A high-temperature liquid cleaning and etching device for wafers and a cleaning and etching method

Abstract

The present invention discloses a high-temperature liquid medicine cleaning and etching device for wafers, comprising a closed chamber with exhaust channels on both sides of the closed chamber; a wafer placement table is arranged in the closed chamber, and claws are arranged on the wafer placement table; a back high-temperature liquid medicine nozzle extends upward from the bottom of the wafer placement table to the bottom of the back of the wafer; a surface insulation part is liftably arranged above the wafer, and an inlet is arranged on the surface insulation part; a back insulation part is liftably arranged below the wafer; a front high-temperature liquid medicine nozzle is movably arranged around the wafer placement table; a cleaning nozzle is arranged in the surface insulation part and points to the wafer. The present invention also discloses a cleaning and etching method for a high-temperature liquid medicine cleaning and etching device for wafers. The present invention guides the airflow by using a surface insulation part and a back insulation part that are liftably arranged above and below the wafer and three front high-temperature liquid medicine nozzles and a guide component to ensure that the liquid is in a high-temperature range, thereby improving the uniformity of the etching rate on the upper surface of the wafer.

Description

Technical Field

[0001] The invention belongs to the technical field of wafer high-temperature liquid cleaning and etching, and in particular relates to a wafer high-temperature liquid cleaning and etching device and a cleaning and etching method. Background Art

[0002] A wafer refers to a silicon chip used to make silicon semiconductor circuits. Its raw material is silicon. Wafers are widely used in the fields of electronics and semiconductors.

[0003] Wafers need to go through multiple steps in the production process, among which cleaning and etching on the wafer is an important process. Currently, when cleaning and etching the wafer, high-temperature chemical liquid is needed for cleaning and etching. However, in actual use, it is found that when the high-temperature chemical solution is supplied to the wafer, the high-temperature chemical solution on the wafer flows on the substrate and is discharged. At the same time, the temperature of the high-temperature chemical solution gradually decreases. As the temperature decreases, the etching rate and other characteristics of the chemical solution will also decrease, resulting in uneven etching rate on the upper surface of the wafer, which has brought many adverse effects on the actual production of the wafer. Summary of the invention

[0004] The purpose of the present invention is to overcome the shortcomings of the prior art and to provide a high-temperature liquid cleaning and etching device and a cleaning and etching method for wafers that can ensure that the space for high-temperature liquid is relatively closed when cleaning and etching wafers, thereby keeping the temperature of the high-temperature liquid on the wafer relatively stable, reducing heat loss, and improving the efficiency and effect of wafer cleaning and etching.

[0005] To achieve the above object, the technical solution adopted by the present invention is: a high-temperature liquid cleaning and etching device for wafers, comprising:

[0006] A closed chamber, wherein both sides of the closed chamber are provided with exhaust passages with exhaust ports facing upwards;

[0007] A wafer placement table is arranged in the closed chamber, and the wafer placement table is provided with claws for clamping the wafer;

[0008] The back high temperature liquid nozzle extends upward from the bottom of the wafer placement table to the bottom of the back of the wafer on the claws, and is used to spray the back of the wafer with high temperature liquid.

[0009] A surface heat preservation member is arranged above the wafer and can be raised and lowered to keep the upper part of the wafer warm. The surface heat preservation member is provided with a plurality of inlets for the front high-temperature liquid nozzle to enter;

[0010] A back heat preservation member is movably arranged on the wafer placement table and located below the wafer, and is used to keep the back of the wafer warm;

[0011] At least one front high-temperature liquid medicine nozzle is movably arranged around the wafer placement table, and the front high-temperature liquid medicine nozzle is used to move to the entrance and spray the high-temperature liquid medicine onto the upper surface of the wafer;

[0012] At least one cleaning nozzle is arranged in the surface heat preservation component and points to the wafer.

