Substrate drying apparatus and substrate processing apparatus

Abstract

A substrate drying apparatus and a substrate processing apparatus capable of reducing occurrence of pattern occlusion are provided. A substrate drying apparatus (300) according to an embodiment of the present application includes a heating section (32) that heats a substrate (W); a drying chamber (31) into which the substrate (W) in a state where a liquid film formed by a processing liquid is formed on a processing surface is carried in; a support section (34) that receives the substrate (W) carried into the drying chamber (31) at a standby position (D) away from the heating section (32); and a drive mechanism (35) that moves the substrate (W) supported on the support section (34) while rotating the substrate (W) toward a drying position (U) close to the heating section (32), and discharges the liquid film in which an air layer is generated between the substrate (W) itself and the substrate (W) heated by the heating section (32) by centrifugal force caused by the rotation of the substrate (W).

Description

Technical Field

[0001] The invention relates to a substrate drying device and a substrate processing device. Background Art

[0002] In the manufacturing processes of semiconductors and liquid crystal panels, substrate processing equipment is used. Processing liquid is supplied to the surface of a substrate, such as a wafer or liquid crystal substrate, to treat the surface, and the surface is then cleaned and dried. During the drying process in these substrate processing equipment, patterns such as those around memory cells and gates may collapse and become blocked due to factors such as the spacing and structure between patterns, and the surface tension of the processing liquid. This trend has increased in recent years with the miniaturization associated with higher integration and higher capacity semiconductors.

[0003] To prevent the aforementioned pattern collapse, a substrate drying method has been proposed that uses isopropyl alcohol (IPA) (2-propanol: isopropyl alcohol), which has a lower surface tension than ultrapure water. This substrate drying method replaces the deionized water (DIW) on the substrate surface with a mixture of IPA and DIW (see Patent Document 1).

[0004] [Prior art literature]

[0005] [Patent Document]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-034779 Summary of the Invention

[0007] [Problems to be solved by the invention]

[0008] However, as semiconductors become increasingly miniaturized, even when drying is performed using a highly volatile organic solvent such as IPA, the fine pattern on the wafer may collapse due to the surface tension of the liquid.

[0009] For example, if the drying rate of the substrate surface becomes uneven during the liquid drying process, leaving liquid between some patterns, the surface tension of this liquid can cause the patterns to collapse. Specifically, the patterns in the areas where the liquid remains collapse due to elastic deformation caused by the liquid's surface tension, causing some residue dissolved in the liquid to accumulate. Subsequently, when the liquid completely evaporates, the collapsed patterns become fixed.

[0010] An object of the present invention is to provide a substrate drying device and a substrate processing device capable of reducing the occurrence of pattern occlusion.

[0011] [Technical means to solve the problem]

[0012] The substrate drying device of the present invention comprises: a heating portion for heating a substrate; a drying chamber for accommodating the heating portion and for carrying in the substrate in a state where a liquid film formed by a processing liquid is formed on a processed surface; a supporting portion for receiving the substrate carried into the drying chamber at a standby position away from the heating portion; and a driving mechanism for rotating the substrate supported on the supporting portion while moving it toward a drying position close to the heating portion, so that the centrifugal force brought about by the rotation of the substrate causes the liquid film that has formed an air layer between the substrate and the substrate heated by the heating portion to be discharged.

[0013] The substrate processing device of the present invention comprises: a processing device for processing by rotating the substrate while supplying a processing liquid; a cleaning device for cleaning by rotating the processed substrate while supplying a processing liquid; the substrate drying device; and a conveying device for conveying the substrate cleaned in the cleaning device out of the substrate in a state where a liquid film formed by the cleaning liquid is formed and conveying it into the substrate drying device.

[0014] [Effects of the Invention]

[0015] The present invention can provide a substrate drying device and a substrate processing device capable of reducing the occurrence of pattern occlusion. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 FIG. 1 is a schematic structural diagram of a substrate processing apparatus according to an embodiment.

[0017] Figure 2 To express Figure 1 Structural diagram of the cleaning device and drying device of the substrate processing device.

[0018] Figure 3 (A) Figure 3 (B) is a diagram showing the internal structure of the drying device when the substrate is loaded (A) and when the film thickness is measured (B).

[0019] Figure 4 (A) Figure 4 (B) is a diagram showing the internal structure of the drying device when the cleaning liquid is supplied (A) and when the substrate is on standby (B).

[0020] Figure 5 (A) Figure 5 (B) is a diagram showing the internal structure of the drying device when the substrate is drying (A) and when the substrate is lowered (B).

[0021] Figure 6 Flowchart showing the procedure of substrate drying process according to the embodiment.

[0022] Figure 7(A) Figure 7 (B) Figure 7 (C) Figure 7 (D) Figure 7 (E) is an explanatory diagram showing the flow of a drying process using the Leidenfrost phenomenon.

[0023] Figure 8 This is a structural diagram showing a modified example in which a plurality of drying positions are provided.

