Substrate processing apparatus equipped with a lifter unit

Abstract

The present invention may include: a disk part configured inside a chamber for processing a substrate; a plurality of pocket parts provided in the disk part for placing respective substrates and arranged at equal angles with respect to the center of the disk part; and a lifter part for lifting and lowering the substrate. The lifter part may be respectively provided in each of the pocket parts and move up and down at the center of the pocket part.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus for depositing a thin film on a substrate or for washing or etching a substrate. Background Art

[0002] By using a plate configured with a plurality of substrates, processes such as thin film deposition and etching of the substrates can be simultaneously performed on the plurality of substrates in a chamber.

[0003] However, due to the diffusion range or temperature distribution of the raw materials present inside the chamber and the non-uniform temperature of the substrates, it is easy to cause the problem that the processing states of the respective substrates arranged on the plate are non-uniform.

[0004] Due to the non-uniformity of the thin film thickness as described above, there may be problems such as large deviations in the electrical characteristics of the components manufactured on a single substrate and a decrease in the yield. Summary of the Invention

[0005] Technical Problem

[0006] As a substrate processing apparatus capable of uniformly processing a plurality of substrates simultaneously, the present invention can be equipped with a lifter unit for supporting and lifting the substrates.

[0007] Since the substrate directly contacts the lifter unit during the substrate processing process, the temperature gradient of the substrate may change according to the shape of the lifter unit, and the uniformity of the thin film deposited on the substrate may also be affected. Summary of the Invention

[0009] The present invention may include: a disk unit configured inside a chamber for processing a substrate; a plurality of bag units provided in the disk unit for placing each substrate, arranged at equal angles with respect to the center of the disk unit; and a lifter unit for lifting the substrate.

[0010] The center of the central portion coincides with the center of the bag unit, one end of the support piece can be connected to the central portion, and the support pieces can be arranged at equal angles with respect to the center of the central portion and extend radially.

[0011] The bag unit may include a placement surface and a placement ridge. The substrate can be placed on the placement surface, and the shape can be the same as that of the substrate. The placement ridges can be formed facing each other along the periphery of the placement surface, and the placement ridges can protrude in a direction perpendicular to the placement surface.

[0012] The lifter unit includes a shaft portion connected to the support portion and extending in a direction perpendicular to the support portion.

[0013] On one side of the shaft portion, a D-shaped cutting portion can be provided for fixing the lifter unit to the bag unit by restricting the movement of the support portion when the bag unit rotates.

[0014] The D-shaped cutting part is formed by cutting a part of the shaft part along the axial direction and can be extended along the length direction of the shaft part.

[0015] A lifter driving part that is spaced apart from the disk part by a certain interval when the disk part rotates can be provided. The lifter driving part can lift the shaft part from the bag part by entering the through hole of the bag part and pushing the end of the shaft part in a state where the disk part stops.

[0016] Advantages of the Invention

[0017] The temperature gradient of the substrate in contact with the lifter part may affect the uniformity of the thin film that needs to be deposited. By reducing the temperature gradient as described above, the uniformity of the thin film can be improved.

[0018] When depositing a thin film by the spatial division plasma enhanced atomic layer deposition (PEALD) method, in the structure of the chamber, the lifter part may be located exactly in the center of the bag part into which the substrate is inserted. At this time, the temperature at the center of the substrate may be lower than the temperature of the peripheral part. In order to improve the above problems, the support part of the lifter part in contact with the substrate can adopt a shape with the smallest area.

[0019] The placed substrate can be in contact with the support part and the placement surface of the bag part. A heating component can be provided between the disk part and the chamber surface, and the hot air from the heating component can be transmitted to the substrate through the disk part and the bag part.

[0020] During the engineering process, the substrate may come into contact with other types of substances and thus form a temperature gradient. Therefore, the substrate can reduce the temperature gradient of the substrate by minimizing the contact area of one of the two types of substances in contact.

[0021] That is, the area of the support part of the lifter part can be minimized, and only the minimum structure required for stably supporting the substrate is retained. The shape of the support part equipped with three support pieces extending radially from the center can be an embodiment for realizing the above structure.

[0022] When processing the substrate by the spatial division plasma enhanced atomic layer deposition (PEALD) method, the substrate can perform a first rotation centered on the center of the bag part and a second rotation centered on the center of the disk part. Through the first rotation and the second rotation, the substrate can achieve a uniform temperature gradient.

