 As shown, during the etching process, part of the glass of the substrate is etched by controlling the etching time or etching process to form a glass sub-grating 101. The distributed Bragg reflection grating includes the glass sub-grating 101 set at the top position, and an overlapping layer including a first dielectric layer 21 and a second dielectric layer 22.

[0073] Specifically, such as Figure 9As shown, during the etching process, a portion of the glass of the substrate is etched by controlling the etching time or etching process to form a glass sub-grating 101. The distributed Bragg reflection grating includes the glass sub-grating 101 arranged at the top position, and an overlapping layer including a third dielectric layer 23, a fourth dielectric layer 24 and a fifth dielectric layer 25. Figure 10 As shown, this is a simulation graph of the color conversion layer of this embodiment. The reflectivity of the original color conversion layer to blue light with a wavelength of 450nm can reach 90%. At the same time, it has a high transmittance to light of other wavelengths, realizing selective transmission of light, and the reflection of blue light at 450nm realizes re-contact with the quantum dot particles in the quantum dot color conversion structure to achieve the purpose of color conversion.

[0074] Considering the subsequent process integration of the color conversion layer, in an optional embodiment, as Figure 11 As shown, the distributed Bragg reflector grating further includes a filling layer 50 disposed between the grating slits, and the refractive index of the filling layer 50 is greater than or equal to 1.1 and less than or equal to 2.0.

[0075] In this embodiment, a filling layer 50 is provided between the grating slits of the distributed Bragg reflection grating, and the refractive index of the filling layer is greater than or equal to 1.1 and less than or equal to 2. The reflection of the incident light is achieved through the filling layer and the overlapping layer, or the reflection of the incident light is achieved through the filling layer, the sixth dielectric layer and the overlapping layer. At the same time, the filling layer can also support the distributed Bragg reflection grating and facilitate the production of subsequent quantum dot color conversion structures.

[0076] Specifically, such as Figure 11 As shown, during the manufacturing process, after the overlapping layers are formed, a filling layer 50 is prepared by spin coating or other methods. The filling thickness includes but is not limited to the total height of the grating plus or minus 100nm. In this embodiment, the refractive index of the filling layer 50 is 1.2, the thickness is 240nm, the grating period is 360nm, and the duty cycle is 0.5. Figure 12 As shown, this is a simulation graph of the color conversion layer of this embodiment. The reflectivity of the original color conversion layer to blue light with a wavelength of 450nm can reach 85%. At the same time, it has a high transmittance to light of other wavelengths, realizing selective transmission of light, and the reflection of blue light at 450nm realizes re-contact with the quantum dot particles in the quantum dot color conversion structure to achieve the purpose of color conversion.

[0077] In an optional embodiment, if Figure 1 As shown, the quantum dot color conversion structure 30 includes:

[0078] A retaining wall structure surrounding the distributed Bragg reflection grating 20 is provided on the substrate 10, wherein the retaining wall structure includes a black matrix layer 33 and a barrier dam layer 34 stacked on the substrate;

[0079] A quantum dot layer 31 disposed in the retaining wall structure and located on a side of the distributed Bragg reflection grating 20 away from the substrate 10;

[0080] An encapsulation layer 32 covers the retaining wall structure and the quantum dot layer 31 .

[0081] In this embodiment, the black matrix layer 33 of the retaining wall structure is used to prevent light leakage and prevent cross-color problems between adjacent pixels. The blocking dam layer 34 of the retaining wall structure is used to limit the quantum dot layer 31. The encapsulation layer 32 is used to encapsulate the quantum dot layer 31 to avoid interference from the external environment on the quantum dot particles.

[0082] Specifically, during the production process, for example Figure 2 、 Figure 5 、 Figure 8 、 Figure 9 and Figure 11 Afterwards, a black matrix layer 33 and a barrier dam layer 34 are further prepared as retaining walls through etching and development, and then the quantum dot layer 31 is printed in the space defined by the retaining wall structure through 3D printing technology. Finally, the encapsulation layer SiON32 is used to encapsulate the quantum dot layer 31.

[0083] Corresponding to the color conversion layer provided in the above-mentioned embodiment, an embodiment of the present application also provides a method for manufacturing the above-mentioned color conversion layer. Since the manufacturing method provided in the embodiment of the present application corresponds to the color conversion layer provided in the above-mentioned embodiments, the previous implementation method is also applicable to the manufacturing method provided in this embodiment and will not be described in detail in this embodiment.

[0084] like Figure 13 As shown, one embodiment of the present application further provides a method for manufacturing the color conversion layer, comprising:

[0085] forming a distributed Bragg reflection grating on a substrate, wherein the distributed Bragg reflection grating comprises at least one overlapping layer disposed on the substrate, and the overlapping layer comprises at least two dielectric layers with different refractive indices;

[0086] A quantum dot color conversion structure is formed on the distributed Bragg reflection grating.

