A power MOSFET module and production method

Abstract

The present invention discloses a power MOSFET module and a production method, and relates to the field of semiconductor technology. It includes a DBC board, on which a plurality of copper substrates are arranged, and on which wafers are arranged; the DBC board, the copper substrate and the wafer are all embedded in a plastic package. The present invention fixes the wafer in the groove of the copper substrate and then welds and fixes it with the DBC board, so that the power MOSFET module can be produced with lower-cost equipment during production, and the copper substrate can be used as an additional supplementary heat capacity, which effectively enhances the thermal shock resistance of the power MOSFET module, making the applicability of the power MOSFET module wider. The present invention fixes the wafer on the copper substrate and then tests and divides the BIN, so that the expensive wafer tester is replaced with a cheaper ordinary chip sorting machine, which can effectively save production costs; at the same time, after the wafer is fixed on the copper substrate, the SMT equipment used for MOS single tube production can be used.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a power MOSFET module and a production method thereof. Background Art

[0002] Power MOSFET modules are used in almost all electronic manufacturing industries, including notebooks, PCs, servers, monitors and various peripherals in the computer field; mobile phones, telephones and other various terminals and local equipment in the network communication field; traditional black and white appliances and various digital products in the consumer electronics field; industrial PCs, various instruments and various control equipment in the industrial control category, etc.

[0003] During the production and manufacturing of existing power MOSFET modules, due to the fragile nature of the wafer itself, it is impossible to package it with tape, that is, it is impossible to use a placement machine with tape feeding for placement. A special die bonding machine is required for the placement operation. The die bonding machine directly sticks the wafer to the DBC board brushed with solder paste, and then performs vacuum reflow soldering to fix it. Then, the power MOSFET module is produced by plastic sealing, cutting ribs, testing and packaging. On the one hand, the power MOSFET module produced by this method has a small thermal capacity because the wafer is directly sintered on the DBC board. The copper layer of the DBC board is generally 0.3mm, and the copper layer is thin. When this power MOSFET module is used in motor drive, it has weak resistance to thermal shock and is prone to damage. On the other hand, when the existing technology performs BIN testing on the power MOSFET module, it needs to be performed before the die bonding machine sticks the wafer to the DBC board, and an expensive wafer testing machine needs to be used for testing, which puts great pressure on the production and operation costs of the enterprise. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, the present invention provides a power MOSFET module with good thermal shock resistance.

[0005] In order to achieve the above-mentioned object of the invention, the technical solution adopted by the present invention is:

[0006] Provided is a power MOSFET module, comprising a DBC board, on which a plurality of copper substrates are arranged, on which wafers are arranged; the DBC board, the copper substrates and the wafers are all embedded in a plastic package.

[0007] Furthermore, a groove is provided on the copper substrate, and the wafer is soldered to the bottom of the groove by solder paste, and the wafer does not protrude from the surface of the copper substrate.

[0008] The wafer is welded in the groove to be embedded in the copper substrate, and the surface of the wafer that does not protrude from the copper substrate enables the wafer and the copper substrate to be taped and the wafer will not be scratched during the taping.

[0009] Furthermore, the wafer is located at the exact center of the groove, and a uniform gap is provided between the wafer and the groove.

[0010] In view of the above-mentioned deficiencies in the prior art, the present invention provides a method for producing a power MOSFET module with lower production cost.

[0011] In order to achieve the above-mentioned object of the invention, the technical solution adopted by the present invention is:

[0012] A method for producing a power MOSFET module comprises the following steps:

[0013] S1: Place the copper substrate in the carrier and put it into the placement machine;

[0014] S2: Fixing the wafer on the copper substrate by DB heat machine to obtain chip material;

[0015] S3: Packing the chip material into a tape to obtain a material tape;

[0016] S4: Use a chip mounter to attach the chip material on the material belt to the DBC board with solder paste applied;

[0017] S5: Use vacuum reflow soldering to solder the chip material onto the DBC board;

[0018] S6: Use a wire bonding machine to electrically connect the chip material to obtain a power MOSFET module chip;

[0019] S7: The power MOSFET module chip is sequentially plastic-sealed, rib-cut, tested and packaged to obtain a power MOSFET module.

[0020] Furthermore, there are steps between step S2 and step S3:

[0021] S2.5: Use a chip sorter to test and sort the chip materials into BINs, and sort the chip materials with the same BIN into the same material belt.

[0022] The beneficial effects of the present invention are:

[0023] 1. The present invention fixes the wafer in the groove of the copper substrate and then welds it to the DBC board, so that the power MOSFET module can be produced using lower-cost equipment during production. In addition, the copper substrate can be used as an additional thermal capacity to effectively enhance the thermal shock resistance of the power MOSFET module, making the power MOSFET module more widely applicable.