[0024] [Explanation of Symbols]

[0025] 1: Substrate processing equipment

[0026] 11: Cleaning room

[0027] 11a: Opening

[0028] 11b: Door

[0029] 12: Support part

[0030] 13: Rotating mechanism

[0031] 14: Shield

[0032] 15: Supply Department

[0033] 15a: Nozzle

[0034] 15b: Mobile mechanism

[0035] 20: Transport device

[0036] 21: Robotic Arm

[0037] 22: Mobile mechanism

[0038] 31: Drying room

[0039] 31a: Opening

[0040] 31b: Door

[0041] 32: Heating unit

[0042] 32a: Light

[0043] 33: Window

[0044] 34: Support part

[0045] 34a: Rotating table

[0046] 34b: Retaining member

[0047] 34c: Rotation axis

[0048] 35: Driving mechanism

[0049] 35a: Rotating part

[0050] 35b: Lifting part

[0051] 36: Shield

[0052] 37: Measurement Department

[0053] 37a: Detection Department

[0054] 37b: Swinging Arm

[0055] 37c: Swinging mechanism

[0056] 38: Supply Department

[0057] 38a: Nozzle

[0058] 38b: Swing arm

[0059] 38c: Swing mechanism

[0060] 41: Organization Control Department

[0061] 42: Film thickness analysis department

[0062] 43: Heating control unit

[0063] 100: Cleaning device

[0064] 200: Transport device

[0065] 300: Drying device

[0066] 400: Control device

[0067] D: Standby position

[0068] E: Upper edge of opening 31a

[0069] G: Air layer

[0070] L: cleaning liquid

[0071] P: Pattern

[0072] S: Processing device

[0073] U, U1, U2: Dry position

[0074] W: substrate DETAILED DESCRIPTION

[0075] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0076] [summary]

[0077] The substrate processing apparatus of the embodiment includes processing chambers that perform a plurality of processes, and is a single-wafer processing apparatus that performs processing on each of a plurality of substrates one by one in the processing chambers, the substrates being carried into a wafer cassette (Front Opening Unified Pod (FOUP)) in a previous process.

[0078] As shown in Figure 1 , the substrate processing apparatus 1 includes a processing apparatus S, a cleaning apparatus 100, a carrying apparatus 200, a drying apparatus 300, and a control apparatus 400. The processing apparatus S is, for example, an etching apparatus that removes an unnecessary film to leave a circuit pattern by supplying a processing liquid to a rotating substrate W. The cleaning apparatus 100 cleans the substrate W after the etching processing by the etching apparatus with a cleaning liquid. The carrying apparatus 200 carries the substrate W between the processing chambers. The drying apparatus (substrate drying apparatus) 300 performs a drying process by rotating the substrate W after the cleaning with the cleaning liquid and heating the substrate W. The control apparatus 400 controls the respective apparatuses.

[0079] Further, the substrate W processed by the embodiment is, for example, a semiconductor wafer. As a processing liquid for the cleaning process, an alkaline cleaning liquid (Ammonia Peroxide Mixture (APM)), DIW (ultra-pure water), or IPA (2-propanol: isopropyl alcohol) is used. The surface tension of IPA is smaller than that of ultra-pure water, and the volatility of IPA is higher.

[0080] [Cleaning Apparatus]

[0081] As shown in Figure 2 , the cleaning apparatus 100 includes a cleaning chamber 11 that performs a cleaning process inside, a support portion 12 that supports the substrate W, a rotating mechanism 13 that rotates the support portion 12, a shield 14 that shields the cleaning liquid L scattered from the periphery of the substrate W, and a supply portion 15 that supplies the cleaning liquid L. The supply portion 15 is provided with a nozzle 15a that drops the cleaning liquid L, and a moving mechanism 15b that moves the nozzle 15a.

[0082] The cleaning liquid L is supplied from the nozzle 15a to a processed surface of the substrate W supported on the support portion 12 and rotated by the rotating mechanism 13, and thus the cleaning process is performed. In the cleaning process, DIW cleaning is performed after APM cleaning. Further, IPA is supplied after the DIW cleaning. The cleaning chamber 11 is provided with an opening 11a through which the substrate W is carried in and out, and the opening 11a is configured to be opened and closed by a door 11b.

[0083] [Carrying Apparatus]

[0084] The transport device 200 includes a transport device 20. The transport device 20 includes a robot arm 21 for gripping a substrate W and a moving mechanism 22. The robot arm 21 grips the substrate W. The moving mechanism 22 moves the robot arm 21 to remove the substrate W after etching from the processing apparatus S and to carry it to the cleaning apparatus 100 while still having a liquid film (DIW film) formed thereon. Furthermore, the moving mechanism 22 moves the robot arm 21 to remove the substrate W after cleaning from the cleaning apparatus 100 and to carry it to the drying apparatus 300 while still having a liquid film (DIW film or IPA film) formed thereon.

