Bond strength detection device and detection method

Abstract

The present invention provides a bonding strength detection device and detection method, which relates to the field of semiconductor integrated circuit manufacturing technology and is designed to solve the problems of the existing wafer bonding strength detection method being complex in structure and occupying a large space. The bonding strength detection device includes a frame, a blade, a positioning module, a sensor module for monitoring whether the wafer is in a horizontal posture, and a collection module for collecting surface crack information of the wafer. The frame includes a supporting portion for supporting the wafer and a positioning portion for limiting the freedom of movement of the wafer in the X and Y directions; the positioning module and the positioning portion are arranged on both sides of the supporting portion, and the positioning module is configured to make the wafer abut against the positioning portion; the blade is movably arranged on the frame for extending into the bonding interface of the wafer; the sensor module is installed on the frame; the collection module is fixedly arranged relative to the frame and is located above the supporting portion. The present invention has a simple structure and occupies a small space.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to a bonding strength detection device and a detection method. Background Art

[0002] The semiconductor industry is developing rapidly, driving increasing demands for the integration and performance of ultra-large-scale integrated circuits (VLSIs). This trend of increasing chip functionality and integration has led to increasing technical requirements for various stages of the process. As the integration density of transistors in chips has gradually reached its upper limit, 3D-IC (Three Dimensional Integrated Circuit) technology has emerged. 3D ICs are defined as a system-level integrated structure that uses a bonding process to vertically interconnect multiple chips, increasing chip space and transistor integration. This improves IC speed and reduces power consumption.

[0003] Bonding technology is one of the most critical techniques for manufacturing 3D chips. Wafer bonding involves the chemical and physical bonding of two mirror-polished, homogeneous or heterogeneous wafers. After bonding, the atoms at the interface react under external forces, forming covalent bonds that bind the wafers together and achieve a specific bond strength. Bond strength testing is routinely performed in bonding processes, and the quality of the test results directly impacts subsequent processes.

[0004] Currently, wafer bond strength testing relies on vacuum suction on a chuck to position the wafer. This requires an additional gas circuit assembly, which is not only complex and space-consuming, but also involves uncertainty in adjusting the suction force. Excessively high or low suction force can hinder subsequent testing. Furthermore, vacuum contamination from factory operations can negatively impact testing. Summary of the Invention

[0005] The first object of the present invention is to provide a bonding strength detection device to solve the technical problems of the existing wafer bonding strength detection method, which is caused by the use of vacuum adsorption to position the wafer, resulting in a complex structure and large space occupation.

[0006] The bonding strength detection device provided by the present invention includes a frame, a blade, a positioning module, a sensor module for monitoring whether the wafer is in a horizontal posture, and a collection module for collecting surface crack information of the wafer, wherein the frame includes a supporting part and a positioning part, the supporting part is configured to support the wafer, and the positioning part is configured to limit the freedom of movement of the wafer along the X and Y directions; the positioning module and the positioning part are arranged on both sides of the supporting part, and the positioning module is configured to make the wafer abut against the positioning part; the blade is movably arranged on the frame, and the blade is configured to extend into the bonding interface of the wafer; the sensor module is installed on the frame; the collection module and the frame are fixedly arranged relative to each other, and the collection module is located above the supporting part.

[0007] Furthermore, the positioning portion includes a positioning rib and a guiding bevel connected to the positioning rib, wherein the blade and the positioning rib are arranged on both sides of the supporting portion, and the guiding bevel is configured to guide the wafer into the supporting portion.

[0008] Furthermore, the bonding strength detection device further includes a feeding module, the feeding module includes a first linear driving member, the first linear driving member is mounted on the frame, and the blade is mounted on a power output end of the first linear driving member.

[0009] Furthermore, the feed module also includes a fine-tuning component, which includes a mounting block, a slider and a locking member, wherein the mounting block includes a first wall, a second wall and a third wall connected in sequence in a U shape, the first wall and the third wall are opposite and spaced apart along the Z direction, the slider is located between the first wall and the third wall, the slider is slidably connected to the second wall, and the sliding direction of the slider is perpendicular to the movement direction of the power output end of the first linear drive member, the blade is fixed to the slider; the locking member is configured to fix the slider; the second wall is fixedly connected to the power output end of the first linear drive member.

[0010] Furthermore, the first wall and the third wall are both provided with screw holes, and the locking member includes a locking screw screwed into each of the screw holes, and a free end of the locking screw abuts against the sliding block.

