A process for fabricating ceramic packaging butterfly shells for semiconductor lasers

Abstract

This application discloses a process for fabricating a ceramic packaged butterfly shell for semiconductor lasers, including the preparation of a multilayer ceramic metallization layer, sealing the metal parts and the multilayer ceramic metallization layer, and assembling the ceramic packaged butterfly shell. The process further includes the following steps: S1, washing the assembled ceramic packaged butterfly shell with water, then acid-washing, and finally rinsing with deionized water and drying; S2, nickel-plating the ceramic packaged butterfly shell after cleaning in step S1; S3, cleaning the nickel-plated ceramic packaged butterfly shell after nickel plating in step S2 with a cleaning solution under boiling conditions, then rinsing with deionized water and drying; S4, gold-plating the nickel-plated ceramic packaged butterfly shell after cleaning in step S3, then rinsing with deionized water and drying, thus obtaining a ceramic packaged butterfly shell for semiconductor lasers. This application features a simple process, high yield rates for nickel and gold plating, good shell quality, and relatively low overall process cost.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, and in particular to a process for fabricating a ceramic packaging butterfly shell for use in semiconductor lasers, which is an optical polarization material. Background Technology

[0002] Semiconductor lasers, also known as laser diodes, are lasers that use semiconductor materials as their active medium. Semiconductor lasers have high packaging requirements, therefore, ceramic-encapsulated butterfly shells are commonly used. A ceramic-encapsulated butterfly shell is a butterfly-shaped shell formed by hermetically sealing multiple layers of ceramic metallized components and leads. Due to the use of side-facing leads, the lead length from the die to the pin is short, and the flat pins can be incorporated into the printed circuit board of the peripheral circuit as part of the lead. Therefore, this structure has low lead inductance and low stray capacitance.

[0003] Currently, the most widely used ceramic housings in the domestic market are glass-encapsulated butterfly housings or 14-pin butterfly housings. These housings have fewer pins, and the ceramic metallization of the pins is relatively sparse, making assembly and soldering easier, and the frequency requirements are lower. However, some high-power semiconductor lasers, such as... Figure 1 As shown, a 26-pin butterfly-shaped housing will be used.

[0004] Although the 26-pin butterfly shell only increases the number of pins compared to the 14-pin butterfly shell, the resulting structural changes are significant. The existing 26-pin butterfly shell has a densely packed ceramic metallized portion, making brazing difficult. Furthermore, limited by the parameter requirements of the semiconductor laser it is designed for, the lead portion of the shell must withstand a 2GHz bandwidth, thus significantly increasing the overall manufacturing difficulty compared to glass-encapsulated shells and 14-pin butterfly shells. Due to the dense pin distribution, the fabrication and assembly of the ceramic and lead frame fixtures are complex, requiring higher brazing temperatures. Additionally, the dense pin distribution makes it highly susceptible to gold bridging during the final nickel and gold plating processes, leading to short circuits in the final shell. Therefore, the current manufacturing process for 26-pin butterfly shells suffers from low yield, inconsistent product quality, and high production costs. Summary of the Invention

[0005] In order to solve at least one of the above-mentioned technical problems, and to develop a manufacturing process for a 26-pin butterfly shell that is simple in process, produces products with better quality, has a higher yield, and has a relatively low manufacturing cost, so as to meet the production needs of high-end semiconductor lasers in the market, this application provides a manufacturing process for a ceramic packaging butterfly shell for semiconductor lasers.

[0006] This application provides a process for fabricating a ceramic packaging butterfly shell for semiconductor lasers, comprising fabricating a multilayer ceramic metallization layer, sealing the metal parts and the multilayer ceramic metallization layer, and assembling the ceramic packaging butterfly shell. The process further includes the following steps:

[0007] S1. Wash the assembled ceramic encapsulated butterfly tube shell with water, then acid wash it, and finally rinse it with deionized water and dry it.

[0008] S2. Nickel plating treatment of the ceramic encapsulated butterfly tube shell after cleaning in step S1.

[0009] S3. Clean the ceramic encapsulated butterfly tube shell after nickel plating in step S2 with a cleaning solution containing potassium ferricyanide while boiling, then clean it with deionized water and dry it.

[0010] S4. After cleaning in step S3, the nickel-plated ceramic packaging butterfly shell is gold-plated, then cleaned with deionized water and dried to obtain a ceramic packaging butterfly shell for use in semiconductor lasers.

