Light-emitting diode epitaxial wafer with improved luminescence and preparation efficiency and preparation method thereof

Abstract

The present disclosure discloses a light-emitting diode epitaxial wafer and a preparation method thereof that improves luminescence and preparation efficiency, and belongs to the field of light-emitting diode production. When growing a barrier layer in a multi-quantum well layer of a light-emitting diode epitaxial wafer, a first organic metal source and a first reaction gas are introduced into a reaction chamber to grow a first sublayer, the first organic metal source includes trimethyl gallium, and the first reaction gas includes hydrogen, ammonia, and nitrogen. The growth rate of the obtained first sublayer is relatively fast, shortening the preparation time required for the barrier layer; and the hydrogen in the first reaction gas can inhibit the penetration of In atoms into the first sublayer, ensuring the forming speed of the first sublayer while improving the crystal quality of the obtained first sublayer. Triethyl gallium and a second reaction gas are introduced to grow a second sublayer on the first sublayer. Triethyl gallium can make the obtained second sublayer have better crystal quality and electrical properties, effectively improving the luminescence efficiency and preparation efficiency of the final light-emitting diode epitaxial wafer.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting diode (LED) production, and in particular to a light-emitting diode (LED) epitaxial wafer and a production method thereof for improving light-emitting and production efficiency. Background Art

[0002] Light-emitting diodes (LEDs) are semiconductor electronic components that emit light. As a highly efficient, environmentally friendly, and green new solid-state lighting source, they are rapidly gaining widespread application in applications such as traffic lights, automotive interior and exterior lighting, urban landscape lighting, and mobile phone backlights. Improving the chip's luminous efficiency is a constant goal for LEDs.

[0003] In the prior art, an epitaxial wafer for a light-emitting diode typically includes a substrate and sequentially grown n-type GaN layers, multi-quantum well layers, and p-type GaN layers on the substrate. In the prior art, the multi-quantum well layers include alternating stacks of InGaN well layers and barrier layers.

[0004] In the multi-quantum well layer, if the barrier layer and InGaN well layer are grown rapidly at high pressure and temperature to improve the luminous efficiency of the light-emitting diode epitaxial wafer, the barrier layer and the InGaN well layer obtained by rapid growth will contain a large number of defects. The decomposition of In atoms in the InGaN well layer into the barrier layer will also lead to an increase in defects in the barrier layer. Defects will capture electrons flowing through the multi-quantum well layer, reducing the number of electrons that can undergo recombination and emit light in the InGaN well layer, reducing the luminous efficiency of the multi-quantum well layer, making it difficult to simultaneously ensure the production efficiency and luminous efficiency of the light-emitting diode epitaxial wafer. Summary of the Invention

[0005] The embodiments of the present disclosure provide a light-emitting diode epitaxial wafer and a method for manufacturing the same that improves light-emitting and manufacturing efficiency, thereby improving the light-emitting efficiency and manufacturing efficiency of the light-emitting diode epitaxial wafer. The technical solution is as follows:

[0006] The present disclosure provides a light-emitting diode epitaxial wafer with improved light-emitting and manufacturing efficiency, wherein the manufacturing method includes:

[0007] providing a substrate;

[0008] growing an n-type GaN layer on the substrate;

[0009] Growing a multi-quantum well layer on the n-type GaN layer, wherein the multi-quantum well layer includes alternately stacked barrier layers and InGaN well layers, and the material of the barrier layers is a gallium nitride compound;

[0010] growing a p-type GaN layer on the multi-quantum well layer;

[0011] Growing the barrier layer, comprising:

[0012] A first organic metal source and a first reaction gas are introduced into the reaction chamber to grow a first sublayer, wherein the first organic metal source includes trimethylgallium, and the first reaction gas includes hydrogen, ammonia, and nitrogen;

[0013] A second organic metal source and a second reaction gas are introduced into the reaction chamber to grow a second sublayer on the first sublayer, wherein the second organic metal source includes triethylgallium. The material of the first sublayer is the same as that of the second sublayer.

[0014] Optionally, the volume of the hydrogen gas is 5% to 20% of the volume of the first reaction gas.

