Substrate processing equipment and substrate processing method

Abstract

The present invention relates to a substrate processing device and a substrate processing method. The substrate processing device and the substrate processing method according to the present invention have the following advantages: the substrate processing device includes a chamber, the inner space of the chamber is divided into a first space and a second space, and a film with uniform thickness can be formed on the substrates respectively placed in the first space and the second space by sequentially spraying process gas onto substrates respectively placed in the first space and the second space.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and method, and more particularly to a substrate processing device and method capable of sequentially spraying process gas onto a substrate located in a first space and a second space obtained by dividing the inner space of a chamber of the substrate processing device, thereby forming a thin film with uniform thickness. Background Art

[0002] Generally speaking, thin film deposition, photolithography, etching and other processes are performed to manufacture semiconductor devices, and each process is performed in a chamber that is the best environment for the corresponding process. The thin film deposition process refers to the process of forming a thin film by depositing raw materials on a silicon wafer, the photolithography process refers to the process of exposing or hiding a selected area in the thin film using a photosensitive material, and the etching process refers to the process of patterning the selected area in a desired manner by removing the thin film in the selected area.

[0003] As a thin film deposition device for forming a predetermined thin film on a silicon wafer, various devices such as a chemical vapor deposition (CVD) device and an atomic layer deposition (ALD) device can be used. The thin film deposition device is applied to various fields for manufacturing semiconductors. In recent years, with the sudden reduction of the design rules of semiconductor devices, a thin film with a fine pattern is required. Therefore, the use of ALD devices that can uniformly form fine patterns with atomic layer thickness has increased.

[0004] CVD devices deposit reaction products on a substrate, which are generated on the substrate by simultaneously injecting multiple gas molecules into a process chamber. However, ALD equipment deposits chemical reaction products only on the top surface of the substrate by injecting one gas material into the process chamber, purging the gas material to leave only the gas physically adsorbed on the top of the heated substrate, and then injecting another gas material.

[0005] Among the deposition apparatuses, the ALD apparatus can deposit nano-thin films with excellent uniformity. Therefore, the ALD apparatus has attracted much attention as a deposition technology required for manufacturing nano-scale semiconductor devices. In particular, the ALD apparatus can accurately control the thickness of the film in angstroms. Therefore, the ALD apparatus has excellent step coverage, and can even uniformly deposit complex three-dimensional structures, and accurately control the thickness and composition of the film. Therefore, the ALD apparatus can deposit materials across a large area at a uniform speed.

[0006] Conventionally, a substrate processing apparatus to which the ALD device is applied includes a substrate supporting unit for supporting a substrate, and a gas injection unit disposed on the top of the substrate supporting unit and configured to inject a process gas.

[0007] At this time, the gas injection unit injects the raw material gas onto the top of the substrate placed on the substrate support unit, and then injects the purge gas to purge the top of the substrate. Subsequently, the process of injecting the reaction gas onto the top of the substrate and then injecting the purge gas again to purge the top of the substrate is repeated to form a uniform thin film on the top of the substrate.

[0008] However, a problem with conventional ALD apparatuses is that since a thin film is deposited by sequentially spraying a source gas and a reaction gas toward a substrate in a chamber, productivity is reduced.

[0009] Even when processing a plurality of substrates, thin film deposition is performed at a position where the substrates located in the first space and the second space are fixed. In this case, a structural problem in the chamber or an influence of a heater terminal formed on a substrate supporting unit may change the uniformity of thin films deposited on the plurality of substrates located in the first space and the second space. Summary of the invention

[0010] Technical issues

[0011] Various embodiments are directed to a substrate processing device and method that can repeat the process of independently forming a thin film in a first space and a second space, wherein the first space and the second space are obtained by dividing the internal space of a chamber of the substrate processing device and do not overlap with each other, and by spraying process gas onto a first substrate and a second substrate respectively located in the first space and the second space, after forming a thin film with a predetermined thickness, a base supporting a plurality of substrates is rotated by a predetermined angle to change the positions of the first substrate and the second substrate, and the process gas is sprayed again to form a thin film with a predetermined thickness, thereby minimizing the influence of the positions in the first space and the second space, thereby forming a thin film with uniform thickness.

[0012] Technical means

[0013] In one embodiment, a substrate processing device may include: a chamber including a first space and a second space that does not overlap with the first space; a rotatable base arranged to span the first space and the second space in the chamber, and configured to support one or more substrates in the first space and to support one or more substrates in the second space; a first injection unit facing the base in the first space and configured to inject two or more different gases into the first space; and a second injection unit facing the base in the second space and configured to inject two or more different gases into the second space; wherein the first injection unit and the second injection unit each include: a first gas injection channel configured to inject a first gas; and a second gas injection channel configured to inject a second gas different from the first gas.