[0087] The color conversion layer formed in this embodiment reflects and transmits light through a distributed Bragg reflection grating arranged between the substrate and the quantum dot color conversion structure, including reflecting light of a preset wavelength to drive the light to undergo multiple conversions in the quantum dot color conversion structure, and achieving a high transmittance for the outgoing light, thereby effectively improving the color conversion efficiency of the color conversion layer, compensating for the problems existing in the existing technology, and having broad application prospects.

[0088] In an optional embodiment, forming a distributed Bragg reflection grating on the substrate further comprises:

[0089] forming at least one overlapping layer including a first dielectric layer and a second dielectric layer stacked on the substrate, wherein the first dielectric layer is made of a material including a group III nitride and the second dielectric layer is made of a metal;

[0090] The overlapping layers are patterned to form the distributed Bragg reflection grating.

[0091] The color conversion layer formed in this embodiment achieves a reflectivity of 90% for blue light with a wavelength of 450nm by including an overlapping layer of a first dielectric layer and a second dielectric layer. At the same time, it has a high transmittance for light of other wavelengths, thereby achieving selective transmission of light. The reflection of blue light at 450nm is used to achieve re-contact with the quantum dot particles in the quantum dot color conversion structure, thereby achieving the purpose of color conversion.

[0092] In an optional embodiment, forming a distributed Bragg reflection grating on the substrate further comprises:

[0093] forming at least one stacked layer comprising a third dielectric layer, a fourth dielectric layer, and a fifth dielectric layer on the substrate, wherein the third dielectric layer is metal, the fourth dielectric layer is a material comprising a group III nitride, and the fifth dielectric layer is metal;

[0094] The overlapping layers are patterned to form the distributed Bragg reflection grating.

[0095] The color conversion layer formed in this embodiment achieves an 86% reflectivity for blue light with a wavelength of 450nm by including an overlapping layer of a first dielectric layer and a second dielectric layer. At the same time, it has a high transmittance for light of other wavelengths, thereby achieving selective light transmission. The reflection of blue light at 450nm is used to achieve re-contact with the quantum dot particles in the quantum dot color conversion structure, thereby achieving the purpose of color conversion.

[0096] In an optional embodiment, patterning the overlapping layers to form the distributed Bragg reflection grating further comprises:

[0097] The overlapping layer and a portion of the substrate are patterned to form the distributed Bragg reflection grating.

[0098] The color conversion layer formed in this embodiment is formed by arranging a sixth dielectric layer near the substrate at the distributed Bragg reflector grating, and further improving the reflectivity of the distributed Bragg reflector grating by the sixth dielectric layer with different refractive index between the substrate and the overlapping layer.

[0099] In an optional embodiment, after patterning the overlapping layer to form the distributed Bragg reflection grating, the manufacturing method further includes:

[0100] A filling layer is formed between the grating slits, and the refractive index of the filling layer is greater than or equal to 1.1 and less than or equal to 2.0.

[0101] The color conversion layer formed in this embodiment reflects the incident light through the filling layer and the overlapping layer, or reflects the incident light through the filling layer, the sixth dielectric layer and the overlapping layer; at the same time, the filling layer can also support the distributed Bragg reflection grating and facilitate the production of subsequent quantum dot color conversion structures.

[0102] Based on the above color conversion layer, one embodiment of the present application further provides a display panel including the above color conversion layer.

[0103] The display panel of this embodiment is a display panel including the above-mentioned color conversion layer, and can be an organic electroluminescent display panel, a MiniLed display panel, a MicroLED or a quantum dot electroluminescent display panel, which can improve the color conversion efficiency of the display panel and further improve the light utilization rate.

[0104] In a specific embodiment, Figure 14 As shown, the display panel is a MiniLed display panel, comprising a substrate 10, a distributed Bragg reflection grating 20, a quantum dot color conversion structure 30, and a MiniLed light-emitting layer 60. Specifically, the structures of the distributed Bragg reflection grating 20 and the quantum dot color conversion structure 30 are described in the previous embodiment and are not further described here. The MiniLed light-emitting layer comprises a GaN buffer layer 62, an n-type GaN layer 63, a quantum well 64, an anode 65, a cathode metal 66, and a cathode 67, and is bonded to the color conversion layer via bonding adhesive 61.

[0105] The light emitted by the display panel of this embodiment is reflected and transmitted by the distributed Bragg reflection grating of the color conversion layer, including reflecting light of a preset wavelength to drive the light to undergo multiple conversions in the quantum dot color conversion structure, and achieving a high transmittance for the outgoing light, thereby effectively improving the color conversion efficiency and light utilization rate, compensating for the problems existing in the existing technology, and having broad application prospects.