[0015] Optionally, the second reaction gas includes nitrogen and ammonia, and the volume of nitrogen in the second reaction gas accounts for 40-60% of the total volume of the second reaction gas.

[0016] Optionally, the thickness of the first sub-layer is greater than the thickness of the second sub-layer.

[0017] Optionally, the thickness of the first sublayer is 1-5 nm, and the thickness of the second sublayer is 0.5-1 nm.

[0018] Optionally, the first sub-layer is doped with Si element.

[0019] Optionally, the doping concentration of Si element in the first sub-layer is 1×10 17 ~1×10 18 cm -3 .

[0020] Optionally, the multi-quantum well layer includes alternately stacked barrier layers and InGaN well layers and an InN sacrificial layer between each barrier layer and the InGaN well layer.

[0021] Optionally, the sacrificial layer has a thickness of 0.1 to 2 nm.

[0022] The embodiment of the present disclosure provides a light-emitting diode epitaxial wafer with improved light-emitting and preparation efficiency. The light-emitting diode epitaxial wafer with improved light-emitting and preparation efficiency is realized by the preparation method of the light-emitting diode epitaxial wafer with improved light-emitting and preparation efficiency as described above.

[0023] The technical solutions provided by the embodiments of the present disclosure have the following beneficial effects:

[0024] When growing the barrier layer in the multi-quantum well layer of a light-emitting diode epitaxial wafer, a first organic metal source and a first reaction gas are introduced into the reaction chamber to grow the first sublayer. The first organic metal source includes trimethylgallium, and the first reaction gas includes hydrogen, ammonia, and nitrogen. Trimethylgallium and a first reaction gas including hydrogen, ammonia, and nitrogen are first introduced onto the InGaN well layer. The combination of trimethylgallium and the ammonia in the first reaction gas promotes the rapid growth of the first sublayer, which is a gallium-nitrogen compound. The resulting first sublayer grows at a faster rate and can ensure good morphology and optical properties. This reduces the growth time required to grow a first sublayer of a certain thickness, thereby shortening the preparation time required for the barrier layer to a certain extent. The hydrogen in the first reaction gas can inhibit the penetration of In atoms into the first sublayer, thereby ensuring the formation speed of the first sublayer while improving the crystal quality of the resulting first sublayer. After growing a first sub-layer of relatively good quality, triethylgallium and a second reaction gas are introduced to grow a second sub-layer on the first sub-layer. Triethylgallium can make the obtained second sub-layer have better crystal quality and electrical properties, thereby improving the crystal quality of the final barrier layer and shortening the preparation time, which can effectively improve the luminous efficiency and preparation efficiency of the final light-emitting diode epitaxial wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0026] Figure 1 This is a flow chart of a method for preparing a light-emitting diode epitaxial wafer with improved light-emitting and preparation efficiency, provided by an embodiment of the present disclosure;

[0027] Figure 2 This is a schematic structural diagram of a light-emitting diode epitaxial wafer for improving light emission and manufacturing efficiency provided by an embodiment of the present disclosure;

[0028] Figure 3 This is a flow chart of another method for preparing a light-emitting diode epitaxial wafer that improves light emission and preparation efficiency, provided by an embodiment of the present disclosure;

[0029] Figure 4 This is a schematic structural diagram of another light-emitting diode epitaxial wafer for improving light-emitting and manufacturing efficiency provided by an embodiment of the present disclosure. DETAILED DESCRIPTION

[0030] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0031] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by a person of ordinary skill in the art to which this disclosure pertains. The terms "first," "second," "third," and similar words used in the patent specification and claims of this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish between different components. Similarly, terms such as "a" or "an" do not indicate a quantitative limitation, but rather indicate the presence of at least one. Terms such as "include" or "comprise" mean that the elements or objects preceding "include" or "comprises" encompass the elements or objects listed after "include" or "comprises," and their equivalents, and do not exclude other elements or objects. Terms such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," "right," "top," and "bottom" are used only to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0032] Figure 1 This is a flow chart of a method for preparing a light-emitting diode epitaxial wafer with improved light emission and preparation efficiency provided by the embodiment of the present disclosure. Figure 1 It can be seen that the embodiment of the present disclosure provides a method for preparing a light-emitting diode epitaxial wafer that improves light emission and preparation efficiency. The preparation method includes:

[0033] S101: providing a substrate.