[0014] In one embodiment, a substrate processing method is provided, wherein a substrate is processed by using a substrate processing device, the substrate processing device comprising: a chamber, comprising a first space and a second space that does not overlap with the first space; a rotatable base, arranged to span the first space and the second space in the chamber, and configured to support one or more substrates in the first space and to support one or more substrates in the second space; a first injection unit, facing the base in the first space, and configured to inject two or more different gases into the first space; and a second injection unit, facing the base in the second space, and configured to inject two or more different gases into the second space. The substrate processing method may include: a substrate setting step, wherein one or more first substrates and one or more second substrates are respectively set under a first injection unit and a second injection unit; a first thin film forming step, wherein the process of sequentially spraying raw material gas and reaction gas toward the first substrate and the second substrate through the first injection unit and the second injection unit is repeated once or multiple times; a first base rotating step, wherein the first substrate is moved to the bottom of the second injection unit and the second substrate is moved to the bottom of the first injection unit by rotating the base by a predetermined angle; and a second thin film forming step, wherein the process of sequentially spraying raw material gas and reaction gas toward the second substrate and the first substrate through the first injection unit and the second injection unit is repeated once or multiple times.

[0015] In one embodiment, a substrate processing method is provided, wherein a substrate is processed by using a substrate processing device, wherein the substrate processing device comprises: a chamber, comprising a first space and a second space that does not overlap with the first space; a rotatable base, arranged to span the first space and the second space in the chamber, and configured to support one or more substrates in the first space and one or more substrates in the second space; a first injection unit, facing the base in the first space, and configured to inject two or more different gases into the first space; and a second injection unit, facing the base in the second space, and configured to inject two or more different gases into the second space. The substrate processing method may include: a substrate setting step, wherein one or more first substrates and one or more second substrates are respectively set under the first injection unit and the second injection unit; and a thin film forming step, wherein a process of sequentially injecting a raw material gas and a reaction gas to the first substrate and the second substrate through the first injection unit and the second injection unit is repeated one or more times, wherein the thin film forming step comprises: injecting a raw material gas through a first gas injection channel; and injecting a reaction gas through a second gas injection channel different from the first gas injection channel.

[0016] Technical Effects

[0017] According to an embodiment of the present disclosure, a substrate processing device and method can repeat the following process: forming a thin film with a predetermined thickness by sequentially spraying a first gas and a second gas onto substrates disposed in a first space and a second space, rotating a base, and forming a thin film with a predetermined thickness by sequentially spraying the first gas and the second gas onto substrates disposed in the first space and the second space again, thereby forming a thin film with a predetermined thickness, thereby improving the uniformity of thin films deposited on multiple substrates located in the first space and the second space. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a diagram for describing a planar structure inside a chamber in a substrate processing apparatus according to an embodiment of the present disclosure.

[0019] Figure 2a is briefly shown along Figure 1 A cross-sectional view of the cross section of the cavity taken along line BB.

[0020] Figure 2b yes Figure 2a An enlarged cross-sectional view of portion C of FIG.

[0021] Figure 2c yes Figure 2a An enlarged cross-sectional view of portion D of FIG.

[0022] Figure 3a and Figure 3b is a diagram for describing a bottom plan structure of a susceptor in a substrate processing apparatus according to an embodiment of the present disclosure.

[0023] Figure 4 is a process flow chart showing a substrate processing method according to one embodiment of the present disclosure.

[0024] Figure 5 is a process flow chart showing a substrate processing method according to another embodiment of the present disclosure. DETAILED DESCRIPTION

[0025] The exemplary embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings so that those skilled in the art can easily implement the present disclosure. In the reference symbols marked on the various drawings, similar reference symbols represent the same components.

[0026] Furthermore, in describing the present disclosure, detailed descriptions of related well-known technologies will be excluded to avoid making the subject matter of the present disclosure unnecessarily obscure.

[0027] For example, terms such as first and second may be used to describe various components, but these components are not limited by the terms, and these terms are only used to distinguish one component from another.

[0028] Figure 1 is a diagram for describing a planar structure inside a chamber in a substrate processing apparatus according to an embodiment of the present disclosure, and Figure 2a is briefly shown along Figure 1 A cross-sectional view of the cross section of the cavity taken along line BB. Figure 2b yes Figure 2a is an enlarged cross-sectional view of a portion C of Figure 2c yes Figure 2a An enlarged cross-sectional view of portion D of FIG.

[0029] Below, we will refer to Figure 1 and Figure 2a to Figure 2c A substrate processing apparatus 1000 according to an embodiment of the present disclosure is described.

[0030] The substrate treating apparatus 1000 according to an embodiment of the present disclosure includes a chamber 1100 , a chamber cover 1200 , a susceptor 1300 , and a gas injection unit 1400 .

[0031] The chamber 1100 in which actual processes such as thin film deposition and etching are performed on the substrate can be coupled to the chamber cover 1200 to form a closed reaction space. At this time, the reaction space may include a first space A1, a second space A2, and a third space A3. The third space A3 can be used as a purge space to separate the first space A1 and the second space A2 from each other.

[0032] The susceptor 1300 spans the first space A1 and the second space A2 in the chamber 1100, and the susceptor 1300 supports one or more substrates W1 in the first space A1 and one or more substrates W2 in the second space A2. For the process, the susceptor 1300 can rotate in a horizontal clockwise or counterclockwise direction around a rotation axis 1310 located at the bottom thereof. At this time, the susceptor 1300 can rotate at a predetermined angle in a predetermined period of time.

