Circuit control method, unit and device

Abstract

The present application provides a circuit control method, unit and device, the method is applied to a power supply device, the power supply device includes a switching boost circuit, the switching boost circuit includes at least one power semiconductor device, the circuit control method includes collecting the input signal and output signal of the switching boost circuit; according to the input signal, output signal and circuit information of the switching boost circuit, determining the control scheme with the highest power conversion efficiency from multiple control schemes to be selected as the target control scheme, the control scheme to be selected includes the control scheme for the at least one power semiconductor device corresponding to each of the multiple working modes of the switching boost circuit; controlling the conduction and shutdown of the at least one power semiconductor device according to the target control scheme. The present application can adjust the control scheme of the power semiconductor device in real time to improve the overall power conversion efficiency of the circuit.

Description

Technical Field

[0001] The present application relates to the field of power semiconductor device control technology, and in particular to a circuit control method, unit and device. Background Art

[0002] At present, electricity, as a major energy carrier, needs to be converted into AC to DC, DC to AC, and high voltage to low voltage during use. Therefore, the efficiency of power conversion will also largely determine the efficiency of electricity use.

[0003] Among them, power semiconductor devices play a key role in the power conversion process of the switching boost circuit, and are also the key to the efficiency loss in the conversion process. The losses of power semiconductor devices are mainly divided into two categories, conduction loss and switching loss. The size of these two losses is closely related to the load size and the control method of the power semiconductor device. Different control methods of power semiconductor devices can produce completely different switching losses, and will also affect the conduction loss to a certain extent, affecting the power conversion efficiency of the switching boost circuit. Summary of the invention

[0004] One object of the present application is to provide a circuit control method, which determines the control scheme of the power semiconductor device with the highest power conversion efficiency by real-time acquisition of the input signal and output signal of the switching boost circuit, and can adjust the control scheme of the power semiconductor device according to the input signal and the output signal in real time to improve the overall power conversion efficiency of the circuit. Another object of the present application is to provide a circuit control unit. Another object of the present application is to provide a power supply device. Another object of the present application is to provide a computer device. Another object of the present application is to provide a readable medium. Another object of the present application is to provide a computer program product.

[0005] In order to achieve the above objectives, the present application discloses, on one hand, a circuit control method, which is applied to a power supply device, wherein the power supply device includes a switching boost circuit, and the switching boost circuit includes at least one power semiconductor device. The circuit control method includes:

[0006] collecting input signals and output signals of the switching boost circuit;

[0007] According to the input signal, the output signal and the circuit information of the switching boost circuit, a control scheme with the highest power conversion efficiency is determined as a target control scheme from a plurality of control schemes to be selected, wherein the control scheme to be selected includes a control scheme for the at least one power semiconductor device corresponding to each of the plurality of working modes of the switching boost circuit;

[0008] The at least one power semiconductor device is controlled to be turned on and off according to the target control scheme.

[0009] Optionally, determining a control scheme with the highest power conversion efficiency as a target control scheme from a plurality of control schemes to be selected according to the input signal, the output signal and the circuit information of the switching boost circuit includes:

[0010] Calculating the circuit loss of the switching boost circuit under multiple control schemes to be selected according to the input signal, output signal and circuit information of the switching boost circuit, wherein the circuit loss includes inductor core loss, inductor winding loss, switch tube turn-on loss, switch tube turn-off loss, switch tube conduction loss, rectifier diode conduction loss and rectifier diode switch loss;

[0011] Determine the power conversion efficiency of each control scheme according to the circuit loss and output signal of each control scheme to be selected;

[0012] A control scheme with the highest electric energy conversion efficiency among multiple control schemes to be selected is determined as a target control scheme.

[0013] Optionally, the multiple working modes include intermittent mode and / or continuous mode;

[0014] The control scheme to be selected includes a control scheme for the at least one power semiconductor device corresponding to each of the operating modes in the discontinuous mode and / or the continuous mode of the switching boost circuit;

[0015] The control scheme for the at least one power semiconductor device corresponding to the continuous mode includes a continuous conduction mode control scheme;

[0016] The control scheme for the at least one power semiconductor device corresponding to the discontinuous mode includes an Nth valley discontinuous conduction mode control scheme, where N includes at least one positive integer greater than or equal to 1.

[0017] Optionally, the method comprises:

[0018] When the power of the switching boost circuit is greater than or equal to a first preset power, the multiple control schemes to be selected include a continuous conduction mode control scheme and an Nth valley discontinuous conduction mode control scheme.

[0019] Optionally, the method comprises:

[0020] When the power of the switching boost circuit is less than or equal to a second preset power, the multiple control schemes to be selected include the Mth valley intermittent conduction mode control scheme, the second preset power is less than the first preset power, and M includes at least one positive integer greater than or equal to a preset value.

[0021] Optionally, collecting the input signal and the output signal of the switching boost circuit includes:

[0022] The input signal and the output signal of the switching boost circuit are collected every one or more preset control cycles.

[0023] Optionally, the method includes: pre-forming a correspondence between different input signals and output signals and a plurality of control schemes.