[0023] In summary, the substrate can improve the temperature gradient through at least one of the first rotation, the second rotation, and the minimum area shape of the support part, and thereby uniformly perform the film processing engineering. Description of the Drawings

[0024] Figure 1 It is a side sectional view of a substrate processing apparatus to which the present invention is applied.

[0025] Figure 2 It is a plan view of a disk portion in a state where a substrate to which the present invention is applied is placed in a bag portion.

[0026] Figure 3 It is a schematic view illustrating an embodiment of a lifter portion to which the present invention is applied.

[0027] Figure 4 It is Figure 3 a lower perspective view of the lifter portion in

[0028] Figure 5 It is Figure 4 a bottom view of the lifter portion in

[0029] Symbol Explanation

[0030] 10: First rotation shaft, 12: Main gear, 14: Bag gear, 20: Second rotation shaft, 30: Heating member, 50: Substrate, 60: Chamber, 100: Disk portion, 200: Bag portion, 210: Placement surface, 220: Placement ridge, 230: Through hole, 300: Lifter portion, 310: Support portion, 311: Upper side surface of the support portion, 312: Lower side surface of the support portion, 314: Central portion, 316: Support piece, 320: Shaft portion, 320a: D-shaped cutting portion, 330: Lifter groove, 332: Suction hole, 334: Air passage, 340: Lifter drive portion, A: First rotation, B: Second rotation. Detailed Description of the Invention

[0031] A substrate processing apparatus to which the present invention is applied and which processes a substrate 50 by a space division method may include at least one of a disk portion 100, a bag portion 200, a second rotation portion, and a second rotation portion.

[0032] One substrate 50 may be placed in the bag portion 200, and a plurality of bag portions 200 may be provided in the disk portion 100. Accordingly, a number of substrates 50 corresponding to the number of bag portions 200 may be placed in the disk portion 100.

[0033] When performing processes such as deposition, washing, and etching of the substrate 50, the bag portion 200 in which the substrate 50 is placed may rotate, and the rotation of the bag portion 200 may include a first rotation A and a second rotation B.

[0034] The first rotation portion may include a first rotation shaft 10, and the rotation of the first rotation shaft 10 may cause the bag portion 200 to perform the first rotation. The second rotation portion may include a second rotation shaft 20, and the rotation of the second rotation shaft 20 may cause the bag portion 200 to perform the second rotation.

[0035] The first rotation A of the bag part 200 is the rotation of the bag part 200 on a plane with the center of the bag part 200 as the rotation center, which can be called the self-rotation of the bag part 200 in the following content. The first rotation A can rotate the bag part 200 by more than 360 degrees.

[0036] Compared with the self-rotation of the bag part 200, the second rotation B of the bag part 200 is the rotation of the bag part 200 with a hypothetical rotation axis provided outside the bag part 200 as the rotation center. The hypothetical rotation axis can be provided at the center of the chamber 60 or the center of the disk part 100.

[0037] The second rotation part of the bag part 200 can rotate the disk part 100 on which a plurality of bag parts 200 are installed with the center of the disk part 100 as the rotation center in order to make the bag part 200 revolve. The second rotation B of the bag part 200 can be called the revolution that rotates around the hypothetical rotation axis. The second rotation part can make the bag part 200 perform the second rotation B.

[0038] The first rotation A and the second rotation B of the bag part 200 can be rotated at different speeds and rotation directions by the control part. The user can adjust the directions and speeds of the first rotation axis 10 and the second rotation axis 20 through the control part, and determine the directions and speeds of the first rotation axis 10 and the second rotation axis 20 by monitoring the processing results of each substrate 50.

[0039] The substrate 50 processing device may include: a chamber 60; a disk part 100 that supports at least one substrate 50 by being installed in the chamber 60; a gas injection part (not shown) for injecting source gas, reaction gas, and purification gas into different gas injection areas on the disk 100.

[0040] The chamber 60 can provide a reaction space for performing substrate 50 processing operations such as atomic layer deposition (ALD) operations. The disk part 100 can be rotatably installed on the inner bottom surface of the chamber 60.

[0041] In order to improve the productivity of the substrate 50 processing operation of the present invention that performs atomic layer deposition (ALD) operations by means of space division, when the disk part 100 is circular, a plurality of substrates 50 with centers located on the circumference of the disk part 100 can be arranged at regular intervals along the circumference of the disk part 100.

[0042] The disk part 100 can rotate in a specific direction (for example, the clockwise direction) as the rotation axis rotates, thereby rotating the substrate 50, so that the substrate 50 can be moved in a specific order, and the substrate 50 can be sequentially exposed to source gas, purification gas, and reaction gas.