[0033] The base 1300 can load a plurality of substrates W1 and W2 to positions spaced apart from each other at a predetermined angle. At this time, the spacing between the positions where the substrates W1 and W2 are loaded can be determined in consideration of the spacing between the first spray unit 1410, the second spray unit 1420, and the third spray unit 1430. For example, the spacing between the positions where the substrates W1 and W2 are loaded can be set to the same value as the spacing between the first spray unit 1410, the second spray unit 1420, and the third spray unit 1430.

[0034] The third spray unit 1430 may be disposed above the susceptor 1300 based on the rotation center of the susceptor 1300 so that the third spray unit 1430 and the susceptor 1300 face each other. The third spray unit 1430 sprays the purge gas to form a third space A3 that divides the interior of the chamber 1100 into the first space A1 and the second space A2.

[0035] At the top of the first space A1 in the cavity 1100, a first spray unit 1410 is formed toward the base 1300. The first spray unit 1410 is used to spray two or more different gases into the first space A1. In addition, at the top of the second space A2 in the cavity 1100, a second spray unit 1420 is formed toward the base 1300. The second spray unit 1420 is used to spray two or more different gases into the second space A2.

[0036] The first injection unit 1410 includes a first gas injection channel 1410a and a second gas injection channel 1410b. The first gas is injected into the first space A1 through the first gas injection channel 1410a, and the second gas different from the first gas is injected into the first space A1 through the second gas injection channel 1410b. The first injection unit 1410 forms a thin film on the substrate located in the first space A1 by alternately injecting the first gas and the second gas into the first space A1 through the first gas injection channel 1410a and the second gas injection channel 1410b. At this time, the first gas or the second gas can be injected toward the substrate in a plasma state.

[0037] When the first gas is plasma-formed and sprayed, the inert first gas can be activated to generate a large number of free radicals and ions. Therefore, the first gas can be decomposed even at low temperatures, and impurities contained in the first gas itself can be effectively removed. When the second gas is plasma-formed and sprayed, the density of the film can be increased to increase the uniformity of the film.

[0038] Depending on the electrode structure, the plasma may be realized as direct plasma or remote plasma generated by applying RF power to a space where the first gas resides.

[0039] The first spray unit 1410 may spray the purge gas after spraying the first gas or the second gas. The first spray unit 1410 sprays the first purge gas during the period between the time point of spraying the first gas and the time point of spraying the second gas, and sprays the second purge gas during the period between the time point of spraying the second gas and the time point of spraying the first gas. At this time, one or more of the first purge gas and the second purge gas may be sprayed toward the substrate in a plasma state. When the first purge gas and the second purge gas are plasmatized and sprayed, they may be selectively deposited on the top, bottom, and sidewall of the pattern formed on the film. In addition, when the purge gas is plasmatized and sprayed on the film, hydrogen contained in the surface of the film may be removed to modify the surface of the film, thereby forming a film with high selectivity.

[0040] The first spray unit 1410 may include an electrode 1411 for spraying the first gas, the second gas, the first purge gas, or the second purge gas toward the substrate in a plasma state.

[0041] The electrode 1411 may include a first electrode 1411a and a second electrode 1411b. The first electrode 1411a may have a plurality of protruding electrodes 1411a1 formed thereon, and the second electrode 1411b may have openings formed at positions corresponding to the protruding electrodes 1411a1 so that the protruding electrodes 1411a1 are inserted into the openings.

[0042] In order to generate plasma between the side surface of the protruding electrode 1411a1 and the inner surface of the opening of the second electrode 1411b, RF power may be applied to at least either one of the first electrode 1411a and the second electrode 1411b through the RF power supply units 1413a and 1413b.

[0043] The first gas is injected through the first gas injection channel 1410a extending to the protruding electrode 1411a1, and the second gas is injected through the second gas injection channel 1410b between the side surface of the protruding electrode 1411a1 and the inner surface of the opening of the second electrode 1411b.

[0044] The second injection unit 1420 includes a first gas injection channel and a second gas injection channel, and injects the first gas into the second space A2 through the first gas injection channel, and injects the second gas different from the first gas into the second space A2 through the second gas injection channel. The second injection unit 1420 forms a thin film on the substrate located in the second space A2 by alternately injecting the first gas and the second gas into the second space A2 through the first gas injection channel and the second gas injection channel. At this time, the first gas or the second gas can be sprayed toward the substrate in a plasma state. The detailed configuration of the second injection unit 1420 is the same as the detailed configuration of the first injection unit 1410.

[0045] The second spray unit 1420 may spray the purge gas after spraying the first gas or the second gas. The second spray unit 1420 sprays the first purge gas during the period between the time point of spraying the first gas and the time point of spraying the second gas, and sprays the second purge gas during the period between the time point of spraying the second gas and the time point of spraying the first gas. At this time, one or more of the first purge gas and the second purge gas may be sprayed toward the substrate in a plasma state.

[0046] The second spray unit 1420 may include an electrode for spraying the first gas, the second gas, the first purge gas, or the second purge gas toward the substrate in a plasma state.

[0047] The electrode may include a first electrode and a second electrode. The first electrode may have a plurality of protruding electrodes formed thereon, and the second electrode may have openings formed at positions corresponding to the protruding electrodes so that the protruding electrodes are inserted into the openings.