[0011] By adopting the above technical solution, this application performs acid pickling and water washing on the assembled butterfly tube shell before nickel plating, which fully removes residual impurities and fine particles from the ceramic metallized part, and thoroughly removes oil and dirt, greatly improving the quality of nickel plating. After nickel plating, this application performs boiling cleaning with chemical solution, which can fully remove excess plating layer, excess conductive material in ceramic and excess electroplating solution, providing a good foundation for subsequent gold plating treatment, effectively preventing gold bonding, effectively improving product quality and greatly increasing product yield.

[0012] Optionally, in step S1, the pickling uses hydrochloric acid with a concentration of 30-40%.

[0013] Optionally, the pickling time is controlled to be 1-3 minutes.

[0014] By adopting the above technical solution, using high-concentration hydrochloric acid, and controlling the pickling time, impurities, residual solder particles, metal debris, etc. can be effectively removed, while ensuring that the ceramic metallization layer is not damaged, thus further improving the quality of the product. At the same time, hydrochloric acid is easy to volatilize and easy to clean, which can effectively ensure that it does not leave residue on the product surface.

[0015] Optionally, in step S2, the nickel plating process employs a pre-nickel plating method.

[0016] Further optionally, in step S2, the nickel plating thickness is controlled to be 3~4μm.

[0017] By adopting the above technical solution, using a pre-plating nickel process, and controlling the plating thickness, it is possible to effectively seal the connection while ensuring that the nickel plating layer and the metallization layer are tightly bonded.

[0018] Optionally, in step S3, the cleaning solution includes potassium ferricyanide, sodium hydroxide, and anhydrous sodium carbonate.

[0019] Further optionally, in the cleaning solution, the concentration of potassium ferricyanide is 0.1~0.15 mol / L, and the mass percentage concentration of anhydrous sodium carbonate is 10~15%.

[0020] Further optionally, in step S3, the cleaning time in the boiling state of the cleaning solution is controlled to be 5-7 minutes.

[0021] By adopting the above technical solution and using specific cleaning solutions, excess electroplating solution, oil stains, metal shavings and other impurities can be effectively removed, and excess conductive substances in ceramics can be effectively removed. This ensures that no gold bridging occurs during gold plating, greatly improves the precision of gold plating, and effectively improves product quality and yield.

[0022] Optionally, in step S3, the deionized water cleaning is performed using ultrasonic cleaning with deionized water as the cleaning medium.

[0023] By adopting the above technical solution and using ultrasonic cleaning, conductive particles trapped in ceramics can be effectively removed by ultrasonic means, thereby further improving the cleaning quality.

[0024] Optionally, in step S4, the gold plating process employs a pre-plating method.

[0025] Optionally, in step S4, the gold plating thickness is controlled to be 1.3~1.8μm.

[0026] By adopting the above technical solution, using a pre-plating gold process, and controlling the plating thickness, it is possible to ensure that the gold plating layer can be tightly bonded to the nickel layer while effectively sealing, thus preventing it from peeling off.

[0027] In summary, the present invention has at least one of the following beneficial technical effects:

[0028] 1. This application, by designing a special cleaning pretreatment step before nickel and gold plating, effectively cleans impurities and oil stains from the product surface, significantly reducing the difficulty of nickel and gold plating, effectively improving the quality of nickel and gold plating, and thus effectively improving product quality.

[0029] 2. This application uses nickel plating followed by gold plating, and through pretreatment before gold plating, excess conductive substances in the ceramic are effectively removed, thereby significantly reducing the possibility of gold bridging during gold plating, greatly reducing the difficulty of the gold plating process, and effectively improving the product yield.

[0030] 3. The overall process of this application is simple and relatively easy, suitable for large-scale mass production, with high overall efficiency, and can significantly reduce the manufacturing cost of 26-pin butterfly shells. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of an existing 26-pin ceramic packaged butterfly shell for semiconductor lasers;

[0032] Figure 2 This is the process flow diagram of this application. Detailed Implementation

[0033] The present application will be further described in detail below with reference to the embodiments.

