Semiconductor reaction chamber

Abstract

The present invention provides a semiconductor reaction chamber, comprising a process pipe, a connecting flange and an exhaust pipe, wherein the connecting flange is arranged on the outer peripheral wall of the bottom of the process pipe, and is used to be sealed and connected with the process door of the semiconductor reaction chamber; the exhaust pipe comprises a first exhaust pipe section, which is arranged in the process pipe and arranged along the circumference of the inner peripheral wall of the process pipe, and can be connected with a negative pressure device for providing negative pressure outside the process pipe, and a plurality of exhaust holes are arranged on the pipe wall of the first exhaust pipe section, and the plurality of exhaust holes are arranged at intervals along the circumference of the first exhaust pipe section, and are used to discharge the process gas in the process pipe. The semiconductor reaction chamber provided by the present invention can improve the exhaust effect, reduce the process gas leaking to the connecting flange, and thus reduce the possibility of rusting of the connecting flange.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a semiconductor reaction chamber. Background Art

[0002] As a front-end process equipment in the semiconductor manufacturing process, vertical furnace heat treatment equipment mainly performs heat treatment processes such as oxide film, annealing, and low-pressure chemical vapor deposition (LPCVD).

[0003] The vertical furnace includes a quartz process tube, a connecting flange and a process door. The connecting flange is arranged at the bottom of the quartz process tube and is made of stainless steel. The process door is arranged at the bottom of the quartz process tube and can be raised and lowered relative to the quartz process tube. When performing the oxidation film process, the wafer boat carrying the wafers on the process door rises and is sealed to the connecting flange, thereby forming a sealed process space with the quartz process tube. Hydrogen chloride (HCL) gas enters the quartz process tube from the air inlet of the quartz process tube and reacts with the wafers to form an oxide film. After the reaction, the process door carrying the wafer boat descends, and the residual hydrogen chloride gas is discharged from the exhaust port of the quartz process tube to the outside of the quartz process tube.

[0004] However, when the process door of the existing vertical furnace carries the wafer boat down, residual hydrogen chloride gas will leak from the bottom of the quartz process tube and diffuse to the vicinity of the connecting flange at the bottom of the quartz process tube. Although the connecting flange is made of stainless steel, the hydrogen chloride gas accumulated on the connecting flange for a long time will still cause the connecting flange to rust. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor reaction chamber, which can improve the exhaust effect and reduce the process gas leakage to the connecting flange, thereby reducing the possibility of rusting of the connecting flange.

[0006] To achieve the purpose of the present invention, a semiconductor reaction chamber is provided, comprising a process pipe, a connecting flange and an exhaust pipe, wherein the connecting flange is arranged on the outer peripheral wall of the bottom of the process pipe and is used for sealing connection with the process door of the semiconductor reaction chamber;

[0007] The exhaust pipe includes a first exhaust pipe section, which is arranged in the process pipe and along the circumference of the inner wall of the process pipe, and can be connected to a negative pressure device outside the process pipe for providing negative pressure. A plurality of exhaust holes are arranged on the pipe wall of the first exhaust pipe section, and the plurality of exhaust holes are arranged at intervals along the circumference of the first exhaust pipe section for discharging process gas in the process pipe.

[0008] Optionally, the plurality of exhaust holes include a plurality of first exhaust holes, and the plurality of first exhaust holes are arranged on a pipe wall of the first exhaust pipe segment on one side facing the axis of the process pipe, and are arranged at intervals along the circumference of the first exhaust pipe segment.

[0009] Optionally, the plurality of exhaust holes further include a plurality of second exhaust holes, and the plurality of second exhaust holes are arranged on a tube wall on one side of the first exhaust pipe section facing the bottom of the process pipe, and are arranged at intervals along the circumference of the first exhaust pipe section.

[0010] Optionally, a plurality of the first exhaust holes and a plurality of the second exhaust holes are arranged alternately at intervals.