[0034] S102: growing an n-type GaN layer on the substrate.

[0035] S103: Growing a multi-quantum well layer on the n-type GaN layer, the multi-quantum well layer comprising alternating barrier layers and InGaN well layers, the barrier layers being made of a gallium-nitrogen compound. Growing the barrier layer comprises: introducing a first organic metal source and a first reaction gas into a reaction chamber to grow a first sublayer, the first organic metal source comprising trimethyl gallium, the first reaction gas comprising hydrogen, ammonia, and nitrogen; and introducing a second organic metal source and a second reaction gas into the reaction chamber to grow a second sublayer on the first sublayer, the second organic metal source comprising triethyl gallium, the material of the first sublayer being the same as the material of the second sublayer.

[0036] S104: growing a p-type GaN layer on the multi-quantum well layer.

[0037] When growing the barrier layer in the multi-quantum well layer of a light-emitting diode epitaxial wafer, a first organic metal source and a first reaction gas are introduced into the reaction chamber to grow the first sublayer. The first organic metal source includes trimethylgallium, and the first reaction gas includes hydrogen, ammonia, and nitrogen. Trimethylgallium and a first reaction gas including hydrogen, ammonia, and nitrogen are first introduced onto the InGaN well layer. The combination of trimethylgallium and the ammonia in the first reaction gas promotes the rapid growth of the first sublayer, which is a gallium-nitrogen compound. The resulting first sublayer grows at a faster rate and can ensure good morphology and optical properties. This reduces the growth time required to grow a first sublayer of a certain thickness, thereby shortening the preparation time required for the barrier layer to a certain extent. The hydrogen in the first reaction gas can inhibit the penetration of In atoms into the first sublayer, thereby ensuring the formation speed of the first sublayer while improving the crystal quality of the resulting first sublayer. After growing a first sub-layer of relatively good quality, triethylgallium and a second reaction gas are introduced to grow a second sub-layer on the first sub-layer. Triethylgallium can make the obtained second sub-layer have better crystal quality and electrical properties, thereby improving the crystal quality of the final barrier layer and shortening the preparation time, which can effectively improve the luminous efficiency and preparation efficiency of the final light-emitting diode epitaxial wafer.

[0038] It should be noted that the superior morphology and optical properties of the first sublayer obtained by introducing trimethylgallium are due to the different ligands and chemical formulas between trimethylgallium (Ga(CH3)3) and triethylgallium (Ga(C2H5)3). At the same temperature and pressure, their saturated vapor pressures differ. The smaller the chemical formula, the easier it is to evaporate TMGa, resulting in a faster growth rate for trimethylgallium. The growth rate of trimethylgallium is 30 to 35 times that of triethylgallium. Therefore, when TMGa is used to grow GaN, the GaN growth rate is greater, and the quantum well InGaN layer can be flattened more quickly in a short time. The morphology of the first sublayer is the surface state of the first sublayer. The relatively flat surface state of the first sublayer can improve the quality of the subsequently grown second sublayer and is conducive to the emission of light. The electrical properties and crystal quality of the second sublayer obtained by introducing triethylgallium are better because triethylgallium Ga(C2H5)3 has a group III organic source with a larger ligand. The ethyl group is weakly bound on the surface and can be desorbed before the reaction grows carbon. The complex group can decompose on the surface, produce C double bonds in the desorbed molecules, and leave H atoms on the surface without producing C-containing substances. Therefore, the GaN / AlGaN material grown using triethylgallium has low carbon impurities, and thus low defect density can provide high crystal quality materials. The second sublayer with better crystal quality can ensure stable electron transfer. The gallium nitrogen compound provided in the present disclosure is a compound containing gallium and nitrogen elements.

[0039] In one implementation provided by the present disclosure, the material of the barrier layer may be gallium nitride or aluminum gallium nitride. When the material of the barrier layer is aluminum gallium nitride, it can achieve the effect of spreading the current.

[0040] Optionally, in step S103, the barrier layer growth temperature and growth pressure may be 830-900 degrees Celsius and 200-500 Torr, respectively. This ensures good quality of the resulting barrier layer and prevents excessive precipitation of In atoms in the InGaN well layer, thereby improving the overall quality of the multi-quantum well layer.