[0034] like Figure 2 As shown, this application discloses a process for fabricating a ceramic packaging butterfly shell for semiconductor lasers, including fabricating a multilayer ceramic metallization layer, sealing the metal parts and the multilayer ceramic metallization layer, and assembling the ceramic packaging butterfly shell. The process also includes the following steps:

[0035] S1. Wash the assembled ceramic encapsulated butterfly tube shell with water, then acid wash it, and finally rinse it with deionized water and dry it.

[0036] S2. Nickel plating treatment of the ceramic encapsulated butterfly tube shell after cleaning in step S1.

[0037] S3. Clean the ceramic encapsulated butterfly tube shell after nickel plating in step S2 with a cleaning solution containing potassium ferricyanide while boiling, then clean it with deionized water and dry it.

[0038] S4. After cleaning in step S3, the nickel-plated ceramic packaging butterfly shell is gold-plated, then cleaned with deionized water and dried to obtain a ceramic packaging butterfly shell for use in semiconductor lasers.

[0039] Current 26-pin ceramic-encapsulated butterfly shells are primarily used in high-power semiconductor lasers, and their fabrication employs a ceramic metallization process. The ceramic metallization process for current 26-pin ceramic-encapsulated butterfly shells involves first fabricating multiple layers of ceramic metallization, using ceramic wafers as the base unit, printing metal circuitry, stacking the wafers, hot-pressing them, and finally sintering them. Then, the multiple layers of ceramic metallization and metal components are welded together, and finally assembled with other components of the butterfly shell to complete the pre-assembly of the ceramic-encapsulated butterfly shell. This application uses the same pre-assembly method as existing processes to manufacture the ceramic-encapsulated butterfly shell assembly; the improvement lies in the subsequent gold plating process.

[0040] Prior to this application, the 26-pin ceramic package butterfly shell used in semiconductor lasers employed a similar fabrication process to the 14-pin ceramic package butterfly shell, using direct gold plating. However, due to the dense pin density of the 26-pin shell and the highly dense internal metal wiring, the gold plating process was prone to gold bonding, resulting in an extremely high short-circuit rate, extremely low product yield, and poor product quality.

[0041] The inventors of this application conducted in-depth research on the product problem and ultimately discovered that the cause of the above problem lies in the excess conductive material residue in the ceramic metallization part. This conductive material includes solder particles, metal shavings, graphite, etc. The presence of the above conductive material causes gold to be plated in the area where the conductive material exists during gold plating, which in turn causes gold bonding between the dense metal wiring.

[0042] To address the aforementioned problems, the inventors designed the technical solution of this application. Through pretreatment, followed by nickel plating, and then another pretreatment, the parts to be gold-plated are covered with a nickel layer, and no conductive material remains on the ceramic parts between the metal wiring. In this way, during gold plating, the gold is completely plated onto the nickel layer, effectively preventing gold bonding.

[0043] As a preferred embodiment of this application, optionally, in step S1, the pickling is performed using hydrochloric acid with a concentration of 30-40%.

[0044] Optionally, the pickling time is controlled to be 1-3 minutes.

[0045] As another preferred embodiment of this application, optionally, in step S3, the cleaning solution includes potassium ferricyanide, sodium hydroxide, and anhydrous sodium carbonate.

[0046] Further optionally, in the cleaning solution, the concentration of potassium ferricyanide is 0.1~0.15 mol / L, and the mass percentage concentration of anhydrous sodium carbonate is 10~15%.

[0047] Further optionally, in step S3, the cleaning time in the boiling state of the cleaning solution is controlled to be 5-7 minutes.

[0048] The above-mentioned preferred solution can effectively ensure the cleaning effect on residual conductive substances in the product, thereby further improving the quality of the product prepared by the present application.

[0049] The following are embodiments of this application. All of the embodiments use existing processes to prepare pre-assembled ceramic-encapsulated butterfly shell assemblies.

[0050] Example 1

[0051] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse it with 15% hydrochloric acid for 5 minutes, and finally rinse it with deionized water and dry it with hot air.

[0052] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating by chemical nickel plating, with a plating thickness of 4~5μm.

[0053] S3. The ceramic encapsulated butterfly tube assembly after nickel plating in step S2 is cleaned with a cleaning solution under boiling conditions for 8 minutes, then rinsed with deionized water and dried with hot air. The cleaning solution used is a 0.15 mol / L potassium ferricyanide solution.

[0054] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then electrolessly gold-plated, with a plating thickness of 1~2μm.