[0024] The present application also discloses a circuit control unit, which is applied to a power supply device, wherein the power supply device includes a switching boost circuit, the switching boost circuit includes at least one power semiconductor device, and the circuit control unit includes:

[0025] A signal acquisition module, used for acquiring input signals and output signals of the switching boost circuit;

[0026] a control adjustment module, configured to determine, according to the input signal, the output signal and the circuit information of the switching boost circuit, a control scheme with the highest power conversion efficiency from a plurality of control schemes to be selected as a target control scheme, wherein the control scheme to be selected includes a control scheme for the at least one power semiconductor device corresponding to each of the plurality of working modes of the switching boost circuit;

[0027] A switch control module is used to control the on and off of the at least one power semiconductor device according to the target control scheme.

[0028] The present application also discloses a power supply device, including a switching boost circuit and the circuit control unit as described above.

[0029] The present application also discloses a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor.

[0030] When the processor executes the program, the method described above is implemented.

[0031] The present application also discloses a computer-readable medium having a computer program stored thereon.

[0032] When the program is executed by a processor, the method described above is implemented.

[0033] The present application also discloses a computer program product, which includes a computer program. When the computer program is executed by a processor, the method described above is implemented.

[0034] The control method of the switch boost circuit of the present application collects the input signal and output signal of the switch boost circuit, and determines the control scheme with the highest power conversion efficiency from multiple control schemes to be selected as the target control scheme according to the input signal, output signal and circuit information of the switch boost circuit, and the control scheme to be selected includes the control scheme for the at least one power semiconductor device corresponding to each of the multiple working modes of the switch boost circuit. Then, the conduction and shutdown of the at least one power semiconductor device are controlled according to the target control scheme. Thus, the present application can collect the input signal and output signal of the switch boost circuit in real time, and determine the target control scheme with the highest power conversion efficiency from multiple control schemes to be selected according to the input signal and output signal of the switch boost circuit. Then, the conduction and shutdown of at least one power semiconductor device in the switch boost circuit are controlled according to the target control scheme. Therefore, the present application can calculate the power conversion efficiency of the control scheme for the power semiconductor device in the switching boost circuit corresponding to each of the multiple working modes of the switching boost circuit according to the changes in the input signal and the output signal of the switching boost circuit, select the control scheme with the highest power conversion efficiency as the target control scheme, determine the optimal control scheme for the power semiconductor device in real time, reduce the conduction loss and switching loss of the power semiconductor device, and improve the power conversion efficiency of the entire switching boost circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0036] Figure 1 A flow chart showing a specific embodiment of a method for controlling a power semiconductor device in a switching boost circuit of the present application;

[0037] Figure 2 to Figure 5 A schematic diagram showing a switching boost circuit of a specific embodiment of a method for controlling a power semiconductor device of a switching boost circuit of the present application;

[0038] Figure 6 A flowchart showing a specific embodiment S200 of the control method of the power semiconductor device of the switching boost circuit of the present application;

[0039] Figure 7 to Figure 10 A schematic diagram showing a control scheme of a specific embodiment of a control method for a power semiconductor device in a switching boost circuit of the present application;

[0040] Fig.11A flowchart showing a specific embodiment S000 of a control method for a power semiconductor device in a switching boost circuit of the present application;

[0041] Fig.12 A structural diagram showing a specific embodiment of the circuit control unit of the present application;

[0042] Fig.13 A schematic diagram of the structure of a computer device suitable for implementing an embodiment of the present application is shown. DETAILED DESCRIPTION

[0043] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0044] According to one aspect of the present application, this embodiment discloses a circuit control method. The circuit control method is applied to a power supply device, wherein the power supply device includes a switching boost circuit, and the switching boost circuit includes at least one power semiconductor device. Figure 1 As shown, in this embodiment, the method includes:

[0045] S100: Collecting input signals and output signals of the switching boost circuit. S200: Determining a control scheme with the highest power conversion efficiency as a target control scheme from a plurality of control schemes to be selected based on the input signals, the output signals and circuit information of the switching boost circuit, wherein the control scheme to be selected includes a control scheme for at least one power semiconductor device corresponding to each of a plurality of working modes of the switching boost circuit.

[0046] S300: Controlling the on and off of at least one power semiconductor device according to a target control scheme.

[0047] The control method of the switch boost circuit of the present application collects the input signal and output signal of the switch boost circuit, and determines the control scheme with the highest power conversion efficiency from multiple control schemes to be selected as the target control scheme according to the input signal, output signal and circuit information of the switch boost circuit, and the control scheme to be selected includes the control scheme for the at least one power semiconductor device corresponding to each of the multiple working modes of the switch boost circuit. Then, the conduction and shutdown of the at least one power semiconductor device are controlled according to the target control scheme. Thus, the present application can collect the input signal and output signal of the switch boost circuit in real time, and determine the target control scheme with the highest power conversion efficiency from multiple control schemes to be selected according to the input signal and output signal of the switch boost circuit. Then, the conduction and shutdown of at least one power semiconductor device in the switch boost circuit are controlled according to the target control scheme. Therefore, the present application can calculate the power conversion efficiency of the control scheme for the power semiconductor device in the switching boost circuit corresponding to each of the multiple working modes of the switching boost circuit according to the changes in the input signal and the output signal of the switching boost circuit, select the control scheme with the highest power conversion efficiency as the target control scheme, determine the optimal control scheme for the power semiconductor device in real time, reduce the conduction loss and switching loss of the power semiconductor device, and improve the power conversion efficiency of the entire switching boost circuit.