[0013] Furthermore, it also includes a flow guide component for guiding the direction of airflow, and the flow guide component includes:

[0014] A movable sealing block is arranged at the air outlet above the exhaust channel in a liftable manner;

[0015] An upper guide cover is arranged between the surface insulation member and the carrier platform and can be lifted up and down, and the upper guide cover can surround the circumference of the wafer, wherein when the upper guide cover abuts against the surface insulation member, the airflow is guided to the air outlet of the exhaust channel;

[0016] The lower guide cover can be lifted up and down to contact the lower part of the upper guide cover, and the lower guide cover surrounds the circumference of the wafer.

[0017] Furthermore, there are three front high-temperature chemical liquid nozzles, and the three front high-temperature chemical liquid nozzles enter different areas of the wafer through multiple inlets.

[0018] Furthermore, the back heat-insulating component and the surface heat-insulating component are both heat-insulating plates with built-in heating components.

[0019] A heat preservation etching method for a wafer high temperature liquid cleaning device comprises the following steps:

[0020] S1 upper and lower drainage covers are located below the wafer. The airflow flows through the upper insulation and upper drainage cover and is discharged from the exhaust channel. At the same time, the three front high-temperature liquid nozzles start pre-spraying liquid;

[0021] S2 The upper drainage cover rises, guiding the airflow to flow between the upper drainage cover and the lower drainage cover and then be discharged from the exhaust channel, while the cleaning nozzle wets the upper surface of the wafer;

[0022] S3: The upper hood rises and the lower hood rises synchronously, the moving block moves upward to open the air outlet, and the airflow is guided from the top of the upper hood to the exhaust port, and finally discharged from the top of the air channel. At this time, the upper hood and the lower hood surround the wafer, and the back insulation piece rises and approaches the wafer, and then the back high-temperature liquid nozzle starts to spray liquid for treatment;

[0023] S4: The three front high-temperature liquid nozzles are moved to the three entrances to clean the upper surface of the wafer with liquid;

[0024] The three front high-temperature liquid nozzles of S5 and the back insulation component return to their initial positions, and the upper and lower drainage covers return to their original positions, so that the airflow is discharged normally.

[0025] Due to the application of the above technical solution, the present invention has the following advantages compared with the prior art:

[0026] 1. A liftable surface insulation component and a back insulation component are set above the wafer, so that the wafer is in a relatively closed space during cleaning and etching, ensuring that the high-temperature solution is kept at a stable high temperature on the wafer, improving the cleaning and etching effect and improving the cleaning and etching uniformity.

[0027] 2. Three front high-temperature liquid nozzles are set up to spray high-temperature liquid on the wafer, so that the high-temperature liquid can be distributed on the wafer quickly and with uniform temperature, ensuring the cleaning and etching efficiency of the wafer and improving the cleaning and etching uniformity.

[0028] 3. A guide component is added to keep the wafer in a relatively sealed space when it is cleaned with high-temperature liquid, so there will not be a large heat loss.

[0029] 4. The cleaning and etching method of the wafer cleaning equipment using high-temperature liquid medicine is easy to operate, and the wafer can be cleaned quickly and effectively using high-temperature liquid medicine. The cleaning effect is good and the speed is fast, the etching uniformity is good, and the yield rate is high, which meets the actual needs. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The technical solution of the present invention is further described below in conjunction with the accompanying drawings:

[0031] Figure 1 It is a schematic structural diagram of a high-temperature liquid cleaning device for wafers in one embodiment of the present invention;

[0032] Figure 2 This is a diagram showing the use status of a high-temperature chemical solution cleaning device for wafers in step S1 according to an embodiment of the present invention;

[0033] Figure 3 This is a diagram showing the use status of a high-temperature chemical solution cleaning device for wafers in step S2 according to an embodiment of the present invention;

[0034] Figure 4 This is a diagram showing the use status of a high-temperature chemical solution cleaning device for wafers in step S3 according to an embodiment of the present invention;