[0043] The deposited film of atomic layer deposition (ALD) can be a specific film formed by a chemical displacement reaction between a source gas and a reaction gas.

[0044] It is only necessary to sequentially stack atomic films of a source gas and a reaction gas layer by layer, and a purge gas can be ejected after ejecting the source gas and the reaction gas.

[0045] The purge gas can be divided into a first purge gas ejected after the source gas and a second purge gas ejected after the reaction gas.

[0046] The substrate 50 can be sequentially exposed to the source gas, the purge gas, and the reaction gas as the disk part 100 rotates, whereby a single-layer or multi-layer thin film can be deposited on the substrate 50 through an atomic layer deposition (ALD, Atomic Layer Deposition) process.

[0047] The source gas can be ejected onto the substrate 50 facing the source gas region, the purge gas can be ejected onto the substrate 50 facing the purge gas region, and the reaction gas can be ejected onto the substrate 50 facing the reaction gas region.

[0048] The spatial division method can perform different gas processes on multiple substrates 50 simultaneously.

[0049] Inside the chamber 60, the substrate 50 can be processed through at least one of a thin film deposition process of the substrate 50, a washing process of the substrate 50, and an etching process of the substrate 50.

[0050] To improve the yield, it is advisable to deposit a thin film with a uniform thickness over the entire area of the substrate 50 such as a wafer and a printed circuit board (PCB) arranged inside the chamber 60. In addition, when multiple substrates 50 are arranged inside the chamber 60, the thin film thickness of a specific substrate 50 should be formed as uniformly as that of other substrates 50.

[0051] To achieve uniform processing of the substrate 50 including thin film deposition, it may be necessary to ensure a uniform distribution range of the raw materials diffused into the chamber 60. However, it may actually be difficult to ensure the uniformity of the raw material distribution inside the chamber 60. Generally speaking, because the raw material distribution inside the substrate 60 is not uniform, it may be difficult to uniformly perform film processes such as deposition and etching on the substrate 50.

[0052] The raw materials are easily concentrated and distributed in the center of the chamber 60 on a plane. Therefore, based on a single substrate 50, the processing of the region adjacent to the center of the chamber 60 may be stronger than that of the region adjacent to the edge of the chamber 60.

[0053] Therefore, when depositing a thin film, it may cause an uneven problem that one side of the substrate 50 is deposited with a thicker thickness than the other side. The uneven process problems as described above may also occur in the washing process and etching process of the substrate 50.

[0054] When the first substrate 50 and the second substrate 50 are simultaneously arranged inside the chamber 60, it may cause a problem that the film thickness of the first substrate 50 is different from that of the second substrate 50 due to uneven raw material distribution.

[0055] The object of the present invention is to equalize the processing states of different regions of a single substrate 50 regardless of the uneven distribution of the transported materials. At the same time, the object is to equalize the processing states of a plurality of substrates 50 processed simultaneously.

[0056] In the substrate 50 processing apparatus to which the present invention is applied, a bag portion 200 for simultaneously processing a plurality of substrates 50 can be provided. A plurality of bag portions 200 can be installed in the disk portion 100, and the substrate 50 can be placed in the bag portion 200.

[0057] The disk portion 100 or the bag portion 200 can rotate during the process, and in order to stably place the substrate 50 in the bag portion 200, a placement surface 210 or a placement ridge 220 can be provided in the bag portion 200.

[0058] As an embodiment, when the substrate 50 is circular in shape, the placement surface 210 can also adopt a circular shape of the same size as the substrate 50. The placement ridges 220 can be formed opposite to each other around the placement surface 210 and can have a specific height. The height of the placement ridges 220 can be equal to or greater than the thickness of the substrate 50.

[0059] Thereby, the substrate 50 can perform the process in a state of being stably placed in a plurality of bag portions 200 provided in the disk portion 100 by means of the placement surface 210 or the placement ridges 220.

[0060] When the first rotation and the second rotation of the bag portion 200 stop, the substrate 50 can be placed in the bag portion 200 or the substrate 50 can be taken out from the bag portion 200. At this time, the elevator portion 300 can be lifted and lowered.

[0061] When the substrate 50 is placed in the bag portion 200 by lowering the elevator portion 300, the substrate 50 can face the placement surface 210 in parallel. At this time, the substrate 50 can be in a state of contacting the support portion 310 and the placement surface 210.

[0062] When placing the substrate 50, in order to make the substrate 50 face the placement surface 210 in parallel, it is necessary to lower the support portion 310 to a position lower than the horizontal height of the placement surface 210. For this purpose, a lifter groove 330, which is a space for accommodating the lowered support portion 310, can be provided.