[0048] In order to generate plasma between the side surface of the protruding electrode and the inner surface of the opening of the second electrode, RF power may be applied to at least any one of the first electrode and the second electrode.

[0049] The first gas is injected through a first gas injection flow path extending to the protruding electrode, and the second gas is injected through a second gas injection flow path between a side surface of the protruding electrode and an inner surface of the opening of the second electrode.

[0050] In the present disclosure, the first gas is described as a raw material gas and the second gas is described as a reaction gas. However, the present disclosure is not limited thereto, and the first gas may also be a reaction gas and the second gas may also be a raw material gas.

[0051] When the first spray unit 1410 and the second spray unit 1420 spray the first gas or the second gas, the susceptor 1300 may be stopped.

[0052] The chamber 1100 may further include a third space A3 between the first space A1 and the second space A2. The third space A3 may include a third spray unit 1430 configured to spray a third purge gas toward the susceptor. At this time, the third purge gas may be sprayed toward the substrate in a plasma state.

[0053] The third spray unit 1430 may include an electrode 1431 for spraying the third purge gas toward the substrate in a plasma state.

[0054] The electrode 1431 may include a third electrode 1431a and a fourth electrode 1431b. The third electrode 1431a may have a plurality of protruding electrodes 1431a1 formed thereon, and the fourth electrode 1431b may have openings formed at positions corresponding to the protruding electrodes 1431a1 so that the protruding electrodes 1431a1 are inserted into the openings.

[0055] To generate plasma between the side surface of the protruding electrode 1431a1 and the inner surface of the opening of the fourth electrode 1431b, RF power may be applied to at least either one of the third electrode 1431a and the fourth electrode 1431b through the RF power supply units 1433a and 1433b.

[0056] The thin film formed on the substrate may be subjected to plasma treatment by the first spray unit 1410 and the second spray unit 1420. When such plasma treatment is performed on the thin film, the electrical and optical properties of the deposited thin film may be improved, and the surface modification properties of the thin film such as hydrophobicity or hydrophilicity may be improved, thereby improving the uniformity of the entire thin film.

[0057] Figure 3a and Figure 3b is a diagram for describing a heater arrangement structure in a susceptor of a substrate processing apparatus according to an embodiment of the present disclosure.

[0058] Figure 3a is a diagram for describing a heater arrangement structure within a susceptor of a substrate processing apparatus according to an embodiment of the present disclosure, and Figure 3b is a diagram for describing a heater arrangement structure after a susceptor of a substrate processing apparatus according to an embodiment of the present disclosure is rotated 180 degrees.

[0059] like Figure 3a and Figure 3b As shown, the substrate processing apparatus 1000 according to an embodiment of the present disclosure may further include a heater 1500, which is installed at the bottom of the base 1300 and is used to heat the substrate. The heater 1500 may include a plurality of heater members 1510, 1520, 1530, 1540, and 1550, each configured as an elongated tubular line. The plurality of heater members 1510, 1520, 1530, 1540, and 1550 may form a concentric pattern and include a plurality of power supply terminals 1510a, 1520a, 1530a, 1540a, and 1550a connected to an external power supply (not shown).

[0060] Generally speaking, the heater member and the power supply terminal of the heater can be symmetrically arranged in the first space and the second space in a concentric shape. However, when the heater member and the power supply terminal are symmetrically formed in the first space and the second space, even if the substrate already located in the first space is moved by the rotation of the base and located in the second space, the power supply terminal can be arranged in the same area. Therefore, the uniformity of the thin film deposited on the plurality of substrates located in the first space and the second space can be changed.

[0061] In the substrate processing apparatus according to the embodiment of the present disclosure, a plurality of heater members 1510, 1520, 1530, 1540, and 1550 and power supply terminals 1510a, 1520a, 1530a, 1540a, and 1550a may be asymmetrically arranged in the first and second spaces A1 and A2. Alternatively, the pattern of the heater members arranged in the first space may be different from the pattern of the heater members arranged in the second space. Therefore, the temperature distribution of the substrate located in the first space may be different from the temperature distribution of the substrate located in the second space after being moved out of the first space by the rotation of the susceptor.

[0062] Therefore, the heater member and the power supply terminal may be asymmetrically arranged, or the pattern of the heater member may be different between when the substrate is located in the first space and when the substrate is located in the second space. Therefore, the substrate processing apparatus according to an embodiment of the present disclosure can prevent the uniformity of the thin film deposited on the substrate from being reduced.

[0063] Figure 4 is a process flow chart showing a substrate processing method according to one embodiment of the present disclosure.

[0064] According to an embodiment of the present disclosure, a substrate processing method processes a substrate by using a substrate processing device, wherein the substrate processing device includes: a chamber including a first space and a second space that does not overlap with the first space; a rotatable base configured to support one or more substrates in the first space and the second space; a first injection unit facing the base and configured to inject a gas into the first space; and a second injection unit facing the base and configured to inject a gas into the first space. Figure 4 The substrate processing method includes a substrate setting step S410, a first thin film forming step S420, a first base rotating step S430 and a second thin film forming step S440.

