Semiconductor module having a housing

Abstract

The invention relates to a semiconductor module (2) comprising a housing (4), a first substrate (18), a second substrate (30) and at least one semiconductor component (10). In order to provide a more compact semiconductor module (2) compared to the prior art, it is proposed that at least the semiconductor component (10) and the first substrate (18) are arranged in the housing (4), wherein the semiconductor component (10) is electrically conductively connected to at least one pin (14), wherein the at least one pin (14) is in contact with the second substrate (18) and is non-detachably connected within the housing (4), and wherein the first substrate (18) is connected to the housing (4) via the at least one pin (14) in a force-fitting manner.

Description

Technical Field

[0001] The invention relates to a semiconductor module comprising a housing, at least one semiconductor component, a first substrate and a second substrate.

[0002] The invention also relates to a converter having at least one such semiconductor module.

[0003] The invention further relates to a method for producing such a semiconductor module, wherein a first substrate is connected to pins and subsequently a second substrate is connected to the same pins. Background Art

[0004] Semiconductor modules, particularly power modules, typically include semiconductor devices, particularly power semiconductors such as IGBTs (Insulated Gate Bipolar Transistors), housed in a housing and connected to a ceramic substrate. The semiconductor module also includes at least two other substrates, such as a main circuit board with an interface and a driver circuit board, which contact the ceramic substrate. Individual contacts, also called pins, are used for contacting, and are fixed in the housing or on the ceramic substrate. These contacts require structural space, thereby affecting the size of the power module.

[0005] Patent document DE 10 2017 207 382 B4 describes a semiconductor device comprising a power device, a sensor, a main electrode terminal, a sensor signal terminal, a driver terminal, and a housing with an open lower side. The sensor measures the physical state of the power device to transmit a signal based on the physical state, a main current of the power device flows through the main electrode terminal, the sensor signal terminal is connected to the sensor to receive a signal from the sensor, and the driver terminal receives driver power to drive the power device. The housing houses the power device, the sensor, the main electrode terminal, the sensor signal terminal, and the driver terminal. Both the sensor signal terminal and the driver terminal have a first terminal and a second terminal, the first and second terminals being disposed away from the inner sidewall surface of the housing. The first and second terminals are electrically connected to each other to form a dual structure. The first terminal has a length that allows a front end portion of the first terminal to protrude outward from the upper surface of the housing and input / output signals and driver power to / from the outside. The second terminal has a length that does not allow a front end portion of the second terminal to protrude outward from the upper surface of the housing.

[0006] EP 2 086 064 A1 describes a press-in contact for transmitting current and / or electrical signals, in particular a press-in pin contact, comprising a press-in section and a mounting section mechanically coupled to each other via a relief section. The relief section comprises a compensation region and a stop region, wherein the compensation region permits coupled relative movement of the press-in section and the mounting section, and the stop region blocks movement of the press-in section and the mounting section toward each other.

[0007] Publication US2018 / 0241319 A1 describes an electronic device having a first substrate, a wiring substrate (second substrate) arranged above the first substrate, and a housing, wherein the first substrate and the wiring substrate are placed in the housing and the housing has a first side and a second side.

[0008] Publication EP 1 032 042 A2 describes a converter comprising a semiconductor module containing a power unit consisting of a power semiconductor and a control unit for controlling the power semiconductor, wherein the power unit comprises power semiconductor elements each bonded to a lead frame.

[0009] The published patent application EP 1 624 531 A1 describes a press-in connector for electrically conductively connecting printed circuit boards having insertion regions spaced apart from one another, the insertion regions being designed with mutually different cross sections and diameters.

[0010] Publication CN 106 611 758A describes an integrated housing structure for a power module, which includes a housing, a first circuit substrate, a second circuit substrate, a first pin, a second pin, and a third pin, wherein the housing is provided with a cavity; the second circuit substrate is arranged opposite to the upper part of the first circuit substrate, and both circuit substrates are placed in the cavity.

[0011] Publication US Pat. No. 10,581,426 B1 describes an electronic device comprising a first semiconductor chip having a first FET, wherein the drain of the FET is connected to a switch node, the source of the FET is connected to a reference node, and the gate of the FET is connected to a first switch control node. The first chip further comprises a bipolar transistor connected as a diode, the bipolar transistor forming a temperature diode adjacent to the first FET. The temperature diode comprises a cathode connected to the reference node and an anode connected to a bias node. Summary of the Invention

[0012] The invention is based on the object of providing a semiconductor module which is more compact than the prior art.