[0055] S5. The gold-plated ceramic encapsulation butterfly shell assembly from step S4 is washed with deionized water at 60~65℃ and dried with hot air to obtain the ceramic encapsulation butterfly shell used in semiconductor lasers in this embodiment.

[0056] Example 2

[0057] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse it with 30% hydrochloric acid for 3 minutes, and finally rinse it with deionized water and dry it with hot air.

[0058] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating using a pre-nickel plating process, with a plating thickness of 3~4μm.

[0059] S3. The ceramic encapsulated butterfly tube assembly after nickel plating in step S2 is cleaned with a cleaning solution under boiling conditions for 5 minutes, then rinsed with deionized water and dried with hot air. The cleaning solution used is a 0.10 mol / L potassium ferricyanide solution with 10% anhydrous sodium carbonate added.

[0060] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then pre-plated with gold using a gold plating process, with a plating thickness of 1~2μm.

[0061] S5. The gold-plated ceramic encapsulation butterfly shell assembly from step S4 is washed with deionized water at 60~65℃ and dried with hot air to obtain the ceramic encapsulation butterfly shell used in semiconductor lasers in this embodiment.

[0062] Example 3

[0063] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse it with 35% hydrochloric acid for 1.5 minutes, and finally rinse it with deionized water and dry it with hot air.

[0064] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating using a pre-nickel plating process, with a plating thickness of 3~3.5μm.

[0065] S3. The ceramic encapsulated butterfly tube assembly after nickel plating in step S2 is cleaned with a cleaning solution under boiling conditions for 6 minutes, then rinsed with deionized water and dried with hot air. The cleaning solution is a 0.12 mol / L potassium ferricyanide solution with 15% anhydrous sodium carbonate and 10% sodium hydroxide added.

[0066] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then gold-plated using a pre-gold plating process, with a plating thickness of 1~1.5μm.

[0067] S5. The gold-plated ceramic encapsulated butterfly shell assembly from step S4 is washed with deionized water and dried with hot air to obtain the ceramic encapsulated butterfly shell for semiconductor lasers in this embodiment.

[0068] Example 4

[0069] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse it with 40% hydrochloric acid for 1 minute, and finally rinse it with deionized water and dry it with hot air.

[0070] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating using a pre-nickel plating process, with a plating thickness of 3.5~4μm.

[0071] S3. The ceramic encapsulated butterfly tube assembly after nickel plating in step S2 is cleaned with a cleaning solution under boiling conditions for 7 minutes, then rinsed with deionized water and dried with hot air. The cleaning solution is a 0.14 mol / L potassium ferricyanide solution with 12% anhydrous sodium carbonate and 15% sodium hydroxide added.

[0072] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then gold-plated using a pre-gold plating process, with a plating thickness of 1~1.5μm.

[0073] S5. The gold-plated ceramic encapsulated butterfly shell assembly from step S4 is washed with deionized water and dried with hot air to obtain the ceramic encapsulated butterfly shell for semiconductor lasers in this embodiment.

[0074] Example 5

[0075] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse it with 45% hydrochloric acid for 1 minute, and finally rinse it with deionized water and dry it with hot air.

[0076] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating by chemical nickel plating, with a plating thickness of 3.5~4μm.

[0077] S3. The ceramic encapsulated butterfly tube assembly after nickel plating in step S2 is cleaned with a cleaning solution under boiling conditions for 6 minutes, then rinsed with deionized water and dried with hot air. The cleaning solution is a 0.13 mol / L potassium ferricyanide solution with 14% anhydrous sodium carbonate and 20% sodium hydroxide added.

[0078] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then gold-plated using a pre-gold plating process, with a plating thickness of 1~1.5μm.

[0079] S5. The gold-plated ceramic encapsulated butterfly shell assembly from step S4 is washed with deionized water and dried with hot air to obtain the ceramic encapsulated butterfly shell for semiconductor lasers in this embodiment.

[0080] Example 6

[0081] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse it with 35% hydrochloric acid for 2 minutes, and finally rinse it with deionized water and dry it with hot air.

[0082] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating by chemical nickel plating, with a plating thickness of 2~2.5μm.