[0063] When the lifter portion 300 moves up and down, the shaft portion 320 can be guided along the through hole 230 of the bag portion 200 so as to move in the vertical direction. The state where the lifter portion 300 is lowered to the maximum extent can be the state where the substrate 50 is placed in the bag portion 200.

[0064] When the lifter portion 300 is lowered to the maximum extent, the support portion 310 can be placed in the lifter groove 330, and the substrate 50 can be placed on the placement surface 210. Unless the substrate 50 is completely removed from the bag portion 200 for performing other processes, the substrate 50 can maintain the state of being in contact with the support portion 310 when the lifter portion 300 moves up and down.

[0065] Therefore, the substrate 50 can be stably placed in the bag portion 200 through the placement surface 210 and the lifter groove 330, so that the film process can be stably performed on the substrate 50 when the bag portion 200 performs the first rotation and the second rotation.

[0066] Suction holes 332 can be formed in the lifter groove 330. An air passage 334 for applying vacuum to the suction holes 332 can be formed in the bag portion 200 or the disk portion 300. The suction holes 332 can attract the support portion 310 toward the lifter groove 330 side.

[0067] The support portion 310 can include an upper side surface 311 of the support portion facing the substrate 50 and a lower side surface 312 of the support portion placed in the lifter groove 330.

[0068] The upper side surface 311 of the support portion can be more convex than the lower side surface 312 of the support portion.

[0069] The upper side surface 311 of the support portion, which is more convex than the lower side surface 312 of the support portion, can cover the gap between the lifter groove 330 and the support portion 310.

[0070] Thereby, the substrate 50 can be more strongly sucked into the lifter groove 330 by the suction holes 332 of the lifter groove 330, and furthermore, the deposition film components can be maximally prevented from penetrating into the gap space between the support portion 310 and the lifter groove 330 by the upper side surface 311 of the support portion.

[0071] The centers of the plurality of pocket portions 200 formed on the disk portion 100 may be different from the center of the chamber 60 in a plane. Therefore, one side of the pocket portion 200 and the substrate 50 disposed on the pocket portion 200 may be disposed at a position adjacent to the center of the chamber 60, while the other side may be disposed at a position adjacent to the edge of the chamber 60.

[0072] When the disk portion 100 is installed at the center of the chamber 60, the deposition component density of one side of the substrate 50 close to the center of the disk portion 100 may be relatively higher than that of the other side of the substrate 50 close to the edge of the disk portion 100. Therefore, the problem of uneven film engineering may also occur within a single substrate 50.

[0073] In order to prevent uneven processing of the substrate 50, a first rotating portion may be used.

[0074] By the first rotation of the pocket portion 200, the area of one side of the substrate 50 disposed in the pocket portion 200 facing the center of the chamber 0 is not fixed but changes all the time. Therefore, all areas of the substrate 50 can be processed evenly.

[0075] As an example, by means of the first rotating portion, a thin film with a uniform thickness can be deposited and formed on one side and the other side of the substrate 50. Thereby, the thin film can be deposited with a certain thickness without difference in all areas of the substrate 50. When etching is performed, etching can be carried out to a uniform depth in all areas of the substrate 50.

[0076] Through the lifter portion 300 whose shape of the lateral interface is a "T" shape, the substrate 50 can maintain a state parallel to the placement surface 210. That is, it can be placed in the pocket portion 200 or at a certain interval from the pocket portion 200 without tilting.

[0077] When the first substrate 50 is disposed at the first position and the second substrate 50 is disposed at the second position inside the chamber 60, the raw material concentration at the first position may be different from the raw material concentration at the second position. Therefore, the thickness of the thin film deposited on the first substrate 50 may also be different from the thickness of the thin film deposited on the second substrate 50. In order to achieve the uniformization of the thickness of the thin film deposited on the first substrate 50 and the thickness of the thin film deposited on the second substrate 50, the substrate 50 processing device applying the present invention may further include a second rotating portion.

[0078] The second rotation of the pocket portion 200 may be the rotation of the pocket portion 200 with respect to the second rotation axis 20 provided outside the pocket portion 200. At this time, it is preferable that the second rotation axis 20 is provided at the center of the chamber 60 or the center of the disk portion 100.

[0079] The second rotating part can change the central position of the bag part 200 while moving the disk part 100 on which the bag part 200 is mounted. As an example, by alternately passing the first substrate 50 and the second substrate 50 through the first position and the second position by means of the second rotating part, the film thickness of the first substrate 50 and the second substrate 50 can be made uniform.