[0013] According to the present invention, the object is achieved by a semiconductor module, which has a housing, at least one semiconductor component, a first substrate, and a second substrate, wherein at least the semiconductor component and the first substrate are arranged in the housing, wherein the semiconductor component is electrically conductively connected to at least one pin, wherein at least one pin is in contact with the second substrate and is non-detachably connected within the housing, wherein the first substrate is connected to the housing via at least one pin in a force-fitting manner, wherein the force-fitting connection is established by crimping, wherein the pin has a press-fit terminal in a first contact area, which is elastically and / or plastically deformed when forming a force-fitting connection with the first substrate, wherein the first substrate has a first recess, which at least partially surrounds the pin, wherein the first substrate has a metal coating at least in the area of ​​the first recess, so that the first substrate is electrically conductively connected to the semiconductor component, wherein the first recess with the metal coating is constructed as an open recess, which partially surrounds the pin in the first contact area.

[0014] Furthermore, according to the invention, the object is achieved by a converter having at least one such semiconductor module.

[0015] Furthermore, according to the invention, the object is achieved by a method for producing such a semiconductor module, wherein a first substrate is connected to pins by crimping, and subsequently a second substrate is connected to the same pins.

[0016] The advantages and preferred embodiments listed below with respect to the semiconductor module can be transferred to the same extent to the converter and the production method.

[0017] The present invention is based on the following considerations: In a semiconductor module (which has a housing and in which a first substrate and a second substrate are contactable), space is saved by using at least one pin for electrically conductively contacting the second substrate, and in an additional function, the first substrate is connected in a force-fitting manner in the housing via the at least one pin. A force-fitting connection of the first substrate in the housing via the at least one pin is understood to mean that the first substrate is connected in a force-fitting manner to the housing or to at least one other component via the at least one pin, the at least one other component being in a connected, particularly mechanical, state with the housing. The pin establishes an electrically conductive connection with the semiconductor component and is non-removably connected within the housing. The non-removable connection is established, for example, by casting, welding, or sintering. Due to the non-removable connection of the pin in the housing, the first substrate is non-removably connected in the housing via the pin. The force-fitting connection is established, for example, by crimping. This arrangement saves connecting means, such as screws and / or other pins, as well as space. The first and second substrates are made, for example, of glass-fiber-reinforced epoxy resin, particularly FR4, and have, for example, at least partially structured metallization on both sides, particularly surface metallization. At least the first substrate and the semiconductor components are arranged together in the housing, which further saves structural space. During assembly, the first substrate is first connected to the pins with a force fit, and then the second substrate is connected to the same pins. This manufacturing method is easy and cost-effective to implement.

[0018] The first substrate has a first recess that at least partially surrounds the pin. The recess can be a closed recess that completely surrounds the pin, or an open or split recess that partially surrounds the pin. The recess has a rounded contour or at least one corner. In addition to a force-fit connection, this recess also achieves a positive fit, resulting in a more mechanically stable connection.

[0019] Furthermore, the first substrate has a metal coating at least in the region of the first recess, so that the first substrate is electrically conductively connected to the semiconductor component. In particular, no additional work steps are required in this connection compared to soldering.

[0020] Furthermore, the first recess in the metal coating is designed as an open recess that partially surrounds the pin in the first contact region, in particular, surrounds at most half of the pin. Such a recess is particularly arranged at the edge of the first substrate or at the edge of a recess in the first substrate, where, for example, no components to be mounted, in particular SMD components, are arranged. Thus, no additional space is required for the first recess. Therefore, such an open recess is space-saving.

[0021] Particularly advantageously, the pin has an enlargement in the first contact region with the first substrate, said enlargement having an elastically and / or plastically bent region for establishing a force-locking connection. The enlargement is, for example, a thickened region, in particular a stamped region. If this region is designed to be predominantly elastically bent, the force-locking connection is reversible. This design of the first contact region allows the substrate to be easily connected to the housing.

[0022] In another embodiment, the first recess in the metal coating is formed as a hole section. Such a hole section can be produced simply and cost-effectively.

[0023] Another embodiment provides that the pins are arranged in the metal-coated first recesses, thereby forming a substantially linear pressure distribution that is sufficient for a force-fit connection, in particular a crimp connection, of the first substrate and can be produced simply and cost-effectively.