[0035] Figure 5 This is a diagram showing the use status of a high-temperature chemical solution cleaning device for wafers in step S4 according to an embodiment of the present invention;

[0036] Figure 6 This is a diagram showing the use status of a high-temperature chemical solution cleaning device for wafers in step S5 according to an embodiment of the present invention;

[0037] Among them: a closed chamber 1, a wafer placement table 2, a back high-temperature liquid nozzle 3, a surface insulation component 4, a back insulation component 5, a front high-temperature liquid nozzle 6, a wafer 7, a cleaning nozzle 8, an exhaust channel 10, an air outlet 11, a clamping claw 20, an upper drainage cover 30, a lower drainage cover 31, a movable sealing block 32, and an inlet 40. DETAILED DESCRIPTION

[0038] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0039] See also Figure 1 A high-temperature liquid cleaning device for wafers according to an embodiment of the present invention comprises a closed chamber 1, and exhaust channels 10 with exhaust ports facing upward are provided on both sides of the closed chamber 1 for gas circulation when the wafers are cleaned with high-temperature liquid; a wafer placement table 2 is installed in the closed chamber 1, and a plurality of claws 20 are provided on the wafer placement table 2, and the claws 20 cooperate with each other to clamp and fix the wafer 7; a back high-temperature liquid nozzle 3 extends upward from the bottom of the wafer placement table 2 to the bottom of the back of the wafer 7 located on the claws 20, and the back high-temperature liquid nozzle 3 is used to spray and wash the back of the wafer 7 with liquid to keep it warm, and in addition, a plurality of movable front high-temperature liquid nozzles 6 are provided around the wafer placement table 2, and the front high-temperature liquid nozzle 6 can be used to clean the front of the wafer at high temperature; at least one cleaning nozzle 8 is arranged in the surface insulation component 4 and points to the wafer 7.

[0040] In this embodiment, in order to ensure that the temperature of the liquid is kept within a set range when the wafer is cleaned and etched with a high-temperature liquid, the temperature of the wafer is also in a high-temperature state, thereby ensuring the cleaning and etching efficiency of the wafer and the uniformity of the surface etching, a surface insulation member 4 and a back insulation member 5 are respectively arranged above and below the wafer. In this embodiment, the surface insulation member 4 can be raised and lowered above the wafer, and the surface insulation member 4 wraps the upper part of the wafer, so that the wafer is confined in a relatively sealed space during high-temperature cleaning. At the same time, an inlet 40 adapted to the front high-temperature liquid nozzle 6 is opened on the surface insulation member 4. Corresponding to the front high-temperature liquid nozzle 6, the front high-temperature liquid nozzle 6 can be moved to the inlet 40 and then the high-temperature liquid is sprayed onto the upper surface of the wafer. The front high-temperature liquid nozzle 6 needs to be pre-arranged in the standby position before moving to ensure that the liquid sprayed onto the wafer surface is at the required working temperature when it moves to the working area, thereby ensuring that the temperature of the upper part of the wafer is relatively stable, thereby improving the high-temperature liquid cleaning efficiency of the wafer and the uniformity of etching.

[0041] The back insulation part 5 is liftably arranged on the wafer placement table 2 and is located below the wafer 7. In this way, when cleaning and etching are performed, the back insulation part 5 moves upward to be close to the wafer, reducing the gap below the wafer, so that when the back high-temperature liquid nozzle 3 cleans and etches the back side of the wafer, the high-temperature chemical solution can more easily fill the space between the back insulation part 5 and the wafer 7, thereby achieving the purpose of ensuring more uniform temperature control on the wafer surface.

[0042] In this embodiment, the surface insulation part 4 and the back insulation part 5 cooperate with each other to ensure that the wafer is in a relatively closed space when the wafer is in high-temperature liquid. In this way, the high-temperature liquid on the wafer is within the set high temperature range, so that the high-temperature liquid can quickly and effectively perform processes such as uniform etching on the wafer, with good processing effect and simple overall structure, while meeting actual usage needs.