[0080] In the present invention, the processing uniformity of a single substrate 50 can be improved by the first rotating part, and the processing uniformity between multiple substrates 50 can be improved by the second rotating part, thereby greatly improving the overall yield.

[0081] In order to achieve the uniformity of the thin film process through monitoring and the like, the first rotating part and the second rotating part can be driven independently. Therefore, a control part for separately controlling the first rotating part and the second rotating part can be provided.

[0082] After the user confirms the film processing result of the substrate 50, the control part can subsequently separately control the first speed V1 of the first rotating part and the second speed V2 of the second rotating part.

[0083] In a state where the first rotating part for causing the bag part 200 to perform the first rotation is fixed to the chamber 60, the movement of the disk part 100 can be restricted by the first rotating part.

[0084] In order to enable the disk part 100 to move smoothly by means of the second rotating part, the first rotating part can rotate the bag part 200 while moving together with the disk part 100.

[0085] In the first rotating part, a first motor M1 for driving the first rotating shaft 10 to rotate, and gears, chains, magnetic chains, etc. that are linked to the first rotating shaft 10 and the bag part 200 so that the bag part 200 can perform the first rotation by means of the rotation of the first rotating shaft 10 can be provided.

[0086] As an example, in the first rotating part, a bag gear 14 connected to the bag part 200, a main gear 12 linked to the bag gear 14, a first rotating shaft 10 connected to the main gear 12, and a first motor M1 for driving the first rotating shaft 10 to rotate can be provided. At this time, in order to improve the processing uniformity of a single substrate 50, the first rotating shaft 10 is preferably formed at the center of the bag part 200.

[0087] When the first motor rotates, the first rotating shaft 10 in the motor shaft connected to the first motor will rotate. When the first rotating shaft 10 rotates, the main gear 12 will also rotate, and the bag gear 14 linked to the main gear 12 will rotate together therewith. When the bag gear 14 rotates, the bag part 200 can perform the first rotation.

[0088] When the motor shaft of the first motor rotates, regardless of whether the disk portion 100 rotates or not, the first rotating shaft 10 connected to the motor shaft of the first motor will also rotate accordingly, causing the bag portion 200 to rotate relative to the disk portion 100.

[0089] In the second rotating portion, a second rotating shaft 20 connected to the disk portion 200 and a second motor M2 for driving the second rotating shaft 20 to rotate can be provided.

[0090] The first motor M1 and the second motor M2 can be installed outside the chamber 60. Therefore, the first rotating shaft 10 connected to the first motor M1 and the second rotating shaft 20 connected to the second motor M2 can penetrate the chamber 60.

[0091] Since it is more disadvantageous that more elements penetrate the chamber 60 formed in a structure sealed with respect to the outside, it is advisable to arrange the first rotating shaft 10 and the second rotating shaft 20 coaxially.

[0092] As an example, the first rotating shaft 10 can be formed in the shape of a hollow pipe. At this time, the second rotating shaft 20 can be rotatably inserted into the hollow interior of the first rotating shaft 10.

[0093] Thereby, only the first rotating shaft 10 will penetrate the chamber 60 in terms of appearance. In addition, it can also be realized by an embodiment in which the second rotating shaft 20 is formed in the shape of a hollow pipe and the first rotating shaft 10 is inserted into the hollow interior of the second rotating shaft 20.

[0094] With the first motor M1 and the second motor M2 controlled separately by the control unit, the bag portion 200 and the disk portion 100 can rotate at different rotational speeds and can rotate in the same direction or in different directions from each other.

[0095] A lifter unit 300 for lifting and lowering the substrate 50 can be provided. The substrate 50 can be at a certain distance from the placement surface 210 of the bag portion 200 when the lifter unit rises, and can be placed on the placement surface 210 when the lifter unit 300 descends.

[0096] A thin film can be deposited on the substrate 50 placed on the placement surface 210. At this time, a part of the thin film may also be deposited on the bag portion 200. Thereby, the substrate 50 and the bag portion 200 may be in a partially adhered state due to the thin film, and the corresponding adhesion may be detached due to the lifter.

[0097] At this time, the substrate 50 is easily damaged under the pressure of the lifter applied to detach the adhesion. In addition, during the process of detaching the adhesion and the lifting process, the substrate 50 may also be detached from the lifter due to tilting.

[0098] To prevent damage to the substrate 50, the lifter unit 300 can adopt a special structure.