[0024] In another embodiment, the second substrate has a second recess coated with metal, through which the pin is electrically conductively connected to the second substrate in a force-fitting and / or materially bonded manner. A force-fitting connection can be established, for example, by press-fitting, and a materially bonded connection can be established, for example, by welding. Experience has shown that this type of connection has proven advantageous.

[0025] Another embodiment provides that the diameter of the second recess is smaller than the diameter of the first recess. For example, during the manufacture of a semiconductor module, a first substrate with a larger first recess is first moved past the second contact area of ​​a pin without contacting the second contact area and connected with a force fit in the area of ​​the first contact area. Subsequently, a second substrate with a smaller second recess is connected to the second contact area of ​​the same pin. Due to the different diameters, the two substrates can be connected to the same pin simply and cost-effectively.

[0026] In another configuration, the second substrate is electrically conductively connected to the semiconductor component via at least one pin. In this way, the semiconductor component can be connected to two substrates in a space-saving manner.

[0027] Another embodiment provides for the pin to be designed as an independent pin and to include a spring section. This independent pin is arranged outside a housing, for example, surrounding the ceramic substrate, and can be freely positioned on the ceramic substrate. The spring section compensates for thermal loads, particularly thermal longitudinal expansion, thereby contributing to mechanical stability.

[0028] In another embodiment, the pins are arranged to extend at least partially in the housing. For example, the pins are at least partially cast into the housing. Experience has shown that this arrangement is advantageous.

[0029] Another embodiment provides that the semiconductor module includes a sensor with at least one sensor terminal, wherein the semiconductor component includes at least one driver terminal, and wherein the at least one sensor terminal and the at least one driver terminal are electrically conductively connected via a common pin. The sensor is, for example, a temperature sensor that is thermally connected to the semiconductor component. For example, the driver terminal, in particular the emitter terminal, and the sensor terminal are connected to a common reference potential, in particular to the negative supply voltage of the semiconductor component. Alternatively, the common pin is used via a frequency reuse method, wherein the driver terminal operates in a first frequency range and the sensor terminal operates in a second frequency range. This common pin saves installation space in the semiconductor module. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The present invention will be described and explained in more detail below based on the embodiments shown in the drawings.

[0031] The accompanying drawings show:

[0032] Figure 1 a schematic cross-sectional view showing a portion of a first configuration of a semiconductor module,

[0033] Figure 2 a schematic cross-sectional view showing a portion of a second configuration of a semiconductor module,

[0034] Figure 3 shows an enlarged longitudinal section through a first configuration of the semiconductor module in a first contact region,

[0035] Figure 4 shows an enlarged cross-sectional view of a first configuration of a semiconductor module in a first contact region,

[0036] Figure 5 a schematic cross-sectional view showing a portion of a third embodiment of a semiconductor module,

[0037] Figure 6 a schematic cross-sectional view showing a portion of a fourth embodiment of a semiconductor module,

[0038] Figure 7 a schematic diagram showing a portion of a circuit of a semiconductor module, and

[0039] Figure 8 A schematic diagram of a converter with semiconductor modules is shown. DETAILED DESCRIPTION

[0040] The embodiments described below are preferred embodiments of the present invention. In the embodiments, the components described in the embodiments are each considered independently of one another as features of the present invention and can therefore also be considered as components of the present invention individually or in combinations different from those shown. Furthermore, the described embodiments can be supplemented by other features of the present invention that have already been described.

[0041] The same reference numerals have the same meaning in different figures.