[0011] Furthermore, the bond strength detection device also includes a limit module, which includes a first stopper, a second stopper and a limiter, wherein the first stopper and the second stopper are fixed on the frame at intervals along the movement direction of the power output end of the first linear drive member, the limiter is relatively fixedly arranged to the mounting block, and the limiter is located between the first stopper and the second stopper.

[0012] Furthermore, the sensing module includes multiple groups of through-beam sensors, which are dispersedly arranged along the circumference of the wafer. Each group of through-beam sensors includes a signal transmitting end and a signal receiving end, and the signal transmitting end and the signal receiving end are arranged on both sides of the wafer along the radial direction of the wafer.

[0013] Furthermore, the positioning module includes a second linear drive and a push rod, the second linear drive is installed on the frame, the push rod is installed on the power output end of the second linear drive, and the second linear drive is configured to drive the push rod to extend to abut against the edge of the wafer.

[0014] Furthermore, there are two push rods, which are dispersedly arranged in a horizontal direction and located on both sides of the blade.

[0015] Furthermore, the bonding strength detection device further includes a transport module, and the transport module is configured to place the wafer on the supporting portion and take away the wafer located on the supporting portion.

[0016] The beneficial effects brought about by the bond strength detection device of the present invention are:

[0017] When the wafer's bond strength needs to be tested, the wafer can be placed on the support portion of the rack, and the positioning portion is used to restrict the wafer's freedom of movement in the X and Y directions to achieve rough positioning of the wafer. At this time, the acquisition module is located above the wafer. The sensing module then monitors whether the wafer is horizontal, and the positioning module is used to abut the wafer against the positioning portion to achieve positioning of the wafer. When the sensing module detects that the wafer is horizontal, the blade will move toward the wafer to extend into the wafer's bonding interface. During this process, the acquisition module captures real-time crack information on the wafer to detect the wafer's bond strength.

[0018] This bond strength testing device uses a positioning portion mounted on the frame to achieve rough positioning of the wafer, and further utilizes a positioning module to position the wafer, ensuring that the wafer is stably positioned on the support portion without shifting. This mechanical structure for wafer positioning eliminates the need for additional gas path components, resulting in a simple structure and a small footprint. This improves the existing problems of using vacuum adsorption to position the wafer, resulting in complex structures and large space requirements. It also avoids interference with subsequent testing processes caused by uncertain vacuum adsorption force, and avoids the adverse effects of factory vacuum contamination on test results.

[0019] The second object of the present invention is to provide a bonding strength detection method to solve the technical problems of the existing wafer bonding strength detection method, which is caused by the use of vacuum adsorption to position the wafer, resulting in a complex structure and large space occupation.

[0020] The bond strength detection method provided by the present invention uses the above-mentioned bond strength detection device to perform bond strength detection on a wafer, comprising the following steps:

[0021] Place the wafer on the support part of the rack and use the positioning part to limit the freedom of movement of the wafer in the X and Y directions;

[0022] The sensing module monitors whether the wafer is in a horizontal position; if so, the positioning module brings the wafer into contact with the positioning part to position the wafer, and the blade moves toward the wafer and extends into the bonding interface of the wafer;

[0023] The acquisition module captures the crack information of the wafer in real time.

[0024] The beneficial effects brought about by the bond strength detection method of the present invention are:

[0025] The bonding strength detection method uses the above-mentioned bonding strength detection device to detect the bonding strength of the wafer. Accordingly, the bonding strength detection method has all the advantages of the above-mentioned bonding strength detection device, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0027] Figure 1 A schematic structural diagram of a bonding strength detection device provided by an embodiment of the present invention;

[0028] Figure 2 A schematic diagram showing the principle of the bonding strength detection device provided in an embodiment of the present invention when performing rough positioning on a wafer;

[0029] Figure 3 A schematic diagram of a partial structure of a bonding strength detection device provided in an embodiment of the present invention;

[0030] Figure 4 for Figure 3 A magnified view of the local structure at point A;

[0031] Figure 5 This is a flow chart of a bonding strength detection method provided by an embodiment of the present invention.