[0085] [Drying device]

[0086] like Figure 2 As shown, the drying apparatus 300 includes a drying chamber 31, a heating unit 32, a window 33, a support unit 34, a drive mechanism 35, a shield 36, a measuring unit 37, and a supply unit 38. The drying chamber 31 is a container for drying substrates W. The drying chamber 31 is shaped like a box, such as a rectangular parallelepiped or a cube. To improve dust resistance, the inner walls of the drying chamber 31 are coated with silica. The drying chamber 31 is provided with an opening 31a for carrying substrates W in and out. The opening 31a is configured to be openable and closable via a door 31b.

[0087] The heating section 32 is a device for heating the substrate W. The heating section 32 is provided in the upper part of the drying chamber 31. The heating section 32 has lamps 32a such as halogen lamps and infrared lamps. The lamps 32a of this embodiment are straight tube-shaped, and a plurality of lamps 32a arranged in parallel with each other in a horizontal state are arranged in a manner of overlapping into two layers, with the directions of the first layer of lamps 32a and the second layer of lamps 32a being orthogonal to each other, forming a grid shape as a whole. Thus, the heating is uniformly configured. Furthermore, the heating section 32 uses electromagnetic waves (infrared rays) of a wavelength that is easier to heat the substrate W itself than the cleaning liquid L itself, thereby promoting the generation of a hot gas layer originating from the substrate W.

[0088] The window 33 is a member that transmits electromagnetic waves from the heating section 32. A plate-like member such as quartz can be used as the window 33. The window 33 is located directly below the heating section 32 in the drying chamber 31, separating the heating section 32 from the support section 34. This prevents particles generated by the expansion and contraction of the connector portion of the lamp 32a due to repeated lighting of the lamp 32a from adhering to the substrate W from above and causing metal contamination.

[0089] The support portion 34 supports the substrate W. The support portion 34 includes a rotating table 34a, a plurality of holding members 34b, and a rotating shaft 34c. The rotating table 34a is cylindrical in shape with a diameter larger than that of the substrate W, and its upper surface is flat and circular. The plurality of holding members 34b are arranged at equal intervals along the outer periphery of the substrate W, and maintain the substrate W in a horizontal state with a gap between them and the upper surface of the rotating table 34a. The plurality of holding members 34b are arranged so as to be movable between a closed position in contact with the edge of the substrate W and an open position away from the edge of the substrate W by an opening and closing mechanism (not shown). The rotating shaft 34c is a vertical axis that supports the rotating table 34a from below and serves as the center of rotation.

[0090] The drive mechanism 35 rotates and elevates the substrate W supported by the support portion 34. The drive mechanism 35 includes a rotating portion 35a and an elevating portion 35b. The rotating portion 35a has a drive source such as a motor and rotates the support portion 34 via a rotation shaft 34c. The elevating portion 35b includes a drive mechanism that raises and lowers a slider using a ball screw driven by a motor. The elevating portion 35b causes the support portion 34 to move up and down together with the rotating portion 35a.

[0091] In this embodiment, the support unit 34 has two positions, a standby position D and a drying position U, which are controlled by the drive mechanism 35. The standby position D is a position away from the heating unit 32 where the substrate W, which has been loaded into the drying chamber 31 with a film of cleaning liquid L formed on it, is received. More specifically, the standby position D is located lower than the detection unit 37a and nozzle 38a, described later. The reason for receiving and supporting the substrate W at this position away from the heating unit 32 is as follows. Even if the lamp 32a is only illuminated during the drying process, heat is accumulated in the quartz window 33, which has poor thermal conductivity, reaching a temperature at which the cleaning liquid L evaporates. Repeated drying processes, in particular, increase the heat accumulation in the window 33. When a substrate W with a film of cleaning liquid L formed on it is loaded under these conditions, radiant heat causes the film on the substrate W to begin evaporating. However, the entire film does not evaporate instantaneously, but rather partially evaporates, resulting in uneven drying. This causes pattern occlusion due to the surface tension of the remaining cleaning liquid L. Therefore, it is necessary to support the substrate W at a position away from the heating section 32 to avoid being affected by such radiant heat. Therefore, the standby position D is a position away from the window 33 until there is no risk (less thermal influence) that the processing liquid (the processing liquid at the time of being brought into the drying chamber 31) covering the processed surface of the substrate W will evaporate under the radiant heat of the window 33, which has been repeatedly heated and stored by the heating section 32. The drying position U is a position close to the heating section 32 so that an air layer is generated between the substrate W and the liquid film after being heated by the heating section 32. In this embodiment, the standby position D is below the upper edge E of the opening 31a, and the drying position U is above the upper edge E of the opening 31a.

[0092] The shield 36 is formed into a cylindrical shape so as to surround the support portion 34 from the periphery (see Figure 2 The upper portion of the peripheral wall of the shield 36 is inclined radially inward and is open so that the substrate W on the support portion 34 is exposed. The shield 36 receives the cleaning liquid L scattered from the rotating substrate W and allows it to flow downward. An outlet (not shown) for discharging the flowing cleaning liquid L is formed on the bottom surface of the shield 36. Furthermore, the shield 36 is connected to the drive mechanism 35 and is configured to be able to rise and fall together with the support portion 34.