[0065] The substrate setting step S410 includes setting one or more first substrates under a first spray unit and one or more second substrates under a second spray unit. The first spray unit faces a susceptor arranged in the chamber across the first space and the second space, and sprays two or more different gases into the first space, while the second spray unit faces the susceptor and sprays two or more different gases into the second space.

[0066] The first thin film forming step S420 includes repeating one or more times the process of sequentially spraying the raw material gas and the reaction gas toward the first substrate and the second substrate through the first spray unit and the second spray unit, respectively, to form a thin film with a predetermined thickness.

[0067] The first susceptor rotating step S430 includes moving the first substrate to below the second spray unit and moving the second substrate to below the first spray unit by rotating the susceptor by a predetermined angle.

[0068] The second thin film forming step S440 includes repeating one or more times a process of alternately spraying the raw material gas and the reaction gas toward the second substrate and the first substrate through the first spray unit and the second spray unit, respectively, to form a thin film with a predetermined thickness.

[0069] When the raw material gas and the reaction gas are alternately sprayed to form the thin film in the first thin film forming step S420 and the second thin film forming step S440 , the raw material gas or the reaction gas may be sprayed toward the substrate in a plasma state.

[0070] When the raw material gas is plasma-formed and sprayed, the inert raw material gas can be activated to generate a large number of free radicals and ions. Therefore, the raw material gas can be decomposed even at low temperatures, and impurities contained in the raw material gas itself can be effectively removed. When the reaction gas is plasma-formed and sprayed, the density of the film can be increased to improve the quality of the film.

[0071] Depending on the electrode structure, plasma may be realized as direct plasma or remote plasma generated by applying RF power to a space where the raw material gas stays.

[0072] In the first thin film forming step S420 and the second thin film forming step S440 , the susceptor may be stopped when the source gas or the reaction gas is sprayed.

[0073] The substrate processing method may further include a second susceptor rotating step S450 after the second thin film forming step S440 , wherein the second susceptor rotating step S450 includes moving the first substrate below the first spray unit and moving the second substrate below the second spray unit by rotating the susceptor by a predetermined angle.

[0074] According to the substrate processing method according to the embodiment of the present disclosure, the first thin film forming step S420, the first base rotating step S430, the second thin film forming step S440 and the second base rotating step S450 may be repeated alternately to form a thin film with a preset thickness. The substrate processing method may further include a step S460 of confirming whether a thin film with a desired thickness is formed. Thereafter, the first thin film forming step S420, the first base rotating step S430, the second thin film forming step S440 and the second base rotating step S450 are repeated until a thin film with a desired thickness is formed.

[0075] In the first thin film forming step S420 and the second thin film forming step S440 , the susceptor may be stopped when the source gas or the reaction gas is sprayed.

[0076] In the first and second thin film forming steps S420 and S440 , the purge gas may be injected during a period between when the raw material gas is injected and when the reaction gas is injected or during a period between when the reaction gas is injected and when the raw material gas is injected.

[0077] The purge gas may include a first purge gas injected during a period between the time point of injecting the raw material gas and the time point of injecting the reaction gas, and a second purge gas injected during a period between the time point of injecting the reaction gas and the time point of injecting the raw material gas. At this time, one or more of the first purge gas and the second purge gas may be injected toward the substrate in a plasma state. When the first purge gas and the second purge gas are plasma-formed and injected, they may be selectively deposited on the top, bottom, and sidewall of the pattern formed on the film. In addition, when the purge gas is plasma-formed and injected onto the film, hydrogen contained in the surface of the film may be removed to modify the surface of the film, thereby forming a film with high selectivity.

[0078] One or more source gases or reaction gases other than the first purge gas and the second purge gas may also be sprayed toward the substrate in a plasma state.

[0079] The chamber 1100 of the substrate processing apparatus may further include a third space A3 between the first space A1 and the second space A2. The third space A3 may include a third spray unit 1430 configured to spray a third purge gas toward the susceptor. The third spray unit 1430 may spray the third purge gas toward the susceptor in the first susceptor rotating step S430 and the second susceptor rotating step S450. At this time, the third purge gas may be sprayed toward the substrate in a plasma state. Thereafter, the thin film formed on the substrate may be subjected to plasma treatment.

[0080] When the source gas or the reaction gas is sprayed in the first thin film forming step S420 and the second thin film forming step S440, the third spray unit 1430 may spray the third purge gas toward the susceptor. Thereafter, the thin film formed on the substrate may be subjected to plasma treatment.

[0081] When the source gas or the reaction gas is sprayed in the first thin film forming step S420 and the second thin film forming step S440, the third spray unit 1430 may spray the third purge gas toward the susceptor. At this time, the third purge gas may be sprayed toward the substrate in a plasma state.

[0082] The substrate processing method according to the embodiment of the present disclosure may include performing plasma treatment on a thin film formed on a substrate. When such plasma treatment is performed on the deposited thin film, the electrical and optical properties of the thin film can be improved, and the surface modification properties of the thin film, such as hydrophobicity or hydrophilicity, can be improved, thereby improving the uniformity of the entire thin film.

[0083] Figure 5 is a process flow chart showing a substrate processing method according to another embodiment of the present disclosure.