[0041] For example, the flow rate of trimethylgallium used to grow the first sublayer is the same as the flow rate of triethylgallium used to grow the second sublayer, thereby ensuring good quality of the first and second sublayers without significantly increasing the production cost of the LED epitaxial wafer.

[0042] Optionally, the flow rate of trimethylgallium introduced during the growth of the first sublayer is 35-60 sccm, and the flow rate of triethylgallium introduced during the growth of the second sublayer is 1300-1800 sccm. This ensures good quality of the first and second sublayers without significantly increasing the production cost of the LED epitaxial wafer.

[0043] Optionally, in the first reaction gas, the volume of hydrogen is 5% to 20% of the volume of the first reaction gas.

[0044] When the ratio of the volume of hydrogen to the volume of the first reaction gas is within the above range, the penetration of In atoms can be effectively suppressed, the quality of the first sub-layer can be improved, and the preparation cost of the first sub-layer will not be too high.

[0045] Illustratively, the second reaction gas includes nitrogen and ammonia, and the volume of nitrogen in the second reaction gas accounts for 40-60% of the total volume of the second reaction gas.

[0046] The high proportion of nitrogen in the second reaction gas can promote the lateral layering and growth of the second sub-layer, and can also reduce the reverse reaction of ammonia and the organic metal source, thereby improving the growth efficiency of the second sub-layer and ensuring the growth quality.

[0047] Optionally, the thickness of the first sub-layer is greater than the thickness of the second sub-layer.

[0048] The thickness of the first sublayer is greater than that of the second sublayer, which can achieve rapid growth of the barrier layer and ensure that the InGaN well layer of the next period can be grown on the second sublayer with better crystal quality, thereby improving the overall quality of the multi-quantum well layer and ensuring high preparation efficiency of the multi-quantum well layer.

[0049] Optionally, the thickness of the first sublayer is 1-5 nm, and the thickness of the second sublayer is 0.5-1 nm.

[0050] The thicknesses of the first sub-layer and the second sub-layer are respectively within the above ranges, which can ensure that the quality of the obtained barrier layer is good and can also reasonably control the preparation cost of the barrier layer.

[0051] Exemplarily, the first sub-layer is doped with Si element.

[0052] The first sublayer is doped with Si, which can effectively shield the piezoelectric field caused by mismatch stress and alleviate the adverse effects of the QCSE effect. Therefore, Si-doping the GaN barrier layer can effectively improve the quality of InGaN / GaN multiple quantum wells.

[0053] Optionally, the doping concentration of Si element in the first sub-layer is 1×10 17 ~1×10 18 cm -3 While ensuring good quality of the first sub-layer, the appropriate amount of Si doping can enhance the localization effect, improve electron mobility and radiation recombination efficiency.

[0054] In one implementation provided by the present disclosure, an embodiment of the present disclosure provides a light-emitting diode epitaxial wafer with improved light-emitting and production efficiency, and the light-emitting diode epitaxial wafer with improved light-emitting and production efficiency is realized by using the aforementioned method for preparing the light-emitting diode epitaxial wafer with improved light-emitting and production efficiency. Figure 2 , Figure 2 This is a structural diagram of a light-emitting diode epitaxial wafer for improving light emission and preparation efficiency provided by an embodiment of the present disclosure. Figure 2 The light emitting diode epitaxial wafer can be made of Figure 1 The preparation method shown in the figure obtains a light-emitting diode epitaxial wafer with improved luminescence and preparation efficiency, comprising an n-type GaN layer 2, a multi-quantum well layer 3 and a p-type GaN layer 4 stacked in sequence, the multi-quantum well layer 3 comprising an InGaN well layer 31 and a barrier layer 32 stacked alternately, and the barrier layer 32 comprising a first sublayer 321 and a second sublayer 322 stacked in sequence.