[0011] Optionally, a plurality of the first exhaust holes are evenly spaced along the circumference of the first exhaust pipe segment.

[0012] Optionally, a plurality of the second exhaust holes are evenly spaced along the circumference of the first exhaust pipe segment.

[0013] Optionally, the exhaust pipe also includes a second exhaust pipe section, and an exhaust mounting hole is provided on the peripheral wall at the bottom of the process pipe. The second exhaust pipe section is inserted into the exhaust mounting hole, one end of the second exhaust pipe section is located outside the process pipe and connected to the negative pressure device, and the other end of the second exhaust pipe section is located inside the process pipe and connected to the first exhaust pipe section.

[0014] Optionally, the semiconductor reaction chamber further comprises an air inlet pipe, which is arranged on the peripheral wall of the bottom of the process pipe and is respectively connected with the interior of the process pipe and a gas source for providing the process gas, and the air inlet pipe is used to introduce the process gas into the interior of the process pipe;

[0015] Furthermore, in the axial direction of the process pipe, the air inlet pipe is away from the bottom of the process pipe relative to the exhaust pipe.

[0016] Optionally, the air inlet pipe may include a first air inlet pipe section and a second air inlet pipe section, and an air inlet mounting hole is provided on the peripheral wall at the bottom of the process pipe. The first air inlet pipe section is inserted into the air inlet mounting hole, one end of which is located outside the process pipe and is used to be connected to a gas source providing the process gas, and the other end is located inside the process pipe. The second air inlet pipe section is arranged inside the process pipe, one end of which is connected to the interior of the process pipe, and the other end of which is connected to the other end of the first air inlet pipe section.

[0017] Optionally, in the axial direction of the process tube, the air inlet mounting hole is away from the bottom of the process tube relative to the air outlet mounting hole.

[0018] The present invention has the following beneficial effects:

[0019] In the semiconductor reaction chamber provided by the present invention, the process gas remaining in the process tube can be discharged into the first exhaust pipe section through multiple exhaust holes, and then be drawn out of the first exhaust pipe section by the negative pressure device, so as to be discharged outside the process tube. Since the first exhaust pipe section is arranged along the circumferential direction of the inner circumferential wall of the process tube, and the multiple exhaust holes are arranged at intervals along the circumferential direction of the first exhaust pipe section, the process gas remaining in the process tube can not only be discharged to the outside of the process tube through the multiple exhaust holes, but also can be discharged to the outside of the process tube from different positions in the circumferential direction of the inside of the process tube, thereby improving the exhaust effect, reducing the process gas leaking from the bottom of the process tube, and then reducing the process gas leaking to the connecting flange, and further reducing the possibility of rusting of the connecting flange. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic cross-sectional view of a supporting component of a semiconductor reaction chamber provided by an embodiment of the present invention when entering and exiting a process tube;

[0021] Figure 2 A schematic cross-sectional structural diagram of a semiconductor reaction chamber provided by an embodiment of the present invention;

[0022] Figure 3 A schematic structural diagram of a semiconductor reaction chamber provided by an embodiment of the present invention;

[0023] Figure 4 for Figure 1 A schematic diagram of the cross-sectional structure of the bottom of the medium process pipe;

[0024] Figure 5 A schematic diagram of a top view and cross-sectional structure of a semiconductor reaction chamber provided by an embodiment of the present invention;

[0025] Figure 6 for Figure 5 A schematic diagram of a local enlarged structure;

[0026] Description of reference numerals:

[0027] 1-process pipe; 2-connecting flange; 3-exhaust pipe; 31-second exhaust pipe section; 32-first exhaust pipe section; 33-first exhaust hole; 34-second exhaust hole; 41-first air inlet pipe section; 42-second air inlet pipe section; 5-process door; 6-bearing component; 7-insulation component; 8-factory negative pressure pipe. DETAILED DESCRIPTION

[0028] In order to enable those skilled in the art to better understand the technical solution of the present invention, the semiconductor reaction chamber provided by the present invention is described in detail below with reference to the accompanying drawings.