[0048] Optionally, the input signal and the output signal of the switching boost circuit specifically include an input voltage, an input current, an output voltage and an output current of the switching boost circuit.

[0049] Specifically, electrical signals such as input current, input voltage, output current, and output voltage of the switching boost circuit can be collected by a collection circuit or a collection device in the power supply device.

[0050] like Figure 2 to Figure 5 As shown, Figure 2 to Figure 5 The four boost circuits shown in the figure are typical switch boost circuits. The circuit control method of the present application can be applied to Figure 2 to Figure 5 The boost circuit shown can also be applied to other multi-phase boost circuits, or to switch boost circuits of other structures, which is only exemplified here and is not limited in the present application. Figure 2 to Figure 4 The input voltage and output voltage of the switching boost circuit are U 1 and U 2 , the input current and output current are I 1 and I 2 , the inductor current on the input side is i L , the voltage between the drain D and source S of the field effect tube is V s , the threshold voltage of the field effect tube is Vg . Figure 5 The switching boost circuit is a three-phase AC input boost circuit with an input voltage of U 1 , U 2 and U 3 , the output voltage is U 4 , the output current is I 4 .

[0051] The input voltage and input current input to the input end of the switching boost circuit need to be converted into electrical energy by the switching boost circuit to obtain the output voltage and output current at the output end. For example, the boost circuit can boost the input voltage at the input end to obtain a higher output voltage to provide a higher output voltage to the load connected to the output end.

[0052] Among them, the output voltage and output current of the switching boost circuit are determined by the size of the load connected to its output end, and the input voltage of the input end of the switching boost circuit is in a stable state. The voltage and current of each component in the switching boost circuit can be obtained from the output voltage, output current and input voltage as well as the circuit information of the switching boost circuit, and then the power conversion efficiency of the switching boost circuit can be determined. Therefore, the input voltage, output current and output voltage of the current switching boost circuit can be collected, and the power conversion efficiency of the entire switching boost circuit under different power semiconductor device control schemes can be determined according to the circuit information of the current switching boost circuit.

[0053] Among them, the circuit information of the switching boost circuit may include the circuit topology and the electrical parameters of all components in the circuit, and the electrical parameters include but are not limited to the resistance value of the resistor, the capacitance value of the capacitor, and the threshold voltage of the switch tube. The power semiconductor devices in the switching boost circuit usually include switching elements, such as field effect transistors, triodes, diodes and other devices, or other switching tube components, which are only illustrated here. Among them, the field effect transistor can be a junction field effect transistor (JFET) or an insulated gate field effect transistor (MOSFET). JFET and MOSFET can use P channel or N channel, and MOSFET can be enhancement type or depletion type.

[0054] In an optional embodiment, if Figure 6 As shown, the step S200 determines the control scheme with the highest power conversion efficiency as the target control scheme from a plurality of control schemes to be selected according to the input signal, the output signal and the circuit information of the switch boost circuit, and specifically includes:

[0055] S210: Calculate the circuit loss of the switching boost circuit under multiple control schemes to be selected based on the input signal, output signal and circuit information of the switching boost circuit, the circuit loss includes inductor core loss, inductor winding loss, switch tube turn-on loss, switch tube turn-off loss, switch tube conduction loss, rectifier diode conduction loss and rectifier diode switching loss.

[0056] S220: Determine the power conversion efficiency of each control scheme according to the circuit loss and output signal of each control scheme to be selected.

[0057] S230: Determine a control scheme with the highest power conversion efficiency among multiple control schemes to be selected as a target control scheme.

[0058] Specifically, it is understandable that Figure 2 Taking the boost DC-to-DC (DCDC) switching boost circuit in the example, if the steady-state operation of the switching boost circuit is to be maintained, that is, the output voltage and output current are kept stable, under the given circuit topology and component parameters of the switching boost circuit, there are many possibilities for the switching behaviors of power semiconductor devices such as field effect transistors and triodes, and there are feasible control schemes with different on and off times. Therefore, it is necessary to collect in real time and determine the power conversion efficiency of the switching boost circuit under different control schemes to be selected based on the input signal and output signal of the switching boost circuit and the circuit information of the switching boost circuit, determine the control scheme with the highest power conversion efficiency as the target control scheme, and adjust the on and off control scheme of the power semiconductor devices in the switching boost circuit in real time through the target control scheme to reduce the loss of the power semiconductor devices and achieve the optimization of the efficiency of the switching boost circuit.

[0059] The power devices in the switching boost circuit usually include inductors, diodes, and switching tubes. These power devices will cause energy loss when the switching boost circuit converts the input current and input voltage into electric energy. Therefore, the circuit loss of the switching boost circuit under each control scheme can be calculated, and the power conversion efficiency of the switching boost circuit can be obtained by combining the output voltage and output current of the switching boost circuit.