[0083] S3. The ceramic encapsulated butterfly tube assembly after nickel plating in step S2 is cleaned with a cleaning solution under boiling conditions for 5 minutes, then rinsed with deionized water and dried with hot air. The cleaning solution is a 0.13 mol / L potassium ferricyanide solution with 13% anhydrous sodium carbonate and 15% sodium hydroxide added.

[0084] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then electrolessly gold-plated, with a plating thickness of 0.5~1μm.

[0085] S5. The gold-plated ceramic encapsulated butterfly shell assembly from step S4 is washed with deionized water and dried with hot air to obtain the ceramic encapsulated butterfly shell for semiconductor lasers in this embodiment.

[0086] Using the preparation methods of Examples 1 to 6, 50 ceramic encapsulated butterfly packages were prepared, and 10 were randomly sampled for relevant tests to determine the product quality. The specific results are shown in Table 1. Taking the existing process similar to the preparation process of the 14-pin ceramic encapsulated butterfly package as a comparative example, 50 ceramic encapsulated butterfly packages were also prepared.

[0087] Testing methods:

[0088] 1) Air tightness test

[0089] Use an ASM142 multi-functional helium mass spectrometer leak detector to detect air tightness. Taking 1×10 -9 Pa•m 3 / s as the standard, not higher than the above standard is considered qualified.

[0090] 2) Lead wire tensile test

[0091] Arbitrarily select 6 lead wires from each package, including edge lead wires and middle lead wires, and use a tensile tester for tensile testing. The tensile force is set to 6.5 N. After the tensile test, observe whether the lead wires have no damage, detachment, looseness, metallization peeling, etc. If there are no above phenomena, it is considered qualified.

[0092] 3) Insulation resistance

[0093] Use a digital high-resistance meter to adjust the test voltage to 500 V, and detect the insulation resistance between any two lead wires. Taking 1×10 9 Ω as the standard, all higher than the standard is considered qualified.

[0094] Detect all the ceramic encapsulated butterfly packages with the above testing methods, and calculate the qualification rate of each process.

[0095] Table 1 Specific preparation parameter table of Examples 1 to 6

[0096] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Comparative Example airtightness qualified qualified qualified qualified qualified 3 unqualified 2 unqualified Lead pull 1 non-compliant qualified qualified qualified qualified 1 non-compliant 2 unqualified Insulation performance 3 unqualified 1 non-compliant qualified qualified qualified qualified 6 unqualified pass rate 58% 68% 84% 82% 84% 72% 36%

[0097] From the data in Table 1, it can be seen that for the ceramic encapsulated butterfly packages prepared by the process of this application, after the plating thickness reaches a certain thickness, the air tightness is excellent. By comparing Examples 1 and 6 with other examples in the data of Table 1, it can be seen that after adopting the pre-plating process, the qualification rate of the lead wire tensile force is better than that of the chemical method. And from the qualification rate data, it can be seen that the qualification rate of the ceramic encapsulated butterfly packages prepared by the process of this application is greatly improved compared with the existing process, especially in terms of insulation performance, the improvement is very obvious. After strictly detecting the unqualified products in Table 1, for the ceramic encapsulated butterfly packages prepared by the process of this application, except for 9 products in the process of Example 1 having short circuits between connected gold, the rest of the products have no short circuit problems. The lowest value of the resistance detection of the unqualified products is 3.7×10 7Ω; however, among the ceramic-encapsulated butterfly tubes manufactured using existing processes, 27 products had short circuits due to gold bonding, with a short circuit rate as high as 54%.

[0098] The inventors have made some optimizations to the process, and Examples 7-12 below are the optimized examples. Pickling uses 40% hydrochloric acid; the cleaning solution is prepared using potassium ferricyanide, anhydrous sodium carbonate, and sodium hydroxide, with a potassium ferricyanide concentration of 0.12 mol / L, anhydrous sodium carbonate concentration of 10%, and sodium hydroxide concentration of 15%.

[0099] Example 7

[0100] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse with hydrochloric acid for 1 minute, and finally rinse with deionized water and dry with hot air.

[0101] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating using a pre-nickel plating process, with a plating thickness of 3.2~3.8μm.

[0102] S3. Clean the ceramic encapsulated butterfly tube assembly after nickel plating in step S2 with a cleaning solution under boiling conditions for 4 minutes, then rinse with deionized water and dry with hot air.

[0103] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then pre-plated with gold using a gold plating process, with a plating thickness of 1.2~1.8μm.