[0029] like Figure 1-Figure 6As shown, an embodiment of the present invention provides a semiconductor reaction chamber, including a process tube 1, a connecting flange 2 and an exhaust pipe 3, wherein the connecting flange 2 is arranged on the outer peripheral wall at the bottom of the process tube 1, and is used for sealing connection with the process door 5 of the semiconductor reaction chamber; the exhaust pipe 3 includes a first exhaust pipe section 32, the first exhaust pipe section 32 is arranged in the process tube 1, and is arranged circumferentially along the inner peripheral wall of the process tube 1, and can be connected with a negative pressure device (not shown in the figure) outside the process tube 1 for providing negative pressure, and a plurality of exhaust holes are arranged on the tube wall of the first exhaust pipe section 32, and the plurality of exhaust holes are arranged at intervals along the circumference of the first exhaust pipe section 32, for discharging process gas in the process tube 1.

[0030] In the semiconductor reaction chamber provided by the embodiment of the present invention, the process gas remaining in the process tube 1 can be discharged into the first exhaust pipe section 32 through multiple exhaust holes, and then be drawn out from the first exhaust pipe section 32 by the negative pressure device, so as to be discharged to the outside of the process tube 1. Since the first exhaust pipe section 32 is arranged along the circumferential direction of the inner wall of the process tube 1, and the multiple exhaust holes are arranged at intervals along the circumferential direction of the first exhaust pipe section 21, the process gas remaining in the process tube 1 can not only be discharged to the outside of the process tube 1 through the multiple exhaust holes, but also can be discharged to the outside of the process tube 1 from different positions in the circumferential direction inside the process tube 1, thereby improving the exhaust effect, reducing the process gas leaking from the bottom of the process tube 1, and then reducing the process gas leaking to the connecting flange 2, and further reducing the possibility of rusting of the connecting flange 2.

[0031] like Figure 1 As shown, in one embodiment of the present invention, the semiconductor reaction chamber may further include a process door 5, on which a bearing component 6 and a heat preservation component 7 are arranged, and the heat preservation component 7 and the bearing component 6 are arranged on the process door 5 in sequence, the bearing component 6 is used to bear the wafer, and the heat preservation component 7 is used to keep the wafer warm, and the first exhaust pipe section 32 may be arranged in a ring shape along the circumferential direction of the inner circumferential wall of the process tube 1, and the inner diameter is greater than the maximum radial dimension of the bearing component 6 and the heat preservation component 7. In this way, the heat preservation component 7 and the bearing component 6 can pass through the first exhaust pipe section 32 when they are lifted and lowered in and out of the process tube 1 along with the process door 5, so as to avoid interference and collision between the heat preservation component 7 and the bearing component 6 and the first exhaust pipe section 32.