[0099] In order to disperse the pressure applied to the substrate 50 during the process of detaching the adhesion or the like, a support portion 310 extending in a direction parallel to the placement surface 210 of the bag portion 210 can be provided in the lifter unit 300. The support portion 310 can be in surface contact with the substrate 50 in a parallel manner, can evenly disperse the pressure applied to the substrate 50, and can also reliably prevent the substrate 50 from tilting during the lifting process.

[0100] For protecting the substrate 50, it is advisable that the support portion 310 be parallel to the placement surface 210 of the bag portion 200. In order to make the support portion 310 parallel to the placement surface 210, a shaft portion 320 extending downward from the center of the support portion 310 can be provided in the lifter unit 300.

[0101] The extending direction of the shaft portion 320 can be the same as the lifting direction of the support portion 310. The shaft portion 320 can be installed through a through hole 230 formed in the disk portion 100. At this time, the through hole 230 can extend from the upper side surface to the lower side surface of the disk portion 100. The through hole 230 can be located at the center of the disk portion 100.

[0102] The upward and downward movement of the shaft portion 320 can be guided by the through hole 230 of the disk portion 100. By guiding with the through hole 230, it is possible to prevent the shaft portion 320 from tilting in a direction different from the lifting direction, and the support portion 310 connected to the shaft portion 320 can always maintain a state parallel to the placement surface 210 of the bag portion 200.

[0103] A lifter driving portion 340 for pushing the shaft portion 320 upward or pulling it downward can be provided in the chamber 60.

[0104] The first rotating portion can be arranged facing the bottom surface of the disk portion 100. At this time, the lifter driving portion 340 can maintain a downward state of disengaging from the first rotating portion when the disk portion 100 or the bag portion 200 moves. At this time, the lifter unit 300 can be in a state of descending due to its own weight. The lifter driving portion 340 can rise and push the shaft portion 320 upward when the disk portion 100 and the bag portion 200 stop.

[0105] The bag portion 200 can be installed on the upper portion of the disk portion 100 in a manner facing the through hole 230 of the disk portion 100, and can be connected to the bag gear 14 through the through hole 230 of the disk portion 100. At this time, a bearing allowing the bag gear 14 or the bag portion 200 to rotate can be interposed between the bag gear 14 and the through hole 230 or between the bag portion 200 and the through hole 230.

[0106] A heating component 30 can be provided in the substrate 50 processing apparatus. The heating component 30 is installed inside the chamber 60 and can induce the processing of the raw material on the substrate 50 by heating to a high temperature state. The heating component 50 can be installed at a position spaced a certain distance from the first rotating part between the first rotating part and the bottom surface of the chamber 60.

[0107] When the disk part 100 rotates with the second rotation axis 20 as a reference, it is preferable that the heating component 30 extends at least from one side outer peripheral surface of the disk part 100 to the second rotation axis 20. In this embodiment, the heating component 30 can be used to uniformly heat each bag part 200 by means of the rotating disk part 100, so that the processing uniformity of a single substrate 50 and the processing uniformity between multiple substrates 50 can be improved.

[0108] The shape of the lifter groove 330 can be determined according to the shape of the support part 310. When the support part 310 descends, the substrate 50 can contact the placement surface 210. When the substrate 50 is placed in the bag part 200, the substrate 50 can contact the placement surface 210 and the support part 310 simultaneously.

[0109] Therefore, the shape of the lifter groove 330 can be such that the placement surface 210 and the upper side surface of the support part 310 are parallel when the lifter part 300 descends.

[0110] However, when the shape of the lifter groove 330 is larger than the shape of the support part 310, a blank space may be formed between the placed substrate 50 and the bag part 200. The above blank space may induce vibration due to the actions of the process itself such as rotation.

[0111] The placed substrate 50 can be disengaged from the placement surface 210, the support part 310, and the blank space, which results in an increase in factors that may cause a temperature gradient compared to the case without a blank space. Therefore, the lifter groove 330 can be formed in the same shape as the support part 310.

[0112] When the placed substrate 50 is processed using the heating component 30, since the substrate 50 contacts two different types of substances, namely the placement surface 210 and the support part 310, the temperature of the substrate 50 may be uneven. Structurally, the support part 310 can be located at the center of the bag part 200.

[0113] When the imaginary vertical line passing through the center of the bag part 200 is called the first position, at least one of the center of the bag, the support part 310, the shaft part 320, and the through hole 230 can be arranged at the first position.

[0114] When the heating member 30 heats the bag portion 200 below the disk portion 100, the amount of heat transferred from the heating member 30 to the center of the substrate 50 may be small. The temperature of the central portion of the measured substrate 50 may be lower than the temperature of the edge of the substrate 50.