[0043] As a further preferred embodiment of the present application, in order to further ensure the temperature uniformity when the high-temperature liquid is sprayed onto the wafer, three front high-temperature liquid nozzles 6 are provided in the present embodiment. The three front high-temperature liquid nozzles 6 spray the three areas of the wafer relatively evenly during the spraying process, so that the high-temperature liquid can be quickly distributed on the wafer. Since three front high-temperature liquid nozzles 6 are used for spraying, the temperature of the high-temperature liquid on the wafer is ensured to remain uniform, thereby further improving the wafer cleaning and etching method.

[0044] As a further preferred embodiment of the present application, the temperature of the high-temperature liquid on the wafer is further distinguished and kept stable by improving the airflow mode in the sealed chamber 1, so a guide component is added, the guide component includes a movable sealing block 12, the movable sealing block 12 can be raised and lowered and arranged at the air outlet 11 above the exhaust channel 10, the upper guide hood 30 can be raised and lowered and arranged between the surface insulation part 4 and the carrier platform 2, and the upper guide hood 30 can surround the wafer 7 circumferentially, and when the upper guide hood abuts against the surface insulation part, the airflow is guided to the air outlet of the exhaust channel; the lower guide hood 31 can be raised and lowered and abutted below the upper guide hood, and the lower guide hood 31 can surround the wafer circumferentially; wherein, the guide mode of the guide component will be described in detail in the following cleaning method of the wafer cleaning equipment with high-temperature liquid.

[0045] See also Figure 2-6 The present invention also discloses a cleaning and etching method for a wafer cleaning device using a high-temperature chemical solution, comprising the following steps:

[0046] S1 The upper drainage cover and the lower drainage cover are located below the wafer. At this time, the airflow in the sealed chamber flows through the upper insulation and the upper drainage cover and then is discharged from the exhaust channel. The flow direction of the airflow can be kept smooth. At the same time, the three front high-temperature liquid nozzles start pre-spraying. Because the liquid is high-temperature liquid, the low-temperature liquid is sprayed in advance, so as to ensure that the liquid sprayed by the front high-temperature liquid nozzle is in a high-temperature state;

[0047] S2 The upper drainage cover rises to be located between the lower drainage cover and the surface insulation member, guiding the airflow to flow through between the upper drainage cover and the lower drainage cover and then be discharged from the exhaust channel. At the same time, the cleaning nozzle 8 wets the upper surface of the wafer. At this time, the upper drainage cover is used to surround the wafer in advance and is in a certain closed range;

[0048] S3 The upper drainage hood rises synchronously with the lower drainage hood to surround the wafer. At the same time, the moving sealing block moves up to open the air outlet, guiding the airflow from the top of the upper drainage hood to the exhaust port and finally discharged from the top of the air channel. The back insulation piece rises and approaches the wafer, and then the back high-temperature liquid nozzle starts to spray liquid treatment. At the same time, the high-temperature liquid fills the space between the back insulation piece and the wafer, and the surface temperature of the wafer is more uniform and stable.

[0049] S4: The three front high-temperature liquid nozzles are moved to the three inlets to clean and etch the upper surface of the wafer;

[0050] In this way, when the front and back sides of the wafer are cleaned with high-temperature liquid, the wafer is in a relatively closed airflow space formed by the upper drainage hood, the lower drainage hood and the surface insulation, ensuring that the high-temperature liquid is in a high-temperature state within a certain controllable range, thereby improving the cleaning efficiency and etching uniformity of the wafer.

[0051] The three front high-temperature liquid medicine nozzles of S5 and the rear insulation component return to their initial positions, and the upper and lower drainage covers return to their original positions, thereby discharging the airflow normally.