[0032] like Figure 1 , Figure 2 and Figure 4As shown, in actual application, an opening is provided at the bottom of the process tube 1, and an air inlet pipe is provided on the peripheral wall at the bottom of the process tube 1. During the semiconductor process, the process door 5 rises and is sealed and connected with the connecting flange 2 at the bottom of the process tube 1, and the opening at the bottom of the process tube 1 is closed, so that a sealed space is formed in the process tube 1, so that the semiconductor process can be carried out. During the rising process of the process door 5, the heat preservation component 7 and the bearing component 6 rise with the process door 5, enter the process tube 1 from the opening at the bottom of the process tube 1, and pass through the first exhaust pipe section 32. Afterwards, the process gas (optionally, it can be hydrogen chloride (HCL) gas) enters the process tube 1 through the air inlet pipe, reacts with the wafer carried by the bearing component 6, and realizes the semiconductor process reaction. Afterwards, the process door is lowered and separated from the connecting flange 2, and the opening at the bottom of the process pipe 1 is opened. During the process of the process door 5 being lowered, the heat-insulating component 7 and the bearing component 6 are lowered along with the process door 5, and pass through the first exhaust pipe section 32, and finally exit from the opening at the bottom of the process pipe 1 to the outside of the process pipe 1, and the process gas remaining in the process pipe 1 will be driven to flow toward the bottom of the process pipe 1, and discharged into the first exhaust pipe section 32 through a plurality of exhaust holes, and then drawn out from the first exhaust pipe section 32 by the negative pressure device, and thus discharged to the outside of the process pipe 1. Since the first exhaust pipe section 32 is arranged along the circumferential direction of the inner peripheral wall of the process pipe 1, and a plurality of exhaust holes are arranged at intervals along the circumferential direction of the first exhaust pipe section 32, the residual process gas can not only be discharged to the outside of the process pipe 1 through a plurality of exhaust holes, but also can be discharged to the outside of the process pipe 1 from different positions on the circumference of the inner part of the process pipe 1, thereby improving the exhaust effect, reducing the process gas leaking from the bottom of the process pipe 1, and then reducing the process gas leaking to the connecting flange 2, and further reducing the possibility of rusting of the connecting flange 2.

[0033] Optionally, the carrying component 6 may include a wafer boat.

[0034] Optionally, the heat-insulating component 7 may include a heat-insulating barrel.

[0035] like Figure 1-Figure 6 As shown, in one embodiment of the present invention, the plurality of exhaust holes may include a plurality of first exhaust holes 33 , which are arranged on a side wall of the first exhaust pipe section 32 facing the axis of the process pipe 1 and are arranged at intervals along the circumference of the first exhaust pipe section 32 .

[0036] Since the multiple first exhaust holes 33 are arranged on the tube wall of the first exhaust pipe section 32 on one side facing the axis of the process tube 1, and are arranged at circumferential intervals along the first exhaust pipe section 32, the residual process gas driven to flow toward the bottom of the process tube 1 during the descent of the process door 5 can be discharged to the outside of the process tube 1 through the multiple first exhaust holes 33 and the first exhaust pipe section 32 in sequence, so that the residual process gas can not only be discharged to the outside of the process tube 1 through the multiple first exhaust holes 33, but also can be discharged to the outside of the process tube 1 from different positions on the circumference of the inside of the process tube 1.

[0037] like Figure 4-Figure 6 As shown, in one embodiment of the present invention, the plurality of exhaust holes may further include a plurality of second exhaust holes 34, and the plurality of second exhaust holes 34 are arranged on a side wall of the first exhaust pipe section 32 facing the bottom of the process pipe 1, and are arranged at intervals along the circumference of the first exhaust pipe section 32.

[0038] like Figure 4-Figure 6 As shown, in this way, during the process of the process door 5 descending, the residual process gas driven to flow toward the bottom of the process tube 1 can not only be discharged to the outside of the process tube 1 through the multiple first exhaust holes 33 and the first exhaust pipe section 32 in sequence, but also can be discharged to the outside of the process tube 1 through the multiple second exhaust holes 34 and the first exhaust pipe section 32 in sequence, so that the residual process gas in the process tube 1 can first pass through the multiple first exhaust holes 33 and be discharged to the outside of the process tube 1 from different positions on the circumference of the process tube 1 (such as Figure 4 Downward-pointing arrow and Figure 5 and Figure 6 As shown by the arrow in the figure, the residual process gas that does not pass through the first exhaust hole 33 and continues to flow toward the bottom of the process tube 1 can pass through the plurality of second exhaust holes 34 and be discharged from different positions on the circumference of the process tube 1 to the outside of the process tube 1 (such as Figure 4 As shown by the upward arrow in the figure), the exhaust effect can be further improved, the process gas leakage from the bottom of the process pipe 1 can be further reduced, and the process gas leakage to the connecting flange 2 can be further reduced, thereby further reducing the possibility of rusting of the connecting flange 2.