[0042] Figure 1A schematic cross-sectional view shows a portion of a first embodiment of a semiconductor module 2 having a housing 4 made of plastic. The housing 4 has an open bottom side and surrounds a DCB ceramic substrate 6, which comprises, for example, aluminum oxide and / or aluminum nitride and at least partially structured metallization on both sides, which comprises, for example, copper. The housing 4 and the DCB ceramic substrate 6 rest on a metallic base plate 8 and are connected thereto, in particular, in a materially bonded manner. The base plate 8 is particularly designed as a heat sink, which comprises, for example, aluminum and / or copper, wherein the metallization of the DCB ceramic substrate 6 facing toward the base plate 8 is electrically and thermally connected to the base plate 8. On the metallization of the DCB ceramic substrate 6 facing away from the base plate 8, a semiconductor component 10 is materially connected to the metallization of the DCB ceramic substrate 6. The semiconductor component 10 is electrically conductively connected to pins 14 embedded in the housing 4 via bonding wires 12. Pin 14 has an enlarged portion in a first contact region 16, which has an elastically and / or plastically bent region, wherein first contact region 16 protrudes from housing 4. For example, pin 14 has a press-fit terminal in first contact region 16. A first substrate 18, which includes, for example, at least one driver circuit, a signal processing device, and / or a buffer circuit, is connected to the housing via pin 14 by press-fitting, wherein pin 14 is elastically and / or plastically deformed in first contact region 16. First substrate 18 has a first recess 20, into which pin 14 is partially accommodated. Furthermore, first substrate 18 has at least partially structured metallization on both sides, in particular surface metallization, and is made of glass-fiber-reinforced epoxy resin, in particular FR4. In the region of first recess 20, first substrate 18 has vertical metallization 22, which is electrically conductively connected to the surface metallization, thereby electrically conductively connecting first substrate 18 to the semiconductor device via pin 14. In particular, the metal-coated first recess 20 surrounds at most half of the pin 14 in the first contact region 16, wherein the first recess 20 is designed, for example, as a hole segment. Alternatively, the first recess 20 is milled and / or has at least one corner. On at least one opposite side of the semiconductor module 2 (not shown for reasons of clarity), the first substrate 18 is contacted via at least one further pin 14 or via the housing 4 itself to establish a force-fit connection.

[0043] Furthermore, the housing 4 has a support surface 24 substantially directly below the first contact area 16, so that the first substrate 18 rests substantially horizontally on the housing 4. Below the support surface 24, the semiconductor module 2 includes a potting compound 26 that surrounds the semiconductor device 10 and the bonding wires 12. A cover 28, for example made of plastic, is arranged on the first substrate 18, wherein the first substrate 18 can optionally be pressed onto the housing 4 via the cover 28. The pins 14 extend to the exterior of the housing 4 through the cover 28 and a second substrate 30. The second substrate 30 has at least partially structured metallization on both sides, particularly surface metallization, and is made of a glass-fiber-reinforced epoxy resin, particularly FR4. The pins 14 are accommodated in second contact areas 32, which are in a second, particularly cylindrical, recess 34 that completely surrounds the pins 14. In the region of the second recess 34, the second substrate 30 has vertical metallization 22 that is electrically conductively connected to the surface metallization. In particular, the vertical metallization 22 completely covers the cylindrical first recess 20. Alternatively, the recess 20 has an angular or other shape.

[0044] The pins 14 are electrically and mechanically connected to the metallization of the second substrate 30 via a solder connection, for example, in a material-fit manner, so that the second substrate 30 is conductively connected to the semiconductor device 10 via the pins 14. The second substrate 30, which has, for example, an interface and / or adjustment device, is fastened in the semiconductor module 2 via the connection with the pins 14. Optionally, the second substrate 30 is connected to the housing 4 via another fixing mechanism, such as a screw, which is not shown for the sake of clarity.

[0045] Figure 2 A schematic cross-sectional view shows a portion of a second embodiment of a semiconductor module 2. A first substrate 18 has a metallization, in particular a surface metallization, that is at least partially structured on both sides, and a first, in particular cylindrical, recess 20 that completely surrounds the pin 14 in the first contact region 16. In the region of the first recess 20, the first substrate 18 has a vertical metallization 22 that is electrically conductively connected to the surface metallization. In particular, the vertical metallization 22 completely covers the cylindrical first recess 20. In the first contact region 16, the pin 14 has an enlargement with an elastically and / or plastically flexing region, which is exemplarily configured as a press-fit terminal. Pressing the first substrate 18 into place causes the pin 14 to be elastically and / or plastically deformed in the first contact region 16.

[0046] The first diameter d1 of the first recess 20 is greater than the second diameter d2 of the second recess 34, so that during the production of the semiconductor module 2, the first substrate 18 having the first recess 20 is initially moved over the second contact area 32 of the pin 14 and connected with a force fit in the area of ​​the first contact region 16. The cover 28 is then inserted and the second substrate 30 is connected to the pin 14. Figure 2 Other embodiments of the semiconductor module 2 correspond to Figure 1 implementation plan in .

[0047] Figure 3 An enlarged longitudinal section through a first embodiment of a semiconductor module 2 is shown in a first contact region 16. The pins 14 are arranged in first metal-coated recesses 20 and are connected to the first substrate 18 in a force-fitting manner, thereby forming a substantially linear pressure distribution P. Optionally, the pins 14 contact the housing 4 to form a force-fitting connection. Figure 3 Other embodiments of the semiconductor module 2 correspond to Figure 1 implementation plan in .