[0093] The measuring unit 37 measures the thickness of the liquid film on the substrate W that has been brought into the drying chamber 31 and is in the standby position D. The measuring unit 37 includes a detection unit 37a, a swing arm 37b, and a swing mechanism 37c. The detection unit 37a may be, for example, a laser displacement meter or a camera. The swing arm 37b has the detection unit 37a at its tip, and moves the detection unit 37a to a measurement position where the detection unit 37a faces the center of the substrate W on the support 34, near the center between the center and the outer periphery of the processed surface. The standby position D is a position that is retracted from the measurement position to allow the substrate W to be brought in or out. The swing mechanism 37c swings the swing arm 37b.

[0094] The film thickness measurement method employed by the measuring unit 37 may utilize, for example, the principle of optical interference. Furthermore, as another example, a weight meter may be employed within the support unit 34. When such a weight meter is employed, the weight of the liquid film on the substrate W (weight of the liquid film = weight of the substrate including the liquid film - weight of the substrate) is converted into the thickness of the liquid film theoretically or experimentally.

[0095] The supply unit 38 supplies cleaning liquid L onto a substrate W that has been loaded into the drying chamber 31 and is in the standby position D. The supply unit 38 includes a nozzle 38a, a swing arm 38b, and a swing mechanism 38c. The nozzle 38a supplies the cleaning liquid L toward the vicinity of the center of the processed surface of the substrate W. The cleaning liquid L is supplied to the nozzle 38a from a reservoir outside the drying chamber 31 via a pipe (not shown).

[0096] The type of cleaning liquid L supplied by the supply unit 38 depends on the type of liquid that ultimately covers the substrate W during the cleaning process in the cleaning apparatus 100 due to the rinse process after the alkaline clean. Specifically, if the rinse process ends with DIW, the substrate W is transported from the cleaning apparatus 100 to the drying apparatus 300 while already covered with DIW. In the case of DIW, the supply unit 38 supplies DIW. If DIW is ultimately replaced with IPA, the substrate W is transported from the cleaning apparatus 100 to the drying apparatus 300 while already covered with IPA. Because IPA evaporates during transport or absorbs moisture from the atmosphere during transport, the supply unit 38 resupplies IPA.

[0097] The swing arm 38b has a nozzle 38a at its tip, which moves the nozzle 38a between a supply position facing approximately the center of the processed surface of the substrate W on the support unit 34 and a retreat position, which is a position retreated from the supply position to allow the substrate W to be loaded or unloaded. The swing mechanism 38c swings the swing arm 38b. Furthermore, the drying position U is located above the supply unit 38, which supplies the cleaning liquid L to the substrate W at the supply position.

[0098] [Control device]

[0099] The control device 400 is a computer that controls each component of the substrate processing apparatus 1. The control device 400 includes a processor, memory, and driver circuits. The processor executes programs, the memory stores programs, operating conditions, and other information, and the driver circuits drive each component. Specifically, the control device 400 controls the processing apparatus S, the cleaning apparatus 100, the transport apparatus 200, and the drying apparatus 300. Furthermore, the control device 400 includes an input device for inputting information and a display device for displaying information.

[0100] The control device 400 includes a mechanism control unit 41, a film thickness analysis unit 42, and a heating control unit 43. The mechanism control unit 41 controls the mechanisms of each unit. For example, the mechanism control unit 41 controls the rotation speed, start time, and stop time of the support unit 34 by controlling the rotating unit 35a of the drive mechanism 35. Furthermore, the mechanism control unit 41 controls the distance (gap) between the heating unit 32 and the support unit 34 by controlling the lifting unit 35b of the drive mechanism 35. More specifically, the control device 400 holds the substrate W on the support unit 34 at the standby position D, then adjusts the film thickness of the cleaning liquid L film covering the processed surface of the substrate W, rotates the substrate W while raising it to the drying position U, and illuminates the lamp 32a to dry it for a specified time. Thereafter, the control device 400 descends to the standby position D while maintaining the rotation of the substrate W. Furthermore, the control device 400 controls the oscillation of the nozzle 38a, the discharge of the cleaning liquid L, the oscillation of the detection unit 37a, and other operations such as measurement.