[0039] like Figure 4-Figure 6 As shown, in one embodiment of the present invention, a plurality of first exhaust holes 33 and a plurality of second exhaust holes 34 may be alternately arranged.

[0040] That is to say, a second exhaust hole 34 is arranged on the side wall of the first exhaust pipe section 32 facing the bottom of the process pipe 1 at a position corresponding to the position between the two adjacent first exhaust holes 33, and a first exhaust hole 33 is arranged on the side wall of the first exhaust pipe section 32 facing the axis of the process pipe 1 at a position corresponding to the position between the two adjacent second exhaust holes 34. In this way, on the one hand, the arrangement of the multiple exhaust holes can be more dense, thereby further improving the exhaust effect. On the other hand, the residual process gas that continues to flow toward the bottom of the process pipe 1 through the two adjacent first exhaust holes 33 can be discharged from the second exhaust hole 34 arranged on the side wall of the first exhaust pipe section 32 facing the bottom of the process pipe 1 at a position corresponding to the position between the two adjacent first exhaust holes 33, thereby more effectively allowing the residual process gas that continues to flow toward the bottom of the process pipe 1 without passing through the first exhaust hole 33 to be discharged, thereby further improving the exhaust effect, further reducing the process gas leaking from the bottom of the process pipe 1, and further reducing the process gas leaking to the connecting flange 2, thereby further reducing the possibility of rusting of the connecting flange 2.

[0041] In one embodiment of the present invention, a plurality of first exhaust holes 33 may be evenly spaced along the circumference of the first exhaust pipe section 32. In this way, the process gas can be evenly discharged from the circumference of the process pipe 1, reducing the mutual interference of the process gas flow, thereby further improving the exhaust effect, further reducing the process gas leaking from the bottom of the process pipe 1, and further reducing the process gas leaking to the connecting flange 2, thereby further reducing the possibility of rusting of the connecting flange 2.

[0042] In one embodiment of the present invention, a plurality of second exhaust holes 34 may be evenly spaced along the circumference of the first exhaust pipe section 32. In this way, the process gas can be evenly discharged from the circumference of the process pipe 1, reducing the mutual interference of the process gas flow, thereby further improving the exhaust effect, further reducing the process gas leaking from the bottom of the process pipe 1, and further reducing the process gas leaking to the connecting flange 2, thereby further reducing the possibility of rusting of the connecting flange 2.

[0043] like Figure 1 , Figure 2 , Figure 4 and Figure 5 As shown, in one embodiment of the present invention, the exhaust pipe also includes a second exhaust pipe section 31, and an exhaust mounting hole can be provided on the peripheral wall at the bottom of the process pipe 1. The second exhaust pipe section 31 is inserted into the exhaust mounting hole, one end of which is located outside the process pipe 1 and connected to the negative pressure device, and the other end of which is located inside the process pipe 1 and connected to the first exhaust pipe section 32.

[0044] That is, the communication between the first exhaust pipe section 32 disposed in the process pipe 1 and the negative pressure device outside the process pipe 1 is achieved through the second exhaust pipe section 31 penetrating the peripheral wall at the bottom of the process pipe 1. When exhausting the semiconductor reaction chamber, the process gas can first be discharged into the first exhaust pipe section 32 through the plurality of first exhaust holes 33 and the plurality of second exhaust holes 34, and then discharged into the second exhaust pipe section 31 through the first exhaust pipe section 32, and then drawn out from the second exhaust pipe section 31 by the negative pressure device.

[0045] like Figure 5 As shown, in actual application, optionally, the negative pressure device may include a factory exhaust device, and the second exhaust pipe section 31 may be connected to the factory exhaust device through a factory negative pressure pipe 8 .