[0032] Description of reference numerals:

[0033] 100-rack; 200-blade; 300-positioning module; 400-sensing module; 500-collection module; 600-feeding module; 700-limiting module; 800-transportation module; 900-wafer;

[0034] 110-supporting part; 120-positioning part; 130-profile; 140-side plate; 150-opening;

[0035] 121-positioning rib; 122-guiding bevel edge;

[0036] 310 - second linear drive member; 320 - push rod; 330 - first bracket; 340 - second bracket;

[0037] 411-Signal transmitting end; 412-Signal receiving end;

[0038] 610 - first linear drive member; 620 - mounting block; 630 - slider; 640 - locking member;

[0039] 621-first wall; 622-second wall; 623-third wall;

[0040] 710-first stopper; 720-second stopper; 730-limiting member;

[0041] 810-Manipulator. DETAILED DESCRIPTION

[0042] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the following detailed description of the specific embodiments of the present invention is given in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0043] Figure 1 This is a schematic diagram of the structure of the bonding strength detection device provided in this embodiment. Figure 1As shown, this embodiment provides a bonding strength detection device, including a frame 100, a blade 200, a positioning module 300, a sensor module 400 for monitoring whether the wafer 900 is in a horizontal posture, and a collection module 500 for collecting surface crack information of the wafer 900. Specifically, the frame 100 includes a supporting portion 110 and a positioning portion 120. The supporting portion 110 is configured to support the wafer 900, and the positioning portion 120 is configured to limit the wafer 900 along the X and Y directions. The positioning module 300 and the positioning part 120 are respectively arranged on both sides of the supporting part 110, and the positioning module 300 is configured to make the wafer 900 abut against the positioning part 120; the blade 200 is movably set on the frame 100, and the blade 200 is configured to extend into the bonding interface of the wafer 900; the sensor module 400 is installed on the frame 100; the acquisition module 500 is fixedly arranged relative to the frame 100, and the acquisition module 500 is located above the supporting part 110.

[0044] When the bonding strength of wafer 900 needs to be tested, wafer 900 can be placed on the supporting portion 110 of the rack 100, and the positioning portion 120 is used to restrict the freedom of movement of wafer 900 in the X and Y directions to achieve rough positioning of wafer 900. At this time, the acquisition module 500 is located above wafer 900. Afterwards, the sensing module 400 is used to monitor whether wafer 900 is in a horizontal position, and the positioning module 300 is used to make wafer 900 abut against the positioning portion 120 to achieve positioning of wafer 900. When the sensing module 400 detects that wafer 900 is in a horizontal position, the blade 200 will move toward wafer 900 to extend into the bonding interface of wafer 900. During this process, the acquisition module 500 captures crack information on wafer 900 in real time to achieve bonding strength testing of wafer 900.

[0045] This bond strength testing device utilizes a positioning portion 120 mounted on a frame 100 to achieve rough positioning of the wafer 900, and further utilizes a positioning module 300 to position the wafer 900, ensuring that the wafer 900 is stably positioned on the support portion 110 without shifting. This mechanical method of positioning the wafer 900 eliminates the need for additional gas path components, resulting in a simple structure and a small footprint. This improves the existing issues of the complex structure and large space required for positioning the wafer 900 using vacuum suction. It also avoids interference with subsequent testing processes caused by uncertain vacuum suction force, and avoids the adverse effects of factory vacuum contamination on test results.

[0046] It should be noted that in this embodiment, when the sensor module 400 detects that the wafer 900 is not in a horizontal posture, it will send an abnormal signal to the host computer to alarm. At this time, human intervention measures can be taken to adjust the horizontal posture of the wafer 900 until the abnormal signal is effectively eliminated.

[0047] Please continue to refer to Figure 1 In this embodiment, the acquisition module 500 may include an infrared camera. Specifically, the infrared camera may be fixed to the rack 100 via a mounting bracket (not shown).

[0048] Please continue to refer to Figure 1 In this embodiment, the main body of the frame 100 is assembled from a plurality of profiles 130. This arrangement not only improves the structural strength of the frame 100 but also reduces the weight of the frame 100, thereby achieving the purpose of reducing the weight of the bond strength detection device of this embodiment.

[0049] Specifically, in this embodiment, the profile 130 used to form the main body of the frame 100 is an aluminum alloy profile.

[0050] Please continue to refer to Figure 1 In this embodiment, the bonding strength detection device may further include a transport module 800 , wherein the transport module 800 is configured to place the wafer 900 on the supporting portion 110 and remove the wafer 900 located on the supporting portion 110 .