[0048] Figure 4 An enlarged cross-sectional view of a first embodiment of the semiconductor module 2 is shown in the first contact region 16 , wherein the pins 14 have press-fit terminals which deform elastically and / or plastically when forming a force-fit connection with the first substrate 18 . Figure 4 Another embodiment of the semiconductor module 2 in corresponds to Figure 1 implementation plan in .

[0049] Figure 5 A schematic cross-sectional view shows a portion of a third embodiment of a semiconductor module 2, in which the pin 14 is designed as an independent press-fit contact having a first contact region 16 and a second contact region 32, and wherein the pin 14 has a press-fit terminal in the second contact region 32, which is connected with a force-fit connection to a second recess 34 of the second substrate 30. The independent pin 14 is arranged outside the housing 4 and can be freely positioned on the DCB ceramic substrate 6, which surrounds the DCB ceramic substrate 6. The pin 14 also has a spring section 36 and is materially connected to the metallization of the DCB ceramic substrate 6 facing away from the base plate 8, in particular by welding or sintering.

[0050] The first substrate 18 has a particularly rectangular recess 38 with an at least partially encircling vertical metallization 22. In the first contact region 16, the pin 14 has an enlargement with an elastically and / or plastically bent region, which is exemplarily configured as a press-fit terminal. The first substrate 18 has at least one first recess 20 in the recess 38, in which the vertical metallization 22 is formed and electrically conductively connected to the surface metallization. For example, the second substrate 30 can be directly connected to the DCB ceramic substrate 6 via the recess 38. The pin 14 is partially accommodated in the first recess 20 and connected thereto with a force fit, so that the first substrate 18 is electrically conductively connected to the semiconductor device via the pin 14. In particular, the metallized first recess 20 in the first contact region 16 surrounds at most half of the pin 14, wherein the first recess 20 is exemplarily configured as a hole segment. Alternatively, the first recess 20 can be milled to have at least one corner. The pin 14 is arranged in the metal-coated first recess 20 and is connected to the first substrate 18 in a force-fitting manner, so that a substantially linear pressure distribution P is formed. Figure 5 Other embodiments of the semiconductor module 2 correspond to Figure 1 implementation plan in .

[0051] Figure 6 A schematic cross-sectional view shows a portion of a fourth embodiment of a semiconductor module 2. A first substrate 18 has a metallization, in particular a surface metallization, that is at least partially structured on both sides, and a first, in particular cylindrical, recess 20 that completely surrounds the pin 14 in the first contact region 16. The pin 14 is connected to the first substrate 18 with a force-fitting connection, whereby the pin 14 deforms elastically and / or plastically in the first contact region 16. The first diameter d1 of the first recess 20 is greater than the second diameter d2 of the second recess 34, so that during the manufacture of the semiconductor module 2, the first substrate 18 with the larger first recess 20 is first moved past the second contact region 32 of the pin 14 and connected with a force-fitting connection in the region of the first contact region 16. Subsequently, the second substrate 30 with the smaller second recess 34 is connected in the second contact region 32 of the same pin 14. Figure 6 Other embodiments of the semiconductor module 2 correspond to Figure 5 implementation plan in .

[0052] Figure 7A schematic diagram shows a portion of a circuit 40 of a semiconductor module 2 having a semiconductor component 10 designed as an IGBT, which has a sensor 42. Alternatively, the sensor 42 is arranged outside the semiconductor component 10 and connected thereto. For example, the sensor 42 is designed as a temperature sensor that is thermally connected to the semiconductor component 10. The sensor has a first sensor terminal 44 and a second sensor terminal 46. The semiconductor component 10 has a first driver terminal 48 and a second driver terminal 50, wherein the second sensor terminal 46 and the second driver terminal 50 are short-circuited and connected to a supply voltage Vn, in particular a negative supply voltage, of the semiconductor component 10. A pin 14 is respectively assigned to the first sensor terminal 44 and the first driver terminal 48, wherein, for example, the pin 14 of the first driver terminal 48 is shorter than the pin 14 of the first sensor terminal 44, so that the first driver terminal 48 can be connected to the first substrate 18 and the first sensor terminal 44 can be connected to the second substrate 30. The short-circuited terminals 46, 50 are connected to a common pin 52, which has a first contact region 16 for connection to the first substrate 18 or a second contact region 32 for connection to the second substrate 30. The pins 14, 52 are connected to the common pin 52. Figure 7 In the figure, the common pin 52 (such as Figures 1 to 4 as shown) is configured as a pin 14 at least partially integrated into the housing 4, or (as shown) Figures 5 and 6 ) is constructed as an independent pin 14.