[0104] S5. The gold-plated ceramic encapsulated butterfly shell assembly from step S4 is washed with deionized water and dried with hot air to obtain the ceramic encapsulated butterfly shell for semiconductor lasers in this embodiment.

[0105] Example 8

[0106] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse with hydrochloric acid for 2 minutes, and finally rinse with deionized water and dry with hot air.

[0107] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating using a pre-nickel plating process, with a plating thickness of 3.2~3.8μm.

[0108] S3. Clean the ceramic encapsulated butterfly tube assembly after nickel plating in step S2 with a cleaning solution under boiling conditions for 5 minutes, then rinse with deionized water and dry with hot air.

[0109] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then pre-plated with gold using a gold plating process, with a plating thickness of 1.2~1.8μm.

[0110] S5. The gold-plated ceramic encapsulated butterfly shell assembly from step S4 is washed with deionized water and dried with hot air to obtain the ceramic encapsulated butterfly shell for semiconductor lasers in this embodiment.

[0111] Example 9

[0112] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse with hydrochloric acid for 3 minutes, and finally rinse with deionized water and dry with hot air.

[0113] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating using a pre-nickel plating process, with a plating thickness of 3.2~3.8μm.

[0114] S3. Clean the ceramic encapsulated butterfly tube assembly after nickel plating in step S2 with a cleaning solution under boiling conditions for 6 minutes, then rinse with deionized water and dry with hot air.

[0115] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then pre-plated with gold using a gold plating process, with a plating thickness of 1.2~1.8μm.

[0116] S5. The gold-plated ceramic encapsulated butterfly shell assembly from step S4 is washed with deionized water and dried with hot air to obtain the ceramic encapsulated butterfly shell for semiconductor lasers in this embodiment.

[0117] Example 10

[0118] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse with hydrochloric acid for 4 minutes, and finally rinse with deionized water and dry with hot air.

[0119] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating using a pre-nickel plating process, with a plating thickness of 3.2~3.8μm.

[0120] S3. Clean the ceramic encapsulated butterfly tube assembly after nickel plating in step S2 with a cleaning solution under boiling conditions for 7 minutes, then rinse with deionized water and dry with hot air.

[0121] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then pre-plated with gold using a gold plating process, with a plating thickness of 1.2~1.8μm.

[0122] S5. The gold-plated ceramic encapsulated butterfly shell assembly from step S4 is washed with deionized water and dried with hot air to obtain the ceramic encapsulated butterfly shell for semiconductor lasers in this embodiment.

[0123] Example 11

[0124] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse with hydrochloric acid for 2.5 minutes, and finally rinse with deionized water and dry with hot air.

[0125] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating using a pre-nickel plating process, with a plating thickness of 3.2~3.8μm.

[0126] S3. Clean the ceramic encapsulated butterfly tube assembly after nickel plating in step S2 with a cleaning solution under boiling conditions for 5.5 minutes, then ultrasonically clean it with deionized water and dry it with hot air.

[0127] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then pre-plated with gold using a gold plating process, with a plating thickness of 1.2~1.8μm.

[0128] S5. The gold-plated ceramic encapsulation butterfly shell assembly from step S4 is washed with deionized water at 60~65℃ and dried with hot air to obtain the ceramic encapsulation butterfly shell used in semiconductor lasers in this embodiment.

[0129] Example 12

[0130] S1. Clean the ceramic-encapsulated butterfly tube assembly with tap water, then rinse with hydrochloric acid for 1.5 minutes, and finally rinse with deionized water and dry with hot air.

[0131] S2. The ceramic encapsulated butterfly tube assembly after hot air drying in step S1 is subjected to nickel plating using a pre-nickel plating process, with a plating thickness of 3.2~3.8μm.

[0132] S3. Clean the ceramic encapsulated butterfly tube assembly after nickel plating in step S2 with a cleaning solution under boiling conditions for 4.5 minutes, then ultrasonically clean it with deionized water and dry it with hot air.

[0133] S4. The nickel-plated ceramic encapsulated butterfly tube assembly cleaned in step S3 is then pre-plated with gold using a gold plating process, with a plating thickness of 1.2~1.8μm.

[0134] S5. The gold-plated ceramic encapsulation butterfly shell assembly from step S4 is washed with deionized water at 60~65℃ and dried with hot air to obtain the ceramic encapsulation butterfly shell used in semiconductor lasers in this embodiment.