[0101] The film thickness analysis unit 42 analyzes the thickness of the liquid film of the cleaning liquid L measured by the measuring unit 37. The film thickness analysis unit 42 determines whether the thickness of the liquid film of the cleaning liquid L measured by the measuring unit 37 (liquid film thickness value) is within the range of a specified threshold value. Then, when the film thickness analysis unit 42 determines that the thickness of the liquid film is within the range of a specified threshold value, it deems that the thickness of the liquid film is appropriate, and thus sends a permission signal for permitting the rotation and rise of the substrate W to the mechanism control unit 41. When the mechanism control unit 41 receives the permission signal, it sends a signal to the drive mechanism 35 to instruct the support unit 34 to rotate and rise. Furthermore, regarding the appropriate film thickness, in the case of DIW, it is, for example, less than 10μm, and in the case of IPA, it is, for example, less than 100μm. These film thicknesses are liquid film thicknesses of a degree that will not evaporate from the substrate W when close to the heating unit 32 (close to the window portion 33), and are liquid film thicknesses that can be dried well by a drying process based on the Leidenfrost phenomenon. However, these values ​​are examples, and the actual appropriate liquid film thickness can be determined in advance through experiments, etc. In addition, the rotation speed of the substrate W is, for example, about 200 rpm to 300 rpm. Even if the liquid film is adjusted, the liquid film thickness can be maintained at a predetermined thickness within this rotation speed range.

[0102] (Heating control executed from the drying position)

[0103] The heating control unit 43 controls the heating unit 32 based on commands from the mechanism control unit 41. When the support unit 34 reaches the drying position U and stops, the heating control unit 43 controls the heating unit 32 to heat the processing surface of the substrate W on the support unit 34. The heating unit 32 is controlled to illuminate the lamp 32a for a few seconds, thereby rapidly heating the processing surface of the substrate W to a temperature above the Leidenfrost temperature (the temperature at which the Leidenfrost phenomenon occurs), thereby causing the cleaning liquid L on the processing surface of the substrate W to form beads.

[0104] If the film thickness analyzer 42 determines that the measured thickness of the cleaning liquid L film is thinner than the lower limit of a predetermined threshold range, the film is deemed too thin and, through the mechanism control unit 41, outputs a supply instruction for the processing liquid (cleaning liquid L) to the supply unit 38. Consequently, a predetermined amount of cleaning liquid L is supplied from the nozzle 38a to the processing surface of the substrate W (for a predetermined time period) to bring the film thickness within the predetermined threshold range. Drying is then performed as described above, while the substrate W is rotated and raised. While replenishing the cleaning liquid L, the substrate W may be stopped without rotating, or it may be rotated.

[0105] If the film thickness analyzer 42 determines that the measured thickness of the cleaning liquid L film is thicker than the upper limit of a predetermined threshold range, the film is deemed excessively thick and the mechanism control unit 41 outputs a rotation instruction to the drive mechanism 35 to the support unit 34. Consequently, the cleaning liquid L on the substrate W, which rotates along with the support unit 34, is dispersed by centrifugal force, bringing the film thickness within the predetermined threshold range. Drying is then performed as described above, with the substrate W rotating and ascending.

[0106] [action]

[0107] In addition to the Figure 1 and Figure 2 In addition, refer to Figure 3 (A) Figure 3 (B)~ Figure 5 (A) Figure 5 (B) illustration, Figure 6 Flowchart, Figure 7 (A) Figure 7 (B) Figure 7 (C) Figure 7 (D) Figure 7 The operation of the substrate processing apparatus 1 according to the present embodiment described above will be described with reference to the operation explanatory diagram (E). Furthermore, a substrate processing method for processing a substrate W according to the following procedure is also one aspect of the present embodiment.

[0108] like Figure 1 As shown, the substrate W after the etching process in the processing device S is carried into the cleaning device 100 by the conveying device 200. In the cleaning device 100, while the support part 12 holding the substrate W rotates, the supply part 15 supplies APM to the processed surface of the substrate W for alkaline cleaning, and then supplies DIW for pure water cleaning. In addition, after the pure water cleaning is completed, IPA is supplied to the processed surface of the substrate W. Thus, the DIW covering the processed surface of the substrate W is replaced with IPA. The conveying device 200 carries the cleaned substrate W out of the cleaning device 100 and carries it into the drying device 300. Furthermore, after the pure water cleaning is completed, it is not necessary to replace the processed surface of the substrate W covered with DIW with IPA. That is, the cleaning process can also be completed by pure water cleaning under DIW alone.

[0109] like Figure 3 As shown in FIG. 1A , a substrate W is carried from the opening 31a of the drying chamber 31 of the drying device 300 with a liquid film (DIW or IPA) formed on the surface to be processed being held by the holding member 34b of the support portion 34 in the standby position D (step S01). Figure 3 As shown in FIG. 5 (B), the detection unit 37 a of the measurement unit 37 measures the film thickness on the substrate W (step S02 ).

[0110] In the case of thin film thickness (less than the specified range in step S03), Figure 4 As shown in (A), the supply unit 38 further supplies cleaning liquid L to the liquid film on the substrate W to adjust the film thickness (step S04). If the film thickness is thick (exceeding the specified range in step S03), the support unit 34 rotates to swing the cleaning liquid L from the rotating substrate W to adjust the film thickness (step S05).