[0060] Specifically, the existing switching boost circuit usually includes an inductor, a switch tube and a rectifier diode, so the circuit loss needs to consider the inductor core loss, the inductor winding loss, the switch tube turn-on loss, the switch tube turn-off loss, the switch tube conduction loss, the rectifier diode conduction loss and the rectifier diode switching loss. Among them, the switch tube turn-on loss involved in the present application includes at least one of the following: transistor turn-on loss, field effect tube turn-on loss, or other switch tube turn-on loss; the switch tube turn-off loss includes at least one of the following: transistor turn-off loss, field effect tube turn-off loss, or other switch tube turn-off loss; the switch tube conduction loss includes at least one of the following: transistor conduction loss, field effect tube conduction loss, or other switch tube conduction loss. In a specific example, the power conversion efficiency of the boost DCDC switching boost circuit can be calculated by the following formula:

[0061] η=I 2 U 2 / (I 2 U 2 +P core +P wd +P M_on +P M_off +P M_con +P D_con +P D_sw )

[0062] Where η is the power conversion efficiency, I 2 is the output current, U 2 is the output voltage, P core is the inductor core loss, P wd is the inductor winding loss, P M_on is the switch-on loss, P M_off is the switch-off loss, P M_con is the conduction loss of the switch tube, P D_con is the conduction loss of the rectifier diode, P D_sw is the switching loss of the rectifier diode.

[0063] It should be noted that the circuit information of the switching boost circuit includes the electrical parameters of the power semiconductor device and the circuit topology that describes the connection relationship between the devices in the circuit. The output signal can be determined according to the load connected to the output end of the switching boost circuit. The current and voltage information of each power semiconductor device can be obtained by combining the input signal and the circuit topology. Then, the corresponding loss can be obtained according to the electrical parameters and current and voltage information of each power semiconductor device. Among them, the detailed calculation process of the loss of the inductor, diode and switch tube is common knowledge in the field, and those skilled in the art can calculate it according to the actual situation, which will not be repeated here.

[0064] Of course, in other embodiments, the calculation of the power conversion efficiency needs to determine the circuit loss based on the actual circuit information of the switching boost circuit, and then obtain the corresponding power conversion efficiency based on the circuit loss, output voltage and output current. Those skilled in the art can determine the specific calculation formula for the circuit loss based on the actual circuit information of the switching boost circuit, and the present application does not limit this.

[0065] In an optional embodiment, the multiple operating modes include a discontinuous mode and / or a continuous mode, and the control scheme to be selected includes a control scheme for at least one power semiconductor device corresponding to each operating mode in the discontinuous mode and / or the continuous mode of the switching boost circuit. The control scheme for at least one power semiconductor device corresponding to the continuous mode includes a continuous conduction mode control scheme. The control scheme for at least one power semiconductor device corresponding to the discontinuous mode includes an Nth valley discontinuous conduction mode control scheme, where N includes at least one positive integer greater than or equal to 1.

[0066] Specifically, it can be understood that the switch circuit can operate in different operating modes, such as discontinuous mode, continuous mode, and boundary / boundary line mode. For the switch boost circuit, it is optional to select the control scheme of discontinuous mode and continuous mode. Among them, the control scheme of continuous mode includes continuous conduction mode (Continuous Conduction Mode, CCM) control scheme, that is, the inductor current continuous control scheme. For example, Figure 7 The CCM control scheme of the boost DCDC switch boost circuit is shown. The discontinuous mode control scheme includes the Nth valley discontinuous conduction mode (DCM) control scheme, where N includes at least one positive integer greater than or equal to 1. Specifically, Figure 8 The first valley conduction DCM control scheme of the boost DCDC switch boost circuit is shown, and the resonance of the junction capacitance and input inductance of the switch tube (such as MOSFET) after DCM is realized. s When the voltage resonates to the lowest point, the MOSFET is turned on again to achieve minimal turn-on loss. Fig. 9 and Fig.10 The second and third valley conduction DCM control schemes of the boost DCDC switch boost circuit are shown. The MOSFET junction capacitance and input inductance resonate for the second and third time respectively. Similarly, when the Vs voltage of the MOSFET resonates to the lowest point, the MOSFET is turned on again.

[0067] In an optional implementation, when the power of the switching boost circuit is greater than or equal to the first preset power, the multiple control schemes to be selected include a continuous conduction mode control scheme and an Nth valley discontinuous conduction mode control scheme.

[0068] Specifically, the Nth valley intermittent conduction mode control scheme includes: the first valley intermittent conduction mode control scheme, the second valley intermittent conduction mode control scheme, the third valley intermittent conduction mode control scheme, or more than the third valley intermittent conduction mode control scheme.

[0069] It is understandable that more resonance times usually correspond to smaller loads. The reason is that when the load becomes smaller, the rise time and fall time of the inductor current decrease accordingly. If the number of resonances decreases, it means that the switching frequency is higher, and a single control scheme is not conducive to improving efficiency. For example, for Figure 5 In the three-phase AC input boost circuit shown, the real-time values ​​of the voltage and current on the input side change periodically over time. Generally, in the circuit topology of sinusoidal input voltage and input current, when the voltage phase is relatively small, the current is relatively small, and the real-time input power is relatively small, the DCM valley-opening control scheme with multiple resonances will be more often used. When the input voltage phase increases, the input voltage and current also increase accordingly, and the number of DCM resonances will decrease; when the real-time power increases, the DCM half-resonance (i.e., the first valley discontinuous conduction mode control scheme) or the CCM control scheme may be used directly to achieve the optimization of efficiency.