[0024] 2. The present invention fixes the wafer on a copper substrate and then tests and sorts the BINs, so that the expensive wafer testing machine is replaced by a cheaper ordinary chip sorting machine, which can effectively save production costs. At the same time, after the wafer is fixed on the copper substrate, the SMT equipment used for the production of MOS single tubes can be used. Compared with the unique crystal bonding machine, the placement machine and SMT equipment have the advantages of lower cost and wider purchase channels. In addition, the power MOSFET module can use the same production line as the MOS single tube, and the factory can flexibly accept orders for production, thereby reducing the factory's operating costs. At the same time, when the factory wants to transform, the cost of the factory's production transformation is reduced, so that the factory can transform more quickly from the production of MOS tube parts to the production of power MOSFET module finished products, thereby avoiding foreign equipment and technology blockades. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of the three-dimensional structure of the chip material;

[0026] Figure 2 This is a schematic diagram of the center cross section of the chip material;

[0027] Figure 3 The figure is a schematic diagram of the process of producing the power MOSFET module.

[0028] Among them, 1. Copper substrate; 2. Wafer; 3. Groove; 4. Solder layer. DETAILED DESCRIPTION

[0029] The specific implementation modes of the present invention are described below so that those skilled in the art can understand the present invention. However, it should be clear that the present invention is not limited to the scope of the specific implementation modes. For those of ordinary skill in the art, as long as various changes are within the spirit and scope of the present invention as defined and determined by the attached claims, these changes are obvious, and all inventions and creations utilizing the concept of the present invention are protected.

[0030] like Figure 1-2 As shown, a power MOSFET module includes a DBC board, on which a plurality of copper substrates 1 are arranged, and on which a wafer 2 is arranged; the DBC board, the copper substrates 1 and the wafer 2 are all embedded in a plastic package. A groove 3 is arranged on the copper substrate 1, and the wafer 2 is soldered to the bottom of the groove 3 by solder paste, and the wafer 2 does not protrude from the surface of the copper substrate 1. The wafer 2 is located in the exact center of the groove 3, and a uniform gap is arranged between the wafer 2 and the groove 3.

[0031] like Figure 3 As shown, a method for producing a power MOSFET module comprises the following steps:

[0032] S1: Place the copper substrate 1 in a carrier and put it into a placement machine;

[0033] S2: Fixing the wafer 2 on the copper substrate 1 by a DB heat machine to obtain a chip material;

[0034] The DB heat machine uses the ASM SD832 model. The DB heat machine, also known as the Die Bond heat machine, is a commonly used device in semiconductor packaging factories. Compared with the die bonding machine, the equipment cost and maintenance cost are lower.

[0035] S2.5: Use a chip sorter to test and sort the chip materials into BINs, and sort the chip materials with the same BIN into the same material belt.

[0036] S3: Packing the chip material into a tape to obtain a material tape;

[0037] S4: Use a chip mounter to attach the chip material on the material belt to the DBC board with solder paste applied;

[0038] S5: Use vacuum reflow soldering to solder the chip material onto the DBC board;

[0039] S6: Use a wire bonding machine to electrically connect the chip material to obtain a power MOSFET module chip;

[0040] S7: The power MOSFET module chip is sequentially plastic-sealed, rib-cut, tested and packaged to obtain a power MOSFET module.

Claims

1. A power MOSFET module, characterized in that: It comprises a DBC board, on which a plurality of copper substrates (1) are arranged, and on which wafers (2) are arranged; the DBC board, the copper substrates (1) and the wafers (2) are all embedded in a plastic package; The copper substrate (1) is provided with a groove (3), the wafer (2) is soldered to the bottom of the groove (3) by means of solder paste, and the wafer (2) does not protrude from the surface of the copper substrate (1).

2. The power MOSFET module according to claim 1, characterized in that: The wafer (2) is located at the exact center of the groove (3), and a uniform gap is provided between the wafer (2) and the groove (3).

3. A method for producing a power MOSFET module according to claim 1 or 2, characterized in that: The steps include: S1: placing the copper substrate in a carrier and then placing it in a placement machine; S2: Fixing the wafer on the copper substrate by DB heat machine to obtain chip material; S3: Packing the chip material into a tape to obtain a material tape; S4: Use a chip mounter to attach the chip material on the material belt to the DBC board with solder paste applied; S5: Use vacuum reflow soldering to solder the chip material onto the DBC board; S6: Use a wire bonding machine to electrically connect the chip material to obtain a power MOSFET module chip; S7: The power MOSFET module chip is sequentially plastic-sealed, rib-cut, tested and packaged to obtain a power MOSFET module.

4. The method for producing a power MOSFET module according to claim 3, characterized in that: There are steps between step S2 and step S3: S2.5: Use a chip sorter to test and sort the chip materials into BINs, and sort the chip materials with the same BIN into the same material belt.

Images