[0111] When the film thickness is appropriate or becomes appropriate after adjustment (within the prescribed range of step S03), the support portion 34 moves the substrate W as shown in FIG. Figure 4 (B) as shown in FIG. 1 and FIG. 2 (step S06) while rotating as shown in FIG. Figure 5 The substrate W is then raised to the drying position U as shown in FIG. 3 (A), thereby bringing the substrate W close to the heating section 32 (step S07). By rotating the substrate W before being heated by the heating section 32, the cleaning liquid L film on the processed surface of the substrate W rotates along with the substrate W. Even after heating by the heating section 32 and an air layer is generated between the cleaning liquid film and the processed surface of the substrate W, inertial force causes the cleaning liquid L film to continue rotating, generating centrifugal force.

[0112] By lighting the lamp 32a of the heating unit 32 for a predetermined time (within a range of several seconds to more than ten seconds), the substrate W is rapidly heated to a temperature at which the Leidenfrost phenomenon occurs (above the boiling point of the cleaning liquid L). The cleaning liquid L film on the processed surface of the substrate W is floated into liquid droplets by the gas layer generated at the interface between the cleaning liquid L film on the processed surface and the substrate W, and the cleaning liquid L is thrown out by centrifugal force to achieve drying (step S08). That is, as Figure 7 As shown in (A), the cleaning liquid L that contacts the pattern P on the processed surface of the substrate W is as follows: Figure 7 As shown in (B), only the substrate W is heated instantaneously due to the lighting of the lamp 32a. As a result, the interface between the processed surface of the substrate W and the cleaning liquid L begins to vaporize earlier than the cleaning liquid L in other parts, so a gas layer, namely, a gas layer G, which is formed by the vaporization of the liquid (cleaning liquid L) is generated around the pattern P.

[0113] Therefore, if Figure 7 As shown in (C), the liquid (cleaning liquid L) between the adjacent patterns P instantly floats up from between the patterns P due to the gas layer G, and Figure 7 As shown in (D), the cleaning liquid L immediately turns into liquid droplets (Leidenfrost phenomenon). As shown by the black arrows in the figure, the cleaning liquid L is subjected to the centrifugal force brought by the rotation, and the generated liquid droplets are thrown out from the substrate W under the centrifugal force. Figure 7 As shown in (E), the processed surface of the substrate W is dried.

[0114] By causing the cleaning liquid L between the patterns P to float across the entire processed surface of the substrate W in this manner, it is possible to prevent the cleaning liquid L from remaining between certain patterns P, thereby uniformly drying the liquid on the processed surface of the substrate W. This prevents the patterns P from collapsing due to collapsing forces (e.g., surface tension) generated by the residual liquid. Furthermore, the film thickness of the cleaning liquid L on the processed surface of the substrate W is adjusted to an appropriate thickness. If the film thickness is thicker than the appropriate thickness, drying the substrate W in this state will result in stripe-like watermarks on the processed surface of the substrate W, resulting in poor drying. When the substrate W is rapidly heated, causing the processing liquid on the substrate W to form beads, the thicker the film thickness, the greater the number of beads. As the number of beads increases, the number of contact points with the processed surface of the substrate W increases until the beads are expelled from the processed surface by the centrifugal force of the rotating substrate W. The processed surface of the substrate W cools due to the heat of vaporization upon contact with the liquid droplets. Therefore, if the number of droplets is too large, even during rapid heating, portions of the processed surface of the substrate W may be left below the Leidenfrost temperature. This means that the portion is dried by normal drying rather than rapid drying. In this case, for example, traces of the liquid droplets that were discharged away from the processed surface may be left behind, resulting in liquid marks such as striped watermarks. Furthermore, due to the excessive number of droplets, some droplets of cleaning liquid L may not be discharged from the substrate W and may remain between patterns P on the processed surface of the substrate W, causing the patterns P to collapse in these areas. Therefore, by adjusting the liquid film thickness to an appropriate level that prevents the formation of liquid marks, heating the substrate W can adjust the number of droplets on the processed surface of the substrate W and thus prevent drying defects.

[0115] Afterwards, if Figure 5 As shown in FIG. 5B , the support unit 34 descends to the standby position D (step S09 ) while maintaining the rotation of the substrate W. After the support unit 34 stops rotating the substrate W (step S10 ), the transport device 200 carries the substrate W out of the opening 31 a (step S11 ).

[0116] [Effect]

[0117] (1) The drying device (substrate drying device) 300 of the present embodiment as described above comprises: a heating section 32 for heating the substrate W; a drying chamber 31 for carrying in the substrate W in a state where a liquid film of a processing liquid is formed on the processed surface; a supporting section 34 for receiving the substrate W carried into the drying chamber 31 at a standby position D away from the heating section 32; and a driving mechanism 35 for rotating the substrate W supported on the supporting section 34 while moving it toward a drying position U close to the heating section 32, so that the centrifugal force caused by the rotation of the substrate W causes the liquid film that forms an air layer between the substrate W and the substrate W heated by the heating section 32 to be discharged.