[0115] The temperature gradient of the processed substrate 50 may be affected by the support portion 310. Only by reducing the influence of the temperature gradient caused by the support portion 310 as described above can the film deposited on the substrate 50 be processed uniformly.

[0116] To improve the influence of the temperature gradient of the substrate 50 caused by the support portion 310, as the shape of the support portion 310 in contact with the substrate 50, a shape that minimizes the contact area with the substrate 50 can be selected. The above shape needs to satisfy the condition that no impact that may form defects on the substrate 50 occurs when the lifting operation of the substrate 50 is performed by the lifter portion 300.

[0117] As an embodiment of the support portion 310, the support portion 310 may adopt a circular shape, which can be referred to as the first type. Similar to the shape of the support portion 310, the lifter groove 330 may also adopt a circular shape, and the radius of the lifter groove 330 may be larger than the radius of the support portion 310. When the lifter portion 300 descends, the support portion 310 can be inserted into the lifter groove 330 in an accurate and gapless state.

[0118] Since the upper side surface of the support portion 310 forms a flat plane with the placement surface 210, the thickness of the support portion 310 can be the same as the thickness of the lifter groove 330.

[0119] As another embodiment of the support portion 310, the support portion 310 may adopt a tripod shape, which can be referred to as the second type.

[0120] The second type of support portion 310 may include support pieces 316 and a central portion 314. A plurality of support pieces 316 can be provided. For example, three support pieces 316 can be provided. The support portion 310 can be in surface contact with the substrate 50 horizontally and parallelly.

[0121] Three support pieces 316 can be the most stable and simplest method for stably supporting a two-dimensional plane. That is, more than four support pieces 316 can be provided, but an increase in the number of support pieces 316 means an increase in the area of the support portion 310 in contact with the substrate 50. Therefore, as long as it is not necessary to improve the structural stability, the number of support pieces 316 being three is sufficient.

[0122] The support pieces 316 can be arranged at an angle of 120 degrees on a plane. The support pieces 316 can extend radially from the central portion 314. One end of each support piece 316 can be connected to the central portion 314. Similarly, the lifter groove 330 can be formed in the same shape as the support portion 310 of the second type.

[0123] When the length from the center of the central portion 314 to the other end of the support piece 316 is the same as the radius of the support portion 310 of the first type, the second type can significantly reduce the area of the support portion 310 compared to the first type. That is, in the case of the second type, the volume of the pocket portion 200 is reduced compared to the first type, so the temperature gradient of the substrate 50 caused by the second type can be significantly reduced compared to the first type.

[0124] The lower side surface of the central portion 314 can face the shaft portion 320, and a D-shaped cutting portion 320a can be provided on one side of the shaft portion 320. The D-shaped cutting portion 320a can prevent the rotation of the support portion 310 when the pocket portion 200 rotates according to the shape change of the support portion 310 with a reduced contact area with the substrate 50.

[0125] The shaft portion 320 can be perpendicularly connected to the lower side surface of the central portion 314, and the D-shaped cutting portion 320a can extend vertically along the shaft portion 320. According to the design of the support portion 310, the D-shaped cutting portion 320a can be additionally provided when necessary.

[0126] The average temperature of the substrate may be similar in the first type and the second type with respect to the temperature set by the user.

[0127] However, regarding the temperature difference in the horizontal and vertical directions, the second type can reduce the horizontal direction temperature difference compared to the first type.

[0128] Compared with either the first type or the second type or the case where the pocket portion 200 only revolves, when the pocket portion 200 rotates and revolves simultaneously, the thickness deviation of the deposited film can be reduced and the uniformity can be improved.

[0129] In addition, compared with the first type, the second type can reduce the deposited film deviation and improve the uniformity. This is because in the shape of the support portion 310, the second type can significantly reduce the area of the support portion 310 in direct contact with the substrate 50 compared to the first type, so the second type can improve the temperature gradient compared to the first type.

[0130] The etching process can be a process of removing the remaining parts except for the necessary circuit patterns, and the wet etching rate can be used to represent the degree of etching.

[0131] Compared with dry etching, wet etching can achieve isotropic etching. That is, over-etching in wet etching may cause an unnecessary etching phenomenon that penetrates into the lower part of the circuit pattern of the substrate 50, which can be called undercut.

[0132] Since the second type can improve the temperature gradient of the substrate compared with the first type, the undercut phenomenon of the second type can also be improved compared with the first type.