[0051] By providing the transport module 800 , automatic loading and unloading of the wafer 900 can be achieved, with a high degree of automation, thereby reducing the labor intensity of the staff.

[0052] Specifically, the transport module 800 includes a robot 810, and the transport module 800 implements a grabbing operation of the wafer 900 through the robot 810. The robot 810 grabs the wafer 900 by adsorption, wherein the adsorption method of the robot 810 can be Bernoulli adsorption or vacuum adsorption.

[0053] Please continue to refer to Figure 1 A side panel 140 is fixedly installed on the side of the rack 100, and an opening 150 is opened on the side panel 140. The main body of the transport module 800 is arranged on the side of the side panel 140 away from the rack 100. The robot 810 places the wafer 900 on the supporting part 110 through the opening 150, or takes the wafer 900 placed on the supporting part 110 out of the opening 150.

[0054] Specifically, in this embodiment, the wafer 900 to be tested can be placed in a wafer box (not shown in the figure) in advance. When the bonding strength of the wafer 900 needs to be tested, the robot 810 takes the wafer 900 out of the wafer box.

[0055] It should be noted that, in this embodiment, how the transport module 800 realizes the loading and unloading operations of the wafer 900 is not an improvement point of the present application, so it will not be described in detail.

[0056] Figure 2 The schematic diagram of the principle of the bonding strength detection device provided in this embodiment when performing rough positioning on the wafer 900. Figure 2 As shown, the positioning portion 120 may include a positioning rib 121 and a guide bevel 122 connected to the positioning rib 121. Specifically, the blade 200 and the positioning rib 121 are arranged on both sides of the supporting portion 110, and the guide bevel 122 is configured to guide the wafer 900 into the supporting portion 110.

[0057] When the robot 810 places the wafer 900 on the supporting part 110, the guiding bevel 122 of the positioning part 120 will first guide the edge of the wafer 900 so that the wafer 900 slides into the supporting part 110; then, under the action of the positioning module 300, the wafer 900 is pressed against the positioning rib 121, thereby achieving positioning on the supporting part 110.

[0058] This arrangement of the positioning portion 120 facilitates the placement of the wafer 900 , thereby facilitating rapid loading of the wafer 900 .

[0059] Figure 3 This is a partial structural diagram of the bonding strength detection device provided in this embodiment. Figure 4 for Figure 3 A magnified view of the local structure at point A. Please continue to refer to Figure 1 , and combined with Figure 3 and Figure 4 In this embodiment, the bond strength detection device may further include a feeding module 600. Specifically, the feeding module 600 includes a first linear driving member 610. The first linear driving member 610 is installed on the frame 100, and the blade 200 is installed on the power output end of the first linear driving member 610.

[0060] When the bonding strength of the wafer 900 on the supporting portion 110 needs to be tested, the first linear drive 610 can be started to drive the blade 200 to feed so that the blade 200 extends into the bonding interface of the wafer 900 .

[0061] By setting up a feeding module 600 mainly composed of a first linear drive component 610, the feeding module 600 is used to feed the blade 200, so that the blade 200 can be fed automatically without manual intervention of the staff, further reducing the labor intensity during the bonding strength detection process of the wafer 900.

[0062] Please continue to refer to Figure 4In this embodiment, the feed module 600 may further include a fine-tuning component, specifically, the fine-tuning component includes a mounting block 620, a slider 630 and a locking member 640, wherein the mounting block 620 includes a first wall 621, a second wall 622 and a third wall 623 connected in sequence in a U shape, the first wall 621 and the third wall 623 are opposite and spaced apart along the Z direction, the slider 630 is located between the first wall 621 and the third wall 623, the slider 630 is slidably connected to the second wall 622, and the sliding direction of the slider 630 is perpendicular to the movement direction of the power output end of the first linear drive member 610, the blade 200 is fixed to the slider 630; the locking member 640 is configured to fix the slider 630; the second wall 622 is fixedly connected to the power output end of the first linear drive member 610.

[0063] When the position of the blade 200 needs to be adjusted, the locking effect of the locking member 640 on the slider 630 can be released first, and then the slider 630 can be slid on the second wall 622 to adjust the position of the slider 630. Since the blade 200 is fixedly connected to the slider 630, the position of the blade 200 can be adjusted. When the blade 200 is adjusted to the desired position, the locking member 640 is used to fix the slider 630, thereby fixing the blade 200.