[0135] The processes of Examples 7-12 were tested in the same manner, and the specific test results are shown in Table 2.

[0136] Table 2 Specific preparation parameters for Examples 7-12

[0137] Example 7 Example 8 Example 9 Example 10 Example 11 Example 12 airtightness qualified qualified qualified qualified qualified qualified Lead pull qualified qualified qualified qualified qualified qualified Insulation performance qualified 1 non-compliant 1 non-compliant qualified qualified qualified pass rate 80% 88% 88% 84% 88% 90%

[0138] As can be seen from the data in Table 2, after process optimization, the pass rate of the preparation process of this application can be controlled at over 80%, which fully meets the requirements of high-power semiconductor lasers with the high testing standards of this application.

[0139] Based on the data in Table 2 and the analysis of the non-conforming products, only 3 products showed short circuits in the insulation performance tests of all non-conforming products, essentially overcoming the problem of metal bridging. The lowest resistance value among the non-short-circuit non-conforming products was 5.2 × 10⁻⁶. 8 Ω. Therefore, it is evident that the cleaning solution prepared with 0.12 mol / L potassium ferricyanide, 10% anhydrous sodium carbonate, and 15% sodium hydroxide provides excellent cleaning results for the product.

[0140] The pass rate data in Table 2 also shows that controlling the pickling time to 1.5-2 minutes, the cleaning time of the cleaning solution to 4.5-5 minutes, and using ultrasonic cleaning after nickel plating and hot water cleaning after gold plating can further improve the product pass rate.

[0141] The above are all preferred embodiments of this application, and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. A process for fabricating a ceramic packaged butterfly shell for semiconductor lasers, wherein the ceramic packaged butterfly shell is a 26-pin butterfly shell, comprising fabricating a multilayer ceramic metallization layer, sealing a metal part and the multilayer ceramic metallization layer, and assembling the ceramic packaged butterfly shell, characterized in that, It also includes the following steps: S1. Wash the assembled ceramic encapsulated butterfly tube shell with water, then acid wash it, and finally rinse it with deionized water and dry it. S2. Nickel plating treatment of the ceramic encapsulated butterfly tube shell after cleaning in step S1. S3. Clean the ceramic encapsulated butterfly tube shell after nickel plating in step S2 with a cleaning solution containing potassium ferricyanide while boiling, then clean it with deionized water and dry it. S4. After cleaning in step S3, the nickel-plated ceramic packaging butterfly shell is gold-plated, then cleaned with deionized water and dried to obtain a ceramic packaging butterfly shell for use in semiconductor lasers. In step S1, the pickling uses hydrochloric acid with a concentration of 30-40%, and the pickling time is controlled to be 1-3 minutes. In step S3, the cleaning solution includes potassium ferricyanide, sodium hydroxide, and anhydrous sodium carbonate. In the cleaning solution, the concentration of potassium ferricyanide is 0.1~0.15 mol / L, and the mass percentage concentration of anhydrous sodium carbonate is 10~15%. In step S2, the nickel plating process is carried out using chemical nickel plating.

2. The process for fabricating a ceramic packaging butterfly shell for semiconductor lasers according to claim 1, characterized in that, In step S2, the nickel plating process employs a pre-nickel plating method.

3. The ceramic packaging butterfly shell fabrication process for semiconductor lasers according to claim 1, characterized in that, In step S2, the nickel plating thickness is controlled to be 3~4μm.

4. The process for fabricating a ceramic packaging butterfly shell for semiconductor lasers according to claim 1, characterized in that, In step S3, the cleaning time in the boiling state of the cleaning solution is controlled to be 5-7 minutes.

5. The process for fabricating a ceramic packaging butterfly shell for semiconductor lasers according to claim 1, characterized in that, In step S3, the deionized water cleaning is performed using an ultrasonic cleaning method with deionized water as the cleaning medium.

6. The process for fabricating a ceramic packaging butterfly shell for semiconductor lasers according to claim 1, characterized in that, In step S4, the gold plating process employs a pre-plating method.

7. The process for fabricating a ceramic packaging butterfly shell for semiconductor lasers according to claim 6, characterized in that, In step S4, the gold plating thickness is controlled at 1.3~1.8μm.

Images