Claims

1. A substrate processing apparatus, characterized in that, comprising: a disk part, which is arranged inside the chamber for processing the substrate; a plurality of bag parts, which are provided in the disk part for placing each substrate and are arranged at equal angles with respect to the center of the disk part; and, a lifter part, which is used for lifting and lowering the substrate; the above-mentioned lifter parts are respectively provided in each of the above-mentioned bag parts and move up and down at the center of the above-mentioned bag part, wherein, a support part facing the above-mentioned substrate is provided in the above-mentioned lifter part, wherein, the above-mentioned support part is in surface contact with the above-mentioned substrate horizontally and parallelly, wherein, the above-mentioned support part includes a plurality of support pieces and a central part, wherein, the center of the above-mentioned central part coincides with the center of the above-mentioned bag part, one end of the above-mentioned support piece is connected to the above-mentioned central part, and the above-mentioned support pieces are arranged at equal angles with respect to the center of the above-mentioned central part and extend radially.

2. The substrate processing apparatus according to claim 1, characterized in that, a lifter groove for the above-mentioned support part to insert when the above-mentioned lifter part descends is provided in the above-mentioned bag part, the shape of the above-mentioned lifter groove is the same as that of the above-mentioned support part, and the thickness of the above-mentioned lifter groove is the same as that of the above-mentioned support part.

3. The substrate processing apparatus according to claim 1, characterized in that, the above-mentioned bag part includes a placement surface and a placement ridge, the above-mentioned placement surface is used for placing the above-mentioned substrate and has the same shape as the above-mentioned substrate, the above-mentioned placement ridges are formed oppositely along the periphery of the above-mentioned placement surface, the above-mentioned placement ridges protrude vertically upward with respect to the above-mentioned placement surface.

4. The substrate processing apparatus according to claim 1, characterized in that, the above-mentioned lifter part further includes a shaft part connected to the above-mentioned support part and extending in a direction perpendicular to the above-mentioned support part, a D-shaped cutting part for fixing the above-mentioned lifter part to the above-mentioned bag part by restricting the movement of the above-mentioned support part when rotating in the above-mentioned bag part is provided on one side of the above-mentioned shaft part, the above-mentioned D-shaped cutting part is formed by cutting a part of the above-mentioned shaft part along the axial direction and extends along the length direction of the above-mentioned shaft part.

5. The substrate processing apparatus according to claim 1, characterized in that, the above-mentioned bag part revolves around the center of the above-mentioned disk part by means of the rotation of the above-mentioned disk part, when the above-mentioned bag part revolves, the above-mentioned bag part rotates around the center of the above-mentioned bag part, a through hole penetrating the center of the above-mentioned bag part is provided, the above-mentioned lifter part further includes a shaft part connected to the above-mentioned support part and extending in a direction perpendicular to the above-mentioned support part, the lifting and lowering of the above-mentioned lifter part is guided by the above-mentioned shaft part inserted into the above-mentioned through hole, the D-shaped cutting part formed by cutting a part of the above-mentioned shaft part fixes the above-mentioned lifter part to the above-mentioned bag part when the above-mentioned bag part rotates, a lifter driving part spaced apart from the above-mentioned disk part by a certain distance when the above-mentioned disk part rotates is provided, the above-mentioned lifter driving part lifts the above-mentioned shaft part from the above-mentioned bag part by entering the through hole of the above-mentioned bag part and pushing the end of the above-mentioned shaft part in a state where the above-mentioned disk part stops.

6. The substrate processing apparatus according to claim 1, characterized in that, The lifting part further includes a shaft part connected to the supporting part and extending in a direction perpendicular to the supporting part. A through hole penetrating the center of the bag part is provided. The lifting of the lifting part is guided by the shaft part inserted into the through hole. In the bag part, a lifter groove is provided for the supporting part to insert when the lifting part descends. An air suction hole is formed in the lifter groove. An air passage for applying vacuum to the air suction hole is provided in the bag part or the disk part. The air suction hole is used to suck the supporting part towards the lifter groove side.

7. The substrate processing apparatus according to claim 1, characterized in that the lifting part further includes a shaft part connected to the supporting part and extending in a direction perpendicular to the supporting part. A lifter groove for the supporting part to insert is provided in the bag part. The supporting part includes an upper side of the row supporting part facing the substrate and a lower side of the supporting part disposed in the lifter groove. The upper side of the supporting part is more convex than the lower side of the supporting part. The upper side of the supporting part, which is more convex than the lower side of the supporting part, covers the gap between the lifter groove and the supporting part.

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