[0064] Such a setting realizes the adjustment of the position of the blade 200. When the wafer 900 is placed on the supporting part 110, the blade 200 located on its right side can be accurately adjusted to the middle position of the wafer 900 under the action of the fine-tuning component, thereby ensuring the validity of the crack test results, enabling the blade 200 to be accurately inserted into the bonding interface position of the wafer 900, ensuring the validity of the bonding strength test, and also enabling the blade 200 to meet the bonding requirements of the wafer 900 in various positions, thereby improving the versatility of the bonding strength detection device of this embodiment.

[0065] In this embodiment, the height position of the blade 200 is adjustable, and the adjustment accuracy of the blade 200 can be but not limited to 1μm. Therefore, it can adapt to the adjustment of wafers 900 of different thicknesses, so that it can meet the bonding strength detection requirements of wafers 900 of different thicknesses.

[0066] It should be noted that, in this embodiment, the movement direction of the power output end of the first linear drive member 610 is along the Y direction; the sliding direction of the blade 200 relative to the mounting block 620 is along the X direction.

[0067] Please continue to refer to Figure 4 Specifically, in this embodiment, screw holes are formed in the first wall 621 and the third wall 623 , and the locking member 640 includes a locking screw screwed into the screw hole, wherein the free end of the locking screw abuts against the slider 630 .

[0068] When it is necessary to fix the slider 630, tighten the locking screws set on the first wall 621 and the third wall 623 so that they press against the slider 630 from the upper surface of the slider 630 and the lower surface of the slider 630 respectively, thereby fixing the position of the slider 630; when it is necessary to adjust the position of the slider 630, loosen the locking screws set on the first wall 621 and the third wall 623 to release the force exerted by the two on the slider 630, and then release the slider 630 to adjust the position of the slider 630.

[0069] This locking structure is simple in structure, low in cost, and easy to operate. For wafers 900 of the same thickness, the position of the blade 200 can be fixed after adjustment to prevent position shifting, thereby ensuring smooth bond strength testing.

[0070] Specifically, in this embodiment, a slide rail is fixedly mounted on the inner surface of the second wall 622, and a slide groove is defined in the slider 630, through which the slider 630 is slidably connected to the slide rail. This arrangement, on the one hand, guides the relative movement of the slider 630 and the mounting block 620 to a certain extent, and on the other hand, ensures that after the slider 630 is locked in position by the locking member 640, the slider 630 can remain in a balanced state, preventing the slider 630 from shaking, thereby ensuring the smooth implementation of the bond strength testing process.

[0071] Of course, a sliding groove may be provided on the inner surface of the second wall 622 , and a sliding rail may be fixedly provided on the slider 630 .

[0072] Specifically, in this embodiment, the first linear drive member 610 may be a linear motor. This configuration allows the blade 200 to advance and retract more smoothly, thereby reducing damage to the wafer 900.

[0073] Please continue to refer to Figure 4 In this embodiment, the bond strength testing device may further include a limiting module 700. Specifically, the limiting module 700 includes a first stopper 710, a second stopper 720, and a limiting member 730. The first stopper 710 and the second stopper 720 are fixedly mounted on the frame 100 at intervals along the direction of motion of the power output end of the first linear drive member 610. The limiting member 730 is fixedly mounted relative to the mounting block 620 and is located between the first stopper 710 and the second stopper 720. In this embodiment, the first stopper 710 is positioned closer to the supporting portion 110 than the second stopper 720.

[0074] During the process of the blade 200 feeding toward the direction approaching the wafer 900, when the limit member 730 contacts the first stop member 710, the blade 200 will stop feeding movement. At this time, the blade 200 has been inserted into the bonding interface of the wafer 900; during the process of the blade 200 retreating toward the direction away from the wafer 900, when the limit member 730 contacts the second stop member 720, the blade 200 will stop retreating movement. At this time, the blade 200 has been pulled out from the bonding interface of the wafer 900.

[0075] By providing the limit module 700 , the movement stroke of the blade 200 is limited, so that the feeding distance of the blade 200 is consistent each time, thereby ensuring the consistency of the bonding strength detection of different wafers.

[0076] Please continue to refer to Figure 1 and Figure 3 In this embodiment, the sensing module 400 includes multiple groups of through-beam sensors, which are dispersedly arranged along the circumference of the wafer 900. Each group of through-beam sensors includes a signal transmitting end 411 and a signal receiving end 412, wherein the signal transmitting end 411 and the signal receiving end 412 are arranged on both sides of the wafer 900 along the radial direction of the wafer 900.