[0070] Therefore, in this optional embodiment, when the power of the switching boost circuit is greater than or equal to the first preset power, the power of the switching boost circuit is relatively large, and the continuous conduction mode control scheme and the Nth valley intermittent conduction mode control scheme can be considered as the control schemes to be selected.

[0071] Optionally, the first preset power may be selected to be 50% of the maximum power of the switching boost circuit. For example, in a specific example, when the maximum power of the switching boost circuit is 10 kW, the first preset power may be set to 5 kW. The current power of the switching boost circuit may be determined based on the input signal and the output signal of the switching boost circuit. If the current power of the switching boost circuit is greater than or equal to 5 kW, the control schemes that may be selected include a CCM control scheme and an Nth valley DCM control scheme.

[0072] Optionally, when the power of the switching boost circuit is greater than or equal to the first preset power, the number of resonances will decrease as the power increases. Thus, the value of N can be set to narrow the selection range of selectable control schemes, remove control schemes with low power conversion, and obtain more targeted selectable control schemes, thereby reducing the amount of calculation on the basis of ensuring the power conversion efficiency of the switching boost circuit, and improving the efficiency of real-time determination of the control scheme of the semiconductor power device. Exemplarily, when the power of the switching boost circuit is greater than or equal to the first preset power, N can be set to be less than or equal to 3 to determine a range of selectable control schemes that is more in line with the power of the current switching boost circuit. For example, in a specific example, when the maximum power of the switching boost circuit is 10kw, the first preset power can be set to 5kw, and N is 3. The current power of the switching boost circuit can be determined based on the input signal and output signal of the switching boost circuit. If the current power of the switching boost circuit is greater than 5kw, the selectable control schemes include a CCM control scheme, a first valley DCM control scheme, a second valley DCM control scheme, and a third valley DCM control scheme.

[0073] Of course, in other implementations, the first preset power and the corresponding selectable control scheme may be determined based on actual conditions such as the input signal and load of the switching boost circuit, and the present application does not limit this.

[0074] In an optional embodiment, when the power of the switching boost circuit is less than or equal to a second preset power, multiple control schemes to be selected include an Mth valley intermittent conduction mode control scheme, the second preset power is less than the first preset power, and M includes at least one positive integer greater than or equal to a preset value.

[0075] Specifically, it can be understood that when the power of the switching boost circuit is small, for example, when the input signal of the switching boost circuit is a sine wave, the real-time power of the sine wave input signal input to the switching boost circuit when it crosses the zero point is relatively small, and the DCM valley-opening control scheme with multiple resonances will be more often used. Therefore, when the power of the switching boost circuit is less than or equal to the second preset power, the power conversion efficiency of the CCM control scheme is usually not high, and the CCM control scheme is no longer considered, and only the control scheme in the discontinuous mode is considered.

[0076] Optionally, the second preset power may be selected to be 30% of the maximum power of the switching boost circuit. For example, in a specific example, when the maximum power of the switching boost circuit is 10 kW, the second preset power may be set to 3 kW. The current power of the switching boost circuit may be determined based on the input signal and the output signal of the switching boost circuit. If the current power of the switching boost circuit is less than or equal to 3 kW, the control scheme may include the Mth valley DCM control scheme.

[0077] Optionally, when the power of the switching boost circuit is less than or equal to the second preset power, the number of resonances will increase as the power decreases. Thus, a preset value can be set to narrow the selection range of selectable control schemes, remove control schemes with low power conversion, and obtain more targeted selectable control schemes, thereby reducing the amount of calculation on the basis of ensuring the power conversion efficiency of the switching boost circuit, and improving the efficiency of real-time determination of control schemes for semiconductor power devices. Exemplarily, when the power of the switching boost circuit is less than or equal to the second preset power, the preset value can be set to 3 to determine a range of selectable control schemes that is more in line with the power of the current switching boost circuit. For example, in a specific example, when the maximum power of the switching boost circuit is 10kw, the second preset power can be set to 3kw, and the preset value is 3. The current power of the switching boost circuit can be determined based on the input signal and the output signal of the switching boost circuit. If the current power of the switching boost circuit is less than or equal to 3 kW, the control scheme that can be selected includes the Mth valley DCM control scheme, where M includes at least one positive integer greater than or equal to 3, such as the 3rd valley DCM control scheme, the 4th valley DCM control scheme, the 5th valley DCM control scheme, the 6th valley DCM control scheme, etc.

[0078] Of course, in other implementations, the second preset power and the corresponding selectable control scheme may be determined based on actual conditions such as the input signal and load of the switching boost circuit, and the present application does not limit this.

[0079] In an optional embodiment, when the power of the switching boost circuit is greater than the second preset power and less than the first preset power, the multiple control schemes to be selected may include the Xth valley intermittent conduction mode control scheme. Optionally, when N is less than M, X may be set to be greater than or equal to N and less than or equal to M. For example, in a specific example, the second preset power is 30% of the maximum power of the switching boost circuit, the first preset power is 70% of the maximum power of the switching boost circuit, N includes at least one positive integer greater than or equal to 1 and less than 3, and M includes at least one positive integer greater than 4, then X can be selected from 3 and 4, that is, the multiple control schemes to be selected may include the third valley intermittent conduction mode control scheme and the fourth valley intermittent conduction mode control scheme. In other embodiments, those skilled in the art may select control schemes corresponding to different powers of the switching boost circuit according to actual conditions, and this application does not limit this.