[0084] According to another embodiment of the present disclosure, a substrate processing method processes a substrate by using a substrate processing device, wherein the substrate processing device includes: a chamber including a first space and a second space that does not overlap with the first space; a rotatable base configured to support one or more substrates in the first space and the second space; a first injection unit facing the base and configured to inject gas into the first space; and a second injection unit facing the base and configured to inject gas into the first space. Figure 5 The substrate processing method includes a substrate setting step S510 and a thin film forming step S520.

[0085] The substrate setting step S510 includes setting one or more first substrates under a first spray unit and one or more second substrates under a second spray unit. The first spray unit faces a susceptor arranged in the chamber across the first space and the second space and sprays two or more different gases into the first space, while the second spray unit faces the susceptor and sprays two or more different gases into the second space.

[0086] The thin film forming step S520 includes repeating one or more times the process of sequentially spraying the raw material gas and the reaction gas toward the first substrate and the second substrate through the first spray unit and the second spray unit, respectively, to form a thin film with a predetermined thickness.

[0087] At this time, the thin film forming step S520 may further include injecting the raw material gas through a first gas injection flow channel, and injecting the reaction gas through a second gas injection flow channel different from the first gas injection flow channel.

[0088] In the injection of the raw material gas, the raw material gas may be injected through a first gas injection flow channel formed in the protruding electrode of the first electrode. In the injection of the reaction gas, the reaction gas may be injected through a second gas injection flow channel between an inner surface of an opening formed at a position corresponding to the protruding electrode of the second electrode and a side surface of the protruding electrode.

[0089] When the inner space of the chamber 1100 is divided into two spaces, namely, the first space A1 and the second space A2, and the third space A3 is set as the boundary therebetween, the susceptor 1300 may be rotated 180 degrees in the first susceptor rotating step S430. However, the rotation angle of the susceptor may be set to various angles, such as 90°, 180°, 270°, and other angles, depending on the number of divided spaces and process conditions.

[0090] In this way, a first thin film and a second thin film are sequentially formed on the first substrate W1, and a second thin film and a first thin film are sequentially formed on the second substrate W2. This process can improve the uniformity of thin films deposited on multiple substrates.

[0091] When the susceptor rotates only in the same direction in the first susceptor rotating step S430 and the second susceptor rotating step S450, there is a difference between the time during which the substrate adjacent to the purge gas injection unit is exposed to the purge gas injection unit and the time during which the substrate not adjacent to the purge gas injection unit is exposed to the purge gas injection unit.

[0092] That is, when the rotation direction of the susceptor is fixed in one direction, the substrate adjacent to the purge gas injection unit based on the rotation direction of the susceptor always passes through the purge gas injection unit earlier than the substrate not adjacent to the purge gas injection unit based on the rotation direction of the susceptor. Therefore, before the substrate passes through the purge area sprayed with the purge gas, the time during which the substrate not adjacent to the purge gas injection unit based on the rotation direction of the susceptor is exposed to the first space or the second space for forming a thin film is longer than the substrate adjacent to the purge gas injection unit based on the rotation direction of the susceptor. For this reason, the uniformity of the thin films deposited on the plurality of substrates may be reduced.

[0093] Therefore, when the susceptor is rotated in one direction in the first susceptor rotating step S430, the susceptor may be alternately rotated in another direction in the second susceptor rotating step S450. When thin films are formed on a plurality of substrates a predetermined number of times (e.g., N times), the susceptor may be rotated N / 2 times in one direction and N / 2 times in another direction, which can improve uniformity of thin films deposited on the plurality of substrates.

[0094] Generally speaking, the reaction space inside the chamber may be formed asymmetrically. As described above, the heater member for heating the substrate may be concentrically disposed below the susceptor, and the power supply terminal may be formed at a plurality of locations.

[0095] Thus, the uniformity of the thin film deposited on the substrates located in the first space A1 and the second space A2 may be changed by the structural problem inside the chamber or the influence of the power supply terminal of the heater formed under the susceptor.

[0096] Therefore, the embodiments of the present disclosure can minimize the structural problems inside the chamber or the influence of the power supply terminal, thereby improving the uniformity of the thin film deposited on the substrate located in the first space A1 and the second space A2.

[0097] According to the substrate processing method according to the embodiment of the present disclosure, a first film and a second film having a predetermined thickness can be formed on the substrates W1 and W2 located in the first space A1 and the second space A1, respectively, thereby improving the uniformity of the films deposited on the first substrate W1 and the second substrate W2.

[0098] Although various embodiments have been described above, those skilled in the art will appreciate that the embodiments are merely examples, and therefore, the disclosure described herein should not be limited based on the embodiments.