[0077] When the wafer 900 is in a horizontal position, the signal emitted by the signal transmitting end 411 in the shooting sensor will be received by the signal receiving end 412; and when the wafer 900 has a horizontal abnormality, the signal emitted by the signal transmitting end 411 will be blocked by the wafer 900. At this time, the signal receiving end 412 cannot receive the signal emitted from the signal transmitting end 411, and will send the abnormal signal to the host computer for an alarm reminder.

[0078] This arrangement of the sensor module 400 can monitor the horizontal posture of the wafer 900 in real time, thereby ensuring smooth progress of the bonding strength detection.

[0079] Specifically, in this embodiment, two groups of through-beam sensors are arranged in a cross-shaped configuration. That is, the two signal transmitting terminals 411 and the two signal receiving terminals 412 of the two through-beam sensors are arranged at 90° angles to each other. This configuration allows monitoring of the horizontal position of the wafer 900 using only two groups of through-beam sensors, resulting in low cost and reliable monitoring.

[0080] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the positioning module 300 includes a second linear drive member 310 and a push rod 320. Specifically, the second linear drive member 310 is installed on the frame 100, and the push rod 320 is installed at the power output end of the second linear drive member 310, wherein the second linear drive member 310 is configured to drive the push rod 320 to extend to abut against the edge of the wafer 900.

[0081] After the sensing module 400 detects that the wafer 900 is in a horizontal position, the second linear drive member 310 extends the drive push rod 320 to abut against the edge of the wafer 900, thereby abutting the wafer 900 against the positioning portion 120 to achieve positioning of the wafer 900; thereafter, the first drive member drives the blade 200 to feed, so that the blade 200 is inserted into the bonding interface of the wafer 900. During this process, the push rod 320 can always abut against the edge of the wafer 900; when the blade 200 is pulled out from the bonding interface of the wafer 900, since the push rod 320 always abuts against the edge of the wafer 900, the wafer 900 continues to be restricted by the push rod 320 and will not move with the blade 200.

[0082] This arrangement of the in-place module 300 has a simple structure, a simple control strategy and low cost.

[0083] Please continue to refer to Figure 3 and Figure 4 In this embodiment, the length of the push rod 320 extends along the Z direction. This configuration allows the push rod 320 to abut against the edge of the wafer 900 using its circumference, which can reduce the installation height requirement of the push rod 320 and thus reduce the assembly difficulty.

[0084] Please continue to refer to Figure 3 and Figure 4 In this embodiment, there are two push rods 320, which are dispersed in the horizontal direction and located on both sides of the blade 200. In other words, the two push rods 320 are spaced apart in the X direction, and the blade 200 can be inserted into the bonding interface of the wafer 900 through the space formed by the two push rods 320.

[0085] By setting two spaced apart push rods 320 in the positioning module 300, the wafer 900 is positioned by contacting the edges of the wafer 900 with the two push rods 320, thereby avoiding the rotation of the wafer 900 due to the unique contact point, thereby improving the reliability of positioning.

[0086] Please continue to refer to Figure 4 In this embodiment, the positioning module 300 may further include a first bracket 330 and a second bracket 340 , wherein the second linear drive member 310 is fixedly mounted on the frame 100 through the first bracket 330 , and the two push rods 320 are fixedly mounted on the power output end of the second linear drive member 310 through the second bracket 340 .

[0087] Specifically, in this embodiment, the second linear driving member 310 may be a cylinder, which can improve the extension and retraction efficiency of the push rod 320, thereby improving the working efficiency of the bonding strength detection device of this embodiment.

[0088] Figure 5 Flowchart of the bonding strength detection method provided in this embodiment. Figure 5 As shown, this embodiment also provides a bonding strength detection method, which uses the above-mentioned bonding strength detection device to perform bonding strength detection on a wafer, including the following steps:

[0089] S100: placing the wafer 900 on the supporting portion 110 of the rack 100, and using the positioning portion 120 to restrict the movement freedom of the wafer 900 along the X and Y directions;

[0090] S200: The sensing module 400 monitors whether the wafer 900 is in a horizontal posture; if so, execute step S210: the positioning module 300 makes the wafer 900 abut against the positioning part 120 to position the wafer 900, and the blade 200 moves toward the direction of the wafer 900 and extends into the bonding interface of the wafer 900; if not, execute step S220: take human intervention measures to adjust the horizontal posture of the wafer 900.