[0080] In an optional implementation manner, S100 collecting the input signal and the output signal of the switch boost circuit specifically includes:

[0081] The input signal and the output signal of the switching boost circuit are collected every one or more preset control cycles.

[0082] Specifically, the control cycle for collecting the input and output signals of the switching boost circuit can be predetermined, and the input and output signals can be collected every other control cycle and the control scheme of the semiconductor power device can be re-determined, or the input and output signals can be collected every multiple control cycles and the control scheme of the semiconductor power device can be re-determined, so as to timely adjust the control scheme of the power semiconductor device according to the actual input signal of the switching boost circuit, so as to optimize the continuous power conversion efficiency of the entire switching boost circuit. In addition, by setting the control cycle to regularly adjust the control scheme of the power semiconductor device, the control scheme can be adjusted in a targeted manner to avoid the problem of high energy consumption caused by continuous adjustment.

[0083] Among them, the time interval of the control cycle can be less than, greater than or equal to the switching cycle of the power semiconductor device. Those skilled in the art can set the control cycle according to actual needs, and this application does not limit this.

[0084] In an optional embodiment, the method further includes a step S000 of pre-forming a correspondence between different input signals and output signals and a plurality of control schemes.

[0085] Specifically, it can be understood that, when the circuit information of the switching boost circuit is determined, for input signals and output signals of different input voltages, output voltages and output currents, the power conversion efficiency of the switching boost circuit under different power semiconductor device control schemes can be predetermined for each input signal and output signal, and then the control scheme with the highest power conversion efficiency is determined, and different input signals and output signals are respectively corresponded to the corresponding control schemes with the highest power conversion efficiency to form a corresponding relationship between different input signals and output signals and multiple control schemes. Thus, in actual application, when the input signal and output signal of the switching boost circuit are collected in real time, the control scheme corresponding to the collected input signal and output signal can be found from the above correspondence, that is, the target control scheme is obtained. In this optional embodiment, the response speed of real-time determination and adjustment of the power semiconductor device control scheme can be improved by presetting the corresponding relationship between the input signal and the output signal and the control scheme.

[0086] In one or more embodiments, the output signals of the output voltage and the output current under several typical load conditions and the input voltage can be used as two dimensions to correspond to the control scheme to form a lookup table. In practical applications, the corresponding control scheme can be directly found from the lookup table based on the collected input voltage, output voltage and output current of the switching boost circuit as the target control scheme to control the switching of the power semiconductor device.

[0087] In other embodiments, in order to determine the target control scheme under any input signal and output signal, the correspondence between the determined different input signals and output signals and multiple control schemes can be further interpolated, and then the correspondence curve between the different input signals and output signals and the control schemes can be fitted. In practical applications, the corresponding control scheme can be directly determined as the target control scheme according to the corresponding relationship curve based on the collected input voltage, output voltage and output current of the switching boost circuit, and the power semiconductor device can be switched.

[0088] In an optional embodiment, if Fig.11 As shown, S000 forms the corresponding relationship between different input signals and output signals and multiple control schemes, specifically including:

[0089] S010: Collect different input signals and output signals of the switching boost circuit.

[0090] S020: Determine the power conversion efficiency of different input signals and output signals under multiple control schemes.

[0091] S030: Associating different input signals and output signals with control schemes with the highest power conversion efficiency.

[0092] Specifically, in the process of pre-forming the corresponding relationship between different input signals and output signals and multiple control schemes, different input signals and output signals of the switching boost circuit in the experimental or historical control process can be collected to determine the electric energy conversion efficiency of different input signals and output signals under multiple control schemes, and then determine the control scheme with the highest electric energy conversion efficiency as the target control scheme, and associate different input signals and output signals with the corresponding control scheme with the highest electric energy conversion efficiency to form a corresponding relationship.

[0093] In one or more embodiments, when determining the power conversion efficiency of different input signals and output signals under multiple control schemes, the input voltage, input current, output voltage and output current of the switching boost circuit under different control schemes in the experimental or historical control process can be collected. The power conversion efficiency of the switching boost circuit is determined based on the input signal and output signal of the switching boost circuit.

[0094] In other embodiments, when determining the power conversion efficiency of different input signals and output signals under multiple control schemes, the circuit loss of different input signals and output signals under multiple control schemes may be determined first, and then the power conversion efficiency is obtained according to the circuit loss and the output current and output voltage in the input signal and the output signal. Figure 2For the Boost DCDC circuit, the circuit loss includes the inductor core loss, the inductor winding loss, the switch tube turn-on loss, the switch tube turn-off loss, the switch tube conduction loss, the rectifier diode conduction loss and the rectifier diode switching loss.

[0095] Based on the same principle, this embodiment also discloses a circuit control unit. Fig.12 As shown, in this embodiment, the circuit control unit includes a signal acquisition module 11 , a control adjustment module 12 and a switch control module 13 .

[0096] The signal acquisition module 11 is used to acquire input signals and output signals of the switching boost circuit.