Claims

1. A cavity, comprising a first space and a second space that does not overlap with the first space; a rotatable base disposed across the first space and the second space in the chamber and configured to support one or more substrates in the first space and one or more substrates in the second space; a first injection unit, facing the base in the first space and configured to inject two or more different gases into the first space; as well as a second injection unit, facing the base in the second space and configured to inject two or more different gases into the second space; The first spray unit and the second spray unit each include: A first gas injection channel configured to inject a first gas; and A second gas injection channel is configured to inject a second gas different from the first gas, wherein the first ejection unit or the second ejection unit comprises a first electrode and a second electrode having an opening, wherein the first electrode has a plurality of protruding electrodes formed thereon, and the opening of the second electrode is formed at a position corresponding to the protruding electrode so that the protruding electrode is inserted into the opening; wherein the first gas is injected through the first gas injection channel extending to the protruding electrode, and the second gas is injected through the space between the side surface of the protruding electrode and the inner surface of the opening of the second electrode; and Wherein, RF power is applied to at least one of the first electrode or the second electrode to generate plasma between the side surface of the protruding electrode and the inner surface of the opening of the second electrode. 2 . The substrate processing apparatus of claim 1 , wherein at least one of the first spray unit and the second spray unit forms a thin film on the substrate by alternately spraying the first gas and the second gas into the first space or the second space. 3 . The substrate treating apparatus of claim 2 , wherein the susceptor is stopped when the first gas or the second gas is sprayed. 4 . The substrate processing apparatus according to claim 2 , wherein after the first gas or the second gas is injected, a purge gas is injected through any one of the first gas injection flow path and the second gas injection flow path. 5 . The substrate processing apparatus of claim 2 , wherein the first gas or the second gas is sprayed toward the substrate in a plasma state. The substrate processing apparatus of claim 5 , wherein the second gas is a reaction gas.

7. The substrate processing apparatus of claim 4, wherein the purge gas comprises: a first purge gas injected during a period between a time point when the first gas is injected and a time point when the second gas is injected; as well as a second purge gas injected during a period between a time point when the second gas is injected and a time point when the first gas is injected; At least one of the first purge gas and the second purge gas is sprayed toward the substrate in a plasma state. 8 . The substrate processing apparatus of claim 7 , wherein the first gas or the second gas is sprayed toward the substrate in a plasma state.

9. The substrate processing apparatus according to claim 2, wherein the chamber further comprises a third space between the first space and the second space, The third space includes a third spray unit, and the third spray unit is configured to spray a third purge gas toward the susceptor. 10 . The substrate treating apparatus of claim 9 , wherein the third purge gas is sprayed toward the substrate in a plasma state. 11 . The substrate treating apparatus of claim 10 , wherein the third spray unit comprises an electrode configured to spray the third purge gas toward the substrate in a plasma state.

12. The substrate processing apparatus according to claim 10, wherein the electrode comprises a third electrode having a protruding electrode formed thereon, and a fourth electrode having an opening formed at a position corresponding to the protruding electrode so that the protruding electrode is inserted into the opening, and RF power is applied to at least one of the third electrode or the fourth electrode to generate plasma between the side surface of the protruding electrode and the inner surface of the opening of the fourth electrode.

13. The substrate processing apparatus according to any one of claims 2, 5, 7, 8 to 10, wherein the thin film formed on the substrate is subjected to plasma treatment. 14 . The substrate processing apparatus of claim 1 , further comprising a heater installed under the susceptor and comprising a plurality of power supply terminals and a plurality of heater members formed in a predetermined pattern. 15 . The substrate processing apparatus of claim 14 , wherein the power supply terminal formed in the first space and the power supply terminal formed in the second space are asymmetrically disposed.

16. A substrate processing method, comprising processing a substrate by using a substrate processing apparatus, the substrate processing apparatus comprising: A cavity, comprising a first space and a second space that does not overlap with the first space; a rotatable base configured to support one or more substrates in the first space and the second space; a first injection unit, facing the base and configured to inject gas into the first space; and a second injection unit facing the base and configured to inject gas into the second space; wherein the first injection unit or the second injection unit includes a first electrode and a second electrode having an opening, wherein the first electrode has a plurality of protruding electrodes formed thereon, and the opening of the second electrode is formed at a position corresponding to the protruding electrode so that the protruding electrode is inserted into the opening; wherein the first gas is injected through the first gas injection flow channel extending to the protruding electrode, and the second gas is injected through the space between the side surface of the protruding electrode and the inner surface of the opening of the second electrode; and wherein RF power is applied to at least one of the first electrode or the second electrode to generate plasma between the side surface of the protruding electrode and the inner surface of the opening of the second electrode, the substrate processing method comprising: a substrate arrangement step of arranging one or more first substrates and one or more second substrates under the first spray unit and the second spray unit, respectively, wherein the first spray unit faces the susceptor arranged in the chamber across the first space and the second space, and sprays two or more different gases into the first space, and the second spray unit faces the susceptor, and sprays two or more different gases into the second space; A first thin film forming step is repeated once or multiple times to sequentially spray the raw material gas and the reaction gas onto the first substrate and the second substrate through the first spray unit and the second spray unit respectively; a first susceptor rotating step of rotating the susceptor by a predetermined angle so that the first substrate moves to below the second spray unit and the second substrate moves to below the first spray unit; and The second thin film forming step repeats one or more times the process of sequentially spraying the raw material gas and the reaction gas toward the second substrate and the first substrate through the first spray unit and the second spray unit respectively. 17 . The substrate processing method according to claim 16 , wherein at least one of the reaction gas of the first spray unit and the reaction gas of the second spray unit is sprayed toward the substrate in a plasma state. 18 . The substrate processing method of claim 16 , wherein the susceptor is stopped when the raw material gas or the reaction gas is sprayed.