[0055] When growing the barrier layer 32 in the multi-quantum well layer 3 of the light-emitting diode epitaxial wafer, a first organic metal source and a first reaction gas are introduced into the reaction chamber to grow the first sublayer 321. The first organic metal source includes trimethylgallium, and the first reaction gas includes hydrogen, ammonia, and nitrogen. Trimethylgallium and a first reaction gas including hydrogen, ammonia, and nitrogen are first introduced onto the InGaN well layer 31. The combination of trimethylgallium and the ammonia in the first reaction gas promotes the rapid growth of the first sublayer 321, which is a gallium-nitrogen compound. The resulting first sublayer 321 grows at a faster rate, ensuring good morphology and optical properties for the first sublayer 321. This reduces the growth time required to grow a first sublayer 321 of a certain thickness, thereby shortening the preparation time required for the barrier layer 32 to a certain extent. The hydrogen in the first reaction gas inhibits the penetration of indium atoms into the first sublayer 321, thereby ensuring the formation speed of the first sublayer 321 while improving the crystal quality of the resulting first sublayer 321. After growing the first sub-layer 321 with good quality, triethylgallium and the second reaction gas are introduced to grow the second sub-layer 322 on the first sub-layer 321. Triethylgallium can make the obtained second sub-layer 322 have better crystal quality and electrical properties, so that the crystal quality of the final barrier layer 32 is improved and the preparation time is shortened, which can effectively improve the luminous efficiency and preparation efficiency of the final light-emitting diode epitaxial wafer.

[0056] For example, the thickness of the barrier layer 32 may be 80 to 200 angstroms, which can ensure that the quality of the barrier layer 32 is good and that the barrier layer 32 can stably pass light.

[0057] Optionally, the thickness of the InGaN well layer 31 is 2-3 nm, which can ensure stable light emission of the multi-quantum well layer.

[0058] Illustratively, the thickness of the first sublayer 321 is 1-5 nm, and the thickness of the second sublayer 322 is 0.5-1 nm.

[0059] The thicknesses of the first sub-layer 321 and the second sub-layer 322 are respectively within the above ranges, which can ensure that the quality of the obtained barrier layer 32 is good, and can also reasonably control the preparation cost of the barrier layer 32 .

[0060] Figure 3 This is a flow chart of another method for preparing a light-emitting diode epitaxial wafer to improve luminescence and preparation efficiency provided by the embodiment of the present disclosure. Figure 3 It can be seen that the method for preparing a light emitting diode epitaxial wafer may further include:

[0061] S201: providing a substrate.

[0062] The substrate can be a sapphire substrate, which is easy to implement and manufacture.

[0063] Optionally, step S201 may further include: treating the surface of the substrate for growing the epitaxial layer in a hydrogen atmosphere for 5 to 6 minutes.

[0064] For example, when processing the surface of the substrate for growing the epitaxial layer, the temperature of the reaction chamber may be 1000-1100° C., and the pressure of the reaction chamber may be 200-500 Torr.

[0065] S202: growing a buffer layer on the substrate.

[0066] The buffer layer may be an AlN buffer layer. The AlN layer may be obtained by magnetron sputtering.

[0067] For example, the deposition temperature of the AlN layer may be 400-800° C., the sputtering power may be 3000-5000 W, and the pressure may be 2-20 mtorr. The quality of the obtained AlN layer is good.

[0068] S203: growing a non-doped GaN layer on the buffer layer.

[0069] The thickness of the undoped GaN layer may be 0.5 to 3 μm.

[0070] For example, the growth temperature of the undoped GaN layer may be 1000-1100° C., and the growth pressure may be controlled at 100-300 Torr. The quality of the undoped GaN layer obtained is good.

[0071] S204: growing an n-type GaN layer on the undoped GaN layer.

[0072] Optionally, the growth temperature of the n-type GaN layer may be 1000-1100° C., and the growth pressure of the n-type GaN layer may be 100-300 Torr.

[0073] Optionally, the thickness of the n-type GaN layer may be 0.5-3 um.

[0074] S205: growing a multi-quantum well layer on the n-type GaN layer, the multi-quantum well layer including alternately stacked barrier layers and InGaN well layers and an InN sacrificial layer between each barrier layer and the InGaN well layer.