[0091] S300 : The acquisition module 500 captures crack information of the wafer 900 in real time.

[0092] The bonding strength detection method uses the above-mentioned bonding strength detection device to detect the bonding strength of the wafer. Accordingly, the bonding strength detection method has all the advantages of the above-mentioned bonding strength detection device, which will not be described in detail here.

[0093] The process of the bonding strength detection device performing bonding strength detection on the wafer 900 is as follows.

[0094] When performing a bond strength test on wafer 900, the slider 630 can be released by first loosening the locking member 640. The sliding connection between the slider 630 and the second wall 622 is then used to adjust the horizontal position of the blade 200 so that the blade 200 is positioned between the bonding interfaces of the wafer 900 to ensure the effectiveness of the bond strength test. Simultaneously, the transport module 800, through the robot 810, grabs the wafer 900 from the cassette and places it on the support portion 110 of the rack 100. During this process, the positioning portion 120 is used to achieve rough positioning of the wafer 900. The transport module 800 then returns to its initial position to facilitate the next wafer 900 grabbing operation. This completes the preparations for the bond strength test.

[0095] When entering the detection stage of the bonding strength of wafer 900, first, the sensor modules 400 arranged around wafer 900 are turned on to monitor in real time whether the wafer 900 placed on the supporting part 110 is in a horizontal posture. When it is detected that the level of wafer 900 is abnormal, an abnormal signal will be sent to the host computer for alarm reminder. At this time, human intervention measures can be taken to adjust the horizontal posture of wafer 900 until the abnormal signal is effectively eliminated; then, the second linear drive member 310 is actuated to drive the push rod 320 to contact the edge of wafer 900, so that wafer 900 is against the positioning retaining edge 121 of the positioning part 120, thereby realizing the positioning of wafer 900. After the wafer 900 is positioned, the second linear drive member 310 can either return to its initial position or continue to maintain a state of contact with the edge of the wafer 900; thereafter, the first linear drive member 610 is actuated to drive the blade 200 to move toward the direction close to the wafer 900 to insert into the bonding interface of the wafer 900. During this process, the limit module 700 is used to ensure that the feeding distance of the blade 200 is consistent each time; after the blade 200 is inserted into the bonding interface, the acquisition module 500 located above it captures the crack information of the wafer 900 in real time and transmits it to the host computer in real time. The crack length is calculated through the corresponding image recognition technology and algorithm, and the real-time bonding strength value can be obtained by substituting it into the corresponding formula.

[0096] After completing the detection of the bonding strength of the wafer 900, the second linear drive member 310 continues to drive the push rod 320 to move to a position in contact with the edge of the wafer 900 to limit the wafer 900; thereafter, the first linear drive member 610 drives the blade 200 to return to its initial position; when the blade 200 returns to its initial position, the second linear drive member 310 can drive the push rod 320 back to its initial position.

[0097] Finally, the transport module 800 removes the inspected wafer 900 from the supporting portion 110 and places it back to the corresponding position so as to enter the next inspection cycle.

[0098] It should be noted that in this embodiment, how to use the acquisition module 500 to collect crack information of the wafer 900 and transmit the collected crack information to the host computer for corresponding calculation is an existing technology well known to those skilled in the art. This embodiment does not improve this, so it will not be repeated.

[0099] In summary, the bonding strength detection device has a simple structure, is easy to use, and has a low cost, which is beneficial to improving the working efficiency and quality of the bonding strength detection of the wafer 900.

[0100] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

[0101] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article, or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of other identical elements in the process, method, article, or device that includes the element.

[0102] In the above embodiments, the descriptions of directions such as “upper”, “lower”, and “side” are all based on the drawings.