19. The substrate processing method according to claim 16, further comprising: a second base rotating step, after the second thin film forming step, rotating the base by a predetermined angle so that the first substrate is moved below the first spray unit and the second substrate is moved below the second spray unit, The first film forming step, the first base rotating step, the second film forming step and the second base rotating step are repeated alternately until a film with a predetermined thickness is formed.

20. The substrate processing method according to claim 16, wherein a purge gas is further injected during a period between a time point of injecting the raw material gas and a time point of injecting the reaction gas, or during a period between a time point of injecting the reaction gas and a time point of injecting the raw material gas.

21. The substrate processing method according to claim 20, wherein the purge gas comprises: a first purge gas injected during the period between a time point of injecting the raw material gas and a time point of injecting the reaction gas; as well as a second purge gas injected during the period between a time point of injecting the reaction gas and a time point of injecting the raw material gas, At least one of the first purge gas and the second purge gas is sprayed toward the substrate in a plasma state. 22 . The substrate processing method according to claim 21 , wherein the raw material gas or the reaction gas is sprayed toward the substrate in a plasma state.

23. The substrate processing method according to claim 16, wherein the chamber further comprises a third space between the first space and the second space, and the third space comprises a third spray unit, and the third spray unit is configured to spray a third purge gas toward the susceptor, In the first susceptor rotating step, the third spraying unit sprays the third purge gas toward the susceptor.

24. The substrate processing method according to claim 19, wherein the chamber further comprises a third space between the first space and the second space, and the third space comprises a third spray unit, and the third spray unit is configured to spray a third purge gas toward the susceptor, In the first susceptor rotating step or the second susceptor rotating step, the third spraying unit sprays the third purge gas toward the susceptor. 25 . The substrate processing method according to claim 23 , wherein the third purge gas is sprayed toward the substrate in a plasma state.

26. The substrate processing method according to any one of claims 16, 17, 21, 22, 23 and 24, wherein the thin film formed on the substrate is subjected to plasma treatment.

27. The substrate processing method according to claim 25, wherein the thin film formed on the substrate is subjected to plasma treatment.

28. The substrate processing method according to claim 20 or 21, wherein the chamber further comprises a third space between the first space and the second space, The third space includes a third injection unit configured to inject a third purge gas toward the base. When the raw material gas or the reaction gas is injected, the third injection unit injects the third purge gas toward the susceptor.

29. The substrate processing method according to claim 28, wherein the thin film formed on the substrate is subjected to plasma treatment. 30 . The substrate processing method according to claim 28 , wherein the third purge gas is sprayed toward the substrate in a plasma state.

31. The substrate processing method according to claim 30, wherein the thin film formed on the substrate is subjected to plasma treatment.

32. A substrate processing method, comprising processing a substrate by using a substrate processing device, the substrate processing device comprising: A cavity, comprising a first space and a second space that does not overlap with the first space; a rotatable base configured to support one or more substrates in the first space and the second space; a first injection unit, facing the base and configured to inject gas into the first space; and a second injection unit facing the base and configured to inject gas into the second space; wherein the first injection unit or the second injection unit includes a first electrode and a second electrode having an opening, wherein the first electrode has a plurality of protruding electrodes formed thereon, and the opening of the second electrode is formed at a position corresponding to the protruding electrode so that the protruding electrode is inserted into the opening; wherein the first gas is injected through the first gas injection flow channel extending to the protruding electrode, and the second gas is injected through the space between the side surface of the protruding electrode and the inner surface of the opening of the second electrode; and wherein RF power is applied to at least one of the first electrode or the second electrode to generate plasma between the side surface of the protruding electrode and the inner surface of the opening of the second electrode, the substrate processing method comprising: a substrate disposing step of disposing one or more first substrates and one or more second substrates respectively under the first spraying unit and the second spraying unit, wherein the first spraying unit faces the susceptor disposed in the chamber across the first space and the second space, and sprays two or more different gases into the first space, and the second spraying unit faces the susceptor disposed in the chamber across the first space and the second space, and sprays two or more different gases into the second space; and The thin film forming step is repeated once or multiple times to sequentially spray the raw material gas and the reaction gas onto the first substrate and the second substrate through the first spray unit and the second spray unit, respectively. The film forming step comprises: injecting the raw material gas through a first gas injection channel; and The reaction gas is injected through a second gas injection flow channel different from the first gas injection flow channel. 33 . The substrate processing method of claim 32 , wherein the injecting of the raw material gas further comprises injecting the raw material gas through the first gas injection channel formed in a protruding electrode of the first electrode.

34. A substrate processing method as described in claim 33, wherein the injection of the reaction gas also includes injecting the reaction gas through a second gas injection flow channel between the side surface of the protruding electrode and the inner surface of the opening of the second electrode, and the opening is formed at a position corresponding to the protruding electrode.

35. The substrate processing method according to claim 32, wherein the chamber further comprises a third space between the first space and the second space, and the third space comprises a third spray unit, and the third spray unit is configured to spray a third purge gas toward the susceptor, When the raw material gas or the reaction gas is injected in the thin film forming step, the third injection unit injects the third purge gas toward the susceptor. 36 . The substrate processing method according to claim 35 , wherein the third purge gas is sprayed toward the susceptor in a plasma state.

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