[0118] The substrate processing device 1 of this embodiment includes: a processing device S, which processes the substrate W by supplying a processing liquid while rotating the substrate W; a cleaning device 100, which cleans the processed substrate W by supplying a processing liquid while rotating the substrate W; and a conveying device 200, which carries out the substrate W cleaned in the cleaning device 100 in a state where a liquid film formed by the processing liquid is formed and carries it into the drying device 300.

[0119] Thus, when the substrate W is loaded into the drying chamber 31, it is supported at the standby position D, away from the heating section 32. This prevents heating due to radiant heat from the area surrounding the heating section 32, thereby suppressing drying. Specifically, when the substrate W, already covered with liquid, is loaded into the drying chamber 31, the support section 34, positioned at the standby position D, away from the heating section 32, receives and supports the substrate W. This prevents uneven drying of the cleaning liquid L on the processed surface of the substrate W due to radiant heat (heat storage) from the window section 33 heated by the heating section 32, which could cause watermarks or pattern collapse.

[0120] The radiant heat (heat storage temperature of the transmission window) is a temperature that dries the processing liquid on the substrate W (above the boiling point of the processing liquid). That is, the window portion 33 repeatedly heated by the heating portion 32 becomes a state higher than the temperature at which the heating portion 32 heats the substrate W. As described above, the standby position D is a position away from such a window portion 33, so it can prevent the liquid film on the substrate W from drying up due to radiant heat immediately after it is moved into the drying chamber 31, that is, ordinary drying (evaporation caused by heat). In addition, it can prevent the pattern from collapsing due to uneven drying of the entire surface and drying starting from a part of the processed surface of the substrate W. That is, it can prevent the pattern from collapsing before the liquid film is adjusted by the supply portion 28, and prevent the product from being defective before the heating portion 32 is about to perform the drying process.

[0121] Furthermore, during drying, the substrate W is rotated and moved to the drying position U, where it is heated by the heating unit 32. This allows liquid droplets floating in the air layer to be discharged, allowing for instant drying. This reduces pattern occlusion caused by uneven drying. Furthermore, since the substrate W is brought close to the heating unit 32 during drying, the power consumption of the heating unit 32 can be reduced.

[0122] (2) The drying chamber 31 is provided with an opening 31a for loading and unloading substrates W. The standby position D is located below the upper edge E of the opening 31a, and the drying position U is located above the upper edge E of the opening 31a. Therefore, when loading and unloading substrates W, the standby position D can be kept away from the heating unit 32, thereby suppressing the effects of radiant heat.

[0123] (3) It comprises: a measuring unit 37 for measuring the thickness of a liquid film on a substrate W that has been transported into the drying chamber 31 and is in a standby position D; a supply unit 38 for supplying a processing liquid to the substrate W that has been transported into the drying chamber 31 and is in a standby position D; and a control device 400 for controlling the driving mechanism 35 and the supply unit 38 based on the measurement result obtained by the measuring unit 37, thereby adjusting the thickness of the liquid film on the substrate W that is in the standby position D.

[0124] Thus, the substrate W can be dried after adjusting to an appropriate film thickness at the standby position D, where drying due to radiant heat is suppressed. If the film thickness is thin, the radiant heat from the window 33 causes uneven drying of the liquid film on the processed surface of the substrate W when the substrate W is raised from the standby position D to the drying position U, resulting in pattern collapse in some of the patterns P before the heat treatment is performed. This results in a normal drying state where the liquid film evaporates and dries under radiant heat. Furthermore, as mentioned above, with thicker film thicknesses, the number of droplets increases, increasing the number of contact points with the processed surface of the substrate W until the droplets are expelled from the processed surface by the centrifugal force of the rotating substrate W. The processed surface of the substrate W cools due to the heat of vaporization generated by the droplets during contact. Therefore, if the number of droplets is excessive, even during rapid heating, portions of the processed surface of the substrate W may be below the Leidenfrost temperature, resulting in areas that dry under normal drying rather than rapid drying. In the present embodiment, the substrate W is dried after being adjusted to an appropriate film thickness, and thus the occurrence of a dry state caused by such ordinary drying can be prevented.

[0125] (4) The drying position U is located above the supply unit 38 that supplies the processing liquid to the substrate W. Therefore, by rotating the substrate W while rising to the drying position U that is located above the supply position, centrifugal force can be applied to the liquid film in advance, so that the liquid droplets generated by the Leidenfrost phenomenon can be discharged by centrifugal force. On the other hand, in a non-rotating state, even if the substrate W is raised to the drying position U, the liquid film itself will not be subjected to centrifugal force. Therefore, when the liquid film floats from the pattern P due to the Leidenfrost phenomenon due to the heating by the heating unit 32, even if the rotation of the substrate W is started, the floated liquid film will not be subjected to centrifugal force. That is, at the interface between the liquid droplet and the processed surface of the substrate W (the state of the gas layer of the cleaning liquid L vaporized around the liquid droplet), the liquid droplet can be said to be in a floating state, and the rotational force of the substrate W will not be applied to the liquid droplet. Therefore, the liquid droplet cannot be discharged from the processed surface of the substrate W. In the present embodiment, the substrate W is raised to the drying position U located above the supply position while being rotated, so that centrifugal force is applied to the liquid film to discharge it.