[0075] An InN sacrificial layer is added between the InGaN well layer and the barrier layer. The InN sacrificial layer can prevent the InGaN well layer from directly contacting the barrier layer grown at a higher temperature, reduce the possibility of In atoms precipitating from the InGaN well layer, thereby improving the quality of the InGaN well layer and ensuring that there is sufficient space for carriers in the multi-quantum well layer to recombine and emit light, thereby improving the light extraction efficiency of the multi-quantum well layer.

[0076] Optionally, the thickness of the InN sacrificial layer is 0.1 to 2 nm. When the thickness of the sacrificial layer is within the above range, it can effectively protect the InGaN well layer to ensure the quality of the obtained InGaN well layer without excessively increasing the preparation cost of the multi-quantum well layer.

[0077] For example, the InN sacrificial layer is grown at a temperature of 700-800 degrees Celsius and a pressure of 200-500 Torr. This ensures good quality for the InN sacrificial layer itself and the barrier layer grown on it. Furthermore, the InN sacrificial layer effectively protects the InGaN well layer.

[0078] It should be noted that the growth conditions and parameters of the InGaN well layer in step S205 can be referred to Figure 1 The growth conditions and parameters of the InGaN well layer in step S102 and the growth conditions and parameters of the barrier layer in step S205 can be referred to Figure 1 The growth conditions and parameters of the barrier layer in step S102 are not described in detail here.

[0079] S206: growing an AlGaN electron blocking layer on the multi-quantum well layer.

[0080] The AlGaN electron blocking layer can be grown at a temperature of 800-1000°C and a pressure of 100-300 Torr. The AlGaN electron blocking layer grown under these conditions has good quality, which is beneficial for improving the luminous efficiency of the light-emitting diode.

[0081] S207: growing a p-type GaN layer on the AlGaN electron blocking layer.

[0082] Optionally, the growth pressure of the p-type GaN layer may be 200-600 Torr, and the growth temperature of the p-type GaN layer may be 800-1000° C.

[0083] S208: growing a p-type contact layer on the p-type GaN layer.

[0084] Optionally, the growth pressure of the p-type contact layer may be 200-600 Torr, and the growth temperature of the p-type contact layer may be 800-1000° C.

[0085] It should be noted that Figure 3 The method for preparing the light emitting diode epitaxial wafer shown in Figure 1 The light-emitting diode preparation method shown in provides a more detailed growth method of light-emitting diode epitaxial wafers.

[0086] The structure of the light emitting diode epitaxial wafer after executing step S208 can be seen in Figure 4.

[0087] It should be noted that in the embodiments of the present disclosure, a Veeco K465ior C4or RBMOCVD (Metal Organic Chemical Vapor Deposition) device is used to realize the growth method of the light-emitting diode. High-purity H2 (hydrogen) or high-purity N2 (nitrogen) or a mixture of high-purity H2 and high-purity N2 is used as the carrier gas, high-purity NH3 is used as the N source, trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium source, trimethylindium (TMIn) is used as the indium source, silane (SiH4) is used as the N-type dopant, trimethylaluminum (TMAl) is used as the aluminum source, and bis(cyclopentadienyl)magnesium (CP2Mg) is used as the P-type dopant.

[0088] Figure 4 This is a schematic diagram of the structure of another light-emitting diode epitaxial wafer for improving light emission and preparation efficiency provided by the embodiment of the present disclosure, with reference to Figure 4 It can be seen that the embodiment of the present disclosure provides a light-emitting diode epitaxial wafer with improved light-emitting and preparation efficiency. The light-emitting diode epitaxial wafer with improved light-emitting and preparation efficiency includes a buffer layer 6, an undoped GaN layer 7, an n-type GaN layer 2, a multi-quantum well layer 3, an AlGaN electron blocking layer 8, a p-type GaN layer 4 and a p-type contact layer 5 stacked in sequence. The multi-quantum well layer 3 includes alternately stacked InGaN well layers 31 and barrier layers 32, and an InN sacrificial layer 33 is inserted between each InGaN well layer 31 and the barrier layer 32. The barrier layer 32 includes a first sublayer 321 and a second sublayer 322 stacked in sequence.

[0089] It should be noted that Figure 4 The structures of the InGaN well layer 31 and the barrier layer 32 are respectively Figure 2 The structures of the InGaN well layer 31 and the barrier layer 32 shown in FIG are the same and will not be described again here.