[0046] In one embodiment of the present invention, the semiconductor reaction chamber may also include an air inlet pipe, which is arranged on the peripheral wall of the bottom of the process tube 1 and is respectively connected to the interior of the process tube 1 and a gas source for providing process gas, and the air inlet pipe is used to introduce process gas into the interior of the process tube 1; and in the axial direction of the process tube 1, the air inlet pipe is away from the bottom of the process tube 1 relative to the exhaust pipe 3.

[0047] By making the air inlet pipe away from the bottom of the process pipe 1 relative to the exhaust pipe 3 in the axial direction of the process pipe 1, on the one hand, interference between the air inlet pipe and the exhaust pipe 3 can be avoided, and the disassembly and assembly of the air inlet pipe and the exhaust pipe 3 can be facilitated; on the other hand, the exhaust pipe 3 can be made closer to the bottom of the process pipe 1, thereby further improving the exhaust effect, further reducing the process gas leakage from the bottom of the process pipe 1, and then further reducing the process gas leakage to the connecting flange 2, and further reducing the possibility of rusting of the connecting flange 2.

[0048] like Figure 2 and Figure 3 As shown, in one embodiment of the present invention, the air inlet pipe may include a first air inlet pipe section 41 and a second air inlet pipe section 42. An air inlet mounting hole is provided on the peripheral wall at the bottom of the process pipe 1. The first air inlet pipe section 41 is inserted into the air inlet mounting hole, one end of which is located outside the process pipe 1 and is used to be connected to a gas source for providing process gas, and the other end is located inside the process pipe 1. The second air inlet pipe section 42 is provided inside the process pipe 1, one end of which is connected to the interior of the process pipe 1, and the other end is connected to the other end of the first air inlet pipe section 41.

[0049] In the semiconductor process, the gas source is used to provide process gas. The process gas provided by the gas source enters the second gas inlet pipe section 42 through the first gas inlet pipe section 41 , and then enters the process pipe 1 through the second gas inlet pipe section 42 .

[0050] like Figure 2As shown, optionally, the second air inlet pipe section 42 can extend from the bottom of the process tube 1 to the top of the process tube 1, and one end of the second air inlet pipe section 42 located at the top of the process tube 1 is an end of the second air inlet pipe section 42 connected to the inside of the process tube 1. In this way, the process gas can enter the process tube 1 at the bottom of the process tube 1, and the process gas can diffuse from the top to the bottom of the process tube 1 and react with the wafers in the process tube 1, so that the semiconductor process can have a better effect.

[0051] like Figure 2 As shown, optionally, the top wall of the process tube 1 may be arc-shaped, and one end of the second air inlet pipe section 42 located at the top of the process tube 1 may be located in the middle of the top of the process tube 1. In this way, when the process gas enters the process tube 1 from the top of the process tube 1, the top wall of the process tube 1 can make the process gas diffuse evenly from the middle of the top of the process tube 1 to the surroundings (such as Figure 2 As shown by the arrow in the middle, the process gas can be evenly diffused from the top to the bottom of the process tube 1, thereby improving the uniformity of the semiconductor process and further improving the semiconductor process effect.

[0052] In one embodiment of the present invention, in the axial direction of the process tube 1 , the air inlet mounting hole may be farther away from the bottom of the process tube 1 relative to the air outlet mounting hole.

[0053] In this way, the first air inlet pipe section 41 and the second air inlet pipe section 42 can be moved away from the bottom of the process pipe 1 relative to the second exhaust pipe section 31 and the first exhaust pipe section 32 in the axial direction of the process pipe 1, thereby avoiding interference between the first air inlet pipe section 41 and the second air inlet pipe section 42 and the second exhaust pipe section 31 and the first exhaust pipe section 32, thereby facilitating the disassembly and assembly of the first air inlet pipe section 41, the second air inlet pipe section 42, the second exhaust pipe section 31 and the first exhaust pipe section 32, and making the second exhaust pipe section 31 and the first exhaust pipe section 32 closer to the bottom of the process pipe 1, that is, making the exhaust pipe 3 closer to the bottom of the process pipe 1, thereby further improving the exhaust effect, further reducing the process gas leaking from the bottom of the process pipe 1, and further reducing the process gas leaking to the connecting flange 2, thereby further reducing the possibility of rusting of the connecting flange 2.