[0053] Figure 8 A schematic diagram of a converter 54 is shown having a semiconductor module 2. Depending on the architecture, the converter 54 has at least one further semiconductor module 2.

[0054] In summary, the present invention relates to a semiconductor module 2 having a housing 4, at least one semiconductor component 10, a first substrate 18, and a second substrate 30. To achieve a more compact semiconductor module 2 compared to the prior art, it is proposed that at least the semiconductor component 10 and the first substrate 18 be arranged in the housing 4, wherein the semiconductor component 10 is electrically conductively connected to at least one pin 14, wherein the at least one pin 14 is in contact with the second substrate 18 and is non-detachably connected within the housing 4, and wherein the first substrate 18 is connected to the housing 4 via the at least one pin 14 in a force-fitting manner.

Claims

1. A semiconductor module (2) comprising a housing (4), a first substrate (18), a second substrate (30) and at least one semiconductor device (10), in, At least the semiconductor device (10) and the first substrate (18) are arranged in the housing (4), The semiconductor device (10) is electrically conductively connected to at least one pin (14). wherein at least one of the pins (14) is in contact with the second substrate (30) and is irremovably connected within the housing (4); wherein the first substrate (18) is connected to the housing (4) in a force-fitting manner via at least one of the pins (14); In this case, a force-fit connection is established by crimping. The pin (14) has a press-fit terminal in the first contact area (16), and the press-fit terminal deforms elastically and / or plastically when forming a force-fit connection with the first substrate (18). The first substrate (18) has a first recess (20), which at least partially surrounds the pin (14). wherein the first substrate (18) has a metal coating (22) at least in the region of the first recess (20), so that the first substrate (18) is electrically conductively connected to the semiconductor device (10), The first recess (20) coated with metal is designed as an open recess, which partially surrounds the pin (14) in the first contact region (16).

2. The semiconductor module (2) according to claim 1, wherein The pin (14) has an enlargement in a first contact region (16) with the first substrate (18), the enlargement having an elastically and / or plastically bent region for producing a force-fit connection.

3. The semiconductor module (2) according to claim 1 or 2, wherein: The first recess (20) coated with metal is designed as an open recess which surrounds at most half of the pin (14) in the first contact region (16).

4. The semiconductor module (2) according to claim 1 or 2, wherein: The pin (14) is arranged in the first recess (20) coated with metal, thereby forming a substantially linear pressure distribution (P).

5. The semiconductor module (2) according to claim 1 or 2, wherein The first recess (20) coated with metal is designed as a hole section.

6. The semiconductor module (2) according to claim 1 or 2, wherein: The second substrate (30) has a second recess (34) coated with metal, and the pin (14) is electrically conductively connected to the second substrate (30) via the second recess in a force-fitting and / or material-fitting manner.

7. The semiconductor module (2) according to claim 6, wherein The diameter (d2) of the second recess (34) is smaller than the diameter (d1) of the first recess (20).

8. The semiconductor module (2) according to claim 6, wherein The second substrate (30) is electrically conductively connected to the semiconductor device (10) via at least one of the pins (14).

9. The semiconductor module (2) according to claim 1 or 2, wherein: The pin (14) is designed as an independent pin and has a spring section (36).

10. The semiconductor module (2) according to claim 1 or 2, wherein The pin (14) is arranged to extend at least partially in the housing (4).

11. The semiconductor module (2) according to claim 1 or 2, The semiconductor module comprises a sensor (42) having at least one sensor terminal (44, 46), in, The semiconductor device includes at least one driver terminal (48, 50) and At least one sensor connection (44, 46) and at least one driver connection (48, 50) are electrically conductively connected via a common pin (52).

12. A converter (54) comprising at least one semiconductor module (2) according to any one of the preceding claims.

13. A method for producing a semiconductor module (2) according to any one of claims 1 to 11, wherein: The first substrate (18) is connected to the pins (14) by crimping, and the second substrate (30) is subsequently connected to the same pins (14).

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