[0090] Optionally, the substrate 1 may be a sapphire substrate 1. It is easy to manufacture and obtain.

[0091] For example, the buffer layer 6 may be an AlN buffer layer 6 , which can ensure the crystal quality of the epitaxial thin film grown on the low-temperature buffer layer 6 .

[0092] Optionally, the buffer layer 6 may have a thickness of 10 to 30 nm, which can reduce the lattice mismatch between the n-type GaN layer 2 and the substrate 1 and ensure the growth quality of the epitaxial layer.

[0093] For example, the thickness of the non-doped GaN layer 7 may be 1 to 3.5 μm. In this case, the quality of the light-emitting diode epitaxial wafer obtained is relatively good.

[0094] In an implementation provided by the present disclosure, the thickness of the undoped GaN layer 7 may also be 1 μm, which is not limited by the present disclosure.

[0095] Optionally, the doping element of the n-type GaN layer 2 may be Si, and the doping concentration of the Si element may be 1×10 18 ~1×10 19 cm -3 The overall quality of the n-type GaN layer 2 is good.

[0096] For example, the thickness of the n-type GaN layer 2 may be 2 to 3 μm. The obtained n-type GaN layer 2 has good overall quality.

[0097] In an implementation provided by the present disclosure, the thickness of the n-type GaN layer 2 may be 2 μm, which is not limited by the present disclosure.

[0098] Optionally, the multi-quantum well layer 3 includes alternately stacked InGaN well layers and GaN barrier layers, which can ensure stable light emission of the light-emitting diode.

[0099] Optionally, the Al composition in the AlGaN electron blocking layer 8 may be 0.15-0.25, which has a better electron blocking effect.

[0100] The above description is merely an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A method for preparing a light-emitting diode epitaxial wafer with improved luminescence and preparation efficiency, characterized in that: The preparation method comprises: providing a substrate; growing an n-type GaN layer on the substrate; Growing a multi-quantum well layer on the n-type GaN layer, wherein the multi-quantum well layer includes alternately stacked barrier layers and InGaN well layers, and the material of the barrier layers is a gallium nitride compound; growing a p-type GaN layer on the multi-quantum well layer; Growing the barrier layer, comprising: A first organic metal source and a first reaction gas are introduced into the reaction chamber to grow a first sublayer, wherein the first organic metal source includes trimethylgallium, and the first reaction gas includes hydrogen, ammonia, and nitrogen; A second organic metal source and a second reaction gas are introduced into the reaction chamber to grow a second sublayer on the first sublayer, wherein the second organic metal source includes triethylgallium, and the second reaction gas includes nitrogen and ammonia. The material of the first sublayer is the same as that of the second sublayer.

2. The preparation method according to claim 1, characterized in that The volume of the hydrogen gas is 5% to 20% of the volume of the first reaction gas.

3. The preparation method according to claim 2, characterized in that The volume of nitrogen in the second reaction gas accounts for 40-60% of the total volume of the second reaction gas.

4. The preparation method according to any one of claims 1 to 3, characterized in that The thickness of the first sub-layer is greater than the thickness of the second sub-layer.

5. The preparation method according to any one of claims 1 to 3, characterized in that The thickness of the first sublayer is 1-5 nm, and the thickness of the second sublayer is 0.5-1 nm.

6. The preparation method according to any one of claims 1 to 3, characterized in that The first sub-layer is doped with Si element.

7. The preparation method according to claim 6, characterized in that The doping concentration of Si element in the first sublayer is 1×10 17 ~1×10 18 cm -3 .

8. The preparation method according to any one of claims 1 to 3, characterized in that The multi-quantum well layer includes barrier layers and InGaN well layers that are alternately stacked, and an InN sacrificial layer between each barrier layer and the InGaN well layer.

9. The preparation method according to claim 8, characterized in that The thickness of the sacrificial layer is 0.1-2 nm.

10. A light-emitting diode epitaxial wafer with improved light-emitting and production efficiency, characterized in that: The light-emitting diode epitaxial wafer with improved luminescence and preparation efficiency is manufactured by the method for manufacturing the light-emitting diode epitaxial wafer with improved luminescence and preparation efficiency as claimed in any one of claims 1 to 9.

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