[0054] In summary, the semiconductor reaction chamber provided by the embodiment of the present invention can improve the exhaust effect and reduce the process gas leakage to the connecting flange 2, thereby reducing the possibility of rust on the connecting flange 2.

[0055] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor reaction chamber, characterized in that: It includes a process pipe, a connecting flange and an exhaust pipe, wherein the connecting flange is arranged on the outer peripheral wall of the bottom of the process pipe and is used for sealing connection with the process door of the semiconductor reaction chamber; The exhaust pipe includes a first exhaust pipe section arranged at the bottom of the process pipe, the first exhaust pipe section is arranged inside the process pipe and along the circumference of the inner wall of the process pipe, and can be connected to a negative pressure device outside the process pipe for providing negative pressure, a plurality of exhaust holes are arranged on the pipe wall of the first exhaust pipe section, and the plurality of exhaust holes are arranged at intervals along the circumference of the first exhaust pipe section for discharging process gas in the process pipe.

2. The semiconductor reaction chamber according to claim 1, characterized in that: The plurality of exhaust holes include a plurality of first exhaust holes, which are arranged on a pipe wall of the first exhaust pipe section facing the axis of the process pipe and are spaced apart along the circumference of the first exhaust pipe section.

3. The semiconductor reaction chamber according to claim 2, characterized in that: The plurality of exhaust holes further include a plurality of second exhaust holes, which are arranged on a pipe wall of the first exhaust pipe section facing the bottom of the process pipe and are spaced apart along the circumference of the first exhaust pipe section.

4. The semiconductor reaction chamber according to claim 3, characterized in that: The plurality of first exhaust holes and the plurality of second exhaust holes are alternately arranged.

5. The semiconductor reaction chamber according to claim 2, characterized in that: The plurality of first exhaust holes are evenly spaced along the circumference of the first exhaust pipe section.

6. The semiconductor reaction chamber according to claim 3, characterized in that: The plurality of second exhaust holes are evenly spaced along the circumference of the first exhaust pipe segment.

7. The semiconductor reaction chamber according to claim 1, characterized in that: The exhaust pipe also includes a second exhaust pipe section. An exhaust mounting hole is provided on the peripheral wall at the bottom of the process pipe. The second exhaust pipe section is inserted into the exhaust mounting hole. One end of the second exhaust pipe section is located outside the process pipe and connected to the negative pressure device, and the other end is located inside the process pipe and connected to the first exhaust pipe section.

8. The semiconductor reaction chamber according to claim 7, characterized in that: The semiconductor reaction chamber further comprises an air inlet pipe, which is arranged on the peripheral wall of the bottom of the process pipe and is respectively connected with the interior of the process pipe and a gas source for providing the process gas, and the air inlet pipe is used to introduce the process gas into the interior of the process pipe; Furthermore, in the axial direction of the process pipe, the air inlet pipe is away from the bottom of the process pipe relative to the exhaust pipe.

9. The semiconductor reaction chamber according to claim 8, characterized in that: The air inlet pipe includes a first air inlet pipe section and a second air inlet pipe section. An air inlet mounting hole is provided on the peripheral wall at the bottom of the process pipe. The first air inlet pipe section is inserted into the air inlet mounting hole, one end of which is located outside the process pipe and is used to be connected to a gas source providing the process gas, and the other end is located inside the process pipe. The second air inlet pipe section is provided inside the process pipe, one end of which is connected to the interior of the process pipe, and the other end of which is connected to the other end of the first air inlet pipe section.

10. The semiconductor reaction chamber according to claim 9, characterized in that: In the axial direction of the process tube, the air inlet mounting hole is farther away from the bottom of the process tube than the air outlet mounting hole.

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