[0097] The control adjustment module 12 is used to determine the control scheme with the highest power conversion efficiency as the target control scheme from multiple control schemes to be selected based on the input signal, the output signal and the circuit information of the switching boost circuit. The control schemes to be selected include the control scheme for at least one power semiconductor device corresponding to each of the multiple working modes of the switching boost circuit.

[0098] The switch control module 13 is used to control the on and off of at least one power semiconductor device according to a target control scheme.

[0099] In an optional embodiment, the control adjustment module 12 is specifically used to calculate the circuit loss of the switching boost circuit under multiple control schemes to be selected based on the input signal, output signal and circuit information of the switching boost circuit, the circuit loss includes inductor core loss, inductor winding loss, switch tube turn-on loss, switch tube turn-off loss, switch tube conduction loss, rectifier diode conduction loss and rectifier diode switching loss, determine the energy conversion efficiency of each control scheme to be selected based on the circuit loss and output signal of each control scheme to be selected, and determine the control scheme with the highest energy conversion efficiency among the multiple control schemes to be selected as the target control scheme.

[0100] In an optional embodiment, the multiple operating modes include a discontinuous mode and / or a continuous mode.

[0101] The control scheme to be selected includes a control scheme for at least one power semiconductor device corresponding to each operating mode in the discontinuous mode and / or the continuous mode of the switching boost circuit.

[0102] The control scheme for at least one power semiconductor device corresponding to the continuous mode includes a continuous conduction mode control scheme.

[0103] The control scheme for at least one power semiconductor device corresponding to the discontinuous mode includes an Nth valley discontinuous conduction mode control scheme, where N includes at least one positive integer greater than or equal to 1.

[0104] In an optional implementation, when the power of the switching boost circuit is greater than or equal to the first preset power, the multiple control schemes to be selected include a continuous conduction mode control scheme and an Nth valley discontinuous conduction mode control scheme.

[0105] In an optional embodiment, when the power of the switching boost circuit is less than or equal to a second preset power, multiple control schemes to be selected include an Mth valley intermittent conduction mode control scheme, the second preset power is less than the first preset power, and M includes at least one positive integer greater than or equal to a preset value.

[0106] In an optional implementation, the signal acquisition module 11 is specifically configured to acquire input signals and output signals of the switching boost circuit every one or more preset control cycles.

[0107] In an optional embodiment, the control adjustment module 12 is further used to pre-form a corresponding relationship between different input signals and output signals and multiple control schemes.

[0108] In an optional embodiment, the control adjustment module 12 is specifically used to collect different input signals and output signals of the switching boost circuit; determine the power conversion efficiency of different input signals and output signals under multiple control schemes; and associate different input signals and output signals with the control scheme with the highest power conversion efficiency.

[0109] Since the principle of solving the problem in this unit is similar to the above method, the implementation of this unit can refer to the implementation of the method and will not be repeated here.

[0110] Based on the same principle, this embodiment also discloses a power supply device. In this embodiment, the power supply device includes a switch boost circuit and a circuit control unit as described in this embodiment.

[0111] Since the principle of solving the problem by the device is similar to that of the above method, the implementation of the device can refer to the implementation of the method and will not be repeated here.

[0112] The systems, devices, modules or units described in the above embodiments may be implemented by computer chips or entities, or by computer program products having certain functions. A typical implementation device is a computer device, and specifically, the computer device may be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0113] In a typical example, the computer device specifically includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the program, the method executed by the client as described above is implemented; or, when the processor executes the program, the method executed by the server as described above is implemented.

[0114] Reference below Fig.13 , which shows a schematic diagram of the structure of a computer device 600 suitable for implementing an embodiment of the present application.

[0115] like Fig.13 As shown, the computer device 600 includes a central processing unit (CPU) 601, which can perform various appropriate operations and processes according to a program stored in a read-only memory (ROM) 602 or a program loaded from a storage part 608 to a random access memory (RAM) 603. In the RAM 603, various programs and data required for the operation of the system 600 are also stored. The CPU 601, the ROM 602, and the RAM 603 are connected to each other via a bus 604. An input / output (I / O) interface 605 is also connected to the bus 604.

[0116] The following components are connected to the I / O interface 605: an input section 606 including a keyboard, a mouse, etc.; an output section 607 including a cathode ray tube (CRT), a liquid crystal feedback device (LCD), etc., and a speaker, etc.; a storage section 608 including a hard disk, etc.; and a communication section 609 including a network interface card such as a LAN card, a modem, etc. The communication section 609 performs communication processing via a network such as the Internet. A drive 610 is also connected to the I / O interface 605 as needed. A removable medium 611, such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc., is installed on the drive 610 as needed, so that a computer program read therefrom is installed as needed as the storage section 608.

[0117] In particular, according to an embodiment of the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, an embodiment of the present application includes a computer program product, which includes a computer program tangibly contained on a machine-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through the communication part 609, and / or installed from a removable medium 611.

[0118] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0119] For the convenience of description, the above device is described in various units according to their functions. Of course, when implementing the present application, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0120] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0121] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0122] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process in the computer or other programmable device. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0123] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0124] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.