[0052] Through the above-mentioned cleaning method, the high-temperature liquid can be quickly and effectively sprayed uniformly onto the front and back sides of the wafer, and the temperature of the high-temperature liquid remains relatively stable on the wafer. The wafer has a good cleaning effect, improves the cleaning efficiency, and the etching uniformity, meeting the actual usage needs.

[0053] The above are only specific application examples of the present invention and do not constitute any limitation on the protection scope of the present invention. Any technical solution formed by equivalent transformation or equivalent replacement shall fall within the protection scope of the present invention.

Claims

1. A wafer cleaning and etching device using a high temperature chemical solution, characterized in that: include: A closed chamber, wherein both sides of the closed chamber are provided with exhaust passages with exhaust ports facing upwards; A wafer placement table is arranged in the closed chamber, and the wafer placement table is provided with claws for clamping the wafer; A back high-temperature chemical liquid nozzle extends upward from below the wafer placement table to below the back of the wafer on the claws, and is used to spray the back of the wafer with a high-temperature chemical liquid; A surface heat preservation member is arranged above the wafer and can be raised and lowered to keep the upper part of the wafer warm. The surface heat preservation member is provided with a plurality of inlets for the front high-temperature liquid nozzle to enter; A back heat preservation member is movably arranged on the wafer placement table and located below the wafer, and is used to keep the back of the wafer warm; At least one front high-temperature liquid medicine nozzle is movably arranged around the wafer placement table, and the front high-temperature liquid medicine nozzle is used to move to the entrance and spray the high-temperature liquid medicine onto the upper surface of the wafer; at least one cleaning nozzle, disposed in the surface heat preservation member and directed toward the wafer; It also includes a guide component for guiding the direction of airflow, and the guide component includes: a movable sealing block, which can be raised and lowered and arranged at the air outlet above the exhaust channel; an upper guide cover, which can be raised and lowered and arranged between the surface insulation component and the supporting platform, and the upper guide cover surrounds the wafer in a circumferential direction, wherein when the upper guide cover abuts against the surface insulation component, the airflow is guided to the air outlet of the exhaust channel; a lower guide cover, which can be raised and lowered and abuts against the bottom of the upper guide cover, and the lower guide cover surrounds the wafer in a circumferential direction.

2. The high temperature liquid cleaning and etching equipment for wafers as claimed in claim 1, characterized in that: There are three front high-temperature chemical liquid nozzles, and the three front high-temperature chemical liquid nozzles enter different areas of the wafer through multiple inlets.

3. The high temperature liquid cleaning and etching equipment for wafers as claimed in claim 1, characterized in that: The back heat-insulating member and the surface heat-insulating member are both heat-insulating plates with built-in heating components.

4. A cleaning and etching method for a wafer cleaning and etching device using a high temperature chemical solution as claimed in claim 1, characterized in that: The steps include: S1 upper and lower drainage covers are located below the wafer. The airflow flows through the upper insulation and upper drainage cover and is discharged from the exhaust channel. At the same time, the three front high-temperature liquid nozzles start pre-spraying liquid; S2 The upper drainage cover rises, guiding the airflow to flow between the upper drainage cover and the lower drainage cover and then be discharged from the exhaust channel, while the cleaning nozzle wets the upper surface of the wafer; S3: The upper hood rises and the lower hood rises synchronously, the moving block moves upward to open the air outlet, and the airflow is guided from the top of the upper hood to the exhaust port, and finally discharged from the top of the air channel. At this time, the upper hood and the lower hood surround the wafer, and the back insulation piece rises and approaches the wafer, and then the back high-temperature liquid nozzle starts to spray liquid for treatment; S4: The three front high-temperature liquid nozzles are moved to the three entrances to clean the upper surface of the wafer with liquid; The three front high-temperature liquid nozzles of S5 and the back insulation component return to their initial positions, and the upper and lower drainage covers return to their original positions, so that the airflow is discharged normally.

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