[0103] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A bonding strength detection device, characterized in that: The invention comprises a frame (100), a blade (200), a positioning module (300), a sensor module (400) for monitoring whether a wafer (900) is in a horizontal posture, and a collection module (500) for collecting surface crack information of the wafer (900), wherein the frame (100) comprises a supporting portion (110) and a positioning portion (120), the supporting portion (110) is configured to support the wafer (900), and the positioning portion (120) is configured to limit the freedom of movement of the wafer (900) along the X direction and the Y direction; the positioning module (300) and the positioning portion (120) are respectively arranged on both sides of the supporting portion (110), and the positioning module (300) is configured to make the wafer (900) abut against the positioning portion (120); the blade (200) is movably arranged on the rack (100), and the blade (200) is configured to extend into the bonding interface of the wafer (900); the sensing module (400) is installed on the rack (100); the acquisition module (500) is fixedly arranged relative to the rack (100), and the acquisition module (500) is located above the supporting part (110); the sensing module (400) includes a plurality of groups of corresponding sensors, and the plurality of groups of corresponding sensors are dispersedly arranged along the circumference of the wafer (900), and each group of the corresponding sensors includes a signal transmitting end (411) and a signal receiving end (412), and the signal transmitting end (411) and the signal receiving end (412) are arranged on both sides of the wafer (900) along the radial direction of the wafer (900).

2. The bonding strength detection device according to claim 1, wherein: The positioning portion (120) includes a positioning rib (121) and a guiding bevel (122) connected to the positioning rib (121), wherein the blade (200) and the positioning rib (121) are respectively arranged on both sides of the supporting portion (110), and the guiding bevel (122) is configured to guide the wafer (900) into the supporting portion (110).

3. The bonding strength detection device according to claim 2, wherein: The bonding strength detection device further comprises a feeding module (600), wherein the feeding module (600) comprises a first linear driving member (610), wherein the first linear driving member (610) is mounted on the frame (100), and the blade (200) is mounted on a power output end of the first linear driving member (610).

4. The bonding strength detection device according to claim 3, characterized in that: The feeding module (600) further includes a fine-tuning component, which includes a mounting block (620), a slider (630) and a locking member (640), wherein the mounting block (620) includes a first wall (621), a second wall (622) and a third wall (623) connected in sequence in a U shape, the first wall (621) and the third wall (623) are opposite and spaced apart along the Z direction, the slider (630) is located between the first wall (621) and the third wall (623), the slider (630) is slidably connected to the second wall (622), and the sliding direction of the slider (630) is perpendicular to the movement direction of the power output end of the first linear drive member (610), and the blade (200) is fixedly arranged on the slider (630); the locking member (640) is configured to fix the slider (630); the second wall (622) is fixedly connected to the power output end of the first linear drive member (610).

5. The bonding strength detection device according to claim 4, characterized in that: The first wall (621) and the third wall (623) are both provided with screw holes, and the locking member (640) includes a locking screw screwed into each of the screw holes, and the free end of the locking screw abuts against the slider (630).

6. The bonding strength detection device according to claim 4, characterized in that: The bonding strength detection device further comprises a limiting module (700), the limiting module (700) comprising a first stopper (710), a second stopper (720) and a limiting member (730), wherein the first stopper (710) and the second stopper (720) are fixedly arranged on the frame (100) at intervals along the movement direction of the power output end of the first linear drive member (610), the limiting member (730) and the mounting block (620) are fixedly arranged relative to each other, and the limiting member (730) is located between the first stopper (710) and the second stopper (720).

7. The bond strength detection device according to any one of claims 1 to 6, characterized in that: The positioning module (300) includes a second linear drive member (310) and a push rod (320), wherein the second linear drive member (310) is mounted on the frame (100), and the push rod (320) is mounted on the power output end of the second linear drive member (310), and the second linear drive member (310) is configured to drive the push rod (320) to extend so as to abut against the edge of the wafer (900).

8. The bonding strength detection device according to claim 7, characterized in that: There are two push rods (320), which are dispersedly arranged in a horizontal direction and located on both sides of the blade (200).

9. The bond strength detection device according to any one of claims 1 to 6, characterized in that: The bonding strength detection device further comprises a transport module (800), wherein the transport module (800) is configured to place the wafer (900) on the supporting portion (110) and to remove the wafer (900) located on the supporting portion (110).

10. A bonding strength detection method, characterized in that: Using the bonding strength detection device according to any one of claims 1 to 9 to perform bonding strength detection on a wafer comprises the following steps: Placing the wafer (900) on the supporting portion (110) of the rack (100), and using the positioning portion (120) to limit the freedom of movement of the wafer (900) along the X direction and the Y direction; The sensing module (400) monitors whether the wafer (900) is in a horizontal posture; If so, the positioning module (300) causes the wafer (900) to abut against the positioning portion (120) to position the wafer (900), and the blade (200) moves toward the wafer (900) and extends into the bonding interface of the wafer (900); The acquisition module (500) captures crack information of the wafer (900) in real time.

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