[0126] (5) After the substrate W is dried at the drying position U, the drive mechanism 35 rotates the substrate W supported by the support portion 34 while moving it to the standby position D. This prevents the liquid (mist environment) floating around the substrate W immediately after being discharged from the substrate W from adhering to the substrate W again.

[0127] (Variation)

[0128] (1) Figure 8 As shown, multiple drying positions U1 and U2 may be set at different distances from the heating section 32 depending on the type of treatment liquid. For example, when IPA is included, drying position U1 is set at a longer distance from the heating section 32 due to its high volatility. When pure water alone is used, drying position U2 is set at a shorter distance from the heating section 32 because it is less volatile than IPA. The difference is, for example, approximately 10 mm. The optimal positions for drying positions U1 and U2 can be determined in advance through experiments, etc.

[0129] (2) The inner wall of the drying chamber 31 may be coated with a coating that suppresses material changes caused by the treatment liquid. Inside the drying chamber 31, droplets of the treatment liquid will fly, and water vapor caused by heating will be generated and diffused throughout the drying chamber 31. Therefore, for example, when aluminum with high reflectivity is used as the material of the drying chamber 31, it will turn into aluminum oxide and turn white due to being placed in a high temperature and steam environment for a long time. Therefore, by coating the inner wall of the drying chamber 31 with silica, which is mainly composed of silicon dioxide, it is possible to prevent material changes. This can prevent the occurrence of particulate or metal contamination.

[0130] (3) A cooling device can be provided to cool the window 33 to suppress the effects of radiant heat. For example, the quartz of the window 33 can be formed into two layers, and cooling gas can be passed between them. However, in this case, the temperature reduction is limited, so a standby position D away from the heating unit 32 must be set.

[0131] (4) As long as the processing in the processing apparatus S requires final cleaning and drying, the processing contents and processing liquid are not limited to the above examples. The substrate W to be processed and the processing liquid are also not limited to the above examples.

[0132] [Other embodiments]

[0133] While the embodiments and variations of the present invention have been described above, these embodiments and variations are provided as examples and are not intended to limit the scope of the invention. The novel embodiments described above can be implemented in various other forms and may be omitted, replaced, or modified without departing from the spirit of the invention. These embodiments and their variations are intended to be within the scope and spirit of the invention and are encompassed by the invention as set forth in the claims.

Claims

1. A substrate drying device, characterized in that: have: A heating unit for heating the substrate; a drying chamber accommodating the heating unit and for carrying in the substrate with a liquid film of the processing liquid formed on the processed surface; a supporting portion, receiving the substrate carried into the drying chamber at a standby position away from the heating portion; as well as The driving mechanism rotates the substrate supported on the supporting portion at a rotational speed capable of maintaining the formation state of the liquid film while moving toward a drying position close to the heating portion, and the centrifugal force brought about by the rotation of the substrate causes the liquid film that has generated an air layer between the liquid film and the substrate after being heated by the heating portion to be discharged.

2. The substrate drying device according to claim 1, wherein: The drying chamber is provided with an opening for carrying the substrate in and out. The standby position is below the upper edge of the opening, The drying position is above the upper edge of the opening.

3. The substrate drying device according to claim 1 or 2, characterized in that: have: a measuring unit for measuring a film thickness of the liquid film on a processed surface of the substrate carried into the drying chamber and supported on the supporting unit at the standby position; a supply unit for supplying the processing liquid to a processing surface of the substrate carried into the drying chamber and supported on the support unit at the standby position; as well as The control device controls the driving mechanism and the supply unit based on the measurement result obtained by the measurement unit, thereby adjusting the film thickness of the liquid film on the processing surface of the substrate in the standby position.

4. The substrate drying device according to claim 3, wherein: The drying position is located above the supply portion at a supply position that supplies the processing liquid to the substrate.

5. The substrate drying device according to claim 1 or 2, characterized in that: A plurality of drying positions are set at positions at different intervals from the heating portion according to the type of the processing liquid.

6. The substrate drying device according to claim 1 or 2, characterized in that: After the substrate is dried at the drying position, the drive mechanism moves the substrate supported by the support portion to the standby position while rotating the substrate.

7. A substrate processing device, characterized in that: have: a processing device that processes the substrate by supplying a processing liquid while rotating the substrate; a cleaning device for cleaning the processed substrate by rotating the substrate while supplying the processing liquid; The substrate drying device according to any one of claims 1 to 6; as well as The transport device carries out the substrate cleaned in the cleaning device in a state where the liquid film formed by the processing liquid is formed, and carries it into the substrate drying device.

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