[0106] Based on the above display panel, one embodiment of the present application further provides a display device comprising the above display panel. The display device may be an organic electroluminescent display device, a MiniLED display device, a MicroLED display device, or a quantum dot electroluminescent display device, which can improve the color conversion efficiency of the display panel and further improve light utilization.

[0107] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not limitations on the implementation methods of the present invention. For ordinary technicians in the relevant field, other different forms of changes or modifications can be made based on the above description. It is impossible to list all the implementation methods here. All obvious changes or modifications derived from the technical solution of the present invention are still within the scope of protection of the present invention.

Claims

1. A display panel, characterized in that: The color conversion layer includes a substrate, a quantum dot color conversion structure, a distributed Bragg reflection grating arranged between the substrate and the quantum dot color conversion structure, and a light-emitting layer arranged on a side of the quantum dot color conversion structure away from the substrate, wherein The distributed Bragg reflection grating includes at least one overlapping layer provided on the substrate, wherein the overlapping layer includes at least two dielectric layers with different refractive indices; The display panel is an organic electroluminescent display panel, a MiniLed display panel, a MicroLED or a quantum dot electroluminescent display panel, and the reflectivity of the color conversion layer to blue light with a wavelength of 450nm is greater than or equal to 85%.

2. The display panel according to claim 1, wherein: The overlapping layer includes a first dielectric layer and a second dielectric layer, wherein the first dielectric layer is a material including a group III nitride and the second dielectric layer is a metal; or The overlapping layer includes a third dielectric layer, a fourth dielectric layer and a fifth dielectric layer, wherein the third dielectric layer is metal, the fourth dielectric layer is a material including group III nitride, and the fifth dielectric layer is metal.

3. The display panel according to claim 2, wherein: The distributed Bragg reflection grating further includes a sixth dielectric layer disposed between the overlapping layer and the substrate. The material of the sixth dielectric layer is the same as that of the substrate.

4. The display panel according to claim 2 or 3, wherein: The distributed Bragg reflector grating further includes a filling layer arranged between the grating slits, and the refractive index of the filling layer is greater than or equal to 1.1 and less than or equal to 2.

0.

5. The display panel according to claim 1, wherein: The period of the distributed Bragg reflection grating is greater than or equal to 200 nm and less than or equal to 800 nm; and / or The duty cycle of the distributed Bragg reflection grating is greater than or equal to 0.1 and less than or equal to 0.9; and / or The distributed Bragg reflection grating is a rectangular grating, a tilted grating or a blazed grating; and / or The overlapping period of the overlapping layers is greater than or equal to 1.

6. The display panel according to claim 1, wherein: The quantum dot color conversion structure includes: a retaining wall structure surrounding the distributed Bragg reflection grating and arranged on the substrate, the retaining wall structure comprising a black matrix layer and a barrier dam layer stacked on the substrate; a quantum dot layer disposed in the retaining wall structure and located on a side of the distributed Bragg reflection grating away from the substrate; An encapsulation layer covers the retaining wall structure and the quantum dot layer.

7. A method for manufacturing a display panel according to any one of claims 1 to 6, characterized in that: include: forming a distributed Bragg reflection grating on a substrate, wherein the distributed Bragg reflection grating comprises at least one overlapping layer disposed on the substrate, and the overlapping layer comprises at least two dielectric layers with different refractive indices; forming a quantum dot color conversion structure on the distributed Bragg reflection grating; A light-emitting layer is formed on the quantum dot color conversion structure; the display panel is an organic electroluminescent display panel, a MiniLed display panel, a MicroLED or a quantum dot electroluminescent display panel, and the reflectivity of the color conversion layer to blue light with a wavelength of 450nm is greater than or equal to 85%.

8. The production method according to claim 7, characterized in that: The forming of a distributed Bragg reflection grating on the substrate further comprises: forming at least one overlapping layer including a first dielectric layer and a second dielectric layer stacked on the substrate, wherein the first dielectric layer is made of a material including a group III nitride and the second dielectric layer is made of a metal; patterning the overlapping layers to form the distributed Bragg reflection grating; or forming at least one stacked layer comprising a third dielectric layer, a fourth dielectric layer, and a fifth dielectric layer on the substrate, wherein the third dielectric layer is metal, the fourth dielectric layer is a material comprising a group III nitride, and the fifth dielectric layer is metal; The overlapping layers are patterned to form the distributed Bragg reflection grating.

9. The production method according to claim 8, characterized in that: The patterning of the overlapping layers to form the distributed Bragg reflection grating further comprises: The overlapping layer and a portion of the substrate are patterned to form the distributed Bragg reflection grating.

10. The production method according to claim 8 or 9, characterized in that: After patterning the overlapping layers to form the distributed Bragg reflection grating, the manufacturing method further includes: A filling layer is formed between the grating slits, and the refractive index of the filling layer is greater than or equal to 1.1 and less than or equal to 2.0.

Images