[0125] The present application may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present application may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communication network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0126] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0127] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A circuit control method, characterized in that: Applied to a power supply device, the power supply device includes a switching boost circuit, the switching boost circuit includes at least one power semiconductor device, and the circuit control method includes: collecting input signals and output signals of the switching boost circuit; According to the input signal, the output signal and the circuit information of the switching boost circuit, a control scheme with the highest power conversion efficiency is determined as a target control scheme from a plurality of control schemes to be selected, wherein the control scheme to be selected includes a control scheme for the at least one power semiconductor device corresponding to each of the plurality of working modes of the switching boost circuit; Controlling the on and off of the at least one power semiconductor device according to the target control scheme; the multiple operating modes include a discontinuous mode and / or a continuous mode; The control scheme to be selected includes a control scheme for the at least one power semiconductor device corresponding to each of the operating modes in the discontinuous mode and / or the continuous mode of the switching boost circuit; The control scheme for the at least one power semiconductor device corresponding to the continuous mode includes a continuous conduction mode control scheme; The control scheme for the at least one power semiconductor device corresponding to the discontinuous mode includes an Nth valley discontinuous conduction mode control scheme, where N includes at least one positive integer greater than or equal to 1; The method further comprises: Determining the current power of the switching boost circuit based on the input signal and the output signal of the switching boost circuit; When the power of the switching boost circuit is less than or equal to a second preset power, the multiple control schemes to be selected include an Mth valley discontinuous conduction mode control scheme, the second preset power is less than the first preset power, M includes at least one positive integer greater than or equal to a preset value, and M≥N; When the power of the switching boost circuit is greater than or equal to the first preset power, the multiple control schemes to be selected include a continuous conduction mode control scheme and an Nth valley discontinuous conduction mode control scheme; When the power of the switching boost circuit is greater than the second preset power and less than the first preset power, the multiple control schemes to be selected include an Xth valley discontinuous conduction mode control scheme, N≤X≤M.

2. The circuit control method according to claim 1, characterized in that: The step of determining the control scheme with the highest power conversion efficiency from a plurality of control schemes to be selected as the target control scheme according to the input signal, the output signal and the circuit information of the switch boost circuit comprises: Calculating the circuit loss of the switching boost circuit under multiple control schemes to be selected according to the input signal, output signal and circuit information of the switching boost circuit, wherein the circuit loss includes inductor core loss, inductor winding loss, switch tube turn-on loss, switch tube turn-off loss, switch tube conduction loss, rectifier diode conduction loss and rectifier diode switch loss; Determine the power conversion efficiency of each control scheme according to the circuit loss and output signal of each control scheme to be selected; A control scheme with the highest electric energy conversion efficiency among multiple control schemes to be selected is determined as a target control scheme.

3. The circuit control method according to claim 1, characterized in that: The collecting of the input signal and the output signal of the switching boost circuit comprises: The input signal and the output signal of the switching boost circuit are collected every one or more preset control cycles.

4. The circuit control method according to claim 1, characterized in that: The method comprises: pre-forming corresponding relationships between different input signals and output signals and a plurality of control schemes.

5. A circuit control unit, characterized in that: Applied to a power supply device, the power supply device comprises a switching boost circuit, the switching boost circuit comprises at least one power semiconductor device, and the circuit control unit comprises: A signal acquisition module, used for acquiring input signals and output signals of the switching boost circuit; a control adjustment module, configured to determine, according to the input signal, the output signal and the circuit information of the switching boost circuit, a control scheme with the highest power conversion efficiency from a plurality of control schemes to be selected as a target control scheme, wherein the control scheme to be selected includes a control scheme for the at least one power semiconductor device corresponding to each of the plurality of working modes of the switching boost circuit; a switch control module, configured to control the on and off of the at least one power semiconductor device according to the target control scheme; The multiple working modes include intermittent mode and / or continuous mode; The control scheme to be selected includes a control scheme for the at least one power semiconductor device corresponding to each of the operating modes in the discontinuous mode and / or the continuous mode of the switching boost circuit; The control scheme for the at least one power semiconductor device corresponding to the continuous mode includes a continuous conduction mode control scheme; The control scheme for the at least one power semiconductor device corresponding to the discontinuous mode includes an Nth valley discontinuous conduction mode control scheme, where N includes at least one positive integer greater than or equal to 1; When the power of the switching boost circuit is less than or equal to a second preset power, the multiple control schemes to be selected include an Mth valley discontinuous conduction mode control scheme, the second preset power is less than the first preset power, M includes at least one positive integer greater than or equal to a preset value, and M≥N; When the power of the switching boost circuit is greater than or equal to the first preset power, the multiple control schemes to be selected include a continuous conduction mode control scheme and an Nth valley discontinuous conduction mode control scheme; When the power of the switching boost circuit is greater than the second preset power and less than the first preset power, the multiple control schemes to be selected include the Xth valley discontinuous conduction mode control scheme, N≤X≤M; The current power of the switching boost circuit is determined based on an input signal and an output signal of the switching boost circuit.

6. A power supply device, characterized in that: The invention comprises a switching boost circuit and a circuit control unit as claimed in claim 5.

7. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the method according to any one of claims 1 to 4 is implemented.

8. A computer readable medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the method according to any one of claims 1 to 4 is implemented.

9. A computer program product, characterized in that The computer program product comprises a computer program, and when the computer program is executed by a processor, the method according to any one of claims 1 to 4 is implemented.

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